WO2013078921A1 - 薄膜晶体管液晶显示器的亚像素结构及液晶显示器 - Google Patents

薄膜晶体管液晶显示器的亚像素结构及液晶显示器 Download PDF

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WO2013078921A1
WO2013078921A1 PCT/CN2012/082695 CN2012082695W WO2013078921A1 WO 2013078921 A1 WO2013078921 A1 WO 2013078921A1 CN 2012082695 W CN2012082695 W CN 2012082695W WO 2013078921 A1 WO2013078921 A1 WO 2013078921A1
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sub
liquid crystal
domain
electrode
pixel
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PCT/CN2012/082695
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English (en)
French (fr)
Inventor
陈希
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北京京东方光电科技有限公司
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Priority to US13/704,305 priority Critical patent/US9383617B2/en
Publication of WO2013078921A1 publication Critical patent/WO2013078921A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134381—Hybrid switching mode, i.e. for applying an electric field with components parallel and orthogonal to the substrates

Definitions

  • Embodiments of the present invention relate to a sub-pixel structure of a thin film transistor liquid crystal display and a liquid crystal display. Background technique
  • TFT-LCD Thin Film Transistor
  • the TFT-LCD display panel is formed by a pair of array substrates and a counter substrate (for example, a color filter substrate), which are vacuum-charged and then filled with a liquid crystal material.
  • the display screen of the TFT-LCD is formed with an array of pixel structures composed of hundreds of thousands to millions of pixel structures which are displayed by the control of the TFT.
  • ADS has been widely used due to its wide viewing angle.
  • ADS is ADSDS
  • ADvanced Super Dimension Switch which is an advanced super-dimensional field conversion technology, generates a multi-dimensional electric field through the electric field, so that all the liquid crystal molecules in the liquid crystal cell and all the liquid crystal molecules directly above the electrode can rotate, thereby improving the liquid crystal. Work efficiency and increase light transmission efficiency.
  • Advanced super-dimensional field switching technology can improve the picture quality of TFT-LCD products, with high resolution, high transmittance, low power consumption, wide viewing angle, high aperture ratio, low chromatic aberration, push mura, etc. advantage.
  • a pixel structure of a TFT-LCD of an ADS mode generally includes a plurality of sub-pixel structures.
  • 1 shows a configuration of a conventional sub-pixel structure on an array substrate, which includes: gate lines 10 and data lines 20 which are orthogonal to each other, and a thin film transistor 30 located at an intersection of the gate lines 10 and the data lines 20,
  • the pixel electrode 40 i.e., a plate electrode
  • the common electrode 50 i.e., a plurality of strip electrodes
  • the thin film transistor 30 is located above the gate line, and the gate electrode of the thin film transistor 30 is connected to the gate line 10.
  • the drain electrode of the thin film transistor 30 is connected to the data line 20, and the source electrode of the thin film transistor 30 is connected to the sub-pixel electrode 40.
  • Sub-pixel The electrode 40 and the common electrode 50 overlap each other.
  • the liquid crystal electric field generated between the common electrode 50 and the sub-pixel electrode 40 is a multi-dimensional electric field.
  • the direction is the same. All of the common electrodes 50 in this sub-pixel structure have the same direction, that is, a domain (1-Domain) structure. In this configuration, since the direction of the multi-dimensional liquid crystal electric field generated between the common electrode 50 and the sub-pixel electrode 40 is uniform, the liquid crystal molecules are deflected in the same direction in one sub-pixel structure, resulting in a color deviation.
  • the sub-pixel structure of the ADS mode TFT-LCD currently uses a two-domain structure.
  • Fig. 2 shows the construction of a dual domain sub-pixel structure of an existing ADS mode TFT-LCD on an array substrate.
  • the sub-pixel structure of the ADS mode TFT-LCD includes on the array substrate: a gate line 10, a data line 20, a thin film transistor 30, a sub-pixel electrode 40, and a common electrode 50.
  • the common electrode 60 of the two-domain sub-pixel structure includes two strip-shaped common electrodes 61 and 62 of different orientations.
  • the first domain liquid crystal electric field direction generated between the strip-shaped common electrode 61 and the sub-pixel electrode 40 is different from the second domain liquid crystal electric field direction generated between the strip-shaped common electrode 62 and the sub-pixel electrode 40. Since the direction of the liquid crystal electric field generated between the common electrode 50 and the sub-pixel electrode 60 is divided into two domains, the liquid crystal molecules can be deflected in two different directions, which can effectively improve the color shift problem.
  • Embodiments of the present invention provide a sub-pixel structure of a thin film transistor liquid crystal display, including: a gate line formed on an array substrate, a data line, a thin film transistor, a sub-pixel electrode, and a common electrode, wherein the sub-pixel electrode Between the common electrodes, a first domain liquid crystal electric field and a second domain liquid crystal electric field respectively located on both sides of the gate line, between the direction of the first domain liquid crystal electric field and the direction of the second domain liquid crystal electric field are generated The angle is greater than zero. And less than 180. .
  • Another embodiment of the present invention provides a liquid crystal display including the above sub-pixel structure.
  • FIG. 1 is a top plan view showing a configuration of a 1-Domain sub-pixel structure on an array substrate in the prior art
  • FIG. 2 is a top plan view showing a structure of a dual-domain sub-pixel structure on an array substrate in the prior art
  • FIG. 3 is a top plan view showing a structure of a sub-pixel structure on an array substrate according to an embodiment of the present invention
  • FIG. 4 is a top plan view showing a configuration of a sub-pixel structure on an array substrate according to another embodiment of the present invention.
  • FIG. 5 is a flow chart showing a structure of a pixel structure on an array substrate in an embodiment of the present invention.
  • FIG. 6 is a schematic cross-sectional view of the sub-pixel structure of FIG. 3 on the array substrate taken along line A-A. detailed description
  • the sub-pixel structure of the thin film transistor liquid crystal display is a two-domain sub-pixel structure capable of forming a two-domain liquid crystal electric field, wherein the gate line is located at the boundary of the two-domain liquid crystal electric field, that is, the sub-pixel electrode and the common electrode
  • the first domain liquid crystal electric field and the second domain liquid crystal electric field generated between the two are respectively located on both sides of the gate line.
  • the angle between the direction of the first domain liquid crystal electric field and the direction of the second domain liquid crystal electric field is greater than 0° and less than 180°.
  • a dark region is easily formed on the display screen at the boundary of the two-domain liquid crystal electric field, and a black matrix is disposed on the color filter substrate of the TFT-LCD corresponding to the gate line, that is, the TFT-LCD
  • the position on the display corresponding to the grid line is also a dark area.
  • the gate lines are disposed at the boundary of the two domains, thereby overlapping the two dark areas, thereby reducing the dark area in the display area of the TFT-LCD display and improving the double
  • the transmittance of the sub-pixel structure of the domain improves the picture quality.
  • the configuration of the sub-pixel structure of the TFT-LCD in the embodiment of the present invention on the array substrate includes: mutually orthogonal gate lines 110 and data lines 120, and a thin film located at the intersection of the gate lines 110 and the data lines 120.
  • the transistor 130 is located at the sub-pixel electrode 140 and the common electrode 160 in a region surrounded by the gate line 110 and the data line 120.
  • the sub-pixel electrode 140 and the common electrode 160 are disposed to overlap each other, and are electrically isolated by a passivation layer (not shown in FIG. 3).
  • the common electrode 160 includes two strip-shaped common electrodes 161 and 162 of different orientations, for example, a plate-shaped electrode.
  • the common electrode 160 is formed over the pixel electrode 140.
  • a first domain liquid crystal electric field is generated between the sub-pixel electrode 140 and the strip-shaped common electrode 161
  • a second domain liquid crystal electric field is generated between the sub-pixel electrode 140 and the strip-shaped common electrode 162
  • the first domain liquid crystal electric field and the second domain liquid crystal electric field are located on both sides of the gate line 10, respectively.
  • the common electrode 160 includes a first domain strip common electrode 161 for generating a first domain liquid crystal electric field and a second domain strip common electrode for generating a second domain liquid crystal electric field on both sides of the gate line 110, respectively. 162.
  • first domain strip common electrode 161 and the first domain strip common electrode 162 for generating different domain liquid crystal electric fields are respectively located on different sides of the gate line 110.
  • the gate line 110 is located at the boundary of the first domain strip common electrode 161 and the first domain strip common electrode 162.
  • the direction of the first domain liquid crystal electric field is different from the direction of the second domain liquid crystal electric field, that is, the sub-pixel structure of the TFT-LCD is a dual domain structure. Therefore, the angle between the direction of the first domain liquid crystal electric field and the direction of the second domain liquid crystal electric field is greater than 0° and less than 180°.
  • the direction of the liquid crystal electric field is determined by the strip-shaped common electrodes 161 and 162.
  • the angle between the direction of the first domain strip-shaped common electrode 161 and the direction of the second domain strip-shaped common electrode 162 is greater than zero. And less than 180. .
  • the thin film transistor 130 is located above the gate line 110, and the gate electrode of the thin film transistor 130 is connected to the gate line 110, and the drain electrode 132 of the thin film transistor 130 is connected to the data line 120.
  • the source electrode 131 of the thin film transistor 130 is connected to the sub-pixel electrode 140.
  • the sub-pixel electrode 140 and the common electrode 160 are located in a region surrounded by the gate line 110 and the data line 120. Both the first domain liquid crystal electric field and the second domain liquid crystal electric field are located on the same side of the data line 120.
  • the above dual domain sub-pixel structure further includes a black matrix corresponding to the gate line 110 on the color filter substrate.
  • the gate line 110 is located at the boundary of the two-domain liquid crystal electric field, that is, the liquid crystal electric fields of the different domains generated are respectively located on different sides of the gate line 110, as shown in FIG.
  • the thin film transistor 130 is located above the gate line 110, and the source electrode 131 and the drain electrode 132 of the thin film transistor 130 are respectively located on both sides above the center line of the gate line 110.
  • the source electrode 131 of the thin film transistor 130 The sub-pixel electrode 140 is connected only on one side of the gate line 110.
  • the process is deviated, and the gate-source parasitic capacitance Cgs is easily changed, which causes jumps in different display regions.
  • the voltage is different.
  • the display screen flickers (Flicker) or afterimages which affects the picture quality.
  • the structure of the thin film transistor is changed such that both ends of the source electrode of the thin film transistor are connected to the sub-pixel electrode.
  • the sub-pixel structure of the TFT-LCD includes, for example, a gate line 110, a data line 120, a thin film transistor 130, a sub-pixel electrode 140, and a common electrode 160 on the array substrate.
  • the sub-pixel structure of the TFT-LCD shown in FIG. 4 is different from the sub-pixel structure of the TFT-LCD shown in FIG. 3 in the thin film transistor 130, which is located above the gate line 110, and the film
  • the source electrode 131' of the transistor 130' has two end portions 13 ⁇ -1 and 13 ⁇ -2 respectively located on both sides of the axis line of the gate line 110, and both end portions 13 ⁇ -1 and 13 ⁇ -2 are connected to the sub-pixel electrode 140 connection.
  • the gate-source parasitic capacitance Cgs has a self-compensating effect.
  • the pixel structure 140 is fabricated, even if the Gate and SD two-layer process is deviated, no matter which direction is biased, because Cgs here is divided into the center line of the gate line 110. The two parts on the two sides, so the total Cgs does not change regardless of the process change, thus stabilizing the trip voltage A Vp, reducing the chance of flickering or residual image on the display, ensuring picture quality.
  • the source electrode 13'' is formed to be perpendicular to the gate line 110, and is symmetrical with respect to the center line of the gate line 110. In this way, Cg self-compensation is further guaranteed.
  • the structure of the drain electrode 132 of the thin film transistor 130 can also be changed.
  • the drain electrode 132 is also Located on both sides of the center line of the gate line 110, preferably, the drain electrode 132' is also symmetrical about the center line of the gate line 110.
  • FIG. 4 shows only the structure of a specific thin film transistor 130' according to an embodiment of the present invention.
  • the thin film transistor can self-compensate the gate-source parasitic capacitance Cgs.
  • the source electrode of the thin film transistor is located above the gate line, and there is 60 between the source electrode and the gate line.
  • the angle between the two ends of the source electrode and the sub-pixel electrode is respectively connected to the sub-pixel electrode, and the thin film transistor can self-compensate the gate-source parasitic capacitance Cgs.
  • Other thin film transistor structures are no longer classed.
  • the sub-pixel structure of the TFT-LCD of this embodiment is a dual domain structure.
  • the direction of the first domain liquid crystal electric field is different from the direction of the second domain liquid crystal electric field, and the mask process includes: patterning, photoresist coating, exposure, development, etching, and the like.
  • the fabrication process of the sub-pixel structure of the TFT-LCD includes: Step 501: Forming a gate line 110 on the base substrate 100.
  • the gate line 110 is formed on the substrate 100 by a mask process. Different from the existing two-domain sub-pixel structure, in this embodiment, the gate line 110 is formed at the boundary of the two-domain strip-shaped common electrode, that is, the strip-shaped common electrode 161 for generating the first domain liquid crystal electric field direction and is used for The strip-shaped common electrodes 162 which generate the second domain liquid crystal electric field direction are respectively located on both sides of the gate line 110, and therefore, in the mask pattern design process of the mask process, only the position of the pattern for forming the gate lines needs to be changed, so that The gate line to be formed is located at the boundary of the first domain strip common electrode 161 and the second domain strip common electrode 162 to be formed. Subsequent photoresist coating, exposure, development, etching, and the like are then performed according to the designed mask pattern to form the gate line 110 in this embodiment.
  • Step 502 The gate insulating layer 102 and the active layer 103 are sequentially formed.
  • the active layer 103 is, for example, a multilayer film including a-Si and n+-Si.
  • Step 503 Forming the data line 120 and the source electrode 131 and the drain electrode 132 of the thin film transistor 130.
  • the source electrode 131 and the drain electrode 132 of the thin film transistor 130 are on the active layer 103.
  • the mask process is still used. Since the thin film transistor is located above the gate line and the data line is connected to the drain electrode, when forming the pixel structure shown in FIG. 3, it is still only necessary to design the mask pattern in the mask process.
  • the position of the pattern for forming the data line and the source electrode, the drain electrode and the TFT channel of the thin film transistor is designed according to the position of the formed gate line 110, and then the subsequent photoresist coating is performed according to the designed pattern. , exposure, development, etching and other processes.
  • both ends of the source electrode of the thin film transistor are respectively connected to the sub-pixel electrode in a mask process, and preferably, the source electrode is formed to be perpendicular to the gate line. And the center line of the gate line is symmetrical.
  • the drain electrode is still connected to the data line, preferably The drain electrode is also symmetrical about the center line of the gate line.
  • Step 504 depositing a transparent conductive film and using a mask process to form a sub-pixel electrode 140.
  • the sub-pixel electrode 140 is connected to the drain electrode 132.
  • the transparent conductive film an indium tin oxide (ITO) and indium oxide (IZO) single layer film, or a multilayer film of the above materials may be used.
  • the material of the transparent conductive film includes: one or two of indium tin oxide (ITO) and indium oxide (IZO).
  • Step 505 Forming a passivation layer 104, and via holes on the passivation layer.
  • Step 506 depositing a transparent conductive film and using a mask process to form a common (Vcom) electrode 160.
  • the transparent conductive film deposited in this step can be identical to that in step 504.
  • a passivation layer 104 is included between the common electrode 150 and the sub-pixel electrode 140.
  • a TFT-LCD sub-pixel structure can be fabricated according to the above 1+4 mask process.
  • the embodiment of the present invention is not limited thereto, and a TFT-LCD sub-pixel structure can also be fabricated by using a 1+5 mask process. Since only the position of the gate line is changed, or the position of the gate line and the structure of the thin film transistor are changed, it is only necessary to modify the pattern design of the mask in the mask process, and other steps need not be changed. It can be seen that the formation process of the sub-pixel structure of the TFT-LCD in the prior art can be used to fabricate the sub-pixel structure of the TFT-LCD in the embodiment of the present invention.
  • the direction of the liquid crystal electric field per domain is determined by the common electrode, but the embodiment of the present invention is not limited thereto.
  • the direction of the electric field of each domain liquid crystal may also be determined by the sub-pixel electrode.
  • the sub-pixel electrode is divided into two domains, which are respectively located on both sides of the gate line, that is, the first field liquid crystal electric field is generated.
  • a domain sub-pixel electrode, and a second domain sub-pixel electrode that generates a second domain liquid crystal electric field are respectively located on both sides of the gate line.
  • the direction of the first domain liquid crystal electric field is different from the direction of the second domain liquid crystal electric field, that is, the angle between the direction of the first domain sub-pixel electrode and the direction of the second domain sub-pixel electrode is greater than zero. And less than 180. .
  • the common electrode is not domain-divided and is a layer of ITO electrodes.
  • the two-domain sub-pixel electrode still needs to be connected to the source electrode in the TFT, and may be connected only to one end of the source electrode.
  • the two ends of the source electrode may be respectively connected to the two ends of the source electrode.
  • First domain subpixel The electrode is connected to one end of the source electrode, and the second domain sub-pixel electrode is connected to the other end of the source electrode. Therefore, other structures in the sub-pixel structure of the TFT-LCD may be the same as those in the embodiment described above with reference to FIGS. 3, 4, and 6, and will not be described in detail.
  • the TFT in the sub-pixel structure of the TFT-LCD, the TFT is located above the gate line, so that the source electrode and the drain electrode of the TFT are both located above the gate line, but the embodiment of the present invention is not limited thereto.
  • the source electrode and the drain electrode of the TFT in the pixel structure of the TFT-LCD may be located below the gate line, or the source electrode and the drain electrode of the TFT may be located on the side of the gate line.
  • the specific positional relationship of the gate lines, the data lines, and the thin film transistors in the pixel structure of the TFT-LCD can be various.
  • the gate line in the sub-pixel structure of the TFT-LCD is located at the boundary of the two-domain liquid crystal electric field, that is, the first domain liquid crystal electric field is on one side of the gate line, and the second domain is on the other side of the gate line.
  • the liquid crystal electric field, the direction of the first domain liquid crystal electric field is different from the direction of the second domain liquid crystal electric field, and a black matrix having a light shielding effect above the boundary, so that the boundary between the two domain liquid crystal electric fields is formed in a dark area on the display screen
  • the overlap with the dark area formed by the gate line on the display screen reduces the dark area on the TFT-LCD display, improves the transmittance of the dual domain structure, and improves the picture quality.
  • the two ends of the source electrode of the thin film transistor are respectively connected to the sub-pixel electrode, so that the gate source parasitic capacitance Cgs can be self-compensated, and when the process of fabricating the pixel structure is deviated, the Cgs value is also No change, which stabilizes the trip voltage ⁇
  • the first member is located on one side of the third member
  • the vertical projection of the first member on the base substrate is on the side of the vertical projection of the third member on the base substrate.
  • the first member and the second member are respectively located on both sides of the third member” means that the vertical projections of the first member and the second member on the base substrate are respectively located in the vertical projection of the third member on the base substrate. On both sides.
  • first member above the second member herein is meant that the first member is further from the base substrate relative to the second member.
  • Embodiments of the present invention also provide a liquid crystal display comprising the sub-pixel structure of any of the above embodiments.
  • the liquid crystal display of the embodiment of the present invention is used, for example, for a liquid crystal television, a mobile phone, and a liquid crystal display. Display, GPS, etc.
  • the liquid crystal display further includes a backlight that provides backlighting for the array substrate.
  • a sub-pixel structure of a thin film transistor liquid crystal display comprising: a gate line formed on an array substrate, a data line, a thin film transistor, a sub-pixel electrode, and a common electrode, wherein the sub-pixel electrode and the common electrode A first domain liquid crystal electric field and a second domain liquid crystal electric field respectively located on both sides of the gate line are generated, and an angle between a direction of the first domain liquid crystal electric field and a direction of the second domain liquid crystal electric field is generated More than 0° and less than 180°.
  • the common electrode includes a first domain common electrode and a second domain common electrode respectively located on both sides of the gate line, the first domain common electrode and the The first domain liquid crystal electric field is generated between the sub-pixel electrodes, and the second domain liquid crystal electric field is generated between the second domain common electrode and the sub-pixel electrode.
  • the sub-pixel electrode includes a first domain sub-pixel electrode and a second domain sub-pixel electrode respectively located on both sides of the gate line, the first domain sub- A sub-pixel electrode of the first domain liquid crystal electric field is generated between the pixel electrode and the common electrode, and the second domain liquid crystal electric field is generated between the second domain sub-pixel electrode and the common electrode.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
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  • Engineering & Computer Science (AREA)
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  • Thin Film Transistor (AREA)

Abstract

一种薄膜晶体管液晶显示器的亚像素结构及液晶显示器。亚像素结构包括：形成在阵列基板上的栅线（110），数据线（120），薄膜晶体管（130），亚像素电极（140），以及公共电极（160），其中亚像素电极（140）与公共电极（160）之间产生分别位于栅线（110）的两侧的第一畴液晶电场以及第二畴液晶电场，第一畴液晶电场的方向与第二畴液晶电场的方向之间的夹角大于0°且小于180°。

Description

薄膜晶体管液晶显示器的亚像素结构及液晶显示器 技术领域
本发明的实施例涉及薄膜晶体管液晶显示器的亚像素结构及液晶显示 器。 背景技术
薄月莫晶体管液晶显示器 ( Thin Film Transistor -Liquid Crystal Dislay, TFT-LCD ) 因其体积小、 重量轻、 功耗低且无辐射等优点在目前的平板显示 器市场占据了主导地位。 TFT-LCD显示屏是由阵列基板和对置基板（例如， 彩膜基板）对盒， 其间抽真空后封灌液晶材料而形成。 TFT-LCD的显示屏形 成有由几十万到上百万的像素结构的构成的像素结构阵列， 这些像素结构通 过 TFT的控制来显示图形。
目前， ADS 由于具有广视角的优点已被广泛应用。 ADS 是 ADSDS
( ADvanced Super Dimension Switch ) 的简称， 即高级超维场转换技术， 通 生的电场形成多维电场， 使液晶盒内条状电极间、 电极正上方所有取向液晶 分子都能够产生旋转， 从而提高了液晶工作效率并增大了透光效率。 高级超 维场开关技术可以提高 TFT-LCD产品的画面品质， 具有高分辨率、 高透过 率、 低功耗、 宽视角、 高开口率、 低色差、 无挤压水波紋（push Mura )等优 点。
通常 ADS模式的 TFT-LCD的像素结构包含多个亚像素结构。 图 1示出 了现有的亚像素结构在阵列基板上的构造，其包括：相互正交的栅线 10和数 据线 20、位于栅线 10与数据线 20的交叉区域的薄膜晶体管 30,亚像素电极 40 (即为板状电极 ) , 以及公共电极 50 (即为多个条状电极）形成在栅线 10 与数据线 20围成的区域中。 其中， 薄膜晶体管 30位于栅线上方， 且薄膜晶 体管 30的栅电极与栅线 10连接，薄膜晶体管 30的漏电极与数据线 20连接， 薄膜晶体管 30的源电极与亚像素电极 40连接； 亚像素电极 40与公共电极 50彼此重叠。公共电极 50与亚像素电极 40之间产生的液晶电场为多维电场， 方向是一致的。这种亚像素结构中的所有公共电极 50的方向一致， 即为一畴 ( 1 -Domain )结构。 这种结构中， 由于公共电极 50与亚像素电极 40之间产 生的多维液晶电场方向一致， 导致了在一个亚像素结构中液晶分子偏转方向 一致， 造成了颜色的偏差。
为解决上述色偏问题， 目前 ADS模式的 TFT-LCD的亚像素结构釆用双 畴结构。 图 2示出了现有的 ADS模式 TFT-LCD的双畴亚像素结构在阵列基 板上的构造。 如图 2所示， ADS模式的 TFT-LCD的亚像素结构在阵列基板 上包括： 栅线 10, 数据线 20, 薄膜晶体管 30, 亚像素电极 40, 以及公共电 极 50。 与 1-Domain亚像素结构的公共电极 50不同， 双畴亚像素结构的公共 电极 60包含两种不同取向的条状公共电极 61和 62。 条状公共电极 61的与 亚像素电极 40之间产生的第一畴液晶电场方向不同于条状公共电极 62与亚 像素电极 40之间产生的第二畴液晶电场方向。 由于公共电极 50与亚像素电 极 60之间产生的液晶电场方向分为两畴，这样液晶分子可在两个不同方向偏 转， 可以有效改善色偏问题。
但是， 由于在两畴的交界处液晶的偏转方向处于不均一的状态， 在显示 屏的显示区域产生了暗区。
可见，现有的具有双畴亚像素结构的 ADS模式的 TFT-LCD中易出现暗 区， 液晶显示器的画面质量还不是艮好。 发明内容
本发明的实施例提供一种薄膜晶体管液晶显示器的亚像素结构， 包括： 形成在阵列基板上的栅线， 数据线， 薄膜晶体管， 亚像素电极， 以及公共电 极， 其中所述亚像素电极与所述公共电极之间产生分别位于所述栅线的两侧 的第一畴液晶电场以及第二畴液晶电场， 所述第一畴液晶电场的方向与所述 第二畴液晶电场的方向之间的夹角大于 0。 且小于 180。 。
本发明的另一实施例提供一种包括上述亚像素结构的液晶显示器。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例或现有技 术描述中所需要使用的附图作简单地介绍， 显而易见地， 下面描述中的附图 仅仅涉及本发明的一些实施例， 并非对本发明的限制。
图 1为现有技术中 1-Domain亚像素结构在阵列基板上的构造的俯视示 意图；
图 2为现有技术中双畴亚像素结构在阵列基板上的构造的俯视示意图； 图 3为本发明的一实施例的亚像素结构在阵列基板上的构造的俯视示意 图；
图 4为本发明的另一实施例的亚像素结构在阵列基板上的构造的俯视示 意图；
图 5为本发明的实施例中像素结构在阵列基板上的构造的制作流程图； 图 6为图 3 中的亚像素结构在阵列基板上的构造沿 A-A线的截面示意 图。 具体实施方式
下面将结合附图，对本发明实施例中的技术方案进行清楚、完整地描述， 显然， 所描述的实施例仅仅是本发明一部分实施例， 而不是全部的实施例。 基于本发明中的实施例， 本领域普通技术人员在没有做出创造性劳动前提下 所获得的所有其他实施例， 都属于本发明保护的范围。
在本发明的一个实施例中， 薄膜晶体管液晶显示器的亚像素结构为能够 形成两畴液晶电场的两畴亚像素结构，其中，栅线位于两畴液晶电场交界处， 即亚像素电极与公共电极之间产生的第一畴液晶电场以及第二畴液晶电场分 别位于栅线的两侧。 其中， 第一畴液晶电场的方向与第二畴液晶电场的方向 之间的夹角大于 0° 且小于 180° 。
在双畴亚像素结构中， 在两畴液晶电场的交界处， 易在显示屏上形成暗 区， 而 TFT-LCD的彩膜基板上与栅线对应的位置上有黑矩阵， 即 TFT-LCD 显示屏上与栅线对应的位置也为暗区。 在本申请的实施例中， 将栅线设置在 两畴交界处， 从而将上述两处暗区进行了重叠， 这样， 减少了 TFT-LCD显 示屏的显示区域中的暗区面积， 提高了双畴亚像素结构的透过率， 同时提高 了画面质量。
下面的描述主要针对单个亚像素结构进行， 但是其他的亚像素结构可以 相同地形成。 参见图 3 ,本发明的实施例中的 TFT-LCD的亚像素结构在阵列基板上的 构造包括： 相互正交的栅线 110和数据线 120, 位于栅线 110和数据线 120 交叉区域的薄膜晶体管 130, 位于栅线 110与数据线 120围成的区域中的亚 像素电极 140以及公共电极 160。 其中， 亚像素电极 140与公共电极 160交 叠设置， 两者之间通过钝化层（图 3中未示出） 电性隔离。 公共电极 160包 含两种不同取向的条状公共电极 161和 162, 亚像素电极 140例如为板状电 极。 公共电极 160形成在像素电极 140上方。
亚像素电极 140与条状公共电极 161之间产生第一畴液晶电场， 亚像素 电极 140与条状公共电极 162之间产生第二畴液晶电场， 且第一畴液晶电场 与第二畴液晶电场分别位于栅线 10的两侧。
具体地， 公共电极 160包括分别位于栅线 110的两侧的用于产生第一畴 液晶电场的第一畴条状公共电极 161以及用于产生第二畴液晶电场的第二畴 条状公共电极 162。
可见， 用于产生不同畴液晶电场的第一畴条状公共电极 161与第一畴条 状公共电极 162分别位于栅线 110的不同侧。 换句话说， 栅线 110位于第一 畴条状公共电极 161与第一畴条状公共电极 162的交界处。
其中， 第一畴液晶电场的方向与第二畴液晶电场的方向不同， 即该 TFT-LCD的亚像素结构为双畴结构。 因此， 第一畴液晶电场的方向与第二畴 液晶电场的方向的夹角大于 0° 且小于 180° 。 这里， 液晶电场的方向由条 状公共电极 161和 162来决定。 第一畴条状公共电极 161的方向与第二畴条 状公共电极 162的方向之间的夹角大于 0。 且小于 180。 。
在上述亚像素结构中， 请同时参见图 3和 6, 薄膜晶体管 130位于栅线 110上方， 且薄膜晶体管 130的栅电极与栅线 110连接， 薄膜晶体管 130的 漏电极 132与数据线 120连接， 薄膜晶体管 130的源电极 131与亚像素电极 140连接。 亚像素电极 140以及公共电极 160位于栅线 110与数据线 120所 围成的区域。 第一畴液晶电场以及第二畴液晶电场均位于数据线 120的同一 侧。
上述双畴亚像素结构还包括在彩膜基板上与栅线 110对应的的黑矩阵。 在本发明的实施例的亚像素结构中，栅线 110位于两畴液晶电场交界处， 即产生的不同畴的液晶电场分别位于栅线 110 的不同侧， 在如图 3 所示的 TFT-LCD的亚像素结构中， 薄膜晶体管 130位于栅线 110上方， 薄膜晶体管 130的源电极 131和漏电极 132分别位于栅线 110中心线上方的两侧，可见， 薄膜晶体管 130的源电极 131仅在栅线 110的一侧与亚像素电极 140连接。 这样， 在制作 TFT-LCD时， 当制作栅极层（Gate )与源漏级层 ( SD ) 时工 艺发生了偏差， 栅源寄生电容 Cgs很容易发生变化， 这样导致了不同显示区 域的跳变电压有所不同，当跳变电压较大时，导致显示画面出现闪烁（ Flicker ) 或者残像发生， 影响了画面质量。
因此， 为进一步提高 TFT-LCD的画面质量时， 本发明的另一实施例中， 对薄膜晶体管的结构进行了改变， 使得薄膜晶体管的源电极的两端都与亚像 素电极连接。 参见图 4, 该 TFT-LCD的亚像素结构在阵列基板上例如包括： 栅线 110, 数据线 120, 薄膜晶体管 130，， 亚像素电极 140, 以及公共电极 160。
图 4所示的 TFT-LCD的亚像素结构与图 3所示的 TFT-LCD的亚像素结 构的不同之处在于薄膜晶体管 130，，该薄膜晶体管 130，位于栅线 110的上方， 并且， 薄膜晶体管 130'的源电极 131 '具有分别位于栅线 110的轴心线两侧的 两个端部 13Γ-1和 13Γ-2, 且两个端部 13Γ-1和 13Γ-2都与亚像素电极 140 连接。
这样， 栅源寄生电容 Cgs有自补偿的作用， 当制作像素结构 140时， 即 使 Gate与 SD两层工艺发生偏差， 无论是往哪个方向偏差， 因为这里的 Cgs 是分为栅线 110的中心线两侧的两部分， 因此不管工艺如何改变， 总的 Cgs 均不改变， 这样稳定了跳变电压 A Vp, 减少了显示画面出现闪烁 （Flicker ) 或者残像发生的几率， 保证了画面品质。
如图 4所示的薄膜晶体管 130'中， 源电极 13Γ形成为与栅线 110垂直， 并且关于栅线 110的中心线为对称。 这样， 进一步保证了 Cg自补偿。
由于图 4所示的薄膜晶体管 130，的源电极 131，与栅线 110垂直， 因此， 薄膜晶体管 130，的漏电极 132，的结构也可被改变， 如图 4所示， 漏电极 132， 也位于栅线 110的中心线的两侧， 较佳地， 漏电极 132'也关于栅线 110的中 心线为对称。
当然， 图 4所示的仅为根据本发明实施例的一种具体薄膜晶体管 130'的 结构， 在其他实施例中， 只要薄膜晶体管的源电极的两端均与亚像素电极连 接， 则该薄膜晶体管就可对栅源寄生电容 Cgs进行自补偿。 例如： 薄膜晶体 管的源电极位于栅线的上方， 源电极与栅线之间存在 60。 的夹角， 并且源电 极的两端分别与亚像素电极连接， 则该薄膜晶体管可对栅源寄生电容 Cgs进 行自补偿。 其他的薄膜晶体管结构就不再类举了。
下面结合说明书附图对本发明实施例作进一步详细描述。
本实施例的 TFT-LCD的亚像素结构为双畴结构。 第一畴液晶电场的方 向与第二畴液晶电场的方向不同， 掩膜工艺包括： 制图， 光刻胶涂覆、 曝光、 显影、 刻蚀等工艺。
参见图 3、 5和 6, 该 TFT-LCD的亚像素结构的制作过程包括： 步骤 501： 在基底基板 100上形成栅线 110。
这里， 釆用掩膜工艺在基板 100上形成栅线 110。 与现有的双畴亚像素 结构不同， 本实施例中栅线 110要形成于两畴条状公共电极的交界处， 即用 于产生第一畴液晶电场方向的条状公共电极 161与用于产生第二畴液晶电场 方向的条状公共电极 162分别位于栅线 110的两侧， 因此， 在掩膜工艺的掩 模板图案设计过程中， 仅需变更用于形成栅线的图案的位置， 使得要形成的 栅线位于要形成的第一畴条状公共电极 161与第二畴条状公共电极 162的交 界处。 然后根据设计的掩模图案， 进行后续的光刻胶涂覆、 曝光、 显影、 刻 蚀等工艺， 从而形成本实施例中的栅线 110。
步骤 502:依次形成栅极绝缘层 102以及有源层 103。有源层 103例如为 包括 a-Si和 n+-Si 的多层膜。
步骤 503:形成数据线 120和薄膜晶体管 130的源电极 131和漏电极 132。 薄膜晶体管 130的源电极 131和漏电极 132在有源层 103上。
这里， 仍旧釆用掩膜工艺， 由于薄膜晶体管位于栅线的上方， 数据线与 漏电极连接， 因此， 在形成图 3所示的像素结构时， 仍旧只需在掩膜工艺的 掩模板图案设计过程中根据所形成的栅线 110的位置设计用于形成数据线以 及薄膜晶体管的源电极、 漏电极以及 TFT沟道的图案的位置， 然后， 根据设 计的图案， 进行后续的光刻胶涂覆、 曝光、 显影、 刻蚀等工艺。
若要形成图 4所示的像素结构， 则需在掩膜工艺中使薄膜晶体管的源电 极的两端分别与亚像素电极连接， 较佳地， 还可使得源电极形成为与栅线垂 直， 且关于栅线的中心线对称。 当然， 漏电极仍与数据线连接， 较佳地， 使 得漏电极也关于栅线的中心线对称。
步骤 504 : 沉积透明导电薄膜， 并且釆用掩膜工艺， 以形成亚像素 ( sub-Pixel ) 电极 140。
亚像素电极 140与漏电极 132相连。
这里， 透明导电薄膜可以使用氧化铟锡 ( ITO )和氧化铟辞 ( IZO )单层 膜， 或上述材料的多层膜。 透明导电薄膜的材质包括： 氧化铟锡（ITO ) , 氧化铟辞（IZO ) 中的一种或两种。
步骤 505: 形成钝化层 104, 以及钝化层上的过孔。
这里， 虽然在亚像素结构中没有过孔， 但在显示屏的周边区域要形成过 孔， 因此在钝化层沉积后， 仍然需要做一次掩膜工艺。
步骤 506: 沉积透明导电薄膜， 并且釆用掩膜工艺， 以形成公共（Vcom ) 电极 160。
此步骤中沉积的透明导电薄膜可与步骤 504中的一致。
这样公共电极 150与亚像素电极 140之间包括钝化层 104。
根据上述 1+4掩膜工艺可以制作出 TFT-LCD亚像素结构。 当然本发明 的实施例不限于此，还可以釆用 1+5掩膜工艺制作出 TFT-LCD亚像素结构。 由于只是栅线的位置发生了改变， 或， 栅线的位置和薄膜晶体管的结构发生 了改变， 因此， 只需要在掩膜工艺中修改掩模板的图案设计， 其他的步骤都 不需要进行改变， 可见， 现有技术中的 TFT-LCD的亚像素结构的形成工艺 都可以用于制作本发明的实施例中的 TFT-LCD的亚像素结构。
上述所有实施例的 TFT-LCD亚像素结构中， 每畴液晶电场的方向由公 共电极决定， 但是本发明的实施例不限于此。
在本发明的另一实施例中，每畴液晶电场的方向还可由亚像素电极决定， 此时， 亚像素电极分两畴， 分别位于栅线的两侧， 即产生第一畴液晶电场的 第一畴亚像素电极， 以及产生第二畴液晶电场的第二畴亚像素电极分别位于 栅线的两侧。 第一畴液晶电场的方向与第二畴液晶电场的方向不同， 即第一 畴亚像素电极的方向与第二畴亚像素电极的方向之间的夹角大于 0。 且小于 180。 。 在此实施例中， 公共电极不分畴， 为一层 ITO电极。 在本实施例中， 两畴亚像素电极仍需 TFT中的源电极连接， 可以只与源电极的一端连接， 较 佳地， 为保证了 Cg 自补偿， 可与源电极的两端分别连接， 即第一畴亚像素 电极与源电极的一端连接，第二畴亚像素电极与源电极的另一端连接。 因此， 该 TFT-LCD的亚像素结构中的其他的结构可与以上参照图 3、 4和 6所描述 的实施例中一样， 不再具体描述。
在上述所有实施例中， TFT-LCD的亚像素结构中， TFT位于栅线的上方， 因此 TFT的源电极以及漏电极都位于栅线的上方，但是本发明的实施例不限 于此。 在本发明的其他实施例中 TFT-LCD的像素结构中的 TFT的源电极以 及漏电极可位于栅线的下方， 或者， TFT的源电极以及漏电极位于栅线的侧 方。 也就是， 在本发明的实施例中的 TFT-LCD的像素结构中， 只要亚像素 电极与公共电极之间产生的第一畴液晶电场， 以及第二畴液晶电场分别位于 栅线的两侧即可， 而 TFT-LCD的像素结构中的栅线、 数据线、 薄膜晶体管 的具体位置关系可以是多样的。
本发明的实施例中， TFT-LCD的亚像素结构中的栅线位于两畴液晶电场 交界处， 即栅线的一侧的有第一畴液晶电场， 栅线的另一侧有第二畴液晶电 场， 第一畴液晶电场的方向与第二畴液晶电场的方向不同， 并且在该交界处 上方有遮光作用的黑矩阵， 这样， 两畴液晶电场的交界处在显示屏上形成的 暗区与栅线在显示屏上形成的暗区重叠， 减少了 TFT-LCD显示屏上的暗区 面积， 提高了双畴结构的透过率， 提高画面质量。
另外， 由于薄膜晶体管发生了改变， 薄膜晶体管的源电极的两端分别与 亚像素电极连接， 这样， 可对栅源寄生电容 Cgs进行自补偿， 即时制作像素 结构的工艺发生偏差时， Cgs数值也不会发生改变， 这样稳定了跳变电压 Δ
Vp, 减少了显示画面出现闪烁 （Flicker )或者残像发生的几率， 保证了画面 口口 臾
应理解， 在本文中， "第一构件位于第三构件的一侧" 是指该第一构件 在基底基板上的垂直投影位于该第三构件在基底基板上的垂直投影的一侧。 类似地， "第一构件和第二构件分别位于第三构件的两侧" 是指该第一构件 和该第二构件在基底基板上的垂直投影分别位于该第三构件在基底基板的垂 直投影的两侧。 本文中的 "第一构件在第二构件上方" 是指该第一构件相对 于该第二构件更加远离基底基板。
本发明的实施例还提供了一种液晶显示器， 其包括上述任一实施例的亚 像素结构。 本发明的实施例的液晶显示器例如用于液晶电视、 手机、 液晶显 示器、 GPS等。 在一些示例例中， 该液晶显示其还包括为阵列基板提供背光 的背光源。
(1 )一种薄膜晶体管液晶显示器的亚像素结构， 包括： 形成在阵列基板 上的栅线， 数据线， 薄膜晶体管， 亚像素电极， 以及公共电极， 其中所述亚 像素电极与所述公共电极之间产生分别位于所述栅线的两侧的第一畴液晶电 场以及第二畴液晶电场，，所述第一畴液晶电场的方向与所述第二畴液晶电场 的方向之间的夹角大于 0° 且小于 180° 。
(2)根据 (1 ) 的亚像素结构， 其中， 所述公共电极包括分别位于所述 栅线的两侧的第一畴公共电极以及第二畴公共电极， 所述第一畴公共电极与 所述亚像素电极之间产生所述第一畴液晶电场， 且所述第二畴公共电极与所 述亚像素电极之间产生所述第二畴液晶电场。
(3)根据 (1 ) 的亚像素结构， 其中， 所述亚像素电极包括分别位于所 述栅线的两侧的第一畴亚像素电极和第二畴亚像素电极， 所述第一畴亚像素 电极与所述公共电极之间产生所述第一畴液晶电场的亚像素电极， 且所述第 二畴亚像素电极与所述公共电极之间产生所述第二畴液晶电场。
(4)根据 (1 ) 的亚像素结构， 其中， 所述薄膜晶体管的源电极的两端 均连接到所述亚像素电极。
(5)根据（4) 的亚像素结构， 其中， 所述薄膜晶体管的源电极与所述 栅线垂直， 且关于所述栅线的中心线对称。
( 6 )根据（ 4 )或（ 5 )所述的亚像素结构， 其中， 所述薄膜晶体管的漏 电极与所述数据线连接， 且所述漏电极关于所述栅线的中心线对称。
(7)根据 (1 ) 的亚像素结构， 其中， 所述第一畴液晶电场以及所述第 二畴液晶电场均位于在所述数据线的同一侧。
(8)根据 (1 ) 的亚像素结构， 其中， 所述亚像素电极与公共电极之间 包括钝化层。
(9)根据 (1 ) 的亚像素结构， 其中， 还包括： 黑矩阵， 所述黑矩阵位 于彩膜基板上与所述栅线对应的位置。
( 10 )一种薄膜晶体管液晶显示器， 包（ 1 )至（ 9 )任一项的像素结构。 虽然上文中已经用一般性说明和具体实施方式对本发明作了详尽的描 述， 但在本发明基础上， 可以对之作一些修改或改进， 这对本领域技术人员 而言是显而易见的。 因此， 在不偏离本发明精神的基础上所做的这些修改或 改进， 均属于本发明要求保护的范围。

Claims

权利要求书
1、一种薄膜晶体管液晶显示器的亚像素结构， 包括： 形成在阵列基板上 的栅线， 数据线， 薄膜晶体管， 亚像素电极， 以及公共电极， 其中，
所述亚像素电极与所述公共电极之间产生分别位于所述栅线的两侧的第 一畴液晶电场以及第二畴液晶电场，，所述第一畴液晶电场的方向与所述第二 畴液晶电场的方向之间的夹角大于 0° 且小于 180° 。
2、如权利要求 1所述的亚像素结构， 其中， 所述公共电极包括分别位于 所述栅线的两侧的第一畴公共电极以及第二畴公共电极， 所述第一畴公共电 极与所述亚像素电极之间产生所述第一畴液晶电场， 且所述第二畴公共电极 与所述亚像素电极之间产生所述第二畴液晶电场。
3、如权利要求 1所述的亚像素结构， 其中， 所述亚像素电极包括分别位 于所述栅线的两侧的第一畴亚像素电极和第二畴亚像素电极， 所述第一畴亚 像素电极与所述公共电极之间产生所述第一畴液晶电场的亚像素电极， 且所 述第二畴亚像素电极与所述公共电极之间产生所述第二畴液晶电场。
4、如权利要求 1所述的亚像素结构， 其中， 所述薄膜晶体管的源电极的 两端均连接到所述亚像素电极。
5、如权利要求 4所述的亚像素结构， 其中， 所述薄膜晶体管的源电极与 所述栅线垂直， 且关于所述栅线的中心线对称。
6、如权利要求 4所述的亚像素结构， 其中， 所述薄膜晶体管的漏电极与 所述数据线连接， 且所述漏电极关于所述栅线的中心线对称。
7、如权利要求 5所述的亚像素结构， 其中， 所述薄膜晶体管的漏电极与 所述数据线连接， 且所述漏电极关于所述栅线的中心线对称。
8、如权利要求 1所述的亚像素结构， 其中， 所述第一畴液晶电场以及所 述第二畴液晶电场均位于在所述数据线的同一侧。
9、如权利要求 1所述的亚像素结构， 其中， 所述亚像素电极与公共电极 之间包括钝化层。
10、 如权利要求 1所述的亚像素结构， 其中， 还包括： 黑矩阵， 所述黑 矩阵位于彩膜基板上与所述栅线对应的位置。
11、 一种薄膜晶体管液晶显示器， 包括权利要求 1所述的像素结构。
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