WO2014142304A1 - Procédé de traitement de surface d'un substrat de silicium, procédé de production d'un dispositif à semi-conducteur, dispositif de production de semi-conducteurs, élément de transfert et procédé de production de ce dernier ainsi que cellule solaire et procédé de production d'une cellule solaire - Google Patents
Procédé de traitement de surface d'un substrat de silicium, procédé de production d'un dispositif à semi-conducteur, dispositif de production de semi-conducteurs, élément de transfert et procédé de production de ce dernier ainsi que cellule solaire et procédé de production d'une cellule solaire Download PDFInfo
- Publication number
- WO2014142304A1 WO2014142304A1 PCT/JP2014/056888 JP2014056888W WO2014142304A1 WO 2014142304 A1 WO2014142304 A1 WO 2014142304A1 JP 2014056888 W JP2014056888 W JP 2014056888W WO 2014142304 A1 WO2014142304 A1 WO 2014142304A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- silicon substrate
- transfer member
- catalytic function
- silicon
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 130
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 128
- 239000010703 silicon Substances 0.000 title claims abstract description 128
- 238000012546 transfer Methods 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004381 surface treatment Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 87
- 239000002184 metal Substances 0.000 claims abstract description 87
- 239000002159 nanocrystal Substances 0.000 claims abstract description 68
- 230000003197 catalytic effect Effects 0.000 claims abstract description 50
- 230000001590 oxidative effect Effects 0.000 claims abstract description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 86
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 79
- 239000000243 solution Substances 0.000 claims description 54
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 35
- 229910052697 platinum Inorganic materials 0.000 claims description 34
- 239000004332 silver Substances 0.000 claims description 30
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 29
- 229910052709 silver Inorganic materials 0.000 claims description 29
- 239000000126 substance Substances 0.000 claims description 29
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229910045601 alloy Inorganic materials 0.000 claims description 19
- 239000000956 alloy Substances 0.000 claims description 19
- 238000012545 processing Methods 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 239000004745 nonwoven fabric Substances 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 229920002994 synthetic fiber Polymers 0.000 claims description 7
- 239000003054 catalyst Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- 238000013459 approach Methods 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 238000002310 reflectometry Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 24
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 239000011259 mixed solution Substances 0.000 description 12
- 239000002253 acid Substances 0.000 description 8
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 238000003917 TEM image Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- -1 silver ions Chemical class 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- UKCBKQLNTLMFAA-UHFFFAOYSA-N F.[F] Chemical compound F.[F] UKCBKQLNTLMFAA-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- HTYPUNPKBFMFFO-UHFFFAOYSA-N platinum silver Chemical compound [Ag][Pt][Pt] HTYPUNPKBFMFFO-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Definitions
- the present invention relates to a silicon substrate surface treatment method, a semiconductor device manufacturing method, a semiconductor manufacturing device, a transfer member and a manufacturing method thereof, and a solar cell, which are related to forming a fine nanocrystal structure layer on the surface of a silicon substrate. And a method for manufacturing a solar cell.
- the first metal is selected from the group of platinum (Pt), silver (Ag), palladium (Pd), gold (Au), rhodium (Rh) and alloys with other metals containing these.
- the second metal is selected from the group of Ni, Fe, Cu, and Pd in addition to silver (Ag).
- the transfer member made of the first metal is dipped in a solution prepared by dissolving the second metal and pulled up, and a small amount of trace is formed on the surface of the transfer member.
- a silicon substrate selected from single crystal silicon, polycrystalline silicon, amorphous silicon, pseudo single crystal silicon, and silicon compound semiconductor (including silicon carbide, silicon germanium, etc.) is selectively used as the silicon substrate. Can be used.
- a mixture of 100 ml of 50 wt% hydrogen fluoride (HF) water and 100 ml of 30 wt% hydrogen peroxide (H 2 O 2 ) aqueous solution was prepared in one container in a vinyl chloride container.
- a chemical solution in which silver (Ag) is dissolved (a solution having the same mixing ratio of hydrogen fluoride (HF) water and hydrogen peroxide (H 2 O 2 ) as in the above) is added to silver (Ag).
- a treatment liquid is prepared by injecting to a concentration of 1 ppm.
- a platinum foil having a thickness of about 20 ⁇ m is wound around a roller, and the platinum foil is brought into contact with the surface of the silicon substrate.
- the surface of the nanocrystal structure layer of the silicon substrate is treated in a 100 ml concentration of 70 wt% nitric acid (HNO 3 ) aqueous solution at room temperature for 10 minutes in a fluororesin container, and remains in the nanocrystal structure layer.
- HNO 3 nitric acid
- the obtained silver was dissolved, and further treated with hydrogen fluoride (HF) acid having a concentration of 5 wt% for 2 minutes, and then washed with water.
- HF hydrogen fluoride
- both single-crystal silicon substrates are temporarily laminated in oxygen at 600 ° C. for 30 minutes.
- oxygen 600 ° C. for 30 minutes.
- simultaneous diffusion treatment 970 ° C. for 15 minutes in (nitrogen (N 2 ), and the n + type region on the front side and the p side on the back side A + region was formed.
- N 2 nitrogen
- FIG. 17 is a current density (mA / cm 2 ) -voltage characteristic diagram obtained by light irradiation of AM1.5 of the pn junction solar cell obtained in this example.
- high performance was obtained with a photocurrent density of 40.3 mA / cm 2 , Voc of 589 mV, and conversion efficiency of 17.6%.
- the photocurrent density is 28.0 mA / cm 2
- Voc is 582 mV
- the conversion efficiency is 12.5.
- the photocurrent density is greatly increased as seen from the characteristics of the solid line, and the increase in conversion efficiency is also remarkable. It was clear that
- This characteristic is an example when the surface is not provided with an anti-reflective coating, the surface is not passivated, and the back surface field (BSF) is not formed and optimized. In the final product, it can be sufficiently expected that the conversion efficiency of the solar cell can be further increased.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
La présente invention se rapporte, dans un mode de réalisation, à un procédé de traitement de surface d'un substrat de silicium de telle sorte qu'un second métal qui comporte une minuscule fonction catalytique, soit supporté sur la surface d'un élément de transfert comprenant un premier métal qui comporte une fonction catalytique, et soit mis en contact avec le substrat de silicium ou soit mis à proximité de ce dernier dans une solution de traitement qui peut oxyder et dissoudre le silicium, ce qui permet de former une couche structurelle nanocristalline sur une section de surface du substrat de silicium. Il s'ensuit que la réflectivité d'une zone de lumière visible sur la surface du substrat de silicium est un peu réduite de pas plus de 2 à 3 % et qu'une cellule solaire qui présente une conversion photoélectrique élevée, peut être obtenue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015505598A JP6359519B2 (ja) | 2013-03-15 | 2014-03-14 | シリコン基板の表面処理方法、半導体装置の製造方法、半導体の製造装置、転写用部材およびその製造方法、太陽電池および太陽電池の製造方法 |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-052641 | 2013-03-15 | ||
| JP2013052641 | 2013-03-15 | ||
| JP2013150280 | 2013-07-19 | ||
| JP2013-150280 | 2013-07-19 | ||
| JP2013-188124 | 2013-09-11 | ||
| JP2013188124 | 2013-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2014142304A1 true WO2014142304A1 (fr) | 2014-09-18 |
Family
ID=51536952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2014/056888 WO2014142304A1 (fr) | 2013-03-15 | 2014-03-14 | Procédé de traitement de surface d'un substrat de silicium, procédé de production d'un dispositif à semi-conducteur, dispositif de production de semi-conducteurs, élément de transfert et procédé de production de ce dernier ainsi que cellule solaire et procédé de production d'une cellule solaire |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6359519B2 (fr) |
| TW (1) | TW201501193A (fr) |
| WO (1) | WO2014142304A1 (fr) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005183505A (ja) * | 2003-12-17 | 2005-07-07 | Kansai Tlo Kk | 多孔質層付きシリコン基板を製造する方法 |
| WO2011099594A1 (fr) * | 2010-02-15 | 2011-08-18 | Kobayashi Hikaru | Procédé et dispositif permettant de fabriquer des dispositifs à semi-conducteur, dispositif à semi-conducteur et élément de transfert |
| WO2013024746A1 (fr) * | 2011-08-12 | 2013-02-21 | Kobayashi Hikaru | Procédé de fabrication de dispositif à semi-conducteur, dispositif de fabrication de dispositif à semi-conducteur, dispositif à semi-conducteur, programme de fabrication de dispositif à semi-conducteur, agent de traitement pour semi-conducteur, et élément de transfert |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7776228B2 (en) * | 2006-04-11 | 2010-08-17 | Ebara Corporation | Catalyst-aided chemical processing method |
| US8193095B2 (en) * | 2010-05-28 | 2012-06-05 | National Taiwan University | Method for forming silicon trench |
| JP2013041864A (ja) * | 2011-08-11 | 2013-02-28 | Hikari Kobayashi | 太陽電池及び半導体装置の製造方法、並びに転写用型版 |
-
2014
- 2014-03-13 TW TW103108958A patent/TW201501193A/zh unknown
- 2014-03-14 JP JP2015505598A patent/JP6359519B2/ja not_active Expired - Fee Related
- 2014-03-14 WO PCT/JP2014/056888 patent/WO2014142304A1/fr active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005183505A (ja) * | 2003-12-17 | 2005-07-07 | Kansai Tlo Kk | 多孔質層付きシリコン基板を製造する方法 |
| WO2011099594A1 (fr) * | 2010-02-15 | 2011-08-18 | Kobayashi Hikaru | Procédé et dispositif permettant de fabriquer des dispositifs à semi-conducteur, dispositif à semi-conducteur et élément de transfert |
| WO2013024746A1 (fr) * | 2011-08-12 | 2013-02-21 | Kobayashi Hikaru | Procédé de fabrication de dispositif à semi-conducteur, dispositif de fabrication de dispositif à semi-conducteur, dispositif à semi-conducteur, programme de fabrication de dispositif à semi-conducteur, agent de traitement pour semi-conducteur, et élément de transfert |
Non-Patent Citations (2)
| Title |
|---|
| DAICHI IRISH IKA ET AL.: "Ultra-low Reflectivity Si Surfaces Fabricated by Surface Structure Chemical Transfer Method", <DAI 60 KAI> EXTENDED ABSTRACTS, JAPAN SOCIETY OF APPLIED PHYSICS AND RELATED SOCIETIES, vol. 30P-A4-5, 11 March 2013 (2013-03-11), pages 16 - 120 * |
| FRANCISCO FRANCO JR ET AL.: "Ultra-low reflectivity poly-crystalline Si surfaces fabricated by surface structure chemical transfer method", <DAI 60 KAI> EXTENDED ABSTRACTS, JAPAN SOCIETY OF APPLIED PHYSICS AND RELATED SOCIETIES, vol. 30P-A4-6, 11 March 2013 (2013-03-11), pages 16 - 121 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201501193A (zh) | 2015-01-01 |
| JPWO2014142304A1 (ja) | 2017-02-16 |
| JP6359519B2 (ja) | 2018-07-18 |
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