JP4940098B2 - 画像検出器 - Google Patents
画像検出器 Download PDFInfo
- Publication number
- JP4940098B2 JP4940098B2 JP2007275159A JP2007275159A JP4940098B2 JP 4940098 B2 JP4940098 B2 JP 4940098B2 JP 2007275159 A JP2007275159 A JP 2007275159A JP 2007275159 A JP2007275159 A JP 2007275159A JP 4940098 B2 JP4940098 B2 JP 4940098B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- image detector
- substrate
- adhesive member
- active matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 153
- 239000000853 adhesive Substances 0.000 claims description 61
- 230000001070 adhesive effect Effects 0.000 claims description 61
- 239000011159 matrix material Substances 0.000 claims description 38
- 230000001681 protective effect Effects 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 34
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 129
- 239000010410 layer Substances 0.000 description 60
- 230000005855 radiation Effects 0.000 description 53
- 239000011229 interlayer Substances 0.000 description 40
- 239000000463 material Substances 0.000 description 12
- 238000000059 patterning Methods 0.000 description 9
- 239000011669 selenium Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Description
は層間絶縁膜12が形成されるが、図14に示すように、配線21が引き出されない部分には層間絶縁膜12は形成されない。よって、第5の実施形態の放射線画像検出器のTFTアレイ基板10の層間絶縁膜12は、図15に示すようなパターンとなる。
2 走査配線
3 データ配線
4 TFTスイッチ
5 電荷蓄積容量
6 半導体層
7 バイアス電極
8 チャネル層
9 コンタクト層
10,100 TFTアレイ基板
11 電荷収集電極
12 層間絶縁膜(有機絶縁膜)
12a 開口部
13 接続電極
14 Cs電極
15 ゲート絶縁膜
16 コンタクトホール
17 絶縁保護膜
18 保護基板
19 無機絶縁膜
20 下引き層
21 配線
25 絶縁性接着部材
Claims (6)
- 基板上に多数のスイッチング素子が配列されたアクティブマトリクス基板と、
画像情報を担持した電磁波の照射に応じて電荷を発生し、該電荷が前記アクティブマトリクス基板によって読み出されるよう前記アクティブマトリクス基板上に配置された半導体層と、
前記アクティブマトリクス基板と対向して配置された保護基板と、
前記保護基板と前記アクティブマトリクス基板とを接着する絶縁性接着部材とを有し、
前記絶縁性接着部材が、前記半導体層周縁の領域に配置された無機絶縁膜を介して前記アクティブマトリクス基板に接着されるとともに、
前記保護基板が、前記スイッチング素子と前記半導体層とを電気的に絶縁分離するために前記スイッチング素子上に設けられた有機絶縁膜を介して前記アクティブマトリクス基板に接着されていることを特徴とする画像検出器。 - 前記有機絶縁膜が、前記絶縁性接着部材との接着部分に複数の開口部が設けられたものであり、
該有機絶縁膜の開口部に前記無機絶縁膜が配置されていることを特徴とする請求項1記載の画像検出器。 - 前記有機絶縁膜の開口部が、該開口部を介して前記絶縁性接着部材と前記無機絶縁膜とが接触する範囲の面積が、前記絶縁性接着部材と前記アクティブマトリクス基板とが接触する範囲の面積の20%以上80%以下であることを特徴とする請求項2記載の画像検出器。
- 前記アクティブマトリクス基板が、前記半導体層の周辺領域まで延設された多数の信号配線を有し、
前記有機絶縁膜が、前記半導体層の周辺領域のうちの前記信号配線を含む一部の領域に設けられ、
該有機絶縁膜が設けられた一部の領域以外の領域に前記無機絶縁膜が配置されていることを特徴とする請求項1記載の画像検出器。 - 前記絶縁性接着部材と前記無機絶縁膜とが接触する範囲の面積が、前記絶縁性接着部材と前記アクティブマトリクス基板とが接触する範囲の面積の20%以上80%以下であることを特徴とする請求項4記載の画像検出器。
- 前記無機絶縁膜が、SiNx膜であることを特徴とする請求項1から5いずれか1項記載の画像検出器。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007275159A JP4940098B2 (ja) | 2007-10-23 | 2007-10-23 | 画像検出器 |
US12/256,047 US7968883B2 (en) | 2007-10-23 | 2008-10-22 | Image detector |
TW097140381A TW200924182A (en) | 2007-10-23 | 2008-10-22 | Image detector |
EP08018512A EP2053658A3 (en) | 2007-10-23 | 2008-10-22 | Image detector |
CNA2008101708977A CN101419976A (zh) | 2007-10-23 | 2008-10-23 | 图像检测器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007275159A JP4940098B2 (ja) | 2007-10-23 | 2007-10-23 | 画像検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009105201A JP2009105201A (ja) | 2009-05-14 |
JP4940098B2 true JP4940098B2 (ja) | 2012-05-30 |
Family
ID=40042688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007275159A Active JP4940098B2 (ja) | 2007-10-23 | 2007-10-23 | 画像検出器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7968883B2 (ja) |
EP (1) | EP2053658A3 (ja) |
JP (1) | JP4940098B2 (ja) |
CN (1) | CN101419976A (ja) |
TW (1) | TW200924182A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013080251A1 (ja) * | 2011-11-29 | 2013-06-06 | 株式会社島津製作所 | 放射線検出器 |
JPWO2013080251A1 (ja) * | 2011-11-29 | 2015-04-27 | 株式会社島津製作所 | 放射線検出器 |
CN105097852A (zh) * | 2014-05-07 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和半导体器件 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3910341B2 (ja) * | 1999-08-04 | 2007-04-25 | シャープ株式会社 | 二次元画像検出器 |
JP3737343B2 (ja) * | 1999-09-08 | 2006-01-18 | シャープ株式会社 | 二次元画像検出器 |
JP4004761B2 (ja) * | 2001-01-18 | 2007-11-07 | シャープ株式会社 | フラットパネル型イメージセンサ |
JP3788740B2 (ja) * | 2001-02-07 | 2006-06-21 | シャープ株式会社 | アクティブマトリクス基板および電磁波検出器 |
US6891194B2 (en) * | 2001-02-07 | 2005-05-10 | Sharp Kabushiki Kaisha | Active matrix substrate, electromagnetic detector, and liquid crystal display apparatus |
JP3678162B2 (ja) * | 2001-04-12 | 2005-08-03 | 株式会社島津製作所 | 放射線検出装置 |
JP4066972B2 (ja) * | 2004-03-30 | 2008-03-26 | 株式会社島津製作所 | フラットパネル型放射線検出器 |
JP4266898B2 (ja) * | 2004-08-10 | 2009-05-20 | キヤノン株式会社 | 放射線検出装置とその製造方法および放射線撮像システム |
JP2006054232A (ja) * | 2004-08-10 | 2006-02-23 | Toshiba Electron Tubes & Devices Co Ltd | X線検出器およびその製造方法 |
WO2006046434A1 (ja) * | 2004-10-28 | 2006-05-04 | Sharp Kabushiki Kaisha | 二次元画像検出装置およびその製造方法 |
JP2007214236A (ja) * | 2006-02-08 | 2007-08-23 | Toshiba Corp | X線検出器の製造方法およびx線検出器 |
CN101390213B (zh) * | 2006-02-23 | 2010-06-16 | 株式会社岛津制作所 | 放射线检测器 |
-
2007
- 2007-10-23 JP JP2007275159A patent/JP4940098B2/ja active Active
-
2008
- 2008-10-22 US US12/256,047 patent/US7968883B2/en active Active
- 2008-10-22 TW TW097140381A patent/TW200924182A/zh unknown
- 2008-10-22 EP EP08018512A patent/EP2053658A3/en not_active Withdrawn
- 2008-10-23 CN CNA2008101708977A patent/CN101419976A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
EP2053658A3 (en) | 2012-05-09 |
US7968883B2 (en) | 2011-06-28 |
US20090101907A1 (en) | 2009-04-23 |
EP2053658A2 (en) | 2009-04-29 |
JP2009105201A (ja) | 2009-05-14 |
CN101419976A (zh) | 2009-04-29 |
TW200924182A (en) | 2009-06-01 |
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