WO2014129052A1 - Dispositif d'estimation de température et dispositif semiconducteur - Google Patents

Dispositif d'estimation de température et dispositif semiconducteur Download PDF

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Publication number
WO2014129052A1
WO2014129052A1 PCT/JP2013/083227 JP2013083227W WO2014129052A1 WO 2014129052 A1 WO2014129052 A1 WO 2014129052A1 JP 2013083227 W JP2013083227 W JP 2013083227W WO 2014129052 A1 WO2014129052 A1 WO 2014129052A1
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WO
WIPO (PCT)
Prior art keywords
temperature
semiconductor
detection unit
unit
semiconductor module
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Application number
PCT/JP2013/083227
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English (en)
Japanese (ja)
Inventor
矢吹　俊生
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ダイキン工業株式会社
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Filing date
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Publication of WO2014129052A1 publication Critical patent/WO2014129052A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/42—Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K3/00—Thermometers giving results other than momentary value of temperature
    • G01K3/02—Thermometers giving results other than momentary value of temperature giving means values; giving integrated values
    • G01K3/06—Thermometers giving results other than momentary value of temperature giving means values; giving integrated values in respect of space
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures

Definitions

  • the present invention relates to a temperature estimation device and a semiconductor device, and more particularly to a temperature estimation device that estimates the temperature of a semiconductor element housed in a semiconductor module.
  • Inverters, choppers, and the like are known as semiconductor switching devices that perform switching to convert a DC voltage into another voltage.
  • the inverter converts a DC voltage into an AC voltage, and the chopper boosts / decreases the DC voltage and converts it to another DC voltage.
  • the chopper may be employed as a power factor correction circuit.
  • Such a semiconductor switching device has a semiconductor element (for example, a switching element or a diode), and is often manufactured as a module in which the semiconductor element is housed in a package in order to realize miniaturization or cost reduction.
  • a semiconductor element for example, a switching element or a diode
  • a resistor (hereinafter referred to as “temperature detection resistor”) may be employed in order to easily realize this.
  • the temperature detection resistor may be a normal resistor (because the resistance value has temperature dependence), but a thermistor (positive characteristic thermistor or negative characteristic thermistor) with higher sensitivity is often employed. .
  • the temperature detection resistor be installed near the semiconductor switching device. Since a temperature change in the temperature detection resistor can be detected as a temperature change in the resistance value of the temperature detection resistor, a current is supplied to the temperature detection resistor to detect a voltage drop in the temperature detection resistor.
  • Patent Document 1 Such a temperature detection technique is described in Patent Document 1.
  • a temperature detection resistor is provided at a terminal of an inverter.
  • a predetermined constant may be added to the detected temperature in order to estimate the temperature of the switching element from the detected temperature.
  • the difference between the detected temperature and the estimated temperature is not actually constant and depends on the amount of heat generated by the semiconductor element. Therefore, such an estimation method has low temperature estimation accuracy.
  • an object of the present invention is to provide a temperature estimation device that can improve the estimation accuracy of the temperature of a semiconductor element.
  • a first aspect of the temperature estimation apparatus is an apparatus for estimating an element temperature of a semiconductor element (10, Q1 to Q6) housed in a semiconductor module (1), and is a first apparatus separated from the semiconductor element.
  • a first temperature detector (31) provided at one position
  • a second temperature detector (32) provided at a second position different from the first position, the element temperature, and a first temperature at the first position.
  • a storage unit (41) in which a relationship between a first temperature difference between (TH1) and a second temperature difference between the first temperature and the second temperature (TH2) at the second position is recorded in advance.
  • a temperature estimation unit (40) for estimating the element temperature based on the first temperature detected by the first temperature detection unit, the second temperature detected by the second temperature detection unit, and the relationship. ).
  • a second aspect of the temperature estimation apparatus is the temperature estimation apparatus according to the first aspect, in which the semiconductor module (1) is interposed between the semiconductor element (10, Q1 to Q6) and a metal conductor. It has a terminal (11) to be connected, and the first temperature detector (31) detects the temperature of the terminal or the surface temperature of the semiconductor module.
  • a third aspect of the temperature estimation apparatus is the temperature estimation apparatus according to the first or second aspect, wherein the semiconductor module (1) is provided on a substrate (2), and the second temperature detection is performed.
  • the unit (32) is provided on the substrate and detects the temperature of the substrate.
  • the 4th aspect of the temperature estimation apparatus concerning this invention is a temperature estimation apparatus concerning the 1st or 2nd aspect, Comprising: The cooling part (5) which cools the said semiconductor module (1) is further included, The second temperature detection unit (32) detects the temperature of the cooling unit.
  • the 5th aspect of the temperature estimation apparatus concerning this invention is a temperature estimation apparatus concerning the 1st or 2nd aspect, Comprising: The cooling part which transfers the heat
  • a sixth aspect of the temperature estimation device is the temperature estimation device according to the first or second aspect, wherein the semiconductor module (1) is a resin portion that covers the semiconductor elements (10, Q1 to Q6).
  • the first temperature detector (31) detects the temperature inside the resin part.
  • a first aspect of a semiconductor device includes the temperature estimation device according to any one of the first to sixth aspects and the semiconductor module (1).
  • the element temperature is estimated according to the heat generation amount of the semiconductor element. it can.
  • the metal conductor has a low thermal conductivity, and therefore, the temperature of the portion that is thermally close to the semiconductor element is detected. Therefore, the temperature estimation accuracy can be improved.
  • the second temperature detection unit is provided on the substrate. Therefore, the second temperature detection unit can be easily attached.
  • the temperature detection unit is provided in the cooling unit to which most of the heat from the semiconductor module is transmitted. Therefore, the temperature estimation accuracy based on the heat generation amount of the semiconductor element can be improved.
  • the temperature estimation device of the present invention most of the heat from the semiconductor module is transferred to the heat medium via the cooling unit, so that the temperature estimation accuracy can be improved.
  • the temperature is detected at a position close to the semiconductor element, so that the temperature estimation accuracy can be improved.
  • FIG. 1 is a diagram showing a conceptual configuration of the temperature estimation device 4.
  • the semiconductor element 10 that is the target of temperature estimation is housed in the semiconductor module 1.
  • the semiconductor module 1 is an inverter module, for example, and the semiconductor element 10 is a switching element, for example.
  • FIG. 2 illustrates a circuit configuration of the inverter module 1.
  • the inverter module 1 includes switching elements Q1 to Q6 as an example of the semiconductor element 10.
  • the inverter module 1 receives the DC voltage Vdc between the DC power supply lines L1 and L2, and converts the DC voltage Vdc into three-phase AC voltages Vu, Vv, and Vw by switching the switching elements Q1 to Q6. In such a conversion operation, a current flows through the semiconductor element 10 (switching elements Q1 to Q6), whereby the semiconductor element 10 generates heat.
  • the semiconductor module 1 is attached to the substrate 2, for example. More specifically, the semiconductor module 1 has a terminal 11 connected to the semiconductor element 10 via a metal conductor (not shown), and the terminal 11 is electrically connected to the substrate 2 by, for example, soldering.
  • the terminals 11 are electrically connected to connection portions (pads) 21 provided on the substrate 2 in a state of penetrating the substrate 2.
  • the semiconductor module 1 in which the terminal 11 penetrates the substrate 2 is a kind of so-called insertion type electronic component.
  • the semiconductor module 1 is not limited to the insertion type electronic component, and may be a surface mounting type electronic component in which the terminal 11 does not penetrate the substrate 2.
  • a cooling unit 5 is provided.
  • the cooling unit 5 is a heat sink, for example, and cools the semiconductor module 1.
  • the cooling unit 5 is in direct contact with the semiconductor module 1.
  • the cooling unit 5 cools the semiconductor module 1 by receiving heat from the semiconductor module 1 and radiating it to a heat medium (air in the example of FIG. 1).
  • the cooling unit 5 since the cooling unit 5 is provided, the heat from the semiconductor module 1 is mainly transmitted to the cooling unit 5 and secondarily to the substrate 2.
  • the heat transfer from the semiconductor element 10 to the cooling unit 5 is indicated by a broken line arrow, and the heat transfer from the semiconductor element 10 to the substrate 2 is indicated by a dashed line arrow.
  • the cooling unit 5 is not necessarily provided.
  • the temperature estimation device 4 includes two temperature detection units 31 and 32, a temperature estimation unit 40, and a storage unit 41.
  • the temperature detection unit 31 includes a resistor 311 and a temperature detection resistor 312 as shown in FIG.
  • the resistor 311 and the temperature detection resistor 312 are connected in series with each other, and a DC power supply is connected to these series bodies.
  • the resistor 311 is provided on the higher potential side than the temperature detection resistor 312.
  • Such a resistor 311 functions as a so-called pull-up resistor.
  • the temperature detection resistor 312 is a so-called thermistor, and its resistance value changes relatively greatly depending on the temperature.
  • the voltage across the resistor 311 or the temperature detection resistor 312 varies depending on the temperature.
  • the voltage across the temperature detection resistor 312 is output to the temperature estimation unit 40.
  • the temperature estimation unit 40 recognizes the temperature detected by the temperature detection unit 31 based on the voltage at both ends.
  • the voltage between both ends is input to the temperature estimation unit 40 via the AD conversion unit 42.
  • the AD conversion unit 42 is a conversion unit that converts analog data into digital data.
  • the temperature detection unit 32 also includes a resistor 321 and a temperature detection resistor 322, and the temperature estimation device 4 includes an AD conversion unit 43. These function in the same manner as the resistor 311, the temperature detection resistor 312, and the AD converter 42, respectively, so that repeated description is avoided.
  • the temperature detector 31 is provided at a first position away from the semiconductor element 10 and detects its temperature TH1.
  • the temperature detection unit 31 is provided in the connection unit 21.
  • the terminal 11 and the connection portion 21 are usually formed of metal and are in contact with each other directly or through solder 91 that is an alloy, so the temperature of the terminal 11 and the temperature of the connection portion 21 are substantially equal to each other. Therefore, it can be understood that the temperature detection unit 31 detects the temperature of the terminal 11.
  • the temperature detector 32 is provided at a second position different from the first position, and detects the temperature TH2.
  • the temperature detection unit 32 is provided on the substrate 2.
  • the distance between the semiconductor module 1 and the temperature detection unit 31 is longer than the distance between the semiconductor module 1 and the temperature detection unit 32.
  • the storage unit 41 is, for example, a nonvolatile recording medium.
  • the storage unit 41 records the relationship between the temperature difference ⁇ T1 between the temperature TH1 and the element temperature TE of the semiconductor element 10 and the temperature difference ⁇ T2 between the temperatures TH1 and TH2.
  • Such a relationship can be determined in advance by experiment or simulation.
  • a temperature detection unit that directly measures the element temperature TE of the semiconductor element 10 is provided for one of the actual products, and the ambient temperature or cooling is further changed while changing the load (for example, current value) to the semiconductor module 1.
  • the temperatures TH1 and TH2 may be detected while changing the airflow to the unit 5.
  • the actual product is not provided with a temperature detection unit that detects the element temperature TE.
  • the temperature estimation unit 40 calculates the element temperature TE based on the temperatures TH1 and TH2 detected by the temperature detection units 31 and 32 and the function K (TH1-TH2) recorded in the storage unit 41. More specifically, the element temperature TE is calculated based on the equation (2).
  • the temperature estimation unit 40 includes a microcomputer and a storage device.
  • the microcomputer executes each processing step (in other words, a procedure) described in the program.
  • the storage device is composed of one or more of various storage devices such as a ROM (Read Only Memory), a RAM (Random Access Memory), a rewritable nonvolatile memory (EPROM (Erasable Programmable ROM), etc.), and a hard disk device, for example. Is possible.
  • the storage device stores various information, data, and the like, stores a program executed by the microcomputer, and provides a work area for executing the program. It can be understood that the microcomputer functions as various means corresponding to each processing step described in the program, or can realize that various functions corresponding to each processing step are realized.
  • the temperature estimation unit 40 is not limited to this, and various procedures executed by the temperature estimation unit 40 or various means or various functions implemented may be realized by hardware.
  • the temperature estimation unit 40 estimates the element temperature TE of the semiconductor element 10 using the temperatures TH1 and TH2 detected by the two temperature detection units 31 and 32. Thereby, the estimation accuracy of the element temperature TE can be improved as compared with the case where the element temperature TE is estimated using only one temperature TH1.
  • the element temperature TE is the sum of the temperature TH1 and the temperature difference ⁇ T1.
  • the temperature difference ⁇ T1 depends on the amount of heat generated by the semiconductor element 10 and does not depend on the ambient temperature.
  • the temperature TH1 increases according to the amount of heat generated by the semiconductor element 10, but also varies depending on the ambient temperature. Therefore, the relationship between the temperature difference ⁇ T1 and the temperature TH1 is not uniquely determined for any ambient temperature. Therefore, it is difficult to estimate the temperature difference ⁇ T1 from only the temperature TH1, and it is difficult to estimate the element temperature TE1.
  • the element temperature TE can be estimated while suppressing the influence of ambient temperature fluctuations, and the estimation accuracy of the element temperature TE can be improved.
  • the temperature detectors 31 and 32 may be provided so that the above relationship is a proportional relationship.
  • the first position and the second position can also be determined in advance by experiment or simulation, for example. For example, for one of the actual products, a temperature detection unit that directly measures the element temperature TE of the semiconductor element 10 is provided, and the temperature TH1, while changing the ambient temperature while changing the load on the semiconductor module 1 What is necessary is just to detect TH2. Then, the first position and the second position at which the relationship between the temperature differences ⁇ T1 and ⁇ T2 becomes a proportional relationship regardless of the ambient temperature are specified.
  • the proportionality coefficient k in the proportional relationship between the temperature differences ⁇ T1 and ⁇ T2 can also be calculated by the experiment.
  • the proportional coefficient k is recorded in the storage unit 41 in advance.
  • the temperature estimation unit 40 calculates the element temperature TE based on the temperatures TH1 and TH2 detected by the temperature detection units 31 and 32 and the proportionality coefficient k recorded in the storage unit 41. More specifically, the element temperature TE is calculated based on the formula (3).
  • the arithmetic processing can be simplified, and the storage capacity of the storage unit 41 can be reduced.
  • the temperature difference ⁇ T1 and the temperature difference ⁇ T2 are proportional.
  • the temperature detection unit 31 detects the temperature of the terminal 11.
  • the metal conductor has a high thermal conductivity, so that the terminal 11 is thermally close to the semiconductor element 10. Therefore, the temperature difference ⁇ T1 between the element temperature TE and the temperature TH1 is small. Therefore, the estimation accuracy of the element temperature TE can be improved as compared with the case where the temperature TH1 is detected at a position farther from the semiconductor module 1 than the terminal 11.
  • the temperature detection unit 32 is provided on the substrate 2. Therefore, the temperature detection unit 32 can be easily attached.
  • the temperature detection resistor 322 can be easily attached to the substrate 2.
  • the temperature detection unit 4 is different from the temperature estimation device 4 of FIG. 1 in that the temperature detection unit 4 is positioned.
  • the temperature detection unit 31 is provided on the surface of the semiconductor module 1. Even in this case, since the temperature detection unit 31 detects the temperature near the semiconductor element 10, the element temperature TE is estimated as compared with the case where the temperature detection unit 31 detects the temperature at a position far away from the semiconductor module 1. Accuracy can be improved.
  • the temperature detection unit 32 detects the temperature of the cooling unit 5. According to this, the temperature detection part 32 will be provided in the path
  • the temperature detection unit 32 detects the temperature of a heat medium (air in the example of FIG. 6) that receives heat from the cooling unit 5.
  • the heat medium may be water regardless of the illustration of FIG.
  • the refrigerant flowing through the refrigerant circuit may be employed as the heat medium of the cooling unit 5. Heat from the semiconductor module 1 is transmitted to the heat medium mainly through the cooling unit 5. Therefore, the estimation accuracy of the element temperature TE can be improved as compared with the temperature estimation device 4 of FIG. 4 in which the temperature detection unit 32 is provided on the substrate 2 to which heat from the semiconductor module 1 is transmitted secondarily. .
  • the semiconductor module 1 has a resin part that covers the semiconductor element 10, and the temperature detection part 31 is provided inside the resin part.
  • the temperature detection unit 32 is provided on the surface of the semiconductor module 1. In this case, since both of the temperature detection units 31 and 32 are provided at positions close to the semiconductor element 10, both of the temperature detection units 31 and 32 are provided at positions far from the semiconductor module 1 in the substrate 2. Compared to the case, the estimation accuracy of the element temperature TE can be improved.
  • the case where the temperature detection unit 31 is closer to the semiconductor element 10 than the temperature detection unit 32 is shown.
  • the case where the temperature TH1 is higher than the temperature TH2 is shown.
  • the present invention is not limited to this, and the temperature TH1 may be lower than the temperature TH2.
  • the positions of the temperature detectors 31 and 32 may be reversed.
  • the element temperature TE can be calculated using the equations (1) and (3).
  • equation (3) the proportionality coefficient k takes a negative value.
  • a determination unit may be provided that determines that the semiconductor element 10 is in an overheated state when the element temperature TE estimated as described above exceeds a predetermined reference value Tref.
  • the semiconductor module 1 for example, the switching elements Q1 to Q6
  • the semiconductor module 1 is controlled to reduce the current flowing to the semiconductor element 10, or the power supply to the semiconductor module 1 is used. What is necessary is just to cut off supply. This is realized by a control unit or the like that controls the semiconductor module 1. Thereby, the element temperature TE of the semiconductor element 10 can be reduced and an overheating state can be avoided.
  • the temperature range in which the semiconductor module 1 can normally operate can be improved as compared with the conventional case as will be described in detail below.
  • the element temperature TE is estimated by adding a predetermined value to the temperature TH1
  • the current flowing to the semiconductor module 1 is reduced (or cut off) when the element temperature TE exceeds the reference value Tref
  • the estimated element temperature TE is estimated to be higher in advance. Therefore, in such a control method, it is determined that an overheated state is present even in an originally operable region, and the current is reduced.
  • the element temperature TE can be estimated with high accuracy in this embodiment, the temperature range in which normal operation can be performed can be improved.
  • the first position and the second position are provided on one heat transfer path among a plurality of heat transfer paths from the semiconductor module 1 (broken line arrows and one-dotted line arrows) as shown in FIGS. It is desirable.
  • the first position and the second position are provided in different heat transfer paths, if the ambient temperature in one heat transfer path changes to be different from the ambient temperature in the other heat transfer path, the temperature difference ⁇ T1, ⁇ T2 The relationship can change.
  • the first position and the second position are provided in the same heat transfer path, it is not affected by the change in the relationship, so that the accuracy of the estimated temperature can be improved.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)

Abstract

La présente invention concerne un dispositif d'estimation de température permettant d'améliorer la précision d'estimation de la température d'un semi-conducteur. Une première unité (31) de détection de température est prévue dans une première position séparée par rapport à un élément semiconducteur (10). Une seconde unité (32) de détection de température est prévue dans une seconde position, différente de la première position. La relation entre une première différence de température, entre la température de l'élément semiconducteur (10) et une première température dans la première position, et un seconde différence de température, entre la première température et une seconde température dans la seconde position, est préenregistrée dans une unité à mémoire (41). Une unité (40) d'estimation de température estime la température de l'élément sur la base de la première température détectée par la première unité de détection de température (31), de la seconde température détectée par la seconde unité de détection de température (32), et de la relation enregistrée dans l'unité à mémoire (41).
PCT/JP2013/083227 2013-02-21 2013-12-11 Dispositif d'estimation de température et dispositif semiconducteur WO2014129052A1 (fr)

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JP2013031877A JP2014163679A (ja) 2013-02-21 2013-02-21 温度推定装置および半導体装置
JP2013-031877 2013-02-21

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Cited By (1)

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WO2016039342A1 (fr) * 2014-09-09 2016-03-17 富士電機株式会社 Module semiconducteur

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Publication number Priority date Publication date Assignee Title
JP6402567B2 (ja) 2014-10-03 2018-10-10 セイコーエプソン株式会社 回路装置及び電子機器
JP6569286B2 (ja) * 2015-04-28 2019-09-04 株式会社デンソー 電池温度推定装置
JP6569447B2 (ja) * 2015-10-07 2019-09-04 株式会社デンソー 電動機制御装置
JP2018198533A (ja) * 2018-09-11 2018-12-13 セイコーエプソン株式会社 回路装置及び電子機器

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JPH09211266A (ja) * 1996-01-30 1997-08-15 Hitachi Ltd 半導体装置及び光通信モジュール
JP2003021550A (ja) * 2001-07-06 2003-01-24 Yamatake Corp トルクチューブ式計測計の温度補償装置
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JPWO2016039342A1 (ja) * 2014-09-09 2017-04-27 富士電機株式会社 半導体モジュール
US10020297B2 (en) 2014-09-09 2018-07-10 Fuji Electric Co., Ltd. Semiconductor module

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