WO2014023039A1 - 有机显示装置及其制作方法 - Google Patents

有机显示装置及其制作方法 Download PDF

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Publication number
WO2014023039A1
WO2014023039A1 PCT/CN2012/080240 CN2012080240W WO2014023039A1 WO 2014023039 A1 WO2014023039 A1 WO 2014023039A1 CN 2012080240 W CN2012080240 W CN 2012080240W WO 2014023039 A1 WO2014023039 A1 WO 2014023039A1
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Prior art keywords
layer
transparent conductive
conductive oxide
display device
organic
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English (en)
French (fr)
Inventor
黄泰钧
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US13/639,213 priority Critical patent/US8841657B2/en
Publication of WO2014023039A1 publication Critical patent/WO2014023039A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an organic light emitting diode display and a method of fabricating the same.
  • the organic light emitting diode emits light by sandwiching an organic light emitting material between a transparent anode and a metal reflective cathode to apply a voltage to the organic light emitting material. Since the organic electro-laser display does not require a liquid crystal and a conventional backlight module, it can be manufactured to be lighter and thinner. Compared with other types of flat panel display devices, the OLED consumes less power, and the OLED can operate over a wide temperature range and is manufactured. The cost is lower, so it is getting more and more widely used.
  • FIG. 1 is a cross-sectional structural view of a display device in the prior art
  • FIG. 2 is a schematic top plan view of the display device.
  • the width L1 of the power line is generally large, the space of the display area 19 will be occupied, so that the transmittance of the organic display device is low, which affects the display quality.
  • An object of the present invention is to provide an organic display device to solve the problem in the prior art that the width of the power line is wide, the transmittance of the organic display device is reduced, and the voltage drop occurs during the transmission of the current, resulting in organic
  • the technical problem of the brightness of the light-emitting diodes is different.
  • Still another object of the present invention is to provide a method for fabricating an organic display device, which solves the problem in the prior art that the transmittance of the organic display device is reduced due to the wide width of the power supply line, and the voltage drop occurs during the transmission current.
  • the invention constructs an organic display device, which comprises a scan line, a data line and a power line, wherein the area defined by the intersection of the scan line, the data line and the power line is provided with a display area and an element area;
  • the display area is provided with an organic light emitting diode, and the organic light emitting diode comprises an anode layer; the power line is formed with a conductive layer; wherein the anode layer of the organic light emitting diode and the conductive layer are etched on the same material layer Formed, and the material layer comprises a superposed at least one electrically conductive metal layer, and at least one light transmissive transparent conductive oxide layer.
  • the material layer includes a first transparent conductive oxide layer, a metal layer and a second transparent conductive oxide layer which are sequentially stacked;
  • the conductive layer comprises a first transparent conductive oxide layer, a metal layer and a second transparent conductive oxide layer; and the anode layer is formed by a first transparent conductive oxide layer.
  • the material of the transparent conductive oxide layer is indium tin oxide, and the material of the metal layer is copper.
  • Another object of the present invention is to provide an organic display device to solve the problem in the prior art that the width of the power supply line is wide, the transmittance of the organic display device is reduced, and the voltage drop occurs during the transmission of the current.
  • the technical problem of the brightness of organic light-emitting diodes is different.
  • the present invention constructs an organic display device including a scan line, a data line, and a power line, and a region defined by the intersection of the scan line, the data line, and the power line is provided with a display area;
  • the display area is provided with an organic light emitting diode, and the organic light emitting diode comprises an anode layer; the power line is formed with a conductive layer; wherein the anode layer of the organic light emitting diode and the conductive layer are etched on the same material layer form.
  • the material layer comprises a superposed at least one electrically conductive metal layer, and at least one light transmissive transparent conductive oxide layer;
  • the conductive layer includes at least one metal layer, and the anode layer is formed of a layer of transparent conductive oxide.
  • the material layer comprises a first transparent conductive oxide layer, a metal layer and a second transparent conductive oxide layer which are sequentially stacked;
  • the conductive layer comprises a first transparent conductive oxide layer, a metal layer and a second transparent conductive oxide layer; and the anode layer is formed by a first transparent conductive oxide layer.
  • the material of the transparent conductive oxide layer is indium tin oxide, and the material of the metal layer is copper.
  • Still another object of the present invention is to provide a method for fabricating an organic display device, which solves the problem in the prior art that the transmittance of the organic display device is reduced due to the wide width of the power supply line, and the voltage drop occurs during the transmission current.
  • the present invention constructs a method of fabricating an organic display device, the method comprising the following steps:
  • the material layer comprises a superposed at least one electrically conductive metal layer, and at least one light transmissive transparent conductive oxide layer; the conductive layer comprises at least one metal layer, and The anode layer is formed from a layer of transparent conductive oxide.
  • the material of the transparent conductive oxide layer is indium tin oxide, and the material of the metal layer is copper.
  • a switching element is further formed in the element region, and the switching element is respectively connected to the scan line, the data line, the power line, and the organic light emitting diode to control The switch of the organic light emitting diode.
  • the present invention applies a material layer on the entire transparent substrate, and then performs a mask etching process on the material layer to make a material corresponding to the power line.
  • the layer forms a conductive layer to achieve electrical conduction; and the corresponding material layer of the display region forms an anode layer. Since the conductive layer can conduct electricity, the conductive layer can share the conductive function of the power line, thereby reducing the volume of the power line, for example, reducing the width of the power line, thereby increasing the aperture ratio of the organic display device. In turn, the voltage drop problem can be avoided, so that the organic light-emitting diodes emit light uniformly.
  • FIG. 2 is a schematic top plan view of an organic display device in the prior art
  • FIG. 3 is a cross-sectional structural view showing a preferred embodiment of an organic display device of the present invention.
  • FIG. 4 is a top plan view showing a preferred embodiment of an organic display device according to the present invention.
  • 5A-5C are schematic views showing the etching of a material layer to form a conductive layer and an anode layer in the present invention
  • FIG. 6 is a schematic flow chart of a preferred embodiment of a method of fabricating an organic display device according to the present invention.
  • the organic display device includes a scan line 201, a data line 202, and a power line 203, the scan line 201, the data line 202, and a power line.
  • 203 can be formed in the same layer and formed in the same process.
  • the area defined by the intersection of the scan line 201, the data line 202, and the power line 203 includes an element area 20 and a display area 30.
  • FIG. 3 is a cross-sectional structural view corresponding to the element region 20 and the display region 30 of FIG. 4.
  • the element region 20 is provided with a switching element 21, such as a thin film field effect transistor (Thin Film) Transistor (TFT)
  • a conductive layer 22 is formed on the power line 203.
  • the conductive layer 22 is formed on the switching element 21, the scan line 201, and the data line 202.
  • the conductive layer 22 includes a first transparent conductive oxide layer 221, a metal layer 222, and a second transparent conductive oxide layer 223 in this order.
  • the display area 30 is provided with an organic light emitting diode composed of a transparent substrate 31 , an anode layer 32 , a hole transport layer 33 , an organic light emitting layer 34 , an electron transport layer 35 , and Cathode layer 36.
  • an organic light emitting diode composed of a transparent substrate 31 , an anode layer 32 , a hole transport layer 33 , an organic light emitting layer 34 , an electron transport layer 35 , and Cathode layer 36.
  • electrons from the cathode layer 36 and holes from the anode layer 32 recombine at the organic light-emitting layer 34, causing the organic light-emitting layer 34 to emit a light source, and the light source emitted from the organic light-emitting layer 34 sequentially passes through the hole transport layer 33.
  • the anode layer 32 and the transparent substrate 31 are emitted.
  • the switching element 21, the scanning line 201, the data line 202, and the power supply line 203 are formed between the transparent substrate 31 and the conductive layer 22, and may be formed by the same process.
  • the conductive layer 22 and the anode layer 32 of the organic light emitting diode are formed on the basis of the same material layer.
  • the first transparent conductive oxide layer 221, the second transparent conductive oxide layer 223 of the conductive layer 22, and the anode layer 32 of the organic light emitting diode are all formed of the same material, such as indium tin oxide, to make the light transparent.
  • the metal layer 222 of the conductive layer 22 is formed of an electrically conductive material, such as metallic copper.
  • FIGS. 5A-5C are schematic views showing the process of forming the conductive layer 22 and the anode layer 32 of the organic light emitting diode on the same material layer.
  • the scan line 201, the data line 202, and the power line 203 are formed on the transparent substrate 31, a material layer 50 is coated on the transparent substrate 31.
  • the material layer 50 includes a first transparent conductive oxide layer 51, a metal layer 52, and a second transparent conductive oxide layer 53.
  • the material layer 50 is subjected to a first etching treatment, such as a yellow photolithography etching process: a photoresist layer is formed on the material layer 50, and then the material layer 50 is irradiated with light. Etching is performed to form the structure illustrated in Figure 5B.
  • the area A corresponds to the power line 203, and the material layer 50 in the area is formed as the first transparent conductive oxide layer 221, the metal layer 222 and the second transparent conductive oxide layer 223 of the conductive layer 22;
  • the organic light emitting diode is formed in the region, and the material layer 50 of the region still includes the first transparent conductive oxide layer 51, the metal layer 52, and the second transparent conductive oxide layer 53.
  • the material layer 50 is subjected to a second yellow light lithography process: a photoresist layer is coated on the formed conductive layer 22, and then subjected to a light etching process to make the material layer of the B region. Only the first transparent conductive oxide layer 51 remains, and the anode layer 32 forming the organic light emitting diode is formed.
  • the material layer 50 has at least one transparent conductive oxide layer by coating a material layer 50 over the entire transparent substrate 31. At least one electrically conductive metal layer, after which the material layer 50 is subjected to a mask etching process, so that the material layer 50 corresponding to the power line 203 retains at least one transparent conductive oxide layer and at least one metal layer as the conductive layer 22, thereby The conductive layer is realized; and the material layer 50 corresponding to the display region 30 retains only one transparent conductive oxide layer as the anode layer 32.
  • the conductive layer 22 can conduct electricity, the conductive layer 22 can share the conductive function of the power line 203, thereby reducing the volume of the power line 203, for example, reducing the width L2 of the power line, where L2 ⁇ L1 (please refer to Figure 2 together), so that the aperture ratio of the organic display device can be increased. In turn, the life of the panel is increased. Moreover, since the width L2 of the power supply line becomes small, the problem of excessive voltage drop can be avoided, and the brightness of each organic light emitting diode is made uniform, thereby improving the uniformity of panel display.
  • the material layer 50 can also be other multilayer structures, such as a two-layer structure, that is, a transparent conductive oxide layer including one layer and a metal layer of one layer.
  • a two-layer structure that is, a transparent conductive oxide layer including one layer and a metal layer of one layer.
  • it may also be a four-layer structure, that is, sequentially including a transparent conductive oxide layer, a metal layer, a transparent conductive oxide layer, a metal layer, or the like, as long as the anode layer 32 can be formed in the display region 30 by etching and formed on the power line 203.
  • the conductive layer 22 may be within the scope of the present invention, and is not enumerated here.
  • FIG. 6 is a schematic flow chart of a preferred embodiment of a method for fabricating an organic display device according to the present invention.
  • a transparent substrate 31 is provided, and a switching element 21, a scanning line 201, a data line 202, and a power supply line 203 are formed on the element region 20 of the transparent substrate 31.
  • the switching element 21 is, for example, a TFT transistor.
  • step S602 a material layer 50 is coated on the transparent substrate 31, wherein the material layer 50 covers the switching element 21, the scanning line 201, the data line 202, the power supply line 203, and the display area 30 of the organic display device (FIG. 4).
  • step S603 the material layer 50 is subjected to a mask etching process to form a conductive conductive layer 22 on the power line 203, and a light-permeable layer is formed on the corresponding display area of the transparent substrate 31.
  • Anode layer 32 is
  • the conductive layer 22 and the power line 203 are electrically connected together, and the width L2 of the power line 203 can be designed to be smaller.
  • step S604 the hole transport layer 33, the organic light-emitting layer 34, the electron transport layer 35, and the cathode layer 36 are continuously formed on the anode layer 32 to form an organic light-emitting diode in the display region 30.
  • the material layer 50 is a multi-layer structure comprising at least one layer of a light transmissive transparent conductive oxide layer and at least one electrically conductive metal layer.
  • the material of the transparent conductive oxide layer is indium tin oxide
  • the material of the metal layer is copper.
  • the material layer 50 may have a two-layer structure, that is, a transparent conductive oxide layer including one layer and a metal layer of one layer, or a three-layer structure, for example, please refer to FIG. 5A-5C, that is, sequentially
  • the first transparent conductive oxide layer 51, the metal layer 52, and the second transparent conductive oxide layer 53 may be formed by forming an anode layer 32 in the display region 30 and forming a conductive layer 22 on the power source line 203 by etching. Within the scope of protection of the present invention, it is not enumerated here.
  • anode layer of an organic light emitting diode In the process of forming an anode layer of an organic light emitting diode, a material layer is coated on the entire transparent substrate, and then the material layer is subjected to a mask etching process, so that a material layer corresponding to the power line forms a conductive layer, thereby Conductive is achieved; and the material layer corresponding to the display area forms an anode layer. Since the conductive layer can conduct electricity, the conductive layer can share the conductive function of the power line, thereby reducing the volume of the power line, for example, reducing the width of the power line, thereby increasing the aperture ratio of the organic display device. In turn, the voltage drop problem can be avoided, so that the organic light-emitting diodes emit light uniformly.

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Description

[根据细则37.2由ISA制定的发明名称]　有机显示装置及其制作方法 技术领域
本发明涉及显示技术领域，特别是涉及一种有机发光二极管显示器及其制作方法。
 背景技术
有机电激光显示器(Organic Electroluminesence Display, OELD)是新一代显示装置，其一般是使用有机发光二极管（Organic Light Emitting Diode，OLED）作为发光显示组件。
有机发光二极管是通过将有机发光材料夹在透明阳极和金属反射阴极之间，对有机发光材料施加电压来进行发光。由于有机电激光显示器不需要液晶跟传统的背光模组，可以制造的比较轻薄，比起其它类型的平板显示器件，OLED消耗的电力较少，且OLED可以在宽的温度范围内工作，且制造成本较低，因此得到越来越广泛的应用。
请参阅图1，图1为现有技术中的显示装置的剖视结构示意图，图2为该显示装置的俯视结构示意图。
在图2中，包括有数据线101、扫描线102以及电源线103，上述三者交叉限定的区域设置有元件区18和显示区19。请参阅图1，所述元件区18内形成有开关元件12，该开关元件12形成于透明基底11上。而所述显示区19内形成有机发光二极管（OLED），其自下而上依次包括透明基底11、阳极层13、空穴传输层14、有机发光层15、电子传输层16以及阴极层17。
其中图3和图4所示的有机显示装置为主动式有机显示装置，其内部的有机发光二级管主要由电源线传输的电流来驱动，为了保证电流能够传输到各个有机发光二级管，电源线的宽度L1一般较大，使得在传输电流过程中存在电压降，导致分配到各有机发光二级管的电压不均，从而导致各有机发光二级管的亮度不一，降低了显示质量。
而且，电源线的宽度L1一般较大的话，将会占用显示区19的空间，使得该有机显示装置的穿透率较低，影响显示质量。
因此，需解决现有技术中存在的上述技术问题。
 技术问题
本发明的一个目的在于提供一种有机显示装置，以解决现有技术中由于电源线的宽度较宽，降低了有机显示装置的穿透率，以及在传输电流过程中存在电压降，造成各有机发光二级管的亮度不一的技术问题。
本发明的又一个目的在于提供一种有机显示装置的制作方法，以解决现有技术中由于电源线的宽度较宽，降低了有机显示装置的穿透率，以及在传输电流过程中存在电压降，造成各有机发光二级管的亮度不一的技术问题。
 技术解决方案
本发明构造了一种有机显示装置，其中包括扫描线、数据线以及电源线，所述扫描线、数据线和电源线交叉限定的区域设置有显示区和元件区；
所述显示区设置有机发光二极管，该有机发光二极管包括有阳极层；所述电源线上形成有一导电层；其中有机发光二极管的阳极层与所述导电层是在同一材料层的基础上刻蚀形成，而所述材料层包括叠加的至少一可导电的金属层，以及至少一可透过光线的透明导电氧化物层。
在本发明一实施例中：其中所述导电层包括至少一金属层，而所述阳极层则由一层透明导电氧化物层形成。
在本发明一实施例中：其中所述材料层包括依次叠加的第一透明导电氧化物层、金属层以及第二透明导电氧化物层；
其中所述导电层包括第一透明导电氧化物层、金属层以及第二透明导电氧化物层；而所述阳极层由第一透明导电氧化物层形成。
在本发明一实施例中：其中所述透明导电氧化物层的材料为铟锡氧化物，所述金属层的材料为铜。
在本发明一实施例中：其中所述该元件区设置有开关元件，所述开关元件分别连接所述扫描线、数据线、电源线以及有机发光二级管，用于控制所述有机发光二级管的开关。
本发明的另一个目的在于提供一种有机显示装置，以解决现有技术中由于电源线的宽度较宽，降低了有机显示装置的穿透率，以及在传输电流过程中存在电压降，造成各有机发光二级管的亮度不一的技术问题。
为解决上述技术问题，本发明构造了一种有机显示装置，包括扫描线、数据线以及电源线，所述扫描线、数据线和电源线交叉限定的区域设置有显示区；
所述显示区设置有机发光二极管，该有机发光二极管包括有阳极层；所述电源线上形成有一导电层；其中有机发光二极管的阳极层与所述导电层是在同一材料层的基础上刻蚀形成。
在本发明一实施例中：所述材料层包括叠加的至少一可导电的金属层，以及至少一可透过光线的透明导电氧化物层；
所述导电层包括至少一金属层，而所述阳极层则由一层透明导电氧化物层形成。
在本发明一实施例中：所述材料层包括依次叠加的第一透明导电氧化物层、金属层以及第二透明导电氧化物层；
其中所述导电层包括第一透明导电氧化物层、金属层以及第二透明导电氧化物层；而所述阳极层由第一透明导电氧化物层形成。
在本发明一实施例中：所述透明导电氧化物层的材料为铟锡氧化物，所述金属层的材料为铜。
在本发明一实施例中：所述扫描线、数据线和电源线交叉限定的区域还包括元件区，该元件区设置有开关元件，所述开关元件分别连接所述扫描线、数据线、电源线以及有机发光二级管，用于控制所述有机发光二级管的开关。
本发明的又一个目的在于提供一种有机显示装置的制作方法，以解决现有技术中由于电源线的宽度较宽，降低了有机显示装置的穿透率，以及在传输电流过程中存在电压降，造成各有机发光二级管的亮度不一的技术问题。
为解决上述技术问题，本发明构造了一种有机显示装置的制作方法，所述方法包括以下步骤：
提供透明基底，在所述透明基底上形成扫描线、数据线以及电源线，其中所述扫描线、数据线以及电源线交叉限定的区域包括显示区；
在已形成所述扫描线、数据线以及电源线的透明基底上涂布材料层，并对所述材料层进行刻蚀处理，以在所述电源线上形成可导电的导电层，而在所述透明基底的显示区形成可透光的阳极层；
在已形成阳极层的透明基底上继续形成空穴传输层、有机发光层、电子传输层以及阴极层，以在所述透明基底的显示区形成有机发光二级管。
在本发明一实施例中：所述材料层包括叠加的至少一可导电的金属层，以及至少一可透过光线的透明导电氧化物层；所述导电层包括至少一金属层，而所述阳极层则由一层透明导电氧化物层形成。
在本发明一实施例中：所述材料层包括依次叠加的第一透明导电氧化物层、金属层以及第二透明导电氧化物层；其中所述导电层包括第一透明导电氧化物层、金属层以及第二透明导电氧化物层；而所述阳极层由第一透明导电氧化物层形成。
在本发明一实施例中：所述透明导电氧化物层的材料为铟锡氧化物，所述金属层的材料为铜。
在本发明一实施例中：所述扫描线、数据线和电源线交叉限定的区域还包括元件区；
在形成扫描线、数据线以及电源线的过程中，还在该元件区形成开关元件，并使得所述开关元件分别连接所述扫描线、数据线、电源线以及有机发光二级管，以控制所述有机发光二级管的开关。
 有益效果
相对于现有技术，本发明在制作形成有机发光二极管的阳极层的过程中，在整个透明基底上涂布一材料层，之后对该材料层进行光罩刻蚀处理，使得电源线对应的材料层形成导电层，从而实现导电；而显示区对应的材料层形成阳极层。由于所述导电层能够导电，因此所述导电层可以分担电源线的导电功能，进而可以减小所述电源线的体积，譬如可以减小电源线的宽度，从而可以增加有机显示装置的开口率，进而可以避免电压降问题，使得各有机发光二级管均匀发光。
 附图说明
图1为现有技术中有机显示装置的剖视结构示意图；
图2为现有技术中有机显示装置的俯视结构示意图；
图3为本发明中有机显示装置的较佳实施例剖视结构示意图；
图4为本发明中有机显示装置的较佳实施例俯视结构示意图；
图5A-5C为本发明中对材料层进行刻蚀形成导电层和阳极层的示意图；
图6为本发明中有机显示装置的制作方法的较佳实施例流程示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
图4为本发明提供的有机显示装置的较佳实施例的俯视结构示意图，所述有机显示装置包括扫描线201、数据线202以及电源线203，所述扫描线201、数据线202和电源线203可形成在同一层，并在同一制程中形成。其中所述扫描线201、数据线202以及电源线203交叉限定的区域包括有元件区20和显示区30。
图3为对应图4中元件区20和显示区30的剖视结构示意图。其中所述元件区20设置有开关元件21，譬如薄膜场效应晶体管（Thin Film Transistor，TFT），所述电源线203上形成有一导电层22，具体说来，所述导电层22还形成于所述开关元件21、扫描线201以及数据线202上。在图3所示的实施例中，所述导电层22依次包括第一透明导电氧化物层221、金属层222以及第二透明导电氧化物层223。
请再参阅图3，所述显示区30设置有一有机发光二极管，该有机发光二极管由以下部件组成：透明基底31、阳极层32、空穴传输层33、有机发光层34、电子传输层35以及阴极层36。在偏压条件下，来自阴极层36的电子与来自阳极层32的空穴在有机发光层34处复合，导致有机发光层34发射光源，有机发光层34发出的光源依次经过空穴传输层33、阳极层32以及透明基底31而射出。
在本发明中，所述开关元件21、扫描线201、数据线202以及电源线203形成于所述透明基底31和所述导电层22之间，并可由同一制程形成。而所述导电层22和所述有机发光二极管的阳极层32是在同一材料层的基础上制程形成。所述导电层22的第一透明导电氧化物层221、第二透明导电氧化物层223以及所述有机发光二极管的阳极层32均由相同的材料形成，譬如铟锡氧化物，以使得光线透过。而所述导电层22的金属层222则有可导电的材质形成，譬如金属铜。
请一并参阅图5A-5C，图5A-5C所示为所述导电层22和所述有机发光二极管的阳极层32在同一材料层基础上制程形成的示意图。
在图5A中，请一并参阅图3，在所述透明基底31上形成所述开关元件21、扫描线201、数据线202以及电源线203之后，在透明基底31上涂布一材料层50，该材料层50包括第一透明导电氧化物层51、金属层52以及第二透明导电氧化物层53。
在图5B中，对所述材料层50进行第一次刻蚀处理，譬如进行黄光微影刻蚀处理：在所述材料层50上形成一光阻层，之后对所述材料层50照射光线后进行刻蚀，形成图5B所述的结构。其中A区域对应所述电源线203，该区域内的材料层50形成为所述导电层22的第一透明导电氧化物层221、金属层222以及第二透明导电氧化物层223，；而B区域内用来形成有机发光二极管，该区域的材料层50仍包括第一透明导电氧化物层51、金属层52以及第二透明导电氧化物层53。
在图5C中，对所述材料层50进行第二次黄光微影刻蚀制程：在已形成的导电层22上涂布一光阻层，之后进行光照刻蚀处理，以使得B区域的材料层50仅保留有第一透明导电氧化物层51，进行形成所述有机发光二极管的阳极层32。
从上述描述不难看出，本发明在制作形成有机发光二极管的阳极层32的过程中，通过在整个透明基底31上涂布一材料层50，该材料层50具有至少一透明导电氧化物层以及至少一可导电的金属层，之后对该材料层50进行光罩刻蚀处理，使得电源线203对应的材料层50保留有至少一透明导电氧化物层以及至少一金属层作为导电层22，从而实现导电；而显示区30对应的材料层50仅保留一层透明导电氧化物层作为阳极层32。
由于所述导电层22能够导电，因此所述导电层22可以分担电源线203的导电功能，进而可以减小所述电源线203的体积，譬如可以减小电源线的宽度L2，其中L2< L1（请一并参阅图2），从而可以增加有机显示装置的开口率, 进而提升面板的寿命。而且由于电源线的宽度L2变小，可以避免电压降过大的问题，进而使得各有机发光二极管的亮度一致，改善面板显示的均匀性。
在一些其它实施例中，所述材料层50还可以为其它的多层结构，譬如可以为两层结构，即包括一层的透明导电氧化物层和一层的金属层。当然也可以为四层结构，即依次包括透明导电氧化物层、金属层、透明导电氧化物层、金属层等，只要能够经过刻蚀在显示区30形成阳极层32以及在电源线203上形成导电层22即可，均在本发明保护范围内，此处不一一列举。
图6为本发明提供的有机显示装置的制作方法的较佳实施例流程示意图。
在步骤S601中，提供透明基底31，在所述透明基底31的元件区20上形成开关元件21、扫描线201、数据线202以及电源线203。其中该开关元件21譬如为TFT晶体管，
在步骤S602中，在透明基底31上涂布材料层50，其中该材料层50覆盖开关元件21、扫描线201、数据线202、电源线203以及有机显示装置的显示区30（图4）。
在步骤S603中，对所述材料层50进行光罩刻蚀处理，以在所述电源线203上形成可导电的导电层22，而在所述透明基底31对应的显示区形成可透光的阳极层32。
其中所述导电层22与所述电源线203共同实现导电，进而可以将所述电源线203的宽度L2设计的更小。
在步骤S604中，在所述阳极层32上继续形成空穴传输层33、有机发光层34、电子传输层35以及阴极层36，以在显示区30形成有机发光二极管。
其中所述材料层50为多层结构，包括至少一层的可透光的透明导电氧化物层以及至少一可导电的金属层。譬如所述透明导电氧化物层的材料为铟锡氧化物，所述金属层的材料为铜。
本发明中，所述材料层50可以为两层结构，即包括一层的透明导电氧化物层和一层的金属层，也可以为三层结构，譬如请参阅图5A-5C，即依次包括第一透明导电氧化物层51、金属层52、第二透明导电氧化物层53，只要能够经过刻蚀在显示区30形成阳极层32以及在电源线203上形成导电层22即可，均在本发明保护范围内，此处不一一列举。具体的形成所述导电层22和阳极层32的过程请一并参阅图5A-5C以及针对图5A-5C的描述，此处不再赘述。
本发明在制作形成有机发光二极管的阳极层的过程中，在整个透明基底上涂布一材料层，之后对该材料层进行光罩刻蚀处理，使得电源线对应的材料层形成导电层，从而实现导电；而显示区对应的材料层形成阳极层。由于所述导电层能够导电，因此所述导电层可以分担电源线的导电功能，进而可以减小所述电源线的体积，譬如可以减小电源线的宽度，从而可以增加有机显示装置的开口率，进而可以避免电压降问题，使得各有机发光二级管均匀发光。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
 本发明的实施方式
工业实用性
序列表自由内容

Claims (15)

  1. 一种有机显示装置，其中包括扫描线、数据线以及电源线，所述扫描线、数据线和电源线交叉限定的区域设置有显示区和元件区；
    所述显示区设置有机发光二极管，该有机发光二极管包括有阳极层；所述电源线上形成有一导电层；其中有机发光二极管的阳极层与所述导电层是在同一材料层的基础上刻蚀形成，而所述材料层包括叠加的至少一可导电的金属层，以及至少一可透过光线的透明导电氧化物层。
  2. 根据权利要求1所述的有机显示装置，其中所述导电层包括至少一金属层，而所述阳极层则由一层透明导电氧化物层形成。
  3. 根据权利要求2所述的有机显示装置，其中所述材料层包括依次叠加的第一透明导电氧化物层、金属层以及第二透明导电氧化物层；
    其中所述导电层包括第一透明导电氧化物层、金属层以及第二透明导电氧化物层；而所述阳极层由第一透明导电氧化物层形成。
  4. 根据权利要求2所述的有机显示装置，其中所述透明导电氧化物层的材料为铟锡氧化物，所述金属层的材料为铜。
  5. 根据权利要求1所述的有机显示装置，其中所述该元件区设置有开关元件，所述开关元件分别连接所述扫描线、数据线、电源线以及有机发光二级管，用于控制所述有机发光二级管的开关。
  6. 一种有机显示装置，其中包括扫描线、数据线以及电源线，所述扫描线、数据线和电源线交叉限定的区域设置有显示区；
    所述显示区设置有机发光二极管，该有机发光二极管包括有阳极层；所述电源线上形成有一导电层；其中有机发光二极管的阳极层与所述导电层是在同一材料层的基础上刻蚀形成。
  7. 根据权利要求6所述的有机显示装置，其中所述材料层包括叠加的至少一可导电的金属层，以及至少一可透过光线的透明导电氧化物层；
    所述导电层包括至少一金属层，而所述阳极层则由一层透明导电氧化物层形成。
  8. 根据权利要求7所述的有机显示装置，其中所述材料层包括依次叠加的第一透明导电氧化物层、金属层以及第二透明导电氧化物层；
    其中所述导电层包括第一透明导电氧化物层、金属层以及第二透明导电氧化物层；而所述阳极层由第一透明导电氧化物层形成。
  9. 根据权利要求7所述的有机显示装置，其中所述透明导电氧化物层的材料为铟锡氧化物，所述金属层的材料为铜。
  10. 根据权利要求6所述的有机显示装置，其中所述扫描线、数据线和电源线交叉限定的区域还包括元件区，该元件区设置有开关元件，所述开关元件分别连接所述扫描线、数据线、电源线以及有机发光二级管，用于控制所述有机发光二级管的开关。
  11. 一种有机显示装置的制作方法，其中所述方法包括以下步骤：
    提供透明基底，在所述透明基底上形成扫描线、数据线以及电源线，其中所述扫描线、数据线以及电源线交叉限定的区域包括显示区；
    在已形成所述扫描线、数据线以及电源线的透明基底上涂布材料层，并对所述材料层进行刻蚀处理，以在所述电源线上形成可导电的导电层，而在所述透明基底的显示区形成可透光的阳极层；
    在已形成阳极层的透明基底上继续形成空穴传输层、有机发光层、电子传输层以及阴极层，以在所述透明基底的显示区形成有机发光二级管。
  12. 根据权利要求11所述的有机显示装置的制作方法，其中所述材料层包括叠加的至少一可导电的金属层，以及至少一可透过光线的透明导电氧化物层；所述导电层包括至少一金属层，而所述阳极层则由一层透明导电氧化物层形成。
  13. 根据权利要求12所述的有机显示装置的制作方法，其中所述材料层包括依次叠加的第一透明导电氧化物层、金属层以及第二透明导电氧化物层；其中所述导电层包括第一透明导电氧化物层、金属层以及第二透明导电氧化物层；而所述阳极层由第一透明导电氧化物层形成。
  14. 根据权利要求12所述的有机显示装置的制作方法，其中所述透明导电氧化物层的材料为铟锡氧化物，所述金属层的材料为铜。
  15. 根据权利要求11所述的有机显示装置的制作方法，其中所述扫描线、数据线和电源线交叉限定的区域还包括元件区；
    在形成扫描线、数据线以及电源线的过程中，还在该元件区形成开关元件，并使得所述开关元件分别连接所述扫描线、数据线、电源线以及有机发光二级管，以控制所述有机发光二级管的开关。
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