WO2013190742A1 - Dispositif à semi-conducteurs et procédé de programmation - Google Patents

Dispositif à semi-conducteurs et procédé de programmation Download PDF

Info

Publication number
WO2013190742A1
WO2013190742A1 PCT/JP2013/001210 JP2013001210W WO2013190742A1 WO 2013190742 A1 WO2013190742 A1 WO 2013190742A1 JP 2013001210 W JP2013001210 W JP 2013001210W WO 2013190742 A1 WO2013190742 A1 WO 2013190742A1
Authority
WO
WIPO (PCT)
Prior art keywords
resistance change
terminal
wiring
change switch
state
Prior art date
Application number
PCT/JP2013/001210
Other languages
English (en)
Japanese (ja)
Inventor
阪本 利司
宗弘 多田
信 宮村
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP2014521209A priority Critical patent/JP6094582B2/ja
Publication of WO2013190742A1 publication Critical patent/WO2013190742A1/fr

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021Auxiliary circuits
    • G11C13/003Cell access
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021Auxiliary circuits
    • G11C13/0069Writing or programming circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021Auxiliary circuits
    • G11C13/0069Writing or programming circuits or methods
    • G11C2013/0073Write using bi-directional cell biasing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10Resistive cells; Technology aspects
    • G11C2213/15Current-voltage curve
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70Resistive array aspects
    • G11C2213/75Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70Resistive array aspects
    • G11C2213/79Array wherein the access device being a transistor

Definitions

  • the present invention relates to a semiconductor device and a programming method thereof, and more particularly to a semiconductor device having a variable resistance nonvolatile element (hereinafter referred to as a “resistance change switch”) and a programming method thereof.
  • a semiconductor device having a variable resistance nonvolatile element (hereinafter referred to as a “resistance change switch”) and a programming method thereof.
  • LSIs Large Scale Integration
  • development costs have risend with miniaturization and initial investment has become high.
  • the development cost includes an original plate (reticle) cost for manufacturing an LSI, a design cost, a manufacturing cost, a re-spin cost when there is a bug, and the like. Since general-purpose products such as processors and memories are produced in large quantities, it is easy to recover initial costs. However, it is not easy to recover the initial cost in a custom LSI that is designed according to customer specifications and does not have many shipments.
  • FPGA Field-Programmable Gate Array
  • the FPGA is equipped with a logic circuit that can be rewritten after manufacture, and becomes an LSI capable of realizing a function that satisfies customer requirements by programming.
  • a combination of SRAM (Static Random Access Memory) and a transistor is used for switching the circuit, and a highly integrated and highly reliable switch is realized without using a special manufacturing process.
  • SRAM Static Random Access Memory
  • a transistor is used for switching the circuit, and a highly integrated and highly reliable switch is realized without using a special manufacturing process.
  • problems such as a minute current flowing when information is held, volatility, and a large switch area. For this reason, the chip area is larger than that of the custom LSI, and the cost of the chip is high as a price for reducing the initial investment cost.
  • the operating speed decreases and the power consumption increases.
  • Non-Patent Document 1 it has been demonstrated that the area and power consumption of an FPGA can be reduced to one third by using a resistance change switch.
  • Fig. 1A shows the current characteristics of the resistance change switch.
  • the resistance change switch 10 basically has a structure including the first electrode 101, the resistance change layer 103 (insulator), and the second electrode 102 (FIG. 1B).
  • the resistance change switch 10 can transition between a low resistance state (ON state) and a high resistance state (OFF state) by applying a voltage.
  • the resistance change switch 10 when a positive voltage is applied to the first electrode 101, the resistance change switch 10 is set from the OFF state to the ON state using a desired set voltage as a threshold voltage.
  • applying a voltage in the direction of setting to the ON state is referred to as applying a voltage in the forward direction.
  • the operation for setting from the OFF state to the ON state is called a set operation
  • the operation for resetting from the ON state to the OFF state is called a reset operation
  • the voltage at which each transition occurs is called a set voltage and a reset voltage.
  • the resistance change switch 10 is set from the OFF state to the ON state only when a positive voltage is applied to the first electrode 101, and from the ON state to the OFF state only when a negative voltage is applied to the first electrode 101.
  • a reset operation occurs.
  • the resistance change switch that transitions between the ON and OFF states depending on the polarity of the applied voltage is called a bipolar resistance change switch.
  • the first electrode 101 is an electrode that is reset to an ON or OFF state by applying a positive or negative voltage
  • the second electrode 102 is an electrode facing the first electrode 101.
  • Non-Patent Document 1 discloses a resistance change switch using metal ion movement and an electrochemical reaction in an ionic conductor (a solid in which ions can move freely by application of an electric field or the like).
  • the switch disclosed in Non-Patent Document 1 is configured to include an ion conductive layer and two electrodes provided to face each other with the ion conductive layer interposed therebetween. Among these, one electrode plays a role for supplying metal ions to the ion conductive layer, and is called an “active electrode”. Metal ions are not supplied from one electrode to the ion conductive layer, and are called “inert electrodes”.
  • the active electrode corresponds to the first electrode 101 and the inactive electrode corresponds to the second electrode 102 from the equivalence of the current-voltage characteristics of the switch.
  • the inactive electrode when the inactive electrode is grounded and a negative voltage is applied to the active electrode in the ON state, a part of the metal bridge is cut. Thereby, the electrical connection between both electrodes is cut off, and the switch is turned off. It should be noted that the electrical characteristics change from the stage before the electrical connection is completely broken, such as the resistance between the two electrodes increases or the capacitance between the electrodes changes, and the electrical connection is finally broken. In order to change from the OFF state to the ON state, the inactive electrode is grounded again and a positive voltage is applied to the active electrode.
  • the resistance change type switch is non-volatile that is smaller in size than a combination of an SRAM and a transistor, which is a switch used in an FPGA, and does not require power to maintain the ON and OFF states.
  • the resistance change type switch is considered to be promising for application to FPGA.
  • application as a non-volatile memory element is conceivable by utilizing the non-volatility of this switch.
  • a crossbar switch having a resistance change switch as an element is used.
  • the crossbar switch is a maximum disposed at the intersection of each wiring to switch connection / disconnection of N first wiring groups and M second wiring groups, one set of first wiring and second wiring. It consists of N ⁇ M switches.
  • FIG. 2 a method for programming a 3 ⁇ 3 crossbar switch will be described. Assume that all the switches in the 3 ⁇ 3 crossbar switch are in the OFF state. 0V and VP are applied to the first wiring 21B and the second wiring 22B connected to the resistance change switch 20E of the target that performs the set operation, respectively. A voltage half the VP is applied to the other first wirings 21A and 21C and the second wirings 22A and 22C.
  • VP is applied to the first node 23 and 0 V is applied to the second node 24 of the resistance change switch 20E selected as the target.
  • a voltage of 1/2 VP is applied to the potential of the first electrode with respect to the second electrode.
  • a voltage of 1 ⁇ 2 VP is applied to the potential of the first electrode with respect to the second electrode.
  • the voltage between the second electrode and the first electrode is 0V. If the threshold voltage when the resistance change switch is programmed is between VP and 1 / 2VP, only the resistance change switch 20E selected as the target is set.
  • the first wiring 21B and the second wiring connected to the resistance change switch 20E of the target that performs the reset operation VE and 0 are applied to 22B, respectively.
  • a voltage half the VE is applied to the other first wirings 21A and 21C and the second wirings 22A and 22C.
  • 0 is applied to the first electrode of the resistance change switch 20E selected as the target, and VE is applied to the second electrode.
  • a voltage of ⁇ 1 / 2VE is applied to the potential of the first electrode with respect to the second electrode.
  • a voltage of ⁇ 1 / 2VE is applied to the potential of the first electrode with respect to the second electrode.
  • the voltage between the second electrode and the first electrode is 0V. If the set voltage to which the resistance change switch is programmed is between VE and 1 / 2VE, only the selected resistance change switch E of the target is reset.
  • Non-Patent Document 1 shows that a 32 ⁇ 32 crossbar switch can be programmed by this method.
  • the guaranteed period of time retained in each ON and OFF state is required to be 10 years or more, which is the same as that of a nonvolatile memory such as a flash memory.
  • a voltage applied to the signal line is applied to the switch in the ON state, while a voltage applied to the signal line is applied to the switch in the OFF state.
  • disturb failure The problem that the state transitions for each disturb is called disturb failure.
  • Non-Patent Document 2 there is a method in which one set of two bipolar resistance change switches connected in series is used as one switch.
  • Figure 3 The second electrodes 321A and 322A (FIG. 3A) in the two resistance change switches 301A and 302A (FIG. 3A) or the first electrodes 311B and 312B (FIG. 3B) are electrically connected to form a common node 33A or 33B.
  • a terminal-type switch is referred to as a three-terminal resistance change switch. As shown in FIG.
  • the three-terminal resistance change switch includes three electrodes, that is, a first node 31A or 31B, a second node 32A or 32B, and a common node 33A or 33B.
  • the common node is used for setting or resetting each resistance change switch, and is floating except during the set / reset.
  • the ON and OFF states of the three-terminal resistance change switch are distinguished by the resistance state between the first node and the second node. In the OFF state, one of the two resistance change switches is in the OFF state, and in the ON state, both the two resistance change switches are in the ON state.
  • the applied voltage is distributed to two first resistance change switches and second resistance change switches connected in series. . Therefore, the voltage applied to each resistance change switch is smaller than that of one resistance change switch. Furthermore, since the first resistance change switch and the second resistance change switch are bipolar type, any one resistance change with respect to a positive or negative voltage applied between the first node and the second node. Since the voltage is applied in the direction in which the switch is reset, the OFF state is maintained. For example, in FIG. 3A, consider a case where the first resistance change switch and the second resistance change switch are in the OFF state, and a positive voltage VD is applied to the first node and 0 V is applied to the second node. In this case, in the second resistance change switch, the potential of the first electrode is lower than that of the second electrode, and the OFF state is maintained according to FIG. 1A.
  • Makoto Miyamura, et al. "Programmable cell array using rewritable solid-electrolyte switch integrated in 90nmCMOS '', Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International, pp. 228--2011, February. 10.1109 / ISSCC.2011.5746296.
  • Munehiro Tada, et al. "Highly reliable, complementary atom switch (CAS) with low programming voltage embedded in Cu BEOL for Nonvolatile Programmable Logic '', IEEE International Electron DevicesMeeting 2011 IEDM Technical0.2.30 4, December2011. DOI: 10.1109 / IEDM.2011.6131642.
  • the resistance change switch is arranged between two different wirings, and switches between connecting or not connecting the two wirings by changing the low resistance state and the high resistance state.
  • a crossbar switch is used in order to efficiently change the connection between a large number of wirings.
  • the crossbar switch composed of a two-terminal resistance change switch has a problem in disturb resistance when it is OFF.
  • An object of the present invention is to provide a semiconductor device capable of high reliability.
  • a first resistance change switch including a resistance change layer having a first terminal and a second terminal, the resistance state of which changes when the applied voltage exceeds a reference value;
  • a resistance change layer having a third terminal and a fourth terminal, wherein the third terminal is connected to the second terminal to form a common node, and the resistance state changes when the applied voltage exceeds a reference value
  • a second resistance change switch including: A first wiring connected to the first terminal; A second wiring connected to the fourth terminal and extending in a direction intersecting with the first wiring in a plan view; A current controlling switch element having one end connected to the common node;
  • a semiconductor device is provided.
  • a first resistance change switch including a resistance change layer having a first terminal and a second terminal, the resistance state of which changes when the applied voltage exceeds a reference value;
  • a resistance change layer having a third terminal and a fourth terminal, wherein the third terminal is connected to the second terminal to form a common node, and the resistance state changes when the applied voltage exceeds a reference value
  • a second resistance change switch including: A first wiring connected to the first terminal via a first current control switch element; A second wiring connected to the fourth terminal via a second current control switch element and extending in a direction crossing the first wiring in plan view; A third wiring connected to the common node;
  • a semiconductor device is provided.
  • a first resistance change switch including a resistance change layer having a first terminal and a second terminal, the resistance state of which changes when the applied voltage exceeds a reference value; A resistance change layer having a third terminal and a fourth terminal, wherein the third terminal is connected to the second terminal to form a common node, and the resistance state changes when the applied voltage exceeds a reference value
  • a second resistance change switch including: A first wiring connected to the first terminal; A second wiring connected to the fourth terminal and extending in a direction intersecting with the first wiring in a plan view; A current control switch element connected to the common node; A semiconductor device having A voltage exceeding the reference value is applied between one of the first wiring and the second wiring and a terminal not connected to the common node of the current control switch element; By making the current control switch element conductive, the resistance state of either one of the first resistance change switch or the second resistance change switch is changed first, Thereafter, a voltage exceeding the reference value is applied between the other wiring and the terminal not connected to the common node of the current control switch element, and
  • a first resistance change switch including a resistance change layer having a first terminal and a second terminal, the resistance state of which changes when the applied voltage exceeds a reference value; A resistance change layer having a third terminal and a fourth terminal, wherein the third terminal is connected to the second terminal to form a common node, and the resistance state changes when the applied voltage exceeds a reference value
  • a second resistance change switch including: A first wiring connected to the first terminal via a first current control switch element; A second wiring connected to the fourth terminal via a second current control switch element and extending in a direction crossing the first wiring in plan view; A third wiring connected to the common node; A semiconductor device having A voltage exceeding the reference value is applied between one of the first wiring and the second wiring and the third wiring, and the first current control switch element and the second current control Of the switch elements, one of the first resistance change switch and the second resistance change switch is turned on by turning on the current control switch element connected to the wiring to which the voltage is applied.
  • FIG. 1 is a diagram showing a configuration of a semiconductor device according to a first embodiment of the present invention. It is a figure which shows the structure of the semiconductor device which concerns on the 2nd Embodiment of this invention. It is a figure for demonstrating operation
  • the semiconductor device includes a three-terminal resistance change switch 400 including a first resistance change switch 401 and a second resistance change switch 402, a first wiring 411, and a second wiring. 421 and a current control switch element 404.
  • the first resistance change switch 401 is in contact with the resistance change layer whose resistance state changes according to the polarity of the applied voltage, and the first terminal 4011 and the second terminal that are in contact with the resistance change layer and are not electrically connected to each other.
  • a terminal 4012 is provided.
  • the second resistance change switch 402 is in contact with the resistance change layer whose resistance state changes according to the polarity of the applied voltage, and the third terminal 4021 and the fourth terminal that are in contact with the resistance change layer and are not electrically connected to each other.
  • a terminal 4022 is included.
  • the second terminal 4012 of the first resistance change switch 401 and the third terminal 4021 of the second resistance change switch 402 are connected to each other to form a common node 403.
  • One terminal of the current control switch element 404 is connected to the common node 403.
  • the current control switch element 404 controls the current flowing between the first terminal 4011 and the common node 403 and between the fourth terminal 4022 and the common node 403 by the voltage applied to the gate terminal.
  • the first wiring 411 transmits a signal for controlling the voltage applied to the first terminal 4011.
  • the second wiring 421 transmits a signal for controlling the voltage applied to the fourth terminal 4022.
  • the second wiring 421 extends in a direction intersecting with the first wiring 411 in plan view.
  • the second wiring 421 extends so as to intersect with the first wiring 411 at a right angle in plan view, and is connected to the first wiring 411 via the three-terminal resistance change switch 400.
  • the first resistance change switch 401 and the second resistance change switch 402 are preferably of a bipolar type as shown in the present embodiment. Further, as shown in this embodiment, the common node 403 preferably connects terminals having the same polarity.
  • the semiconductor device according to the present embodiment may have a configuration as shown in FIG. 4B.
  • the first resistance change switch 401 is connected to the first wiring 411 via the first current control switch element 405.
  • the first current control switch element 405 controls the current flowing between the first terminal 4011 and the common node 403 according to the voltage applied to the gate terminal.
  • the second resistance change switch 402 is connected to the second wiring 421 via the second current control switch element 406.
  • the second current control switch element 406 controls the current flowing between the fourth terminal 4022 and the common node 403 according to the voltage applied to the gate terminal.
  • a third wiring 431 is connected to the common node 403.
  • the third wiring 431 transmits a signal for controlling the voltage applied to the common node 403.
  • the three-terminal resistance change switch 400 in FIG. 4A a method of transitioning from the OFF state to the ON state will be described.
  • the three-terminal resistance change switch being in the OFF state means that both the first resistance change switch 401 and the second resistance change switch 402 are in the OFF state.
  • that the three-terminal resistance change switch is in the ON state means that both the first resistance change switch 401 and the second resistance change switch 402 are in the ON state.
  • the resistance change switch the resistance state changes depending on the voltage difference between the first electrode and the second electrode and the polarity of the voltage applied to each electrode. Therefore, the voltage value of the other electrode is higher than one electrode. Whether or not is a requirement.
  • the low voltage includes a ground potential.
  • the second terminal 421 of the first resistance change switch 401 and the third terminal 4021 of the second resistance change switch 402 are connected to form a common node 403. Further, a current control switch element 404 is connected to the common node 403. The current control switch element 404 is used to control the ON resistance of each resistance change switch by limiting the current flowing through the first resistance change switch 401 and the second resistance change switch 402 during the set operation.
  • the current control switch element 404 is used to control the ON resistance of each resistance change switch by limiting the current flowing through the first resistance change switch 401 and the second resistance change switch 402 during the set operation.
  • a high voltage is applied to the second wiring 421.
  • a low voltage is applied to the terminal that is not connected to the common node 403.
  • a voltage is applied to the gate terminal of the current control switch element 404 to turn on the current control switch element 404.
  • the second resistance change switch 402 transitions to the ON state.
  • the gate voltage of the current control switch element 404 the current flowing through the second resistance change switch 402 during the set operation is controlled to about 1 milliA, for example.
  • the ON resistance of the second resistance change switch 402 is about 500 ohms.
  • a high voltage is applied to the first wiring 411.
  • a low voltage is applied to the terminal that is not connected to the common node 403.
  • a voltage is applied to the gate terminal of the current control switch element 404 to turn on the current control switch element 404.
  • the first resistance change switch 401 transitions to the ON state.
  • the gate voltage of the current control switch element 404 the current flowing through the first resistance change switch 401 during the set operation is controlled to about 500 ⁇ A, for example.
  • the ON resistance of the first resistance change switch 401 is about 1 kilohm.
  • the first resistance change switch 401 was changed to the ON state.
  • the potential of the common node 403 changes, so that a slight current may flow through the second resistance change switch 402 in the ON state. It is conceivable that the resistance state of the second resistance change switch 402 changes from the ON state to the OFF state due to this slight current.
  • the resistance state of each resistance change switch transitions when a current of the same level as the current at the time of setting or resetting flows.
  • the ON resistance of the second resistance change switch 402 that is initially set to the ON state is lower than the first resistance change switch 401 that is set to the ON state later. Therefore, even if an electric current flows into the 2nd resistance change switch 402 made to change to ON state previously, the resistance state of the 2nd resistance change switch 402 does not change.
  • the difference between the second resistance change switch 402 and the first resistance change switch 401 is about the same as that of the first resistance change switch 401, so that the three-terminal resistance change switch 400 can It was possible to make a transition to the ON state without fail.
  • the order of changing the resistance state is not limited to the above, and the first resistance change switch 401 may be switched to the ON state first.
  • a high voltage is applied to the third wiring 431. Further, a low voltage is applied to the first wiring 411. Further, the first current control switch element 405 is turned on.
  • the first resistance change switch 401 transitions to the ON state.
  • the gate voltage of the first current control switch element 405 the current flowing through the first resistance change switch 401 during the set operation is controlled to about 1 milliA, for example.
  • the ON resistance of the first resistance change switch 401 is about 500 ohms.
  • a high voltage is applied to the third wiring 431. Further, a low voltage is applied to the second wiring 421. Further, the second current control switch element 406 is turned on. By controlling the potential difference of the second wiring 421 with respect to the common node 403 to be larger than the set voltage, the second resistance change switch 402 transitions to the ON state. At this time, by adjusting the gate voltage of the second current control switch element 406, the current flowing through the second resistance change switch 402 during the set operation is controlled to about 500 microA, for example. As a result, the ON resistance of the second resistance change switch 402 is about 1 kilohm.
  • the second resistance change switch 402 was changed to the ON state.
  • the potential of the common node 403 changes, so that a slight current may flow through the first resistance change switch 401 in the ON state. It is conceivable that the resistance state of the first resistance change switch 401 changes from the ON state to the OFF state due to this slight current.
  • the resistance state of each resistance change switch transitions when a current of the same level as the current at the time of setting or resetting flows.
  • the ON resistance of the first resistance change switch 401 that is first set to the ON state is lower than the second resistance change switch 402 that is set to the ON state later. As a result, even if a current flows through the first resistance change switch 401 that has been previously changed to the ON state, the resistance state of the first resistance change switch 401 does not change.
  • the difference between the first resistance change switch 401 and the second resistance change switch 402 is approximately the same as that of the first resistance change switch 401 and the second resistance change switch 402. It was possible to make a transition to the ON state without fail. Note that the order of changing the resistance state is not limited to the above, and the second resistance change switch 402 may be switched to the ON state first.
  • the resistance state of the three-terminal resistance change switch 400 is determined based on the resistance states of both the first resistance change switch 401 and the second resistance change switch 402. With this configuration, even if the resistance state of one resistance change switch changes due to a malfunction, the resistance state of the entire three-terminal resistance change switch 400 can be maintained, so that high reliability of the semiconductor device can be realized.
  • the second terminal 4012 and the third terminal 4021 having the same polarity are connected to each other to form the common node 403.
  • a configuration in which a voltage is applied between the first wiring 411 and the second wiring 422 and the common node 403 and the resistance states of two resistance change switches connected in series are individually changed. Take. With this configuration, the set voltage can be suppressed lower than in the case where the resistance states of two resistance change switches connected in series are collectively changed, and power saving of the semiconductor device can be realized.
  • the current is controlled by using the current control switch element 404 when the resistance state of each resistance change switch is changed.
  • the ON resistance of the resistance change switch whose resistance state has been changed first can be controlled to be lower than the ON resistance of the resistance change switch whose resistance state has been changed later.
  • the resistance state of the subsequent resistance change switch is changed, the resistance state can be prevented from changing even if a current flows through the resistance change switch whose resistance state has been changed first. Therefore, the reliability of the semiconductor device can be further increased.
  • FIG. 5 is a configuration diagram of a semiconductor device using the three-terminal resistance change switch 500.
  • the semiconductor device includes a three-terminal resistance change switch 500, a first wiring 511, and a second wiring 521.
  • at least one of the first wiring 511 and the second wiring 521 is provided in plural.
  • the first wiring 511 and the second wiring 521 intersect each other, and the shortest distance between the first wiring 511 and the second wiring 521 or a position in the vicinity thereof (hereinafter referred to as an intersection).
  • a three-terminal resistance change switch 50 is provided.
  • One three-terminal resistance change switch 500 is provided at each intersection of the first wiring 511 and the second wiring 521.
  • the terminal of the first resistance change switch 501 connected to the first wiring 511 is the first terminal, and the terminal of the second resistance change switch 502 connected to the second wiring 521 is the fourth terminal. Then, the second terminal of the first resistance change switch 501 and the third terminal of the second resistance change switch 502 are connected to form a common node 503.
  • the conduction state between the first wiring 511 and the second wiring 521 can be controlled according to the ON / OFF state of the three-terminal resistance change switch 500.
  • a current control switch element 505 is connected to the three-terminal resistance change switch 500 in order to change the ON / OFF state.
  • a source terminal and a drain terminal of the current control switch element 505 are connected to the first terminal and the common node 503. Thereby, the current flowing through the first resistance change switch 501 can be bypassed.
  • ON / OFF of the current control switch element 505 is controlled by a voltage applied to the control node 504. When the current control switch element 505 is ON, a current can flow through the current control switch element 505.
  • the operation of the semiconductor device will be described.
  • the first resistance change switch 501 and the second resistance change switch 502 constituting the three-terminal resistance change switch 500 are both set to the OFF state.
  • the behavior of the three-terminal resistance change switch 500 with respect to noise or the like in each case where a positive high voltage lower than the set voltage is applied to the second wiring 521 will be described.
  • the bias condition is that the voltage (VL1) of the first wiring 511 is the first This means that the voltage (VL1> VL2) is higher than the voltage (VL2) of the two wirings 521.
  • the potential of the fourth terminal is lower than that of the third terminal, and a voltage in the direction of resetting from the ON state to the OFF state is applied as shown in FIG. 1A.
  • the first resistance change switch 501 the potential of the first terminal is higher than that of the second terminal, and as shown in FIG. 1, a voltage in the direction of setting from the OFF state to the ON state is applied. For this reason, the first resistance change switch 501 may malfunction and shift to the ON state.
  • the second resistance change switch 502 since the voltage in the direction of resetting from the ON state to the OFF state is applied to the second resistance change switch 502, the second resistance change switch 502 maintains the OFF state. Accordingly, since at least the second resistance change switch 502 maintains the OFF state, the three-terminal resistance change switch 500 maintains the OFF state.
  • the bias condition is that the voltage (VL1) of the first wiring 511 is the first It means that it is lower than the voltage (VL2) of the two wirings 521 (VL1 ⁇ VL2).
  • the first resistance change switch 501 the potential of the first terminal is lower than that of the second terminal, and a voltage in a direction to reset from the ON state to the OFF state is applied as shown in FIG. 1A.
  • the second resistance change switch 502 the potential of the third terminal is higher than that of the fourth terminal, and as shown in FIG. 1, a voltage in the direction of setting from the OFF state to the ON state is applied. Therefore, there is a possibility that the second resistance change switch 502 malfunctions and transitions to the ON state.
  • the first resistance change switch 501 since the voltage in the direction of resetting from the ON state to the OFF state is applied to the first resistance change switch 501, the first resistance change switch 501 maintains the OFF state. Therefore, since at least the first resistance change switch 501 maintains the OFF state, the three-terminal resistance change switch 500 maintains the OFF state.
  • the three-terminal resistance change switch 500 is formed by connecting a first resistance change switch 501 and a second resistance change switch 502 in series. Therefore, the voltage applied to each of the first resistance change switch 501 and the second resistance change switch 502 is the same as the voltage applied to the three-terminal resistance change switch 500 of the first resistance change switch 501 and the second resistance change switch 502. The voltage is divided according to the resistance value. Therefore, even if the voltage difference applied to the three-terminal resistance change switch 500 is in the vicinity of the set voltage, the three-terminal resistance change switch 500 in the OFF state is unlikely to malfunction.
  • the reliability of this semiconductor device is improved by using a three-terminal resistance change switch that is unlikely to cause a malfunction to be set to the ON state when it is OFF in the semiconductor device.
  • a highly reliable FPGA can be manufactured by using a three-terminal resistance change switch for the FPGA.
  • a positive high voltage (VH) equal to or higher than the set voltage is applied to the second wiring 521, and a low voltage (VL) is applied to the first wiring 511. Then, a voltage is applied to the control node 504 so that the current control switch element 505 is turned on.
  • the second resistance change switch 502 When the current control switch element 505 is turned on, the voltage of the common node 503 becomes a low voltage substantially the same as the voltage of the first wiring 511. Therefore, a voltage equal to or higher than the set voltage is applied to the second resistance change switch 502, and the second resistance change switch 502 transitions to the ON state (FIG. 6A). At this time, as in the first embodiment, the second resistance change switch 502 is turned on by setting the current flowing through the current control switch element 505 to about 1 milliA by the gate voltage of the current control switch element 505. It is preferable to control the resistance to around 500 ohms.
  • the second resistance change switch 502 is turned on by the operation of FIG. 6A. On the other hand, since the current control switch element 505 is ON, the first resistance change switch 501 to which a high voltage is not applied holds the OFF state.
  • a low voltage is applied to the second wiring 521 and a high voltage is applied to the first wiring 511. Since the second resistance change switch 502 is in the ON state, the common node 503 has substantially the same low voltage as the second wiring 521.
  • the current control switch element 505 is turned off, a high voltage is applied to the first terminal side of the first resistance change switch 501. Accordingly, a voltage equal to or higher than the set voltage is applied to the first resistance change switch 501, and the first resistance change switch 501 transitions to the ON state (FIG. 6B).
  • another current control switch element is connected between the fourth terminal and the second wiring 521 to control the flowing current to about 500 microA. By doing so, it is preferable to control the ON resistance of the first resistance change switch 501 to about 1 kilohm.
  • the resistance state of the second resistance change switch 502 may be changed from the ON state to the OFF state. There is.
  • a current comparable to the current at the time of setting that is, 1 milliA
  • the resistance state of the second resistance change switch 502 transitions. For this reason, the current that flows when the first resistance change switch 501 is set needs to be smaller than 1 milliA.
  • it since it is about 500 micro A, it can prevent that the resistance state of the 2nd resistance change switch 502 changes.
  • both the first resistance change switch 501 and the second resistance change switch 502 are set to the ON state, the three-terminal resistance change switch is turned on. Accordingly, signal transmission is possible between the first wiring 511 and the second wiring 521.
  • the order of changing the resistance state of each resistance change switch is not limited to the above, and the current control switch element 505 is installed between the fourth terminal and the common node 503, and the first resistance change switch 501 is first. You may make a transition to the ON state.
  • the ON resistance of the first resistance change switch 501 is higher than the ON resistance of the second resistance change switch 502.
  • the first resistance change switch 501 having a high ON resistance is reset to the OFF state.
  • a positive high voltage equal to or higher than the set voltage is applied to the second wiring 521, and a low voltage is applied to the first wiring 511 (FIG. 7A). Then, a voltage is applied to the control node 504 so that the current control switch element 505 is turned off. Here, current flows through the second resistance change switch 502 and the first resistance change switch 501 in the ON state. Since the forward bias voltage is applied to the second resistance change switch 502 in the ON state, the resistance state does not change. On the other hand, since a reverse bias voltage is applied to the first resistance change switch 501, the first resistance change switch 501 is reset to the OFF state.
  • the first resistance change switch 501 was turned off.
  • the second resistance change switch 502 to which the forward voltage is applied maintains the ON state.
  • a low voltage is applied to the second wiring 521 and a high voltage is applied to the first wiring 511. Further, a voltage is applied to the control node 504 so that the current control switch element 505 is turned on (FIG. 7B). Since the current control switch element 505 is in the ON state, the potential of the common node 503 becomes the same high voltage as that of the first wiring 511, and a reverse bias voltage is applied to the second resistance change switch 502. Accordingly, the second resistance change switch 502 is reset to the OFF state.
  • both the first resistance change switch 501 and the second resistance change switch 501 are reset to the OFF state, the three-terminal resistance change switch 500 is turned OFF. Accordingly, signal transmission is blocked between the first wiring 511 and the second wiring 521.
  • FIG. 8 illustrates a semiconductor device having nine three-terminal resistance change switches 80A to 80I, three first wires 81A, 81B, 81C, and second wires 82A, 82B, 82C.
  • a case where the three-terminal resistance change switch 80E in the OFF state is changed to the ON state will be described.
  • the first wiring 81B and the second wiring 82B are used.
  • a low voltage is applied to the first wiring 81B.
  • a high voltage is applied to the second wiring 82B, and control is performed so that the potential difference between the first wiring 81B and the second wiring 82B is equal to or higher than the set voltage.
  • the current control switch element 804 is turned on, a voltage equal to or higher than the set voltage is applied to the second resistance change switch 803 of the three-terminal resistance change switch 80E, and the second resistance change of the three-terminal resistance change switch 80E.
  • the switch transits to the ON state (the same operation as in FIG.
  • a high voltage is applied to the first wiring 81B.
  • a low voltage is applied to the second wiring 82B, and the potential difference between the first wiring 81B and the second wiring 82B is controlled to be equal to or higher than the set voltage.
  • a voltage equal to or higher than the set voltage is applied to the first resistance change switch 802 of the three-terminal resistance change switch 80E, and the first resistance change of the three-terminal resistance change switch 80E.
  • the switch 801 transitions to the ON state (the same operation as in FIG. 6B). With the above operation, the three-terminal resistance change switch 80E changes to the ON state.
  • the high voltage applied to the first wiring 81B and the second wiring 82B are applied to the first wiring 81A, 81C and the second wiring 82A, 82C that are not connected to the selected three-terminal resistance switch 80E. It is preferable to apply a voltage intermediate to the applied low voltage. By applying the intermediate voltage, the three-terminal resistance change switches 80B, 80H, 80D, and 80F are in a half-selected state, and do not exceed the set voltage for transitioning to the ON state.
  • the three-terminal resistance change switch 80E in the ON state is reset to the OFF state.
  • the first wiring 81B and the second wiring 82B are used.
  • a low voltage is applied to the first wiring 81B.
  • a high voltage is applied to the second wiring 82B, and control is performed so that the potential difference between the first wiring 81B and the second wiring 82B is equal to or higher than the reset voltage.
  • a voltage equal to or higher than the reset voltage is applied to the second resistance change switch 802 of the three-terminal resistance change switch 80E, and the second resistance change of the three-terminal resistance change switch 80E.
  • the switch 802 is reset to the OFF state (the same operation as in FIG. 7A). Further, a high potential is applied to the first wiring 81B. Further, a low voltage is applied to the second wiring 82B, and control is performed so that the potential difference between the first wiring 81B and the second wiring 82B is equal to or higher than the reset voltage. Then, by turning on the current control switch element 804, a voltage equal to or higher than the reset voltage is applied to the first resistance change switch 801 of the three-terminal resistance change switch 80E, and the first resistance change of the three-terminal resistance change switch 80E. The switch 801 is reset to the OFF state (the same operation as in FIG. 7B). With the above operation, the three-terminal resistance change switch 80E is reset to the OFF state.
  • the first wiring 81A, 81C and the second wiring 82A, 82C not connected to the selected three-terminal resistance switch are applied to the high voltage applied to the first wiring 81B and the second wiring 82B. It is preferable to apply a voltage intermediate to the low voltage. By applying the intermediate voltage, the three-terminal resistance change switches 80B, 80H, 80D, and 80F are in a half-selected state, and do not exceed the reset voltage for transitioning to OFF.
  • FIG. 9 shows an example using the semiconductor device in this embodiment.
  • FIG. 9 shows the conductivity distribution of each switch when 32 switches in the diagonal component of a 32 ⁇ 32 crossbar switch using a three-terminal resistance change switch are shifted to the ON state.
  • the shade of the color represents the conductivity, the dark color represents that the conductivity is small, and the light color represents that the conductivity is large.
  • FIG. 9 shows that only a desired three-terminal resistance change switch can be correctly programmed in the 32 ⁇ 32 crossbar switch.
  • a first resistance change switch including a resistance change layer having a first terminal and a second terminal, the resistance state of which changes when the applied voltage exceeds a reference value;
  • a resistance change layer having a third terminal and a fourth terminal, wherein the third terminal is connected to the second terminal to form a common node, and the resistance state changes when the applied voltage exceeds a reference value
  • a second resistance change switch including: A first wiring connected to the first terminal; A second wiring connected to the fourth terminal and extending in a direction intersecting with the first wiring in a plan view; A current controlling switch element having one end connected to the common node; A semiconductor device.
  • a first resistance change switch including a resistance change layer having a first terminal and a second terminal, the resistance state of which changes when the applied voltage exceeds a reference value; A resistance change layer having a third terminal and a fourth terminal, wherein the third terminal is connected to the second terminal to form a common node, and the resistance state changes when the applied voltage exceeds a reference value
  • a second resistance change switch including: A first wiring connected to the first terminal via a first current control switch element; A second wiring connected to the fourth terminal via a second current control switch element and extending in a direction crossing the first wiring in plan view; A third wiring connected to the common node; A semiconductor device.
  • the current control switch element is: A semiconductor device in which the other end is connected to one of the first terminal and the fourth terminal.
  • the first resistance change switch and the second resistance change switch are bipolar semiconductor devices.
  • the second terminal and the third terminal are semiconductor devices having the same polarity.
  • At least one of the first wiring and the second wiring is provided in plural, A semiconductor device in which a three-terminal resistance switch composed of the first resistance change switch and the second resistance change switch is connected to each intersection of the first wiring and the second wiring.
  • a first resistance change switch including a resistance change layer having a first terminal and a second terminal, the resistance state of which changes when the applied voltage exceeds a reference value; A resistance change layer having a third terminal and a fourth terminal, wherein the third terminal is connected to the second terminal to form a common node, and the resistance state changes when the applied voltage exceeds a reference value
  • a second resistance change switch including: A first wiring connected to the first terminal; A second wiring connected to the fourth terminal and extending in a direction intersecting with the first wiring in a plan view; A current control switch element connected to the common node; A semiconductor device having A voltage exceeding the reference value is applied between one of the first wiring and the second wiring and a terminal not connected to the common node of the current control switch element; By making the current control switch element conductive, the resistance state of either one of the first resistance change switch or the second resistance change switch is changed first, Thereafter, a voltage exceeding the reference value is applied between the other wiring and the terminal not connected to the common node of the current control switch element, and
  • a programming method of changing the resistance state of the other resistance change switch and programming the three-terminal resistance change switch constituted by the first resistance change switch or the second resistance change switch is.
  • a first resistance change switch including a resistance change layer having a first terminal and a second terminal, the resistance state of which changes when the applied voltage exceeds a reference value;
  • a resistance change layer having a third terminal and a fourth terminal, wherein the third terminal is connected to the second terminal to form a common node, and the resistance state changes when the applied voltage exceeds a reference value
  • a second resistance change switch including: A first wiring connected to the first terminal via a first current control switch element; A second wiring connected to the fourth terminal via a second current control switch element and extending in a direction crossing the first wiring in plan view; A third wiring connected to the common node;
  • a semiconductor device having A voltage exceeding the reference value is applied between one of the first wiring and the second wiring and the third wiring, and the first current control switch element and the second current control Of the switch elements, one of the first resistance change switch and the
  • the current control switch element is: The other end is connected to one of the first terminal and the fourth terminal, By turning on the current control switch element, either one of the first resistance change switch and the second resistance change switch is bypassed, and the first resistance change switch and the second resistance change switch A programming method for performing individual programs.
  • the first resistance change switch and the second resistance change switch are a bipolar type programming method.
  • the first resistance change switch and the second resistance change switch are a bipolar type programming method.
  • At least one of the first wiring and the second wiring is provided in plural, A three-terminal resistance switch composed of the first resistance change switch and the second resistance change switch is connected to each intersection of the first wiring and the second wiring, A programming method for selecting a unique three-terminal resistance change switch to be programmed based on a signal from the first wiring and a signal from the second wiring.

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

Cette invention porte sur un dispositif à semi-conducteurs qui comprend : un premier élément de commutation à résistance variable (401), qui comprend une première borne (4011) et une deuxième borne (4012), et qui comprend une couche à résistance variable dont l'état de résistance varie lorsqu'une tension appliquée dépasse une valeur de référence ; un deuxième élément de commutation à résistance variable (402), qui comprend une troisième borne (4021) et une quatrième borne (4022), possède un nœud commun (403) formé par connexion de la troisième borne (4021) à la deuxième borne (4012), et comprend une couche à résistance variable dont l'état de résistance varie lorsqu'une tension appliquée dépasse une valeur de référence ; un premier câblage (411) connecté à la première borne (4011) ; un deuxième câblage (421), qui est connecté à la quatrième borne (4022) et qui s'étend dans la direction croisant le premier câblage (411) en vue plane ; et un élément de commutation de commande de courant (404), dont une borne est connectée au nœud commun (403).
PCT/JP2013/001210 2012-06-20 2013-02-28 Dispositif à semi-conducteurs et procédé de programmation WO2013190742A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014521209A JP6094582B2 (ja) 2012-06-20 2013-02-28 半導体装置およびプログラミング方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012139054 2012-06-20
JP2012-139054 2012-06-20

Publications (1)

Publication Number Publication Date
WO2013190742A1 true WO2013190742A1 (fr) 2013-12-27

Family

ID=49768357

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/001210 WO2013190742A1 (fr) 2012-06-20 2013-02-28 Dispositif à semi-conducteurs et procédé de programmation

Country Status (2)

Country Link
JP (1) JP6094582B2 (fr)
WO (1) WO2013190742A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016042750A1 (fr) * 2014-09-18 2016-03-24 日本電気株式会社 Commutateur crossbar, circuit integre logique utilisant celui-ci et dispositif semi-conducteur
WO2017126544A1 (fr) * 2016-01-20 2017-07-27 日本電気株式会社 Circuit reconfigurable, système de circuit reconfigurable et procédé de fonctionnement de circuit reconfigurable
JP2017182848A (ja) * 2016-03-28 2017-10-05 日本電気株式会社 相補型スイッチユニットのプログラム方法、および半導体装置
WO2017195509A1 (fr) * 2016-05-13 2017-11-16 Nec Corporation Circuit reconfigurable et son procédé d'utilisation
EP3416171A1 (fr) * 2017-06-15 2018-12-19 INTEL Corporation Circuits intégrés à éléments de mémoire résistifs non volatiles complémentaires
WO2019059118A1 (fr) * 2017-09-22 2019-03-28 日本電気株式会社 Circuit logique intégré
JPWO2018051931A1 (ja) * 2016-09-13 2019-06-24 日本電気株式会社 半導体装置およびそのプログラミング方法
JP2020521265A (ja) * 2017-05-12 2020-07-16 日本電気株式会社 相補型抵抗スイッチのための書き込み装置及び方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032867A (ja) * 2004-07-21 2006-02-02 Sony Corp 記憶素子及びその駆動方法
JP2010225194A (ja) * 2009-03-19 2010-10-07 Toshiba Corp 不揮発性メモリおよび再構成可能な回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050212022A1 (en) * 2004-03-24 2005-09-29 Greer Edward C Memory cell having an electric field programmable storage element, and method of operating same
JP5790660B2 (ja) * 2010-09-28 2015-10-07 日本電気株式会社 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032867A (ja) * 2004-07-21 2006-02-02 Sony Corp 記憶素子及びその駆動方法
JP2010225194A (ja) * 2009-03-19 2010-10-07 Toshiba Corp 不揮発性メモリおよび再構成可能な回路

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016042750A1 (ja) * 2014-09-18 2017-07-27 日本電気株式会社 クロスバースイッチ、これを用いた論理集積回路および半導体装置
WO2016042750A1 (fr) * 2014-09-18 2016-03-24 日本電気株式会社 Commutateur crossbar, circuit integre logique utilisant celui-ci et dispositif semi-conducteur
US10424617B2 (en) 2014-09-18 2019-09-24 Nec Corporation Crossbar switch with an arrangement of wires, logic integrated circuit using the same, and semiconductor device
JPWO2017126544A1 (ja) * 2016-01-20 2018-11-22 日本電気株式会社 再構成可能回路、再構成可能回路システム、および再構成可能回路の動作方法
WO2017126544A1 (fr) * 2016-01-20 2017-07-27 日本電気株式会社 Circuit reconfigurable, système de circuit reconfigurable et procédé de fonctionnement de circuit reconfigurable
JP2017182848A (ja) * 2016-03-28 2017-10-05 日本電気株式会社 相補型スイッチユニットのプログラム方法、および半導体装置
WO2017195509A1 (fr) * 2016-05-13 2017-11-16 Nec Corporation Circuit reconfigurable et son procédé d'utilisation
US11018671B2 (en) 2016-05-13 2021-05-25 Nec Corporation Reconfigurable circuit and the method for using the same
JPWO2018051931A1 (ja) * 2016-09-13 2019-06-24 日本電気株式会社 半導体装置およびそのプログラミング方法
JP2020521265A (ja) * 2017-05-12 2020-07-16 日本電気株式会社 相補型抵抗スイッチのための書き込み装置及び方法
EP3416171A1 (fr) * 2017-06-15 2018-12-19 INTEL Corporation Circuits intégrés à éléments de mémoire résistifs non volatiles complémentaires
WO2019059118A1 (fr) * 2017-09-22 2019-03-28 日本電気株式会社 Circuit logique intégré
JPWO2019059118A1 (ja) * 2017-09-22 2020-11-26 日本電気株式会社 論理集積回路

Also Published As

Publication number Publication date
JP6094582B2 (ja) 2017-03-15
JPWO2013190742A1 (ja) 2016-02-08

Similar Documents

Publication Publication Date Title
JP6094582B2 (ja) 半導体装置およびプログラミング方法
US8816719B2 (en) Re-programmable antifuse FPGA utilizing resistive CeRAM elements
JP5032611B2 (ja) 半導体集積回路
JP5790660B2 (ja) 半導体装置
JP2013165282A (ja) メモリデバイスでの方法及びシステム
JP6245171B2 (ja) 半導体装置およびプログラミング方法
US10832771B2 (en) Semiconductor memory device
CN104396014A (zh) 以反熔丝为特征的集成电路器件及其制造方法
JP2015170700A (ja) 不揮発性半導体記憶装置
JP6962327B2 (ja) 半導体装置およびそのプログラミング方法
US10396798B2 (en) Reconfigurable circuit
JP2017037689A (ja) 半導体装置およびスイッチセルの書き換え方法
JP6753104B2 (ja) 相補型スイッチユニットのプログラム方法、および半導体装置
JP7563747B2 (ja) 記憶装置およびプログラミング方法
JP7015568B2 (ja) 半導体装置
US9343150B2 (en) Programmable logic device with resistive change memories
JP5023615B2 (ja) スイッチング素子の駆動方法
JPWO2019159844A1 (ja) 半導体装置
US9112492B2 (en) Non-volatile electronic logic module
JP2008182094A (ja) スイッチアレイ

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13806081

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2014521209

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13806081

Country of ref document: EP

Kind code of ref document: A1