WO2014044813A3 - Optoelektronisches bauelement umfassend ein transparentes auskoppelelement - Google Patents

Optoelektronisches bauelement umfassend ein transparentes auskoppelelement Download PDF

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Publication number
WO2014044813A3
WO2014044813A3 PCT/EP2013/069608 EP2013069608W WO2014044813A3 WO 2014044813 A3 WO2014044813 A3 WO 2014044813A3 EP 2013069608 W EP2013069608 W EP 2013069608W WO 2014044813 A3 WO2014044813 A3 WO 2014044813A3
Authority
WO
WIPO (PCT)
Prior art keywords
out element
optoelectronic component
transparent coupling
electromagnetic radiation
hybrid material
Prior art date
Application number
PCT/EP2013/069608
Other languages
English (en)
French (fr)
Other versions
WO2014044813A2 (de
Inventor
Georg DIRSCHERL
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to JP2015532428A priority Critical patent/JP6127145B2/ja
Priority to DE112013004622.9T priority patent/DE112013004622A5/de
Priority to CN201380049400.5A priority patent/CN104662681B/zh
Priority to US14/430,191 priority patent/US9515236B2/en
Publication of WO2014044813A2 publication Critical patent/WO2014044813A2/de
Publication of WO2014044813A3 publication Critical patent/WO2014044813A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Abstract

Es wird ein optoelektronisches Bauelement umfassend eine Schichtenfolge mit einer aktiven Schicht, die elektromagnetische Primärstrahlung emittiert und zumindest ein transparentes Auskoppelelement das im Strahlengang der elektromagnetischen Primärstrahlung angeordnet ist, angegeben. Das zumindest eine transparente Auskoppelelement umfasst ein Hybridmaterial oder ist aus einem Hybridmaterial hergestellt.
PCT/EP2013/069608 2012-09-21 2013-09-20 Optoelektronisches bauelement umfassend ein transparentes auskoppelelement WO2014044813A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015532428A JP6127145B2 (ja) 2012-09-21 2013-09-20 透明光取り出し素子を含むオプトエレクトロニクス部品
DE112013004622.9T DE112013004622A5 (de) 2012-09-21 2013-09-20 Optoelektronisches Bauelement umfassend ein transparentes Auskoppelelement
CN201380049400.5A CN104662681B (zh) 2012-09-21 2013-09-20 包括透明的耦合输出元件的光电子器件
US14/430,191 US9515236B2 (en) 2012-09-21 2013-09-20 Optoelectronic component comprising a transparent coupling-out element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012108939.6A DE102012108939A1 (de) 2012-09-21 2012-09-21 Optoelektronisches Bauelement umfassend ein transparentes Auskoppelelement
DE102012108939.6 2012-09-21

Publications (2)

Publication Number Publication Date
WO2014044813A2 WO2014044813A2 (de) 2014-03-27
WO2014044813A3 true WO2014044813A3 (de) 2014-05-15

Family

ID=49230753

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/069608 WO2014044813A2 (de) 2012-09-21 2013-09-20 Optoelektronisches bauelement umfassend ein transparentes auskoppelelement

Country Status (5)

Country Link
US (1) US9515236B2 (de)
JP (1) JP6127145B2 (de)
CN (1) CN104662681B (de)
DE (2) DE102012108939A1 (de)
WO (1) WO2014044813A2 (de)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1873211A1 (de) * 2006-06-14 2008-01-02 Shin-Etsu Chemical Co., Ltd. Phosphorgefüllte, härtbare Silikonharz-Zusammensetzung und gehärtetes Produkt daraus
WO2012067766A2 (en) * 2010-11-18 2012-05-24 3M Innovative Properties Company Light emitting diode component comprising polysilazane bonding layer

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911630B2 (ja) 1981-06-09 1984-03-16 横浜ゴム株式会社 エポキシ系接着剤組成物
DE3837418A1 (de) * 1988-11-04 1990-05-10 Degussa Organosiloxanamin-copolykondensate, verfahren zu ihrer herstellung und verwendung (i)
DE3837415A1 (de) * 1988-11-04 1990-05-10 Degussa Organopolysiloxan-harnstoff- und organopolysiloxan-thioharnstoff-derivate, verfahren zu ihrer herstellung und verwendung
DE3925358A1 (de) * 1989-07-31 1991-02-07 Degussa Aminoalkylsubstituierte organopolysiloxan-thioharnstoff-derivate, verfahren zu ihrer herstellung und verwendung
DE3925359C1 (de) 1989-07-31 1991-02-07 Degussa Ag, 6000 Frankfurt, De
DE59713024D1 (de) * 1996-06-26 2010-01-28 Osram Opto Semiconductors Gmbh Lichtabstrahlender Halbleiterchip und Lichtabstrahlendes Halbleiterbauelement und Verfahren zu dessen Herstellung
JPH10316871A (ja) 1997-05-20 1998-12-02 Hitachi Ltd 組成物および該組成物を使用した光学および電子デバイス
US6297332B1 (en) 1998-04-28 2001-10-02 Mitsui Chemicals, Inc. Epoxy-resin composition and use thereof
JP2000063637A (ja) 1998-08-20 2000-02-29 Toshiba Chem Corp エポキシ樹脂組成物
JP2001348555A (ja) * 2000-06-07 2001-12-18 Nitto Denko Corp 接着剤組成物
DE102005009790A1 (de) * 2005-03-03 2006-09-07 Consortium für elektrochemische Industrie GmbH Verfahren zur Herstellung von Alkoxysilylmethylisocyanuraten
US9061450B2 (en) * 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
WO2009148099A1 (ja) * 2008-06-04 2009-12-10 日産化学工業株式会社 ケイ素系液晶配向剤、液晶配向膜及び液晶表示素子
DE102010024758A1 (de) * 2009-09-30 2011-03-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Optikkörpers, Optikkörper und optoelektronisches Bauteil mit dem Optikkörper
US9093623B2 (en) * 2009-12-30 2015-07-28 Merck Patent Gmbh Casting composition as diffusion barrier for water molecules
TWI435914B (zh) * 2010-12-31 2014-05-01 Eternal Chemical Co Ltd 可固化之有機聚矽氧烷組合物及其製法
JP2012156334A (ja) 2011-01-26 2012-08-16 Sony Corp 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP4951147B1 (ja) 2011-09-08 2012-06-13 積水化学工業株式会社 光半導体装置用硬化性組成物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1873211A1 (de) * 2006-06-14 2008-01-02 Shin-Etsu Chemical Co., Ltd. Phosphorgefüllte, härtbare Silikonharz-Zusammensetzung und gehärtetes Produkt daraus
WO2012067766A2 (en) * 2010-11-18 2012-05-24 3M Innovative Properties Company Light emitting diode component comprising polysilazane bonding layer

Also Published As

Publication number Publication date
JP2015530751A (ja) 2015-10-15
WO2014044813A2 (de) 2014-03-27
US9515236B2 (en) 2016-12-06
JP6127145B2 (ja) 2017-05-10
CN104662681A (zh) 2015-05-27
DE102012108939A1 (de) 2014-03-27
CN104662681B (zh) 2017-07-21
US20150214447A1 (en) 2015-07-30
DE112013004622A5 (de) 2015-06-03

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