WO2013104202A1 - Amoled器件及制作方法 - Google Patents

Amoled器件及制作方法 Download PDF

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Publication number
WO2013104202A1
WO2013104202A1 PCT/CN2012/082718 CN2012082718W WO2013104202A1 WO 2013104202 A1 WO2013104202 A1 WO 2013104202A1 CN 2012082718 W CN2012082718 W CN 2012082718W WO 2013104202 A1 WO2013104202 A1 WO 2013104202A1
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Prior art keywords
layer
pixel electrode
region
forming
active
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PCT/CN2012/082718
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English (en)
French (fr)
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李延钊
王刚
王东方
姜春生
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京东方科技集团股份有限公司
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Publication of WO2013104202A1 publication Critical patent/WO2013104202A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means

Definitions

  • Embodiments of the present invention relate to an AMOLED device and a method of fabricating the same. Background technique
  • a thin film transistor (TFT) switching device In the preparation of an active matrix organic light emitting diode (AMOLED) device, a thin film transistor (TFT) switching device usually uses an amorphous silicon film as a channel layer material, but the intrinsic carrier mobility of amorphous silicon is low ( ⁇ 1 cm 2 ⁇ 1 ⁇ 1 ). Therefore, silicon films with high carrier mobility such as polysilicon and microcrystalline silicon are widely used to replace the amorphous silicon film as the channel layer material of the TFT device to meet the requirements of the rapidly developing organic light emitting display.
  • TFT thin film transistor
  • the inventors found that at least the following problems exist in the prior art:
  • the polysilicon film is only used as a channel layer material of the TFT device, and an indium tin oxide (ITO) material is used.
  • ITO indium tin oxide
  • the AMOLED device structure needs to separately deposit two films of silicon and ITO, and perform related photolithography and etching processes, which increases the process flow and manufacturing cost. Summary of the invention
  • Embodiments of the present invention provide an AMOLED device and a fabrication method for preparing an all-silicon-based AMOLED device, which reduces cost and increases yield.
  • an embodiment of the present invention provides a method for fabricating an AMOLED, including:
  • Pixel Electrode layer Performing a doping process on the active region and the pixel electrode region with the gate as a mask, so that the active region forms a source region, an active layer, and a drain region, so that the pixel electrode region is formed.
  • An organic light emitting diode is formed on the pixel electrode layer by a thin film deposition process.
  • an embodiment of the present invention provides an AMOLED device, including: a substrate; a source region, an active layer, a drain region, and a pixel electrode layer formed on the substrate; respectively formed on the source a source region and a drain electrode on the drain region, the drain electrode is electrically connected to the pixel electrode layer; a gate insulating layer formed on the source region, the active layer, and the drain region; a gate on the gate insulating layer; an organic light emitting diode formed over the pixel electrode layer.
  • Embodiments of the present invention provide an AMOLED device and a fabrication method thereof, by preparing an amorphous silicon material into a polysilicon layer on a buffer layer, and using a patterning process according to a desired pattern of the polysilicon layer, simultaneously forming an active region and a pixel electrode Zones, thereby producing an all-silicon-based AMOLED device, thereby reducing the patterning process, reducing costs and increasing throughput.
  • FIG. 1 is a schematic diagram of a process for fabricating an AMOLED according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram 2 of a process for fabricating an AMOLED according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram 3 of a process for fabricating an AMOLED according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram of a manufacturing process of an AMOLED provided by an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a process for fabricating an AMOLED according to an embodiment of the present invention
  • FIG. 6 is a schematic diagram 6 of a process for fabricating an AMOLED according to an embodiment of the present invention
  • FIG. 7 is a schematic diagram of a process for fabricating an AMOLED according to an embodiment of the present invention
  • FIG. 9 is a schematic diagram of a manufacturing process of an AMOLED according to an embodiment of the present invention
  • FIG. 10 is a schematic structural diagram of a fabricated AMOLED according to an embodiment of the present invention
  • Reference mark 1-substrate, 2-buffer layer, 3-amorphous silicon layer, 30-polysilicon layer, 301-active region, 302-pixel electrode region, 31-source region, active layer, drain region, 32- Pixel electrode layer (anode or cathode), 4-gate insulating layer, 5-gate, 6-source drain, 7-passivation layer, 8-pixel defining layer, 9-organic light-emitting diode, 91-hole transport layer , 92-organic light-emitting layer, 93-electron transport layer, 94-top electrode (translucent or semi-transmissive cathode, anode), 10-metal reflective layer.
  • Embodiments of the present invention provide a method of fabricating an AMOLED array substrate.
  • the array substrate includes a plurality of gate lines, a plurality of data lines, and a plurality of driving lines, the plurality of gate lines and a plurality of data lines crossing each other, thereby defining a plurality of pixel units; the plurality of driving lines may be parallel to A plurality of data lines are arranged, corresponding to pixel units of multiple columns (parallel to the data line direction).
  • each of the pixel units may include a switching transistor, a driving transistor, and an organic light emitting diode as a light emitting device.
  • the switching transistor is connected to the gate line and the data line as a switching element of the pixel unit; the driving transistor is controlled by the switching transistor, and one of the source and drain electrodes is connected to the driving line, and the other of the source and drain electrodes is connected to the organic light emitting diode.
  • Each of the pixel units may emit, for example, white light, red light, green light or blue light depending on the organic light-emitting material used in the organic light emitting diode. The following description is for a single pixel unit, and other pixel units are equally applicable.
  • One embodiment of the present invention provides a method of fabricating an AMOLED array substrate, including the following steps. These steps will be described in more detail below with reference to Figs.
  • a polysilicon layer 30 is formed on the substrate 1.
  • a polysilicon layer 30 is formed directly on the substrate 1.
  • the method further includes: depositing a buffer layer film on the substrate 1, and forming a buffer layer 2 by a patterning process; and then forming a non-depositive layer on the buffer layer 2 by a thin film deposition process
  • the crystalline silicon layer 3 is subjected to a crystallization process to form the polysilicon layer 30.
  • the substrate 1 may be any substrate of a transparent substrate, a ceramic substrate, a metal substrate, or the like, which is not limited in the present invention.
  • an amorphous silicon layer 3 is formed on the substrate 1 to cover the buffer layer 2.
  • a 50 nm thick amorphous silicon layer 3 can be deposited by a CVD method.
  • the amorphous silicon layer 3 of, for example, 5 nm to 500 nm thick may be deposited by the above method, which is not limited in the present invention.
  • the amorphous silicon layer 3 is dehydrogenated in an inert gas atmosphere, and then the amorphous silicon layer is subjected to a crystallization process by, for example, excimer laser crystallization to obtain a polycrystalline silicon layer 30.
  • the polysilicon layer 30 is subjected to a patterning process to form an active region 301 and a pixel electrode region 302.
  • the polysilicon layer 30 is subjected to photolithography and etching processes according to a desired pattern to form an active region 301 for a thin film transistor and a pixel electrode region 302 for a pixel electrode of a corresponding pixel region.
  • a gate insulating layer is formed on the active region by a deposition process and a patterning process.
  • a gate insulating film having a thickness of, for example, 100 nm to 150 nm may be deposited on the active region 301 and the pixel electrode region 302 by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • Layer 4 the material used for the gate insulating layer 4 may be SiN x or SiO 2 or the like.
  • the gate insulating layer 4 is patterned by a patterning process so as to remain only on the active region 301.
  • A4 Forming a gate on the substrate by a deposition process and a patterning process, wherein the gate is on a gate insulating layer on the active region.
  • a magnetron sputtering method may be used, in which a gate insulating layer is formed
  • a metal thin film layer having a thickness of 200 nm was prepared on the substrate 1 of 4.
  • the metal material of the metal thin film layer may be usually made of a metal such as molybdenum, aluminum, an aluminum-nickel alloy, a molybdenum-tungsten alloy, chromium, or copper, or a combination of layers of the above-mentioned materials.
  • a gate electrode 5 is formed on a certain region of the gate insulating layer 4 by a patterning process.
  • the electrode region 302 is doped such that the active region forms a source region, an active layer (channel region), and a drain region 31, so that the pixel electrode region forms the pixel electrode layer 32.
  • the gate 5, the active layer 31, the source region 31, and the drain region 31 are used to form a thin film transistor (TFT), and the active layer is located between the source and drain regions 31.
  • TFT thin film transistor
  • the active region and the pixel electrode region are subjected to a doping process using the gate 5 as a mask to form a source/drain region 31 and a pixel electrode layer 32.
  • the doping process is performed on the active region and the pixel electrode region, including performing p-doping or n-doping, and correspondingly forming a source-drain region 31 and a pixel electrode layer 32 of the thin film transistor after doping, the pixel Electrode layer 32 can serve as the anode or cathode of the OLED.
  • the polysilicon layer 3 ( 301 , 302 ) is p-doped or n-doped by using the gate 5 as a mask, and is subjected to rapid annealing treatment (RTA) activation in a rapid annealing furnace to form a source-drain region of the thin film transistor. 31 and forming a pixel electrode layer 32.
  • RTA rapid annealing treatment
  • the polarity of the pixel electrode layer 32 is usually the anode
  • the polysilicon layer 3 is n-doped
  • the polarity of the pixel electrode layer 32 is usually the cathode.
  • the polarity of the pixel electrode layer 32 may also be a cathode.
  • the polarity of the pixel electrode layer 32 may also be an anode.
  • the former is usually selected, and the present invention does not limit this.
  • A6 a source electrode 6 and a drain electrode 6 are formed by preparing a source metal electrode and a drain metal electrode in the source region and the drain region.
  • the source and drain electrodes 6 and the gate 5 are on the same layer and on both sides of the gate 5.
  • the drain 6 is electrically connected to the pixel electrode, and the source 6 is connected to the driving line (VDD line).
  • the gate insulating layer 4 is patterned to form via holes exposing the source region and the drain region of the active layer 31; then, a magnetron sputtering method may be used, A layer of source/drain metal film is prepared on the substrate 1 of the gate 5.
  • the metal material of the metal thin film layer may be generally made of a metal such as molybdenum, aluminum, titanium, molybdenum tungsten alloy, chromium, or copper, or a combination of layers of the above-mentioned materials.
  • the source/drain metal thin film layer is patterned by a patterning process, and a source electrode 6, a drain electrode 6, and a gate electrode 5 are formed in the source region, the drain region, and the channel region, respectively.
  • the source and drain electrodes 6 and the gate 5 are on the same layer and are located on both sides of the gate 5.
  • the drain 6 is electrically connected to the pixel electrode, and the source 6 is connected to the driving line (VDD line). That is, in this example, the formed thin film transistor is used as a driving transistor.
  • the drain 6 simultaneously overlaps the drain region of the active layer 31 and one side of the pixel electrode layer 32.
  • a passivation layer 7 is formed on the gate 5, the source 6, and the drain 6, for example, by a deposition process.
  • a passivation layer 7 having a thickness of, for example, 200 nm to 300 nm is deposited on the TFT region in a similar manner to the gate insulating layer 4, and the material thereof may be SiNx or Si0. 2 and so on. Then, the passivation layer 7 is patterned by a patterning process to expose the pixel electrode layer 32.
  • a pixel defining layer is formed on the passivation layer and the substrate by a patterning process.
  • an acrylic material or an organic resin material is deposited on the passivation layer 7 and photolithographically cured to form a pixel defining layer 8;
  • the pixel defining layer 8 may have a thickness of lum-2.5 um, preferably, the thickness It may be 1.5 um or 2 um, and the present invention is not limited thereto.
  • the pixel defining layer 8 is patterned to expose the pixel electrode layer 32 by a patterning process.
  • the passivation layer 7 and the pixel defining layer 8 can be patterned in the same patterning process to expose the pixel electrode layer 32.
  • An organic light emitting diode 9 is formed on 8.
  • an organic light emitting diode 9 is formed on the pixel defining layer 8 corresponding to the pixel electrode layer 32.
  • the hole transport layer 91, the organic light-emitting layer 92, the electron transport layer 93, and the top electrode 94 are sequentially formed by a thin film deposition process, thereby forming the organic light-emitting diode 9.
  • the configuration of the organic light emitting diode 9 is not limited to the above structure, and any suitable configuration in the art can be employed.
  • the surface of the portion of the polysilicon layer 30 forming the pixel electrode layer 32 needs to be processed to improve the polysilicon layer 30.
  • the polysilicon layer 30 may be treated by plasma, such as 3 ⁇ 4 , CF 4 plasma, liquid treatment such as HCl, HF, etc., or heat treatment such as annealing furnace annealing.
  • the polysilicon layer 30 may be processed in other ways, which is not limited in the present invention.
  • the surface of the polysilicon layer 30 may be passivated by a low-temperature thermal oxidation method to enhance its function as an anode of the organic light-emitting diode 9.
  • the following method 1 can be used.
  • the organic material and the thin metal layer of the cathode are thermally evaporated in an OLED/EL-organic metal film deposition high vacuum system; the hole transport layer 91 (about 170 ° C) is sequentially evaporated by thermal evaporation under a vacuum of lxlO- 5 Pa.
  • the organic light-emitting layer 92 and the electron transport layer 93 (about 190 ° C) and the light-transmissive cathode 94 about 900 ° C).
  • the hole transport layer 91 is made of NPB ( ⁇ , ⁇ '-diphenyl-fluorene-fluorene, bis(1-naphthyl)-1,1,diphenyl-4,4, which is about 30-70 nm thick. -diamine); electron transport layer 93 and organic light-emitting layer 92 are combined into one, using 8-hydroxyquinoline aluminum (A1Q) of about 30-70 nm thick; opaque cathode 94, LiF/Al layer, LiF The evaporation rate is 0.1 nm/s and the thickness is 5-10 nm; the thickness of the A1 layer is 100-300 nm.
  • the AMOLED device emits green light (the peak position of the illuminating wavelength is 522 nm), and the light-emitting mode is the bottom light.
  • the following method 2 can also be used. It is possible to deposit, for example, V 2 0 5 having a thickness of 5-10 nm as a hole injecting layer; the hole transporting layer 91 is made of 50 nm thick NPB (N, N,-diphenyl-NN, bis(1-naphthyl) -1,1,diphenyl-4,4,-diamine); the organic light-emitting layer 92 is performed by a sub-pixel region mask evaporation process, and the green, blue, and red pixel regions are respectively doped with phosphorescence
  • the host material of the material is, for example, 25 nm thick CBP: (ppy) 2 Ir(acac), CBP: FIrpic and CBP: Btp 2 Ir(acac); the electron transport layer 93 is made of, for example, 25 nm thick Bphen; the opaque cathode 94 For example, a Sm/Al layer of about 200 nm thick
  • the AMOLED device is full-color light-emitting, and the light-emitting mode is bottom light. It should be noted that, in the top electrode 94 of the method 1 and the method 2, when the pixel electrode layer is doped, the corresponding top electrode polarity is a cathode, and specifically, the method 1 and 2 are opaque reflective cathodes.
  • the following method 3 can also be used.
  • a metal Mg such as a thickness of 10 to 10 nm is deposited to form an electron injecting layer, which further reduces the surface work function of the polysilicon film layer; the electron transporting layer 93, the organic light emitting layer 92, and the empty The hole transport layer 91 is integrated, and MEH-PPV (poly[2-decyloxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene) is deposited by spin coating, for example, 80 nm; the anode 94 is made of V 2 0 5 /Au layer, the V 2 0 5 layer is, for example, 5-10 nm; the evaporation rate of Au is, for example, 1 nm/min, and the thickness of the obtained film is, for example, 15-30 nm.
  • the AMOLED device emits red light (the peak position of the illuminating wavelength is 565 nm), and the light output mode is ejector light. It should be noted that, in the top electrode 94 of the method 3, when the pixel electrode layer is n-doped, the corresponding top electrode polarity is an anode specific, and the method 3 is a light-transmitting anode.
  • the organic light-emitting layer 92 in the method 1, 2 or 3 may be doped with a phosphorescent material or may be doped His material, etc., the invention does not limit this.
  • the AMOLED device can form a monochromatic AMOLED or a full color AMOLED according to the material of the organic light emitting layer 92.
  • Monochrome AMOLED which can be monochromatic light such as green, red, and blue; full color is a combination of red, blue, and green.
  • For a full color AMOLED pixel units that emit light of different colors are combined with each other to achieve color display.
  • a hole injection layer or an electron injection layer may be formed between the pixel defining layer and the organic light emitting diode by a thin film deposition process before the hole transport layer 91 is formed in the method 2 or 3, or an electron blocking layer or a hole may be added. Barrier layer, etc.
  • the hole injection layer may be made of V 2 0 5 or may be made of other materials. The invention is not limited thereto.
  • the hole injection layer is located under the hole transport layer 91, and the electron injection layer is located at the electron.
  • the transfer layer 93 is between the top electrode 94.
  • the embodiment of the present invention uses a small molecular material as the organic layer structure, and the third embodiment uses a macromolecular polymer as the organic layer, but the present invention Not limited to this, other suitable materials may also be used.
  • the metal of 150 to 300 nm forms a metal reflective layer 10.
  • a metal A1 having a thickness of 150 nm to 300 nm is deposited to form a metal reflective layer 10.
  • the top emission structure of the AMOLED device is realized by forming the metal reflective layer 10.
  • the reflective layer 10 may be formed on the substrate 1 prior to the buffer layer 2, and then the buffer layer 2 is formed on the reflective layer 10 and further formed into other structures.
  • the patterning process is, for example, a photolithography patterning process, for example, including: coating a photoresist layer on the structure layer to be patterned, and exposing the photoresist layer using the mask to expose the light.
  • the dicing layer is developed to obtain a photoresist pattern, the structural layer is etched using a photoresist pattern, and then the photoresist pattern is optionally removed.
  • the patterning process can also be screen printing, ink jet printing methods, and the like.
  • Embodiments of the present invention provide a method for fabricating an AMOLED by forming an amorphous silicon material into a polysilicon layer on a substrate/buffer layer, and passing the polysilicon layer through a patterning process according to a desired pattern, simultaneously forming an active region and a pixel electrode.
  • the region thereby preparing an all-silicon-based AMOLED device, reduces the patterning process of the AMOLED device fabrication, reduces the manufacturing cost, and increases the yield.
  • Another embodiment of the present invention further provides an AMOLED device, as shown in FIG.
  • a substrate 1 comprising: a substrate 1; a substrate 1 having a source region 31, an active layer 31, a drain region 31, and the drain region
  • the connected pixel electrode layer 32, the source region 31 and the drain region 31 respectively have a source electrode 6 and a drain electrode 6 formed by a drain metal electrode and a source metal electrode; and are formed in the source region 31, the active layer 31, A gate insulating layer 4 on the drain region 31; a gate electrode 5 formed on the gate insulating layer 4, and an organic light emitting diode 9 formed over the pixel electrode layer 32.
  • the source region 31, the semiconductor active layer 31, the drain region 31, and the pixel electrode layer 32 are prepared from a polysilicon material by the same patterning process.
  • the source region 31, the active layer 31, the drain region 31, and the pixel electrode layer can be simultaneously formed in one patterning process. 32. This reduces the number of patterning processes, thereby reducing costs and increasing throughput.
  • the AMOLED device further includes: a buffer layer 2 between the substrate 1 and the source region, the active layer, the drain region 31, and the pixel electrode layer 32, and the pixel electrode layer 32
  • the pixel between the layer 9 and the organic light emitting diode defines a layer 8.
  • the pixel defining layer 8 is located on the entire substrate 1, and an opening is formed therein to expose the pixel electrode layer 32 of each pixel unit.
  • the organic light emitting diode further includes: a hole injection layer, a hole transport layer 91, a light emitting layer 92, an electron transport layer 93, an electron injection layer, and a top electrode 94, wherein the hole injection layer can be used with V 2 0 5 production, can also be made of other materials, the invention is not limited thereto.
  • the hole injection layer is located under the hole transport layer 91, and the electron injection layer is located between the electron transport layer 93 and the top electrode 94.
  • a metal reflective layer 10 of, for example, 150 to 300 nm thick may be formed on the other side of the substrate 1 on which the TFT region is formed.
  • a metal reflective layer 10 having a thickness of 150 to 300 nm is formed on the other side of the substrate 1 on which the TFT region is formed.
  • the metal light reflecting layer 10 is used to realize the ejector light structure of the AMOLED device.
  • Embodiments of the present invention provide an AMOLED device, wherein an amorphous silicon material is prepared as a polysilicon layer on a substrate/buffer layer, and a polysilicon layer is formed through a patterning process according to a desired pattern, and an active region and a pixel electrode region are simultaneously formed. Thereby, an all-silicon based AMOLED device is prepared. This reduces the number of patterning processes produced by AMOLED devices, reduces manufacturing costs, and improves The output.

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Abstract

本发明的实施例提供了一种AMOLED器件及制作方法，可降低成本提高产量。该方法包括：在基板上形成多晶硅层；对多晶硅层进行处理，形成有源区和像素电极区；在有源区上形成栅绝缘层；在基板上形成位于有源区上的栅绝缘层上的栅极；以栅极为掩膜对有源区和像素电极区进行掺杂工艺处理，以使所述有源区形成源极区、有源层、漏极区，使所述像素电极区形成像素电极层；通过薄膜沉积工艺在像素电极层对应的所述像素界定层上形成OLED器件。

Description

AMOLED器件及制作方法 技术领域
本发明的实施例涉及一种 AMOLED器件及制作方法。 背景技术
在制备有源阵列有机发光二极管 （AMOLED ) 器件时， 薄膜晶体管 ( TFT )开关器件通常釆用非晶硅薄膜作为沟道层材料， 但是非晶硅的本征 载流子的迁移率很低 ( < 1 cm2^1^1 ) 。 因而目前广泛釆用多晶硅以及微晶 硅等载流子迁移率较高的硅薄膜， 来取代非晶硅薄膜作为 TFT器件的沟道 层材料， 以满足目前迅速发展的有机发光显示的要求。
在实现上述技术方案的过程中， 发明人发现现有技术中至少存在如下 问题： 在制作 AMOLED器件过程中， 多晶硅薄膜只是作为 TFT器件的沟 道层材料， 釆用铟锡氧化物 （ITO ) 材料作为像素电极层材料， 这样， AMOLED器件结构需要分别沉积硅和 ITO两层薄膜， 并进行相关的光刻、 刻蚀工艺， 增加了工艺流程和制造成本。 发明内容
本发明的实施例提供一种 AMOLED器件及制作方法，用于制备全硅 基的 AMOLED器件， 降低成本提高产量。
根据本发明的一方面， 本发明实施例提供一种 AMOLED制作方法， 包括：
在基板的一面上形成多晶硅层；
对所述多晶硅层进行构图工艺处理， 形成有源区和像素电极区； 在所述有源区上形成栅绝缘层；
在所述栅绝缘层上形成栅极，其中，所述栅极位于所述有源区上的栅 绝缘层上；
以所述栅极为掩膜对所述有源区和像素电极区进行掺杂工艺处理，以 使所述有源区形成源极区、有源层、 漏极区， 使所述像素电极区形成像素 电极层；
在源极区、 漏极区上形成源极、 漏极；
通过薄膜沉积工艺在所述像素电极层上形成有机发光二极管。
根据本发明的另一方面， 本发明实施例提供一种 AMOLED器件， 包 括： 基板； 形成在所述基板的源极区、 有源层、 漏极区和像素电极层； 分 别形成在所述源极区、 漏极区上的源极、 漏极， 所述漏极与所述像素电极 层相电连接； 形成在所述源极区、 有源层、 漏极区上的栅绝缘层； 形成在 所述栅绝缘层上的栅极； 形成在所述像素电极层上方的有机发光二极管。
本发明实施例提供一种 AMOLED器件及制作方法，通过在緩冲层上 将非晶硅材料制备成多晶硅层，并将多晶硅层根据所需图形利用一次构图 工艺， 同时形成有源区和像素电极区， 从而制备出全硅基的 AMOLED器 件， 从而减少构图工艺， 降低成本提高产量。 附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图 作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实 施例， 而非对本发明的限制。
图 1为本发明实施例提供的 AMOLED的制作过程示意图一； 图 2为本发明实施例提供的 AMOLED的制作过程示意图二； 图 3为本发明实施例提供的 AMOLED的制作过程示意图三； 图 4为本发明实施例提供的 AMOLED的制作过程示意图四
图 5为本发明实施例提供的 AMOLED的制作过程示意图五； 图 6为本发明实施例提供的 AMOLED的制作过程示意图六； 图 7为本发明实施例提供的 AMOLED的制作过程示意图七； 图 8为本发明实施例提供的 AMOLED的制作过程示意图八； 图 9为本发明实施例提供的 AMOLED的制作过程示意图九； 图 10为本发明实施例提供的制作完成的 AMOLED的结构示意图； 图 11为本发明实施例提供的制作完成的 AMOLED的另一种结构示 意图。
附图标记： 1-基板， 2-緩冲层， 3-非晶硅层， 30-多晶硅层， 301-有源区， 302-像 素电极区， 31-源极区、 有源层、 漏极区， 32-像素电极层（阳极或阴极）， 4-栅绝缘层， 5-栅极， 6-源漏极， 7-钝化层， 8-像素界定层， 9-有机发光二 极管， 91-空穴传输层， 92-有机发光层， 93-电子传输层， 94-顶部电极（透 光或半透光阴极、 阳极） ， 10-金属反光层。 具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚， 下面将结合本 发明实施例的附图， 对本发明实施例的技术方案进行清楚、 完整地描述。 显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的 前提下所获得的所有其他实施例， 都属于本发明保护的范围。
本发明的实施例提供了一种 AMOLED阵列基板的制备方法。该阵列 基板包括多条栅线、多条数据线以及和多条驱动线，该多条栅线和彼此交 叉多条数据线， 由此定义了多个像素单元； 该多条驱动线可平行于多条数 据线设置， 分别对应于多列 （平行于数据线方向）的像素单元。 例如， 每 个像素单元可以包括开关晶体管、驱动晶体管和作为发光器件的有机发光 二极管。开关晶体管与栅线和数据线连接作为像素单元的开关元件； 驱动 晶体管受开关晶体管控制，并且其源漏电极之一接驱动线， 而源漏电极中 另一个接有机发光二极管。每个像素单元根据有机发光二极管所釆用的有 机发光材料的不同， 可以发出例如白光、 红光、 绿光或蓝光等。 下面的描 述仅针对单个像素单元， 而其他像素单元也同样适用。
本发明的一个实施例提供了一种 AMOLED阵列基板的制作方法， 包 括如下步骤。 下面将结合图 1〜图 10对这些步骤予以更详细的说明。
Al、 在基板 1上形成多晶硅层 30。
在一个示例中， 在基板 1上直接形成多晶硅层 30。 在另一个示例中， 形成多晶硅层 30前还包括： 在基板 1上沉积緩冲层薄膜， 并且通过构图 工艺形成緩冲层 2; 然后， 通过薄膜沉积工艺在所述緩冲层 2上形成非晶 硅层 3 , 对所述非晶硅层 3进行晶化工艺处理形成多晶硅层 30。
如图 1所示， 在基板 1上釆用化学气相沉积（CVD ) 方法沉积例如 200nm厚的緩冲薄膜， 然后利用该緩冲薄膜形成緩冲层 2。 所述基板 1可 以是透明基板、 陶瓷基板、金属基板等任一形式的基板， 本发明对此不作 限制。
如图 2所示， 在所述基板 1上形成非晶硅层 3以覆盖所述緩冲层 2。 示例性的， 可釆用 CVD方法沉积 50nm厚的非晶硅层 3。 可以用上 述方法沉积例如 5nm-500nm厚的非晶硅层 3 , 本发明对此不做限制。
如图 3所示， 将所述非晶硅层 3 , 在惰性气体氛围中进行脱氢， 之后 例如釆用准分子激光晶化方式将非晶硅层进行晶化工艺处理，得到多晶硅 层 30。
A2、 对所述多晶硅层 30进行构图工艺处理， 形成有源区 301和像素 电极区 302。
如图 4所示， 对所述多晶硅层 30根据所需图形进行光刻、 刻蚀工艺 处理，形成用于薄膜晶体管的有源区 301和用于相应像素区域的像素电极 的像素电极区 302。
A3、 如图 5所示， 通过沉积工艺和构图工艺处理在所述有源区上形 成栅绝缘层。
示例性的， 如图 5所示， 可以利用等离子增强化学汽相沉积（Plasma Enhanced Chemical Vapor Deposition, PECVD )法在有源区 301和像素电 极区 302上沉积厚度例如为 lOOnm至 150nm的栅极绝缘层 4, 通常栅绝 缘层 4使用的材料可以是 SiNx或 Si02等。
然后，通过构图工艺对栅极绝缘层 4进行构图，使其仅保留在有源区 301之上。
A4、 通过沉积工艺和构图工艺处理在所述基板上形成栅极， 其中， 所述栅极位于所述有源区上的栅绝缘层上。
示例性的， 如图 6所示， 可以使用磁控溅射方法， 在形成有栅绝缘层
4的基板 1上制备一层厚度 200nm的金属薄膜层。该金属薄膜层的金属材 料通常可以釆用钼、 铝、 铝镍合金、 钼钨合金、 铬、 或铜等金属， 也可以 使用上述几种材料薄膜的组合层结构。 然后， 通过构图工艺处理， 在栅极 绝缘层 4的一定区域上形成栅极 5。
A5、 以所述栅极 5为掩膜对所述有源区 301进行掺杂和同时对像素 电极区 302进行掺杂， 以使所述有源区形成源极区、 有源层（沟道区） 、 漏极区 31 , 使所述像素电极区形成像素电极层 32。 所述栅极 5、 有源层 31、 源极区 31、 漏极区 31用于形成薄膜晶体管 （TFT ) , 且有源层位于 源、 漏极区 31之间。
示例性的，如图 7所示， 以所述栅极 5为掩膜对所述有源区和像素电 极区进行掺杂工艺处理， 形成源漏极区 31和像素电极层 32。 这里， 对所 述有源区和像素电极区进行掺杂工艺处理， 包括进行 p掺杂或 n掺杂，掺 杂后相应地形成薄膜晶体管的源漏极区 31和像素电极层 32,该像素电极 层 32可作为 OLED的阳极或阴极。
以所述栅极 5为掩模对多晶硅层 3 ( 301、 302 )进行 p掺杂或 n掺杂， 并在快速退火炉中进行快速退火处理（RTA )活化， 形成薄膜晶体管的源 漏极区 31及形成像素电极层 32。 在对多晶硅层 3进行 p掺杂时， 通常像 素电极层 32的极性为阳极； 在对多晶硅层 3进行 n掺杂时， 通常像素电 极层 32的极性为阴极。 需要说明的是， 在对多晶硅层进行 p掺杂时， 像 素电极层 32的极性也可为阴极， 在对多晶硅层进行 n掺杂时， 像素电极 层 32的极性也可为阳极。但通常情况下选用前者，本发明对此不做限制。
A6、 在源极区、 漏极区通过制备源极金属电极和漏极金属电极形成 源极 6、 漏极 6。 所述源、 漏极 6与栅极 5位于同一层上且位于栅极 5两 侧， 例如， 漏极 6与像素电极电连接， 而源极 6则与驱动线（ VDD线 ) 连接。
示例性的， 如图 8所示， 首先， 对栅绝缘层 4构图以形成露出有源层 31 的源极区和漏极区的过孔； 然后， 可以使用磁控溅射方法， 在形成有 栅极 5的基板 1上制备一层源漏金属薄膜层。该金属薄膜层的金属材料通 常可以釆用钼、 铝、 钛、 钼钨合金、 铬、 或铜等金属， 也可以使用上述几 种材料薄膜的组合层结构。然后，用构图工艺对该源漏金属薄膜层进行构 图， 在源极区、 漏极区和沟道区中分别形成源极 6、 漏极 6和栅极 5。 所 述源、 漏极 6与栅极 5位于同一层上且位于栅极 5两侧， 例如， 漏极 6 与像素电极电连接， 而源极 6则与驱动线（VDD线）连接。 即， 在该示 例中， 所形成的薄膜晶体管作为驱动晶体管。 如图 8所示， 漏极 6同时与 有源层 31的漏极区以及像素电极层 32的一侧相重叠。 进一步地， 例如通过沉积工艺在所述栅极 5、 源极 6、 漏极 6上形成 钝化层 7。
示例性的， 如图 9示， 釆用和栅极绝缘层 4相类似的方法， 在所述 TFT区域上沉积一层厚度例如为 200nm到 300nm的钝化层 7 , 其材料可 以是 SiNx或 Si02等。 然后， 釆用构图工艺对该钝化层 7进行构图以露出 像素电极层 32。
进一步地， 通过构图工艺在所述钝化层及所述基板上形成像素界定 层。
如图 10所示， 在钝化层 7上沉积亚克力系材料或有机树脂材料并光 刻、 固化出像素界定层 8; 该像素界定层 8的厚度可以为 lum-2.5um, 优 选的， 该厚度可以为 1.5um或 2um, 本发明对此不做限制。 通过构图工 艺， 将该像素界定层 8构图以露出像素电极层 32。
在另一个实施例中 ,钝化层 7和像素界定层 8可以在同一构图工艺中 被构图以露出像素电极层 32。
A7、通过薄膜沉积工艺在所述像素电极层 32对应的所述像素界定层
8上形成有机发光二极管 9。
如图 10所示，在所述像素电极层 32对应的所述像素界定层 8上形成 有机发光二极管 9。 例如， 利用薄膜沉积工艺依次形成空穴传输层 91、有 机发光层 92、 电子传输层 93、顶部电极 94 (透光或半透光阴极或阳极）， 由此形成有机发光二极管 9。 有机发光二极管 9的构造不限于上述结构， 而可以釆用本领域任何适当的构造。
在一个示例中，在所述像素电极层对应的像素界定层 8上形成有机发 光二极管 9之前，需要对形成像素电极层 32的所述多晶硅层 30的部分的 表面进行处理，来改善多晶硅层 30的表面性能。所述多晶硅层 30可釆用 等离子体处理， 如 ¾、 CF4等离子体， 也可釆用液体处理如 HC1、 HF等， 还可釆用热处理如退火炉退火方式等。 对多晶硅层 30进行处理， 也可釆 用其他方式进行处理， 本发明对此不作限制。 例如， 还可以釆用低温热氧 化方法， 钝化多晶硅层 30的表面， 以增强其作为有机发光二极管 9的阳 极的功能。
可选的， 制备有机发光二极管部分时， 可以釆用下面的方法 1。 可以 将有机材料及阴极金属薄层在 OLED/EL-有机金属薄膜沉积高真空系统 中热蒸发蒸镀； 在 lxlO-5 Pa的真空下依次热蒸发蒸镀空穴传输层 91 (约 170 °C )、有机发光层 92及电子传输层 93 (约 190 °C )和透光阴极 94 (约 900 °C ) 。 例如， 空穴传输层 91用约 30-70纳米厚的 NPB ( Ν,Ν'-二苯基 -Ν-Ν，二 (1-萘基) -1,1，二苯基 -4,4，-二胺 )； 电子传输层 93和有机发光层 92 合二为一， 用约 30-70纳米厚的 8-羟基喹啉铝 （A1Q ) ； 不透光阴极 94 釆用 LiF/Al层， LiF的蒸发速率为 0.1 nm/s,厚度为 5-10 nm; A1层厚度为 100-300 nm。 该 AMOLED器件发绿光（发光的波长的峰位为 522nm ) , 出光方式为底出光。
可选的， 制备有机发光二极管部分时， 也可以釆用下面的方法 2。 可 以先沉积例如厚 5-10 nm的 V205作为空穴注入层； 空穴传输层 91釆用 50 纳米厚的 NPB(N, N，-二苯基 -N-N，二 (1-萘基) -1,1，二苯基 -4, 4，-二胺); 有机发光层 92釆用分像素区掩模蒸镀工艺进行， 绿光、 蓝光和红光像素 区分别釆用掺杂磷光材料的主体材料例如 25nm厚的 CBP: (ppy)2Ir(acac)、 CBP: FIrpic和 CBP: Btp2Ir(acac); 电子传输层 93釆用例如 25纳米厚的 Bphen; 不透光阴极 94用例如约 200纳米厚的 Sm/Al层。该 AMOLED器 件为全彩发光， 出光方式为底出光。 需要说明的是， 方法 1和方法 2中顶 部电极 94, 在像素电极层进行 掺杂时， 对应形成的顶部电极极性为阴 极， 具体的在方法 1、 2中为不透光的反射阴极。
可选的， 制备有机发光二极管部分时， 还可以釆用下面方法 3。 在已 进行 n型掺杂并活化的多晶硅像素区， 沉积例如 l-10 nm厚度的金属 Mg 形成电子注入层， 进一步降低多晶硅膜层的表面功函数； 电子传输层 93、 有机发光层 92和空穴传输层 91合为一体， 釆用旋涂方式沉积 MEH-PPV (聚 [2-曱氧基 -5-(2-乙基己氧基) -1,4-苯撑乙烯撑） ， 例如约 80 nm; 阳极 94釆用 V205/Au层， V205层厚度例如为 5-10 nm; Au的蒸发速率例如为 lnm/min, 所得到的薄膜的厚度例如为 15-30 nm。 该 AMOLED器件发红 光（发光的波长的峰位为 565 nm ) , 出光方式为顶出光。 需要说明的是， 方法 3中顶部电极 94, 在像素电极层进行 n掺杂时， 对应形成的顶部电 极极性为阳极具体的在方法 3中为透光阳极。
方法 1、 2或 3中的有机发光层 92中可以掺杂磷光材料，也可掺杂其 他材料等，本发明对此不做限制。所述 AMOLED器件根据有机发光层 92 材料的不同， 可以形成单色 AMOLED、全彩 AMOLED。单色 AMOLED, 可以为绿光、 红光、 蓝光等单色光； 全色为红光、 蓝光、 绿光的组合。 对 于全彩 AMOLED而言， 发不同颜色的光的像素单元彼此组合， 从而实现 彩色显示。
进一步地， 如方法 2或 3中在形成空穴传输层 91前可以利用薄膜沉 积工艺在像素界定层与有机发光二极管间形成空穴注入层或电子注入层， 也可以加入电子阻挡层、空穴阻挡层等。例如，空穴注入层可釆用 V205制 作， 也可用其他材料制作， 本发明对此不做限制， 具体的， 空穴注入层位 于空穴传输层 91的下层， 电子注入层位于电子传输层 93与顶部电极 94 间。
需要说明的是，在有机发光二极管 9的制作过程中，本发明实施例釆 用了小分子材料作为各有机层结构，实施例 3是釆用了大分子聚合物作为 有机层， 但本发明并不限于此， 也可以釆用其他适合的材料。
进一步地， 如图 11 所示， 在所述基板 1 的 TFT 区域的对侧涂布
150~300nm的金属形成金属反射层 10。
在基板 1的背面例如蒸镀 150nm到 300nm厚的金属 A1,形成金属反 射层 10。通过形成金属反射层 10来实现 AMOLED器件的顶层发光结构。
在另一个实施例中，反射层 10可以先于緩冲层 2形成于基板 1之上， 然后緩冲层 2形成在反射层 10上， 并进一步形成其他结构。
在本实施例之中， 构图工艺例如为光刻构图工艺， 例如包括： 在需要 被构图的结构层上涂覆光刻胶层，使用掩膜板对光刻胶层进行曝光，对曝 光的光刻胶层进行显影以得到光刻胶图案，使用光刻胶图案对结构层进行 蚀刻， 然后可选地去除光刻胶图案。 构图工艺还可以是丝网印刷、 喷墨打 印方法等。
本发明实施例提供一种 AMOLED制造方法， 通过在基板 /緩冲层上 将非晶硅材料制备成多晶硅层，并将多晶硅层根据所需图形通过一次构图 工艺， 同时形成有源区和像素电极区， 从而制备出全硅基的 AMOLED器 件， 减少了 AMOLED器件制作的构图工艺， 降低了制作成本， 提高了产 量。 本发明另一个实施例还提供了一种 AMOLED器件， 如图 10所示， 包括： 基板 1 ; 基板 1上具有源极区 31、 有源层 31、 漏极区 31和与所述 漏极区连接的像素电极层 32, 源极区 31、漏极区 31上分别具有漏极金属 电极和源极金属电极形成的源极 6、漏极 6;形成在源极区 31、有源层 31、 漏极区 31上的栅绝缘层 4; 形成在栅绝缘层 4上的栅极 5、形成在像素电 极层 32上方形成有机发光二极管 9。
此处， 所述源极区 31、 半导体有源层 31、 漏极区 31、 像素电极层 32 通过同一构图工艺由多晶硅材料制备。 这样在制作 AMOLED的源极区、 有源层、 漏极区 31 , 像素电极层 32时就可以在一次构图工艺中同时形成 源极区 31、 有源层 31、 漏极区 31和像素电极层 32。 这减少了构图工艺 的次数， 从而降低成本， 提高产量。
进一步地，所述 AMOLED器件还包括：在所述基板 1和所述源极区、 有源层、漏极区 31以及像素电极层 32之间的緩冲层 2以及在所述像素电 极层 32和有机发光二极管 9层之间的像素界定层 8。 所述像素界定层 8 位于整个基板 1上，并且其中形成有开口以露出每个像素单元的像素电极 层 32。
进一步地， 所述有机发光二极管还包括： 空穴注入层、 空穴传输层 91、 发光层 92、 电子传输层 93、 电子注入层、 顶部电极 94, 其中， 空穴 注入层可釆用 V205制作， 也可用其他材料制作， 本发明对此不做限制。 空穴注入层位于空穴传输层 91 的下层， 电子注入层位于电子传输层 93 与顶部电极 94间。
进一步地，如图 11所示，在所述基板 1的形成 TFT区域的另一侧上， 还可以形成有例如 150~300nm厚的金属反射层 10。
通过在所述基板 1的形成 TFT区域的另一侧上， 形成有 150~300nm 厚的金属反射层 10。 利用金属反射层 10来实现 AMOLED器件的顶出光 结构。
本发明实施例提供一种 AMOLED 器件， 通过在基板 /緩冲层上将非 晶硅材料制备成多晶硅层， 并将多晶硅层根据所需图形通过一次构图工 艺，同时形成有源区和像素电极区，从而制备出全硅基的 AMOLED器件。 这减少了 AMOLED器件制作的构图工艺的次数， 降低了制作成本， 提高 了产量。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护 范围， 本发明的保护范围由所附的权利要求确定。

Claims

权利要求书
1、一种有源阵列有机发光显示（AMOLED )器件的制作方法， 包括： 在基板的一面上形成多晶硅层；
对所述多晶硅层进行构图工艺处理， 形成有源区和像素电极区； 在所述有源区上形成栅绝缘层；
在所述栅绝缘层上形成栅极，其中，所述栅极位于所述有源区上的栅 绝缘层上；
以所述栅极为掩膜对所述有源区和像素电极区进行掺杂工艺处理，以 使所述有源区形成源极区、有源层、 漏极区， 使所述像素电极区形成像素 电极层；
在源极区、 漏极区上形成源极、 漏极；
通过薄膜沉积工艺在所述像素电极层上形成有机发光二极管。
2、 根据权利要求 1所述的制作方法， 其中， 在所述基板上形成多晶 硅层之前还包括：在基板上沉积緩冲层薄膜，并通过构图工艺形成緩冲层； 所述在基板上形成多晶硅层包括：
通过薄膜沉积工艺在所述緩冲层上形成非晶硅层；
对所述非晶硅层进行晶化工艺处理形成多晶硅层。
3、 根据权利要求 1或 2所述的制作方法， 其中， 对所述有源区和像 素电极区进行掺杂工艺处理包括：
对所述有源区和像素电极区进行 p掺杂或 n掺杂工艺处理。
4、 根据权利要求 1-3任一所述的制作方法， 所述方法还包括： 在所述栅极、 源极、 漏极及所述像素电极层上形成所述像素界定层， 将所述像素界定层构图以露出所述像素电极层。
5、 根据权利要求 1-4任一所述的制作方法， 所述方法还包括： 在所述栅极、 源极、 漏极上形成钝化层， 然后在所述钝化层和所述像 素电极层上形成所述像素界定层。
6、 根据权利要求 1-5任一所述的制作方法， 其中， 通过薄膜沉积工 艺在所述像素电极层上形成有机发光二极管包括：
在所述像素电极层上制作空穴传输层； 在所述空穴传输层上形成发光层；
在所述发光层上形成电子传输层；
在所述电子传输层上制作顶部电极。
7、 根据权利要求 6所述的制作方法， 还包括： 在制作空穴传输层前 在所述像素电极层上制作空穴注入层；
在制作顶部电极时， 在所述电子传输层上制作电子注入层。
8、 根据权利要求 1-7任一所述的制作方法， 还包括：
在所述基板的另一面上涂布反射金属层。
9、 一种有源阵列有机发光显示 （AMOLED ) 器件， 包括： 基板；
形成在所述基板的源极区、有源层、漏极区和与所述漏极区连接的像 素电极层；
分别形成在所述源极区、 漏极区上的源极、 漏极， 所述漏极与所述像 素电极层相电连接；
形成在所述源极区、 有源层、 漏极区上的栅绝缘层；
形成在所述栅绝缘层上的栅极；
形成在所述像素电极层上方的有机发光二极管。
10、 根据权利要求 9所述的 AMOLED器件， 还包括：
在所述基板和所述源极区、有源层、漏极区以及像素电极层之间的緩 冲层。
11、 根据权利要求 9或 10所述的 AMOLED器件， 还包括： 在所述像素电极层和所述有机发光二极管之间的像素界定层。
12、 根据权利要求 9-11任一所述的 AMOLED器件， 其中， 所述有 机发光二极管包括： 空穴注入层、 空穴传输层、 发光层、 电子传输层、 电 子注入层、 顶部电极。
13、 根据权利要求 9-12任一所述的 AMOLED器件， 还包括： 在所述基板的另一面上形成有金属反射层。
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CN102655118A (zh) * 2012-01-10 2012-09-05 京东方科技集团股份有限公司 一种amoled器件及制作方法
CN103219463B (zh) * 2013-04-08 2015-09-02 上海和辉光电有限公司 有机电子发光器件及其制造方法
CN103700663B (zh) * 2013-12-12 2016-09-07 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
CN103681766B (zh) * 2013-12-13 2016-08-31 京东方科技集团股份有限公司 一种有机发光二极管以及显示面板和显示装置
CN105304719B (zh) * 2014-07-18 2020-04-14 上海和辉光电有限公司 柔性薄膜晶体管及其制造方法
CN107068613A (zh) * 2016-12-30 2017-08-18 深圳市华星光电技术有限公司 Oled显示装置的阵列基板及其制作方法
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101145564A (zh) * 2005-11-25 2008-03-19 香港科技大学 有源矩阵显示基板制备方法
CN102201443A (zh) * 2010-03-24 2011-09-28 三星移动显示器株式会社 基底、制造基底的方法及有机发光显示装置
CN102270656A (zh) * 2010-06-04 2011-12-07 三星移动显示器株式会社 有机发光二极管显示器及其制造方法
CN102629671A (zh) * 2012-04-25 2012-08-08 上海大学 硅基微显示器的有机电致发光器件制备方法
CN102655118A (zh) * 2012-01-10 2012-09-05 京东方科技集团股份有限公司 一种amoled器件及制作方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060103299A1 (en) * 2004-11-15 2006-05-18 The Hong Kong University Of Science And Technology Polycrystalline silicon as an electrode for a light emitting diode & method of making the same
US8329523B2 (en) * 2009-05-15 2012-12-11 Lg Display Co., Ltd. Array substrate for dislay device and method of fabricating the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101145564A (zh) * 2005-11-25 2008-03-19 香港科技大学 有源矩阵显示基板制备方法
CN102201443A (zh) * 2010-03-24 2011-09-28 三星移动显示器株式会社 基底、制造基底的方法及有机发光显示装置
CN102270656A (zh) * 2010-06-04 2011-12-07 三星移动显示器株式会社 有机发光二极管显示器及其制造方法
CN102655118A (zh) * 2012-01-10 2012-09-05 京东方科技集团股份有限公司 一种amoled器件及制作方法
CN102629671A (zh) * 2012-04-25 2012-08-08 上海大学 硅基微显示器的有机电致发光器件制备方法

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