WO2013143183A1 - 光刻蚀方法及曝光系统 - Google Patents

光刻蚀方法及曝光系统 Download PDF

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Publication number
WO2013143183A1
WO2013143183A1 PCT/CN2012/073975 CN2012073975W WO2013143183A1 WO 2013143183 A1 WO2013143183 A1 WO 2013143183A1 CN 2012073975 W CN2012073975 W CN 2012073975W WO 2013143183 A1 WO2013143183 A1 WO 2013143183A1
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Prior art keywords
reticle
pattern
mask
new
layer
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Ceased
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PCT/CN2012/073975
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English (en)
French (fr)
Inventor
郑文达
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US13/512,340 priority Critical patent/US20130252428A1/en
Publication of WO2013143183A1 publication Critical patent/WO2013143183A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Definitions

  • the present invention relates to the field of semiconductor fabrication, and in particular to a photolithography method and an exposure system.
  • Photolithography is a technique for performing precise, small and complex pattern processing on thin film surfaces or metals. Especially in the semiconductor manufacturing industry, it is an extremely important manufacturing technology.
  • the photolithography process is a relatively complex process in which exposure is the most important process in photolithography. Exposure requires materials such as a reticle, light source, and substrate.
  • photolithography is a multi-step pattern transfer process.
  • First, the desired pattern is formed on the mask, and then the desired pattern is transferred to the wafer surface by photolithography.
  • Floor Specifically, first, the pattern is transferred to a photoresist layer, that is, a photoresist layer.
  • the photoresist layer changes its properties and structure after exposure to a reticle, that is, from the original soluble matter to the non-soluble matter, or vice versa.
  • the soluble portion is removed by a chemical solvent to form a hollow structure corresponding to the mask pattern, and the pattern of the mask is transferred to the photoresist layer.
  • Second, the pattern is transferred from the photoresist layer to the wafer.
  • the film layer on the portion of the wafer that is not protected by the photoresist is removed by different etching methods, and the pattern transfer is completely completed.
  • each exposure process usually uses only one photomask for exposure. After using the mask of this exposure, the next exposure usually requires a new mask after the exposure pattern is different. . However, if the pattern on the reticle of the next exposure is only increased or decreased relative to the pattern on the reticle of the previous exposure, only a new reticle or a new reticle can be replaced, for the above case, Not only is it time consuming, but it also greatly increases manufacturing costs.
  • the technical problem to be solved by the present invention is to provide a photolithography method and an exposure system, which can reduce the re-production probability of the photomask and save cost.
  • a technical solution adopted by the present invention is to provide a photolithography method, comprising: forming a material layer to be patterned on a substrate; forming a photoresist layer on the material layer; Exposing the photoresist layer using at least two reticle layers, each reticle is provided with a corresponding pattern, and at least two corresponding patterns on the reticle are superimposed to form a new pattern, wherein the new pattern corresponds to a light At least one line of the corresponding pattern on the cover is located between two adjacent lines corresponding to the corresponding pattern on the other mask; the exposed photoresist layer is processed to obtain a hollow structure corresponding to the new pattern; The structure etches the material layer to form a patterned material layer; after forming the patterned material layer, the photoresist layer of the hollow structure is removed.
  • the reticle of the corresponding pattern superimposed to form a new pattern is a set of reticle
  • each hood comprises a main reticle and a auxiliary reticle
  • at least two of the reticle are the same reticle
  • the auxiliary reticle The mask is a different mask.
  • At least one line corresponding to a corresponding pattern on a reticle in the new pattern is located at an intermediate position between two adjacent lines corresponding to the corresponding pattern on the other reticle.
  • each line of the corresponding pattern corresponding to a corresponding pattern on the reticle is located at an intermediate position between two adjacent lines corresponding to the corresponding pattern on the other reticle.
  • one technical solution adopted by the present invention is to provide another photolithography method, comprising: forming a material layer to be patterned on a substrate; forming a photoresist layer on the material layer; Exposing the photoresist layer using at least two reticle layers, each reticle is provided with a corresponding pattern, at least two corresponding patterns on the reticle are superimposed to form a new pattern; and the exposed photoresist is exposed
  • the agent layer is processed to obtain a hollow structure corresponding to the new pattern; the material layer is etched by the hollow structure to form a patterned material layer.
  • the reticle of the corresponding pattern superimposed to form a new pattern is a set of reticle
  • each hood comprises a main reticle and a auxiliary reticle
  • at least two of the reticle are the same reticle
  • the auxiliary reticle The mask is a different mask.
  • At least one line corresponding to a corresponding pattern on a reticle in the new pattern is located between two adjacent lines corresponding to the corresponding pattern on the other reticle.
  • At least one line corresponding to a corresponding pattern on a reticle in the new pattern is located at an intermediate position between two adjacent lines corresponding to the corresponding pattern on the other reticle.
  • each line of the corresponding pattern corresponding to a corresponding pattern on the reticle is located at an intermediate position between two adjacent lines corresponding to the corresponding pattern on the other reticle.
  • the step of forming the patterned material layer comprises: removing the photoresist layer of the hollow structure.
  • a technical solution adopted by the present invention is to provide an exposure system, the exposure system includes: a light source; a first photomask, the first mask is provided with a first pattern; and the second mask is second. a second pattern is disposed on the reticle; wherein, in use, the first reticle and the second reticle are superimposed, and the first pattern and the second pattern are superimposed to form a third pattern, and the light emitted by the light source is transmitted through Three patterns.
  • the third pattern is a semiconductor fabrication pattern of the array substrate in the liquid crystal display panel.
  • the reticle of the corresponding pattern superimposed to form a new pattern is a set of reticle
  • each hood comprises a main reticle and a auxiliary reticle
  • at least two of the reticle are the same reticle
  • the auxiliary reticle The mask is a different mask.
  • At least one line corresponding to a corresponding pattern on a reticle in the new pattern is located between two adjacent lines corresponding to the corresponding pattern on the other reticle.
  • At least one line corresponding to a corresponding pattern on a reticle in the new pattern is located at an intermediate position between two adjacent lines corresponding to the corresponding pattern on the other reticle.
  • each line of the corresponding pattern corresponding to a corresponding pattern on the reticle is located at an intermediate position between two adjacent lines corresponding to the corresponding pattern on the other reticle.
  • the invention has the beneficial effects that, in contrast to the prior art, when a mask is used for exposure, the invention exposes by means of layered superposition of the mask, and a new mask is added or reduced with respect to the original mask. In this way, there is no need to re-create a new mask containing a complete pattern, reducing the chance of re-creating the mask and saving costs.
  • FIG. 1 is a schematic flow chart of an embodiment of a photolithography method of the present invention
  • FIG. 2 is a perspective view of a main reticle in another embodiment of the photolithography method of the present invention.
  • FIG. 3 is a perspective view of a mask of another embodiment of the photolithography method of the present invention.
  • FIG. 4 is a perspective view showing a superposition of a main mask and a sub-mask in another embodiment of the photolithography method of the present invention
  • Figure 5 is an equivalent schematic view of the main mask and the auxiliary mask shown in Figure 4 after being superimposed;
  • FIG. 6 is a schematic perspective view of a photomask according to another embodiment of the present invention.
  • Fig. 7 is an equivalent schematic view showing the reticle of Fig. 6 after the superposition of the reticle of the present invention.
  • FIG. 1 is a schematic flow chart of an embodiment of a photolithography method according to the present invention. As shown in the figure, the method includes the following steps:
  • Step 101 forming a material layer to be patterned on a substrate
  • Photolithography is the most commonly used technology in the fabrication of compound semiconductor devices. It is widely used in the production of planar devices and integrated circuits. For example, in the production of planar transistors and integrated circuits, multiple lithography is required to achieve selectivity. The purpose of diffusion and metal film wiring.
  • the substrate is a wafer and is a silicon wafer used in the fabrication of a silicon semiconductor integrated circuit.
  • the material layer includes a dielectric material such as a metal layer, a polysilicon layer, or an amorphous silicon layer.
  • Step 102 forming a photoresist layer on the material layer
  • the photolithography technique mainly transfers the pattern on the photomask to the photoresist layer on the surface of the substrate to prepare for the next etching or ion implantation. Therefore, a photoresist layer is first formed on the material layer to etch the material layer.
  • Step 103 exposing the photoresist layer by using at least two reticle layers, each reticle is provided with a corresponding pattern, and at least two corresponding patterns on the reticle are superimposed to form a new pattern;
  • a reticle also known as a reticle, can be used to transfer a pattern on the reticle to a layer of material using exposure techniques to form a pattern on the layer of material.
  • the mask pattern required for the current exposure is compared with the pattern of other partial masks existing, only some patterns are added or deleted, and these are added or deleted.
  • the pattern is another pattern of the existing mask, and then the existing plurality of masks can be layered and stacked to form a desired pattern, and the combined multilayer mask is used for exposure.
  • the above multilayer mask refers to two or more layers of photomasks.
  • the light source for exposure is an electron beam, an ion beam, X-rays or extreme ultraviolet rays.
  • the reticle and the substrate need to be accurately projected and positioned to ensure the accuracy of the pattern formed on the substrate.
  • Step 104 processing the exposed photoresist layer to obtain a hollow structure corresponding to the new pattern
  • the portion of the photoresist layer that is exposed may be retained, or the portion of the photoresist layer that is not exposed may be retained, thereby forming a hollow structure corresponding to the new pattern.
  • a new pattern formed by superposition of at least two masks is transferred to the photoresist layer.
  • step 105 the material layer is etched using a hollow structure to form a patterned material layer.
  • a new pattern formed by the superposition of at least two masks is transferred to the photoresist layer, and then the photoresist layer on the material layer is not coated with a photoresist layer by using the photoresist layer of the hollow structure.
  • the protected portion is etched to form a patterned layer of material.
  • a circuit pattern is transferred to a single crystal surface or a dielectric layer by a chemical or physical etching method to form an effective pattern window or a functional pattern.
  • the photoresist layer of the hollowed out structure is removed.
  • the pattern on the main reticle 20 is a T-shaped pattern 21. If the pattern of the reticle is determined by the opaque area, it is called a bright field reticle, the main reticle 20 is a bright field reticle, and the T-shaped 21 area is an opaque area.
  • FIG. 3 is a perspective view of a mask of another embodiment of the photolithography method of the present invention.
  • the pattern on the auxiliary mask 30 is a circle 31.
  • the auxiliary mask 30 is a bright field mask, and the circular 31 area is an opaque area.
  • FIG. 1 A schematic three-dimensional view of the main mask 20 and the auxiliary mask 30 is shown in FIG.
  • FIG. 5 is an equivalent schematic view of the main mask 20 and the auxiliary mask 30 being superimposed.
  • the main mask 20 and the auxiliary mask 30 are superposed to form a new pattern, and the new pattern is equivalent to a mask. It has both a T-shaped 21 pattern and a circular 31 pattern.
  • the reticle of the corresponding pattern superimposed to form a new pattern is a set of reticle, each hood includes a main reticle and a secondary reticle, and the main reticle of at least two reticles is the same reticle.
  • the auxiliary reticle is a different mask.
  • the pattern on the main mask can be superimposed with the corresponding pattern on one or more auxiliary masks to form a new pattern.
  • the above embodiment describes the case where the mask pattern required for this exposure is only increased by some patterns compared with the pattern of other partial masks already existing; for the mask pattern required for this exposure and other existing ones
  • the pattern of a part of the reticle is only a case of deleting some patterns, and can be implemented by the following technical solutions:
  • the photoresist layer is still exposed using at least two reticle overlays, wherein the superimposed reticle includes a main reticle and a secondary reticle.
  • the pattern of the auxiliary reticle is included in the pattern of the main reticle. If the main mask is a dark field mask and the auxiliary mask is a bright field mask, the main mask and the auxiliary mask are superimposed and exposed, and the pattern formed on the material layer is removed from the corresponding mask on the main mask. The remaining pattern of the pattern.
  • the method of superimposing a plurality of masks can easily realize the requirement of high-precision exposure, and the distance between the lines of the pattern formed on the material layer is reduced, thereby avoiding re-making high-precision light.
  • the process of the cover reduces costs and saves time.
  • corresponding patterns are superimposed to form a new pattern, and at least one line corresponding to a corresponding pattern on a mask in the new pattern is located between two adjacent lines corresponding to the corresponding pattern on the other mask. Specifically, at least one line corresponding to a corresponding pattern on a reticle in the new pattern is located at an intermediate position between two adjacent lines corresponding to the corresponding pattern on the other reticle, or a corresponding pattern corresponding to a reticle in the new pattern Each line is located intermediate the two adjacent lines of the corresponding pattern on the other reticle.
  • FIG. 6 is a perspective view of a photomask according to another embodiment of the present invention.
  • the photomask includes a first photomask 61 and a second photomask 62.
  • the first reticle 61 is provided with at least two parallel lines arranged in parallel, such as a straight line 611 and a straight line 612, and the distance is set to be a first predetermined distance; and the second reticle 62 is provided with at least two parallel lines arranged in parallel.
  • the straight line 621, the straight line 622, and the straight line 623 are spaced apart by a second predetermined distance.
  • the straight lines on the first mask 61 and the second mask 62 are stacked in parallel to form a new pattern.
  • the straight line 611 is located between the straight line 622 and the straight line 623
  • the straight line 612 is located between the straight line 621 and the straight line 622.
  • FIG. 7 is an equivalent schematic view of the reticle of FIG. 6 after being superimposed, and the distance between adjacent straight lines on the new pattern formed after the superposition is relative to the first reticle 61 or the second reticle 62. The distance between the adjacent straight lines becomes smaller.
  • only one straight line may be disposed on the first reticle 61 or the second reticle 62, but not only one straight line at the same time.
  • the first predetermined distance may be equal to the second predetermined distance, which is equivalent to superimposing using two masks of the same pattern precision, that is, the straight lines on the first mask 61 and the second mask 62 are parallel and non-overlapping.
  • the superposition is combined to form a new pattern, and the above-described manner is achieved to achieve a high-precision exposure by using a mask with a low-precision pattern.
  • the present invention provides a photomask assembly embodiment.
  • the reticle combination includes a first reticle 61 and a second reticle 62.
  • the first mask 61 is provided with a first pattern (such as a straight line 611 and a straight line 612).
  • the second mask 62 is provided with a second pattern (such as a straight line 621, a straight line 622, and a straight line 623).
  • the first reticle 61 and the second reticle 62 are superimposed together in use, and the first pattern and the second pattern are superimposed to form a third pattern (as shown in the equivalent schematic of FIG. 7).
  • the third pattern is a semiconductor fabrication pattern of the array substrate in the liquid crystal display panel.
  • the third pattern can also be a pattern in other product processes.
  • the reticle in which the corresponding patterns are superimposed to form a new pattern is a set of reticle, such as the first reticle 61 and the second reticle 62.
  • Each of the reticle includes a main reticle and a sub reticle, such as a first reticle 61 as a main reticle and a second reticle 62 as a sub reticle.
  • the main reticle of at least two of the reticle is the same reticle, and the auxiliary reticle is different reticle to achieve the purpose of saving the number of reticle.
  • At least one line corresponding to the corresponding pattern on the main mask in the new pattern is located between two adjacent lines of the corresponding pattern on the auxiliary mask, so as to achieve a high-precision exposure by using a mask with a low-precision pattern.
  • the present invention also provides an embodiment of an exposure system.
  • the exposure system includes a light source, a first reticle 61 and a second reticle 62.
  • the first mask 61 is provided with a first pattern (such as a straight line 611 and a straight line 612).
  • the second mask 62 is provided with a second pattern (such as a straight line 621, a straight line 622, and a straight line 623).
  • the first mask 61 and the second mask 62 are superimposed together, and the first pattern and the second pattern are superimposed to form a third pattern (as shown in the equivalent schematic diagram shown in FIG. 7), and the light emitted by the light source is transparent. Pass the third pattern.
  • the third pattern is a semiconductor fabrication pattern of the array substrate in the liquid crystal display panel.
  • the third pattern can also be a pattern in other product processes.
  • the reticle in which the corresponding patterns are superimposed to form a new pattern is a set of reticle, such as the first reticle 61 and the second reticle 62.
  • Each of the reticle includes a main reticle and a sub reticle, such as a first reticle 61 as a main reticle and a second reticle 62 as a sub reticle.
  • the main reticle of at least two of the reticle is the same reticle, and the auxiliary reticle is different reticle to achieve the purpose of saving the number of reticle.
  • At least one line corresponding to a corresponding pattern on the reticle in the new pattern is located between two adjacent lines corresponding to the corresponding pattern on the other reticle; or at least one line corresponding to the corresponding pattern on the reticle in the new pattern An intermediate position between two adjacent lines corresponding to the corresponding pattern on the other reticle; or each line in the new pattern corresponding to a corresponding pattern on the reticle is located on two adjacent lines corresponding to the corresponding pattern on the other reticle The middle position between.
  • the invention adopts a combined reticle exposure mode, and the existing reticle can be flexibly matched and layered and superimposed to form a desired reticle pattern, thereby reducing the chance of re-production of the reticle and saving cost.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

本发明公开了一种光刻蚀方法，所述方法包括：使用叠加的至少两光罩对光致抗蚀剂层进行曝光，每个光罩上设有相应图案，所述至少两光罩上的相应图案叠加结合而形成新图案；对所述曝光后的光致抗蚀剂层进行处理而得到对应新图案的镂空结构。本发明还公开了一种光罩系统。通过上述方式，本发明能够降低光罩的重新制作机率，节约成本。

Description

光刻蚀方法及曝光系统
【技术领域】
本发明涉及半导体制作领域，特别是涉及一种光刻蚀方法及曝光系统。
【背景技术】
光刻蚀加工是对薄膜表面或金属进行精密、微小和复杂图形加工的技术，尤其在半导体制造工业中，更是一项极为重要的制造技术。光刻蚀工艺流程是一个较为复杂的过程，其中曝光是光刻蚀技术中最重要的工艺环节。曝光需要光罩、光源和基底等材料。
对于半导体制作工艺来说，光刻蚀是一种多步骤的图案转移过程，首先是在光罩上形成所需要的图案，之后通过光刻工艺把所需要的图案转移到晶圆表面的每一层。具体为，首先，图案被转移到光刻胶层，即光致抗蚀剂层。光刻胶层经过一次光罩曝光后自身性质和结构发生变化，即由原来的可溶性物质变为非可溶性物质，或者相反。再通过化学溶剂把可以溶解的部分去掉，形成与光罩图案对应的镂空结构，至此，光罩的图案就转移到光刻胶层。其次，把图案从光刻胶层转移到晶圆上。主要是通过不同的刻蚀方法把晶圆上没有被光刻胶保护的部分的薄膜层去掉，这时图案转移就彻底完成。
在现有的半导体制造工艺中，每次的曝光工艺通常只使用一个光罩进行曝光，使用完这一次曝光的光罩后，因为曝光图案的不同，下一次曝光通常需要换一个新的光罩。然而，若下一次曝光的光罩上的图案相对于前次曝光的光罩上的图案只是增加或减少，也只能重新换一个新的光罩或制作一个新的光罩，对于上述情况，不仅费时，且大大提高制造成本。
【发明内容】
本发明主要解决的技术问题是提供一种光刻蚀方法及曝光系统，能够降低光罩的重新制作机率，节约成本。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种光刻蚀方法，其中，包括：在基底上形成待图案化的材料层；在材料层上形成光致抗蚀剂层；使用叠加的至少两光罩对光致抗蚀剂层进行曝光，每个光罩上设有相应图案，至少两光罩上的相应图案叠加结合而形成新图案，其中，新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的位置；对曝光后的光致抗蚀剂层进行处理而得到对应新图案的镂空结构；利用镂空结构对材料层进行刻蚀，以形成图案化的材料层；形成图案化的材料层后，去除镂空结构的光致抗蚀剂层。
其中，相应图案叠加结合而形成一个新图案的光罩为一套光罩，每套光罩包括主光罩和辅光罩，至少两套光罩中的主光罩为相同光罩，而辅光罩为不同光罩。
其中，新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
其中，新图案中对应一光罩上相应图案的每一线条均位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
为解决上述技术问题，本发明采用的一个技术方案是：提供另一种光刻蚀方法，方法包括：在基底上形成待图案化的材料层；在材料层上形成光致抗蚀剂层；使用叠加的至少两光罩对光致抗蚀剂层进行曝光，每个光罩上设有相应图案，至少两光罩上的相应图案叠加结合而形成新图案；对曝光后的光致抗蚀剂层进行处理而得到对应新图案的镂空结构；利用镂空结构对材料层进行刻蚀，以形成图案化的材料层。
其中，相应图案叠加结合而形成一个新图案的光罩为一套光罩，每套光罩包括主光罩和辅光罩，至少两套光罩中的主光罩为相同光罩，而辅光罩为不同光罩。
其中，新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的位置。
其中，新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
其中，新图案中对应一光罩上相应图案的每一线条均位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
其中，形成图案化的材料层的步骤之后包括：去除镂空结构的光致抗蚀剂层。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种曝光系统，曝光系统包括：光源；第一光罩，第一光罩上设有第一图案；第二光罩，第二光罩上设有第二图案；其中，在使用时第一光罩和第二光罩叠加在一起，使第一图案和第二图案叠加结合而形成第三图案，光源发出的光透过第三图案。
其中，第三图案是液晶显示面板中阵列基板的半导体制作图案。
其中，相应图案叠加结合而形成一个新图案的光罩为一套光罩，每套光罩包括主光罩和辅光罩，至少两套光罩中的主光罩为相同光罩，而辅光罩为不同光罩。
其中，新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的位置。
其中，新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
其中，新图案中对应一光罩上相应图案的每一线条均位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
本发明的有益效果是：区别于现有技术使用一个光罩进行曝光的情况，本发明通过光罩分层叠加的方式进行曝光，对于相对于原始光罩只是增加或减少某些图案的新光罩而言，无需重新再制作一个包含完整图案的新光罩，减少重新制作光罩的机率，节约成本。
【附图说明】
图1是 本发明光刻蚀方法一实施例的流程示意图；
图2是 本发明光刻蚀方法另一实施例中主光罩的立体示意图；
图3是 本发明光刻蚀方法另一实施例中辅光罩的立体示意图；
图4是 本发明光刻蚀方法另一实施例中主光罩和辅光罩叠加后的立体示意图；
图5是 图4所示主光罩和辅光罩叠加后的等效示意图；
图6是 本发明光刻蚀方法又一实施例中光罩叠加后的立体示意图；
图7是 本发明图6所示光罩叠加后的等效示意图。
【具体实施方式】
下面结合附图和实施例对本发明进行详细说明。
请参阅图1，图1是本发明光刻蚀方法一实施例的流程示意图，如图所示，所述方法包括以下步骤：
步骤101，在基底上形成待图案化的材料层；
光刻蚀技术是化合物半导体器件制作中最常用的技术，在平面器件和集成电路的生产中得到广泛的应用，比如在平面晶体管和集成电路生产中，要进行多次光刻，以实现选择性扩散和金属膜布线的目的。
其中，基底为晶圆，是硅半导体集成电路制作中所用的硅晶片。
材料层包括金属层、多晶硅层或非晶硅层等介质材料。
步骤102，在材料层上形成光致抗蚀剂层；
光刻蚀技术主要是先将光罩上的图案转移到基底表面的光致抗蚀剂层，为下一步进行刻蚀或者离子注入做准备。因此，在材料层上先形成一光致抗蚀剂层，以便对材料层进行刻蚀。
步骤103，使用叠加的至少两光罩对光致抗蚀剂层进行曝光，每个光罩上设有相应图案，至少两光罩上的相应图案叠加结合而形成新图案；
光罩，也称掩膜板，利用曝光技术可以将光罩上的图案转移到材料层上而形成材料层上的图案。
在本发明中，当需要光罩进行光刻时，若本次曝光需要的光罩图案与已有的其他部分光罩的图案相比，只是增加或删除某些图案，而这些增加或删除的图案又是已有的另一部分光罩的图案，那么可以使用已有的多个光罩分层叠加的方式组合成一个需要的图案，利用组合后的多层光罩进行曝光。上述多层光罩是指两层或两层以上光罩。
其中，曝光的光源为电子束、离子束、X射线或极紫外线等。
需要指出的是，在曝光过程中，需要将光罩与基底进行精确的投影定位，以保证在基底上形成的图案的精确性。
步骤104，对曝光后的光致抗蚀剂层进行处理而得到对应新图案的镂空结构；
根据光致抗蚀剂的特性，可以保留光致抗蚀剂层被曝光的部分，也可保留光致抗蚀剂层未被曝光的部分，从而形成与新图案对应的镂空结构。此时，至少两光罩叠加形成的新图案传递到光致抗蚀剂层。
步骤105，利用镂空结构对材料层进行刻蚀，以形成图案化的材料层。
经过步骤103的光刻蚀，至少两光罩叠加形成的新图案已传递到光致抗蚀剂层，然后利用镂空结构的光致抗蚀剂层对材料层上没有被光致抗蚀剂层保护的部分进行刻蚀，形成图案化的材料层。如在集成电路的制造过程中，利用化学或物理的刻蚀方法，将电路图案传递到单晶表面或介质层上，形成有效的图案窗口或功能图案。
形成需要的图案化的材料层后，去除镂空结构的光致抗蚀剂层。
下面对光罩叠加进行详细说明，以两个光罩为例，如图2、图3、图4以及图5所示：
图2是本发明光刻蚀方法另一实施例中主光罩的立体示意图，如图2所示，主光罩20上的图案为一T字型21。若光罩的图案是由不透光的区域决定的，称其为亮场光罩，上述主光罩20为亮场光罩，T字型21区域为不透光区域。
图3是本发明光刻蚀方法另一实施例中辅光罩的立体示意图，如图3所示，辅光罩30上的图案为一圆形31。辅光罩30为亮场光罩，圆形31区域为不透光区域。
主光罩20和辅光罩30叠加后的立体示意图如图4所示。
如图5所示，图5是主光罩20和辅光罩30叠加后的等效示意图，主光罩20和辅光罩30叠加后形成新的图案，新图案相当于在一个光罩上同时具有T字型21图案和圆形31图案。
如上所述，相应图案叠加结合而形成一个新图案的光罩为一套光罩，每套光罩包括主光罩和辅光罩，至少两套光罩中的主光罩为相同光罩，而辅光罩为不同光罩。
其中，主光罩上的图案可以与一个或一个以上的辅光罩上的相应图案叠加结合而形成新图案。
上面实施例描述的是若本次曝光需要的光罩图案与已有的其他部分光罩的图案相比只是增加某些图案的情况；对于若本次曝光需要的光罩图案与已有的其他部分光罩的图案相比只是删除某些图案的情况，可以采用如下技术方案来实现：
仍然使用叠加的至少两光罩对光致抗蚀剂层进行曝光，其中叠加的光罩包括主光罩和辅光罩。辅光罩的图案包括在主光罩的图案内。若主光罩为暗场光罩，辅光罩为亮场光罩，则主光罩和辅光罩叠加后进行曝光，在材料层上形成的图案为主光罩上去除对应辅光罩的图案剩下的图案。
通过上述方式，不需要重新制作光罩，只利用已有的光罩灵活搭配，即可形成需要的光罩图案。
在实际操作中，以构成为线条的光罩图案为例，若要求的精度越高，在光罩上线条之间的距离要求越小，则成本越大。若采用本发明的方法，利用多个光罩叠加的方式，可以较为容易地实现高精度曝光的要求，使材料层上形成的图案的线条之间的距离减小，避免重新制作高精度的光罩的工序，降低成本，节省时间。
如不同光罩叠加，其相应的图案叠加结合而形成一个新图案，新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的位置，具体可以是新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的中间位置，或新图案中对应一光罩上相应图案的每一线条均位于对应另一光罩上相应图案的两相邻线条之间的中间位置。通过对新图案进行曝光，即能实现采用低精度图案的光罩来实现高精度曝光的要求。
下面以光罩图案是直线为例进行详细说明。
如图6所示，图6是本发明光刻蚀方法又一实施例中光罩叠加后的立体示意图。在图6中，光罩包括第一光罩61和第二光罩62。第一光罩61上设有至少两平行间隔设置的直线，如：直线611和直线612，间隔设置的距离为第一预定距离；第二光罩62上设有至少两平行间隔设置的直线，如：直线621、直线622和直线623，间隔设置的距离为第二预定距离。第一光罩61和第二光罩62上的直线图案平行叠加结合而形成新图案。直线611位于直线622和直线623之间，直线612位于直线621和直线622之间。
如图7所示，图7是图6所示光罩叠加后的等效示意图，叠加后形成的新图案上的相邻直线之间的距离相对于第一光罩61或第二光罩62上相邻直线之间的距离变小。
其中，第一光罩61或第二光罩62上还可以只设置一条直线，但不可同时仅设置为一条直线。
其中，第一预定距离可以与第二预定距离相等，相当于使用两个相同图案精度的光罩进行叠加，即第一光罩61和第二光罩62上的直线图案平行地、不重叠地叠加结合而形成新图案，通过上述方式以实现采用低精度图案的光罩来实现高精度曝光的目的。当然，为了得到更高的精度，还可以采用三个或以上光罩进行分层叠加的方式 。
为了实施图1所示的光刻蚀方法，本发明提供一种光罩组合实施例。仍然以图6中显示的光罩组合为例进行说明，其中光罩组合包括第一光罩61和第二光罩62。第一光罩61上设有第一图案（如直线611和直线612）。第二光罩62上设有第二图案（如直线621、直线622和直线623）。在使用时将第一光罩61和第二光罩62叠加在一起，使第一图案和第二图案叠加结合而形成第三图案（如图7显示的等效示意图）。在本实施例中，第三图案是液晶显示面板中阵列基板的半导体制作图案。当然，第三图案还可以是其他产品制程中的制作图案。
其中，相应图案叠加结合而形成一个新图案的光罩为一套光罩，如第一光罩61和第二光罩62。每套光罩包括主光罩和辅光罩，如将第一光罩61作为主光罩，第二光罩62作为辅光罩。在具备多套光罩的情况下，其中至少两套光罩中的主光罩为相同光罩，而辅光罩为不同光罩，以实现节约光罩数量的目的。并且，新图案中对应主光罩上相应图案的至少一线条位于对应辅光罩上相应图案的两相邻线条之间的位置，以实现采用低精度图案的光罩来实现高精度曝光的目的。
为了实施图1所示的光刻蚀方法，本发明还提供一种曝光系统实施例。仍然以图6中显示的光罩组合为例进行说明，其中曝光系统包括：光源、第一光罩61及第二光罩62。第一光罩61上设有第一图案（如直线611和直线612）。第二光罩62上设有第二图案（如直线621、直线622和直线623）。
在使用时将第一光罩61和第二光罩62叠加在一起，使第一图案和第二图案叠加结合而形成第三图案（如图7显示的等效示意图），光源发出的光透过第三图案。在本实施例中，第三图案是液晶显示面板中阵列基板的半导体制作图案。当然，第三图案还可以是其他产品制程中的制作图案。
其中，相应图案叠加结合而形成一个新图案的光罩为一套光罩，如第一光罩61和第二光罩62。每套光罩包括主光罩和辅光罩，如将第一光罩61作为主光罩，第二光罩62作为辅光罩。在具备多套光罩的情况下，其中至少两套光罩中的主光罩为相同光罩，而辅光罩为不同光罩，以实现节约光罩数量的目的。
其中，新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的位置；或新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的中间位置；或新图案中对应一光罩上相应图案的每一线条均位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
本发明采用组合式的光罩曝光方式，利用已有的光罩灵活搭配，分层叠加，即可形成需要的光罩图案，减少光罩的重新制作机率，节约成本。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (16)

  1. 一种光刻蚀方法，其中，包括：
    在基底上形成待图案化的材料层；
    在所述材料层上形成光致抗蚀剂层；
    使用叠加的至少两光罩对所述光致抗蚀剂层进行曝光，每个光罩上设有相应图案，所述至少两光罩上的相应图案叠加结合而形成新图案，其中，所述新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的位置；
    对所述曝光后的光致抗蚀剂层进行处理而得到对应新图案的镂空结构；
    利用所述镂空结构对材料层进行刻蚀，以形成图案化的材料层；
    形成图案化的材料层后，去除所述镂空结构的光致抗蚀剂层。
  2. 根据权利要求1所述的方法，其中，
    所述相应图案叠加结合而形成一个新图案的光罩为一套光罩，每套所述光罩包括主光罩和辅光罩，至少两套光罩中的主光罩为相同光罩，而辅光罩为不同光罩。
  3. 根据权利要求1所述的方法，其中，
    所述新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
  4. 根据权利要求3所述的方法，其中，
    所述新图案中对应一光罩上相应图案的每一线条均位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
  5. 一种光刻蚀方法，其中，包括：
    在基底上形成待图案化的材料层；
    在所述材料层上形成光致抗蚀剂层；
    使用叠加的至少两光罩对所述光致抗蚀剂层进行曝光，每个光罩上设有相应图案，所述至少两光罩上的相应图案叠加结合而形成新图案；
    对所述曝光后的光致抗蚀剂层进行处理而得到对应新图案的镂空结构；
    利用所述镂空结构对材料层进行刻蚀，以形成图案化的材料层。
  6. 根据权利要求5所述的方法，其中，
    所述相应图案叠加结合而形成一个新图案的光罩为一套光罩，每套所述光罩包括主光罩和辅光罩，至少两套光罩中的主光罩为相同光罩，而辅光罩为不同光罩。
  7. 根据权利要求5所述的方法，其中，
    所述新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的位置。
  8. 根据权利要求7所述的方法，其中，
    所述新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
  9. 根据权利要求8所述的方法，其中，
    所述新图案中对应一光罩上相应图案的每一线条均位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
  10. 根据权利要求5所述的方法，其中，
    所述形成图案化的材料层的步骤之后包括：
    去除所述镂空结构的光致抗蚀剂层。
  11. 一种曝光系统，其中，包括：
    光源；
    第一光罩，所述第一光罩上设有第一图案；
    第二光罩，所述第二光罩上设有第二图案；
    其中，在使用时所述第一光罩和第二光罩叠加在一起，使所述第一图案和第二图案叠加结合而形成第三图案，所述光源发出的光透过第三图案。
  12. 根据权利要求11所述的曝光系统，其中：
    所述第三图案是液晶显示面板中阵列基板的半导体制作图案。
  13. 根据权利要求11所述的曝光系统，其中：
    所述相应图案叠加结合而形成一个新图案的光罩为一套光罩，每套所述光罩包括主光罩和辅光罩，至少两套光罩中的主光罩为相同光罩，而辅光罩为不同光罩。
  14. 根据权利要求11所述的曝光系统，其中：
    所述新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的位置。
  15. 根据权利要求14所述的曝光系统，其中：
    所述新图案中对应一光罩上相应图案的至少一线条位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
  16. 根据权利要求15所述的曝光系统，其中：
    所述新图案中对应一光罩上相应图案的每一线条均位于对应另一光罩上相应图案的两相邻线条之间的中间位置。
PCT/CN2012/073975 2012-03-26 2012-04-13 光刻蚀方法及曝光系统 Ceased WO2013143183A1 (zh)

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