WO2013088945A1 - Structure de section de collage, procédé de collage associé, et composant électronique - Google Patents

Structure de section de collage, procédé de collage associé, et composant électronique Download PDF

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Publication number
WO2013088945A1
WO2013088945A1 PCT/JP2012/080511 JP2012080511W WO2013088945A1 WO 2013088945 A1 WO2013088945 A1 WO 2013088945A1 JP 2012080511 W JP2012080511 W JP 2012080511W WO 2013088945 A1 WO2013088945 A1 WO 2013088945A1
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WIPO (PCT)
Prior art keywords
metal film
substrate
recess
width
bonding
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Application number
PCT/JP2012/080511
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English (en)
Japanese (ja)
Inventor
小也香 内藤
田中　純一
真良 塩▲崎▼
冨実ニ 相田
和哉 川井
知範 積
相烈 李
大道 内田
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オムロン株式会社
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Publication date
Application filed by オムロン株式会社 filed Critical オムロン株式会社
Priority to DE112012005288.9T priority Critical patent/DE112012005288B4/de
Publication of WO2013088945A1 publication Critical patent/WO2013088945A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0172—Seals
    • B81C2203/019—Seals characterised by the material or arrangement of seals between parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a structure of a joint, a joining method thereof, and an electronic component. More specifically, the present invention relates to a structure of a bonding portion in a MEMS electronic component manufactured using a MEMS manufacturing technique and a bonding method thereof.
  • MEMS electronic components are characterized by a very small size.
  • FIG. 1A and FIG. 1B are schematic cross-sectional views showing the structure of the joint portion in the electronic component as described above.
  • FIG. 1A shows a state before joining
  • FIG. 1B shows a state after joining.
  • an insulating film 12 is formed on the upper surface of the base substrate 11, and a metal film 13 is formed on the upper surface along the junction.
  • a bonding material 14 such as solder is fixed to the upper surface of the metal film 13 with a width smaller than the width of the metal film 13.
  • An insulating film 16 is formed on the lower surface of the cover substrate 15, and a metal film 17 is formed on the lower surface along the joint.
  • the metal film 17 is placed on the bonding material 14, and the bonding portion 14 is heated and pressed to melt the bonding material 14 and melt.
  • the bonding material 14 is spread between the metal films 13 and 17. As a result, the bonding material 14 melts and becomes a eutectic state, and the metal films 13 and 17 are bonded to each other by the bonding material 14.
  • FIG. 1B shows an ideal bonding state.
  • the bonding material 14 spreads over almost the entire metal films 13 and 17 and does not protrude outside the metal films 13 and 17.
  • the bonding material 14 may overflow from the metal films 13 and 17.
  • the bonding material 14 that has flowed into the element housing space touches the circuit wiring provided on the base substrate 11 to short-circuit the electric circuit or inhibit the function of the sensor (element). Malfunctions occur.
  • the pressure applied to the joint is too small, the amount of the bonding material 14 fixed to the upper surface of the metal film 13 is too small, or the viscosity of the molten bonding material 14 is high, as shown in FIG. 1D. Further, the bonding area of the metal films 13 and 17 becomes small, or the bonding material 14 does not have a eutectic composition, so that the bonding strength is weakened. Moreover, there exists a possibility that joining may become inadequate or incomplete, and an airtight sealing cannot be performed in a junction part.
  • the distance between the substrates is reduced as shown in FIG. 1C due to variations in the pressure applied to the joint, the amount of the joining material 14, the viscosity of the joining material 14, and the like, as shown in FIG. 1D.
  • the distance between the substrates becomes large, it cannot be used for applications where the requirements regarding the distance between the substrates after bonding are severe.
  • the height of the element accommodating space is also reduced, and there is a concern that the elements mounted on the base substrate 11 come into contact with the cover substrate 15.
  • Patent Document 1 discloses a bonding structure between substrates in a functional element package. This junction structure is shown in FIGS. 2A-2D.
  • a pair of recesses 18 are formed in parallel on the upper surface of the base substrate 11, and an insulating film 12 is formed on the upper surface of the base substrate 11 and the inner surface of the recess 18.
  • a metal film 13 is provided on the entire inner surface of the recess 18 and on the upper surface of the partition portion 19 located between the recesses 18.
  • An insulating film 16 is formed on the lower surface of the cover substrate 15, and the metal film 17 is provided in a region wider than the width K of the region covering both the concave portions 18.
  • a bonding material 14 (solder) having a width wider than that of the partition portion 19 located between the recesses 18 is provided on the lower surface of the central portion of the metal film 17.
  • the cover substrate 15 is overlaid on the base substrate 11 as shown in FIG. 2A, and the joining material 14 is brought into contact with the upper surface of the partition portion 19 as shown in FIG. Is heated and pressurized.
  • the joint is heated and pressurized, as shown in FIG. 2C, the molten joining material 14 flows into the respective recesses 18 along the side surfaces of the both recesses 18, and the air in the recesses 18 gradually replaces the joining material 14.
  • the metal film 13 and the metal film 17 are bonded by the bonding material 14 filled in the recess 18.
  • the metal film 13 is formed on the entire inner surface of the recess 18, the wettability of the joint material 14 in the recess 18 is improved, and the joint material 14 is 18 can be easily introduced.
  • the width of the metal film 17 provided on the lower surface of the cover substrate 15 is wider than the width K of the region covering both the recesses 18, and the end of the metal film 17 extends outside the end of the recess 18. Therefore, the bonding material 14 easily spreads in the width direction due to wettability with the metal film 17.
  • the entire interior of the recess 18 is filled with the bonding material 14, and the hermetic sealing at the sealing portion can be performed reliably, and the bonding strength is also ensured.
  • the width of the metal film 17 provided on the lower surface of the cover substrate 15 is wider than the width K of the region covering both the recesses 18.
  • the end portion extends outside the end of the recess 18.
  • the end of the metal film 13 formed in the recess 18 also extends to the outside of the recess 18. Therefore, the molten bonding material 14 spreads outside the recess 18 due to wettability with the metal film 17 (see FIG. 2D), excessive pressure is applied between the substrates 11 and 15, or the amount of the bonding material 14 is excessive. If there is, the bonding material 14 held between the end of the metal film 13 and the end of the metal film 17 scatters in a direction parallel to the substrate. If the bonding material 14 is scattered in this manner, the bonding material 14 may adhere to an element housed in the functional package and cause malfunction, or may adhere to circuit wiring and cause a short circuit.
  • the bonding material 14 melted along the metal film 13 spreads in the recesses 18, while the bonding material 14 melted in the lateral direction spreads along the metal film 17 (FIG. 2C). reference). Therefore, the gap between the end of the metal film 13 and the end of the metal film 17 is airtightly closed by the bonding material 14 spreading along the metal film 17, and voids 20 (bubbles) are left in the recesses 18 ( (See FIG. 2D). If the void 20 remains in the bonding material 14 re-cured in this way, when the reliability test is performed, the bonding material 14 has a difference between the pressure inside the void 20 and the pressure around the bonding material 14. There is a possibility that a crack (crack) or the like is generated, resulting in a defect, the bonding strength is weakened, and the hermetic sealing property is impaired.
  • Patent Document 2 3A to 3D show a bonding structure between substrates in the functional element package disclosed in Patent Document 2.
  • FIG. In the joint structure disclosed in Patent Document 2, a pair of recesses 18 are formed on the lower surface of the cover substrate 15 covered with the insulating film 16, and the metal film 17 is formed on the inner surfaces of both the recesses 18 and the lower surface of the partition portion 19. Is forming. Further, the bonding material 14 is fixed to the lower surface of the metal film 17 in both the concave portions 18 and the partition portion 19.
  • a metal film 13 is formed in a region wider than the width K of the region covering both the recesses 18.
  • Patent Document 2 is essentially the same as the joint structure disclosed in Patent Document 1. Therefore, the joining process of Patent Document 2 shown in FIGS. 3A to 3D is also performed in the same manner as FIGS. 2A to 2D.
  • Patent Document 2 has the same defects as Patent Document 1. That is, since the molten bonding material 14 spreads outside the concave portion 18 due to wettability with the metal film 13 (see FIG. 3D), excessive pressure is applied between the substrates 11 and 15 or the amount of the bonding material 14 is excessive. If so, the bonding material 14 held between the end of the metal film 13 and the end of the metal film 17 scatters in a direction parallel to the substrate. If the bonding material 14 is scattered in this manner, the bonding material 14 may adhere to an element housed in the functional package and cause malfunction, or may adhere to circuit wiring and cause a short circuit.
  • the bonding material 14 that spreads along the metal film 13 closes the end of the metal film 13 and the end of the metal film 17 with good airtightness. Voids 20 (bubbles) are left behind (see FIG. 3D). If the void 20 remains in the bonding material 14 re-cured in this way, when the reliability test is performed, the bonding material 14 has a difference between the pressure inside the void 20 and the pressure around the bonding material 14. There is a possibility that a crack (crack) or the like is generated, resulting in a defect, the bonding strength is weakened, and the hermetic sealing property is impaired.
  • Patent Document 3 metal wiring is formed in a groove provided on the surface of a silicon wafer, and a terminal electrode provided on the lower surface of the semiconductor device is metalized by solder or a conductive adhesive in the groove. It is described that it is bonded to wiring.
  • the structure of the joint described in Patent Document 3 is a structure for electrically connecting the metal wiring and the terminal electrode, and even if the semiconductor device is tilted, a short circuit is caused between the semiconductor device and the metal wiring.
  • the metal wiring is placed in the groove so as not to occur. Therefore, the technique disclosed in Patent Document 3 is a structure of a joint portion such as Patent Document 1 or Patent Document 2 for mechanically bonding substrates (especially for sealing between substrates). Is different.
  • Patent Document 3 even if a metal wiring is provided in the groove, no special consideration is given to solder for joining the metal wiring and the terminal electrode. That is, since the relationship between the volume of the groove and the supply amount of solder or the like is not taken into consideration, if the supply amount of solder or the like is excessive, there is a possibility that the groove overflows and reaches the adjacent groove (metal wiring). .
  • Patent Document 3 since the depth of the groove is equal to or less than the height of the terminal electrode, the distance between the surface of the silicon wafer and the lower surface of the semiconductor device varies due to variations in the supply amount of solder and the applied pressure. Therefore, in the case of an electronic component casing, the element is likely to come into contact with the casing or the thickness of the electronic component is likely to vary. Moreover, when the applied pressure is too large, the thickness of the solder or the like becomes very thin, and there is a possibility that the bonding strength cannot be obtained.
  • the present invention has been made in view of the technical problems as described above, and the object of the present invention is to prevent the joining material from overflowing or scattering from the joining portion and contaminating the vicinity thereof. Another object of the present invention is to provide a joint structure and a joining method thereof in which voids are generated in the joining material and deterioration of the joining material due to the voids hardly occurs. It is another object of the present invention to provide a structure of a joint portion and a joining method thereof in which the thickness of the joining material becomes too thin and the joint strength of the joint portion is not easily lowered.
  • the structure of the bonding portion according to the present invention is the first substrate, the second substrate having a recess on the surface facing the first substrate, and the first substrate facing the second substrate.
  • the width of the first metal film in at least one of the widths of the first metal film viewed from the direction perpendicular to the first substrate is W1, and is the same as the width of the first metal film.
  • the width of the recess in the direction is Wr
  • the filling When the volume of the first metal film is V1, the volume of the second metal film is V2, the volume of the bonding material is V3, and the volume of the recess is Vr, the following condition (2) Vr ⁇ V1 + V2 + V3 (2) It is characterized by satisfying.
  • the volume of the recess, the first and second metal films, and the bonding material when the volume of the recess, the first and second metal films, and the bonding material is referred to, the recess, the first and second metal films, and the bonding material have a column shape such as a columnar shape or a polygonal column shape. In the case, it refers to the respective volume.
  • the recess extends long in the shape of a groove and the first and second metal films and the bonding material also extend along the recess, the recess, the first and second metal films, and the bonding
  • the volume of the material the entire volume (volume of the entire length) may be used, or the volume per unit length may be used.
  • the structure of the bonding portion of the present invention is such that the first metal film of the first substrate and the second metal film of the second substrate are bonded in the recess provided in the second substrate, Since the condition (2) is satisfied, the volume V3 of the bonding material is smaller than the volume of the space in the recess, and the bonding material does not overflow from the recess. Further, since the width W1 of the first metal film is smaller than the width Wr of the recess (that is, the condition (1): Wr> W1), the bonding material is guided by the wettability of the first metal film. It is difficult to spread out of the recess, and it is possible to prevent the bonding material from scattering out of the recess due to the pressure during bonding. For this reason, it is possible to prevent a short circuit from occurring in the circuit or the circuit wiring due to the bonding material spreading from the concave portion or a malfunction of the sensor.
  • the bonding material does not spread out of the recess due to the wettability of the first metal film, the bonding material does not block the ventilation inside and outside of the recess, and voids are less likely to occur inside the bonding material. . For this reason, it is possible to prevent the occurrence of cracks in the bonding material due to voids or a decrease in bonding strength.
  • a surface of the first substrate facing the second substrate and a surface of the second substrate facing the first substrate are It is characterized by being in contact with each other. According to such an embodiment, when the first substrate and the second substrate are in contact with each other, the variation in the distance between the opposing surfaces of both the substrates can be eliminated and the distance can be kept constant. In addition, it is possible to prevent the bonding material between the first metal film and the second metal film from becoming too thin to obtain a bonding strength.
  • a pair of convex portions project from the surface of the second substrate facing the first substrate, and the concave portion is formed between the convex portions. It is characterized by being.
  • the recess can be formed by a method other than digging the recess in the second substrate, or the recess can be deepened.
  • Still another embodiment of the structure of the bonding portion according to the present invention is such that a convex portion is provided on at least one of the first substrate and the second substrate, and the convex portion provided on both substrates.
  • the projections provided on one or the other substrate and the other substrate are in contact with each other.
  • Still another embodiment of the structure of the joint according to the present invention is characterized in that the convex portion is formed of a metal film.
  • the convex portion and the first or second metal film can be formed at the same time, the process of manufacturing the joint portion is simplified.
  • Yet another embodiment of the structure of the joint according to the present invention is such that the width of the first metal film is W1, and the width of the second metal film in the same direction as the width of the first metal film is W2.
  • W2> W1 (3) It is characterized by satisfying.
  • the width of the metal film (first metal film) located on the opening side of the recess is narrower than the width of the metal film (second metal film) located behind the recess.
  • the spread of the bonding material is also narrower on the opening side of the recess than the depth of the recess, and the bonding material is difficult to protrude outside the recess.
  • the bonding material is less likely to spread to the side surface of the recess at the back of the recess, so that the bonding material does not easily protrude outside the recess through the side surface of the recess.
  • Still another embodiment of the structure of the joint according to the present invention is characterized in that an end of the second metal film is recessed from an opening surface of the recess.
  • the second metal film may extend to the side surface of the recess.
  • the bonding material easily protrudes out of the recess. Therefore, the second metal film reaches the opening end of the recess. It is desirable not to.
  • a part of the wiring provided on the second substrate is located on a bottom surface of the recess, and the second metal film is disposed in the recess in the wiring. It is formed on the top. According to this embodiment, when it is necessary to connect the second metal film to the wiring, the number of manufacturing steps of the second substrate can be reduced, and the area of the second substrate can be reduced.
  • a bonding portion bonding method including a step of preparing a first substrate having a first metal film formed on a surface thereof, a recess formed on the surface, and a second metal film formed in the recess.
  • the width of the first metal film in at least one of the widths of the first metal film viewed from the direction perpendicular to the first substrate is W1, and is the same as the width of the first metal film.
  • the first metal film of the first substrate and the second metal film of the second substrate are bonded in the recess provided in the second substrate. Since the condition (2) is satisfied, the volume V3 of the bonding material is smaller than the volume of the space in the recess, and the bonding material does not overflow from the recess. Further, since the width W1 of the first metal film is smaller than the width Wr of the recess (that is, condition (1): Wr> W1), the bonding material is guided by the wettability of the first metal film. It is difficult to spread out of the recess, and it is possible to prevent the bonding material from scattering out of the recess due to the pressure during bonding. For this reason, it is possible to prevent a short circuit from occurring in the circuit or the circuit wiring due to the bonding material spreading from the concave portion or a malfunction of the sensor.
  • the bonding material does not spread out of the recess due to the wettability of the first metal film, the bonding material does not block the ventilation inside and outside of the recess, and voids are less likely to occur inside the bonding material. . For this reason, it is possible to prevent the occurrence of cracks in the bonding material due to voids or a decrease in bonding strength.
  • the width of the first metal film is W1
  • the width of the bonding material before bonding in the same direction as the width of the first metal film is W3.
  • the thickness of the first metal film is H1
  • the thickness of the second metal film is H2
  • the thickness of the joining material before joining is H3
  • the following condition (6) H1 + H2 + H3 ⁇ Hr (6) It is characterized by satisfying.
  • the bonding material can be crushed between the first metal film and the second metal film, and the bonding material can be reliably bonded to the first and second substrates.
  • Still another embodiment of the bonding method of the bonding portion according to the present invention is characterized in that the bonding material is fixed to the surface of the first metal film before bonding.
  • the bonding material can be fixed to the surface of the first metal film before bonding, or can be fixed to the surface of the second metal film, but the bonding material can be attached to the first substrate side without a recess.
  • the electronic component according to the present invention is formed between the first substrate and the second substrate by bonding the first substrate and the second substrate by the structure of the bonding portion according to the present invention.
  • the device is housed in a space.
  • the bonding material is less likely to contaminate elements such as sensors and semiconductor integrated circuits, so that the yield of electronic components is improved.
  • the concave portion having a groove shape is continuously formed in the second substrate, and the second electrode film is continuously formed in the concave portion along the concave portion.
  • the element can be hermetically sealed or vacuum sealed in the space between the first substrate and the second substrate.
  • the means for solving the above-described problems in the present invention has a feature in which the above-described constituent elements are appropriately combined, and the present invention enables many variations by combining such constituent elements. .
  • FIG. 1A is a schematic cross-sectional view showing a state of a conventional joint before joining.
  • FIG. 1B is a schematic cross-sectional view of a bonded portion showing an ideal bonded state.
  • FIG. 1C and FIG. 1D are schematic cross-sectional views of a joint portion showing a defective joint state.
  • 2A to 2D are schematic cross-sectional views showing the bonding process of the bonding portion disclosed in Patent Document 1.
  • FIG. 3A to 3D are schematic cross-sectional views showing the joining process of the joint disclosed in Patent Document 2.
  • FIG. FIG. 4A is a schematic cross-sectional view of an electronic component according to Embodiment 1 of the present invention.
  • FIG. 4B is an enlarged cross-sectional view showing a joint portion of the electronic component.
  • FIG. 4A is a schematic cross-sectional view of an electronic component according to Embodiment 1 of the present invention.
  • FIG. 4B is an enlarged cross-sectional view showing a joint portion of the electronic component.
  • FIG. 5A is a cross-sectional view illustrating a structure before joining of the joint illustrated in FIG. 4.
  • FIG. 5B is a cross-sectional view illustrating the structure after the bonding portion is bonded.
  • FIG. 6A to FIG. 6C are schematic diagrams for explaining how the bonding material melts and spreads between the first metal film and the second metal film in the bonding process.
  • FIG. 7A is a cross-sectional view illustrating a structure before joining of a joint according to a modification of Embodiment 1 of the present invention.
  • FIG. 7B is a cross-sectional view illustrating the structure after the bonding portion is bonded.
  • FIG. 8A is a cross-sectional view illustrating a structure before bonding of a bonding portion according to Embodiment 2 of the present invention.
  • FIG. 8B is a cross-sectional view illustrating the structure after the bonding portion is bonded.
  • FIG. 9A is a cross-sectional view showing a structure before joining of a joined portion according to a modification of Embodiment 2 of the present invention.
  • FIG. 9B is a cross-sectional view illustrating a structure after the bonding portion is bonded.
  • FIG. 10A is a cross-sectional view showing a structure before joining of a joined portion according to another modification of Embodiment 2 of the present invention.
  • FIG. 10B is a cross-sectional view illustrating the structure after the bonding portion is bonded.
  • FIG. 11A is a cross-sectional view illustrating a structure before bonding of a bonding portion according to Embodiment 3 of the present invention.
  • FIG. 11B is a cross-sectional view illustrating the structure after the bonding portion is bonded.
  • FIG. 12 is a cross-sectional view showing the structure before joining of the joined portion according to Embodiment 4 of the present invention.
  • FIG. 13A is a schematic cross-sectional view showing a first conventional structure for connecting a metal film and a wiring.
  • FIG. 13B is a schematic cross-sectional view showing a second conventional structure for connecting a metal film and a wiring.
  • FIG. 14A to 14H are explanatory views showing a comparison of the manufacturing process between the joint portion according to Embodiment 4 of the present invention and the second conventional structure.
  • FIG. 15 is a schematic cross-sectional view of an electronic component according to Embodiment 5 of the present invention.
  • FIG. 16A is an enlarged schematic cross-sectional view showing a portion X in FIG.
  • FIG. 16B is a schematic cross-sectional view showing the structure of the joint before joining.
  • FIG. 4A is a schematic cross-sectional view of the electronic component 21 according to Embodiment 1 of the present invention, and shows a cross section of the joint portion 24 enlarged in FIG. 4B.
  • a casing 22 is constituted by a base substrate 31 (first substrate) and a cover substrate 35 (second substrate).
  • an insulating film 36 made of a silicon oxide film (SiO 2 ) is formed on the entire lower surface of a main substrate 35a made of a silicon substrate or a glass substrate, and a silicon nitride film (SiN) is made under the insulating film 36.
  • An insulating film 39 is formed. In the region excluding the outer peripheral portion of the lower surface of the cover substrate 35, the insulating film 39 is removed, and thereby a recess 40 is formed on the lower surface of the cover substrate 35.
  • the insulating film 39 is formed in a frame shape on the outer periphery of the lower surface of the cover substrate 35 so as to surround the recess 40. Further, a recess 38 having a groove shape along the length direction of the insulating film 39 is formed in an annular shape on the outer peripheral portion of the lower surface of the cover substrate 35 by removing the central portion in the width direction of the insulating film 39. On the top surface of the groove-shaped recess 38, a bonding metal film 37 (seed layer; second metal film) having a strip shape along the length direction of the recess 38 is continuously formed.
  • the metal film 37 for example, Ti / Au, Cr / Au, Ti / Cu, Cr / Cu, Ti / Ni / Au (each metal layer is listed in order from the one closest to the insulating film 36).
  • the multilayer film is used.
  • the base substrate 31 is obtained by forming an insulating film 32 made of a silicon oxide film (SiO 2 ) on the entire upper surface of a main substrate 31a made of a silicon substrate or a glass substrate.
  • a bonding metal film 33 seed layer; first metal film
  • the metal film 33 also includes, for example, Ti / Au, Cr / Au, Ti / Cu, Cr / Cu, Ti / Ni / Au (each metal layer is listed in order from the one closest to the insulating film 32).
  • a multilayer film is used.
  • the metal film 33 of the base substrate 31 and the metal film 37 of the cover substrate 35 are eutectic bonded by the bonding material 34 in the recess 38, and the bonding portion 24 is formed on the outer peripheral portion of the electronic component 21.
  • the bonding material 34 eutectic solder such as Au—Sn, Au—In, Sn—Ag, or Sn—Cu can be used.
  • the lower surface of the insulating film 39 is in contact with the upper surface of the base substrate 31 (insulating film 32). Since the joint portion 24 is formed so as to surround the recess 40, the space 41 formed between the base substrate 31 and the cover substrate 35 by the recess 40 is hermetically sealed by the joint portion 24, or the space 41 is evacuated. Or it is vacuum-sealed keeping at a low pressure.
  • an element 23 (MEMS element or IC element) is housed in the space 41 of the casing 22, an element 23 (MEMS element or IC element) is housed.
  • the type of the element 23 is not particularly limited, and an arbitrary element such as a sensor or a semiconductor integrated circuit (IC) can be accommodated.
  • the element 23 is supported by the support portion 42 on the upper surface of the base substrate 31, but the element may be integrally formed on the inner surface of the main substrate 31a made of a silicon substrate or the main substrate 35a. .
  • FIG. 5A and 5B are cross-sectional views showing the structure of the joint 24, FIG. 5A shows the structure before joining, and FIG. 5B shows the structure after joining.
  • a predetermined amount of the bonding material 34 having a substantially rectangular cross section is fixed to the upper surface of the metal film 33.
  • the bonding material 34 may be fixed to the lower surface of the metal film 37, but the bonding material 34 is deposited on the metal film 33 rather than depositing the bonding material 34 on the metal film 37 in the recess 38. It is easier.
  • the metal films 33 and 37, the bonding material 34, and the recess 38 have the width of the metal film 33 (the width of the first metal film) W1 and the width of the metal film 37 (the second metal film of the second metal film).
  • W2 W2> W1 ⁇ W3 (Condition C1)
  • W2 of the metal film 37 is equal to the width Wr of the recess 38, but when the metal film 37 is formed on the top surface of the recess 38, the metal film material may adhere to the side surface.
  • the metal film 37 may be formed on the side surface of the recess 38 as long as it does not reach the opening end of the recess 38.
  • the width W1 of the metal film 33 is smaller than the width Wr of the recess 38 (Wr> W1), when the base substrate 31 and the cover substrate 35 are bonded, the metal film 33 is not recessed as shown in FIG.
  • the lower surface of the cover substrate 35 (insulating film 39) comes into contact with the upper surface of the base substrate 31 (insulating film 32). Therefore, the variation in the space height of the space 41 can be reduced, the thickness of the bonding material 34 becomes too thin, the bonding strength decreases, the element 23 interferes with the cover substrate 35, and the thickness of the electronic component 21 increases. Can be prevented. Therefore, the joining portion 24 can be joined with uniform quality only by applying a pressure to the extent that the insulating film 39 comes into contact with the base substrate 31.
  • the bonding material 34 is not easily spread out of the recess 38 due to the wettability of the metal film 33, and the bonding material 34 spreading out of the recess 38 is bonded. It will not be scattered outside the joint 24 by the pressure of time. For this reason, it is possible to prevent the scattered bonding material 34 from adhering to the element 23 and the circuit wiring to cause a short circuit, and to cause the element 23 such as a sensor to malfunction.
  • the bonding material 34 is not easily spread out of the recess 38 due to the wettability of the metal film 33, and the periphery of the recess 38 is blocked by the spread bonding material 34. It becomes difficult to peel off.
  • the lower surface of the insulating film 39 is in contact with the upper surface of the base substrate 31, but since this contact surface is not joined, the air in the recess 38 is driven out of the recess 38 through the contact surface. Therefore, voids are less likely to occur inside the bonding material 34, and problems such as cracks occurring in the bonding material 34 due to voids or a decrease in bonding strength can be prevented.
  • the molten bonding material 34 has good wettability with the metal film, at the time of bonding, the molten bonding material 34 spreads over the entire metal film 33 as shown in FIGS. 6A to 6C. At the end of 33, the bonding material 34 stops spreading. Similarly, when the bonding material 34 contacts the metal film 37, the bonding material 34 spreads over the entire metal film 37, but stops spreading at the end of the metal film 37. Therefore, when the width W1 of the metal film 33 is smaller than the width W2 of the metal film 37 (W2> W1), the bonding material 34 is less spread on the opening side of the recess 38 and the bonding material 34 is deeper in the recess. The spread becomes larger. As a result, the bonding material 34 is difficult to leak out of the recess 38.
  • the width W3 of the bonding material 34 before bonding is equal to or smaller than the width W1 of the metal film 33 (W1 ⁇ W3, preferably W1> W3), so that the bonding material 34 hardly adheres to the side surface of the recess 38.
  • the bonding material 34 is less likely to spread than the width of the metal film 33 after bonding.
  • the volume per unit length (volume of the first metal film) of the metal film 33 is V1
  • the volume per unit length of the metal film 37 volume of the second metal film
  • the bonding material 34 is V1
  • the volume per unit length of V3 is V3
  • Vr ⁇ V1 + V2 + V3 (Condition C2)
  • this condition is Vr> V1 + V2 + V3
  • the volume V3 of the bonding material 34 becomes smaller than the volume of the space in the recess 38 (Vr ⁇ V1-V2), so that the bonding material 34 does not easily overflow from the recess 38.
  • the process margin can be widened by increasing the difference between the volume V3 of the bonding material 34 and the volume of the space (Vr ⁇ V1 ⁇ V2) as long as the bonding strength does not decrease.
  • the volume per unit length is considered as the volume thereof as described above.
  • the total volume of each may be considered.
  • the thickness of the metal film 33 (the thickness of the first metal film) is H1
  • the thickness of the metal film 37 (the thickness of the second metal film) is H2
  • the thickness of 34 before melting is H3
  • the depth of the recess 38 is
  • H1 + H2 + H3 ⁇ Hr (Condition C3)
  • this condition is H1 + H2 + H3> Hr It is desirable that This condition is necessary to hold the bonding material 34 between the metal film 33 and the metal film 37 and securely bond the bonding material 34 to the metal films 33 and 37.
  • the bonding material leaks or scatters to the surroundings, so that the surroundings are hardly contaminated, and a reduction in the bonding strength of the bonding portion can be prevented, and uniform quality can be obtained. Can be produced.
  • FIG. 7A and 7B are cross-sectional views showing a modification of the first embodiment, in which FIG. 7A is a cross-sectional view showing the structure of the joint portion before joining, and FIG. 7B is a cross-sectional view showing the structure of the joint portion after joining. is there.
  • a recess 38 is formed in the main substrate 35 a, and an insulating film 36 made of a silicon oxide film or the like is formed on the surface of the main substrate 35 a and the top surface of the recess 38. Since the other points are the same as in the first embodiment, the same components are denoted by the same reference numerals, and the description thereof is omitted.
  • FIG. 8A and 8B are cross-sectional views showing the structure of the joint portion 51 according to the second embodiment.
  • FIG. 8A shows the structure of the joint portion before joining
  • FIG. 8B shows the structure of the joined portion after joining.
  • the concave portion 38 is formed in the insulating film 39
  • the convex portion 52 made of a metal film is formed in a frame shape on the lower surface of the insulating film 39 all around the concave portion 38 to form the concave portion 38. It is deeper. That is, the concave portion 38 is formed by the insulating film 39 and the convex portion 52.
  • a convex portion 53 made of a metal film is formed in a frame shape on the upper surface of the base substrate 31 so as to face the convex portion 52.
  • the metal film 33 and the metal film 37 are eutectic bonded by the bonding material 34 in a state where the protrusions 52 and 53 are overlapped so as to be in contact with each other.
  • the space inside the convex portion 53 also becomes a part of the concave portion 38.
  • the convex portions 52 and 53 are brought into contact with each other, thereby eliminating the variation in the distance between the opposing surfaces of both the substrates 31 and 35, and keeping the constant distance. Further, it is possible to prevent the bonding material 34 between the metal films 33 and 37 from becoming too thin to obtain a bonding strength.
  • the same effect as in the first embodiment can be obtained by satisfying the conditions C1-C3 as in the first embodiment.
  • the convex portion 52 is made of a metal film, it can be manufactured simultaneously with the metal film 37.
  • a metal film is formed on the entire surface of the insulating film 39 and the bottom surface of the recess, and the metal film 37 and the protrusion 52 are formed by etching the metal film.
  • the manufacturing process of the part can be simplified.
  • the metal film 33 and the convex portion 53 can be formed at the same time. The manufacturing process of the part can be simplified.
  • FIG. 9A and 9B are cross-sectional views showing modifications of the second embodiment, in which FIG. 9A is a cross-sectional view showing the structure of the joint portion 56 before joining, and FIG. 9B is a cross-sectional view showing the structure of the joint portion 56 after joining.
  • FIG. 9A is a cross-sectional view showing the structure of the joint portion 56 before joining
  • FIG. 9B is a cross-sectional view showing the structure of the joint portion 56 after joining.
  • the convex portion 52 is provided only on the lower surface of the cover substrate 35, and the convex portion 52 is brought into contact with the upper surface of the base substrate 31 when the substrates are joined to each other.
  • the concave portion 38 is constituted by the insulating film 39 and the convex portion 52, in applying these conditions C1-C3, the depth of the concave portion in the insulating film 39 is h, and the thickness of the convex portion 52 is hs, respectively.
  • the volume Vr per unit length of the recess 38 is defined as Wr as the width of the recess 38.
  • FIG. 10A and 10B are cross-sectional views showing another modification of the second embodiment, where FIG. 10A is a cross-sectional view showing the structure of the joint portion 57 before joining, and FIG. 10B shows the structure of the joint portion 57 after joining. It is sectional drawing shown.
  • the convex portion 53 is provided only on the upper surface of the base substrate 31, and the convex portion 53 is brought into contact with the lower surface of the cover substrate 35 when the substrates are joined to each other.
  • the concave portion 38 is constituted by the insulating film 39 and the convex portion 53, in applying these conditions C1-C3, the depth of the concave portion in the insulating film 39 is h, and the thickness of the convex portion 53 is ht, respectively.
  • the volume Vr per unit length of the recess 38 is defined as Wr as the width of the recess 38.
  • FIG. 11A and 11B are cross-sectional views showing the structure of the joint 61 according to the third embodiment.
  • FIG. 11A shows the structure of the joint 61 before joining
  • FIG. 11B shows the structure of the joint 61 after joining.
  • the width W2 of the metal film 37 is made smaller than the width Wr of the recess 38. That is, Wr> W2 (Condition C4) Meet.
  • the bonding material 34 hardly spreads to the side surface of the recess 38 on the top surface of the recess 38, so that the bonding material 34 is less likely to leak out of the recess 38 along the side surface of the recess 38.
  • FIG. 12 is a cross-sectional view before joining, showing the structure of the joint 71 according to the fourth embodiment.
  • the bonding metal film 37 is connected to circuit wiring 72 (in-substrate wiring) provided in the cover substrate 35.
  • a conductor circuit wiring 72 is formed inside the cover substrate 35.
  • the circuit wiring 72 is electrically connected to an element housed in the electronic component.
  • a part of the circuit wiring 72 is located on the top surface of the recess 38, and is exposed on the top surface of the recess 38 before the metal film 37 is formed. Since the metal film 37 formed in the recess 38 is formed on the lower surface of the circuit wiring 72, the circuit wiring 72 and the metal film 37 are electrically connected.
  • the metal film 33 is also electrically connected to the circuit wiring 72. Similar to the cover substrate 35, the metal film 33 of the base substrate 31 may be connected to circuit wiring formed inside the base substrate 31, electrodes provided on the outer surface of the base substrate 31, and the like.
  • FIG. 13A shows a conventional structure 81 for electrically connecting the circuit wiring 72 and the metal film 37.
  • the connection electrode portion 82 with the bonding metal film 37 extended is guided into the tapered recess 38, and the connection electrode portion 82 is connected to the circuit wiring 72 in the recess 38.
  • the connection electrode portion 82 is extended from the metal film 37 and connected to the circuit wiring 72, a bonding area and a connection area are required separately, and a large space is required. Thus, downsizing of electronic parts is hindered.
  • region for a connection will be piled up vertically, and it will contribute to size reduction of an electronic component.
  • FIG. 13B shows another conventional structure 91 for electrically connecting the circuit wiring 72 and the metal film 37.
  • a through hole 92 is opened between the circuit wiring 72 and the metal film 37, and the circuit wiring 72 and the metal film 37 are electrically joined by the through electrode 93 filled in the through hole 92.
  • the number of steps for connecting the metal film 37 for bonding and the circuit wiring 72 is increased, and the manufacturing cost is increased.
  • the number of steps can be reduced, and the manufacturing cost can be reduced.
  • FIG. 14A to 14H are diagrams comparing the structure of FIG. 12 with the steps for manufacturing the structure of FIG. 13B, the right side shows the manufacturing process of the structure of FIG. 13B, and the left side is the left side.
  • 13 shows a process for manufacturing the structure of FIG.
  • FIG. 14A shows a process of forming the circuit wiring 72 in a predetermined pattern on the insulating film 36.
  • FIG. 14B shows a process in which the circuit wiring 72 is further covered with the insulating film 36 and the circuit wiring 72 is embedded in the insulating film 36.
  • FIG. 14C shows a step of polishing and planarizing the surface of the insulating film 36.
  • FIG. 14D shows a process of covering the surface of the insulating film 36 with the insulating film 39.
  • FIG. 14E shows a step of opening the recess 38 or the through hole 92 in the insulating film 39 and the insulating film 36.
  • FIG. 14F shows a process of depositing an electrode material 94 on the surface of the insulating film 39, forming a through electrode 93 in the through hole 92 with the electrode material 94, and connecting the through electrode 93 to the circuit wiring 72.
  • FIG. 14G shows a step of peeling and removing the electrode material 94 on the surface of the insulating film 39 by polishing or the like.
  • FIG. 14H shows a step of forming the metal film 37 in a predetermined pattern on the surface of the insulating film 39 and electrically connecting the metal film 37 to the circuit wiring 72 through the through electrode 93.
  • the steps shown in FIGS. 14A to 14H are required.
  • the steps shown in FIGS. Can be simplified.
  • FIG. 15 is a schematic cross-sectional view of an electronic component 101 according to Embodiment 5 of the present invention, for example, a vacuum sealed infrared array sensor.
  • the cover substrate 35 is a first substrate and the base substrate 31 is a second substrate.
  • the casing 22 is composed of a base substrate 31 (second substrate) and a cover substrate 35 (first substrate).
  • an insulating film 32 made of a silicon oxide film (SiO 2 ) is formed on the entire upper surface of a main substrate 31a made of a silicon substrate or a glass substrate, and a silicon nitride film (SiN) is formed on the insulating film 32.
  • An insulating film 39 is formed. The outer peripheral portion of the insulating film 39 is removed in a frame shape, and a groove-shaped recess 38 is formed in an annular shape on the outer peripheral portion of the upper surface of the base substrate 31.
  • a bonding metal film 33 (second metal film) having a strip shape is continuously formed along the length direction of the recess 38.
  • the metal film 33 for example, Ti / Au, Cr / Au, Ti / Cu, Cr / Cu, Ti / Ni / Au (each metal layer is listed in order from the one closest to the insulating film 32).
  • the multilayer film is used.
  • a plurality of recesses 102 are formed on the upper surface of the main substrate 31a of the base substrate 31 and arranged in an array. Sensors, ICs, and the like are formed on the bottom surfaces of the recesses 102, and the arrayed elements 23 are formed. In addition, an opening window 103 is opened in the insulating film 39 corresponding to each recess 102.
  • the cover substrate 35 is obtained by forming an insulating film 36 made of a silicon oxide film (SiO 2 ) on the entire lower surface of a main substrate 35a made of a silicon substrate or a glass substrate. In the region excluding the outer peripheral portion of the lower surface of the cover substrate 35, the insulating film 36 and a part of the main substrate 35a are removed, whereby a recess 104 is formed on the lower surface of the cover substrate 35. On the outer peripheral portion of the lower surface of the cover substrate 35, a band-shaped bonding metal film 37 (first metal film) is continuously formed so as to face the metal film 33 of the base substrate 31.
  • first metal film first metal film
  • the metal film 37 also includes, for example, Ti / Au, Cr / Au, Ti / Cu, Cr / Cu, Ti / Ni / Au (each metal layer is listed in order from the one closest to the insulating film 36). A multilayer film is used.
  • the metal film 33 of the base substrate 31 and the metal film 37 of the cover substrate 35 are eutectic bonded by the bonding material 34 in the recess 38, and the bonding portion 24 is formed on the outer peripheral portion of the electronic component 101.
  • the upper surface of the insulating film 39 is in contact with the lower surface of the cover substrate 35 (insulating film 36). Since the joint portion 24 is formed so as to surround the recess 104, the space 105 and the element 23 formed between the base substrate 31 and the cover substrate 35 by the recess 104 is hermetically sealed or vacuum sealed by the joint portion 24. Is done.
  • FIG. 16A and 16B are cross-sectional views showing the structure of the joint 24, FIG. 16A shows a joined state, and FIG. 16B shows the structure before joining.
  • a predetermined amount of the bonding material 34 having a substantially rectangular cross section is fixed to the lower surface of the metal film 37.
  • the bonding material 34 may be fixed to the upper surface of the metal film 33, but the bonding material 34 is deposited on the lower surface of the metal film 37 rather than depositing the bonding material 34 on the metal film 33 in the recess 38. It is easier.
  • the bonding material 34 is brought into contact with the metal film 33, and pressure is applied between the substrates while the bonding portion is heated.
  • the bonding portion 24 is cooled.
  • the width of the metal film 37 (the width of the first metal film) is W1
  • the width of the metal film 33 (the width of the second metal film)
  • the width of the bonding material 34 before melting is W3.
  • Wr W2> W1 ⁇ W3 (Condition C1)
  • the metal film 33 may also be formed on the side surface of the recess 38 as long as it does not reach the opening end of the recess 38.
  • the volume per unit length of the metal film 37 (volume of the first metal film) is V1
  • the volume per unit length of the metal film 33 (volume of the second metal film) is V2
  • the thickness of the metal film 37 (the thickness of the first metal film) is H1
  • the thickness of the metal film 33 (the thickness of the second metal film) is H2
  • the thickness of 34 before melting is H3, and the depth of the concave portion 38.
  • the electronic component 101 of the fifth embodiment can achieve the same effects as the electronic component 21 of the first embodiment as long as the joint 24 satisfies the above conditions C1-C3.
  • the joint structure shown in the modified example of the first embodiment, the modified example of the second embodiment, the second embodiment, the third embodiment, the fourth embodiment, or the like can be used. .
  • the first metal film (metal film 37), the second metal film (metal film 33), the concave portion, and the bonding material do not need to extend in a strip shape, and are columns such as a columnar shape or a polygonal column shape. One or a plurality of shapes may be provided.
  • the centers of the metal films 33 and 37, the concave portion 38, and the bonding material 34 coincide with each other in the vertical direction, but these centers may be shifted from each other as long as the effects of the present invention are achieved. There is no problem.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Wire Bonding (AREA)
  • Micromachines (AREA)

Abstract

Selon l'invention, on forme un film métallique (33) pour collage sur la surface supérieure d'un substrat de base (31), puis on fixe un matériau de collage (34) sur la surface supérieure du film métallique (33). On creuse une section en creux (38) dans la surface inférieure d'un substrat de recouvrement (35), puis on forme un film métallique (37) pour collage dans la surface supérieure de la section en creux (38). Le film métallique (33) est formé de telle sorte que sa largeur (W1) soit plus étroite (Wr > W1) que la largeur (Wr) de la section en creux (38). Le substrat de base (31) et le substrat de recouvrement (35) se font mutuellement face. La périphérie de la section en creux (38) dans le substrat de recouvrement (35) vient au contact de la surface supérieure du substrat de base (31), et le film métallique (33) et le film métallique (37) sont collés par diffusion à l'aide du matériau de collage (34) à l'intérieur de la section en creux (38). Si V1 est le volume du film métallique (33), si V2 est le volume du film métallique (37), si V3 est le volume du matériau de collage (34), et si Vr est le volume de la section en creux (38), la formule Vr ≥ V1 + V2 + V3 est satisfaite.
PCT/JP2012/080511 2011-12-15 2012-11-26 Structure de section de collage, procédé de collage associé, et composant électronique WO2013088945A1 (fr)

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CN110116984A (zh) * 2018-02-06 2019-08-13 中芯国际集成电路制造(上海)有限公司 Mems器件及其制备方法
CN112117249A (zh) * 2020-09-22 2020-12-22 上海先方半导体有限公司 一种晶圆级键合结构及晶圆级键合方法
US11505451B2 (en) * 2017-12-29 2022-11-22 Texas Instruments Incorporated Apparatus having a bondline structure and a diffusion barrier with a deformable aperture

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JP6365215B2 (ja) * 2014-10-15 2018-08-01 三菱電機株式会社 半導体装置の製造方法
ITUA20164673A1 (it) 2016-06-27 2017-12-27 St Microelectronics Srl Dispositivo mems formato da almeno due strati strutturali incollati reciprocamente e relativo processo di fabbricazione
CN107777655A (zh) * 2016-08-25 2018-03-09 中芯国际集成电路制造(上海)有限公司 一种mems器件及其制备方法和电子装置
CN108100986B (zh) * 2016-11-24 2020-01-31 上海新微技术研发中心有限公司 一种共晶键合方法和半导体器件
IT201700103511A1 (it) * 2017-09-15 2019-03-15 St Microelectronics Srl Dispositivo microelettronico dotato di connessioni protette e relativo processo di fabbricazione
KR102040593B1 (ko) * 2018-02-14 2019-11-06 주식회사 오킨스전자 접합 특성이 향상된 필터 칩 패키지와 웨이퍼 레벨 패키지 및 그 제조 방법
JP2020123697A (ja) 2019-01-31 2020-08-13 キヤノン株式会社 半導体装置、半導体ウエハ、機器、製造方法
KR20230113392A (ko) * 2020-12-10 2023-07-28 옵시디안 센서스 인코포레이티드 멤스 디바이스 제조

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