WO2014034785A1 - 発光素子および発光素子の製造方法 - Google Patents

発光素子および発光素子の製造方法 Download PDF

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Publication number
WO2014034785A1
WO2014034785A1 PCT/JP2013/073163 JP2013073163W WO2014034785A1 WO 2014034785 A1 WO2014034785 A1 WO 2014034785A1 JP 2013073163 W JP2013073163 W JP 2013073163W WO 2014034785 A1 WO2014034785 A1 WO 2014034785A1
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Prior art keywords
light
phosphor
emitting element
light emitting
led element
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PCT/JP2013/073163
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English (en)
French (fr)
Japanese (ja)
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学道 重光
宏之 花戸
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シャープ株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Definitions

  • the present invention relates to a light emitting element and a method for manufacturing the light emitting element. More specifically, the present invention relates to an issuing element capable of emitting white light adjusted to a desired chromaticity with high light extraction efficiency and a manufacturing method thereof.
  • White light emitting devices using semiconductor light emitting devices are expected to be applied to the next generation of general lighting and bulbs such as liquid crystal backlights, and tube markets such as fluorescent tubes and cold cathode tubes.
  • a white light emitting element is obtained by coating a light emitting diode chip with a resin containing phosphor, etc., and light from a phosphor excited by light from the light emitting diode chip and light from the light emitting diode chip. To obtain white light.
  • Patent Document 1 discloses a structure that improves the accuracy of chromaticity by using a plurality of LED chips and making the combination of chromaticity of each LED chip a predetermined combination. However, in this structure, when a module is used, chromaticity variation occurs due to variations in the amount of phosphor of each LED chip.
  • Patent Documents 2 to 4 disclose techniques for color matching in a separate process in a modularized state.
  • Patent Document 2 the phosphor layer for chromaticity adjustment containing the second phosphor provided in the outer layer in the light emitting direction than the phosphor-containing resin layer containing the first phosphor.
  • a configuration formed in a dot shape is disclosed, and it is disclosed that the color is finely adjusted by the phosphor layer for chromaticity adjustment.
  • Patent Document 3 discloses a light-emitting element containing a phosphor and having a light scattering portion formed on at least a part of the surface of a sealing resin portion covering a light-emitting diode chip, and the light scattering portion is disposed therein. Thus, it is disclosed that the efficiency of quantum conversion by a phosphor is improved.
  • Patent Document 4 has an LED element and a sealing material containing a phosphor in a transparent resin, and the sealing material is disposed in the periphery of the LED element, and the surface of the sealing material An LED light source having a transparent thin film with a refractive index different from the refractive index of the encapsulant is disclosed.
  • Patent Document 2 since the technique disclosed in Patent Document 2 requires a process of forming the chromaticity adjusting phosphor layer in a dot shape, it is difficult to accurately configure the chromaticity adjusting phosphor layer. Therefore, there is a problem that it is difficult to finely adjust the color in practice.
  • Patent Documents 3 and 4 can be used to easily and accurately construct the phosphor layer.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a light emitting device capable of sufficiently suppressing the occurrence of multiple scattering and emitting white light having desired chromaticity characteristics with high light extraction efficiency, and It is in providing the manufacturing method.
  • the present inventor has made a simple structure that suppresses the occurrence of multiple scattering and enables a fine adjustment of the chromaticity of emitted light while maintaining the light utilization efficiency. We studied diligently.
  • a light-emitting element includes an LED element, a phosphor that absorbs part of light emitted from the LED element, emits light after wavelength conversion, and at least a part of the phosphor.
  • a resin part that seals the LED element, and the resin part of the outermost layer of the resin part is provided with a reflective film having a wavelength dependency on the reflectance, and the concentration of the phosphor is The density in the area near the LED element is higher than the density in the area near the reflective film.
  • the manufacturing method of the light emitting device includes a phosphor that absorbs a part of light emitted from the LED device and covers the LED device mounted on the mounting surface of the substrate, and converts the wavelength to emit light.
  • the first resin part to be contained is formed on the mounting surface of the substrate, the first step of sealing the LED element, and the phosphor is contained so as to cover at least a part of the first resin part
  • the occurrence of multiple scattering can be sufficiently suppressed, and a light-emitting element having desired chromaticity characteristics can be obtained efficiently and at low cost.
  • variation in chromaticity of the light-emitting element can be suppressed, and the quality of the light-emitting element can be improved.
  • FIG. 1 is a schematic sectional view of a light emitting device according to a first embodiment of the present invention.
  • FIG. 6 is a chromaticity diagram illustrating variation in chromaticity depending on the presence or absence of a reflective film in the light emitting device according to the present invention. It is a schematic sectional structure figure of the light emitting element concerning the 2nd Embodiment of this invention. It is a schematic sectional structure figure of the light emitting element concerning the 3rd Embodiment of this invention. It is a schematic sectional structure figure of the light emitting element concerning the 4th Embodiment of this invention. It is a schematic diagram which shows the outline of the process of the manufacturing method of the light emitting element concerning this invention. It is a general
  • the light-emitting element includes an LED element, a phosphor that absorbs part of the light emitted from the LED element, converts the wavelength to emit light, and at least a part of the phosphor contains the phosphor element.
  • a resin portion to be sealed, and among the resin portions, the outermost resin portion has a reflective film having a wavelength dependency on the reflectance, and the concentration of the phosphor is in the vicinity of the LED element. The density in the region is higher than the density in the region near the reflective film.
  • FIG. 1 is a schematic sectional view of a light emitting device 100 according to the first embodiment.
  • the light emitting element 100 includes an LED element 1, a phosphor-containing resin layer (first resin portion) 2, a resin layer (second resin portion) 3 not containing phosphor, a reflective film 4, A substrate 5 is provided.
  • the resin portion is laminated in two layers on the outer peripheral portion of the LED device 1.
  • the fluorescent substance containing resin layer (1st resin part) 2 which is one layer inside the said resin part contains the said fluorescent substance, and the fluorescent substance which is the outer one layer among the said resin parts is used.
  • the resin layer (second resin part) 3 that is not contained has a configuration in which the phosphor is not contained.
  • the “outer peripheral part” means that the LED element 1 is outside in the light emission direction as viewed from the LED element 1.
  • the LED element 1 is mounted on the mounting surface 6 of the substrate 5 with a silicone resin paste or the like.
  • the substrate 5 is preferably made of a material having a high reflective effect on the mounting surface, and for example, a ceramic substrate is preferably used.
  • a front surface electrode (not shown) for wire bonding is mounted on the mounting surface 6, and a back surface electrode (not shown) for connecting to an external circuit on the back surface (the surface on which the LED element 1 is not mounted). ), And a through hole (not shown) for conducting the front surface electrode and the back surface electrode is provided inside.
  • the LED element 1 may be any element that can emit blue light (wavelength of 435 nm or more and 480 nm or less).
  • a nitride-based compound semiconductor such as InGaN can be used.
  • the LED element 1 is mounted (die bonding) on the mounting surface 6 of the substrate 5 and is electrically connected to the surface electrode of the substrate 5 by a wire (not shown) made of, for example, gold. As a result, power is supplied to the LED element 1 from the back electrode of the substrate 5.
  • the outer peripheral portion of the LED element 1 is formed with two resin portions.
  • the inner layer is a phosphor-containing resin layer (first resin portion) 2 and the outer layer is a resin layer (first layer) containing no phosphor.
  • Second resin portion) 3 (hereinafter also simply referred to as “resin layer (second resin portion) 3”).
  • the number of the LED elements 1 may be one or plural. In the case of a plurality, a plurality of LED elements 1 may be arranged inside one phosphor-containing resin layer (first resin portion) 2, or one LED element 1 is arranged inside. There are a plurality of phosphor-containing resin layers (first resin portions) 2, and a resin layer (second resin portion) 3 is formed so as to cover each phosphor-containing resin layer (first resin portion) 2, The reflective film 4 may be formed so as to cover each resin layer (second resin portion) 3.
  • the LED elements 1 may be arranged at predetermined positions, for example, at equal intervals so as to satisfy a predetermined light emission amount.
  • the phosphor-containing resin layer (first resin portion) 2 is formed so as to cover the LED element 1 and seals the LED element 1.
  • the phosphor-containing resin layer (first resin portion) 2 is made of a resin containing a phosphor.
  • the resin is preferably a silicone resin in order to satisfy the condition of excellent translucency, and an epoxy resin, an acrylic resin, or the like can also be used.
  • the phosphor absorbs part of the light emitted from the LED element 1 (blue light), converts the wavelength, and emits yellow light.
  • Examples of such phosphors include CaAlSiN 3 : Eu, (Si ⁇ Al) 6 (O ⁇ N) 8 : Eu, BOSE (Ba, O, Sr, Si, Eu), SOSE (Sr, Ba, Si, O, Eu), YAG (Ce activated yttrium aluminum garnet), ⁇ sialon ((Ca), Si, Al, O, N, Eu), ⁇ sialon (Si, Al, O, N, Eu), etc. It can be used suitably.
  • the resin layer (second resin portion) 3 not containing the phosphor is formed so as to cover the phosphor-containing resin layer (first resin portion) 2 and becomes the outermost resin portion.
  • a resin layer (second resin portion) 3 not containing a phosphor seals the phosphor-containing resin layer (first resin portion) 2 and the LED element 1.
  • resin which comprises the resin layer (2nd resin part) 3 since it is excellent in translucency, it is preferable that it is a silicone resin, and an epoxy resin, an acrylic resin, etc. can also be used.
  • the resin layer (second resin part) 3 includes a reflective film 4 having a wavelength dependency on the reflectance. “Having wavelength dependency in reflectance” means that the reflectance of light having a wavelength in a specific range is stronger than the reflectance of light having a wavelength in the other range. For example, if it reflects blue light more strongly than green light or red light, it can be said that the reflective film has a wavelength dependency of “high reflectance of blue light”.
  • the reflective film 4 has (1) the reflectance of visible light having a wavelength of 435 nm or more and 480 nm or less is higher than the reflectance of visible light having a wavelength of 500 nm or more and 700 nm or less, or (2) It is preferable that the reflectance of visible light having a wavelength of 500 nm to 700 nm is higher than the reflectance of visible light having a wavelength of 435 nm to 480 nm.
  • the reflectance of blue light is green light (wavelength 500 nm or more and 560 nm or less), yellow-green light (wavelength 560 nm or more and 580 nm or less), yellow light (wavelength 580 nm or more and 595 nm or less). ), Orange light (wavelength 595 nm or more and 605 nm or less) and red light (wavelength 605 nm or more and 700 nm or less).
  • the reflective film 4 when the reflective film 4 is not formed, the blue light emitted from the LED element and the yellow light from the phosphor that absorbs part of the light emitted from the LED element and converts the wavelength to emit light.
  • the reflective film 4 of (1) may be formed on the surface of the resin layer (second resin portion) 3. .
  • the blue light transmitted through the reflective film 4 and emitted from the light emitting element 100 is reduced, and the wavelength of the blue light is converted by the phosphor.
  • the ratio of yellow light in the emitted light increases, the light emitted from the light emitting element 100 has chromaticity shifted to the yellow side as compared with the emitted light in the case where there is no reflective film 4.
  • the reflective film 4 is (2), contrary to the case (1), the reflectance from the green light to the red light is high, and the light from the green light to the red light has a wavelength by the phosphor. Converted. As a result, since the proportion of blue light in the emitted light increases, the light emitted from the light emitting element 100 has a chromaticity shifted to the blue side as compared with the emitted light in the case where the reflective film 4 is not provided.
  • the reflective film 4 when the reflective film 4 is not formed, the light obtained by mixing the blue light emitted from the LED element and the yellow light from the phosphor is yellower than the prescribed chromaticity as white light.
  • the reflection film 4 of the above (2) is formed on the surface of the resin layer (second resin portion) 3.
  • FIG. 2 is a chromaticity diagram for explaining variation in chromaticity depending on the presence or absence of the reflective film 4 in the light emitting device 100 shown in FIG.
  • the light emitting element 100 is provided with a resin layer (second resin portion) 3 that does not contain a phosphor and a phosphor-containing resin layer (first resin portion) 2 and no reflective film 4 is formed.
  • the resin layer (second resin portion) 3 not containing the phosphor
  • the result of measuring the chromaticity of the emitted light of all the LED elements 1 is It is assumed that it is shown in FIG.
  • the chromaticity can be measured by a conventionally known method using a commonly used chromaticity meter.
  • the light before forming the reflective film 4 is colored due to the dispersion of the phosphor dispersed in the phosphor-containing resin layer (first resin portion) 2.
  • the degree of variation varies widely.
  • the resin layer containing no phosphor (second resin)
  • the reflective film of (1) is formed as the reflective film 4 on the surface of the part 3
  • blue light is reflected more strongly than green light to red light.
  • the reflected blue light returns to the phosphor-containing resin layer (first resin portion) 2, undergoes wavelength conversion by the phosphor, and is emitted toward the reflection film 4. If the emitted light is yellow light, the light passes through the reflective film 4 and is emitted to the outside of the light emitting element 100.
  • the chromaticity of light emitted from the light emitting element 100 to the outside can be adjusted from the blue side to the yellow side (direction in which the chromaticity increases).
  • the reflective film 4 preferably contains ZnO and / or TiO 2 .
  • ZnO and / or TiO 2 is inexpensive, and a reflective film having a blue light reflectance higher than that of green light to red light can be formed by an inexpensive process such as vapor deposition or sputtering.
  • any dielectric material can be used as the material of the reflective film 4.
  • SiO 2 can be suitably used.
  • the material forming the reflective film 4 may be a composition such as a composition of SiO 2 and ZnO and / or TiO 2 .
  • the reflective film 4 by designing the reflective film 4 so that the reflectance of light having a long wavelength is high, for example, a reflective film in which the reflectance of green light to red light is higher than that of blue light can be formed. .
  • the chromaticity of the light emitted to the outside from the light emitting element 100 can be adjusted from the yellow side to the blue side (direction in which the chromaticity decreases).
  • the adjustment of chromaticity in this case is realized not by the wavelength conversion efficiency by the phosphor but by the loss of the long wavelength component.
  • the preferred content of the dielectric material in the reflective film 4 varies depending on the physical properties of the dielectric material contained in the reflective film 4, the amount of wavelength component to be adjusted, the wavelength of light incident on the reflective film 4, etc. I can't say.
  • the wavelength dependence of the reflective film 4 depends on the refractive index of the resin (for example, silicone resin) constituting the phosphor-containing resin layer (first resin part) 2 and the resin layer (second resin part) 3, and the reflective film. 4 and the refractive index of 4.
  • the resin for example, silicone resin
  • TiO 2 reffractive index of about 2.5
  • silicone resin refractive index of about 1.4
  • the material for forming the reflective film 4 may be selected as appropriate according to the type of light whose output is desired to be reduced by measuring the chromaticity of the light emitted from the light emitting element 100 when the reflective film 4 is not formed. Good.
  • the reflective film 4 can be formed by depositing a material containing the dielectric material on the surface of the resin layer (second resin portion) 3 using a method such as vapor deposition or sputtering.
  • the reflective film 4 is preferably a single layer film, but is not limited to this and may be a multilayer film. In the case of a multilayer film, it is possible to perform toning with reduced light loss by designing the reflectance of the visible light region to be low and the reflectance of only a limited wavelength region to be high.
  • the concentration of the phosphor needs to be higher in the region near the LED element than in the region near the reflective film.
  • the “region in the vicinity of the LED element” refers to the inner surface (the reflective film 4) of the reflective film 4 from any point on the outer surface of the LED element 1.
  • a straight line is drawn up to the surface in contact with the resin layer (second resin portion) 3), it is on the straight line and up to any point on the outer surface of the LED element 1.
  • the distance is a region formed by a point shorter than the distance to the inner surface of the reflective film 4.
  • the “region in the vicinity of the reflective film” is on the straight line when a straight line is drawn from any point on the inner surface of the reflective film 4 to any point on the outer surface of the LED element 1.
  • the distance to any point on the inner surface of the reflective film 4 is a region formed by a point shorter than the distance to any point on the outer surface of the LED element 1.
  • the phosphor-containing resin layer (first resin portion) 2 contains a phosphor, and the resin layer (second resin portion) 3 does not contain a phosphor. Further, the phosphor-containing resin layer (first resin portion) 2 is localized in a region in the vicinity of the LED element 1.
  • the concentration of the phosphor in the region near the LED element is higher than the concentration in the region near the reflective film
  • the multiple scattering is suppressed, and the emission efficiency is improved. Decline can be prevented. This will be described below.
  • FIG. 7 is a schematic cross-sectional structure diagram of a conventionally known light emitting device showing a state of phosphor distribution in the conventionally known light emitting device.
  • the phosphor-containing resin layer 2 ' is formed in one layer on the outer peripheral portion of the LED device 1, and contains the phosphor inside.
  • the LED element is a so-called single-sealed seal that is sealed only by the phosphor-containing resin layer 2 ′.
  • the concentration of the phosphor is such that the phosphor-containing resin layer 2 ′ has a concentration as shown in FIG. It is necessary to make it uniformly diffused at a low concentration inside.
  • the amount of the phosphor contained in the phosphor-containing resin layer (first resin portion) 2 shown in FIG. 1 and the amount of the phosphor contained in the phosphor-containing resin layer 2 ′ shown in FIG. In the case of the same degree, the volume of the phosphor-containing resin layer 2 ′ is made larger than the volume of the phosphor-containing resin layer (first resin portion) 2 and the number of wavelength conversions by the phosphor is increased, so that FIG.
  • the light emitting element 200 shown can emit outgoing light having the same chromaticity characteristics as the light emitting element 100 shown in FIG.
  • the wavelength conversion is made equal by adjusting the concentration of the phosphor according to the volume difference from the phosphor-containing resin layer (first resin portion) 2, and the light emitting element
  • the emitted light having the same chromaticity characteristic as 100 can be emitted.
  • the light emitting element 200 has a lower light extraction efficiency than the light emitting element 100. That is, fluorescence is generally scattered by the phosphor even when wavelength conversion (quantum effect) is not performed. At this time, when the phosphor concentration inside the phosphor-containing resin layer 2 ′ is low as in the light-emitting element 200, the light diffuses inside the phosphor-containing resin layer 2 ′ and goes to the outside of the light-emitting element 200. There is a problem in that the ratio of light that becomes a loss due to multiple scattering before being emitted increases, and the light extraction efficiency decreases.
  • FIG. 7 a part of the light a emitted from the LED element 1 is reflected by the reflective film 4 and separated into emitted light c ′ and reflected light b ′.
  • the reflected reflected light b ′ is scattered by the phosphor present in the phosphor-containing resin layer 2 ′, and the phosphor concentration in the phosphor-containing resin layer 2 ′ is low, so that the inside of the phosphor-containing resin layer 2 ′.
  • D 'in FIG. 7 represents light diffused while being scattered by the phosphor. When such diffusion occurs, the light is not easily emitted to the outside of the light emitting element 200.
  • the phosphor content and the concentration of the phosphor are uniformly diffused at a low concentration in the sealing material disclosed in Patent Document 4 as in the light-emitting element 200. It is a light emitting element in a state. That is, the light-emitting element disclosed in Patent Document 4 has a problem that the loss of light due to multiple scattering is large, similar to the light-emitting element 200.
  • the phosphor-containing resin layer (first resin portion) 2 contains a phosphor
  • the resin layer (second resin portion) 3 contains a phosphor. Therefore, the concentration in the region near the LED element 1 is much higher than the concentration in the region near the reflective film 4.
  • a part of the light a emitted from the LED element 1 is reflected by the reflective film 4 and separated into emitted light c and reflected light b.
  • the reflected reflected light b is scattered by the phosphor present in the phosphor-containing resin layer (first resin portion) 2 (wavelength conversion is also performed), but the phosphor-containing resin layer (first resin portion). 2) Since the phosphor concentration inside 2 is high, the inside of the phosphor-containing resin layer (first resin portion) 2 is not diffused.
  • the wavelength-converted light d is quickly emitted outside the light emitting element 100 without being diffused.
  • part of the light is reflected by the reflective film 4 and undergoes further wavelength conversion by the phosphor.
  • the outgoing light c having the wavelength ⁇ and the light d having the wavelength ⁇ ′ are mixed, and white light having a desired chromaticity can be obtained.
  • the phosphor is accumulated in the region in the vicinity of the LED element 1, even if the fluorescence is scattered by the phosphor, the phosphor concentration inside the phosphor-containing resin layer 2 ′ is low. Unlike the light emitting element 200 and the light emitting element disclosed in Patent Document 4, light does not diffuse in the phosphor layer.
  • the concentration of the phosphor in the phosphor-containing resin layer (first resin portion) 2 is preferably as high as possible. This is because the phosphor can be further accumulated in a region in the vicinity of the LED element 1 and light can be prevented from diffusing inside the phosphor-containing resin layer (first resin portion) 2.
  • FIG. 3 is a schematic cross-sectional structure diagram of a light emitting device 101 according to the second embodiment of the present invention.
  • the reflection frame 7 is disposed on the mounting surface 6 of the substrate 5.
  • the reflective frame 7 is for efficiently irradiating the reflective film 4 with light emitted from the LED element 1 or the phosphor, and a material having a high surface reflectance such as resin, ceramic, or metal material is used.
  • a material having a high surface reflectance such as resin, ceramic, or metal material is used.
  • the light beam emitted from the LED element 1 in the lateral direction can be emitted in the direction of the reflective film 4 by being reflected by the reflection frame 7.
  • the reflection frame 7 may be formed on the mounting surface 6 as a separate body from the substrate 5 or may be integrally formed with the substrate 5.
  • the light emitting element 101 two resin layers are laminated on the outer peripheral part of the LED element 1, and a phosphor-containing resin layer (first resin part) containing phosphor on the inner side, that is, on the side close to the LED element 1. 2 is formed, and a resin layer (second resin portion) 3 not containing a phosphor is formed outside the phosphor-containing resin layer (first resin portion) 2.
  • a reflective film 4 having a wavelength dependency on the reflectance is formed across the surface of the resin layer (second resin portion) 3 not containing the phosphor and the reflective frame 7.
  • a part of the light a emitted from the LED element 1 is reflected by the reflective film 4 and separated into reflected light b and outgoing light c.
  • the reflected light b is wavelength-converted by the phosphor in the phosphor-containing resin layer (first resin portion) 2 and is emitted from the light emitting element 101 as the emitted light d.
  • the light a is partly wavelength-converted by a phosphor after being emitted, and is emitted from the light emitting element 101 as emitted light d ′.
  • the phosphor-containing resin layer (first resin portion) 2, the resin layer not containing phosphor (second resin portion) 3, and the shape of the reflective film 4 are the same as those in the first embodiment.
  • the reflection film 4 has wavelength dependency in reflectance as described above. Therefore, the reflection film has appropriate wavelength dependency according to chromaticity characteristics when the reflection film 4 is not provided.
  • the light in which the outgoing lights c, d, and d ′ are mixed can be turned into white light having desired chromaticity characteristics.
  • the concentration of the phosphor is higher in the region near the LED element than the concentration in the region near the reflective film, the problem of light loss due to multiple scattering does not occur. Furthermore, since the light emitting element 101 includes the reflective frame 7, white light having a desired chromaticity can be emitted more efficiently.
  • the issue elements 100 and 101 including the phosphor-containing resin layer (first resin portion) 2 and the resin layer (second resin portion) 3 not containing phosphor have been described.
  • the resin portion is formed in one layer on the outer peripheral portion of the LED element and contains the phosphor, and the concentration of the phosphor in the resin portion is determined by the substrate.
  • FIG. 4 is a schematic sectional view of a light emitting device 102 according to the third embodiment of the present invention.
  • the LED element 1 is mounted on the mounting surface 6 of the substrate 5, a phosphor-containing resin layer (resin part) that includes a reflective film 4 on the outer periphery of the LED element 1 and contains phosphor inside. ) 2 is formed, and the LED element 1 is sealed by the phosphor-containing resin layer (resin portion) 2. Since the light emitting device according to the present embodiment does not include the resin layer (second resin portion) 3 that does not contain the phosphor, but includes the phosphor-containing resin layer (resin portion) 2, the phosphor-containing resin layer. (Resin part) 2 becomes the resin part of the outermost layer.
  • the concentration of the phosphor is a concentration gradient inside the phosphor-containing resin layer (resin portion) 2 as schematically represented by the shading inside the phosphor-containing resin layer (resin portion) 2. Is forming. That is, in the phosphor-containing resin layer (resin portion) 2, the phosphor concentration is higher in the region where the distance to the mounting surface 6 of the substrate 5 is shorter, and as the distance to the mounting surface 6 becomes longer (the reflective film 4). The phosphor concentration is low (as it approaches).
  • the concentration of the phosphor is higher in the region near the LED element than the concentration in the region near the reflective film.
  • the concentration of the phosphor is higher in a region where the distance to the mounting surface 6 of the substrate 5 is shorter, and the concentration of the phosphor is lower as the distance to the mounting surface 6 is longer. It means being.
  • the “distance to the mounting surface 6” refers to the case where a perpendicular line is dropped on the mounting surface 6 from a certain point inside the phosphor-containing resin layer (resin portion) 2. Says the length of the perpendicular.
  • the LED element 1 is not double-sealed by the two-layer resin part as in the light-emitting element 100, but is single-sealed by one phosphor-containing resin layer (resin part) 2. .
  • the light emitting element 102 is the same as the light emitting element 200 shown in FIG. 7 in that the LED element 1 is single-sealed.
  • the phosphor concentration is uniformly diffused at a low concentration inside the phosphor-containing resin layer 2 'as shown in FIG.
  • the light emitting element 102 As shown in FIG. 4, a part of the light a emitted from the LED element 1 is reflected by the reflective film 4 and separated into the emitted light c and the reflected light b. Further, the light a is partly wavelength-converted by a phosphor after being emitted, and is emitted from the light emitting element 102 as emitted light d ′.
  • the reflected reflected light b is scattered by the phosphor present in the phosphor-containing resin layer (resin portion) 2 (wavelength conversion is also performed), but the phosphor-containing resin layer (resin portion).
  • the phosphor concentration is higher. In other words, the region where the phosphor is closer to the mounting surface 6 is more settled. Therefore, the light emitting element 102 has a structure equivalent to the light emitting element 100 in which the LED element 1 is sealed with the phosphor-containing resin layer (first resin portion) 2 and the resin layer (second resin portion) 3. Will be able to. Therefore, the wavelength-converted light d does not diffuse inside the phosphor-containing resin layer (resin portion) 2.
  • the wavelength-converted light d is quickly emitted to the outside of the light emitting element 102 without diffusing inside the phosphor-containing resin layer (resin portion) 2.
  • part of the light is reflected by the reflective film 4 and undergoes further wavelength conversion by the phosphor.
  • the reflection film 4 Since the reflection film 4 has wavelength dependency on the reflectance as described above, the reflection film 4 having an appropriate wavelength dependency is selected according to the chromaticity characteristics when the reflection film 4 is not provided. Thus, the outgoing light c, the outgoing light d, and the outgoing light d ′ are mixed, and white light having a desired chromaticity characteristic can be obtained.
  • the phosphor concentration in the region where the distance to the mounting surface 6 is short in the phosphor-containing resin layer (resin portion) 2 is high. Even if the fluorescence is scattered by the phosphor. The light does not diffuse in the phosphor layer unlike the light emitting device 200 having a low phosphor concentration inside the phosphor-containing resin layer 2 ′ and the light emitting device disclosed in Patent Document 4. Therefore, there is an advantage that light having a desired chromaticity can be emitted to the outside of the light emitting element 102 with high light extraction efficiency while suppressing multiple scattering.
  • the phosphor concentration in the phosphor-containing resin layer (resin portion) 2 forms a concentration gradient, and the gradient is the distance to the mounting surface 6. If the gradient is such that the phosphor concentration in the short region is high and the phosphor concentration is low in the region where the distance to the mounting surface 6 is long, the LED element 1 is double-sealed like the light emitting device 100. Similarly to the case where the light is emitted, light having a desired chromaticity can be emitted to the outside of the light emitting element 102 with high light extraction efficiency.
  • ⁇ Fourth Embodiment> (Other forms of light-emitting elements in which the phosphor concentration forms a concentration gradient)
  • the phosphor-containing resin layer (resin portion) 2 and the reflective film 4 are formed in a hemispherical shape on the mounting surface 6 of the substrate 5.
  • the form of the light emitting element is not limited to this.
  • a light-emitting element that takes a form different from that of the third embodiment will be described.
  • FIG. 5 is a schematic sectional view of a light emitting device 103 according to the fourth embodiment of the present invention.
  • the LED element 1 is mounted on the mounting surface 6 of the substrate 5, and a phosphor-containing resin layer (resin part) 2 containing phosphor inside is formed on the outer periphery of the LED element 1.
  • the LED element 1 is sealed by the containing resin layer (resin portion) 2.
  • the reflection frame 7 is disposed on the mounting surface 6 of the substrate 5, and the reflectance is straddled across the surface of the phosphor-containing resin layer (resin portion) 2 and the reflection frame 7.
  • a reflective film 4 having wavelength dependency is formed.
  • the concentration of the phosphor is a concentration gradient inside the phosphor-containing resin layer (resin portion) 2 as schematically represented by the density inside the phosphor-containing resin layer (resin portion) 2. Is forming. That is, the concentration of the phosphor is higher in the region where the distance to the mounting surface 6 of the substrate 5 is shorter, and the concentration of the phosphor is lower as the distance to the mounting surface 6 becomes longer (as the distance from the reflecting film 4 gets closer).
  • the LED element 1 is not double-sealed by the two-layer resin portion like the light-emitting element 101, but is single-sealed by one phosphor-containing resin layer (resin portion) 2. .
  • the light emitting element 103 is the same as the light emitting element 200 shown in FIG. 7 in that the LED element 1 is single-sealed.
  • a part of the light a emitted from the LED element 1 is reflected by the reflective film 4 and separated into the emitted light c and the reflected light b.
  • the light a is partly wavelength-converted by a phosphor after being emitted, and is emitted from the light emitting element 103 as emitted light d ′.
  • the phosphor concentration is uniformly diffused at a low concentration inside the phosphor-containing resin layer 2 ′, as shown in FIG. It is in a state.
  • the reflected reflected light b is scattered by the phosphor existing in the phosphor-containing resin layer (resin portion) 2 (wavelength conversion is also performed), but the mounting inside the phosphor-containing resin layer (resin portion) 2 is performed. Since the phosphor concentration in the region where the distance to the surface 6 is short is high, that is, since the phosphor is more precipitated in the region closer to the mounting surface 6, the phosphor-containing resin layer (resin portion) 2. Does not spread inside.
  • the wavelength-converted light d is quickly emitted outside the light emitting element 103 without diffusing inside the phosphor-containing resin layer (resin portion) 2.
  • part of the light is reflected by the reflective film 4 and undergoes further wavelength conversion by the phosphor.
  • the reflection film 4 Since the reflection film 4 has wavelength dependency on the reflectance as described above, the reflection film 4 having an appropriate wavelength dependency is selected according to the chromaticity characteristics when the reflection film 4 is not provided. Thus, the outgoing light c, the outgoing light d, and the outgoing light d ′ are mixed, and white light having a desired chromaticity characteristic can be obtained.
  • the light-emitting element 103 is different from the light-emitting element 102 according to the third embodiment in the shapes of the phosphor-containing resin layer (first resin portion) 2 and the reflective film 4, but the phosphor-containing resin layer (resin portion) 2
  • the phosphor concentration in the inside forms a concentration gradient, and the gradient has a high phosphor concentration in a region where the distance to the mounting surface 6 is short, and the phosphor concentration decreases in a region where the distance to the mounting surface 6 is long. It is a gradient.
  • the “distance to the mounting surface 6” refers to the case where a perpendicular line is dropped on the mounting surface 6 from a certain point inside the phosphor-containing resin layer (resin portion) 2.
  • the length of the perpendicular line when a perpendicular is made to the mounting surface 6 from a certain point inside the phosphor-containing resin layer (resin portion) 2, when it hits the reflection frame 7, the reflection surface 7 penetrates the mounting surface 6 to the reflection frame 7. It means the length of the perpendicular when the perpendicular is lowered with respect to the surface extended in the direction.
  • the method for manufacturing a light-emitting element according to the present invention absorbs a part of light emitted from the LED element on the mounting surface of the substrate so as to cover the LED element mounted on the mounting surface of the substrate, and converts the wavelength.
  • the light emitting device 100 according to the first embodiment and the light emitting device 101 according to the second embodiment can be manufactured by the method.
  • FIG. 6 is a schematic diagram showing an outline of the steps of the method for manufacturing a light emitting device according to the present invention.
  • 6A shows a method for manufacturing the light emitting device 100 according to the first embodiment
  • FIG. 6B shows a method for manufacturing the light emitting device 101 according to the second embodiment.
  • the LED element 1 is mounted on the mounting surface 6 of the substrate 5, and (a), (2) and (b) of FIG. As shown in (2), wire bonding is performed using the wire 8 and a conventionally known wire bonding machine 9.
  • the phosphor-containing resin layer (first resin portion) 2 is placed on the mounting surface 6 so as to cover the LED element 1. It apply
  • the resin layer (not shown) which does not contain fluorescent substance using a dispenser (not shown) so that the fluorescent substance containing resin layer (1st resin part) 2 may be covered.
  • the second resin part) 3 is formed, and the resin layer (second resin part) 3 is covered and molded by the mold 11.
  • the resin layer (second resin portion) 3 is formed on the surface of the phosphor-containing resin layer (first resin portion) 2 using the dispenser 10. That is, in (a), (4) and (b), (4) of FIG. 6, the resin layer (second resin part) is covered so as to cover at least part of the phosphor-containing resin layer (first resin part) 2. ) 3 is formed.
  • “covering at least a part of the first resin portion” means that the phosphor layer is contained by the resin layer (second resin portion) 3 as shown in FIGS. Including covering the entire surface of the resin layer (first resin portion) 2, as shown in FIGS. 6B and 6, the phosphor-containing resin layer (second resin portion) 3 It also includes covering a part of the surface of the first resin portion) 2.
  • the chromaticity characteristics of light emitted from the LED element 1 through the phosphor-containing resin layer (first resin portion) 2 and the resin layer (second resin portion) 3 are measured. Then, based on the measurement result, the reflective film 4 having the wavelength dependency necessary for obtaining the desired measurement result is selected, and the reflective film 4 is placed on the surface of the resin layer (second resin portion) 3. For example, it is formed by forming a film using a method such as vapor deposition or sputtering.
  • the phosphor-containing resin layer (first resin portion) 2 and the resin layer (second resin portion) 3 are used.
  • the light emitting element 100 or 101 can be manufactured by being cured by irradiating with UV.
  • phosphor-containing resin After the LED element 1 is sealed with the layer (first resin portion) 2, the phosphor contained in the phosphor-containing resin layer (first resin portion) 2 is allowed to settle. Thereafter, the phosphor-containing resin layer (first resin portion) 2 can be produced by molding the mold 11 as necessary, and forming the reflective film 4 and curing the resin.
  • a light-emitting element includes an LED element, a phosphor that absorbs part of light emitted from the LED element, converts the wavelength to emit light, and at least a part of the phosphor contains the phosphor.
  • a resin portion that seals the LED element, and the resin portion of the outermost layer among the resin portions includes a reflective film having a wavelength dependency on the reflectance, and the concentration of the phosphor is determined by the LED. The density in the area near the element is higher than the density in the area near the reflection film.
  • the reflective film Part of the light emitted from the LED element is reflected by the reflective film and undergoes a wavelength conversion process by the phosphor, but the reflective film has a wavelength dependency on the reflectance. It is possible to easily control the reflectivity so as to reduce the reflectivity.
  • the reflection film since the reflection film is provided, light having a desired chromaticity characteristic can be obtained by increasing the number of wavelength conversions by the phosphor even when the amount of the phosphor is reduced. Therefore, since the usage-amount of the said fluorescent substance can be reduced, material cost can be reduced.
  • the concentration of the phosphor is higher in the region near the LED element than in the region near the reflective film. That is, the concentration of the phosphor in the resin portion is not uniform.
  • the concentration of the phosphor inside the resin portion is uniform throughout, the light emitted from the LED element reflected by the reflective film is converted into fluorescence by the phosphor, and then light is emitted. There is a case where the LED element side is traveled instead of the direction. That is, the loss of light due to multiple scattering increases.
  • the phosphor concentration in the region in the vicinity of the LED element is higher than the phosphor concentration in the region in the vicinity of the reflective film, the occurrence of multiple scattering can be sufficiently suppressed.
  • the light-emitting element according to the present invention can obtain a light-emitting element having desired chromaticity characteristics efficiently and at low cost.
  • the resin part is laminated in two layers on the outer peripheral part of the LED element, the first resin part containing the phosphor is formed on the inside, and the first It is preferable that the 2nd resin part which does not contain the said fluorescent substance is formed in the outer side of this resin part.
  • the said LED element is sealed twice by the resin part of two layers, and the said fluorescent substance is contained only in the inside 1st resin part which has sealed the said LED element directly. Yes. That is, the phosphor is unevenly distributed in the vicinity of the LED element. Therefore, the occurrence of multiple scattering can be effectively suppressed and high light utilization efficiency can be maintained.
  • the reflective film has a wavelength dependency in reflectance, the light-emitting element can obtain desired chromaticity characteristics.
  • the resin portion is formed in a single layer on the outer peripheral portion of the LED element and contains the phosphor, and the concentration of the phosphor in the resin portion is The region where the distance to the mounting surface of the substrate is shorter may be higher.
  • the LED element is sealed with a single resin part, but the phosphor is present at the highest concentration in the vicinity of the LED element, forming a concentration gradient. Therefore, also in this case, the occurrence of multiple scattering can be effectively suppressed, and high light utilization efficiency can be maintained.
  • the reflective film has a wavelength dependency in reflectance, the light-emitting element can obtain desired chromaticity characteristics.
  • the reflective film preferably has a higher reflectance of visible light having a wavelength of 435 nm to 480 nm than that of visible light having a wavelength of 500 nm to 700 nm. .
  • the chromaticity of the light emitted from the light emitting element can be reduced with no reflection film while suppressing light loss. Can be easily shifted to the yellow side.
  • the reflective film preferably contains ZnO and / or TiO 2 .
  • the reflective film preferably has a higher reflectance of visible light having a wavelength of 500 nm to 700 nm than that of visible light having a wavelength of 435 nm to 480 nm. .
  • the green to red light can be reflected more strongly than the blue light, the chromaticity of the light emitted from the light emitting element is suppressed by the reflection film while suppressing the light loss. Compared to the case, it can be easily shifted to the blue side.
  • the reflective film is preferably a single layer film.
  • the manufacturing method of the light emitting element concerning this invention contains the fluorescent substance which absorbs a part of light emission from the said LED element so that the LED element mounted in the mounting surface of a board
  • a second step of forming a second resin portion a third step of measuring chromaticity characteristics of light emitted from the LED element through the first resin portion and the second resin portion, And a fourth step of forming a reflection film having a wavelength dependency on the reflectance on the surface of the second resin portion in accordance with the measured chromaticity characteristics.
  • the phosphor can be unevenly distributed in a region in the vicinity of the LED element, the occurrence of multiple scattering can be suppressed, and a light emitting element with little light loss can be obtained.
  • a reflection film having a wavelength dependency on the reflectance is formed on the surface of the second resin portion according to the measured chromaticity characteristics, so that variation in chromaticity of the light emitting element is effectively suppressed.
  • a light emitting element with uniform chromaticity characteristics can be manufactured.
  • the present invention can be suitably used in the field related to a light-emitting element in which a light-emitting element and a phosphor are combined. Further, it can be widely used in the fields of various electric devices such as a mobile phone including a light emitting element.

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PCT/JP2013/073163 2012-08-29 2013-08-29 発光素子および発光素子の製造方法 WO2014034785A1 (ja)

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JP2008004645A (ja) * 2006-06-20 2008-01-10 Harison Toshiba Lighting Corp 発光デバイス
JP2010016029A (ja) * 2008-07-01 2010-01-21 Citizen Holdings Co Ltd Ｌｅｄ光源
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JP2010186968A (ja) * 2009-02-13 2010-08-26 Sharp Corp 発光装置および発光装置の製造方法
WO2011108449A1 (ja) * 2010-03-03 2011-09-09 シャープ株式会社 波長変換部材、発光装置および画像表示装置ならびに波長変換部材の製造方法
JP2011198800A (ja) * 2010-03-17 2011-10-06 Mitsubishi Chemicals Corp 半導体発光素子
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JP2005332963A (ja) * 2004-05-19 2005-12-02 Shoei Chem Ind Co 発光装置
JP2008004645A (ja) * 2006-06-20 2008-01-10 Harison Toshiba Lighting Corp 発光デバイス
JP2010016029A (ja) * 2008-07-01 2010-01-21 Citizen Holdings Co Ltd Ｌｅｄ光源
JP2010087324A (ja) * 2008-10-01 2010-04-15 Minebea Co Ltd 発光装置
JP2010186968A (ja) * 2009-02-13 2010-08-26 Sharp Corp 発光装置および発光装置の製造方法
WO2011108449A1 (ja) * 2010-03-03 2011-09-09 シャープ株式会社 波長変換部材、発光装置および画像表示装置ならびに波長変換部材の製造方法
JP2011198800A (ja) * 2010-03-17 2011-10-06 Mitsubishi Chemicals Corp 半導体発光素子
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Publication number Priority date Publication date Assignee Title
JP2018056458A (ja) * 2016-09-30 2018-04-05 日亜化学工業株式会社 発光装置およびその製造方法

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