WO2013156444A1 - Dispositif à diode laser - Google Patents

Dispositif à diode laser Download PDF

Info

Publication number
WO2013156444A1
WO2013156444A1 PCT/EP2013/057810 EP2013057810W WO2013156444A1 WO 2013156444 A1 WO2013156444 A1 WO 2013156444A1 EP 2013057810 W EP2013057810 W EP 2013057810W WO 2013156444 A1 WO2013156444 A1 WO 2013156444A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser diode
housing
diode device
diode chip
cover
Prior art date
Application number
PCT/EP2013/057810
Other languages
German (de)
English (en)
Inventor
Karsten Auen
Uwe Strauss
Thomas Hoefer
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2013156444A1 publication Critical patent/WO2013156444A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02484—Sapphire or diamond heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02492—CuW heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Definitions

  • Laser Diode Device A laser diode device is specified.
  • the laser diode device comprises a housing.
  • the components of the laser diode device In the housing, the components of the laser diode device
  • Laser diode device can be arranged.
  • the housing has a cavity.
  • the cavity can be
  • the cavity of the housing is bounded on its bottom surface by a mounting surface of the housing.
  • the mounting surface is provided for mounting components of the laser diode device to it.
  • the cavity may also be delimited, in addition to the bottom surface, by side surfaces which run perpendicular or obliquely to the mounting surface of the cavity.
  • the cavity of the housing is adapted to receive the components of the laser diode device.
  • Laser diode device the laser diode device comprises a laser diode chip, the electromagnetic in operation Radiation emitted by a radiation exit surface.
  • the laser diode chip is in particular designed to be in
  • the laser diode chip can be configured to emit UV radiation, blue light, green light, red light or infrared radiation during operation.
  • the laser diode chip is a
  • Laser diode chip based on a nitride compound semiconductor material.
  • nitride compound semiconductor material means in the present context that a
  • a nitride compound semiconductor material preferably Al n Ga m In ] __ n _ m N or consists of this, where 0 ⁇ n ⁇ 1 , 0 ⁇ m ⁇ 1 and n + m ⁇ 1.
  • this material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it may, for example, have one or more dopants and additional constituents.
  • the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, N), even if these can be partially replaced and / or supplemented by small amounts of further substances.
  • the laser diode chip may have an epitaxially grown semiconductor layer sequence comprising an active layer, which is formed for example on the basis of AlGalnN and / or InGaN.
  • the active layer is then configured to operate in electromagnetic mode
  • the laser diode chip may have, for example, a conventional pn junction, a double heterostructure or a quantum well structure, particularly preferably one
  • the laser diode chip is characterized in particular by a high optical output power.
  • the optical output power of the laser diode chip is at least 1 W, in particular at least 3 W.
  • the laser diode chip comprises a radiation exit surface.
  • the radiation exit surface is that surface of the
  • Laser diode chips through which at least a majority of the radiation emitted during operation of the laser diode chip the radiation
  • the radiation exit surface is, for example, through the part of a side surface of
  • the laser diode chip is then in particular a
  • the laser diode device comprises a cover, which is at least locally permeable to the electromagnetic radiation generated by the laser diode chip in operation. That is, in the operation of the
  • the cover element may have areas that are suitable for the
  • the laser diode device comprises a deflection element, the at least a part of the
  • Laser diode chip generated in operation generates electromagnetic radiation in the direction of the cover.
  • electromagnetic radiation exits from the radiation exit surface of the laser diode chip and subsequently strikes the deflection element. From the deflection element, the radiation is conducted by optical refraction and / or reflection to the cover. That is, the deflecting element changes the main radiation direction of the electromagnetic radiation generated by the laser diode chip in operation, for example by an angle between 80 ° and 100 °. According to at least one embodiment of the
  • Laser diode device extends the radiation exit surface of the laser diode chip transverse or perpendicular to the mounting surface and / or the cover.
  • the laser diode chip emits its radiation such that it is partially parallel to the mounting surface and / or to the
  • Main extension plane of the cover extends. Furthermore, part of the laser diode chip runs during operation
  • Radiation exit surface of the laser diode chip is not arranged parallel to the mounting surface.
  • the electromagnetic radiation generated by the laser diode chip in operation is not directly on the radiation exit surface of the mounting surface, for example, in the direction of the cover, directed.
  • Distance from the radiation exit surface is arranged.
  • the cover is connected to the housing.
  • the cover is at a distance from the mounting surface.
  • the cover element that is to say its main extension plane, can then be at least
  • Laser diode device seals the cover the housing tight.
  • the cover closes the housing tightly against atmospheric gases and / or
  • the cover closes the housing in particular hermetically. That is, the cover member covers
  • the cavity of the housing completely and closes the cavity and thus the components of
  • the cavity can also be filled with a protective gas, for example a noble gas, which is prevented from leaving the cavity by the cover element sealing the housing in a sealed manner.
  • a protective gas for example a noble gas
  • the cavity is evacuated.
  • the housing is preferably sealed so tightly that the leak rate for incoming or outgoing gas is at most 5 * 10 A (-8) Pa m A (3) / s.
  • the laser diode device comprises a housing having a mounting surface in a cavity of the housing. Furthermore, the laser diode device comprises at least one laser diode chip which is in operation
  • Laser diode device at least one cover element, which generated for the laser diode chip in operation
  • the laser diode device further comprises a deflection element, which at least part of the
  • Laser diode chip in operation deflects generated electromagnetic radiation in the direction of the cover, wherein the radiation exit surface of the laser diode chip transversely or perpendicular to the mounting surface and / or the cover extends, the cover is connected to the housing, and the cover sealingly closes the housing.
  • the laser diode device comprises at least two, preferably a plurality of laser diode chips.
  • the laser diode chips can be designed identically. That is, the laser diode device then includes, for example, only identical laser diode chips.
  • the laser diode chips By mounting the laser diode chips on the mounting surface of the housing, the laser diode chips can be very well thermally connected to the housing. This enables an efficient dissipation of heat generated during operation.
  • the laser diode chips can be very well thermally connected to the housing. This enables an efficient dissipation of heat generated during operation.
  • the laser diode chips can be very well thermally connected to the housing. This enables an efficient dissipation of heat generated during operation.
  • the laser diode chips can be very well thermally connected to the housing. This enables an efficient dissipation of heat generated during operation.
  • the laser diode chips can be very well thermally connected to the housing. This enables an efficient dissipation of heat
  • housing it is necessary to overmold the laser diode chip with a plastic.
  • These housings are thus not suitable for laser diode chips of high optical output power, since these plastics do not withstand the optical power densities and / or the short wavelengths of the radiation generated by the laser diode chip during operation. Furthermore, it is not possible with such plastics to close the laser diode chips tightly in the housings.
  • the at least one laser diode chip is non-poured. That is, the cavity of the housing is not with a potting material, such as a
  • Radiation exit surface of the laser diode chip is adjacent to the cavity of the housing filling gas, such as a protective gas or air. Furthermore, it is possible that the Housing is totally free of a plastic material and, for example, with metallic and / or ceramic
  • Laser diode device has the cover a
  • the enclosure is with another
  • the enclosure is formed with a material that is generated for the at least one laser diode chip in operation
  • electromagnetic radiation is not permeable.
  • Window element is formed with a material which is permeable to at least a portion of the electromagnetic radiation generated by the laser diode chip in operation.
  • the enclosure may be formed, for example, with a metal such as stainless steel.
  • the window element is formed with a radiation-transmissive material.
  • the material of the window element comprises one of the following materials or consists of one of the following materials: glass, sapphire, ceramic. The window element can do this
  • the window element be transparent, clear or translucent milky.
  • at least one other material such as
  • a luminescence conversion material or a radiation-scattering material is introduced.
  • Window element may in this case have radiation-scattering or radiation-converting properties.
  • Laser diode device is the mount by soldering or Welding connected to the housing.
  • the housing at least in the area in which it to the
  • Covering borders be formed with a metal.
  • the casing and housing are connected by welding. This allows a particularly temperature-stable and tight connection between the two elements.
  • the cover member and the housing by soldering together
  • a metallic solder or a glass solder can be used as a connecting means.
  • Laser diode device is attached to the cover element of at least one of the following optical elements:
  • Luminescence conversion element, lens, scattering element It is particularly possible that several of these elements are attached to the cover.
  • the elements may in this case both on the side of the cover element facing the at least one laser diode chip, and on the side of the cover element which faces away from the at least one laser diode chip
  • the elements can be immediate or
  • a Lumineszenzkonversionselement be arranged, on which in turn a lens is arranged.
  • the lens is then indirectly attached to the cover, whereas the luminescence conversion element is attached directly to the cover.
  • the laser diode device may be adapted to in Operation to generate white light.
  • the at least one laser diode chip generates blue light or UV radiation in this case.
  • the luminescence conversion element convert at least a portion of this light into electromagnetic radiation of longer wavelengths.
  • the deflection element is formed by one of the following optical elements or comprises at least one of the following optical elements: mirror, prism. That is, deflection of the generated by at least one laser diode chip in operation electromagnetic radiation in the direction of the cover can be done by reflection and / or optical refraction.
  • the laser diode device comprises at least one heat conducting element, which between the
  • the heat-conducting element can serve, in particular, to widen or spread apart the heat flow generated during operation of the laser diode chip between the laser diode chip and the mounting surface in order to form a large transition surface during heat transfer from
  • the housing can then be mounted with its side facing away from the mounting surface directly on a heat sink. In this way, a particularly short distance between the laser diode chip and
  • Heatsink allows, so that the heat from the laser diode chip can be dissipated effectively.
  • Laser diode chip generated heat to a particularly large Area can be distributed.
  • the use of multiple laser diode chips in the housing is possible without causing a significant deterioration of the thermal connection of the individual laser diode chips.
  • Laser diode chips can be reduced in this way.
  • the heat-conducting element can furthermore be used to reduce or compensate for thermal stresses between the laser diode chip and the housing, which are caused, for example, by different thermal expansion coefficients.
  • the heat-conducting element can be fastened, for example, by means of soldering to the laser diode chip and to the mounting surface.
  • the heat-conducting element may in particular be formed by at least one of the following materials or consist of one of the following materials: silicon carbide, boron nitride, copper tungsten, diamond, aluminum nitride.
  • the heat conducting element is formed with an electrically conductive material and an electrical connection of the laser diode chip through the
  • the laser diode device comprises at least two laser diode chips, wherein each laser diode chip, a heat conducting element is uniquely associated. That is, in this case, not all the laser diode chips are arranged on a common heat conduction member, but each
  • Laser diode chip is arranged on its own heat conducting element.
  • the laser diode chips can in this case already be attached before mounting in the cavity of the housing on their associated heat conducting and as
  • the housing is formed with a metallic material.
  • the housing comprises a housing base, which consists of a metallic material.
  • the housing may have one
  • Housing body consisting of a FeNiCo alloy and / or a WCu alloy.
  • the housing base body can be covered or locally covered with a metallic layer, for example of Ni / Au or Au.
  • Housing may be a housing that is similar to a so-called butterfly housing. In deviation from conventional butterfly housings, the present
  • Housing a cover, which closes the housing cavity on a housing top and is formed with a material, at least in places
  • Laser diode device the housing has at least one
  • the sidewall or sidewalls define the housing in a lateral direction that is parallel to the mounting surface, for example.
  • the side wall of the housing is inclined or perpendicular to the mounting surface.
  • the side wall of the housing connects the mounting surface with the cover.
  • the cover may be attached to the mounting surface facing away from the side wall.
  • the side wall has at least one opening through which an electrical connection element is guided, with which the laser diode chip is electrically conductively connected.
  • the electrical connection element which is guided through the opening into the cavity of the housing, is fixed in an electrically insulating manner in the opening of the side wall.
  • the electrical connection element is formed, for example, as a pin or pin made of an electrically conductive material, such as a metal, which projects from outside the housing through the opening into the cavity of the housing. There, in the housing cavity, the connection element can then be electrically conductively connected to a laser diode chip, for example, by means of a connecting wire.
  • Connection elements corresponds at least to the number of laser diode chips.
  • each laser diode chip is electrically conductively connected to precisely one connection element.
  • the laser diode device may then comprise, for example, ten, twelve, fourteen or more connection elements and an equal number of laser diode chips. But it is also conceivable that the laser diode chips within the housing in series
  • connection elements are interconnected and then only two connection elements are required for several laser diode chips, so that the number of connection elements is smaller than the number of
  • Laser diode device is between the Radiation exit surface of the at least one
  • the optical element may be a lens, such as a cylindrical lens.
  • a plurality of beam-shaping optical elements can be arranged between the radiation exit surface and the deflecting element, which are passed through in succession by the electromagnetic radiation which is emitted by the laser diode chip during operation.
  • the one or more deflection elements for example, for slow axis and / or fast axis collimation of the laser radiation
  • Laser diode chips are arranged in the housing of the laser diode device relatively close to each other, without overlapping the beam lobes of the individual laser diode chips within the housing.
  • the beam lobes overlap each other at least at the element at their half width. If the beam lobes are to be guided separately outside the housing, the beam lobes should at least be superimposed on the exit from the housing by no more than 10%.
  • the deflecting element and the beam-shaping optical element may be attached to the mounting surface, for example by gluing.
  • the laser diode device comprises at least two laser diode chips, wherein the
  • Radiation exit surfaces of two of the laser diode chips face each other and between the two
  • Laser diode chips at least one deflection element is arranged.
  • the deflecting element is thus arranged between two laser diode chips facing each other.
  • the deflecting element is designed such that laser radiation from one of
  • Laser diode chips can not get to the other of the laser diode chips.
  • the optically active surfaces of the deflecting element are the optically active surfaces of the deflecting element.
  • the laser diode device in this case comprises a single deflecting element extending along it
  • Center axis extends. Left and right of the deflecting the laser diode chips can then be arranged axially symmetrical or offset from each other.
  • FIG. 1A shows a schematic perspective view of a first exemplary embodiment of a laser diode device described here.
  • FIG. 1B shows an associated schematic
  • FIGS 2, 3, 4, 5 and 6 show schematic
  • FIG. 1A A first exemplary embodiment of a laser diode device described here is shown in a schematic perspective illustration in FIG. 1A.
  • FIG. 1B shows an associated sectional view along the section line A-A '.
  • the laser diode device comprises a housing 10.
  • the housing 10 is formed with a metal.
  • the housing 10 has a cavity 19 in which the components of
  • Laser diode device are arranged.
  • each laser diode chip 1 is mounted in the cavity 19 of the housing 10 on the mounting surface 11 of the housing. Between the mounting surface 11 and the laser diode chips 1, a respective heat conducting element 3 is arranged, wherein each laser diode chip 1 a
  • the laser diode chips 1 each have
  • the laser diode chips 1 are in two rows
  • the optical deflecting element 2 is a deflecting mirror which has two mirrored surfaces which respectively face the radiation exit surfaces 1a of the laser diode chips 1. From the optical deflection element 2 is the laser diode chips 1 in the
  • the laser diode chips 1 can be fastened to the heat-conducting element 3 by means of a solder material.
  • the heat-conducting element 3 in turn is fastened to the mounting surface 11 on its side facing away from the associated laser diode chip 1, in each case by means of a solder material.
  • the housing 10 has side walls 12, which are the cavity 19, in which the components of the laser diode device
  • the housing 10 is formed in one piece and has, in addition to the mounting surface 11 and the side walls 12, a fastening device 16, which is presently designed as a projection on two sides of the housing.
  • Fastening device 16 may have openings 18, by means of which the housing 10 is arranged and fastened, for example, by screws or rivets to an unillustrated heat sink on the underside of the housing 10 facing away from the mounting surface 11.
  • the housing wall 12 has in the present embodiment, a plurality of openings 13. Through each opening 13, a connection element 14 is guided from outside the housing into the housing cavity.
  • the connection elements 14 are
  • connection elements are each electrically isolated from the housing 10.
  • Each connection element 14 is electrically conductively connected in the housing cavity 19 by means of a connecting wire 15 with an associated laser diode chip 1. Via the connection elements 14, the laser diode chips 1 in the housing cavity 19 can be controlled individually.
  • the cover member 20 includes a skirt 21 made of a metallic material.
  • the enclosure 21 surrounds a window element 22.
  • the enclosure 21 is for the laser diode chips 1 in the
  • the window element 22 is presently formed, for example, with glass.
  • the enclosure 21 is connected to a support surface 17, which bounds the side walls 12 at the top of the housing, in a connecting region 23 with the side walls 12 of the housing.
  • the compound can, for example, a metallic solder, a glass solder, or a
  • Cover element 20 is optionally a scattering element 32
  • Laser diode chips 1 is provided in operation generated electromagnetic radiation. In this way, it is possible that the electromagnetic radiation is distributed homogeneously over the surface of the window member 22 at the exit from the cover 20 and exits uniformly from the housing 10. The cover 20 closes the housing tightly.
  • the housing may be hermetically sealed, so that the laser diode chips 1 are protected against atmospheric gases and moisture.
  • the housing 10 may be a type of butterfly housing, in which, unlike conventional housings of this type, the cover 20 is at the top of the housing
  • Housing is radiation permeable.
  • the heat conducting element 3 a via the heat conducting element 3 a
  • a laser diode device which may have an optical output power of several watts, wherein the optical output power by increasing the Housing and adding further laser diode chips in
  • the schematic sectional view of Figure 2 shows an embodiment in which laser diode chips are arranged in a single row next to each other in the housing.
  • the emitted light is reflected by the single deflecting element, in this case a deflecting mirror, to the covering element 20.
  • Cylindrical lens is arranged.
  • the beam-shaping optical element 4 serves to collimate the radiation.
  • the laser diode chips 1 can be arranged as close to each other as possible, without overlapping the beam lobes of the individual laser diode chips already within the housing.
  • FIGS. 1A and 1B surround the beam-shaping optical elements 4 of FIG.
  • Embodiment of Figure 3 is completed.
  • the beam-shaping optical elements 4 are each arranged between the radiation exit surfaces 1 a and the deflecting element 2.
  • the beam-shaping optical elements 4 can extend parallel to the deflection element 2 on both sides of this. In this way, a particularly space-saving arrangement of the laser diode chips 1 in the housing is possible without overlapping the beam lobes of the individual laser diode chips within the housing.
  • FIG. 5 an exemplary embodiment is shown with reference to a schematic sectional view, in which, unlike the exemplary embodiment of FIGS. 1A and 1B, each of the two rows of laser diode chips 1 is assigned its own optical deflecting element 2.
  • Laser diode chips 1 side facing away from the cover 20 are optical elements, in the present case lenses 31, arranged, which provide for beam shaping outside of the housing. On the scattering element 32 is omitted.
  • Lumineszenzkonversionselement 30 is arranged. Such a luminescence conversion element 30 can also be present, for example, in the exemplary embodiments of FIGS. 1A, 1B, 2, 3 and 4. By means of the luminescence conversion element 30, it is possible, for example, that the
  • Laser diode device for emitting white light
  • the invention is not limited by the description based on the embodiments of these. Rather, it includes The invention relates to any novel feature as well as any combination of features, which in particular includes any combination of features i the claims, even if this feature or this combination itself is not explicitly in the

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un dispositif à diode laser, comprenant : - un boîtier (10) comportant une surface de montage (11) dans une cavité (19) du boîtier (10) ; - au moins une puce de diode laser (1), qui émet en fonctionnement un rayonnement électromagnétique par l'intermédiaire d'une surface de sortie de rayonnement (1a) ; - au moins un élément de recouvrement (20), qui laisse passer, au moins par endroits, le rayonnement électromagnétique produit en fonctionnement par la puce à diode laser (1) ; - un élément de déviation (2), qui dirige au moins une partie du rayonnement électromagnétique produit lors du fonctionnement par la puce à diode laser (1) en direction de l'élément de recouvrement (20). La surface de sortie de rayonnement (1a) de la puce à diode laser (1) s'étend transversalement ou perpendiculairement à la surface de montage (11) et/ou à l'élément de recouvrement (20) ; l'élément de recouvrement (20) est relié au boîtier (10) et ferme hermétiquement le boîtier (10).
PCT/EP2013/057810 2012-04-16 2013-04-15 Dispositif à diode laser WO2013156444A1 (fr)

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DE102012103257.2 2012-04-16
DE102012103257A DE102012103257A1 (de) 2012-04-16 2012-04-16 Laserdiodenvorrichtung

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WO2016066689A1 (fr) * 2014-10-28 2016-05-06 Osram Opto Semiconductors Gmbh Fabrication d'un module d'éclairage pour un dispositif de rétroéclairage
JP2017117880A (ja) * 2015-12-22 2017-06-29 京セラ株式会社 光素子搭載用パッケージ、光素子搭載用母基板および電子装置
JP2017201684A (ja) * 2016-04-28 2017-11-09 日亜化学工業株式会社 発光装置の製造方法
JP2018029209A (ja) * 2015-05-20 2018-02-22 日亜化学工業株式会社 発光装置
CN112673312A (zh) * 2018-07-08 2021-04-16 光程研创股份有限公司 发光装置
DE102022123051A1 (de) 2022-09-09 2024-03-14 Schott Ag Beleuchtungseinrichtung und Lichtkonversionseinheit

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DE102018101198A1 (de) * 2018-01-19 2019-07-25 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines gehäusedeckels für ein laserbauelement und gehäusedeckel für ein laserbauelement sowie laserbauelement
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JP2017201684A (ja) * 2016-04-28 2017-11-09 日亜化学工業株式会社 発光装置の製造方法
CN112673312A (zh) * 2018-07-08 2021-04-16 光程研创股份有限公司 发光装置
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