JP5935047B2 - 太陽電池、太陽電池モジュール及び太陽電池の製造方法 - Google Patents
太陽電池、太陽電池モジュール及び太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000010410 layer Substances 0.000 claims description 183
- 239000011247 coating layer Substances 0.000 claims description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 239000011135 tin Substances 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 17
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- 239000004065 semiconductor Substances 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-M Butyrate Chemical compound CCCC([O-])=O FERIUCNNQQJTOY-UHFFFAOYSA-M 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Natural products CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- -1 tanta Chemical compound 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Description
第1の実施の形態における太陽電池100は、図1の断面図に示すように、基板10、i型非晶質層12i、p型非晶質層12p、透明導電層14、i型非晶質層16i、n型非晶質層16n、透明導電層18、コーティング層20,22、及び集電極24,26を含んで構成される。i型非晶質層12i、p型非晶質層12p、i型非晶質層16i及びn型非晶質層16nは、結晶粒を含んでいてもよい。また、太陽電池モジュール300は、太陽電池100、充填層28,30及び封止体32,34を含んで構成される。
第2の実施の形態における太陽電池200は、図5の断面図に示すように、基板10、i型非晶質層12i、p型非晶質層12p、透明導電層14、i型非晶質層16i、n型非晶質層16n、透明導電層18、コーティング層20,22及び集電極36,38を含んで構成される。また、太陽電池モジュール400は、太陽電池200、充填層28,30及び封止体32,34を含んで構成される。
Claims (2)
- 受光面及び裏面の少なくとも一方に集電極が形成された太陽電池と、
前記集電極上に配される樹脂の充填層と、を備える太陽電池モジュールであって、
前記太陽電池は、透明導電層を備え、
前記集電極は、前記透明導電層上に形成され銅を含む主導電層と、前記主導電層の上面側を被うオーバーコート層と、を含み、
前記オーバーコート層は、ニッケル、錫、チタン、タンタル、タングステン、パラジウムの少なくとも1つを含み、
前記集電極は、絶縁性のコーティング層間に形成され、
前記集電極の膜厚は、前記コーティング層の膜厚よりも小さい太陽電池モジュール。 - 表面に透明導電層を備えた太陽電池の受光面及び裏面の少なくとも一方の面上に、開口を有するコーティング層を形成する第1の工程と、
前記開口内に露出する前記一方の面上を金属でめっきし、前記コーティング層より膜厚が小さい集電極を形成する第2の工程と、
前記コーティング層と前記集電極とを充填層で被う第3の工程と、
を備え、
前記第2の工程は、銅を含む主導電層を形成する工程と、前記主導電層の上面側を被い、ニッケル、錫、チタン、タンタル、タングステン、パラジウムの少なくとも1つを含むオーバーコート層を形成する工程と、を含む、太陽電池モジュールの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2011/072325 WO2013046386A1 (ja) | 2011-09-29 | 2011-09-29 | 太陽電池、太陽電池モジュール及び太陽電池の製造方法 |
Related Child Applications (1)
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JP2015180482A Division JP6191995B2 (ja) | 2015-09-14 | 2015-09-14 | 太陽電池モジュール |
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JPWO2013046386A1 JPWO2013046386A1 (ja) | 2015-03-26 |
JP5935047B2 true JP5935047B2 (ja) | 2016-06-15 |
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Country Status (4)
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US (2) | US9502589B2 (ja) |
EP (1) | EP2763185B1 (ja) |
JP (1) | JP5935047B2 (ja) |
WO (1) | WO2013046386A1 (ja) |
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JP6184263B2 (ja) * | 2013-09-11 | 2017-08-23 | 三菱電機株式会社 | 太陽電池モジュールの製造方法 |
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JPH036867A (ja) * | 1989-06-05 | 1991-01-14 | Mitsubishi Electric Corp | 光発電素子の電極構造、形成方法、及びその製造装置 |
JPH03250671A (ja) * | 1990-01-31 | 1991-11-08 | Sharp Corp | 半導体光電変換装置及びその製造方法 |
JPH04146684A (ja) | 1990-10-08 | 1992-05-20 | Matsushita Electric Ind Co Ltd | 回路基板およびその作製方法 |
JP2938634B2 (ja) * | 1991-10-08 | 1999-08-23 | キヤノン株式会社 | 太陽電池モジュール |
US5543333A (en) * | 1993-09-30 | 1996-08-06 | Siemens Solar Gmbh | Method for manufacturing a solar cell having combined metallization |
AUPP437598A0 (en) * | 1998-06-29 | 1998-07-23 | Unisearch Limited | A self aligning method for forming a selective emitter and metallization in a solar cell |
JP2000058885A (ja) | 1998-08-03 | 2000-02-25 | Sanyo Electric Co Ltd | 太陽電池及びその製造方法 |
JP3937945B2 (ja) * | 2002-07-04 | 2007-06-27 | セイコーエプソン株式会社 | 表示装置及びこれを備えた電子機器 |
JP2004247596A (ja) * | 2003-02-14 | 2004-09-02 | Kyocera Corp | 太陽電池素子およびその製造方法およびその太陽電池素子を用いた太陽電池モジュール |
WO2004085567A2 (en) * | 2003-03-05 | 2004-10-07 | Electrochromix, Inc | Electrochromic mirrors and other electrooptic devices |
US20070240759A1 (en) * | 2006-04-13 | 2007-10-18 | Applied Materials, Inc. | Stacked thin film photovoltaic module and method for making same using IC processing |
JP2008135654A (ja) * | 2006-11-29 | 2008-06-12 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP4817254B2 (ja) * | 2006-12-01 | 2011-11-16 | 大日本塗料株式会社 | 酸化ジルコニウム粒子分散液、酸化ジルコニウム粒子含有光硬化性組成物及び硬化膜 |
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JP2011171270A (ja) * | 2010-01-25 | 2011-09-01 | Hitachi Chem Co Ltd | 電極用ペースト組成物および太陽電池 |
KR101661768B1 (ko) * | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
KR101699300B1 (ko) * | 2010-09-27 | 2017-01-24 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
US20120222736A1 (en) * | 2011-03-04 | 2012-09-06 | Applied Materials, Inc. | Front contact solar cell manufacture using metal paste metallization |
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2011
- 2011-09-29 EP EP11873077.9A patent/EP2763185B1/en active Active
- 2011-09-29 JP JP2013535734A patent/JP5935047B2/ja active Active
- 2011-09-29 WO PCT/JP2011/072325 patent/WO2013046386A1/ja active Application Filing
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2014
- 2014-02-28 US US14/193,638 patent/US9502589B2/en active Active
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2016
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Also Published As
Publication number | Publication date |
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US9502589B2 (en) | 2016-11-22 |
EP2763185A1 (en) | 2014-08-06 |
EP2763185A4 (en) | 2015-04-29 |
WO2013046386A1 (ja) | 2013-04-04 |
US20140174531A1 (en) | 2014-06-26 |
EP2763185B1 (en) | 2021-09-01 |
US9972728B2 (en) | 2018-05-15 |
US20170040468A1 (en) | 2017-02-09 |
JPWO2013046386A1 (ja) | 2015-03-26 |
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