WO2013080251A1 - Détecteur de rayonnement - Google Patents

Détecteur de rayonnement Download PDF

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Publication number
WO2013080251A1
WO2013080251A1 PCT/JP2011/006656 JP2011006656W WO2013080251A1 WO 2013080251 A1 WO2013080251 A1 WO 2013080251A1 JP 2011006656 W JP2011006656 W JP 2011006656W WO 2013080251 A1 WO2013080251 A1 WO 2013080251A1
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Prior art keywords
insulating
radiation
radiation detector
insulating resin
resin cover
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PCT/JP2011/006656
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English (en)
Japanese (ja)
Inventor
佐藤　賢治
久男 辻
佐々木　理
岸本　栄俊
伸也 長舟
Original Assignee
株式会社島津製作所
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Priority to PCT/JP2011/006656 priority Critical patent/WO2013080251A1/fr
Publication of WO2013080251A1 publication Critical patent/WO2013080251A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like

Definitions

  • the present invention relates to a radiation detector that detects radiation by generating and reading out charges by incidence of radiation, and relates to a radiation detector used in the medical field, the industrial field, and the nuclear field.
  • this type of radiation for example, X-ray
  • this type of radiation indirectly generates radiation from the light (for example, X-rays) and generates charges from the light, thereby indirectly converting radiation to charges.
  • a radiation-sensitive semiconductor generates a charge.
  • the direct conversion type radiation detector includes an active matrix substrate 51, a radiation sensitive semiconductor 52 that generates an electric charge upon incidence of radiation, and a common electrode 53 for applying a bias voltage.
  • the active matrix substrate 51 is configured by forming a plurality of collection electrodes (not shown) on the radiation incident surface side and disposing an electric circuit (not shown) for accumulating / reading charges collected by each collection electrode. ing. Each collection electrode is set in a two-dimensional matrix arrangement within the radiation detection effective area SA.
  • the semiconductor 52 is stacked on the incident surface side of the collecting electrode of the active matrix substrate 51, and the common electrode 53 is formed in a planar shape on the incident side of the semiconductor 52 and stacked.
  • a lead wire 54 for supplying bias voltage is connected to the incident surface of the common electrode 53.
  • a bias voltage is applied from a bias supply power source (not shown) to a bias voltage applying common electrode 53 via a lead wire 54 for supplying a bias voltage.
  • a bias voltage is applied from a bias supply power source (not shown) to a bias voltage applying common electrode 53 via a lead wire 54 for supplying a bias voltage.
  • electric charges are generated by the radiation-sensitive semiconductor 52 with the incidence of radiation. This generated charge is once collected by the collecting electrode.
  • the collected charge is taken out as a radiation detection signal for each collecting electrode by an electric circuit for accumulation / reading composed of a capacitor, a switching element, electric wiring, and the like.
  • Each collection electrode of the two-dimensional matrix array corresponds to an electrode (pixel electrode) corresponding to each pixel of the radiation image.
  • the amorphous semiconductor can be easily formed into a thick and wide film by a method such as vacuum evaporation. Can be formed. Therefore, the amorphous semiconductor is suitable for constituting a two-dimensional array type radiation detector that requires a large-area thick film.
  • the present inventor has a structure in which the entire surface on the exposed surface of the semiconductor 52 and the common electrode 53 is covered with a high-voltage insulating resin layer 55 made of, for example, silicone resin in order to suppress creeping discharge. (See, for example, Patent Document 1).
  • the radiation detector is warped due to a temperature change, and the insulating resin layer 55, the semiconductor 52, and the common electrode 53 are cracked.
  • the intermediate layer made of the carrier-selective high-resistance thin film is formed on the incident surface of the semiconductor 52 or the surface opposite to the incident surface, the intermediate layer is also cracked. By cracking these layers, the creeping discharge withstand voltage becomes insufficient.
  • the same as the active matrix substrate 51 is formed on the upper side (incident side) of the insulating resin layer 55 made of a high pressure-resistant curable synthetic resin represented by an epoxy resin, for example.
  • the present inventors have proposed a structure in which the insulating resin layer 55 is sandwiched between the active matrix substrate 51 and the insulating auxiliary plate 56 so as to cover the insulating auxiliary plate 56 having a thermal expansion coefficient (see, for example, Patent Document 2). ).
  • the insulating resin layer 55 is formed thick including the radiation detection effective area SA, there is a problem that radiation is attenuated by the insulating resin layer 55.
  • the insulating resin layer 55 in the radiation detection effective area SA is thinner than the insulating resin layer 55 in the peripheral region outside the radiation detection effective area SA.
  • the present inventors have proposed (for example, see Patent Document 3). In the case of this structure, since the insulating resin layer 55 is thinly formed in the radiation detection effective area SA, radiation attenuation by the insulating resin layer 55 can be suppressed as much as possible.
  • the temperature environment of the radiation detector manufacturing site is usually 20 ° C. to 25 ° C., but there is a problem that the usage environment is not always the same as this temperature range. Furthermore, the neglected and transported environment may be at a farther temperature. When exposed to a temperature environment different from the temperature at the time of manufacturing for a long time, even when using FIG. 10 (Patent Document 2) or FIG. It has recently been found that the performance of the detector deteriorates due to the occurrence of film breakage.
  • the present invention has been made in view of such circumstances, and an object thereof is to provide a long-life radiation detector even if the environment changes.
  • the defective pixel means a pixel whose value is extremely large or small compared to the normal pixel value of the output radiation image.
  • a possible cause of the defective pixel is an internal stress in the insulating resin layer.
  • the structure of the radiation detector can be realized by the newly provided insulating resin cover if the insulating auxiliary plate and the insulating resin cover are bonded to each other with a bonding material. I got the knowledge.
  • the high temperature thermo test of FIG. 13 was used for confirmation.
  • the entire area is divided into four areas, area PCA, area Ga, area PCB, and area Gb. 12B, in the region PCA, an insulating synthetic resin cover 57 made of polycarbonate (PC) is interposed between the insulating resin layer 55 and the insulating auxiliary plate 56 (made of glass).
  • PC polycarbonate
  • the insulating auxiliary layer 56 directly covers the insulating resin layer 55 on the upper side as in the conventional structure.
  • the insulating synthetic resin cover 57 is interposed between the insulating resin layer 55 and the auxiliary insulating plate 56, and in the area Gb, the insulating auxiliary plate 56 is disposed on the upper side of the insulating resin layer 55 as in the conventional structure. Cover directly.
  • an adhesive tape is used as a bonding material 58 for bonding the auxiliary insulation plate 56 and the insulating synthetic resin cover 57.
  • the pixels in each area PCA, Ga, PCB, and Gb are 1400 vertical ⁇ 1400 horizontal.
  • a high-temperature thermo test is performed as shown in FIG. 13 in which a voltage of 10 kV is applied (energized) to the common electrode at a temperature of 35 ° C. and the occurrence of defective pixels is compared in each region. is there.
  • a clear difference appears depending on the presence or absence of an insulating synthetic resin cover made of polycarbonate (PC).
  • PC polycarbonate
  • the radiation detector according to the present invention is a radiation detector that detects radiation by generating and reading out charges by incidence of radiation, and (a) a plurality of collecting electrodes that collect the charges are two-dimensional matrix A matrix substrate that reads out a radiation detection signal based on the charge from each of the collecting electrodes, (b) a radiation-sensitive semiconductor layer that generates the charge upon incidence of the radiation, and (c) the radiation.
  • a common electrode for applying a bias voltage to the sensitive semiconductor layer (d) an insulating resin layer covering the entire surface on the exposed surface of the radiation sensitive semiconductor layer and the common electrode, and (e) an insulating resin cover; (F) an auxiliary insulation plate, (a) a matrix substrate, (b) a radiation-sensitive semiconductor layer, (c) a common electrode, (d) an insulating resin layer, (e) an insulating resin cover And (f) Insulating auxiliary plates are laminated in this order, the insulating auxiliary plate is formed of a material having the same degree of elasticity and thermal expansion as the matrix substrate, and the insulating resin cover is formed of the insulating resin layer and The insulating auxiliary plate and the insulating resin cover are formed of a material having the same degree of elasticity and coefficient of thermal expansion, and are bonded to each other by a bonding material.
  • an insulating resin cover is provided, and a matrix substrate, a radiation-sensitive semiconductor layer, a common electrode, an insulating resin layer, an insulating resin cover, and an auxiliary insulation plate are laminated in this order.
  • the auxiliary insulation plate is made of a material having the same elasticity and thermal expansion coefficient as the matrix substrate, and these layers (radiation sensitive semiconductor layer, common electrode, insulation resin layer and Since the insulating resin cover) is sandwiched, it is possible to prevent the radiation detector from warping due to temperature changes and cracking of these layers.
  • the insulating resin cover is formed of a material having the same degree of elasticity and thermal expansion as the insulating resin layer, stress due to temperature change is less likely to occur, and internal stress is less likely to accumulate in the insulating resin layer. If the insulating auxiliary plate and the insulating resin cover are bonded together by a bonding material, the structure of the radiation detector can be realized by the newly provided insulating resin cover. As a result, a long-life radiation detector can be realized even if the environment changes.
  • “same degree” indicates the degree to which the digits of each numerical value in elasticity (tensile elastic modulus described later) and thermal expansion coefficient (linear expansion coefficient described later) do not change. It is a range up to double or a fraction.
  • a carrier-selective intermediate layer is formed between the radiation-sensitive semiconductor layer and the common electrode, and the carrier-selectivity is formed between the radiation-sensitive semiconductor layer and the collection electrode.
  • the intermediate layer may be formed only between the radiation-sensitive semiconductor layer and the common electrode, or the carrier-selective intermediate layer may be formed between the radiation-sensitive semiconductor layer and the collecting electrode.
  • a carrier-selective intermediate layer may be formed only between them. Dark current can be reduced by forming an intermediate layer on the incident surface (surface on the common electrode side) of the radiation-sensitive semiconductor layer or on the surface opposite to the incident surface (surface on the collection electrode side). .
  • the insulating resin layer is an epoxy resin
  • the tensile elastic modulus of the insulating resin cover is in the range of 1 GPa to 10 GPa
  • the linear expansion coefficient is 30 ⁇ 10 ⁇ 6 /
  • the range is from K to 300 ⁇ 10 ⁇ 6 / K
  • the matrix substrate is glass
  • the tensile modulus of the insulation auxiliary plate is 50 GPa or more
  • the linear expansion coefficient is 0.1 ⁇ 10 ⁇ 6 / K or more. To 10 ⁇ 10 ⁇ 6 / K or less.
  • the tensile modulus is in the range of 1 GPa to 10 GPa, and the linear expansion coefficient is in the range of 30 ⁇ 10 ⁇ 6 / K to 300 ⁇ 10 ⁇ 6 / K.
  • the insulating resin cover and the insulating resin layer made of epoxy resin have approximately the same degree of elasticity and thermal expansion coefficient.
  • an auxiliary insulation plate having a tensile elastic modulus of 50 GPa or more and a linear expansion coefficient of 0.1 ⁇ 10 ⁇ 6 / K or more to 10 ⁇ 10 ⁇ 6 / K or less.
  • the matrix substrate made of glass has the same degree of elasticity and coefficient of thermal expansion.
  • the insulating resin cover is preferably a polymer resin.
  • An insulating resin cover can be easily formed with a polymer resin.
  • the polymer resin include polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), and the insulating resin cover is one of polycarbonate, polyethylene terephthalate, and polypropylene.
  • the auxiliary insulation plate is preferably glass.
  • the auxiliary insulating plate made of glass and the matrix substrate made of glass have the same degree of elasticity and thermal expansion coefficient.
  • the bonding material for bonding the insulating auxiliary plate and the insulating resin cover is preferably a silicone resin adhesive, adhesive tape, synthetic rubber, or the like, which may be combined. Since these materials are highly flexible bonding materials, they have an allowance for expansion and contraction of the insulating resin layer due to temperature changes, and can further suppress the generation of internal stress in the insulating resin layer.
  • the bonding material is not limited to these highly flexible bonding materials, and may be a bonding material with low flexibility typified by an epoxy resin adhesive or the like.
  • the region where the auxiliary insulating plate and the insulating resin cover are joined is not particularly limited.
  • the entire surface including the radiation detection effective area may be used, but the insulating auxiliary plate and the insulating resin cover are only in the peripheral region. It is preferable that they are joined together.
  • the insulating resin layer since there is no bonding material in the radiation detection effective area that is the central region, the insulating resin layer has an allowance for the expansion and contraction of the insulating resin layer due to temperature change, similar to the effect of the highly flexible bonding material. The generation of internal stress can be further suppressed. Therefore, the auxiliary insulation plate and the insulating resin cover can be bonded only in the peripheral region with a bonding material having low flexibility.
  • the auxiliary insulation plate and the insulating resin cover may be joined only in the peripheral region with a highly flexible joining material.
  • the structure which combined the radiation detector of these invention mentioned above and FIG. 11 may be sufficient. That is, in the radiation detectors of these inventions described above, the thickness of the insulating resin layer in the radiation detection effective area may be thinner than the thickness of the insulating resin layer in the peripheral region outside the radiation detection effective area. Good. In the case of this structure, in addition to the effect of realizing a long-life radiation detector, attenuation of radiation by the insulating resin layer can be suppressed as much as possible.
  • the insulating resin cover is recessed in the radiation detection effective area and integrally formed, and an insulating auxiliary plate is placed on and joined to the recessed portion where the insulating resin cover is recessed.
  • the thickness of the insulating resin layer in the radiation detection effective area can be made thinner than the thickness of the insulating resin layer in the peripheral region by the amount of depression of the insulating resin cover.
  • a fixed frame having an effective radiation detection area is provided, and an insulating resin cover and an insulation auxiliary are fixed to the opening of the fixed frame by fixing an insulating auxiliary plate and an insulating resin cover that are joined together from the inside.
  • the thickness of the insulating resin layer in the radiation detection effective area can be made thinner than the thickness of the insulating resin layer in the peripheral region, as much as the auxiliary insulating plate and the insulating resin cover are recessed inward from the fixed frame.
  • a buffer material made of an elastic material is interposed between the auxiliary insulation plate and the insulating resin cover.
  • the internal stress in the insulating resin layer can be uniformly dispersed by the buffer material.
  • a bonding material is provided on both sides of the buffer material, and the insulating auxiliary plate and the buffer material are bonded by the bonding material, and the insulating resin cover and the buffer material are bonded by the bonding material.
  • the auxiliary insulation plate and the insulating resin cover are joined (the former structure).
  • a cushioning material is interposed between the insulation auxiliary plate and the insulating resin cover, and in the peripheral area outside the radiation detection effective area, the insulation auxiliary plate and the insulating resin cover are joined. Join directly by material (the latter structure).
  • both the former structure and the latter structure may be combined.
  • the buffer material may be conductive.
  • the buffer material is conductive, static electricity accumulated between the auxiliary insulation plate and the insulating resin cover can be discharged, and an electrostatic noise prevention effect can be obtained.
  • the cushioning material need not be conductive.
  • the auxiliary insulation plate is formed of a material having the same degree of elasticity and thermal expansion as the matrix substrate, and each layer (radiation sensitive semiconductor) is interposed between the matrix substrate and the insulation auxiliary plate.
  • Layer, common electrode, insulating resin layer, and insulating resin cover) are sandwiched, so that it is possible to prevent the radiation detector from warping due to temperature change and cracking of these layers.
  • the insulating resin cover is formed of a material having the same degree of elasticity and thermal expansion as the insulating resin layer, stress due to temperature change is less likely to occur, and internal stress is less likely to accumulate in the insulating resin layer.
  • the structure of the radiation detector can be realized by the newly provided insulating resin cover. As a result, a long-life radiation detector can be realized even if the environment changes.
  • FIG. 1 is a schematic cross-sectional view of a flat panel X-ray detector (FPD) according to Example 1.
  • FIG. It is a block diagram which shows the equivalent circuit of the active matrix board
  • A) to (c) are schematic cross-sectional views respectively showing combinations of intermediate layers which are carrier-selective high-resistance semiconductor layers.
  • 6 is a schematic cross-sectional view of a flat panel X-ray detector (FPD) according to Embodiment 2.
  • FIG. (A), (b) is a schematic sectional drawing of the flat panel type
  • FIG. (A)-(c) is a schematic sectional drawing of the flat panel type X-ray detector (FPD) based on Example 4.
  • FIG. It is a schematic sectional drawing of the conventional radiation detector. It is a schematic sectional drawing of the conventional radiation detector different from FIG. It is a schematic sectional drawing of the conventional radiation detector different from FIG. 8, FIG. FIG. 11 is a schematic sectional view of a conventional radiation detector different from those shown in FIGS.
  • (A) is a schematic plan view of the radiation detector for experiment
  • (b) is a schematic sectional drawing of the radiation detector for experiment. It is a graph of the high temperature thermo test obtained using the radiation detector for experiment. It is the optical microscope enlarged photograph of the surface after 5800 hours progress of the high temperature thermo test of the radiation detector for experiment.
  • FIG. 1 is a schematic cross-sectional view of a direct conversion type flat panel X-ray detector (hereinafter abbreviated as “FPD” where appropriate) according to the first embodiment
  • FIG. FIG. 3 is a block diagram showing an equivalent circuit of an active matrix substrate of an FPD
  • FIG. 3 is a schematic sectional view of the active matrix substrate of a flat panel X-ray detector (FPD).
  • FPD direct conversion type flat panel X-ray detector
  • the FPD according to the first embodiment includes an active matrix substrate 1, a radiation-sensitive semiconductor 2 that generates a charge upon incidence of radiation (X-rays in the first to fourth embodiments), a bias voltage, and the like. And a common electrode 3 for application.
  • the active matrix substrate 1 has a plurality of collecting electrodes 11 formed on the radiation incident surface side, and an electric circuit 12 for storing and reading out charges collected by the collecting electrodes 11. It is configured.
  • Each collection electrode 11 is set in a two-dimensional matrix arrangement within the radiation detection effective area SA.
  • the active matrix substrate 1 corresponds to the matrix substrate in the present invention
  • the radiation-sensitive semiconductor 2 corresponds to the radiation-sensitive semiconductor layer in the present invention
  • the common electrode 3 for applying the bias voltage is common in the present invention.
  • the collection electrode 11 corresponds to the collection electrode in the present invention
  • the radiation detection effective area SA corresponds to the radiation detection effective area in the present invention.
  • the semiconductor 2 is laminated on the incident surface side of the collecting electrode of the active matrix substrate 1, and the common electrode 3 is formed in a planar shape on the incident side of the semiconductor 2 and laminated.
  • a lead wire 4 for supplying bias voltage is connected to the incident surface of the common electrode 3.
  • a lead wire 4 such as a copper wire is connected to the common electrode 3 via a conductive paste (for example, a silver paste).
  • the active matrix substrate 1 is formed with the collecting electrode 11 as described above, and the storage / reading electric circuit 12 is provided.
  • the electric circuit 12 for accumulation / reading includes a capacitor 12A, a TFT (thin film field effect transistor) 12B as a switching element, a gate line 12a, a data line 12b, and the like, and one capacitor 12A and one for each collecting electrode 11 TFT12B are connected in association with each other.
  • a gate driver 13, a charge / voltage conversion amplifier 14, a multiplexer 15, and an A / D converter 16 are arranged and connected around the storage / reading electric circuit 12 of the active matrix substrate 1.
  • the gate driver 13, the charge / voltage conversion amplifier 14, the multiplexer 15, and the A / D converter 16 are connected to a substrate different from the active matrix substrate 1. Note that some or all of the gate driver 13, the charge-voltage conversion amplifier 14, the multiplexer 15, and the A / D converter 16 may be built in the active matrix substrate 1.
  • a bias voltage is applied from a bias supply power source (not shown) to the common electrode 3 for bias voltage application via a lead wire 4 for supplying bias voltage.
  • a bias voltage is applied from a bias supply power source (not shown) to the common electrode 3 for bias voltage application via a lead wire 4 for supplying bias voltage.
  • the bias voltage applied charges are generated in the radiation-sensitive semiconductor 2 with the incidence of radiation (X-rays in Examples 1 to 4).
  • the generated charges are once collected by the collecting electrode 11.
  • the electric charge collected by the storage / readout electric circuit 12 is taken out as a radiation detection signal (X-ray detection signal in the first to fourth embodiments) for each collection electrode 11.
  • the charges collected by the collecting electrode 11 are temporarily accumulated in the capacitor 12A.
  • a read signal is sequentially applied from the gate driver 13 to the gate of each TFT 12B through the gate line 12a.
  • the TFT 12B to which the read signal is given shifts from OFF to ON.
  • the data line 12b connected to the source of the shifted TFT 12B is sequentially switched and connected by the multiplexer 15, the charge accumulated in the capacitor 12A is read from the TFT 12B via the data line 12b.
  • the read charge is amplified by the charge-voltage conversion amplifier 14 and sent to the A / D converter 16 as a radiation detection signal (X-ray detection signal in the first to fourth embodiments) for each collection electrode 11 by the multiplexer 15. To convert from analog value to digital value.
  • an X-ray detection signal is sent to an image processing circuit at a subsequent stage, image processing is performed, and a two-dimensional X-ray fluoroscopic image is output.
  • Each collection electrode 11 in the two-dimensional matrix array corresponds to an electrode (pixel electrode) corresponding to each pixel of the radiation image (here, a two-dimensional X-ray fluoroscopic image).
  • the FPD according to the first embodiment detects the two-dimensional intensity distribution of the radiation (X-rays in the first to fourth embodiments) projected onto the radiation detection effective area SA. It is a two-dimensional array type radiation detector that can be used.
  • the FPD includes an insulating resin layer 5 that covers the entire surface of the exposed surface of the semiconductor 2 and the common electrode 3.
  • the FPD includes an auxiliary insulating plate 6 made of a material having the same degree of elasticity and thermal expansion as the active matrix substrate 1.
  • an insulating synthetic resin cover 7 is interposed between the insulating resin layer 5 and the auxiliary auxiliary plate 6 as the structure of the characteristic part of the present invention.
  • the insulating synthetic resin cover 7 is formed of a material having the same degree of elasticity and thermal expansion as the insulating resin layer 5. Furthermore, as shown in FIG.
  • the auxiliary insulation plate 6 and the insulating synthetic resin cover 7 are bonded to each other by the bonding material 8 on the entire surface including the radiation detection effective area SA.
  • the insulating resin layer 5 corresponds to the insulating resin layer in the present invention
  • the insulating auxiliary plate 6 corresponds to the insulating auxiliary plate in the present invention
  • the insulating synthetic resin cover 7 corresponds to the insulating resin cover in the present invention.
  • the material 8 corresponds to the bonding material in the present invention.
  • a spacer 9 is erected on the matrix substrate 1, and the auxiliary insulating plate 6 and the insulating synthetic resin cover 7 are supported on the spacer 9.
  • a low-temperature room-temperature curing epoxy resin agent is injected and cured at room temperature.
  • An insulating resin layer 5 made of a curable epoxy resin agent is formed in the gap.
  • a glass substrate is used as the active matrix substrate 1.
  • the glass substrate of the active matrix substrate 1 is about 0.5 mm to 1.5 mm, for example.
  • the thickness of the semiconductor 2 is normally a thick film of about 0.5 mm to 1.5 mm, and the area is, for example, about 20 cm to 50 cm long ⁇ 20 cm to 50 cm wide.
  • a glass substrate represented by a borosilicate glass substrate or a quartz glass substrate is used for example.
  • the glass substrate of the auxiliary insulation plate 6 is also about 0.5 mm to 1.5 mm, for example.
  • the radiation-sensitive semiconductor 2 includes high-purity amorphous selenium (a-Se), alkali metals such as Na, halogens such as Cl, selenium doped with As or Te, and amorphous semiconductors of selenium compounds, CdTe, CdZnTe, PbI 2 , It is preferably one of non-selenium-based polycrystalline semiconductors such as HgI 2 and TlBr.
  • Amorphous selenium, amorphous semiconductors of selenium and selenium compounds doped with alkali metal, halogen or As or Te, and non-selenium-based polycrystalline semiconductors are excellent in suitability for large area and thick film.
  • a-Se having a specific resistance of 10 9 ⁇ or more, preferably 10 11 ⁇ or more is used for the semiconductor 2, the suitability for increasing the area and the suitability for increasing the film thickness are remarkably excellent.
  • the semiconductor 2 in addition to the sensitive semiconductor 2 described above, carrier selectivity formed on the incident surface (upper surface in FIG. 1), the surface opposite to the incident side (lower surface in FIG. 1) or both surfaces.
  • the combination with the intermediate layer which is a high resistance semiconductor layer is also included.
  • an intermediate layer 2a is formed between the semiconductor 2 and the common electrode 3, and an intermediate layer 2b is formed between the semiconductor 2 and the collecting electrode 11 (see FIG. 3).
  • the intermediate layer 2a may be formed only between the semiconductor 2 and the common electrode 3, or as shown in FIG.
  • the intermediate layer 2b may be formed only between the collecting electrode 11 (see FIG. 3).
  • the intermediate layers 2a and 2b correspond to the carrier selective intermediate layer in the present invention.
  • the dark current can be reduced by providing the carrier selective intermediate layers 2a and 2b.
  • the carrier selectivity mentioned here refers to the property that the contribution rate to the charge transfer action is remarkably different between electrons and holes which are charge transfer media (carriers) in the semiconductor.
  • the following modes are exemplified.
  • a positive bias voltage is applied to the common electrode 3
  • a material having a large contribution ratio of electrons is used for the intermediate layer 2a.
  • the injection of holes from the common electrode 3 is blocked, and the dark current can be reduced.
  • a material having a large contribution ratio of holes is used for the intermediate layer 2b.
  • the injection of electrons from the collecting electrode 11 is blocked, and the dark current can be reduced.
  • the thickness of the carrier selective intermediate layers 2a and 2b is usually preferably in the range of 0.1 ⁇ m to 10 ⁇ m. If the thickness of the intermediate layers 2a and 2b is less than 0.1 ⁇ m, there is a tendency that the dark current cannot be sufficiently suppressed, and conversely, if the thickness exceeds 10 ⁇ m, radiation detection tends to be hindered (for example, the sensitivity tends to decrease). Appears.
  • semiconductors used for the carrier selective intermediate layers 2a and 2b include polycrystalline semiconductors such as Sb 2 S 3 , ZnTe, CeO 2 , CdS, ZnSe, and ZnS, alkali metals such as Na, halogens such as Cl, or Selenium doped with As or Te and an amorphous semiconductor of a selenium compound can be cited as being excellent in suitability for large area.
  • those having a large contribution of electrons include polycrystalline semiconductors such as CeO 2 , CdS, CdSe, ZnSe, and ZnS that are n-type semiconductors, alkali metals, As, and Te.
  • An amorphous body such as amorphous Se that has been doped to reduce the contribution ratio of holes can be used.
  • examples of the material having a large contribution of holes include a polycrystalline semiconductor such as ZnTe which is a p-type semiconductor, and an amorphous material such as amorphous Se doped with halogen to reduce the contribution of electrons.
  • an organic film layer such as polycarbonate in which a hole transfer agent or an electron transfer agent is mixed may be formed between the semiconductor 2 and the intermediate layer 2a.
  • an organic film layer such as polycarbonate in which a hole transfer agent or an electron transfer agent is mixed may be formed between the semiconductor 2 and the intermediate layer 2b.
  • the common electrode 3 is preferably formed of, for example, gold (Au) or aluminum (Al). In the present embodiment 1, including later-described embodiments 2 to 4, vapor deposition is performed with gold in order to form the common electrode 3 with gold.
  • the insulating resin layer 5 is made of a room temperature curing type epoxy resin agent as described above, and an epoxy resin is used.
  • the insulating resin layer 5 may be formed of a resin other than an epoxy resin (for example, a silicone resin).
  • the epoxy resin of the insulating resin layer 5 has a gap between the common electrode 3 and the insulating synthetic resin cover 7 of, for example, about 1 mm to 2 mm.
  • the insulating synthetic resin cover 7 is made of a polymer resin such as polycarbonate (PC), polyethylene terephthalate (PET), or polypropylene (PP).
  • the polymer resin of the insulating synthetic resin cover 7 is, for example, about 0.5 mm to 1.5 mm. It is not limited to the insulating synthetic resin cover 7 and is not particularly limited as long as it is an insulating resin cover such as natural resin.
  • the bonding material 8 for example, a highly flexible bonding material such as a silicone resin adhesive, an adhesive tape, or synthetic rubber (so-called rubber paste) is used.
  • a highly flexible bonding material such as a silicone resin adhesive, an adhesive tape, or synthetic rubber (so-called rubber paste) is used.
  • the insulating auxiliary plate 6 and the insulating synthetic resin cover 7 are bonded to the entire surface including the radiation detection effective area SA by the bonding material 8.
  • the spacer 9 is made of, for example, PC resin or ABS resin.
  • an insulating resin cover (insulating synthetic resin cover 7 in each embodiment) is provided, and a matrix substrate (in each embodiment).
  • Active matrix substrate 1), semiconductor (radiation sensitive) 2, common electrode (for bias voltage application) 3, insulating resin layer 5, insulating resin cover (insulating synthetic resin cover 7) and auxiliary insulating plate 6 are laminated in this order.
  • the insulating auxiliary plate 6 is formed of a material having the same elasticity and thermal expansion coefficient as that of the matrix substrate (active matrix substrate 1), and these layers (active matrix substrate 1) and the insulating auxiliary plate 6 are provided with these layers ( Since the semiconductor layer 2, the common electrode 3, the insulating resin layer 5, and the insulating synthetic resin cover 7) are sandwiched, it is possible to prevent the FPD from warping due to temperature changes and the cracking of these layers.
  • the insulating resin cover (insulating synthetic resin cover 7 in each embodiment) is formed of a material having the same degree of elasticity and thermal expansion as the insulating resin layer 5, stress due to temperature change is less likely to occur, and the insulating resin cover 5 is insulated. Internal stress is unlikely to accumulate in the resin layer 5. If the auxiliary insulation plate 6 and the insulating resin cover (insulating synthetic resin cover 7) are bonded together by the bonding material 8, the FPD structure can be realized by the newly provided insulating resin cover (insulating synthetic resin cover 7). . As a result, a flat panel X-ray detector (FPD) having a long life even when the environment changes can be realized.
  • FPD flat panel X-ray detector
  • “same degree” in this specification means elasticity (tensile elastic modulus described later) and thermal expansion coefficient (linear expansion coefficient described later). ) Indicates the degree to which the numerical value of each numerical value does not change, and is several times the numerical value or a range up to a fraction.
  • an intermediate layer 2a (carrier-selective) is formed between the (radiation sensitive) semiconductor 2 and the common electrode 3, and the semiconductor 2 and the collecting electrode 11 (see FIG. 3).
  • the intermediate layer 2b may be formed between the semiconductor 2 and the common electrode 3 (see FIG. 4B). )), The intermediate layer 2b may be formed only between the semiconductor 2 and the collecting electrode 11 (see FIG. 3) (see FIG. 4C).
  • the insulating resin layer 5 is an epoxy resin
  • the tensile modulus (Tensile Modulus) of the insulating resin cover (insulating synthetic resin cover 7 in each embodiment) is The range is from 1 GPa to 10 GPa, and the linear expansion coefficient is from 30 ⁇ 10 ⁇ 6 / K to 300 ⁇ 10 ⁇ 6 / K.
  • the matrix substrate (active matrix substrate 1 in each embodiment) is glass
  • the tensile elastic modulus of the auxiliary insulating plate 6 is 50 GPa or more
  • the linear expansion coefficient is 0.1 ⁇ 10 ⁇ 6 / K or more to 10 ⁇ .
  • the range is 10 ⁇ 6 / K or less.
  • the tensile modulus is in the range of 1 GPa to 10 GPa and the linear expansion coefficient is in the range of 30 ⁇ 10 ⁇ 6 / K to 300 ⁇ 10 ⁇ 6 / K.
  • the insulating resin cover (insulating synthetic resin cover 7) and the insulating resin layer 5 made of epoxy resin have the same degree of elasticity and thermal expansion.
  • the tensile elastic modulus is 50 GPa or more, and the linear expansion coefficient is 0.1 ⁇ 10 ⁇ 6 / K or more to 10 ⁇ 10 ⁇ 6 / K or less.
  • the insulating auxiliary plate 6 in the range and the matrix substrate made of glass (active matrix substrate 1) have the same degree of elasticity and thermal expansion coefficient as each other.
  • the insulating resin cover (insulating synthetic resin cover 7 in each embodiment) is preferably a polymer resin.
  • An insulating resin cover (insulating synthetic resin cover 7) can be easily formed of a polymer resin.
  • the polymer resin include polycarbonate (PC), polyethylene terephthalate (PET), and polypropylene (PP).
  • the insulating resin cover (insulating synthetic resin cover 7) is any one of polycarbonate, polyethylene terephthalate, and polypropylene. .
  • the insulating auxiliary plate 6 is preferably glass. As described above, when glass is employed as the matrix substrate (the active matrix substrate 1 in each embodiment), the auxiliary insulating plate 6 made of glass and the matrix substrate made of glass (active matrix substrate 1) are also: Has the same degree of elasticity and coefficient of thermal expansion as each other.
  • the bonding material 8 for bonding the auxiliary insulation plate 6 and the insulating resin cover is preferably a silicone resin adhesive, adhesive tape, synthetic rubber, or the like. Also good. Since these materials are highly flexible bonding materials, there is an allowance for expansion and contraction of the insulating resin layer 5 due to temperature changes, and the generation of internal stress in the insulating resin layer 5 can be further suppressed.
  • the bonding material 8 is not limited to these highly flexible bonding materials, and may be a bonding material with low flexibility represented by an epoxy resin adhesive or the like.
  • FIG. 5 is a schematic cross-sectional view of a flat panel X-ray detector (FPD) according to the second embodiment.
  • FPD flat panel X-ray detector
  • the insulating auxiliary plate 6 and the insulating synthetic resin cover 7 are bonded to the entire surface including the radiation detection effective area SA by the bonding material 8.
  • the auxiliary insulation plate 6 and the insulating synthetic resin cover 7 are joined only in the peripheral region excluding the radiation detection effective area SA.
  • the region where the auxiliary insulation plate 6 and the insulating resin cover (insulating synthetic resin cover 7 in each embodiment) are joined is not particularly limited, and the entire surface including the radiation detection effective area SA as in the first embodiment.
  • the auxiliary insulation plate 6 and the insulating resin cover (insulating synthetic resin cover 7) are preferably joined only in the peripheral region.
  • the expansion and contraction of the insulating resin layer 5 due to a temperature change is allowable as well as the effect of a highly flexible bonding material. Generation of internal stress in the resin layer 5 can be further suppressed.
  • the auxiliary insulation plate 6 and the insulating resin cover (insulating synthetic resin cover 7) can be joined only in the peripheral region with a bonding material having low flexibility.
  • the auxiliary insulation plate 6 and the insulating resin cover (insulating synthetic resin cover 7) may be bonded only in the peripheral region with a highly flexible bonding material.
  • it is not limited to the insulating synthetic resin cover 7 and is not particularly limited as long as it is an insulating resin cover such as a natural resin.
  • FIG. 6 is a schematic cross-sectional view of a flat panel X-ray detector (FPD) according to the third embodiment.
  • FPD flat panel X-ray detector
  • the thickness of the insulating resin layer 5 was uniform at the location where the common electrode 3 was formed.
  • the FPD has a structure in which the FPDs according to the first and second embodiments and FIG. 11 (Patent Document 3) are combined.
  • the thickness of the insulating resin layer 5 in the radiation detection effective area SA is that of the insulating resin layer 5 in the peripheral region outside the radiation detection effective area SA. It is formed thinner than the thickness.
  • the thickness of the insulating resin layer 5 in the radiation detection effective area SA is the thin film TA
  • the thickness of the insulating resin layer 5 in the peripheral region is the thick film ta.
  • the attenuation of radiation (X-rays in Examples 1 to 4) by the insulating resin layer 5 is suppressed as much as possible. Can do.
  • the thickness (thin film) TA of the insulating resin layer 5 in the radiation detection effective area SA is usually in the range of 0.1 mm to 1.0 mm, and the thickness (thick film) ta of the insulating resin layer 5 in the peripheral area is Usually, it is in the range of 1 mm to 2 mm.
  • the insulating synthetic resin cover 7 is integrally formed by being recessed in the radiation detection effective area SA, and the insulating auxiliary is provided in the recessed portion 7A where the insulating synthetic resin cover 7 is recessed.
  • the plate 6 is placed and joined.
  • the thickness (thin film) TA of the insulating resin layer 5 in the radiation detection effective area SA is formed to be thinner than the thickness (thick film) ta of the insulating resin layer 5 in the peripheral region by an amount corresponding to the depression of the insulating synthetic resin cover 7. be able to.
  • the insulating auxiliary plate 6 and the insulating synthetic resin cover 7 joined to the opening 21A of the fixed frame 21 where the radiation detection effective area SA is opened are joined from the inside.
  • the insulating synthetic resin cover 7, the insulating auxiliary plate 6, and the fixing frame 21 are laminated in this order.
  • the thickness (thin film) TA of the insulating resin layer 5 in the radiation detection effective area SA is determined by the amount of the insulating auxiliary plate 6 and the insulating synthetic resin cover 7 recessed inward from the fixed frame 21. Can be formed thinner than the thickness (thick film) ta.
  • the fixed frame 21 corresponds to the fixed frame in the present invention.
  • the fixing frame 21 may be the same polymer resin as the insulating synthetic resin cover 7, or may be the same PC resin or ABS resin as the spacer 9, or separate from the insulating synthetic resin cover 7 and the spacer 9. It may be a member. Further, the spacer 9 and the fixed frame 21 may be integrally formed.
  • a combination of the auxiliary insulation plate 6 and the insulating synthetic resin cover 7 joined only at the peripheral region is combined.
  • a combination of the auxiliary insulating plate 6 and the insulating synthetic resin cover 7 bonded together by the bonding material 8 may be combined on the entire surface including the effective detection area SA. Further, as described in the first embodiment, it is not limited to the insulating synthetic resin cover 7 and is not particularly limited as long as it is an insulating resin cover such as a natural resin.
  • FIG. 7 is a schematic sectional view of a flat panel X-ray detector (FPD) according to the fourth embodiment. Portions common to the above-described first to third embodiments are denoted by the same reference numerals, description thereof is omitted, and illustration is omitted.
  • FPD flat panel X-ray detector
  • a buffer material 22 made of an elastic material is interposed between the auxiliary insulating plate 6 and the insulating synthetic resin cover 7 as shown in FIG.
  • rubber or sponge is used for the buffer material 22.
  • the internal stress in the insulating resin layer 5 can be uniformly dispersed by the buffer material 22.
  • the cushioning material 22 corresponds to the cushioning material in this invention.
  • the bonding materials 8a and 8b are provided on both surfaces of the buffer material 22, and the auxiliary insulation plate 6 and the buffer material 22 are connected by the bonding material 8a.
  • the insulating synthetic resin cover 7 and the buffer material 22 are bonded together by the bonding material 8b, whereby the auxiliary insulating plate 6 and the insulating synthetic resin cover 7 are bonded.
  • a buffer material 22 is interposed between the auxiliary insulation plate 6 and the insulating synthetic resin cover 7 so as to be outside the radiation detection effective area SA.
  • the insulating auxiliary plate 6 and the insulating synthetic resin cover 7 are directly bonded by the bonding material 8c.
  • the bonding materials 8 a and 8 b are provided on both surfaces of the buffer material 22, and the auxiliary insulation plate 6 and the buffer material 22 are connected to the bonding material.
  • the insulating auxiliary resin plate 6 and the insulating synthetic resin cover 7 are bonded together by bonding the insulating synthetic resin cover 7 and the buffer material 22 with the bonding material 8b.
  • the auxiliary insulating plate 6 and the insulating synthetic resin cover 7 are directly bonded by the bonding material 8c.
  • the cushioning material 22 may be conductive.
  • the conductive buffer material 22 may be formed by mixing a conductive filler into the rubber or sponge described above, or the conductive buffer material 22 may be formed by processing the conductive material such as carbon so as to have elasticity. It may be formed. If the buffer material 22 is conductive, static electricity accumulated between the auxiliary insulation plate 6 and the insulating synthetic resin cover 7 can be discharged, and an electrostatic noise prevention effect can be obtained. Of course, the buffer material 22 does not need to be conductive.
  • the auxiliary insulation plate 6 and the insulating synthetic resin cover 7 are joined to the bonding material 8 over the entire surface including the radiation detection effective area SA.
  • (8a, 8b) was combined, you may combine what joined the insulation auxiliary
  • FIG. Further, as described in the first embodiment, it is not limited to the insulating synthetic resin cover 7 and is not particularly limited as long as it is an insulating resin cover such as a natural resin.
  • the present invention is not limited to the above embodiment, and can be modified as follows.
  • the X-ray detector is taken as an example of the radiation detector.
  • the radiation detector for example, a gamma ray detector
  • the radiation detector that detects radiation other than the X-ray (for example, gamma ray) is also described. Applicable.
  • the insulating auxiliary plate 6 and the insulating resin cover are bonded by the bonding material 8 at least in the peripheral region.
  • the insulating auxiliary plate 6 and the insulating resin cover may be bonded to the area SA only by the bonding material 8. Including the case where the insulating auxiliary plate 6 and the insulating resin cover (insulating synthetic resin cover 7) are bonded by the bonding material 8 over the entire surface including the radiation detection effective area SA as in the first embodiment, at least in the detection effective area SA.
  • the insulating resin layer 5 is recessed due to curing or weighting, and accordingly, the insulating resin cover (insulating synthetic resin cover 7) in the detection effective area SA may also be recessed, so that at least the detection effective area SA is insulated.
  • the bonding material 8 By joining the plate 6 and the insulating resin cover (insulating synthetic resin cover 7) with the bonding material 8, the dent of the insulating resin cover (insulating synthetic resin cover 7) can be prevented.
  • the matrix substrate and the auxiliary insulation plate are made of glass, but are not particularly limited as long as they can be an insulating base material as exemplified by a plastic film.
  • the lead wire 4 passes through the spacer 9 and is taken out from the side surface. May be.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention concerne un détecteur de rayonnement (FPD) caractérisé en ce que, du fait qu'une plaque auxiliaire isolante (6) est formée d'un matériau présentant une élasticité et un coefficient de dilatation thermique similaires à ceux d'un substrat (1) de matrice active, et que des couches (une couche (2) semi-conductrice, une électrode commune (3), une couche (5) de résine isolante et une couverture (7) en résine synthétique isolante) sont prises en sandwich entre le substrat (1) de matrice active et la plaque auxiliaire isolante (6), le gauchissement du détecteur de rayonnement (FPD) et la fissuration des couches en raison d'un changement de température peuvent être empêchés. En outre, comme la couverture (7) en résine synthétique isolante est formée d'un matériau présentant une élasticité et un coefficient de dilatation thermique similaires à ceux de la couche (5) de résine isolante, une contrainte due à un changement de température n'est pas facilement générée, et une contrainte interne n'est pas facilement accumulée dans la couche (5) de résine isolante. Lorsque la plaque auxiliaire isolante (6) et la couverture (7) en résine synthétique isolante sont collées l'une à l'autre à l'aide d'un matériau (8) de collage, une structure du détecteur de rayonnement (FPD) peut être obtenue avec la couverture (7) nouvellement décrite en résine synthétique isolante. Il est ainsi possible d'obtenir un détecteur de rayonnement (FPD) doté d'une longue durée de vie utile même en présence d'un changement environnemental.
PCT/JP2011/006656 2011-11-29 2011-11-29 Détecteur de rayonnement WO2013080251A1 (fr)

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PCT/JP2011/006656 WO2013080251A1 (fr) 2011-11-29 2011-11-29 Détecteur de rayonnement

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Application Number Priority Date Filing Date Title
PCT/JP2011/006656 WO2013080251A1 (fr) 2011-11-29 2011-11-29 Détecteur de rayonnement

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WO2013080251A1 true WO2013080251A1 (fr) 2013-06-06

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018017685A (ja) * 2016-07-29 2018-02-01 株式会社島津製作所 放射線検出器
WO2024185152A1 (fr) * 2023-03-07 2024-09-12 キヤノン株式会社 Dispositif de détection de rayonnement, son procédé de fabrication et dispositif de tomodensitométrie à rayonnement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005351650A (ja) * 2004-06-08 2005-12-22 Shimadzu Corp フラットパネル型放射線検出器の製造方法及びフラットパネル型放射線検出器
WO2006046434A1 (fr) * 2004-10-28 2006-05-04 Sharp Kabushiki Kaisha Dispositif de détection d’image bidimensionnelle et méthode de fabrication de celui-ci
JP2009105201A (ja) * 2007-10-23 2009-05-14 Fujifilm Corp 画像検出器
WO2010029617A1 (fr) * 2008-09-10 2010-03-18 株式会社島津製作所 Détecteur de rayonnement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005351650A (ja) * 2004-06-08 2005-12-22 Shimadzu Corp フラットパネル型放射線検出器の製造方法及びフラットパネル型放射線検出器
WO2006046434A1 (fr) * 2004-10-28 2006-05-04 Sharp Kabushiki Kaisha Dispositif de détection d’image bidimensionnelle et méthode de fabrication de celui-ci
JP2009105201A (ja) * 2007-10-23 2009-05-14 Fujifilm Corp 画像検出器
WO2010029617A1 (fr) * 2008-09-10 2010-03-18 株式会社島津製作所 Détecteur de rayonnement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018017685A (ja) * 2016-07-29 2018-02-01 株式会社島津製作所 放射線検出器
WO2024185152A1 (fr) * 2023-03-07 2024-09-12 キヤノン株式会社 Dispositif de détection de rayonnement, son procédé de fabrication et dispositif de tomodensitométrie à rayonnement

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