WO2014047961A1 - 透明电极制作方法以及掩膜板 - Google Patents

透明电极制作方法以及掩膜板 Download PDF

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Publication number
WO2014047961A1
WO2014047961A1 PCT/CN2012/082625 CN2012082625W WO2014047961A1 WO 2014047961 A1 WO2014047961 A1 WO 2014047961A1 CN 2012082625 W CN2012082625 W CN 2012082625W WO 2014047961 A1 WO2014047961 A1 WO 2014047961A1
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Prior art keywords
region
pitch
transparent electrode
spacing
mask
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PCT/CN2012/082625
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English (en)
French (fr)
Inventor
陈政鸿
王醉
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深圳市华星光电技术有限公司
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Priority to DE112012006865.3T priority Critical patent/DE112012006865T5/de
Priority to US13/642,550 priority patent/US8778573B2/en
Publication of WO2014047961A1 publication Critical patent/WO2014047961A1/zh

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133388Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a transparent electrode fabrication method and a mask.
  • the transparent electrode of the substrate of the liquid crystal display is formed by first forming a film on the glass substrate and applying a photoresist on the film, and then exposing the photoresist through the mask. Due to the shielding effect of the mask, the portion corresponding to the pattern of the mask will not be exposed. During the subsequent development process, the exposed photoresist will be washed away by the developer, and during the etching process, there is The photoresist-protected film will remain, forming a pattern of transparent electrodes.
  • the transparent electrodes are mainly distributed in the display area 110 (AA, Active). Area, therefore, the display area 110 is required to retain more film than is required for the non-display area 120. Therefore, during development, the developer of the non-display area 120 is consumed more than the display area 110, so that the concentration of the developer of the non-display area 120 is lower than the concentration of the developer of the display area 110. Moreover, the diffusion effect (the low-concentration diffusion direction indicated by the arrow in the figure) causes the concentration of the developer in the edge region of the display region 110 in contact with the non-display region 120 to be lower than that of the display region 110 away from the non-display region 120.
  • the concentration of the developer in the central region causes the pitch of the photoresist pattern in the edge region to be smaller than the pitch of the photoresist pattern in the central region.
  • the same situation also occurs during the etching process, resulting in a different pitch between the transparent electrode of the edge region of the display region 110 and the transparent electrode of the central region of the display region 110, thereby affecting the display effect.
  • the technical problem to be solved by the present invention is to provide a method for fabricating a transparent electrode and a mask, which can reduce the pitch error of the transparent electrode in the entire display region after molding, thereby improving the display effect.
  • a technical solution adopted by the present invention is to provide a transparent electrode manufacturing method, which comprises the steps of: vacuum evaporation, sputtering, molecular beam evaporation or chemical vapor deposition on a glass substrate. Forming a film and coating a photoresist on the film; exposing the photoresist through a mask, wherein the mask is divided into the first region from the outside to the inside in a portion of the display region of the corresponding liquid crystal panel, a second region and a third region, wherein a pitch of a pattern corresponding to the transparent electrode in the first region is set to a first pitch, and a pitch of a pattern corresponding to the transparent electrode in the second region is set to a second pitch.
  • the first spacing is greater than the corresponding predetermined spacing, the difference between the first spacing and the corresponding predetermined spacing being greater than the difference between the second spacing and the corresponding predetermined spacing, the third region being disposed in the first region and the Between the second regions, and the pitch of the pattern corresponding to the transparent electrodes in the third region is the first pitch or the second pitch, and the proportion of the first pitch from the outside to the inside is gradually reduced. Percentage ratio of the second pitch is gradually increased; the glass substrate after the exposure is developed, etched to form a transparent electrode on the glass substrate.
  • a transparent electrode manufacturing method comprising the steps of: forming a film on a glass substrate and coating a photoresist on the film; Exposing the photoresist, wherein the mask is divided into at least a first region and a second region from the outside to the inside of the display region of the corresponding liquid crystal panel, and the corresponding pattern of the transparent electrode in the first region
  • the pitch of the pattern is set to a first pitch
  • the pitch of the pattern corresponding to the transparent electrode in the second region is set to a second pitch
  • the first pitch is greater than the corresponding predetermined pitch
  • the first pitch is between the corresponding predetermined pitch
  • the difference is greater than a difference between the second pitch and the corresponding predetermined pitch
  • the exposed glass substrate is developed and etched to form a transparent electrode on the glass substrate.
  • the mask is divided into the first area, the second area, and the third area from the outside to the inside in a portion corresponding to the display area of the liquid crystal panel, and the third area is disposed in the first area and the Between the second regions, and the pitch of the pattern corresponding to the transparent electrodes in the third region is a first pitch or a second pitch, and the proportion of the first pitch from the outside to the inside is gradually decreased and the second pitch is decreased. The proportion is gradually increasing.
  • the first area, the second area, and the third area are rectangular areas having the same aspect ratio.
  • the mask is divided into the first area, the second area, and the third area from the outside to the inside in a portion corresponding to the display area of the liquid crystal panel, and the third area is disposed in the first area and the Between the second regions, and the spacing of the patterns corresponding to the transparent electrodes in the third region from the outside to the inside is gradually reduced.
  • another technical solution adopted by the present invention is to provide a mask plate, which is divided into at least a first region and a second region from the outside to the inside in a display region portion corresponding to the liquid crystal panel. a region, wherein a pitch of a pattern corresponding to the transparent electrode in the first region is set to a first pitch, a pitch of a pattern corresponding to the transparent electrode in the second region is set to a second pitch, and the first pitch is greater than a corresponding The predetermined spacing, the difference between the first spacing and the corresponding predetermined spacing is greater than the difference between the second spacing and the corresponding predetermined spacing.
  • the mask is divided into the first area, the second area, and the third area from the outside to the inside in a portion corresponding to the display area of the liquid crystal panel, and the third area is disposed in the first area and the Between the second regions, and the pitch of the pattern corresponding to the transparent electrodes in the third region is a first pitch or a second pitch, and the proportion of the first pitch from the outside to the inside is gradually decreased and the second pitch is decreased. The proportion is gradually increasing.
  • the mask is divided into the first area, the second area, and the third area from the outside to the inside in a portion corresponding to the display area of the liquid crystal panel, and the third area is disposed in the first area and the Between the second regions, and the spacing of the patterns corresponding to the transparent electrodes in the third region from the outside to the inside is gradually reduced.
  • the invention has the beneficial effects that the present invention adopts a first region in the mask plate that is close to the non-display area and a second region that is away from the non-display area, and the pitch of the pattern in the first region is larger than the pitch of the pattern in the second region.
  • the concentration of the developing solution and the etching solution in the first region is relatively small, the spacing of the region is set to be large in advance, and the concentration of the developing solution and the etching solution in the first region is relatively large, and the spacing of the region is set in advance to be small.
  • the difference in pitch due to the difference in concentration is compensated, so that the pitch error of the transparent electrode of the entire display region after molding is reduced, thereby improving the display effect.
  • FIG. 1 is a schematic diagram showing concentration diffusion of a method for fabricating a transparent electrode in the prior art
  • FIG. 2 is a flow chart of an embodiment of a method for fabricating a transparent electrode of the present invention
  • FIG. 3 is a schematic structural view of a mask in an embodiment of a method for fabricating a transparent electrode according to the present invention
  • FIG. 4 is a schematic structural view of a mask in another embodiment of a method for fabricating a transparent electrode according to the present invention.
  • FIG. 5 is a schematic structural view of a mask in still another embodiment of a method for fabricating a transparent electrode according to the present invention.
  • FIG. 1 is a flow chart of an embodiment of a method for fabricating a transparent electrode according to the present invention.
  • the transparent electrode manufacturing method includes:
  • Step 201 Form a film on a glass substrate and apply a photoresist on the film.
  • a film is formed on the glass substrate by vacuum evaporation, sputtering, molecular beam evaporation, or chemical vapor deposition, and then the photoresist is coated on the film by a photoresist coater.
  • Step 202 Exposing the photoresist through the mask.
  • the mask is divided into at least a first region 310 and a second region 320 from the outside to the inside of the display region portion 300 of the corresponding liquid crystal panel.
  • the corresponding pattern of the transparent electrode in the first region 310 is The pitch is defined as a first pitch 312, and the pitch of the pattern corresponding to the transparent electrode in the second region 320 is defined as a second pitch 322, and the first pitch 312 is greater than a corresponding predetermined pitch, and the first pitch 312 and the corresponding predetermined pitch are The difference between the two is greater than the difference between the second spacing 322 and the corresponding predetermined spacing.
  • the predetermined pitch refers to the spacing between the desired films after development etching. In an ideal state, the spacing between the films after development etching should be consistent with the predetermined pitch.
  • Step 203 Developing and etching the exposed glass substrate.
  • the glass substrate After exposure, the glass substrate is placed in a developing solution for development to remove the photoresist that has not been exposed, and then the developed glass substrate is taken out, washed, and sent to an etching apparatus, and an etching liquid is added to remove no light. The portion of the resistor is etched away. Finally, the photoresist is stripped to form a substrate.
  • the present invention adopts a first area in the mask plate that is close to the non-display area and a second area that is away from the non-display area, and the pitch of the pattern in the first area is larger than the pitch of the pattern in the second area.
  • FIG. 4 is a schematic structural diagram of a mask in another embodiment of a method for fabricating a transparent electrode according to the present invention. Another embodiment of the method for fabricating a transparent electrode is substantially similar to the previous embodiment, except that the mask is divided into a first region 310, a second region 320, and a third from the outside to the inside of the display region portion of the corresponding liquid crystal panel.
  • the area 330, the third area 330 is disposed between the first area 310 and the second area 320, and the spacing of the patterns corresponding to the transparent electrodes in the third area 330 is the first spacing 312 or the second spacing 322, and
  • the proportion of the first pitch 312 is gradually decreased and the ratio of the second pitch 322 is gradually increased.
  • the first region 310, the second region 320, and the third region 330 are divided into rectangular regions having the same aspect ratio in units of pixel sizes.
  • the pitch of the graphics in the basic unit in the first region 310 is defined as the first pitch 312, and the pitch of the graphics in the basic unit in the second region 320 is defined as the second pitch 322.
  • the ratio of the basic unit disposed as the first pitch 312 closest to the first region 310 is close to 100%, and the ratio of the basic unit disposed as the second pitch 322 closest to the second region 320 is close to 100%.
  • the ratio of the number of basic units set to the first pitch 312 is gradually decreased, and the ratio of the number of basic units set to the second pitch 322 is gradually increased.
  • the pitch of the pattern of the third region 330 is set to the first pitch 312 or the second pitch 322, and the proportion of the first pitch 312 from the outside to the inside gradually decreases, and the proportion of the second pitch 322 gradually increases.
  • the pitch error of the transparent electrode in the entire display area after molding is reduced while avoiding excessive processing specifications, reducing the difficulty of mask processing, and improving the precision of mask processing.
  • FIG. 5 is a schematic structural view of a mask in a further embodiment of a method for fabricating a transparent electrode according to the present invention.
  • Another embodiment of the transparent electrode fabrication method is substantially similar to the previous embodiment in that the third region 530 of the mask is gradually reduced in pitch from the outer to the inner pattern.
  • the pitch between the patterns is respectively pitch 1, pitch 2, pitch 3, pitch 4, ..., and also, pitch 1 > pitch 2 > pitch 3 > pitch 4 > .
  • the present invention also provides a mask, as shown in FIG. 3 and FIG. 4 and related descriptions, and details are not described herein again.
  • the present invention also provides a transparent electrode manufacturing apparatus comprising a developing light source and a masking plate, wherein the developing light source generates developing light to pass through the masking plate, wherein the masking plate is as shown in FIGS. 3 and 4 and related descriptions. I will not repeat them here.

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  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
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Abstract

一种透明电极制作方法以及掩膜板。该方法包括如下步骤:在玻璃基板上成膜并在薄膜上涂布光阻(S201);透过掩膜板对光阻进行曝光,其中,掩膜板在对应液晶面板的显示区域部分(300)从外至内分成至少第一区域(310)及第二区域(320)两个区域,第一区域(310)中透明电极所对应的图形的间距设置为第一间距(312),第二区域(320)中透明电极所对应的图形的间距设置为第二间距(322),并且,第一间距(312)大于相应的预定间距,第一间距(312)与相应的预定间距之间的差大于第二间距(322)与相应的预定间距之间的差(S202);对曝光后的玻璃基板进行显影、刻蚀(S203)以在玻璃基板上形成透明电极。通过上述方式,能够使得成型后的整个显示区域的透明电极的间距误差减少,从而提高显示效果。

Description

透明电极制作方法以及掩膜板
【技术领域】
本发明涉及显示技术领域,特别是涉及一种透明电极制作方法以及掩膜板。
【背景技术】
现今,液晶显示器的基板的透明电极的制作工艺,是先在玻璃基板上成膜并在薄膜上涂布光阻,然后,透过掩膜板对光阻进行曝光。由于掩膜板的遮挡作用,掩膜板的图案所对应的部分将不会被曝光,在随后的显影过程中,被曝光的光阻将被显影液清洗掉,而在刻蚀过程中,有光阻保护的薄膜将保留下来,形成透明电极的图案。
但是,参阅图1,在基板中,透明电极主要分布在显示区域110(AA,Active Area),因而,显示区域110所需保留的薄膜多于非显示区域120所需保留的薄膜。因此,在显影过程中,非显示区域120的显影液消耗得比显示区域110多,使得非显示区域120的显影液的浓度低于显示区域110的显影液的浓度。而且,经过扩散作用(如图中箭头所示低浓度扩散方向),使得与非显示区域120相接的显示区域110的边缘区域的显影液的浓度低于远离非显示区域120的显示区域110的中心区域的显影液的浓度,从而导致边缘区域的光阻图形的间距小于中心区域的光阻图形的间距。同样的情况也发生在刻蚀过程中,从而导致显示区域110的边缘区域的透明电极与显示区域110的中心区域的透明电极的间距大小不一,进而影响显示效果。
【发明内容】
本发明主要解决的技术问题是提供一种透明电极制作方法以及掩膜板,能够使得成型后的整个显示区域的透明电极的间距误差减少,从而提高显示效果。
为解决上述技术问题,本发明采用的一个技术方案是:提供一种透明电极制作方法,其中,包括如下步骤:通过真空蒸镀、溅射、分子束蒸镀或化学蒸镀方法在玻璃基板上成膜并在薄膜上涂布光阻;透过掩膜板对所述光阻进行曝光,其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成所述第一区域、所述第二区域以及第三区域,所述第一区域中透明电极所对应的图形的间距设置为第一间距,所述第二区域中透明电极所对应的图形的间距设置为第二间距,第一间距大于相应的预定间距,第一间距与相应的预定间距之间的差大于第二间距与相应的预定间距之间的差,所述第三区域设置于所述第一区域与所述第二区域之间,并且,所述第三区域中透明电极所对应的图形的间距为第一间距或第二间距,并且从外至内第一间距所占的比例逐渐减少而第二间距所占的比例逐渐增大;对曝光后的所述玻璃基板进行显影、刻蚀以在所述玻璃基板上形成透明电极。
为解决上述技术问题,本发明采用的另一个技术方案是:提供一种透明电极制作方法,包括如下步骤:在玻璃基板上成膜并在薄膜上涂布光阻;透过掩膜板对所述光阻进行曝光,其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成至少第一区域及第二区域两个区域,所述第一区域中透明电极所对应的图形的间距设置为第一间距,所述第二区域中透明电极所对应的图形的间距设置为第二间距,并且,第一间距大于相应的预定间距,第一间距与相应的预定间距之间的差大于第二间距与相应的预定间距之间的差;对曝光后的所述玻璃基板进行显影、刻蚀以在所述玻璃基板上形成透明电极。
其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成所述第一区域、所述第二区域以及第三区域,所述第三区域设置于所述第一区域与所述第二区域之间,并且,所述第三区域中透明电极所对应的图形的间距为第一间距或第二间距,并且从外至内第一间距所占的比例逐渐减少而第二间距所占的比例逐渐增大。
其中,所述第一区域、所述第二区域以及所述第三区域为长宽比一样的矩形区域。
其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成所述第一区域、所述第二区域以及第三区域,所述第三区域设置于所述第一区域与所述第二区域之间,并且,从外至内所述第三区域中透明电极所对应的图形的间距逐渐减小。
为解决上述技术问题,本发明采用的又一个技术方案是:提供一种掩膜板,所述掩膜板在对应液晶面板的显示区域部分从外至内分成至少第一区域及第二区域两个区域,所述第一区域中透明电极所对应的图形的间距设置为第一间距,所述第二区域中透明电极所对应的图形的间距设置为第二间距,并且,第一间距大于相应的预定间距,第一间距与相应的预定间距之间的差大于第二间距与相应的预定间距之间的差。
其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成所述第一区域、所述第二区域以及第三区域,所述第三区域设置于所述第一区域与所述第二区域之间,并且,所述第三区域中透明电极所对应的图形的间距为第一间距或第二间距,并且从外至内第一间距所占的比例逐渐减少而第二间距所占的比例逐渐增大。
其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成所述第一区域、所述第二区域以及第三区域,所述第三区域设置于所述第一区域与所述第二区域之间,并且,从外至内所述第三区域中透明电极所对应的图形的间距逐渐减小。
本发明的有益效果是:本发明采用在掩膜板设置接近非显示区域的第一区域以及远离非显示区域的第二区域,而第一区域中图形的间距大于第二区域中图形的间距,第一区域中显影液和刻蚀液的浓度比较少,则预先设置该区域的间距较大,第一区域中显影液和刻蚀液的浓度比较大,则预先设置该区域的间距较小,从而补偿由于浓度差异所导致的间距差异,从而使得成型后的整个显示区域的透明电极的间距误差减少,从而提高显示效果。
【附图说明】
图1是现有技术一种透明电极制作方法浓度扩散示意图;
图2是本发明透明电极制作方法一实施方式的流程图;
图3是本发明透明电极制作方法一实施方式中掩膜板的结构示意图;
图4是本发明透明电极制作方法另一实施方式中掩膜板的结构示意图;
图5是本发明透明电极制作方法再一实施方式中掩膜板的结构示意图。
【具体实施方式】
下面结合附图和具体的实施方式进行说明。
参阅图1,图1是本发明透明电极制作方法一实施方式的流程图。透明电极制作方法包括:
步骤201:在玻璃基板上成膜并在薄膜上涂布光阻。
通过真空蒸镀、溅射、分子束蒸镀或化学蒸镀等方法在玻璃基板上形成薄膜,然后通过光阻涂布机在薄膜上涂布光阻。
步骤202:透过掩膜板对光阻进行曝光。
将涂布电阻后的玻璃基板输送至显影装置,显影光源透过掩膜板对光阻进行曝光。请一并参阅图3,掩膜板在对应液晶面板的显示区域部分300从外至内分成至少第一区域310及第二区域320两个区域,第一区域310中透明电极所对应的图形的间距定义为第一间距312,第二区域320中透明电极所对应的图形的间距定义为第二间距322,并且,第一间距312大于相应的预定间距,第一间距312与相应的预定间距之间的差大于第二间距322与相应的预定间距之间的差。
预定间距是指经过显影刻蚀后,希望得到的薄膜之间的间距。在理想状态下,经过显影刻蚀后薄膜之间的间距应与预定间距一致。
步骤203:对曝光后的玻璃基板进行显影、刻蚀。
曝光后,将玻璃基板放入显影液中进行显影,以把没有被曝光的光阻去掉,然后将显影后的玻璃基板取出,清洗,再送到刻蚀装置中,加入刻蚀液以将没有光阻的部分刻蚀掉。最后,将光阻剥离以形成基板。
区别于现有技术的情况,本发明采用在掩膜板设置接近非显示区域的第一区域以及远离非显示区域的第二区域,而第一区域中图形的间距大于第二区域中图形的间距,第一区域中显影液和刻蚀液的浓度比较少,则预先设置该区域的间距较大,第一区域中显影液和刻蚀液的浓度比较大,则预先设置该区域的间距较小,从而补偿由于浓度差异所导致的间距差异,从而使得成型后的整个显示区域的透明电极的间距误差减少,从而提高显示效果。
请参阅图4,图4是本发明透明电极制作方法另一实施方式中掩膜板的结构示意图。透明电极制作方法另一实施方式与上一实施方式基本相似,其不同之处在于,掩膜板在对应液晶面板的显示区域部分从外至内分成第一区域310、第二区域320以及第三区域330,第三区域330设置于第一区域310与第二区域320之间,并且,第三区域330中透明电极所对应的图形的间距为第一间距312或第二间距322,并且从外至内第一间距312所占的比例逐渐减少而第二间距322所占的比例逐渐增大。
具体地,第一区域310、第二区域320以及第三区域330以像素大小为基本单位划分为长宽比一样的矩形区域。将第一区域310中基本单位内的图形的间距均定义为第一间距312,而将第二区域320中基本单位内的图形的间距均定义为第二间距322。第三区域330中,最接近第一区域310处设置为第一间距312的基本单位的比例接近100%,而最接近第二区域320处设置为第二间距322的基本单位的比例接近100%。在两者之间,从外至内,设置为第一间距312的基本单位的数目的比例逐渐减少,而设置为第二间距322的基本单位的数目的比例相应逐渐增多。
将第三区域330的图形的间距设置为第一间距312或第二间距322,并且从外至内第一间距312所占的比例逐渐减少而第二间距322所占的比例逐渐增大,可以使得成型后的整个显示区域的透明电极的间距误差减少的同时避免出现过多的加工规格,减少掩膜板加工的难度,以及提高掩膜板加工的精度。
参见图5,图5是本发明透明电极制作方法再一实施方式中掩膜板的结构示意图。透明电极制作方法另一实施方式与上一实施方式基本相似,其不同之处在于,掩膜板的第三区域530从外至内图形之间的间距逐渐减小。特别地,可以设置从外至内,图形之间的间距分别为间距1、间距2、间距3、间距4……,而且,间距1>间距2>间距3>间距4>……。
本发明还提供了一种掩膜板,具体请见图3和图4及相关描述,此处不再赘述。
本发明还提供了一种透明电极制作设备,包括显影光源以及掩膜板,所述显影光源产生显影光线透过所述掩膜板,其中,掩膜板如图3和图4及相关描述,此处不再赘述。
以上所述仅为本发明的实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。

Claims (8)

  1. 一种透明电极制作方法,其中,包括如下步骤:
    通过真空蒸镀、溅射、分子束蒸镀或化学蒸镀方法在玻璃基板上成膜并在薄膜上涂布光阻;
    透过掩膜板对所述光阻进行曝光,其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成所述第一区域、所述第二区域以及第三区域,所述第一区域中透明电极所对应的图形的间距设置为第一间距,所述第二区域中透明电极所对应的图形的间距设置为第二间距,第一间距大于相应的预定间距,第一间距与相应的预定间距之间的差大于第二间距与相应的预定间距之间的差,所述第三区域设置于所述第一区域与所述第二区域之间,并且,所述第三区域中透明电极所对应的图形的间距为第一间距或第二间距,并且从外至内第一间距所占的比例逐渐减少而第二间距所占的比例逐渐增大;
    对曝光后的所述玻璃基板进行显影、刻蚀以在所述玻璃基板上形成透明电极。
  2. 一种透明电极制作方法,其中,包括如下步骤:
    在玻璃基板上成膜并在薄膜上涂布光阻;
    透过掩膜板对所述光阻进行曝光,其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成至少第一区域及第二区域两个区域,所述第一区域中透明电极所对应的图形的间距设置为第一间距,所述第二区域中透明电极所对应的图形的间距设置为第二间距,并且,第一间距大于相应的预定间距,第一间距与相应的预定间距之间的差大于第二间距与相应的预定间距之间的差;
    对曝光后的所述玻璃基板进行显影、刻蚀以在所述玻璃基板上形成透明电极。
  3. 根据权利要求2所述的方法,其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成所述第一区域、所述第二区域以及第三区域,所述第三区域设置于所述第一区域与所述第二区域之间,并且,所述第三区域中透明电极所对应的图形的间距为第一间距或第二间距,并且从外至内第一间距所占的比例逐渐减少而第二间距所占的比例逐渐增大。
  4. 根据权利要求3所述的方法,其中,所述第一区域、所述第二区域以及所述第三区域为长宽比一样的矩形区域。
  5. 根据权利要求2所述的方法,其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成所述第一区域、所述第二区域以及第三区域,所述第三区域设置于所述第一区域与所述第二区域之间,并且,从外至内所述第三区域中透明电极所对应的图形的间距逐渐减小。
  6. 一种掩膜板,其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成至少第一区域及第二区域两个区域,所述第一区域中透明电极所对应的图形的间距设置为第一间距,所述第二区域中透明电极所对应的图形的间距设置为第二间距,并且,第一间距大于相应的预定间距,第一间距与相应的预定间距之间的差大于第二间距与相应的预定间距之间的差。
  7. 根据权利要求6所述的掩膜板,其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成所述第一区域、所述第二区域以及第三区域,所述第三区域设置于所述第一区域与所述第二区域之间,并且,所述第三区域中透明电极所对应的图形的间距为第一间距或第二间距,并且从外至内第一间距所占的比例逐渐减少而第二间距所占的比例逐渐增大。
  8. 根据权利要求6所述的掩膜板,其中,所述掩膜板在对应液晶面板的显示区域部分从外至内分成所述第一区域、所述第二区域以及第三区域,所述第三区域设置于所述第一区域与所述第二区域之间,并且,从外至内所述第三区域中透明电极所对应的图形的间距逐渐减小。
PCT/CN2012/082625 2012-09-26 2012-10-09 透明电极制作方法以及掩膜板 WO2014047961A1 (zh)

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CN101211865A (zh) * 2006-12-27 2008-07-02 海力士半导体有限公司 制造半导体器件的方法
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CN1581437A (zh) * 2003-08-07 2005-02-16 株式会社东芝 光掩膜、制造图形的方法以及制造半导体器件的方法
CN101211865A (zh) * 2006-12-27 2008-07-02 海力士半导体有限公司 制造半导体器件的方法
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