WO2013165052A1 - Conditionnement de capteur et procédé de fabrication pour celui-ci - Google Patents

Conditionnement de capteur et procédé de fabrication pour celui-ci Download PDF

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Publication number
WO2013165052A1
WO2013165052A1 PCT/KR2012/005830 KR2012005830W WO2013165052A1 WO 2013165052 A1 WO2013165052 A1 WO 2013165052A1 KR 2012005830 W KR2012005830 W KR 2012005830W WO 2013165052 A1 WO2013165052 A1 WO 2013165052A1
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WIPO (PCT)
Prior art keywords
hole
cover
sound
substrate
sensor package
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PCT/KR2012/005830
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English (en)
Korean (ko)
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김태원
김성민
최지원
박경원
노경환
Original Assignee
주식회사 파트론
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Publication of WO2013165052A1 publication Critical patent/WO2013165052A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L2924/161—Cap
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    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
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    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate

Abstract

La présente invention concerne un conditionnement de capteur et un procédé de fabrication pour celui-ci. Le conditionnement de capteur comprend une couverture de type boîte, un substrat sur lequel un transducteur de système micro-électromécanique (MEMS) et un dispositif de circuit semi-conducteur sont montés, et un élément empêchant un flux entrant de substance étrangère. La couverture est faite d'une matière métallique en une seule couche et a un trou acoustique ou un trou de pression pour recevoir un signal acoustique ou un signal de pression sonore sur une surface latérale supérieure de celle-ci. L'élément empêchant un flux rentrant de substance étrangère recouvre le trou acoustique ou le trou de pression en étant fixé à la surface intérieure supérieure de la couverture de manière à empêcher une substance étrangère de s'écouler à travers le trou acoustique ou le trou de pression. Selon la présente invention, du fait que l'élément empêchant un flux entrant de substance étrangère est disposé à la surface intérieure supérieure de la couverture, le flux entrant d'une substance étrangère depuis le trou acoustique ou le trou de pression peut être empêché, un procédé de fabrication est simplifié, une production en masse et automatisée est possible. De plus, il est également possible d'empêcher un endommagement de l'élément empêchant un flux entrant de substance étrangère dû à des températures élevées durant un processus subséquent de soudage par refusion, et de rendre minimale une dégradation de sensibilité d'un signal acoustique ou d'un signal de pression sonore.
PCT/KR2012/005830 2012-04-30 2012-07-20 Conditionnement de capteur et procédé de fabrication pour celui-ci WO2013165052A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120045188A KR101224448B1 (ko) 2012-04-30 2012-04-30 센서 패키지 및 그의 제조 방법
KR10-2012-0045188 2012-04-30

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WO2013165052A1 true WO2013165052A1 (fr) 2013-11-07

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WO (1) WO2013165052A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108529551A (zh) * 2017-03-02 2018-09-14 罗伯特·博世有限公司 气压传感器及其封装方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101320574B1 (ko) 2011-11-30 2013-10-23 주식회사 비에스이 멤스 마이크로폰
KR101502929B1 (ko) * 2013-08-19 2015-03-16 주식회사 휘닉스소재 흑화처리된 mems 마이크로폰용 케이스 및 그 제조방법
KR101559154B1 (ko) * 2014-03-14 2015-10-12 (주)파트론 압력센서 패키지 및 그 제조 방법
KR101783432B1 (ko) * 2016-04-18 2017-09-29 양기웅 마이크로폰 및 음향 처리 방법
CN110958506A (zh) 2018-09-27 2020-04-03 北京小米移动软件有限公司 麦克风模组、电子设备
CN114501252B (zh) * 2022-01-25 2023-11-17 青岛歌尔智能传感器有限公司 振动组件及其制备方法、骨声纹传感器及电子设备

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KR100675027B1 (ko) * 2005-08-10 2007-01-30 주식회사 비에스이 실리콘 콘덴서 마이크로폰 및 이를 위한 실장 방법
KR100925558B1 (ko) * 2007-10-18 2009-11-05 주식회사 비에스이 멤스 마이크로폰 패키지
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KR100675027B1 (ko) * 2005-08-10 2007-01-30 주식회사 비에스이 실리콘 콘덴서 마이크로폰 및 이를 위한 실장 방법
KR200415820Y1 (ko) * 2006-02-13 2006-05-08 주식회사 씨에스티 마이크로폰 조립체
KR100925558B1 (ko) * 2007-10-18 2009-11-05 주식회사 비에스이 멤스 마이크로폰 패키지
KR20110072991A (ko) * 2009-12-23 2011-06-29 주식회사 씨에스티 음/전 변환 패키지

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108529551A (zh) * 2017-03-02 2018-09-14 罗伯特·博世有限公司 气压传感器及其封装方法

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