WO2013138802A1 - Traçage par laser permettant de simuler une profondeur étendue dans une pièce à travailler - Google Patents

Traçage par laser permettant de simuler une profondeur étendue dans une pièce à travailler Download PDF

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Publication number
WO2013138802A1
WO2013138802A1 PCT/US2013/032781 US2013032781W WO2013138802A1 WO 2013138802 A1 WO2013138802 A1 WO 2013138802A1 US 2013032781 W US2013032781 W US 2013032781W WO 2013138802 A1 WO2013138802 A1 WO 2013138802A1
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WIPO (PCT)
Prior art keywords
workpiece
laser beam
laser
lens
focusing
Prior art date
Application number
PCT/US2013/032781
Other languages
English (en)
Inventor
Jeffrey P. Sercel
Marco Mendes
Mathew Hannon
Michael Von Dadelszen
Original Assignee
Ipg Microsystems Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/422,190 external-priority patent/US20120234807A1/en
Application filed by Ipg Microsystems Llc filed Critical Ipg Microsystems Llc
Priority to JP2015500676A priority Critical patent/JP2015519722A/ja
Priority to EP13760572.1A priority patent/EP2825344A4/fr
Priority to KR1020147028951A priority patent/KR20140137437A/ko
Priority to CN201380022339.5A priority patent/CN104334312A/zh
Publication of WO2013138802A1 publication Critical patent/WO2013138802A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/042—Automatically aligning the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
    • B23K2101/35—Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Definitions

  • the present invention relates to laser machining, and more particularly, laser scribing with extended depth affectation into a workpiece.
  • Lasers are commonly used to cut or scribe a workpiece such as a substrate or semiconductor wafer.
  • a laser is often used in the process of dicing a semiconductor wafer such that individual devices (or dies) manufactured from the semiconductor wafer are separated from each other.
  • the dies on the wafer are separated by streets and the laser may be used to cut the wafer along the streets.
  • a laser may be used to cut all the way through the wafer, or part way through the wafer with the remaining portion of the wafer separated by breaking the wafer at the point of perforation.
  • LEDs light emitting diodes
  • the individual dies on the wafer correspond to the LEDs.
  • a laser may be focused onto a surface of the substrate or wafer to cause ablation of the material and to effect a partial cut.
  • Laser scribing may be performed on a semiconductor wafer, for example, on the front side of the wafer with the devices formed thereon, referred to as front-side scribing (FSS), or on the back side of the wafer, referred to as back-side scribing (BSS).
  • FSS front-side scribing
  • BSS back-side scribing
  • a laser may be focused inside of a wafer with a high numerical aperture (NA) lens (e.g., NA>0.8) to cause multiphoton absorption within the material.
  • NA numerical aperture
  • the high NA lens provides a very short working distance and very small depth of field (DOF).
  • DOF very small depth of field
  • Stealth scribing also provides a relatively large spot size at the surface of the wafer, which may prevent front side scribing in narrow streets between dies or require fewer dies per wafer.
  • Stealth scribing techniques also present problems when machining wafers with DBR or metal reflector films because of the inability to obtain the desired focus inside of the wafer.
  • Stealth scribing also requires expensive lenses and tight focus tolerances and stealth scribing equipment generally has higher equipment costs and annual maintenance costs.
  • FIG. 1 is a schematic view of a laser scribing system providing extended depth affectation into a workpiece, consistent with embodiments of the present disclosure.
  • FIG. 2 is a schematic view of a focal lens for focusing a laser beam with spherical aberrations outside of a diffraction-limited region, consistent with embodiments of the present disclosure.
  • FIG. 3A is a schematic view of a lens providing a paraxial focused laser beam without spherical aberrations.
  • FIG. 3B is a schematic view of a lens overfilled beyond a diffraction-limited region to provide an aberrated, focused laser beam with a longitudinal spherical aberration range sufficient to extend the depth of field into a workpiece with a limited transverse spherical aberration range.
  • FIG. 3C is a schematic view of a lens overfilled further beyond a diffraction- limited region to provide an aberrated, focused laser beam with a greater longitudinal and transverse spherical aberration range.
  • FIGS. 4A-4C are schematic views of an aberrated, focused laser beam at different focus offsets relative to a surface of a workpiece.
  • FIGS. 5A-5D are schematic views of a focused laser beam from a 60 mm focal length triplet lens into 250 micron thick sapphire with different focus offsets and with different amounts of spherical aberrations.
  • FIGS. 6A-6D are schematic views of a focused laser beam from a 54 mm focal length doublet lens into 250 micron thick sapphire with different focus offsets and with different amounts of spherical aberrations.
  • FIGS. 7A-7D are schematic views of a focused laser beam from a 25 mm focal length triplet lens into 120 micron thick sapphire with different focus offsets and with different amounts of spherical aberrations.
  • FIG. 8 is a photograph showing a surface of a sapphire substrate with a series of ablation holes formed by a method consistent with an embodiment of the present disclosure.
  • FIG. 9 is a photograph showing a side of a sapphire substrate with a series of extended affectations extending from the ablation holes formed by a method consistent with an embodiment of the present disclosure.
  • FIGS. 10A and 10B are schematic views of a laser machining system with a workpiece positioning stage in an alignment position and laser machining position, respectively, consistent with an embodiment of the present disclosure.
  • FIG. 11 is a side schematic view of back side scribing with opposite side alignment of a laser beam with streets on a semiconductor wafer, consistent with an embodiment of the present disclosure.
  • FIGS. 12A and 12B are side schematic views of dual side scribing with opposite side alignment of a laser beam with a shallower back side scribe, consistent with an embodiment of the present disclosure.
  • FIG. 13 is a schematic view of a laser scribing system for scribing with extended depth affectation and an elongated beam spot, consistent with another embodiment of the present disclosure.
  • Systems and methods for laser scribing provide extended depth affectation into a substrate or workpiece by focusing a laser beam such that the beam passes into the workpiece using a waveguide, self- focusing effect to cause internal crystal damage along a channel extending into the workpiece.
  • Different optical effects may be used to facilitate the waveguide, self-focusing effect, such as multi-photon absorption in the material of the workpiece, transparency of the material of the workpiece, and optical aberrations of the focused laser beam.
  • the laser beam may have a wavelength, pulse duration, and pulse energy, for example, to provide transmission at least partially through the material and multi-photon absorption in the material.
  • An aberrated, focused laser beam may also be used to provide a longitudinal spherical aberration range sufficient to extend the effective depth of field (DOF) into the workpiece.
  • DOE effective depth of field
  • Laser scribing with extended depth affectation may be used to scribe workpieces such as substrates or semiconductor wafers, for example, to provide die separation.
  • the laser machining systems and methods described herein may be used to machine semiconductor wafers to separate the dies forming light emitting diodes (LEDs).
  • Laser scribing with extended depth affectation may be used for back-side scribing and/or front-side scribing of semiconductor wafers of varying thicknesses. Different materials may be scribed with extended depth affectation by selecting laser parameters and optics that result in transmission at least partially through the material and multi-photon absorption in the material.
  • the methods described herein may be used to scribe sapphire, silicon, glass, and other substrates or materials that are capable of allowing a laser beam to pass at least partially through the material while being absorbed sufficiently to cause crystal damage.
  • Laser scribing with extended depth affectation may also be advantageously used on workpieces with opaque coatings, for example, because an initial ablation may cut through the opaque coating.
  • machining refers to any act of using laser energy to alter a workpiece and “scribing” refers to the act of machining a workpiece by scanning the laser across the workpiece. Machining may include, without limitation, ablation of the material at a surface of the workpiece and/or crystal damage of the material inside the workpiece.
  • Scribing may include a series of ablations or crystal-damaged regions and does not require a continuous line of ablation or crystal damage.
  • extended depth affectation refers to the crystal damage that occurs along a channel extending inside the workpiece as a result of laser energy and photon-material interaction within the workpiece.
  • Laser scribing with extended depth affectation may ablate an outer portion of the material and then focus the beam internally to cause internal fracturing or crystal damage (i.e., extended depth affectation) resulting in or facilitating scribing or dicing, for example, for wafer die separation.
  • the initial ablation may cause a change in index of refraction, which facilitates the waveguide or self-focusing effect of the laser into the cut to cause a convergence within the material crystal structure, thereby effectively focusing high electric field energy to a point where crystal damage occurs.
  • the laser parameters may be optimized to provide a clean ablation (i.e., with minimal debris) that facilitates the self-focusing effect, as will be described in greater detail below.
  • laser scribing with extended depth affectation may also be performed without ablating the surface of the workpiece.
  • the extended depth affectation may be achieved by adjusting the laser parameters (e.g., wavelength, pulse duration, and pulse energy) to provide transmission at least partially through the material and multi-photon absorption sufficient to disturb the crystalline structure of the material.
  • the laser beam may have a wavelength (e.g., infrared, green or ultraviolet) capable of transmission through the material of the workpiece and may include a pulsed laser beam with ultrashort pulses (e.g., less than 1 ns) or short pulses (e.g., less than 200 ns) providing a peak power that causes the multi-photon absorption.
  • ultrashort pulses e.g., less than 1 ns
  • short pulses e.g., less than 200 ns
  • the laser wavelength may be in the infrared (IR) range as well as the first through fifth harmonics and more particularly in a range of about, for example, 1.04-1.06 ⁇ (IR), 514-532 nm (green), 342-355 nm (UV), or 261-266 nm (UV).
  • IR infrared
  • UV ultraviolet
  • UV ultraviolet
  • UV ultraviolet
  • UV 261-266 nm
  • scribing with extended depth affectation may be achieved with a laser wavelength in the UV range (e.g., 266 nm, 343 nm or 355 nm).
  • silicon scribing with extended depth affectation may be achieved with a laser wavelength in the IR range, for example, longer than 1.2 ⁇ (where silicon starts to transmit) and more specifically about 1.5 ⁇ .
  • Laser wavelengths in the visible range may be used to scribe glass with extended depth affectation. Scribing with extended depth affectation, as disclosed herein, may also be used with semiconductor and dielectric materials with a band gap including, without limitation, GaAs and other III-V materials, SiC, Si, GaN, AIN, and diamond by using laser wavelengths that transmit through those materials.
  • a longer wavelength e.g., as compared to conventional scribing techniques
  • the pulse duration may be shorter than the thermal diffusion timescale causing rapid vaporization of the material, i.e., evaporative ablation with a direct solid to vapor transition.
  • the pulse duration may be sub-picosecond.
  • ultrashort pulse durations less than about 10 ps may be used.
  • longer pulse durations greater than 1 ns or even greater than 100 ns may also be used (e.g., 150 to 200 ns pulses may be used in silicon).
  • Ultrafast lasers may be used, for example, to generate ultrashort pulses of picoseconds or femtoseconds.
  • the ultrafast laser may be capable of producing the raw laser beam at different wavelengths (e.g., about .35 ⁇ , .5 ⁇ , 1 ⁇ , 1.3 ⁇ , 1.5 ⁇ , 2 ⁇ or any increments therebetween) and at different ultrashort pulse durations (e.g., less than about 10 ps).
  • An example of an ultrafast laser includes one of the TruMicro series 5000 picosecond lasers available from TRUMPF.
  • the laser may also provide a pulse energy in a range of about 1 ⁇ ] to 1000 ⁇ at repetition rates in a range of about 10 to 1000 kHz.
  • Laser scribing with extended depth affectation generally uses longer working distance optics (e.g., a lower NA lens as compared to the high NA lenses used for stealth scribing).
  • the longer working distance and lower NA optics may include, for example, focal lenses having a NA less than 0.8 and more particularly less than 0.5 or less than 0.4.
  • Laser scribing with extended depth affectation may also introduce spherical aberrations with a longitudinal spherical aberration range sufficient to extend the effective DOF into a workpiece.
  • Longer working distance, lower NA lenses generally have a longer DOF as compared to higher NA lenses.
  • Using a lens that introduces spherical aberrations may further extend the effective DOF such that the waveguide, self-focusing effect adds energy over an extended zone into the workpiece.
  • the depth of extended depth affectation may be controlled by adjusting the laser parameters (e.g., wavelength, pulse duration, and pulse energy), processing parameters (e.g., pulse spacing), and optics (e.g, operating NA and depth of focus).
  • laser parameters e.g., wavelength, pulse duration, and pulse energy
  • processing parameters e.g., pulse spacing
  • optics e.g, operating NA and depth of focus
  • an embodiment of a laser machining system 100 for laser scribing with extended depth affectation may be used to scribe a workpiece 102, such as a sapphire substrate of a semiconductor wafer.
  • This embodiment of the laser machining system 100 includes a laser 110 for generating a raw laser beam and a beam delivery system 120 for focusing the laser beam and directing the focused laser beam to a surface 104 of the workpiece 102.
  • the beam delivery system 120 includes a beam expander 122 for expanding a raw laser beam 112 from the laser 110 to form an expanded beam 114 and a focusing lens 124 for focusing the expanded beam 114 to provide a focused laser beam 116.
  • the beam delivery system 120 may also include an auto focus system (not shown), although it may not be required.
  • the laser machining system 100 focuses the expanded laser beam 114 such that an energy density of the focused laser beam 116 is sufficient to ablate the surface 104 of the workpiece 102 in an ablation zone 106 and such that the beam passes through the ablation zone 106 and into the workpiece 102 using the waveguide self-focusing effect.
  • the waveguide self-focusing effect thus directs the focused laser beam 116 from the ablation zone 106 to an internal location 108 extending within the workpiece 102 where crystal damage is caused due to shock, electric fields and/or pressure.
  • Each pulse of the focused laser beam 116 forms a beam spot on the workpiece 102 and extends into the workpiece 102 using the waveguide, self-focusing effect to provide high energy over an extended depth and cause the crystal damage along the channel at the internal location 108.
  • a single pulse of the focused laser beam 116 may be sufficient at each location, a multiple pulse process may be used with subsequent pulses providing deeper or stronger material fracturing.
  • the focused laser beam 116 may be scanned across the workpiece 102 such that a series of ablation zones 106 and crystal-damaged internal locations 108 (i.e., extended affectations) are formed along a scribe line by a series of laser pulses.
  • the laser beam 116 may be scanned using a single pass or multiple passes, for example, to achieve a variety of depths and spacings.
  • the workpiece 102 may be moved relative to the focused laser beam 116, for example, to form the series of ablation zones 106 and crystal-damaged internal locations 108.
  • the ablation zones 106 and crystal-damaged internal locations 108 may then facilitate separation of the workpiece 102 along the scribe line.
  • the illustrated embodiment shows front side scribing on a semiconductor wafer with LED dies, the laser machining system 100 may also be used for back side or dual side scribing, as will be described in greater detail below.
  • the laser 110 may be capable of emitting short pulses (e.g., less than about 200 ns) or ultrashort pulses (e.g., less than about 1 ns) at a wavelength capable of passing at least partially through the material of the workpiece 102.
  • the laser 110 is an ultrafast laser that emits a raw laser beam at a wavelength in the UV range (e.g., about 266 nm, 343 nm or 355 nm) with a pulse duration of less than about 10 ps and a pulse energy of about 60 ⁇ .
  • Such a laser provides a wavelength capable of passing through sapphire and a sufficiently high peak power to damage the crystal at the internal location within the sapphire.
  • the laser 110 may be operated at a repetition rate to achieve a desired scribe at a particular scan speed.
  • the UV laser with a pulse energy of about 60 ⁇ may be operated with a repetition rate of about 33.3 kHz and a scan speed in a range of about 70 mm/s to 90 mm/s.
  • the repetition rate may be about 100 kHz with a scan speed of about 100 mm/s to 300 mm/s.
  • a lower power laser e.g., about 8 W
  • a reduced pulse energy e.g., about 40 ⁇
  • a higher repetition rate e.g., about 200 kHz.
  • the beam expander 122 may be a 2x expanding telescope and the focusing lens 124 may be a 60 mm triplet to achieve an effective focusability with a focal depth of about 400 ⁇ and a desired kerf width of about 3 ⁇ .
  • the focusing lens 124 may have a NA less than 0.8 and more particularly less than 0.5 or less than 0.4, which provides a longer working distance and a longer DOF.
  • the focusing lens 124 may also introduce spherical aberrations to provide an aberrated, focused laser beam 116 with a longitudinal spherical aberration range sufficient to extend the effective DOF further into the workpiece 102, as described in greater detail below.
  • the combination of the focused laser beam with the ultrashort or short pulses allows an increased focusability (with lower NA optics) to provide the crystal damage at the internal location 108 of the workpiece 102 while minimizing the volume of removed material (e.g., the debris) on the surface 104 of the workpiece.
  • the laser 110 and the beam delivery system 120 may be configured with laser machining parameters, such as wavelength, pulse duration, pulse energy, peak power, repetition rate, scan speed, and beam length and width, which achieve the surface ablation and self-focusing effect for the material to be scribed and the desired kerf widths.
  • the extended depth affectation may be facilitated by extending the effective DOF of an aberrated, focused laser beam 216 using lens aberrations of a focal lens 224.
  • Lens aberrations are deviations of light rays through a lens from an ideal path predicted by paraxial optics.
  • Spherical aberrations in particular, result from deviations of light rays passing through a lens farther from an optical axis of the lens.
  • a portion of the focal lens 224 generally includes a diffraction-limited region 223 that provides diffraction-limited performance that is essentially free of aberrations (i.e., the affect on performance due to diffraction exceeds the affect on performance due to aberrations).
  • Light rays 213 of a laser beam 214 illuminating the lens 224 within the diffraction-limited region 223 are focused at the paraxial focal plane 226 producing a high resolution focused beam spot within this region of the focused laser beam 216.
  • the focal lens 224 introduces spherical aberrations into the aberrated, focused laser beam 216.
  • the spherical aberrations thus effectively extend the focal point of the aberrated, focused laser beam 216 continuously from the paraxial focal point.
  • the distance that the focal points of the aberrated rays 215 extend along the optical axis of the lens 224 beyond the paraxial focal plane 226 is the longitudinal spherical aberration (LSA) range and the distance that the aberrated rays 215 extend along the paraxial focal plane 226 is the transverse spherical aberration (TSA) range.
  • LSA longitudinal spherical aberration
  • TSA transverse spherical aberration
  • Embodiments of the present disclosure thus use the imperfections of a focal lens in a way that is contrary to conventional wisdom.
  • lens systems used for laser scribing avoiding or correcting lens aberrations is often desirable to provide a well-focused beam spot.
  • lens aberrations are used intentionally to create an optical effect that extends DOF to scribe a workpiece with extended depth affectation.
  • the lenses used for laser scribing with extended depth affectation may be less expensive than the high NA lenses required for stealth scribing.
  • the focal lens 224 may include multi-element lenses, such as a lens doublet or lens triplet, which corrects aberrations within the diffraction-limited region 223 but not across the full aperture of the lens 224.
  • the focal lens 224 may also provide a relatively long working distance and low NA less than about 0.8 and more particularly less than about 0.5 or less than about 0.4.
  • Different substrate materials and thicknesses may have a different optimum parameter combination for scribing with extended depth affectation including wavelength, pulse duration, operating NA, longitudinal spherical aberration range, and defocus. Thus, the exact optical parameters of the lens will depend on the type of material to be scribed.
  • the focal lens 224 may be designed and/or illuminated to introduce a longitudinal spherical aberration range sufficient to extend the effective DOF with a limited transverse spherical aberration range.
  • the working or operating NA (or F#) of the lens 224 may be selected to achieve the longitudinal spherical aberration range that will provide the desired extended affectation within a workpiece 202 while limiting the transverse spherical aberration range such that the focused beam spot size on a surface 204 of the workpiece 202 is not too large.
  • the desired beam spot size on the surface 204 of the workpiece depends upon the particular application and may be less than about 20 ⁇ for scribing semiconductor wafers and die separation.
  • the working or operating NA of the lens 224 may be adjusted by expanding a raw laser beam 212 using a beam expander 222 to produce an expanded laser beam 214 that illuminates a variable portion of the clear aperture of the lens 224.
  • the expanded laser beam 214 only illuminates the aperture of the lens 224 within the diffraction- limited region 223, as shown in FIG. 3A
  • the focused beam 216 includes only paraxial rays that focus to the paraxial focal plane, which is shown on the surface 204 of the workpiece 202. This does not provided a longitudinal spherical aberration range that extends the effective DOF into the workpiece 202 to provide extended depth affectations.
  • the focused beam 216 also includes aberrated rays that focus beyond the paraxial focal plane with a longitudinal spherical aberration range extending the DOF 228 into the workpiece 202. Because longitudinal spherical aberration dominates when the lens is operating near but not quite diffraction limited, the transverse spherical aberration range of the aberrated rays of the focused beam 216 may be limited. Thus, the longitudinal spherical aberration range extends the DOF while still keeping the transverse spot size under control.
  • the focused beam 216 includes aberrated rays that further extend the transverse spherical aberration range and further increases the beam spot size on the surface 204 of the workpiece 202.
  • the increased transverse spherical aberration range may negate the effects of the extended DOF provided by the longitudinal spherical aberration.
  • the lens 224 may be illuminated with an operating NA such that the longitudinal spherical aberration range sufficiently extends the DOF into the workpiece to cause the desired extended depth affectation but with a limited transverse spherical aberration range.
  • the beam size may be gradually increased at the lens 224 (e.g., increasing the operating NA) until the optimum size is found to generate the extended depth affectation inside of the material of the workpiece 202.
  • Limiting the transverse spherical aberration range enables smaller beam spot sizes at the surface of the workpiece, smaller laser zones, and smaller ablation zones while still allowing a longitudinal spherical aberration range sufficient to extend the effective DOF.
  • the transverse spherical aberration range may be limited sufficiently to result in a laser zone of less than about 20 ⁇ and more specifically 10-20 ⁇ and an ablation zone less than about 10 ⁇ and more specifically about 5 ⁇ .
  • the optimum NA and pulse energy will depend on the material thickness.
  • a desired extended depth affectation depth may be achieved with an operating NA of about 0.15 to 0.2 and a pulse energy in a range of about 10 to 50 ⁇ .
  • a suitable spot size with a longitudinal spherical aberration range sufficient to achieve extended depth affectation in a material thickness of 90 ⁇ - 110 ⁇ may be achieved by illuminating about 8 mm of the 18 mm aperture of the 25 mm triplet.
  • a 25 mm focal length triplet lens may be operated at about 0.16 NA to achieve extended depth affectation to a desired depth.
  • the longitudinal aberration coefficient is about 0.0133 and the transverse aberration coefficient is about 0.0024 according to a Zemax analysis.
  • a desired extended depth affectation matching the thicker material may be achieved with a lower operating NA of about 0.05 to 0.1 and a higher pulse energy in a range of about 30 to 70 ⁇ .
  • a 60 mm focal length triplet may be operated at about 0.07 NA to achieve extended depth affectation to a desired depth.
  • the pulse energy may be higher or lower depending upon the pulse spacing to achieve a desired depth. For example, a lower pulse energy may be used with a shorter pulse spacing and a higher pulse energy may be needed with a longer pulse spacing.
  • an aperture may be placed ahead of the lens 224 to limit the maximum beam diameter 214 into the lens 224, thereby limiting the maximum NA.
  • a 25 mm focal length triplet lens with an ultrafast UV laser may achieve over 100 micron depth extended depth affectation.
  • silicon with a longer lens and IR laser with higher power a further depth of extended depth affectation may be achieved (e.g., 300 microns).
  • a focus offset of an aberrated focused laser beam 216 relative to a surface 204 of a workpiece 202 may also be selected or adjusted, for example, to vary an extended DOF 228 into the workpiece 202 and/or beam spot size and energy density at the surface 204 of the workpiece 202.
  • the focus offset may be selected, for example, to optimize a depth of the extended depth affectation into the workpiece 202 and to minimize surface damage or debris.
  • the extended depth affectation may thus have an adjustable depth control by adjusting the focus offset as well as other laser and optics parameters, such as laser pulse energy.
  • the focus offset may be adjusted, for example, by adjusting a position of the focal lens 224 relative to the workpiece 202.
  • FIG. 4A shows the aberrated focused laser beam 216 with paraxial rays focused at a surface 204 of the workpiece 202 without a focus offset, i.e., the paraxial focal plane 226 substantially coincides with the surface 204.
  • FIG. 4B shows the aberrated focused laser beam 216 with paraxial rays focused below the surface 204 of the workpiece 202 with a focus offset Sf between the surface 204 and the paraxial focal plane 226, thereby extending the effective DOF 228 further into the workpiece 202.
  • FIG. 4A shows the aberrated focused laser beam 216 with paraxial rays focused at a surface 204 of the workpiece 202 without a focus offset, i.e., the paraxial focal plane 226 substantially coincides with the surface 204.
  • FIG. 4B shows the aberrated focused laser beam 216 with paraxial rays focused below the surface 204 of the workpiece 202 with a focus offset Sf between the surface 204 and the paraxial focal plane 226, thereby extending the effective DOF
  • 4C shows the aberrated focused laser beam 216 with paraxial rays focused below the surface 204 of the workpiece 202 with a greater focus offset Sf between the surface 204 and the paraxial focal plane 226, thereby extending the effective DOF 228 even further into the workpiece 202.
  • the optimum focus offset may vary depending on the substrate material (e.g., refractive index at the scribing wavelength) and the substrate thickness and on the operating NA of the lens and resulting aberration coefficients for the conditions under which the lens is operating.
  • the focus offset may also depend on the type of process (e.g., front-side or backside).
  • an optimum focus offset may be in the 20 ⁇ to 40 ⁇ range for backside scribing.
  • FIGS. 5A-5D show the ray geometry of a focused laser beam using a 60 mm focal length triplet lens in 250 micron thick sapphire with different amounts of spherical aberration and different focus offsets in 20 micron increments.
  • FIGS. 6A-6D show the ray geometry of a focused laser beam using a 54 mm focal length doublet lens in 250 micron thick sapphire with different amounts of spherical aberration and different focus offsets in 15 micron increments.
  • FIGS. 7A-7D show the ray geometry of a focused laser beam using a 25 mm focal length triplet lens in 120 micron thick sapphire with different amounts of spherical aberration and different focus offsets in 10 micron increments.
  • a perfect lens would provide the paraxial ray geometry shown in FIGS. 5A, 6A and 7A.
  • a real lens with a diffraction- limited region consistent with embodiments described herein, introduces spherical aberrations as shown in FIGS. 5B-5D, 6B-6D, and 7B-7D.
  • FIGS. 5B, 6B, and 7B illustrate the ray geometry of aberrated rays provided by a real lens illuminated at full aperture with a uniform laser beam.
  • FIGS. 5C, 6C, and 7C illustrate the ray geometry of aberrated rays provided by a real lens illuminated at full aperture with a Gaussian laser beam.
  • FIGS. 5D, 6D and 7C illustrate the ray geometry of aberrated rays provided by a real lens illuminated at partial aperture with a Gaussian laser beam.
  • the transverse spherical aberration range is too large and the aberrated, focused beam blows up.
  • the aberrated, focused beam has a relatively tight focus with an extended effective DOF as compared to the paraxial or perfect lens (FIGS. 5A, 6A, and 7A).
  • a desired lens and NA combination for a particular substrate material and thickness results in nearly diffraction-limited transverse spot size but with a longitudinal spherical aberration range sufficient to extend the effective DOF to match material thickness.
  • lenses having a focal length of 25 mm, 54 mm, and 60 mm lenses with other focal lengths may also be used to provide the desired NA and spherical aberrations.
  • the focal length may be less than 25 mm or greater than 60 mm.
  • FIGS. 8 and 9 show photographs of a sapphire substrate 802 scribed by a series of laser pulses with extended depth affectation into the sapphire substrate 802.
  • Each laser pulse forms an ablation zone or hole 806 where the laser enters the sapphire substrate 802 with a laser zone 805 around the ablation hole 806 and an extended depth affectation channel 808 extending from the ablation hole 806 into the material of the substrate 802.
  • the substrate 802 may thus be separated along the scribe line formed by the series of ablation holes 806 and extended depth affectation channels 808.
  • the ablation holes 806 are about 5 microns wide with a 20 micron laser zone 805 and spacing of about 15 microns, and the extended depth affectation channels 808 extend about 100 microns into the 150 micron thick sapphire substrate 802.
  • the scribing with extended depth affectation thus allows scribe sites of less than 20 microns.
  • the smaller scribe sites e.g., as compared to stealth scribing
  • narrower streets e.g., ⁇ 25 microns
  • closer die spacing without significant damage and debris when scribing semiconductor wafers with LEDs.
  • the depth of the extended depth affectation channels 808 improves breaking along the scribe line even when the spacing between the scribe sites is larger.
  • the depth of the extended depth affectation channels 808 also allow scribing of thicker substrates without multiple passes of the laser at different focal points within the substrate, for example, as required by stealth scribing.
  • the spacing of the scribe sites allows faster scribing using a single pulse per scribe site, for example, as compared to overlapping pulses.
  • scribe site sizes, depths, and spacings may be achieved with different laser parameters, for example, by controlling pulse spacing and depth. Although a single pulse per site is possible, multiple pulses per scribe site may also be used to control depth, for example, by using multiple passes of the laser. Although the illustrated embodiment shows a spacing of about 15 microns and a depth of about 100 microns, the spacing may be controlled from overlapping to 20 microns or greater and the depth may be controlled from less than 100 microns to greater than 200 microns.
  • a pulse train may include, for example, a more frequent series of shallower pulses (e.g., 10 to 20 micron depth separated by 5 to 10 microns) with a deeper pulse (e.g., 50 to 100 microns) spaced less frequently (e.g., every 15 to 50 microns).
  • a series of deeper pulses may be spaced at longer distances with shallower pulses in between the deeper pulses to increase the breaking properties.
  • scribing with extended depth affectation and controllable depth and spacing may thus be particularly advantageous when producing LEDs where the effect of light propagation from the LED is more to the bottom or middle of the sapphire sidewalk Closer and deeper spacings may be used in cases where light loss is less of a concern, such as in silicon wafers.
  • a laser machining system 1000 includes an air bearing X-Y positioning stage 1030 that supports and positions a workpiece 1002 for scribing with extended depth affectation.
  • the laser machining system 1000 includes a laser beam delivery system 1020 mounted on one side (e.g., a top or front side) and an opposite side camera 1040 mounted on an opposite side (e.g., a bottom or back side).
  • At least a workpiece supporting portion 1034 of the positioning stage 1030 is configured to slide between an alignment position (FIG. 10A) with the opposite side camera 1040 facing the workpiece 1002 and a machining position (FIG. 10B) with the laser beam delivery system 1020 facing the workpiece 1002.
  • the laser beam delivery system 1020 is above a plane 1001 of a workpiece support surface on the supporting portion 1034 and the opposite side camera 1040 is below the plane 1001 of the workpiece support surface on the supporting portion 1034.
  • One example of the air bearing X-Y positioning stage is described in greater detail in U.S. Patent Application Serial No. 12/962,050, which is fully incorporated herein by reference.
  • the opposite side camera 1040 images a feature on a side 1005 of the workpiece 1002 facing the camera 1040 and generates image data representing that feature.
  • the image data generated by the opposite side camera 1040 may be used to position the workpiece 1002 such that the laser beam delivery system 1020 is aligned relative to the feature imaged on the opposite side 1005 of the workpiece 1002, for example, using machine vision systems and alignment techniques known to those skilled in the art.
  • the laser beam delivery system 1020 directs a focused laser beam 1016 (e.g., an aberrated, focused laser beam with an extended DOF) toward a side 1003 of the workpiece 1002 facing the beam delivery system 1020 and machines the workpiece 1002 using scribing with extended depth affectation as described above.
  • the laser machining system 1000 also includes a motion control system 1050 that controls the motion of the positioning stage 1030 during alignment and/or machining of the workpiece 1002.
  • the motion control system 1050 may generate alignment data from the image data generated by the opposite side camera 1040 and controls the motion of the positioning stage 1030 in response to the alignment data.
  • the laser beam delivery system 1020 may include lenses and other optical elements that modify and focus a raw laser beam generated by a laser, for example, as described above.
  • the laser (not shown) may be located, for example, on a platform of the laser machining system 1000 and the raw laser beam generated by the laser may be directed into the laser beam delivery system 1020.
  • the laser machining system 1000 may also include a front side camera 1044 to image the workpiece 1002 on the front side.
  • the front side camera 1044 may be mounted to the beam delivery system 1020 or other suitable location.
  • the front side camera 1044 may similarly be coupled to the motion control system 1050 such that the motion control system 1050 may use the image data generated from the front side camera 1044 to provide alignment.
  • the laser machining system 1000 may thus allow alignment from the back side opposite the laser beam or from the front side or same side as the laser beam.
  • the opposite side camera 1040 and front side camera 1044 may be high resolution cameras known to those skilled in the art for alignment of semiconductor wafers in laser machining applications.
  • the laser machining system 1000 may thus be used to align the beam delivery system 1020 and focused laser beam 1016 with streets between dies on a semiconductor wafer.
  • the X-Y positioning stage 1030 may move the workpiece 1002 to scan the laser beam across the workpiece 1002 such that a series of pulses scribe the workpiece 1002, for example, along a street between dies on a wafer or along a side of the wafer opposite the street.
  • the X-Y positioning stage 1030 may then move the workpiece to index to another street for scribing.
  • the alignment process may be repeated as need for scribing within or along other streets.
  • opposite side alignment may be used to facilitate back side scribing of a semiconductor wafer 1101 to separate a plurality of semiconductor dies (e.g., LEDs).
  • the semiconductor wafer 1101 may include a substrate 1102 (e.g., sapphire) and one or more layers of semiconductor material (e.g., GaN) formed into sections 1109 separated by streets 1107.
  • the side of the semiconductor wafer 1101 with the sections 1109 is referred to as the front side 1103 and the opposite side is referred to as the back side 1105.
  • the substrate 1102 may also have one or more layers 1104 (e.g., metal) on the back side 1105 opposite the sections 1109.
  • a laser machining system such as those described above, may be used to scribe the semiconductor wafer 1101 along the streets 1107 between the die sections 1109 to separate the semiconductor wafer 1101 into individual dies.
  • the semiconductor wafer 1101 is thus aligned such that a laser beam 1116 is directed at the semiconductor wafer 1101 between the streets 1107, thereby providing registration of the die sections 1109 with the laser beam 1116.
  • the semiconductor wafer 1101 may be scribed by forming a series of ablation zones 1106 with extended depth affectation 1108. Scribing with extended depth affectation and ablation is particularly advantageous when the layer 1104 is opaque because the ablation removes the layer 1104 and allows the laser beam 1116 to pass into the substrate 1102.
  • a first pass of a laser may be used to ablate and remove the layer 1104 and a second pass of a laser provides the extended depth affectation.
  • the semiconductor wafer 1101 may be positioned such that the die sections 1109 on the front side
  • the opposite side camera 1140 may thus be used to view the streets 1107 between the sections 1109 and to provide alignment of the streets 1107 relative to a location of the laser beam 1116. Alignment using the opposite side camera 1140 is particularly advantageous when the back side layer(s) 1104 are opaque (e.g., metal) and prevent alignment from the machining side. To provide such alignment, the wafer 1101 is positioned along the Y axis relative to the laser beam delivery system (not shown) such that the scribe formed by the laser beam 1116 on the back side 1105 of the wafer 1101 is located within the width of the street 1107 on the front side 1103.
  • opposite side alignment may be used to facilitate dual side scribing.
  • dual side scribing involves forming relatively shallow scribes on both sides of a workpiece with one of the scribes substantially aligned relative to the other of the scribes. Forming shallow scribes minimizes or avoids damage that may be caused by deeper scribes while having scribes on both sides may improve breaking yields because cracks are more likely to propagate between the scribes.
  • a semiconductor wafer 1201 may first be positioned (e.g., on the workpiece support) with a back side 1205 facing a laser beam delivery system (not shown) and a front side 1203 facing an opposite side camera 1240 (FIG. 4A). With the wafer 1201 in this position, the opposite side camera 1240 may be used to image one of the streets 1207 between the sections 1209 so that the wafer 1201 can be positioned such that the laser beam 1216 on the back side 1205 is aligned with the street 1207 on the front side 1203. When the semiconductor wafer 1201 has been aligned, the laser beam 1216 may be used to scribe the back side 1205 forming a relatively shallow back side scribe 1206a (e.g., 20 microns or less).
  • a relatively shallow back side scribe 1206a e.g. 20 microns or less.
  • the semiconductor wafer 1201 may then be flipped such that the front side 1203 faces the laser beam delivery system and the back side 1205 faces the opposite side camera 1240 (FIG. 4B). With the wafer 1201 in this position, the opposite side camera 1240 may be used to image the back side scribe 1206a so that the wafer 1201 can be positioned such that the laser beam 1216 is aligned with the back side scribe 1206a. When the semiconductor wafer 1201 has been aligned, the laser beam 1216 may be used to scribe the front side 1203 in the street 1207 between the sections 1209 to form a front side scribe 1206b substantially aligned with the back side scribe 1206a.
  • the front side scribe 1206b may include a series of ablation zones with extended depth affectation 1208, for example, as described above.
  • a machining side camera 1244 may image the street 1207 to provide alignment of the laser beam 1216 with the street 1207.
  • the wafer 1201 may then be separated into individual dies by breaking along the locations of the scribes 1206a, 1206b such that cracks propagate between the scribes 1206a, 1206b facilitated by the extended depth affectation 1208.
  • the sections 1209 correspond to LEDs, for example, the front side scribe 1206b better defines the edge of the LED such that the LED is more uniform and breakage yields are improved (e.g., as compared to shallow scribes on one side only).
  • the LED light and electrical properties are less likely to be adversely affected because the scribes 1206a, 1206b are not deep enough to cause significant thermal damage.
  • the front side scribe 1206b with extended depth affectation 1208 may be formed first on the front side 1203 (e.g., using the machining side camera 1244 to provide alignment relative to the streets 1207).
  • the wafer 1201 may then be flipped and the back side scribe 1206a may be formed on the back side 1205 (e.g., using the opposite side camera 1240 to provide alignment relative to the front side scribe 1206b and/or streets 1207).
  • One of the scribes may be shallower than the other scribe.
  • the shallower scribe e.g., 20 microns or less
  • the back side scribe 1206a may be formed with the extended depth affectation 1208.
  • the laser machining system 1300 may include an ultrafast laser 1310 capable of emitting ultrashort pulses (e.g., less than 1 ns) at a wavelength capable of passing at least partially through the material and a beam delivery system 1320 capable of providing a well-focused line beam 1316.
  • an ultrafast laser 1310 capable of emitting ultrashort pulses (e.g., less than 1 ns) at a wavelength capable of passing at least partially through the material
  • a beam delivery system 1320 capable of providing a well-focused line beam 1316.
  • One embodiment of the beam delivery system 1320 includes a beam expander 1322 for expanding the raw laser beam 1321 from the ultrafast laser 1310 to form an expanded beam 1323, a beam shaper 1326 for shaping the expanded beam 1323 to form an elliptical shaped beam 1325, and a focusing lens 1324 for focusing the elliptical shaped beam 1325 to provide the well-focused line beam 1316 that forms a line beam spot on the workpiece 1302 and has an extended DOF within the workpiece 1302.
  • the beam delivery system 1320 may also include one or more reflectors 1328 to reflect and redirect the laser beam as needed.
  • extended depth affectation scribing involves laser ablating material on the surface 1304 of the workpiece 1302 in an ablation zone 1306 and using a waveguide self-focusing effect to direct the laser beam 1316 from the ablation zone 1306 to an internal location 1308 extending within the workpiece 1302 where crystal damage is caused due to shock, electric fields and/or pressure.
  • the focusing lens 1324 may introduce spherical aberrations as described above with a longitudinal spherical aberration range sufficient to extend the effective DOF into the workpiece 1302.
  • the beam delivery system 1320 may include beam shaping optics capable of forming a variable elongated astigmatic focal beam spot, for example, as described in greater detail in U.S. Patent No. 7,388,172, which is fully incorporated herein by reference.
  • the elongated astigmatic focal beam spot has a length in the astigmatic axis that is longer than a width in the focused axis.
  • Such a beam delivery system is capable of controlling the energy density of the variable astigmatic focal beam spot as the length of the spot is varied.
  • the beam shaper 1326 may include, for example, an anamorphic lens system including a cylindrical plano-concave lens 1326a and a cylindrical plano-convex lens 1326b such that varying a distance between these lenses varies the length of the beam spot and the energy density on the workpiece.
  • the laser machining system 1300 may further modify the beam to improve the quality of the scribe depending upon the application. To avoid epi layer delamination issues in certain applications (e.g., back side scribing), for example, the laser machining system 1300 may provide spatial filtering at the edges of the beam to clean up the point spread function in the narrow direction of the beam.
  • the beam shaper 1326 may thus be used to vary the energy density of the beam spot on the workpiece 1302 to optimize the fluence and coupling efficiency for a particular material or scribing operation.
  • the energy density of the beam spot may be adjusted higher to optimize scribing of the bare sapphire (i.e., back side scribing) and may be adjusted lower to optimize scribing of the GaN coated sapphire (i.e., front side scribing).
  • one side of the workpiece may be scribed with the laser beam spot optimized for that side, the workpiece may be flipped, and the other side may be scribed with the laser beam spot optimized for that side.
  • the beam shaper 1326 thus avoids having to adjust the laser power to change the energy density and optimize the fluence.
  • a nonlinear optical crystal such as BBO crystal or beta- BaB 2 04
  • BBO crystals are known for use with a laser as a frequency-doubling crystal. Because the BBO crystal provides more walk-off than other crystals (e.g., CLBO), a substantially circular beam entering the crystal may become an elliptical beam upon exiting the crystal. Although the walk-off may not be desirable in many applications, this characteristic of the BBO crystal provides a unique advantage in an application where an elliptical shaped beam is desired.
  • scribing with extended depth affectation provide several advantages over conventional ablation scribing and stealth scribing techniques.
  • scribing with extended depth affectation enables scribing a workpiece, such as a sapphire substrate of a semiconductor wafer, with minimal or significantly reduced heat and debris.
  • LEDs may be produced with low electrical damage and light loss and without requiring additional coating and cleaning processes.
  • Scribing with extended depth affectation also facilitates scribing of thicker workpieces and workpieces with opaque coatings or films.
  • Scribing with extended depth affectation also avoids having to use complex and expensive high NA lens and focusing systems in conventional stealth scribing systems. Scribing with extended depth affectation, as described herein, may be accomplished in various types of materials by adjusting processing parameters such as wavelength, pulse duration, pulse energy, and optics.
  • a method of laser scribing a workpiece includes: generating a laser beam with ultrashort pulses having a pulse duration of less than 1 ns; and focusing the laser beam such that an energy density is sufficient to ablate a surface of the substrate at an ablation zone and to change an index of refraction in the workpiece, wherein the beam passes through the ablation zone to an internal location within the workpiece using a waveguide self-focusing effect to cause crystal damage to material of the workpiece at the internal location.
  • a method of laser scribing a workpiece includes: generating a laser beam having a wavelength, a pulse duration, and a pulse energy sufficient to provide nonlinear multiphoton absorption within material of the workpiece; focusing the laser beam using a lens that introduces spherical aberrations with a longitudinal spherical aberration range sufficient to provide an extended depth of field (DOF) within the workpiece such that a single pulse of the laser beam causes an extended depth affectation within the workpiece; and scanning the workpiece with the laser beam such that a series of extended depth affectations are caused by a series of pulses at a series of locations along the workpiece.
  • DOE extended depth of field
  • a laser machining system includes a laser for generating a laser beam having a wavelength, a pulse duration, and a pulse energy sufficient to provide nonlinear multiphoton absorption within material of the workpiece and a beam delivery system for focusing the laser beam and directing the laser beam toward a workpiece.
  • the beam delivery system includes a beam expander for expanding the laser beam and a lens that introduces spherical aberrations with a longitudinal spherical aberration range sufficient to provide an extended depth of field (DOF) within the workpiece such that a single pulse of the laser beam causes an extended affectation within the workpiece.
  • the laser machining system further includes a workpiece positioning stage for moving the workpiece to scan the laser beam across the workpiece such that a series of pulses form a series of extended affectations within the workpiece.

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Abstract

La présente invention se rapporte à des systèmes et à des procédés permettant un traçage par laser pour simuler une profondeur étendue dans un substrat ou une pièce à travailler en dirigeant un faisceau laser de telle sorte que le faisceau passe dans la pièce à travailler à l'aide d'un effet d'auto-focalisation du guide d'ondes pour causer des dégâts aux cristaux internes le long d'un canal qui s'étend dans la pièce à travailler. Différents effets optiques peuvent être utilisés pour faciliter l'effet d'auto-focalisation du guide d'ondes, tels que l'absorption multi-photonique dans le matériau de la pièce à travailler, la transparence du matériau de la pièce à travailler et les aberrations du faisceau laser dirigé. Le faisceau laser peut présenter une longueur d'onde, une durée d'impulsion et une énergie d'impulsion, par exemple, pour permettre une transmission à travers le matériau et une absorption multi-photonique dans le matériau. Un faisceau laser dirigé et aberrant peut également être utilisé pour fournir une plage d'aberration sphérique longitudinale qui est suffisante pour étendre la profondeur de champ (DOF pour Depth Of Field) effective dans la pièce à travailler.
PCT/US2013/032781 2012-03-16 2013-03-18 Traçage par laser permettant de simuler une profondeur étendue dans une pièce à travailler WO2013138802A1 (fr)

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JP2015500676A JP2015519722A (ja) 2012-03-16 2013-03-18 工作物中への高深度作用を伴うレーザスクライビング加工
EP13760572.1A EP2825344A4 (fr) 2012-03-16 2013-03-18 Traçage par laser permettant de simuler une profondeur étendue dans une pièce à travailler
KR1020147028951A KR20140137437A (ko) 2012-03-16 2013-03-18 연장된 깊이 가식을 이용한 가공소재 레이저 스크라이빙
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Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015069143A1 (fr) * 2013-11-07 2015-05-14 ОБЩЕСТВО С ОГРАНИЧЕННОЙ ОТВЕТСТВЕННОСТЬЮ "ОПТОСИСТЕМЫ" (ООО "Оптосистемы") Procédé et dispositif de formation d'ouvertures de précision dans un film optiquement transparent par impulsion ultracourte de rayonnement laser
US20150140241A1 (en) * 2013-11-19 2015-05-21 Rofin-Sinar Technologies Inc. Method and apparatus for spiral cutting a glass tube using filamentation by burst ultrafast laser pulses
WO2016007843A1 (fr) * 2014-07-11 2016-01-14 Corning Incorporated Systèmes et procédés de découpe de verre par induction de perforations par laser pulsé dans des articles en verre
WO2016010947A1 (fr) * 2014-07-14 2016-01-21 Corning Incorporated Procédés et appareils pour fabriquer des articles en verre
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US9701563B2 (en) 2013-12-17 2017-07-11 Corning Incorporated Laser cut composite glass article and method of cutting
US9793421B2 (en) 2014-12-05 2017-10-17 Solarcity Corporation Systems, methods and apparatus for precision automation of manufacturing solar panels
US9815730B2 (en) 2013-12-17 2017-11-14 Corning Incorporated Processing 3D shaped transparent brittle substrate
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US9850159B2 (en) 2012-11-20 2017-12-26 Corning Incorporated High speed laser processing of transparent materials
US10047001B2 (en) 2014-12-04 2018-08-14 Corning Incorporated Glass cutting systems and methods using non-diffracting laser beams
US10173916B2 (en) 2013-12-17 2019-01-08 Corning Incorporated Edge chamfering by mechanically processing laser cut glass
US10233112B2 (en) 2013-12-17 2019-03-19 Corning Incorporated Laser processing of slots and holes
US10280108B2 (en) 2013-03-21 2019-05-07 Corning Laser Technologies GmbH Device and method for cutting out contours from planar substrates by means of laser
US10335902B2 (en) 2014-07-14 2019-07-02 Corning Incorporated Method and system for arresting crack propagation
US10377658B2 (en) 2016-07-29 2019-08-13 Corning Incorporated Apparatuses and methods for laser processing
WO2019158488A1 (fr) * 2018-02-15 2019-08-22 Schott Ag Procédé et dispositif pour insérer une ligne de séparation dans un matériau transparent cassant, ainsi qu'élément pourvu d'une ligne de séparation, pouvant être fabriqué selon le procédé
US10421683B2 (en) 2013-01-15 2019-09-24 Corning Laser Technologies GmbH Method and device for the laser-based machining of sheet-like substrates
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US10626040B2 (en) 2017-06-15 2020-04-21 Corning Incorporated Articles capable of individual singulation
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US10688599B2 (en) 2017-02-09 2020-06-23 Corning Incorporated Apparatus and methods for laser processing transparent workpieces using phase shifted focal lines
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US11186060B2 (en) 2015-07-10 2021-11-30 Corning Incorporated Methods of continuous fabrication of holes in flexible substrate sheets and products relating to the same
DE102021100675A1 (de) 2021-01-14 2022-07-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zum Zerteilen eines transparenten Werkstücks
US11542190B2 (en) 2016-10-24 2023-01-03 Corning Incorporated Substrate processing station for laser-based machining of sheet-like glass substrates
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11648623B2 (en) 2014-07-14 2023-05-16 Corning Incorporated Systems and methods for processing transparent materials using adjustable laser beam focal lines
US11774233B2 (en) 2016-06-29 2023-10-03 Corning Incorporated Method and system for measuring geometric parameters of through holes
US11773004B2 (en) 2015-03-24 2023-10-03 Corning Incorporated Laser cutting and processing of display glass compositions

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014161534A2 (fr) 2013-04-04 2014-10-09 Lpkf Laser & Electronics Ag Procédé et dispositif permettant de pratiquer des perforations dans un substrat et substrat produit avec ledit procédé et ledit dispositif
CN106392334B (zh) * 2015-07-29 2020-01-07 大族激光科技产业集团股份有限公司 一种透明硬脆材料激光贯穿切割装置以及切割方法
CN108367387B (zh) * 2015-12-22 2021-12-07 贺利氏德国有限责任两合公司 使用皮秒激光生产金属陶瓷基材的方法
JP6369454B2 (ja) * 2015-12-24 2018-08-08 トヨタ自動車株式会社 レーザー溶接装置
CN106425112B (zh) * 2016-11-02 2018-11-06 国神光电科技（上海）有限公司 一种激光划片的方法及系统
KR102596305B1 (ko) * 2017-11-20 2023-10-30 아이피지 포토닉스 코포레이션 재료의 가공을 위한 시스템 및 방법 레이저
CN107945136B (zh) * 2017-12-04 2021-09-24 深圳市路畅科技股份有限公司 一种鱼眼图像矫正方法、系统、设备及计算机存储介质
US11850679B2 (en) 2017-12-29 2023-12-26 Corelase Oy Laser processing apparatus and method
CN111151895A (zh) * 2020-01-13 2020-05-15 大族激光科技产业集团股份有限公司 一种利用成丝效应切割透明材料的工艺及系统
CN111215768B (zh) * 2020-01-16 2021-03-30 吉林大学 利用反球差校正进行纵向加工的方法及应用
TWI794589B (zh) * 2020-02-21 2023-03-01 海納光電股份有限公司 硬脆板材高溫環境加工裝置及方法
CN113732511B (zh) * 2021-08-30 2023-01-06 中国科学院西安光学精密机械研究所 光纤表面包层微纳结构飞秒激光加工方法及装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6133986A (en) * 1996-02-28 2000-10-17 Johnson; Kenneth C. Microlens scanner for microlithography and wide-field confocal microscopy
US20080296263A1 (en) * 2002-02-25 2008-12-04 Board Of Regents Of University Of Nebraska Laser scribing and machining of materials
US20100015783A1 (en) * 2002-03-12 2010-01-21 Hamamatsu Photonics K.K. Method of cutting an object to be processed
US20110132885A1 (en) * 2009-12-07 2011-06-09 J.P. Sercel Associates, Inc. Laser machining and scribing systems and methods

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967884A (en) * 1974-11-05 1976-07-06 Eastman Kodak Company Three element objective lens
JPH07117647B2 (ja) * 1992-05-25 1995-12-18 シーメンス アクチエンゲゼルシヤフト 走査対物レンズ
FR2855084A1 (fr) * 2003-05-22 2004-11-26 Air Liquide Optique de focalisation pour le coupage laser
JP4917257B2 (ja) * 2004-11-12 2012-04-18 浜松ホトニクス株式会社 レーザ加工方法
DE102006042280A1 (de) * 2005-09-08 2007-06-06 IMRA America, Inc., Ann Arbor Bearbeitung von transparentem Material mit einem Ultrakurzpuls-Laser
JP4813985B2 (ja) * 2006-06-23 2011-11-09 株式会社ディスコ ウエーハの加工条件設定方法
WO2008069099A1 (fr) * 2006-11-30 2008-06-12 Sumitomo Electric Industries, Ltd. Système optique de condensation de lumière, procédé et appareil de traitement laser, et procédé de fabrication de matériau fragile
JP4402708B2 (ja) * 2007-08-03 2010-01-20 浜松ホトニクス株式会社 レーザ加工方法、レーザ加工装置及びその製造方法
JP2010050175A (ja) * 2008-08-20 2010-03-04 Disco Abrasive Syst Ltd レーザー加工方法及びレーザー加工装置
JP2010158686A (ja) * 2009-01-06 2010-07-22 Disco Abrasive Syst Ltd レーザ加工用光学装置、レーザ加工装置およびレーザ加工方法
JP5241525B2 (ja) * 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
JP5452247B2 (ja) * 2010-01-21 2014-03-26 東芝機械株式会社 レーザダイシング装置
JP5614739B2 (ja) * 2010-02-18 2014-10-29 国立大学法人埼玉大学 基板内部加工装置および基板内部加工方法
CN102230983A (zh) * 2011-06-17 2011-11-02 山西飞虹激光科技有限公司 用于激光加工的光学元件及激光加工设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6133986A (en) * 1996-02-28 2000-10-17 Johnson; Kenneth C. Microlens scanner for microlithography and wide-field confocal microscopy
US20080296263A1 (en) * 2002-02-25 2008-12-04 Board Of Regents Of University Of Nebraska Laser scribing and machining of materials
US20100015783A1 (en) * 2002-03-12 2010-01-21 Hamamatsu Photonics K.K. Method of cutting an object to be processed
US20110132885A1 (en) * 2009-12-07 2011-06-09 J.P. Sercel Associates, Inc. Laser machining and scribing systems and methods

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2825344A4 *

Cited By (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9850159B2 (en) 2012-11-20 2017-12-26 Corning Incorporated High speed laser processing of transparent materials
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US11345625B2 (en) 2013-01-15 2022-05-31 Corning Laser Technologies GmbH Method and device for the laser-based machining of sheet-like substrates
US11028003B2 (en) 2013-01-15 2021-06-08 Corning Laser Technologies GmbH Method and device for laser-based machining of flat substrates
US10421683B2 (en) 2013-01-15 2019-09-24 Corning Laser Technologies GmbH Method and device for the laser-based machining of sheet-like substrates
US11713271B2 (en) 2013-03-21 2023-08-01 Corning Laser Technologies GmbH Device and method for cutting out contours from planar substrates by means of laser
US10280108B2 (en) 2013-03-21 2019-05-07 Corning Laser Technologies GmbH Device and method for cutting out contours from planar substrates by means of laser
RU2551043C1 (ru) * 2013-11-07 2015-05-20 Общество С Ограниченной Ответственностью "Оптосистемы" Способ и устройство формирования прецизионных отверстий в оптически прозрачной пленке сверхкоротким импульсом лазерного излучения
WO2015069143A1 (fr) * 2013-11-07 2015-05-14 ОБЩЕСТВО С ОГРАНИЧЕННОЙ ОТВЕТСТВЕННОСТЬЮ "ОПТОСИСТЕМЫ" (ООО "Оптосистемы") Procédé et dispositif de formation d'ouvertures de précision dans un film optiquement transparent par impulsion ultracourte de rayonnement laser
US20150140241A1 (en) * 2013-11-19 2015-05-21 Rofin-Sinar Technologies Inc. Method and apparatus for spiral cutting a glass tube using filamentation by burst ultrafast laser pulses
US10005152B2 (en) * 2013-11-19 2018-06-26 Rofin-Sinar Technologies Llc Method and apparatus for spiral cutting a glass tube using filamentation by burst ultrafast laser pulses
US10442719B2 (en) 2013-12-17 2019-10-15 Corning Incorporated Edge chamfering methods
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US11780033B2 (en) 2014-11-19 2023-10-10 Trumpf Laser- Und Systemtechnik Gmbh System for asymmetric optical beam shaping
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US10252931B2 (en) 2015-01-12 2019-04-09 Corning Incorporated Laser cutting of thermally tempered substrates
WO2016115017A1 (fr) * 2015-01-12 2016-07-21 Corning Incorporated Découpage au laser de substrats trempés thermiquement à l'aide du procédé d'absorption multiphotonique
US11773004B2 (en) 2015-03-24 2023-10-03 Corning Incorporated Laser cutting and processing of display glass compositions
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US11186060B2 (en) 2015-07-10 2021-11-30 Corning Incorporated Methods of continuous fabrication of holes in flexible substrate sheets and products relating to the same
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US11111170B2 (en) 2016-05-06 2021-09-07 Corning Incorporated Laser cutting and removal of contoured shapes from transparent substrates
US11114309B2 (en) 2016-06-01 2021-09-07 Corning Incorporated Articles and methods of forming vias in substrates
US10981251B2 (en) 2016-06-08 2021-04-20 Han's Laser Technology Industry Group Co., Ltd Method and device for cutting sapphire
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US11774233B2 (en) 2016-06-29 2023-10-03 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10377658B2 (en) 2016-07-29 2019-08-13 Corning Incorporated Apparatuses and methods for laser processing
US10522963B2 (en) 2016-08-30 2019-12-31 Corning Incorporated Laser cutting of materials with intensity mapping optical system
US11130701B2 (en) 2016-09-30 2021-09-28 Corning Incorporated Apparatuses and methods for laser processing transparent workpieces using non-axisymmetric beam spots
US10730783B2 (en) 2016-09-30 2020-08-04 Corning Incorporated Apparatuses and methods for laser processing transparent workpieces using non-axisymmetric beam spots
US11542190B2 (en) 2016-10-24 2023-01-03 Corning Incorporated Substrate processing station for laser-based machining of sheet-like glass substrates
US10752534B2 (en) 2016-11-01 2020-08-25 Corning Incorporated Apparatuses and methods for laser processing laminate workpiece stacks
US10688599B2 (en) 2017-02-09 2020-06-23 Corning Incorporated Apparatus and methods for laser processing transparent workpieces using phase shifted focal lines
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US11972993B2 (en) 2017-05-25 2024-04-30 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US11062986B2 (en) 2017-05-25 2021-07-13 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US10626040B2 (en) 2017-06-15 2020-04-21 Corning Incorporated Articles capable of individual singulation
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US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
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JP2015519722A (ja) 2015-07-09
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KR20140137437A (ko) 2014-12-02
EP2825344A4 (fr) 2016-02-17
EP2825344A1 (fr) 2015-01-21

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