WO2014002734A1 - 荷電粒子線装置 - Google Patents
荷電粒子線装置 Download PDFInfo
- Publication number
- WO2014002734A1 WO2014002734A1 PCT/JP2013/065910 JP2013065910W WO2014002734A1 WO 2014002734 A1 WO2014002734 A1 WO 2014002734A1 JP 2013065910 W JP2013065910 W JP 2013065910W WO 2014002734 A1 WO2014002734 A1 WO 2014002734A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- charged particle
- particle beam
- detector
- sample
- electromagnetic field
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24485—Energy spectrometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2449—Detector devices with moving charges in electric or magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2803—Scanning microscopes characterised by the imaging method
- H01J2237/2806—Secondary charged particle
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
- H01J2237/281—Bottom of trenches or holes
Definitions
- the present invention relates to a charged particle beam apparatus that performs observation, measurement, inspection, etc. of fine objects such as semiconductor devices and liquid crystals, and is particularly suitable for observation, measurement, inspection, etc. of high aspect structures such as deep grooves and deep holes.
- the present invention relates to a charged particle beam apparatus.
- circuit pattern dimension management is positioned as an indispensable technology for yield improvement and quality control.
- a CD-SEM Cross-Dimension Scanning Electron Microscopy
- the CD-SEM realizes high spatial resolution with a low energy electron beam, and can measure the dimension of the circuit pattern in the lateral direction (in-plane direction of the circuit pattern) with sub-nm accuracy.
- Patent Document 1 discloses an orthogonal electromagnetic field generator (hereinafter referred to as an ExB deflector or an ExB type filter) that deflects electrons emitted from a specimen out of the axis of the electron beam without deflecting the electron beam emitted from the electron source. Is sometimes disclosed). Patent Document 1 further describes that another ExB deflector for canceling out the aberration generated by the ExB deflector is provided. Patent Document 2 discloses a scanning electron microscope that cancels out aberrations that occur when a beam is deflected using an ExB deflector.
- an ExB deflector or an ExB type filter
- the position sensitivity detector is arranged on the image plane of the signal electrons to visualize (image) the signal electrons, and further, the position sensitivity detector is arranged on the diffraction plane of the signal electrons. It is described that direction information is reflected in an image.
- the aspect ratio (depth of structure / width of structure) of structures to be observed, measured, and inspected by a scanning electron microscope or the like is becoming larger.
- the electrons emitted from the bottom of the structure are very important for knowing the bottom information, but some of the electrons emitted from the bottom (such as secondary electrons) collide with the side walls of the structure.
- the ideal optical axis beam Since the beam is irradiated to a position separated from the beam trajectory when the beam is not deflected, the focusing action of the objective lens acts to deflect the secondary electrons emitted from the sample.
- Patent Documents 1 to 3 do not disclose any technique for selectively detecting such electrons.
- a charged particle beam apparatus which aims to make information based on charged particles emitted from the bottom of a high aspect structure more obvious, regardless of the above-described deflection action.
- a charging device comprising: a deflector that deflects a charged particle beam emitted from a charged particle source; and a detector that detects a charged particle obtained by scanning the charged particle beam.
- a particle beam apparatus comprising: a first orthogonal electromagnetic field generator that deflects charged particles emitted from a sample; and a second that further deflects the charged particles deflected by the first orthogonal electromagnetic field generator.
- a charged particle beam apparatus comprising: an orthogonal electromagnetic field generator; an opening forming member having a passage opening for the charged particle beam; and a third orthogonal electromagnetic field generator for deflecting the charged particles that have passed through the opening forming member.
- a charged particle beam apparatus provided with an aberration corrector (for example, a fourth orthogonal electromagnetic field generator) on the charged particle source side from a third orthogonal electromagnetic field generator is proposed.
- an aberration corrector for example, a fourth orthogonal electromagnetic field generator
- the schematic block diagram of a scanning electron microscope The figure which shows an example of the scanning electron microscope which selectively detects the high angle electron among the electrons discharge
- the figure which shows an example of an aberration corrector The figure which shows an example of an aberration corrector.
- a circuit pattern having an aspect ratio of 10 or more is processed in a flash memory gate and an aspect ratio is 30 or more in a contact hole.
- CD-SEM Cross-sectional Electron Microscopy
- An ExB filter is an orthogonal electromagnetic field generator having, for example, an electrode that generates a deflection electric field for secondary electrons and a magnetic pole that generates a magnetic field orthogonal to the electric field. Since the deflection can be made in the direction opposite to the deflection direction, the deflection action of the deflection electric field on the electron beam can be canceled while maintaining the deflection action of the secondary electrons.
- ExB type filter is an extremely effective technology for realizing high spatial resolution with low acceleration.
- the detector collectively captures signal electrons emitted from the sample, the contrast of the image is uniquely determined by the acceleration voltage.
- the ExB filter shown above is effective for separating signal electrons, but it suppresses the energy dispersion of signal electrons generated by operating the filter and detects signal electrons from different emission positions at a constant incident angle. In order to lead to a vessel, it is necessary to provide a plurality of ExB type filters.
- the information on the bottom can be made more apparent as the difference in detection efficiency between the bottom and the sample surface is suppressed. Therefore, if there is a member that selectively allows high-angle electrons to pass therethrough and blocks low-angle electrons, the above object can be achieved.
- a first orthogonal electromagnetic field generator that deflects charged particles emitted from a sample, and a second that further deflects the charged particles deflected by the first orthogonal electromagnetic field generator.
- Charged particle beam apparatus comprising: an orthogonal electromagnetic field generator; an aperture forming member having a passage opening for the charged particle beam; and a third orthogonal electromagnetic field generator for deflecting the charged particles that have passed through the aperture forming member Will be described.
- Electrons emitted from other than the intersection of the ideal optical axis and the sample surface are deflected off-axis by the deflection action of the lens.
- the first orthogonal electromagnetic field generator deflects the charged particles toward the ideal optical axis
- the second orthogonal electromagnetic field generator is disposed closer to the charged particle source than the first orthogonal electromagnetic field generator.
- the trajectory of the charged particles deflected by the first orthogonal electromagnetic field generator is deflected so as to be parallel to the ideal optical axis.
- the opening forming member disposed on the charged particle source side from the second orthogonal electromagnetic field generator has a passage opening for the charged particle beam, it is deflected by the second orthogonal electromagnetic field generator to generate the ideal light.
- high-angle charged particles selectively pass through the passage opening. That is, since the high-angle electrons 901 and 903 illustrated in FIG. 9 selectively pass through, it is possible to form an image having a relatively bright bottom.
- the third orthogonal electromagnetic field generator deflects the charged particles that have passed through the opening forming member toward the detection surface of the detector or the conversion plate, thereby selecting the height selected by the angle discrimination. Angled charged particles can be detected with high efficiency.
- an aberration corrector for example, a fourth orthogonal electromagnetic field generator
- a plurality of orthogonal electromagnetic waves including the third orthogonal electromagnetic field generator are provided. It becomes possible to cancel the aberration generated by the field generator.
- the four-stage orthogonal electromagnetic field generator is provided, the lower two-stage orthogonal electromagnetic field generator is caused to perform orbital deflection for angle discrimination of charged particles, and the upper two-stage orthogonal electromagnetic field generator.
- the configuration that executes the deflection for detecting charged particles and the cancellation of the aberration generated by the lower quadrature electromagnetic field generator reveals information based on the charged particles emitted from the bottom of the hole, regardless of the irradiation position of the beam. In addition, it is possible to achieve both high resolution of the apparatus.
- a detector that mainly detects electrons obtained by irradiating a specimen with an electron beam, and an opening that is disposed between the detector and the deflector and has a passage opening for the electron beam.
- the aberration generated by the secondary signal deflector is arranged on the electron source side from the detector.
- a scanning electron microscope having a function of correcting with two ExB filters will be described.
- ExB type filters that control only the trajectory of signal electrons without disposing on the optical axis of the primary electron beam are arranged.
- Aberrations generated by these ExB filters are canceled by one ExB filter disposed on the detector.
- canceling out aberrations with one ExB filter placed on the detector can greatly reduce the space, and ExB that cancels out aberrations does not need to deflect signal electrons.
- a structured structure can be adopted.
- the trajectory of the signal electrons is mainly controlled by the ExB filter, and when passing through the signal electron limiting plate, the aberration generated by the ExB filter is canceled by one ExB filter disposed on the detector.
- FIG. 1 is a schematic configuration diagram of an SEM type semiconductor measuring device.
- the measuring apparatus is roughly divided into an SEM casing 1, a sample chamber 2, a casing control section 3, a signal processing section 4, a stage control section 5, a wafer transfer section 8, and a vacuum exhaust section 9, all of which are consoles. 6 can be controlled.
- the console 6 has a large-capacity storage medium 7 capable of storing recipes, measurement results, and acquired scanned images. Based on the data recorded on the storage medium 7, the console 6 operates and manages the data.
- the vacuum is maintained in the SEM casing 1 and the sample chamber 2 by the exhaust pump included in the vacuum exhaust section 9, and the vacuum exhaust section 9 is controlled from the console 6 according to the purpose, and the SEM casing 1 and the sample chamber 2 are controlled. 2.
- the sample preparation chamber 10 can be exhausted or leaked.
- the SEM housing 1 includes an electron source 11, an extraction electrode 12, an anode electrode 13, a condenser lens 14, an ExB filter a15, a conversion plate 16, a detector a17, an ExB filter b18, a signal electronic limiting plate 19, a detector b20, An ExB filter c21, an ExB filter d22, a deflector 23, an objective lens 24, and a height sensor 25 are included.
- the primary electron beam is extracted by the potential difference between the electron source 11 and the extraction electrode 12.
- the primary electron beam is converged by the condenser lens 14 so as to pass through a hole provided in the center of the conversion plate 16 and the signal electron limiting plate 19.
- the primary electron beam is converged on the sample 26 by the objective lens 24 after the trajectory is changed by the deflector 23 so as to scan a desired region on the sample 26 two-dimensionally.
- a voltage for decelerating the primary electron beam is applied to the sample 26 installed in the sample chamber 2 from a retarding power source in the housing control unit 3.
- the signal electrons emitted from the sample 26 are accelerated to energy corresponding to the voltage applied to the sample 26, pass through the objective lens 24 and the deflector 23, and collide with the signal electron limiting plate 19 and the conversion plate 16.
- This is supplemented by the detector b20 and the detector a17.
- the above is a general configuration of the SEM casing, but in this embodiment, since the two scanning images differing in the scanning direction by about 180 degrees are compared, the scanning signal needs to be accurately inverted between the two scanning images. There is.
- the sample chamber 2 includes a stage 27, an insulating material 28, a sample folder 29, and a mirror 30.
- the sample folder 29 and the grounded stage 27 are electrically insulated by an insulating material 28, and the sample 26 and the mirror 30 are electrically grounded to the sample folder 29.
- a high voltage can be applied to the sample folder 29 from the outside of the sample chamber 2 via a feedthrough.
- the stage 27 is driven two-dimensionally in a direction perpendicular to the central axis of the SEM housing 1 by the stage driving device 31 in the stage control unit 5, so that the entire region of the sample 26 can be moved to the central axis of the SEM housing 1. Can be moved directly underneath.
- the mirror 30 is attached to the sample folder 29 in order to measure the position of the sample 26, and the laser is measured from the laser length measuring device 32 in the stage control unit 5 through a glass window that partitions the vacuum of the sample chamber 2. Therefore, a laser image measuring device 32 measures the position of the sample 26, and a scanned image at a desired position can be obtained even with a semiconductor pattern in which fine patterns are integrated.
- the wafer transfer unit 8 includes a transfer control unit 33 and a transfer robot 34.
- the transfer control unit 33 controls the transfer robot 34 based on a control signal from the console 6, and transfers the sample 26 installed in the wafer transfer unit 8 to the sample preparation chamber 10.
- the sample 26 is transferred stepwise from the wafer transfer unit 8 to the sample preparation chamber 10 and the sample chamber 2, and a valve 35 is provided between each unit.
- the console 6 controls the valve 35 and the vacuum exhaust unit 9, and can automatically transport the sample 26 so that the vacuum in the sample chamber 2 can be maintained constantly even during the transport operation.
- the housing control unit 3 operates the electron source 11 and various lenses included in the SEM housing 1 based on a control signal sent from the console 6.
- the housing control unit 3 includes a housing control power source 36, an aberration correction power source 37, a signal electron trajectory control power source 38, a primary electron trajectory control power source 39, and a retarding power source 40.
- the housing control power supply 36 can supply a constant voltage or a constant current to the electron source 11, the condenser lens 14, and the objective lens 24, and can irradiate the primary electron beam converged on the sample 26.
- the primary electron trajectory control power supply 39 can supply a voltage or a current to the deflector 23 and scan the primary electron beam at a desired location on the sample 26.
- the operation of the retarding power supply 40 is described in the above (sample chamber and wafer transfer unit).
- the operation of the signal electron trajectory control power supply 38 will be described later in (Signal electron trajectory control method).
- the operation of the aberration correction power source 37 will be described later in (Aberration correction control method).
- the signal processing unit 4 forms a scanned image of the sample 26 based on a control signal sent from the console 6.
- the signal processing unit 4 includes an image memory 42, an image processing unit 43, and a signal processing unit 44.
- the console 6 sends a scanning signal to the primary electron trajectory control power source 39 to form a scanning image, and the signal processing unit 4 samples the signals detected by the detector a17 and the detector b20 in synchronization with the scanning signal.
- the signals detected by the respective detectors are independently amplified and converted into digital signals by a level adjusting circuit 41 provided individually, and then stored in the memory 42 in the signal processing unit 4.
- the purpose of individually providing the level adjustment circuit 41 is to realize optimum signal amplification even when the signal amount is greatly different between the detector a17 and the detector b20.
- Each scanned image stored in the memory 42 is subjected to arithmetic processing such as addition and subtraction in the image processing unit 43 and is sent to the signal processing unit 44.
- the signal processing unit 44 outputs a signal waveform (line profile) of a predetermined region from the scanned image that has been subjected to arithmetic processing, and extracts information related to the shape of the sample from the waveform.
- the signal processing unit 44 can output not only the scanning image obtained by the arithmetic processing but also the scanning waveform acquired by each detector independently, and can output information on the shape. As described above, by providing a function of appropriately combining the scanned images obtained by the respective detectors, it is possible to measure a desired region with high accuracy.
- FIGS. 2 and 3 are excerpts of a part of the SEM housing 1 in the schematic configuration diagram of the SEM type semiconductor measuring device.
- FIG. 2 shows the principle of angle discrimination of signal electrons by the signal electron limiting plate 19, and the signal electrons emitted from the sample 26 move from the sample 26 toward the objective lens 24 along the central axis 100 of the SEM housing 1. proceed.
- the signal electron restricting plate 19 is an opening forming member having an electron beam passage opening, and the signal electrons 111 emitted at a large elevation angle collide with the signal electron restricting plate 19 to detect the generated tertiary electrons 120 as a detector. b20 captures.
- the signal electrons 110 emitted at a small elevation angle pass through the signal electron limiting plate 19, are bent by the ExB filter b 18, collide with the conversion plate 16, and the generated tertiary electrons are captured by the detector a 17.
- the signal electron capturing elevation angle can be limited by the size of the opening of the signal electron limiting plate 19.
- the signal electrons 110 emitted at a small elevation angle and the signal electrons 111 emitted at a large elevation angle are independently detected, and the level adjustment circuit 41 at the subsequent stage performs amplification suitable for each signal amount, thereby allowing the three-dimensional structure of the sample to be determined. It can be visualized more clearly.
- FIG. 3 shows a case where the emission position of the signal electrons is deviated from the central axis 100 of the SEM casing in the configuration of FIG. 2, and when the primary electron beam is deflected by the deflector 23, the signal electrons are centered on the central axis. Draw a trajectory far from 100.
- FIG. 3A shows a case where only the deflector 23 is operated. The central trajectory 101 of the signal electrons emitted off the central axis 100 is the convergence field of the objective lens 24 and the deflection of the deflector 23. The orbit is bent in the field. Then, most of the signal electrons collide with the signal electron limiting plate 19 and are captured by the detector b20. In this case, since the signal electrons collide at a position far away from the opening of the signal electron limiting plate 19, the function of limiting the angle by the opening is not utilized.
- FIG. 3B shows a case where the ExB type filter c21 and the ExB type filter d22 are interlocked as signal electron trajectory control in the case of (a).
- both the ExB filter c21 and the ExB filter d22 are adjusted in strength of electric field and magnetic field so as not to change the trajectory of the primary electron beam, the emission position of the signal electrons is shown in FIG. And no different.
- the trajectory of the signal electrons bent in the field of the objective lens 24 and the deflector 23 is such that the central trajectory 101 of the signal electrons is perpendicular to the signal electron limiting plate 19 and the optical system Since the two ExB filters are adjusted so as to overlap with the central axis 100, the same angle discrimination function as in FIG. 2 can be exhibited.
- ExB type filters As described above, by arranging ExB type filters in multiple stages and interlocking with the deflection signal, it becomes possible to discriminate the emission angle of the signal electrons with high accuracy even when the primary electron beam is deflected.
- Control method for aberration correction The influence of the aberration exerted by the ExB filter on the primary electron beam is chromatic aberration caused by the difference in the deflection action between the electric field and the magnetic field, and produces blur in the deflection direction.
- the size of this blur is determined by the amount of movement of the ExB filter and the distance to the crossover of the primary electron beam, and the amount of blur increases as the amount of movement increases and the distance to the crossover increases.
- FIG. 4 and 5 show a method of canceling out the aberration generated by the ExB filters arranged in multiple stages with one ExB filter.
- FIG. 4 shows a crossover 102 between the operating multistage ExB filters.
- FIG. 5 shows the case where there is a crossover 102 between the operating multi-stage ExB filters.
- Each drawing shows an excerpt in the vicinity of the ExB type filter of the SEM housing 1 in the schematic configuration diagram of the SEM type semiconductor measuring device, the control power supply related thereto, and the processing of the console 6.
- the primary electron beam passes through the openings of the conversion plate 16 and the signal electron limiting plate 19, and forms a crossover under the ExB filter d22.
- the amount of operation of each ExB filter that controls the trajectory of the signal electrons is as follows: ExV filter b18 is (Vxb, Vyb), ExB filter c21 is (Vxc, Vyc), and ExB filter d22 is (Vxd, Vyd).
- ExV filter b18 is (Vxb, Vyb)
- ExB filter c21 is (Vxc, Vyc)
- ExB filter d22 is (Vxd, Vyd).
- the distance from each ExB type filter to the crossover 102 is L2, L3, and L4
- the magnitude of chromatic aberration generated by each ExB type filter is proportional to the following equation.
- the above equation is normalized by the distance L1 from the ExB type filter a15 used for correction to the crossover 102, and added to synthesize the chromatic aberration of the ExB type filter from b to d.
- (DVx, dVy) in the above equation is a combination of chromatic aberration generated by d from the ExB filter b, and chromatic aberration generated by operating the ExB filter a15 in the opposite polarity to (dVx, dVy) as shown in the following equation. Can be countered.
- the formulas so far have been described focusing on the operating voltage of electrostatic deflection of the ExB type filter.
- the operation amount of another electromagnetic deflection constituting the ExB filter that has been omitted above it is necessary to determine the operation amount so as to satisfy the Wien condition that does not change the trajectory of the primary electron beam.
- the Wien condition can be determined by determining the electrostatic deflection voltage and the electromagnetic deflection current so that the field of view of the scanned image does not move, or by adjusting the electrostatic deflection so that the optical axis does not deviate from the current center axis of the objective lens.
- the voltage and current of electromagnetic deflection may be determined.
- the present embodiment can be effective only when all ExB deflectors operate to satisfy the Wien condition.
- signal electrons can be discriminated with a high degree of freedom and high accuracy in addition to high spatial resolution.
- the aberration generated by the multi-stage ExB filter is corrected by one ExB filter disposed on the detector.
- the ExB filter can be optimized by specializing in aberration correction.
- Astigmatism occurs due to insufficient assembly accuracy of the electrostatic deflector and electromagnetic deflector and the passage of the primary electron beam away from the center of the ExB filter.
- FIG. 6 shows a schematic configuration of an ExB filter for correcting aberration, where (a) shows wiring for electrostatic deflection and (b) shows wiring for electromagnetic deflection. Actually, (a) and (b) should be drawn overlappingly, but for convenience, electrostatic deflection and electromagnetic deflection are shown separately in the figure. Here, correction of astigmatism generated by the ExB filter will be described.
- the ExB type filter shown in FIG. 6 combines an XY electromagnetic deflector 46 with an electrostatic octupole type electrostatic deflector 45.
- the electrostatic deflector 45 is connected to a voltage control circuit 48 in the aberration correction power source 37, and deflects by applying a predetermined voltage from the voltage control circuit 48 to each deflection electrode based on a control signal from the console 6. Field can be generated.
- the electromagnetic deflector 46 is connected to a current control circuit 47 of the aberration correction power source 37. Based on a control signal from the console 6, the electromagnetic deflector 46 deflects by flowing a predetermined current from the current control circuit 47 to each deflection coil. Field can be generated.
- each correction component can be superimposed by adding the voltage of each correction component to the chromatic aberration correction voltage previously shown in the voltage control circuit 48 based on the control signal from the console 6.
- optical axis misalignment due to the superimposition of the correction function may be a problem.
- This optical axis deviation is a phenomenon that occurs because the primary electron beam is deflected by the electrostatic field when the primary electron beam does not pass through the center of the electrostatic field that corrects astigmatism.
- the ExB filter does not operate so as to satisfy the Wien condition described above, even if astigmatism can be corrected, off-axis aberration that occurs due to not passing through the central axis of the objective lens 24 occurs.
- astigmatism returns an optical axis shift due to correction, and therefore the aligner is linked to correction of astigmatism.
- This aligner may be electrostatic deflection or electromagnetic deflection, and the aligner may be interlocked so that the field of view of the scanned image does not move by the astigmatism correction operation (hereinafter, this interlock is referred to as stigma alignment).
- this stigma alignment is superimposed on the electromagnetic deflection of the ExB filter.
- the stigma alignment can be superimposed by adding the stigma alignment current to the current determined by the current control circuit 47 based on the Wien condition described above based on the control signal from the console 6.
- FIG. 6 the operation of the present embodiment has been described by taking an ExB type filter combining an 8-pole electrostatic deflector and XY electromagnetic deflection as an example.
- this operation can also be realized with a 12-pole or 4-pole electrostatic deflector.
- the above-described operation is realized by setting the electromagnetic deflector to 8 poles and winding the aligner coil on the astigmatism correction coil. can do.
- the aberration generated by a plurality of ExB filters that control the trajectory of signal electrons is corrected by a single ExB filter arranged on the detector.
- the advantage of using this configuration is that it is not necessary to mount an ExB type filter for correcting aberration in a pair with respect to the ExB type filter that deflects signal electrons, and a significant space saving can be realized.
- the ExB filter can be optimized for aberration correction.
- FIG. 7 shows a schematic configuration when a four-pole electrostatic deflector is used.
- the electromagnetic deflector has eight poles as described above, and an aligner coil is superimposed on an astigmatism correction coil. It is rolled up.
- 7A shows the wiring for electrostatic deflection
- FIG. 7B shows the wiring for electromagnetic deflection
- FIG. 7C shows the wiring for astigmatism correction.
- (a), (b), and (c) should be drawn in an overlapping manner, but they are shown separately for convenience.
- the electrostatic deflector 45 and the electromagnetic deflector 46 are separated by a vacuum partition wall 49.
- the electrostatic deflector 45 is disposed in the vacuum and the electromagnetic deflector 46 is disposed in the atmosphere.
- the electromagnetic deflector 46 that generates heat by operation is not disposed in the vacuum, so that the vacuum does not deteriorate.
- the configuration of the ExB filter is an example of an optimum configuration that can be realized for the first time by specializing in aberration correction and reducing the inner diameter of the electrostatic deflector 45.
- a voltage control circuit 48 in the aberration correction power source 37 is connected to the electrostatic deflector 45 in FIG. 7A.
- a predetermined voltage is applied from the voltage control circuit 48 to each deflection electrode.
- a deflection field can be generated by applying a voltage.
- a current control circuit 47 of the aberration correction power source 37 is connected to the aligner coil 50 wound around the electromagnetic deflector 46 in FIG. 7B, and each current control circuit 47 controls the current control circuit 47 based on a control signal from the console 6.
- a deflection field can be generated by passing a predetermined current through the deflection coil.
- the astigmatism correction coil 51 wound around the electromagnetic deflector 46 in FIG. 7C is connected to the astigmatism correction current control circuit 52 of the aberration correction power source 37, and the control signal from the console 6 is received. Based on this, a field for correcting astigmatism can be generated by causing a predetermined current to flow from the astigmatism correction current control circuit 52 to each coil.
- the ExB filter for correcting aberration described in this embodiment When the ExB filter for correcting aberration described in this embodiment is disposed at a position where signal electrons pass, the orbit of the signal electrons is deflected by the correction operation of chromatic aberration and the correction operation of astigmatism. The effect described in the electron trajectory control method) cannot be exhibited.
- an ExB filter for aberration correction By disposing an ExB filter for aberration correction on the detector, it becomes possible to discriminate signal electrons with a high degree of freedom and high accuracy in addition to high spatial resolution, which is the object of the present invention for the first time.
- FIG. 8 is a diagram showing an example of a scanning electron microscope equipped with microchannel plates 801 and 802 that amplify and detect electrons emitted from a sample as detectors.
- the microchannel plate 802 is an opening forming member having an electron beam passage opening.
- a signal detected by the microchannel plate 802 is amplified by an amplifier 804 and stored as an image signal or signal waveform information in an image memory provided in the control device 805.
- the high-angle electrons that have passed through the microchannel plate 802 are deflected off-axis by the ExB filter b18 and are captured by the microchannel plate 801.
- the signal detected by the microchannel plate 801 is amplified by the amplifier 803 and stored in the image memory.
- the image signal stored in the image memory can be displayed on the display device 806, and the control device 805 adjusts the amplification factors of the outputs of the upper detector and the lower detector to form a composite image. It also becomes an arithmetic unit.
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
SEM筐体1は、電子源11、引出電極12、アノード電極13、コンデンサレンズ14、ExB形フィルタa15、変換板16、検出器a17、ExB形フィルタb18、信号電子制限板19、検出器b20、ExB形フィルタc21、ExB形フィルタd22、偏向器23、対物レンズ24、高さセンサ25で構成される。SEM筺体1では、電子源11と引出電極12との間の電位差で1次電子線を引き出す。1次電子線は、変換板16並びに信号電子制限板19の中央に設けられた穴を通過するようコンデンサレンズ14で収束させられる。
試料室2はステージ27、絶縁材28、試料フォルダ29、ミラー30で構成される。試料フォルダ29と接地されたステージ27とは、絶縁材28で電気的に絶縁されており、試料26、ミラー30は、試料フォルダ29に対し電気的に接地されている。試料フォルダ29には試料室2の外部からフィードスルーを介し高電圧を印加することができる。また、ステージ制御部5内のステージ駆動装置31により、ステージ27はSEM筐体1の中心軸に対し垂直方向に2次元的に駆動することで、試料26全ての領域をSEM筺体1の中心軸の直下に移動させることができる。なお、ミラー30は試料26の位置を計測するため、試料フォルダ29に取り付けられており、ステージ制御部5内にあるレーザ測長装置32から試料室2の真空を隔壁するガラス窓を介してレーザが照射できる構成となっており、レーザ測長装置32で試料26の位置を計測することで、微細なパターンが集積された半導体パターンでも、所望の位置の走査像を得ることができる。
筐体制御部3は、コンソール6から送られる制御信号に基づき、SEM筐体1に含まれる電子源11や各種レンズを動作させる。筺体制御部3には、筺体制御電源36、収差補正電源37、信号電子軌道制御電源38、1次電子軌道制御電源39、リターディング電源40で構成される。筺体制御電源36は、電子源11、コンデンサレンズ14、並びに対物レンズ24に定電圧または定電流を供給し、試料26に収束した1次電子線を照射することができる。1次電子軌道制御電源39は、偏向器23に電圧または電流を供給し、試料26の所望の箇所に1次電子線を走査することができる。リターディング電源40の動作については、前述の(試料室、並びにウェーハ搬送部)に記載。信号電子軌道制御電源38の動作については、後述の(信号電子の軌道制御方法)に記載。収差補正電源37の動作については、後述の(収差補正の制御方法)に記載。
信号処理部4は、コンソール6から送られる制御信号に基づき、試料26の走査像を形成する。信号処理部4は、画像メモリ42、画像処理部43、信号処理部44で構成される。コンソール6は、走査像を形成するため1次電子軌道制御電源39に走査信号を送り、信号処理部4は検出器a17、並びに検出器b20で検出した信号を走査信号に同期してサンプリングする。各々の検出器で検出された信号は、個別に設けられたレベル調整回路41で独立に増幅されデジタル信号に変換されてから、信号処理部4内のメモリ42に格納される。
次に信号電子の軌道制御について図2並びに図3を用いて説明する。図2、並びに図3は、SEM式半導体計測装置の概略構成図の中のSEM筺体1の一部を抜粋したものである。図2は、信号電子制限板19による信号電子の角度弁別の原理を示しており、試料26から放出された信号電子はSEM筺体1の中心軸100に沿って試料26から対物レンズ24の方へ進行する。信号電子制限板19は、電子ビーム通過開口を備えた開口部形成部材であり、大きな仰角で放出された信号電子111は、信号電子制限板19に衝突し、発生した3次電子120を検出器b20が捕捉する。一方、小さな仰角で放出された信号電子110は、信号電子制限板19を通過しExB形フィルタb18で曲げられ変換板16に衝突し、発生した3次電子を検出器a17が捕捉する。以上のように、信号電子の放出角度を弁別して検出する技術では、信号電子制限板19の開口の大きさで信号電子の取り込み仰角を制限することができる。小さな仰角で放出された信号電子110と大きな仰角で放出された信号電子111を独立に検出し、後段のレベル調整回路41が各々の信号量に適した増幅をすることで、試料の立体構造をより鮮明に可視化することができる。
1次電子線に対しExB形フィルタが及ぼす収差の影響は、電場と磁場の偏向作用の違いに起因した色収差であり、偏向方向にボケを生みだす。このボケの大きさは、ExB形フィルタの動作量と1次電子線のクロスオーバまでの距離で決まり、動作量が大きく、且つクロスオーバまでの距離が長いほどボケは大きくなる。この色収差を打ち消すためには、別のExB形フィルタで逆方向のボケを発生させる必要があり、ExB形フィルタの動作量とクロスオーバまでの距離の積が、各々のExB形フィルタで正負反転するよう調整することで色収差を打ち消すことができる。
本実施例では、多段のExB形フィルタが発生する収差を検出器の上に配置した1つのExB形フィルタで補正する。この構成を用いることで、信号電子を偏向するExB形フィルタに対し、1対で収差補正用のExB形フィルタを搭載する必要がなくなり、大幅なスペース削減を実現できる。また、検出器の上に補正用のExB形フィルタを配置することから、そのExB形フィルタを収差補正に特化して最適化することができる。前述の(収差補正の制御方法)では、ExB形フィルタが発生する色収差のみに着目して説明したが、非点収差に対しても積極的に補正をすることができる。非点収差は、静電偏向器や電磁偏向器の組み立て精度の不足や、1次電子線がExB形フィルタの中心から離軸して通過することが原因で発生する。
2 試料室
3 筐体制御部
4、44 信号処理部
5 ステージ制御部
6 コンソール
7 ストレージ媒体
8 ウェーハ搬送部
9 真空排気部
10 試料準備室
11 電子源
12 引出電極
13 アノード電極
14 コンデンサレンズ
15 ExB形フィルタa
16 変換板
17 検出器a
18 ExB形フィルタb
19 信号電子制限板
20 検出器b
21 ExB形フィルタc
22 ExB形フィルタd
23 偏向器
24 対物レンズ
25 高さセンサ
26 試料
27 ステージ
28 絶縁材
29 試料フォルダ
30 ミラー
31 ステージ駆動装置
32 レーザ測長装置
33 搬送制御部
34 搬送ロボット
35 バルブ
36 筺体制御電源
37 収差補正電源
38 信号電子軌道制御電源
39 1次電子軌道制御電源
40 リターディング電源
41 レベル調整回路
42 メモリ
43 画像処理部
45 静電偏向器
46 電磁偏向器
47 電流制御回路
48 電圧制御回路
49 真空隔壁
50 アライナコイル
51 非点補正コイル
52 非点補正用電流制御回路
100 中心軸
101 信号電子の中心軌道
102 クロスオーバ
105 非点収差のX方向補正成分
106 非点収差のY方向補正成分
110、111 信号電子
120 3次電子
Claims (17)
- 荷電粒子源から放出される荷電粒子ビームを偏向する偏向器と、前記荷電粒子ビームの走査によって得られる荷電粒子を検出する検出器を備えた荷電粒子線装置において、
試料から放出された荷電粒子を偏向する第1の直交電磁界発生器と、当該第1の直交電磁界発生器によって偏向された前記荷電粒子を更に偏向する第2の直交電磁界発生器と、前記荷電粒子ビームの通過開口を有する開口形成部材と、当該開口形成部材を通過した前記荷電粒子を偏向する第3の直交電磁界発生器を備えたことを特徴とする荷電粒子線装置。 - 請求項1において、
前記開口部形成部材は、前記試料から放出される荷電粒子の衝突によって二次電子を発生させる変換板であることを特徴とする荷電粒子線装置。 - 請求項2において、
前記検出器は、前記変換板から放出される電子を検出することを特徴とする荷電粒子線装置。 - 請求項1において、
前記開口部形成部材は、前記試料から放出される荷電粒子を検出する検出器であることを特徴とする荷電粒子線装置。 - 請求項1において、
前記第3の直交電磁界発生器より前記荷電粒子源側に、収差補正器を配置したことを特徴とする荷電粒子線装置。 - 請求項5において、
前記収差補正器は、第4の直交電磁界発生器であって、前記第1の収差補正器、第2の収差補正器、及び第3の収差補正器が生じさせる収差を相殺するように制御されることを特徴とする荷電粒子線装置。 - 請求項1において、
前記第1の直交電磁界発生器と前記第2の直交電磁界発生器は、前記偏向器による前記荷電粒子線の偏向状態に応じて、前記試料から放出される荷電粒子に対する偏向状態を変化させることを特徴とする荷電粒子線装置。 - 請求項7において、
前記第1の直交電磁界発生器と第2の直交電磁界発生器は、前記試料から放出される荷電粒子の軌道が、前記荷電粒子ビームの理想光軸と平行となるように、当該荷電粒子を偏向することを特徴とする荷電粒子線装置。 - 荷電粒子源と、前記荷電粒子源から放出される荷電粒子ビームの照射位置を偏向する偏向器と、前記荷電粒子ビームの試料への照射によって得られる二次信号を検出する第1の検出器と、前記第1の検出器と前記偏向器との間に、前記荷電粒子ビームの通過開口を有する開口形成部材を配置し、前記通過開口に向かって前記二次信号を偏向する2つ以上の二次信号偏向器を備えた荷電粒子線装置において、
前記2つ以上の二次信号偏向器によってもたらされる前記荷電粒子ビームの収差を、前記第1の検出器より前記荷電粒子源方向に配置した1つの収差補正器で補正することを特徴とする荷電粒子線装置。 - 請求項9において、
前記2つ以上の二次信号偏向器、並びに前記1つの収差補正器が静電場と静磁場を重畳させた偏向器であることを特徴とする荷電粒子線装置。 - 請求項9において、
前記2つ以上の二次信号偏向器、並びに前記1つの収差補正器が静電場と静磁場を重畳させた偏向器であり、且つ静電場と静磁場が荷電粒子ビームを偏向せず、前記二次信号のみ偏向することを特徴とする荷電粒子線装置。 - 請求項9において、
前記荷電粒子ビームが形成するクロスオーバの距離と、前記二次信号偏向器の動作量に応じて、前記収差補正器の動作量を設定することを特徴とする荷電粒子線装置。 - 請求項9において、
前記収差補正器が補正する収差が、前記2つ以上の二次信号偏向器の発生する色収差であることを特徴とする荷電粒子線装置。 - 請求項9において、
前記収差補正器が補正する収差が、前記2つ以上の二次信号偏向器の発生する非点収差であり、且つ前記非点収差の補正で前記荷電粒子ビームが偏向されないよう、前記荷電粒子ビームの軌道を校正する機能を備えていることを特徴とする荷電粒子線装置。 - 請求項9において、
前記開口形成部材と前記第1の検出器の間にエネルギーフィルタを備えていることを特徴とする荷電粒子線装置。 - 請求項9において、
前記開口形成部材より前記試料側に第2の検出器を備えていることを特徴とする荷電粒子線装置。 - 請求項9において、
前記第1の検出器と第2の検出器の信号を用いて前記試料の形状を計測することを特徴とする荷電粒子線装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/410,999 US9627171B2 (en) | 2012-06-28 | 2013-06-10 | Charged particle beam device |
KR1020147031484A KR101759186B1 (ko) | 2012-06-28 | 2013-06-10 | 하전 입자선 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-144901 | 2012-06-28 | ||
JP2012144901A JP6002470B2 (ja) | 2012-06-28 | 2012-06-28 | 荷電粒子線装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014002734A1 true WO2014002734A1 (ja) | 2014-01-03 |
Family
ID=49782899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/065910 WO2014002734A1 (ja) | 2012-06-28 | 2013-06-10 | 荷電粒子線装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9627171B2 (ja) |
JP (1) | JP6002470B2 (ja) |
KR (1) | KR101759186B1 (ja) |
WO (1) | WO2014002734A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018160695A (ja) * | 2014-01-10 | 2018-10-11 | 三菱電機株式会社 | 電子ビーム加工機 |
TWI753374B (zh) * | 2019-03-08 | 2022-01-21 | 日商日立全球先端科技股份有限公司 | 荷電粒子束裝置 |
JP2022525905A (ja) * | 2019-03-27 | 2022-05-20 | エーエスエムエル ネザーランズ ビー.ブイ. | マルチビーム検査装置における二次ビームのアライメントのためのシステム及び方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9330884B1 (en) * | 2014-11-11 | 2016-05-03 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Dome detection for charged particle beam device |
KR101693536B1 (ko) * | 2015-11-23 | 2017-01-06 | 한국표준과학연구원 | 하전입자선 장치 |
WO2017168709A1 (ja) * | 2016-03-31 | 2017-10-05 | 株式会社日立製作所 | 荷電粒子線応用装置 |
US11451043B1 (en) | 2016-10-27 | 2022-09-20 | State Farm Mutual Automobile Insurance Company | Systems and methods for utilizing electricity monitoring devices to mitigate or prevent structural damage |
KR102288146B1 (ko) | 2017-03-06 | 2021-08-11 | 주식회사 히타치하이테크 | 하전입자선 장치 |
KR20200020921A (ko) * | 2017-07-28 | 2020-02-26 | 에이에스엠엘 네델란즈 비.브이. | 단일-빔 또는 멀티-빔 장치에서의 빔 분리기의 분산을 보상하기 위한 시스템들 및 방법들 |
JP6932050B2 (ja) * | 2017-09-01 | 2021-09-08 | 株式会社日立ハイテク | 走査電子顕微鏡 |
KR102608530B1 (ko) * | 2019-04-19 | 2023-12-04 | 주식회사 히타치하이테크 | 하전 입자선 장치 |
WO2023139631A1 (ja) * | 2022-01-18 | 2023-07-27 | 株式会社日立ハイテク | 荷電粒子線装置及び荷電粒子線装置におけるビームの偏向方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10302705A (ja) * | 1997-04-25 | 1998-11-13 | Hitachi Ltd | 走査電子顕微鏡 |
JP2002367552A (ja) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | 荷電粒子線装置 |
JP2004342341A (ja) * | 2003-05-13 | 2004-12-02 | Hitachi High-Technologies Corp | ミラー電子顕微鏡及びそれを用いたパターン欠陥検査装置 |
JP2006332038A (ja) * | 2005-04-28 | 2006-12-07 | Hitachi High-Technologies Corp | 荷電粒子ビームを用いた検査方法及び検査装置 |
JP2012003902A (ja) * | 2010-06-15 | 2012-01-05 | Hitachi High-Technologies Corp | 走査型電子顕微鏡及びその制御方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2821153B2 (ja) * | 1988-11-24 | 1998-11-05 | 株式会社日立製作所 | 荷電粒子線応用装置 |
WO2001033603A1 (fr) | 1999-10-29 | 2001-05-10 | Hitachi, Ltd. | Appareil a faisceau electronique |
DE10236738B9 (de) | 2002-08-09 | 2010-07-15 | Carl Zeiss Nts Gmbh | Elektronenmikroskopiesystem und Elektronenmikroskopieverfahren |
EP1517353B1 (en) * | 2003-09-11 | 2008-06-25 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam energy width reduction system for charged particle beam system |
US7462828B2 (en) | 2005-04-28 | 2008-12-09 | Hitachi High-Technologies Corporation | Inspection method and inspection system using charged particle beam |
US8067732B2 (en) * | 2005-07-26 | 2011-11-29 | Ebara Corporation | Electron beam apparatus |
JP4825530B2 (ja) * | 2006-02-06 | 2011-11-30 | 株式会社日立ハイテクノロジーズ | パターン欠陥検査方法および装置 |
JP4881661B2 (ja) * | 2006-06-20 | 2012-02-22 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
JP4920385B2 (ja) * | 2006-11-29 | 2012-04-18 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム装置、走査型電子顕微鏡、及び試料観察方法 |
JP4977509B2 (ja) * | 2007-03-26 | 2012-07-18 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
JP5502595B2 (ja) * | 2010-05-18 | 2014-05-28 | 日本電子株式会社 | 球面収差補正装置および球面収差補正方法 |
JP5548159B2 (ja) * | 2010-11-05 | 2014-07-16 | 株式会社アドバンテスト | 欠陥レビュー装置及び欠陥レビュー方法 |
US20130292568A1 (en) * | 2010-12-16 | 2013-11-07 | Daisuke Bizen | Scanning electron microscope and length measuring method using the same |
-
2012
- 2012-06-28 JP JP2012144901A patent/JP6002470B2/ja active Active
-
2013
- 2013-06-10 KR KR1020147031484A patent/KR101759186B1/ko active IP Right Grant
- 2013-06-10 US US14/410,999 patent/US9627171B2/en active Active
- 2013-06-10 WO PCT/JP2013/065910 patent/WO2014002734A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10302705A (ja) * | 1997-04-25 | 1998-11-13 | Hitachi Ltd | 走査電子顕微鏡 |
JP2002367552A (ja) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | 荷電粒子線装置 |
JP2004342341A (ja) * | 2003-05-13 | 2004-12-02 | Hitachi High-Technologies Corp | ミラー電子顕微鏡及びそれを用いたパターン欠陥検査装置 |
JP2006332038A (ja) * | 2005-04-28 | 2006-12-07 | Hitachi High-Technologies Corp | 荷電粒子ビームを用いた検査方法及び検査装置 |
JP2012003902A (ja) * | 2010-06-15 | 2012-01-05 | Hitachi High-Technologies Corp | 走査型電子顕微鏡及びその制御方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018160695A (ja) * | 2014-01-10 | 2018-10-11 | 三菱電機株式会社 | 電子ビーム加工機 |
TWI753374B (zh) * | 2019-03-08 | 2022-01-21 | 日商日立全球先端科技股份有限公司 | 荷電粒子束裝置 |
JP2022525905A (ja) * | 2019-03-27 | 2022-05-20 | エーエスエムエル ネザーランズ ビー.ブイ. | マルチビーム検査装置における二次ビームのアライメントのためのシステム及び方法 |
JP7265646B2 (ja) | 2019-03-27 | 2023-04-26 | エーエスエムエル ネザーランズ ビー.ブイ. | マルチビーム検査装置における二次ビームのアライメントのためのシステム及び方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101759186B1 (ko) | 2017-07-18 |
KR20150001809A (ko) | 2015-01-06 |
JP6002470B2 (ja) | 2016-10-05 |
US9627171B2 (en) | 2017-04-18 |
JP2014010928A (ja) | 2014-01-20 |
US20150357153A1 (en) | 2015-12-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6002470B2 (ja) | 荷電粒子線装置 | |
US10522327B2 (en) | Method of operating a charged particle beam specimen inspection system | |
JP6641011B2 (ja) | 複数の荷電粒子ビームの装置 | |
KR100885940B1 (ko) | 하전입자선에 의한 검사장치 및 그 검사장치를 사용한장치제조방법 | |
US9601302B2 (en) | Inspection apparatus | |
US8378299B2 (en) | Twin beam charged particle column and method of operating thereof | |
US9035249B1 (en) | Multi-beam system for high throughput EBI | |
US7157703B2 (en) | Electron beam system | |
KR102145469B1 (ko) | 검사 장치 | |
TWI417928B (zh) | 電子線裝置、電子線檢查裝置及曝光條件決定方法 | |
JP5948084B2 (ja) | 走査電子顕微鏡 | |
WO2016125864A1 (ja) | 検査装置 | |
US8759761B2 (en) | Charged corpuscular particle beam irradiating method, and charged corpuscular particle beam apparatus | |
JPH11238484A (ja) | 投射方式の荷電粒子顕微鏡および基板検査システム | |
US20150228452A1 (en) | Secondary electron optics and detection device | |
JP5519421B2 (ja) | 走査型電子顕微鏡及びその制御方法 | |
JP2004342341A (ja) | ミラー電子顕微鏡及びそれを用いたパターン欠陥検査装置 | |
JP7278983B2 (ja) | マルチビーム走査透過荷電粒子顕微鏡 | |
JP2012230919A (ja) | 荷電粒子線の照射方法及び荷電粒子線装置 | |
JP2008193119A (ja) | 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法 | |
JP2007048754A (ja) | 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法 | |
JP2007184283A (ja) | 荷電粒子線装置及び方法 | |
JP4505674B2 (ja) | パターン検査方法 | |
JP4110042B2 (ja) | 基板検査装置、基板検査方法および半導体装置の製造方法 | |
JP4011608B2 (ja) | 荷電粒子ビーム光学装置、及び荷電粒子ビーム制御方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13808769 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20147031484 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14410999 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13808769 Country of ref document: EP Kind code of ref document: A1 |