WO2014132909A1 - 電子増幅用基板および電子増幅用基板の製造方法 - Google Patents
電子増幅用基板および電子増幅用基板の製造方法 Download PDFInfo
- Publication number
- WO2014132909A1 WO2014132909A1 PCT/JP2014/054284 JP2014054284W WO2014132909A1 WO 2014132909 A1 WO2014132909 A1 WO 2014132909A1 JP 2014054284 W JP2014054284 W JP 2014054284W WO 2014132909 A1 WO2014132909 A1 WO 2014132909A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- hole
- glass substrate
- conductive layer
- electronic amplification
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 167
- 230000003321 amplification Effects 0.000 title claims abstract description 125
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 125
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000011521 glass Substances 0.000 claims abstract description 89
- 230000005684 electric field Effects 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 17
- 239000006089 photosensitive glass Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 134
- 208000028659 discharge Diseases 0.000 description 30
- 238000005530 etching Methods 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- 238000001514 detection method Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 239000011295 pitch Substances 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- KXSKAZFMTGADIV-UHFFFAOYSA-N 2-[3-(2-hydroxyethoxy)propoxy]ethanol Chemical compound OCCOCCCOCCO KXSKAZFMTGADIV-UHFFFAOYSA-N 0.000 description 7
- 101000693243 Homo sapiens Paternally-expressed gene 3 protein Proteins 0.000 description 7
- 102100025757 Paternally-expressed gene 3 protein Human genes 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910018068 Li 2 O Inorganic materials 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 description 4
- 229910052912 lithium silicate Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 241000511976 Hoya Species 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
- H01J47/06—Proportional counter tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/08—Cathode arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/28—Measuring radiation intensity with secondary-emission detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2935—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using ionisation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
- H01J47/02—Ionisation chambers
- H01J47/026—Gas flow ionisation chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
- H01J9/125—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes of secondary emission electrodes
Definitions
- the present invention relates to an electronic amplification substrate and a method for manufacturing the electronic amplification substrate.
- detectors that use electron avalanche amplification by a gas electron amplifier are known as detectors that detect particle beams or electromagnetic waves.
- both sides of an insulating plate-like member such as polyimide are covered with an electrode layer having conductivity such as copper, and further penetrate the front and back of the laminate of the plate-like member and the electrode layer.
- An electronic amplification substrate having a plurality of through holes is provided. Then, with the electron amplification substrate placed in the detection gas, a potential electric field is applied between the electrode layers of the electron amplification substrate to create a strong electric field in the plurality of through holes, and the electric avalanche amplification is performed by the electric field. To increase the number of ionized electrons so that it can be captured as a signal. By doing in this way, the measurement about the ionization electron in detection gas is enabled (for example, refer patent document 1).
- the electronic amplification substrate constituting the GEM is provided on each of both surfaces of the plate-like member 52 for the purpose of suppressing the occurrence of discharge in the through hole 51.
- Providing a guard ring portion 53 on the side has been proposed (see Non-Patent Document 1, for example).
- the guard ring portion 53 is a planar ring-shaped gap groove formed along the outer periphery of the opening of the through hole 51.
- a land portion 55 that is not electrically connected to the electrode layer 54 exists at the periphery of the opening portion of the through hole 51.
- the electronic amplification substrate having a structure in which the guard ring portions 53 are provided on both surfaces of the plate-like member 52 has the following drawbacks.
- An object of the present invention is to provide an electronic amplification substrate and a method for manufacturing the same that can obtain a sufficient amplification factor during avalanche amplification.
- an aspect of the present invention provides: An insulating glass substrate; Conductive layers formed on both main surfaces of the glass substrate; A plurality of through-holes formed in a laminate of the glass substrate and the conductive layer, An electronic amplification substrate configured to form an electric field in the through hole due to a potential difference between the two conductive layers when a voltage is applied to the surface of the conductive layer to cause an avalanche amplification in the through hole, On at least one main surface of the glass substrate, an insulating portion, one end of the insulating portion surrounds the opening of the through hole of the glass substrate, and the other end of the conductive layer An electronic amplification substrate characterized by being formed so as to be in contact with an end portion.
- Another aspect of the present invention provides: An insulating glass substrate; Conductive layers formed on both main surfaces of the glass substrate; A plurality of through-holes formed in a laminate of the glass substrate and the conductive layer, A method of manufacturing an electronic amplification substrate configured to form an electric field in the through-hole due to a potential difference between both conductive layers when a voltage is applied to the surface of the conductive layer to cause an avalanche amplification in the through-hole. Because By processing the formed conductive layer using a laser beam, the end portion of the conductive layer formed on at least one main surface of the glass substrate is removed from the opening of the through hole of the glass substrate. And a step of retreating.
- the method for manufacturing an electronic amplification substrate characterized by comprising:
- the present invention it is possible to obtain a sufficient amplification factor when amplifying an electron avalanche while suppressing generation of a discharge that leads to destruction of an electric circuit for reading a signal without reducing a voltage applied to an electrode layer. It becomes possible.
- FIG. 1 is an explanatory diagram illustrating a schematic configuration example of a detector according to the present embodiment.
- 2A and 2B are explanatory views showing a configuration example of a main part of the electronic amplification substrate according to the present embodiment.
- FIG. 2A is a perspective view and FIG. 2B is a side sectional view.
- FIG. 3 is a diagram illustrating an example of an electronic amplification substrate.
- FIG. 4 is a diagram illustrating an example in which corner portions of the glass base material are chamfered in the electronic amplification substrate according to the present embodiment.
- FIG. 5 is an explanatory diagram (part 1) illustrating an example of a method for manufacturing the electronic amplification substrate according to the present embodiment.
- FIG. 6 is an explanatory diagram (part 2) illustrating an example of a method for manufacturing the electronic amplification substrate according to the present embodiment.
- FIG. 7 is a perspective view showing a configuration example of a main part of a conventional electronic amplification substrate.
- the detector can measure ionized electrons by using electron avalanche amplification in a detection gas, and is configured to detect particle beams or electromagnetic waves.
- Electrode avalanche amplification used by the detector means that when a free electron collides with a gas molecule in a strong electric field, a new electron is knocked out, and this is accelerated by the electric field and collides with another molecule to accelerate. The phenomenon that the number of electrons increases.
- Detectors that use electronic avalanche amplification include, for example, a gas proportional counter (CGPC).
- CGPC gas proportional counter
- a detector that causes electronic avalanche amplification using GEM is called a detector.
- GEM refers to a state where an electronic amplification substrate having a plurality of fine through-holes arranged two-dimensionally is arranged in a detection gas, and a strong electric field is generated in the through-hole of the electronic amplification substrate.
- the electronic amplification substrate may be a single plate or may be a multi-layered substrate.
- Particle beams that can be detected by detectors include alpha rays, beta rays, proton beams, heavy charged particle beams, electron beams (those that accelerate electrons with an accelerator regardless of nuclear decay), neutron beams, and space. Lines etc. are included.
- the “electromagnetic wave” includes radio waves (low frequency, super long wave, long wave, medium wave, short wave, ultra short wave, microwave), light (infrared ray, visible ray, ultraviolet ray), X-ray, gamma ray and the like. Which of these is to be detected can be set as desired by appropriately selecting the type of detection gas, the strength of the electric field to be created, and the like.
- the above-described detector that is, a detector that detects particle beams or electromagnetic waves using electronic avalanche amplification by GEM has the configuration shown in FIG.
- a detector 1 shown in FIG. 1 includes a drift electrode 3 and a readout electrode 4 inside a chamber 2 filled with a predetermined type of detection gas, and is disposed between the drift electrode 3 and the readout electrode 4.
- the electronic amplification substrate 10 is provided.
- the electronic amplification substrate 10 realizes a function as a GEM by causing an electronic avalanche amplification, and a plurality of through-holes are formed in a laminate 14 in which conductive layers 12 and 13 are formed on both main surfaces of the glass substrate 11.
- the holes 15 are configured in a two-dimensional array.
- the plurality of through-holes 15 each have a circular shape when the electronic amplification substrate 10 is viewed in plan, and are arranged at regular intervals.
- the chamber 2 is configured so that particle beams or electromagnetic waves to be detected can enter from the outside.
- a predetermined voltage is applied to the drift electrode 3 and the readout electrode 4 in the chamber 2 from a power supply unit (not shown). Further, a predetermined voltage is applied to the conductive layers 12 and 13 on both main surfaces of the electronic amplification substrate 10 from a power supply unit (not shown) so as to function as electrodes.
- an electric field E1 is generated in a region 5 (hereinafter referred to as “drift region”) between the drift electrode 3 and the electronic amplification substrate 10, and the electronic amplification substrate 10 and the readout electrode are generated.
- An electric field E3 is generated in a region 6 between 4 (hereinafter referred to as “induction region”) 6. Further, an electric field E2 is generated in the through hole 15 of the electronic amplification substrate 10.
- the electric field E2 is converged in the hole of the through hole 15 and the electrons that have entered the electron hole are accelerated.
- electron avalanche amplification occurs, and the electrons multiplied by the electron avalanche amplification are measured by the readout electrode 4. It is configured.
- an integrated circuit (Application Specific Integrated Circuit, hereinafter referred to as “ASIC”) 7 having functions as a protection circuit, an amplifier circuit, a noise filter circuit and the like is connected to the readout electrode 4.
- the ASIC 7 is for enabling a signal output to an external device (for example, a host device of the detector 1) for the measurement result at the readout electrode 4, and functions as an electric circuit for signal readout. . That is, the detector 1 measures the electrons multiplied by the electron avalanche amplification generated in the through hole 15 of the electron amplification substrate 10 with the readout electrode 4, and connects the measurement result to the readout electrode 4. It is configured to output to the outside through.
- the electronic amplification substrate 10 has a configuration in which a plurality of through holes 15 are two-dimensionally arranged in a laminate 14 in which conductive layers 12 and 13 are formed on both main surfaces of a glass substrate 11. In FIG. 2, only one through hole is shown. By applying a voltage to each of the conductive layers 12 and 13 and applying a potential difference between the two conductive layers 12 and 13, an electric field is formed in the through hole 15, and electron avalanche amplification occurs in the through hole 15.
- the base material constituting the electronic amplification substrate 10 is required to be an insulating material.
- a resin material such as polyimide is used as a base material, but there are problems that the resin material has low heat resistance, smoothness, rigidity, and the like, and outgas may occur. Therefore, in this embodiment, the glass base material 11 is used as an insulating material.
- the glass substrate 11 is formed by arranging the through holes 15 having a fine hole diameter at a fine pitch, a glass material that can be finely processed is used.
- photosensitive glass it is preferable to use photosensitive glass as such a glass substrate. By using photosensitive glass, it is possible to apply a fine processing technique used in a semiconductor manufacturing process and form a plurality of through holes having desired dimensions and arrangement pitches.
- SiO 2 —Li 2 O—Al 2 O 3 glass contains a small amount of Au, Ag, Cu as a photosensitive component, and CeO 2 as a sensitizer. Use included glass.
- a redox reaction occurs between the sensitizer and the photosensitive component, and metal atoms are generated.
- metal atoms aggregate to form a colloid, and Li 2 O.SiO 2 (lithium metasilicate) crystals precipitate and grow using this colloid as a crystal nucleus.
- the precipitated Li 2 O ⁇ SiO 2 (lithium metasilicate) is easily dissolved in hydrogen fluoride (HF), and the dissolution rate is about 50 times that of the glass portion not irradiated with ultraviolet rays. There is a difference. By utilizing this difference in dissolution rate, it becomes possible to perform selective etching in which only a portion irradiated with ultraviolet rays (crystal portion) is etched, and fine processing can be performed without using machining.
- Examples of such photosensitive glass include “PEG3 (trade name)” manufactured by HOYA Corporation.
- conductive layers 12 and 13 are formed on both of the main surfaces of the glass substrate 11, respectively.
- the conductive layers 12 and 13 are formed of a conductive material, and the surface layer has a role as an electrode layer.
- a conductive material for example, a metal material such as Cu (copper) can be used.
- the conductive layers 12 and 13 do not necessarily have a single-layer structure, and may have a multilayer structure as long as each layer is electrically connected.
- a layer of Cr (chromium) or the like may be interposed between the glass substrate 11 and the copper layer in order to improve adhesion to the glass substrate 11.
- the end portions 12 a and 13 a of the conductive layers 12 and 13 are formed in the through hole over the entire circumference of the through hole 15.
- the through hole 15 formed in the substrate 10 includes a through hole 15 a formed in the glass base 11 and two through holes 15 b formed in the conductive layers 12 and 13.
- the diameter of the through hole 15b is larger than the diameter of the through hole 15a.
- the conductive layer is not present between the flush position and the retracted position, and the insulating portion 20 is formed. That is, the opening portion of the through hole 15a is surrounded by one end portion of the insulating portion 20, and the other end portion of the insulating portion 20 is in contact with the end portion of the conductive layer.
- the insulating portion 20 is composed of a space where the conductive layers 12 and 13 are not formed. In other words, an insulating action is generated by a gas (such as a detection gas filled in the chamber) existing in the space. Moreover, you may comprise the insulation part 20 with resin etc. which have insulation.
- the presence of the insulating portion 20 increases the distance between the end 12a of the conductive layer 12 and the end 13a of the conductive layer 13. This means that a virtual conductive path connecting the conductive layers 12 and 13 becomes long, so that discharge between the conductive layers can be suppressed. Moreover, not only the discharge distance is simply increased, but the peripheral portion of the hole where the lines of electric force are concentrated can be kept away from the hole. Therefore, it is considered that the discharge is suppressed only when the end portion of the conductive layer slightly recedes from the opening of the through hole. Note that the end portions of the conductive layers 12 and 13 recede from the opening portion of the through hole 15a, and there is no conductive portion between the end portion and the opening portion. The voltage does not drop.
- the receding distances of the end portions 12a and 13a of the conductive layers 12 and 13 may be determined in consideration of a decrease in the amplification factor in the through hole due to the receding end portions and an improvement in the amplification factor due to suppression of discharge. Since the effect of suppressing discharge by the receding of the end portion is large, the receding distance is preferably small, and in this embodiment, it is preferably 30 ⁇ m or less. Further, the receding distance of the end portion also depends on the precision of the fine processing technique. In this embodiment, for example, when the diameter of the through holes 15 is 170 to 185 ⁇ m and the arrangement pitch of the through holes is 280 ⁇ m, the receding distance is about 10 ⁇ m.
- the peripheral edge portion (insulating portion 20) of the through hole 15b formed in the conductive layers 12 and 13 surrounds the through hole 15a formed in the glass substrate 11 in an annular shape. It is out. That is, the insulating portion is formed so that the receding distance of the end portion is constant over the entire circumference of the through hole 15, but it is formed so as to recede from the opening of the through hole over the entire circumference of the through hole. For example, the retreat distance may not be constant. That is, the insulating part may be formed so that the receding distance changes. In addition, the receding distance of the end portion in the conductive layer 12 may be different from the receding distance of the end portion in the conductive layer 13.
- the corner 11a of the opening of the through hole 15b of the glass substrate 11 is chamfered. Since the glass substrate is insulative, electrons amplified in the through holes may be charged (charged up) on the glass substrate. Since charge-up is likely to occur in sensitive parts such as ridge lines, it is preferable to chamfer corners.
- the shape of the chamfer is not particularly limited, and may be a shape that can suppress charge-up.
- the corner may be a flat shape or a rounded shape.
- PEG3 which is a photosensitive glass, has a volume resistivity of about 8.5 ⁇ 10 12 ⁇ m, it has a lower insulation resistance than polyimide having a volume resistivity of 10 15 ⁇ m or more. Hard to be charged. Therefore, charge-up is further suppressed by chamfering. Since chamfering may cause a discharge between the conductive layers 12 and 13 easily, it is preferable to set the chamfering amount in consideration of this point.
- a flat glass substrate 11 made of photosensitive glass such as “PEG3” is prepared.
- the glass substrate 11 has a desired dimension, and is, for example, a rectangular shape having an outer shape of 300 mm ⁇ 300 mm and a thickness of about 0.3 mm to 1 mm.
- FIG.5 (b) the photomask 21 in which the desired pattern was formed is piled up on the prepared glass base material 11, and ultraviolet-ray 22 is applied with respect to the glass base material 11 through the photomask 21.
- an oxidation-reduction reaction occurs between the photosensitive component and the sensitizer, and a metal atom is generated.
- the glass substrate 11 after the ultraviolet irradiation is subjected to a heat treatment at a temperature of 450 to 600 ° C., for example.
- a heat treatment at a temperature of 450 to 600 ° C., for example.
- metal atoms generated by ultraviolet irradiation aggregate to form a colloid, and this colloid is used as a crystal nucleus to form Li 2 O.SiO 2 (lithium metasilicate).
- Crystal portion 23 precipitates and grows.
- the conductive layers 12 and 13 are formed with respect to both the main surfaces of the glass base material 11 in which the through-hole was formed.
- a conductive layer having a two-layer structure of a chromium (Cr) layer and a copper (Cu) layer is formed.
- the method for forming the conductive layer is not particularly limited, and a sputtering method, a plating method, or the like may be used.
- a chromium layer is formed on the surface of the glass substrate on which the through holes are formed by a sputtering method, and a copper layer is formed thereon.
- the thickness of the conductive layer is, for example, about 2 ⁇ m.
- the method for retracting the end of the conductive layer is not particularly limited.
- the end of the conductive layer is retracted by processing using a laser beam.
- a laser beam 31 having a predetermined energy is applied to the peripheral portion of the through-hole 15 which is a portion 30 to be removed of the conductive layers 12 and 13, and the conductive layers 12,
- the diameter of the through hole 15b formed in the 13 portion is increased, that is, the diameter is larger than the diameter of the through hole 15a formed in the glass substrate 11 (for example, a diameter 40 ⁇ m larger than the diameter of the through hole 15a).
- the laser beam 31 is scanned so that the hole is formed in the conductive layer.
- the portion 30 to be removed of the conductive layer (chrome layer and copper layer) irradiated with the laser beam 31 evaporates, and the end portions 12a and 13a of the conductive layers 12 and 13 recede from the opening of the through hole, and the insulating portion 20 is formed. That is, an electronic amplification substrate having a configuration as shown in FIG. 6B is obtained.
- the laser beam is preferably a UV laser or a femtosecond laser.
- the output of the laser beam may be determined in consideration of the retreat amount of the end portion, the composition of the conductive layer to be removed, the thickness, and the like.
- the end of the conductive layer can be efficiently and accurately retracted.
- the end of the conductive layer advances (the conductive layer is formed toward the center of the through hole), but the advance amount is about 1 ⁇ m at maximum, so the advance amount by plating is The effects described above can be sufficiently obtained by setting the reverse amount in consideration.
- chamfering is performed by an etching. Specifically, the etching is performed using an etching solution having higher activity than the etching solution used for forming the through holes 15 in the glass substrate 11. When the glass substrate 11 is etched using such an etchant, the activity of the etchant is high, so that the corners 11a that are glass portions are partially removed and chamfered. In addition, it does not restrict
- the chamber 2 of the detector 1 is filled with a predetermined type of detection gas. Further, in order to draw electrons generated in the drift region 5 toward the read electrode 4, the drift electrode 3, the read electrode 4, and the conductive layers 12 and 13 of the electron amplification substrate 10 are respectively provided. Different voltages are applied to generate the electric fields E1, E2, and E3. That is, in order to give a potential difference that increases the force of attracting electrons toward the read electrode 4, the drift electrode 3, the read electrode 4, and the conductive layers 12, 13 of the electron amplification substrate 10 Apply a voltage to each.
- a mixed gas of Ar 70% and CH 4 30% is filled in the chamber 2 at a pressure of 1 atm as a detection gas.
- the drift electrode 3, the readout electrode 4, and the electronic amplification are performed so that the electric field E 1 in the drift region 5 is about 125 to 500 V / cm and the electric field E 3 in the induction region 6 is about 2.5 to 5 kV / cm.
- the magnitude of the applied voltage with respect to the substrate 10 and the positional relationship (size of the interval) are set as appropriate.
- the voltage applied to each of the conductive layers 12 and 13 of the electronic amplification substrate 10 is set as appropriate so that an electric field E2 sufficient to cause an electron avalanche amplification in the hole of the through hole 15 can be formed. Keep it.
- Electrons multiplied by electron avalanche amplification are attracted to the read electrode 4 side by the electric field E3 formed in the induction region 6. Then, the number of electrons is read out as a signal by the readout electrode 4.
- the readout electrode 4 that performs such signal readout is divided into small areas. Therefore, it can be specified in which area the electrons are measured.
- the detector 1 can detect the X-ray that is the detection target.
- the end portions 12 a and 13 a of the conductive layers 12 and 13 are retracted from the opening portion of the through hole 15 a of the glass substrate 11.
- the diameter of the through hole 15 b formed in the conductive layers 12 and 13 is larger than the diameter of the through hole 15 a formed in the glass substrate 11.
- the opening of the through hole 15 a of the glass substrate 11 is surrounded by the insulating part 20. Therefore, there is a distance (discharge distance) between the conductive layers 12 and 13 formed on both main surfaces of the glass substrate 11, that is, in the through hole 15, between the ends of the conductive layer where electric lines of force tend to concentrate.
- the peripheral portion of the hole where the lines of electric force concentrate can be moved away from the hole, so that the discharge can be effectively suppressed. And such an effect can be acquired with the simple structure mentioned above.
- the end portions 12a and 13a of the conductive layers 12 and 13 are retracted, there is a possibility that the number of lines of electric force passing through the through holes 15 may be reduced. However, by suppressing discharge, the applied voltage is reduced. As a result, the amplification factor can be improved. Specifically, an amplification factor of 10 4 or more, preferably about 10 5 can be obtained.
- the applied voltage does not decrease even in the vicinity of the end portion of the conductive layer, so that a strong electric field can be formed inside the through hole. Therefore, a sufficient amplification factor can be ensured.
- angular part 11a of the through-hole 15a of the glass base material 11 is chamfered. That is, since the corner portion 11a of the through hole 15a is not sharp, it is difficult for electrons generated in the through hole 15 to be charged up to the insulating glass substrate 11. Therefore, the electrons generated in the through hole 15 can reach the readout electrode 4 without being adsorbed by the glass substrate.
- the electronic amplification substrate 10 having the above-described configuration is manufactured by processing using a laser beam.
- the end portions 12 a and 13 a of the conductive layers 12 and 13 are made to recede from the openings of the through holes 15 of the glass substrate 11 by evaporating part of the conductive layers 12 and 13 by irradiation with a laser beam.
- the end portion of the conductive layer can be easily and efficiently retracted.
- the retreat distance of the end of the conductive layer exceeds 150 ⁇ m, and the arrangement pitch exceeds 400 ⁇ m. It is speculated that it will end up.
- the end portions of the conductive layers 12 and 13 formed on both the main surfaces of the electronic amplification substrate 10 are retracted.
- the configuration may be such that only the end of one conductive layer is retracted. Even with such a configuration, the effect of suppressing the discharge can be obtained as described above. However, there is a possibility that the risk of discharge is slightly increased as compared with the above-described embodiment.
- the conductive layer located on the electron entrance side drift electrode 3 side
- the conductive layer that is, the end of the conductive layer 13 is preferably not set back.
- photosensitive glass is used as the glass substrate, but for example, crystallized glass obtained by crystallizing photosensitive glass may be used.
- a part of the conductive layer is removed by a processing technique using a laser beam.
- a part of the conductive layer may be removed by etching using a resist film or a mask. Specifically, before and after the through hole 15a is formed in the glass substrate 11, a resist film is formed on the substrate, or a mask is overlapped to form a portion to be an insulating portion surrounding the opening of the through hole 15a. After exposure, the portion may be removed by wet etching or the like.
- the case where there is only one electronic amplification substrate 10 in the chamber 2 is illustrated.
- a plurality of electronic amplification substrates 10 may be provided in the chamber 2.
- the configuration of the apparatus is complicated as compared with the case of only one substrate, but it is easy to increase the gain at the time of amplification of the electronic avalanche. It becomes feasible.
- the through hole 15 in the electronic amplification substrate 10 is a round hole
- the through-hole 15 may be other shapes such as a square hole instead of a round hole as long as the electric field can be formed in the hole.
- the readout electrode 4 and the like in the chamber 2 constituting the detector 1 are formed in a flat plate shape.
- the readout electrode 4 or the like may be formed in a linear shape called, for example, a microstrip.
- Example 1 As a glass substrate, PEG3 manufactured by HOYA Corporation was used. PEG3 was a photosensitive glass and had a composition of SiO 2 —Li 2 O—Al 2 O 3 . The thickness of PEG3 was 0.7 mm.
- this glass substrate is exposed to ultraviolet rays, and crystals are deposited on the portion irradiated with ultraviolet rays, Furthermore, it heated at 600 degreeC.
- etching was performed using hydrogen fluoride (HF) to remove a portion irradiated with ultraviolet rays, thereby forming a through hole having a diameter of 50 ⁇ m.
- HF hydrogen fluoride
- a chromium thin film was formed on the glass substrate by sputtering on the glass substrate on which the through holes were formed, and a copper thin film was formed thereon to form a conductive layer.
- the thickness of the conductive layer was 2 ⁇ m.
- Both the main surfaces of the glass substrate on which the conductive layer was formed were processed to retreat the end portions of both conductive layers using a UV laser (wavelength: 355 nm).
- the receding distance was 20 ⁇ m.
- Example 2 The same PEG3 as in Example 1 was used as the glass substrate. Using a mask having a pattern for forming through holes having a diameter of 50 ⁇ m at an arrangement pitch of 150 ⁇ m, this glass substrate is exposed to ultraviolet rays, and crystals are deposited on the portion irradiated with ultraviolet rays, Furthermore, it heated at 600 degreeC. Then, the thin film of chromium was formed on the glass base material by sputtering, and the thin film of copper was formed on it, and the electrically conductive layer was comprised. The thickness of the conductive layer was 2 ⁇ m.
- a resist film was formed on the conductive layer, and laser exposure development was performed. At this time, exposure was performed on a portion having a diameter 40 ⁇ m larger than the diameter of the through hole to be formed.
- etching was performed using iron chloride (FeCl 3 ) to remove the conductive layer. That is, holes having a diameter of 90 ⁇ m were formed in the conductive layer at an array pitch of 150 ⁇ m.
- the glass substrate exposed by etching the conductive layer was etched using hydrogen fluoride (HF), and the portion irradiated with ultraviolet rays was removed to form a through hole.
- HF hydrogen fluoride
- through holes having a diameter of 50 ⁇ m were formed at an arrangement pitch of 150 ⁇ m, and the end portion of the conductive layer was recessed 20 ⁇ m from the opening of the through hole.
- a detector was constructed to detect X-rays. As a result, even when the applied voltage was 3000 V, no discharge occurred between the conductive layers.
- Example 3 The electronic amplification substrate obtained in Example 2 was further etched using hydrogen fluoride (HF) at 60 ° C., and the corners of the openings of the through holes were rounded. A detector was constructed using the obtained electronic amplification substrate, and X-ray detection was performed. As a result, it was confirmed that even when the applied voltage was 3000 V, discharge between the conductive layers did not occur and charge-up inside the through hole was suppressed.
- HF hydrogen fluoride
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
- Electron Tubes For Measurement (AREA)
Abstract
Description
絶縁性を有するガラス基材と、
前記ガラス基材の両主面に形成された導電層と、
前記ガラス基材と前記導電層との積層体に形成された複数の貫通孔と、を備え、
前記導電層表面への電圧印加時の両導電層間の電位差により前記貫通孔内に電界を形成して当該貫通孔内にて電子雪崩増幅を起こすように構成された電子増幅用基板であって、
前記ガラス基材の少なくとも一方の主面上に、絶縁部が、当該絶縁部の一方の端部は前記ガラス基材の前記貫通孔の開口部を取り囲み、かつ他方の端部が前記導電層の端部と接するように形成されていることを特徴とする電子増幅用基板である。
絶縁性を有するガラス基材と、
前記ガラス基材の両主面に形成された導電層と、
前記ガラス基材と前記導電層との積層体に形成された複数の貫通孔と、を備え、
前記導電層表面への電圧印加時の両導電層間の電位差により前記貫通孔内に電界を形成して当該貫通孔内にて電子雪崩増幅を起こすように構成された電子増幅用基板を製造する方法であって、
形成された前記導電層をレーザー光線を用いて加工することにより、前記ガラス基材の少なくとも一方の主面に形成された前記導電層の端部を、前記ガラス基材の前記貫通孔の開口部よりも後退させる工程と、を有することを特徴とする電子増幅用基板の製造方法である。
1.検出器の概略構成
2.電子増幅用基板の構成
3.電子増幅用基板の製造方法
4.検出器における電離電子の測定手順
5.本実施形態の効果
6.変形例等
まず、本実施形態に係る電子増幅用基板を用いて構成される検出器の概略構成について説明する。検出器は、検出ガス中での電子雪崩増幅を利用して電離電子についての測定を行うことを可能にし、これにより粒子線または電磁波の検出を行うように構成されたものである。
次に、本実施形態に係る電子増幅用基板10の構成を図2を用いて説明する。
次に、本実施形態に係る電子増幅用基板10の製造方法を図5および6を用いて説明する。
次に、本実施形態に係る電子増幅用基板10を用いて検出器1を構成した場合において、その検出器1で電離電子の測定を行い、これにより粒子線または電磁波の検出を行う際の手順について、図1を参照しながら具体的に説明する。ここでは、X線を検出対象とした場合を例に挙げて、以下の説明を行う。
本実施形態においては、導電層12,13の端部12a、13aが、ガラス基材11の貫通孔15aの開口部から後退している。換言すれば、導電層12,13に形成された貫通孔15bの径が、ガラス基材11に形成された貫通孔15aの径よりも大きくなっている。このことは、ガラス基材11の貫通孔15aの開口部が絶縁部20により取り囲まれていることを意味している。そのため、ガラス基材11の両主面に形成された導電層12,13間、すなわち、貫通孔15内において、電気力線が集中しやすい導電層の端部の間の距離(放電距離)が長くなることに加え、電気力線が集中する孔の周辺部分を孔から遠ざけることができるため、放電を効果的に抑制することができる。しかも、このような効果は、上述した簡便な構成で得ることができる。
上述した実施形態では、電子増幅用基板10の主面の両方に形成された導電層12および13の端部を後退させている。しかしながら、一方の導電層の端部のみを後退させる構成であってもよい。このような構成であっても、上述したように放電抑制の効果を得ることができる。ただし、上述した実施形態に比較して、放電のリスクは若干高まる可能性がある。
ガラス基材として、HOYA株式会社製PEG3を用いた。PEG3は感光性ガラスであり、SiO2-Li2O-Al2O3の組成を有していた。また、PEG3の厚みは0.7mmであった。
ガラス基材として、実施例1と同様のPEG3を用いた。50μmの径を有する貫通孔を150μmの配列ピッチで形成するためのパターンを有するマスクを用いて、このガラス基材に対し紫外線による露光を行い、紫外線が照射された部分に結晶を析出させて、さらに600℃に加熱した。続いて、スパッタリングにより、ガラス基材の上にクロムの薄膜を形成し、その上に銅の薄膜を形成して導電層を構成した。導電層の厚みは2μmであった。
実施例2で得られた電子増幅用基板に対し、さらに60℃としたフッ化水素(HF)を用いてエッチングを行い、貫通孔の開口部の角部を丸めた。得られた電子増幅用基板を用いて、検出器を構成し、X線の検出を行った。その結果、印加電圧を3000Vとした場合であっても、導電層間の放電は生じないことに加え、貫通孔内部のチャージアップが抑制されていることが確認できた。
2…チャンバ
3…ドリフト電極
4…読み出し電極
10…電子増幅用基板
14…積層体
11…ガラス基材
12,13…導電層
15…貫通孔
Claims (8)
- 絶縁性を有するガラス基材と、
前記ガラス基材の両主面に形成された導電層と、
前記ガラス基材と前記導電層との積層体に形成された複数の貫通孔と、を備え、
前記導電層表面への電圧印加時の両導電層間の電位差により前記貫通孔内に電界を形成して当該貫通孔内にて電子雪崩増幅を起こすように構成された電子増幅用基板であって、
前記ガラス基材の少なくとも一方の主面上に、絶縁部が、当該絶縁部の一方の端部は前記ガラス基材の前記貫通孔の開口部を取り囲み、かつ他方の端部が前記導電層の端部と接するように形成されていることを特徴とする電子増幅用基板。 - 前記ガラス基材の少なくとも一方の主面上の前記導電層の端部が、前記ガラス基材の前記貫通孔の開口部よりも後退するように形成されていることを特徴とする請求項1に記載の電子増幅用基板。
- 検出器を構成するドリフト電極と読み出し電極との間に配置された前記電子増幅用基板であって、
前記読み出し電極と対向する主面に形成された前記導電層の端部が、前記ガラス基材の前記貫通孔の開口部よりも後退していることを特徴とする請求項2に記載の電子増幅用基板。 - 検出器を構成するドリフト電極と読み出し電極との間に配置された前記電子増幅用基板であって、
前記電子増幅用基板の断面において、前記主面の両方に形成された前記導電層の端部が、前記ガラス基材の前記貫通孔の開口部よりも後退していることを特徴とする請求項2または3に記載の電子増幅用基板。 - 前記ガラス基材に形成された前記貫通孔の角部が面取りされていることを特徴とする請求項1~4のいずれかに記載の電子増幅用基板。
- レーザー光線を用いる加工により、前記導電層の端部が前記ガラス基材の前記貫通孔の開口部よりも後退していることを特徴とする請求項1~5のいずれかに記載の電子増幅用基板。
- 前記ガラス基材は、感光性ガラスから構成されていることを特徴とする請求項1~6に記載の電子増幅用基板。
- 絶縁性を有するガラス基材と、
前記ガラス基材の両主面に形成された導電層と、
前記ガラス基材と前記導電層との積層体に形成された複数の貫通孔と、を備え、
前記導電層表面への電圧印加時の両導電層間の電位差により前記貫通孔内に電界を形成して当該貫通孔内にて電子雪崩増幅を起こすように構成された電子増幅用基板を製造する方法であって、
前記導電層をレーザー光線を用いて加工することにより、前記ガラス基材の少なくとも一方の主面に形成された前記導電層の端部を、前記ガラス基材の前記貫通孔の開口部よりも後退させる工程と、を有することを特徴とする電子増幅用基板の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/769,003 US20150380224A1 (en) | 2013-03-01 | 2014-02-24 | Electronic amplifying substrate and method of manufacturing electronic amplifying substrate |
DE112014001095.2T DE112014001095T5 (de) | 2013-03-01 | 2014-02-24 | Substrat für elektronische Verstärkung und Verfahren zum Herstellen eines Substrats für elektronische Verstärkung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-041016 | 2013-03-01 | ||
JP2013041016A JP2014170642A (ja) | 2013-03-01 | 2013-03-01 | 電子増幅用基板および電子増幅用基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014132909A1 true WO2014132909A1 (ja) | 2014-09-04 |
Family
ID=51428174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2014/054284 WO2014132909A1 (ja) | 2013-03-01 | 2014-02-24 | 電子増幅用基板および電子増幅用基板の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20150380224A1 (ja) |
JP (1) | JP2014170642A (ja) |
DE (1) | DE112014001095T5 (ja) |
WO (1) | WO2014132909A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014224449A1 (de) * | 2014-11-28 | 2016-06-02 | Forschungszentrum Jülich GmbH | Szintillationsdetektor mit hoher Zählrate |
US9880291B2 (en) * | 2015-03-02 | 2018-01-30 | Beamocular Ab | Ionizing radiation detecting device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001508935A (ja) * | 1997-10-22 | 2001-07-03 | ヨーロピアン オーガナイゼイション フォー ニュークリア リサーチ | 非常に高性能な放射線検出器と、このような放射線検出器を含む視差のない平面天球型x線イメージ装置 |
JP2008534950A (ja) * | 2005-03-29 | 2008-08-28 | ザ サイエンス アンド テクノロジー ファシリティーズ カウンシル | 放射線検出装置、放射線検出装置の製造方法、放射線検出方法、ウインドウ、および放射線検出装置のウインドウの製造方法 |
WO2012073759A1 (ja) * | 2010-12-01 | 2012-06-07 | Hoya株式会社 | 電子増幅器用基板の製造方法、電子増幅器の製造方法及び放射線検出器の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2727525B1 (fr) * | 1994-11-25 | 1997-01-10 | Centre Nat Rech Scient | Detecteur de rayonnements ionisants a microcompteurs proportionnels |
EP1916697B1 (en) * | 2005-07-29 | 2013-06-19 | Japan Science and Technology Agency | Microchannel plate, gas proportional counter and imaging device |
-
2013
- 2013-03-01 JP JP2013041016A patent/JP2014170642A/ja not_active Withdrawn
-
2014
- 2014-02-24 WO PCT/JP2014/054284 patent/WO2014132909A1/ja active Application Filing
- 2014-02-24 US US14/769,003 patent/US20150380224A1/en not_active Abandoned
- 2014-02-24 DE DE112014001095.2T patent/DE112014001095T5/de not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001508935A (ja) * | 1997-10-22 | 2001-07-03 | ヨーロピアン オーガナイゼイション フォー ニュークリア リサーチ | 非常に高性能な放射線検出器と、このような放射線検出器を含む視差のない平面天球型x線イメージ装置 |
JP2008534950A (ja) * | 2005-03-29 | 2008-08-28 | ザ サイエンス アンド テクノロジー ファシリティーズ カウンシル | 放射線検出装置、放射線検出装置の製造方法、放射線検出方法、ウインドウ、および放射線検出装置のウインドウの製造方法 |
WO2012073759A1 (ja) * | 2010-12-01 | 2012-06-07 | Hoya株式会社 | 電子増幅器用基板の製造方法、電子増幅器の製造方法及び放射線検出器の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20150380224A1 (en) | 2015-12-31 |
DE112014001095T5 (de) | 2015-11-12 |
JP2014170642A (ja) | 2014-09-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2013183324A1 (ja) | 電子増幅用ガラス基板およびその製造方法 | |
JP3354551B2 (ja) | ピクセル型電極によるガス増幅を用いた粒子線画像検出器 | |
JP4613319B2 (ja) | ガス放射線検出器 | |
US9123855B2 (en) | Manufacturing method of electron multiplier substrate, manufacturing method of electron multiplier and manufacturing method of radiation detector | |
JP5368392B2 (ja) | 電子線用レジスト膜及び有機導電性膜が積層された被加工基板、該被加工基板の製造方法、及びレジストパターンの形成方法 | |
JP5855577B2 (ja) | 電子増幅器用基板の製造方法、電子増幅器の製造方法及び放射線検出器の製造方法 | |
JP2013195407A (ja) | 放射線の空間強度分布及びエネルギーの空間分布の調整装置、並びに該調整装置を用いたx線発生装置及び放射線検出器 | |
JP6027583B2 (ja) | イオンフィルター及びその製造方法 | |
WO2014132909A1 (ja) | 電子増幅用基板および電子増幅用基板の製造方法 | |
JP2012013483A (ja) | ガス増幅を用いた放射線検出器、及びその製造方法 | |
WO2013141400A1 (ja) | 電子増幅用細孔ガラスプレートおよび検出器 | |
JP5912732B2 (ja) | 電子増幅用基板および検出器 | |
Marques et al. | Minimizing distortions with sectored GEM electrodes | |
JP2013200196A (ja) | 電子増幅用基板の製造方法および電子増幅用基板 | |
JP2016062736A (ja) | ガス電子増幅器用イオンフィルター | |
JP7143130B2 (ja) | 超伝導ストリップ、粒子検出装置および粒子検出方法 | |
KR101988856B1 (ko) | 이온 필터 및 이온 필터의 제조 방법 | |
JP6846031B2 (ja) | ガス電子増幅モジュール | |
JP6797373B2 (ja) | ガス電子増幅器用電極、ガス電子増幅器及びガス電子増幅器用電極の製造方法 | |
CN111508800B (zh) | 应用于穿越辐射探测器的放大单元的制备方法 | |
JP5754083B2 (ja) | ドライエッチング装置 | |
Roy et al. | Evaluation of gamma and neutron irradiation effects on the properties of mica film capacitors | |
Vogel et al. | Diagnostics of laser-induced spark discharges in air and vacuum | |
JP2010169537A (ja) | 放射線検出器および放射線分析装置 | |
JP2019502099A (ja) | 画素ボリュームの構成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14757528 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14769003 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 112014001095 Country of ref document: DE Ref document number: 1120140010952 Country of ref document: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14757528 Country of ref document: EP Kind code of ref document: A1 |