WO2013143397A1 - 新型ito过桥一体式电容触摸屏及其制备方法 - Google Patents

新型ito过桥一体式电容触摸屏及其制备方法 Download PDF

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Publication number
WO2013143397A1
WO2013143397A1 PCT/CN2013/072592 CN2013072592W WO2013143397A1 WO 2013143397 A1 WO2013143397 A1 WO 2013143397A1 CN 2013072592 W CN2013072592 W CN 2013072592W WO 2013143397 A1 WO2013143397 A1 WO 2013143397A1
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Prior art keywords
electrode
thickness
layer
angstroms
transparent substrate
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PCT/CN2013/072592
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English (en)
French (fr)
Inventor
曹晓星
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深圳市宝明科技股份有限公司
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Application filed by 深圳市宝明科技股份有限公司 filed Critical 深圳市宝明科技股份有限公司
Priority to EP13768066.6A priority Critical patent/EP2818993A4/en
Priority to US14/388,085 priority patent/US20150041303A1/en
Publication of WO2013143397A1 publication Critical patent/WO2013143397A1/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/96—Touch switches
    • H03K17/962—Capacitive touch switches
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/96—Touch switches
    • H03K2017/9602—Touch switches characterised by the type or shape of the sensing electrodes
    • H03K2017/9604—Touch switches characterised by the type or shape of the sensing electrodes characterised by the number of electrodes
    • H03K2017/9613—Touch switches characterised by the type or shape of the sensing electrodes characterised by the number of electrodes using two electrodes per touch switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/94—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated
    • H03K2217/96—Touch switches
    • H03K2217/9607—Capacitive touch switches
    • H03K2217/960735—Capacitive touch switches characterised by circuit details
    • H03K2217/96075—Capacitive touch switches characterised by circuit details involving bridge circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/94—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated
    • H03K2217/96—Touch switches
    • H03K2217/9607—Capacitive touch switches
    • H03K2217/960755—Constructional details of capacitive touch and proximity switches

Definitions

  • the present invention relates to the field of capacitive touch screen technology, and more particularly to an integrated capacitive touch screen designed by a ⁇ 0 bridge and a method of fabricating the same. Background technique
  • touch screens With the development of electronic technology, keyboards or mice for mobile phones, digital cameras, handheld game consoles, car DVDs, MP3s, instrumentation, etc. are gradually being replaced by touch screens.
  • the products of touch screens were not very hot a few years ago, and with the increasing contact with touch screen products, they have been recognized by more people in the past two years, and the speed of development has gradually accelerated.
  • the rapid growth of the touch screen has not only stimulated more intense industry competition, but also indirectly promoted the development of technology. Its multi-touch operation method has increased the influence of touch screen products to a new height, and has gradually been adopted by people. Concerned.
  • the touch screen is mainly composed of a touch detecting component and a touch screen controller.
  • the touch detecting component is installed in front of the display screen for detecting the touch position of the user, and is sent to the touch screen controller after receiving; and the main function of the touch screen controller is to receive from the touch point detecting device. Touch the information, convert it to the contact coordinates, and send it to the CPU. It can also receive commands from the CPU and execute them.
  • the touch screen can be divided into four types: resistive type, capacitive sensing type, infrared type and surface acoustic wave type.
  • resistive type capacitive sensing type
  • infrared type infrared type
  • surface acoustic wave type Currently, a resistive touch screen is widely used, which uses pressure sensing. Resistively controlled; Resistive touch screen is a multi-layer composite film, the main part of which is a resistive film screen that closely matches the surface of the display.
  • the resistive film screen is a layer of glass or hard plastic plate as a base layer coated with a transparent oxidized metal (transparent conductive resistor) ITO (Indium Tin Oxide) conductive layer, which is covered with an outer surface hardened smooth anti-scratch
  • ITO Indium Tin Oxide
  • the plastic layer whose inner surface is also coated with an ITO coating, has a number of small (less than 1/1000 inch) transparent isolation points between them to insulate the two conductive layers, when the finger touches the screen, two
  • the layer conductive layer has contact at the touch point position, the resistance changes, and a signal is generated in both X and Y directions, and then sent to the touch screen controller, and the controller detects the contact and calculates (X, Y) Position, then operate according to the way the mouse is simulated.
  • the basic principle of the capacitive touch screen is to use the current sensing of the human body.
  • the capacitive touch screen is a two-layer composite glass screen.
  • the inner surface of the glass screen is coated with a bismuth (indium tin oxide) conductive film (coated conductive glass).
  • the outer layer is a thin layer of bauxite glass protective layer, the ⁇ coating is used as the working surface, and four electrodes are led out at the four corners.
  • the capacitor is a direct conductor, so the finger sucks a small current from the contact point, which flows out from the electrodes on the four corners of the touch screen, and the current flowing through the four electrodes and the fingers to the four corners In proportion to the distance, the controller calculates the position of the touch point by accurately calculating the ratio of the four currents.
  • the projected capacitive touch screen is a widely used one, which has the characteristics of simple structure and high light transmittance.
  • a touch sensing component of a projected capacitive touch screen typically has a plurality of row and column electrodes staggered to form an inductive matrix.
  • the commonly used design method includes disposing the row electrode and the column electrode on both sides of the same transparent substrate to prevent short circuit at the staggered position; or disposing the row electrode and the column electrode on the same side of the same transparent substrate to form the same conductive film ( Generally, it is an ITO conductive film), and the row electrode and the column electrode are separated by providing an insulating layer at a position where the row electrode and the column electrode are staggered, and the row electrode and the column electrode are separated to ensure conduction in respective directions, which is effective. Prevent it from shorting in the staggered position.
  • a commonly adopted design is: one of the row electrodes or the column electrodes is continuously disposed on the conductive film, and the other electrode is disposed on the conductive film at intervals of electrodes arranged in a plurality of electrode blocks, and the conductive bridge is disposed at the position of the staggered point.
  • the adjacent electrode blocks are electrically connected to form a continuous electrode in the other direction; the conductive bridge is separated from the continuously disposed electrodes by an insulating layer, thereby effectively preventing the row electrode and the column electrode from being short-circuited at the staggered point.
  • the commonly adopted design scheme is as follows: (1) The laminated structure is a transparent substrate, a first direction electrode, an insulating layer, and a conductive bridge; or (2) the laminated structure is a transparent substrate, a conductive bridge, an insulating layer, and a first direction electrode.
  • the capacitive touch screen adopting the traditional design scheme may have the defects of low light transmittance and poor working stability.
  • the transmittance of the capacitive touch screen of the conventional design scheme is difficult to break through 80%, and the whole force is bent and deformed easily. Separation occurs at the interface, causing the electrode to open the touch to fail and the touch sensing component to be damaged.
  • One of the objects of the present invention is to provide a novel ⁇ bridge-integrated capacitive touch screen, which can effectively improve the transmittance of the capacitive touch screen by rationally designing the laminated structure of the capacitive touch screen and the bridging conduction mode.
  • the visibility of the ITO pattern further enhances the reliability of the touch screen.
  • the present invention adopts the following technical solutions:
  • a novel ⁇ bridge integrated capacitive touch screen comprising a transparent substrate, a silicon dioxide layer laminated on a transparent substrate, a tantalum pentoxide layer, a black resin layer, an ITO bridge electrode, a first insulating layer, an ITO electrode, a metal The electrode and the second insulating layer;
  • the ITO electrode comprises a capacitive screen driving (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure;
  • the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, and mutually Insulating, vertical design;
  • the transparent substrate comprises a window area and a non-window area, the black resin layer is distributed in the non-window area of the display screen;
  • the thickness of the silicon dioxide layer is 100 ⁇ 1000 angstroms, the bismuth pentoxide
  • the layer has a thickness of 50 to 500 angstroms.
  • the metal electrode line wiring is only in the black resin region, and the window region has no metal electrode.
  • the novel ITO bridge-integrated capacitive touch screen may also have a laminated structure: a transparent substrate, a black resin layer laminated on the transparent substrate, a silicon dioxide layer, a tantalum pentoxide layer, an ITO bridge electrode, and a first An insulating layer, an ITO electrode, a metal electrode and a second insulating layer;
  • the ITO electrode comprises a capacitive screen driving (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure;
  • the ITO electrode 1 and the ITO electrode 2 On the same level, independent of each other, insulated from each other, vertical design;
  • the transparent substrate comprises a window area and a non-window area, the black resin layer is distributed in the non-window area of the display screen;
  • the thickness of the silicon dioxide layer is 100 ⁇ 1000 angstroms
  • the bismuth pentoxide layer has a thickness of 50 to 500 angstroms.
  • the metal electrode line wiring is only in the black resin region, and the
  • the transparent substrate is a chemically strengthened glass substrate or a resin material substrate having a thickness of between 0.5 and 2.0 mm;
  • the regular structure of the ITO electrode is a diamond shape, a strip shape, a square shape, or a snowflake shape. Or a cross-shaped graphic.
  • the black resin layer can effectively block the layer of the non-visible area, can block light, and block visible objects under the metal wire and the like.
  • the ITO bridge electrode includes a bridge electrode 1 in the display window region and a black resin layer edge bridge electrode 2, both of which have a regular pattern structure; the bridge electrode 1 is connected to a driving line that turns on the ITO electrode (the left and right ends of the ITO electrode 1) Or induction line (not shown in the upper and lower ends of ITO electrode 2);
  • the pole 2 is connected to a driving wire (ITO electrode 1) or an induction wire (ITO electrode 2) that conducts the metal electrode and the ITO electrode, and a driving wire (ITO electrode 1) or an induction wire (ITO electrode 2) that prevents the ITO electrode from being in a black resin layer.
  • the slope is broken.
  • the first insulating layer keeps the ITO electrode 1 and the ITO electrode 2 in an insulated state and does not conduct each other.
  • the flexible circuit board bonding region where the ITO electrode signal is turned on is realized by the metal electrode.
  • the second insulating layer protects the metal electrode from the ITO wire to insulate it from the air.
  • a second object of the present invention is to provide a novel ⁇ bridge-integrated capacitive touch screen manufacturing method, which adopts the following technical solutions:
  • Formation of a silicon dioxide layer through a silicon dioxide coating, a transparent and uniform thickness of the silicon dioxide film layer is formed on the transparent substrate, and has a thickness of 100 to 1000 angstroms;
  • a coating of pentoxide pentoxide is formed on the silicon dioxide layer to form a transparent and uniform thickness of pentoxide layer having a thickness of 50 to 500 angstroms;
  • the black resin is uniformly coated on a transparent substrate by a spin coating method or a doctor coating method, and the coating thickness is 0.3 ⁇ m to 5 ⁇ m, and is pre-baked, exposed, and developed by a heater to form a black resin.
  • the desired black resin area; the black resin area has a trapezoidal structure with an intermediate thickness of
  • the black resin area is a non-window area of the display screen, and the purpose is to block the metal electrode;
  • the formation of the bridge electrode The transparent substrate on which the black resin layer is formed is subjected to a ruthenium plating film to form a transparent and uniform thickness ruthenium layer on the glass substrate, and has a thickness of 50 angstroms to 2000 angstroms (face).
  • the resistance is 10 ⁇ 430 ohms);
  • a uniform thickness of the positive photoresist material is applied on the surface of the ruthenium, and the thickness of the photoresist coating is 1 ⁇ to 5 ⁇ ;
  • the ⁇ crossing electrode includes a bridge electrode of the display screen view area and a black resin layer edge lap electrode, and has a regular pattern structure, and the two layers are independent of each other and insulated from each other.
  • a thin layer of negative photoresist material is coated on the surface of the ruthenium film, and the thickness of the photoresist coating is 0.5 ⁇ 3 ⁇ ;
  • a thickness of 0.5 ⁇ 3 ⁇ and a regular insulating layer pattern (such as a rectangle, a square, a diamond, an ellipse, etc.) are formed.
  • the transparent substrate forming the first insulating layer is again subjected to a ruthenium plating film to form a transparent and uniform thickness ruthenium film layer on the glass substrate, and the thickness thereof is 50 angstroms to 2000 angstroms (the surface resistance is 10 to 430 ohms). ;
  • a uniform thickness of the positive photoresist material is applied on the surface of the ruthenium, and the thickness of the photoresist coating is 1 ⁇ to 5 ⁇ ;
  • the final thickness is 50-2000 angstroms (face resistance is 10 ⁇ 430 ohms) and regular ⁇ pattern or electrode;
  • the ⁇ electrode includes a capacitive screen drive ( ⁇ electrode 1) and a sensing electrode ( ⁇ electrode 2) having a regular pattern structure; the ⁇ electrode 1 and the ⁇ electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.
  • the turn-on electrode 1 is turned on and left over by the bridge electrode 1, so that the germanium electrode 1 forms a driving path; the conduction of the germanium electrode 2 is self-carrying through the bottom to the top of the first insulating layer, and then from the first insulation. The top to bottom of the layer drops, causing the erbium electrode 2 to form an inductive path.
  • the transparent substrate forming the ⁇ electrode layer is subjected to metal plating to form a metal film layer having a uniform thickness on the transparent substrate, and has a thickness of 500 angstroms to 4,000 angstroms.
  • the transparent substrate coated with metal is coated with a uniform thickness of positive photoresist material on the metal surface, and the thickness of the photoresist coating is 1 ⁇ 5 ⁇ ;
  • the photoresist is pre-baked, exposed, developed, etched, and the photoresist is removed to form a regular metal pattern or electrode with a thickness of 500 to 4000 angstroms. Formation of the second insulating layer:
  • the transparent substrate after the metal electrode is coated with a uniform thickness of the negative photoresist material on the surface of the metal film, and the thickness of the photoresist coating is 0.5 ⁇ m ⁇ 3 ⁇ m ⁇ ;
  • the photoresist is pre-baked, exposed, developed, and finally formed into a thickness of 0.5 ⁇ 3 ⁇ and a regular insulating layer pattern.
  • the transparent substrate is a chemically strengthened glass substrate having a thickness of between 0.5 mm and 2.0 mm in thickness; the ITO is composed of In203 and Sn02, and the mass ratio thereof is 85 to 95: 5 to 15.
  • the ITO coating method can be vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, or sol gel.
  • the main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and positive photosensitive agent (trade name is TR400 produced by Taiwan New Materials Co., Ltd.); the main component of negative photoresist material is acetic acid Propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent (trade name: Taiwan Daxing Co., Ltd. POC A46) Coating photoresist materials are roller coating, spin coating, scraping and other methods.
  • the metallized metal film layer is a sandwich structure of MoNb, AlNd, MoNb, and the thickness is 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms, of which MoNb alloy
  • the mass ratio of Mo and Nb in the material is 85 ⁇ 95: 5-15.
  • the mass ratio of A1 and Nd in AlNd alloy material is 95 ⁇ 98: 2-5
  • the selection of metal materials can also be composed of silver alloy or copper alloy. Combined.
  • the metal film coating is vacuum magnetron sputtering.
  • Formation of a black resin layer The black resin is uniformly coated on a transparent substrate by a spin coating method or a doctor coating method, and the coating thickness is 0.3 ⁇ m to 5 ⁇ m, and is pre-baked, exposed, and developed by a heater to form a black resin.
  • the desired black resin area The desired black resin area;
  • a silica film is formed on the black resin layer to form a transparent and uniform thickness silicon dioxide layer having a thickness of 100 to 1000 angstroms;
  • a coating of pentoxide pentoxide is formed on the silicon dioxide layer to form a transparent and uniform thickness of pentoxide layer having a thickness of 50 to 500 angstroms;
  • the black resin is a photosensitive protective layer photoresist (product is produced by Taiwan Yongguang Chemical Institute)
  • EK410 is a black negative photoresist material
  • ITO bridge electrode A transparent substrate forming a black resin layer is subjected to ITO plating to form a transparent and uniform thickness ITO film layer on the glass substrate, and has a thickness of 50 angstroms to 2000 angstroms (face). The resistance is 10 ⁇ 430 ohms);
  • a transparent substrate coated with ITO is coated with a uniform thickness of a positive photoresist material on the surface of the ITO, and the thickness of the photoresist coating is 1 ⁇ 5 ⁇ ;
  • the photoresist is pre-baked, exposed, developed, etched, and the photoresist is removed to form a thickness of 50 to 2000 angstroms (face resistance of 10 to 430 ohms) and a regular ruthenium pattern or electrode.
  • the bypass bridge electrode comprises a bridge electrode of the viewing area of the display screen and an edge overlapping electrode of the black resin layer, and has a regular pattern structure, and the two layers are independent of each other and insulated from each other.
  • a thin layer of negative photoresist material is coated on the surface of the ruthenium film, and the thickness of the photoresist coating is 0.5 ⁇ 3 ⁇ ;
  • a thickness of 0.5 ⁇ 3 ⁇ and a regular insulating layer pattern (such as a rectangle, a square, a diamond, an ellipse, etc.) are formed.
  • the transparent substrate forming the first insulating layer is again subjected to a ruthenium plating film to form a transparent and uniform thickness ruthenium film layer on the glass substrate, and the thickness thereof is 50 angstroms to 2000 angstroms (the surface resistance is 10 to 430 ohms). ;
  • a uniform thickness of the positive photoresist material is applied on the surface of the ruthenium, and the thickness of the photoresist coating is 1 ⁇ to 5 ⁇ ;
  • the final thickness is 50-2000 angstroms (face resistance is 10 ⁇ 430 ohms) and regular ⁇ pattern or electrode;
  • the ⁇ electrode includes a capacitive screen drive ( ⁇ electrode 1) and a sensing electrode ( ⁇ electrode 2) having a regular pattern structure; the ⁇ electrode 1 and the ⁇ electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.
  • the turn-on electrode 1 is turned on by the left and right bridge electrodes 1 to make the germanium electrode 1 form a driving path; the turn-on electrode 2 is turned on by itself from the bottom to the top of the first insulating layer, and then The falling from the top to the bottom of the first insulating layer causes the IT0 electrode 2 to form an inductive path.
  • the transparent substrate on which the ITO electrode layer is formed is subjected to metal plating to form a metal film layer having a uniform thickness on the transparent substrate, and has a thickness of 500 angstroms to 4,000 angstroms.
  • the transparent substrate coated with metal is coated with a uniform thickness of positive photoresist material on the metal surface, and the thickness of the photoresist coating is 1 ⁇ 5 ⁇ ;
  • the photoresist is pre-baked, exposed, developed, etched, and the photoresist is removed to form a regular metal pattern or electrode with a thickness of 500 to 4000 angstroms.
  • the transparent substrate after the metal electrode is coated with a uniform thickness of the negative photoresist material on the surface of the metal film, and the thickness of the photoresist coating is 0.5 ⁇ m ⁇ 3 ⁇ m ⁇ ;
  • the photoresist is pre-baked, exposed, developed, and finally formed into a thickness of 0.5 ⁇ 3 ⁇ and a regular insulating layer pattern.
  • the present invention has the following advantages and beneficial effects:
  • the invention realizes the reasonable arrangement of the laminated structure, completes the touch function signal electrode and the black resin covering layer on a transparent substrate, optimizes the order of stacking and crossing the bridge electrode layer and the like, and greatly improves the yield of the product. Reduce costs and increase product reliability.
  • the thickness of the substrate is between 0.5mm and 2.0mm, and has the advantages of thin thickness and light weight.
  • the invention adopts the design structure of the ITO bridge, so that the touch screen does not see the metal bridge point in the window area of the display area, which greatly improves the product transmittance.
  • FIG. 1 is a schematic structural view of an ITO bridge capacitive touch screen according to the present invention.
  • FIG. 2 is a schematic structural view of a glass substrate according to an embodiment of the present invention.
  • Figure 3 is a partial enlarged schematic view of the ITO bridge
  • Figure 6 is a graph showing the results of a comparison test of the transmittance of the product of the embodiment.
  • Fig. 7 is a graph showing the result of comparison of pattern visibility of the embodiment. detailed description
  • the ITO bridge capacitive touch screen includes a chemically strengthened glass substrate or a resin material substrate 11 having a thickness of between 0.5 mm and 2.0 mm, and is sequentially laminated on the silicon dioxide layer 12 of the glass substrate.
  • the ITO bridge electrode 15 includes a display screen
  • the cross-bridge electrode of the viewing zone and the edge of the black resin layer overlap the electrode, and have a regular pattern structure, which may be a diamond shape, a strip shape, a square shape, a snowflake type, or a cross type.
  • the glass substrate includes a window area 21 and a non-window area 22, and the black resin layer 12 is distributed in the display non-view window area 22.
  • the black resin layer can effectively block the layer of the non-visible area, can block the light, and block visible objects under the metal wire and the like.
  • the ITO bridge electrode 45 includes the bridge electrode 1 and the black resin layer 51 edge of the display window region.
  • the bridge electrode 2, which has a regular pattern structure, may be a diamond shape, or a strip shape, or a square shape, or a snowflake type, or a cross type;
  • the bridge electrode 1 is connected to a driving line that turns on the ITO electrode 17 (ITO electrode 1)
  • the bridge electrode 2 is connected to the driving line (ITO electrode 1) 44 or the sensing line (the ITO electrode 2) that conducts the metal electrode 48 and the ITO electrode.
  • the first insulating layer 46 insulates the driving line (ITO electrode 1) 44 of the ITO electrode from the sensing line (ITO electrode 2) 47, and does not conduct each other.
  • the flexible circuit board with the ITO electrode signal conducting is realized by a metal electrode.
  • the second insulating layer 49 protects the metal electrode 48 from the ITO wire to insulate it from the air.
  • the preparation process is as follows: Formation of a silicon dioxide layer: After the silicon dioxide coating, a transparent and uniform thickness of the silicon dioxide film layer is formed on the glass substrate, and the thickness thereof is selected from 0, 50, 100, 300, 400, 700, 1000 and 1500 angstroms;
  • Formation of a bismuth pentoxide layer After a coating of ruthenium pentoxide, a transparent and uniform thickness of ruthenium pentoxide film is formed on the silica coating layer, and the thickness thereof is selected from 0, 20, 50, 150, respectively. 200, 400, 500 and 1000 angstroms;
  • the black resin is uniformly coated on the transparent substrate 41 ( 11 ) by a spin coating method or a doctor coating method, and the coating thickness is 0.3 ⁇ m to 5 ⁇ m, and is pre-baked, exposed, and developed by a heater to form a desired
  • the black resin region; the black resin region has a trapezoidal structure with an intermediate thickness of 0.3 ⁇ m to 5 ⁇ m, and the edge bevel angle is between 6 and 60 degrees, and the angle is gentle, and the purpose is a tantalum electrode (drive line electrode 1 and induction line electrode) 2) When the slope is passed, the ⁇ electrode is not broken due to the large difference in thickness.
  • the black resin area is a non-window area of the display screen, and the purpose is to block the metal electrode;
  • the pre-bake temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 to 100 mj, the developer is Na or Ka alkaline solution, and the development temperature is operated at a constant temperature of 20 to 40 degrees.
  • the conditions are from 200 to 300 degrees, and the time is from half an hour to three hours.
  • a black resin layer 51 (12) having a thickness of 0.3 ⁇ m to 5 ⁇ m is finally formed.
  • the formation of the bridge electrode chemically strengthen the transparent glass substrate, and then pass through the ruthenium coating to form a transparent and uniform thickness ruthenium layer on the glass substrate, the thickness of which is 50 angstroms to 2000 angstroms (face resistance) It is composed of ⁇ 203 and Sn02, and its mass ratio is 85 ⁇ 95: 5 ⁇ 15.
  • ITO coating methods include vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, and sol gel.
  • the ITO coated transparent glass substrate is coated with a uniform thickness of positive photoresist material on the surface of the ITO.
  • the photoresist coating thickness is 1 ⁇ 5 ⁇ ; the main component of the positive photoresist material is propylene glycol monomethyl ether acetate. , epoxy resin and photosensitive materials.
  • the photoresist coating thickness is from 1 ⁇ m to 5 ⁇ m. There are ways to apply photoresist Rolling, spin coating, scraping, etc.
  • the product is pre-baked, exposed, developed, etched, and stripped to a thickness of 50 to 2000 angstroms (face resistance of 10 to 430 ohms) and a regular ITO pattern or electrode.
  • the pre-bake temperature and time range is from 60 degrees to 150 degrees, from 50 seconds to 200 seconds, and the exposure energy is from lOOmj to 500mj.
  • the developer is made of Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees.
  • the ITO etching solution is a mixture of hydrochloric acid and nitric acid in a certain ratio, so that the pH of the acid falls between 1 and 3, and the etching temperature is between 40 and 50 degrees.
  • the photo-resist film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the release temperature is between 40 and 80 degrees.
  • the transparent glass substrate after passing through the ITO bridge electrode is coated with a uniform thickness of the negative photoresist material on the surface of the ITO film.
  • the main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy. Resin and negative photosensitive agent, photoresist coating thickness is 0.5 ⁇ 3 ⁇ ; coating negative photoresist material by spin coating, scraping coating, etc.
  • the product is pre-baked, exposed, developed, and finally formed into a thickness of 0.5 ⁇ 3 ⁇ and a regular insulating layer pattern.
  • the pre-bake temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 to 100 mj, the developer is Na or Ka alkaline solution, and the development temperature is 20 to 40 degrees.
  • the condition is 200 to 300 degrees, and the time is from half an hour to 3 hours.
  • an insulating layer 1 having a thickness of 0.5 ⁇ m to 3 ⁇ m is formed.
  • the transparent glass substrate forming the first insulating layer is again subjected to a ruthenium plating film to form a transparent and uniform thickness ruthenium layer on the glass substrate, and has a thickness of 50 angstroms to 2000 angstroms (the surface resistance is 10-430 ohms).
  • the bismuth material consists of ⁇ 203 and Sn02 with a mass ratio of 85-95: 5 ⁇ 15. ITO coating methods include vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, and sol gel.
  • the ITO coated glass substrate is coated with a uniform thickness of positive photoresist material on the surface of the ITO.
  • the main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and photosensitive material;
  • the cloth thickness is 1 ⁇ to 5 ⁇ .
  • Coating photoresist materials are by roller coating, spin coating, and scraping. After the above process, the product is pre-baked, exposed, developed, etched, and stripped with a photoresist to form a thickness of 50 to 2000 angstroms (face resistance of 10 to 430 ohms) and a regular ITO pattern or electrode.
  • the pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 m to 500 mj, the developing solution is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees.
  • the ITO etching solution is a mixture of hydrochloric acid and nitric acid in a certain ratio, so that the pH of the acid falls between 1 and 3, and the etching temperature is between 40 and 50 degrees.
  • the light-removing film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees.
  • the ITO electrode comprises a capacitive screen drive (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.
  • the glass substrate on which the ITO electrode layer is formed is subjected to metal plating to form a metal film layer having a uniform thickness on the glass substrate, and has a thickness of 500 angstroms to 4000 angstroms.
  • the metal film material is a sandwich structure composed of MoNb, AlNd, MoNb, and the thickness is in the range of 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms, wherein MoNb alloy materials are used.
  • the mass ratio of Mo to Nb is 85-95: 5-15, and the mass ratio of A1 and Nd in AlNd alloy material is 95 ⁇ 98: 2 ⁇ 5.
  • the selection of the metal material can also be composed of a silver alloy or a copper alloy, and the components are combined in a certain ratio.
  • the metal coating is a vacuum-magnetized metal-coated glass substrate, and a uniform thickness of a positive photoresist material is applied to the metal surface.
  • the main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and Photosensitive material; photoresist coating thickness is 1 ⁇ 5 ⁇ . Coating photoresist materials are by roller coating, spin coating, and scraping. After the above process, the product is pre-baked, exposed, developed, etched, and stripped to a thickness of 500-4000 angstroms and a regular metal pattern or electrode.
  • the pre-bake temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 m to 500 mj, the developer is Na or Ka-based alkaline solution, and the development temperature is operated at a constant temperature of 20 to 40 degrees.
  • the metal etching solution is a mixture of phosphoric acid, acetic acid and nitric acid in a certain ratio, and the etching temperature is between 40 and 50 degrees.
  • the photoresist film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, the film removal temperature Work between 40 and 80 degrees.
  • the metal electrode line wiring is only in the black resin region, and the window region has no metal electrode.
  • the glass substrate after the metal electrode is coated with a uniform thickness of the negative photoresist material on the surface of the metal film.
  • the main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy resin and negative Sexy light agent (trade name is Taiwan Daxing company produces POC A46); photoresist coating thickness is 0.5 ⁇ 3 ⁇ coating negative photoresist material by spin coating, scraping and other methods.
  • the product is pre-baked, exposed, developed, and finally formed into a thickness of 0.5 ⁇ 3 ⁇ and a regular insulating layer pattern.
  • the pre-bake temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 to 100 mj, the developer is Na or Ka alkaline solution, and the development temperature is 20 to 40 degrees.
  • the condition is 200 to 300 degrees, and the time is 0.5 hours to 3 hours.
  • a second insulating layer having a thickness of 0.5 ⁇ m to 3 ⁇ m is formed.
  • the invention uses a silica material and a tantalum pentoxide material, and the thickness thereof is reasonably matched (the experimental results are shown in FIG. 6 and FIG. 7).
  • the suitable thickness of the touch screen is screened to make the transmittance and pattern of the product available.
  • the visibility has been significantly improved.
  • the thickness of the silicon dioxide film layer is selected between 100 and 1000 angstroms
  • the thickness of the ruthenium pentoxide film layer is selected to be between 50 and 500 angstroms, which has an excellent effect, and the product transmittance can be stabilized at 93%.
  • the level of pattern visibility can be stabilized within level 2 (the pattern visibility rating is defined as: 0 level is completely invisible, level 10 is very visible, and the pattern is successively visible and obvious).
  • the silica material has anti-reflection and light-reducing functions. Since the phase and amplitude changes are different after the light of different polarization states is reflected at the interface between the film layer and the air and the film layer and the substrate, the silicon dioxide layer will change the polarization state after being reflected by the film layer, which will reduce the product reflectivity. Reduce pattern visibility. As the silica film layer increases, the interference effect of the film layer will produce a certain anti-reflection effect. Ordinary glass has a reflectance of about 5%, and glass coated with a silica material has a reflectance of about 2%. The human eye has a certain perspective The ordinary glass of the pattern can clearly see the ⁇ pattern on the glass. A silicon dioxide-coated glass having an ITO pattern is seen from a certain angle of the human eye, and the ITO pattern on the glass is not noticeable.
  • Formation of a black resin layer The black resin is uniformly coated on a transparent substrate by a spin coating method or a doctor coating method, and the coating thickness is 0.3 ⁇ m to 5 ⁇ m, and is pre-baked, exposed, and developed by a heater to form a black resin.
  • the desired black resin area The desired black resin area;
  • a silica film is formed on the black resin layer to form a transparent and uniform thickness silicon dioxide layer having a thickness of 100 to 1000 angstroms;
  • a coating of pentoxide pentoxide is formed on the silicon dioxide layer to form a transparent and uniform thickness of pentoxide layer having a thickness of 50 to 500 angstroms;

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Abstract

本发明公开了一种新型ITO过桥一体式电容触摸屏及其制造方法，所述新型ITO过桥一体式电容触摸屏包括透明基板，依次层叠于透明基板的二氧化硅层、五氧化二铌层、黑色树脂层、ITO过桥电极、第一绝缘层、ITO电极、金属电极和第二绝缘层；所述的二氧化硅层为整面覆盖玻璃，五氧化二铌层为整面覆盖住二氧化硅层；所述的ITO电极包括电容屏驱动和感应电极，具有规则图形结构；电容屏驱动与感应电极在同一层面，相互独立，相互绝缘，垂直设计。本发明通过对电容触摸屏的层叠结构以及架桥导通方式进行合理的设计，有效的提高电容式触摸屏的透过率，降低了ITO图案的可视性，触摸屏的可靠性进一步提升。

Description

新型 ιτο过桥一体式电容触摸屏及其制备方法
技术领域
本发明涉及电容触摸屏技术领域， 尤其是涉及一种通过 ΙΤ0过桥设计的一 体式电容触摸屏及其制造方法。 背景技术
随着电子科技的发展， 目前手机、 数码相机、 掌上游戏机、 车载 DVD、 MP3、 仪表仪器等的键盘或鼠标逐渐被触摸屏替代。 触摸屏的产品在几年前并 不是十分火热， 而随着人们对于触屏产品的接触越来越多， 近两年也被更多人 所认可， 发展速度逐渐加快。 触摸屏迅速的成长， 不仅激起了更加激烈的行业 竞争， 也间接推动了技术的发展， 其多点触控的操作方式更是把触摸屏产品的 影响力提升到了一个新的高度， 也逐渐被人们所关注起来。
触摸屏主要由触摸检测部件和触摸屏控制器组成， 触摸检测部件安装在显 示器屏幕前面， 用于检测用户触摸位置， 接收后送触摸屏控制器； 而触摸屏控 制器的主要作用是从触摸点检测装置上接收触摸信息， 并将它转换成触点坐标， 再送给 CPU, 它同时能接收 CPU发来的命令并加以执行。
按照触摸屏的工作原理和传输信息的介质， 触摸屏可分为四种， 分别为电 阻式、 电容感应式、 红外线式以及表面声波式， 当前被广泛使用的是电阻式触 摸屏， 它是利用压力感应进行电阻控制的； 电阻式触摸屏是一种多层的复合薄 膜， 它的主要部分是一块与显示器表面非常配合的电阻薄膜屏。 电阻薄膜屏是 以一层玻璃或硬塑料平板作为基层， 表面涂有一层透明氧化金属 （透明的导电 电阻） ITO (氧化铟锡） 导电层， 上面再盖有一层外表面硬化处理光滑防擦的塑 料层，它的内表面也涂有一层 ITO涂层，在它们之间有许多细小的（小于 1/1000 英寸） 的透明隔离点把两层导电层隔开绝缘， 当手指触摸屏幕时， 两层导电层 在触摸点位置就有了接触， 电阻发生变化， 在 X和 Y两个方向上产生信号， 然 后送触摸屏控制器， 控制器侦测到这一接触并计算出 （X, Y) 的位置， 再根据 模拟鼠标的方式运作。 电容式触摸屏的基本原理是利用人体的电流感应进行工作的， 电容式触摸 屏是一块二层复合玻璃屏，玻璃屏的内表面夹层涂有 ΠΌ (氧化铟锡 )导电膜（镀 膜导电玻璃） ， 最外层是一薄层矽土玻璃保护层， ιτο涂层作为工作面， 四个角 上引出四个电极， 当手指触摸在屏幕上时， 由于人体电场， 用户和触摸屏表面 形成一个耦合电容， 对于高频电流来说， 电容是直接导体， 于是手指从接触点 吸走一个很小的电流， 这个电流分别从触摸屏的四角上的电极中流出， 并且流 经这四个电极的电流与手指到四角的距离成正比， 控制器通过对这四个电流比 例的精确计算， 得出触摸点的位置。
在电容式触摸屏中， 投射式电容触摸屏是当前应用较为广泛的一种， 具有 结构简单， 透光率高等特点。 投射式电容触摸屏的触摸感应部件一般为多个行 电极和列电极交错形成感应矩阵。 通常采用的设计方式包括将行电极和列电极 分别设置在同一透明基板的两面， 防止在交错位置出现短路； 或者将行电极和 列电极设置在同一透明基板的同侧， 形成于同一导电膜 （通常为 ITO导电膜） 上， 在行电极和列电极交错的位置通过设置绝缘层并架导电桥的方式隔开， 将 行电极和列电极隔开并保证在各自的方向上导通， 可以有效的防止其在交错位 置短路。
通常采用的设计方案为： 行电极或者列电极之一在导电膜上连续设置， 则 另一个电极在导电膜上以连续设置的电极为间隔设置成若干电极块， 在交错点 的位置通过导电桥将相邻的电极块电连接， 从而形成另一方向上的连续电极； 导电桥与连续设置的电极之间由绝缘层分隔， 从而有效的阻止行电极和列电极 在交错点短路。 通常采用的设计方案为： （1 ) 层叠结构依次为透明基板、 第一 方向电极、 绝缘层、 导电桥； 或者 （2) 层叠结构依次为透明基板、 导电桥、 绝 缘层、 第一方向电极。
但采用传统的设计方案的电容式触摸屏会存在透光率不高以及工作稳定性 差的缺陷， 传统的设计方案的电容式触摸屏透光率很难突破 80%, 且整体受力 弯曲变形时， 容易在界面出现分离， 导致电极断路触摸失效， 触摸感应部件损 坏。 发明内容
本发明的目的之一在于提供一种新型 ιτο过桥一体式电容触摸屏， 通过对 电容触摸屏的层叠结构以及架桥导通方式进行合理的设计， 有效的提高电容式 触摸屏的透过率， 降低了 ITO图案的可视性， 触摸屏的可靠性进一步提升。
为实现上述目的， 本发明采用如下技术方案：
一种新型 ιτο过桥一体式电容触摸屏， 包括透明基板， 依次层叠于透明基 板的二氧化硅层、五氧化二铌层、黑色树脂层、 ITO过桥电极、第一绝缘层、 ITO 电极、 金属电极和第二绝缘层； 所述的 ITO电极包括电容屏驱动 (ITO电极 1)和 感应电极 (ITO电极 2)， 具有规则图形结构； ITO电极 1与 ITO电极 2在同一层 面， 相互独立， 相互绝缘， 垂直设计； 所述透明基板包括视窗区和非视窗区， 黑色树脂层分布在显示屏非视窗区； 所述的二氧化硅层厚度为 100~1000埃米， 所述的五氧化二铌层， 其厚度为 50~500埃米。 所述的金属电极线路布线仅在黑 色树脂区域， 视窗区无金属电极。
所述的新型 ITO过桥一体式电容触摸屏， 其层叠结构也可采用： 包括透明 基板， 依次层叠于透明基板的黑色树脂层、 二氧化硅层、 五氧化二铌层、 ITO 过桥电极、 第一绝缘层、 ITO电极、 金属电极和第二绝缘层； 所述的 ITO电极 包括电容屏驱动 (ITO电极 1)和感应电极 (ITO电极 2)， 具有规则图形结构； ITO 电极 1与 ITO电极 2在同一层面， 相互独立， 相互绝缘， 垂直设计； 所述透明 基板包括视窗区和非视窗区， 黑色树脂层分布在显示屏非视窗区； 所述的二氧 化硅层厚度为 100~1000埃米， 所述的五氧化二铌层， 其厚度为 50~500埃米。 所述的金属电极线路布线仅在黑色树脂区域， 视窗区无金属电极。
优选的是： 所述的透明基板为厚度在厚度 0.5~2.0毫米之间的化学强化玻璃 基板或树脂材料基板； 所述 ITO电极规则结构为菱形， 或条形， 或方块形， 或 雪花型， 或十字型等图形。
所述的黑色树脂层可有效遮挡非可视区的图层， 可以遮光， 以及遮挡金属 线等产品下方的可见物。 ITO过桥电极包括显示屏视窗区的过桥电极 1和黑色树 脂层边缘过桥电极 2，两者具有规则图形结构；过桥电极 1连接导通 ITO电极的 驱动线 (ITO电极 1左右端)或感应线 (ITO 电极 2上下端一图中未显示)； 过桥电 极 2连接导通金属电极与 ITO电极的驱动线 (ITO电极 1)或感应线 (ITO电极 2) 和防止 ITO电极的驱动线 (ITO电极 1)或感应线 (ITO电极 2)在黑色树脂层斜坡处 断裂。 第一绝缘层使 ITO电极 1与 ITO电极 2处于绝缘状况， 互不导通。 ITO 电极信号导通的柔性线路板邦定区域通过金属电极实现。 第二绝缘层保护金属 电极与 ITO导线， 使之与空气绝缘。
本发明的目的之二在于提供一种新型 ιτο过桥一体式电容触摸屏的制造方 法， 采用如下技术方案：
二氧化硅层的形成： 经过二氧化硅镀膜， 使在透明基板上形成一层透明及 厚度均匀的二氧化硅膜层， 其厚度为 100~1000埃米；
五氧化二铌层的形成： 经过五氧化二铌镀膜， 使在二氧化硅层上形成一层 透明及厚度均匀的五氧化二铌膜层， 其厚度为 50~500埃米；
黑色树脂层的形成： 将黑色树脂经过旋转涂布方式或刮式涂布方式均匀涂 布在透明基板上， 涂布厚度为 0.3μιη~5μιη， 经过加热器预烤， 曝光， 显影， 使 之形成所需的黑色树脂区域； 黑色树脂区域呈梯形结构， 中间厚度为
0.3μιη~5μιη, 其边缘斜角为 6~60度之间， 角度平缓， 目的为 ΙΤΟ电极 (驱动线 ΙΤΟ电极 1和感应线 ΙΤΟ电极 2)通过斜坡时不会由于厚度差异大导致 ΙΤΟ电极 断裂。 黑色树脂区域为显示屏非视窗区， 目的为遮挡金属电极； 所述黑色树脂 是感光性保护层光阻剂（商品为台湾永光化学所生产 EK410), 是一种黑色负性 光阻材料， 主要成分为： 亚克力树脂， 环氧树脂， 负性感光剂， 乙酸丙二醇单 甲基醚酯及黑色颜料， 具体比例为树脂类： 乙酸丙二醇单甲基醚酯： 黑色颜料 及负性感光剂 =15~30： 60-80： 1~10。
ΙΤΟ过桥电极的形成： 对形成黑色树脂层的透明基板， 再经过 ΙΤΟ镀膜， 使在玻璃基板上形成一层透明及厚度均匀的 ΙΤΟ膜层， 其厚度为 50埃米 ~2000 埃米 (面电阻为 10~430欧姆)；
经过 ΙΤΟ镀膜的透明基板， 在其 ΙΤΟ表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50~2000 埃米 (面电阻为 10~430欧姆)及规则 ΙΤΟ图案或电极。 所述的 ιτο过桥电极包括显示屏视区的过桥电极和黑色树脂层边缘搭接电 极， 具有规则图形结构， 两者在同一层面， 相互独立， 相互绝缘。
第一绝缘层的形成：
经过 ΙΤΟ过桥电极后的透明基板， 在其 ΙΤΟ膜面涂布一层厚度均匀的负性 光阻材料， 光阻涂布厚度为 0.5μιη~3μιη;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3μιη和规则的绝缘层图 案 （如长方形， 正方形， 菱形， 椭圆形等图案）。
ΙΤΟ电极层的形成：
形成第一绝缘层的透明基板， 再次经过 ΙΤΟ镀膜， 使在玻璃基板上形成一 层透明及厚度均匀的 ΙΤΟ膜层， 其厚度为 50埃米 ~2000埃米 (面电阻为 10~430 欧姆)；
经过 ΙΤΟ镀膜的透明基板， 在其 ΙΤΟ表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50~2000 埃米 (面电阻为 10~430欧姆)及规则 ΙΤΟ图案或电极；
所述的 ΙΤΟ电极包括电容屏驱动 (ΙΤΟ电极 1)和感应电极 (ΙΤΟ电极 2)，具有 规则图形结构； ΙΤΟ电极 1与 ΙΤΟ电极 2在同一层面， 相互独立， 相互绝缘， 垂直设计。
ΙΤΟ电极 1导通是通过 ΙΤΟ过桥电极 1左右搭接， 使 ΙΤΟ电极 1形成驱动 通路； ΙΤΟ电极 2的导通是自身 ΙΤΟ通过第一绝缘层的底部到顶部的爬升， 再 从第一绝缘层的顶部到底部的下降， 使 ΙΤΟ电极 2形成感应通路。
金属电极层的形成：
形成 ΙΤΟ 电极层的透明基板， 经过金属镀膜， 使之在透明基板上形成一层 厚度均匀的金属膜层， 其厚度为 500埃米 ~4000埃米。
经过金属镀膜的透明基板， 在其金属表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 500~4000 埃米及规则金属图案或电极。 第二绝缘层的形成：
经过金属电极后的透明基板， 在其金属膜面涂布一层厚度均匀的负性光阻 材料， 光阻涂布厚度为 0.5μιη~3μιη;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3μιη和规则的绝缘层图 案。
优选的：所述的透明基板为厚度在厚度 0.5mm~2.0mm之间毫米的化学强化 玻璃基板； 所述的 ITO由 In203和 Sn02组成， 其质量比为 85~95： 5~15。 ITO 镀膜的方式可以采用真空磁控溅镀， 化学气相沉积法， 热蒸镀， 溶胶凝胶。
所述的正性光阻材料主成分为乙酸丙二醇单甲基醚酯， 环氧树脂及正性感 光剂 （商品名为台湾新应材公司生产的 TR400); 负性光阻材料主成分为乙酸丙 二醇单甲基醚酯， 亚克力树脂， 环氧树脂及负性感光剂 （商品名为台湾达兴公 司生产 POC A46) 涂布光阻材料方式有滚涂， 旋涂， 刮涂等方式。
金属镀膜的金属膜层为 MoNb, AlNd, MoNb堆积而成的三明治结构， 厚 度按 50埃米 ~500埃米: 500埃米 ~3000埃米: 50埃米 ~500埃米比例搭配， 其中 MoNb合金材料中 Mo和 Nb质量比为 85~95： 5-15, AlNd合金材料中 A1和 Nd 质量比为 95~98： 2-5 金属材料选型也可由银合金或铜合金组成， 成分按一定 比例组合而成。 金属膜层镀膜为真空磁控溅镀。
或者采用工艺：
黑色树脂层的形成： 将黑色树脂经过旋转涂布方式或刮式涂布方式均匀涂 布在透明基板上， 涂布厚度为 0.3μιη~5μιη， 经过加热器预烤， 曝光， 显影， 使 之形成所需之黑色树脂区域；
二氧化硅层的形成： 经过二氧化硅镀膜， 使在黑色树脂层上形成一层透明 及厚度均匀的二氧化硅膜层， 其厚度为 100~1000埃米；
五氧化二铌层的形成： 经过五氧化二铌镀膜， 使在二氧化硅层上形成一层 透明及厚度均匀的五氧化二铌膜层， 其厚度为 50~500埃米；
所述黑色树脂是感光性保护层光阻剂 （商品为台湾永光化学所生产
EK410), 是一种黑色负性光阻材料， 主要成分为： 亚克力树脂， 环氧树脂， 负 性感光剂， 乙酸丙二醇单甲基醚酯及黑色颜料， 具体比例为树脂类： 乙酸丙二 醇单甲基醚酯： 黑色颜料及负性感光剂 =15~30： 60-80： 1~10。
ITO过桥电极的形成： 对形成黑色树脂层的透明基板， 再经过 ITO镀膜， 使在玻璃基板上形成一层透明及厚度均匀的 ITO膜层， 其厚度为 50埃米 ~2000 埃米 (面电阻为 10~430欧姆)；
经过 ITO镀膜的透明基板， 在其 ITO表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50~2000 埃米 (面电阻为 10~430欧姆)及规则 ΙΤΟ图案或电极。
所述的 ΙΤΟ过桥电极包括显示屏视区的过桥电极和黑色树脂层边缘搭接电 极， 具有规则图形结构， 两者在同一层面， 相互独立， 相互绝缘。
第一绝缘层的形成：
经过 ΙΤΟ过桥电极后的透明基板， 在其 ΙΤΟ膜面涂布一层厚度均匀的负性 光阻材料， 光阻涂布厚度为 0.5μιη~3μιη;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3μιη和规则的绝缘层图 案 （如长方形， 正方形， 菱形， 椭圆形等图案）。
ΙΤΟ电极层的形成：
形成第一绝缘层的透明基板， 再次经过 ΙΤΟ镀膜， 使在玻璃基板上形成一 层透明及厚度均匀的 ΙΤΟ膜层， 其厚度为 50埃米 ~2000埃米 (面电阻为 10~430 欧姆)；
经过 ΙΤΟ镀膜的透明基板， 在其 ΙΤΟ表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50~2000 埃米 (面电阻为 10~430欧姆)及规则 ΙΤΟ图案或电极；
所述的 ΙΤΟ电极包括电容屏驱动 (ΙΤΟ电极 1)和感应电极 (ΙΤΟ电极 2)，具有 规则图形结构； ΙΤΟ电极 1与 ΙΤΟ电极 2在同一层面， 相互独立， 相互绝缘， 垂直设计。
ΙΤΟ电极 1导通是通过 ΙΤΟ过桥电极 1左右搭接， 使 ΙΤΟ电极 1形成驱动 通路； ΙΤΟ电极 2的导通是自身 ΙΤΟ通过第一绝缘层的底部到顶部的爬升， 再 从第一绝缘层的顶部到底部的下降， 使 IT0电极 2形成感应通路。
金属电极层的形成：
形成 ITO 电极层的透明基板， 经过金属镀膜， 使之在透明基板上形成一层 厚度均匀的金属膜层， 其厚度为 500埃米 ~4000埃米。
经过金属镀膜的透明基板， 在其金属表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 500~4000 埃米及规则金属图案或电极。
第二绝缘层的形成：
经过金属电极后的透明基板， 在其金属膜面涂布一层厚度均匀的负性光阻 材料， 光阻涂布厚度为 0.5μιη~3μιη;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3μιη和规则的绝缘层图 案。
本发明与现有技术相比， 具有如下优点和有益效果：
本发明通过对层叠结构进行合理的设置， 在一层透明基板上完成触摸功能 信号电极和黑色树脂覆盖层， 优化层叠 ΙΤΟ过桥电极层等顺序和图案的方式， 大幅提升了产品的良率， 降低成本， 提升产品可靠性。 本发明中基板厚度 0.5mm~2.0mm之间， 具有厚度薄， 质量轻等优势； 通过对各层的合理设计， 有 效的提高电容式触摸屏的透过率， 降低了 ITO图案的可视性， 触摸屏的可靠性 进一步提升。
本发明采用 ITO过桥的设计结构， 使得触摸屏在显示区视窗区域看不到金 属过桥点， 大幅提升了产品透过率。 附图说明
图 1为本发明所述的 ITO过桥电容触摸屏的结构示意图;
图 2为本发明实施例所述的玻璃基板结构示意图；
图 3为 ITO 过桥局部放大结构示意图；
图 4为 ITO过桥剖面结构示意图； 图 5为本发明所述的 ITO过桥电容一体式触摸屏的剖面结构示意图;
图 6为实施例产品透过率对比试验结果图；
图 7为实施例图案可视性对比试验结果图。 具体实施方式
下面结合具体实施例对本发明作进一步详细说明。
如图 1及图 2所示，所述的 ITO过桥电容触摸屏，包括厚度在 0.5mm~2.0mm 之间的化学强化玻璃基板或树脂材料基板 11， 依次层叠于玻璃基板的二氧化硅 层 12、 五氧化二铌层 13、 黑色树脂层 14、 ITO过桥电极 15、 第一绝缘层 16、 ITO电极 17、 金属电极 18和第二绝缘层 19; 所述的 ITO过桥电极 15包括显示 屏视区的过桥电极和黑色树脂层边缘搭接电极， 具有规则图形结构， 可以是菱 形， 或条形， 或方块形， 或雪花型， 或十字型等图形。
玻璃基板包括视窗区 21和非视窗区 22， 黑色树脂层 12分布在显示屏非视 窗区 22。
所述的黑色树脂层可有效遮挡非可视区的图层， 可以遮光， 以及遮挡金属 线等产品下方的可见物。
图 3至图 6所示为本实施例所述 ITO过桥电容触摸屏的局部结构放大示意 图或者剖面结构示意图： ITO过桥电极 45包括显示屏视窗区的过桥电极 1和黑 色树脂层 51边缘过桥电极 2， 两者具有规则图形结构， 可以是菱形， 或条形， 或方块形， 或雪花型， 或十字型等图形； 过桥电极 1连接导通 ITO电极 17的驱 动线 (ITO电极 1左右端 )44或感应线 (ITO 电极 2上下端一图中未显示 )47;过桥 电极 2连接导通金属电极 48与 ITO电极的驱动线 (ITO电极 1)44或感应线 (ITO 电极 2)47和防止 ITO电极的驱动线 (ITO电极 1)44或感应线 (ITO电极 2)47在黑 色树脂层 51斜坡处断裂。第一绝缘层 46使 ITO电极的驱动线 (ITO电极 1)44与 感应线 (ITO电极 2)47处于绝缘状况， 互不导通。 ITO电极信号导通的柔性线路 板邦定区域通过金属电极实现。 第二绝缘层 49保护金属电极 48与 ITO导线， 使之与空气绝缘。
其制备工艺如下： 二氧化硅层的形成： 经过二氧化硅镀膜，使在玻璃基板上形成一层透明及厚 度均匀的二氧化硅膜层， 其厚度分别选择 0、 50、 100、 300、 400、 700、 1000 和 1500埃米；
五氧化二铌层的形成： 经过五氧化二铌镀膜，使在二氧化硅镀膜层上形成一 层透明及厚度均匀的五氧化二铌膜层， 其厚度分别选择 0、 20、 50、 150、 200、 400、 500和 1000埃米；
将黑色树脂经过旋转涂布方式或刮式涂布方式均匀涂布在透明基板 41 ( 11 ) 上， 涂布厚度为 0.3μιη~5μιη， 经过加热器预烤， 曝光， 显影， 使之形成所需的 黑色树脂区域； 黑色树脂区域呈梯形结构， 中间厚度为 0.3μιη~5μιη， 其边缘斜 角为 6~60度之间，角度平缓， 目的为 ΙΤΟ电极 (驱动线 ΙΤΟ电极 1和感应线 ΙΤΟ 电极 2)通过斜坡时不会由于厚度差异大导致 ΙΤΟ电极断裂。 黑色树脂区域为显 示屏非视窗区， 目的为遮挡金属电极； 所述黑色树脂是感光性保护层光阻剂（商 品为台湾永光化学所生产 EK410),是一种黑色负性光阻材料，主要成分为:亚克 力树脂， 环氧树脂， 负性感光剂， 乙酸丙二醇单甲基醚酯及黑色颜料， 具体比 例为树脂类： 乙酸丙二醇单甲基醚酯： 黑色颜料及负性感光剂 =15~30： 60-80： 1~10。
预烤温度及时间范围为: 60度~150度， 50秒到 200秒， 曝光能量采用 lOOmj 到 500mj， 显影液采用 Na系或 Ka系碱性溶液， 显影之温度采用 20~40度恒温 作业。 再经过黑色树脂层硬烤， 条件为 200度到 300度， 时间为半小时到 3小 时， 经过上述制程后， 最终形成厚度为 0.3μιη~5μιη， 图形规则的黑色树脂层 51 ( 12)。
ΙΤΟ过桥电极的形成： 对透明玻璃基板进行化学强化， 再经过 ΙΤΟ镀膜， 使在玻璃基板上形成一层透明及厚度均匀的 ΙΤΟ膜层， 其厚度为 50埃米 ~2000 埃米 (面电阻为 10~430欧姆)； ΙΤΟ材料由 Ιη203和 Sn02组成，其质量比为 85~95： 5~15。 ITO镀膜的方式有真空磁控溅镀， 化学气相沉积法， 热蒸镀， 溶胶凝胶。
经过 ITO镀膜的透明玻璃基板， 在其 ITO表面涂布一层厚度均匀的正性光 阻材料， 光阻涂布厚度为 1μηι~5μιη; 正性光阻材料主成分为乙酸丙二醇单甲基 醚酯， 环氧树脂及感光材料。 光阻涂布厚度为 1μιη~5μιη。 涂布光阻材料方式有 滚涂， 旋涂， 刮涂等方式。
经过上述制程之后产品经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最 终形成厚度为 50~2000埃米 (面电阻为 10~430欧姆)及规则 ITO图案或电极。 预 烤温度及时间范围为 :60度~150度， 50秒到 200秒， 曝光能量采用 lOOmj 到 500mj， 显影液采用 Na系或 Ka系碱性溶液， 显影之温度采用 20~40度恒温作 业。 ITO蚀刻液采用盐酸及硝酸按一定比例混合而成的药液， 使其酸的 PH值落 在 1~3之间， 蚀刻温度在 40~50度之间作业。 脱光阻膜液采用二甲亚砜和乙醇 胺按一定的比例混合而成， 百分比为 70%: 30%, 脱膜温度在 40~80度之间作 业。
第一绝缘层的形成：
经过 ITO过桥电极后的透明玻璃基板， 在其 ITO膜面涂布一层厚度均匀的 负性光阻材料， 负性光阻材料主成分为乙酸丙二醇单甲基醚酯， 亚克力树脂， 环氧树脂及负性感光剂， 光阻涂布厚度为 0.5μιη~3μιη; 涂布负性光阻材料方式 有旋涂， 刮涂等方式。
经过上述制程之后产品经过光阻预烤，曝光，显影，最终形成厚度为 0.5~3μιη 和规则的绝缘层图案。 预烤温度及时间范围为: 60度~150度， 50秒到 200秒， 曝光能量采用 lOOmj到 500mj， 显影液采用 Na系或 Ka系碱性溶液， 显影之温 度采用 20~40度恒温作业。 再经过绝缘层硬烤， 条件为 200度到 300度， 时间 为半小时到 3小时， 经过上述制程后， 最终形成厚度为 0.5μιη~3μιη， 图形规则 的绝缘层 1。
ΙΤΟ电极层的形成：
形成第一绝缘层的透明玻璃基板， 再次经过 ΙΤΟ镀膜， 使在玻璃基板上形 成一层透明及厚度均匀的 ΙΤΟ 膜层， 其厚度为 50 埃米 ~2000 埃米 (面电阻为 10-430欧姆); ΙΤΟ材料由 Ιη203和 Sn02组成， 其质量比为 85-95： 5~15。 ITO 镀膜的方式有真空磁控溅镀， 化学气相沉积法， 热蒸镀， 溶胶凝胶。
经过 ITO镀膜的玻璃基板， 在其 ITO表面涂布一层厚度均匀的正性光阻材 料， 正性光阻材料主成分为乙酸丙二醇单甲基醚酯， 环氧树脂及感光材料； 光 阻涂布厚度为 1μιη~5μιη。 涂布光阻材料方式有滚涂， 旋涂， 刮涂等方式。 经过上述制程之后产品经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最 终形成厚度为 50~2000埃米 (面电阻为 10~430欧姆)及规则 ITO图案或电极。 预 烤温度及时间范围为 :60度~150度， 50秒到 200秒， 曝光能量采用 lOOmj 到 500mj， 显影液采用 Na系或 Ka系碱性溶液， 显影之温度采用 20~40度恒温作 业。 ITO蚀刻液采用盐酸及硝酸按一定比例混合而成的药液， 使其酸的 PH值落 在 1~3之间， 蚀刻温度在 40~50度之间作业。 脱光阻膜液采用二甲亚砜和乙醇 胺按一定的比例混合而成， 百分比为 70%: 30%, 脱膜温度在 40~80度之间作 业。
所述的 ITO电极包括电容屏驱动 (ITO电极 1)和感应电极 (ITO电极 2)，具有 规则图形结构； ITO电极 1与 ITO电极 2在同一层面， 相互独立， 相互绝缘， 垂直设计。
金属电极层的形成：
形成 ITO 电极层的玻璃基板， 再经过金属镀膜， 使在玻璃基板上形成一层 厚度均匀的金属膜层， 其厚度为 500埃米 ~4000埃米。 金属膜层材料为 MoNb, AlNd, MoNb堆积而成的三明治结构， 厚度按 50埃米 ~500埃米: 500埃米 ~3000 埃米: 50埃米 ~500埃米比例搭配， 其中 MoNb合金材料中 Mo和 Nb质量比为 85-95： 5-15 , AlNd合金材料中 A1和 Nd质量比为 95~98： 2~5。 金属材料选型 也可由银合金或铜合金组成， 成分按一定比例组合而成。 金属镀膜为真空磁控 经过金属镀膜的玻璃基板， 在其金属表面涂布一层厚度均匀的正性光阻材 料， 正性光阻材料主成分为乙酸丙二醇单甲基醚酯， 环氧树脂及感光材料； 光 阻涂布厚度为 1μιη~5μιη。 涂布光阻材料方式有滚涂， 旋涂， 刮涂等方式。 经过 上述制程之后产品经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚 度为 500~4000埃米及规则金属图案或电极。 预烤温度及时间范围为: 60度~150 度， 50秒到 200秒， 曝光能量采用 lOOmj到 500mj， 显影液采用 Na系或 Ka系 碱性溶液， 显影之温度采用 20~40度恒温作业。 金属蚀刻液采用磷酸、 醋酸及 硝酸按一定比例混合而成的药液， 蚀刻温度在 40~50度之间作业。 脱光阻膜液 采用二甲亚砜和乙醇胺按一定的比例混合而成， 百分比为 70%: 30%, 脱膜温度 在 40~80度之间作业。
所述的金属电极线路布线仅在黑色树脂区域， 视窗区无金属电极。
第二绝缘层的形成：
经过金属电极后的玻璃基板， 在其金属膜面涂布一层厚度均匀的负性光阻 材料， 负性光阻材料主成分为乙酸丙二醇单甲基醚酯， 亚克力树脂， 环氧树脂 及负性感光剂 （商品名为台湾达兴公司生产 POC A46 ) ; 光阻涂布厚度为 0.5μιη~3μιηο 涂布负性光阻材料方式有旋涂， 刮涂等方式。
经过上述制程之后产品经过光阻预烤，曝光，显影，最终形成厚度为 0.5~3μιη 和规则的绝缘层图案。 预烤温度及时间范围为: 60度~150度， 50秒到 200秒， 曝光能量采用 lOOmj到 500mj， 显影液采用 Na系或 Ka系碱性溶液， 显影之温 度采用 20~40度恒温作业。 再经过绝缘层硬烤， 条件为 200度到 300度， 时间 为 0.5小时到 3小时， 经过上述制程后， 最终形成厚度为 0.5μιη~3μιη， 图形规 则的第二绝缘层。
随着时代的进步， 电子产品越来越强调品质， 精益求精， 一体式触摸屏也 不例外。 消费者越来越青睐高透过率， 低反射率， ΙΤΟ图案不可见性， 可靠性更 高的产品。 这样对我们设计一体式触摸屏提出的要求越来越高。
本发明使用二氧化硅材料和五氧化二铌材料， 合理搭配其厚度 （实验结果 如图 6及图 7所示） 筛选出制作触摸屏的合适厚度， 使其在产品的透过率和图 案的可视度有了显著的提升。 尤其是二氧化硅膜层厚度选择在 100-1000埃米之 间， 五氧化二铌膜层厚度选择在 50-500埃米之间， 有着极优的效果， 产品透过 率可以稳定在 93%以上， 图案可视性的等级可以稳定在 2级以内 (图案可视性分 级定义为： 0级一完全看不到， 10级非常明显可见， 依次递加 ΙΤΟ图案越可视与 明显)。
二氧化硅材料有抗反射、 减轻底影的功能。 由于在不同偏振态的光在膜层 和空气及膜层和衬底界面上反射后相位和振幅的变化不同， 因此二氧化硅层会 经过膜层反射后改变偏振态， 会降低产品反射率， 减轻图案可视性。 随着二氧 化硅膜层的增加， 膜层的干涉效果会产生一定的增透效果。 普通玻璃的反射率 大约 5%， 镀有二氧化硅材料的玻璃其反射率大约 2%。 人眼某一视角看有 ΙΤΟ 图案的普通玻璃， 能显著的看到玻璃上 ιτο图案。 人眼某一视角看有 ITO图案 的镀有二氧化硅的玻璃， 其不能显著的看到玻璃上 ITO图案。
如果采用黑色树脂层、 二氧化硅层、 五氧化二铌层的布层顺序， 制造工艺 则调整为：
黑色树脂层的形成： 将黑色树脂经过旋转涂布方式或刮式涂布方式均匀涂 布在透明基板上， 涂布厚度为 0.3μιη~5μιη， 经过加热器预烤， 曝光， 显影， 使 之形成所需之黑色树脂区域；
二氧化硅层的形成： 经过二氧化硅镀膜， 使在黑色树脂层上形成一层透明 及厚度均匀的二氧化硅膜层， 其厚度为 100~1000埃米；
五氧化二铌层的形成： 经过五氧化二铌镀膜， 使在二氧化硅层上形成一层 透明及厚度均匀的五氧化二铌膜层， 其厚度为 50~500埃米；
其余的工艺， 并不需要作出过多的调整。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明， 不 能认定本发明的具体实施只局限于这些说明。 对于本发明所属技术领域的普通 技术人员来说， 在不脱离本发明构思的前提下， 还可以做出若干简单推演或替 换， 都应当视为属于本发明的保护范围。

Claims

WO 2013/143397 权 利 要 求 书 PCT/CN2013/072592
1、 一禾中新型 ιτο过桥一体式电容触摸屏， 其特征是： 包括透明基板， 依 次层叠于透明基板的二氧化硅层、 五氧化二铌层、 黑色树脂层、 ΙΤ0过桥电极、 第一绝缘层、 ΙΤ0电极、 金属电极和第二绝缘层； 所述的 ΙΤ0电极包括电容屏 驱动和感应电极， 具有规则图形结构； 电容屏驱动与感应电极在同一层面， 相 互独立， 相互绝缘， 垂直设计； 所述透明基板包括视窗区和非视窗区， 黑色树 脂层分布在显示屏非视窗区； 所述的金属电极线路布线仅在黑色树脂层区域； 所述的二氧化硅层厚的度为 100~1000 埃米， 所述的五氧化二铌层的厚度为 50~500埃米。
2、 一禾中新型 ΙΤΟ过桥一体式电容触摸屏， 其特征是： 包括透明基板， 依 次层叠于透明基板的黑色树脂层、 二氧化硅层、 五氧化二铌层、 ΙΤΟ过桥电极、 第一绝缘层、 ΙΤΟ电极、 金属电极和第二绝缘层； 所述的 ΙΤΟ电极包括电容屏 驱动和感应电极， 具有规则图形结构； 电容屏驱动与感应电极在同一层面， 相 互独立， 相互绝缘， 垂直设计； 所述透明基板包括视窗区和非视窗区， 黑色树 脂层分布在显示屏非视窗区； 所述的金属电极线路布线仅在黑色树脂层区域； 所述的二氧化硅层厚的度为 100~1000 埃米， 所述的五氧化二铌层的厚度为 50-500埃米
3、 如权利要求 1或 2所述的新型 ΙΤΟ过桥一体式电容触摸屏， 其特征是： 所述的透明基板为厚度在 0.5mm~2.0mm的化学强化玻璃基板或树脂材料基板； 所述 ITO电极规则结构为菱形， 或条形， 或方块形， 或十字型。
4、 如权利要求 3所述的新型 ITO过桥一体式电容触摸屏， 其特征是： 所述 的黑色树脂层厚度为 0.3μιη~5μιη; ITO过桥电极厚度为 50埃米 ~2000埃米； 第 一绝缘层的厚度为 0.5~3μιη; ITO电极层厚度为 50~2000埃米； 金属电极层的厚 度为 500~4000埃米； 第二绝缘层厚度为 0.5~3μιη。
5、 如权利要求 4所述的新型 ITO过桥一体式电容触摸屏， 其特征是： 所述 的金属镀膜的金属膜层为 MoNb, AlNd, MoNb堆积而成的三明治结构， 三者 厚度按 50埃米 ~500埃米: 500埃米 ~3000埃米: 50埃米 ~500埃米比例搭配， 其中 MoNb合金材料中 Mo和 Nb质量比为 85~95： 5-15, AlNd合金材料中 A1和 Nd 质量比为 95~98： 2~5。
6、 如权利要求 5所述的新型 ITO过桥一体式电容触摸屏， 其特征是： 所述 的 ΙΤΟ包括 In203和 Sn02， 其质量比为 85~95： 5~15。
7、 一种制备新型 ITO过桥一体式电容触摸屏的方法， 包括步骤：
二氧化硅层的形成： 经过二氧化硅镀膜， 使在透明基板上形成一层透明及 厚度均匀的二氧化硅膜层， 其厚度为 100~1000埃米；
五氧化二铌层的形成： 经过五氧化二铌镀膜， 使在二氧化硅层上形成一层 透明及厚度均匀的五氧化二铌膜层， 其厚度为 50~500埃米；
黑色树脂层的形成：
将黑色树脂经过旋转涂布方式或刮式涂布方式均匀涂布在透明基板的非视 窗区， 涂布厚度为 0.3μιη~5μιη， 经过加热器预烤， 曝光， 显影， 使之形成所需 的黑色树脂区域； 所述黑色树脂是感光性保护层光阻剂， 所述光阻剂包括亚克 力树脂， 环氧树脂， 负性感光剂， 乙酸丙二醇单甲基醚酯及黑色颜料； 其比例 为树脂类：乙酸丙二醇单甲基醚酯：黑色颜料及负性感光剂 =15~30： 60-80： 1-10；
ΙΤΟ过桥电极的形成：
对形成黑色树脂层的透明基板， 再经过 ΙΤΟ镀膜， 使在透明基板上形成一 层透明及厚度均匀的 ΙΤΟ膜层， 其厚度为 50埃米 ~2000埃米；
经过 ΙΤΟ镀膜的透明基板， 在其 ΙΤΟ表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50~2000 埃米及规则 ΙΤΟ图案或电极；
所述的 ΙΤΟ过桥电极包括视窗区的过桥电极 1和黑色树脂层边缘搭接电极 2, 两者具有规则图形结构； 过桥电极 1连接导通 ΙΤΟ电极的驱动线或感应线； 过桥电极 2连接导通金属电极与 ΙΤΟ电极的驱动线或感应线；
第一绝缘层的形成：
经过 ΙΤΟ过桥电极后的透明基板， 在其 ΙΤΟ膜面涂布一层厚度均匀的负性 光阻材料， 光阻涂布厚度为 0.5μιη~3μιη;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3μιη和规则的绝缘层图 案； ITO电极层的形成：
形成第一绝缘层的透明基板， 再次经过 ΙΤ0镀膜， 使在玻璃基板上形成一 层透明及厚度均匀的 ΙΤ0膜层， 其厚度为 50埃米 ~2000埃米；
经过 ΙΤΟ镀膜的透明基板， 在其 ΙΤΟ表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50~2000 埃米及规则 ΙΤΟ图案或电极；
所述的 ΙΤΟ电极包括 ΙΤΟ电极 1和 ΙΤΟ电极 2， 具有规则图形结构； ΙΤΟ 电极 1与 ΙΤΟ电极 2在同一层面， 相互独立， 相互绝缘， 垂直设计；
金属电极层的形成：
形成 ΙΤΟ 电极层的透明基板， 经过金属镀膜， 使之在透明基板上形成一层 厚度均匀的金属膜层， 其厚度为 500埃米 ~4000埃米；
经过金属镀膜的透明基板， 在其金属表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 500~4000 埃米及规则金属图案或电极；
第二绝缘层的形成：
经过金属电极后的透明基板， 在其金属膜面涂布一层厚度均匀的负性光阻 材料， 光阻涂布厚度为 0.5μιη~3μιη;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3μιη和规则的绝缘层图 案。
8、 一种制备新型 ΙΤΟ过桥一体式电容触摸屏的方法， 包括步骤：
黑色树脂层的形成： 将黑色树脂经过旋转涂布方式或刮式涂布方式均匀涂 布在透明基板上， 涂布厚度为 0.3μιη~5μιη， 经过加热器预烤， 曝光， 显影， 使 之形成所需之黑色树脂区域；
二氧化硅层的形成： 经过二氧化硅镀膜， 使在黑色树脂层上形成一层透明 及厚度均匀的二氧化硅膜层， 其厚度为 100~1000埃米；
五氧化二铌层的形成： 经过五氧化二铌镀膜， 使在二氧化硅层上形成一层 透明及厚度均匀的五氧化二铌膜层， 其厚度为 50~500埃米；
所述黑色树脂是感光性保护层光阻剂， 所述光阻剂包括亚克力树脂， 环氧 树脂， 负性感光剂， 乙酸丙二醇单甲基醚酯及黑色颜料； 其比例为树脂类： 乙 酸丙二醇单甲基醚酯： 黑色颜料及负性感光剂 =15~30： 60-80： 1-10；
ITO过桥电极的形成：
对形成黑色树脂层的透明基板， 再经过 ITO镀膜， 使在透明基板上形成一 层透明及厚度均匀的 ITO膜层， 其厚度为 50埃米 ~2000埃米；
经过 ITO镀膜的透明基板， 在其 ITO表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50~2000 埃米及规则 ΙΤΟ图案或电极；
所述的 ΙΤΟ过桥电极包括视窗区的过桥电极 1和黑色树脂层边缘搭接电极 2, 两者具有规则图形结构； 过桥电极 1连接导通 ΙΤΟ电极的驱动线或感应线； 过桥电极 2连接导通金属电极与 ΙΤΟ电极的驱动线或感应线；
第一绝缘层的形成：
经过 ΙΤΟ过桥电极后的透明基板， 在其 ΙΤΟ膜面涂布一层厚度均匀的负性 光阻材料， 光阻涂布厚度为 0.5μιη~3μιη;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3μιη和规则的绝缘层图 案；
ΙΤΟ电极层的形成：
形成第一绝缘层的透明基板， 再次经过 ΙΤΟ镀膜， 使在玻璃基板上形成一 层透明及厚度均匀的 ΙΤΟ膜层， 其厚度为 50埃米 ~2000埃米；
经过 ΙΤΟ镀膜的透明基板， 在其 ΙΤΟ表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50~2000 埃米及规则 ΙΤΟ图案或电极；
所述的 ΙΤΟ电极包括 ΙΤΟ电极 1和 ΙΤΟ电极 2， 具有规则图形结构； ΙΤΟ 电极 1与 ΙΤΟ电极 2在同一层面， 相互独立， 相互绝缘， 垂直设计； 金属电极层的形成：
形成 ITO 电极层的透明基板， 经过金属镀膜， 使之在透明基板上形成一层 厚度均匀的金属膜层， 其厚度为 500埃米 ~4000埃米；
经过金属镀膜的透明基板， 在其金属表面涂布一层厚度均匀的正性光阻材 料， 光阻涂布厚度为 1μιη~5μιη;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 500~4000 埃米及规则金属图案或电极；
第二绝缘层的形成：
经过金属电极后的透明基板， 在其金属膜面涂布一层厚度均匀的负性光阻 材料， 光阻涂布厚度为 0.5μιη~3μιη;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3μιη和规则的绝缘层图 案。
9、如权利要求 7或者 8所述的制备新型 ΙΤΟ过桥一体式电容触摸屏的方法， 其特征是： 所述的透明基板为厚度在 0.5~2.0毫米的化学强化玻璃基板； 所述的 ΙΤΟ包括 In203和 Sn02， 其质量比为 85~95： 5~15。
10、 如权利要求 9所述的制备新型 ITO过桥一体式电容触摸屏的方法， 其特征是： 所述的正性光阻材料主成分为乙酸丙二醇单甲基醚酯， 环氧树脂及 正性感光剂； 负性光阻材料主成分为乙酸丙二醇单甲基醚酯， 亚克力树脂， 环 氧树脂及负性感光剂； 所述的金属镀膜的金属膜层为 MoNb, AlNd, MoNb堆 积而成的三明治结构， 其厚度按 50埃米 ~500埃米: 500埃米 ~3000埃米: 50埃米 -500埃米比例搭配， 其中 MoNb合金材料中 Mo和 Nb质量比为 85-95： 5-15, AlNd合金材料中 A1和 Nd质量比为 95~98： 2-5； 所述的二氧化硅、 五氧化二 铌、 ITO镀膜的方式为真空磁控溅镀， 或者为化学气相沉积法， 或者为热蒸镀，
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