Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
  • H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals

Definitions

• the present disclosure relates generally to semiconductor calibration circuits.
• the present disclosure relates to providing compensation for local variations such as process variations, voltage variations, and temperature variations within a chip.
• a delay calibration of circuitry on a semiconductor package can offset process, voltage, and temperature (PVT) variations.
• PVT voltage, and temperature
• Present calibration methods include off-chip components as well as external pins on the packages under calibration.
• some form of comparison is generally performed. For example, when an off-chip component is used for calibration, the off-chip component is usually used as a reference for comparison with on-chip components.
• CMOS complementary metal oxide semiconductor
• calibration may be performed entirely on-chip without off-chip components. Instead, calibration is performed with two different types of on-chip components.
• the two different types of on-chip components include active devices such as metal oxide semiconductor field effect transistors
• MOSFETs MOSFETs
• passive devices such as polysilicon (poly) resistors.
• PT corners process and temperature corners
• One aspect of the present disclosure provides a method of delay calibration of an on chip component including determining a delay difference between an active device and a passive device on a chip under calibration. Calibration of the on-chip component is based on the determined difference. In an illustrative configuration, the method includes configuring the on chip component to depend on actual variation between the active and passive device on the chip.
• the method of delay calibration according to aspects of the present disclosure is performed extremely quickly and efficiently. For example, the disclosed calibration process may be completed within a single cycle time. The disclosed calibration process may also be performed continuously without having to interrupt other processing tasks and without switching back and forth between the disclosed delay calibration process and other processing tasks.
• Another aspect of the present disclosure provides an apparatus for wireless
• the apparatus includes means for determining a delay difference between a first delay line of passive devices on a chip under calibration and a second delay line of active devices on the chip under calibration.
• the apparatus also includes means for calibrating an on chip component based on the determined difference.
• Another aspect of the present disclosure provides an apparatus for wireless
• the D-flip flop array is configured to generate a calibration code in response to a delay difference between the on chip active delay line and the on chip passive delay line.
• FIGURE 1 is a schematic diagram conceptually illustrating a general example of calibration circuitry according to aspects of the present disclosure.
• FIGURE 2 is a signal timing diagram illustrating differences between a passive delay and an active delay for calibration according to an aspect of the present disclosure.
• FIGURE 3 shows an exemplary wireless communication system in which a
• FIGURE 4 is a process flow diagram illustrating a method for calibration
• FIGURE 5 is a schematic diagrams conceptually illustrating ring oscillator
• FIGURE 6 is a block diagram illustrating a design workstation for circuit, layout, and logic design of a semiconductor component according to one aspect of the present disclosure.
• the process and temperature variations of active on-chip components are generally very different from the process and temperature variations of a passive on-chip component such as a poly- resistor. Variations in the range of +/- 60% can be seen in the performance metrics such as the saturation drive current (IDSAT) of on-chip active devices across different processes and voltages. In contrast, the variation in resistance of an on-chip passive resistor may only be in the range of about +/- 20% for example. Because of the different process and temperature variations, information about the process and temperature corners of a device under calibration may be obtained by comparing the outputs of different on-chip components such as active on-chip components and passive-on chip components in response to an input.
• IDSAT saturation drive current
• FIGURE 1 shows a top level block diagram of a design architecture including circuitry 100 for performing on-chip calibration according to aspects of the present disclosure.
• the circuitry 100 includes a first delay line 102 and a second delay line 104 coupled between an input 106 and inputs to a D Flip Flop array (DFF array) 108.
• the first delay line 102 includes a number of active components 114 and the second delay line 104 includes a number of passive components 116.
• a voltage regulator 110 is coupled between the first delay line 102 and the second delay line 104.
• a device under calibration 112 is coupled to an output of the DFF array 108.
• An input signal (either rising or falling edge, for example) is fed into both the first delay line 102 the second delay line 104.
• the delay of the first delay line 102 is dominated by active devices (e.g., inverters) and the delay of the second delay line 104 is dominated by passive devices (e.g., poly resistors). Both delay lines are powered by the voltage regulator 110 to reduce variation on their power supply. If voltage variation is also to be compensated for, a separate power supply is coupled to each delay line 102, 104.
• the first delay line 102 generates an array of outputs D[0 ], D[l], ... D[7], D[7] from different stages of the first delay line.
• the second delay line 104 only generates a single output (CLK) with its delay. For each input 106, the timing of the array of outputs D[] generated by the first delay line 102 and the timing of the CLK output from the second delay line 104 depends on the process, temperature and voltage.
• the array of outputs D[0] varies based on on-chip active component variations.
• the CLK output varies based on on-chip passive component variations.
• Differences between active component variation and passive component variation for different process, temperature and voltage conditions can be seen by comparing the CLK output with the array of outputs D[] under the different conditions.
• the difference between the CLK output and the array of outputs D[] can be used to generate a code that indicates the process, temperature and voltage conditions for calibration purposes.
• FIGURE 2 shows a difference between the output of the first delay line 102 and the second delay line 104 that may be used for coarse calibration in two different cases.
• Outputs from the first delay line 102 and the second delay line 104 in a fast-fast (FF) process corner are shown in a first case, 202.
• the delay of the active delay line in the FF corner is smaller than the delay of the passive line in the FF corner.
• the DFF array 108 sense six outputs (D[0] ...D[5]) from the first delay line 102 before the DFF array 108 receives the CLK output from the second delay line 104.
• the six outputs are latched in the DFF array 108 in response to the CLK.
• the latched outputs provide an encoded representation of the difference between active component delay and passive component delay in the FF process corner.
• Outputs from the first delay line 102 and the second delay line 104 in a slow-slow (SS) process corner are shown in a second case case, 204.
• the delay of the active delay line in the SS corner is longer smaller than the delay of the passive line in the SS corner.
• the DFF array 108 senses only one output (D[0]) from the first delay line 102 before the DFF array 108 receives the CLK output from the second delay line 104.
• the single outputs (D[0]) are latched in the DFF array 108 in response to the CLK.
• the latched outputs provide an encoded representation of the difference between active component delay and passive component delay in the SS process corner.
• an apparatus for wireless communication includes means for determining a delay difference between a first delay line of passive devices on a chip under calibration and a second delay line of active devices on the chip under calibration; and means for calibrating an on chip component based on the determined difference.
• the means for determining a delay difference and means for calibrating the on chip component may be the DFF array 108 for example.
• the aforementioned means may be any module or any apparatus configured to perform the functions recited by the aforementioned means.
• the apparatus 100 generates a calibration code extremely quickly and efficiently.
• the apparatus 106 is configured to receive an input and to generate a calibration code within a single cycle time of the input.
• the apparatus 100 may perform the disclosed delay calibration process continuously. This allows calibration to be performed even more efficiently without having to interrupt other processing tasks and without switching back and forth between the disclosed delay calibration process and other processing tasks.
• FIGURE 3 shows an exemplary wireless communication system 300 in which a configuration of the disclosed calibration method may be advantageously employed.
• FIGURE 3 shows three remote units 320, 330, and 350 and two base stations 340. It will be recognized that wireless communication systems may have many more remote units and base stations.
• Remote units 320, 330, and 350 include the calibration circuitry 325 A, 325B, and 325C, respectively.
• FIGURE 3 shows forward link signals 380 from the base stations 340 and the remote units 320, 330, and 350 and reverse link signals 390 from the remote units 320, 330, and 350 to base stations 340.
• the remote unit 320 is shown as a mobile telephone
• remote unit 330 is shown as a portable computer
• remote unit 350 is shown as a fixed location remote unit in a wireless local loop system.
• the remote units may be cell phones, hand-held personal communication systems (PCS) units, portable data units such as personal data assistants, or fixed location data units such as meter reading equipment.
• PCS personal communication systems
• FIGURE 3 illustrates remote units, which may employ calibration circuitry according to the teachings of the disclosure, the disclosure is not limited to these exemplary illustrated units. For instance, calibration circuitry according to configurations of the present disclosure may be suitably employed in any device.
• a method for of delay calibration is described with reference to FIGURE 4.
• a delay difference between an active device (delay line) and a passive device on a chip under calibration is determined.
• an on-chip component is calibrated based on the determined difference.
• the calibration outcome depends on the difference between active and passive devices. This design performs extremely well if the variation of these two types of device are almost perfectly correlated in the chip substrate material, e.g., silicon.
• the components to be calibrated can be designed based on the differences of active and passive devices so that impact from the imperfect correlations can be cancelled out.
• a ring oscillator to be calibrated can be designed to have its oscillation frequency depend on the differences between the delay of active and passive devices so that the impact from the imperfect correlation can be canceled out.
• a ring oscillator generally includes an odd number of inverter stages.
• FIGURE 5 shows an exemplary design of a single stage in a ring oscillator 500.
• the ring oscillator 500 includes inverter circuitry 502 and keeper circuitry 504.
• the keeper circuitry 504 includes resistors 506, 508.
• the ring oscillator 500 is designed to oscillate at around a desired frequency at the three primary process corners, i.e., the slow-slow (SS), the typical-typical (TT) corner and the fast-fast (FF) corners.
• Device models that are used for designing and analyzing circuitry such as the ring oscillator 500 generally assume that passive and active devices have perfect correlation. However, on an actual chip, the properties of the active and passive devices are not precisely the same as they are in the device models and do not have perfect correlation. For example, in an FF process corner, a passive resistor on a chip might be more resistive than a corresponding device model had predicted for the FF process corner. The larger than predicted difference between the passive and active devices could change the resulting calibration code and attempt to turn off additional legs in the oscillator and slow it down. However, because the effect of the keeper circuitry 504 is mainly determined by the passive resistors 506, 508, its increased resistance causes weaker keeper functionality.
• the keeper circuitry 504 is designed to offset the effect from the imperfect correlation and maintain the accuracy of the calibration results.
• FIGURE 6 is a block diagram illustrating a design workstation used for circuit, layout, and logic design of a semiconductor component, such as the calibration circuitry disclosed above.
• a design workstation 600 includes a hard disk 601 containing operating system software, support files, and design software such as Cadence or OrCAD.
• the design workstation 600 also includes a display 602 to facilitate design of a circuit 610 or a semiconductor component 612 such as the calibration circuitry.
• a storage medium 604 is provided for tangibly storing the circuit design 610 or the semiconductor component 612.
• the circuit design 610 or the semiconductor component 612 may be stored on the storage medium 604 in a file format such as GDSII or GERBER.
• the storage medium 604 may be a CD-ROM, DVD, hard disk, flash memory, or other appropriate device.
• the design workstation 600 includes a drive apparatus 603 for accepting input from or writing output to the storage medium 604.
• Data recorded on the storage medium 604 may specify logic circuit
• the data may further include logic verification data such as timing diagrams or net circuits associated with logic simulations.
• instructions may be used in implementing the methodologies described herein.
• software codes may be stored in a memory and executed by a processor unit.
• Memory may be implemented within the processor unit or external to the processor unit.
• the term "memory" refers to types of long term, short term, volatile, nonvolatile, or other memory and is not to be limited to a particular type of memory or number of memories, or type of media upon which memory is stored.
• the functions may be stored as one or more instructions or code on a computer-readable medium. Examples include computer- readable media encoded with a data structure and computer-readable media encoded with a computer program.
• Computer-readable media includes physical computer storage media.
• a storage medium may be an available medium that can be accessed by a computer.
• such computer-readable media can include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or other medium that can be used to store desired program code in the form of instructions or data structures and that can be accessed by a computer; disk and disc, as used herein, includes compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and blu-ray disc where disks usually reproduce data magnetically, while discs reproduce data optically with lasers. Combinations of the above should also be included within the scope of computer- readable media.
• instructions and/or data may be provided as signals on transmission media included in a communication apparatus.
• a communication apparatus may include a transceiver having signals indicative of instructions and data. The instructions and data are configured to cause one or more processors to implement the functions outlined in the claims.
• composition of matter means, methods and steps described in the specification.
• processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed that perform substantially the same function or achieve substantially the same result as the corresponding configurations described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.

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• Nonlinear Science (AREA)
• Semiconductor Integrated Circuits (AREA)
• Design And Manufacture Of Integrated Circuits (AREA)
• Pulse Circuits (AREA)

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• 2012
  • 2012-02-08 US US13/368,906 patent/US8680908B2/en not_active Expired - Fee Related
• 2013
  • 2013-01-17 JP JP2014553393A patent/JP2015511427A/ja active Pending
  • 2013-01-17 CN CN201380005672.5A patent/CN104054263B/zh not_active Expired - Fee Related
  • 2013-01-17 EP EP13704267.7A patent/EP2805416A1/en not_active Withdrawn
  • 2013-01-17 WO PCT/US2013/021836 patent/WO2013109688A1/en not_active Ceased
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• 2018
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