WO2014040304A1 - 掩膜及其制造方法 - Google Patents

掩膜及其制造方法 Download PDF

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Publication number
WO2014040304A1
WO2014040304A1 PCT/CN2012/081646 CN2012081646W WO2014040304A1 WO 2014040304 A1 WO2014040304 A1 WO 2014040304A1 CN 2012081646 W CN2012081646 W CN 2012081646W WO 2014040304 A1 WO2014040304 A1 WO 2014040304A1
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Prior art keywords
mask
sub
complementary
same plane
overlaps
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PCT/CN2012/081646
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English (en)
French (fr)
Inventor
吴泰必
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US13/702,052 priority Critical patent/US20140069331A1/en
Publication of WO2014040304A1 publication Critical patent/WO2014040304A1/zh
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/90—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof prepared by montage processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to the field of mask technology, and in particular, to a mask and a method of manufacturing the same.
  • OLED Organic Light Emitting
  • Diode Display panels are becoming more and more important. Large size is an unstoppable trend in the development of organic light-emitting diode display panels.
  • the display principle of the organic light emitting diode display panel is different from that of the liquid crystal display panel, and the manufacturing method has certain differences.
  • the organic light emitting diode display panel has an organic material layer, and in the manufacturing process of the organic light emitting diode display panel, the organic material layer is generally formed by an evaporation technique, and the evaporation technology requires a mask.
  • the mask is an important part of the evaporation technology. At present, the size of the mask used in the evaporation process is limited, which restricts the development of the OLED display panel in the direction of large size. In addition, the limited size of the mask tends to cause the organic material layer to adhere to other regions of the thin film transistor array during the evaporation process, affecting the quality of the organic light emitting diode display panel.
  • Another object of the present invention is to provide a mask manufacturing method capable of realizing a large size of a mask and facilitating the development of an organic light emitting diode display panel in a large-sized direction.
  • the present invention provides a mask comprising: a first sub-mask, one side edge of the first sub-mask has a first structure; a second sub-mask, one side edge of the second sub-mask Having a second structure; the first sub-mask and the second sub-mask are juxtaposed together, the first sub-mask and the second sub-mask are in the same plane, the first structure and
  • the second structure is a complementary structure;
  • the first sub-mask has a first surface and a second surface, the first surface and the second surface face away, and the second sub-mask has a third a surface and a fourth surface, the third surface and the fourth surface are facing away, the first sub-mask and the second sub-mask are juxtaposed together, and the first sub-mask is a surface and a third surface of the second sub-mask are in the same plane, a second surface of the first sub-mask and a fourth surface of the second sub-mask are in the same plane; the first structure And the
  • the first structure and the second structure are structures complementary in a first direction, the first direction being a direction perpendicular to the first surface, the first sub-mask The first structure overlaps with the second structure of the second sub-mask in a first direction.
  • the first structure is a buckle
  • the second structure is a snap groove
  • the first structure and the second structure are structures complementary in a second direction, the second direction being parallel to a center of the first sub-mask and the second sub- The direction of the center line of the mask, the first structure of the first sub-mask and the second structure of the second sub-mask overlap in the second direction.
  • the first structure is a toothed projection having a hook
  • the second structure is a toothed recess having a hook groove
  • Another object of the present invention is to provide a mask which can realize a large size of a mask and facilitate the development of an organic light emitting diode display panel in a large-sized direction.
  • the present invention provides a mask comprising: a first sub-mask, a first edge of the first sub-mask has a first structure; a second sub-mask, the second sub-mask One side edge of the film has a second structure; the first sub-mask and the second sub-mask are juxtaposed together, and the first sub-mask and the second sub-mask are in the same plane,
  • the first structure and the second structure are complementary structures.
  • the first sub-mask has a first surface and a second surface, the first surface and the second surface face away, and the second sub-mask has a third surface and a fourth a surface, the third surface and the fourth surface face away, the first sub-mask and the second sub-mask are juxtaposed together, and the first surface and the first sub-mask
  • the third surface of the second sub-mask is located on the same plane, and the second surface of the first sub-mask and the fourth surface of the second sub-mask are in the same plane.
  • the first structure and the second structure are structures complementary in a first direction, the first direction being a direction perpendicular to the first surface, the first sub-mask The first structure overlaps with the second structure of the second sub-mask in a first direction.
  • the first structure is a buckle
  • the second structure is a snap groove
  • the first structure and the second structure are structures complementary in a second direction, the second direction being parallel to a center of the first sub-mask and the second sub- The direction of the center line of the mask, the first structure of the first sub-mask and the second structure of the second sub-mask overlap in the second direction.
  • the first structure is a toothed projection having a hook
  • the second structure is a toothed recess having a hook groove
  • Another object of the present invention is to provide a mask manufacturing method capable of realizing a large size of a mask and facilitating the development of an organic light emitting diode display panel in a large-sized direction.
  • the present invention provides a method of fabricating a mask, the method comprising the steps of: (A) providing a first sub-mask and a second sub-mask, one side of the first sub-mask The edge has a first structure, one side edge of the second sub-mask has a second structure, the first structure and the second structure are complementary structures; (B) the first sub-mask and The second sub-mask is spliced into one body such that the first sub-mask and the second sub-mask are in the same plane, the first structure of the first sub-mask and the second sub-mask The second structure overlaps.
  • the step (A) further includes the steps of: (a1) defining a shape and a position of the first structure and a shape and a position of the second structure such that the first structure a structure complementary to the second structure; (a2) forming the first structure on the first sub-mask, and forming the second structure on the second sub-mask.
  • the first structure of the first sub-mask overlaps with the second structure of the second sub-mask in a first direction, the first direction being perpendicular to the first In a direction of a surface, the first structure is a buckle, and the second structure is a snap groove.
  • the first structure of the first sub-mask overlaps with the second structure of the second sub-mask in a second direction, the second direction being parallel to the a direction of a line connecting a center of a sub-mask and a center of the second sub-mask, the first structure being a toothed protrusion having a clasp, and the second structure being a tooth having a hook groove Sag.
  • the size of the mask can be increased, and the organic material in the manufacturing process of the OLED display panel of the present invention is avoided.
  • the quality of the finished product of the organic light emitting diode display panel is affected, thereby providing conditions for the large size of the organic light emitting diode display panel, and further, manufacturing the display panel according to the organic light emitting diode
  • the mask of the present invention is customized to meet the needs of the manufacturing process of OLED display panels of different sizes.
  • the first structure and the second structure are respectively disposed at edges of the first sub-mask and the second sub-mask, the first structure and the second structure are complementary structures, so that the first sub-mask and the first sub-mask can be
  • the second sub-mask is tightly spliced together to prevent the mask composed of the first sub-mask and the second sub-mask splicing from being loose during operation, and the OLED display panel is prevented from being loose due to the mask Retired during the manufacturing process.
  • FIG. 1 is an isometric view of a first preferred embodiment of a mask of the present invention
  • Figure 2 is a schematic view of the A-A' section of Figure 1;
  • Figure 3 is a schematic illustration of a second preferred embodiment of the mask of the invention.
  • Figure 4 is a schematic view of a third preferred embodiment of the mask of the invention.
  • Figure 5 is a schematic view of a fourth preferred embodiment of the mask of the invention.
  • Fig. 6 is a flow chart showing a method of manufacturing a mask of the present invention.
  • FIG. 1 is an isometric view of a first preferred embodiment of the mask of the present invention
  • FIG. 2 is a schematic view of the AA' cross section of FIG. 3, 4 and 5 are schematic views of second, third and fourth preferred embodiments of the mask of the invention, respectively.
  • the mask of the present invention includes at least two sub-masks, specifically, at least a first sub-mask 101 and a second sub-mask 102. Wherein, one side edge of the first sub-mask 101 has a first structure (for example, the first platform 1011 in FIGS. 1 and 2, the buckle 1014 in FIG. 3, the toothed protrusion 1015 in FIG.
  • first structure and the second structure are complementary structures, that is, where the first structure is flat, the corresponding position of the second structure is also flat, and the first structure has a convex portion, and the second structure corresponds to The position has a depression and vice versa, so that the first structure and the second structure can be brought into close contact with each other.
  • the first sub-mask 101 and the second sub-mask 102 are juxtaposed together, and the first sub-mask 101 and the second sub-mask 102 are in the same plane, the first structure and the second structure.
  • the first sub-mask 101 and the second sub-mask 102 may each have a first structure and a second structure on both side edges, or the first sub-mask 101 may A first structure is disposed on both side edges thereof, and the second sub-mask 102 may be provided with a second structure on both side edges thereof, so that more sub-masks can be spliced together to adapt to the manufacture of a large-sized mask. need.
  • the first sub-mask 101 has a first surface 1012 and a second surface 1013, the first surface 1012 and the second surface 1013 facing away, the second sub-mask 102 having a third surface 1022 and a fourth surface 1023, the third surface 1022 And the fourth surface 1023 faces away, the first sub-mask 101 and the second sub-mask 102 are juxtaposed together, and the first surface 1012 of the first sub-mask 101 and the third surface 1022 of the second sub-mask 102 Located on the same plane, the second surface 1013 of the first sub-mask 101 and the fourth surface 1023 of the second sub-mask 102 are in the same plane.
  • the first structure and the second structure are structures complementary in the first direction, and the first direction is a direction perpendicular to the first surface 1012.
  • the first structure of the first sub-mask 101 overlaps the second structure of the second sub-mask 102 in the first direction.
  • FIG. 1 and FIG. 2 are structures complementary in the first direction, and the first direction is a direction perpendicular to the first surface 1012.
  • the first structure of the first sub-mask 101 overlaps the second structure of the second sub-mask 102 in the first direction.
  • the first structure of the first sub-mask 101 is a first platform 1011, and the bottom surface of the first platform 1011 is coplanar (in the same plane) with the second surface 1013, the first The thickness of the platform 1011 in the first direction is smaller than the thickness of the first sub-mask 101 in the first direction, and the second structure of the second sub-mask 102 is the second platform 1021, and the bottom surface and the third surface of the second platform 1021.
  • the surface 1022 is coplanar, the thickness of the second platform 1021 in the first direction is smaller than the thickness of the second sub-mask 102 in the first direction, and the thickness of the first platform 1011 in the first direction is different from the second platform
  • the sum of the thicknesses of the 1021 in the first direction is equal to or approximately equal to the thickness of the first sub-mask 101 or the second sub-mask 102 in the first direction, that is, the first structure and performance of the first stage 1011 is expressed as
  • the second structure of the second platform 1021 is complementary in a first direction, which is a direction perpendicular to the first surface of the first sub-mask 101; as one of the first structure and the second structure in FIG. Improvement, in FIG.
  • the first structure of the first sub-mask 101 is a buckle 1014
  • the second structure of the 102 is a snap groove 1024 (or another buckle opposite to the direction of the buckle 1014), and the buckle 1014 and the buckle groove 1024 are complementary in the first direction.
  • the buckle 1014 and the snap groove 1024 are used to splicing the first sub-mask 101 and the second sub-mask 102 together and fastened to each other. In this way, the first sub-mask 101 and the second sub-mask 102 can be closely spliced together to prevent the mask composed of the splicing of the first sub-mask 101 and the second sub-mask 102 from being loose during operation. And avoiding the mask being loosened and causing the OLED display panel to be scrapped during the manufacturing process.
  • FIG. 4 and FIG. 5 are plan views of the mask of the present invention.
  • the first structure and the second structure are complementary structures in the second direction, and the second direction is parallel to the first sub- The direction of the line connecting the center of the mask 101 and the center of the second sub-mask 102.
  • the first structure of the first sub-mask 101 overlaps the second structure of the second sub-mask 102 in the second direction.
  • the first structure of the first sub-mask 101 is a toothed protrusion 1015 which is stretched outward from the side of the first sub-mask 101 in a direction perpendicular to the side surface.
  • the second structure of the second sub-mask 102 is a toothed recess 1025 which is recessed inwardly from the side of the second sub-mask 102 in a direction perpendicular to the side surface, the dentate protrusion 1015
  • the shape, the size, the position, and the like coincide with the shape, the size, the position, and the like of the toothed recess 1025, that is, the first structure of the toothed projection 1015 and the first representation of the toothed recess 1025.
  • the two structures are complementary in the second direction; as an improvement to the first structure and the second structure in FIG. 4, in FIG.
  • the first structure of the first sub-mask 101 is a dentate protrusion having a clasp Block 1016
  • the second structure of the second sub-mask 102 is a toothed recess 1026 having a hook groove
  • the toothed protrusion 1016 having the hook and the toothed recess 1026 having the hook groove are in the above a complementary structure in two directions
  • a toothed projection 1016 having a clasp and a toothed recess 1026 having a hook groove for making Sub mask 101 and the second sub-mask 102 are abutted and stitched together.
  • the first sub-mask 101 and the second sub-mask 102 can be closely spliced together to prevent the mask composed of the splicing of the first sub-mask 101 and the second sub-mask 102 from being loose during operation. And avoiding the mask being loosened and causing the OLED display panel to be scrapped during the manufacturing process.
  • the first structure and the second structure may be formed by etching or cutting on the first sub-mask 101 and the second sub-mask 102, respectively, in the first sub-mask 101 and the second sub-mask 102.
  • the shape and/or position of the first structure and the second structure are defined (designed) prior to etching or cutting to form the first structure and the second structure, respectively, such that the first structure and the second structure are complementary structures.
  • Figure 6 is a flow chart of a method of fabricating a mask of the present invention.
  • the mask of the present invention includes at least two sub-masks juxtaposed together, and adjacent two sub-masks are spliced together to form a mask of the present invention.
  • step 601 at least two sub-masks are provided, specifically, at least a first sub-mask 101 and a second sub-mask 102, wherein one side edge of the first sub-mask 101 has a first structure, and the second sub-mask One side edge of the film 102 has a second structure, and the first structure and the second structure are complementary structures, that is, where the first structure is flat, the corresponding position of the second structure is also flat, on the first structure. Where there are protrusions, the corresponding locations of the second structure have depressions, and vice versa, such that the first structure and the second structure can be brought into close contact with one another.
  • the first sub-mask 101 and the second sub-mask 102 may each have a first structure and a second structure on both side edges, or the first sub-mask 101 may be provided on both sides thereof.
  • the second sub-mask 102 can be provided with a second structure on both side edges thereof, so that more sub-masks can be spliced together to meet the needs of manufacturing a large-sized mask.
  • the shape and position of the first structure and the shape and position of the second structure are defined such that the first structure and the second structure are complementary structures.
  • the first structure and the second structure are two platforms (the first platform 1011 and the second platform 1021) having different bottom surfaces and opposite stretching directions; as shown in FIG. 3, the first One structure is a buckle 1014, and the second structure is a buckle groove 1024 (or another buckle opposite to the direction of the buckle 1014); as shown in FIG. 4, the first structure is a toothed protrusion 1015.
  • the second structure is a toothed recess 1025; as shown in FIG. 5, the first structure is a toothed protrusion 1016 having a hook, and the second structure is a toothed recess 1026 having a hook groove.
  • etching or dicing is performed on the first sub-mask 101 to form a first structure, and etching or dicing is performed on the second sub-mask 102 to form a second structure.
  • step 604 the first sub-mask 101 and the second sub-mask 102 are spliced together, such that the first structure of the first sub-mask 101 and the second structure of the second sub-mask 102 are overlapped.
  • the first structure of the first sub-mask 101 overlaps with the second structure of the second sub-mask 102 in a first direction, the first direction is a direction perpendicular to the first surface 1012, and/or the first sub-mask
  • the first structure of the film 101 overlaps with the second structure of the second sub-mask 102 in a second direction, the second direction being a line parallel to the center of the first sub-mask 101 and the center of the second sub-mask 102
  • the first surface 1012 of the first sub-mask 101 and the third surface 1022 of the second sub-mask 102 are in the same plane, the second surface 1013 of the first sub-mask 101 and the second sub-mask 102
  • the fourth surface 1023 is located on the same plane.
  • the size of the mask can be increased, and the organic material is adhered to the organic material during the manufacturing process of the OLED display panel of the present invention.
  • the other areas of the thin film transistor array substrate affect the quality of the finished product of the OLED display panel, thereby providing conditions for the large size of the OLED display panel, and can also be customized according to the actual situation of the OLED display panel manufacturing process.
  • the mask of the present invention is suitable for the manufacturing process of OLED display panels of different sizes.

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Description

掩膜及其制造方法 技术领域
本发明涉及掩膜技术领域，特别涉及一种掩膜及其制造方法。
 背景技术
目前，随着技术的发展，社会对有机发光二极管（OLED，Organic Light Emitting Diode）显示面板的重视程度越来越高。而大尺寸化是有机发光二极管显示面板的技术发展过程中的一个不可阻挡的趋势。
有机发光二极管显示面板的显示原理与液晶显示面板的显示原理不同，制造方法因此有一定的差别。其中，有机发光二极管显示面板中具有有机材料层，而在有机发光二极管显示面板的制造过程中，此有机材料层一般是通过蒸镀技术来形成，而蒸镀技术需要用到掩膜。
掩膜是蒸镀技术中的一个重要的部件。目前，用在蒸镀工艺上的掩膜尺寸有限，这制约了有机发光二极管显示面板往大尺寸化的方向发展。此外，掩膜的尺寸有限往往会导致在蒸镀工序中有机材料层附着于薄膜晶体管阵列的其它区域，影响有机发光二极管显示面板的品质。
故，有必要提出一种新的技术方案，以解决上述技术问题。
 技术问题
本发明的一个目的在于提供一种掩膜，其能可以实现掩膜的大尺寸化，有利于有机发光二极管显示面板往大尺寸化方向发展。
本发明的另一个目的在于提供一种掩膜的制造方法，其能可以实现掩膜的大尺寸化，有利于有机发光二极管显示面板往大尺寸化方向发展。
 技术解决方案
本发明提供了一种掩膜，包括：第一子掩膜，所述第一子掩膜的一侧边缘具有第一结构；第二子掩膜，所述第二子掩膜的一侧边缘具有第二结构；所述第一子掩膜和所述第二子掩膜并列设置于一起，所述第一子掩膜与所述第二子掩膜位于同一平面，所述第一结构与所述第二结构为互补的结构；所述第一子掩膜具有第一表面和第二表面，所述第一表面和所述第二表面背向，所述第二子掩膜具有第三表面和第四表面，所述第三表面和所述第四表面背向，所述第一子掩膜和所述第二子掩膜并列设置于一起，并且所述第一子掩膜的第一表面和所述第二子掩膜的第三表面位于同一平面，所述第一子掩膜的第二表面和所述第二子掩膜的第四表面位于同一平面；所述第一结构和第二结构均可以通过分别在所述第一子掩膜和所述第二子掩膜上进行蚀刻或切割来形成，所述第一子掩膜的第一结构和所述第二子掩膜的第二结构叠合在一起。
在上述掩膜中，所述第一结构和所述第二结构为在第一方向上互补的结构，所述第一方向为垂直于所述第一表面的方向，所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第一方向上重叠。
在上述掩膜中，所述第一结构为卡扣，所述第二结构为卡扣凹槽。
在上述掩膜中，所述第一结构和所述第二结构为在第二方向上互补的结构，所述第二方向为平行于所述第一子掩膜的中心和所述第二子掩膜的中心连线的方向，所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第二方向上重叠。
在上述掩膜中，所述第一结构为具有扣钩的齿状突块，所述第二结构为具有扣钩凹槽的齿状凹陷。
本发明的另一个目的在于提供一种掩膜，其能可以实现掩膜的大尺寸化，有利于有机发光二极管显示面板往大尺寸化方向发展。
为解决上述问题，本发明提供了一种掩膜，包括：第一子掩膜，所述第一子掩膜的一侧边缘具有第一结构；第二子掩膜，所述第二子掩膜的一侧边缘具有第二结构；所述第一子掩膜和所述第二子掩膜并列设置于一起，所述第一子掩膜与所述第二子掩膜位于同一平面，所述第一结构与所述第二结构为互补的结构。
在上述掩膜中，所述第一子掩膜具有第一表面和第二表面，所述第一表面和所述第二表面背向，所述第二子掩膜具有第三表面和第四表面，所述第三表面和所述第四表面背向，所述第一子掩膜和所述第二子掩膜并列设置于一起，并且所述第一子掩膜的第一表面和所述第二子掩膜的第三表面位于同一平面，所述第一子掩膜的第二表面和所述第二子掩膜的第四表面位于同一平面。
在上述掩膜中，所述第一结构和所述第二结构为在第一方向上互补的结构，所述第一方向为垂直于所述第一表面的方向，所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第一方向上重叠。
在上述掩膜中，所述第一结构为卡扣，所述第二结构为卡扣凹槽。
在上述掩膜中，所述第一结构和所述第二结构为在第二方向上互补的结构，所述第二方向为平行于所述第一子掩膜的中心和所述第二子掩膜的中心连线的方向，所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第二方向上重叠。
在上述掩膜中，所述第一结构为具有扣钩的齿状突块，所述第二结构为具有扣钩凹槽的齿状凹陷。
本发明的另一个目的在于提供一种掩膜的制造方法，其能可以实现掩膜的大尺寸化，有利于有机发光二极管显示面板往大尺寸化方向发展。
为解决上述问题，本发明提供了一种掩膜的制造方法，所述方法包括以下步骤：（A）提供第一子掩膜和第二子掩膜，所述第一子掩膜的一侧边缘具有第一结构，所述第二子掩膜的一侧边缘具有第二结构，所述第一结构与所述第二结构为互补的结构；（B）将所述第一子掩膜和所述第二子掩膜拼接为一体，使得所述第一子掩膜与所述第二子掩膜位于同一平面，所述第一子掩膜的第一结构和所述第二子掩膜的第二结构重叠。
在上述掩膜的制造方法中，所述步骤（A）还包括以下步骤：（a1）定义所述第一结构的形状和位置以及所述第二结构的形状和位置，使得所述第一结构与所述第二结构为互补的结构；（a2）在所述第一子掩膜上形成所述第一结构，以及在所述第二子掩膜上形成所述第二结构。
在上述掩膜的制造方法中，所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第一方向上重叠，所述第一方向为垂直于所述第一表面的方向，所述第一结构为卡扣，所述第二结构为卡扣凹槽。
在上述掩膜的制造方法中，所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第二方向上重叠，所述第二方向为平行于所述第一子掩膜的中心和所述第二子掩膜的中心的连线的方向，所述第一结构为具有扣钩的齿状突块，所述第二结构为具有扣钩凹槽的齿状凹陷。
 有益效果
相对于现有技术，在本发明中，由于将至少两个子掩膜拼接在一起，因此可以实现掩膜的大尺寸化，避免了在本发明的有机发光二极管显示面板的制造工序中，有机材料经过蒸镀后附着于薄膜晶体管阵列基板的其它区域，影响有机发光二极管显示面板的成品品质，从而为有机发光二极管显示面板的大尺寸化提供了条件，此外，还可以根据有机发光二极管显示面板制造过程中的实际情况定制本发明的掩膜，适应不同尺寸的有机发光二极管显示面板的制造工序的需要。此外，由于第一子掩膜和第二子掩膜的边缘处分别设置了第一结构和第二结构，该第一结构和第二结构为互补的结构，因此可以使得第一子掩膜和第二子掩膜紧密地拼接在一起，防止由第一子掩膜和第二子掩膜拼接组成的掩膜在工作该过程中松散，以及避免了掩膜因为松散而造成有机发光二极管显示面板在制造过程中报废。
 附图说明
图1为本发明的掩膜的第一较佳实施例的等轴测图；
图2为图1中A-A’截面的示意图；
图3为发明的掩膜的第二较佳实施例的示意图；
图4为发明的掩膜的第三较佳实施例的示意图；
图5为发明的掩膜的第四较佳实施例的示意图；
图6为本发明的掩膜的制造方法的流程图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。
参考图1、图2、图3、图4和图5，图1为本发明的掩膜的第一较佳实施例的等轴测图，图2为图1中A-A’截面的示意图，图3、图4和图5分别为发明的掩膜的第二、第三和第四较佳实施例的示意图。本发明的掩膜包括至少两个子掩膜，具体地，至少包括第一子掩膜101和第二子掩膜102。其中，第一子掩膜101的一侧边缘具有第一结构（例如，图1和图2中的第一平台1011，图3中的卡扣1014，图4中的齿状突块1015和图5中的具有扣钩的齿状突块1016）；第二子掩膜的一侧边缘具有第二结构（例如，图1和图2中的第二平台1021，图3中的卡扣凹槽1024，图4中的齿状凹陷1025和图5中的具有扣钩凹槽的齿状凹陷1026）。第一结构与第二结构为互补的结构，即，在第一结构上为平坦的地方，第二结构的对应位置也为平坦，在第一结构上具有凸起的地方，第二结构的对应的位置具有凹陷，反之亦然，使得第一结构和第二结构可以实现互相紧贴。
在本发明的掩膜中，第一子掩膜101和第二子掩膜102并列设置于一起，第一子掩膜101与第二子掩膜102位于同一平面，第一结构与第二结构叠合在一起，在本发明的掩膜中，第一子掩膜101和第二子掩膜102均可在两侧边缘设置第一结构和第二结构，或者，第一子掩膜101可以在其两侧边缘均设置第一结构，第二子掩膜102可以在其两侧边缘均设置第二结构，这样，更多的子掩膜便可以拼接在一起，适应制造大尺寸掩膜的需要。
第一子掩膜101具有第一表面1012和第二表面1013，第一表面1012和第二表面1013背向，第二子掩膜102具有第三表面1022和第四表面1023，第三表面1022和第四表面1023背向，第一子掩膜101和第二子掩膜102并列设置于一起，并且第一子掩膜101的第一表面1012和第二子掩膜102的第三表面1022位于同一平面，第一子掩膜101的第二表面1013和第二子掩膜102的第四表面1023位于同一平面。
如图1、图2和图3所示，第一结构和第二结构为在第一方向上互补的结构，第一方向为垂直于第一表面1012的方向。第一子掩膜101的第一结构与第二子掩膜102的第二结构在第一方向上重叠。具体地，在图1和图2中，第一子掩膜101的第一结构为第一平台1011，该第一平台1011的底面与第二表面1013共面（处于同一平面），该第一平台1011在第一方向上的厚度小于第一子掩膜101在第一方向上的厚度，第二子掩膜102的第二结构为第二平台1021，该第二平台1021的底面与第三表面1022共面，该第二平台1021在第一方向上的厚度小于第二子掩膜102在第一方向上的厚度，并且，第一平台1011的在第一方向上的厚度与第二平台1021在第一方向上的厚度之和等于或约等于第一子掩膜101或第二子掩膜102在第一方向上的厚度，即，表现为第一平台1011的第一结构和表现为第二平台1021的第二结构在第一方向上互补，该第一方向为垂直于第一子掩膜101的第一表面的方向；作为对图2中的第一结构和第二结构的一种改进，在图3中，第一子掩膜101的第一结构为卡扣1014，第二子掩膜102的第二结构为卡扣凹槽1024（或者是与该卡扣1014的方向相反的另一卡扣），该卡扣1014和卡扣凹槽1024为在上述第一方向上互补的结构，该卡扣1014和卡扣凹槽1024用于使第一子掩膜101和第二子掩膜102拼接在一起并且相互紧扣。这样，可以使得第一子掩膜101和第二子掩膜102紧密地拼接在一起，防止由第一子掩膜101和第二子掩膜102拼接组成的掩膜在工作该过程中松散，以及避免了掩膜因为松散而造成有机发光二极管显示面板在制造过程中报废。
如图4和图5所示，图4和图5均为本发明的掩膜的俯视图，第一结构和第二结构为在第二方向上互补的结构，第二方向为平行于第一子掩膜101的中心和第二子掩膜102的中心的连线的方向。第一子掩膜101的第一结构与第二子掩膜102的第二结构在第二方向上重叠。具体地，在图4中，第一子掩膜101的第一结构为齿状突块1015，该齿状突块1015自第一子掩膜101的侧面沿垂直于该侧面的方向往外拉伸，第二子掩膜102的第二结构为齿状凹陷1025，该齿状凹陷1025自第二子掩膜102的侧面沿垂直于该侧面的方向往内缩陷，该齿状突块1015的形状、大小、所处的位置等与该齿状凹陷1025的形状、大小、所处的位置等互相吻合，即，表现为齿状突块1015的第一结构与表现为齿状凹陷1025的第二结构在第二方向上互补；作为对图4中的第一结构和第二结构的一种改进，在图5中，第一子掩膜101的第一结构为具有扣钩的齿状突块1016，第二子掩膜102的第二结构为具有扣钩凹槽的齿状凹陷1026，该具有扣钩的齿状突块1016和具有扣钩凹槽的齿状凹陷1026为在上述第二方向上互补的结构，具有扣钩的齿状突块1016和具有扣钩凹槽的齿状凹陷1026用于使第一子掩膜101和第二子掩膜102拼接在一起并且相互紧扣。这样，可以使得第一子掩膜101和第二子掩膜102紧密地拼接在一起，防止由第一子掩膜101和第二子掩膜102拼接组成的掩膜在工作该过程中松散，以及避免了掩膜因为松散而造成有机发光二极管显示面板在制造过程中报废。
上述第一结构和第二结构均可以通过分别在第一子掩膜101和第二子掩膜102上进行蚀刻或切割来形成的，在对第一子掩膜101和第二子掩膜102进行蚀刻或切割以分别形成第一结构和第二结构之前，定义（设计）第一结构和第二结构的形状和/或位置，使得第一结构合第二结构为互补的结构。
参考图6，图6为本发明的掩膜的制造方法的流程图。本发明的掩膜包括至少两个子掩膜，该至少两个子掩膜并列设置在一起，并且相邻的两个子掩膜相互拼接为一体，以组成本发明的掩膜。
在步骤601，提供至少两个子掩膜，具体地，至少第一子掩膜101和第二子掩膜102，其中，第一子掩膜101的一侧边缘具有第一结构，第二子掩膜102的一侧边缘具有第二结构，第一结构与第二结构为互补的结构，即，在第一结构上为平坦的地方，第二结构的对应位置也为平坦，在第一结构上具有凸起的地方，第二结构的对应的位置具有凹陷，反之亦然，使得第一结构和第二结构可以实现互相紧贴。在上述方法中，第一子掩膜101和第二子掩膜102均可在两侧边缘设置第一结构和第二结构，或者，第一子掩膜101可以在其两侧边缘均设置第一结构，第二子掩膜102可以在其两侧边缘均设置第二结构，这样，更多的子掩膜便可以拼接在一起，适应制造大尺寸掩膜的需要。
在步骤602，定义第一结构的形状和位置以及第二结构的形状和位置，使得第一结构与第二结构为互补的结构。例如，如图1和2所示，该第一结构和第二结构为底面不同以及拉伸方向相反的两个平台（第一平台1011和第二平台1021）；如图3所示，该第一结构为卡扣1014，第二结构为卡扣凹槽1024（或者是与该卡扣1014的方向相反的另一卡扣）；如图4所示，该第一结构为齿状突块1015，该第二结构为齿状凹陷1025；如图5所示，该第一结构为具有扣钩的齿状突块1016，该第二结构为具有扣钩凹槽的齿状凹陷1026。
在步骤603，在第一子掩膜101上进行蚀刻或切割以形成第一结构，以及在第二子掩膜102上进行蚀刻或切割以形成第二结构。
在步骤604，将第一子掩膜101和第二子掩膜102拼接为一体，使得第一子掩膜101的第一结构和第二子掩膜102的第二结构叠合在一起，具体地，第一子掩膜101的第一结构与第二子掩膜102的第二结构在第一方向上重叠，第一方向为垂直于第一表面1012的方向，和/或第一子掩膜101的第一结构与第二子掩膜102的第二结构在第二方向上重叠，第二方向为平行于第一子掩膜101的中心和第二子掩膜102的中心的连线的方向，并且第一子掩膜101的第一表面1012和第二子掩膜102的第三表面1022位于同一平面，第一子掩膜101的第二表面1013和第二子掩膜102的第四表面1023位于同一平面。
在本发明中，由于将至少两个子掩膜拼接在一起，因此可以实现掩膜的大尺寸化，避免了在本发明的有机发光二极管显示面板的制造工序中，有机材料经过蒸镀后附着于薄膜晶体管阵列基板的其它区域，影响有机发光二极管显示面板的成品品质，从而为有机发光二极管显示面板的大尺寸化提供了条件，此外，还可以根据有机发光二极管显示面板制造过程中的实际情况定制本发明的掩膜，适应不同尺寸的有机发光二极管显示面板的制造工序的需要。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
 本发明的实施方式
工业实用性
序列表自由内容

Claims (15)

  1. 一种掩膜，其包括：
    第一子掩膜，所述第一子掩膜的一侧边缘具有第一结构；
    第二子掩膜，所述第二子掩膜的一侧边缘具有第二结构；
    所述第一子掩膜和所述第二子掩膜并列设置于一起，所述第一子掩膜与所述第二子掩膜位于同一平面，所述第一结构与所述第二结构为互补的结构；
    所述第一子掩膜具有第一表面和第二表面，所述第一表面和所述第二表面背向，所述第二子掩膜具有第三表面和第四表面，所述第三表面和所述第四表面背向，所述第一子掩膜和所述第二子掩膜并列设置于一起，并且所述第一子掩膜的第一表面和所述第二子掩膜的第三表面位于同一平面，所述第一子掩膜的第二表面和所述第二子掩膜的第四表面位于同一平面；
    所述第一结构和第二结构均可以通过分别在所述第一子掩膜和所述第二子掩膜上进行蚀刻或切割来形成，所述第一子掩膜的第一结构和所述第二子掩膜的第二结构叠合在一起。
  2. 根据权利要求1所述的掩膜，其中
    所述第一结构和所述第二结构为在第一方向上互补的结构，所述第一方向为垂直于所述第一表面的方向，所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第一方向上重叠。
  3. 根据权利要求2所述的掩膜，其中
    所述第一结构为卡扣，所述第二结构为卡扣凹槽。
  4. 根据权利要求1所述的掩膜，其中
    所述第一结构和所述第二结构为在第二方向上互补的结构，所述第二方向为平行于所述第一子掩膜的中心和所述第二子掩膜的中心连线的方向，所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第二方向上重叠。
  5. 根据权利要求4所述的掩膜，其中
    所述第一结构为具有扣钩的齿状突块，所述第二结构为具有扣钩凹槽的齿状凹陷。
  6. 一种掩膜，其包括：
    第一子掩膜，所述第一子掩膜的一侧边缘具有第一结构；
    第二子掩膜，所述第二子掩膜的一侧边缘具有第二结构；
    所述第一子掩膜和所述第二子掩膜并列设置于一起，所述第一子掩膜与所述第二子掩膜位于同一平面，所述第一结构与所述第二结构为互补的结构。
  7. 根据权利要求6所述的掩膜，其中
    所述第一子掩膜具有第一表面和第二表面，所述第一表面和所述第二表面背向，所述第二子掩膜具有第三表面和第四表面，所述第三表面和所述第四表面背向，所述第一子掩膜和所述第二子掩膜并列设置于一起，并且所述第一子掩膜的第一表面和所述第二子掩膜的第三表面位于同一平面，所述第一子掩膜的第二表面和所述第二子掩膜的第四表面位于同一平面。
  8. 根据权利要求7所述的掩膜，其中
    所述第一结构和所述第二结构为在第一方向上互补的结构，所述第一方向为垂直于所述第一表面的方向，所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第一方向上重叠。
  9. 根据权利要求8所述的掩膜，其中
    所述第一结构为卡扣，所述第二结构为卡扣凹槽。
  10. 根据权利要求7所述的掩膜，其中
    所述第一结构和所述第二结构为在第二方向上互补的结构，所述第二方向为平行于所述第一子掩膜的中心和所述第二子掩膜的中心连线的方向，所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第二方向上重叠。
  11. 根据权利要求10所述的掩膜，其中
    所述第一结构为具有扣钩的齿状突块，所述第二结构为具有扣钩凹槽的齿状凹陷。
  12. 一种掩膜的制造方法，其中
    所述方法包括以下步骤：
    （A）提供第一子掩膜和第二子掩膜，所述第一子掩膜的一侧边缘具有第一结构，所述第二子掩膜的一侧边缘具有第二结构，所述第一结构与所述第二结构为互补的结构；
    （B）将所述第一子掩膜和所述第二子掩膜拼接为一体，使得所述第一子掩膜与所述第二子掩膜位于同一平面，所述第一子掩膜的第一结构和所述第二子掩膜的第二结构重叠。
  13. 根据权利要求12所述的掩膜的制造方法，其中
    所述步骤（A）还包括以下步骤：
    （a1）定义所述第一结构的形状和位置以及所述第二结构的形状和位置，使得所述第一结构与所述第二结构为互补的结构；
    （a2）在所述第一子掩膜上形成所述第一结构，以及在所述第二子掩膜上形成所述第二结构。
  14. 根据权利要求13所述的掩膜的制造方法，其中
    所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第一方向上重叠，所述第一方向为垂直于所述第一表面的方向，所述第一结构为卡扣，所述第二结构为卡扣凹槽。
  15. 根据权利要求13所述的掩膜的制造方法，其中
    所述第一子掩膜的第一结构与所述第二子掩膜的第二结构在第二方向上重叠，所述第二方向为平行于所述第一子掩膜的中心和所述第二子掩膜的中心的连线的方向，所述第一结构为具有扣钩的齿状突块，所述第二结构为具有扣钩凹槽的齿状凹陷。
PCT/CN2012/081646 2012-09-12 2012-09-20 掩膜及其制造方法 Ceased WO2014040304A1 (zh)

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