WO2013136433A1 - Cellule solaire - Google Patents
Cellule solaire Download PDFInfo
- Publication number
- WO2013136433A1 WO2013136433A1 PCT/JP2012/056387 JP2012056387W WO2013136433A1 WO 2013136433 A1 WO2013136433 A1 WO 2013136433A1 JP 2012056387 W JP2012056387 W JP 2012056387W WO 2013136433 A1 WO2013136433 A1 WO 2013136433A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- finger
- solar cell
- line width
- fingers
- change
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 description 23
- 239000000758 substrate Substances 0.000 description 14
- 238000013459 approach Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 238000012887 quadratic function Methods 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a solar cell.
- Patent Document 1 discloses a solar cell including a collector electrode composed of a bus bar and fingers provided on a substrate.
- the finger has a first end and a second end.
- the first end is a portion of the finger that is connected to the bus bar.
- the second end is the part of the finger that is farthest from the bus bar.
- the finger extends linearly from the first end to the second end, and the line width is monotonously thin.
- the current collected by the fingers increases as it approaches the bus bar.
- the aforementioned fingers are not optimized to sufficiently reduce power loss due to current and finger resistance.
- a solar cell according to the present invention includes a photoelectric conversion unit and a collector electrode provided on a main surface of the photoelectric conversion unit, and the collector electrode includes a bus bar and a finger that intersects with the bus bar.
- the first finger is maintained while maintaining the line width at the boundary between the first finger portion and the first finger portion, which is extended so that the line width becomes narrower as it moves away from the side, and the change rate of the line width changes in multiple steps.
- a second finger portion extending continuously from the portion.
- the output of the solar cell can be improved.
- FIG. 2 is a cross-sectional view taken along line AA in FIG.
- FIG. 3 is a sectional view taken along line BB in FIG. It is a figure which shows the screen plate used when manufacturing the solar cell which concerns on embodiment.
- It is a top view by the side of the light-receiving surface of the 1st modification of the solar cell which concerns on embodiment.
- It is a top view by the side of the light-receiving surface of the 2nd modification of the solar cell which concerns on embodiment.
- It is sectional drawing of the modification of the photoelectric conversion part of the solar cell which concerns on embodiment.
- It is a top view of the modification of the collector electrode in the back surface side of the solar cell which concerns on embodiment.
- FIG. 1 is a plan view of the light-receiving surface side of the solar cell 1.
- 2 is a cross-sectional view taken along line AA in FIG.
- the “light-receiving surface” means a main surface on the side on which sunlight is mainly incident.
- the “back surface” means a main surface opposite to the light receiving surface.
- the solar cell 1 includes a photoelectric conversion unit 2, a collector electrode 4 provided on the light receiving surface of the photoelectric conversion unit 2, and a collector electrode 6 provided on the back surface of the photoelectric conversion unit 2.
- a part such as a layer, a film, or a region
- another part includes not only a case where the part is directly stacked, but also a case where another part exists between them.
- the photoelectric conversion unit 2 includes a transparent conductive film 11, a p-type amorphous silicon film 12, an i-type amorphous silicon film 13, an n-type single crystal silicon substrate 14, and an i-type amorphous material from the light receiving surface side.
- the n-type single crystal silicon substrate 14 is a power generation layer that receives light and generates carriers.
- the power generation layer is not limited to the n-type single crystal silicon substrate 14.
- the power generation layer may be either n-type or p-type conductivity type.
- the power generation layer may be any of a crystalline semiconductor substrate, a polycrystalline silicon substrate, a gallium arsenide (GaAs) substrate, and an indium phosphide (InP) substrate.
- the i-type amorphous silicon film 13 is formed on the light-receiving surface of the n-type single crystal silicon substrate 14.
- the i-type amorphous silicon film 13 is an intrinsic amorphous silicon film.
- the p-type amorphous silicon film 12 is formed on the i-type amorphous silicon film 13.
- the p-type amorphous silicon film 12 is an amorphous silicon film doped with p-type impurities.
- the transparent conductive film 11 is formed on the p-type amorphous silicon film 12.
- the transparent conductive film 11 includes at least one of metal oxides such as indium oxide (In 2 O 3 ), zinc oxide (ZnO), tin oxide (SnO 2 ), and titanium oxide (TiO 2 ). .
- the i-type amorphous silicon film 15 is formed on the back surface of the n-type single crystal silicon substrate 14.
- the i-type amorphous silicon film 15 is an intrinsic amorphous silicon film.
- the n-type amorphous silicon film 16 is formed on the i-type amorphous silicon film 15.
- the n-type amorphous silicon film 16 is an amorphous silicon film doped with n-type impurities.
- the transparent conductive film 17 is formed on the n-type amorphous silicon film 16.
- the transparent conductive film 17 includes the same material as that of the transparent conductive film 11.
- the collecting electrode 4 is formed on the transparent conductive film 11.
- the collector electrode 4 is a conductive material, for example, a metal such as silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), nickel (Ni) and chromium (Cr), or these metals. It can comprise with the alloy containing 1 or more types of these.
- the collector electrode 4 includes bus bars 19a and 19b and fingers 20a to 20d.
- the bus bars 19a and 19b are provided to take out the carriers generated in the photoelectric conversion unit 2.
- the bus bars 19a and 19b are arranged in parallel with a predetermined interval so as to collect the current collected by the fingers 20a to 20d as evenly as possible.
- the bus bar 19a is arranged at the center of the left half when the main surface of the photoelectric conversion unit 2 is divided into two, and the bus bar 19b is arranged at the center of the right half.
- the width of the bus bars 19a and 19b is 1 mm.
- the fingers 20a to 20d are provided to collect carriers generated in the photoelectric conversion unit 2.
- the fingers 20a to 20d are arranged so as to cross the bus bars 19a and 19b and be electrically connected.
- the fingers 20a to 20d are arranged in parallel at predetermined intervals so that current can be collected evenly from the surface of the photoelectric conversion unit 2.
- the n sets of fingers 20a to 20d divide the area of the main surface of the photoelectric conversion unit 2 into (n + 1) equal parts. Placed in.
- the plurality of fingers 20a are arranged in parallel with each other at an interval of 2 mm, for example.
- the collector electrode 6 may have the same configuration as that of the collector electrode 4, or may include a configuration that is partially different in terms of width, material, or shape.
- the finger 20 a has a line width that changes along its extending direction, and includes a first finger portion 203 and a second finger portion 204.
- the line width here means the length in the short direction of the fingers 20a to 20d when the fingers 20a to 20d are viewed from above.
- the first finger portion 203 is divided into multiple stages so that the change rate of the line width changes, and is extended so that the line width gradually decreases as the distance from the bus bar 19a side increases.
- the first finger 203 is connected to the bus bar 19a at the end 201.
- the end part 201 is the widest part in the first finger part 203.
- the boundary portion 202 is a portion having the narrowest width in the first finger portion 203.
- the first finger portion 203 has a first region 203a in which the line width Y is reduced at a multi-stage change rate and the line width Y is reduced at a change rate of ⁇ Y 1 / ⁇ X 1, and a change rate of ⁇ Y 2 / ⁇ X 2.
- the first finger portion 203 has a line width that becomes narrower from the end 201 at a change rate ⁇ Y 1 / ⁇ X 1, and a change rate ⁇ Y 2 / ⁇ X 2 that is a change rate different from the change rate ⁇ Y 1 / ⁇ X 1 on the way.
- the line width becomes narrower.
- the change rate ⁇ Y 2 / ⁇ X 2 is smaller than the change rate ⁇ Y 1 / ⁇ X 1 .
- the rate of change in line width of the first finger portion 203 increases as it approaches the bus bar 19a side.
- the second finger portion 204 extends continuously from the boundary portion 202 with the first finger portion 203 and extends in the longitudinal direction of the finger 20a while maintaining the line width at the line width of the boundary portion 202 of the first finger portion 203. Is done. That is, the distance X 3 from the end portion 201, a distance when the X 3 is a line width Y 3 of the second finger portions 204, per unit change amount of the distance X 3 along the extending direction of the second finger portion 204 the rate of change [Delta] Y 3 / [Delta] X 3 showing the rate of change [Delta] Y 3 line width is zero.
- the line widths of the boundary part 202 and the second finger part 204 of the first finger part 203 are not less than a rubbing prevention line width that does not cause printing rubbing when screen printing is performed.
- the printing rubbing referred to here is a printing defect such as a part missing when the finger 20a is formed.
- the length of the second finger portion 204 of the finger 20a is shorter than the length of the first finger portion 203 of the finger 20a.
- the fingers 20b, 20c, and 20d also include a first finger portion 203 including an end portion 201 and a boundary portion 202, and a second finger portion 204.
- the fingers 20b and 20c include a connecting portion 205 to which the second finger portion 204 of the finger 20b and the second finger portion 204 of the finger 20c are connected.
- the length of the finger 20b extending from the connecting portion 205 toward the bus bar 19a is the same as the length of the finger 20c extending from the connecting portion 205 toward the bus bar 19b.
- the finger 20d includes a first finger portion 203 including an end portion 201 and a boundary portion 202, and a second finger portion 204, and extends in a direction opposite to the finger 20a.
- FIG. 3 is a cross-sectional view taken along the line BB of FIG. 1 and shows a cross-sectional view of the finger 20a.
- the thickness of the first finger portion 203 is thickest at the end portion 201 having a large line width, continuously thins toward the boundary portion 202, and thinnest at the boundary portion 202.
- the change ⁇ Z of the thickness Z per unit change amount of the distance X along the extending direction of the first finger portion 203 using the distance X from the end portion 201 and the thickness Z of the first finger portion 203 at the distance X. Can be expressed as a change rate ⁇ Z / ⁇ X.
- the first finger portion 203 has a first region 203a in which the thickness Z is reduced at a multistage change rate, and the thickness Z is reduced at a change rate of ⁇ Z 1 / ⁇ X 1 , and a thickness Z at a change rate of ⁇ Z 2 / ⁇ X 2 And a second region 203b that becomes smaller. That is, the first finger 203, thickness becomes thin in the rate of change [Delta] Z 1 / [Delta] X 1 from the end portion 201, on the way for a change rate [Delta] Z 1 / [Delta] X 1 is different from the rate of change and the rate of change [Delta] Z 2 / [Delta] X 2 The thickness is reduced.
- the rate of change Z 2 / ⁇ X 2 is smaller than the rate of change ⁇ Z 1 / ⁇ X 1 .
- the rate of change in thickness of the first finger portion 203 increases as it approaches the bus bar 19a side.
- the second finger portion 204 extends continuously from the boundary portion 202 with the first finger portion 203 and extends in the longitudinal direction of the finger 20a while maintaining the thickness of the boundary portion 202 of the first finger portion 203. Is done.
- the thickness of the 2nd finger part 204 shall be more than predetermined minimum thickness.
- the photoelectric conversion part 2 is produced
- FIG. 4 is a diagram showing the screen plate 20.
- the screen plate 20 has openings 190a and 190b and openings 200a to 200d corresponding to the shapes of the bus bars 19a and 19b and the fingers 20a to 20d.
- the openings 190a, 190b, 200a to 200d are filled with a conductive paste, which is a constituent material of the bus bars 19a and 19b and the fingers 20a to 20d, with a squeegee, and the photoelectric conversion unit 2 has a light receiving surface.
- Print the conductive paste Specifically, a conductive paste is placed on the screen plate 20 in which the openings 190a, 190b, 200a to 200d are formed, and the squeegee is moved along the printing direction D to move the openings 190a, 190b, 200a to 200d. Fill with conductive paste.
- the conductive paste remains from the openings 190a, 190b, 200a to 200d and is printed on the light receiving surface, and the bus bars 19a and 19b and the fingers 20a to 20a. 20d is formed.
- the cross-sectional area S of the finger 20a will be described in detail.
- the cross-sectional area S means the area of a cross section along the line CC in FIG.
- the thickness of the screen plate 20 is designed to be constant. Therefore, the cross-sectional area S of the finger 20a is determined by the cross-sectional area of the conductive paste filled in the opening 200a, and is represented by the product of the opening width and the filling thickness of the conductive paste.
- the change rate of the opening width of the opening 200a of the screen plate 20 increases as the opening 200a approaches the opening 190a corresponding to the bus bar 19a in accordance with the shape of the finger 20a.
- the cross-sectional area S of the finger 20a increases in accordance with the change rate of the width of the opening 200a of the screen plate 20 as it approaches the bus bar 19a.
- the distance X from the end part 201 and the cross-sectional area S of the first finger part 203 at the distance X are used along the extending direction of the first finger part 203.
- the ratio of the change ⁇ S of the cross-sectional area S per unit change amount of the distance X can be expressed as a change rate ⁇ S / ⁇ X.
- the first finger 203 has a first area 203a in which the cross-sectional area S increases at a multistage change rate, the cross-sectional area S increases at a change rate of ⁇ S 1 / ⁇ X 1, and a change rate of ⁇ S 2 / ⁇ X 2.
- the change rate ⁇ S 2 / ⁇ X 2 is smaller than the change rate ⁇ S 1 / ⁇ X 1 .
- the cross-sectional area S of the 1st finger part 203 is large as it approaches the bus-bar 19a, changing linear change rate (DELTA) S / (DELTA) X once or more.
- the change in the cross-sectional area S of the first finger portion 203 can be made to approach an ideal quadratic function as described later.
- the line widths of the fingers 20a to 20d are designed so as to suppress the light shielding loss and the power loss.
- the light blocking loss indicates a loss of light that does not reach the photoelectric conversion unit 2 because sunlight is blocked by the collector electrode 4.
- the power loss indicates a power loss that occurs when carriers flow through the collector electrode 4 as a current.
- the power loss P generated when the carriers collected by the fingers 20a to 20d are collected by the bus bars 19a and 19b is I 2 R (I: current value flowing through the fingers 20a to 20d, R: resistance of the fingers 20a to 20d) Value).
- the resistance value R of the fingers 20a to 20d is a relational expression of ⁇ ⁇ L / S ( ⁇ : electrical resistivity of the fingers 20a to 20d, L: length of the fingers 20a to 20d, S: cross-sectional area of the fingers 20a to 20d) Determined by
- ⁇ electrical resistivity of the fingers 20a to 20d
- L length of the fingers 20a to 20d
- S cross-sectional area of the fingers 20a to 20d
- a shape suitable for minimizing the power loss P is a shape in which the cross-sectional area S of the fingers 20a to 20d is 0 at the tip portion and increases in a quadratic function as it approaches the bus bars 19a and 19b. is there.
- the region where the line width is constant is short. The rate of change of the cross-sectional area S of the fingers 20a to 20d increases as the bus bars 19a and 19b are approached.
- the increase in the cross-sectional area S of the fingers 20a to 20d can be made closer to an ideal quadratic function as compared to the conventional linear cross-sectional area change.
- the change in the cross-sectional area S of the fingers 20a to 20d can be made close to a quadratic function.
- electric power loss can be reduced more.
- the light shielding loss can be reduced by reducing the line width toward the boundary portion 202 of the fingers 20a to 20d.
- the line width in the second finger portion 204 to be a rubbing prevention line width, the effective light-shielding loss is reduced, the fingers 20a to 20d are more easily formed, and workability is improved.
- FIG. 5 is a plan view of the light receiving surface side of a solar cell 1 a which is a first modification of the solar cell 1.
- the solar cell 1 a has a curved line width at the first finger portion 203.
- the “curve” includes a state in which the number of regions such as the first region 203a and the second region 203b in the solar cell 1 is increased and the outer shape of the first finger portion 203 is approximated to a curve.
- the rate of change of the cross-sectional area S of the fingers 20a to 20d increases as it approaches the bus bars 19a and 19b.
- the power loss can be further reduced as in the solar cell 1.
- the line width is prevented from being rubbed by the second finger portion 204, thereby effectively reducing the light-shielding loss and making the fingers 20a to 20d easier to form and improving the workability. ing.
- FIG. 6 is a plan view of the light receiving surface side of a solar cell 1b which is a second modification of the solar cell 1.
- solar cell 1 b has bus bars 19 a and 19 b having a zigzag shape.
- the rate of change of the cross-sectional area S of the fingers 20a to 20d increases as the bus bars 19a and 19b are approached.
- the power loss can be further reduced as in the solar cell 1.
- the line width is prevented from being rubbed by the second finger portion 204, thereby effectively reducing the light-shielding loss and making the fingers 20a to 20d easier to form and improving the workability. ing.
- FIG. 7 is a cross-sectional view of a photoelectric conversion unit 2a, which is a modification of the photoelectric conversion unit 2.
- the photoelectric conversion unit 2a includes a p-type polycrystalline silicon substrate 241, an n-type diffusion layer 231 formed on the front side of the p-type polycrystalline silicon substrate, and an aluminum formed on the back surface of the p-type polycrystalline silicon substrate 241.
- the photoelectric conversion unit 18 may have any other shape as long as it has a function of converting sunlight into electricity.
- FIG. 8 is a plan view of a modification of the collector electrode on the back surface side of the photoelectric conversion unit 2.
- a metal film 251 covering substantially the entire surface of the transparent conductive film 17 may be formed instead of the fingers 22a to 22d.
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Photovoltaic Devices (AREA)
Abstract
Cette invention concerne une cellule solaire (1) dotée d'une unité de conversion photoélectrique (2) et d'une électrode collectrice (4), disposée sur la surface principale de l'unité de conversion photoélectrique (2). Ladite électrode collectrice (4) comprend des barres omnibus (19a, 19b), ainsi que des doigts (20a à 20d) qui croisent les barres omnibus (19a, 19b). Chacun desdits doigts (20a à 20d) comprend une première partie de doigt (203) dont la largeur va en diminuant par paliers multiples à partir du côté de la barre omnibus (19a, 19b) vers l'extérieur de l'unité de conversion, et une seconde partie de doigt (204) qui s'étend de manière continue à partir de la première partie de doigt (203), et qui présente une partie de liaison (202) de largeur constante entre la première partie de doigt (203) et la seconde partie de doigt.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2012/056387 WO2013136433A1 (fr) | 2012-03-13 | 2012-03-13 | Cellule solaire |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2012/056387 WO2013136433A1 (fr) | 2012-03-13 | 2012-03-13 | Cellule solaire |
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Publication Number | Publication Date |
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WO2013136433A1 true WO2013136433A1 (fr) | 2013-09-19 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2012/056387 WO2013136433A1 (fr) | 2012-03-13 | 2012-03-13 | Cellule solaire |
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WO (1) | WO2013136433A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018082176A (ja) * | 2016-11-17 | 2018-05-24 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びこれを含む太陽電池パネル |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0653531A (ja) * | 1992-07-29 | 1994-02-25 | Sharp Corp | 光電変換装置およびその製造方法 |
JPH06283736A (ja) * | 1993-03-29 | 1994-10-07 | Sharp Corp | 太陽電池 |
JP3154145U (ja) * | 2009-02-11 | 2009-10-08 | 新日光能源科技股▼分▲有限公司 | 電極構造 |
WO2011013814A2 (fr) * | 2009-07-30 | 2011-02-03 | 三洋電機株式会社 | Module à cellules solaires |
-
2012
- 2012-03-13 WO PCT/JP2012/056387 patent/WO2013136433A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0653531A (ja) * | 1992-07-29 | 1994-02-25 | Sharp Corp | 光電変換装置およびその製造方法 |
JPH06283736A (ja) * | 1993-03-29 | 1994-10-07 | Sharp Corp | 太陽電池 |
JP3154145U (ja) * | 2009-02-11 | 2009-10-08 | 新日光能源科技股▼分▲有限公司 | 電極構造 |
WO2011013814A2 (fr) * | 2009-07-30 | 2011-02-03 | 三洋電機株式会社 | Module à cellules solaires |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018082176A (ja) * | 2016-11-17 | 2018-05-24 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びこれを含む太陽電池パネル |
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