WO2013103734A2 - Utilisation du volume avant de haut-parleur - Google Patents

Utilisation du volume avant de haut-parleur Download PDF

Info

Publication number
WO2013103734A2
WO2013103734A2 PCT/US2013/020165 US2013020165W WO2013103734A2 WO 2013103734 A2 WO2013103734 A2 WO 2013103734A2 US 2013020165 W US2013020165 W US 2013020165W WO 2013103734 A2 WO2013103734 A2 WO 2013103734A2
Authority
WO
WIPO (PCT)
Prior art keywords
image sensor
light
sensor die
image
cover
Prior art date
Application number
PCT/US2013/020165
Other languages
English (en)
Other versions
WO2013103734A3 (fr
Inventor
Sawyer I. Cohen
Christopher Wilk
Ruchir M. Dave
Original Assignee
Apple, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/343,606 external-priority patent/US9154869B2/en
Priority claimed from US13/344,486 external-priority patent/US20130175650A1/en
Application filed by Apple, Inc. filed Critical Apple, Inc.
Publication of WO2013103734A2 publication Critical patent/WO2013103734A2/fr
Publication of WO2013103734A3 publication Critical patent/WO2013103734A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • Embodiments of the invention relate to the field of electronic image sensors; and more specifically, to electronic image sensors with means for attenuating spurious reflected light.
  • Electronic image sensors allow images to be captured in electronic form. Such sensors replace film in digital cameras and allow a camera function to be added to a variety of electronic devices such as cellular telephones, computers, and personal digital assistants.
  • Image sensors are generally provided in the form of image sensor assemblies. The light that forms the image must fall on a light receiving surface of an image sensor die to capture the image.
  • the image sensor die is provided in a package that is covered by a material that allows the image forming light to pass through to the light receiving surface.
  • An image sensor assembly may include the image forming optics or may provide the image sensor to be used with external optics.
  • the image sensor die is often attached adjacent to a lower end of a cavity in the package.
  • the cavity will often have vertical walls adjacent the image sensor die. Light can strike these vertical walls and be reflected onto the light receiving surface of the image sensor die and degrade the image. This reflected light may cause stray light to be cast toward the edge of the image.
  • An image sensor assembly includes an image sensor die attached adjacent to a cavity and a lower surface in a preformed package, such as a ceramic member, having substantially vertical surfaces extending from the lower surface to an upper surface of the package.
  • the image sensor die may include a charge-coupled device or an active pixel sensor imager that provides the light receiving surface for capturing the image.
  • a cover is placed over the upper surface of the package.
  • the cover may be a glass cover or an infrared cut filter.
  • a light absorbing layer is applied to the cover in registry with the image sensor die such that the light absorbing layer prevents light from falling on the substantially vertical surfaces of the preformed package without preventing the passage of light that falls on the light receiving surface of the image sensor die.
  • FIG. 1 is an exploded view of an image sensor assembly that embodies the invention.
  • FIG. 2 is an assembled view of the image sensor assembly of Figure 1 .
  • FIG. 3 is a section view of the image sensor assembly along line 2-2 of Figure 2.
  • FIG. 4 is a section view of another image sensor assembly that embodies the invention.
  • FIG. 5 is a section view of an image sensor assembly that embodies the invention assembled with imaging optics.
  • FIG. 8 is a section view of yet another image sensor assembly that embodies the invention.
  • FIG. 1 shows an exploded view of an image sensor assembly 100 that embodies the invention.
  • FIG. 2 shows an assembled view of the image sensor assembly of Figure 1 .
  • FIG. 3 is a section view of the image sensor assembly along line 2-2 of Figure 2.
  • the assembly 100 includes a package 102, which may be a preformed ceramic member, that includes a cavity 104 having substantially vertical surfaces 106 extending from a lower surface 109 to an upper surface 108 of the package.
  • An image sensor die 110 is attached to the package 102 adjacent the cavity 104 and the lower surface of the package.
  • the image sensor die 1 10 has a light receiving surface 1 12 for capturing an image.
  • the image sensor die 1 10 may include a charge-coupled device or an active pixel sensor imager that provides the light receiving surface 112 for capturing the image.
  • the package 102 will typically provide external electrical connections 1 14, such as pins, a ball grid array, or surface mount connections, that are electrically coupled 1 16 to the image sensor die 1 10.
  • a cover 120 is placed over the upper surface 108 of the package 102. Placed over the upper surface of the package should be understood to mean placed adjacent the surface of the package that is closest to the image forming optics.
  • the cover 120 may be placed in a recess 122 in the top of the package 102 such that the top surface of the cover is flush with or somewhat recessed from the uppermost surface of the package.
  • the cover 120 is generally spaced apart from the image sensor die 1 10.
  • the cover 120 may be a glass cover that allows image forming light to pass through to the image sensor, an infrared cut filter that prevents infrared radiation from passing through to the image sensor, or other material that seals the cavity 104 of the package 102 while allowing image forming light to fall on the light receiving surface 1 12 of the image sensor die 1 10.
  • a light absorbing layer 124 is applied to the cover in registry with the image sensor die 1 10. The light absorbing layer 124 prevents light from falling on the substantially vertical surfaces 106 of the cavity 104 of the package 102 without preventing the passage of light that falls on the light receiving surface 1 12 of the image sensor die 110.
  • the light absorbing layer 124 attenuates light that could reflect onto the light receiving surface 112 of the image sensor die 110 and degrade the image formed. [0019] it is important that the light absorbing iayer 124 be accurately aligned with the light receiving surface 1 12 of the image sensor die 1 10 so that the captured image is not affected by the light absorbing Iayer. It is desirable that the light absorbing Iayer 124 be closely fit to the light receiving surface 1 12 to that the image sensor die 1 10 can be close to the vertical walls 106 to keep the package 102 compact. Since the light receiving surface 112 is normally accurately located on the.
  • the light absorbing Iayer 124 is applied to the cover in registry with the image sensor die 1 10 within one hundred microns and more preferably within forty microns. Registry of the light absorbing Iayer with the image sensor die within a given distance means that distance between the optical axes of the two components is no greater than the given distance. It also important that the light absorbing Iayer and the image sensor die be aligned closely with regard to rotational displacements.
  • the light absorbing Iayer may be a photo resist material with the boundaries established by optical techniques, precision ink jet printing, or other techniques that allow the light absorbing Iayer to be applied to the cover with highly accurate positioning. While the light absorbing Iayer 124 is shown not extending to the edges of the cover 120 to allow the light absorbing Iayer to be seen more clearly, it is preferable that the light absorbing Iayer extend to the edges of the cover to block all light except that which passes through the central opening in the light absorbing Iayer.
  • FIG. 4 shows a section view of another image sensor assembly 400 that embodies the invention.
  • the image sensor assembly 400 includes an image sensor die 410 attached to a floor at a lower end of a cavity 404 in a preformed package 402 having substantially vertical surfaces 406 extending from the floor to an upper surface 408 of the package.
  • a cover 420 is placed over the upper surface 408 of the package 402. In this embodiment the bottom surface of the cover is attached to the upper surface of the package without use of a recess to receive the cover.
  • a light absorbing Iayer 424 is applied to the cover 420 in registry with the image sensor die 410 such that the light absorbing Iayer prevents light from falling on the substantially vertical surfaces 406 of the preformed package 402 without preventing the passage of light that falls on the light receiving surface 412 of the image sensor die.
  • the light absorbing layer 424 extends to the edges of the cover 420.
  • FIG. 5 shows a section view of an image sensor assembly that embodies the invention assembled with imaging optics.
  • the image sensor assembly 500 includes an image sensor die 510 attached to a floor at a lower end of a cavity 504 in a preformed package 502 having substantially vertical surfaces 506 extending from the floor to an upper surface 508 of the package.
  • An imaging optics assembly 530 that includes one or more lenses 532 is attached to the upper surface 508 of the image sensor package 502.
  • a cover 520 is placed in a recess in the imaging optics assembly 530 attached to the upper surface of the image sensor package 502 as part of the imaging optics assembly.
  • a light absorbing layer 524 is applied to the cover 520.
  • the light absorbing layer is on the surface of the cover closest to the image sensor die 510.
  • the imaging optics assembly 530 is assembled to the image sensor package 502 in registry with the image sensor die 510.
  • the light absorbing layer 524 is also in registry with the image sensor die 510 such that the light absorbing layer prevents light from falling on the substantially vertical surfaces 506 of the preformed package 502 without preventing the passage of light that falls on the light receiving surface 512 of the image sensor die.
  • FIG. 6 shows a section view of yet another image sensor assembly 600 that embodies the invention.
  • This image sensor assembly 600 uses flip chip construction, also known as Controlled Collapse Chip Connection (C4), to attach an image sensor die 610 to a preformed package 602.
  • the preformed package 602 defines a cavity 604 having substantially vertical surfaces 606 extending from a lower surface 609 to an upper surface 608 of the package.
  • the image sensor die 610 is coupled to the preformed package 602 both mechanically and electrically by conductive bonds 616, such as solder bumps on the image sensor die that are re-melted to produce an electrical connection to the preformed package.
  • the preformed package 602 provides an electrical connection from the conductive bonds 616 to external electrical connections 614, such as a ball grid array, pins, or surface mount connections.
  • the flip chip construction allows the image sensor assembly 600 to be more compact than the wire bond construction previously illustrated. However, is also results in the substantially vertical surfaces 606 of the cavity 604 being closer to the light receiving surface 612 of the image sensor die 610.
  • a cover 620 is placed over the upper surface 608 of the package 602.
  • a light absorbing layer 624 is applied to the cover 620 in registry with the image sensor die 610 such that the light absorbing layer prevents light from falling on the substantially vertical surfaces 606 of the preformed package 602 without preventing the passage of light that falls on the light receiving surface 612 of the image sensor die.
  • An upper housing 630 may also be placed over the upper surface 608 of the package 602 to provide mechanical protection for the cover 620.

Abstract

L'invention concerne un système de capteur d'image comprenant une puce de capteur d'image fixée à proximité d'une cavité et d'une surface inférieure dans un emballage préformé possédant des surfaces essentiellement verticales s'étendant de la surface inférieure vers une surface supérieure de l'emballage. La puce de capteur d'image peut comprendre un dispositif à couplage de charge ou un imageur de capteur de pixel actif qui définit la surface de réception de lumière pour capturer l'image. Un cache est placé sur la surface supérieure de l'emballage. Le cache peut être un cache en verre ou un filtre coupant les infrarouges. Une couche absorbant la lumière est appliquée sur le cache en registre par rapport à la puce de capteur d'image de sorte que la couche absorbant la lumière empêche la lumière de tomber sur les surfaces essentiellement verticales de l'emballage préformé sans empêcher le passage de la lumière qui tombe sur la surface de réception de lumière de la puce de capteur d'image.
PCT/US2013/020165 2012-01-04 2013-01-03 Utilisation du volume avant de haut-parleur WO2013103734A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/343,606 US9154869B2 (en) 2012-01-04 2012-01-04 Speaker with a large volume chamber and a smaller volume chamber
US13/343,606 2012-01-04
US13/344,486 US20130175650A1 (en) 2012-01-05 2012-01-05 Cover for image sensor assembly with light absorbing layer
US13/344,486 2012-01-05

Publications (2)

Publication Number Publication Date
WO2013103734A2 true WO2013103734A2 (fr) 2013-07-11
WO2013103734A3 WO2013103734A3 (fr) 2015-06-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/020165 WO2013103734A2 (fr) 2012-01-04 2013-01-03 Utilisation du volume avant de haut-parleur

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WO (1) WO2013103734A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017076962A (ja) * 2015-10-06 2017-04-20 サウンド、ソリューションズ、インターナショナル、カンパニー、リミテッドＳｏｕｎｄ Ｓｏｌｕｔｉｏｎｓ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｃｏ．， Ｌｔｄ． 電気音響変換器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5865935A (en) * 1995-02-02 1999-02-02 Eastman Kodak Company Method of packaging image sensors
US6380572B1 (en) * 1998-10-07 2002-04-30 California Institute Of Technology Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate
US6759266B1 (en) * 2001-09-04 2004-07-06 Amkor Technology, Inc. Quick sealing glass-lidded package fabrication method
US6995462B2 (en) * 2003-09-17 2006-02-07 Micron Technology, Inc. Image sensor packages
JP2007053183A (ja) * 2005-08-17 2007-03-01 Fujifilm Corp 固体撮像素子
CN100531308C (zh) * 2005-12-02 2009-08-19 鸿富锦精密工业（深圳）有限公司 数码相机模组
CN101919256B (zh) * 2008-11-19 2013-05-29 松下电器产业株式会社 图像拍摄装置

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