WO2014064973A1 - 距離センサ及び距離画像センサ - Google Patents
距離センサ及び距離画像センサ Download PDFInfo
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- WO2014064973A1 WO2014064973A1 PCT/JP2013/068525 JP2013068525W WO2014064973A1 WO 2014064973 A1 WO2014064973 A1 WO 2014064973A1 JP 2013068525 W JP2013068525 W JP 2013068525W WO 2014064973 A1 WO2014064973 A1 WO 2014064973A1
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- 238000012546 transfer Methods 0.000 claims abstract description 217
- 239000004065 semiconductor Substances 0.000 claims description 258
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- 230000007423 decrease Effects 0.000 description 4
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
Definitions
- the present invention relates to a distance sensor and a distance image sensor.
- Patent Documents 1 and 2 disclose techniques for improving transfer speed in a distance image sensor.
- a pair of transfer electrodes for transferring charges generated in the charge generation region to the charge collection region are arranged along a predetermined side of the rectangular charge generation region. Yes.
- the impurity concentration increases as it approaches the predetermined side, and the potential distribution is inclined toward the predetermined side. This facilitates the movement of the charge generated in the charge generation region toward the transfer electrode.
- Patent Document 3 discloses a technique for suppressing crosstalk between transfer electrodes to which signals having different phases are input in a distance image sensor.
- transfer electrodes to which signals having different phases are input are arranged so as to face each other across the charge generation region.
- an impurity region which is an insulating region is provided between the transfer electrodes.
- JP 2010-40594 A US Patent Application Publication No. 2011/0198481 US Patent Application Publication No. 2011/0188026
- the present invention is a distance sensor, including a first side and a second side facing each other, wherein the lengths of the first and second sides are based on an interval between the first side and the second side.
- a plurality of first side signal charge collection regions that collect signal charges generated according to incident light, and first side sides that are spaced apart from each other along the second side on the second side of the light receiving region and that correspond to each other
- a plurality of second side signal charge collection regions that are arranged opposite to each other across the signal charge collection region and the light receiving region, and are provided with charge transfer signals having different phases and corresponding first side signal
- a plurality of first sides disposed between the charge collection region and the photogate electrode A transfer electrode, a charge transfer signal having a different phase, a plurality of
- a high potential is generated in a region located between the first side and the second side of the light receiving region, and a potential gradient is formed from the region toward the first side and the second side.
- a high potential is generated between the first side and the second side, and a potential gradient is formed toward both the first side and the second side.
- the signal charge The travel distance of is shortened. Therefore, the transfer rate can be improved.
- the potential adjusting means is shared by the region directly under the first side of the photogate electrode and the region directly under the second side of the photogate electrode, the area use efficiency is improved. ing. Therefore, the aperture ratio can be improved.
- the charge transfer signals having different phases are input to the plurality of first side transfer electrodes, and the charge transfer signals having different phases are input to the plurality of second side transfer electrodes. Even if the charge transfer signal is applied, the signal charges generated in both the region immediately below the first side of the photogate electrode and the region directly below the second side of the photogate electrode can be taken in. It is possible. Therefore, the signal charge is not missed, and the transfer accuracy can be improved.
- the charge transfer signals having different phases are input to the plurality of first side transfer electrodes, and the charge transfer signals having different phases are input to the plurality of second side transfer electrodes.
- the influence of manufacturing variations in the direction in which the first side and the second side face each other. Can be reduced. Therefore, the transfer accuracy can be improved.
- the plurality of first side transfer electrodes and the plurality of second side transfer electrodes include a first side transfer electrode and a second side transfer electrode to which a charge transfer signal having the same phase is applied, You may arrange
- the plurality of first side transfer electrodes and the plurality of second side transfer electrodes include a first side transfer electrode and a second side transfer electrode to which charge transfer signals having different phases are applied, You may arrange
- the plurality of first side transfer electrodes and the plurality of second side transfer electrodes may be arranged such that their positions are shifted from each other in the direction in which the first and second sides extend.
- the dependency due to the input positions of the charge transfer signals can be offset. Therefore, the transfer accuracy can be improved.
- the plurality of first side transfer electrodes may be provided with charge transfer signals having different phases, and may have a pair of first side transfer electrodes adjacent to each other in the extending direction of the first and second sides.
- the second side transfer electrodes may be provided with charge transfer signals having different phases, and may have a pair of second side transfer electrodes adjacent to each other in the extending direction of the first and second sides.
- Each first-side transfer electrode and each pair of second-side transfer electrodes include a first portion extending along a direction in which the first and second sides extend, and a first portion on a side far from the adjacent first portion. A second portion extending from the end portion so as to overlap the light receiving region may be provided.
- the distance sensor is disposed on the first side of the light receiving region so as to be separated from each other along the first side and separated from the first side signal charge collecting region, and discharges the generated unnecessary charges.
- the discharge area and the second side of the light receiving area are spaced apart from each other along the second side and are separated from the second side signal charge collection area, and the second side is unnecessary for discharging the generated unnecessary charges.
- a first side that is disposed between the charge discharge region, the first side unnecessary charge discharge region, and the photogate electrode, and selectively blocks and releases the flow of unnecessary charges to the first side unnecessary charge discharge region.
- a second side unnecessary charge discharging gate electrode It is arranged between the side unnecessary charge discharging gate electrode, the second side unnecessary charge discharging region and the photogate electrode, and selectively blocks and releases the flow of unnecessary charge to the second side unnecessary charge discharging region.
- a second side unnecessary charge discharging gate electrode It may be provided to. In this case, since unnecessary charges can be discharged, the transfer accuracy can be improved.
- the first side unnecessary charge discharging gate electrode and the second side unnecessary charge discharging gate electrode are formed from the third portion so as to overlap the light receiving region with the third portion extending along the direction in which the first and second sides extend. And a fourth portion that extends.
- the potential is increased in the region immediately below the unnecessary charge discharge gate. Accordingly, in the light receiving region, a potential gradient is generated along the direction in which the first and second sides extend from the fourth portion of the unnecessary charge discharging gate to the periphery, and the signal is transmitted in the direction in which the first and second sides extend. The charge moves quickly. Therefore, the transfer rate can be improved.
- the light receiving region may include a first region including a first side and extending in a direction in which the first side extends, and a second region including a second side and extending in a direction in which the second side extends,
- the potential adjusting means is disposed so as to be positioned between the first region and the second region, has the same conductivity type as the first and second regions, and has a higher impurity concentration than the first and second regions. It may be a semiconductor region. In this case, a high potential can be generated with a simple configuration.
- the photogate electrode is spaced apart from the first electrode portion in the direction in which the first side and the second side face each other and the first electrode portion disposed on the first side region in the light receiving region and the first electrode portion in the light receiving region.
- a second electrode portion disposed on the region on the two sides, and the potential adjusting means includes the first and second electrode portions between the first electrode portion and the second electrode portion. It may be an electrode that is electrically separated and to which a potential lower than the potential applied to the photogate electrode is applied. In this case, the amount of potential gradient can be suitably adjusted.
- the present invention provides an imaging region including a plurality of units arranged one-dimensionally or two-dimensionally on a semiconductor substrate, and obtains a distance image based on the amount of charge output from the unit.
- Each of the image sensors is a distance sensor as described above.
- the present invention it is possible to provide a distance sensor and a distance image sensor that can improve transfer speed, transfer accuracy, and aperture ratio.
- FIG. 1 is a configuration diagram of a distance measuring apparatus according to the embodiment.
- FIG. 2 is a cross-sectional view of the distance image sensor according to the embodiment.
- FIG. 3 is a plan view of the distance image sensor of FIG.
- FIG. 4 is a plan view showing a part of the distance sensor in FIG.
- FIG. 5 is a sectional view taken along line VV in FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
- FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
- FIG. 8 is a diagram showing a potential distribution for explaining the charge accumulation operation.
- FIG. 9 is a diagram showing a potential distribution for explaining the charge accumulation operation following FIG.
- FIG. 10 is a diagram showing a potential distribution for explaining the charge discharging operation.
- FIG. 11 is a timing chart of various signals.
- FIG. 12 is a plan view showing a part of a distance sensor according to another embodiment.
- FIG. 13 is a plan view showing a part of a distance sensor according to still another embodiment.
- FIG. 14 is a plan view showing a part of a distance sensor according to still another embodiment.
- FIG. 15 is a plan view showing a part of a distance sensor according to still another embodiment.
- FIG. 16 is a plan view showing a part of a distance sensor according to still another embodiment.
- FIG. 17 is a plan view showing a part of a distance sensor according to still another embodiment.
- FIG. 18 is a plan view showing a part of a distance sensor according to still another embodiment.
- FIG. 12 is a plan view showing a part of a distance sensor according to another embodiment.
- FIG. 13 is a plan view showing a part of a distance sensor according to still another embodiment.
- FIG. 14 is a plan view showing a part of a distance sensor
- FIG. 19 is a plan view showing a part of a distance sensor according to still another embodiment.
- FIG. 20 is a diagram showing a potential distribution in a cross section along the line XX-XX in FIG.
- FIG. 21 is a plan view showing a part of a distance sensor according to still another embodiment.
- 22 is a cross-sectional view taken along line XXII-XXII in FIG.
- FIG. 23 is a plan view showing a part of a distance sensor according to still another embodiment.
- FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG.
- FIG. 1 is a configuration diagram of a distance measuring apparatus according to the embodiment.
- the distance measuring device includes a distance image sensor 1, a light source 3 that emits near-infrared light, a drive circuit 4, a control circuit 2, and an arithmetic circuit 5.
- Drive circuit 4 supplies a pulse drive signal S P to the light source 3.
- the control circuit 2 the distance the first gate electrode TX1 1 included in each distance sensor P1 (see FIG. 3) of the image sensor 1, TX1 2 (see FIG. 4), synchronized with the pulse drive signal S P as a charge transfer signal giving detection gate signals S 1, the second gate electrode TX2 1, TX2 2 in (see FIG.
- the arithmetic circuit 5 is a signal d indicating distance information read from the first semiconductor regions FD1 1 and FD1 2 (see FIG. 4) and the second semiconductor regions FD2 1 and FD2 2 (see FIG. 4) of each distance sensor P1. 1 and the signal d 2, and calculates the distance to the object H such as a pedestrian.
- the distance in the horizontal direction D from the distance image sensor 1 to the object H is defined as d.
- the control circuit 2 inputs the pulse drive signal S P to the switch 4b of the driving circuit 4.
- a light projecting light source 3 comprising an LED or a laser diode is connected to a power source 4a via a switch 4b.
- the pulse drive signal S P is input to the switch 4b, a drive current having the same waveform as the pulse drive signal S P is supplied to the light source 3, the light source 3 is emitted pulse light L P as a probe light for distance measurement Is output.
- outgoing pulse light L P is irradiated on the object H, the pulse light is reflected by the object H.
- the reflected pulse light as the detection pulse light L D enters the range image sensor 1. While detection pulse light L D is incident on the range image sensor 1, the distance image pulse detection signal from the sensor 1 S D is outputted.
- the distance image sensor 1 is disposed on the wiring board 10.
- a signal d 1 and a signal d 2 having distance information are output from each distance sensor P 1 of the distance image sensor 1 via the wiring on the wiring board 10.
- FIG. 2 is a cross-sectional view of the distance image sensor according to the embodiment.
- the distance image sensor 1 is a surface incident type distance image sensor and includes a semiconductor substrate 1A.
- the semiconductor substrate 1A is made of Si or the like.
- the back surface 1BK opposite to the light incident surface 1FT of the distance image sensor 1 is connected to the wiring substrate 10 via the adhesion region AD.
- the adhesion region AD includes an insulating adhesive and filler.
- the distance image sensor 1 includes a light shielding layer LI in which an opening LIa (see FIGS. 5 to 7) is formed at a predetermined position.
- the light shielding layer LI is disposed in front of the light incident surface 1FT.
- the light shielding layer LI is made of a metal such as aluminum, for example.
- FIG. 3 is a plan view of the distance image sensor of FIG.
- the semiconductor substrate 1 ⁇ / b> A has an imaging region 1 ⁇ / b> B composed of a plurality (here, three) of distance sensors (units) P ⁇ b> 1 arranged one-dimensionally along the X direction.
- the imaging region 1B has a rectangular shape (specifically, a square shape).
- the distance sensor P1 has a rectangular shape whose longitudinal direction is the Y direction perpendicular to the X direction in plan view. In the distance sensor P1, the ratio of the length of the short side to the length of the long side is, for example, about 1/3. From the distance sensor P1, the charge amount Q1 and the charge amount Q2 is output as the signal d 1 and the signal d 2 with distance information described above.
- the distance sensor P1 outputs a charge amount Q1 and a charge amount Q2 corresponding to the distance to the object H as a minute distance measuring sensor. Therefore, if the reflected light from the object H is imaged on the imaging region 1B, a distance image of the object as a collection of distance information to each point on the object H can be obtained.
- the distance sensor P1 functions as one pixel.
- FIG. 4 is a plan view showing a part of the distance sensor in FIG.
- FIG. 5 is a sectional view taken along line VV in FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
- FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
- the illustration of the light shielding layer LI is omitted (the same applies to FIGS. 12 to 19, 21 and 23).
- the distance image sensor 1 includes the semiconductor substrate 1A having the light incident surface 1FT and the back surface 1BK facing each other (see FIG. 2).
- the semiconductor substrate 1A has a p-type first substrate region 1Aa located on the back surface 1BK side, and a p ⁇ -type second substrate region 1Ab located on the light incident surface 1FT side.
- the second substrate region 1Ab has a lower impurity concentration than the first substrate region 1Aa.
- the semiconductor substrate 1A can be obtained, for example, by growing a p ⁇ type epitaxial layer having an impurity concentration lower than that of the semiconductor substrate on the p type semiconductor substrate.
- Distance sensor P1 is provided with a photo gate electrode PG1, a plurality of first semiconductor regions FD1 1, and FD1 2, a plurality of second semiconductor regions FD2 1, FD2 2, a plurality of third semiconductor regions FD3 1, FD3 2, Fourth semiconductor region SR1, fifth semiconductor regions SR2 1 , SR2 2 , a plurality of first gate electrodes TX1 1 , TX1 2 , a plurality of second gate electrodes TX2 1 , TX2 2, and a plurality of third gate electrodes TX3 1 and TX3 2 are provided.
- the photogate electrode PG1 is provided on the light incident surface 1FT via an insulating layer 1E made of SiO 2 or the like.
- the photogate electrode PG1 is disposed corresponding to the opening LIa formed in the light shielding layer LI.
- the shape of the opening LIa has a rectangular shape with the Y direction as the long side direction in plan view.
- the photogate electrode PG1 has a shape corresponding to the opening LIa, and in a plan view, has a rectangular shape with the Y direction as the long side direction.
- the photogate electrode PG1 is made of polysilicon, but may be made of other materials.
- Light enters the semiconductor substrate 1A through the opening LIa.
- a light receiving region is defined in the semiconductor substrate 1A by the opening LIa.
- the light receiving region corresponds to the shape of the opening LIa and has a rectangular shape with the Y direction as the long side direction.
- the light receiving regions are opposed to each other in the X direction and extend in the Y direction, respectively, and the first and second long sides LS1 and LS2, and in the Y direction, face each other and extend in the X direction, respectively. (See FIG. 3).
- the lengths of the first and second long sides LS1, LS2 are longer than the distance between the first long side LS1 and the second long side LS2.
- a region corresponding to the photogate electrode PG1 functions as a charge generation region in which charges are generated according to incident light.
- the shape of the light receiving region, the shape of the photogate electrode PG1, and the shape of the charge generation region match in plan view. In each plan view, for the sake of explanation, each side of the light receiving region and each side of the photogate electrode PG1 are shown shifted from each other.
- the region including the first long side LS1 and extending in the direction in which the first long side LS1 extends is the first region.
- the region including the second long side LS2 and extending in the direction in which the second long side LS2 extends is the second region.
- the fourth semiconductor region SR1 is disposed between the first region and the second region.
- a region other than the light receiving region in the semiconductor substrate 1A (including the region where the first to third semiconductor regions FD1 1 to FD3 2 , the fifth semiconductor region SR2 and the first to third gate electrodes TX1 1 to TX3 2 are disposed.
- the region is covered with the light shielding layer LI, and light is prevented from entering the region. Thereby, generation
- the first semiconductor region FD1 1 is in the region of the first long side LS1 side spaced in the X direction from the light receiving region, and a plurality provided apart from each other along the first long side LS1.
- the first semiconductor region FD1 2 in the region of the second long side LS2 side spaced in the X direction from the light receiving area, along the second long side LS2 apart from each other, and, the first long side LS1 side corresponding respectively It is more disposed to face each other across the first semiconductor region FD1 1 and the light-receiving region.
- the first semiconductor region FD1 1 of the first long side LS1 side, a second long side LS2 side first semiconductor region FD1 2 of face each other in the X direction.
- Second semiconductor regions FD2 1 is in the region of the first long side LS1 side spaced in the X direction from the light receiving region, and a plurality provided apart from each other along the first long side LS1.
- Second semiconductor regions FD2 2 in the region of the second long side LS2 side spaced in the X direction from the light receiving area, along the second long side LS2 apart from each other, and, the first long side LS1 side corresponding respectively It is more disposed to face each other across the second semiconductor region FD2 1 and light-receiving region.
- the first semiconductor regions FD1 1 and the second semiconductor regions FD2 1 are alternately arranged along the Y direction and are separated from each other.
- a first semiconductor region FD1 2 and the second semiconductor region FD2 2 are arranged alternately along the Y direction, they are separated from each other.
- the second semiconductor region FD2 1 of the first long side LS1 side, a second long side LS2 side of the second semiconductor region FD2 2 are opposed to each other in the X direction.
- the first and second gate electrodes TX1 1 to TX2 2 are respectively provided on the light incident surface 1FT via the insulating layer 1E.
- the first gate electrode TX1 1, in the first long side LS1 side are more disposed to be separated from each other along the first long side LS1, the first semiconductor region FD1 1 and photo gate electrode PG1 corresponding Arranged between.
- the first gate electrode TX1 2, in the second long side LS2 side are more disposed to be separated from each other along the second long side LS2, the first semiconductor region FD1 2 and photo gate electrode PG1 corresponding Arranged between.
- a first gate electrode TX1 1 of the first long side LS1 side, a second long side LS2 side first gate electrode TX1 2 of face each other in the X direction.
- Second gate electrode TX2 1, in the first long side LS1 side are more disposed to be separated from each other along the first long side LS1, with the corresponding second semiconductor region FD2 1 and photo gate electrode PG1 Arranged between.
- Second gate electrode TX2 2, in the second long side LS2 side are more disposed to be separated from each other along the second long side LS2, the corresponding second semiconductor region FD2 2 and photo gate electrode PG1 Arranged between.
- the first gate electrode TX1 1 and the second gate electrode TX2 are arranged alternately along the Y direction, they are separated from each other.
- a first gate electrode TX1 2 and the second gate electrode TX2 2 are arranged alternately along the Y direction, they are separated from each other.
- a second gate electrode TX2 1 of the first long side LS1 side, a second long side LS2 side of the second gate electrode TX2 2 are opposed to each other in the X direction.
- the first and second semiconductor regions FD1 1 to FD2 2 have a polygonal shape in plan view.
- the first and second semiconductor regions FD1 1 to FD2 2 have a rectangular shape (specifically, a square shape).
- the shapes of the first and second semiconductor regions FD1 1 to FD2 2 are not limited to polygonal shapes.
- the first and second semiconductor regions FD1 1 to FD2 2 accumulate charges flowing into the regions immediately below the corresponding first and second gate electrodes TX1 1 to TX2 2 , respectively.
- the first and second semiconductor regions FD1 1 and FD2 1 on the first long side LS1 side function as first side signal charge collection regions.
- the first and second semiconductor regions FD1 2 and FD2 2 on the second long side LS2 side function as second side signal charge collection regions.
- the first and second semiconductor regions FD1 1 to FD2 2 are regions made of a high impurity concentration n-type semiconductor, and are floating diffusion regions.
- Each of the first and second gate electrodes TX1 1 to TX2 2 has a polygonal shape in plan view.
- the first and second gate electrodes TX1 1 to TX2 2 each have a substantially rectangular shape (specifically, a rectangular shape with the Y direction as the long side direction).
- the shapes of the first and second gate electrodes TX1 1 to TX2 2 are not limited to polygonal shapes.
- the first gate electrodes TX1 1 and TX1 2 selectively block and release the flow of signal charges to the first semiconductor regions FD1 1 and FD1 2 based on the given detection gate signal S 1 .
- the second gate electrodes TX2 1 , TX2 2 selectively block and release the flow of signal charges to the second semiconductor regions FD2 1 , FD2 2 , respectively, based on the given detection gate signal S 2 .
- the first and second gate electrodes TX1 1 and TX2 1 on the first long side LS1 side function as first side transfer electrodes.
- the first and second gate electrodes TX1 2 and TX2 2 on the second long side LS2 side function as second side transfer electrodes.
- the first and second gate electrodes TX1 1 to TX2 2 are made of polysilicon, but may be made of other materials.
- Third semiconductor region FD3 1 is in the region of the first long side LS1 side spaced in the X direction from the light receiving region, and a plurality provided apart from each other along the first long side LS1.
- the third semiconductor regions FD3 2 are separated from each other along the second long side LS2 in the region on the second long side LS2 side that is separated from the light receiving region in the X direction, and are respectively on the corresponding first long side LS1 side. It is more disposed to face each other across the third semiconductor region FD3 1 and the light-receiving region.
- the third semiconductor region FD3 1 is arranged to be separated from the first and second semiconductor regions FD1 1 , FD2 1 in the Y direction, and the third semiconductor region FD3 2 is the first and second semiconductor regions FD1 in the Y direction. 2, FD2 2 apart from being arranged with.
- the third semiconductor region FD3 1 is arranged between all the first semiconductor regions FD1 1 and the second semiconductor region FD2 1 in the Y direction, and the third semiconductor region FD3 2 is in the Y direction. It is disposed between all of the first semiconductor region FD1 2 and the second semiconductor region FD2 2 in.
- the third semiconductor region FD3 1 may be disposed at both ends in the Y direction so as to sandwich all the first and second semiconductor regions FD1 1 and FD2 1 in the Y direction, and the third semiconductor region FD3 2
- the first and second semiconductor regions FD1 2 and FD2 2 may be disposed at both ends in the Y direction so as to sandwich the first and second semiconductor regions FD1 2 and FD2 2 in the Y direction.
- a third semiconductor region FD3 1 of the first long side LS1 side, the third second long side LS2 side to the semiconductor region FD3 2 are opposed to each other in the X direction.
- the third gate electrodes TX3 1 and TX3 2 are provided via the insulating layer 1E on the light incident surface 1FT.
- Third gate electrode TX3 1, in the first long side LS1 side are more disposed to be separated from each other along the first long side LS1, with the corresponding third semiconductor region FD3 1 and photo gate electrode PG1 Arranged between.
- Third gate electrode TX3 2, in the second long side LS2 side are more disposed to be separated from each other along the second long side LS2, the corresponding third semiconductor region FD3 2 and photo gate electrode PG1 Arranged between.
- the third gate electrode TX3 1 is disposed apart from the first and second gate electrodes TX1 1 , TX2 1 in the Y direction, and the third gate electrode TX3 2 is the first and second gate electrodes in the Y direction. They are spaced apart from TX1 2 and TX2 2 .
- the third semiconductor regions FD3 1 and FD3 2 have a polygonal shape in plan view.
- the third semiconductor regions FD3 1 and FD3 2 have a rectangular shape (specifically, a square shape).
- the shapes of the third semiconductor regions FD3 1 and FD3 2 are not limited to polygonal shapes.
- the third semiconductor regions FD3 1 and FD3 2 discharge charges flowing into the regions immediately below the corresponding third gate electrodes TX3 1 and TX3 2 , respectively.
- the third semiconductor regions FD3 1 and FD3 2 function as unnecessary charge discharging regions (unnecessary charge discharging drains), and are connected to, for example, a fixed potential.
- Third semiconductor region FD3 1 of the first long side LS1 side serves as a first window side unnecessary charge discharging region.
- the third semiconductor regions FD3 1 and FD3 2 are regions made of an n-type semiconductor with a high impurity concentration, and are floating diffusion regions.
- the third gate electrodes TX3 1 and TX3 2 have a polygonal shape in plan view.
- the third gate electrodes TX3 1 and TX3 2 have a rectangular shape (specifically, a rectangular shape having the Y direction as the long side direction).
- the shapes of the third gate electrodes TX3 1 and TX3 2 are not limited to polygonal shapes.
- Third gate electrode TX3 1 of the first long side LS1 side serves as a first window side unnecessary charge discharging gate electrode.
- the second long side LS2 side third gate electrode TX3 2 of functions as the second window side unnecessary charge discharging gate electrode.
- the third gate electrodes TX3 1 and TX3 2 are made of polysilicon, but may be made of other materials.
- the fourth semiconductor region SR1 is disposed between the first long side LS1 and the second long side LS2 in the region immediately below the photogate electrode PG1.
- the fourth semiconductor region SR1 has a rectangular shape with the Y direction being the long side direction in plan view.
- the fourth semiconductor region SR1 extends along the Y direction so as to connect the first short side SS1 and the second short side SS2 in the central portion between the first long side LS1 and the second long side LS2. ing.
- the fourth semiconductor region SR1 is a region having the same conductivity type as the semiconductor substrate 1A and having a higher impurity concentration than the second substrate region 1Ab, that is, a high impurity concentration p-type semiconductor.
- the fourth semiconductor region SR1 may be a p-type well region or a p-type diffusion region.
- Fifth semiconductor region SR2 1 is in the region of the first long side LS1 side spaced in the X direction from the light receiving regions are disposed so as to extend along the first long side LS1.
- the fifth semiconductor regions SR2 1 and SR2 2 have a rectangular shape with the Y direction being the long side direction in plan view.
- Fifth semiconductor region SR2 1 is arranged along the long side of the distance sensor P1 in the first long side LS1 side, in plan view, first to the first long side LS1 side third semiconductor regions FD1 1 - FD3 has one and overlapping parts.
- Fifth semiconductor region SR2 2 is arranged along the long side of the distance sensor P1 in the second long side LS2 side, in plan view, the second long side LS2 side first to third semiconductor regions FD1 2 ⁇ of and a FD3 2 and overlapping portions.
- the fifth semiconductor regions SR2 1 and 2 2 are regions of the same conductivity type as the semiconductor substrate 1A and having a higher impurity concentration than the second substrate region 1Ab, that is, a high impurity concentration p-type semiconductor.
- the fifth semiconductor regions SR2 1 and 2 2 may be p-type well regions or p-type diffusion regions. Note that the fifth semiconductor regions SR2 1 and 2 2 may not be provided.
- the thickness / impurity concentration of each region is as follows.
- First substrate region 1Aa of semiconductor substrate 1A thickness 5 to 700 ⁇ m / impurity concentration 1 ⁇ 10 18 to 10 20 cm ⁇ 3
- Second substrate region 1Ab of semiconductor substrate 1A thickness 3 to 50 ⁇ m / impurity concentration 1 ⁇ 10 13 to 10 16 cm ⁇ 3
- First semiconductor regions FD1 1 and FD1 2 thickness 0.1 to 0.4 ⁇ m / impurity concentration 1 ⁇ 10 18 to 10 20 cm ⁇ 3
- Second semiconductor regions FD2 1 , FD2 2 thickness 0.1 to 0.4 ⁇ m / impurity concentration 1 ⁇ 10 18 to 10 20 cm ⁇ 3
- Third semiconductor regions FD3 1 , FD3 2 thickness 0.1 to 0.4 ⁇ m / impurity concentration 1 ⁇ 10 18 to 10 20 cm ⁇ 3
- Fourth semiconductor region SR1 thickness 1 to 5 ⁇ m / impurity concentration 1 ⁇ 10 16 to 10 18 cm ⁇ 3
- the insulating layer 1E is provided with contact holes (not shown) for exposing the surfaces of the first to third semiconductor regions FD1 1 to FD3 2 .
- a conductor (not shown) for connecting the first to third semiconductor regions FD1 1 to FD3 2 to the outside is disposed in the contact hole.
- the first gate electrodes TX1 1 and TX1 2 cause signal charges to flow into the first semiconductor regions FD1 1 and FD1 2 in accordance with the input signal.
- An n-type semiconductor includes a positively ionized donor, has a positive potential, and attracts electrons.
- a low-level signal e.g., ground potential
- the second gate electrodes TX2 1 , TX2 2 cause signal charges to flow into the second semiconductor regions FD2 1 , FD2 2 according to the input signal.
- Detection pulse light L D from the object incident from the light incident surface 1FT of the semiconductor substrate 1A leads to the light receiving region provided on the surface side of the semiconductor substrate 1A (charge-generation region). Charges generated in the semiconductor substrate 1A in accordance with the incidence of the detection pulse light L D is a charge generation region, the first gate electrode TX1 1 adjacent to the charge generation region, TX1 2 or the second gate electrode TX2 1, TX2 2 Sent to the area directly below.
- the second gate electrode TX2 1, TX2 2 to give the detection gate signal S 2 pulse drive signal S P and the detection gate signals S 1 and the different phases of a light source through the wiring board 10 generated in the charge generation region Charges flow into regions immediately below the second gate electrodes TX2 1 and TX2 2 , respectively, and flow into the second semiconductor regions FD2 1 and FD2 2 from these.
- the distance image sensor 1 includes a back gate semiconductor region for fixing the potential of the semiconductor substrate 1A to a reference potential.
- FIG. 8 and 9 are diagrams showing potential distributions for explaining the charge accumulation operation.
- FIG. 10 is a diagram showing a potential distribution for explaining the charge discharging operation.
- 8A to 10A show the potential distribution in the cross section along the line VV in FIG. 4
- FIGS. 8B to 10B show the potential distribution along the line VI-VI in FIG.
- FIG. 8 to FIG. 10C are potential distributions in the cross section along the line VII-VII in FIG.
- the potential ⁇ PG1 is set slightly higher than the substrate potential.
- a charge generation region (the region immediately below the photogate electrode PG1)
- the charges generated in ( 1 ) are accumulated in the potential wells of the first semiconductor regions FD1 1 and FD1 2 through the region immediately below the first gate electrodes TX1 1 and TX1 2 according to the potential gradient.
- a voltage output Vout1 corresponding to the accumulated charge amount Q1 is read from the first semiconductor regions FD1 1 and FD1 2 .
- the voltage output V out1 corresponds to the signal d 1 described above.
- the potential ⁇ SR1 of the fourth semiconductor region SR1 located in the central portion in the X direction is higher than the potential ⁇ PG1 on the first long side LS1 side and the second long side LS2 side. It has become. Therefore, a high potential region extending in the Y direction is formed between the first long side LS1 and the second long side LS2 in the region immediately below the photogate electrode PG1, and the first long side LS1 is extended from the fourth semiconductor region SR1. And a much larger gradient of potential that decreases toward the second long side LS2 is formed.
- the detection gate signal S 1 is applied to the first gate electrode TX1 1, TX1 2, the second gate electrode TX2 1, TX2 2 and the A low level potential (for example, a ground potential) is applied to the three gate electrodes TX3 1 and TX3 2 .
- the potentials ⁇ TX2 1 and TX2 2 and the potentials ⁇ TX3 1 and TX3 2 do not drop, and no charge flows into the potential wells of the second semiconductor regions FD2 1 and FD2 2 and the third semiconductor regions FD3 1 and FD3 2. .
- the charges generated in the charge generation region according to potential gradient
- it is accumulated in the potential well of the second semiconductor regions FD2 1 and FD2 2 via the region immediately below the second gate electrodes TX2 1 and TX2 2 .
- the second semiconductor region FD2 1, FD2 in 2 potential well, in accordance with the pulse timing of the detection gate signal S 2, the charge amount Q2 are accumulated.
- the voltage output V out2 corresponding to the accumulated charge amount Q2 is read from the second semiconductor regions FD2 1 and FD2 2 .
- the voltage output V out2 corresponds to the signal d 2 described above.
- the charges generated in the charge generation region depending on the gradient of the potential formed by the fourth semiconductor regions SR1, the first long side LS1 side second semiconductor region FD2 1 and a second long side LS2 side second semiconductor move quickly towards the region FD2 2.
- high potential of the discharge gate signal S 3 is inputted to the third gate electrode TX3 1, TX3 2, as shown in FIG. 10 (c)
- charges generated in the charge generation region in accordance with the potential gradient is inputted to the third gate electrode TX3 1, TX3 2, as shown in FIG. 10 (c)
- charges generated in the charge generation region in accordance with the potential gradient is inputted to the third gate electrode TX3 1, TX3 2, as shown in FIG. 10 (c)
- charges generated in the charge generation region in accordance with the potential gradient Then, it flows as unnecessary charges into the potential wells of the third semiconductor regions FD3 1 and FD3 2 via the region immediately below the third gate electrodes TX3 1 and TX3 2 .
- Unnecessary charges that have flowed into the potential wells of the third semiconductor regions FD3 1 and FD3 2 are discharged to the outside.
- FIG. 11 is a timing chart of various signals.
- the period of one frame includes a period for accumulating signal charges (accumulation period) and a period for reading signal charges (readout period). Focusing on one of the distance sensors P1, the accumulation period, the signal based on the pulse drive signal S P is applied to the light source, in synchronization with this, the detection gate signal S 1 is the first gate electrode TX1 1, TX1 2 To be applied. Subsequently, the detection gate signal S 2, a predetermined phase difference detection gate signal S 1 (e.g., a phase difference of 180 degrees) is applied to the second gate electrode TX2 1, TX2 2 in.
- a predetermined phase difference detection gate signal S 1 e.g., a phase difference of 180 degrees
- the first and second gate electrodes TX1 1 of the first long side LS1 side, TX2 1 different along with the charge transfer signal of the phase is given
- the second long side LS2 side first and second gate electrodes TX1 2 of TX2 different phase charge transfer signal 2 is given.
- a reset signal is applied to the first and second semiconductor regions FD1 1 to FD2 2 and the charges accumulated inside are discharged to the outside.
- the pulse of the detection gate signal S 1, S 2 are sequentially applied to the first and second gate electrodes TX1 1 ⁇ TX2 2, the charge transfer is performed.
- the signal charges are accumulated and accumulated in the first and second semiconductor regions FD1 1 to FD2 2 .
- the potential V PG applied to the photogate electrode PG1 is set lower than the potentials VTX1 1 , TX1 2 , VTX2 1 , TX2 2 , VTX3 1 , TX3 2 .
- the detection gate signals S 1 and S 2 become high level, the potentials ⁇ TX1 1 , ⁇ TX1 2 , ⁇ TX2 1 , and ⁇ TX2 2 become lower than the potential ⁇ PG1.
- the discharge gate signal S 3 becomes high level, the potential ⁇ TX3 1, ⁇ TX3 2 becomes lower than the potential FaiPG1.
- the potential V PG is set higher than the potential when the detection gate signals S 1 and S 2 and the discharge gate signal S 3 are at a low level.
- the detection gate signals S 1 and S 2 become low level, the potentials ⁇ TX1 1 , ⁇ TX1 2 , ⁇ TX2 1 , and ⁇ TX2 2 become higher than the potential ⁇ PG1.
- the discharge gate signal S3 becomes low level, the potentials ⁇ TX3 1 and ⁇ TX3 2 become higher than the potential ⁇ PG1.
- Pulse signal S P the pulse width of S 1, S 2, S D is assumed to be T P.
- Detection gate signals S 1 synchronized with the pulse drive signal S P is a high level, when the pulse detection signal S D is high level, the distance sensor the amount of charge generated in the P1 (first semiconductor region FD1 1 , FD1 2 ) is Q1.
- Detection gate signal S 2 having a phase difference of 180 degrees to the pulse drive signal S P is at the high level, the charge amount the pulse detection signal S D is at a high level, generated by the distance sensor within P1 ( The amount of charge accumulated in the second semiconductor regions FD2 1 and FD2 2 is Q2.
- Phase difference detection gate signals S 1 and the pulse detection signal S D (phase difference between the emitted pulse light L P and the detection pulse light L D) is proportional to the charge amount Q2 described above.
- the pulse detection signal S D is delayed with respect to pulse drive signal S P.
- the arithmetic circuit 5 can calculate the distance d.
- the aforementioned pulse is repeatedly emitted, and the integrated value can be output as the charge amounts Q1 and Q2.
- the ratio of the charge amounts Q1 and Q2 to the total charge amount corresponds to the above-described phase difference, that is, the distance to the object H.
- the arithmetic circuit 5 calculates the distance to the object H according to this phase difference.
- Appropriate correction calculations may be added to this calculation. For example, when the actual distance is different from the calculated distance d, a coefficient ⁇ for correcting the latter is obtained in advance, and the product after shipping is obtained by multiplying the calculated distance d by the coefficient ⁇ .
- the calculation distance d may be used.
- the distance calculation can be performed after performing the calculation for correcting the light speed c.
- the relationship between the signal input to the arithmetic circuit and the actual distance may be stored in advance in the memory, and the distance may be calculated by a lookup table method.
- the calculation method can also be changed depending on the sensor structure, and a conventionally known calculation method can be used for this.
- a high potential is generated in the region immediately below the fourth semiconductor region SR1 located between the first long side LS1 and the second long side LS2 of the light receiving region. Then, a potential gradient is formed toward the first long side LS1 and the second long side LS2. For this reason, among the signal charges generated in response to the incident light, the signal charges generated in the region immediately below the portion on the first long side LS1 side of the photogate electrode PG1 are accelerated toward the first long side LS1, The signal charge generated in the region immediately below the portion on the second long side LS2 side of the photogate electrode PG1 is accelerated toward the second long side LS2. Therefore, the transfer rate can be improved.
- a high potential is generated between the first long side LS1 and the second long side LS2, and a potential gradient is formed toward both the first long side LS1 and the second long side LS2.
- the first and second gate electrodes TX1 and TX2 are arranged along only one of the first and second long sides LS1 and LS2, and directed from the other of the first and second long sides LS1 and LS2 to one side. As a result, the moving distance of the signal charge is shorter than when a potential gradient is formed. Therefore, the transfer rate can be improved.
- the fourth semiconductor region SR1 which is a potential adjusting means, is formed by a region immediately below the first long side LS1 side portion of the photogate electrode PG1 and a region immediately below the second long side LS2 side portion of the photogate electrode PG1. Since it is shared, the use efficiency of the area is improved. Therefore, the aperture ratio can be improved.
- the plurality of first side transfer electrodes (TX1 1 , TX2 1 ) are supplied with charge transfer signals S 1 , S 2 having different phases, and the plurality of second side transfer electrodes (TX1 2 , TX2 2 ). also, the charge transfer signals S 1 of the above different phases, S 2 is input, be given any of the charge transfer signal of the charge transfer signals S 1, S 2 is the second photo gate electrode PG1 It is possible to capture signal charges generated both in the region immediately below the portion on the one long side LS1 side and in the region directly below the portion on the second long side LS2 side of the photogate electrode PG1. Therefore, the signal charge is not missed, and the transfer accuracy can be improved.
- the plurality of first side transfer electrodes (TX1 1 , TX2 1 ) are supplied with charge transfer signals S 1 , S 2 having different phases, and the plurality of second side transfer electrodes (TX1 2 , TX2 2 ).
- the charge transfer signals S 1 and S 2 having different phases are input, only one phase charge transfer signal is input to the first side transfer electrode and the second side transfer electrode. Compared to the case, the influence of manufacturing variations in the X direction in which the first long side LS1 and the second long side LS2 face each other can be reduced. Therefore, the transfer accuracy can be improved.
- the distance sensor P1 includes the third semiconductor regions FD3 1 , FD3 2 and the third gate electrodes TX3 1 , TX3 2 on the first long side LS1 side and the second long side LS2 side, respectively. And the transfer accuracy can be improved.
- the light receiving region has a first region and a second region
- the potential adjusting means is the fourth semiconductor region SR1 having a high impurity concentration disposed between the first region and the second region. High potential can be generated with a simple configuration.
- FIG. 12 is a plan view showing a part of a distance sensor according to another embodiment.
- the third semiconductor regions FD3 1 and FD3 2 and the third gate electrodes TX3 1 and TX3 are compared with the above-described distance sensor P1 (see FIG. 4). The difference is that the number of 2 is small.
- the third semiconductor region FD3 1 is disposed between every other first semiconductor region FD1 1 and second semiconductor region FD2 1 in the Y direction, and the third semiconductor region FD3 2 It is disposed between the first semiconductor region FD1 2 every other with the second semiconductor region FD2 2 in the Y direction.
- the third semiconductor regions FD3 1 and FD3 2 may be disposed at both ends in the Y direction.
- the third gate electrode TX3 1 is disposed between every other first gate electrode TX1 1 and second gate electrode TX2 1 in the Y direction, and one third gate electrode TX3 2 is provided in the Y direction. It is disposed between the first gate electrode TX1 2 every other and the second gate electrode TX2 2.
- the transfer rate can be improved. it can.
- the fourth semiconductor region SR1 which is a potential adjusting means, is formed by a region immediately below the first long side LS1 side portion of the photogate electrode PG1 and a region immediately below the second long side LS2 side portion of the photogate electrode PG1. Since it is shared, the use efficiency of the area is improved. Therefore, the aperture ratio can be improved.
- the plurality of first side transfer electrodes (TX1 1 , TX2 1 ) are supplied with charge transfer signals S 1 , S 2 having different phases, and the plurality of second side transfer electrodes (TX1 2 , TX2 2 ).
- the charge transfer signals S 1 and S 2 having different phases are input, the signal charge is not missed and the influence of manufacturing variations in the X direction is reduced. Therefore, the transfer accuracy can be improved.
- the distance sensor P2 includes the third semiconductor regions FD3 1 , FD3 2 and the third gate electrodes TX3 1 , TX3 2 on the first long side LS1 side and the second long side LS2 side, respectively. Can be discharged. Therefore, the transfer accuracy can be improved.
- the light receiving region has a first region and a second region
- the potential adjusting means is the fourth semiconductor region SR1 having a high impurity concentration disposed between the first region and the second region. High potential can be generated with a simple configuration.
- FIG. 13 is a plan view showing a part of a distance sensor according to still another embodiment.
- the distance sensor P3 has third semiconductor regions FD3 1 , FD3 2 and third gate electrodes TX3 1 , TX3 compared to the above-described distance sensor P1 (see FIG. 4). It is different in that it does not have 2 .
- the transfer rate can be improved. it can.
- the fourth semiconductor region SR1 which is a potential adjusting means, is formed by a region immediately below the first long side LS1 side portion of the photogate electrode PG1 and a region immediately below the second long side LS2 side portion of the photogate electrode PG1. Since it is shared, the use efficiency of the area is improved. Therefore, the aperture ratio can be improved.
- the plurality of first side transfer electrodes (TX1 1 , TX2 1 ) are supplied with charge transfer signals S 1 , S 2 having different phases, and the plurality of second side transfer electrodes (TX1 2 , TX2 2 ).
- the charge transfer signals S 1 and S 2 having different phases are input, the signal charge is not missed and the influence of manufacturing variations in the X direction is reduced. Therefore, the transfer accuracy can be improved.
- the light receiving region has a first region and a second region
- the potential adjusting means is the fourth semiconductor region SR1 having a high impurity concentration disposed between the first region and the second region. High potential can be generated with a simple configuration.
- FIG. 14 is a plan view showing a part of a distance sensor according to still another embodiment.
- the arrangement of the semiconductor region and the electrodes is the first long side LS1 side and the second length compared to the distance sensor P1 (see FIG. 4).
- the difference lies in the difference between the side LS2 side.
- the first gate electrode TX11 1 and the second gate electrode TX2 2 to which charge transfer signals having different phases are applied face each other in the X direction, and the second gate electrode TX2 to which charge transfer signals having different phases are supplied. They are opposed to each other in one and the first gate electrode TX1 2 and the X-direction.
- the input positions of the detection gate signals S 1 and S 2 are different between the first long side LS1 side and the second long side LS2 side, respectively.
- a first semiconductor region FD1 1 and the second semiconductor region FD2 2 face each other in the X direction, a second semiconductor region FD2 1 from the first semiconductor region FD1 2 are opposed to each other in the X direction.
- the transfer rate can be improved. it can.
- the fourth semiconductor region SR1 which is a potential adjusting means, is formed by a region immediately below the first long side LS1 side portion of the photogate electrode PG1 and a region immediately below the second long side LS2 side portion of the photogate electrode PG1. Since it is shared, the use efficiency of the area is improved. Therefore, the aperture ratio can be improved.
- the plurality of first side transfer electrodes (TX1 1 , TX2 1 ) are supplied with charge transfer signals S 1 , S 2 having different phases, and the plurality of second side transfer electrodes (TX1 2 , TX2 2 ).
- the charge transfer signals S 1 and S 2 having different phases are input, the charge transfer signals having different phases are respectively input. The influence of the variation of is reduced. Therefore, the transfer accuracy can be improved.
- the distance sensor P4 includes third semiconductor regions FD3 1 , FD3 2 and third gate electrodes TX3 1 , TX3 2 on the first long side LS1 side and the second long side LS2 side, respectively. Can be discharged. Therefore, the transfer accuracy can be improved.
- the light receiving region has a first region and a second region
- the potential adjusting means is the fourth semiconductor region SR1 having a high impurity concentration disposed between the first region and the second region. High potential can be generated with a simple configuration.
- FIG. 15 is a plan view showing a part of a distance sensor according to still another embodiment.
- the arrangement of the semiconductor region and the electrodes is the first long side LS1 side and the second length compared to the distance sensor P2 (see FIG. 12).
- the difference lies in the difference between the side LS2 side.
- different phase charge transfer signal to the first gate electrode TX1 1 given of the second gate electrode TX2 2 are opposed to each other in the X direction, it is given charge transfer signals having different phases second gate electrode TX2 They are opposed to each other in one and the first gate electrode TX1 2 and the X-direction.
- the input positions of the detection gate signals S 1 and S 2 are different between the first long side LS1 side and the second long side LS2 side, respectively.
- a first semiconductor region FD1 1 and the second semiconductor region FD2 2 face each other in the X direction, a second semiconductor region FD2 1 from the first semiconductor region FD1 2 are opposed to each other in the X direction.
- the transfer rate can be improved. it can.
- the fourth semiconductor region SR1 which is a potential adjusting means, is formed by a region immediately below the first long side LS1 side portion of the photogate electrode PG1 and a region immediately below the second long side LS2 side portion of the photogate electrode PG1 Since it is shared, the use efficiency of the area is improved. Therefore, the aperture ratio can be improved.
- the plurality of first side transfer electrodes (TX1 1 , TX2 1 ) are supplied with charge transfer signals S 1 , S 2 having different phases, and the plurality of second side transfer electrodes (TX1 2 , TX2 2 ).
- the charge transfer signals S 1 and S 2 having different phases are input, the charge transfer signals having different phases are respectively input. The influence of the variation of is reduced. Therefore, the transfer accuracy can be improved.
- the light receiving region has a first region and a second region
- the potential adjusting means is the fourth semiconductor region SR1 having a high impurity concentration disposed between the first region and the second region. High potential can be generated with a simple configuration.
- FIG. 16 is a plan view showing a part of a distance sensor according to still another embodiment.
- the positions of the semiconductor region and the electrode are the first long side LS1 side and the second length compared to the above-described distance sensor P2 (see FIG. 12). The difference is that the side LS2 is shifted.
- the first and second gate electrodes TX1 1 and TX2 1 on the first long side LS1 side and the first and second gate electrodes TX1 2 and TX2 2 on the second long side LS2 side are in the Y direction.
- the positions are arranged so as to deviate from each other.
- the input positions of the detection gate signals S 1 and S 2 are different between the first long side LS1 side and the second long side LS2 side, respectively.
- the first and second semiconductor regions FD1 1 , FD2 1 on the first long side LS1 side and the first and second semiconductor regions FD1 2 , FD2 2 on the second long side LS2 side are displaced from each other in the Y direction.
- the transfer rate can be improved. it can.
- the fourth semiconductor region SR1 which is a potential adjusting means, is formed by a region immediately below the first long side LS1 side portion of the photogate electrode PG1 and a region immediately below the second long side LS2 side portion of the photogate electrode PG1. Since it is shared, the use efficiency of the area is improved. Therefore, the aperture ratio can be improved.
- the plurality of first side transfer electrodes (TX1 1 , TX2 1 ) are supplied with charge transfer signals S 1 , S 2 having different phases, and the plurality of second side transfer electrodes (TX1 2 , TX2 2 ).
- the charge transfer signals S 1 and S 2 having different phases are input, the signal charge is not missed and the influence of manufacturing variations in the X direction is reduced. Therefore, the transfer accuracy can be improved.
- the first and second gate electrodes TX1 1 , TX2 1 on the first long side LS1 side and the first and second gate electrodes TX1 2 , TX2 2 on the second long side LS2 side are the first and second long sides Since the positions are shifted from each other in the Y direction in which LS1 and LS2 extend, the input positions of the charge transfer signals having the same phase are different on the first long side LS1 side and the second long side LS2 side. For this reason, the dependence by the input position of a charge transfer signal can be canceled. Therefore, the transfer accuracy can be improved.
- the distance sensor P6 includes third semiconductor regions FD3 1 , FD3 2 and third gate electrodes TX3 1 , TX3 2 on the first long side LS1 side and the second long side LS2 side, respectively. Can be discharged. Therefore, the transfer accuracy can be improved.
- the light receiving region has a first region and a second region
- the potential adjusting means is the fourth semiconductor region SR1 having a high impurity concentration disposed between the first region and the second region. High potential can be generated with a simple configuration.
- FIG. 17 is a plan view showing a part of a distance sensor according to still another embodiment.
- the distance sensor P7 of the present embodiment has a first gate electrode TX1 instead of the first gate electrodes TX1 1 and TX1 2 as compared with the distance sensor P2 (see FIG. 12).
- the difference is that the gate electrodes TX5 1 and TX5 2 are provided.
- the first long side LS1 side it formed with a plurality pairs of fourth gate electrode TX4 1 and the fifth gate electrode TX5 1 adjacent to each other in the Y direction along the Y direction, the long side LS2 side, Y direction formed with a plurality fourth gate electrode TX4 2 and pairs of the fifth gate electrode TX5 2 along the Y direction that are adjacent to each other in the.
- a third gate electrode TX3 between pairs between the first long side LS1 side is arranged a third gate electrode TX3 1, between the pairs between the second long side LS2 side is arranged a third gate electrode TX3 2.
- the fourth and fifth gate electrodes TX4 1 to TX5 2 each have an L shape in plan view.
- the fourth and fifth gate electrodes TX4 1 to TX5 2 each have a first part TX10 and a second part TX20.
- the first portion TX10 extends along the Y direction, and has a rectangular shape with the Y direction being the long side direction in plan view.
- the second part TX20 extends in the X direction from the end on the side farther from the adjacent first part TX10 in the first part TX10, and has a rectangular shape with the X direction being the long side direction in plan view. Yes.
- the second portion TX20 has a portion that overlaps the light receiving region in plan view.
- Photo gate electrode PG1 in each long side, so as to avoid the fourth and fifth gate electrode TX4 1 ⁇ TX5 2, in plan view, and has a partially recessed.
- the second portion TX20 is surrounded by the photogate electrode PG1 in plan view. Specifically, the second portion TX20 is surrounded by the photogate electrode PG1 over three sides included in the edge of the second portion TX20.
- the region corresponding to the photogate electrode PG1 functions as a charge generation region in which charges are generated according to incident light. Since the fourth and fifth gate electrodes TX4 1 to TX5 2 are made of polysilicon, the light passes through the second part TX20 of the fourth and fifth gate electrodes TX4 1 to TX5 2 and enters the semiconductor substrate 1A. Therefore, the region immediately below the second portion TX20 in the semiconductor substrate 1A also functions as a charge generation region. For this reason, in the present embodiment, the shape of the light receiving region and the shape of the charge generation region match in plan view. The second portion TX20 is also overlapped with the charge generation region.
- the charge generation region is defined by the photogate electrode PG1, and the shape of the light receiving region and the shape of the charge generation region are It does not match.
- the transfer rate can be improved. it can.
- the fourth semiconductor region SR1 which is a potential adjusting means, is formed by a region immediately below the first long side LS1 side portion of the photogate electrode PG1 and a region immediately below the second long side LS2 side portion of the photogate electrode PG1. Since it is shared, the use efficiency of the area is improved. Therefore, the aperture ratio can be improved.
- the plurality of first side transfer electrodes (TX4 1 , TX5 1 ) are supplied with charge transfer signals S 1 and S 2 having different phases, and the plurality of second side transfer electrodes (TX4 2 , TX5 2 ).
- the charge transfer signals S 1 and S 2 having different phases are input, the signal charge is not missed and the influence of manufacturing variations in the X direction is reduced. Therefore, the transfer accuracy can be improved.
- the distance sensor P7 includes third semiconductor regions FD3 1 , FD3 2 and third gate electrodes TX3 1 , TX3 2 on the first long side LS1 side and the second long side LS2 side, respectively. Can be discharged. Therefore, the transfer accuracy can be improved.
- the light receiving region has a first region and a second region
- the potential adjusting means is the fourth semiconductor region SR1 having a high impurity concentration disposed between the first region and the second region. High potential can be generated with a simple configuration.
- a plurality of transfer electrodes of the first long side LS1 side, different phase signals is given of having a pair of fourth gate electrode TX4 1 and the fifth gate electrode TX5 1 adjacent to each other in the Y direction, the long side LS2 a plurality of transfer electrodes on the side are different phase signals is given of, in the Y direction and the fourth gate electrode TX4 2 adjacent to each other has a pair of the fifth gate electrode TX5 2, the fourth and fifth The gate electrodes TX4 1 to TX5 2 are a first portion TX10 extending along the Y direction, and a second portion extending from the end of the first portion TX10 far from the adjacent first portion TX10 so as to overlap the light receiving region. TX20.
- the potential is increased in a region immediately below the transfer electrode that does not transfer the signal charge among the pair of transfer electrodes. Therefore, in the light receiving region, a potential gradient is generated along the Y direction from a region immediately below the second portion TX20 of the transfer electrode that does not transfer the signal charge, and the signal charge moves quickly in the Y direction. Therefore, the transfer rate can be improved.
- the effect of the present embodiment is suitably exhibited.
- FIG. 18 is a plan view showing a part of a distance sensor according to still another embodiment.
- the distance sensor P8 of the present embodiment has a third gate electrode TX3 instead of the third gate electrodes TX3 1 and TX3 2 as compared to the distance sensor P2 (see FIG. 12).
- TX3 2 is different in that it has sixth gate electrodes TX6 1 , TX6 2 having different shapes.
- the sixth gate electrodes TX6 1 , TX6 2 have a T shape in plan view.
- the sixth gate electrodes TX6 1 , TX6 2 have a third part TX30 and a fourth part TX40.
- the third portion TX30 extends along the Y direction, and has a rectangular shape with the Y direction being the long side direction in plan view.
- the fourth portion TX40 extends from the central portion in the Y direction along the X direction, and has a rectangular shape in which the X direction is the long side direction in plan view.
- the fourth portion TX40 has a portion that overlaps the light receiving region in plan view.
- the photogate electrode PG1 has a shape in which a part of the photogate electrode PG1 is depressed in plan view so as to avoid the fourth portion TX40 of the sixth gate electrodes TX6 1 and TX6 2 on each long side.
- the fourth portion TX40 is surrounded by the photogate electrode PG1 in plan view. Specifically, the fourth portion TX40 is surrounded by the photogate electrode PG1 over three sides included in the edge of the fourth portion TX40.
- the region corresponding to the photogate electrode PG1 functions as a charge generation region in which charges are generated according to incident light.
- the sixth gate electrodes TX6 1 and TX6 2 are made of polysilicon, the light passes through the fourth portions TX40 of the sixth gate electrodes TX6 1 and TX6 2 and enters the semiconductor substrate 1A. Therefore, the region immediately below the fourth portion TX40 in the semiconductor substrate 1A also functions as a charge generation region. For this reason, in the present embodiment, the shape of the light receiving region and the shape of the charge generation region match in plan view.
- the fourth portion TX40 is also overlapped with the charge generation region.
- the transfer rate can be improved. it can.
- the fourth semiconductor region SR1 which is a potential adjusting means, is formed by a region immediately below the first long side LS1 side portion of the photogate electrode PG1 and a region immediately below the second long side LS2 side portion of the photogate electrode PG1. Since it is shared, the use efficiency of the area is improved. Therefore, the aperture ratio can be improved.
- the plurality of first side transfer electrodes (TX1 1 , TX2 1 ) are supplied with charge transfer signals S 1 , S 2 having different phases, and the plurality of second side transfer electrodes (TX1 2 , TX2 2 ).
- the charge transfer signals S 1 and S 2 having different phases are input, the signal charge is not missed and the influence of manufacturing variations in the X direction is reduced. Therefore, the transfer accuracy can be improved.
- the distance sensor P8 includes third semiconductor regions FD3 1 , FD3 2 and sixth gate electrodes TX6 1 , TX6 2 on the first long side LS1 side and the second long side LS2 side, respectively. Can be discharged. Therefore, the transfer accuracy can be improved.
- the sixth gate electrodes TX6 1 , TX6 2 include a third portion TX30 extending along the Y direction in which the first and second long sides LS1, LS2 extend, and a fourth portion extending from the third portion TX30 so as to overlap the light receiving region. TX40.
- the potential is enhanced in the region immediately below the sixth gate electrodes TX6 1 and TX6 2 . Therefore, in the light receiving region, a potential gradient is generated along the Y direction from the region immediately below the fourth portion TX40 of the sixth gate electrodes TX6 1 , TX62 2 to the periphery, and the signal charge is rapidly transferred in the Y direction. Moving. Therefore, the transfer rate can be improved.
- the effect of the present embodiment is suitably exhibited.
- the light receiving region has a first region and a second region
- the potential adjusting means is the fourth semiconductor region SR1 having a high impurity concentration disposed between the first region and the second region. High potential can be generated with a simple configuration.
- FIG. 19 is a plan view showing a part of a distance sensor according to still another embodiment.
- the distance sensor P9 of the present embodiment is different in configuration from the fourth semiconductor region SR1 in place of the fourth semiconductor region SR1 as compared to the above-described distance sensor P2 (see FIG. 12).
- the difference is that the sixth semiconductor region SR3 is provided.
- a plurality of sixth semiconductor regions SR3 are arranged apart from each other along the Y direction between the first region on the first long side LS1 side and the second region on the second long side LS2 side in the light receiving region.
- the sixth semiconductor region SR3 has a rectangular shape in plan view (specifically, a rectangular shape whose X direction is the long side direction).
- the first region and the second region of the light receiving region are connected between the sixth semiconductor regions SR3 and SR3 in the Y direction.
- FIG. 20 is a diagram showing a potential distribution in a cross section along the line XX-XX in FIG.
- the potential of the central portion in the X direction is the potential ⁇ SR3 in the region immediately below the sixth semiconductor region SR3, and is on the first long side LS1 side and the second long side LS2 side. It is higher than the potential ⁇ PG1.
- the potential between the sixth semiconductor regions SR3 and SR3 is also higher than the potential ⁇ PG1 on the first long side LS1 side and the second long side LS2 side due to the influence of the potential ⁇ SR3 in the region immediately below the sixth semiconductor region SR3. ing.
- a high potential region extending in the Y direction is formed between the first long side LS1 and the second long side LS2 in the region immediately below the photogate electrode PG1, and the second potential from the region immediately below the sixth semiconductor region SR3 is A larger gradient of potential that decreases toward the first long side LS1 and the second long side LS2 is formed.
- the transfer rate is improved. Can do.
- the sixth semiconductor region SR3 which is a potential adjusting means, is formed by a region immediately below the first long side LS1 side portion of the photogate electrode PG1 and a region immediately below the second long side LS2 side portion of the photogate electrode PG1. Since it is shared, the use efficiency of the area is improved. Therefore, the aperture ratio can be improved.
- the plurality of first side transfer electrodes (TX1 1 , TX2 1 ) are supplied with charge transfer signals S 1 , S 2 having different phases, and the plurality of second side transfer electrodes (TX1 2 , TX2 2 ).
- the charge transfer signals S 1 and S 2 having different phases are input, the signal charge is not missed and the influence of manufacturing variations in the X direction is reduced. Therefore, the transfer accuracy can be improved.
- the distance sensor P9 includes third semiconductor regions FD3 1 , FD3 2 and third gate electrodes TX3 1 , TX3 2 on the first long side LS1 side and the second long side LS2 side, respectively. Can be discharged. Therefore, the transfer accuracy can be improved.
- the light receiving region has a first region and a second region
- the potential adjusting means is the sixth semiconductor region SR3 having a high impurity concentration disposed between the first region and the second region. High potential can be generated with a simple configuration.
- FIG. 21 is a plan view showing a part of a distance sensor according to still another embodiment.
- 22 is a cross-sectional view taken along line XXII-XXII in FIG.
- the distance sensor P10 of the present embodiment has a light receiving region configuration (configuration of the opening LIa of the light shielding layer LI) and a photo as compared with the above-described distance sensor P1 (see FIG. 4).
- the configuration of the gate electrode PG1 is different.
- each opening LIa of the light shielding layer LI is provided apart from each other in the X direction so that the light receiving region does not include the fourth semiconductor region SR1.
- Each opening LIa has a rectangular shape whose long side is the Y direction.
- the light receiving area is defined in the semiconductor substrate 1A by the two openings LIa.
- the light receiving area corresponds to the shape of the two openings LIa and is divided into two in the X direction. Each part of the divided light receiving area has a rectangular shape with the Y direction as the long side direction.
- One side (left side in FIGS. 21 and 22) of the light receiving region has a first long side LS1 and a third long side LS3 that face each other in the X direction and extend in the Y direction.
- the other side portion of the light receiving region has a second long side LS2 and a fourth long side LS4 that face each other in the X direction and extend in the Y direction.
- the lengths of the first to fourth long sides LS1 to LS4 are longer than the distance between the first long side LS1 and the second long side LS2.
- the photogate electrode PG1 is arranged corresponding to the two openings LIa and is divided into two in the X direction. That is, the photogate electrode PG1 is not disposed on the fourth semiconductor region SR1. Each portion of the divided photogate electrode PG1 corresponds to the shape of the opening LIa, and has a rectangular shape whose Y direction is the long side direction.
- the fifth semiconductor region SR2 is not provided.
- the potential in the region immediately below the fourth semiconductor region SR1 is higher than the potential on the first long side LS1 side and the second long side LS2 side. Accordingly, a high potential region extending in the Y direction is formed in the fourth semiconductor region SR1 between the first long side LS1 and the second long side LS2, and the first long side LS1 and the first long side LS1 from the region immediately below the fourth semiconductor region SR1 are formed. A larger gradient of potential that decreases toward the second long side LS2 is formed.
- the transfer rate can be improved. it can.
- the fourth semiconductor region SR1 which is a potential adjusting means, is formed by a region immediately below the first long side LS1 side portion of the photogate electrode PG1 and a region immediately below the second long side LS2 side portion of the photogate electrode PG1. Since it is shared, the use efficiency of the area is improved. Therefore, the aperture ratio can be improved.
- the plurality of first side transfer electrodes (TX1 1 , TX2 1 ) are supplied with charge transfer signals S 1 , S 2 having different phases, and the plurality of second side transfer electrodes (TX1 2 , TX2 2 ).
- the charge transfer signals S 1 and S 2 having different phases are input, the signal charge is not missed and the influence of manufacturing variations in the X direction is reduced. Therefore, the transfer accuracy can be improved.
- the distance sensor P10 includes third semiconductor regions FD3 1 , FD3 2 and third gate electrodes TX3 1 , TX3 2 on the first long side LS1 side and the second long side LS2 side, respectively. Can be discharged. Therefore, the transfer accuracy can be improved.
- the light receiving region has a first region and a second region
- the potential adjusting means is the fourth semiconductor region SR1 having a high impurity concentration disposed between the first region and the second region. High potential can be generated with a simple configuration.
- FIG. 23 is a plan view showing a part of a distance sensor according to still another embodiment.
- FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG.
- the distance sensor P11 of the present embodiment is different from the above-described distance sensor P1 (see FIG. 4) in that the configuration of the potential adjusting means is different. Specifically, the distance sensor P11 and the distance sensor P1 are different in the configuration of the photogate electrode PG1, further provided with a potential adjustment electrode PG2, and not provided with the fourth semiconductor region SR1. Is different.
- the photogate electrode PG1 is divided into two in the X direction. Each portion of the divided photogate electrode PG1 has a rectangular shape whose Y direction is the long side direction. A portion of the divided photogate electrode PG1 on the first long side LS1 side functions as a first electrode portion. A portion of the divided photogate electrode PG1 on the second long side LS2 side functions as a second electrode portion.
- the potential adjustment electrode PG2 is provided on the light incident surface 1FT via the insulating layer 1E.
- the potential adjustment electrode PG2 is disposed between the first electrode portion and the second electrode portion of the photogate electrode PG1 so as to be separated from them. That is, the potential adjustment electrode PG2 is electrically separated from the first electrode portion and the second electrode portion of the photogate electrode PG1.
- the potential adjustment electrode PG2 has a rectangular shape with the Y direction being the long side direction in plan view.
- the potential adjustment electrode PG2 is made of polysilicon, but may be made of other materials.
- a potential lower than the potential applied to the photogate electrode PG1 is applied to the potential adjustment electrode PG2.
- the potential in the region immediately below the potential adjustment electrode PG2 is higher than the potential on the first long side LS1 side and the second long side LS2 side (potential in the region immediately below the photogate electrode PG1).
- a high potential region extending in the Y direction is formed in a region immediately below the potential adjustment electrode PG2 between the first long side LS1 and the second long side LS2, and the first long side extends from the region immediately below the potential adjustment electrode PG2.
- An even greater gradient of potential is formed which decreases towards LS1 and the second long side LS2.
- the fifth semiconductor region SR2 is not provided.
- the transfer rate can be improved. .
- the potential adjustment electrode PG2 which is potential adjustment means, is shared by the region immediately below the first long side LS1 side portion of the photogate electrode PG1 and the region immediately below the second long side LS2 side portion of the photogate electrode PG1. Therefore, the use efficiency of the area is improved. Therefore, the aperture ratio can be improved.
- the plurality of first side transfer electrodes (TX1 1 , TX2 1 ) are supplied with charge transfer signals S 1 , S 2 having different phases, and the plurality of second side transfer electrodes (TX1 2 , TX2 2 ).
- the charge transfer signals S 1 and S 2 having different phases are input, the signal charge is not missed and the influence of manufacturing variations in the X direction is reduced. Therefore, the transfer accuracy can be improved.
- the distance sensor P11 includes third semiconductor regions FD3 1 , FD3 2 and third gate electrodes TX3 1 , TX3 2 on the first long side LS1 side and the second long side LS2 side, respectively. Can be discharged. Therefore, the transfer accuracy can be improved.
- the photogate electrode PG1 is a first electrode portion in the X direction in which the first long side LS1 and the second long side LS2 face each other on the first long side LS1 side region in the light receiving region. And a second electrode portion disposed on the second long side region in the light receiving region.
- the potential adjusting means is disposed between the first electrode portion and the second electrode portion so as to be electrically separated from the first and second electrode portions and has a potential lower than the potential applied to the photogate electrode PG1. This is a potential adjustment electrode PG2 to be provided. For this reason, by adjusting the potentials applied to the photogate electrode PG1 and the potential adjustment electrode PG2, the amount of potential gradient can be suitably adjusted.
- the distance image sensor 1 is not limited to the surface incident type distance image sensor.
- the distance image sensor 1 may be a back-illuminated distance image sensor.
- the charge generation region in which charge is generated in response to incident light may be configured by a photodiode (for example, an embedded photodiode).
- the distance image sensor 1 is not limited to the one in which the distance sensors P1 to P10 are arranged one-dimensionally, but may be one in which the distance sensors P1 to P10 are arranged two-dimensionally.
- the p-type and n-type conductivity types in the distance image sensor 1 according to the present embodiment may be switched so as to be opposite to those described above.
- the present invention can be used for, for example, a product monitor in a factory production line, a distance sensor mounted on a vehicle, a distance image sensor, or the like.
- SYMBOLS 1 Distance image sensor, FD1 1 to FD3 2 ... First to third semiconductor regions, LS1 ... First long side of light receiving region, LS2 ... Second long side of light receiving region, P1 to P10 ... Distance sensor, PG1 ... Photo Gate electrode, PG2 ... potential adjustment electrode, SR1 ... fourth semiconductor region, SR3 ... sixth semiconductor region, TX1 1 to TX6 2 ... first to sixth gate electrodes.
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Abstract
Description
半導体基板1Aの第一基板領域1Aa:厚さ5~700μm/不純物濃度1×1018~1020cm-3
半導体基板1Aの第二基板領域1Ab:厚さ3~50μm/不純物濃度1×1013~1016cm-3
第一半導体領域FD11,FD12:厚さ0.1~0.4μm/不純物濃度1×1018~1020cm-3
第二半導体領域FD21,FD22:厚さ0.1~0.4μm/不純物濃度1×1018~1020cm-3
第三半導体領域FD31,FD32:厚さ0.1~0.4μm/不純物濃度1×1018~1020cm-3
第四半導体領域SR1:厚さ1~5μm/不純物濃度1×1016~1018cm-3
第五半導体領域SR2:厚さ1~5μm/不純物濃度1×1016~1018cm-3
Claims (10)
- 互いに対向する第一辺と第二辺とを含み、前記第一及び第二辺の長さが前記第一辺と前記第二辺との間隔よりも長い受光領域と、
前記受光領域上において、前記第一辺及び前記第二辺に沿って配置されるフォトゲート電極と、
前記受光領域の前記第一辺側において前記第一辺に沿って互いに離間して配置され、入射光に応じて発生した信号電荷を収集する複数の第一辺側信号電荷収集領域と、
前記受光領域の前記第二辺側において前記第二辺に沿って互いに離間し且つそれぞれが対応する前記第一辺側信号電荷収集領域と前記受光領域を挟んで対向して配置され、前記信号電荷を収集する複数の第二辺側信号電荷収集領域と、
異なる位相の電荷転送信号が与えられ、対応する前記第一辺側信号電荷収集領域と前記フォトゲート電極との間に配置された複数の第一辺側転送電極と、
異なる位相の前記電荷転送信号が与えられ、対応する前記第二辺側信号電荷収集領域と前記フォトゲート電極との間に配置された複数の第二辺側転送電極と、
前記第一辺と前記第二辺との間に位置し且つ前記第一及び第二辺が延びる方向に延びる領域でのポテンシャルを、該領域から前記第一辺側及び前記第二辺側に向けてポテンシャルの傾斜が形成されるように、該領域よりも前記第一辺側の領域及び前記第二辺側の領域におけるポテンシャルよりも高めるポテンシャル調整手段と、を備えている、距離センサ。 - 前記複数の第一辺側転送電極と前記複数の第二辺側転送電極とは、同じ位相の前記電荷転送信号が与えられる前記第一辺側転送電極と前記第二辺側転送電極とが、前記第一辺と前記第二辺とが対向する方向において、互いに対向するように配置されている、請求項1記載の距離センサ。
- 前記複数の第一辺側転送電極と前記複数の第二辺側転送電極とは、異なる位相の前記電荷転送信号が与えられる前記第一辺側転送電極と前記第二辺側転送電極とが、前記第一辺と前記第二辺とが対向する方向において、互いに対向するように配置されている、請求項1記載の距離センサ。
- 前記複数の第一辺側転送電極と前記複数の第二辺側転送電極とは、前記第一及び第二辺が延びる前記方向で位置が互いにずれるように配置されている、請求項1記載の距離センサ。
- 前記複数の第一辺側転送電極は、異なる位相の前記電荷転送信号が与えられ、前記第一及び第二辺が延びる前記方向において互いに隣り合う対の前記第一辺側転送電極を有し、
前記複数の第二辺側転送電極は、異なる位相の前記電荷転送信号が与えられ、前記第一及び第二辺が延びる前記方向において互いに隣り合う対の前記第二辺側転送電極を有し、
前記対の各前記第一辺側転送電極及び前記対の各前記第二辺側転送電極は、前記第一及び第二辺が延びる前記方向に沿って延びる第一部分と、前記第一部分において、隣り合う前記第一部分に対して遠い側の端部から、前記受光領域と重なるように延びる第二部分と、をそれぞれ有している、請求項1~4のいずれか一項記載の距離センサ。 - 前記受光領域の前記第一辺側において前記第一辺に沿って互いに離間すると共に前記第一辺側信号電荷収集領域と離間して配置され、発生した不要電荷を排出する第一辺側不要電荷排出領域と、
前記受光領域の前記第二辺側において前記第二辺に沿って互いに離間すると共に前記第二辺側信号電荷収集領域と離間して配置され、発生した不要電荷を排出する第二辺側不要電荷排出領域と、
前記第一辺側不要電荷排出領域と前記フォトゲート電極との間に配置され、前記第一辺側不要電荷排出領域への不要電荷の流れの遮断及び開放を選択的に行う第一辺側不要電荷排出ゲート電極と、
前記第二辺側不要電荷排出領域と前記フォトゲート電極との間に配置され、前記第二辺側不要電荷排出領域への不要電荷の流れの遮断及び開放を選択的に行う第二辺側不要電荷排出ゲート電極と、を更に備えている、請求項1~5のいずれか一項記載の距離センサ。 - 前記第一辺側不要電荷排出ゲート電極と前記第二辺側不要電荷排出ゲート電極とは、前記第一及び第二辺が延びる前記方向に沿って延びる第三部分と、前記受光領域と重なるように前記第三部分から延びる第四部分と、をそれぞれ有している、請求項6記載の距離センサ。
- 前記受光領域は、前記第一辺を含み且つ前記第一辺が延びる方向に延びる第一領域と、前記第二辺を含み且つ前記第二辺が延びる方向に延びる第二領域と、を有し、
前記ポテンシャル調整手段は、前記第一領域と前記第二領域との間に位置するように配置されると共に、前記第一及び第二領域と同じ導電型であり且つ前記第一及び第二領域よりも不純物濃度が高い半導体領域である、請求項1~7のいずれか一項記載の距離センサ。 - 前記フォトゲート電極は、前記受光領域における前記第一辺側の領域上に配置される第一電極部分と、前記第一辺と前記第二辺とが対向する方向において前記第一電極部分と離間し且つ前記受光領域における前記第二辺側の領域上に配置される第二電極部分と、を有し、
前記ポテンシャル調整手段は、前記第一電極部分と前記第二電極部分との間に前記第一及び第二電極部分と電気的に分離して配置されると共に、前記フォトゲート電極に与えられる電位よりも低い電位が与えられる電極である、請求項1~7のいずれか一項記載の距離センサ。 - 一次元状又は二次元状に配置された複数のユニットからなる撮像領域を半導体基板上に備え、前記ユニットから出力される電荷量に基づいて、距離画像を得る距離画像センサであって、
前記ユニットそれぞれが、請求項1~9のいずれか一項記載の距離センサである、距離画像センサ。
Priority Applications (4)
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CH00600/15A CH709088B1 (de) | 2012-10-26 | 2013-07-05 | Distanzsensor und Distanzbildsensor. |
US14/433,066 US9664780B2 (en) | 2012-10-26 | 2013-07-05 | Distance sensor and distance image sensor |
KR1020157001508A KR102033812B1 (ko) | 2012-10-26 | 2013-07-05 | 거리 센서 및 거리 화상 센서 |
DE112013005141.9T DE112013005141T5 (de) | 2012-10-26 | 2013-07-05 | Distanzsensor und Distanzbildsensor |
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JP2012236914A JP6010425B2 (ja) | 2012-10-26 | 2012-10-26 | 距離センサ及び距離画像センサ |
JP2012-236914 | 2012-10-26 |
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US (1) | US9664780B2 (ja) |
JP (1) | JP6010425B2 (ja) |
KR (1) | KR102033812B1 (ja) |
CH (1) | CH709088B1 (ja) |
DE (1) | DE112013005141T5 (ja) |
WO (1) | WO2014064973A1 (ja) |
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US9523765B2 (en) * | 2014-07-14 | 2016-12-20 | Omnivision Technologies, Inc. | Pixel-level oversampling for a time of flight 3D image sensor with dual range measurements |
JP6659448B2 (ja) * | 2016-05-02 | 2020-03-04 | 浜松ホトニクス株式会社 | 距離センサ及び距離センサの駆動方法 |
US10291895B2 (en) | 2016-10-25 | 2019-05-14 | Omnivision Technologies, Inc. | Time of flight photosensor |
KR20220009223A (ko) | 2020-07-15 | 2022-01-24 | 삼성전자주식회사 | 멀티-탭 구조를 갖는 거리 픽셀 및 이를 포함하는 비행 거리 센서 |
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JP2011112385A (ja) * | 2009-11-24 | 2011-06-09 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2012083221A (ja) * | 2010-10-12 | 2012-04-26 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2012083213A (ja) * | 2010-10-12 | 2012-04-26 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2012083220A (ja) * | 2010-10-12 | 2012-04-26 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
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WO2007026779A1 (ja) * | 2005-08-30 | 2007-03-08 | National University Corporation Shizuoka University | 半導体測距素子及び固体撮像装置 |
JP5283216B2 (ja) | 2008-07-31 | 2013-09-04 | 国立大学法人静岡大学 | 高速電荷転送フォトダイオード、ロックインピクセル及び固体撮像装置 |
JP5558999B2 (ja) * | 2009-11-24 | 2014-07-23 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
JP5483689B2 (ja) * | 2009-11-24 | 2014-05-07 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
KR101681198B1 (ko) | 2010-02-04 | 2016-12-01 | 삼성전자주식회사 | 센서, 이의 동작 방법, 및 상기 센서를 포함하는 데이터 처리 시스템 |
KR20110093212A (ko) | 2010-02-12 | 2011-08-18 | 삼성전자주식회사 | 이미지 센서의 픽셀 및 픽셀 동작 방법 |
JP5651982B2 (ja) * | 2010-03-31 | 2015-01-14 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、及び電子機器 |
US9134401B2 (en) * | 2012-03-27 | 2015-09-15 | Hamamatsu Photonics K. K. | Range sensor and range image sensor |
-
2012
- 2012-10-26 JP JP2012236914A patent/JP6010425B2/ja active Active
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2013
- 2013-07-05 US US14/433,066 patent/US9664780B2/en active Active
- 2013-07-05 CH CH00600/15A patent/CH709088B1/de unknown
- 2013-07-05 DE DE112013005141.9T patent/DE112013005141T5/de active Pending
- 2013-07-05 KR KR1020157001508A patent/KR102033812B1/ko active IP Right Grant
- 2013-07-05 WO PCT/JP2013/068525 patent/WO2014064973A1/ja active Application Filing
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JP2011112385A (ja) * | 2009-11-24 | 2011-06-09 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2012083221A (ja) * | 2010-10-12 | 2012-04-26 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2012083213A (ja) * | 2010-10-12 | 2012-04-26 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
JP2012083220A (ja) * | 2010-10-12 | 2012-04-26 | Hamamatsu Photonics Kk | 距離センサ及び距離画像センサ |
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DE112013005141T5 (de) | 2015-08-06 |
JP6010425B2 (ja) | 2016-10-19 |
US20150276922A1 (en) | 2015-10-01 |
JP2014085314A (ja) | 2014-05-12 |
CH709088B1 (de) | 2017-10-13 |
KR20150079545A (ko) | 2015-07-08 |
KR102033812B1 (ko) | 2019-10-17 |
US9664780B2 (en) | 2017-05-30 |
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