WO2014075546A1 - 悬空式光波导及其制备方法 - Google Patents

悬空式光波导及其制备方法 Download PDF

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Publication number
WO2014075546A1
WO2014075546A1 PCT/CN2013/086043 CN2013086043W WO2014075546A1 WO 2014075546 A1 WO2014075546 A1 WO 2014075546A1 CN 2013086043 W CN2013086043 W CN 2013086043W WO 2014075546 A1 WO2014075546 A1 WO 2014075546A1
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optical waveguide
suspended
etching
lattice damage
preparing
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PCT/CN2013/086043
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English (en)
French (fr)
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姜潇潇
司光远
吕江涛
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东北大学
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Publication of WO2014075546A1 publication Critical patent/WO2014075546A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/121—Channel; buried or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
    • G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded

Definitions

  • the present invention relates to the field of optical functional devices, and in particular to a suspended optical waveguide and a method for fabricating the same. Background technique
  • Lithium niobate (LiNb0 3 ) crystal as a kind of nonlinear optical material, has a wide range of applications. It is called a versatile optoelectronic material, with its excellent nonlinear optical effect, electro-optical effect, piezoelectric effect and photo-folding. Variable effects are widely used in the preparation of lasers for electro-optic Q-switched components, laser frequency multipliers, optical switches, optical parametric amplifiers, high-frequency broadband filters, ultra-large-capacity memory devices, and integrated optical modulators. They are widely used in military and civilian applications. the use of. For example, electro-optic effect refers to the effect of a change in the refractive index of a crystal when an electric field is applied to a crystal.
  • the electro-optic modulator is made by the principle that the refractive index of the crystal is changed by the electric field:
  • the electro-optical crystal is located between the polarizer and the analyzer, and the polarizer and the detector are not applied when an electric field is applied.
  • the polar mirrors are perpendicular to each other, and the natural light passes through the polarizer and is blocked by the analyzer.
  • the light body changes, and the natural light can pass through the analyzer; the intensity of the light passing through the analyzer is applied to The magnitude of the voltage on the electro-optic crystal is determined, so that the purpose of modulating the intensity of the light by the control voltage can be achieved; and the lithium niobate crystal acts as a material having an electro-optical effect, and functions as a light modulation in the optical communication and is widely used.
  • Lithium niobate crystals are also widely used for doubling of wavelengths above 1000 nm and optical parametric amplification of 1064 nm pump light, and can also be used for quasi-phase matching. Meanwhile, lithium niobate crystals are also widely used in photoelectric regulators and light. a waveguide material; and a lithium niobate crystal doped with a certain amount of iron and other metal impurities, which can be used as a holographic recording medium material; in addition, lithium niobate crystal can also be used for a phase adjuster, a phase grating adjuster, and a large scale Integrated optical system and infrared detector, high frequency wide band In optical devices such as filters.
  • an optical waveguide based on lithium niobate crystal is usually prepared by a proton exchange method or a titanium diffusion method.
  • FIG. la The flow diagrams for preparing the planar optical waveguide 12 and the tunnel type optical waveguide 13 in a lithium niobate crystal using a proton exchange method are shown in Figs. la and lb.
  • the lithium niobate crystal 11 is immersed in the proton source 21 composed of an organic acid solution, proton exchange occurs under certain reaction conditions (temperature, solution concentration, etc.), and the exchange process can be as follows Ionic reaction formula:
  • H + is mainly present in the form of two functional groups of hydrogen bond OH and free OH.
  • the degree of proton exchange depends mainly on the time of the reaction and the temperature.
  • For the formation of the waveguide only partial exchange is required, ie 0 ⁇ ⁇ ⁇ 1.
  • a metal mask 22 can be placed over the lithium niobate crystal 11 to cover a specific region of the surface of the lithium niobate crystal 11, so that proton exchange does not occur in these covered regions.
  • the tunnel type optical waveguide 13 can be formed by selective proton exchange.
  • FIG. 2a and FIG. 2b are schematic diagrams showing the preparation of the flat-plate optical waveguide 12 and the tunnel-type optical waveguide 13 in the lithium niobate crystal using the titanium diffusion method;
  • the material composition of a certain region on the surface of the lithium niobate crystal is changed by the implantation of the titanium ion 31, thereby changing the refractive index of the region and further forming a refractive index difference with the substrate, thereby constituting the optical waveguide.
  • the difference in the refractive index of the waveguide layer and the cladding layer forms a limitation on the propagation of the light, so that the light energy propagates in the optical waveguide without being diffused to the surrounding area or even dissipated, so The larger the refractive index difference (i.e., the refractive index contrast) of the waveguide region and the surrounding package confinement region, the better.
  • optical waveguides prepared by the above two conventional methods have disadvantages such as small refractive index contrast, weak restriction of light in the optical waveguide, and large propagation loss.
  • the lithium niobate crystal itself has a relatively large hardness, it is difficult to perform etching by a conventional method. Both wet etching and dry etching have very slow etching rates. And, in the wet etching method, the rate of the etching rate is affected by the concentration rate of the solution solution and the temperature of the ambient temperature. Largely, so that the rate of etching etch rate is not uniform, resulting in a boundary of the waveguide leading edge of the ginseng, as shown in Figure 33aa and Figure The 33bb points are respectively a microscopic microscopic mirror image and a scanning electron microscopic mirror image of the edge boundary of the optical waveguide guided by the wet etching method.
  • the boundary of the boundary is clearly marked with a hairy thorn with a parametric difference, which leads to the transmission of light in the transmission.
  • the medium-capacity is easy to produce and the loss is large and the loss is large; in addition, due to the uneven rate rate due to the etching, the wet-wet etching is performed.
  • the etch will also create a side wall that is curved as shown in Figure 44, which The side wall of the side of the device that is not perpendicular to the vertical will be the same as the larger loss of the light in the process of propagation and propagation, and severely affecting the device.
  • the performance of the piece can be. .
  • the effect of deposition due to re-deposition in the process of etching etching should be
  • the side wall of the 1100 having a certain degree of tilting and oblique angle causes the transmission efficiency of the device component to be greatly reduced. .
  • the optical waveguide guide based on lithium lithium niobate prepared by the conventional method has a wave waveguide layer and a package
  • the refractive index of the wrap layer is a defect point where the contrast ratio is very low.
  • the side wall of the optical waveguide guide cannot be It can reach the vertical state of vertical, and therefore it will also limit the work performance of the whole device. .
  • the purpose of the present invention is to provide a part-of-the-work problem problem or a full-question question in the back-background technique, and provide an efficiency for one type of work.
  • a method for preparing a suspension type hollow optical wave waveguide guided preparation method includes:
  • Step 11 forming a crystal lattice damage damage in a predetermined pre-predetermined region under the surface of the surface of the crystal material material;
  • Step 22 forming a etched etching channel that will selectively contact the selected lattice damage damage and communicate with the outer boundary;
  • Step 33 utilizing the etch etching liquid to remove the selected lattice damage damage through the etched etching channel. .
  • step 1 Preferably, in the step 1:
  • the crystal material was bombarded with a 1 mega-electron krypton ion beam.
  • step 2 the step 2:
  • An etched channel is etched in the region of the crystalline material corresponding to the selected lattice damage using a focused ion beam etching method.
  • the etching channel is a cylinder or a cube; the number of the etching channels is greater than or equal to 1.
  • the crystal material is a lithium niobate material or a lithium niobate material.
  • the present invention also provides a suspended optical waveguide prepared according to any of the above-described suspension optical waveguide preparation methods.
  • the waveguide layer of the suspended optical waveguide is a crystalline material, and the upper cladding layer and the lower cladding layer are both air.
  • the suspended optical waveguide is a suspended flat optical waveguide or a suspended tunnel optical waveguide.
  • a photonic crystal structure is further formed on the suspended tunnel type optical waveguide.
  • a lattice damage is formed in a predetermined region below the surface of the crystal material, and a portion where the lattice damage is formed has a refractive index smaller than a portion where the lattice damage is not formed, and thus can be formed.
  • the difference in refractive index which in turn constitutes an optical waveguide, limits the propagation of the beam in the region of the optical waveguide.
  • the present invention further forms an etched channel that connects the selected lattice damage to the outside; and finally removes the selected lattice damage through the etched channel using an etchant to form air
  • the barrier layer finally leads to a suspended optical waveguide.
  • the contrast difference of the refractive index in the vertical direction is maximized, and the waveguide layer is the crystalline material itself.
  • the upper wrap layer and the lower wrap layer are both air. Therefore, the light is well limited in the vertical direction in the range of the optical waveguide, and the energy of the diffusion loss of the optical waveguide leaking toward the substrate is almost negligible, thereby making the optical waveguide Work efficiency has been effectively improved.
  • Figure la is a schematic view of preparing a flat optical waveguide using a proton exchange method
  • Figure lb is a schematic diagram of preparing a tunnel type optical waveguide using a proton exchange method
  • 2a is a schematic view of preparing a flat panel optical waveguide using a titanium diffusion method
  • 2b is a schematic view of preparing a tunnel type optical waveguide using a titanium diffusion method
  • Figure 3a is a micrograph of the boundary of the optical waveguide prepared by wet etching
  • Figure 3b is a scanning electron micrograph of the boundary of the optical waveguide prepared by wet etching
  • Figure 4 is a curved side view of an optical waveguide prepared by wet etching
  • Figure 5 is a perspective side view of an optical waveguide prepared by dry etching
  • FIGS. 7a to 7c are schematic diagrams showing a flow of a method for preparing a suspended optical waveguide according to an embodiment of the present invention
  • Figure 8 is a partial wet etching comparison diagram in which a lattice damage is formed and no lattice damage is formed;
  • Figure 9a is a perspective view of a scanning electron microscope of a suspended microdisk;
  • Figure 9b is a scanning electron microscope sectional view of a suspended microdisk
  • Fig. 10 is a scanning electron micrograph of a flat-plate type optical waveguide which is wet-etched for 10 minutes
  • Fig. 11 is a scanning electron micrograph of a flat-plate type optical waveguide which is wet-etched for 20 minutes
  • Figs. 12a-12b are in a suspended tunnel type Schematic diagram of preparing a crystal structure in an optical waveguide
  • part a of FIG. 13 is a cross-sectional view of energy distribution when light waves propagate in a flat-type optical waveguide prepared by a proton exchange method
  • the portion b in Fig. 13 is the corresponding three-dimensional energy distribution diagram of part a in Fig. 13;
  • Part C of Fig. 13 is a cross-sectional view of energy distribution when light waves are propagated in a tunnel type optical waveguide prepared by a proton exchange method
  • Part d of Figure 13 is a corresponding three-dimensional energy distribution diagram of part c of Figure 13;
  • Figure 14 is a cross-sectional view showing the energy distribution when light waves propagate in a suspended tunnel type optical waveguide in the embodiment of the present invention;
  • 15 is a microscopic dark field diagram of a suspended tunnel type optical waveguide according to an embodiment of the present invention; wherein: 11: lithium niobate crystal; 12: flat panel optical waveguide; 13: tunnel type optical waveguide; 14: lattice damage; 15: etched channel; 16: air barrier; 21: proton source; 22: metal mask;
  • the method for preparing a suspended optical waveguide mainly comprises the following steps:
  • Step 1 forming a lattice damage in a predetermined region below the surface of the crystal material; a portion forming the lattice damage has a refractive index smaller than a portion where the lattice damage is not formed, so that a refractive index difference can be formed, thereby initially forming an optical waveguide, and the light beam is formed Limiting propagation in the optical waveguide region.
  • the above crystal material is a base material for forming a suspended optical waveguide, which may be a lithium niobate (LiNb0 3 ) crystal, a lithium niobate (LiTaO 3 ) crystal, a lithium manganate (LiMn 2 0 4 ) crystal, or a lithium perchlorate ( LiC10 4 ) Crystal, lithium silicate (Li 2 SiO 3 ) crystal, lithium molybdate (Li 2 MoO 4 ) crystal, lithium titanate (Li 2 TiO 3 ) crystal, etc.
  • Step 2 forming an etched channel that connects the selected lattice damage to the outside; the purpose of forming the etched via is to allow the etchant to contact the portion having the lattice damage through the etched vias in the following steps and Further corroding these parts;
  • Step 3 removing the selected lattice damage through the etching channel by using an etching solution, thereby forming an air barrier layer, and finally obtaining a suspended optical waveguide.
  • the waveguide layer of the suspended optical waveguide is a crystalline material, and the upper cladding layer and the lower cladding layer are both air.
  • the contrast difference of the refractive index in the vertical direction is maximized, the waveguide layer is the crystal material itself, and the upper cladding layer and the lower cladding layer are both air, therefore, the light In the vertical direction, it is well limited in the range of the optical waveguide, leakage Work efficiency has been effectively improved.
  • the lithium niobate crystal commonly used in the industry is taken as an example to describe the preparation method of the suspended optical waveguide and the suspended optical waveguide provided by the present invention in more detail.
  • the method for preparing a suspended optical waveguide mainly includes the steps of:
  • Step 1 forming a lattice damage 14 in a predetermined region below the surface of the crystal material; for example: placing the lithium niobate crystal 11 under the metal mask 22 including a predetermined pattern;
  • the lithium niobate crystal 11 is bombarded with an ion beam to form a lattice damage 14 associated with the pattern of the metal mask 31 under the surface of the lithium niobate crystal 11;
  • the ion beam may be a helium ion beam 32, a mercury ion beam, or a cadmium
  • the portion where the lattice damage 14 is formed has a refractive index smaller than that of the portion where the lattice damage is not formed, so that the refractive index difference can be formed, and the optical waveguide is initially formed to restrict the light beam from propagating in the optical waveguide region.
  • Step 2 forming an etch channel 15 that connects the selected lattice damage 14 to the outside; for example: using a focused ion beam 42 etching method or other similar etching method in the lithium niobate crystal 11
  • the etch channel 15 is etched on the region corresponding to the selected lattice damage 14 , and the etch channel 15 may be a cylinder or a cube or the like; the number of the etch channels 15 is greater than or equal to 1;
  • the purpose is such that in the following step 3, the etching liquid can contact the portion having the lattice damage 14 through the etching channels 15 and further the portions The corrosion is separated.
  • Step 3 removing the selected lattice damage 14 through the etching channel 15 by using an etching solution; for example, contacting the selected through the etching channel 15 by an etching solution by a wet etching technique
  • the lattice damage 14 causes the portions to be etched away to form an air barrier layer 16;
  • the etching solution may be composed of hydrofluoric acid and nitric acid, for example, the etching solution may be a mixed solution of hydrofluoric acid and nitric acid, and both The mixing ratio is 1:2; the size of the finally formed air barrier 16 can be controlled by precisely changing the time of the wet etching.
  • the thickness of the air barrier 16 can also be controlled by changing the energy of the ion beam during the bombardment of the erbium ion beam 32. Specifically, the larger the ion beam energy, the thicker the resulting 14-layer lattice damage. Therefore, the thicker the air barrier layer 16 formed after the wet etching is, and the thicker lattice damage region can be formed by superimposing the bombardment using the helium ion beam 32 of different energies, thereby further The thickness of the air compartment 16 is greatly increased.
  • the suspended optical waveguide is formed on the surface of the lithium niobate crystal.
  • the waveguide layer is the lithium niobate crystal itself (refractive index of 2.3), while the upper and lower layers are air (refraction). The rate is 1). Therefore, the light is well limited in the vertical direction in the range of the optical waveguide, and the energy of the diffusion loss of the optical waveguide leaking toward the substrate is almost negligible, so that the working efficiency of the optical waveguide is effectively improved.
  • the method for preparing a suspended optical waveguide can also be used for preparing a suspended planar optical waveguide and a suspended tunnel optical waveguide.
  • a scanning electron microscope image of a flat-plate type waveguide having a wet etching time of 10 minutes is shown in Fig. 10; and a scanning electron microscope image of a flat-plate type waveguide having a wet etching time of 20 minutes is shown in Fig. 11.
  • the size of the hollow region i.e., the air barrier
  • the etching time is long enough, the entire flat plate can be etched and completely suspended.
  • the optical characteristics of the band gap can be generated by using a photonic crystal, and the corresponding photonic crystal structure can also be prepared and embedded in the optical waveguide structure to form a more widely used optical device; for example, in a tunnel type optical waveguide, further Etching a photonic crystal structure to prepare light As shown in FIG. 12a and FIG. 12b, in the tunnel type optical waveguide in which the photonic crystal structure is etched, the direction of the arrow is the direction of the optical waveguide and also the direction in which the light is transmitted.
  • the invention can solve the problem that the refractive index difference of the optical waveguide existing in other conventional types is too small, so that the transmission efficiency of the corresponding optical device can be greatly improved; for example, as shown in part a of FIG. 13, the light wave is A cross-sectional view of the energy distribution during propagation in a slab waveguide prepared by a proton exchange method, where part b in Figure 13 is the corresponding three-dimensional energy distribution diagram; and part c in Fig. 13 is the propagation of light waves in a tunnel-type waveguide prepared by proton exchange The energy distribution cross-section of Fig. 13 is the corresponding three-dimensional energy distribution diagram in Fig.
  • Figure 14 is a cross-sectional view showing the energy distribution of light waves propagating in a suspended tunnel type waveguide prepared by the suspension optical waveguide manufacturing method provided by the present invention, and a uniform energy distribution and good light in the optical waveguide range can be observed. limit.
  • the suspended optical waveguide provided by the present invention has a smaller light leakage coefficient, and the energy leakage (direction toward the substrate) in the vertical direction when the light propagates therein is negligible.
  • 15 is a microscopic dark field diagram of a suspended tunnel type optical waveguide prepared by the method for preparing a suspended optical waveguide provided by the present invention. It can be observed that the boundary of the optical waveguide is very uniform and smooth, and is not like wet etching. The rough boundary of the burr shape produced by the eclipse.
  • a focused ion beam etching method can be used to form a lattice damage region and a region boundary where no lattice damage is formed in a lithium niobate crystal.
  • a rectangular hole is etched, as shown in Fig. 8.
  • a high-energy helium ion beam is bombarded to form a lattice damage region, and the lithium niobate crystal is placed in the etching liquid.
  • a suspended microdisk can be prepared by the method provided in this embodiment, as shown in FIG. 9a, and, as shown in FIG. 9b, for further observation of the suspended micrometer.
  • the internal structure of the disc can be cut by the focusing ion beam, and the suspended micro-disc can be cut away to obtain a cross-sectional view of the internal structure of the device, from which the air compartment can be clearly observed.
  • the method for preparing a suspended optical waveguide provided in this embodiment and the suspended optical waveguide obtained by the method can well solve the problem that the refractive index contrast difference of the optical waveguide based on lithium niobate crystal in the prior art is too small (only About 0.1) and the traditional etching method is difficult to process lithium niobate crystals, and has great advantages such as ultra-low transmission loss and good light limitation; therefore, it can be widely used in the fields of optoelectronics, piezoelectric and photoacoustics, for example Can be used in electronic, optical, and modulation devices, such as laser frequency multipliers, optical switches, optical parametric amplifiers, high frequency broadband filters, ultra-large-capacity memory devices, and integrated optical modulators, etc.; The civil field has a strong practicality.
  • the present invention provides a suspended optical waveguide in which the contrast of the refractive index in the vertical direction is maximized during propagation of the light in the suspended optical waveguide, the waveguide layer being the crystalline material itself, and the upper cladding layer and The lower cladding layer is air. Therefore, the light is well limited in the vertical direction in the range of the optical waveguide, and the energy of the diffusion loss of the optical waveguide leaking toward the substrate is almost negligible, so that the working efficiency of the optical waveguide is effectively effective. Improvement.

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Abstract

一种悬空式光波导及其制备方法。制备方法包括：步骤1，在晶体材料（11）表面之下的预定区域形成晶格损伤（14）；步骤2，形成将选定的晶格损伤（14）与外界连通的刻蚀通道（15）；步骤3，利用刻蚀液经由刻蚀通道（15）去除选定的晶格损伤（14）。光在利用本制备方法制备的悬空式光波导中传播时，在垂直方向上折射率的对比度差异达到了最大化。波导层为晶体材料（11）本身，上包裹层及下包裹层均为空气。因此，光在垂直方向上会很好限制在光波导范围内，漏出光波导向基底方向扩散损耗的能量几乎可忽略不计，从而提高了光波导的工作效率。

Description

悬空式光波导及其制备方法 技术领域 本发明涉及光功能器件技术领域， 具体涉及一种悬空式光波导及其制 备方法。 背景技术
铌酸锂 （LiNb03 ) 晶体作为一种非线性光学材料， 应用范围很广， 被 称为是一种万能光电子材料， 以其优^的非线性光学效应、 电光效应、 压 电效应以及光折变效应被大量用于制备激光器的电光调 Q元件、 激光倍频 器、 光学开关、 光参量放大器、 高频宽带滤波器、 超大容量存储器件以及 集成光学调制器系列， 在军事以及民用领域有着广泛的用途。 例如， 电光 效应是指对晶体施加电场时， 晶体的折射率发生变化的效应。 而在某些晶 体内部由于自发极化存在着固有电偶极矩， 当对这种晶体施加电场时， 外 电场使晶体中的固有偶极矩的取向倾向于一致或某种优势取向， 因此， 必 然会改变晶体的折射率， 即外电场使晶体的光率体发生变化。 在光通讯中， 电-光调制器就是利用电场使晶体的折射率改变这一原理制成的： 电光晶体 位于起偏镜和检偏镜之间， 在未施加电场时， 起偏镜和检偏镜相互垂直， 自然光通过起偏镜后被检偏镜挡住而不能通过； 在施加电场后， 光率体变 化， 自然光便能通过检偏镜； 通过检偏镜的光的强弱由施加于电光晶体上 的电压的大小决定， 因此可以实现通过控制电压对光的强弱进行调制的目 的； 而铌酸锂晶体作为一种具有电光效应的材料， 在光通讯中起到光调制 作用并被广泛使用。
铌酸锂晶体还被广泛用于 1000纳米以上波长的倍频和 1064纳米泵浦光 的光参量放大， 也可用做准相位匹配； 同时， 铌酸锂晶体也被广泛应用于 光电调节器及光波导材料； 并且， 掺加一定量的铁和其他金属杂质的铌酸 锂晶体， 可用作全息记录介质材料； 此外， 铌酸锂晶体也可以用于相位调 解器、 相位光栅调解器、 大规模集成光学系统和红外探测器、 高频宽道带 滤波器等光学器件中。
而现有技术中基于铌酸锂晶体的光波导， 通常是通过质子交换方法或 者钛扩散方法进行制备的。
图 la和图 lb中所示为使用质子交换方法在铌酸锂晶体中制备平板型光 波导 12和隧道型光波导 13的流程示意图。 当把铌酸锂晶体 11浸泡在由有机 酸溶液组成的质子源 21中时， 在一定的反应条件下 （温度、 溶液浓度等参 数合适的情况下）,质子交换就会发生，交换过程可用以下离子反应式表示：
LiNb03+xH+^HxLi1-xNb03+xLi+;
光波导中 H+主要是以氢键 OH和自由 OH两种官能团的形式存在。 质子 交换的程度主要取决于反应的时间以及温度， 对于波导的形成而言， 则只 需部分交换， 即 0 < χ < 1。 在制备隧道型光波导 13时， 可以使用金属掩膜板 22置于铌酸锂晶体 11上方， 从而覆盖铌酸锂晶体 11表面的特定区域， 这样 质子交换在这些被覆盖的区域就不会发生， 通过选择性的质子交换即可以 形成隧道型光波导 13。
钛扩散方法的工作原理和质子交换方法类似； 图 2a和图 2b中所示为使 用钛扩散方法在铌酸锂晶体中制备平板型光波导 12和隧道型光波导 13的流 程示意图； 钛扩散方法中也是通过钛离子 31的注入， 改变铌酸锂晶体表面 一定区域的材料构成， 从而改变该区域的折射率， 进而和基底形成的折射 率差异， 从而构成光波导。
光在光波导中传播时， 由于波导层和包裹层介质折射率的差异形成对 光在传播过程中的限制， 使得光能量在光波导中传播而不至于扩散至周围 区域甚至消散损耗掉，因此波导区域和周围包裹限制区域的折射率差异（即 折射率对比度）越大越好。
然而， 上述两种传统方法制备的光波导具有折射率对比度小、 光在光 波导中的限制较弱、 传播损耗较大等缺点。
此外， 由于铌酸锂晶体自身硬度比较大， 因此很难用传统方法进行刻 蚀。 无论是湿法刻蚀还是干法刻蚀都只有很慢的刻蚀速率。 并并且且，， 在在湿湿法法刻刻蚀蚀中中，， 由由于于刻刻蚀蚀速速率率受受溶溶液液浓浓度度和和环环境境温温度度影影响响较较大大，， 使使得得刻刻蚀蚀速速率率不不均均一一，， 造造成成参参差差不不齐齐的的波波导导边边界界，， 如如图图 33aa和和图图 33bb分分别别为为湿湿 法法刻刻蚀蚀所所制制备备的的光光波波导导边边界界的的显显微微镜镜图图和和扫扫描描电电镜镜图图，， 从从中中可可以以看看到到边边界界 部部分分明明显显带带有有参参差差不不齐齐的的毛毛刺刺，， 这这样样就就导导致致光光在在传传输输过过程程中中容容易易产产生生较较大大 55 的的损损耗耗；； 此此外外，， 由由于于刻刻蚀蚀速速率率不不均均一一，， 湿湿法法刻刻蚀蚀还还会会造造成成如如图图 44中中所所示示的的弯弯 曲曲的的侧侧壁壁，，这这种种不不垂垂直直的的器器件件侧侧壁壁同同样样会会造造成成光光在在传传播播过过程程中中的的较较大大损损耗耗,, 严严重重影影响响器器件件的的性性能能。。
而而在在使使用用离离子子束束等等干干法法刻刻蚀蚀技技术术时时，， 由由于于在在刻刻蚀蚀过过程程中中的的再再沉沉积积效效应应 的的影影响响，， 同同样样会会使使得得光光波波导导的的侧侧壁壁出出现现如如图图 55中中所所示示的的不不垂垂直直侧侧壁壁，， 这这种种具具 1100 有有一一定定倾倾斜斜角角度度的的侧侧壁壁造造成成器器件件的的传传输输效效率率大大幅幅度度降降低低。。
综综上上所所述述，， 传传统统方方法法所所制制备备的的基基于于铌铌酸酸锂锂的的光光波波导导具具有有波波导导层层和和包包裹裹 层层的的折折射射率率对对比比度度很很低低的的缺缺点点。。 而而且且，， 由由于于铌铌酸酸锂锂晶晶体体本本身身质质地地非非常常坚坚硬硬,, 无无论论釆釆用用传传统统的的湿湿法法刻刻蚀蚀还还是是干干法法刻刻蚀蚀都都存存在在一一定定的的缺缺陷陷和和弊弊端端，， 例例如如，， 光光波波导导的的侧侧壁壁不不能能达达到到垂垂直直的的状状态态，， 因因此此也也会会限限制制整整个个器器件件的的工工作作性性能能。。
1155 发发明明内内容容
((一一）） 要要解解决决的的技技术术问问题题
本本发发明明的的目目的的在在于于背背景景技技术术中中的的部部分分问问题题或或者者全全部部问问题题，， 提提供供一一种种工工 作作效效率率更更高高的的悬悬空空式式光光波波导导以以及及该该悬悬空空式式光光波波导导的的制制备备方方法法。。
((二二））技技术术方方案案
2200 本本发发明明技技术术方方案案如如下下：：
一一种种悬悬空空式式光光波波导导制制备备方方法法，， 包包括括：：
步步骤骤 11 :: 在在晶晶体体材材料料表表面面之之下下的的预预定定区区域域形形成成晶晶格格损损伤伤；；
步步骤骤 22:: 形形成成将将选选定定的的晶晶格格损损伤伤与与外外界界连连通通的的刻刻蚀蚀通通道道；；
步步骤骤 33：： 利利用用刻刻蚀蚀液液经经由由所所述述刻刻蚀蚀通通道道去去除除所所述述选选定定的的晶晶格格损损伤伤。。
2255 优优选选的的，， 所所述述步步骤骤 11中中：：
Figure imgf000004_0001
利利用用离离子子束束轰轰击击晶晶体体材材料料，， 在在晶晶体体材材料料表表面面之之下下形形成成与与所所述述掩掩膜膜板板图图 案相关的晶格损伤。
优选的， 所述步骤 1中：
利用 1兆电子伏的氦离子束轰击晶体材料。
优选的， 所述步骤 2中：
利用聚焦离子束刻蚀方法， 在晶体材料上与所述选定的晶格损伤对应 的区域刻蚀出刻蚀通道。
优选的， 所述刻蚀通道为柱体或者立方体； 所述刻蚀通道的数量大于 或者等于 1。
优选的， 所述晶体材料为铌酸锂材料或者钽酸锂等材料。
本发明还提供了一种根据上述任意一种悬空式光波导制备方法制备的 悬空式光波导。
优选的， 所述悬空式光波导的波导层为晶体材料， 上包裹层以及下包 裹层均为空气。
优选的， 所述悬空式光波导为悬空式平板型光波导或者悬空式隧道型 光波导。
优选的， 所述悬空式隧道型光波导上还形成有光子晶体结构。
(三）有益效果
本发明实施例所提供的悬空式光波导制备方法， 首先在晶体材料表面 之下的预定区域形成晶格损伤， 形成晶格损伤的部分具有小于没有形成晶 格损伤部分的折射率， 因此可以形成折射率差异， 进而初步构成光波导， 将光束限制在光波导区域中传播。 但是， 同传统的质子交换方法以及钛扩 散方法类似， 由于产生的晶格损伤所带来的折射率对比度差异较小， 尤其 是在垂直方向上， 光在传输过程中很容易漏向基底方向并消散形成损耗； 因此， 本发明进一步的形成将选定的晶格损伤与外界连通的刻蚀通道； 最 后利用刻蚀液经由所述刻蚀通道去除所述选定的晶格损伤， 从而形成空气 隔层， 最终得到悬空式光波导。 光在该悬空式光波导中传播的过程中， 在 垂直方向上折射率的对比度差异达到了最大化， 波导层为晶体材料本身， 而上包裹层以及下包裹层均为空气， 因此， 光在垂直方向上会很好地限制 在光波导的范围内， 漏出光波导向基底方向扩散损耗的能量几乎可以忽略 不计， 从而使光波导的工作效率得到了有效的提升。 附图说明
图 la是使用质子交换方法制备平板型光波导的示意图；
图 lb是使用质子交换方法制备隧道型光波导的示意图；
图 2a是使用钛扩散方法制备平板型光波导的示意图；
图 2b是使用钛扩散方法制备隧道型光波导的示意图；
图 3a是湿法刻蚀所制备的光波导边界的显微镜图；
图 3b是湿法刻蚀所制备的光波导边界的扫描电镜图；
图 4是由湿法刻蚀所制备的光波导的弯曲侧壁图；
图 5是由干法刻蚀所制备的光波导的倾斜侧壁图；
图 6是本发明所提供的悬空式光波导制备方法的流程示意图； 图 7a-图 7c是本发明实施例中所提供的悬空式光波导制备方法的流程 示意图；
图 8是形成有晶格损伤和没有形成晶格损伤的部分湿法刻蚀对比图； 图 9a是悬空式微米盘的扫描电镜斜视图；
图 9b是悬空式微米盘的扫描电镜截面图；
图 10是湿法刻蚀 10分钟的平板型光波导的扫描电子显微镜图； 图 11是湿法刻蚀 20分钟的平板型光波导的扫描电子显微镜图； 图 12a-12b是在悬空式隧道型光波导中制备晶体结构的示意图； 图 13中 a部分是光波在利用质子交换方法所制备的平板型光波导中传 播时的能量分布截面图；
图 13中 b部分是图 13中 a部分相应的三维能量分布图；
图 13中 C部分是光波在利用质子交换方法所制备的隧道型光波导中传 播时的能量分布截面图；
图 13中 d部分是图 13中 c部分相应的三维能量分布图； 图 14 是光波在本发明实施例中的悬空式隧道型光波导中传播时的能 量分布截面图；
图 15是本发明实施例中悬空式隧道型光波导的显微镜暗场图； 图中： 11 : 铌酸锂晶体； 12: 平板型光波导； 13: 隧道型光波导； 14: 晶格损伤； 15: 刻蚀通道； 16: 空气隔层； 21 : 质子源； 22: 金属掩膜板；
31 : 钛离子束； 41 : 氦离子束； 42: 聚焦离子束。 具体实施方式
下面结合附图和实施例， 对本发明的具体实施方式做进一步描述。 以 下实施例仅用于说明本发明， 但不用来限制本发明的范围。
如图 6中所示， 本发明所提供的悬空式光波导制备方法主要包括以下 步骤：
步骤 1 : 在晶体材料表面之下的预定区域形成晶格损伤； 形成晶格损 伤的部分具有小于没有形成晶格损伤部分的折射率， 因此可以形成折射率 差异， 进而初步构成光波导， 将光束限制在光波导区域中传播。 上述晶体 材料为形成悬空式光波导的基底材料， 其可以是铌酸锂 （LiNb03 ) 晶体、 钽酸锂（LiTa03 ) 晶体、 锰酸锂（LiMn204 ) 晶体、 高氯酸锂（ LiC104 ) 晶 体、 硅酸锂 ( Li2Si03 )晶体、钼酸锂 ( Li2Mo04 )晶体以及钛酸锂 ( Li2Ti03 ) 晶 等等 ·
步骤 2: 形成将选定的晶格损伤与外界连通的刻蚀通道； 形成刻蚀通 道的目的是， 使得在下述步骤， 刻蚀液可以通过这些刻蚀通道接触到具有 晶格损伤的部分并进一步把这些部分腐蚀掉；
步骤 3: 利用刻蚀液经由所述刻蚀通道去除所述选定的晶格损伤， 从 而形成空气隔层， 最终得到悬空式光波导。 该悬空式光波导的波导层为晶 体材料， 上包裹层以及下包裹层均为空气。
光在在上述悬空式光波导中传播的过程中， 在垂直方向上折射率的对 比度差异达到了最大化， 波导层为晶体材料本身， 而上包裹层以及下包裹 层均为空气， 因此， 光在垂直方向上会很好地限制在光波导的范围内， 漏 工作效率得到了有效的提升。
实施例一
本实施例中选取行业中常用的铌酸锂晶体为例对本发明所提供的的悬 空式光波导及悬空式光波导制备方法加以更详细的说明。
如图 7a-图 7c中所示， 本实施例中所提供的悬空式光波导制备方法主 要包括步骤：
步骤 1 : 在晶体材料表面之下的预定区域形成晶格损伤 14; 例如： 将铌酸锂晶体 11置于包括预设图案的金属掩膜板 22之下；
利用离子束轰击铌酸锂晶体 11 ,在铌酸锂晶体 11表面之下形成与金属 掩膜板 31的图案相关的晶格损伤 14; 上述离子束可以是氦离子束 32、 汞 离子束、 镉离子束以及氩离子束等等； 由于使用氦离子束 32成本较低， 因 此， 本实施例中使用能量为 1 兆电子伏（MeV ) 的氦离子束 32轰击铌酸 锂晶体 11。
形成晶格损伤 14的部分具有小于没有形成晶格损伤 14部分的折射率， 因此可以形成折射率差异， 进而初步构成光波导， 将光束限制在光波导区 域中传播。
但是， 同传统的质子交换方法以及钛扩散方法类似， 由离子束轰击产 生的晶格损伤 14所带来的折射率对比度差异较小， 尤其是在垂直方向上， 光在传输过程中很容易漏向基底方向并消散形成损耗。 因此， 还需要通过 步骤 2以及步骤 3进行进一步处理。
步骤 2: 形成将选定的晶格损伤 14与外界连通的刻蚀通道 15; 例如： 利用聚焦离子束 42 ( focused ion beam )刻蚀方法或者其他类似的刻蚀 方法， 在铌酸锂晶体 11上与选定的晶格损伤 14对应的区域刻蚀出刻蚀通 道 15 , 刻蚀通道 15可以为柱体或者立方体等等； 刻蚀通道 15的数量大于 或者等于 1 ; 形成刻蚀通道 15的目的是， 使得在下述步骤 3中， 刻蚀液可 以通过这些刻蚀通道 15接触到具有晶格损伤 14的部分并进一步把这些部 分腐蚀掉。
步骤 3: 利用刻蚀液经由刻蚀通道 15去除选定的晶格损伤 14; 例如： 通过湿法刻蚀 （wet etching )技术， 利用刻蚀液通过上述刻蚀通道 15 接触到所述选定的晶格损伤 14,从而将这些部分腐蚀掉，形成空气隔层 16; 刻蚀液可以由氢氟酸和硝酸组成， 例如刻蚀液可以为氢氟酸和硝酸的混合 溶液， 并且两者的混合比例为 1 : 2; 最终形成的空气隔层 16 的尺寸可以 通过精确改变湿法刻蚀的时间来进行控制。
除此此外， 空气隔层 16的厚度还可以通过改变氦离子束 32轰击过程 中离子束的能量来控制， 具体而言， 离子束能量越大， 所产生的晶格损伤 14层也就越厚， 因此在湿法刻蚀之后所形成的空气隔层 16也就越厚； 并 且， 还可以通过使用不同能量的氦离子束 32进行叠加轰击的方法， 形成更 厚的晶格损伤区域， 从而更大幅度的提升空气隔层 16的厚度。
通过上述步骤， 悬空式光波导便在铌酸锂晶体的表面形成了。 光在其 中传播的过程中， 在垂直方向上折射率的对比度差异达到了最大化， 波导 层为铌酸锂晶体本身 （折射率为 2.3 ), 而上包裹层以及下包裹层均为空气 (折射率为 1 )。 因此， 光在垂直方向上会很好地限制在光波导的范围内， 漏出光波导向基底方向扩散损耗的能量几乎可以忽略不计， 从而使光波导 的工作效率得到了有效的提升。
进一步的， 本实施例中所提供的悬空式光波导制备方法， 还可以用于 制备悬空式平板型光波导和悬空式隧道型光波导。 例如， 图 10中所示是湿 法刻蚀时间为 10分钟的平板型波导的扫描电子显微镜图； 图 11 中所示是 湿法刻蚀时间为 20分钟的平板型波导的扫描电子显微镜图。 可以看到， 镂 空区域 （即空气隔层） 的大小可以通过改变湿法刻蚀的时间来控制， 如果 刻蚀时间足够长的话， 整个平板可以被刻蚀透而完全悬空。
此外， 利用光子晶体可以产生能带隙的光学特点， 相应的光子晶体结 构也可以被制备嵌入到光波导结构中， 进而形成用途更广泛的光学器件； 例如， 在隧道型光波导中， 可以进一步刻蚀出光子晶体结构， 以便制备光 学调制器； 如图 12a以及图 12b中所示， 在刻蚀出光子晶体结构的隧道型 光波导中， 箭头方向为光波导的方向， 同时也是光在其中传输的方向。
通过本发明， 可以解决目前其他传统类型已存在的光波导折射率差异 对比度偏小的问题， 从而可以大幅度提升相应光学器件的传输效率； 例如， 如图 13中 a部分所示，是光波在利用质子交换方法制备的平板型波导中传 播时的能量分布截面图， 图 13 中 b部分为相应的三维能量分布图； 图 13 中 c部分是光波在利用质子交换方法制备的隧道型波导中传播时的能量分 布截面图， 图 13中 d部分为相应的三维能量分布图； 可以明显发现， 光波 导的传输性能较弱， 光在传输过程中损耗偏大， 光能量在光波导中的分布 也不均一。图 14为光波在利用本发明所提供的悬空式光波导制备方法所制 备的悬空式隧道型波导中传播时的能量分布截面图， 可以观测到均一的能 量分布以及光在光波导范围内的良好限制。 通过比较可以看出， 本发明所 提供的悬空式光波导具有更小的漏光系数， 光在其中传播时在垂直方向上 的能量泄露（向衬底方向）可以忽略不计。 图 15中所示为利用本发明所提 供的悬空式光波导制备方法制备的悬空式隧道型光波导的显微镜暗场图， 可以观测到光波导的边界非常均匀和平滑， 并没有像湿法刻蚀所产生的毛 刺形状的粗糙边界。
发明人还进一步的验证了上述悬空式光波导制备方法的有效性： 可以首先使用聚焦离子束刻蚀法， 在铌酸锂晶体形成有晶格损伤的区 域和没有形成晶格损伤的区域分界处刻蚀出一个矩形的孔洞，如图 8所示， 在白色虛线的左侧为经过高能量氦离子束轰击， 形成有晶格损伤的区域， 把上述铌酸锂晶体放入刻蚀液中， 通过湿法刻蚀刻蚀一段时间后， 可 以明显看到， 在形成有晶格损伤的区域， 已经形成了空气隔层 16, 而在没 有形成有晶格损伤的区域， 则没有形成空气隔层。
并且， 利用本实施例中所提供的方法可以制备出悬空式微米盘， 具体 如图 9a中所示， 并且， 如图 9b中所示， 为了更进一步的观测悬空式微米 盘的内部结构， 可以使用聚焦离子束的切割功能， 将悬空式微米盘剖开， 进而得到可以观测器件内部结构的截面图， 从中可以清晰地观测到空气隔 层。
本实施例中所提供的悬空式光波导制备方法以及通过该方法得到的悬 空式光波导， 可以很好的解决现有技术中基于铌酸锂晶体的光波导折射率 对比度差异过小 （仅为 0.1 左右） 以及传统刻蚀方法对铌酸锂晶体难以加 工的问题， 同时具有的超低传输损耗和对光的良好限制等巨大优势； 因此 可以广泛应用于光电、 压电以及光声领域， 例如可以用于电子、 光学以及 调制类等器件， 比如可以是激光倍频器、 光学开关、 光参量放大器、 高频 宽带滤波器、 超大容量存储器件以及集成光学调制器系列等等； 不论在军 事还是民用领域都有着很强的实用性。
以上实施方式仅用于说明本发明， 而并非对本发明的限制， 有关技术 领域的普通技术人员， 在不脱离本发明的精神和范围的情况下， 还可以做 出各种变化和变型， 因此所有等同的技术方案也属于本发明的保护范畴。 工业实用性
本发明提供了一种悬空式光波导， 光在该悬空式光波导中传播的过程 中， 在垂直方向上折射率的对比度差异达到了最大化， 波导层为晶体材料 本身， 而上包裹层以及下包裹层均为空气， 因此， 光在垂直方向上会很好 地限制在光波导的范围内， 漏出光波导向基底方向扩散损耗的能量几乎可 以忽略不计， 从而使光波导的工作效率得到了有效的提升。

Claims

权 利 要 求
1、 一种悬空式光波导制备方法， 其特征在于， 包括：
步骤 1： 在晶体材料表面之下的预定区域形成晶格损伤；
步骤 2: 形成将选定的晶格损伤与外界连通的刻蚀通道；
步骤 3: 利用刻蚀液经由所述刻蚀通道去除所述选定的晶格损伤。
2、 根据权利要求 1所述的悬空式光波导制备方法， 其特征在于， 所述 步骤 1中：
将所述晶体材料置于掩膜板之下；
利用离子束轰击晶体材料， 在晶体材料表面之下形成与所述掩膜板图 案相关的晶格损伤。
3、 根据权利要求 2所述的悬空式光波导制备方法， 其特征在于， 所述 步骤 1中：
利用 1兆电子伏的氦离子束轰击晶体材料。
4、 根据权利要求 1-3任意一项所述的悬空式光波导制备方法， 其特征 在于， 所述步骤 2中：
利用聚焦离子束刻蚀方法， 在晶体材料上与所述选定的晶格损伤对应 的区域刻蚀出刻蚀通道。
5、 根据权利要求 4所述的悬空式光波导制备方法， 其特征在于， 所述 刻蚀通道为柱体或者立方体； 所述刻蚀通道的数量大于或者等于 1。
6、 根据权利要求 1-3或 5任意一项所述的悬空式光波导制备方法， 其特 征在于， 所述晶体材料为铌酸锂材料或者钽酸锂等材料。
7、 一种根据权利要求 1-6任意一项所述的方法制备的悬空式光波导。
8、 根据权利要求 7所述的悬空式光波导， 其特征在于， 所述悬空式光 波导的波导层为晶体材料， 上包裹层以及下包裹层均为空气。
9、 根据权利要求 8所述的悬空式光波导， 其特征在于， 所述悬空式光 波导为悬空式平板型光波导或者悬空式隧道型光波导。
10、 根据权利要求 9所述的悬空式光波导， 其特征在于， 所述悬空式隧
12
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