WO2013183218A1 - 単結晶製造装置 - Google Patents
単結晶製造装置 Download PDFInfo
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- WO2013183218A1 WO2013183218A1 PCT/JP2013/002804 JP2013002804W WO2013183218A1 WO 2013183218 A1 WO2013183218 A1 WO 2013183218A1 JP 2013002804 W JP2013002804 W JP 2013002804W WO 2013183218 A1 WO2013183218 A1 WO 2013183218A1
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- hot water
- crucible
- water leak
- raw material
- material melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Definitions
- the present invention relates to an apparatus for producing a single crystal by the Czochralski method (CZ method).
- a silicon wafer having a mirror-finished surface manufactured from a silicon single crystal grown by the CZ method is mainly used.
- the single crystal manufacturing apparatus and its furnace components are becoming larger.
- the single crystal manufacturing apparatus 101 includes a main chamber (pulling chamber) 102, a crucible 103 stored in the main chamber 102, and a cylindrical heater arranged so as to surround the crucible 103. 104, a crucible holding shaft 105 for rotating the crucible 103 and its rotation mechanism (not shown), a seed chuck 107 for holding a silicon seed crystal 106, a wire 108 for pulling up the seed chuck 107, and a wire 108 A winding mechanism (not shown) for winding is provided.
- the crucible 103 is provided with a quartz crucible on the side for accommodating the raw material melt (hot water) (here, silicon melt) 109 inside, and a graphite crucible on the outside thereof.
- a heater heat insulating material 110 is installed around the outside of the cylindrical heater 104, and a heat insulating plate 111 is arranged at the bottom.
- a method for growing a single crystal by the single crystal manufacturing apparatus 101 will be described.
- a crucible 103 a high-purity polycrystalline raw material of silicon is melted by heating to a melting point (about 1420 ° C.) or higher.
- a melting point about 1420 ° C.
- the tip of the seed crystal 106 is brought into contact with or immersed in the approximate center of the molten metal surface.
- the crucible holding shaft 105 is rotated in an appropriate direction, the wire 108 is wound while being wound, and the seed crystal 106 is pulled up to start growing a single crystal.
- a substantially cylindrical single crystal rod 112 can be obtained by appropriately adjusting the pulling speed and temperature.
- Both the quartz crucible and the graphite crucible in the above-described single crystal manufacturing apparatus 101 have high heat resistance, but have a drawback of being somewhat brittle and poor in impact resistance. Therefore, when pulling the single crystal, if a polycrystalline raw material is put into the crucible 103, the crucible 103 may be cracked by the impact, and the raw material melt 109 may leak from there. In addition, hot water in the crucible 103 may be scattered around the crucible 103 when the polycrystalline raw material is charged. Further, when the crucible 103 is gradually deteriorated by use or the single crystal 112 being pulled is dropped, there is a risk that the crucible 103 is destroyed and almost all of the hot water flows out.
- a hot water receiving tray 113 having an internal volume capable of accommodating all molten raw materials is disposed at the bottom of the main chamber 102.
- the cylindrical heater 104 is connected to an electrode 114 for supplying power to the heater via a clamp or the like.
- the electrode 114 is inserted from the bottom of the main chamber 102 and supports the cylindrical heater 104 from below.
- the present inventor investigated this electrode.
- the electrode connected to the cylindrical heater is designed to be located immediately below the crucible containing the raw material melt.
- the present inventor has found that when the molten metal leaks from the crucible, the raw material melt is applied to the electrode from above, which may cause damage to the water-cooled metal electrode.
- the present invention has been made in view of the above problems, and an object of the present invention is to provide a single crystal production apparatus capable of protecting an electrode supporting a cylindrical heater from a raw material melt that has leaked from a crucible. To do.
- the present invention provides a crucible for containing a raw material melt, a cylindrical heater that surrounds the crucible and heats the raw material melt, a main chamber for storing these, A choke comprising an electrode inserted from the bottom to support the cylindrical heater and supplying electric power, and a hot water receiving tray disposed at the bottom of the main chamber and containing a raw material melt leaking from the crucible.
- An apparatus for producing a single crystal by the Larsky method A single crystal production characterized in that a hot water leak cover for preventing the raw material melt leaking from the crucible from being applied to the electrode is disposed at a position below the crucible and above the electrode. Providing equipment.
- the hot water leak cover can prevent the raw material melt from being applied not only to the electrodes but also to them, so that they can be taken out without being damaged.
- the fact that the electrode or the connecting portion with the electrode can be seen from the upper high temperature part such as the heat generating part in the cylindrical heater means that there is a heat conduction path there, and the radiant heat from the cylindrical heater is released below the main chamber. Means that. Therefore, the conventional manufacturing apparatus has led to deterioration of thermal efficiency, high cost, and high environmental load. However, it is possible to prevent the heat from the cylindrical heater from escaping downward by the arrangement of the hot water leak cover, and thereby it is possible to efficiently heat the raw material melt.
- the hot water leak cover may be ring-shaped. In such a case, since the hot water leak cover is disposed over the entire circumference of the crucible, the raw material melt is applied to the lower member such as an electrode wherever the raw material melt leaks from the crucible. This can be prevented. Moreover, it is possible to heat the raw material melt more efficiently.
- a hot water leak detector for detecting a hot water leak is disposed in the hot water leak tray, and the hot water leak cover has a structure for guiding the raw material melt leaking from the crucible to the hot water leak detector. Can be. If this is the case, it is possible to detect the occurrence of the hot water leak itself, to immediately respond such as turning off the power, and to quickly take effective and appropriate avoidance means.
- a heat insulating plate through which the electrode is inserted is disposed between the hot water leak tray and the hot water leak cover, and the hot water leak cover allows the raw material melt leaking from the crucible to pass through the heat insulating plate.
- the heat insulating plate may have a structure for guiding the raw material melt to the hot water leak detector disposed in the hot water leak receiving tray. If it is such, the raw material melt which leaks can be guide
- the structure for guiding the raw material melt of the hot water leak cover may be composed of a rib provided on the peripheral edge of the upper surface and a notch formed in a part of the rib. If it is such, the raw material melt can be temporarily stored on the upper surface by the rib, and the raw material melt can be easily guided out of the hot water leak cover through the notch.
- the electrode and the connecting portion between the electrode and the cylindrical heater can be protected from the raw material melt leaking from the crucible. Further, it is possible to reduce the heat from the cylindrical heater from escaping from the upper side where the crucible is disposed to the lower side, and the raw material melt can be efficiently heated.
- this single crystal production apparatus 1 includes a main chamber (pulling room) 2, a crucible 3 stored in the main chamber 2, and a cylinder arranged so as to surround the crucible 3.
- a heater -Shaped heater
- a seed chuck 7 for holding a silicon seed crystal 6, and the seed chuck 7 are pulled up.
- the wire 8 and a winding mechanism (not shown) for rotating or winding the wire 8 are provided.
- the single crystal 12 can be grown by winding a seed crystal 6 in contact with or immersed in a raw material melt (hot water: silicon melt here) 9 in the crucible 3 with a wire 8.
- the crucible 3 is provided with a quartz crucible on the inner side containing the raw material melt 9 and on the outer side with a graphite crucible.
- a heater heat insulating material 10 is installed around the outside of the heater 4.
- a hot water leak tray 13 having an internal volume capable of accommodating all molten raw materials is disposed at the bottom of the main chamber 2.
- a metal water-cooled electrode 14 is inserted from the bottom of the main chamber 2.
- the electrode 14 is connected to the heater 4 through a clamp or the like at the upper end portion, and supports the heater 4 and supplies electric power.
- the periphery of the electrode 14 and the crucible holding shaft 5 is covered with a sleeve 15. This is to protect the electrode 14 and the crucible holding shaft 5 from the leaked raw material melt when the raw material melt leaks from the crucible 3 and reaches the molten metal leak tray 13.
- a hot water leak cover 16 is disposed below the crucible 3 and above the electrode 14. Furthermore, the heat insulating plate 11 may be disposed between the hot water leak cover 16 and the hot water leak tray 13.
- the hot water leak cover 16 will be described in detail. Since the hot water leakage cover 16 is disposed between the crucible 3 and the electrode 14, even if the raw material melt 9 in the crucible 3 leaks and hangs down toward the electrode 14, it is located above the electrode 14. Only the hot water leak cover 16 is provided. It is possible to prevent the raw material melt from being applied to the electrode 14 disposed under the hot water leak cover 16 and the connecting portion between the electrode 14 and the heater 4.
- the metal electrode 14 and the connecting portion can be protected from the raw material melt, and they can be prevented from being damaged. For this reason, when taking out the heater 4, it is not necessary to destroy the connection part and the part of the heater 4 which were stuck with the raw material melt as before.
- the provision of the hot water leak cover 16 can suppress the radiant heat from the heater 4 from escaping downward in the main chamber 2. Therefore, the raw material melt in the crucible 3 can be efficiently heated, and the electric power applied during production can be reduced. For this reason, cost reduction and reduction of environmental load can be aimed at.
- the location of the hot water leak cover 16 may be any position below the crucible 3 and above the electrode 14, and the specific position is not particularly limited. For example, it is a position spaced 10 mm or more below the crucible 3 and a position spaced 10 mm or more above the electrode 14, for example, above the connecting portion between the electrode 14 and the heater 4. it can. If it is such a position, the hot water leak cover 16 will not interfere with the crucible 3, the electrode 14, the connecting portion or the like during operation, and a spark due to a short circuit can be prevented.
- the size and shape of the hot water leak cover 16 are not particularly limited. Any material having a size and shape that can protect the electrode 14 from the leaked raw material melt may be used. For example, it may be a minimum necessary size that covers only above the electrode 14, or a ring shape as shown in FIG. 2 that extends over the entire periphery of the crucible 3. .
- the crucible holding shaft 5 can be inserted into the center hole portion, and the raw material melt 9 leaks from any position of the crucible 3 disposed above. However, it can be prevented from falling down in the main chamber 2 as it is. Furthermore, since the radiant heat can be made difficult to escape downward at any position in the circumferential direction with respect to the cylindrical heater 4, the raw material melt 9 can be heated more efficiently. Moreover, heating can be performed with a uniform heat distribution in the circumferential direction of the crucible 3.
- the hot water leak cover 16 is integrated with the heat insulating plate 11 which is disposed below the hot water leak cover 16 and through which the electrode 14 is inserted.
- a member 17 having an appropriate thickness is prepared separately for adjusting the height position, the height position adjusting member 17 is placed on the heat insulating plate 11, and the hot water leak cover 16 is further provided thereon. Is placed.
- a fitting portion is appropriately formed on these members, and the fitting portions are fitted and fixed so as not to be displaced from each other.
- the heat insulating plate 11 is formed with an electrode insertion opening 22 so that the electrode 14 can be inserted.
- the hot water leak cover 16 can be made of a graphite material
- the height position adjusting member 17 can be made of a heat insulating material or a graphite material.
- the thickness of the hot water leak cover 16 and the heat insulating plate 11 and the position thereof are appropriately adjusted without using the height position adjusting member 17, so that the hot water leak cover 16 and the heat insulating plate 11 can be connected. It can also be integrated directly. It is also possible to arrange the hot water leak cover 16 and the heat insulating plate 11 separately and independently. Whether these are integrated or separately provided can be appropriately determined depending on the size of the main chamber 2 and the positional relationship with other members. The difference between the heat insulating plate 11 and the hot water leak cover 16 is whether or not the electrode 14 is covered.
- a rib 18 is provided on the upper surface of the hot water leak cover 16 along the periphery. Since such ribs 18 are provided, the raw material melt falling on the hot water leak cover 16 can be temporarily stored. A notch 19 is formed in a part of the rib 18. For this reason, the raw material melt accumulated in the region surrounded by the ribs 18 can be caused to flow further downward from the notch 19. By adjusting the position where the notch 19 is formed and arranging the hot water leak cover 16 so that the notch 19 is positioned immediately above the desired position where the raw material melt is to flow, the hot water leak cover 16 is disposed through the notch 19. The raw material melt can be guided and flowed to the desired position.
- Such a leaked raw material melt guiding structure 20 in the hot water leak cover 16 is not limited to the example of FIG. 2 and can be determined as appropriate.
- the raw material melt can be poured from there. Any structure can be used as long as the raw material melt can be guided to a desired position so as not to cover the electrode 14 and the connecting portion.
- the above guiding structure can be guided to the hot water detector 21 disposed in the hot water tray 13.
- the hot water leak tray 13 may be a container that simply contains the raw material melt leaking from the crucible 3, but in the example shown in FIG. 1, a hot water leak detector is provided so that the hot water leak can be automatically detected. 21 is further provided. If this is the case, it is possible to immediately detect an occurrence of hot water leakage and take an effective measure such as turning off the power. It is possible to always detect the temperature in the hot water receiving tray 13 by the hot water detector 21 and determine the hot water leak from the change in the detected value.
- the induction structure 20 of the above-described hot water leak cover 16 guides the raw material melt so as to flow directly in the vicinity of the hot water leak detector 21, it has conventionally flowed to the connecting member between the heater 4 and the electrode 14 or the like.
- the raw material melt can also be guided to the molten metal leak detector 21. Therefore, even if a hot water leak detector is provided, it is possible to detect a hot water leak that could not be detected because it has flowed to the connecting member or the like in the past, or it is possible to detect a hot water leak earlier than in the past. .
- the raw material melt can be guided to the heat insulating plate 11 and guided to flow in the vicinity of the hot water leak detector 21 through the heat insulating plate 11.
- the heat insulating plate 11 is preferably provided with the same guiding structure as the hot water leak cover 16. In the case of such a hot water leak cover 16 and the heat insulating plate 11, the raw material melt 9 leaked from the crucible 3 is finally guided to the hot water leak detector 21 by the guide structure 20 of the hot water leak cover 16 and the heat insulating plate 11. be able to. Therefore, it is possible to make the detection function of the hot water leak excellent.
- Example 1 A silicon single crystal was manufactured using the single crystal manufacturing apparatus 1 of the present invention provided with the graphite material hot water leak cover shown in FIG. 140 kg of silicon polycrystal was charged into a 61-cm diameter quartz crucible to dissolve the silicon polycrystal. A horizontal magnetic field was applied so that the center intensity was 0.4 T, and a seed crystal having a (001) plane was immersed in silicon melt through a silicon melt ripening step.
- the Ar flow rate was 120 L / min, and the pressure in the single crystal production apparatus was adjusted to 75 torr (9999 Pa) by providing a resistance in the exhaust pipe. After necking, the diameter was increased to a desired diameter of 200 mm, and then a boron-doped silicon single crystal having a diameter of 200 mm, in which the specific resistance as a product portion was adjusted to 10 ⁇ ⁇ cm, was grown.
- the average power consumption required for growing this silicon single crystal was investigated. The result is shown in FIG. It was 95 kW as shown in FIG. The average power consumption was less than that of a comparative example described later. This is different from the comparative example using the conventional single crystal manufacturing apparatus.
- the hot water leak cover is arranged above the electrode, and below the hot water leak cover, and further from the electrode insertion port of the heat insulating plate. It is considered that the silicon melt was efficiently heated by preventing the radiant heat of the heater from escaping under the main chamber.
- the average power consumption required for growing this silicon single crystal was 100 kW.
- the average power consumption is higher than that of the embodiment in which the present invention is implemented.
- the raw material melt was applied to the electrode or the like, but in the single crystal manufacturing apparatus 1 of the example, the electrode could be protected from the raw material melt by the hot water leak cover.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
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Abstract
Description
図4に示すように、この単結晶製造装置101は、メインチャンバー(引上げ室)102と、該メインチャンバー102内に格納されたルツボ103と、ルツボ103を囲繞するように配置された円筒状ヒータ104と、ルツボ103を回転させるルツボ保持軸105及びその回転機構(不図示)と、シリコンの種結晶106を保持するシードチャック107と、シードチャック107を引上げるワイヤ108と、ワイヤ108を回転または巻き取る巻き取り機構(不図示)を備えて構成されている。
まず、ルツボ103内でシリコンの高純度多結晶原料を融点(約1420℃)以上に加熱して融解する。そして、ワイヤ108を巻き出すことにより湯面の略中心部に種結晶106の先端を接触または浸漬させる。その後、ルツボ保持軸105を適宜の方向に回転させるとともに、ワイヤ108を回転させながら巻き取り、種結晶106を引上げることにより、単結晶の育成が開始される。以後、引上げ速度と温度を適切に調節することにより略円柱形状の単結晶棒112を得ることができる。
また、多結晶原料投入時にルツボ103内の湯がルツボ103の周囲に飛散することもある。さらに使用により徐々にルツボ103が劣化したり、引上げ中の単結晶112が落下した場合には、ルツボ103が破壊されて湯のほぼ全量が流出してしまう危険性もある。
前記ルツボから漏れてくる原料融液が前記電極にかかるのを防ぐ湯漏れカバーが、前記ルツボの下方かつ前記電極より上方の位置に配設されているものであることを特徴とする単結晶製造装置を提供する。
また、従来の単結晶製造装置においては原料融液が円筒状ヒータと電極の連結部分に侵入して固着すると、その後に円筒状ヒータを取り外すことができなくなるため、円筒状ヒータや連結部分を破壊して取り出していた。しかしながら、湯漏れカバーによって、電極のみならずこれらにも原料融液がかかるのを防ぐことができるため、これらを破損せずに取り出すことが可能となる。
このようなものであれば、ルツボの全周囲にわたって湯漏れカバーが配設されることになるので、原料融液がルツボから漏れる位置がどこであっても電極等、下方の部材に原料融液がかかるのを防止することができる。また、原料融液をより効率良く加熱することが可能である。
このようなものであれば、湯漏れの発生自体を検出することができ、切電する等の即応ができ、有効で適切な回避手段を迅速にとることが可能である。
このようなものであれば、漏れてくる原料融液を電極ではなく断熱板に誘導することができ、原料融液が電極にかかるのをより確実に防ぐことができる。
また、断熱板によって上方からの熱を下方へ逃すのを防ぐことができ、原料融液の加熱をさらに効率的に行うことができる。
そして、断熱板から湯漏れ検出器へ原料融液を誘導することができ、湯漏れの発生自体を検出することができる。
このようなものであれば、リブによって原料融液を上表面に一時的に溜めることができ、しかも切り欠きを通して湯漏れカバーの外へ簡便に原料融液を誘導することができる。
図1に、本発明の単結晶製造装置の一例の概略を示す。CZ法によって単結晶(例えばシリコン単結晶)を製造するための装置である。
図1に示すように、この単結晶製造装置1は、まず、メインチャンバー(引上げ室)2と、該メインチャンバー2内に格納されたルツボ3と、ルツボ3を囲繞するように配置された円筒状ヒータ(以下、単にヒータという)4と、ルツボ3を回転させるルツボ保持軸5及びその回転機構(不図示)と、シリコンの種結晶6を保持するシードチャック7と、シードチャック7を引上げるワイヤ8と、ワイヤ8を回転または巻き取る巻き取り機構(不図示)を備えて構成されている。単結晶12はルツボ3中の原料融液(湯:ここではシリコン融液)9に接触または浸漬させた種結晶6をワイヤ8で巻き上げることにより育成することができる。
また、メインチャンバー2の底には全溶融原料を収容可能な内容積を有する湯漏れ受け皿13が配設されている。
また、メインチャンバー2の底から金属製の水冷された電極14が挿入されている。この電極14は、上端部でクランプなどを介してヒータ4と連結されており、ヒータ4を支えているとともに電力を供給する役割を担っている。
電極14やルツボ保持軸5はスリーブ15によってそれらの周囲が覆われている。ルツボ3から原料融液が漏れて湯漏れ受け皿13まで到達した場合に、その漏れた原料融液から電極14やルツボ保持軸5を保護するためである。
ここで、湯漏れカバー16について詳述する。
ルツボ3と電極14の間に湯漏れカバー16が配設されているため、ルツボ3中の原料融液9が漏れて、電極14に向かって垂れてきても、電極14よりも上方の位置に配設されている湯漏れカバー16にかかるだけである。湯漏れカバー16の下に配置されている電極14や、電極14とヒータ4との連結部分に原料融液がかかるのを防ぐことができる。このように原料融液から金属製の電極14や連結部分等を保護することができ、それらが損傷するのを防ぐことができる。このため、ヒータ4を取り出す際に、従来のように原料融液がかかって固着してしまった連結部分やヒータ4の一部を破壊する必要もない。
図2に示すように断熱板11には電極挿通口22が形成されており、電極14が挿通可能な構造となっている。
湯漏れカバー16は黒鉛材、高さ位置調整用部材17は断熱材または黒鉛材からなるものとすることができる。
また、湯漏れカバー16と断熱板11とを別個独立して配設することも可能である。
これらを一体化して配設するか、別個独立して配設するか等はメインチャンバー2の大きさや他の部材との位置関係等により適宜決定することができる。
これら断熱板11と湯漏れカバー16との違いは電極14の上方を覆うか否かにある。
そして該リブ18の一部には切り欠き19が形成されている。このため、リブ18で囲まれた領域内に溜まっている原料融液を切り欠き19からさらに下方へ流すことができる。該切り欠き19の形成位置を調整するとともに、原料融液を流そうとする所望の位置の直上に切り欠き19が位置するようにして湯漏れカバー16を配設することで、切り欠き19を通してその所望の位置に原料融液を誘導して流すことができる。
電極14や連結部分等にかからないように原料融液を所望の位置に誘導できる構造であれば良い。
このような湯漏れカバー16や断熱板11であれば、ルツボ3から漏れた原料融液9を、湯漏れカバー16および断熱板11の誘導構造20によって最終的に湯漏れ検出器21へ誘導することができる。したがって、やはり湯漏れの検出機能が優れたものとすることができる。
(実施例)
図1に示す黒鉛材の湯漏れカバーを設置した本発明の単結晶製造装置1を用いてシリコン単結晶を製造した。
140kgのシリコン多結晶を直径61cmの石英ルツボにチャージし、シリコン多結晶を溶解した。水平磁場を中心強度が0.4Tとなるように印加し、シリコンメルトの熟成工程を経て、(001)面を有する種結晶をシリコンメルトに浸した。
このときのAr流量は120L/min、単結晶製造装置内の圧力は排気管に抵抗を設けることにより75torr(9999Pa)に調整した。ネッキング後に所望の直径200mmまで拡径させ、その後、製品部である定径の比抵抗が10Ω・cmに調整されたボロンドープの直径200mmのシリコン単結晶を育成した。
湯漏れカバーが配設されていない図4に示す従来の単結晶製造装置101を用いてシリコン単結晶を製造した。
他の操業条件については実施例と同様とした。
Claims (5)
- 原料融液を収容するルツボと、該ルツボを囲繞して原料融液を加熱する円筒状ヒータと、これらを格納するメインチャンバーと、該メインチャンバーの底から挿入されて前記円筒状ヒータを支持するとともに電力を供給する電極と、前記メインチャンバーの底に配設されて前記ルツボから漏れてくる原料融液を収容する湯漏れ受け皿とを具備したチョクラルスキー法による単結晶製造装置であって、
前記ルツボから漏れてくる原料融液が前記電極にかかるのを防ぐ湯漏れカバーが、前記ルツボの下方かつ前記電極より上方の位置に配設されているものであることを特徴とする単結晶製造装置。 - 前記湯漏れカバーはリング状のものであることを特徴とする請求項1に記載の単結晶製造装置。
- 前記湯漏れ受け皿に湯漏れを検出する湯漏れ検出器が配設されており、
前記湯漏れカバーは、前記ルツボから漏れてくる原料融液を前記湯漏れ検出器に誘導する構造を有するものであることを特徴とする請求項1または請求項2に記載の単結晶製造装置。 - 前記湯漏れ受け皿と前記湯漏れカバーの間には、前記電極が挿通された断熱板が配設されており、
前記湯漏れカバーは、前記ルツボから漏れてくる原料融液を前記断熱板に誘導する構造を有し、該断熱板が前記湯漏れ受け皿に配設された湯漏れ検出器に原料融液を誘導する構造を有するものであることを特徴とする請求項1から請求項3のいずれか一項に記載の単結晶製造装置。 - 前記湯漏れカバーの原料融液を誘導する構造は、上表面の周縁に設けられたリブと、該リブの一部に形成された切り欠きからなるものであることを特徴とする請求項3または請求項4に記載の単結晶製造装置。
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JP2002137997A (ja) * | 2000-10-31 | 2002-05-14 | Super Silicon Kenkyusho:Kk | 単結晶引き上げ装置 |
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