WO2013159664A1 - 一种白光led发光装置及制备方法 - Google Patents

一种白光led发光装置及制备方法 Download PDF

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Publication number
WO2013159664A1
WO2013159664A1 PCT/CN2013/074277 CN2013074277W WO2013159664A1 WO 2013159664 A1 WO2013159664 A1 WO 2013159664A1 CN 2013074277 W CN2013074277 W CN 2013074277W WO 2013159664 A1 WO2013159664 A1 WO 2013159664A1
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WO
WIPO (PCT)
Prior art keywords
glass
phosphor
light
led
coating
Prior art date
Application number
PCT/CN2013/074277
Other languages
English (en)
French (fr)
Inventor
钱志强
金正武
殷江
Original Assignee
Qian Zhiqiang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201210125776.7A external-priority patent/CN102633440B/zh
Priority claimed from CN2012101271904A external-priority patent/CN102646674A/zh
Priority claimed from CN201210294570.7A external-priority patent/CN102945914B/zh
Priority claimed from CN2012105129518A external-priority patent/CN102945918A/zh
Priority claimed from CN201310006398.5A external-priority patent/CN103078048B/zh
Application filed by Qian Zhiqiang filed Critical Qian Zhiqiang
Publication of WO2013159664A1 publication Critical patent/WO2013159664A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02—Combinations of only two kinds of elements
    • F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
    • F21V3/10—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings
    • F21V3/12—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings the coatings comprising photoluminescent substances
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/28—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings
    • F21V7/30—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings the coatings comprising photoluminescent substances
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/38—Combination of two or more photoluminescent elements of different materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
    • F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2113/00—Combination of light sources
    • F21Y2113/10—Combination of light sources of different colours
    • F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Definitions

  • the present invention relates to illumination devices, and more particularly to white LED illumination devices.
  • white LED has the advantages of energy saving, environmental protection and long life. It is based on the following working principle: LED blue light chip emits blue light to illuminate phosphor (phosphor), and the phosphor is excited by blue light to emit yellow light, or A mixture of green and red light, or a mixture of yellow and red light. These phosphors are combined with the blue light emitted by the blue chip to synthesize white light.
  • phosphor phosphor
  • the white light emitting device of CN200710079928 includes a blue LED and a mixture of an orange light body and a green light body disposed on the blue LED.
  • the existing phosphor is uniformly cured on the surface of the chip by silica gel or resin mixing.
  • This packaging method has its inherent disadvantages, as follows: The phosphor particles reflect a part of the light entering the blue chip, which affects the light effect of the light-emitting device; the blue light emitted by the LED chip or the resin will turn yellow after being irradiated for a long time by the LED chip, affecting The light effect of the light-emitting device; the heat of the device does not flow to cause the operating temperature of the device to rise, causing the wavelength of the phosphor to drift; the resin has gas permeability, resulting in a sulfide phosphor, or an aluminate phosphor, or silicic acid.
  • Salt phosphors react with gases in the air (such as acid gases) to cause performance degradation; sulfide phosphors, or aluminate phosphors, or silicate phosphors also react with moisture in the air to cause performance degradation. .
  • red phosphor In order to improve the color rendering index of LED light-emitting devices, an appropriate amount of red phosphor is added to the yellow phosphor of an ordinary white LED to increase its color rendering index, or a three-primary phosphor (green phosphor + red phosphor) is used. To improve its color rendering index. Since the efficacy of green phosphors and red phosphors is generally low, the efficacy of light-emitting devices is degraded.
  • CN102301176 A Illumination system with remote peculiar layer/or scattering layer A remote light film has been disclosed which has a "sandwich” type structure, the so-called “remote excitation technique". Such a multilayer film structure is liable to fall off after long-term use in a light-emitting device, and the stability is poor.
  • CN101711435 A A lighting device having a wavelength converting element held by an open support structure discloses a transparent or translucent luminescent ceramic sheet for remote excitation. This ceramic sheet is obtained by a high temperature and high pressure solid phase synthesis process, and the cost is too high, which is disadvantageous for mass production.
  • the area of the blue chip and the area of the light conversion component may be greatly different. Therefore, the blue light flux received per unit area of the light conversion component may be greatly different, and it is difficult to complete the wavelength conversion of the entire light conversion component.
  • the white light obtained after the light mixing has the same quality (such as color temperature and color rendering index, etc.).
  • secondary optical design such as a street lamp
  • the present invention also provides a method for producing a glass coating comprising a phosphor, wherein a glass coating comprising a phosphor is fabricated on a glass substrate to effectively solve the device light appearing in the above-mentioned light emitting device manufactured by the conventional LED packaging process. Decreased effect and fluorescence Problems such as deterioration of bulk luminescence characteristics.
  • the present invention also provides a light-emitting device containing the glass coating layer and a method of manufacturing the same; and, in order to obtain a high color rendering index of the light-emitting device, high light efficiency can be obtained; and the uniformity of light emitted by the light-emitting device is greatly improved. Effectively; effectively enlarge the light-irradiated area of the illuminating device.
  • the present invention provides a white LED illumination device:
  • the white LED illumination device comprises: a base, a blue LED chip, a reflector and a glass substrate, wherein the two ends of the reflector are respectively connected to the base and the glass substrate, the blue LED chip is disposed on a side of the base facing the glass substrate, and the electrode lead of the blue LED chip Passing through the base, a surface of the glass substrate is coated with a phosphor-containing glass coating.
  • the refractive index of the fluorescent glass coating is less than the refractive index of the glass substrate, the glass substrate is coated with the glass coated side toward the base, when the glass When the refractive index of the coating is greater than the refractive index of the glass substrate, the side of the glass substrate not coated with the fluorescent glass coating faces the base.
  • the refractive index of the fluorescent glass coating is greater than the refractive index of the glass substrate, the side of the glass substrate having no fluorescent glass coating faces the base to improve the white light extraction efficiency of the light emitting device.
  • the phosphor is an LED yellow phosphor; a mixture of LED green phosphor and LED red phosphor in any ratio or a mixture of LED yellow phosphor and LED red phosphor in any ratio.
  • the illuminating color or color temperature can be adjusted by adjusting the proportion of the phosphor, and the LED light of the full color temperature range can be obtained by adjusting the ratio.
  • the glass coating containing the phosphor is a two-layer coating structure, and the coating thickness of each layer is from 3 micrometers to 5 millimeters.
  • the phosphors of the above two-layer coating structure are LED green phosphor and LED red phosphor, respectively, or LED yellow phosphor and LED red phosphor, respectively.
  • the reflective surface of the reflector is coated with a metal film.
  • the reflector has a cylindrical shape, and the base and the glass substrate respectively serve as two bottom surfaces of the cylindrical shape; the reflector has a rounded table shape or a bowl shape, the base serves as a bottom or a bottom of the round table, and the glass substrate serves as a rounded table.
  • the bottom cover or the position at the mouth of the bowl; the reflector is in the shape of a rectangular parallelepiped or a chamfered base, the base is a lower base of the rectangular parallelepiped or a lower base of the chamfered plate, and the glass substrate is used as a lower base of the rectangular parallelepiped or a top cover of the chamfered roof;
  • the semi-cylindrical shape is arranged along a straight line which is parallel to the rectangular surface of the semi-cylindrical shape, and the straight line falls in a plane passing through the column axis and perpendicular to the rectangular surface of the semi-cylindrical shape, and the glass substrate serves as a semi-cylindrical rectangular surface.
  • the reflector is semi-cylindrical, and the base is disposed along a straight line parallel to the semi-cylindrical rectangular surface, and the straight line falls in a plane perpendicular to the semi-circular rectangular surface passing through the column axis, cylindrical type a glass substrate as a semi-cylindrical cover;
  • the base is disposed along a straight line that coincides with the focal line of the paraboloid, and the cylindrical glass substrate serves as a cover for the semi-cylindrical reflector;
  • the reflector is in the form of a slender rectangular or elongated chamfered base, the base being a slender rectangular or elongated chamfer-shaped lower base, and the cylindrical glass substrate is an elongated rectangular or chamfered cover.
  • An adapter plate or an adapter ring is disposed between the reflector and the transparent substrate.
  • the glass substrate A is curved, the outline of the cross section is a part of a circular arc, or a part of a parabola, or a hyperbola, or other arc; or the glass substrate A is a spherical surface, a hyperboloid, an elliptical surface, an oval A faceted or parabolic convex sheet or cylindrical type.
  • the LED chip may be a blue chip grown on a gemstone (A1 2 0 3 ) substrate, a blue chip grown on a SiC substrate, or a blue chip grown on a Si substrate, or in the above three substrates. Any one of them is transferred onto other substrates after growth.
  • the LED blue chip 4 can use a single LED chip, and can also use multiple or multiple sets of LED chips, the purpose of which is to provide a blue light source.
  • the blue LED chip may be a single chip or a chipset, and multiple chips may be connected in series or in parallel or mixed.
  • the electrodes can be taken out in other ways.
  • the white LED light-emitting device further includes a lens, and a plane of the lens closely fits the glass substrate.
  • the above lens has a hemispherical shape, a hemispherical shape, a semi-cylindrical shape, or a similar semi-cylindrical shape.
  • the lens is made of a glass material, or an acrylic material, or any other transparent solid material.
  • one plane of the lens and the glass substrate are closely adhered by using a silica gel or a resin material.
  • the base has a heat dissipation function and is made of aluminum or ceramic.
  • the improved white LED lighting device comprises: a base, a blue LED chip set and a red LED chip set, a reflector and a glass substrate; the two ends of the reflector (upper end and lower end or front end and rear end) respectively The base and the glass substrate are connected, the blue LED chip set and the red LED chip set are disposed on the base, facing one side of the wavelength conversion component, and the electrode leads of the blue LED chip set and the red LED chip set pass through the base.
  • the phosphor-containing glass coating is provided on one side of the glass substrate facing the LED blue chip and the red light emitting light, or on the other side.
  • one side of the glass substrate is coated with a glass coating containing a phosphor.
  • the phosphor contained in the glass coating layer is any kind of LED yellow phosphor (such as YAG yellow phosphor or silicate yellow phosphor); a mixture of LED green phosphor and LED red phosphor in any ratio.
  • the glass substrate may have various physical shapes such as a flat type, a spherical type, a parabolic type, a cylindrical type, a hyperboloid type, or an arbitrary curved surface type.
  • the LED blue chip may be a blue chip grown on a gemstone (A1 2 0 3 ) substrate, or a blue chip grown on a SiC substrate, or a blue chip grown on a Si substrate, or Any of the three substrates is grown and transferred to other substrates.
  • the red LED chip includes a III/V compound semiconductor red chip (such as InGa, A1P) and its derivatives.
  • the blue LED chip and the red LED chip are a series of chips connected in series, parallel or mixed; the luminous flux of the red light emitted by the red LED chip and the red light emitted by the red LED chip are generated by the blue LED chip. 5% ⁇ 25% ⁇ The ratio of the sum of the luminous flux of the blue light is 0. 5% ⁇ 25%.
  • the glass substrate and the base are curved, and the outline of the cross section is a circular arc, a parabola, a hyperbola, an ellipse or a part of any arc.
  • the glass substrate and the base are convex plates of a spherical surface, a hyperboloid, an elliptical surface, an oval surface or a paraboloid or a cylindrical type plate.
  • the secondary optical design is not required to increase the illumination range of the light, and uniform illumination is obtained.
  • the invention comprises a glass coating and preparation of a phosphor:
  • the sintering process is: heating to a temperature Dl, after the decomposition of the binder is completely evaporated, and then heating to a temperature D2, the glass B powder is softened, combined to form a continuous glass body, and the surface of the glass substrate A is fluorescent.
  • the glass coating of the body C has a temperature D1 lower than the glass transition temperature of the glass B, and the temperature D2 is lower than the glass transition temperature of the glass A by 10 °C or more.
  • the temperature D1 is not lower than the decomposition vaporization temperature of the binder, and the temperature D2 is not lower than the glass transition temperature of the glass B.
  • the mass ratio of the organic solvent to the binder is 10: 1-10: 10, wherein the organic solvent is butyl carbitol phthalate, phthalate, polyvinyl alcohol , one of terpineol, 2,2,4-trimethyl-1, 3-pentanediol monoisobutyrate or a mixture of two kinds in any ratio;
  • the binder is one of an acrylic resin, a styrene resin, an ethyl cellulose, a phenol resin or a butyral resin or a mixture of any two of them in any ratio. More preferred is ethyl cellulose and/or butyral resin. More preferably, the ratio of the mass of the organic solvent to the binder to the mass of the glass B powder is 1:10 to 1:3, and most preferably 1:5 to 1:4.
  • step (1) Method for selecting organic solvent and binder in step (1) (including determination of variety and amount) and selecting organic solvent and binder when preparing paste-like sealing composition for glass powder used for sealing in the prior art
  • the method is the same.
  • the "paste” is a well-known term, especially a viscous state that does not self-flow under a substantially horizontal state.
  • the glass transition temperature and softening temperature of the glass are determined by differential thermal analysis (DSC).
  • DSC differential thermal analysis
  • the heating rate during the general test is 10 °C/min.
  • the surface of the glass substrate is coated with a SiO 2 film, and the paste is uniformly coated on the SiO 2 film. Coating a layer of SiO 2 on the glass A substrate prevents diffusion of the glass A and glass B components during sintering.
  • the SiO 2 film may be coated by a chemical method such as a sol-gel method or a physical method such as a sputtering method.
  • the method further includes the step (4): after the end of the step (3), the temperature is lowered to room temperature, the phosphor C is replaced with the phosphor D, and the steps (1) to (3) are repeated, and the surface of the glass substrate A is sequentially contained.
  • the glass coating of phosphor C and the glass coating of phosphor D has a thickness of 3 to 5 mm.
  • the surface of the glass substrate A has a two-layer glass coating structure, as shown in Fig. 21.
  • the phosphor C and the phosphor D may be LED yellow phosphor, or LED green phosphor, or LED red phosphor, but the phosphor C and the phosphor D are different.
  • the glass powder used in the preparation of the glass coating containing the phosphor C and the phosphor D may be the same or different, preferably the same material; when the materials are different, the glass powder for the two glass coatings Both need to meet the aforementioned requirements for glass B.
  • the temperature is raised to the temperature D2 in 10 minutes to 10 hours; the temperature is raised to the temperature D2, the glass B is softened, and the phosphor C is obtained on the surface of the glass substrate. After the glass coating, the temperature was lowered to room temperature in 20 minutes to 10 hours.
  • the decomposition of the binder and the softening of the glass B in the step (3) should not occur in the step (2), that is, the drying temperature in the step (2) should be lower than the decomposition and volatilization temperature of the binder.
  • a transparent phosphor-containing glass coating can be successfully obtained on the surface of the glass substrate A by the stepwise temperature-increasing sintering method in the step (3), which has a smooth surface and no warp at the edges. If the coating is directly heated to the softening temperature of the glass B for sintering, since the binder does not decompose and volatilize, pores are formed in the coating to break the uniformity of the coating.
  • the glass substrate A may be an alkali glass, an alkali-free glass, a quartz glass or the like, or a frosted glass prepared using an alkali glass, an alkali-free glass or a quartz glass.
  • glass substrate A and glass B should have a matching coefficient of thermal expansion to avoid cracking after sintering.
  • the glass B is preferably a Si0 2 -Nb 2 0 5 system, a B 2 0 3 -F system, a P 2 0 5 -ZnO system, a P 2 0 5 -F system, a Si0 2 -B 2 0 3 -La 2 0 3 system or Low-melting glass such as Si0 2 -B 2 0 3 system.
  • the phosphor C may be an LED yellow phosphor.
  • the phosphor may also be a mixture of LED green phosphor and LED red phosphor, or a mixture of LED yellow phosphor and a small amount of LED red phosphor.
  • Phosphor C can be selected by those skilled in the art according to actual needs.
  • the powder of the glass B and the phosphor has a particle size of between 3 micrometers and 60 micrometers to obtain a uniform sealing effect.
  • the drying temperature in the step (2) is from 50 ° C to 250 ° C.
  • the thickness of the glass coating containing the phosphor C is from 3 micrometers to 5 millimeters, and the thickness of the glass coating layer can be determined by those skilled in the art according to the quality requirements of the obtained white light. If the glass coating layer is too thin, the coating layer contains Too little phosphor, LED blue The proportion of white light emitted by the optical chip by the phosphor is small, and the quality of the final synthesized white light is poor (the color temperature is too high). If the coating is too thick, the blue light emitted by the LED blue chip is converted to a higher proportion of white light by the phosphor, and the resulting white light is of poor quality (the color temperature is too low).
  • the speed of the rise and fall of the present invention can be determined in combination with the prior art, depending on the specific conditions (e.g., the materials of the glass A, B, etc.), especially with reference to the related art in the field of glass sealing technology.
  • the temperature is raised to the temperature D2 in 10 minutes to 10 hours; the temperature is raised to the temperature D2, the glass B is softened, and the phosphor-containing body is obtained on the surface of the glass substrate A.
  • the temperature is lowered to room temperature in 20 minutes to 10 hours.
  • the glass coating layer may be one layer or two layers.
  • the light emitting device comprises an LED chip and a glass substrate A on the LED chip.
  • the organic solvent and binder are as described above.
  • FIG. 22 is a schematic structural view of a light-emitting device obtained according to the manufacturing method:
  • the light emitting device comprises a heat sink 127, an LED blue chip 128, an electrode lead 131 of the chip, electrodes 129 and 130, a light reflecting device 132, and a glass substrate A 135 coated with a phosphor B of glass B 136.
  • the LED blue chip 128 may be a blue chip grown on a gemstone (A1 2 0 3 ) substrate, a blue chip grown on a SiC substrate, or a blue chip grown on a Si substrate, or in the above three types. Any one of the substrates is grown and transferred to other substrates.
  • the LED blue chip 128 can use a single LED chip, and can also use multiple or multiple sets of LED chips, the purpose of which is to provide a blue light source.
  • the LED blue chip 128 is powered by the electrodes 129 and 130, and the LED blue chip 128 emits blue light, as shown at 133 in FIG.
  • the light reflecting means 132 functions to concentrate the light from the LED blue chip 128 onto the phosphor-containing glass coating thereon.
  • the light reflecting means 132 of the light-emitting device can also be designed in other shapes within the scope of not impairing the object of the present invention, and its function is to concentrate the light emitted from the blue chip onto the phosphor-containing glass coating thereon.
  • the blue light emitted by the LED blue chip 128 excites the phosphor C 137 in the B coating, and the phosphor emits yellow light, or green light, or red light, or a mixed light of two of the above three kinds of light.
  • the light emitted by the specific phosphor depends on the composition of the phosphor C 137 .
  • the blue light emitted by the LED blue chip 128 is mixed with the light emitted by the phosphor C 137 to emit white light, as shown by 134 in FIG.
  • the refractive index n A of the glass A is larger than the refractive index n B of the glass B, the light 133 emitted by the phosphor C excited by the blue light emitted from the blue chip 128 does not reflect at the interface between the glass A and the glass B. .
  • the refractive index n A of the glass A is smaller than the refractive index n B of the glass B, the light emitted by the phosphor C excited by the blue light emitted from the blue chip 128 will be reflected at the interface of the glass A and the glass B, and the difference is greater. The more light that is reflected. At this time, it is necessary to greet the uncoated side of the glass substrate A with the incident light 133 of the LED blue chip 128, as shown in FIG. 23, to improve the light-emitting efficiency of the light-emitting device.
  • a phosphor-containing two-layer glass-coated glass substrate shown in Fig. 24 can also be used. In the manufacture of such a light-emitting device, the above measures are also taken.
  • the coating sequence of the two-layer coating has an effect on the light-emitting quality of the light-emitting device, but this effect can be corrected by adjusting the coating thicknesses of the first coating layer 1 and the second coating layer 2. Taking the direction in which the coated side of the glass substrate A faces the LED blue chip as an example, adjusting the thicknesses of the first coating layer 1 and the second coating layer 2 is illustrated in accordance with the schematic diagram 24. As shown in FIG.
  • the order of manufacturing the first coating 1 and the second coating 2 is as shown in FIG. To complete; if the first coating 1 is excited by blue light to emit red light, and the second coating 2 is excited by blue light to emit green light, then the second coating 2 The green light portion excited by the blue light is absorbed by the phosphor C in the first coating layer 1 to emit red light again. Thus, the ratio of the total intensity of the blue, green, and red light in the mixed light 134 changes. In order not to deteriorate the light-emitting quality of the light-emitting device, the thickness of the coating layer 2 may be appropriately increased to adjust the proportion of green light in the mixed light to improve the light-emitting quality of the device.
  • a modification of the glass coating and preparation of the above phosphor after the optical wavelength conversion fluorescent glass coating is sintered, the mixed layer of the phosphor C and the glass B powder is completed, and then the surface of the coating is coated with S i 0 2 or Zrf .
  • the glass coating containing the phosphor according to the present invention may have a two-layer coating structure.
  • the organic solvent and binder used in the preparation of the coating 1 and the coating 2 are identical to the organic solvent and the binder described in the step (1).
  • the phosphor C and the phosphor D in the coating layer 1 and the coating layer 2 may be an LED yellow phosphor, or an LED green phosphor, or an LED red phosphor, but the phosphor C and the phosphor D are different.
  • the preparation methods of the coating 1 and the coating 2 are in accordance with the above coating preparation method.
  • the coating sequence of the two-layer coating has an effect on the light-emitting quality of the light-emitting device, but this effect can be corrected by adjusting the coating thicknesses of the first coating layer 1 and the second coating layer 2.
  • the present invention refers to the following Chinese application as a priority of the present invention: 201210127190. 4, 201210125776.
  • the surface of the LED blue chip is not coated with phosphor-containing silica gel or resin, so the heat dissipation problem is greatly alleviated, and the light-efficiency of the device caused by the yellowing of the silica gel or the resin in the LED light-emitting device packaged by the conventional technology can be avoided. .
  • the phosphor is sealed by the glass, and the problem of deterioration of the light-emitting characteristics caused by the reaction of the phosphor with the acid gas or the moisture in the air can be eliminated.
  • the glass substrate containing the fluorescent glass coating in the light-emitting device is far away from the LED blue chip, the ambient temperature of the phosphor is low, and the heat dissipation problem of the light-emitting device chip is effectively alleviated, so that the wavelength drift of the phosphor due to the heat dissipation problem of the device does not occur. Also, problems such as deterioration in luminescence performance due to high operating temperature of the device do not occur.
  • a red light chip is symmetrically distributed around the blue chip, and the red light emitted by the red light chip can supplement the red light component missing from the white light obtained by the combination of the blue chip and the yellow phosphor, so that the white light color index obtained by the light emitting device is higher.
  • the red light chip since the red light chip has high light efficiency, the light effect of the light-emitting device in the present invention is higher than that obtained by using a blue chip plus a three-primary phosphor or a yellow phosphor plus a red phosphor to obtain a warm white light device.
  • a uniform white light is obtained by using a blue light source uniformly distributed on the curved surface and a light-converting coating having a curved shape, and the white light irradiation region can be effectively enlarged; the light-emitting device can obtain a large area uniform without requiring a secondary optical design. illumination.
  • FIG. 1 is a schematic view showing a white LED light-emitting device according to a first embodiment of the present invention.
  • Fig. 2 is a schematic view showing a white LED light-emitting device according to a second embodiment of the present invention.
  • Fig. 3 is a schematic view showing a white LED light-emitting device according to a third embodiment of the present invention.
  • FIG. 4 is a schematic view of a white LED light emitting device according to Embodiment 4 of the present invention.
  • Fig. 5 is a schematic view showing a white LED light-emitting device according to a fifth embodiment of the present invention.
  • Fig. 6 is a schematic view showing a white LED light-emitting device of Embodiment 6 of the present invention.
  • Fig. 7 is a schematic view showing a white LED light-emitting device of Embodiment 7 of the present invention.
  • Fig. 8 is a schematic view showing a white LED light-emitting device according to Embodiment 8 of the present invention.
  • FIG. 9 is a schematic view of a white LED lighting device in accordance with a ninth embodiment of the present invention.
  • FIG. 10 is a schematic diagram of a white LED light emitting device according to Embodiment 10 of the present invention.
  • Figure 11 is a schematic view of a white LED light-emitting device according to Embodiment 11 of the present invention.
  • Figure 12 is a schematic view of a white LED light emitting device according to Embodiment 12 of the present invention.
  • Figure 13 is a schematic view of a white LED light-emitting device according to Embodiment 13 of the present invention.
  • Figure 14 is a schematic view of a white LED light-emitting device according to Embodiment 14 of the present invention.
  • Figure 15 is a schematic view of a white LED light-emitting device according to Embodiment 15 of the present invention.
  • Figure 16 is a schematic view of a white LED light-emitting device according to Embodiment 16 of the present invention.
  • Figure 17 is a schematic view of a white LED light-emitting device according to Embodiment 17 of the present invention.
  • Figure 18 is a schematic view of a white LED light-emitting device according to Embodiment 18 of the present invention.
  • Figure 19 is a schematic view of a white LED light-emitting device according to Embodiment 19 of the present invention.
  • Figure 20 is a schematic diagram of a white LED light-emitting device of Embodiment 20 of the present invention.
  • Figure 21 is a schematic view showing the structure of a multilayer glass coating comprising a phosphor.
  • Fig. 22 is a view showing the structure of a white LED light-emitting device manufactured using a glass substrate containing a phosphor-coated glass.
  • Figure 23 is a schematic view showing the structure of a white LED light-emitting device manufactured when the refractive index n A of the glass A is smaller than the refractive index n B of the glass B containing the phosphor.
  • Fig. 24 is a view showing the structure of a white light-emitting LED light-emitting device using a glass substrate containing a phosphor-containing multilayer glass coating.
  • Figure 25 is a schematic view showing the structure of a glass-coated cylindrical substrate including a multilayer phosphor.
  • Fig. 1 is a schematic view showing a white LED light-emitting device according to a first embodiment of the present invention.
  • the white light LED illuminating device comprises: a base 1, a blue LED chip 2, a reflector 3 and a glass substrate 5.
  • the two ends of the reflector 3 are respectively connected to the base 1 and the glass substrate 5, and the blue LED chip 2 is disposed on a side of the base 1 facing the glass substrate 5, and the electrode leads of the blue LED chip 2 pass through the base 1, and the glass substrate 5
  • One surface is coated with a phosphor-containing glass coating layer 4 (conversion layer), and the refractive index of the glass coating layer 4 containing the phosphor is smaller than the refractive index of the glass substrate 5, and at this time, the glass substrate 5 has one side of the glass coating layer 4.
  • the blue LED chip 2 on the base 1 is directed to improve the white light extraction efficiency of the light emitting device.
  • the phosphor in order to obtain white light, may be an LED yellow phosphor.
  • the phosphor may also be a mixture of any of the LED green phosphors and the LED red phosphors, or a mixture of LED yellow phosphors and a small amount of LED red phosphors. You can adjust the color of the phosphor by adjusting the ratio of the phosphor, or the color temperature. As long as the ratio is adjusted, the LED light in the full color temperature range can be obtained.
  • the phosphor-containing glass coating layer 4 may have a two-layer coating structure, and the coating thickness of each layer is from 3 ⁇ m to 5 mm.
  • the glass in the two layers is the same material and is a low melting glass.
  • the phosphors in the two layers of coatings may be LED green phosphors and LED red phosphors, respectively, or LED yellow phosphors and LED red phosphors, respectively.
  • the phosphor composition in the two coatings is different.
  • the base 1 of the light-emitting device has a heat dissipation function.
  • the LED blue chip 2 of the light emitting device may be epitaxially grown on the SiC substrate, or grown on the gemstone (A1203) substrate, or grown on the Si substrate, or on the above three substrates. Any one of them is transferred to other substrates after growth of.
  • the LED blue chip 2 of the illuminating device may be single or multiple (chipset), and the plurality of chips may be connected in series, or in parallel, or mixed through the connecting wires.
  • a reflector 3 is disposed between the LED blue chip 2 and the glass coating 4 containing the phosphor, and the purpose is to reflect the blue light emitted by the LED blue chip 2 onto the glass coating 4 containing the phosphor to excite the phosphor to emit light.
  • White light is obtained by mixing with a portion of the blue light emitted by the LED blue chip 2.
  • the reflector is cylindrical, and the inner reflecting surface can be plated with a metal film to enhance the light reflection effect.
  • Fig. 2 is a schematic view showing a white LED light-emitting device according to a second embodiment of the present invention.
  • the reflector 8 is in the shape of a truncated cone
  • the base 6 serves as a lower base of the truncated cone shape
  • the glass substrate 10 serves as an upper base of the truncated cone shape.
  • Fig. 3 is a schematic view showing a white LED light-emitting device according to a third embodiment of the present invention.
  • the reflector 13 has a bowl shape
  • the base 11 serves as a bowl bottom
  • the chip 12, the transfer port 14, and the glass substrate 15 is located at the mouth of the bowl.
  • FIG. 4 is a schematic view of a white LED light emitting device according to Embodiment 4 of the present invention.
  • the reflector 23 has a rectangular parallelepiped shape
  • the base 21 serves as a lower base of the rectangular parallelepiped
  • the LED chip 22, the white light conversion layer 25, and the glass substrate 26 serve as the upper base of the rectangular parallelepiped.
  • the reflector is composed of four rectangular reflecting surfaces 23 and 24.
  • the geometrical dimensions of the opposite set of reflecting surfaces of the four reflecting surfaces 23 and 24 are completely the same, and the geometrical dimensions of the adjacent two reflecting surfaces may be the same or different, and the shapes may be square or rectangular.
  • Fig. 5 is a schematic view showing a white LED light-emitting device according to a fifth embodiment of the present invention.
  • the reflector 29 has a chamfered shape, and the base 27 serves as a bottom of the chamfered plate.
  • the LED chip 28, the white light conversion layer 31, and the glass substrate 32 serve as a chamfered upper base.
  • the reflector is composed of four inverted trapezoidal reflecting surfaces 29 and 30. The relative reflection sets of the four reflective surfaces 29 and 30 are exactly the same size, and the adjacent two reflective surfaces may have the same or different geometrical dimensions.
  • Fig. 6 is a schematic view showing a white LED light-emitting device of Embodiment 6 of the present invention.
  • the reflector has a semi-cylindrical shape with reflective surfaces 41 and 42.
  • the base 39 is disposed in parallel with the semi-cylindrical rectangular surface. Of course, the base 39 may also be non-parallel to the semi-cylindrical rectangular surface.
  • the LED chip 40, the white light conversion layer 43, and the glass substrate 44 are provided as a semi-cylindrical rectangular surface.
  • Embodiment 7-12 are schematic views of a white LED light emitting device according to Embodiment 7-12 of the present invention, respectively.
  • the difference between the embodiment 7_12 and the embodiment 1_6 is that the white LED light-emitting device further includes a lens, and one plane of the lens closely fits the glass substrate.
  • the outer contour 52 of the lens in Fig. 7 has a hemispherical shape, and the lens bottom 51 and the glass substrate 5 are adhered by a silicone rubber or a resin material.
  • the outer contours 54, 56, 60, 62 of the lenses of Figures 8-11 are similar to a hemispherical shape, and the lens bottoms 53, 55, 59, 61 are utilized with the glass substrates 10, 15, 26, 32, respectively.
  • the silicone or resin material is adhered.
  • the outer contour 64 of the lens in Fig. 12 is semi-cylindrical, and the lens bottom 65 and the glass substrate 44 are adhered by a silicone or resin material.
  • the lens is made of a glass material, or an acrylic material, or any other transparent solid material.
  • the refractive index of the glass coating layer 4 is smaller than the refractive index of the glass substrate 5 is explained.
  • the refractive index of the glass coating containing the phosphor is larger than the refractive index of the glass substrate 5, the side of the glass substrate 5 having no glass coating 4 faces the blue LED chip 2 on the substrate 1.
  • FIG. 13 is a schematic view of a white LED light-emitting device according to Embodiment 13 of the present invention.
  • the white LED illumination device of FIG. 13 includes: a base 67, a blue LED chip 68, a red LED chip 69, a reflector 70 and a glass substrate 72. (contains coating or conversion layer 71).
  • the two ends of the reflector 70 are respectively connected to the base 67 and the glass substrate 72, the blue LED chip 68 and the red LED chip 69 are disposed on the side of the base 67 facing the glass substrate, and the blue LED chip set and the red LED chip set
  • the electrode leads pass through the base, or the side of the glass coating containing the phosphor can emit light toward the LED blue chip and the red chip, or can be reversed.
  • the LED blue chip may be a blue chip grown on a gemstone (A1 2 0 3 ) substrate, or a blue chip grown on a SiC substrate, or a blue chip grown on a Si substrate, or After being grown on any of the above three substrates, it is transferred to other substrates.
  • the red LED chip can be a III/V compound semiconductor red light chip (such as InGaAlP) or a derivative thereof.
  • the blue LED chip and the red LED chip are a set of chips connected in series, in parallel or mixed.
  • the red chip should be geometrically placed symmetrically to ensure a uniform distribution of red light.
  • the setting principle of the red light chip is that the ratio of the luminous flux of the red light emitted by the red LED chip to the sum of the luminous flux of the red light emitted by the red LED chip and the blue light emitted by the blue LED chip is 0. 5% to 25%.
  • the phosphor contained in the coating of the glass substrate is any one of the LED yellow phosphors.
  • the reflector is cylindrical, and the inner reflecting surface can be plated with a metal film to enhance the light reflection effect.
  • Figure 14 is a schematic view of a white LED light-emitting device according to Embodiment 14 of the present invention.
  • the reflector 76 is in the shape of a truncated cone
  • the base 73 serves as a lower base of the truncated cone shape
  • the glass substrate serves as an upper base of the truncated cone shape.
  • Figure 15 is a schematic view of a white LED light-emitting device according to Embodiment 15 of the present invention.
  • the reflector hood 82 has a bowl shape
  • the base 79 serves as a bowl bottom
  • the glass substrate is located at the mouth of the bowl.
  • Figure 16 is a schematic view of a white LED light-emitting device according to Embodiment 16 of the present invention.
  • the reflector has a rectangular parallelepiped shape
  • the base 85 serves as a lower base of the rectangular parallelepiped
  • the glass substrate serves as an upper base of the rectangular parallelepiped.
  • the reflector is composed of four rectangular reflecting surfaces 88 and 89.
  • the opposite set of reflecting surfaces of the four reflecting surfaces 88 and 89 have the same geometrical dimensions, and the adjacent two reflecting surfaces may have the same geometrical dimensions or may be different in shape and may be square or rectangular.
  • Figure 17 is a schematic view of a white LED light-emitting device according to Embodiment 17 of the present invention.
  • the reflector has a chamfered shape
  • the base 92 serves as a chamfered bottom
  • the glass substrate serves as a chamfered upper base.
  • the reflector is composed of four inverted trapezoidal reflecting surfaces 95 and 96.
  • the opposite set of reflective surfaces of the four reflective surfaces 95 and 96 are identical in geometry, and the adjacent two reflective surfaces may have the same or different geometrical dimensions.
  • Figure 18 is a schematic view of a white LED light-emitting device according to Embodiment 18 of the present invention.
  • the reflector has a semi-cylindrical shape with reflective surfaces 104 and 105.
  • the base 99 is disposed in parallel with the semi-cylindrical rectangular surface, or the base 99 may be non-parallel to the semi-cylindrical rectangular surface.
  • the glass substrate is provided as a semi-cylindrical rectangular surface.
  • FIG 19 is a schematic view of a white light emitting device according to Embodiment 19 of the present invention.
  • the white light emitting device comprises: a base 118, a blue LED chip 120, a reflector 119 and a glass substrate 119; the area enclosed by the outlines 106, 107, 108, 109 in the figure is the base 118.
  • the area enclosed by the outlines 110, 111, 112, 113 is a phosphor-coated glass substrate 119 having a cylindrical shape; the outlines 106, 111, 114, 116 are enclosed in the figure.
  • the area enclosed by the contour lines 107, 110, 115, 116, the area enclosed by the contour lines 109, 112, 115, 117 and the area enclosed by the contour lines 108, 113, 114, 115 are the components of the light reflecting cover. section.
  • the two ends of the reflector 119 are respectively connected to the base 118 and the glass substrate 119.
  • the blue LED chip 120 is disposed on a side of the base 118 facing the glass substrate 119, and the electrode leads of the blue LED chip 120 pass through the base 118, and the glass substrate 119 a surface Coating the phosphor-containing glass coating, the refractive index of the glass coating containing the phosphor is smaller than the refractive index of the glass substrate 119, and the glass substrate 119 has a glass coated side facing the blue LED chip 120 on the substrate 118, In order to improve the white light extraction efficiency of the light emitting device.
  • the transparent substrate and the base have a shape or a general type, but the dimensions are different.
  • the blue LED chip is evenly distributed on the cylindrical base 118; the blue LED chip 120 is a set of chips connected in series, in parallel or mixed; the blue LED chip 120 is a blue chip grown on a gemstone (A1 2 0 3 ) substrate.
  • the blue chip grown on the SiC substrate, or the blue chip grown on the Si substrate, or grown on any of the above three substrates is transferred to other substrates.
  • the phosphor is an LED yellow phosphor.
  • the phosphor may also be a mixture of LED green phosphor and LED red phosphor in any ratio, or a mixture of LED yellow phosphor and LED red phosphor in any ratio.
  • the coating containing the phosphor has a two-layer structure, and the thickness of each layer is from 3 ⁇ m to 5 mm.
  • the two-layer phosphors are LED green phosphor and LED red phosphor, or LED yellow phosphor and LED red phosphor.
  • the reflective surface of the reflector is coated with a metal film.
  • red LED chips can be uniformly placed in the blue chip chip to adjust the color temperature of the light emitted by the light emitting device.
  • the phosphor coating can only contain yellow phosphor; the red LED chip
  • the ratio of the luminous flux of the red-emitting light to the sum of the luminous flux of the red light emitted from the red LED chip and the blue light of the blue LED chip is 0.3% to 27%.
  • the red LED chip can be a III/V compound semiconductor red chip (such as InGaAlP) or a derivative thereof.
  • the glass substrate receives the yellow light emitted from the blue light emitting chip (group) 120, or the mixed light of the yellow light and the red light, or the mixed light of the green light and the red light; the excited light and the blue light chip of the phosphor A portion of the blue light emitted by 120 is mixed to obtain white light.
  • Figure 20 is a block diagram showing the structure of a white light emitting device according to Embodiment 20 of the present invention.
  • the difference between this embodiment and the embodiment 19 is mainly that the glass substrate 123 is spherical. Chip 121, chip substrate 122, and switch 124.
  • the glass substrate and the base may also be hyperboloid, elliptical, ovoid, parabolic convex, or cylindrical.
  • the reflector is semi-conical; when the base and the wavelength conversion component are cylindrical or cylindrical-like plates, the base is attached to other accessories attached thereto The surface acts as a reflector.
  • 125 is the first coating
  • 126 is the second coating
  • 127 is the heat sink (bracket)
  • 128 is the blue LED chip
  • 129 and 130 are the electrodes of the LED chip
  • 131 is the electrode lead of the LED chip.
  • 132 is a light reflecting device of the light emitting device
  • 133 is blue light emitted by the blue LED chip
  • 134 is white light emitted by the light emitting device
  • 135 is a glass substrate A
  • 136 is glass B
  • 137 is a phosphor C
  • 138 is a phosphor D
  • 139 is a glass substrate A.
  • the butyral resin has a molecular formula of C 16 H 28 0 5 and the ethyl cellulose has a molecular formula of [C 6 H 7 0 2 (OC 2 H 5 ) 3 ] n .
  • glass A is a common soda lime glass having a thickness of 1 mm, a refractive index of about 1.52 at a wavelength of 460 nm, a glass transition temperature of 570 ° C, and a softening temperature of 620 ° C;
  • Glass B is a low-melting-point p-salt glass containing P 2 0 5 : 41%, ZnO: 34%, B 2 0 3 : 19%, (Li 2 0 3% + Na 2 0 1. 5% + K 2 0 1. 5%): 6%.
  • the refractive index is about 1.49 at a wavelength of 460 nm, the glass transition temperature is 480 ° C, and the softening temperature is 526 ° C; the phosphor C is a YAG yellow phosphor having a particle size distribution d 5 . It is 10 microns.
  • the above paste was uniformly coated on the cleaned glass A substrate by a blade coater, and the thickness of the coating paste was controlled by adjusting the distance from the blade to the glass substrate, and the distance from the blade to the glass substrate was 0.2 mm. .
  • a layer of SiO 2 film may be first coated on the glass A substrate before coating.
  • the SiO 2 film may be coated by a chemical method such as a sol-gel method or a physical method such as a sputtering method.
  • the paste-coated glass plate was dried at 160 ° C for 1 hour and then cooled to room temperature. The temperature was raised to 430 ° C for 1 hour in 1 hour, then rapidly heated to 540 ° C for 1 hour in 21 minutes, and then cooled to room temperature in 2 hours. Thus, a glass coating containing a phosphor was obtained on the substrate of the glass A.
  • the glass coating containing the phosphor in this embodiment is transparent after sintering, the surface is smooth, and the edges are free from warping.
  • blue light emitted from the blue chip irradiated a glass A substrate with a glass B coating containing a phosphor to obtain bright white light (128 1 mAV).
  • Example 22 differs from Example 21 in that 20 g of glass B powder and 3.5 g of YAG yellow phosphor plus 4.5 g of organic liquid (mixture of terpineol and ethyl cellulose, mass ratio of 6. 6: 1) Mixing to obtain a paste.
  • the sintering process in this example was as follows: The paste-coated glass plate was dried at 170 ° C for 1 hour and then cooled to room temperature. The temperature was raised to 450 ° C for 1 hour with 1 hour, then rapidly heated to 550 ° C for 1 hour with 21 minutes, and then cooled to room temperature for 2 hours. Thus, a glass coating containing a phosphor was obtained on the substrate of the glass A.
  • the glass coating containing the phosphor in this embodiment is transparent after sintering, the surface is smooth, and the edges are free from warping.
  • blue light emitted from the blue chip irradiated a glass A substrate with a glass B coating containing a phosphor to obtain bright white light (125 1 mAV).
  • Example 23 differs from Example 21 in that 20 g of glass B powder and 0.2 g of YAG yellow phosphor are added with 4 g of organic liquid (mixture of terpineol and butyral resin, mass ratio of 6:1). ) Mixing to obtain a paste.
  • the glass coating containing the phosphor in this embodiment is transparent after sintering, the surface is smooth, and the edges are free from warping.
  • the blue light emitted from the blue chip irradiated the glass A substrate with the glass B coating containing the phosphor, and a blueish white light (135 lm/W) was obtained. This is because a small portion of the blue light emitted by the blue chip is absorbed by the fluorescent glass to emit yellow light, and the remaining blue light is emitted more, and the total mixed light lacks a yellow light component.
  • Example 24 differs from Example 21 in that 20 g of glass B powder and 25 g of YAG yellow phosphor are added with 4 g of organic liquid (mixture of terpineol and butyral resin, mass ratio of 6:1). ) Mixing to obtain a paste.
  • the glass coating containing the phosphor in this embodiment is transparent after sintering, the surface is smooth, and the edges are free from warping.
  • the blue light emitted from the blue chip irradiated the glass A substrate with the glass B coating containing the phosphor, and a yellowish white light (85 1 m/W) was obtained.
  • a yellowish white light 85 1 m/W
  • the coating is caused. The light transmittance is lowered, so the intensity of the total mixed light is lowered.
  • Embodiment 25 This embodiment differs from Embodiment 21 in that when the paste is uniformly applied to the cleaned glass A substrate by a blade coater, the distance from the blade to the glass substrate is 5 mm.
  • the glass coating containing the phosphor in this embodiment is transparent after sintering, the surface is smooth, and the edges are free from warping.
  • the blue light emitted from the blue chip irradiated the glass A substrate with the glass B coating containing the phosphor, and a slightly yellowish white light (95 1 m/W) was obtained. This is because most of the blue light emitted by the blue chip is absorbed by the fluorescent glass to emit yellow light, while the remaining blue light is less, and the total mixed light lacks blue light.
  • Example 26 this example differs from Example 21 in that the glass B component used is (molar ratio): P 2 0 5 : 28%, Bi 2 0 3 : 16%, Nb 2 0 5 : 17.5%, ZnO: 23, Li 2 0: 5%, W0 3 : 10.5%. It has a refractive index of 1.99 at a wavelength of 460 nm, a glass transition temperature of 489 ° C, and a softening temperature of 535 ° C.
  • the glass B component used is (molar ratio): P 2 0 5 : 28%, Bi 2 0 3 : 16%, Nb 2 0 5 : 17.5%, ZnO: 23, Li 2 0: 5%, W0 3 : 10.5%. It has a refractive index of 1.99 at a wavelength of 460 nm, a glass transition temperature of 489 ° C, and a softening temperature of 535 ° C.
  • the sintering process in this example was as follows: The glass plate coated with the paste was dried at 160 ° C for 1 hour and then cooled to room temperature. The temperature was raised to 430 ° C for 1 hour in 1 hour, then rapidly heated to 550 ° C for 1 hour in 23 minutes, and then cooled to room temperature in 2 hours. Thus, a glass coating containing a phosphor was obtained on the substrate of the glass A.
  • the glass coating containing the phosphor in this embodiment is transparent after sintering, the surface is smooth, and the edges are free from warping.
  • the blue light emitted by the blue chip illuminates the glass A substrate with the glass B coating containing the phosphor (the glass coated side faces away from the blue chip) to obtain bright white light ( 116 1mAV).
  • Embodiment 27 differs from Embodiment 21 in that a two-layer phosphor-containing glass coating as shown in Fig. 21 is used, wherein: 125 is a (5! (3 ⁇ 4) 5 ⁇ 1 2+ red phosphor)
  • the glass coating, 126 is a glass coating containing YAG yellow phosphor.
  • the composition of the two-coated glass B is the same as in Example 21.
  • the present embodiment is also different from the embodiment 21 in that the distance from the blade to the glass substrate is 0.01 mm when the first coating is prepared, and the distance from the blade to the glass substrate is 0.2 mm when the second coating is prepared.
  • the two-layer glass coating containing the phosphor in this embodiment was transparent after sintering, the surface was smooth, and the edges were free from warpage. Using a blue light chip grown on a 1 W SiC substrate, the blue light emitted from the blue chip illuminates the glass A substrate with the glass B coating containing the phosphor, and a bright white light (84 1 mAV) is obtained.
  • the glass substrate 135 may be of a convex type or a cylindrical type.
  • a white LED light-emitting device can be obtained by mounting a glass substrate containing a phosphor on a glass substrate having a blue light-emitting element.
  • the glass substrate A in FIG. 25 is a common soda lime glass, the surface is a part of a spherical surface, and the glass substrate A may also have a cylindrical shape, a thickness of 1 mm, and a glass transition temperature of 570. °C, softening temperature 620 °C.
  • the glass B may also be a low melting point p-sodium silicate glass, the composition comprising P 2 0 5 : 41%, ZnO: 34%, B 2 0 3 : 19%, (Li 2 0 3 % + Na 2 0 1. 5% + K 2 0 1. 5%) : 6%.
  • the glass transition temperature is 480 ° C, and the softening temperature is 526 ° C; the phosphor C is a YAG yellow phosphor with a particle size distribution d 5 . It is 10 microns.
  • 5 g of an organic liquid 4 g (a mixture of terpineol and a butyral resin, mass ratio of 6:1) were kneaded to obtain a paste.
  • the above paste was uniformly applied to the cleaned glass A substrate by a gas spraying method, and the thickness of the coating paste was controlled by adjusting parameters such as gas pressure.
  • the paste-coated glass plate was dried at 160 ° C for 1 hour and then cooled to room temperature. The temperature was raised to 430 ° C for 1 hour in 1 hour, then rapidly heated to 540 ° C for 1 hour in 21 minutes, and then cooled to room temperature in 2 hours. Thus, a glass B coating containing a phosphor was obtained on the substrate of the glass A.
  • the glass coating containing the phosphor in this embodiment is transparent after sintering, the surface is smooth, and the edges are free from warping.
  • a layer of S i0 2 or Zr0 2 film or the like may be coated on the surface thereof.
  • the film coated with Si0 2 or the like may be a chemical method such as a sol-gel method, or a physical method such as a sputtering method or the like.
  • blue light chip grown on a 1 W SiC substrate blue light emitted from the blue chip irradiated a glass A substrate with a glass B coating containing a phosphor to obtain bright white light (126 lm/W).
  • Embodiment 29 This embodiment differs from Embodiment 28 in that a two-layer phosphor-containing glass coating structure is used, wherein:
  • 125 is a glass coating containing (5! (3 ⁇ 4) 5 ⁇ 1 2+ red phosphor
  • 126 is a glass coating containing YAG : Ce 3+ yellow phosphor.
  • Composition and implementation of two-coated glass B The same is true for Example 28.
  • the two-layer glass coating containing the phosphor in this embodiment is transparent after sintering, the surface is smooth, and the edges are free from warpage.
  • the phosphor may be an LED yellow phosphor.
  • the phosphor may also be a mixture of LED green phosphor and LED red phosphor in any ratio, or a mixture of LED yellow phosphor and a small amount of LED red phosphor.
  • the illuminating color, or color temperature can be adjusted by adjusting the proportion of the phosphor, and the LED light of the full color temperature range can be obtained by adjusting the ratio.
  • the phosphor-containing glass coating layer may have a two-layer coating structure, and the coating thickness of each layer is from 3 micrometers to 5 millimeters.
  • the glass material in the two layers of coating is the same.
  • the phosphors in the two layers of coating can be LED green phosphor and LED red phosphor, respectively, or LED yellow phosphor and LED red phosphor.
  • the phosphor composition in the two layers of coating is different.
  • the base of the light-emitting device has a heat dissipation function.
  • the LED blue chip of the light emitting device may be epitaxially grown on the SiC substrate, or grown on the gemstone (A1203) substrate, or grown on the Si substrate, or in the above three Any one of the substrates is grown and transferred to other substrates.
  • the LED blue chip of the illuminating device may be single or multiple (chipset), and the plurality of chipsets may be connected in series, or in parallel, or mixed through the connecting wires.
  • a reflector is disposed between the LED blue chip and the convex glass substrate, and the purpose is to reflect the blue light emitted by the LED blue core onto the glass coating containing the phosphor to excite the phosphor to emit light, and the LED Part of the blue light emitted by the blue chip is mixed to obtain white light.
  • the light-emitting device of the present invention does not use silica gel or resin, so there is no problem of light-emitting degradation of the device due to deterioration of the silica gel or the resin; the surface of the LED blue chip is not coated with the phosphor-containing silica gel or resin, so The problem of heat dissipation is greatly alleviated; the glass plate containing the phosphor glass coating in the light-emitting device is far away from the LED blue chip, so the phosphor does not have the phenomenon of light-emitting wavelength drift caused by the heat dissipation problem of the device; in the light-emitting device, the phosphor is sealed by the glass, The problem of deterioration of luminescence characteristics caused by the reaction of the phosphor with the acid gas or the moisture in the air can be eliminated; the red chip is symmetrically distributed around the blue chip, and the red light emitted by the red chip can be supplemented by the combination of the blue chip and the yellow phosphor.
  • the red light component is missing in the white light, so the white light color rendering index obtained by the light emitting device is higher; in addition, since the red light chip has higher light efficiency, the light effect of the light emitting device of the present invention is higher than that of the blue light chip plus the three primary color phosphor. Or a yellow phosphor plus a red phosphor combination to obtain a high luminous efficacy of the warm white light device; Blue light source with a curved surface and a uniform distribution of light having a curved surface of a conversion coating to obtain a uniform white light, and white light can effectively expand the area; the light emitting device does not need a secondary optical design can be obtained in the structure a large area of uniform illumination.

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Abstract

一种白光LED发光装置，包括底座（1）、LED芯片（2）、反光罩（3）和玻璃基板（5）。反光罩（3）的两端分别连接底座（1）和玻璃基板（5），LED芯片（2）设置在底座（1）面对玻璃基板（5）的一面，且LED芯片（2）的电极引线穿出底座（1），玻璃基板（5）的一个表面上涂覆含荧光体的玻璃涂层（4），当玻璃涂层（4）的折射率小于玻璃基板（5）的折射率时，玻璃基板（5）涂有玻璃涂层（4）的一面朝向底座（1），当玻璃涂层（4）的折射率大于玻璃基板（5）的折射率时，玻璃基板（5）没有涂有玻璃涂层（4）的一面朝向底座（1）。利用蓝光LED芯片（2）发出的蓝光照射含有荧光体的玻璃涂层（4）的玻璃基板（5）来获得均匀的白光；利用蓝光LED芯片（68）发出的蓝光及红光LED芯片（69）发出的红光照射含有荧光体的玻璃涂层来获得高显色指数的均匀的暖白光；利用曲面型的底座和曲面型的玻璃基板来获得宽的及均匀的光线照射区域。缓解了散热问题，使得荧光体不会出现因器件散热导致的发光特性严重劣化、光线照射不均匀、光线照射区域狭窄及需要二次光学设计等缺陷。

Description

一种白光 LED发光装置及制备方法
技术领域
本发明涉及发光装置， 且特别是涉及白光 LED发光装置。
背景技术
白光 LED 作为一种新的照明方式具有节能、 环保及长寿命等优点， 其基于以下的工作原理： LED 蓝光芯片发出蓝光照射荧光体（荧光粉），荧光体受到蓝光的激发发出黄光、或绿光与红光的混合光线、 或黄光与红光的混合光线。 这些荧光体受激发出的光线与蓝光芯片发出的部分蓝光混合而合成白光。
如 CN200910036503—种白光 LED,利用超高亮度 InGaN蓝色 LED芯片，再在芯片上加少许的钇石榴 石为主体的荧光粉，使其在蓝光激发下产生黄绿光，而此黄绿光又可与透出的蓝光合成白光。 CN200710079928的白光发射装置包括蓝色 LED以及设置于蓝色 LED上的橙色憐光体与绿色憐光体的混 合物。
现有荧光体通过硅胶或树脂混合均匀地被固化在芯片表面。 这种封装方式有其固有的缺点， 具体 如下： 荧光粉颗粒会反射一部分光线进入蓝光芯片， 影响了发光器件的光效； 硅胶或树脂经过 LED芯 片发出的蓝光长时间照射后会变黄， 影响发光器件的光效； 器件工作时热量来不及散发导致器件工作 温度升高， 使得荧光体的发光波长会发生漂移； 树脂具有透气性， 导致硫化物荧光体、 或铝酸盐荧光 体、 或硅酸盐荧光体与空气中的气体 （如酸性气体等） 反应而发生性能劣化； 硫化物荧光体、 或铝酸 盐荧光体、 或硅酸盐荧光体还会与空气中的水分反应而发生性能劣化。
为了提高 LED发光器件的显色指数， 人们还在普通的白光 LED的黄色荧光粉中加入适量的红色荧 光粉来提高其显色指数， 或使用三基色荧光粉（绿色荧光粉 +红色荧光粉）来提高其显色指数。 由于绿 色荧光粉及红色荧光粉的光效普遍较低， 因此发光器件的光效下降。
利用上述发光装置制作的照明灯具中由于采用分立的发光芯片， 因此所发出的光线在空间分布不 均匀， 而且所发出的光线有 "刺眼" 的感觉。 CN102301176 A具有远程憐光体层 /或散射层的照明系统 公布了一种远程憐光体薄膜， 该薄膜具有 "三明治"型结构， 即所谓的 "远程激发技术"。 这种多层膜 结构在发光装置中长时间使用后容易脱落， 稳定性较差。 CN101711435 A 具有由带开口的支撑结构保 持的波长转换原件的照明装置公布了一种远程激发用透明或半透明的发光陶瓷片。 这种陶瓷片通过高 温高压的固相合成工艺获得， 成本太高， 不利于大规模生产。
在远程激发技术中蓝光芯片的安置区域与光转换部件的面积可能有较大差异， 因此光转换部件单 位面积上接收的蓝光光通量会有较大差异， 难以做到整个光转换部件完成波长转换并混光后获得的白 光都具有相同的质量（如色温及显色指数等）。 此外， 为了使得光线照射区域扩大， 并获得均匀的光照 效果， 需要对发光装置进行二次光学设计 （如路灯等）， 工艺复杂。
发明内容
本发明目的在于提供一种利用蓝光 LED芯片发出的蓝光照射含有荧光玻璃涂层的玻璃基板来获得 白光的装置。 本发明还提供一种包含荧光体的玻璃涂层的制造方法， 在玻璃基板上制造包含荧光体的 玻璃涂层， 以有效解决上述利用传统的 LED封装工艺所制造的发光器件中出现的器件光效下降及荧光 体发光特性劣化等问题。 另外， 本发明还提供含有所述玻璃涂层的发光器件及其制造方法； 在使得发 光装置获得高的显色指数的同时， 还可以获得高的光效； 大幅改善发光装置所发出光线的均匀性； 有 效扩大发光装置的光线照射区域。
为达成上述目的， 本发明提出一种白光 LED发光装置：
白光 LED发光装置包括： 底座、蓝光 LED芯片、 反光罩和玻璃基板，反光罩的两端分别连接底座和 玻璃基板， 蓝光 LED芯片设置在底座面对玻璃基板的一面， 且蓝光 LED芯片的电极引线穿出底座， 玻 璃基板的一个表面上涂覆含荧光体的玻璃涂层， 当荧光玻璃涂层的折射率小于玻璃基板的折射率时， 玻璃基板涂有玻璃涂层的一面朝向底座， 当玻璃涂层的折射率大于玻璃基板的折射率时， 玻璃基板没 有涂有荧光玻璃涂层的一面朝向底座。 当荧光玻璃涂层的折射率大于玻璃基板的折射率时， 玻璃基板 没有荧光玻璃涂层的一面朝向底座， 以提高发光器件的白光提取效率。
进一步的， 荧光体是 LED黄色荧光粉； 任意比例的 LED绿色荧光粉与 LED红色荧光粉的混合物或 任意比例的 LED黄色荧光粉与 LED红色荧光粉的混合物。 可以通过调节荧光粉的比例来调节发光颜色 或色温， 只要调节比例就可以获得全色温范围的 LED光。
包含荧光体的玻璃涂层采用 2层涂层结构，且每层的涂层厚度是 3微米至 5毫米。其中上述 2层涂 层结构的荧光体分别是 LED绿色荧光粉和 LED红色荧光粉， 或分别是 LED黄色荧光粉和 LED红色荧光 粉。
其中反射罩内部反射面上镀有金属薄膜。
其中反光罩呈圆柱形， 底座和玻璃基板分别作为所述圆柱形的两个底面； 反光罩呈倒圆台形或碗 形， 底座作为倒圆台的下底或碗底， 玻璃基板作为倒圆台形的上底或位于碗口的位置； 反光罩呈长方 体或倒棱台形， 底座作为长方体的下底或倒棱台形的下底， 玻璃基板作为长方体的下底或倒棱台形的 上盖； 反光罩呈半圆柱形， 底座沿着一条直线设置， 该直线与半圆柱的矩形面平行， 且该直线落在通 过柱轴并与半圆柱的矩形面垂直的平面内， 玻璃基板作为半圆柱的矩形面。
其中反光罩呈半圆柱形， 底座沿着一条直线设置， 该直线与半圆柱形的矩形面平行， 且该直线落 在通过柱轴并与半圆形的矩形面垂直的平面内， 柱面型玻璃基板作为半圆柱形的盖；
或其中反光罩的截面轮廓线呈抛物线型， 底座沿着一条直线设置， 该直线与抛物面的焦线重合， 柱面型玻璃基板作为半圆柱形反光罩的盖；
或反光罩呈细长的长方体或细长倒棱台形， 底座作为细长长方体或细长倒棱台形的下底， 柱面型 玻璃基板作为细长长方体或倒棱台形的盖。 反光罩与透明基板之间设有转接板或转接环。
进一步， 玻璃基板 A是曲面型， 其截面的轮廓线是圆弧的一部分、 或抛物线、 或双曲线、 或其他 的弧线的一部分； 或玻璃基板 A是球面、 双曲面、 椭圆面、 卵形面或抛物面的凸面型的板材或为柱面 型。
LED芯片可以是宝石 (A1203)衬底上生长的蓝光芯片， 也可以是 SiC衬底上生长的蓝光芯片， 或者是 Si衬底上生长的蓝光芯片， 或是在上述三种基板中的任意一种上生长后被转移到其他基板上的。 所述 LED蓝光芯片 4可以使用单颗 LED芯片，也可以使用多颗或多组 LED芯片，其目的是提供蓝光发光光源。
进一步， 其中蓝光 LED芯片可以是单颗芯片， 也可以是芯片组， 多颗芯片之间可以串联， 也可以 并联或混联。 另外， 也可以以其它方式将电极引出。 进一步， 本发明中， 白光 LED发光装置还包括透镜， 透镜的一个平面与玻璃基板密切贴合。上述 透镜呈半球面形、 类似半球面形、 半圆柱形、 或类似半圆柱形。
进一步， 其中所述透镜由玻璃材质、 或亚克力材质、 或其它任何透明固体材料制成。
进一步， 所述透镜的一个平面与玻璃基板利用硅胶或树脂材料进行密切贴合。
进一步， 底座具有散热功能， 由铝或陶瓷制成。
作为改进的白光 LED发光装置， 包括： 底座、 同时设有蓝光 LED芯片组及红光 LED芯片组、 反光 罩和玻璃基板； 反光罩的两端 （上端与下端或前端与后端两端） 分别连接底座和玻璃基板， 蓝光 LED 芯片组和红光 LED芯片组设置在底座、 面对波长转换组件的一个面， 且蓝光 LED芯片组和红光 LED芯 片组的电极引线穿出底座。 含荧光体的玻璃涂层设在玻璃基板的迎着 LED蓝光芯片和红光芯片出射光 线的一面、 或在另一面。
进一步的， 玻璃基板的一面涂有包含荧光体的玻璃涂层。其中， 玻璃涂层所包含的荧光体是任意 一种 LED黄色荧光粉 （如 YAG黄色荧光粉、 或硅酸盐黄色荧光粉等）； 任意比例的 LED绿色荧光粉与 LED红色荧光粉的混合物。
进一步的， 玻璃基板可以呈多种物理形状， 如平板型、 球面型、 抛物面型、 柱面型、 双曲面型或 任意弧面型。
进一步的， LED蓝光芯片可以是宝石 (A1203)衬底上生长的蓝光芯片，也可以是 SiC衬底上生长的蓝 光芯片， 或者是 Si衬底上生长的蓝光芯片， 或是在上述三种基板中的任意一种上生长后被转移到其他 基板上的。 红光 LED芯片包括 III/V族化合物半导体红光芯片 （如 InGa、 A1P ) 及其衍生品种。
进一步的， 蓝光 LED芯片及红光 LED芯片为一组串联、并联或混联的芯片； 红光 LED芯片所发红 光的光通量与红光 LED芯片所发红光的光通量与蓝光 LED芯片所发蓝光的光通量的总和之比为 0. 5%〜 25%。
进一步， 玻璃基板和底座呈曲面形状， 两者横截面的轮廓线是圆弧、 抛物线、 双曲线、 椭圆或任 意弧线的一部分。
进一步， 其中玻璃基板和底座是球面、 双曲面、椭圆面、 卵形面或抛物面的凸面型的板材或为柱 面型板材。
进一步，其中玻璃基板和底座呈一类或大致一类的形状，无需二次光学设计可以增加光线的照射 范围， 获得均匀的光照。
本发明包含荧光体的玻璃涂层及制备：
( 1 ) 将质量比为 100: 1~100: 150的玻璃 B的粉末与荧光体 C的粉末、 有机溶剂及粘结剂， 混合成 均匀的糊状物； （2) 将糊状物均匀涂覆在玻璃基板上， 将涂有糊状物的玻璃基板干燥， 使有机溶剂挥 发完全； （3 )将干燥后的涂有糊状物的玻璃基板烧结，在玻璃基板表面得到含有荧光体的玻璃涂层， 所述烧结的过程为： 升温至温度 Dl， 使粘结剂分解挥发完全后， 再升温至温度 D2， 使玻璃 B的粉末软 化、 结合形成连续玻璃体， 在玻璃基板 A表面得到含有荧光体 C的玻璃涂层， 温度 D1低于玻璃 B的玻璃 化转变温度， 温度 D2低于玻璃 A的玻璃化转变温度 10 °C以上。
显而易见的是， 温度 D1不低于粘结剂的分解挥发温度， 温度 D2不低于玻璃 B的玻璃化转变温 度。
进一步的， 步骤 （1 ) 中， 有机溶剂与粘结剂的质量比为 10: 1-10： 10， 其中有机溶剂为丁基卡 必醇已酸酯、邻苯二甲酸酯、 聚乙烯醇、 松油醇、 2， 2， 4-三甲基 -1, 3-戊二醇单异丁酸酯中的一种或其 中两种任意比例的混合物； 粘结剂为丙烯酸类树脂、 苯乙烯树脂、 乙基纤维素、 酚醛树脂或缩丁醛树 脂中的一种或其中任意两种任意比例的混合物。更优选为乙基纤维素和 /或缩丁醛树脂。进一步优选的 是， 有机溶剂与粘结剂的质量之和与玻璃 B粉末的质量之比为 1 : 10~1 :3， 最优选为 1 :5~1 :4。
步骤 （1 ) 中有机溶剂与粘结剂的选择方法 （包括品种与用量的确定） 与现有技术中用于封接的 玻璃粉料制备糊状封接组合物时选择有机溶剂与粘结剂的方法相同。所述 "糊状"为公知公用的术语， 特指粘稠的、 在基本水平状态下不会自流动的一种状态。 玻璃的玻璃化转变温度及软化温度用差热分 析 (DSC)方法来确定。 一般测试时的升温速率为 10 °C/分钟。
进一步的， 所述玻璃基板在涂覆糊状物之前， 表面涂覆有 Si02薄膜， 所述糊状物均匀涂覆在 Si02 薄膜上。 在玻璃 A基板上先涂覆一层 Si02薄膜可以防止烧结过程中发生玻璃 A与玻璃 B成分的扩散。涂覆 Si02膜可以采用化学方法， 如溶胶一凝胶方法， 或使用物理方法， 如溅射方法等。
进一步的， 还包括步骤 （4 ) : 在步骤 （3 ) 结束后， 降温至室温， 将荧光体 C替换为荧光体 D， 重复步骤 （1 ) - ( 3 )， 在玻璃基板 A表面得到顺序含有荧光体 C的玻璃涂层和荧光体 D的玻璃涂层。 含有荧光体 C的玻璃涂层的厚度为 3微米到 5毫米。 这样， 玻璃基板 A表面具有 2层玻璃涂层结构， 示意图如图 21所示。 其中的荧光体 C和荧光体 D可以是 LED黄色荧光粉、 或 LED绿色荧光粉、 或 LED红色荧光粉， 但是荧光体 C和荧光体 D成分不一样。 用于制备含有荧光体 C的玻璃涂层和荧光 体 D的玻璃涂层中玻璃粉末的材质可以相同， 也可以不同， 优选材质相同； 当材质不同时， 用于两种 玻璃涂层的玻璃粉末均需满足前述关于玻璃 B的要求。
进一步的， 步骤（3 ) 中， 使粘结剂分解挥发完全后， 在 10分钟一 10小时内升温至温度 D2; 升 温至温度 D2， 使玻璃 B软化， 在玻璃基板表面得到含有荧光体 C的玻璃涂层后， 在 20分钟 -10小时 内降温至室温。
显而易见的是， 步骤 (2)中不应该出现步骤（3 )所述粘结剂分解挥发和玻璃 B软化的现象， 即步 骤 （2 ) 中的干燥温度应该低于粘结剂的分解挥发温度。
采用步骤 （3 ) 中分步骤升温烧结的方法可以在玻璃基板 A表面成功得到透明的包含荧光体的玻 璃涂层， 所述玻璃涂层表面光滑， 边缘无翘角。 如果直接将涂层加热到玻璃 B的软化温度进行烧结的 话， 由于粘结剂来不及分解挥发， 会在涂层中形成气孔， 破坏涂层的均匀性。
玻璃基板 A可以是有碱玻璃、 无碱玻璃或石英玻璃等， 也可以是利用有碱玻璃、 无碱玻璃或石 英玻璃制备成的磨砂玻璃。
作为本领域公知常识， 玻璃基板 A和玻璃 B应该有匹配的热膨胀系数， 以免烧结后发生开裂现 象。
玻璃 B优选 Si02-Nb205系、 B203-F系、 P205-ZnO系、 P205-F系、 Si02-B203-La203系或 Si02-B203系 等低熔点玻璃。
为了使荧光体 C被激发出的光线与 LED蓝光芯片发出的蓝光混合后可以获得白光，荧光体 C可以 是 LED黄色荧光粉。 为了提高白光的显色指数， 荧光体也可以是 LED绿色荧光粉与 LED红色荧光粉的 混合物， 或者是 LED黄色荧光粉与少量 LED红色荧光粉的混合物。 荧光体 C可以由本领域技术人员根 据实际需要进行选择。
作为本领域公知常识， 玻璃 B和荧光体的粉末的粒径在 3微米到 60微米之间， 以获得均匀的封 装效果。
优选步骤 （2 ) 中的干燥温度为 50°C到 250°C。
优选， 含有荧光体 C的玻璃涂层的厚度为 3微米到 5毫米， 玻璃涂层的厚度可以由本领域技术 人员根据所得白光的质量要求来确定， 如果玻璃涂层太薄的话， 涂层中含有的荧光粉量太少， LED 蓝 光芯片发出的蓝光被荧光粉转换成的白光的比例较小， 最后合成的白光质量较差（色温太高）。如果涂 层太厚的话， LED 蓝光芯片发出的蓝光被荧光粉转换成的白光的比例较高， 最后合成的白光质量较差 (色温太低）。
本发明中升、降温的速度可以结合现有技术的启示，根据具体情况（如玻璃 A、 B的材质等因素） 进行确定， 尤其是参照玻璃封接技术领域的相关现有技术进行确定。 优选的是， 步骤（3 ) 中， 使粘结 剂分解挥发完全后， 在 10分钟一 10小时内升温至温度 D2; 升温至温度 D2， 使玻璃 B软化， 在玻璃 基板 A表面得到含有荧光体 C的玻璃涂层后， 在 20分钟 -10小时内降温至室温。
根据上述制造方法可以在玻璃基板 A表面得到的包含荧光体的玻璃涂层， 玻璃涂层可以为一层 或两层。
所述发光器件包含 LED芯片和 LED芯片上的玻璃基板 A。
所述有机溶剂及粘结剂如前所述。
根据所述制造方法得到的发光器件的结构示意图图 22所示：
发光器件包含有热沉 127， LED蓝光芯片 128， 芯片的电极引线 131， 电极 129和 130， 光线反射 装置 132， 含有荧光体 C的玻璃 B 136涂层的玻璃基板 A 135。
LED蓝光芯片 128 可以是宝石 (A1203)衬底上生长的蓝光芯片， 也可以是 SiC衬底上生长的蓝光芯 片， 或者是 Si衬底上生长的蓝光芯片， 或是在上述三种基板中的任意一种上生长后被转移到其他基板 上的。 所述 LED蓝光芯片 128可以使用单颗 LED芯片， 也可以使用多颗或多组 LED芯片， 其目的是提供 蓝光发光光源。
通过电极 129和 130给 LED蓝光芯片 128接通电源， LED蓝光芯片 128就可以发出蓝光，如图 22 中的 133所示。
光线反射装置 132的作用是将 LED蓝光芯片 128发出的光线汇聚到上面的含荧光体的玻璃涂层 上。
在不损害本发明目的的范围内，发光器件的光线反射装置 132也可以设计成其它形状，它的作用 就是将蓝光芯片发出的光线汇聚到上面的含荧光体的玻璃涂层上。
LED蓝光芯片 128发出的蓝光激发玻璃 B涂层中的荧光体 C 137， 荧光体发出黄光， 或绿光， 或 红光， 或者是上述三种光中的某两种光的混合光线。 具体荧光体发出何种光线取决于荧光体 C 137的 组分。
LED蓝光芯片 128发出的蓝光与荧光体 C 137受激发发出的光线混合可以发出白光， 如图 22中 的 134所示。
在安装含荧光体玻璃 B涂层的玻璃基板 A前， 需要先测量玻璃 A和玻璃 B的折射率 nA和 nB。 根据物理 光学原理， 如果玻璃 A的折射率 nA大于玻璃 B的折射率 nB， 荧光体 C受蓝光芯片 128发出的蓝光激发所发 出的光线 133在玻璃 A和玻璃 B的界面处不发生反射。如果玻璃 A的折射率 nA小于玻璃 B的折射率 nB，荧光 体 C受蓝光芯片 128发出的蓝光激发所发出的光线在玻璃 A和玻璃 B的界面处将发生反射，差异越大，被 反射的光线越多。 这时需要将玻璃基板 A的没有涂层的一面迎接 LED蓝光芯片 128的入射光线 133， 如 图 23所示， 以提高发光器件的出光效率。
发光器件还可以采用图 24所示的含荧光体的 2层玻璃涂层的玻璃基板。在制造这种发光器件时， 同样要采取上述措施。 2层涂层的涂覆顺序对发光器件的出光质量有影响， 但这种影响可以通过调节 第一涂层 1和第二涂层 2的涂覆厚度加以矫正。 以玻璃基板 A有涂层的一面朝向 LED蓝光芯片的方 向为例， 调节第一涂层 1和第二涂层 2的厚度依据示意图 24来说明。 如图 24所示， 如果第一涂层 1 受蓝光激发发出绿光， 第二涂层 2受蓝光激发发出红光， 制造第一涂层 1和第二涂层 2的顺序按图 24 所示来完成； 如果第一涂层 1受蓝光激发发出红光， 第二涂层 2受蓝光激发发出绿光， 则第二涂层 2 受蓝光激发发出的绿光部分被第一涂层 1中的荧光体 C吸收而再度发出红光。 这样， 混合光线 134中 的蓝、 绿和红光的总的光强比例就发生了变化。 为了不使发光器件的出光质量发生劣化， 可以适当增 加涂层 2的厚度来调节混合光线中的绿光的比例来改善器件的出光质量。
上述荧光体的玻璃涂层及制备的改进方案：光学波长转换的荧光玻璃涂层烧结的荧光体 C与玻璃 B 粉末的混合层完成后， 再在涂层表面涂覆 S i 02或 Zrf 莫。
本发明涉及的包含荧光体的玻璃涂层可以采用二层涂层结构。所述涂层 1和涂层 2制备过程中所 用的有机溶剂和粘结剂与步骤（1 )中所述的有机溶剂与粘结剂一致。所述涂层 1和涂层 2中的荧光体 C和荧光体 D可以是 LED黄色荧光粉、 或 LED绿色荧光粉、 或 LED红色荧光粉， 但是荧光体 C和荧光 体 D成分不一样。 所述涂层 1和涂层 2的制备方法与上述涂层制备方法一致。
二层涂层的涂覆顺序对发光器件的出光质量有影响，但这种影响可以通过调节第一涂层 1和第二 涂层 2的涂覆厚度加以矫正。
本发明引用以下中国申请作为本发明的优先权： 201210127190. 4， 201210125776. 7,
2012102945707, 201210512951. 8, 201310006398. 5„
本发明的有益效果如下：
1) LED蓝光芯片表面未涂覆含荧光体的硅胶或树脂， 因此散热问题大为缓解， 同时可以避免运用 传统技术封装的 LED发光器件中由于硅胶或树脂变质发黄导致的器件光效下降问题。
2) 发光器件中， 荧光体被玻璃密封， 可以杜绝荧光体与空气中的酸性气体或水气反应而导致的 发光特性劣化问题。
3)发光装置中含有荧光玻璃涂层的玻璃基板远离 LED蓝光芯片，荧光体的环境温度低，发光器件 芯片散热问题被有效缓解， 因此不会出现荧光体因器件散热问题导致的发光波长漂移现象， 也不会发 生因器件的高工作温度导致的发光性能劣化等问题。
4) 蓝光芯片周围对称分布有红光芯片， 红光芯片发出的红光可以补充蓝光芯片加黄色荧光粉组 合所获得的白光中缺少的红光成分， 因此发光装置获得的白光显色指数较高； 另外， 由于红光芯片光 效较高， 因此本发明中发光器件的光效比利用蓝光芯片加三基色荧光粉或黄色荧光粉加红色荧光粉组 合获得暖白光器件的光效高。
5 ) 利用呈曲面均匀分布的蓝光光源及呈曲面形状的光转换涂层获得均匀的白光， 且白光照射区 域可以有效扩大； 发光装置在结构上不需要二次光学设计就可以获得大面积的均匀光照。
附图说明
图 1为本发明实施例 1的白光 LED发光装置的示意图。
图 2为本发明实施例 2的白光 LED发光装置的示意图。
图 3为本发明实施例 3的白光 LED发光装置的示意图。
图 4为本发明实施例 4的白光 LED发光装置的示意图。
图 5为本发明实施例 5的白光 LED发光装置的示意图。
图 6为本发明实施例 6的白光 LED发光装置的示意图。
图 7为本发明实施例 7的白光 LED发光装置的示意图。
图 8为本发明实施例 8的白光 LED发光装置的示意图。
图 9为本发明实施例 9的白光 LED发光装置的示意图。 图 10为本发明实施例 10的白光 LED发光装置的示意图。
图 11为本发明实施例 11的白光 LED发光装置的示意图。
图 12为本发明实施例 12的白光 LED发光装置的示意图。
图 13为本发明实施例 13的白光 LED发光装置的示意图。
图 14为本发明实施例 14的白光 LED发光装置的示意图。
图 15为本发明实施例 15的白光 LED发光装置的示意图。
图 16为本发明实施例 16的白光 LED发光装置的示意图。
图 17为本发明实施例 17的白光 LED发光装置的示意图。
图 18为本发明实施例 18的白光 LED发光装置的示意图。
图 19为本发明实施例 19的白光 LED发光装置的示意图。
图 20是本发明实施例 20的白光 LED发光装置的示意图。
图 21是包含荧光体的多层玻璃涂层结构示意图。
图 22是利用含荧光体玻璃涂层的玻璃基板制造白光 LED发光器件的结构示意图。
图 23是当玻璃 A的折射率 nA小于包含荧光体的玻璃 B的折射率 nB时所制造白光 LED发光器件的结构 示意图。
图 24是利用含荧光体的多层玻璃涂层的玻璃基板制造白光 LED发光器件的结构示意图。
图 25是包含多层荧光体的玻璃涂层的柱面型基板的结构示意图。
具体实施方式
为了更了解本发明的技术内容， 特举具体实施例并配合所附图式说明如下。
图 1为本发明实施例 1的白光 LED发光装置的示意图。白光 LED发光装置包括：底座 1、蓝光 LED 芯片 2、 反光罩 3和玻璃基板 5。
其中， 反光罩 3的两端分别连接底座 1和玻璃基板 5， 蓝光 LED芯片 2设置在底座 1面对玻璃基 板 5的一面， 且蓝光 LED芯片 2的电极引线穿出底座 1， 玻璃基板 5的一个表面上涂覆含荧光体的玻 璃涂层 4 (转换层）， 包含荧光体的玻璃涂层 4的折射率小于玻璃基板 5的折射率， 此时，玻璃基板 5有 玻璃涂层 4的一面朝向底座 1上的蓝光 LED芯片 2， 以提高发光器件的白光提取效率。
本实施例的发光装置中， 为了获得白光， 荧光体可以是 LED黄色荧光粉。为了提高白光的显色指 数， 荧光体也可以是任意比例的 LED绿色荧光粉与 LED红色荧光粉的混合物， 或者是 LED黄色荧光粉 与少量 LED红色荧光粉的混合物。 可以通过调节荧光粉的比例来调节发光颜色， 或着说色温， 只要调 节比例就可以获得全色温范围的 LED光。
本实施例的发光装置中，含有荧光体的玻璃涂层 4可以采用 2层涂层结构，且每层的涂层厚度是 3微米至 5毫米。 两层涂层中的玻璃材质一致， 都是一种低熔点玻璃。 两层涂层中的荧光体可以分别 是 LED绿色荧光粉和 LED红色荧光粉， 或者分别是 LED黄色荧光粉和 LED红色荧光粉。 但是两层涂层 中的荧光体成分不一样。
本实施例中， 发光装置的底座 1兼有散热功能。
本实施例中，发光装置的 LED蓝光芯片 2可以是外延生长在 SiC基板上的，或是生长在宝石 (A1203) 基板上的，或是生长在 Si基板上的， 或是在上述三种基板中的任意一种上生长后被转移到其他基板上 的。
本实施例中， 发光装置的 LED蓝光芯片 2可以是单颗的， 或者是多颗（芯片组） 的， 多颗芯片组 可以是通过连接线串联、 或并联、 或混联。
在 LED蓝光芯片 2与包含荧光体的玻璃涂层 4之间设有反光罩 3， 目的是将 LED蓝光芯片 2发出 的蓝光反射到包含荧光体的玻璃涂层 4上， 激发荧光体发光， 经与 LED蓝光芯片 2发出的部分蓝光混 合后获得白光。
本实施例中， 反光罩呈圆柱形， 内部反射面可以镀上金属薄膜以加强光线反射效果。
图 2为本发明实施例 2的白光 LED发光装置的示意图。本实施例与实施例 1的区别在于反光罩 8 成倒圆台形， 底座 6作为倒圆台形的下底， 玻璃基板 10作为倒圆台形的上底。
图 3为本发明实施例 3的白光 LED发光装置的示意图。 本实施例与实施例 1的区别在于反光罩 13呈碗形， 底座 11作为碗底， 芯片 12， 转接口 14， 玻璃基板 15位于碗口的位置。
图 4为本发明实施例 4的白光 LED发光装置的示意图。 本实施例与实施例 1的区别在于反光罩 23呈长方体， 底座 21作为长方体的下底， LED芯片 22， 白光转换层 25， 玻璃基板 26作为长方体的上 底。 反射罩由 4个矩形的反射面 23和 24构成。 4个反射面 23和 24中相对的一组反射面几何尺寸完 全相同， 相邻的两个反射面几何尺寸可以相同， 也可以不同， 其形状可以是正方形或长方形。
图 5为本发明实施例 5的白光 LED发光装置的示意图。 本实施例与实施例 1的区别在于反光罩 29呈倒棱台形， 底座 27作为倒棱台形的下底， LED芯片 28、 白光转换层 31、 玻璃基板 32作为倒棱台 形的上底。 反射罩由 4个倒梯形的反射面 29和 30构成。 4个反射面 29和 30中相对的一组反射面几 何尺寸完全相同， 相邻的两个反射面几何尺寸可以相同， 也可以不同。
图 6为本发明实施例 6的白光 LED发光装置的示意图。本实施例与实施例 1的区别在于反光罩呈 半圆柱形， 具有反射面 41和 42， 底座 39与半圆柱形的矩形面平行设置， 当然底座 39也可以与半圆 柱形的矩形面非平行设置， LED芯片 40、 白光转换层 43， 玻璃基板 44作为半圆柱形的矩形面。
图 7-12分别为本发明实施例 7-12的白光 LED发光装置的示意图。 实施例 7_12的与实施例 1_6 的区别分别在于， 白光 LED发光装置还包括透镜， 透镜的一个平面与玻璃基板密切贴合。
实施例 7中， 图 7中透镜的外轮廓 52呈半球面形，透镜底部 51与玻璃基板 5利用硅胶或树脂材 料进行密合。
实施例 8-11中， 图 8-11中透镜的外轮廓 54、 56、 60、 62呈类似半球面形， 透镜底部 53、 55、 59、 61分别与玻璃基板 10、 15、 26、 32利用硅胶或树脂材料进行密合。
实施例 12中， 图 12中透镜的外轮廓 64呈半圆柱形， 透镜底部 65与玻璃基板 44利用硅胶或树 脂材料进行密合。
进一步， 上述实施例中， 透镜由玻璃材质、 或亚克力材质、 或其它任何透明固体材料制成。 上述实施例中， 均是以玻璃涂层 4的折射率小于玻璃基板 5的折射率的情形来说明的。反之， 如 果包含荧光体的玻璃涂层的折射率大于玻璃基板 5的折射率， 则玻璃基板 5没有玻璃涂层 4的一面朝 向底座 1上的蓝光 LED芯片 2。
图 13为本发明实施例 13的白光 LED发光装置的示意图。本实施例与实施例 1的区别在于，图 13 中白光 LED发光装置包括： 底座 67、 蓝光 LED芯片 68、 红光 LED芯片 69、 反光罩 70和玻璃基板 72 (包含涂层或转换层 71 )。
13中， 反光罩 70的两端分别连接底座 67和玻璃基板 72， 蓝光 LED芯片 68和红光 LED芯片 69设 置在底座 67面对玻璃基板的一面，且蓝光 LED芯片组及红光 LED芯片组的电极引线穿出底座，或含有荧 光体的玻璃涂层的一面可以迎着 LED蓝光芯片和红光芯片出射光线，也可以反向设置。本实施例中， LED 蓝光芯片可以是宝石 (A1203)衬底上生长的蓝光芯片， 也可以是 SiC衬底上生长的蓝光芯片， 或者是 Si 衬底上生长的蓝光芯片， 或是在上述三种基板中的任意一种上生长后被转移到其他基板上的。红光 LED 芯片可以是 III/V族化合物半导体红光芯片 （如 InGaAlP) 或其衍生品种。
本实施例中， 蓝光 LED芯片及红光 LED芯片为一组串联、并联或混联的芯片。红光芯片应在几何 上对称安置以保证红光光线分布均匀。 为了获得暖白光， 红光芯片的设置原则为， 红光 LED芯片所发 红光的光通量与红光 LED 芯片所发红光的光通量与蓝光 LED 芯片所发蓝光的光通量的总和之比为 0. 5%〜25%。
在本实施例中， 玻璃基板的涂层所包含的荧光体是任意一种 LED黄色荧光粉。
本实施例中， 反光罩呈圆柱形， 内部反射面可以镀上金属薄膜以加强光线反射效果。
图 14为本发明实施例 14的白光 LED发光装置的示意图。 本实施例与实施例 13的区别在于反光 罩 76成倒圆台形， 底座 73作为倒圆台形的下底， 玻璃基板作为倒圆台形的上底。
图 15为本发明实施例 15的白光 LED发光装置的示意图。 本实施例与实施例 13的区别在于反光 罩 82呈碗形， 底座 79作为碗底， 玻璃基板位于碗口的位置。
图 16为本发明实施例 16的白光 LED发光装置的示意图。 本实施例与实施例 13的区别在于反光 罩呈长方体， 底座 85作为长方体的下底， 玻璃基板作为长方体的上底。 反射罩由 4个矩形的反射面 88和 89构成。 4个反射面 88和 89中相对的一组反射面几何尺寸完全相同，相邻的两个反射面几何尺 寸可以相同， 也可以不同， 其形状可以是正方形或长方形。
图 17为本发明实施例 17的白光 LED发光装置的示意图。 本实施例与实施例 13的区别在于反光 罩呈倒棱台形， 底座 92作为倒棱台形的下底， 玻璃基板作为倒棱台形的上底。 反射罩由四个倒梯形的 反射面 95和 96构成。 四个反射面 95和 96中相对的一组反射面几何尺寸完全相同， 相邻的两个反射 面几何尺寸可以相同， 也可以不同。
图 18为本发明实施例 18的白光 LED发光装置的示意图。 本实施例与实施例 13的区别在于反光 罩呈半圆柱形， 具有反射面 104和 105， 底座 99与半圆柱形的矩形面平行设置， 或者底座 99也可以 与半圆柱形的矩形面非平行设置， 玻璃基板作为半圆柱形的矩形面。
图 19为本发明实施例 19的白光发光装置的示意图。本实施例与实施例 1的区别在于， 白光发光 装置包括： 底座 118、 蓝光 LED芯片 120、 反光罩 119和玻璃基板 119 ; 图中轮廓线 106、 107、 108、 109围成的区域为底座 118， 呈圆柱面形； 图中轮廓线 110、 111、 112、 113围成的区域为含荧光体涂 层的玻璃基板 119， 呈圆柱面型； 图中轮廓线 106、 111、 114、 116围成的区域， 轮廓线 107、 110、 115、 116围成的区域， 轮廓线 109、 112、 115、 117围成的区域及轮廓线 108、 113、 114、 115围成的区域 为光线反射罩的组成部分。
其中， 反光罩 119的两端分别连接底座 118和玻璃基板 119， 蓝光 LED芯片 120设置在底座 118 面对玻璃基板 119的一面， 且蓝光 LED芯片 120的电极引线穿出底座 118， 玻璃基板 119的一个表面 上涂覆含荧光体的玻璃涂层， 包含荧光体的玻璃涂层的折射率小于玻璃基板 119的折射率， 此时玻璃 基板 119有玻璃涂层的一面朝向底座 118上的蓝光 LED芯片 120， 以提高发光器件的白光提取效率。
其中透明基板和底座呈一类或大致一类的形状， 只是尺寸不同。
蓝光 LED芯片均匀分布于圆柱面形的底座 118上；蓝光 LED芯片 120为一组串联、并联或混联的芯 片； 蓝光 LED芯片 120是宝石 (A1203)衬底上生长的蓝光芯片， 或 SiC衬底上生长的蓝光芯片， 或 Si衬底 上生长的蓝光芯片， 或是在上述三种基板中的任意一种上生长后被转移到其他基板上的。
其中荧光体是 LED黄色荧光粉。为了提高白光的显色指数，荧光体也可以是任意比例的 LED绿色 荧光粉与 LED红色荧光粉的混合物、 或任意比例的 LED黄色荧光粉与 LED红色荧光粉的混合物。 进一 步， 其中包含荧光体的涂层采用 2层结构，且每层结构的厚度是 3微米至 5毫米。 2层结构的荧光体分 别是 LED绿色荧光粉和 LED红色荧光粉， 或 LED黄色荧光粉和 LED红色荧光粉。 为了增强反射效果， 反射罩内部反射面上镀有金属薄膜。
为了提高白光的显色指数，还可以在蓝光芯片组中均匀安放一些红光 LED芯片来调节发光装置所 发出光线的色温，此时荧光体涂层可以只包含黄色荧光粉；红光 LED芯片所发红光的光通量与红光 LED 芯片所发红光的光通量与蓝光 LED芯片所发蓝光的光通量的总和之比为 0. 3%〜27%。 红光 LED芯片可 以是 III/V族化合物半导体红光芯片 （如 InGaAlP ) 或其衍生品种。
玻璃基板接收来自蓝光芯片 （组） 120发出的蓝光激发荧光体发出黄色光线， 或黄光与红光的混 合光线， 或绿光与红光的混合光线； 荧光体受激发出的光线与蓝光芯片 120发出的部分蓝光混合获得 白光。
图 20是本发明实施例 20的白光发光装置的结构示意图。 本实施例与实施例 19的区别主要在于 玻璃基板 123呈球面型。 芯片 121、 芯片基板 122、 转接 124。
当然在其他实施例中， 玻璃基板和底座也可以是双曲面、椭圆面、 卵形面、 抛物面的凸面型、 或 柱面型的板材。 当底座和波长转换组件是球面或类球面的凸面型板材时， 反光罩是半圆锥型； 当底座 和波长转换组件是圆柱面或类圆柱面型的板材时， 底座连同与其相连的其它附件的表面起反光罩的作 用。
图 21— 24中， 125是第一涂层， 126是第二涂层， 127是热沉 （支架）， 128是蓝光 LED芯片， 129和 130是 LED芯片的电极， 131是 LED芯片的电极引线， 132是发光器件的光线反射装置， 133 是蓝光 LED芯片发出的蓝光， 134是发光装置发出的白光， 135是玻璃基板 A， 136是玻璃 B， 137是 荧光体 C， 138是荧光体 D， 139是玻璃基板 A。
以下实施例中缩丁醛树脂的分子式为 C16H2805， 乙基纤维素分子式为 [C6H702(OC2H5)3]n。
实施例 21， 玻璃 A为普通钠钙玻璃， 厚度为 1毫米， 在 460纳米波长处折射率约为 1.52, 玻璃化 转变温度 570 °C， 软化温度 620 °C;
玻璃 B为一种低熔点憐酸盐玻璃， 组分包含 P205 : 41%, ZnO: 34%， B203: 19%, (Li20 3% + Na20 1. 5% + K20 1. 5%)： 6%。 在 460纳米波长处折射率约为 1.49, 玻璃化转变温度 480 °C， 软化温度为 526 °C; 荧光体 C为 YAG黄色荧光粉， 其粒径分布 d5。为 10微米。
玻璃 B用气流粉碎设备粉碎， 其粒径分布为 d5。=15微米。
将玻璃 B粉末 20克与 YAG黄色荧光粉 3.5克加有机液体 4g (松油醇与缩丁醛树脂的混合物， 质量比为 6: 1 )进行混炼获得糊状物。在不损害本发明目的的范围内， 还可以在玻璃 B的粉末与 YAG 黄色荧光粉的混合物中加进适量的二氧化硅颗粒或三氧化铝颗粒来增强光线散射， 从而改善光线的混 合效果。
运用刀片式涂布机将上述糊状物均匀涂覆在清洁过的玻璃 A基板上， 涂覆糊状物的厚度通过调 节刀片到玻璃基板的距离来控制， 刀刃至玻璃基板的距离为 0.2毫米。
为了防止玻璃 A的成分与玻璃 B的成分在后面的烧结过程中相互扩散， 可以在涂覆前在玻璃 A基 板上先涂覆一层 Si02膜。 涂覆 Si02膜可以采用化学方法， 如溶胶一凝胶方法， 或使用物理方法， 如溅 射方法等。
将涂覆了糊状物的玻璃板在 160 °C干燥 1小时，然后先冷却至室温。用 1小时升温到 430 °C保温 1小时， 然后用 21分钟快速升温到至 540 °C保温 1小时， 再用 2小时降温至室温。 这样在玻璃 A的基 板上就获得了包含荧光体的玻璃涂层。
在该实施例中包含荧光体的玻璃涂层在烧结后透明， 表面光滑， 边缘无翘角。
使用 1W的 SiC基板上生长的蓝光芯片， 蓝光芯片发出的蓝光照射带有包含荧光体的玻璃 B涂 层的玻璃 A基板后， 获得明亮的白光 (128 1mAV)。
实施例 22， 本实施例与实施例 21的区别在于， 将玻璃 B粉末 20克与 YAG黄色荧光粉 3.5克加 有机液体 4.5g (松油醇与乙基纤维素的混合物， 质量比为 6. 6: 1 ) 进行混炼获得糊状物。
本实施例中的烧结过程为： 将涂覆了糊状物的玻璃板在 170 °C干燥 1小时， 然后先冷却至室温。 用 1小时升温到 450 °C保温 1小时，然后用 21分钟快速升温到至 550 °C保温 1小时， 再用 2小时降温 至室温。 这样在玻璃 A的基板上就获得了包含荧光体的玻璃涂层。
在该实施例中包含荧光体的玻璃涂层在烧结后透明， 表面光滑， 边缘无翘角。
使用 1W的 SiC基板上生长的蓝光芯片， 蓝光芯片发出的蓝光照射带有包含荧光体的玻璃 B涂 层的玻璃 A基板后， 获得明亮的白光 (125 1mAV)。
实施例 23， 本实施例与实施例 21的区别在于， 将玻璃 B粉末 20克与 YAG黄色荧光粉 0.2克加 有机液体 4g (松油醇与缩丁醛树脂的混合物， 质量比为 6: 1 ) 进行混炼获得糊状物。
在该实施例中包含荧光体的玻璃涂层在烧结后透明， 表面光滑， 边缘无翘角。
使用 1W的 SiC基板上生长的蓝光芯片， 蓝光芯片发出的蓝光照射带有包含荧光体的玻璃 B涂 层的玻璃 A基板后， 获得偏蓝色的白光 (135 lm/W)。 这是因为蓝光芯片发出的蓝光少部分被荧光玻璃 吸收发出黄光， 而剩余的透出的蓝光较多， 总的混合光中缺乏黄光成分。
实施例 24， 本实施例与实施例 21的区别在于， 将玻璃 B粉末 20克与 YAG黄色荧光粉 25克加 有机液体 4g (松油醇与缩丁醛树脂的混合物， 质量比为 6: 1 ) 进行混炼获得糊状物。
在该实施例中包含荧光体的玻璃涂层在烧结后透明， 表面光滑， 边缘无翘角。
使用 1W的 SiC基板上生长的蓝光芯片， 蓝光芯片发出的蓝光照射带有包含荧光体的玻璃 B涂 层的玻璃 A基板后， 获得偏黄色的白光（85 1m/W)。 这是因为蓝光芯片发出的蓝光大部分被荧光玻璃 吸收发出黄光， 而剩余的蓝光较少， 总的混合光中缺乏蓝光成分； 另外， 由于高密度荧光粉颗粒对光 线的散射作用使得涂层的透光性降低， 因此总的混合光的强度降低。
实施例 25，本实施例与实施例 21的区别在于，运用刀片式涂布机将上述糊状物均匀涂覆在清洁 过的玻璃 A基板上时， 刀刃至玻璃基板的距离为 5毫米。
在该实施例中包含荧光体的玻璃涂层在烧结后透明， 表面光滑， 边缘无翘角。
使用 1W的 SiC基板上生长的蓝光芯片， 蓝光芯片发出的蓝光照射带有包含荧光体的玻璃 B涂 层的玻璃 A基板后， 获得略偏黄色的白光（95 1m/W)。 这是因为蓝光芯片发出的蓝光大部分被荧光玻 璃吸收发出黄光， 而剩余的透出的蓝光较少， 总的混合光中缺乏蓝光成分。
实施例 26， 本实施例与实施例 21 的区别在于所使用的玻璃 B组分为 (摩尔比）： P205: 28%, Bi203: 16%, Nb205: 17.5%, ZnO: 23, Li20: 5%, W03: 10.5%。 其在 460纳米波长处折射率为 1.99， 玻璃化 转变温度 489 °C， 软化温度为 535 °C。
本实施例中的烧结过程为： 将涂覆了糊状物的玻璃板在 160 °C干燥 1小时， 然后先冷却至室温。 用 1小时升温到 430 °C保温 1小时，然后用 23分钟快速升温到至 550 °C保温 1小时， 再用 2小时降温 至室温。 这样在玻璃 A的基板上就获得了包含荧光体的玻璃涂层。
在该实施例中包含荧光体的玻璃涂层在烧结后透明， 表面光滑， 边缘无翘角。
使用 1W的 SiC基板上生长的蓝光芯片， 蓝光芯片发出的蓝光照射带有包含荧光体的玻璃 B涂 层的玻璃 A基板后 （有玻璃涂层的一面背对蓝光芯片）， 获得明亮的白光 (116 1mAV)。
实施例 27， 本实施例与实施例 21的区别在于使用如图 21所示的双层含荧光体的玻璃涂层， 其 中： 125为含(5! (¾) 5 ^ 12+红色荧光粉的玻璃涂层， 126为含 YAG黄色荧光粉的玻璃涂层。两层涂层的 玻璃 B的组分与实施例 21相同。 两种荧光粉颗粒的粒径分布为(15。=15微米。
本实施例与实施例 21的区别还在于制备第一涂层时， 刀刃至玻璃基板的距离为 0.01毫米， 而制 备第二涂层时， 刀刃至玻璃基板的距离为 0.2毫米。 在该实施例中包含荧光体的两层玻璃涂层在烧结 后透明， 表面光滑， 边缘无翘角。 使用 1W的 SiC基板上生长的蓝光芯片， 蓝光芯片发出的蓝光照射 带有包含荧光体的玻璃 B涂层的玻璃 A基板后， 获得明亮的白光 (84 1mAV)。
玻璃基板 135可以是凸面型、或柱面型。将包含荧光体的玻璃涂层的玻璃基板安装到有蓝光发光 原件的安装部上， 就可以获得白光 LED发光装置。
实施例 28， 作为具体实施例之一， 图 25中玻璃基板 A为普通钠钙玻璃， 表面是球形面的一部分， 玻璃基板 A还可以呈柱面型， 厚度为 1毫米， 玻璃化转变温度 570 °C， 软化温度 620 °C。
作为具体实施例之一， 玻璃 B也可为一种低熔点憐酸盐玻璃， 组分包含 P205 : 41%， ZnO: 34%， B203 : 19%, (Li20 3% + Na20 1. 5% + K20 1. 5%) : 6%。 玻璃化转变温度 480 °C， 软化温度为 526 °C; 荧光体 C 为 YAG黄色荧光粉， 其粒径分布 d5。为 10微米。
玻璃 B粉末的粒径分布为 d5。=15微米。 将玻璃 B粉末 20克与 YAG黄色荧光粉 3. 5克加有机液体 4g (松油醇与缩丁醛树脂的混合物， 质量比为 6: 1 ) 进行混炼获得糊状物。
运用气体喷涂方法将上述糊状物均匀涂覆在清洁过的玻璃 A基板上，涂覆糊状物的厚度通过调节 气体的气压等参数来控制。
将涂覆了糊状物的玻璃板在 160 °C干燥 1小时， 然后先冷却至室温。 用 1小时升温到 430 °C保温 1小时， 然后用 21分钟快速升温到至 540 °C保温 1小时， 再用 2小时降温至室温。 这样在玻璃 A的基 板上就获得了包含荧光体的玻璃 B涂层。
在该实施例中包含荧光体的玻璃涂层在烧结后透明， 表面光滑， 边缘无翘角。
为了提高憐酸盐玻璃涂层的化学稳定性， 在其表面可以涂覆一层 S i02或 Zr02薄膜等。 涂覆 Si02等 膜可以采用化学方法， 如溶胶一凝胶方法， 或使用物理方法， 如溅射方法等。
使用 1W的 SiC基板上生长的蓝光芯片， 蓝光芯片发出的蓝光照射带有包含荧光体的玻璃 B涂层 的玻璃 A基板后， 获得明亮的白光（126 lm/W)。
实施例 29， 本实施例与实施例 28的区别在于使用双层含荧光体的玻璃涂层结构， 其中：
125 为含(5! (¾) 5 ^ 12+红色荧光粉的玻璃涂层， 126 为含 YAG : Ce3+黄色荧光粉的玻璃涂层。 两层 涂层的玻璃 B的组分与实施例 28相同。 两种荧光粉颗粒的粒径分布为 d5。=15微米。
在该实施例中包含荧光体的两层玻璃涂层在烧结后透明， 表面光滑， 边缘无翘角。
使用 1W的 SiC基板上生长的蓝光芯片， 蓝光芯片发出的蓝光照射带有包含荧光体的玻璃 B涂层 的玻璃 A基板后， 获得明亮的白光 (84 lm/W)。 实施例 30， 为了获得白光， 荧光体可以是 LED黄色荧光粉。 为了提高白光的显色指数， 荧光体 也可以是任意比例的 LED绿色荧光粉与 LED红色荧光粉的混合物， 或者是 LED黄色荧光粉与少量 LED 红色荧光粉的混合物。 可以通过调节荧光粉的比例来调节发光颜色， 或者说色温， 只要调节比例就可 以获得全色温范围的 LED光。 作为具体实施例之一， 含有荧光体的玻璃涂层可以采用 2层涂层结构， 且每层的涂层厚度是 3微米至 5毫米。 两层涂层中的玻璃材质一致， 两层涂层中的荧光体可以分别是 LED绿色荧光粉和 LED红色荧光粉， 或者分别是 LED黄色荧光粉和 LED红色荧光粉。 但是两层涂层中 的荧光体成分不一样。
作为具体实施例之一， 发光装置的底座兼有散热功能。
作为具体实施例之一，发光装置的 LED蓝光芯片可以是外延生长在 S iC基板上的，或是生长在宝 石 (A1203)基板上的， 或是生长在 Si基板上的， 或是在上述三种基板中的任意一种上生长后被转移到 其他基板上的。
作为具体实施例之一， 发光装置的 LED蓝光芯片可以是单颗的， 或者是多颗（芯片组） 的， 多颗 芯片组可以是通过连接线串联、 或并联、 或混联。
作为具体实施例之一，在 LED蓝光芯片与凸面玻璃基板之间设有反光罩， 目的是将 LED蓝光芯发 出的蓝光反射到包含荧光体的玻璃涂层上， 激发荧光体发光， 经与 LED蓝光芯片发出的部分蓝光混合 后获得白光。
综上所述，本发明的发光装置中不使用硅胶或树脂， 因此不会出现因硅胶或树脂变质导致的器件 光效下降问题； LED 蓝光芯片表面未涂覆含荧光体的硅胶或树脂， 因此散热问题大为缓解； 发光装置 中含有荧光体玻璃涂层的玻璃板远离 LED蓝光芯片， 因此荧光体不会出现因器件散热问题导致的发光 波长漂移现象； 发光器件中， 荧光体被玻璃密封， 可以杜绝荧光体与空气中的酸性气体或水气反应而 导致的发光特性劣化问题； 蓝光芯片周围对称分布有红光芯片， 红光芯片发出的红光可以补充蓝光芯 片加黄色荧光粉组合所获得的白光中缺少的红光成分， 因此发光装置获得的白光显色指数较高； 另外， 由于红光芯片光效较高， 因此本发明中发光器件的光效比利用蓝光芯片加三基色荧光粉或黄色荧光粉 加红色荧光粉组合获得暖白光器件的光效高； 利用呈曲面均匀分布的蓝光光源及呈曲面形状的光转换 涂层获得均匀的白光， 且白光照射区域可以有效扩大； 发光装置在结构上不需要二次光学设计就可以 获得大面积的均匀光照。
虽然本发明已以较佳实施例揭露如上，然其并非用以限定本发明。本发明所属技术领域中具有通 常知识者， 在不脱离本发明的精神和范围内， 当可作各种的更动与润饰。 因此， 本发明的保护范围当 视权利要求书所界定者为准。

Claims

权利要求书
1、 一种白光 LED发光装置， 其特征在于， 包括： 底座、 蓝光 LED芯片、 反光罩和玻璃基板,反 光罩的两端分别连接底座和玻璃基板， 蓝光 LED芯片设置在底座面对玻璃基板的一面， 且蓝光 LED芯 片的电极引线穿出底座， 玻璃基板的一个表面上涂覆含荧光体的玻璃涂层 （或称为荧光玻璃涂层）， 当 荧光玻璃涂层的折射率小于玻璃基板的折射率时， 玻璃基板涂有荧光玻璃涂层的一面朝向底座， 当荧光 玻璃涂层的折射率大于玻璃基板的折射率时， 玻璃基板没有荧光玻璃涂层的一面朝向底座。
2、根据权利要求 1所述的白光 LED发光装置， 其特征在于， LED芯片是宝石 (A1203)衬底上生长的蓝 光芯片、 SiC衬底上生长的蓝光芯片、 Si衬底上生长的蓝光芯片或是在上述三种基板中的任意一种上生 长后被转移到其他基板上的。
3、 根据权利要求 2所述的白光 LED发光装置， 其特征在于， 荧光体是 LED黄色荧光粉； 任意比例 的 LED绿色荧光粉与 LED红色荧光粉的混合物、或任意比例的 LED黄色荧光粉与 LED红色荧光粉的混合 物。
4、根据权利要求 2所述的白光 LED发光装置， 其特征在于， 包含荧光体的玻璃涂层采用 2层涂层 结构，且每层的涂层厚度是 3微米至 5毫米。
5、根据权利要求 1所述的白光 LED发光装置， 其特征在于， 其中反射罩内部反射面上镀有金属薄 膜。
6、 根据权利要求 1所述的白光 LED发光装置， 其特征在于， 其中反光罩呈圆柱形， 底座和玻璃基 板分别作为所述圆柱形的两个底面； 或反光罩呈倒圆台形或碗形， 底座作为倒圆台的下底或碗底， 玻璃 基板作为倒圆台形的上底或位于碗口的位置；或反光罩呈长方体或倒棱台形，底座作为长方体的下底或 倒棱台形的下底， 玻璃基板作为长方体的下底或倒棱台形的上盖； 或反光罩呈半圆柱形， 底座沿着一条 直线设置，该直线与半圆柱形的矩形面平行，且该直线落在通过柱轴并与半圆柱的矩形面垂直的平面内， 玻璃基板作为半圆柱形的矩形面。
7、根据权利要求 1所述的白光 LED发光装置，其特征在于，所述含荧光体的玻璃涂层的制备方法:
( 1 )将质量比为 100: 1~100: 150的玻璃 B的粉末与荧光体 C的粉末、有机溶剂及粘结剂， 混合成均 匀的糊状物； （2)将糊状物均匀涂覆在玻璃基板上， 将涂有糊状物的玻璃基板干燥， 使有机溶剂挥发完 全； （3 )将干燥后的涂有糊状物的玻璃基板烧结， 在玻璃基板表面得到含有荧光体的玻璃涂层， 所述烧 结的过程为： 升温至温度 Dl， 使粘结剂分解挥发完全后， 再升温至温度 D2， 使玻璃 B的粉末软化、 结合 形成连续玻璃体， 在玻璃基板 A表面得到含有荧光体 C的玻璃涂层， 温度 D1 低于玻璃 B的玻璃化转变温 度， 温度 D2低于玻璃 A的玻璃化转变温度 10 °C以上。
8、 根据权利要求 7所述的白光 LED发光装置， 其特征在于， 步骤 （1 ) 中， 有机溶剂与粘结剂的 质量比为 10: 1-10： 10，其中有机溶剂为丁基卡必醇已酸酯、邻苯二甲酸酯、聚乙烯醇、松油醇、 2，2，4- 三甲基 -1， 3-戊二醇单异丁酸酯中的一种或其中两种任意比例的混合物； 粘结剂为丙烯酸类树脂、 苯乙 烯树脂、 乙基纤维素、 酚醛树脂或缩丁醛树脂中的一种或其中任意两种任意比例的混合物。
9、 根据权利要求 7所述的白光 LED发光装置， 其特征在于， 所述玻璃基板在涂覆糊状物之前， 表 面涂覆有 Si02薄膜， 所述糊状物均匀涂覆在 Si02薄膜上。
10、 根据权利要求 7所述的白光 LED发光装置， 其特征在于， 还包括步骤（4): 在步骤（3 )结束 后， 降温至室温， 将荧光体 C替换为荧光体 D， 重复步骤 （1 ) - (3 )， 在玻璃基板 A表面得到顺序含 有荧光体 C的玻璃涂层和荧光体 D的玻璃涂层。
11、 根据权利要求 7所述的白光 LED发光装置， 其特征在于， 玻璃基板 A是有碱玻璃、 无碱玻璃或 石英玻璃， 或是用有碱玻璃、 无碱玻璃或石英玻璃制备成的磨砂玻璃； 玻璃 B选 Si02-Nb205系、 B203-F 系、 P205-ZnO系、 P205-F系、 Si02-B203-La203系或 Si02-B203系低熔点玻璃； 荧光体 C是 LED黄色荧光粉、 LED绿色荧光粉与 LED红色荧光粉的混合物， 或者是 LED黄色荧光粉与少量 LED红色荧光粉的混合物， 荧 光体 C的玻璃涂层的厚度为 3微米到 5毫米。
12、 如权利要求 8— 11中任一项所述的白光 LED发光装置， 其特征在于， 步骤（3 ) 中， 使粘结剂 分解挥发完全后， 在 10分钟一 10小时内升温至温度 D2; 升温至温度 D2， 使玻璃 B软化， 在玻璃基板 表面得到含有荧光体 C的玻璃涂层后， 在 20分钟 -10小时内降温至室温。
13、根据权利要求 7所述的白光 LED发光装置，其特征是用于光学波长转换的荧光玻璃涂层烧结的 荧光体 C与玻璃 B粉末的混合层完成后， 再在涂层表面涂覆 S i 02或 Zrf 莫。
14、 根据权利要求 7所述白光 LED发光装置， 其特征在于玻璃基板 A是曲面型， 其截面的轮廓线 是圆弧的一部分、 或抛物线、 或双曲线、 或其他的弧线的一部分； 或玻璃基板 A是球面、 双曲面、 椭圆 面、 卵形面或抛物面的凸面型的板材或为柱面型。
15、 根据权利要求 14所述的白光 LED发光装置， 其特征在于， 其中反光罩呈半圆柱形， 底座沿 着一条直线设置， 该直线与半圆柱的矩形面平行，且该直线落在通过柱轴并与半圆柱的矩形面垂直的平 面内， 柱面型玻璃基板作为半圆柱形的盖；
或其中反光罩的截面轮廓线呈抛物线型， 底座沿着一条直线设置， 该直线与抛物面的焦线重合， 柱面型玻璃基板作为半圆柱形反光罩的盖；
或反光罩呈细长的长方体或细长倒棱台形， 底座作为细长长方体或细长倒棱台形的下底， 柱面型 玻璃基板作为细长长方体或倒棱台形的盖。
16、根据权利要求 14一 15之一所述的白光 LED发光装置， 其特征在于， 反光罩与透明基板之间设 有转接板或转接环。
17、 根据权利要求 7所述所述的白光 LED发光装置， 其特征在于包含荧光体的玻璃涂层采用二层 涂层结构； 所述涂层 1和涂层 2制备过程中所用的有机溶剂和粘结剂与步骤 （1 ) 中所述的有机溶剂与 粘结剂一致； 所述涂层 1和涂层 2中的荧光体是 LED黄色荧光粉、 LED绿色荧光粉或 LED红色荧光粉， 但是涂层 1和涂层 2的荧光体成分不同。
18、 白光 LED发光装置， 其特征在于， 包括底座、 蓝光 LED芯片组及红光 LED芯片组、 反光罩和 波长转换组件； 反光罩的两端分别连接底座和波长转换组件，蓝光 LED芯片组和红光 LED芯片组设置在 底座、面对波长转换组件的一个面， 且蓝光 LED芯片组和红光 LED芯片组的电极引线穿出底座； 荧光体 的涂层设在在波长转换组件的迎着 LED蓝光芯片和红光芯片出射光线的一面或在另一面。
19、 根据权利要求 18所述的白光 LED发光装置， 其特征在于， LED蓝光芯片是宝石 (A1203)衬底 上生长的蓝光芯片， 或是 SiC衬底上生长的蓝光芯片， 或者是 Si衬底上生长的蓝光芯片， 或是在上述 三种基板中的任意一种上生长后被转移到其他基板上的；红光 LED芯片包括 III/V族化合物半导体红光 芯片及其衍生品种。
20、根据权利要求 19所述的暖白光 LED发光装置， 其特征在于， 蓝光 LED芯片及红光 LED芯片为 一组串联、并联或混联的芯片； 红光 LED芯片所发红光的光通量与红光 LED芯片所发红光的光通量与蓝 光 LED芯片所发蓝光的光通量的总和之比为 0. 5%〜25%。
21、根据权利要求 18所述的暖白光 LED发光装置， 其特征在于， 其中反射罩为一体化反射罩或反 射罩内部反射面上镀有金属薄膜、反光罩呈圆柱形，底座和波长转换组件分别作为所述圆柱形的两个底 面。
22、根据权利要求 18— 21所述的暖白光 LED发光装置， 其特征在于， 波长转换组件为涂有包含荧 光体的有机涂层的透明树脂板或玻璃板、 或涂有包含荧光体的玻璃涂层的玻璃板。
23、 根据权利要求 18— 21所述的暖白光 LED发光装置， 其特征在于， 波长转换组件呈多种物理 形状， 如平板型、 球面型、 抛物面型、 柱面型、 双曲面型或任意弧面型。
24、根据权利要求 22所述的暖白光 LED发光装置， 其特征在于， 波长转换组件中有机涂层所包含 的荧光体是包括 YAG黄色荧光粉、 或硅酸盐黄色荧光粉的任意一种 LED黄色荧光粉。
PCT/CN2013/074277 2012-04-26 2013-04-16 一种白光led发光装置及制备方法 WO2013159664A1 (zh)

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CN2012101271904A CN102646674A (zh) 2012-04-26 2012-04-26 白光led发光装置
CN201210294570.7A CN102945914B (zh) 2012-08-17 2012-08-17 一种用于光学波长转换的荧光玻璃涂层及白光发光装置
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