WO2014136213A1 - Appareil de source de lumière et procédé permettant de fabriquer ce dernier - Google Patents

Appareil de source de lumière et procédé permettant de fabriquer ce dernier Download PDF

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Publication number
WO2014136213A1
WO2014136213A1 PCT/JP2013/056064 JP2013056064W WO2014136213A1 WO 2014136213 A1 WO2014136213 A1 WO 2014136213A1 JP 2013056064 W JP2013056064 W JP 2013056064W WO 2014136213 A1 WO2014136213 A1 WO 2014136213A1
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Prior art keywords
resin layer
resin
layer
light source
source device
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PCT/JP2013/056064
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English (en)
Japanese (ja)
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石原　慎吾
俊一郎 信木
素子 原田
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株式会社 日立製作所
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Priority to PCT/JP2013/056064 priority Critical patent/WO2014136213A1/fr
Priority to JP2015504048A priority patent/JPWO2014136213A1/ja
Publication of WO2014136213A1 publication Critical patent/WO2014136213A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations

Definitions

  • the present invention relates to a light source device using an organic light emitting element and a method of manufacturing the same.
  • Patent Document 1 reports a method of manufacturing an organic light emitting device using a roll-to-roll method.
  • An object of the present invention is to provide a sealing process compatible with a roll-to-roll method, and a structure of an organic light emitting element and a light source device suitable for the sealing process.
  • a light source device comprises a substrate, a lower electrode provided on the substrate, an organic layer provided on the lower electrode, an upper electrode provided on the organic layer, and And a transparent resin layer provided on the upper electrode, wherein the transparent resin layer is composed of a first resin layer composed of a thermosetting resin and a second resin layer composed of a photocurable resin.
  • the first resin layer and the second resin layer are provided side by side in the surface direction.
  • the present invention provides a sealing process compatible with roll-to-roll method, and an element structure suitable for the sealing process. Therefore, provision of a low cost organic light emitting element and a light source device can be realized.
  • FIG. 1 is a cross-sectional view of an embodiment of a light source device according to the present invention.
  • FIG. 1 shows a bottom emission type light source device for extracting light from the substrate 101 side.
  • the lower electrode 102, the organic layer 103, the upper electrode 104, the first resin layer 106, the second resin layer 107, the third resin layer 110, and the sealing substrate 108 are sequentially disposed on the substrate 101.
  • a bank 109 is disposed.
  • a drive circuit, a housing, and the like not illustrated in FIG. 1 are provided as a light source device.
  • the organic light emitting element which is a component of the light source device has an upper electrode 104, a lower electrode 102 and an organic layer 103.
  • the substrate 101 on which the organic light emitting element is formed is referred to as an organic light emitting substrate 105.
  • the first resin layer 106, the second resin layer 107, and the third resin layer 110 are collectively referred to as a transparent resin layer.
  • the lower electrode 102 is an anode.
  • the lower electrode 102 may be used as a cathode.
  • the lower electrode 102 is formed by patterning a film formed by sputtering or vapor deposition by photolithography. In addition, it may be formed while being patterned by a coating method such as printing.
  • the upper electrode 104 When the lower electrode 102 is an anode, the upper electrode 104 is a cathode. When the lower electrode 102 is a cathode, the upper electrode 104 is an anode.
  • the upper electrode 104 is indium tin oxide (ITO) or indium zinc oxide (IZO), when ITO or IZO is formed by a sputtering method, the organic layer 103 and the upper electrode 104 are formed in order to reduce damage caused by sputtering.
  • a buffer layer may be provided between them.
  • an extremely thin film of a metal oxide such as molybdenum oxide or vanadium oxide or an MgAg alloy is used.
  • the bank 109 formed at the end of the organic light emitting element is formed on the lower electrode 102, and the organic layer 103 and the upper electrode 104 are formed in the inner part of the bank 109.
  • the bank 109 photosensitive polyimide is preferable.
  • acrylic resin, novolac resin, phenol resin, non-photosensitive organic material, or the like can be used.
  • the end portion of the organic light emitting element has a terminal portion outside the sealing described later. The terminal portion may be manufactured by drawing the lower electrode, or may be manufactured by drawing a lead wire electrically connected to the lower electrode.
  • the first resin layer 106 is formed on the upper electrode 104.
  • the first resin layer 106 is provided for the purpose of avoiding contact between the organic light emitting element and the sealing substrate 108. This has the effect of preventing the infiltration of gas and moisture that cause deterioration of the organic light emitting device.
  • various polymers such as epoxy resin can be used. These curing reactions include radical polymerization reaction, cation polymerization reaction, anion polymerization reaction, radical crosslinking reaction, acid catalyzed crosslinking reaction, addition reaction to SiH, siloxane condensation reaction, urethane formation reaction, allyl group oxygen oxidation reaction However, it is not limited to these.
  • polyethylene terephthalate polyvinylidene chloride, polystyrene, polysulfone, polymethyl methacrylate, acrylic resin, and thermoplastic resin may be used.
  • An inorganic passivation film can also be used between the first resin layer 106 and the upper electrode 104 in order to improve the sealing performance.
  • the second resin layer 107 is formed on the upper electrode 104.
  • the third resin layer 110 is formed on the bank 109.
  • the second resin layer 107 and the third resin layer 110 are used to hold the organic light emitting substrate 105 and the sealing substrate 108 in a bonded state in the curing step of the first resin layer 106. Further, similarly to the first resin layer 106, it is used to prevent entry of gas and moisture into the organic light emitting element.
  • various polymers such as epoxy resin or low melting point glass can be used as the second resin layer 107 and the third resin layer 110.
  • the curing reaction of the photocurable resin includes, but is not limited to, radical polymerization reaction, ene-thiol reaction, cationic polymerization reaction, anionic polymerization reaction, and photodimerization reaction.
  • a photopolymerization initiator is used in reactions such as radical polymerization, cationic polymerization and anionic polymerization.
  • a photopolymerization initiator benzophenone, benzophenone derivative, thioxanthone, thioxanthone derivative, benzoin derivative, benzyl dimethyl ketal, ⁇ -hydroxyalkylphenone, ⁇ -aminoalkylphenone, acyl phosphine oxide, alkoxyphenyl glyoxylate, diethoxyacetophenone
  • examples thereof include, but are not limited to, titanocene compounds, camphorquinone, triarylsulfonium salts, diaryliodonium salts, aryldiazonium salts, triarylsulfonium salts, maleiimide derivatives, thiolenes, and the like.
  • a small amount of photopolymerization initiator remains in the photocurable resin even after photocuring.
  • the sealing substrate 108 is formed on the first resin layer 106, the second resin layer 107, and the third resin layer 110.
  • a plastic substrate having a suitable gas barrier film can be used as the sealing substrate 108.
  • a glass substrate having a thickness of 0.3 mm or less or a glass substrate having a thickness of 0.3 mm or less may be used.
  • the organic light emitting element or the light source device efficiently extracts the light emitted inside the organic layer 103 having a refractive index of about 1.8 into the air layer having a refractive index of 1.0.
  • a light extraction layer is provided on the back surface of the substrate 101 or between the substrate 101 and the lower electrode 102.
  • a light extraction layer is provided between the upper electrode 104 and the first resin layer 106 or the second resin layer 107, or on the upper surface of the sealing substrate 108.
  • the light extraction layer for example, a structure such as a microlens, or a film having scattering property and diffuse reflection property is used.
  • the organic light emitting element used here may be a single element or an element divided into a plurality.
  • a method of connecting a plurality of elements a method in which each element is connected in series, in parallel or in combination is mentioned.
  • FIGS. 2 to 4 show cross-sectional views of an organic light emitting device according to an embodiment of the present invention.
  • the organic light-emitting element in which the substrate 101, the lower electrode 102, the organic layer 103, and the upper electrode 104 are arranged in this order from the lower side of FIG. 2 is a bottom emission type.
  • the lower electrode 102 is a transparent electrode to be an anode
  • the upper electrode 104 is a reflective electrode to be a cathode.
  • a top emission type element structure in which the lower electrode 102 is a reflective electrode and the upper electrode 104 is a transparent electrode may be used.
  • the substrate 101 and the lower electrode 102, the lower electrode 102 and the organic layer 103, the organic layer 103 and the upper electrode 104 may be in contact with each other, and an inorganic buffer layer or an injection layer may be interposed between the layers.
  • the inorganic buffer layer include vanadium oxide, molybdenum oxide and tungsten oxide.
  • the injection layer may, for example, be an electron injection layer or a hole injection layer.
  • the organic layer 103 As the organic layer 103, the charge transport layer 201, the first light emitting layer 202, and the charge transport layer 203 are formed in this order from the lower electrode 102 side.
  • the organic layer 103 As the organic layer 103, the charge transport layer 201, the second light emitting layer 204, the third light emitting layer 205, and the charge transport layer 203 are formed in this order from the lower electrode 102 side.
  • the organic layer 103 As the organic layer 103, the charge transport layer 201, the fourth light emitting layer 206, the fifth light emitting layer 207, the sixth light emitting layer 208, and the charge transport layer 203 are formed in this order from the lower electrode 102 side. ing.
  • An electron transport layer, a hole transport layer, etc. are considered as a charge transport layer.
  • the charge transport layer 203 disposed closer to the cathode is an electron transport layer
  • the charge transport layer 201 disposed closer to the anode is a hole transport layer.
  • the first light emitting layer 202 shown in FIG. 2 contains a host, a first dopant, a second dopant, and a third dopant.
  • White light emission is obtained by mixing the light emitted from each dopant. Blue, green and red are mentioned as an example of the luminescent color of each dopant.
  • the second light emitting layer 204 shown in FIG. 3 contains a host, a first dopant, and a second dopant
  • the third light emitting layer 205 contains a host and a third dopant.
  • the combination of the second light emitting layer 204 and the third light emitting layer 205 may be the reverse of the above combination.
  • the method of manufacturing the organic light emitting device is roughly classified into a vacuum evaporation method and a coating method.
  • the vacuum deposition method it is easy to stack each layer.
  • each layer is formed in a vacuum atmosphere with few impurities, high performance characteristics can be obtained.
  • the throughput is low due to limitations such as the deposition rate, and cost reduction is an issue.
  • the coating method has advantages such as easy formation of a large area, high utilization efficiency of the material, and high throughput.
  • the coating method in order to form a laminated film, it is necessary to use a solvent in which the material to be laminated is dissolved and the underlying layer is not dissolved. Therefore, it is necessary to reduce the number of layers of the organic light emitting element, and it is required to make the light emitting layer into a single layer or two layers.
  • FIG. 10 is a top view of the light source device of FIG. FIG. 1 shows a cross section in the AB direction of FIG. 10, and in the plane direction, the third resin layer 110, the first resin layer 106, the second resin layer 107, and the first resin. It shows that the layer 106 and the third resin layer 110 are provided in order. Since the respective resin layers extend in the depth direction, it can be seen that they are arranged in the same order in the overhead view of FIG. Assuming that the cross section in FIG. 1 is a first cross section (direction AB), resin layers are continuously provided in the cross section orthogonal to the first cross section. For example, in a second cross section (CD direction) orthogonal to the first cross section, the second resin layer 107 is continuously provided. The first resin layer 106 is continuously provided in a third cross section (EF direction) orthogonal to the first cross section.
  • EF direction third cross section
  • the light source device of the present invention adheres and advances upper and lower films (organic light emitting substrate film and sealing substrate film) while conveying in the left and right direction, and the third resin layer 110 and the second resin layer 107 After temporary curing in the light curing step, the first resin layer 106 is subjected to main curing in the heat curing step to be manufactured.
  • the first resin layer 106 is subjected to main curing in the heat curing step to be manufactured.
  • two regions where the first resin layer 106 is formed are shown, but three or more regions may be provided. In that case, as in FIG. 10, the second resin layer 107 is disposed between the first resin layers 106.
  • the distance from the center in the AB direction of the coating width of the third resin layer 110 on both sides of the first resin layer 110 to the center of the coating width of the second resin layer 107 is taken as the length L0 of the basic unit.
  • the coating width of the second resin layer 107 is from the center of the coating width of the second resin layer 107 in the AB direction except for the first resin layers 106 at both ends. Let the distance to the center be the length L0 of the basic unit.
  • FIG. 11 is another example of FIG. FIG. 11 is a view of the light source device of FIG. 1 as viewed from above as in FIG. 10.
  • the cross-sectional view of FIG. 1 shows the third resin layer 110, the first resin layer 106, the second resin layer 107, the first resin layer 106, and the third resin layer 110 in the plane direction. Indicates that in order.
  • the cross section in FIG. 1 is a first cross section (GH direction)
  • a third resin layer 110 and a second resin layer are formed in a second cross section (IJ direction) parallel to the first cross section.
  • 107 and the third resin layer 110 are provided in order.
  • the second resin layer 107 is continuously provided on a second cross section (KL direction) orthogonal to the first cross section.
  • the second resin layer 107, the first resin layer 106, and the second resin layer 107 are continuously provided.
  • the first resin layer 106 is formed so as to be surrounded by the second resin layer 107 and the third resin layer 110.
  • Such an arrangement can prevent water from intruding into the first resin layer 106 from the end of the light source device.
  • the distance from the center in the AB direction of the coating width of the third resin layer 110 on both sides of the first resin layer 110 to the center of the coating width of the second resin layer 107 is taken as the length L0 of the basic unit.
  • the coating width of the second resin layer 107 is from the center of the coating width of the second resin layer 107 in the AB direction except for the first resin layers 106 at both ends. Let the distance to the center be the length L0 of the basic unit.
  • FIG. 5 is a schematic view showing an example of a manufacturing process of a light source device using an organic light emitting element.
  • the process includes at least an organic thin film forming process 2 constituting an organic light emitting device, an upper electrode forming process 3 of an organic light emitting device, a sealing substrate bonding process 4 and a substrate cutting process 5.
  • the organic thin film forming step 2 will be described with reference to FIG.
  • the substrate film described above is conveyed from the substrate supply unit 601, and the substrate film is collected by the substrate winding unit 604 via the cleaning / surface modification processing unit 602 for cleaning and surface modification of the substrate film, the coating / drying unit 603, and the like. Be done.
  • the substrate film on which the gas barrier film and the lower electrode are formed is supplied as a roll-shaped substrate film wound around a core.
  • the cleaning / surface modification processing unit 602 cleans and reforms the lower electrode surface of the substrate film sent from the substrate supply unit 601 before applying the coating liquid for forming an organic thin film, and It has electronic processing means.
  • the cleaning surface modification means may be pure water, ultrasonic cleaning with an organic solvent, UV / O 3 treatment, or atmospheric pressure plasma treatment, but it is not limited to these, and the methods listed may be combined.
  • the coating / drying unit 603 includes a backup roll for holding a substrate film, a wet coater for coating a coating liquid for forming an organic thin film on the substrate film held by the backup roll, a solvent for the organic thin film formed on the substrate film It has a drying device to be removed and a charge processing means.
  • the said organic thin film is formed in the whole board
  • the organic film removing step may be performed after all the organic thin film layers of the organic light emitting element are formed.
  • the wet coater, the drying apparatus, the charging process and the like are arranged to be equal to the total number of the plurality of organic layers 103 forming the organic light emitting device shown in FIG. 2 or 3. It is desirable that the substrate film on which all the organic layers are formed be wound up and collected by the substrate winding unit 604.
  • the upper electrode forming step 3 includes a first upper electrode forming portion 702, a second upper electrode forming portion 703, and a substrate winding portion 708.
  • the upper electrode forming step 3 is generally performed in a vacuum atmosphere. In that case, the process from the substrate supply unit 701 to the substrate winding unit 708 is continuously performed in a vacuum atmosphere.
  • the substrate supply unit 701 is in the air atmosphere, and is gradually evacuated to the first upper electrode formation unit 702 until the first upper electrode formation unit 702 and the second upper electrode formation unit.
  • 703 is a vacuum atmosphere.
  • a roll-shaped substrate film wound up with a core and supplied in the organic thin film forming step 2 is supplied.
  • the LiF ultrathin film is formed on the plurality of organic thin film layers stacked on the substrate film unrolled from the substrate supply unit 701 as a carrier injection layer in the first upper electrode forming unit 702.
  • LiF is deposited on the substrate film from the evaporation source container 705.
  • an Al film is formed on the carrier injection layer as an upper electrode.
  • the material of the Al film is deposited on the substrate film from the evaporation source container 707.
  • the upper electrode may be formed in one of the first upper electrode forming portion 702 and the second upper electrode forming portion 703.
  • the substrate film on which the upper electrode is formed is wound around a winding core at a substrate winding unit 708 to form a roll-shaped substrate film.
  • the atmosphere of the bonding portion 805 is reduced pressure, the substrate and the sealing substrate are bonded, and after bonding, the atmosphere is returned to the atmospheric pressure. In that case, air bubbles mixed in the first resin layer 106, the second resin layer 107, and the third resin layer 110 are reduced.
  • all portions including the bonding portion 805 may be in a vacuum atmosphere.
  • the 1st resin application part 803 and the 2nd resin application part 804 are made into pressure reduction atmosphere, or bubbles in resin are defoamed, or both application parts and bonding parts
  • a vacuum degassing unit may be provided between 805.
  • the first resin layer 106 is applied to the region shown in FIG. 10 or 11 on the substrate film on which the organic light emitting element is formed.
  • the same area is divided into an area (CD direction (FIG. 10), KL direction (FIG. 11)) perpendicular to the substrate transfer direction and an area (IJ direction (FIG. 11)) parallel to the substrate transfer direction.
  • the application of the vertical area is preferably performed by intermittently applying the first resin layer 106 from a coating machine in which the longitudinal direction of the light emission port is perpendicular to the transport direction.
  • the coater examples include a slot die coater, a gravure coater, a reverse roll coater, a kiss coater, a roll knife coater, a rod coater and a lip coater, but not limited thereto.
  • other coating machines include, but are not limited to, a dispenser in which a plurality of heads are arranged, screen printing, and the like.
  • a method of applying the first resin layer 106 from a dispenser is desirable for forming parallel regions. In the application region of the first resin layer 106 shown in FIG. 11, the arrangement of the application machine in which the application region formed in parallel with the application region formed in the vertical region described above does not overlap is desirable.
  • the first resin layer 106 is formed on the substrate, it may be formed on a sealing substrate. In the application region of the first resin layer 106 shown in FIG. 11, the vertical region and the parallel region may be applied to the substrate, the sealing substrate, or the opposite.
  • thermosetting resin and photocuring resin by a slot-die system
  • coat both thermosetting resin and photocuring resin by a slot-die system
  • to set it as a simple structure it is also possible to apply a thermosetting resin by a slot die method, and apply a photocurable resin by a dispenser method to make the structure conform to the length and width of each region.
  • the second resin layer 107 is applied on the area shown in FIG. 10 or 11 on the sealing substrate. It is preferable to apply the second resin layer 107 intermittently from a coating machine in which the longitudinal direction of the light emission port is perpendicular to the transport direction. Alternatively, the sealing substrate in the application portion may be intermittently stopped, and the second resin layer 107 may be applied by screen printing. Further, the second resin layer 107 may be formed on a substrate.
  • the third resin layer 110 at the end of the organic light emitting element shown in FIG. 10 or FIG. 11 is manufactured by the same method as the second resin. Therefore, the second resin coating unit 804 may be used for manufacturing, or a third resin coating unit may be separately provided.
  • the substrate and the sealing substrate are bonded to each other, and the integrated substrate is held by a pressing pressure of a roller or the like.
  • the atmosphere of the bonding portion 805 may be atmospheric pressure or vacuum.
  • the second resin layer 107 is photocured using the second resin curing processing unit 806.
  • the light source of the curing unit include a high pressure mercury lamp, an ultrahigh pressure mercury lamp, a metal halide lamp, a high power metal halide lamp, and a pulsed luminescence xenon lamp, but the invention is not limited thereto.
  • Other curing sources also include electron beams, laser beams, and heating. Also, the light source and the other curing source may be combined.
  • the bonding unit 805 is provided with a mechanism for adjusting the pressure, bonding is performed under a vacuum, and thereafter, the atmosphere is set to an atmospheric pressure atmosphere. Therefore, it is desirable that the curing process of the second resin layer 107 be performed under an atmospheric pressure atmosphere.
  • the third resin layer 110 is cured.
  • the bonded substrate and the sealing substrate are integrated and conveyed to the first resin curing processing unit 807.
  • the first resin layer 106 is thermally cured.
  • the transport direction of the substrate integrated by the plurality of transport rollers is reversed by 180 ° and transported. Placement is desirable.
  • the heater 808 used for heat curing of the first resin layer 106 is preferably arranged such that the substrate to be transported is heated from both sides of the substrate and the sealing substrate. Also, either one side may be arranged.
  • the conveyance of the region where the integrated substrate is in contact with the same roller is performed to make it difficult for the two substrates to peel off during conveyance. It is desirable that the length L1 (FIG. 12) of the side parallel to the direction be equal to or shorter than the length L0 (FIG. 10, FIG. 11) of the basic unit.
  • the length L1 of the side parallel to the transport direction of the region where the integrated substrate is in contact with the same roller corresponds to the curvature R of the transport roller, and the third resin on both sides of the first resin layer 110
  • the distance from the center of the coating width of the layer 110 in the AB direction to the center of the coating width of the second resin layer 107 is the length L0 of the basic unit (the coating interval of the light curing resin) Satisfy the relationship of expression.
  • a substrate supply unit 901 an alignment mark detection unit 902 for detecting an alignment mark disposed on a substrate film, and a cutting device 903 for cutting in accordance with the position of the organic light emitting device formed on the substrate film .
  • Examples of the main skeleton of the blue dopant include perylene and iridium complexes (Bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridinyl) iridium (III)): FIrpic and the like).
  • perylene and iridium complexes Bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridinyl) iridium (III): FIrpic and the like.
  • an iridium complex represented by the following formula (1) is more preferable in terms of light emission characteristics.
  • X1 represents an aromatic heterocycle containing N
  • X2 represents an aromatic hydrocarbon ring or an aromatic heterocycle.
  • Examples of the aromatic heterocycle represented by X 1 include quinoline ring, isoquinoline ring, pyridine ring, quinoxaline ring, thiazole ring, pyrimidine ring, benzothiazole ring, oxazole ring, benzoxazole ring, indole ring, isoindole ring and the like.
  • Examples of the aromatic hydrocarbon ring or aromatic heterocycle represented by X 2 include benzene ring, naphthalene ring, anthracene ring, thiophene ring, benzothiophene ring, furan ring, benzofuran ring, fluorene ring and the like.
  • X 3 includes acetylacetonate derivatives, picolinate derivatives, tetrakis pyrazolyl borate derivatives and the like. Also, X3 may be the same as X1-X2.
  • the concentration of the blue dopant is preferably 10 wt% or more with respect to the host.
  • the weight average molecular weight of the blue dopant is preferably 500 or more and 3,000 or less.
  • Green dopant> The green dopant has a maximum intensity of PL spectrum at room temperature between 500 nm and 590 nm.
  • the main skeleton of the green dopant include coumarin and derivatives thereof, and iridium complexes (Tris (2-phenylpyridine) iridium (III): hereinafter Ir (ppy) 3, etc.).
  • the iridium complex represented by the formula (1) is more preferable in terms of light emission characteristics.
  • X1 represents an aromatic heterocycle containing N
  • X2 represents an aromatic hydrocarbon ring or an aromatic heterocycle.
  • Examples of the aromatic heterocycle represented by X 1 include quinoline ring, isoquinoline ring, pyridine ring, quinoxaline ring, thiazole ring, pyrimidine ring, benzothiazole ring, oxazole ring, benzoxazole ring, indole ring, isoindole ring and the like.
  • Examples of the aromatic hydrocarbon ring or aromatic heterocycle represented by X 2 include benzene ring, naphthalene ring, anthracene ring, thiophene ring, benzothiophene ring, furan ring, benzofuran ring, fluorene ring and the like.
  • Examples of X3 include acetylacetonate derivatives and the same as X1-X2.
  • the concentration of the green dopant in the organic layer 3 is preferably 1 wt% or less based on the host.
  • the weight average molecular weight of the green dopant is preferably 500 or more and 3,000 or less.
  • the red dopant has a maximum intensity of PL spectrum at room temperature between 590 nm and 780 nm.
  • red dopants examples include rubrene, (E) -2- (2- (4- (dimethylamino) styryl) -6-methyl-4H-pyran-4-ylidene) malononitrile (DCM) and derivatives thereof, iridium Complexes (Bis (1-phenylisoquinoline) (acetylacetonate) iridium (III) and the like), osmium complexes, europium complexes, etc. may be mentioned.
  • the iridium complex represented by the formula (1) is more preferable in terms of light emission characteristics.
  • X1 represents an aromatic heterocycle containing N
  • X2 represents an aromatic hydrocarbon ring or an aromatic heterocycle.
  • Examples of the aromatic heterocycle represented by X 1 include quinoline ring, isoquinoline ring, pyridine ring, quinoxaline ring, thiazole ring, pyrimidine ring, benzothiazole ring, oxazole ring, benzoxazole ring, indole ring, isoindole ring and the like.
  • Examples of the aromatic hydrocarbon ring or aromatic heterocycle represented by X 2 include benzene ring, naphthalene ring, anthracene ring, thiophene ring, benzothiophene ring, furan ring, benzofuran ring, fluorene ring and the like.
  • X3 is preferably an acetylacetonate derivative or the like.
  • the concentration of the red dopant is preferably 1 wt% or less with respect to the host.
  • the weight average molecular weight of the red dopant is preferably 500 or more and 3,000 or less.
  • the hole injection layer is used for the purpose of improving the luminous efficiency and the lifetime. Further, although not particularly essential, it is used for the purpose of alleviating the irregularities of the anode.
  • the hole injection layer may be provided as a single layer or a plurality of layers.
  • the hole injection layer a conductive polymer such as PEDOT (poly (3,4-ethylenedioxythiophene)): PSS (polystyrene sulfonate) is preferable. Besides, polypyrrole-based and triphenylamine-based polymer materials can be used. Further, phthalocyanine compounds and starburst amine compounds which are often used in combination with a low molecular weight (weight average molecular weight of 10000 or less) material system are also applicable.
  • the hole transport layer is a layer that supplies holes to the light emitting layer. In a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer.
  • the hole transport layer may be provided as a single layer or a plurality of layers.
  • a starburst amine compound, a stilbene derivative, a hydrazone derivative, a thiophene derivative, a fluorene derivative or the like can be used. Further, the present invention is not limited to these materials, and two or more of these materials may be used in combination.
  • An electron accepting material may be added to the hole transport layer in order to lower the resistance of the hole transport layer and lower the driving voltage.
  • An electron transport layer is a layer which supplies an electron to a light emitting layer. In a broad sense, the electron injection layer and the hole blocking layer are also included in the electron transport layer.
  • the electron transporting layer may be provided in a single layer or a plurality of layers.
  • Examples of the material of the electron transport layer include bis (2-methyl-8-quinolinolato) -4- (phenylphenolato) aluminum (BAlq), tris (8-quinolinolato) aluminum (Alq3), and Tris (2, 4, 6-trimethyl-3- (pyridin-3-yl) phenyl) borane (3TPYMB), 1,4-bis (triphenylsilyl) benzene (UGH 2), oxadiazole derivative, triazole derivative, fullerene derivative, phenanthroline derivative, quinoline Derivatives, silole derivatives and the like can be used.
  • An electron donating material may be added to the electron transport layer to lower the resistance of the electron transport layer and lower the drive voltage of the device.
  • the electron injection layer improves the electron injection efficiency from the cathode to the electron transport layer. Specifically, lithium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, magnesium oxide and aluminum oxide are desirable. Moreover, of course, it is not necessarily limited to these materials, and two or more of these materials may be used in combination.
  • the substrate 101 include a glass substrate, a metal substrate, and a plastic substrate on which an inorganic material such as SiO 2 , SiN x , Al 2 O 3 or the like is formed.
  • metal substrate materials include alloys such as stainless steel and 42 alloy.
  • plastic substrate material include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polymethyl methacrylate, polysulfone, polyether sulfone, polycarbonate, polyimide and the like.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • polymethyl methacrylate polysulfone
  • polyether sulfone polycarbonate
  • polyimide polyimide and the like.
  • the anode material any material having a high work function can be used.
  • the material that can be used as the transparent electrode include conductive oxides such as ITO and IZO, and metals having a high work function such as thin Ag.
  • the reflective electrode one obtained by laminating ITO on Al, an ITO / Ag / ITO laminated film, Cr, Mo and the like can be mentioned.
  • the electrode pattern formation may be performed by using photolithography or the like on the substrate such as glass generally in the case of the lower electrode, and by using a metal mask in the film formation in the case of the upper electrode. it can.
  • the cathode material is preferably a metal having a low work function.
  • a laminated body of LiF and Al, a Mg: Ag alloy, etc. are suitably used as a material to be used as a reflective electrode.
  • a thin Mg: Ag alloy, a thin Mg: Ag alloy laminated on ITO, a laminate of LiF and IZO, etc. may be mentioned.
  • a Cs compound, a Ba compound, a Ca compound etc. can be used instead of LiF.
  • the patterning of the electrodes can be performed in the same manner as the anode.
  • Examples of the coating method for forming the organic layer 103 include spin coating, casting, dip coating, spray coating, screen printing, and inkjet printing.
  • the organic layer 103 is formed using one of these methods.
  • Example 1 of the present invention a white light emitting device having a structure shown in FIG. 2 was produced.
  • a PEN film was used for the substrate 101.
  • a SiN x film as a passivation film was formed on one side, and an ITO electrode as a lower electrode 102 was formed on the other side.
  • the pixel end of the ITO electrode is covered with a photosensitive polyimide film (including the direction perpendicular to the paper surface).
  • a polymer organic film having a thickness of 60 nm was formed as the hole transport layer (charge transport layer) 201.
  • the first light emitting layer 202 was formed.
  • Formula (2) was used as the host of the first light emitting layer, Formula (3) for the blue dopant, Formula (4) for the green dopant, and Formula (5) for the red dopant.
  • the weight ratio of each material was 100: 10: 1: 1.
  • the host, blue dopant material, green dopant material and red dopant material were dissolved in toluene to prepare a coating solution.
  • the solid component concentration of the coating solution is 1 wt. Set to%.
  • the first light emitting layer 202 with a film thickness of 40 nm was formed using a slot cord die.
  • Formula (6) was used as the electron transport layer (charge transport layer) 203.
  • the electron transport layer was formed by vapor deposition to form a 40 nm thick film. Subsequently, a stacked body of LiF with a film thickness of 0.5 nm and Al with a film thickness of 150 nm was formed as the upper electrode 104 to fabricate an organic light emitting device.
  • a photocurable epoxy resin with a film thickness of 20 ⁇ m As the second resin layer 107 and the third resin layer 110 in the region shown in FIG. 10 on the PEN film on which the organic light emitting element is formed, a photocurable epoxy resin with a film thickness of 20 ⁇ m, and a first resin It formed using the application part (slot die coater) 803.
  • FIG. 8 For the sealing substrate 108, a PEN film having a SiN x film formed on one side as a passivation film was used.
  • a thermosetting epoxy resin having a film thickness of 20 ⁇ m was formed as a first resin layer 106 on the opposite side, using a second resin application portion (slot die coater) 804.
  • the bonding portion 805 the substrate 101 and the sealing substrate 108 were bonded in an atmospheric pressure atmosphere.
  • the third resin layer 110 and the second resin layer 107 were photocured.
  • the first resin layer 106 on the A direction side and the third resin layer 110 on the A direction side were pressure bonded, and the third resin layer 110 was photocured in the second resin curing processing unit 806.
  • the two first resin layers 106 and the second resin layer 107 and the two third resin layers 110 may be pressure-bonded and light-cured.
  • the substrate in which the second resin layer 107 and the third resin layer 110 are photocured to integrate the substrate 101 and the sealing substrate 108 is sent to the first resin curing processing unit 807, 80 ° C., 10 It was made to heat-harden on the conditions for 1 minute, and it cut by the cutting apparatus 903 and completed the white light-emitting device.
  • the substrate and the sealing substrate were bonded by the roll-to-roll method.
  • the substrate In the roll-to-roll method, the substrate is transported at high speed.
  • the first resin layer 106 By photocuring the second resin layer 107 and the third resin layer 110, the first resin layer 106 could be thermally cured by the roll-to-roll method.
  • Example 2 of this invention the white light emitting element of another structure shown in FIG. 2 was produced.
  • the substrate 101, the lower electrode 102, and the hole transport layer (charge transport layer) 201 were produced under the same conditions as in Example 1.
  • the first light emitting layer 202 uses the above-mentioned formula (2) as a host, the above-mentioned formula (4) as a green dopant, and the formula (7) as a red dopant.
  • the weight ratio of each material was 100: 10: 1.
  • the host, the green dopant material and the red dopant material were dissolved in toluene to prepare a coating solution.
  • the solid component concentration of the coating solution is 1 wt. Set to%.
  • a light emitting layer with a film thickness of 40 nm was formed by a slot die coater.
  • the transport layer 203 is made of a host of formula (8), a blue dopant of formula (9), and an electron transporting material of formula (10).
  • the weight ratio of each material was 100: 10: 100.
  • These hosts, a blue dopant material, and an electron transport material were dissolved in 2-propanol to prepare a coating solution.
  • the solid component concentration of the coating solution is 1 wt. Set to%.
  • a charge transport layer with a film thickness of 40 nm was formed by a slot die coater. Since the electron transport material rises upward, the charge transport layer 203 has a pseudo laminated structure of the blue light emitting layer and the electron transport layer from the lower side. Subsequently, the upper electrode 104 was formed under the same conditions as in Example 1 to fabricate an organic light emitting device.
  • the second resin layer 107 and the third resin layer 110 were formed on the substrate on which the organic light emitting device was formed under the same conditions as in Example 1. Further, the first resin layer 106 was formed on the sealing substrate 108 under the same conditions as in Example 1. Next, in the bonding portion 805, the substrate 101 and the sealing substrate 108 were bonded. First, the degree of vacuum in the bonding portion 805 was reduced to 200 Pa. Next, the substrate 101 and the sealing substrate 108 were pressure-bonded and returned to the atmospheric pressure atmosphere with the pressure-bonding maintained. After that, the second resin layer 107 and the third resin layer 110 were photocured by the second resin curing unit 806. Next, the substrate in which the substrate 101 and the sealing substrate 108 are integrated is sent to the first resin curing processing unit 807, and the first resin is thermally cured and cut under the same conditions as in Example 1; Completed.
  • the substrate 101 and the sealing substrate 108 were attached by a roll-to-roll method.
  • the first resin layer 106 could be thermally cured by the roll-to-roll method.
  • bonding in a vacuum atmosphere a sealed state in which no bubbles are present in the first, second and third resins was achieved.
  • Example 3 of the present invention a white light emitting element having a structure shown in FIG. 3 was produced.
  • the substrate 101, the lower electrode 102, and the hole transport layer (charge transport layer) 201 were produced under the same conditions as in Example 1.
  • the second light emitting layer 204 uses the above-mentioned formula (2) as the host, the above-mentioned formula (4) as the green dopant, and the formula (7) as the red dopant.
  • the preparation conditions are the same as the first light emitting layer 202 of Example 2.
  • the host is the formula (8) described above, and the blue dopant is the formula (3).
  • the weight ratio of each material was 100: 10. These hosts and blue dopant materials were dissolved in 2-propanol to prepare a coating solution. The solid component concentration of the coating solution is 1 wt. Set to%. Using this coating solution, a light emitting layer with a film thickness of 40 nm was formed by a slot die coater. Subsequently, the upper electrode 104 was formed under the same conditions as in Example 1 to fabricate an organic light emitting device.
  • the bonding step was performed in a vacuum atmosphere (200 Pa).
  • a vacuum atmosphere 200 Pa
  • the second resin layer 107 and the third resin layer 110 shown in FIG. 11 on the substrate on which the organic light emitting element is formed, in a region parallel to the LK direction and equal to the width of the first resin in the LK direction.
  • a photocurable epoxy resin with a film thickness of 20 ⁇ m was applied and formed by a slot die coater.
  • a photocurable resin with a film thickness of 20 ⁇ m was applied to two regions parallel to the IJ direction using a dispenser.
  • the first resin layer 106 was formed on the sealing substrate 108 under the same conditions as in Example 1.
  • the substrate 101 and the sealing substrate 108 were bonded by pressure bonding.
  • the second resin layer 107 and the third resin layer 110 were photocured by the second resin curing unit 806.
  • the substrate in which the substrate 101 and the sealing substrate 108 are integrated is sent to the first resin curing processing unit 807, and the first resin layer is thermally cured and cut under the same conditions as in Example 1 to emit white light. I completed the device.
  • the substrate and the sealing substrate were bonded by the roll-to-roll method.
  • the first resin could be thermally cured by the roll-to-roll method.
  • bonding in a vacuum atmosphere a sealed state in which no bubbles are present in the first, second and third resins was achieved.
  • Example 4 of the present invention a white light emitting element having a structure shown in FIG. 4 was produced.
  • the substrate 101, the lower electrode 102, and the hole transport layer (charge transport layer) 201 were produced under the same conditions as in Example 1.
  • a fourth light emitting layer 206 with a thickness of 20 nm was formed thereon.
  • the above formula (2) was used as the host, and the above formula (4) was used for the green dopant.
  • the preparation conditions used resistance heating vapor deposition under vacuum.
  • a fifth light emitting layer 207 with a thickness of 20 nm was formed thereon.
  • the host used the above-mentioned formula (2), and the red dopant used the above-mentioned formula (7).
  • the formation method is vacuum resistance heating vapor deposition.
  • a sixth light emitting layer 208 with a thickness of 20 nm was formed thereon.
  • the host used the above-mentioned formula (8), and the blue dopant used the above-mentioned formula (3).
  • the formation method is vacuum resistance heating vapor deposition. Subsequently, an electron transport layer 203 and an upper electrode 104 were formed under the same conditions as in Example 1 to fabricate an organic light emitting device.
  • the substrate 101 on which the organic light emitting element was manufactured and the sealing substrate 104 were bonded.
  • the formation of the first resin layer 106, the second resin layer 107, and the third resin layer 110 on the substrate 101 and the sealing substrate 104 is performed under the same conditions as in Example 3, and bonding and cutting are performed in Example 2 Under the same conditions, a white light emitting device was completed.
  • the substrate and the sealing substrate were attached by a roll-to-roll method.
  • the first resin layer 106 could be thermally cured by the roll-to-roll method.
  • bonding in a vacuum atmosphere a sealed state in which no bubbles are present in the first, second and third resins was achieved.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention a pour objet de fournir une étape de scellage qui peut être appliquée à un procédé de rouleau à rouleau, et des structures d'un élément électroluminescent organique et d'un appareil de source de lumière qui conviennent pour l'étape de scellage. Cet appareil de source de lumière comprend : un substrat; une électrode inférieure qui est agencée sur le substrat; une couche organique qui est agencée sur l'électrode inférieure; une électrode supérieure qui est agencée sur la couche organique; et une couche de résine transparente qui est agencée sur l'électrode supérieure. La couche de résine transparente comprend une première couche de résine qui est composée d'une résine thermodurcissable, et une seconde couche de résine qui est composée d'une résine photodurcissable, la première couche de résine et la seconde couche de résine étant disposées en étant alignées l'une avec l'autre dans la direction superficielle.
PCT/JP2013/056064 2013-03-06 2013-03-06 Appareil de source de lumière et procédé permettant de fabriquer ce dernier WO2014136213A1 (fr)

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JP2015504048A JPWO2014136213A1 (ja) 2013-03-06 2013-03-06 光源装置およびその製造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018198973A1 (fr) * 2017-04-27 2018-11-01 住友化学株式会社 Composition et élément électroluminescent faisant appel à ladite composition

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003203762A (ja) * 2001-11-01 2003-07-18 Sony Corp 表示装置
JP2006261123A (ja) * 2006-03-17 2006-09-28 Semiconductor Energy Lab Co Ltd カーオーディオ、表示装置、音響再生装置、及び携帯情報端末
WO2008066122A1 (fr) * 2006-11-30 2008-06-05 Kyocera Corporation Dispositif el organique et procédé de fabrication correspondant
JP2011108566A (ja) * 2009-11-20 2011-06-02 Konica Minolta Holdings Inc 有機ｅｌパネル
JP2011520216A (ja) * 2008-04-09 2011-07-14 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ 酸素及び／又は水分に敏感な電子デバイスをカプセル封じするための多層膜
JP2013012426A (ja) * 2011-06-30 2013-01-17 Nippon Seiki Co Ltd 有機ｅｌパネル及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003203762A (ja) * 2001-11-01 2003-07-18 Sony Corp 表示装置
JP2006261123A (ja) * 2006-03-17 2006-09-28 Semiconductor Energy Lab Co Ltd カーオーディオ、表示装置、音響再生装置、及び携帯情報端末
WO2008066122A1 (fr) * 2006-11-30 2008-06-05 Kyocera Corporation Dispositif el organique et procédé de fabrication correspondant
JP2011520216A (ja) * 2008-04-09 2011-07-14 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ 酸素及び／又は水分に敏感な電子デバイスをカプセル封じするための多層膜
JP2011108566A (ja) * 2009-11-20 2011-06-02 Konica Minolta Holdings Inc 有機ｅｌパネル
JP2013012426A (ja) * 2011-06-30 2013-01-17 Nippon Seiki Co Ltd 有機ｅｌパネル及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018198973A1 (fr) * 2017-04-27 2018-11-01 住友化学株式会社 Composition et élément électroluminescent faisant appel à ladite composition
JPWO2018198973A1 (ja) * 2017-04-27 2019-06-27 住友化学株式会社 組成物及びそれを用いた発光素子
CN110574496A (zh) * 2017-04-27 2019-12-13 住友化学株式会社 组合物及使用其的发光元件
KR20190141713A (ko) * 2017-04-27 2019-12-24 스미또모 가가꾸 가부시키가이샤 조성물 및 그것을 사용한 발광 소자
CN110574496B (zh) * 2017-04-27 2022-01-11 住友化学株式会社 组合物及使用其的发光元件
US11532790B2 (en) 2017-04-27 2022-12-20 Sumitomo Chemical Company, Limited Composition and light emitting device using the same
KR102513175B1 (ko) * 2017-04-27 2023-03-24 스미또모 가가꾸 가부시키가이샤 조성물 및 그것을 사용한 발광 소자

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