WO2014035143A1 - Substrat de varistor indéformable et procédé de production associé - Google Patents

Substrat de varistor indéformable et procédé de production associé Download PDF

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Publication number
WO2014035143A1
WO2014035143A1 PCT/KR2013/007731 KR2013007731W WO2014035143A1 WO 2014035143 A1 WO2014035143 A1 WO 2014035143A1 KR 2013007731 W KR2013007731 W KR 2013007731W WO 2014035143 A1 WO2014035143 A1 WO 2014035143A1
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WO
WIPO (PCT)
Prior art keywords
layer
barista
bonding layer
thin film
film bonding
Prior art date
Application number
PCT/KR2013/007731
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English (en)
Korean (ko)
Inventor
우경환
단성백
Original Assignee
㈜ 아모엘이디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR20130039268A external-priority patent/KR101483259B1/ko
Application filed by ㈜ 아모엘이디 filed Critical ㈜ 아모엘이디
Priority to US14/424,955 priority Critical patent/US9391053B2/en
Publication of WO2014035143A1 publication Critical patent/WO2014035143A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Definitions

  • the present invention relates to a non-shrink barista substrate and a method of manufacturing the same, and more particularly, to a non-shrink barista substrate having a low shrinkage rate during firing, high mechanical strength, and good heat dissipation efficiency.
  • LEDs Light emitting diodes
  • the light emitting diode has a disadvantage in that it is weak to static electricity or reverse voltage. Therefore, when the LED is used in preparation for static electricity and reverse voltage, a zener diode or barista is connected in parallel with the LED chip.
  • the method of packaging the Zener diode or barista integrally with the LED chip has problems such as space limitation due to additional processes, an increase in the number of processes and an increase in size due to additional mounting, and an increase in manufacturing cost.
  • the light generated from the LED chip is scattered and refracted by a zener diode or barista placed on the same plane as the LED chip, making it difficult to efficiently control the direction of light.
  • a method of embedding a zener diode in a substrate has been used.
  • the substrate including the device is provided with an inner electrode and an outer electrode, the inner electrode is printed and sintered between the sheets of the substrate to be laminated.
  • the outer electrode is connected with the inner electrode.
  • An object of the present invention is to enhance the bonding strength and increase the bonding reliability in the heterojunction of the reinforcing layer and the barista layer.
  • an object of the present invention is to ensure the dimensional accuracy by joining the molded body by a non-shrinkage plastic method as the thin film bonding layer is formed on the surface of the reinforcing layer.
  • an object of the present invention is to further improve the mechanical strength of the barista substrate as a thin film bonding layer is formed on the surface of the reinforcing layer.
  • the non-shrink barista substrate according to the present invention for achieving the above object the reinforcement layer formed of a ceramic; A thin film bonding layer formed on the surface of the reinforcing layer; A first barista layer formed on the thin film bonding layer and having a plurality of internal electrode layers; And an external electrode layer formed on an upper surface of the first barista layer and electrically connected to the internal electrode layer through a conductive material filled in a via hole formed through the first barista layer, the thin film bonding layer, and the reinforcement layer. It includes;
  • the present invention may further include a first bonding layer formed between the thin film bonding layer and the first barista layer.
  • the external electrode layer is formed on an upper surface of the first barista layer, the conductive material filled in the via hole formed through the first barista layer, the first bonding layer, the thin film bonding layer and the reinforcing layer. It may be electrically connected to the inner electrode layer through.
  • the present invention may further include a second barista layer formed under the thin film bonding layer and having a plurality of internal electrode layers therein.
  • the present invention may further include a second bonding layer formed between the thin film bonding layer and the second barista layer.
  • the external electrode layer is formed on an upper surface of the first barista layer and a lower surface of the second barista layer, and includes the first barista layer, the thin film bonding layer, the reinforcement layer, and the second barista layer. It may be electrically connected to the internal electrode layer through a conductive material filled in the via hole formed through the through hole.
  • the thin film bonding layer may be pre-fired to implement an oxide layer.
  • the first bonding layer is ZnO 75 to 95 parts by weight, Pr 2 O 5 0 to 5 parts by weight, Bi 2 O 3 5 to 15 parts by weight, Sb 2 with respect to 100 parts by weight of the total ZnO-based material O 3 0 to 5 parts by weight may have a composition.
  • the second bonding layer is ZnO 75 to 95 parts by weight, Pr 2 O 5 0 to 5 parts by weight, Bi 2 O 3 5 to 15 parts by weight, Sb 2 based on 100 parts by weight of the total ZnO-based material O 3 0 to 5 parts by weight may have a composition.
  • the material of the thin film bonding layer may be at least one of SiO 2 , CuO, TiO 2 and Cr 2 O 3 .
  • a method of manufacturing a non-shrunk barista substrate according to the present invention for achieving the above object includes the steps of forming a reinforcing layer formed of ceramic; Forming a thin film bonding layer on the surface of the reinforcing layer; Forming a first barista layer including a plurality of internal electrode layers on the thin film bonding layer; Firing a barista molded body comprising the reinforcement layer, the thin film bonding layer, and the first barista layer; And forming an outer electrode layer electrically connected to the inner electrode layer through a conductive material filled in the via hole formed through the first barista layer, the thin film bonding layer, and the reinforcement layer.
  • the present invention after the step of forming the thin film bonding layer, further comprising the step of forming a first bonding layer on top of the thin film bonding layer, wherein the firing step comprises the first bonding layer Can be done.
  • the present invention may further include forming a second barista layer having a plurality of internal electrode layers below the thin film bonding layer after the forming of the first barista layer.
  • the step may include the second barista layer.
  • the present invention may further include forming a second bonding layer under the thin film bonding layer before the forming of the second barista layer, and the firing may include the second bonding layer. It may be made, including.
  • the bonding force is enhanced and the bonding reliability is increased. There is.
  • the method of manufacturing a non-shrunk barista substrate and a non-shrink barista substrate according to the present invention has the effect of securing the dimensional accuracy by joining the molded body in a non-shrink-fired method as the thin film bonding layer is formed on the surface of the reinforcing layer. .
  • the method of manufacturing a non-shrink varistor substrate and a non-shrink varistor substrate according to the present invention has the effect of improving the mechanical strength of the barista substrate as the thin film bonding layer is formed on the surface of the reinforcing layer.
  • FIG. 1 is a side cross-sectional view of a non-contraction varistor substrate according to the present invention.
  • FIG. 2 is a perspective cross-sectional view of the non-contraction varistor substrate according to the present invention.
  • FIG 3 is a view for explaining the reinforcement layer and the thin film bonding layer of the non-contraction varistor substrate according to the present invention.
  • FIG. 4 is a flowchart illustrating a method of manufacturing a non-shrink barista substrate according to the present invention.
  • FIG. 5 is a flowchart of another embodiment of a method of manufacturing a non-shrink barista substrate according to the present invention.
  • Figure 6 is a flow chart of another embodiment of a method for manufacturing a non-shrink barista substrate according to the present invention.
  • the non-contraction varistor substrate 100 may include a reinforcing layer 10, a thin film bonding layer 20, a first bonding layer 30, and a second bonding. And a layer 40, a first barista layer 50, a second barista layer 60, external electrode layers 70a and 70b, a conductive material 80, and a light emitting device 90.
  • the reinforcement layer 10 may be made of at least one of Al 2 O 3 , AlN, and MgO. Such a reinforcement layer 10 may be plate-shaped. The reinforcement layer 10 may have at least one via hole on one side.
  • the thin film bonding layer 20 is formed on the surface of the reinforcement layer 10 formed of postfired ceramic.
  • the material of the thin film bonding layer 20 may be at least one of SiO 2 , CuO, and Cr 2 O 3 .
  • the oxide layer may be realized by preliminary baking after constructing the thin film bonding layer 20, but it may not be subjected to prefiring depending on the material. Due to the thin film bonding layer 20, when the barista molded body is fired, the bonding force is increased between the reinforcing layer 10 formed of the calcined ceramic and the barista layers 50 and 60.
  • non-shrink barista substrate 100 is 0 to 0.9% by bonding the barista layers 50 and 60 to the reinforcing layer 10 having the thin film bonding layer 20 formed on the surface thereof. Shrinkage allows precise dimensioning.
  • the first bonding layer 30 and the second bonding layer 40 are formed on the upper and lower surfaces of the reinforcing layer 10, respectively.
  • the first bonding layer 30 and the second bonding layer 40 may include at least one via hole at a position corresponding to the position of the via hole of the reinforcing layer 10.
  • the first bonding layer 30 and the second bonding layer 40 may include at least one of ZnO, Pr 2 O 5 , Bi 2 O 3, and Sb 2 O 3 .
  • the first bonding layer 30 and the second bonding layer 40 may increase the binding force between the reinforcing layer 10 and the first barista layer 50 and the second barista layer 60 described later. Is formed.
  • the first bonding layer 30 and the second bonding layer 40 may be formed including 75 to 95 parts by weight of ZnO and 5 to 15 parts by weight of Bi 2 O 3 . have.
  • the first bonding layer 30 and the second bonding layer 40 may be formed by further comprising 0 to 5 parts by weight of Pr 2 O 5, and 0 to 5 parts by weight of Sb 2 O 3 .
  • the first bonding layer 30 and the second bonding layer 40 may be formed such that the firing temperature is approximately 900 ° C.
  • the non-shrink barista substrate 100 according to the present invention is that the thin film bonding layer 20 is present on the surface of the reinforcing layer 10 without the first bonding layer 30 and the second bonding layer 40. Accordingly, it may be combined with the barista layers 50 and 60 formed on the upper and lower portions of the thin film bonding layer 20.
  • the first barista layer 50 is formed on the first bonding layer 30.
  • the second barista layer 60 is formed under the second bonding layer 40.
  • the first barista layer 50 and the second barista layer 60 are barista devices that include an antistatic function.
  • Varistor is an abbreviation for Variable Resistor.
  • Such a barista element refers to a nonlinear semiconductor resistance element whose resistance value is changed by an applied voltage. When the applied voltage is greater than or equal to a certain magnitude, the device discharges electricity to protect the device.
  • the first barista layer 50 and the second barista layer 60 may be formed of a ZnO-based substrate having good thermal conductivity and reflectivity.
  • the first barista layer 50 and the second barista layer 60 may have a structure in which a plurality of green sheets are stacked.
  • the plurality of green sheets may be manufactured by the following method.
  • additives such as Bi 2 O 3 , Sb 2 O 3 , and at least one of Co 3 O 4 , Nd 2 O 3 , and Pr 6 O 11 are added to the desired composition.
  • the raw material powder is prepared by ball milling a ZnO powder having a composition as described above with a solvent such as water or alcohol for 24 hours.
  • PVB-based binder (binder) is measured as an additive to the raw material powder, about 6 wt%, and then dissolved in toluene / alcohol (toluene / alcohol) -based solvent.
  • the slurry is then milled and mixed for about 24 hours in a small ball mill.
  • Such a slurry can be formed into a plurality of green sheets of a desired size by a method such as a doctor blade.
  • Each of the green sheets of the first barista layer 50 and the second barista layer 60 may be formed by printing the first internal electrode layer 55 and the second internal electrode layer 65.
  • the first inner electrode layer 55 and the second inner electrode layer 65 may not be printed on the remaining green sheets.
  • the first internal electrode layer 55 includes a first sub internal electrode layer 55a electrically connected to the first pole and a second sub internal electrode layer 55b electrically connected to a second pole having a polarity opposite to that of the first pole. It is configured to include.
  • the second internal electrode layer 65 includes a first sub internal electrode layer 65a electrically connected to the first pole and a second sub internal electrode layer 65b electrically connected to a second pole having a polarity opposite to that of the first pole. It is configured to include.
  • the first internal electrode layer 55 and the second internal electrode layer 65 may be formed of Ag or AgPd.
  • each of the first internal electrode layer 55 and the second internal electrode layer 65 may include at least one via hole at a position corresponding to the position of the via hole of the reinforcement layer 10.
  • the first barista layer 50 and the second barista layer 60 may be formed to have a firing temperature of approximately 1000 to 1100 ° C.
  • a molded body including the reinforcing layer 10, the first bonding layer 30, the second bonding layer 40, the first barista layer 50, and the second barista layer 60 is called a barista molded body. Order.
  • the first bonding layer 30 and the second bonding layer 40 are fired faster than the first barista layer 50 and the second barista layer 60 and at the same time strengthened.
  • the binding force between the layer 10 and the first barista layer 50 and the second barista layer 60 is enhanced.
  • the non-shrink varistor substrate 100 according to the present invention is the first bonding, if the first bonding layer 30 or the upper portion of the thin film bonding layer 20 without the second barista layer 60 is present It is also possible to configure only the first barista layer 50 present on top of the layer.
  • the external electrode layers 70a and 70b are formed on an upper surface of the first barista layer 50 and a lower surface of the second barista layer 60, and the first barista layer 50 and the thin film bonding layer. 20, the internal electrode layers 55 and 65 are electrically connected to each other through the conductive material 80 filled in the via hole formed through the reinforcing layer 10 and the second barista layer 60.
  • the light emitting device 90 may be mounted on one pole of the external electrode layers 70a and 70b.
  • the light emitting device 90 is electrically connected to an external electrode layer having another pole through the wire 1.
  • the non-shrink barista substrate according to the present invention first forms a reinforcement layer formed of a calcined ceramic (S100).
  • the reinforcing layer may be made of at least one of Al 2 O 3 , AlN and MgO.
  • Such a reinforcing layer may be plate-shaped.
  • the reinforcement layer may have at least one via hole on one side.
  • a thin film bonding layer is formed on the surface of the reinforcing layer (S110).
  • the thin film bonding layer is formed on the surface of the reinforcement layer formed of Postfired ceramic.
  • the material of the thin film bonding layer may be at least one of SiO 2 , CuO, TiO 2 and Cr 2 O 3 .
  • the oxide layer may be implemented by preliminary firing after forming the thin film layer, but may not be subjected to prefiring depending on the material.
  • the first barista layer is a barista device that includes an antistatic function.
  • the first barista layer may be formed of a ZnO-based substrate having good thermal conductivity and reflectivity.
  • the first barista layer may have a structure in which a plurality of green sheets are stacked. In this case, the plurality of green sheets may be manufactured by the following method.
  • additives such as Bi 2 O 3 , Sb 2 O 3 , and at least one of Co 3 O 4 , Nd 2 O 3 , and Pr 6 O 11 are added to the desired composition.
  • the raw material powder is prepared by ball milling a ZnO powder having a composition as described above with a solvent such as water or alcohol for 24 hours.
  • a solvent such as water or alcohol
  • PVB-based binder binder
  • toluene / alcohol toluene / alcohol
  • a small ball mill is milled and mixed for about 24 hours to produce a slurry.
  • Such a slurry can be formed into a plurality of green sheets of a desired size by a method such as a doctor blade.
  • Each of the green sheets of the first barista layer may be formed by printing a first internal electrode layer.
  • the first inner electrode layer may not be printed on the remaining green sheets.
  • the first inner electrode layer comprises a first sub inner electrode layer electrically connected to the first pole and a second sub inner electrode layer electrically connected to the second pole having a polarity opposite to the first pole.
  • the first internal electrode layer may be formed of Ag or AgPd.
  • the first internal electrode layer may include at least one via hole at a position corresponding to the position of the via hole of the reinforcement layer.
  • the barista molded body comprising the reinforcing layer, the thin film bonding layer, and the first barista layer is fired (S130).
  • the molded body containing a reinforcing layer, a thin film bonding layer, and a 1st barista layer is called a barista molded body.
  • An electrode layer is formed (S140).
  • An external electrode layer is formed on an upper surface of the first barista layer and is electrically connected to the internal electrode layer through a conductive material filled in a via hole formed through the first barista layer, the thin film bonding layer, and the reinforcement layer. do.
  • another manufacturing method of the non-shrink barista substrate according to the present invention forms a reinforcing layer (S200), to form a thin film bonding layer on the surface of the reinforcing layer (S210), the upper portion of the thin film bonding layer Forming a first bonding layer (S220) is added.
  • the first bonding layer is formed to further strengthen the bonding force between the thin film bonding layer and the first barista layer.
  • the step of firing the barista molded body (S230) is fired including the first bonding layer
  • the step of forming the external electrode layer (S240) the external electrode layer is formed on the upper surface of the first barista layer
  • the first electrode is electrically connected to the internal electrode layer through a conductive material filled in the via hole formed through the first barista layer, the thin film bonding layer, and the reinforcement layer.
  • FIG. 6 another method of manufacturing a non-shrink barista substrate according to the present invention to form a reinforcing layer (S300), to form a thin film bonding layer on the surface of the reinforcing layer (S310), the top of the thin film bonding layer
  • a first barista layer is formed at (S320), and a second barista layer is formed at the bottom of the thin film bonding layer (S330).
  • the second barista layer is formed with a plurality of internal electrode layers under the thin film bonding layer, the same as the first barista layer.
  • the second barista layer is a barista device that includes an antistatic function.
  • the second barista layer may be formed of a ZnO-based substrate having good thermal conductivity and reflectivity.
  • the second barista layer 40 may have a structure in which a plurality of green sheets are stacked.
  • the plurality of green sheets may be manufactured by the following method.
  • additives such as Bi 2 O 3 , Sb 2 O 3 , and at least one of Co 3 O 4 , Nd 2 O 3 , and Pr 6 O 11 are added to the desired composition.
  • the raw material powder is prepared by ball milling a ZnO powder having a composition as described above with a solvent such as water or alcohol for 24 hours.
  • PVB-based binder (binder) is measured as an additive to the raw material powder, about 6 wt%, and then dissolved in toluene / alcohol (toluene / alcohol) -based solvent.
  • the slurry is then milled and mixed for about 24 hours in a small ball mill.
  • Such a slurry can be formed into a plurality of green sheets of a desired size by a method such as a doctor blade.
  • Each of the green sheets of the second barista layer may be formed by printing a second internal electrode layer.
  • the second inner electrode layer may not be printed on the remaining green sheets.
  • the second inner electrode layer comprises a first sub inner electrode layer electrically connected to the first pole and a second sub inner electrode layer electrically connected to the second pole having a polarity opposite to the first pole.
  • the first internal electrode layer may be formed of Ag or AgPd.
  • the first internal electrode layer may include at least one via hole at a position corresponding to the position of the via hole of the reinforcement layer.
  • the step of firing the barista molded body (S340) includes a second barista layer is fired, and then, in the step of forming the external electrode layer (S350), the outer electrode layer, the top surface of the first barista layer and The internal electrode layer is formed on a lower surface of the second barista layer and through a conductive material filled in a via hole formed through the first barista layer, the thin film bonding layer, the reinforcement layer, and the second barista layer. Electrically connected.
  • a first bonding layer is formed on the thin film bonding layer before the first barista layer is formed, and a second bonding layer is formed below the thin film bonding layer before the second barista layer is formed. It may also comprise the step of forming a further.
  • non-shrink barista substrate and the method of manufacturing the same according to the present invention are not limited to the configuration and method of the embodiments described above, but the embodiments may be modified in various ways. All or some of the embodiments may be optionally combined.

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  • Microelectronics & Electronic Packaging (AREA)
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  • General Physics & Mathematics (AREA)
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Abstract

La présente invention concerne un substrat de varistor indéformable, comprenant : une couche de renfort qui est formée en utilisant une céramique ; une couche de jonction à film mince qui est formée sur la surface de la couche de renfort ; une première couche de varistor qui est formée sur la partie supérieure de la couche de jonction à film mince et qui comporte une pluralité de couches d'électrode interne sur sa partie intérieure ; et une couche d'électrode externe qui est formée sur la surface supérieure de la première couche de varistor et qui est électriquement connectée aux couches d'électrode interne via une substance électroconductrice qui remplit un trou d'interconnexion verticale formé en passant à travers la première couche de varistor, la couche de jonction à film mince, et la couche de renfort. La présente invention concerne en outre un procédé de production du substrat de varistor indéformable, l'objectif étant de renforcer la force de liaison et d'augmenter la fiabilité de jonction dans la création d'hétérojonction entre la couche de renfort et la couche de varistor.
PCT/KR2013/007731 2012-08-28 2013-08-28 Substrat de varistor indéformable et procédé de production associé WO2014035143A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/424,955 US9391053B2 (en) 2012-08-28 2013-08-28 Non-shrink varistor substrate and production method for same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2012-0094078 2012-08-28
KR20120094078 2012-08-28
KR20130039268A KR101483259B1 (ko) 2012-08-28 2013-04-10 무수축 바리스타 기판 및 그 제조 방법
KR10-2013-0039268 2013-04-10

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WO2014035143A1 true WO2014035143A1 (fr) 2014-03-06

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Citations (5)

* Cited by examiner, † Cited by third party
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JP2005294673A (ja) * 2004-04-02 2005-10-20 Matsushita Electric Ind Co Ltd 静電気対策部品
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