WO2014041991A1 - 研磨用組成物 - Google Patents
研磨用組成物 Download PDFInfo
- Publication number
- WO2014041991A1 WO2014041991A1 PCT/JP2013/072601 JP2013072601W WO2014041991A1 WO 2014041991 A1 WO2014041991 A1 WO 2014041991A1 JP 2013072601 W JP2013072601 W JP 2013072601W WO 2014041991 A1 WO2014041991 A1 WO 2014041991A1
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- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- acid
- polishing composition
- indole
- barrier layer
- Prior art date
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- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- 229910052735 hafnium Inorganic materials 0.000 description 1
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- 125000003406 indolizinyl group Chemical class C=1(C=CN2C=CC=CC12)* 0.000 description 1
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- DWPCPZJAHOETAG-UHFFFAOYSA-N meso-lanthionine Natural products OC(=O)C(N)CSCC(N)C(O)=O DWPCPZJAHOETAG-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- 229930182817 methionine Natural products 0.000 description 1
- 229960004452 methionine Drugs 0.000 description 1
- 229940078490 n,n-dimethylglycine Drugs 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- SBOJXQVPLKSXOG-UHFFFAOYSA-N o-amino-hydroxylamine Chemical compound NON SBOJXQVPLKSXOG-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229960003104 ornithine Drugs 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 229960005190 phenylalanine Drugs 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 108010064470 polyaspartate Proteins 0.000 description 1
- 229920002643 polyglutamic acid Polymers 0.000 description 1
- 229920000656 polylysine Polymers 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- AVTYONGGKAJVTE-UHFFFAOYSA-L potassium tartrate Chemical compound [K+].[K+].[O-]C(=O)C(O)C(O)C([O-])=O AVTYONGGKAJVTE-UHFFFAOYSA-L 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 description 1
- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 150000004892 pyridazines Chemical class 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229960001153 serine Drugs 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229960003080 taurine Drugs 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 229960002898 threonine Drugs 0.000 description 1
- 229940034208 thyroxine Drugs 0.000 description 1
- XUIIKFGFIJCVMT-UHFFFAOYSA-N thyroxine-binding globulin Natural products IC1=CC(CC([NH3+])C([O-])=O)=CC(I)=C1OC1=CC(I)=C(O)C(I)=C1 XUIIKFGFIJCVMT-UHFFFAOYSA-N 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- 229940038773 trisodium citrate Drugs 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229940124024 weight reducing agent Drugs 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the present invention relates to a polishing composition.
- CMP Chemical mechanical polishing
- a general method of CMP is to apply a polishing pad on a circular polishing platen (platen), immerse the polishing pad surface with an abrasive, press the surface on which the metal film of the substrate is formed, The polishing surface plate is rotated in a state where pressure (hereinafter also simply referred to as polishing pressure) is applied, and the metal film on the convex portion is removed by mechanical friction between the abrasive and the convex portion of the metal film.
- polishing pressure hereinafter also simply referred to as polishing pressure
- tantalum, a tantalum alloy, a tantalum compound, or the like is formed as a barrier layer to prevent copper diffusion into the interlayer insulating film in a lower layer of copper or copper alloy of the wiring. Therefore, it is necessary to remove the exposed barrier layer by CMP except for the wiring portion in which copper or a copper alloy is embedded.
- each wiring layer In order to form each wiring layer, first, CMP of a metal film (hereinafter also referred to as “metal film CMP”) that removes excess wiring material deposited by plating or the like is performed in one or more stages. Next, CMP is generally performed to remove the barrier layer exposed on the surface (hereinafter also referred to as “barrier layer CMP”).
- barrier layer CMP the barrier layer exposed on the surface
- the metal film CMP causes so-called dishing in which the wiring portion is excessively polished and further causes erosion.
- the polishing speed of the metal wiring portion and the polishing speed of the barrier metal portion are adjusted, and finally the wiring having few steps such as dishing and erosion.
- the polishing rate of the barrier layer and the interlayer insulating film is relatively small compared to the metal wiring part, dishing that causes the wiring part to be polished quickly and erosion as a result thereof occur. For this reason, it is desirable that the polishing rate of the barrier layer and the insulating film is appropriately high.
- the dishing is often caused by the metal film CMP in practice, and the polishing rate of the barrier layer and the insulating film is relatively set for the reasons described above. This is because it is also desirable in that it is required to be high.
- a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit which includes an antistatic agent and a specific cationic compound, is used. It is disclosed. Also, JP 2010-028078 A, JP 2010-028079 A (International Publication No. 2009/104465), JP 2010-028080 A, and JP 2010-028081 A (US Patent Application Publication 2011). / 081780 specification) discloses a polishing liquid containing silica particles, an organic acid, and a water-soluble polymer having a weight average molecular weight of 50,000 to 1,000,000.
- the present invention provides a polishing composition that can sufficiently maintain a high polishing rate for a barrier layer and an insulating film, can sufficiently suppress a polishing rate of a low dielectric constant material, and can prevent agglomeration of abrasive grains. For the purpose.
- the present invention relates to a polishing composition used for polishing a polishing object having a barrier layer, a metal wiring layer, and an insulating film, wherein the oxidizing agent and the weight average molecular weight are 1000 or less.
- a polishing composition comprising an ionic compound.
- the present invention relates to a polishing composition used for polishing a polishing object having a barrier layer, a metal wiring layer, and an insulating film, and an oxidant and a nonionic property having a weight average molecular weight of 1000 or less
- a polishing composition comprising a compound.
- the nonionic compound used in the present invention has a low molecular weight, and therefore the high molecular weight nonionic compound is used. It is considered that the polishing rate of the low dielectric constant material can be suppressed without forming a protective film having such a large thickness and without reducing the polishing rate of the barrier layer and the insulating film.
- the low molecular weight nonionic compound according to the present invention has an action on the surface of the abrasive grains, the action of aggregating a plurality of abrasive grains is weak, and it is considered that the aggregation of the abrasive grains can be prevented.
- the said mechanism is based on estimation and this invention is not limited to the said mechanism at all.
- the polishing object according to the present invention includes a barrier layer, a metal wiring layer, and an insulating film, and a low dielectric constant material as necessary.
- the material included in the barrier layer is not particularly limited, and examples thereof include tantalum, titanium, tungsten, cobalt; noble metals such as gold, silver, platinum, palladium, rhodium, ruthenium, iridium, and osmium. These metals may be contained in the barrier layer in the form of an alloy or a metal compound. Tantalum or a noble metal is preferable. These metals may be used alone or in combination of two or more.
- the metal contained in the metal wiring layer is not particularly limited, and examples thereof include copper, aluminum, hafnium, cobalt, nickel, titanium, and tungsten. These metals may be contained in the metal wiring layer in the form of an alloy or a metal compound. Copper or copper alloy is preferable. These metals may be used alone or in combination of two or more.
- Examples of the material contained in the insulating film include TEOS (tetraethoxysilane).
- the low dielectric constant material include those generally abbreviated as Low-k having a relative dielectric constant of about 3.5 to 2.0, such as silicon carbide oxide (SiOC) (for example, applied). Black diamond (registered trademark) manufactured by Material Co., Ltd.), fluorine-containing silicon oxide (SiOF), organic polymer, and the like.
- oxidizing agent examples include hydrogen peroxide, peracetic acid, percarbonate, urea peroxide, perchloric acid; persulfates such as sodium persulfate, potassium persulfate, and ammonium persulfate. . These oxidizing agents may be used alone or in combination of two or more.
- persulfate and hydrogen peroxide are preferable, and hydrogen peroxide is particularly preferable.
- the lower limit of the content (concentration) of the oxidizing agent in the polishing composition is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, and 0.1% by weight or more. More preferably it is. There is an advantage that the polishing rate by the polishing composition is improved as the content of the oxidizing agent is increased.
- the upper limit of the content (concentration) of the oxidizing agent in the polishing composition is preferably 10% by weight or less, more preferably 5% by weight or less, and further preferably 3% by weight or less. preferable.
- the content of the oxidizing agent decreases, the material cost of the polishing composition can be reduced, and the processing of the polishing composition after polishing, that is, the advantage of reducing the load of waste liquid treatment can be achieved. Have.
- the nonionic compound according to the present invention has a weight average molecular weight of 1000 or less. When the weight average molecular weight exceeds 1000, agglomeration of abrasive grains occurs, and it becomes difficult to suppress the polishing rate of the low dielectric constant material.
- the weight average molecular weight is preferably 950 or less, more preferably 900 or less.
- the lower limit of the weight average molecular weight is not particularly limited. However, from the viewpoint of the effect of suppressing the polishing rate for the low dielectric constant material, it is preferably 200 or more, and more preferably 300 or more.
- the weight average molecular weight can be measured by gel permeation chromatography (GPC) using polystyrene as a standard substance.
- nonionic compounds include, for example, polyoxypropylene polyoxyethylene glycol, polyoxypropylene polyoxyethylene alkyl ether, polyoxyethylene alkyl ether, polyoxyethylene alkyl allyl ether, polyoxyethylene polyoxypropylene ether derivatives
- Ether type surfactants such as polyoxypropylene glyceryl ether, polyethylene glycol, polypropylene glycol, methoxypolyethylene glycol, oxyethylene adducts of acetylenic diols
- ester type surfactants such as sorbitan fatty acid esters and glycerol borate fatty acid esters
- Amino ether type surfactant such as polyoxyethylene alkylamine
- polyoxyethylene sorbitan fatty acid ester Ether ester type surfactants such as reoxyethylene glycerol borate fatty acid ester and polyoxyethylene alkyl ester
- alkanolamide type surfactants such as fatty acid alkanolamide and poly
- a compound having an alkyl ether chain is preferable from the viewpoint of a polishing rate suppressing effect on a low dielectric constant material, and the alkyl ether chain is represented by the following chemical formula (1) or (2). It is preferable that it is a structure represented.
- n is an integer of 1 to 23
- m is an integer of 1 to 15.
- polyoxypropylene polyoxyethylene glycol More specifically, polyoxypropylene polyoxyethylene glycol, polyoxyethylene alkyl ether, polyethylene glycol, and polypropylene glycol are preferable.
- the lower limit of the content of the nonionic compound in the polishing composition is preferably 0.01 g / L or more, more preferably 0.05 g / L or more, and 0.1 g / L or more. More preferably. As the content of the nonionic compound increases, there is an advantage that the effect of suppressing the polishing rate for the low dielectric constant material is increased.
- the upper limit of the content of the nonionic compound in the polishing composition is preferably 15 g / L or less, more preferably 10 g / L or less, and even more preferably 5 g / L or less. .
- the content of the nonionic compound decreases, there is an advantage that aggregation of abrasive grains is easily suppressed.
- the polishing composition of the present invention preferably contains water as a dispersion medium or solvent for dispersing or dissolving each component. From the viewpoint of suppressing the inhibition of the action of other components, water containing as little impurities as possible is preferable. Specifically, after removing impurity ions with an ion exchange resin, pure water from which foreign matters are removed through a filter is used. Water, ultrapure water, or distilled water is preferred.
- the polishing composition of the present invention comprises abrasive grains, complexing agents, metal anticorrosives, antiseptics, antifungal agents, oxidizing agents, reducing agents, water-soluble polymers, surfactants, and poorly soluble materials as necessary.
- Other components such as an organic solvent for dissolving the organic substance may be further included.
- the abrasive grains, the complexing agent, and the metal anticorrosive which are other preferable components will be described.
- the abrasive grains contained in the polishing composition have an action of mechanically polishing the object to be polished, and improve the polishing rate of the object to be polished by the polishing composition.
- the abrasive used may be any of inorganic particles, organic particles, and organic-inorganic composite particles.
- the inorganic particles include particles made of metal oxides such as silica, alumina, ceria, titania, silicon nitride particles, silicon carbide particles, and boron nitride particles.
- Specific examples of the organic particles include polymethyl methacrylate (PMMA) particles.
- PMMA polymethyl methacrylate
- silica is preferable, and colloidal silica is particularly preferable.
- Abrasive grains may be surface-modified. Since ordinary colloidal silica has a zeta potential value close to zero under acidic conditions, silica particles are not electrically repelled with each other under acidic conditions and are likely to agglomerate. On the other hand, abrasive grains whose surfaces are modified so that the zeta potential has a relatively large negative value even under acidic conditions are strongly repelled from each other and dispersed well even under acidic conditions, resulting in storage of the polishing composition. Stability will be improved. Such surface-modified abrasive grains can be obtained, for example, by mixing a metal such as aluminum, titanium or zirconium or an oxide thereof with the abrasive grains and doping the surface of the abrasive grains.
- a metal such as aluminum, titanium or zirconium or an oxide thereof
- colloidal silica having an organic acid immobilized thereon is particularly preferred.
- the organic acid is immobilized on the surface of the colloidal silica contained in the polishing composition, for example, by chemically bonding a functional group of the organic acid to the surface of the colloidal silica. If the colloidal silica and the organic acid are simply allowed to coexist, the organic acid is not fixed to the colloidal silica. If sulfonic acid, which is a kind of organic acid, is immobilized on colloidal silica, for example, the method described in “Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups”, Chem. Commun. 246-247 (2003). It can be carried out.
- a silane coupling agent having a thiol group such as 3-mercaptopropyltrimethoxysilane is coupled to colloidal silica and then oxidized with hydrogen peroxide to fix the sulfonic acid on the surface.
- the colloidal silica thus obtained can be obtained.
- the carboxylic acid is immobilized on colloidal silica, for example, “Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel", Chemistry Letters, 3,- 229 (2000).
- colloidal silica having a carboxylic acid immobilized on the surface can be obtained by irradiating light after coupling a silane coupling agent containing a photoreactive 2-nitrobenzyl ester to colloidal silica. .
- the lower limit of the average primary particle diameter of the abrasive grains is preferably 5 nm or more, more preferably 7 nm or more, and further preferably 10 nm or more.
- the upper limit of the average primary particle diameter of the abrasive grains is preferably 500 nm or less, more preferably 100 nm or less, and further preferably 70 nm or less.
- the polishing rate of the object to be polished by the polishing composition is improved, and the occurrence of dishing on the surface of the object to be polished after polishing with the polishing composition is further suppressed. Can do.
- the average primary particle diameter of an abrasive grain is calculated based on the specific surface area of the abrasive grain measured by BET method, for example.
- the lower limit of the content of abrasive grains in the polishing composition is preferably 0.005% by weight or more, more preferably 0.5% by weight or more, and even more preferably 1% by weight or more. Most preferably, it is 3% by weight or more.
- the upper limit of the content of the abrasive grains in the polishing composition is preferably 50% by weight or less, more preferably 30% by weight, and further preferably 15% by weight or less. Within such a range, the polishing rate of the polishing object can be improved, and the cost of the polishing composition can be reduced, and dishing is performed on the surface of the polishing object after polishing using the polishing composition. Can be further suppressed.
- the complexing agent contained in the polishing composition has an action of chemically etching the surface of the polishing object, and improves the polishing rate of the polishing object by the polishing composition.
- complexing agents examples include inorganic acids or salts thereof, organic acids or salts thereof, nitrile compounds, amino acids, and chelating agents. These complexing agents may be used alone or in admixture of two or more.
- the complexing agent may be a commercially available product or a synthetic product.
- inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, carbonic acid, boric acid, tetrafluoroboric acid, hypophosphorous acid, phosphorous acid, phosphoric acid, pyrophosphoric acid, and the like.
- organic acid examples include, for example, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, monovalent carboxylic acids such as n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, lactic acid, glycolic acid, glyceric acid, benzoic acid, salicylic acid; oxalic acid, malonic acid, succinic acid, Examples thereof include carboxylic acids such as glutaric acid, gluconic acid, adipic acid, pimelic acid, maleic acid, phthalic acid, fumaric acid, malic acid, tartaric acid and citric acid. Also, sulfonic acids such as methanesulfonic acid, ethanes,
- a salt of the inorganic acid or the organic acid may be used.
- a salt of a weak acid and a strong base a salt of a strong acid and a weak base, or a salt of a weak acid and a weak base
- a pH buffering action can be expected.
- salts include, for example, potassium chloride, sodium sulfate, potassium nitrate, potassium carbonate, potassium tetrafluoroborate, potassium pyrophosphate, potassium oxalate, trisodium citrate, (+)-potassium tartrate, hexafluoro A potassium phosphate etc. are mentioned.
- nitrile compounds include acetonitrile, aminoacetonitrile, propionitrile, butyronitrile, isobutyronitrile, benzonitrile, glutaronitrile, methoxyacetonitrile, and the like.
- amino acids include glycine, ⁇ -alanine, ⁇ -alanine, N-methylglycine, N, N-dimethylglycine, 2-aminobutyric acid, norvaline, valine, leucine, norleucine, isoleucine, phenylalanine, proline, sarcosine, Ornithine, lysine, taurine, serine, threonine, homoserine, tyrosine, bicine, tricine, 3,5-diiodo-tyrosine, ⁇ - (3,4-dihydroxyphenyl) -alanine, thyroxine, 4-hydroxy-proline, cysteine, methionine , Ethionine, lanthionine, cystathionine, cystine, cysteic acid, aspartic acid, glutamic acid, S- (carboxymethyl) -cysteine, 4-aminobutyric acid, asparagine, glutamine,
- chelating agents include nitrilotriacetic acid, diethylenetriaminepentaacetic acid, ethylenediaminetetraacetic acid, N, N, N-trimethylenephosphonic acid, ethylenediamine-N, N, N ′, N′-tetramethylenesulfonic acid, transcyclohexane Diamine tetraacetic acid, 1,2-diaminopropanetetraacetic acid, glycol ether diamine tetraacetic acid, ethylenediamine orthohydroxyphenylacetic acid, ethylenediamine disuccinic acid (SS form), N- (2-carboxylateethyl) -L-aspartic acid, ⁇ -Alanine diacetate, 2-phosphonobutane-1,2,4-tricarboxylic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, N, N'-bis (2-hydroxybenzyl) ethylenediamine-N, N'-diace
- At least one selected from the group consisting of an inorganic acid or a salt thereof, a carboxylic acid or a salt thereof, and a nitrile compound is preferable.
- an inorganic acid or a salt thereof Is more preferable.
- the lower limit of the content (concentration) of the complexing agent in the polishing composition is not particularly limited because the effect is exhibited even in a small amount, but is preferably 0.001 g / L or more, 0.01 g / L or more is more preferable, and 1 g / L or more is more preferable.
- the upper limit of the content (concentration) of the complexing agent in the polishing composition of the present invention is preferably 20 g / L or less, more preferably 15 g / L or less, and 10 g / L or less. More preferably it is. If it is this range, the effect of this invention can be acquired more efficiently.
- Metal anticorrosive By adding a metal anticorrosive to the polishing composition, it is possible to further suppress the formation of a dent on the side of the wiring in the polishing using the polishing composition. Moreover, it can suppress more that dishing arises on the surface of the grinding
- the metal anticorrosive that can be used is not particularly limited, but is preferably a heterocyclic compound or a surfactant.
- the number of heterocyclic rings in the heterocyclic compound is not particularly limited.
- the heterocyclic compound may be a monocyclic compound or a polycyclic compound having a condensed ring.
- These metal anticorrosives may be used alone or in combination of two or more.
- a commercially available product or a synthetic product may be used as the metal anticorrosive.
- isoindole compound indazole compound, purine compound, quinolidine compound, quinoline compound, isoquinoline compound, naphthyridine compound, phthalazine compound, quinoxaline compound, quinazoline compound, cinnoline compound, buteridine compound, thiazole compound, isothiazole compound, oxazole compound, iso Examples thereof include nitrogen-containing heterocyclic compounds such as oxazole compounds and furazane compounds.
- More specific examples include pyrazole compounds such as 1H-pyrazole, 4-nitro-3-pyrazolecarboxylic acid, 3,5-pyrazolecarboxylic acid, 3-amino-5-phenylpyrazole, 5 -Amino-3-phenylpyrazole, 3,4,5-tribromopyrazole, 3-aminopyrazole, 3,5-dimethylpyrazole, 3,5-dimethyl-1-hydroxymethylpyrazole, 3-methylpyrazole, 1-methyl Pyrazole, 3-amino-5-methylpyrazole, 4-amino-pyrazolo [3,4-d] pyrimidine, allopurinol, 4-chloro-1H-pyrazolo [3,4-D] pyrimidine, 3,4-dihydroxy-6 -Methylpyrazolo (3,4-B) -pyridine, 6-methyl-1H-pyrazolo [3,4-b] pyridine 3-amine, and the like.
- pyrazole compounds such as 1H-pyrazole, 4-
- imidazole compounds include imidazole, 1-methylimidazole, 2-methylimidazole, 4-methylimidazole, 1,2-dimethylpyrazole, 2-ethyl-4-methylimidazole, 2-isopropylimidazole, benzimidazole, 5,6-dimethylbenzimidazole, 2-aminobenzimidazole, 2-chlorobenzimidazole, 2-methylbenzimidazole, 2- (1-hydroxyethyl) benzimidazole, 2-hydroxybenzimidazole, 2-phenylbenzimidazole, 2 , 5-dimethylbenzimidazole, 5-methylbenzimidazole, 5-nitrobenzimidazole, 1H-purine and the like.
- triazole compounds include, for example, 1,2,3-triazole (1H-BTA), 1,2,4-triazole, 1-methyl-1,2,4-triazole, methyl-1H-1,2, 4-triazole-3-carboxylate, 1,2,4-triazole-3-carboxylic acid, methyl 1,2,4-triazole-3-carboxylate, 1H-1,2,4-triazole-3-thiol, 3,5-diamino-1H-1,2,4-triazole, 3-amino-1,2,4-triazole-5-thiol, 3-amino-1H-1,2,4-triazole, 3-amino- 5-benzyl-4H-1,2,4-triazole, 3-amino-5-methyl-4H-1,2,4-triazole, 3-nitro-1,2,4-triazole, 3-bromo-5 Nitro 1,2,4-triazole, 4- (1,2,4-triazol-1-yl) phenol, 4-amino-1,2,4-triazole, 4-amino
- tetrazole compounds include 1H-tetrazole, 5-methyltetrazole, 5-aminotetrazole, 5-phenyltetrazole, and the like.
- indazole compounds include, for example, 1H-indazole, 5-amino-1H-indazole, 5-nitro-1H-indazole, 5-hydroxy-1H-indazole, 6-amino-1H-indazole, 6-nitro-1H -Indazole, 6-hydroxy-1H-indazole, 3-carboxy-5-methyl-1H-indazole and the like.
- indole compounds include, for example, 1H-indole, 1-methyl-1H-indole, 2-methyl-1H-indole, 3-methyl-1H-indole, 4-methyl-1H-indole, 5-methyl-1H- Indole, 6-methyl-1H-indole, 7-methyl-1H-indole, 4-amino-1H-indole, 5-amino-1H-indole, 6-amino-1H-indole, 7-amino-1H-indole, 4-hydroxy-1H-indole, 5-hydroxy-1H-indole, 6-hydroxy-1H-indole, 7-hydroxy-1H-indole, 4-methoxy-1H-indole, 5-methoxy-1H-indole, 6- Methoxy-1H-indole, 7-methoxy-1H-indole, 4-chloro-1H Indole, 5-chloro-1H-indole, 6-chloro-1H Indo
- heterocyclic compounds are triazole compounds, and in particular, 1H-benzotriazole, 5-methyl-1H-benzotriazole, 5,6-dimethyl-1H-benzotriazole, 1- [N, N-bis (hydroxy Ethyl) aminomethyl] -5-methylbenzotriazole, 1- [N, N-bis (hydroxyethyl) aminomethyl] -4-methylbenzotriazole, 1,2,3-triazole, and 1,2,4-triazole Is preferred. Since these heterocyclic compounds have high chemical or physical adsorptive power to the surface of the object to be polished, a stronger protective film can be formed on the surface of the object to be polished. This is advantageous in improving the flatness of the surface of the object to be polished after polishing using the polishing composition of the present invention.
- examples of the surfactant used as a metal anticorrosive include an anionic surfactant, a cationic surfactant, and an amphoteric surfactant.
- anionic surfactants include, for example, polyoxyethylene alkyl ether acetic acid, polyoxyethylene alkyl sulfuric acid ester, alkyl sulfuric acid ester, polyoxyethylene alkyl ether sulfuric acid, alkyl ether sulfuric acid, alkylbenzene sulfonic acid, alkyl phosphoric acid ester , Polyoxyethylene alkyl phosphate ester, polyoxyethylene sulfosuccinic acid, alkyl sulfosuccinic acid, alkyl naphthalene sulfonic acid, alkyl diphenyl ether disulfonic acid, and salts thereof.
- Examples of the cationic surfactant include alkyl trimethyl ammonium salt, alkyl dimethyl ammonium salt, alkyl benzyl dimethyl ammonium salt, alkyl amine salt and the like.
- amphoteric surfactants include alkyl betaines and alkyl amine oxides.
- preferable surfactants are polyoxyethylene alkyl ether acetic acid, polyoxyethylene alkyl ether sulfate, alkyl ether sulfate, and alkylbenzene sulfonate. Since these surfactants have a high chemical or physical adsorption force to the surface of the object to be polished, a stronger protective film can be formed on the surface of the object to be polished. This is advantageous in improving the flatness of the surface of the object to be polished after polishing using the polishing composition of the present invention.
- the lower limit of the content of the metal anticorrosive in the polishing composition is preferably 0.001 g / L or more, more preferably 0.005 g / L or more, and 0.01 g / L or more. Is more preferable.
- the upper limit of the content of the metal anticorrosive in the polishing composition is preferably 10 g / L or less, more preferably 5 g / L or less, and further preferably 2 g / L or less. If it is such a range, the flatness of the surface of the grinding
- the lower limit of the pH of the polishing composition of the present invention is preferably 3 or more. As the pH of the polishing composition increases, the risk of excessive etching of the surface of the object to be polished by the polishing composition can be reduced.
- the upper limit of the pH of the polishing composition is preferably 10 or less. As the pH of the polishing composition decreases, it is possible to further suppress the formation of a dent on the side of the wiring formed by polishing using the polishing composition.
- a pH adjuster may be used to adjust the pH of the polishing composition to a desired value.
- the pH adjuster to be used may be either acid or alkali, and may be any of inorganic and organic compounds.
- a pH adjuster can be used individually or in mixture of 2 or more types.
- the manufacturing method in particular of the polishing composition of this invention is not restrict
- the temperature at the time of mixing each component is not particularly limited, but is preferably 10 to 40 ° C., and may be heated to increase the dissolution rate. Further, the mixing time is not particularly limited.
- the polishing composition of the present invention is suitably used for polishing a polishing object having a barrier layer, a metal wiring layer, and an insulating film. Therefore, this invention provides the grinding
- a polishing apparatus As a polishing apparatus, a general holder having a polishing surface plate on which a holder for holding a substrate having a polishing object and a motor capable of changing the number of rotations are attached and a polishing pad (polishing cloth) can be attached.
- a polishing apparatus can be used.
- polishing pad a general nonwoven fabric, polyurethane, porous fluororesin, or the like can be used without particular limitation. It is preferable that the polishing pad is grooved so that the polishing liquid accumulates.
- the polishing conditions are not particularly limited.
- the rotation speed of the polishing platen is preferably 10 to 500 rpm, and the pressure applied to the substrate having the object to be polished (polishing pressure) is preferably 0.5 to 10 psi.
- the method of supplying the polishing composition to the polishing pad is not particularly limited, and for example, a method of continuously supplying with a pump or the like is employed. Although the supply amount is not limited, it is preferable that the surface of the polishing pad is always covered with the polishing composition of the present invention.
- the substrate After completion of polishing, the substrate is washed in running water, and water droplets adhering to the substrate are removed by a spin dryer or the like and dried to obtain a substrate having a barrier layer, a metal wiring layer, and an insulating film.
- the polishing composition of the present invention may be a one-component type or a multi-component type including a two-component type.
- the polishing composition of the present invention may be prepared by diluting the stock solution of the polishing composition, for example, 10 times or more using a diluent such as water.
- Examples 1 to 7, Comparative Examples 1 to 7 Colloidal silica as abrasive grains (average secondary particle diameter of about 70 nm (average primary particle diameter 35 nm, association degree 2) 10% by weight, hydrogen peroxide 0.6% by weight as oxidizing agent, isethionic acid 4.2 g as complexing agent / L, 1.2 g / L of 1H-BTA as a metal anticorrosive, and 1.5 g / L of nonionic compounds shown in Table 2 below are stirred and mixed in water so as to have the above concentrations (mixing temperature: A polishing composition was prepared at about 25 ° C., mixing time: about 10 minutes, and the pH of the composition was adjusted by adding potassium hydroxide (KOH) and confirmed with a pH meter. The weight average molecular weight was measured by GPC (gel permeation chromatography) using polystyrene as a standard substance.
- GPC gel permeation chromatography
- a 12-inch wafer in which a Ta film, a Ru film, a TEOS film, and a black diamond (registered trademark, BDII x ) film were formed on a silicon substrate was used.
- the polishing rate was measured when the surface of the polishing object was polished for 60 seconds under the polishing conditions shown in Table 1 below.
- the polishing rate was determined by dividing the difference in film thickness before and after polishing measured by using a sheet resistance measuring instrument based on the direct current four-probe method by the polishing time.
- the polishing composition was stored in a constant temperature and humidity chamber at 43 ° C. for 2 months (corresponding to storage at room temperature (25 ° C.) for 6 months) and then visually.
- the dispersion stability of the abrasive grains was observed.
- the evaluation results are shown in Table 2 below. In Table 2, o indicates that no agglomeration of abrasive grains occurred, and x indicates that agglomeration of abrasive grains occurred.
- the polishing compositions of the present invention (Examples 1 to 7) were used as a barrier layer as compared with the polishing compositions containing no nonionic compounds of Comparative Examples 1 and 5. It has been found that the polishing rate of tantalum and ruthenium and TEOS used as an insulating film is not greatly reduced, and the polishing rate of a black diamond (registered trademark) film as a low dielectric constant material is reduced.
- polishing compositions of the present invention did not cause agglomeration of abrasive grains, but had comparatively no nonionic compounds having a weight average molecular weight outside the scope of the present invention.
- agglomeration of abrasive grains occurred.
- Comparative Examples 3 and 7 using hydroxyethyl cellulose having a number average molecular weight of 25000 the agglomeration of the abrasive grains was severe and polishing itself could not be performed.
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Abstract
Description
本発明に係る研磨対象物は、バリア層、金属配線層、および絶縁膜を有し、必要に応じ低誘電率材料を有する。
本発明に係る酸化剤の具体例としては、過酸化水素、過酢酸、過炭酸塩、過酸化尿素、過塩素酸;過硫酸ナトリウム、過硫酸カリウム、過硫酸アンモニウムなどの過硫酸塩などが挙げられる。これら酸化剤は、単独でもまたは2種以上混合して用いてもよい。
本発明に係る非イオン性化合物は、重量平均分子量が1000以下である。重量平均分子量が1000を超える場合、砥粒の凝集が発生し、また、低誘電率材料の研磨速度の抑制が困難となる。該重量平均分子量は好ましくは950以下、より好ましくは900以下である。
本発明の研磨用組成物は、各成分を分散または溶解するための分散媒または溶媒として水を含むことが好ましい。他の成分の作用を阻害することを抑制するという観点から、不純物をできる限り含有しない水が好ましく、具体的には、イオン交換樹脂にて不純物イオンを除去した後、フィルタを通して異物を除去した純水や超純水、または蒸留水が好ましい。
本発明の研磨用組成物は、必要に応じて、砥粒、錯化剤、金属防食剤、防腐剤、防カビ剤、酸化剤、還元剤、水溶性高分子、界面活性剤、難溶性の有機物を溶解するための有機溶媒等の他の成分をさらに含んでもよい。以下、好ましい他の成分である、砥粒、錯化剤、および金属防食剤について説明する。
研磨用組成物中に含まれる砥粒は、研磨対象物を機械的に研磨する作用を有し、研磨用組成物による研磨対象物の研磨速度を向上させる。
研磨用組成物に含まれる錯化剤は、研磨対象物の表面を化学的にエッチングする作用を有し、研磨用組成物による研磨対象物の研磨速度を向上させる。
研磨用組成物中に金属防食剤を加えることにより、研磨用組成物を用いた研磨で配線の脇に凹みが生じるのをより抑えることができる。また、研磨用組成物を用いて研磨した後の研磨対象物の表面にディッシングが生じるのをより抑えることができる。
本発明の研磨用組成物のpHの下限は、3以上であることが好ましい。研磨用組成物のpHが大きくなるにつれて、研磨用組成物による研磨対象物表面の過剰なエッチングが起こる虞を少なくすることができる。
本発明の研磨用組成物の製造方法は、特に制限されず、例えば、酸化剤、非イオン性化合物、および必要に応じて他の成分を、水中で攪拌混合することにより得ることができる。
上述のように、本発明の研磨用組成物は、バリア層、金属配線層、および絶縁膜を有する研磨対象物の研磨に好適に用いられる。よって、本発明は、バリア層、金属配線層、および絶縁膜を有する研磨対象物を本発明の研磨用組成物で研磨する研磨方法を提供する。また、本発明は、バリア層、金属配線層、および絶縁膜を有する研磨対象物を前記研磨方法で研磨する工程を含む基板の製造方法を提供する。
砥粒としてコロイダルシリカ(約70nmの平均二次粒子径(平均一次粒子径35nm、会合度2)10重量%、酸化剤として過酸化水素 0.6重量%、錯化剤としてイセチオン酸 4.2g/L、金属防食剤として1H-BTA 1.2g/L、および下記表2に示す非イオン性化合物 1.5g/Lを、それぞれ前記の濃度となるように水中で攪拌混合し(混合温度:約25℃、混合時間:約10分)、研磨用組成物を調製した。組成物のpHは、水酸化カリウム(KOH)を加え調整し、pHメータにより確認した。また、非イオン性化合物の重量平均分子量は、ポリスチレンを標準物質としたGPC(ゲル浸透クロマトグラフィー)により測定した。
Claims (7)
- バリア層、金属配線層、および絶縁膜を有する研磨対象物を研磨する用途で使用される研磨用組成物であって、
酸化剤と
重量平均分子量が1000以下である非イオン性化合物と、
を含む、研磨用組成物。 - 前記非イオン性化合物はアルキルエーテル鎖を有する化合物である、請求項1に記載の研磨用組成物。
- 前記研磨対象物が低誘電率材料をさらに含む、請求項1~3のいずれか1項に記載の研磨用組成物。
- 前記バリア層がタンタルまたは貴金属を含む、請求項1~4のいずれか1項に記載の研磨用組成物。
- バリア層と金属配線層とを有する研磨対象物を請求項1~5のいずれか1項に記載の研磨用組成物で研磨する、研磨方法。
- バリア層と金属配線層とを有する研磨対象物を請求項6に記載の研磨方法で研磨する工程を含む、基板の製造方法。
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Cited By (2)
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WO2015146468A1 (ja) * | 2014-03-28 | 2015-10-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US10703936B2 (en) | 2016-03-30 | 2020-07-07 | Fujimi Incorporated | Polishing composition |
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US20170243752A1 (en) * | 2014-08-29 | 2017-08-24 | Fujimi Incorporated | Polishing composition and method for producing polishing composition |
US9528030B1 (en) * | 2015-10-21 | 2016-12-27 | Cabot Microelectronics Corporation | Cobalt inhibitor combination for improved dishing |
KR102544643B1 (ko) * | 2015-12-23 | 2023-06-19 | 솔브레인 주식회사 | 연마 슬러리 조성물 및 이를 이용한 연마방법 |
US20200291267A1 (en) * | 2016-03-22 | 2020-09-17 | Basfr Se | Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates |
KR102405560B1 (ko) * | 2017-02-28 | 2022-06-07 | 후지필름 가부시키가이샤 | 연마액, 연마액의 제조 방법, 연마액 원액, 연마액 원액 수용체, 화학적 기계적 연마 방법 |
JP6708994B2 (ja) | 2017-03-27 | 2020-06-10 | 日立化成株式会社 | スラリ及び研磨方法 |
WO2018179061A1 (ja) | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
TW201915130A (zh) * | 2017-09-26 | 2019-04-16 | 日商福吉米股份有限公司 | 研磨用組合物、研磨用組合物的製造方法、研磨方法及半導體基板的製造方法 |
SG11202008797WA (en) * | 2018-03-22 | 2020-10-29 | Hitachi Chemical Co Ltd | Polishing liquid, polishing liquid set, and polishing method |
WO2020021680A1 (ja) | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
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JP5587620B2 (ja) * | 2010-01-25 | 2014-09-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
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- 2012-09-14 JP JP2012203104A patent/JP2014060205A/ja active Pending
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- 2013-08-23 KR KR1020157006279A patent/KR20150055617A/ko not_active IP Right Cessation
- 2013-08-23 US US14/428,297 patent/US20150232705A1/en not_active Abandoned
- 2013-08-23 WO PCT/JP2013/072601 patent/WO2014041991A1/ja active Application Filing
- 2013-08-23 SG SG11201501849RA patent/SG11201501849RA/en unknown
- 2013-08-30 TW TW102131287A patent/TWI609948B/zh active
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JP2006049709A (ja) * | 2004-08-06 | 2006-02-16 | Toshiba Corp | Cmp用スラリー、研磨方法、および半導体装置の製造方法 |
JP2009283751A (ja) * | 2008-05-23 | 2009-12-03 | Fujifilm Corp | 金属用研磨液、及び研磨方法 |
WO2012043418A1 (ja) * | 2010-09-27 | 2012-04-05 | 株式会社 フジミインコーポレーテッド | 表面処理組成物及びそれを用いた表面処理方法 |
Cited By (5)
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WO2015146468A1 (ja) * | 2014-03-28 | 2015-10-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
JPWO2015146468A1 (ja) * | 2014-03-28 | 2017-04-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US10406652B2 (en) | 2014-03-28 | 2019-09-10 | Fujimi Incorporated | Polishing composition and polishing method using the same |
JP2019194329A (ja) * | 2014-03-28 | 2019-11-07 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US10703936B2 (en) | 2016-03-30 | 2020-07-07 | Fujimi Incorporated | Polishing composition |
Also Published As
Publication number | Publication date |
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JP2014060205A (ja) | 2014-04-03 |
SG11201501849RA (en) | 2015-04-29 |
KR20150055617A (ko) | 2015-05-21 |
TWI609948B (zh) | 2018-01-01 |
TW201418434A (zh) | 2014-05-16 |
US20150232705A1 (en) | 2015-08-20 |
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