WO2013120696A1 - Procédé permettant de refroidir des disques en matériau semi-conducteur - Google Patents

Procédé permettant de refroidir des disques en matériau semi-conducteur Download PDF

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Publication number
WO2013120696A1
WO2013120696A1 PCT/EP2013/051840 EP2013051840W WO2013120696A1 WO 2013120696 A1 WO2013120696 A1 WO 2013120696A1 EP 2013051840 W EP2013051840 W EP 2013051840W WO 2013120696 A1 WO2013120696 A1 WO 2013120696A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor material
heat sink
ring
disk
plate
Prior art date
Application number
PCT/EP2013/051840
Other languages
German (de)
English (en)
Inventor
Hannes Hecht
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of WO2013120696A1 publication Critical patent/WO2013120696A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Definitions

  • the invention relates to a method for cooling hot slices of semiconductor material, for example, after an epitaxial process, wherein the disc is protected from semiconductor material during the cooling process from metal contamination.
  • Semiconductor material e.g. Silicon
  • Semiconductor material e.g. Silicon
  • Produce semiconductor material by a process sequence which is essentially the pulling of a single crystal of a melt of semiconductor material, a separation of the single crystal into slices (for example by means of a wire saw), a
  • a method of manufacturing a wafer of semiconductor material is
  • a surface of the wafer of semiconductor material may be epitaxially coated for specific applications. This can either be with one
  • monocrystalline layer of the same semiconductor material from which the substrate is made (homoepitaxial coating, for example a monocrystalline silicon layer on a silicon substrate) happen, or with a layer whose Material differs from the substrate (heteroepitaxial coating).
  • Epitaxial reactors which are used in particular in the semiconductor industry for depositing an epitaxial layer on a wafer of semiconductor material are described, for example, in EP 0 445 596 B1 and US Pat
  • lamps or lamp banks heated for example, lamps or lamp banks heated
  • a gas mixture consisting of a source gas, a carrier gas and optionally a doping gas.
  • a susceptor which consists for example of graphite, silicon carbide or quartz.
  • the disk of semiconductor material lies during the
  • Semiconductor material which is usually not deposited, to protect from the source gas.
  • passively cooling devices via radiation are preferably used for cooling hot disks of semiconductor material after epitaxy.
  • Disk of semiconductor material, onto another object, e.g. a cooling element (heat sink) is transmitted, among other things, determined both by the temperature difference between the two objects and the distance between the two objects to each other.
  • a cooling element heat sink
  • semiconductor material after epitaxy also depends on the thermal conductivity or thermal capacity of the heat sink, i. how well and how much thermal radiation the heat sink can absorb. With a sufficient amount of thermal conductivity or thermal capacity of the heat sink, i. how well and how much thermal radiation the heat sink can absorb. With a sufficient amount of thermal radiation the heat sink can absorb.
  • Heat sinks made of steel, copper, brass or aluminum are preferably manufactured.
  • the metal can still be mixed with another metal, e.g. Nickel, plated.
  • Reactor space very close (0.2 - 3 mm) are moved to a surface acting as a heat sink, so that the surface of the
  • Heat radiation can absorb the disc.
  • the hot epitaxial disk of semiconductor material is positioned between two heat sinks, that the distance between the disc and the two
  • Heat sinks is very low (0.2 - 3 mm).
  • the hot epitaxial disk is made
  • the hot disks of semiconductor material are slightly curved due to the heat during the epitaxial process and "jump" on cooling back to its original (planar) shape due to the very low for optimal heat transfer distance between the hot disk
  • Semiconductor material can come.
  • the object of the invention was to provide a cost-effective and effective method for cooling at least one hot disk of semiconductor material, which makes it possible for the at least one slice of semiconductor material during the cooling process before a possible
  • the object is achieved by a method for cooling a hot disk of semiconductor material (5), comprising
  • a first plate (1) which consists of a
  • Material is made, which does not contaminate the disc (5) when touched, and between the plate (1) and a side surface of the disc (5) is a distance h.
  • Example but can also be used for the cooling of several slices of semiconductor material, the
  • Rapid Thermal Processing such as Rapid Thermal Annealing (RTA) or Rapid Thermal Oxidation (Rapid Thermal
  • Fig. 1 shows the average cooling rates of silicon wafers as a function of time.
  • Fig. 2a shows the top view of a circular surface of a heat sink covering plate 1, which of a
  • the ring 2 preferably has on the
  • the ring 2 can rest on the plate 1 (FIG. 2 b) on the flat surface 3 of FIG
  • Heatsink 4 rest (Fig. 2c) or in an outer
  • annular recess having a surface 3a in the
  • Fig. 3 shows schematically preferred embodiments of serving for supporting the disc of semiconductor material 5 ring 2 with a lying on the inside ring recess (pocket) 2a for receiving the disc of semiconductor material 5, wherein the support surface 2a a) flat, b) convex or c ) is inclined to the ring inside with an inclination angle (relative to the surface of the heat sink). Between the plate 1 and the opposite side of the plate 1 of resting on the support surface 2a disc of semiconductor material 5 is a
  • FIG. 4 schematically shows, by way of example, two embodiments for cooling a slice of semiconductor material 5 between two heat sinks 4, wherein the slice of semiconductor material 5 is horizontal on a ring 2 during the cooling process
  • the approximately 400-950 ° C hot disk of semiconductor material is preferably rearranged with a gripper robot under a protective gas atmosphere for cooling in a cooling station.
  • the cooling station can be located both in the reactor space of the Epi reactor and outside, but connected to the Epi reactor.
  • the cooling station for cooling the hot, epitaxial disks of semiconductor material adjacent to the actual reactor space is standard.
  • the cooling station of the Applied Materials Epi reactor consists of one with a coolant, e.g. Water,
  • Semiconductor material are placed on these quartz pins to prevent contact and thus contamination between the disc of semiconductor material and heat sink.
  • a cooling station preferably consists essentially of a closed space in which there is at least one metal body (heat sink) 4 through which a coolant flows, which is the heat energy of the at least one hot one
  • Slice of semiconductor material 5 receives and releases to the coolant.
  • the heat sink 4 made of nickel-plated aluminum or stainless steel.
  • a heat sink 4 with a flat surface 3 is preferred.
  • the planar surface 3 of the heat sink 4 is during the
  • the surface 3 of the heat sink 4 and the front or the back of the disc to be cooled semiconductor material 5 parallel to each other.
  • the surface 3 of the heat sink 4 is round and has the same diameter as the disc to be cooled
  • the diameter of the surface 3 of the heat sink 4 is greater than the diameter of the cooling disc of semiconductor material 5.
  • any other external shape of the surface 3 of the heat sink 4 is preferred, the surface 3 in its smallest cross-section Q at least the diameter of the
  • cooling disc of semiconductor material 5 corresponds.
  • the coolant used is preferably water. Likewise preferred is the addition of additives, for example glycol, to the coolant.
  • the disc can be easily cooled.
  • Semiconductor material 5 are also positioned horizontally between two heat sinks 4 so that the disc out
  • pins which are preferably made of quartz and have a height h, above the surface 3 of a first lower
  • Heat sink 4 is stored and above the disc of semiconductor material 5, a second heat sink 4 is located at a distance h x , wherein the distance h x preferably corresponds to the height h of the quartz pins.
  • the prior art wafer is brought close to a heat sink 4 by means of a suitable carrier, the wafer of semiconductor material not touching the heat sink 4 and the front or back side of the wafer made of semiconductor material preferably parallel to
  • the wafer of semiconductor material 5 can also be vertical
  • Semiconductor material are each located at an equal distance h or h x parallel to the surfaces 3 of the two heat sink 4. In general, the contact is the hot disk
  • Disc of semiconductor material 5 the possibly coming into contact metallic surface of the heat sink 4 is covered with a plate 1.
  • the cover of the heat sink must fulfill two tasks. On the one hand, the cover must not have a negative influence on the cooling process, including the cooling rate of the hot disk of semiconductor material 5, and on the other hand, the
  • the plate 1 is made to cover the surface 3 of a heat sink 4 made of silicon or sapphire. Both materials do not appreciably affect the cooling rate of the hot semiconductor material slices 5, as extensive experiments by the inventors have shown ( Figure 1).
  • the thickness of the plate 1 for covering the heat sink is preferably 0.05-2 mm, more preferably 0.2-1 mm.
  • the size of the heat sink 4 is preferably chosen such that a suitably dimensioned heat sink 4 has a surface 3 suitably dimensioned with respect to the diameter of the disk of semiconductor material 5, which during the
  • Semiconductor material 5 is opposite at a distance h.
  • Diameter D of this circular surface 3 is preferably larger than the diameter of the disc to be cooled
  • Semiconductor material 5 is.
  • Heat sink 4 during the cooling process of a page a disc of semiconductor material 5 is opposite, covered by a suitably shaped plate 1.
  • the plate 1 is flat on the top 3 of the heat sink (Fig. 2b
  • Heatsink 4 a circular plate 1 to the cover
  • the diameter of the plate 1 for covering the surface 3 of the heat sink 4 preferably corresponds to the diameter D of the circular surface 3 (FIG. 2b).
  • the diameter of the plate 1 for covering the surface 3 of the heat sink 4 preferably corresponds to the diameter D of the circular surface 3 (FIG. 2b).
  • the diameter of the heat sink 4 is particularly preferred
  • Plate 1 selected to cover the heat sink 4 is slightly smaller than the diameter D of the circular surface 3, so that, in a centered support of the plate 1 on the disc of semiconductor material 5 facing surface 3 of
  • Heatsink 4 an uncovered edge strip of metal remains.
  • the diameter D of the circular surface 3 of the heat sink 4 is, for example, 310 mm
  • the diameter of the plate for covering is, for example, 295 mm.
  • a heat sink 4 with a circular surface 3 with a diameter of 310 mm, for example, is suitable for Cooling of discs of semiconductor material with a diameter of up to 300 mm.
  • example has a width of 15 mm, a ring 2 is placed, which serves as a bearing surface for the hot disk
  • the inner diameter of the ring 2 is in this other
  • the ring 2 is made of silicon carbide (SiC) or sapphire.
  • the thickness (height) of the ring 2 is preferably selected such that the ring 2 has a greater thickness than the plate 1, which lies on the surface 3 of the heat sink 4 facing the disk of semiconductor material 5. This ensures that, when a slice of semiconductor material 5 is applied to the ring 2, the slice of semiconductor material 5 is at a distance h from the plate 1.
  • the thickness (height) of the ring is preferably 0.5 to 10 mm, particularly preferably 0.5 to 5 mm.
  • Semiconductor material is preferably flat (planar) (FIG. 3a) or convex (FIG. 3b), particularly preferably inclined towards the inner side of the ring (FIG. 3c).
  • a ring surface inclined toward the support surface 2a wherein the inclination angle, based on the surface 3 of the heat sink 4, preferably between 0.1 to 30 °, more preferably between 1 to 10 °.
  • the contact surface between the ring 2 and the disc of semiconductor material 5 minimal.
  • the height h is preferably 0.1 to 5 mm, particularly preferably 0.1 to 2 mm.
  • Semiconductor material 5 faces, a circumferential
  • Recess of the heat sink 4 is, preferably corresponds to the inner diameter of this circumferential recess of the heat sink 4, so that the ring 2 is secured by the increased compared to the recessed surface 3a inner surface 3 of the heat sink 4 against slipping.
  • Recess raised surface 3 of the heat sink 4 is covered in this embodiment with the plate 1, wherein the plate 1 is flush with the inner edge of the ring 2 (Fig. 2d).
  • Heatsink 4 lying ring 2 is chosen so that a resting on the ring disc of semiconductor material 5 by the height h is higher than the surface of the plate 1, which lies on the surface 3 of the heat sink 4.
  • the thickness (height) of the ring is preferably 0.5 to 10 mm, particularly preferably 0.5 to 5 mm.
  • the height h is preferably 0.1 to 5 mm, particularly preferably 0.1 to 2 mm.
  • the outer diameter of the ring 2 preferably corresponds to the
  • Diameter D of the surface 3 of the heat sink 4 so that the ring 2 flush with the surface 3 of the heat sink. 4
  • the ring 2 is screwed to the heat sink 4. Also preferred is a fixation of the ring 2 by
  • the surface of the ring 2 additionally has a circumferential (annular) recess 2a (pocket) on the
  • Semiconductor material 5 can be inserted and thus serves as a support surface for the disc of semiconductor material 5.
  • the width of the circumferential recess 2a on the inner ring side is characterized by an inner diameter (corresponds to the
  • the outer diameter d of this circumferential recess 2a on the inside of the ring is slightly larger than the diameter of the disk of semiconductor material 5, which is to be placed in this recess of the ring 2.
  • the outer diameter d is the circumferential
  • Recess 2a on the inside of the ring for receiving a disk of semiconductor material 5 with a diameter of 300 mm, preferably in a range of 302 - 320 mm, especially preferably in a range of 302 to 305 mm, wherein the
  • Support surface 2a in the annular recess preferably has a width of 2 to 5 mm.
  • semiconductor material 5 may be planar (FIG. 3 a), convex (FIG. 3 b) or inclined towards the inside of the ring (FIG. 3 c).
  • a ring surface inclined toward the support surface 2a wherein the inclination angle, based on the surface 3 of the heat sink 4, preferably between 0.1 ° and 30 °, more preferably between 1 ° and 10 °.
  • the inclination angle based on the surface 3 of the heat sink 4 preferably between 0.1 ° and 30 °, more preferably between 1 ° and 10 °.
  • the ring 2 is provided with channels (holes) and or recesses in the surface, so that the
  • Gas space which is located between the disc of semiconductor material 5 and the surface of the heat sink covering plate 1 with the height h, is in contact with the gas space of the cooling station.
  • bearing surfaces 2a of the ring sections corresponds to the shapes shown in FIG.
  • the hot disk of semiconductor material 5 can be cooled in an economically acceptable time to the extent that it for the other
  • Embodiment of the inventive method for cooling hot slices of semiconductor material 5 is carried out the
  • the above-described embodiments of the plate 1 for covering the heat sink and the ring 2 as a support surface for the disc of semiconductor material 5 are preferred for the lower heat sink 4.
  • the surface 3 of the second (upper) heat sink 4 facing the wafer of semiconductor material 5 is covered with a plate 1 of silicon or sapphire.
  • the thickness of the plate 1 for covering the heat sink is preferably 0.05-2 mm, more preferably 0.2-1 mm.
  • the plate 1 for covering the second heat sink 4 is preferably fixed with non-metallic screws or bolts on the surface 3 of the heat sink 4. Also preferred is the sticking of the plate. 1
  • the hot disk of semiconductor material 5 is in this case
  • Heatsink 4 which is preferably flowed through with a cooling medium, down to a height h x on the upper side of the disc of semiconductor material 5 lowered.
  • the hot disk is off
  • Semiconductor material 5 is inserted with a robot arm on the ring 2 or in the support surface 2a of the ring 2, and a second heat sink 4, which is preferably flowed through with a cooling medium, already at a height h x above the upper side of the disc of semiconductor material. 5 located.
  • the distance h x corresponds to the distance h, so that the distance between the respective surfaces 3 of
  • Heatsink 4 covering plates 1 and the corresponding
  • the distance h and h x 0.1 to 5 mm, particularly preferably 0.1 to 2 mm.
  • the second (upper) heat sink 4 made of the same material as the lower heat sink 4 and also corresponds in its dimensions and shape of the lower heat sink 4, so that on both sides
  • Semiconductor material 5 is ensured to the two heat sinks 4.
  • water is preferably used. Also preferred is the addition of additives such as glycol to the coolant.
  • At least one hot disk of semiconductor material 5 wherein the disc of semiconductor material 5 on a ring 2 or rests on a support surface 2a of the ring 2, not limited to a horizontal orientation of the disc of semiconductor material 5 and the at least one heat sink 4, but may also for any other inclined
  • Positions (0 - 90 ° with respect to a horizontal surface) are applied.
  • the distance h is preferably 0.1 to 5 mm, particularly preferably 0.1 to 2 mm.
  • the heat sink 4 made of nickel-plated aluminum or stainless steel.
  • the size of the heat sink 4 is preferably selected such that a suitably dimensioned heat sink 4 has a surface 3, suitably dimensioned with respect to the diameter of the disk of semiconductor material 5, which has a surface 3 during the process
  • Semiconductor material 5 is opposite at a distance h.
  • Semiconductor material 5 is opposite, is covered with a plate 1 of silicon or sapphire.
  • the shape or diameter of the plate 1 corresponds to the shape or diameter of the surface 3 of the heat sink 4.
  • the plate 1 for covering the surface 3 of the heat sink 4 is preferably made with non-metallic screws or bolts on Heatsink 4 attached. Also preferred is the sticking of the plate. 1
  • the thickness of the plate 1 for covering the second heat sink is preferably 0.05-2 mm, more preferably 0.2-1 mm.
  • water is preferably used. Also preferred is the addition of additives such as glycol to the coolant.
  • the hot wafer of semiconductor material with a suitable carrier is vertical or at any inclination (with respect to a horizontal surface) between two, each with a plate 1 made of silicon or sapphire covered surfaces 3 of metal heat sinks 4, both preferably of one
  • Coolants are flowed through, centered with a distance h or h x positioned.
  • h h x .
  • the distance h and h x 0.1 to 5 mm, particularly preferably 0.1 to 2 mm.
  • both heat sinks 4 are preferably made of the same material and are in theirs
  • Semiconductor material 5 is ensured to the two heat sinks 4.
  • both heatsinks 4 are made of nickel-plated
  • the thickness of the plate for covering the second heat sink is preferably 0.05-2 mm, more preferably 0.2 mm.
  • coolant for the heat sink water is preferably used.
  • additives for example glycol

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un procédé permettant de refroidir des disques en matériau semi-conducteur. L'objet de l'invention est un procédé permettant de refroidir des disques chauds en matériau semi-conducteur, par exemple après un procédé épitaxial, selon lequel le disque en matériau semi-conducteur pendant le procédé de refroidissement est protégé d'une contamination métallique.
PCT/EP2013/051840 2012-02-13 2013-01-31 Procédé permettant de refroidir des disques en matériau semi-conducteur WO2013120696A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012202099A DE102012202099A1 (de) 2012-02-13 2012-02-13 Verfahren zum Abkühlen von Scheiben aus Halbleitermaterial
DE102012202099.3 2012-02-13

Publications (1)

Publication Number Publication Date
WO2013120696A1 true WO2013120696A1 (fr) 2013-08-22

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Citations (10)

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Publication number Priority date Publication date Assignee Title
DE2906470A1 (de) 1978-02-20 1979-08-23 Hitachi Ltd Halbleitersubstrat und verfahren zu seiner herstellung
EP0445596B1 (fr) 1990-03-09 1996-05-15 Applied Materials, Inc. Réacteur à dÔme double pour le traitement de semi-conducteurs
US5902393A (en) 1996-01-19 1999-05-11 Nec Corporation Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy
WO2000016380A1 (fr) 1998-09-10 2000-03-23 Asm America, Inc. Procede et appareil pour refroidir des substrats
EP1067587A2 (fr) * 1999-07-08 2001-01-10 Applied Materials, Inc. Traitement thermique pour un substrat
DE10025871A1 (de) 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
US20080182397A1 (en) 2007-01-31 2008-07-31 Applied Materials, Inc. Selective Epitaxy Process Control
DE102005045339B4 (de) 2005-09-22 2009-04-02 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
WO2009120729A1 (fr) * 2008-03-25 2009-10-01 Applied Materials, Inc. Mesure de température et commande d'un support de tranche dans une chambre de traitement thermique
US20090277376A1 (en) * 2008-05-09 2009-11-12 Siltronic Ag Method for producing an epitaxially coated semiconductor wafer

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US6300600B1 (en) * 1998-08-12 2001-10-09 Silicon Valley Group, Inc. Hot wall rapid thermal processor
JP3453069B2 (ja) * 1998-08-20 2003-10-06 東京エレクトロン株式会社 基板温調装置
US8701753B2 (en) * 2003-06-11 2014-04-22 Seagate Technology Llc Method and apparatus for cooling a planar workpiece in an evacuated environment with dynamically moveable heat sinks
US7239804B2 (en) * 2004-03-23 2007-07-03 Canon Kabushiki Kaisha Cooling device, and apparatus and method for manufacturing image display panel using cooling device
US7194199B2 (en) * 2005-06-03 2007-03-20 Wafermasters, Inc. Stacked annealing system

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2906470A1 (de) 1978-02-20 1979-08-23 Hitachi Ltd Halbleitersubstrat und verfahren zu seiner herstellung
EP0445596B1 (fr) 1990-03-09 1996-05-15 Applied Materials, Inc. Réacteur à dÔme double pour le traitement de semi-conducteurs
US5902393A (en) 1996-01-19 1999-05-11 Nec Corporation Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy
WO2000016380A1 (fr) 1998-09-10 2000-03-23 Asm America, Inc. Procede et appareil pour refroidir des substrats
EP1067587A2 (fr) * 1999-07-08 2001-01-10 Applied Materials, Inc. Traitement thermique pour un substrat
DE10025871A1 (de) 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
DE102005045339B4 (de) 2005-09-22 2009-04-02 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
US20080182397A1 (en) 2007-01-31 2008-07-31 Applied Materials, Inc. Selective Epitaxy Process Control
WO2009120729A1 (fr) * 2008-03-25 2009-10-01 Applied Materials, Inc. Mesure de température et commande d'un support de tranche dans une chambre de traitement thermique
US20090277376A1 (en) * 2008-05-09 2009-11-12 Siltronic Ag Method for producing an epitaxially coated semiconductor wafer

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