WO2013113231A1 - 阵列基板和显示装置 - Google Patents

阵列基板和显示装置 Download PDF

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Publication number
WO2013113231A1
WO2013113231A1 PCT/CN2012/084839 CN2012084839W WO2013113231A1 WO 2013113231 A1 WO2013113231 A1 WO 2013113231A1 CN 2012084839 W CN2012084839 W CN 2012084839W WO 2013113231 A1 WO2013113231 A1 WO 2013113231A1
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Prior art keywords
transparent conductive
conductive layer
array substrate
substrate according
protrusion
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English (en)
French (fr)
Inventor
王永灿
占红明
林丽锋
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Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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Priority to US13/822,150 priority Critical patent/US9201278B2/en
Publication of WO2013113231A1 publication Critical patent/WO2013113231A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]

Definitions

  • Embodiments of the invention relate to array substrates and display devices. Background technique
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • the display modes of TFT-LCD mainly include Twisted Nematic (TN) mode, Vertical Alignment (VA) mode, In-Plane-Switching (IPS) mode, and advanced super-dimensional field conversion ( ADvanced Super Dimension Switch, ADSDS or ADS) mode, etc.
  • the ADS mode is a liquid crystal display mode capable of widening the viewing angle, and forms an electric field generated by the edge of the slit electrode in the same plane and an electric field generated between the slit electrode layer and the plate electrode layer to form a multi-dimensional electric field, so that the inside of the liquid crystal cell All of the aligned liquid crystal molecules between the slit electrodes and directly above the slit electrode are capable of rotating, thereby improving the liquid crystal working efficiency and increasing the light transmission efficiency.
  • ADS mode can improve the picture quality of TFT-LCD, with high resolution, high light transmission efficiency, low power consumption, wide viewing angle, high aperture ratio, low chromatic aberration, and no push mura.
  • the pixel structure of the prior art ADS mode liquid crystal display panel passes through a voltage difference between the pixel electrode 21 (which is a plate electrode) and the common electrode 22 (which is a slit electrode) in a normal driving state of the pixel.
  • the formation of a multi-dimensional electric field can well control the action of the liquid crystal molecules, thereby realizing the display of black and white and gray scale.
  • FIG. 2 and FIG. 3 due to the design of the electrode itself, the horizontal component of the electric field above the slit electrode is large, and the polarized light is easily transmitted through the panel through the horizontal deflection of the liquid crystal, and has high light transmission efficiency. Whereas away from the slit electrode (ie, above the slit), since the vertical component of the electric field is large and the light transmission efficiency is low, the light transmission efficiency of the liquid crystal panel is low overall. Summary of the invention
  • an array substrate comprising: a substrate; and a first transparent conductive layer, an insulating layer, and a second transparent conductive layer sequentially formed on the substrate, wherein the The two transparent conductive layers have a plurality of slit structures, and the first transparent conductive layer has a plurality of protrusions corresponding to the plurality of slit structures, and the height of the plurality of protrusions is smaller than the first transparent conductive layer The spacing between the layer and the second transparent conductive layer.
  • a display device including the above array substrate is provided.
  • FIG. 1 is a schematic cross-sectional view showing a pixel structure of a prior art ADS mode liquid crystal display panel
  • FIG. 2 is a diagram showing a pixel light transmission efficiency at a cross section of a prior art ADS mode liquid crystal display panel obtained by simulation;
  • FIG. 3 is an electric field distribution diagram of a prior art ADS mode liquid crystal display panel obtained by simulation at a cross section;
  • FIG. 4 is a cross-sectional view showing a pixel structure of an array substrate according to an embodiment of the present invention.
  • FIG. 5 is a diagram showing a light transmittance of a pixel at a cross section of an array substrate according to an embodiment of the present invention obtained by simulation;
  • FIG. 6 is an electric field distribution diagram of an array substrate of an embodiment of the present invention obtained by simulation
  • FIG. 7 is a view showing electric field distribution at a cross section of an array substrate of an embodiment of the present invention obtained by simulation and a prior art ADS mode liquid crystal display panel;
  • Fig. 8 is a graph showing the voltage-light transmission efficiency at the cross section of the array substrate of the embodiment of the present invention obtained by simulation and the prior art ADS mode liquid crystal display panel. detailed description
  • the embodiment of the present invention provides an array substrate and a display device including the array substrate.
  • the array substrate of the embodiment of the present invention may include, for example, a substrate (not shown) and a first transparent conductive layer 20, an insulating layer 3, and a second transparent conductive layer 5, which are sequentially formed on the substrate, wherein
  • the second transparent conductive layer 5 has a plurality of slit structures 5a.
  • the first transparent conductive layer 20 has a plurality of protrusions 20a corresponding to the plurality of slit structures 5a.
  • the height of the plurality of protrusions 20a is smaller than the first transparent conductive layer.
  • the first transparent conductive layer 20 is a pixel electrode
  • the second transparent conductive layer 5 is a common electrode, but the embodiment of the present invention is not limited thereto.
  • the array substrate of the embodiment of the present invention may further include a first insulating layer 1 formed on the substrate.
  • the first transparent conductive layer 20 as a pixel electrode is formed on the first insulating layer 1
  • the insulating layer 3 is formed on the pixel electrode, that is, the first transparent conductive layer 20, having a plurality of slit structures 5a.
  • Two transparent conductive layers 5, that is, a common electrode are formed on the insulating layer 3.
  • a lower alignment layer 4a is disposed on the second transparent conductive layer 5 as a common electrode, which covers the common electrode, and the upper alignment layer 4b is located above the lower alignment layer 4a, and the lower alignment layer 4a Between the upper alignment layer 4b and the upper alignment layer 4b is a liquid crystal layer 6.
  • the common electrode has a plurality of slit structures 5a having a plurality of protrusions 20a corresponding to the plurality of slit structures 5a of the common electrode, and the heights of the plurality of protrusions 20a are smaller than the pixel electrodes and The spacing between the common electrodes, but embodiments of the invention are not limited thereto.
  • the first transparent conductive layer is a common electrode and the second transparent conductive layer is a pixel electrode.
  • the pixel electrode has a plurality of slit structures
  • the common electrode has a plurality of protrusions corresponding to the plurality of slit structures of the pixel electrode, and the height of the plurality of protrusions is smaller than between the common electrode and the pixel electrode spacing.
  • the interval between each adjacent two slit structures in the plurality of slit structures 5a is the same, and each of the plurality of protrusions 20a corresponding to the plurality of slit structures 5a is adjacent.
  • the spacing is the same, which makes the overall electric field distribution of the entire pixel structure relatively uniform.
  • the pattern of the slit structure 5a may be a comb-shaped, a semi-annular, a step-shaped strip, or the like, but the embodiment of the present invention is not limited thereto, as long as it can be in the second transparent conductive layer 5.
  • a multi-dimensional electric field that drives the horizontal rotation of the liquid crystal molecules can be formed.
  • the height of the plurality of protrusions 20a is centered on a half of the pitch between the first transparent conductive layer 20 and the second transparent conductive layer 5, and is within a set deviation range.
  • the height of the plurality of protrusions 20a may be half the pitch between the first transparent conductive layer 20 and the second transparent conductive layer 5. In this way, while taking into account the feasibility of the manufacturing process, the edge of each slit is brought closer to the upper portion of each of the protrusions, so that the component of the multi-dimensional electric field in the horizontal direction is greatly increased.
  • the shape of the plurality of protrusions 20a may be an isosceles trapezoid, an arc, a triangle, or the like, but is not limited to these shapes.
  • the shape of the plurality of protrusions 20 is an isosceles trapezoid, and since the isosceles trapezoid is easier to implement in the patterning process, it is advantageous in improving production efficiency and cost.
  • the bottom angle of the isosceles trapezoid may be less than or equal to 60 degrees when the shape of the plurality of protrusions 20 is an isosceles trapezoid for the manufacturing process.
  • the protrusion 20a of the first transparent conductive layer 20 is designed as a hollow protrusion formed by bending a film, that is, the first insulating layer 1 under the first transparent conductive layer 20 has
  • the first transparent conductive layer 20 formed over the first insulating layer 1 naturally exhibits a hollow protrusion formed by bending of the film, so that it can be physically splashed together with the first transparent conductive layer 20. It is formed by shot deposition, which is conducive to cost saving.
  • the protrusion may also be designed as a solid protrusion, that is, a convex portion is formed on the first transparent conductive layer by a photolithography and etching process, so that the convex portion is completely replaced by the first A material of the transparent conductive layer is formed and integrally formed with the first transparent conductive layer.
  • each slit structure 5a corresponds to at least one projection 20a.
  • the projections 20a may be long prisms disposed in parallel with the slit structure 5a, and at this time, one slit structure corresponds to one projection.
  • the protrusions may also be at least two point protrusions corresponding to the slit structure, in which case one slit structure corresponds to at least two protrusions.
  • the voltage of the pixel electrode is the same in any pixel region, and the multi-dimensional electric field formed by the pixel electrode and the common electrode drives the liquid crystal molecules to deflect, thereby realizing black and white and gray scale.
  • Display As shown in FIG. 7, the electric field distribution at a set of slit structures, the solid line in the figure indicates the electric field distribution in the array substrate of the embodiment of the present invention, and the broken line indicates the electric field distribution in the ADS mode liquid crystal display panel of the prior art.
  • FIG. 3, FIG. 5, and FIG. 6 are diagrams showing pixel light transmission efficiency and electric field distribution of the array substrate of the embodiment of the present invention and the prior art ADS mode liquid crystal display panel obtained by simulation using simulation software.
  • the component of the electric field in the slit region in the horizontal direction is much larger than the component in the horizontal direction of the slit region in the prior art; comparing FIG. 2 and FIG. 5
  • the light transmission efficiency in the slit structure away from the slit fracture edge is greatly improved compared with the prior art.
  • Fig. 8 is a graph showing the voltage-light transmission efficiency at the cross section of the array substrate of the embodiment of the present invention obtained by simulation and the prior art ADS mode liquid crystal display panel. As can be seen by comparing the curves in FIG. 8, the light transmission efficiency of the array substrate of the embodiment of the present invention is greatly improved compared with the prior art, and the pixel voltage is reduced.
  • Embodiments of the present invention also provide a display device including a liquid crystal display device and other types of display devices.
  • the liquid crystal display device may be a liquid crystal panel, a liquid crystal television, a mobile phone, a liquid crystal display or the like, which may include a color filter substrate and the array substrate in the above embodiment.
  • the above other types of display devices, such as electronic paper, may not include a color filter substrate, but include the array substrate in the above embodiment.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)

Description

阵列基板和显示装置 技术领域
本发明的实施例涉及阵列基板和显示装置。 背景技术
薄膜晶体管液晶显示器 ( Thin Film Transistor Liquid Crystal Display, TFT-LCD )具有体积小、 功耗低、 制造成本相对较低和辐射少等优点， 在当 前的平板显示器市场占据了主导地位。
目前， TFT-LCD的显示模式主要有扭曲向列 （Twisted Nematic, TN ) 模式、垂直取向（ Vertical Alignment, VA )模式、平面转换（ In-Plane- Switching, IPS )模式和高级超维场转换（ADvanced Super Dimension Switch, ADSDS 或 ADS )模式等。 ADS模式是一种能够扩宽视角的液晶显示模式， 其通过 同一平面内狭缝电极边缘所产生的电场以及狭缝电极层与板状电极层之间产 生的电场形成多维电场， 使液晶盒内狭缝电极间以及狭缝电极正上方所有取 向的液晶分子都能够产生旋转,从而提高了液晶工作效率并增大了透光效率。 ADS模式可以提高 TFT-LCD的画面品质， 具有高分辨率、 高透光效率、 低 功耗、 宽视角、 高开口率、 低色差、 无挤压水波紋（push Mura )等优点。
如图 1所示， 现有技术的 ADS模式液晶显示面板的像素结构在像素正 常驱动状态下，通过像素电极 21 (为板状电极 )和公共电极 22 (为狭缝电极 ) 之间的电压差形成多维电场， 可以很好的控制液晶分子的动作， 从而实现黑 白和灰度的显示。 然而， 如图 2和图 3所示， 由于电极本身的设计， 狭缝电 极上方的电场水平分量较大，偏振光很容易通过液晶的水平偏转而透过面板， 具有较高的透光效率， 而远离狭缝电极的地方（即狭缝上方） 由于电场的垂 直分量较大， 透光效率较低， 因而液晶面板的透光效率整体较低。 发明内容
在本发明的一个实施例中， 提供一种阵列基板， 其包括基板以及依次形 成在所述基板上的第一透明导电层、 绝缘层和第二透明导电层， 其中所述第 二透明导电层具有多个狭缝结构， 所述第一透明导电层具有与所述多个狭缝 结构相对应的多个凸起， 所述多个凸起的高度小于所述第一透明导电层和所 述第二透明导电层之间的间距。
在本发明的另一个实施例中，提供一种显示装置，其包括上述阵列基板。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1为现有技术的 ADS模式液晶显示面板的像素结构的剖面示意图； 图 2为通过模拟获得的现有技术的 ADS模式液晶显示面板在剖面处的 像素透光效率图；
图 3为通过模拟获得的现有技术的 ADS模式液晶显示面板在剖面处的 电场分布图；
图 4为本发明实施例的阵列基板的像素结构的剖面示意图；
图 5为通过模拟获得的本发明实施例的阵列基板在剖面处的像素透光效 率图；
图 6 为通过模拟获得的本发明实施例的阵列基板在剖面处的电场分布 图；
图 7为通过模拟获得的本发明实施例的阵列基板与现有技术的 ADS模 式液晶显示面板在剖面处的电场分布图；
图 8为通过模拟获得的本发明实施例的阵列基板与现有技术的 ADS模 式液晶显示面板在剖面处的电压-透光效率的曲线图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。 为了解决现有技术中存在的 ADS模式液晶显示面板的透光效率整体较 低的技术问题， 本发明实施例提供了一种阵列基板以及包括该阵列基板的显 示装置。
下面参照图 4详细说明本发明实施例的阵列基板。 如图 4所示， 本发明 实施例的阵列基板可以包括例如基板（图中未示出） 以及依次形成在基板上 的第一透明导电层 20、 绝缘层 3和第二透明导电层 5 , 其中， 第二透明导电 层 5具有多个狭缝结构 5a, 第一透明导电层 20具有与多个狭缝结构 5a相对 应的多个凸起 20a, 多个凸起 20a的高度小于第一透明导电层 20和第二透明 导电层 5之间的间距。
在本实施例中，如图 4所示， 第一透明导电层 20为像素电极， 第二透明 导电层 5为公共电极， 但是本发明的实施例不限于此。
此外， 本发明实施例的阵列基板还可以包括形成在基板上的第一绝缘层 1。在此情况下，作为像素电极的第一透明导电层 20形成在第一绝缘层 1上， 绝缘层 3形成在像素电极、 即第一透明导电层 20上， 具有多个狭缝结构 5a 的第二透明导电层 5、 即公共电极形成在绝缘层 3上。
在本实施例中， 在作为公共电极的第二透明导电层 5上还设置有下配向 层 4a, 其覆盖于公共电极之上， 上配向层 4b位于下配向层 4a的上方， 下配 向层 4a和上配向层 4b之间为液晶层 6。
在本实施例中， 公共电极具有多个狭缝结构 5a, 像素电极具有与公共电 极的多个狭缝结构 5a相对应的多个凸起 20a, 并且多个凸起 20a的高度小于 像素电极和公共电极之间的间距， 但是本发明的实施例不限于此。
在本发明的另一实施例中， 第一透明导电层为公共电极， 第二透明导电 层为像素电极。 在此情况下， 像素电极具有多个狭缝结构， 公共电极具有与 像素电极的多个狭缝结构相对应的多个凸起， 并且多个凸起的高度小于公共 电极和像素电极之间的间距。
在本发明的实施例中，多个狭缝结构 5a中每相邻两个狭缝结构的间隔相 同 ,并且与多个狭缝结构 5a相对应的多个凸起 20a中每相邻两个凸起的间隔 相同， 这使得整个像素结构的整体电场分布较为均匀。
在本发明的实施例中， 狭缝结构 5a的图案可以是梳齿形、 半环形、 阶梯 形状的条形等， 但本发明的实施例不限于此， 只要能在第二透明导电层 5之 上形成驱动液晶分子水平旋转的多维电场即可。
在本发明的实施例中，多个凸起 20a的高度以第一透明导电层 20和第二 透明导电层 5之间的间距的二分之一为中心值， 并位于设定偏差范围内。 在 本发明的一些实施例中， 例如， 多个凸起 20a的高度可以是第一透明导电层 20和第二透明导电层 5之间的间距的一半。这样在充分考虑制造工艺可行性 的同时， 将每一个狭缝断口边缘与每一个凸起的上部距离拉近， 从而使多维 电场在水平方向上的分量大幅增加。
在本发明的实施例中， 多个凸起 20a的形状可以为等腰梯形、 弧形、 三 角形等， 但并不限于这些形状。 在本发明的一些实施例中， 例如， 多个凸起 20的形状为等腰梯形， 由于等腰梯形在构图工艺中较易实现， 因此有利于提 高生产效率并且节约成本。
此外，在本发明的实施例中， 出于制造工艺的考虑， 当多个凸起 20的形 状为等腰梯形时， 等腰梯形的底角可以小于或等于 60度。
在本实施例中，如图 4所示，将第一透明导电层 20的凸起 20a设计为由 薄膜弯曲形成的空心凸起，即在第一透明导电层 20下方的第一绝缘层 1具有 凸起结构的情况下，形成在第一绝缘层 1上方的第一透明导电层 20就会自然 地出现由薄膜弯曲形成的空心凸起,这样可以与第一透明导电层 20—起通过 物理溅射沉积而形成， 有利于节约成本。 在本发明的另一实施例中， 还可以 将凸起设计为实心凸起， 即通过光刻和蚀刻工艺在第一透明导电层之上形成 凸起部分， 从而使凸起部分完全由第一透明导电层的材料形成并且与第一透 明导电层一体形成。
在本发明的一些实施例中， 例如， 每个狭缝结构 5a与至少一个凸起 20a 相对应。 例如， 凸起 20a可以是与狭缝结构 5a平行设置的长棱台， 此时， 一 个狭缝结构对应一个凸起。 在本发明的一些实施例中， 凸起还可以是与狭缝 结构相对应的至少两个点状凸起， 此时， 一个狭缝结构对应至少两个凸起。
在本发明实施例的阵列基板中， 当像素被正常驱动时， 在任一个像素区 域内， 像素电极的电压相同， 通过像素电极与公共电极形成的多维电场驱动 液晶分子偏转， 从而实现黑白和灰度的显示。 如图 7所示， 为一组狭缝结构 处的电场分布， 图中实线表示本发明实施例的阵列基板中的电场分布， 虚线 表示现有技术的 ADS模式液晶显示面板中的电场分布。 通过比较图 7中两 种电场分布的曲线可以得出， 整体上， 本发明实施例的阵列基板中的电场在 水平方向上的分量远大于现有技术的 ADS模式液晶显示面板中的电场在水 平方向上的分量， 从而本发明实施例的阵列基板可以使面板的透光效率较大 提升。
图 2、 图 3、 图 5、 图 6为使用模拟软件通过模拟获得的本发明实施例的 阵列基板和现有技术的 ADS模式液晶显示面板的像素透光效率和电场分布 图。 对比图 3和图 6可以看出， 本发明实施例中狭缝区域的电场在水平方向 上的分量远大于现有技术中狭缝区域的电场在水平方向上的分量； 对比图 2 和图 5可以看出， 在本发明实施例的阵列基板中， 狭缝结构内远离狭缝断口 边缘处的透光效率较现有技术大大提升。
如图 4至图 7所示， 对比于现有技术， 由于釆用了与狭缝结构相对应的 凸起结构， 像素电极的表面积大大增加， 从而使得像素电极与公共电极所形 成的电场强度增加， 在面板透光效率提高的同时， 像素电压有所降低， 进而 显示面板的功耗也有所降低。 图 8为通过模拟获得的本发明实施例的阵列基 板与现有技术的 ADS模式液晶显示面板在剖面处的电压-透光效率的曲线 图。 通过比较图 8中的曲线可以看出， 本发明实施例的阵列基板的透光效率 较现有技术大大提高， 而像素电压却有所降低。
本发明的实施例还提供了一种显示装置， 包括液晶显示装置以及其它类 型的显示装置。 在本发明的实施例中， 液晶显示装置可以是液晶面板、 液晶 电视、 手机、 液晶显示器等， 其可以包括彩膜基板以及上述实施例中的阵列 基板。 上述其它类型的显示装置， 比如电子纸， 可以不包括彩膜基板， 但是 包括上述实施例中的阵列基板。
以上实施例仅用以说明本发明的技术方案， 而非对其限制； 尽管参照前 述实施例对本发明进行了详细的说明， 本领域的普通技术人员应当理解： 其 依然可以对前述各实施例所记载的技术方案进行修改， 或者对其中部分技术 特征进行等同替换； 而这些修改或者替换， 并不使相应技术方案的本质脱离 本发明各实施例技术方案的精神和范围。

Claims

权利要求书
1、一种阵列基板， 包括基板以及依次形成在所述基板上的第一透明导电 层、绝缘层和第二透明导电层，其中所述第二透明导电层具有多个狭缝结构， 所述第一透明导电层具有与所述多个狭缝结构相对应的多个凸起， 所述多个 凸起的高度小于所述第一透明导电层和所述第二透明导电层之间的间距。
2、如权利要求 1所述的阵列基板， 其中， 所述凸起的高度以第一透明导 电层和第二透明导电层之间的间距的二分之一为中心值， 并位于设定偏差范 围内。
3、如权利要求 1或 2所述的阵列基板， 其中， 所述凸起的截面形状为等 腰梯形、 弧形或三角形。
4、如权利要求 3所述的阵列基板， 其中， 所述凸起的截面形状为等腰梯 形， 并且所述等腰梯形的底角小于或等于 60度。
5、如权利要求 1至 4中任一项所述的阵列基板， 其中，每个所述狭缝结 构与至少一个所述凸起相对应。
6、如权利要求 1至 5中任一项所述的阵列基板， 其中， 所述凸起为实心 凸起；或者，所述凸起为由所述第一透明导电层的薄膜弯曲形成的空心凸起。
7、如权利要求 1至 6中任一项所述的阵列基板， 其中， 所述多个狭缝结 构中每相邻两个狭缝结构的间隔相同； 与所述多个狭缝结构相对应的所述多 个凸起中每相邻两个凸起的间隔相同。
8、如权利要求 1至 7中任一项所述的阵列基板， 其中， 所述第一透明导 电层为像素电极， 所述第二透明导电层为公共电极。
9、如权利要求 1至 7中任一项所述的阵列基板， 其中， 所述第一透明导 电层为公共电极， 所述第二透明导电层为像素电极。
10、 如权利要求 1至 9中任一项所述的阵列基板， 还包括第一绝缘层， 所述第一绝缘层形成在所述基板与所述第一透明导电层之间。
11、如权利要求 1至 10中任一项所述的阵列基板， 其中， 所述凸起的高 度为所述第一透明导电层和所述第二透明导电层之间的间距的一半。
12、 一种显示装置， 包括如权利要求 1至 11中任一项所述的阵列基板。
PCT/CN2012/084839 2012-02-02 2012-11-19 阵列基板和显示装置 Ceased WO2013113231A1 (zh)

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