WO2014108039A1 - Procédé d'exposition permettant de réduire une défocalisation d'exposition dans une zone de bord d'une tranche et processus photolithographique - Google Patents

Procédé d'exposition permettant de réduire une défocalisation d'exposition dans une zone de bord d'une tranche et processus photolithographique Download PDF

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Publication number
WO2014108039A1
WO2014108039A1 PCT/CN2013/091228 CN2013091228W WO2014108039A1 WO 2014108039 A1 WO2014108039 A1 WO 2014108039A1 CN 2013091228 W CN2013091228 W CN 2013091228W WO 2014108039 A1 WO2014108039 A1 WO 2014108039A1
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Prior art keywords
exposure
wafer
focal length
energy
edge area
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PCT/CN2013/091228
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English (en)
Chinese (zh)
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王辉
黄兆兴
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无锡华润上华科技有限公司
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Publication of WO2014108039A1 publication Critical patent/WO2014108039A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing

Definitions

  • the present invention relates to the field of semiconductor chip fabrication, and more particularly to an exposure method and a photolithography process for reducing exposure and defocusing of an edge region of a wafer.
  • the lithography process is one of the most important process steps in chip manufacturing. Its main function is to copy the pattern on the mask onto the silicon wafer for the next step of etching or ion implantation. Ready.
  • the exposure process is the most important step in the lithography process. It uses ultraviolet light to image the pattern on the reticle to the surface of the wafer, thereby transferring the pattern on the reticle to the photoresist on the surface of the wafer. Energy and imaging focus shifts are especially important.
  • the wafer center photoresist may have a normal shape, but the photoresist in the edge region of the wafer has an inverted trapezoidal problem, resulting in a wafer.
  • Defocusing of the edges as shown in Figure 1. Defocusing at the edge of the wafer can adversely affect the exposure process of the wafer, especially at critical levels such as polysilicon gates, metal layers, etc., resulting in yield loss.
  • the current solution is mainly to optimize the uniformity of the lithography machine; to make process changes; to replace new lithography and the like.
  • a wafer edge exposure module and a wafer edge exposure method are disclosed in Chinese Patent Application Publication No. CN102147572A.
  • the wafer edge exposure module includes a wafer rotating device, an optical system, a scanner interface module, and a controller.
  • the optical system simultaneously directs an exposure light to an edge portion of the wafer to create a dummy pattern on the edge of the wafer, the scanning interface module transmitting and/or accepting a false edge exposure from a scanner over a computer network Information, the controller receives the pseudo edge exposure information from the scanner interface module and controls the optical system using the pseudo edge exposure information. This method requires updating the hardware and increasing the cost.
  • a method of eliminating pattern defects in the edge regions of semiconductor wafers is disclosed in Chinese Patent Application Publication No. CN1885159A.
  • the main feature of the method is the addition of a process step of cleaning the edges of the semiconductor wafer with a solvent after the development process step of forming the photoresist pattern, eliminating pattern defects in the edge regions of the semiconductor wafer. This approach adds to the process, which also adds cost and introduces more uncontrollable factors.
  • a disadvantage of the prior art is that if the uniformity of the lithography machine hardware is optimized, the components need to be updated, additional costs are added, and optimization effects are not necessarily achieved; if a more advanced exposure machine is replaced, it is expensive; Making process changes and adding processes increases the cost and introduces more uncontrollable factors. If a newer photoresist is used, a large amount of window verification is required, and the verification cycle is long. Summary of the invention
  • the object of the present invention is to solve the problem of wafer edge exposure defocusing only by optimizing the photolithography process under the original machine and process conditions.
  • An exposure method for reducing exposure defocusing of an edge region of a wafer characterized in that: during exposure of the wafer, adjusting exposure energy and focal length of a central region of the wafer and an edge region of the wafer, and reducing exposure energy of the edge region of the wafer When small, the exposure focal length of the edge region of the wafer is adjusted in the positive direction.
  • the exposure energy of the central region of the wafer is different from the exposure energy of the edge region of the wafer. Further, the exposure energy of the central region of the wafer is greater than the exposure energy of the edge region of the wafer.
  • the exposure energy of the wafer edge region is 30 to 29. 9 mJ.
  • the exposure energy of the central region of the wafer is 30. 4 mJ
  • the exposure energy of the edge region of the wafer For 29. 4m Jo
  • the exposure focal length of the wafer edge region is different from the exposure focal length of the wafer center region. Further, the exposure focal length of the edge region of the wafer is more positive than the exposure focal length of the central region of the wafer.
  • the exposure focal length of the wafer edge region is -0. 3 ⁇ - 0. 1, the exposure focal length of the edge region of the wafer is -0. 2 ⁇ 0.
  • the exposure focal length of the wafer center region is -0.2
  • the exposure focal length of the wafer edge region is -0.1.
  • the exposure method is applied to a fabrication process of a polysilicon gate.
  • the exposure method is used for the production process of the metal layer.
  • the invention also provides an exposure method for reducing exposure defocusing of an edge region of a wafer, characterized in that: during exposure of the wafer, the exposure energy and the exposure focal length of the central region of the wafer are kept unchanged, and only the edge of the wafer is adjusted. The exposure energy of the area and the exposure focal length.
  • the exposure energy of the edge region of the wafer is reduced while the exposure focal length of the edge region of the wafer is adjusted in the positive direction.
  • the exposure energy of the edge region of the wafer is 29 to 30 mJ, and the focal length is -0.15 to 0.
  • the exposure energy of the edge region of the wafer is 29. 4 mJ, and the focal length is -0.1.
  • the present invention also provides a photolithography process capable of reducing exposure defocusing in the edge region of the wafer, including the following steps:
  • the invention has the advantages that the process of defocusing the edge of the wafer can be solved only by optimizing the lithography process without updating the advanced machine and without changing the photoresist. Increase wafer yield, short verification cycle, and no additional cost.
  • Figure 1 is a comparison of the morphology of the photoresist in the edge of the wafer edge and the morphology of the photoresist in the normal area of the wafer.
  • Fig. 2 shows a flow chart of an exposure process in an embodiment of the present invention.
  • a photoresist that is, a photoresist is coated on the wafer, such as step 101 in FIG. 1.
  • the material composition of the photoresist may be polyvinyl cinnamate (KPR), poly-cinnamonate malonic acid.
  • KPR polyvinyl cinnamate
  • OMR-83 glue cyclized rubber type rubber
  • diazonaphthoquinone sulfonyl chloride are ultraviolet positive resists (AZ-1350) of the main body of the sensitizer.
  • the exposure process is carried out on the wafer, and the two most important parameters, the exposure, are adjusted during the exposure process. Energy and focal length, and the adjustment should be appropriate. The exposure energy and the exposure focal length of the wafer center area and the edge area are simultaneously adjusted.
  • the main idea of the adjustment is to adjust the exposure focal length of the edge area of the wafer to the positive direction (the positive direction here is to adjust to the positive direction with reference to the zero point, such as adjusting the focal length from -0.2 to -0.1.
  • the positive direction here is to adjust to the positive direction with reference to the zero point, such as adjusting the focal length from -0.2 to -0.1.
  • It can reduce the inverted trapezoidal phenomenon of the photoresist, but it will cause the critical dimension (CD) of the single wire (ISO) to become smaller, so at the same time, the exposure of the edge region of the wafer is required.
  • the energy is reduced to compensate for variations in critical dimensions due to focus correction.
  • step 102 of Figure 1 the critical dimension of the single wire
  • the amount of adjustment per step is 0. lmj, and in the process of adjusting the exposure focal length, the adjustment amount of each step is 0.01, and then exposure is performed, as in step 103 in FIG.
  • the quality of the exposed image can be viewed by development, as in step 104 of Figure 1. If the quality is not ideal, adjust it again. Therefore, the step 102 of adjusting the exposure conditions and the process 103 of the exposure are a continuous process until the optimum exposure conditions are reached.
  • the exposure conditions are as follows: The exposure energy for the central region of the wafer is 30.4 mJ, and the exposure energy for the edge region of the wafer is 29.4 mJ, and the exposure focal length of the center region of the wafer is -0. 2 ⁇ The edge area of the wafer exposure focal length is -0.1. The results of the exposure found that the defocusing of the edge of the wafer was greatly reduced.
  • a photoresist that is, a photoresist is coated on the wafer, and the material composition of the photoresist may be polyvinyl cinnamate (KPR), poly-cinnamon bismuth malonate polyester, The cyclized rubber type rubber (OMR-83 glue) and the diazonaphthoquinone sulfonyl chloride are ultraviolet positive resists (AZ-1350) of the main body of the sensitizer.
  • KPR polyvinyl cinnamate
  • OMR-83 glue cyclized rubber type rubber
  • AZ-1350 ultraviolet positive resists
  • the exposure process is then performed on the wafer, and the two most important parameters, exposure energy and focal length, are adjusted during exposure and the amplitude is adjusted appropriately.
  • the exposure energy and the exposure focal length of the wafer center area and the edge area are simultaneously adjusted. Edge area of the wafer while reducing the exposure energy of the edge region of the wafer
  • the exposure focal length is adjusted in the positive direction.
  • the amount of adjustment per step is 0. lmj, and in the process of adjusting the exposure focal length, the adjustment amount of each step is 0.01.
  • the exposure energy of the central region of the wafer is 30.4 m
  • the exposure energy of the edge region of the wafer is 29.4 mJ
  • the exposure focal length of the central region of the wafer is -0.3
  • the edge region of the wafer The exposure focal length is -0.2. The results of the exposure found that the defocusing of the edge of the wafer was reduced.
  • a photoresist that is, a photoresist is coated on the wafer, and the material composition of the photoresist may be polyvinyl cinnamate (KPR), poly-cinnamon bismuth malonate polyester, The cyclized rubber type rubber (OMR-83 glue) and the diazonaphthoquinone sulfonyl chloride are ultraviolet positive resists (AZ-1350) of the main body of the sensitizer.
  • KPR polyvinyl cinnamate
  • OMR-83 glue cyclized rubber type rubber
  • AZ-1350 ultraviolet positive resists
  • the wafer is then exposed to the exposure process, and the two most important parameters, exposure energy and focal length, are adjusted during exposure and the amplitude is adjusted appropriately.
  • the exposure energy and the exposure focal length of the wafer center area and the edge area are simultaneously adjusted.
  • the exposure focal length of the edge region of the wafer is adjusted in the positive direction while reducing the exposure energy of the edge region of the wafer.
  • the amount of adjustment per step is 0. lmj, and in the process of adjusting the exposure focal length, the adjustment amount of each step is 0.01.
  • the exposure energy for the central region of the wafer is 30. 4 mJ
  • the exposure energy for the edge region of the wafer is 29.4 mJ
  • the exposure focal length of the central region of the wafer is -0.1
  • the edge region of the wafer The exposure focal length is 0.
  • the results of the exposure were found to reduce the defocusing at the edge of the wafer.
  • a photoresist that is, a photoresist is coated on the wafer
  • the material composition of the photoresist may be polyvinyl cinnamate (KPR), poly-cinnamon bismuth malonate polyester,
  • the cyclized rubber type rubber (OMR-83 glue) and the diazonaphthoquinone sulfonyl chloride are ultraviolet positive resists (AZ-1350) of the main body of the sensitizer.
  • the exposure process is then performed on the wafer, and the two most important parameters, exposure energy and focal length, are adjusted during exposure and the amplitude is adjusted appropriately.
  • the exposure energy and the exposure focal length of the wafer center area and the edge area are simultaneously adjusted.
  • the exposure focal length of the edge region of the wafer is adjusted in the positive direction while reducing the exposure energy of the wafer edge region.
  • the amount of adjustment per step is 0. lmj, and in the process of adjusting the exposure focal length, the adjustment amount of each step is 0.01.
  • the exposure energy for the central region of the wafer is 31 mJ
  • the exposure energy for the edge region of the wafer is 29.9 mJ
  • the exposure focal length of the wafer center region is -0.2
  • the edge region of the wafer is exposed. It is -0.1.
  • the results of the exposure were found to reduce the defocusing at the edge of the wafer.
  • Embodiment 5 is a diagrammatic representation of Embodiment 5:
  • a photoresist that is, a photoresist is coated on the wafer, and the material composition of the photoresist may be polyvinyl cinnamate (KPR), poly-cinnamon bismuth malonate polyester, The cyclized rubber type rubber (OMR-83 glue) and the diazonaphthoquinone sulfonyl chloride are ultraviolet positive resists (AZ-1350) of the main body of the sensitizer.
  • KPR polyvinyl cinnamate
  • OMR-83 glue cyclized rubber type rubber
  • AZ-1350 ultraviolet positive resists
  • the wafer is then exposed to the exposure process, and the two most important parameters, exposure energy and focal length, are adjusted during exposure and the amplitude is adjusted appropriately.
  • the exposure energy and the exposure focal length of the wafer center area and the edge area are simultaneously adjusted.
  • the exposure focal length of the edge region of the wafer is adjusted in the positive direction while reducing the exposure energy of the edge region of the wafer.
  • the amount of adjustment per step is 0. lmj, and in the process of adjusting the exposure focal length, the adjustment amount of each step is 0.01.
  • the exposure energy for the center of the wafer is 30 mJ
  • the exposure energy for the edge region of the wafer is 29 mJ
  • the exposure focal length for the center region of the wafer is -0.2
  • the edge of the wafer is exposed to a focal length of - 0. 1.
  • the results of the exposure were found to reduce the defocusing at the edge of the wafer.
  • a photoresist that is, a photoresist is coated on the wafer, and the material composition of the photoresist may be polyvinyl cinnamate (KPR), poly-cinnamon bismuth malonate polyester, The cyclized rubber type rubber (OMR-83 glue) and the diazonaphthoquinone sulfonyl chloride are ultraviolet positive resists (AZ-1350) of the main body of the sensitizer.
  • KPR polyvinyl cinnamate
  • OMR-83 glue cyclized rubber type rubber
  • AZ-1350 ultraviolet positive resists
  • the wafer is then exposed to the exposure process, and the two most important parameters, exposure energy and focal length, are adjusted during exposure and the amplitude is adjusted appropriately. And in the process of adjusting the exposure energy and the focal length of the wafer edge region, the exposure energy and the exposure focal length of the central region of the wafer remain unchanged.
  • the exposure focal length of the edge region of the wafer is adjusted in the positive direction, which can reduce the inverted trapezoidal phenomenon of the photoresist, but the critical dimension (CD) of the single line (ISO) becomes smaller, so the exposure of the edge region of the wafer is also required.
  • the energy is reduced to compensate for variations in critical dimensions due to focus correction.
  • the exposure focal length of the central region of the wafer is -0.2. After a plurality of trial adjustments, the exposure energy for the edge region of the wafer is 29. 4 mJ, and the edge region of the wafer has an exposure focal length of -0.1. The results of the exposure were found to reduce the defocusing of the edge of the wafer.
  • a photoresist that is, a photoresist is coated on the wafer, and the material composition of the photoresist may be polyvinyl cinnamate (KPR), poly-cinnamon bismuth malonate polyester, The cyclized rubber type rubber (OMR-83 glue) and the diazonaphthoquinone sulfonyl chloride are ultraviolet positive resists (AZ-1350) of the main body of the sensitizer.
  • KPR polyvinyl cinnamate
  • OMR-83 glue cyclized rubber type rubber
  • AZ-1350 ultraviolet positive resists
  • the wafer is then exposed to the exposure process, and the two most important parameters, exposure energy and focal length, are adjusted during exposure and the amplitude is adjusted appropriately. And in the process of adjusting the exposure energy and the focal length of the wafer edge region, the exposure energy and the exposure focal length of the central region of the wafer remain unchanged.
  • the exposure focal length of the edge region of the wafer is adjusted in the positive direction, which can reduce the inverted trapezoidal phenomenon of the photoresist, but the critical dimension (CD) of the single-line (ISO) becomes smaller, so the exposure of the edge region of the wafer is also required.
  • the energy is reduced to compensate for variations in critical dimensions due to focus correction. 5 ⁇
  • the exposure of the center of the wafer is 0. 4mJ
  • the exposure focal length of the center of the wafer is -0.2.
  • the exposure energy for the edge region of the wafer is 30 mJ
  • the edge region of the wafer has an exposure focal length of -0.15. The results of the exposure were found to reduce the defocusing at the edge of the wafer.
  • Embodiment 8 is a diagrammatic representation of Embodiment 8
  • a photoresist that is, a photoresist is coated on the wafer, and the material composition of the photoresist may be polyvinyl cinnamate (KPR), poly-cinnamon bismuth malonate polyester, The cyclized rubber type rubber (OMR-83 glue) and the diazonaphthoquinone sulfonyl chloride are ultraviolet positive resists (AZ-1350) of the main body of the sensitizer.
  • KPR polyvinyl cinnamate
  • OMR-83 glue cyclized rubber type rubber
  • AZ-1350 ultraviolet positive resists
  • the wafer is then exposed to the exposure process, and the two most important parameters, exposure energy and focal length, are adjusted during exposure and the amplitude is adjusted appropriately. And in the process of adjusting the edge exposure energy and the focal length of the wafer, the exposure energy and the exposure focal length of the central region of the wafer remain unchanged.
  • the exposure focal length of the edge of the wafer is adjusted in the positive direction, which can reduce the inverted trapezoidal phenomenon of the photoresist, but the critical dimension (CD) of the single-line (ISO) becomes smaller, so the exposure energy at the edge of the wafer is reduced at the same time. Small to compensate for changes in critical dimensions due to focus correction.
  • the exposure energy and exposure focal length of the central region of the wafer remain unchanged.
  • the exposure focal length of the central region of the wafer is -0.2.
  • the exposure energy for the edge region of the wafer was 29 mJ, and the edge region of the wafer was exposed to a focal length of zero. The results of the exposure were found to reduce the defocusing at the edge of the wafer.
  • Embodiment 9 is a diagrammatic representation of Embodiment 9:
  • a lithography process comprising the following steps:
  • Pretreatment The purpose is to change the properties of the wafer surface so that it can adhere firmly to the photoresist.
  • the main method is to apply DS (hexamethyldisilazide), which is heated to 120 ° C under the wafer in a closed cavity, and sprayed with nitrogen gas to spray the ⁇ DS, so that the surface of the wafer and the surface of the wafer -0H health reaction has been removed Remove the water vapor and hydrophilic structure, and cool down on a 23 ° C cold plate after the reaction is sufficient.
  • DS hexamethyldisilazide
  • Soft baking the purpose is to remove the solvent in the photoresist, which is done in a hot plate at 90 °C.
  • Exposure The exposure process is performed on the wafer, and the two most important parameters, exposure energy and focal length, are adjusted. The exposure energy and the exposure focal length of the wafer center area and the edge area are simultaneously adjusted.
  • the amount of adjustment per step is 0. lmj, and in the process of adjusting the exposure focal length, the adjustment amount of each step is 0.01.
  • the exposure energy of the center of the wafer is 30. 4 mJ
  • the exposure energy of the edge region of the wafer is 29.4 MJ
  • the exposure focal length of the center area of the wafer is -0.2, the edge of the wafer.
  • the area exposure focal length is -0.1.
  • this step mainly controls the temperature and time, the temperature uniformity is very high, and the temperature deviation in the hot plate is usually required to be less than 0.3 ° C.
  • the photolithography process is basically completed, but it is also tested before being sent to the next process, mainly to detect the presence or absence of defocus, pattern collapse, abnormal particles, scratches, etc., as well as line width measurement and The measurement of register accuracy.
  • a lithography process comprising the following steps:
  • Pretreatment The purpose is to change the properties of the wafer surface so that it can adhere firmly to the photoresist.
  • the main method is to apply DS (hexamethyldisilazide), which is heated to 120 ° C under the wafer in a closed cavity, and sprayed with nitrogen gas to spray the ⁇ DS, so that the surface of the wafer and the surface of the wafer -0H health reaction has been removed Remove the water vapor and hydrophilic structure, and cool down on a 23 ° C cold plate after the reaction is sufficient.
  • DS hexamethyldisilazide
  • Soft baking the purpose is to remove the solvent in the photoresist, which is done in a hot plate at 90 °C.
  • Exposure The exposure process is performed on the wafer, and the two most important parameters, exposure energy and focal length, are adjusted. The exposure energy and the exposure focal length of the wafer center area and the edge area are simultaneously adjusted.
  • the amount of adjustment per step is 0. lmj, and in the process of adjusting the exposure focal length, the adjustment amount of each step is 0.01.
  • the exposure energy for the central region of the wafer is 31 mJ
  • the exposure energy for the edge region of the wafer is 29.9 MJ
  • the exposure focal length of the wafer center region is -0.2
  • the edge region of the wafer is exposed.
  • the focal length is -0.1.
  • this step mainly controls the temperature and time, the temperature uniformity is very high, and the temperature deviation in the hot plate is usually required to be less than 0.3 ° C.
  • Embodiment 11 is a diagrammatic representation of Embodiment 11:
  • a lithography process comprising the following steps:
  • Pretreatment The purpose is to change the properties of the wafer surface so that it can adhere firmly to the photoresist.
  • the main method is to apply DS (hexamethyldisilazide), which is heated to 120 ° C under the wafer in a closed cavity, and sprayed with nitrogen gas to spray the ⁇ DS, so that the surface of the wafer and the surface of the wafer.
  • DS hexamethyldisilazide
  • Soft baking the purpose is to remove the solvent in the photoresist, which is done in a hot plate at 90 °C.
  • Exposure The exposure process is performed on the wafer, and the two most important parameters, exposure energy and focal length, are adjusted. And the exposure energy and focal length of the central area of the wafer are kept constant, and only the exposure energy and focal length of the edge region of the wafer are adjusted.
  • the exposure of the center of the wafer is 30. 4mJ, the focal length of the center of the wafer is -0.2.
  • the amount of adjustment per step is 0. lmj
  • the adjustment amount of each step is 0.01.
  • the exposure energy for the edge region of the wafer is 29. 4 mJ, and the edge region of the wafer has an exposure focal length of -0.1.
  • this step mainly controls the temperature and time, the temperature uniformity is very high, and the temperature deviation in the hot plate is usually required to be less than 0.3 ° C.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

La présente invention concerne un procédé d'exposition permettant de réduire une défocalisation d'exposition dans une zone de bord d'une tranche. Le procédé d'exposition comprend les étapes consistant à : maintenir une énergie d'exposition et une longueur focale dans la zone centrale d'une tranche ; ajuster l'énergie d'exposition et la longueur focale de la zone de bord de la tranche, et ajuster en particulier, en cours d'exposition, la longueur focale d'exposition de la zone de bord de la tranche vers une direction positive, ce qui réduit l'énergie d'exposition. La présente invention concerne également un processus photolithographique intégrant le procédé d'exposition. L'ajustement de la longueur focale et de l'énergie d'un bord d'une tranche en cours d'exposition permet de régler le problème de la défocalisation d'exposition sur un bord de tranche simplement en optimisant le processus photolithographique, sans actualiser une machine évoluée ni remplacer une photoréserve, ce qui permet de raccourcir la période de validation et n'implique aucun coût supplémentaire.
PCT/CN2013/091228 2013-01-11 2013-12-31 Procédé d'exposition permettant de réduire une défocalisation d'exposition dans une zone de bord d'une tranche et processus photolithographique WO2014108039A1 (fr)

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CN201310011428.1A CN103076722B (zh) 2013-01-11 2013-01-11 一种用于减少晶片边缘区域曝光散焦的曝光方法及光刻工艺
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CN103076722B (zh) * 2013-01-11 2016-03-09 无锡华润上华科技有限公司 一种用于减少晶片边缘区域曝光散焦的曝光方法及光刻工艺
CN103645609B (zh) * 2013-11-08 2015-09-30 上海华力微电子有限公司 一种改善光刻胶形貌的方法
CN109962026B (zh) * 2017-12-26 2022-04-19 无锡华润上华科技有限公司 一种晶圆的预处理方法及光刻方法
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