WO2014017427A1 - Dispositif électroluminescent semi-conducteur - Google Patents

Dispositif électroluminescent semi-conducteur Download PDF

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Publication number
WO2014017427A1
WO2014017427A1 PCT/JP2013/069773 JP2013069773W WO2014017427A1 WO 2014017427 A1 WO2014017427 A1 WO 2014017427A1 JP 2013069773 W JP2013069773 W JP 2013069773W WO 2014017427 A1 WO2014017427 A1 WO 2014017427A1
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WIPO (PCT)
Prior art keywords
light emitting
unit
semiconductor
light
semiconductor substrate
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PCT/JP2013/069773
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English (en)
Japanese (ja)
Inventor
梶山　康一
利通 名須川
正康 金尾
晋 石川
吉司 小川
Original Assignee
株式会社ブイ・テクノロジー
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Publication of WO2014017427A1 publication Critical patent/WO2014017427A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Definitions

  • the present invention relates to a semiconductor light emitting device used for display, illumination, and the like.
  • a light emitting device for display or illumination is required to be thin in order to reduce installation or mounting space, and further, high definition is required to realize high-quality display or illumination.
  • flat panel formation is progressing in which unit light-emitting regions called pixels or picture elements are formed on a substrate.
  • unit light-emitting regions called pixels or picture elements are formed on a substrate.
  • different colors for example, RGB
  • the active matrix drive system is mainly used in light-emitting devices that meet the demands for thinner and higher definition.
  • electrodes pixel electrodes
  • thin film transistors Thin that control electric supply to each electrode
  • LCD Film-Transistor
  • driver wiring source line, gate line
  • An organic EL display device or the like is known as a light emitting device adopting an active matrix driving method.
  • the prior art described in Patent Document 1 below is a semiconductor device including TFTs for driving an organic EL display device or the like in an active matrix, and when connecting three or more wirings efficiently and It has been proposed to have a contact structure that can be connected in a small area.
  • a light emitting device adopting the above-described active driving method has a structure in which a frame region (a region that does not emit light) is formed around a unit light emitting region by a driver wiring, a TFT, or the like, thereby reducing an effective light emitting area on the substrate. It has become.
  • a frame region a region that does not emit light
  • TFT TFT
  • the area of the driver wiring can be reduced by improving the contact structure of the stacked driver wiring as in the prior art described above, but this also eliminates the frame area around the unit light emitting area.
  • the wiring structure becomes complicated, which causes other problems such as a decrease in yield and a decrease in productivity.
  • the present invention is an example of a problem to deal with such a problem. That is, in a light emitting device that meets the demands for thinning and high definition, the frame region around the unit light emitting region is made as small as possible to increase the effective light emitting area, and as a light emitting device mounted on a portable information processing terminal, It is an object of the present invention to achieve a compact light emitting device that performs display and illumination including mounting of other functional components.
  • a semiconductor light emitting device has at least the following configuration.
  • a light-emitting function unit in which a plurality of unit light-emitting regions are arranged on a semiconductor substrate is formed, and the unit light-emitting region includes a pn junction that uses the semiconductor substrate as a common semiconductor layer as a light emitting unit, and the plurality of unit light-emitting regions
  • the unit light emitting regions arranged adjacent to each other include the light emitting portions that emit light of different colors.
  • the semiconductor light emitting device having such a feature can drive a pn junction serving as a light emitting portion for each unit light emitting region by using a semiconductor substrate as a common semiconductor layer.
  • a driving portion is formed in a common semiconductor layer, a light emitting surface without the driving portion can be formed on the semiconductor substrate. According to this, since there is no obstruction factor for arranging adjacent unit light emitting areas close to each other on the light emission surface side, the frame area of the unit light emitting area can be minimized.
  • a common electrode made of a transparent electrode is formed with one surface side of the semiconductor substrate as a light emitting side, and the semiconductor substrate An individual electrode and a driving unit for each unit light emitting region can be formed on the other surface side (the side opposite to the light emitting side).
  • the effective light emitting area ratio (100 ⁇ effective light emitting area / total area of the light emitting functional portion) of the light emitting functional portion in which a plurality of unit light emitting regions are arranged can be brought close to 100%, and efficient use of the emitted light can be achieved. It becomes possible.
  • the semiconductor light emitting device of the present invention includes a light emitting unit that emits light of different colors in unit light emitting areas arranged adjacent to each other, high-definition multicolor display or high-quality white illumination or color illumination is provided. Can be realized.
  • FIG. 1A and 1B are explanatory views showing a semiconductor light emitting device according to an embodiment of the present invention
  • FIG. 1A is a plan view
  • FIG. 1B is an enlarged view of a portion A in FIG. 1A.
  • (A) has shown the example of the planar arrangement
  • (B) is explanatory drawing which showed the cross-sectional structure of the unit light emission area
  • FIG. 4 is an explanatory view showing a process example for forming the semiconductor light emitting device of the configuration example shown in FIG. 3, showing a process of forming the components of the semiconductor light emitting device.
  • FIG. 4 is an explanatory view showing an example of a process for forming the semiconductor light emitting device of the configuration example shown in FIG. 3 and showing an annealing process applied to the pn junction.
  • FIG. 7 (a) has shown the surface side of the semiconductor substrate
  • FIG.7 (b) has shown the back surface side of the semiconductor substrate).
  • FIG. 1A and 1B are explanatory views showing a semiconductor light emitting device according to an embodiment of the present invention
  • FIG. 1A is a plan view
  • FIG. 1B is an enlarged view of portion A in FIG. 1A
  • the light emitting function unit 10A is configured by arranging a plurality of unit light emitting regions 1U.
  • the unit light emission area 1U here is one area in which the light emission output can be individually driven. Pixels for image display, color pixels for color image display, and the like are included in the unit light emission area 1U. included.
  • FIG. 2 is an explanatory view showing the structure of the unit light emitting region in the embodiment of the present invention.
  • FIG. 2A is an example showing the structure of the unit light emitting region
  • FIG. 2B is another example showing the structure of the unit light emitting region
  • FIG. 2C shows an example of the structure of the drive unit.
  • the unit light emitting region 1U includes a pn junction 11 having the semiconductor substrate 10 as a common semiconductor layer, and this pn junction 11 is used as a light emitting portion.
  • the semiconductor substrate 10 is an n-type semiconductor layer 10n and is a semiconductor layer common to the plurality of unit light emitting regions 1U, and a p-type semiconductor layer 10p formed on the semiconductor substrate 10 is formed.
  • the p-type semiconductor layer 10p may be a layer common to the plurality of unit light emitting regions 1U as shown in FIG. 2A, or separated for each of the plurality of unit light emitting regions 1U as shown in FIG. 2B. It is good also as a layer.
  • an insulating layer may be formed between the adjacent unit light emitting regions 1U for isolation.
  • a pn junction 11 is formed near the boundary between the n-type semiconductor layer 10n and the p-type semiconductor layer 10p. Then, light of the first color C 1 is emitted from the pn junction 11 of one unit light emitting region 1U (A), and the pn of another unit light emitting region 1U (B) adjacent to the unit light emitting region 1U (A). A second color C 2 different from the first color C 1 is emitted from the joint portion 11.
  • the entire light emitting function unit 10A performs full color display or emits white light
  • the adjacent three unit light emitting areas 1U exhibit different emission colors, and each color is selected from RGB.
  • the present invention is not limited to this, and multi-color display and multi-color illumination are possible as long as at least two adjacent unit light-emitting regions 1U exhibit different emission colors.
  • the unit light emitting region 1U includes a first electrode 12 made of a transparent electrode on one surface side of the semiconductor substrate 10, and includes a second electrode 13 independent for each unit light emitting region 1U on the other surface side of the semiconductor substrate 10.
  • a drive unit 14 that individually supplies electricity to the second electrode 13 is provided on the other surface side of the semiconductor substrate 10.
  • the drive unit 14 here includes a switching element and a driver wiring.
  • the first electrode 12 can use a transparent conductive material such as ITO or IZO
  • the second electrode 13 can use a metal electrode such as Al.
  • the first electrode 12, the second electrode 13, and the drive unit 14 are configured to drive the unit light emitting region 1U in an active matrix, and by providing this, high-definition color image display and high-quality white or color illumination are provided. Is possible.
  • the feature here is that one surface side of the semiconductor substrate 10 is the light emitting side, and there is no component that blocks light on the one surface side. According to such a structure, the effective light emitting area ratio of the light emitting function unit 10A in which a plurality of unit light emitting regions are arranged can be close to 100%, and the emitted light can be efficiently used.
  • the driving unit 14 can be configured by a semiconductor driving element unit such as a MOS transistor.
  • p-type semiconductor layers 14p1 and 14p2 are formed on an n-type semiconductor layer 10n of a semiconductor substrate 10, and a source electrode 14s and a drain electrode 14d are formed thereon, respectively.
  • a gate electrode 14g is formed on the channel region 14n between 14p2 via an insulating film 14b.
  • the drain electrode 14d, the gate electrode 14g, and the source electrode 14s are each connected to an electrode wiring for driving the unit light emitting region 1U.
  • the drain electrode 14d is connected to the second electrode 13
  • the gate electrode 14g is connected to the gate line
  • the source electrode 14s is connected to the data line.
  • Such a driving unit 14 can be formed by a known semiconductor lithography process in the semiconductor substrate 10 that forms a common semiconductor layer in the unit light emitting region 1U.
  • the pn junction 11 serving as a light emitting portion can be driven for each unit light emitting region 1U by using the semiconductor substrate 10 as a common semiconductor layer.
  • the driving unit 14 is formed in a common semiconductor layer, a light emission surface in which the driving unit 14 does not exist can be formed on one surface of the semiconductor substrate 10. According to this, since there is no obstruction factor for arranging adjacent unit light emitting regions 1U close to each other on the light emission surface side, it is possible to minimize the frame region of the unit light emitting region 1U.
  • Si silicon
  • the Si crystal is annealed using phonons to generate dressed photons in the vicinity of the pn junction, thereby changing the indirect transition semiconductor as if it were a direct transition semiconductor.
  • the semiconductor substrate 10 is an n-type Si crystal substrate doped with arsenic (As) as the first material, and boron (B) as the second material is concentrated at a high concentration.
  • the p-type semiconductor layer 10p is formed by doping.
  • the pn junction 11 is irradiated with light, thereby generating dressed photons in the vicinity of the pn junction 11.
  • the pn junction 11 in which the dressed photon is generated in this way emits light having a wavelength equivalent to the wavelength of the light irradiated in the annealing process when electricity is supplied to the pn junction 11.
  • An example of the boron (B) doping condition is a dose density of 5 ⁇ 10 13 / cm 2 , an acceleration energy at the time of implantation: 700 keV, and a wavelength of light irradiated in the annealing process is set to a desired color band in the visible light range.
  • the semiconductor light emitting device 1 having such a configuration can be thinned and a high-definition display device can be realized by using the light emitting function unit 10A as an image display unit. Moreover, the semiconductor light-emitting device 1 can implement
  • the semiconductor light emitting device 1 can form the light emitting function unit 10A on the silicon semiconductor substrate as described above, the light receiving function unit and other integrated circuit functions are formed on the silicon semiconductor substrate on which the light emitting function unit 10A is formed. It can be formed by concentrating parts. According to this, by integrating other electronic component functions on a single semiconductor substrate 10 constituting the semiconductor light emitting device 1, it is possible to drastically save the component arrangement configuration in the electronic device. Therefore, a portable information processing terminal such as a mobile phone or a smartphone equipped with the semiconductor light emitting device 1 can achieve a dramatic reduction in size, thickness, and weight, and a light emitting / receiving function such as a display unit. High functionality can be achieved.
  • FIG. 3 is an explanatory view showing another configuration example of the semiconductor light emitting device (the same reference numerals are given to the same parts as those in the configuration example described above, and the duplicate description is omitted).
  • FIG. 3A shows an example of a planar arrangement of the unit light emitting areas 1U.
  • one light emitting unit Px is formed by a plurality of unit light emitting regions 1U (A), 1U (B), and 1U (C) arranged adjacent to each other.
  • the unit light emitting area 1U (A) emits light of emission color C1
  • the unit light emission area 1U (B) emits light of emission color C2
  • the unit light emission area 1U (C) emits light of emission color C3.
  • the emission color C1 is red (R)
  • the emission color C2 is green (G)
  • the emission color C3 is blue (B)
  • FIG. 3B is an explanatory diagram showing a cross-sectional configuration of the unit light emitting region 1U in one light emitting unit Px.
  • each unit light emitting region 1 ⁇ / b> U is partitioned by an element isolation layer 20 formed inside the semiconductor substrate 10 and an interlayer insulating layer 21 formed on the surface of the semiconductor substrate 10.
  • the unit light emitting region 1U (A) or the unit light emitting region 1U (B) is defined as a first unit light emitting region
  • the unit light emitting region 1U (C) is defined as a second unit light emitting region.
  • the unit light emitting region 1U (A) or the unit light emitting region 1U (B) that is the first unit light emitting region is a light emitting portion (pn junction) that emits the first light emission color C1 or C2 to the Si substrate that is the semiconductor substrate 10. Part 11) is formed. That is, the light emitting part in the unit light emitting region 1U (A) or the unit light emitting region 1U (B) which is the first unit light emitting region is highly doped with the second material in the n-type semiconductor layer 10n doped with the first material. Thus, a p-type semiconductor layer 10p is formed, and a pn junction 11 is formed near the boundary between the n-type semiconductor layer 10n and the p-type semiconductor layer 10p.
  • the pn junction 11 generates dressed photons by irradiating light having a wavelength band of the emission color C1 or C2, which is the first emission color, in the process of diffusing the second material by annealing. I am letting.
  • the unit light emitting region 1U (C) that is the second unit light emitting region is a light emitting portion (pn junction portion 11) that emits the second light emission color C3 to the SiC layer 22 stacked on the Si substrate that is the semiconductor substrate 10. ) Is formed. That is, the light emitting portion in the unit light emitting region 1U (C) which is the second unit light emitting region is formed by doping the n-type semiconductor layer 10n doped with the first material with a high concentration of the second material, thereby forming the p-type semiconductor layer 10p. A pn junction 11 is formed in the vicinity of the boundary between the n-type semiconductor layer 10n and the p-type semiconductor layer 10p. As described above, the pn junction 11 generates dressed photons by irradiating light having a wavelength band of the second emission color C3 in the process of diffusing the second material by annealing.
  • the first substance described above is a Group 15 element such as arsenic (As), and the second substance is a Group 13 element such as boron (B).
  • FIG. 4 shows a process of forming a pattern of the SiC layer 22 on the semiconductor substrate 10 made of an Si substrate.
  • a SiC layer 22 (n-type semiconductor layer 10n) is formed by epitaxial growth on the semiconductor substrate 10 (n-type semiconductor substrate layer 10n) made of the Si substrate shown in FIG.
  • a negative pattern of the resist layer 23 for patterning the SiC layer 22 is formed by a photolithography process.
  • an SiO 2 film 24 is formed on the resist layer 23 and the opened SiC layer 22.
  • a pattern of the SiO 2 layer 24 is formed on the SiC layer 22 as shown in FIG.
  • the pattern of the SiC layer 22 on the semiconductor substrate (Si substrate) 10 as shown in FIG. Form is a place where the unit light emitting region 1U (C) described above is formed.
  • FIG. 5 shows a process of forming the components of the semiconductor light emitting device.
  • a groove 10e that partitions the unit light emitting region 1U is formed in the semiconductor substrate 10 (n-type semiconductor substrate layer 10n), and SiO 2 is formed on the semiconductor substrate 10 and the patterned SiC layer 22.
  • Two layers 25 are formed by a CVD method or the like.
  • the interlayer insulating layer 21 is formed by patterning the SiO 2 layer 25.
  • the element isolation layer 20 described above is formed integrally with the interlayer insulating layer 21.
  • the second electrode 13 is patterned on the back side of the semiconductor substrate 10, and the drive unit 14 is further formed.
  • the pn junction 11 is formed by highly doping the semiconductor substrate 10 and the SiC layer 22 with a second substance (boron (B) or the like). Thereafter, as shown in FIG. 5E, an ITO film to be the first electrode 12 is formed on the surface side of the semiconductor substrate 10.
  • FIG. 6 shows an annealing process applied to the pn junction.
  • the second material is diffused by Joule heat generated by applying a voltage V between the first electrode 12 and the second electrode 13.
  • the light emitting units 1U (A), 1U (B), and 1U (C) are irradiated with light having different wavelengths.
  • voltages are individually applied to the unit light emitting regions 1U (A), 1U (B), and 1U (C).
  • the light irradiated to the pn junction part 11 in each process may selectively irradiate the unit light emitting region 1U being processed using a shadow mask or the like, and may include the unit light emitting regions 1U other than the unit being processed. May be irradiated uniformly.
  • FIG. 6A light having a wavelength band of the emission color C1 is applied to the pn junction 11 in the unit emission region 1U (A) while applying the voltage V between the first electrode 12 and the second electrode 13. Irradiated to generate a dressed photon that emits the emission color C 1 at the pn junction 11.
  • FIG. 6B light having a wavelength band of the emission color C2 is applied to the pn junction 11 in the unit emission region 1U (B) while applying the voltage V between the first electrode 12 and the second electrode 13. Irradiated to generate dressed photons that emit the emission color C 2 at the pn junction 11.
  • FIG. 6A light having a wavelength band of the emission color C1 is applied to the pn junction 11 in the unit emission region 1U (A) while applying the voltage V between the first electrode 12 and the second electrode 13. Irradiated to generate dressed photons that emit the emission color C 1 at the pn junction 11.
  • the light having the wavelength band of the emission color C3 is applied to the pn junction 11 in the unit light emitting region 1U (C) while applying the voltage V between the first electrode 12 and the second electrode 13. Irradiated to generate a dressed photon that emits the emission color C3 at the pn junction 11.
  • FIG. 7 is an explanatory view showing an example of a semiconductor light emitting device (FIG. 7A shows the front side of the semiconductor substrate, and FIG. 7B shows the back side of the semiconductor substrate).
  • the semiconductor light emitting device 1 includes the light emitting function unit 10A on the front surface side of the semiconductor substrate 10 and the drive wiring unit for driving the light emitting function unit 10A on the back surface side of the semiconductor substrate 10. 10D.
  • sensor function units 10S1, 10S2 and the like are formed on the surface side of the semiconductor substrate 10.
  • the sensor function units 10S1 and 10S2 function as, for example, an illuminance sensor or a gyro sensor.
  • a second light emitting function unit 10A1 and a sensor function unit 10S3 are formed in parallel.
  • the second light emitting function unit 10A1 functions as an illumination light emitting unit
  • the sensor function unit 10S3 functions as an image sensor unit.
  • an interface connection portion 10 ⁇ / b> J and the like can be formed on the back surface side of the semiconductor substrate 10.
  • FIG. 7 is one example in which the light emitting functional unit 10A and other functional units are integrated on the semiconductor substrate 10, and the arrangement and configuration of the functional units on the semiconductor substrate 10 are designed in various forms. Is possible.
  • 1 semiconductor light emitting device, 1U: unit light emitting region, 10: Semiconductor substrate, 10A: Light emission function part, 10A1: Second light emission function part, 10S1, 10S2, 10S3: sensor function unit, 10J: Interface connection part, 10n: n-type semiconductor layer, 10p: p-type semiconductor layer, 11: pn junction, 12: first electrode, 13: second electrode, 14: drive unit, 20: element isolation layer, 21: interlayer insulating layer, 22: SiC layer, 23: resist layer, 24, 25: SiO 2 layer

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Planar Illumination Modules (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention tente d'étendre l'aire d'émission de lumière valide en minimisant les zones d'armature dans la périphérie de zones d'émission de lumière unitaire autant que possible. Elle concerne un dispositif électroluminescent semi-conducteur (1) dans lequel : une partie de fonction d'émission de lumière (10A) sur laquelle des zones d'émission de lumière unitaires (1U) multiples sont agencées est disposée sur un substrat semi-conducteur (10) ; les zones d'émission de lumière unitaires (1U) comportent une partie de jonction pn, dans laquelle le substrat semi-conducteur (10) fonctionne comme une couche semi-conductrice commune, comme la partie d'émission de lumière ; et les zones d'émission de lumière unitaires (1U) disposées de manière adjacente les unes aux autres parmi les zones d'émission de lumière unitaires (1U) multiples comportent des parties d'émission de lumière émettant de la lumière de couleurs différentes.
PCT/JP2013/069773 2012-07-27 2013-07-22 Dispositif électroluminescent semi-conducteur WO2014017427A1 (fr)

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JP2012-167604 2012-07-27
JP2012167604A JP2015181138A (ja) 2012-07-27 2012-07-27 半導体発光装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112992964A (zh) * 2020-04-09 2021-06-18 镭昱光电科技(苏州)有限公司 发光二极管结构及其制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531867A (zh) * 2016-12-21 2017-03-22 福建昌达光电有限公司 一种能够多色块独立发光的垂直结构芯片及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311933A (ja) * 2002-11-20 2004-11-04 Samsung Electronics Co Ltd シリコン光素子及びそれを適用した画像入出力装置
JP2008517477A (ja) * 2004-12-08 2008-05-22 エレクトロニクス アンド テレコミュニケーションズ リサーチ インスチチュート 発光素子及び発光素子の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311933A (ja) * 2002-11-20 2004-11-04 Samsung Electronics Co Ltd シリコン光素子及びそれを適用した画像入出力装置
JP2008517477A (ja) * 2004-12-08 2008-05-22 エレクトロニクス アンド テレコミュニケーションズ リサーチ インスチチュート 発光素子及び発光素子の製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
T.KAWAZOE ET AL.: "Highly efficient and broadband Si homojunction structured near- infrared light emitting diodes based", APPL. PHYS. B, vol. 104, no. 4, 2011, pages 747 - 754 *
TADASHI KAWAZOE ET AL.: "A high- efficiency and high-power light emitting diode by a bulk Si crystal", OPTRONICS, 10 March 2012 (2012-03-10), pages 85 - 88 *
TADASHI KAWAZOE ET AL.: "Dressed Koshi o Riyo shita Homo Setsugo Si-LED no Sakusei Oyobi Dosa Genri to Kensho Jikken", EXTENDED ABSTRACTS, JAPAN SOCIETY OF APPLIED PHYSICS AND RELATED SOCIETIES DAI 59 KAI, 18 March 2012 (2012-03-18), pages 182 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112992964A (zh) * 2020-04-09 2021-06-18 镭昱光电科技(苏州)有限公司 发光二极管结构及其制造方法
CN112992964B (zh) * 2020-04-09 2023-07-07 镭昱光电科技(苏州)有限公司 发光二极管结构及其制造方法

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