WO2014049154A3 - Optoelektronisches bauelement mit schutzschaltung - Google Patents
Optoelektronisches bauelement mit schutzschaltung Download PDFInfo
- Publication number
- WO2014049154A3 WO2014049154A3 PCT/EP2013/070280 EP2013070280W WO2014049154A3 WO 2014049154 A3 WO2014049154 A3 WO 2014049154A3 EP 2013070280 W EP2013070280 W EP 2013070280W WO 2014049154 A3 WO2014049154 A3 WO 2014049154A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- carrier
- optoelectronic component
- diode
- diodes
- contact areas
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 3
- 230000001681 protective effect Effects 0.000 title 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
- H05B45/54—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits in a series array of LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
- H05B45/44—Details of LED load circuits with an active control inside an LED matrix
- H05B45/48—Details of LED load circuits with an active control inside an LED matrix having LEDs organised in strings and incorporating parallel shunting devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
- H05B45/52—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits in a parallel array of LEDs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020157010586A KR101815486B1 (ko) | 2012-09-27 | 2013-09-27 | 보호 회로를 갖는 광전자 컴포넌트 |
US14/429,390 US9418972B2 (en) | 2012-09-27 | 2013-09-27 | Optoelectronic component with protective circuit |
US15/210,174 US10426006B2 (en) | 2012-09-27 | 2016-07-14 | Optoelectronic component with protective circuit |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012217523 | 2012-09-27 | ||
DE102012217523.7 | 2012-09-27 | ||
DE102012217932.1A DE102012217932B4 (de) | 2012-10-01 | 2012-10-01 | Optoelektronisches Bauelement mit Schutzschaltung |
DE102012217932.1 | 2012-10-01 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/429,390 A-371-Of-International US9418972B2 (en) | 2012-09-27 | 2013-09-27 | Optoelectronic component with protective circuit |
US15/210,174 Division US10426006B2 (en) | 2012-09-27 | 2016-07-14 | Optoelectronic component with protective circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2014049154A2 WO2014049154A2 (de) | 2014-04-03 |
WO2014049154A3 true WO2014049154A3 (de) | 2014-05-30 |
Family
ID=49354633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2013/070280 WO2014049154A2 (de) | 2012-09-27 | 2013-09-27 | Optoelektronisches bauelement mit schutzschaltung |
Country Status (3)
Country | Link |
---|---|
US (2) | US9418972B2 (de) |
KR (1) | KR101815486B1 (de) |
WO (1) | WO2014049154A2 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107248510A (zh) * | 2017-06-14 | 2017-10-13 | 厦门煜明光电有限公司 | 一种带有齐纳二极管保护的cob封装结构 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000231363A (ja) * | 1999-02-09 | 2000-08-22 | Avix Inc | Led集合ランプ回路およびマルチカラーled集合ランプ |
US20080029761A1 (en) * | 2006-08-01 | 2008-02-07 | Peng Jing | Through-hole vertical semiconductor devices or chips |
DE102009053064A1 (de) * | 2009-11-13 | 2011-05-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements |
US20120049214A1 (en) * | 2009-04-06 | 2012-03-01 | Lowes Theodore D | Monolithic Multi-Junction Light Emitting Devices Including Multiple Groups of Light Emitting Diodes |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6273958B2 (en) * | 1999-06-09 | 2001-08-14 | Applied Materials, Inc. | Substrate support for plasma processing |
US6885035B2 (en) * | 1999-12-22 | 2005-04-26 | Lumileds Lighting U.S., Llc | Multi-chip semiconductor LED assembly |
US6486499B1 (en) | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
JP3686569B2 (ja) | 2000-03-02 | 2005-08-24 | シャープ株式会社 | 半導体発光装置及びそれを用いた表示装置 |
DE10216008A1 (de) | 2001-04-12 | 2002-10-24 | Toyoda Gosei Kk | LED-Lampe |
KR101332771B1 (ko) | 2004-02-20 | 2013-11-25 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전 소자, 다수의 광전 소자를 구비한 장치 및 광전 소자를 제조하기 위한 방법 |
KR100506743B1 (ko) * | 2004-09-17 | 2005-08-08 | 삼성전기주식회사 | 트랜지스터를 구비한 플립칩 구조 발광장치용 서브 마운트 |
US20100301349A1 (en) * | 2005-01-26 | 2010-12-02 | Harvatek Corporation | Wafer level led package structure for increasing light-emitting efficiency and heat-dissipating effect and method for manufacturing the same |
KR100845856B1 (ko) | 2006-12-21 | 2008-07-14 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
TWI440210B (zh) * | 2007-01-22 | 2014-06-01 | Cree Inc | 使用發光裝置外部互連陣列之照明裝置及其製造方法 |
US20100006864A1 (en) * | 2008-07-11 | 2010-01-14 | Philips Lumileds Lighting Company, Llc | Implanted connectors in led submount for pec etching bias |
KR100999760B1 (ko) * | 2008-09-26 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
US8400064B2 (en) * | 2009-09-09 | 2013-03-19 | Koninklijke Philips Electronics N.V. | Zener diode protection network in submount for LEDs connected in series |
US20120299747A1 (en) | 2009-11-13 | 2012-11-29 | Schaeffler Technologies AG & Co. KG | Remote condition monitoring system and method |
US8415892B2 (en) * | 2009-12-04 | 2013-04-09 | Tai-Her Yang | Voltage-limiting and reverse polarity series type LED device |
KR20110130851A (ko) * | 2010-05-28 | 2011-12-06 | 삼성전자주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 및 이들의 제조 방법 |
US8354799B2 (en) | 2010-09-07 | 2013-01-15 | Monolithic Power Systems, Inc. | Bypass circuitry for serially coupled light emitting diodes and associated methods of operation |
US9153545B2 (en) * | 2010-12-20 | 2015-10-06 | Rohm Co., Ltd. | Light-emitting element unit and light-emitting element package |
DE202011001604U1 (de) | 2011-01-17 | 2011-10-20 | Tai-Her Yang | Spannungsbegrenzende und polaritätsumgekehrt reihengeschaltete Leuchtdiodenvorrichtung |
US8604491B2 (en) * | 2011-07-21 | 2013-12-10 | Tsmc Solid State Lighting Ltd. | Wafer level photonic device die structure and method of making the same |
JP6006597B2 (ja) * | 2012-02-27 | 2016-10-12 | 住友化学株式会社 | 静電噴霧装置、および配置方法 |
-
2013
- 2013-09-27 KR KR1020157010586A patent/KR101815486B1/ko active IP Right Grant
- 2013-09-27 WO PCT/EP2013/070280 patent/WO2014049154A2/de active Application Filing
- 2013-09-27 US US14/429,390 patent/US9418972B2/en active Active
-
2016
- 2016-07-14 US US15/210,174 patent/US10426006B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000231363A (ja) * | 1999-02-09 | 2000-08-22 | Avix Inc | Led集合ランプ回路およびマルチカラーled集合ランプ |
US20080029761A1 (en) * | 2006-08-01 | 2008-02-07 | Peng Jing | Through-hole vertical semiconductor devices or chips |
US20120049214A1 (en) * | 2009-04-06 | 2012-03-01 | Lowes Theodore D | Monolithic Multi-Junction Light Emitting Devices Including Multiple Groups of Light Emitting Diodes |
DE102009053064A1 (de) * | 2009-11-13 | 2011-05-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements |
Also Published As
Publication number | Publication date |
---|---|
US10426006B2 (en) | 2019-09-24 |
US20150214203A1 (en) | 2015-07-30 |
US9418972B2 (en) | 2016-08-16 |
US20160323942A1 (en) | 2016-11-03 |
WO2014049154A2 (de) | 2014-04-03 |
KR101815486B1 (ko) | 2018-01-05 |
KR20150058494A (ko) | 2015-05-28 |
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