WO2013067968A1 - Semiconductor photoelectric power conversion system - Google Patents

Semiconductor photoelectric power conversion system Download PDF

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Publication number
WO2013067968A1
WO2013067968A1 PCT/CN2012/084416 CN2012084416W WO2013067968A1 WO 2013067968 A1 WO2013067968 A1 WO 2013067968A1 CN 2012084416 W CN2012084416 W CN 2012084416W WO 2013067968 A1 WO2013067968 A1 WO 2013067968A1
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WO
WIPO (PCT)
Prior art keywords
photoelectric
power conversion
photoelectric power
semiconductor
electro
Prior art date
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PCT/CN2012/084416
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French (fr)
Chinese (zh)
Inventor
郭磊
赵东晶
Original Assignee
Guo Lei
Zhao Dongjing
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Priority claimed from CN2011103560054A external-priority patent/CN102496649A/en
Application filed by Guo Lei, Zhao Dongjing filed Critical Guo Lei
Publication of WO2013067968A1 publication Critical patent/WO2013067968A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to the field of power distribution technology and electronic components, and in particular to a semiconductor photoelectric power conversion system. Background technique
  • AC/AC transformers usually use an electromagnetic field as an energy transmission shield, and the electromagnetic induction principle is used to realize voltage transformation through coupling between different input and output coils; AC/DC converter transformer is performed.
  • the rectifier bridge circuit is realized by a diode;
  • the DC/DC transformer is realized by a converter composed of a power semiconductor device and a driving circuit, an inductor or a capacitor for energy storage;
  • DC/AC converter voltage is passed through the power semiconductor
  • the device is implemented with a driving circuit and a filter circuit.
  • the present invention is directed to solving at least some of the above technical problems or at least providing a useful commercial choice. Accordingly, it is an object of the present invention to provide a semiconductor optoelectronic power conversion system in which the structure of the package, voltage and power can be flexibly expanded.
  • a semiconductor photoelectric power conversion system includes: a substrate; a plurality of photoelectric power conversion modules, wherein the plurality of photoelectric power conversion modules are connected in series and/or in parallel to each other to realize voltage and/or power expansion,
  • the photoelectric power conversion module further includes: an isolation layer, the isolation layer is transparent to the working light of the photoelectric power conversion module; and one or more electro-optical conversion structures formed on the isolation layer are used for Converting input electrical energy into the operational light emission; and forming one or more photoelectric conversion structures on the isolation layer for converting the working light into output electrical energy, wherein the photoelectric conversion structure A spectral match between the absorbed optical term and the electro-optic conversion structure emits a light word.
  • the photoelectric power conversion module is a DC (direct current)-DC type photoelectric power conversion module, an AC (alternating current)-AC type photoelectric power conversion module, an AC-DC type photoelectric power conversion module or a DC. -AC type photoelectric energy conversion module.
  • the electro-optical conversion structure comprises a light emitting diode, a resonant light emitting diode, a laser diode, a quantum dot light emitting device or an organic light emitting device.
  • the photoelectric conversion structure comprises a semiconductor photovoltaic cell, a quantum dot photovoltaic cell or an organic material photovoltaic cell.
  • the isolation layer is an insulating material, and the electro-optic conversion structure and the electro-optic conversion structure are separated by an insulation property of the material itself; or
  • the isolation layer is a semiconductor material, and the electro-optical conversion structure and the isolation layer are separated from the isolation layer by a reverse bias PN junction structure.
  • the photoelectric power conversion module is a flat shape device, and the input end and the output end of the photoelectric power conversion module are diagonally distributed.
  • the semiconductor photoelectric power conversion system further includes: an adjustment module, wherein the adjustment module is connected to a total input end and a total output end of the plurality of photoelectric power conversion modules, and is configured to pass through a monitoring
  • the operating parameters of the total output are feedback, and the operating parameters of the total input are feedback-adjusted.
  • the refractive index of each layer of material on the light propagation path matches.
  • the photoelectric power conversion module further includes an optical trap for limiting light to the inside of the photoelectric power conversion module.
  • the system includes a plurality of photoelectric power conversion modules, each of which can realize DC-DC power conversion by itself, DC-AC, AC-DC or AC-AC power conversion, and is connected by flexible series and parallel connection. Achieve power and / or voltage expansion.
  • the photoelectric power conversion module and the substrate in the system have a flat shape and a large specific surface area, which is advantageous for heat dissipation.
  • the system uses the diagonal electrode distribution package, and the connection between the wires is not beautiful, which is convenient for assembly work, and can reduce the voltage difference between adjacent photoelectric power conversion modules, and increase the electrode The insulation distance between them improves the insulation properties and prevents breakdown.
  • FIG. 1 is a schematic structural view of a semiconductor photoelectric power conversion system of the present invention
  • FIG. 2 is a schematic structural view of another semiconductor photoelectric power conversion system of the present invention.
  • FIG. 3 is a schematic diagram showing the working principle and side view of a DC-DC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention
  • FIG. 4 is a schematic diagram showing the working principle and side view of an AC-AC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention
  • FIG. 5 is a schematic diagram showing the working principle and side view of an AC-DC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention
  • FIG. 6 is a schematic diagram showing the working principle and side view of a DC-AC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention
  • Figure ⁇ is a schematic structural view of a photoelectric power conversion module in a semiconductor photoelectric power conversion system according to an embodiment of the present invention
  • FIG. 8 is a schematic structural view of an optoelectronic power conversion module in a semiconductor photoelectric power conversion system according to another embodiment of the present invention.
  • FIG. 9 is a schematic structural view of an optoelectronic power conversion module in a semiconductor photoelectric power conversion system according to another embodiment of the present invention.
  • FIG. 10 is a schematic structural view of a semiconductor photoelectric power conversion system with an adjustment module of the present invention.
  • FIG 1 is a schematic diagram of the principle of the adjustment module of Figure 10;
  • FIG. 12 is a schematic diagram of the appearance of the photoelectric electrical energy conversion module of the present invention.
  • Figure 13 is a schematic diagram of a series connection of a plurality of photoelectric power conversion modules of the present invention.
  • Figure 14 is a schematic view showing the first series connection and the parallel connection of the plurality of photoelectric power conversion modules of the present invention.
  • Figure 15 is a schematic illustration of the output leads of a plurality of optoelectronic power conversion modules of the present invention. detailed description
  • first,” and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first,”, “second,” may include one or more of the features, either explicitly or implicitly.
  • “multiple,” means two or more, unless specifically defined otherwise.
  • the terms “installation”, “connected”, “connected”, “fixed” and the like are to be understood broadly, and may be either a fixed connection or a detachable connection, unless otherwise explicitly stated and defined. , or connected integrally; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • installation can be understood on a case-by-case basis.
  • the first feature "on” or “under” the second feature may include direct contact of the first and second features, and may include first and second features, unless otherwise explicitly defined and defined. It is not in direct contact but through additional features between them.
  • the first feature "above”, “above” and “above” the second feature includes the first feature directly above and above the second feature, or merely indicating that the first feature level is higher than the second feature.
  • the first feature is below the second feature, ", below,” and “below,” including the first feature being directly above and above the second feature, or merely indicating that the first feature level is less than the second feature.
  • the traditional AC transformer uses the principle of electromagnetic induction.
  • the free electron oscillation in the conductor generates an electromagnetic field as energy transfer.
  • the energy is transmitted through the coupling between the primary and secondary turns, thereby realizing the AC voltage conversion.
  • the semiconductor photoelectric power conversion system of the present invention follows the principle of quantum mechanics, and generates photons through transitions of carriers in different energy levels in semiconductor materials, using photons as energy transmission shields, and then exciting them in another semiconductor material. Carriers are thus implemented to achieve voltage conversion. Therefore, the characteristics of the particle (photon) characteristic instead of the wave (electromagnetic wave) become a basic working principle in the DC transformer of the present invention due to the difference in the transmission energy shield.
  • the invention provides a semiconductor photoelectric power conversion system, comprising: a substrate; a plurality of photoelectric power conversion modules, wherein the plurality of photoelectric power conversion modules are connected in series and/or in parallel to realize voltage and/or power expansion,
  • the photoelectric power conversion module further includes: an isolation layer, the isolation layer is transparent to the working light of the photoelectric power conversion module; and one or more electro-optical conversion structures formed on the isolation layer are used for Converting input electrical energy into the operational light emission; and forming one or more photoelectric conversion structures on the isolation layer for converting the working light into output electrical energy, wherein the photoelectric conversion structure A spectral match between the absorbed optical term and the electro-optic conversion structure emits a light word.
  • the overall energy conversion efficiency of the semiconductor photoelectric power conversion system of the present invention is mainly determined by three factors: electro-optic energy conversion efficiency, photoelectric energy conversion efficiency, and optical energy loss. Due to the development of LED and photovoltaic cell technology, the electro-optical conversion efficiency and photoelectric conversion efficiency of advanced semiconductor devices have reached a very high level, such as AlGalnP material. The internal quantum efficiency of the prepared red LED is close to 100%, the internal quantum efficiency of the blue LED prepared by GaN material has also reached 80%, and the internal quantum efficiency of the II IV photovoltaic cell is also close to 100%, so the optical energy loss is It has become the main factor limiting the energy conversion efficiency of the DC transformer of the present invention.
  • Electro-optical conversion structure emits optical language and photoelectric conversion structure absorption Spectral matching between optical terms to reduce photon non-absorption loss and heat loss, refractive index matching of various materials on the light propagation path to reduce total reflection critical angle loss and Fresnel loss, light trap to reduce light leakage Energy loss.
  • the semiconductor photoelectric power conversion system of the present invention comprises: a substrate 1 and a plurality of photoelectric power conversion modules 2.
  • the substrate 1 is used for supporting and dissipating heat, and the material may be metal, ceramic or plastic, and preferably an aluminum alloy or copper having a small density and good thermal conductivity.
  • a plurality of photoelectric power conversion modules 1 are fixedly arranged on the substrate 1. The output voltage and power of the single photoelectric power conversion module 1 are fixed, and the plurality of photoelectric power conversion modules 1 realize different output inputs through flexible connection. Voltage ratio and power expansion.
  • the semiconductor photoelectric power conversion system of the present invention may also be composed of a plurality of substrates 1 and a plurality of photoelectric power conversion modules 1, and the plurality of substrates are arranged in a stack, which can accommodate more in a limited space.
  • the multi-photoelectric energy conversion module 2 realizes high power output of high voltage or large current.
  • the photoelectric energy conversion module 2 in the semiconductor photoelectric power conversion system of the present invention may have a DC-DC type electric energy conversion module (refer to FIG. 3), an AC-AC type electric energy conversion module (refer to FIG. 4), and an AC-DC type electric energy conversion module. (Refer to FIG. 5) and DC-AC type power conversion module (refer to FIG. 6).
  • the main difference between the four is that the connection between the electro-optical conversion structure and the photoelectric conversion structure is different, and those skilled in the art are actually applying. Flexible settings can be required.
  • the control switching elements K1 and K2 in Fig. 6 can be in various forms, such as a M0S tube, etc., which can be easily integrated on-chip.
  • the working state of the photoelectric conversion module of DC-AC power conversion shown in Fig. 6 is as follows: K1 and K2 are turned on in turn, so that the output turns in a positive half cycle and a negative half cycle, that is, an AC output is generated.
  • K1 and K2 are turned on in turn, so that the output turns in a positive half cycle and a negative half cycle, that is, an AC output is generated.
  • the following is an example of the photoelectric power conversion module of the most practical DC-DC power conversion function, and the basic structure of the photoelectric power conversion module of the invention is described in detail.
  • FIG 3) is a working principle diagram of a DC-DC type photoelectric power conversion module, in which an arrow indicates working light.
  • a DC voltage VI is input to each of the electro-optical conversion structures 21 at the input end to inject carrier-composited photons into the electro-optical conversion structure 21, and the photons are transmitted to the photoelectric conversion structure 22 to be excited in the photoelectric conversion structure 22 to generate different loads.
  • the carriers are separated by a built-in electric field, and a DC voltage V2 is outputted on each of the photoelectric conversion structures 11, thereby realizing energy transmission using the optical waves.
  • the electro-optic conversion structure 21 and the working light of the photoelectric conversion structure 22 should match.
  • the values of VI and V2 depend on the material property parameters of the electro-optical conversion structure 21 and the photoelectric conversion structure 11, such as material type, strain characteristics, forbidden band width, doping concentration, etc., Corresponding characteristic parameters The energy conversion efficiency is optimized.
  • the electro-optical conversion structure may be one, and the photoelectric conversion structure may be multiple; in another embodiment of the present invention, the electro-optic conversion structure may be multiple, and the photoelectric conversion structure may be one; In still another embodiment of the present invention, the electro-optical conversion structure and the semiconductor photoelectric conversion structure may each be plural.
  • Fig. 3(b) is a side view showing the structure of the DC-DC type photoelectric power conversion module, which corresponds to the side view of the photoelectric power conversion module 2 of Fig. 1 taken at A-A'.
  • the photoelectric power conversion module 2 further includes: an isolation layer 23, a plurality of series-connected electro-optic conversion structures 21 formed on the isolation layer 23, and a plurality of layers formed on the isolation layer 23.
  • a series of photoelectric conversion structures 22 are provided. specifically:
  • the electro-optical conversion structure 21 can be a light emitting diode (LED), a resonant light emitting diode (RC-LED) or a laser diode (LD), an organic light emitting device, or a quantum dot light emitting device.
  • LED light emitting diode
  • RC-LED resonant light emitting diode
  • LD laser diode
  • quantum dot light emitting device an organic light emitting device.
  • the electro-optical conversion structure 21 comprises an electro-optical conversion layer, which may be red-yellow AlGalnP, ultraviolet GaN and InGaN, blue-violet InGaN, AlGalnN and ZnO, red or infrared AlGaInAs, GaAS, InGaAs, InGaAsP, AlGaAs, InGaAsNSb and other Group III nitrogen-based compounds, Group III arsenic-based or phosphorus-based compound semiconductor materials, and combinations thereof, organic light-emitting materials or quantum dot luminescent materials.
  • an electro-optical conversion layer which may be red-yellow AlGalnP, ultraviolet GaN and InGaN, blue-violet InGaN, AlGalnN and ZnO, red or infrared AlGaInAs, GaAS, InGaAs, InGaAsP, AlGaAs, InGaAsNSb and other Group III nitrogen-based compounds, Group III
  • the photoelectric conversion structure 22 may be a semiconductor photovoltaic cell, a quantum dot photovoltaic cell, or an organic material photovoltaic cell having a single-sided extraction electrode structure with a back contact or a buried contact.
  • a photovoltaic cell having a single-sided extraction electrode structure with back contact or buried contact can avoid the influence of electrode shading on the light-receiving surface, so that the energy conversion efficiency is higher, and the light-receiving surface is more uniform and beautiful, which can reduce assembly difficulty and increase assembly density.
  • the photoelectric conversion structure 11 includes a photoelectric conversion layer, and the material thereof may be AlGalnP, InGaAs, InGaN, AlGalnN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, InGaAsNSb, other III-V direct ban With semiconductor materials and combinations thereof, organic photovoltaic materials or quantum dot photovoltaic materials.
  • the isolation layer 23 is transparent to the working light emitted by the electro-optical conversion structure 21 for electrical isolation between the electro-optical conversion structure 21 and the photoelectric conversion structure 22.
  • the isolation principle may be isolated by using the insulating properties of the material itself, and may also be isolated by providing a reverse bias PN junction structure between the plurality of electro-optical conversion structures 21 and the plurality of photoelectric conversion structures 22.
  • the isolation layer 23 may be an insulating material such as A 1 2 0 3 , A1N, Si0 2 , MgO, Si 3 N 4 , BN, diamond, LiA10 2 , LiGa0 of a solid transparent insulating shield.
  • CS 2 or SF 6 Gaseous transparent insulation shields
  • the isolation layer 23 may be a semiconductor material, such as GaP, GaAs, InP, GaN, S i, Ge, GaSb, and other semiconductor materials transparent to the working light, by doping, implanting, etc. the isolation layer 23, A PN junction is formed between the plurality of electro-optical conversion structures 21 and the isolation layer 23, and between the plurality of photoelectric conversion structures 22 and 23, and then the PN junction is placed in a reverse bias state to inhibit the occurrence of the on-current, thereby achieving a plurality of Electrical isolation between the electro-optic conversion structure 21 and the plurality of photoelectric conversion structures 22.
  • a semiconductor material such as GaP, GaAs, InP, GaN, S i, Ge, GaSb, and other semiconductor materials transparent to the working light
  • the number of the photoelectric conversion structures 11 is proportional to the number of the electro-optical conversion structures 21 to realize the transformation, and the spectrum of the absorption spectrum of the photoelectric conversion structure 11 and the emission spectrum of the electro-optical conversion structure 21 are matched.
  • the so-called spectrum matching means that the light emitted by the electro-optical conversion structure 21 is matched with the light characteristic of the photoelectric conversion structure 22 to optimize the photoelectric conversion efficiency, so that the electro-optical-photoelectric energy conversion efficiency is high, and the photon energy loss during the conversion process is less. .
  • the emitted light of the electro-optic conversion structure 21 may be a monochromatic light corresponding to the maximum absorption efficiency of the photoelectric conversion structure 22, or may be a photovoltaic effect of other frequencies that enables the photoelectric conversion structure 22 to have a quantum efficiency greater than 1.
  • a specific frequency of light an optimized situation is that the photon energy emitted by the electro-optic conversion layer can ensure that photons can be absorbed by the photoelectric conversion layer, and no excess energy is lost as heat due to excessive photon energy.
  • the electro-optical conversion layer is identical to the forbidden band width of the active material of the photoelectric conversion layer, thereby ensuring light absorption without loss of residual photon energy.
  • the above-mentioned "monochromatic light” has a certain spectral width.
  • a red LED it has a spectral width of about 20 nm, and does not limit a specific frequency point. This is a well-known technique. Let me repeat.
  • FIG. 3 shows a case where a plurality of electro-optic conversion structures 21 and a plurality of photoelectric conversion structures 22 are located on both sides of the isolation layer 23, in other embodiments of the present invention, a plurality of electro-optic lights may be used.
  • the conversion structure 21 and the plurality of photoelectric conversion structures 11 are located on the same side of the isolation layer 23, and a reflective structure is disposed at the bottom of the isolation layer 23 to transmit the emitted light of the plurality of electro-optic conversion structures 21 to the plurality of photoelectric conversion structures 22 through the reflective structure.
  • the refractive indices of the materials of the respective layers on the light propagation path are matched.
  • the refractive indices of the electro-optical conversion structure 21, the isolation layer 23, and the photoelectric conversion structure 11 satisfy the matching conditions.
  • the so-called matching means that the refractive coefficients of the three are similar, or the refractive coefficients of the three layers gradually increase along the direction of propagation of the optical path, which can effectively avoid the phenomenon of total reflection at the interface of each layer during light propagation. A good photoelectric energy conversion efficiency is obtained.
  • the photoelectric power conversion module 2 may further include an optical trap for limiting the working light to the interior of the photoelectric power conversion module 2, in particular, the electro-optic conversion layer and the photoelectric conversion layer for realizing the energy conversion process. In the meantime, it prevents light energy loss caused by light leakage and improves energy conversion efficiency.
  • FIG. 7 is a schematic structural view of an optoelectronic power conversion module 2 in accordance with an embodiment of the present invention.
  • the photoelectric power conversion module 1 includes: a first electrode layer 100; an electro-optical conversion layer 102 formed on the first electrode layer 100; a second electrode layer 104 formed on the electro-optical conversion layer 102; and a second electrode layer formed on the second electrode layer a first isolation layer 106 over 104; a third electrode layer 108 formed over the first isolation layer 106; a photoelectric conversion layer 110 formed over the third electrode layer 108; and formed over the photoelectric conversion layer 110
  • the electro-optic conversion layer 102 is configured to convert the input direct current into light to emit a working light of a desired wavelength range.
  • the working light includes a combination of one or more wavelength bands from the ultraviolet light of 100 nm to the infrared light of 10 paintings, preferably a single frequency of light, such as 620 nm red light, 460 nm blue light, 380 nm purple light,
  • the electro-optical conversion layer is fabricated in a manner that facilitates the use of mature prior art.
  • the electro-optical conversion layer 102 can employ structures and materials having high quantum efficiency and high electro-optical conversion efficiency.
  • the electro-optical conversion layer of the laser structure may be an LED structure or a laser structure, and generally includes an active layer, a limiting layer, a current dispersion layer, a PN junction, etc., wherein the active layer may be a multiple quantum well structure, and the electro-optical conversion layer of the laser structure further includes a resonant cavity.
  • the LED structure includes a resonant LED structure.
  • the material selection of the electro-optic conversion layer 102 is based on the material's own characteristics (such as defect density, band structure, etc.) and the desired light wave characteristics (such as wavelength range), such as red-yellow AlGalnP, ultraviolet GaN and InGaN, blue.
  • the photoelectric conversion layer 110 is used to convert light into electricity to achieve voltage transformation.
  • Materials of the photoelectric conversion layer 110 include AlGalnP, InGaAs, InGaN, AlGalnN, InGaAsP, InGaP, and other Group III-V direct-gap semiconductor materials and combinations thereof.
  • the electro-optical conversion layer 102 is generally selected from a direct band gap semiconductor material, and the band structure is matched with the band structure of the photoelectric conversion layer 110 such that the wavelength band of the working light emitted by the electro-optical conversion layer 102 and the photoelectric conversion layer 110 have the highest absorption efficiency. The bands are matched to achieve the highest lightwave energy conversion efficiency.
  • the first isolation layer 106, the second electrode layer 104 and the third electrode layer 108 are transparent to the working light emitted by the electro-optical conversion layer 102.
  • the forbidden band width of the second electrode layer 104, the first isolation layer 106, and the third electrode layer 108 is greater than the photon energy of the working light emitted by the electro-optical conversion layer 102 to prevent the second electrode layer 104, The absorption of the working light by the isolation 106 layer and the third electrode layer 108 improves the light wave conversion efficiency.
  • the material refractive index of the first isolation layer 106, the second electrode layer 104, and the third electrode layer 108 are matched with the material refractive index of the electro-optical conversion layer 102 and the photoelectric conversion layer 110 to avoid full occurrence at the interface during light propagation. reflection.
  • the second electrode layer 104, the first isolation layer 106, and the third The material refractive index of the electrode layer 108 and the photoelectric conversion layer 110 is the same to avoid full emission at each interface when light is transmitted from the electro-optical conversion layer 102 to the photoelectric conversion layer 110; in a more preferred embodiment of the present invention, the second The material refractive index of the electrode layer 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 is increased stepwise.
  • step increase is that the material refractive index of each of the layers is not less than the material refractive index of the previous layer, that is, the material refractive index of some of the layers may be the same as the previous one. , but the material refractive index of each layer
  • the overall trend is increasing; in a more preferred embodiment of the invention, the material refractive indices of the second electrode layer 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 are gradually increased.
  • the entire light is generated. Reflecting to improve light transmission efficiency; on the other hand, causing light to be transmitted from the photoelectric conversion layer 110 toward the electro-optical conversion layer 102 (mainly including the third and fourth electrodes of the photoelectric conversion layer 110 and the light reflected by the second reflective layer) Full emission occurs to confine more light in the photoelectric conversion layer 110, thereby improving the efficiency of light conversion to electricity.
  • the present invention can also reduce total reflection by roughening or regular patterns such as photonic crystal structures at the interface of different material layers. Therefore, in a preferred embodiment of the present invention, at least one of the electro-optic conversion layer 102, the second electrode layer 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 has a roughened surface or a photonic crystal structure. In order to increase the light transmittance, the total reflection of light is reduced.
  • the first isolation layer 106 is used to realize electrical isolation between the electro-optical conversion layer 102 and the photoelectric conversion layer 110, so that the input voltage and the output voltage do not affect each other, and are transparent to the working light, so that the light carrying the energy can be transmitted from the photoelectric conversion layer 102 to
  • the electro-optic conversion layer 110 realizes energy transfer and finally realizes voltage conversion.
  • the thickness of the first isolation layer 106 depends on the magnitude of the input and output voltage and the insulation requirement. The thicker the first isolation layer, the better the insulation effect, the higher the breakdown voltage that can withstand, but the greater the attenuation of light at the same time, Therefore, the thickness of the insulation layer is determined as follows: The thinner the better the insulation requirements are met.
  • the first spacer layer material 106 is preferably A 1 2 0 3, A1N, Si0 2, MgO, Si 3 N 4, BN, diamond, LiA10 2, LiGa0 2, semi-insulating in the embodiment of the present invention, One of GaAs, SiC or GaP, GaN, and combinations thereof, and rare earth oxide RE0 and combinations thereof.
  • the material of the second electrode layer 104 and the third electrode layer 108 may be heavily doped GaAs, GaN, GaP, AlGaInP, AlGaInN, AlGaInAs, or conductive transparent metal oxide material IT0 (indium tin oxide), Sn0 2 , ZnO And combinations thereof, etc.
  • the first reflective layer 101 is further included between the first electrode layer 100 and the electro-optic conversion layer 102
  • the second reflective layer 111 is further included between the fourth electrode layer 112 and the photoelectric conversion layer 110.
  • the first and second reflective layers confine the light back and forth between the electro-optic conversion layer 102 and the photoelectric conversion layer 110 to prevent light leakage and improve energy conversion efficiency of the light.
  • the material of the reflective layer needs to meet the requirements of high reflection efficiency of working light, stable material performance, low interface contact resistance, and good electrical conductivity.
  • One is a Bragg mirror structure, which realizes reflection by using a plurality of material layers having different refractive indices, for example, two materials having different refractive indexes (for example, GaAs and AlAs having a refractive index difference of 0.6) , Si with a refractive index difference of 2.2 and rare earth oxide RE0) are made into a multilayer structure to achieve reflection;
  • one is a metal total mirror structure, which can directly deposit a metal with high conductivity and thermal conductivity to achieve reflection, such as Ag, Au , Cu, Ni, Al, Sn, Co, W, combinations thereof, and the like.
  • the reflective layer Since the thickness of the back electrode layer (ie, the first electrode layer 100 and the fourth electrode layer 112) in contact with the reflective layer is thick, the reflective layer has a metal total reflection mirror structure and has a heat dissipation function, and the transformer interior can be The heat generated is conducted out.
  • the first electrode layer 100 and the fourth electrode layer 112 are used as the extraction electrodes for input and output currents. Since they are not required to be transparent to the working light, they can be formed by using metals, alloys, ceramics, glass, plastics, conductive oxides and the like. A single layer and/or a multilayer composite structure, of which a low resistivity metal such as Cu is preferred. Preferably, by adding metal electricity The thickness of the pole layer reduces the resistance and acts as a heat sink to dissipate heat.
  • the input threshold voltage and the output voltage of the photoelectric power conversion module 2 are determined by the material characteristic parameters of the photoelectric conversion layer and the electro-optical conversion layer, such as the forbidden band width, the doping concentration, etc., the corresponding characteristic parameters are adjusted. To achieve transformation. Further, the expected voltage transformation can be realized by adjusting the ratio of the number of the electro-optical conversion layer 102 and the photoelectric conversion layer 110 according to actual needs, for example, as shown in FIG. 8, the photoelectric power conversion module 2 includes an electro-optical conversion. The layer 102 and the two photoelectric conversion layers 110A and 110B increase the transformation of the vertical structure with respect to the photoelectric power conversion module 2 including the same single electro-optical conversion layer and a single photoelectric conversion layer, so that the transformation ratio is larger.
  • the first electrode layer 100, the electro-optical conversion layer 102 formed over the first electrode layer 100, and the second electrode layer 104 formed over the electro-optical conversion layer 102 are used as one The electro-optic conversion structure; similarly, the third electrode layer 108, the photoelectric conversion layer 110 formed over the third electrode layer 108, and the fourth electrode layer 12 formed over the photoelectric conversion layer 110 as a photoelectric conversion structure .
  • the semiconductor DC photoelectric transformer may further include a plurality of layers of alternately stacked electro-optical conversion structures and photoelectric conversion structures in a vertical direction. An isolation layer is included between each adjacent electro-optical conversion structure and the photoelectric conversion structure to further increase the DC voltage transformation ratio.
  • the plurality of electro-optic conversion structures are connected in series with each other, and the structure of each of the electro-optic conversion structures (or each of the photoelectric conversion structures) may refer to the structures described in the above embodiments.
  • 9 is a schematic structural view of a semiconductor DC photoelectric transformer having two electro-optic conversion structures and one photoelectric conversion structure in a vertical direction, wherein the electro-optical conversion structure and the photoelectric conversion structure respectively include a first isolation layer 106 and a second isolation Layer 107.
  • the first electrode layer and the fourth electrode layer of each of the electro-optical conversion structures and the photoelectric conversion structure may not be selected from metal electrodes.
  • the same heavily doped semiconductor material GaAs, GaN, GaP, A lGa InP, A lGa I nN, A lGa lnAs , or conductive transparent metal oxide material I T0 , Sn0 2 is selected as the second and third electrode layers. ZnO, and combinations thereof, to facilitate light propagation.
  • the invention provides an optoelectronic power conversion module 2, which is provided with an electro-optical conversion layer at an input end of the photoelectric power conversion module 1, and converts direct current into light by using optical radiation generated by transitions between semiconductor electronic energy levels, and is set at the output end.
  • the photoelectric conversion layer converts light into electric energy output. Since the voltage of the input unit and the output unit unit depends on the characteristic parameters and the number of the electro-optical conversion layer and the photoelectric conversion layer material, the transformer can directly realize the DC voltage transformation.
  • the semiconductor photoelectric power conversion system further includes an adjustment module 3, which may be fixed on the substrate 1 or independently.
  • the adjustment module 3 is connected to the total input terminal (in) and the total output terminal (out) of the plurality of photoelectric power conversion modules 2, for monitoring the operating parameters of the total output terminal by feedback, and adjusting the operating parameters of the total input terminal to maintain the semiconductor photoelectric energy
  • the conversion system is regulated or regulated, or the photovoltaic power conversion module 1 is operated at an optimum state or at a specific operating point.
  • Figure 11 is a diagram showing the operation of the semiconductor photoelectric power conversion system shown in Figure 10. As shown in FIG.
  • the adjustment module 3 first detects the current and voltage values of the plurality of photoelectric conversion structures 22 at the output end, and then the micro-processing chip in the adjustment module 3 performs a calculation process on the detection value to obtain a corresponding instruction, and the control component inputs the input according to the instruction.
  • a plurality of electro-optical conversion structures 21 at the ends are regulated.
  • the adjustment component can be a power MOSFET, a JFET, a thyristor, a BJT, a variable resistor, or the like.
  • the optoelectronic power conversion module 2 is a flat type device, and its input end and output end are diagonally distributed. Specifically, as shown in FIG.
  • the photoelectric power conversion module 2 can be a flat rectangular sheet shape, and the input positive pole and the input negative pole are located on a diagonal line L 1 of the main body, and the output positive pole and the output negative pole are located in the main body.
  • the other diagonal is on L2.
  • the input positive and negative electrodes and the output positive and negative electrodes may also be disposed at positions close to the top surface and the bottom surface, respectively.
  • the photoelectric power conversion module 2 may also be a flat circular sheet shape, a flat rounded rectangular sheet shape, or the like.
  • Figure 12 (b) is a top plan view of the photoelectric power conversion module 2 shown in Figure 12 (a);
  • Figure 12 (c) is a bottom view of the photoelectric power conversion module 2 shown in Figure 12 (a).
  • the design of the flat type device increases the transmission area of the working light on the one hand, and facilitates the heat dissipation of the integrated semiconductor photoelectric power conversion system on the other hand; the leads of the input end and the output end are diagonally distributed. , it is beneficial to the straight connection between the modules, the wiring is clear, the inductance generated by the line is less disturbed, and the insulation distance between the electrodes inside the module is long, and the insulation characteristics are better.
  • a plurality of photoelectric power conversion modules 2 may be sequentially connected in series as shown in Fig. 13.
  • a plurality of photoelectric power conversion modules 2 are alternately arranged face up and back up, and can be sequentially connected by short, non-intersecting leads to reduce wire consumption and reduce electromagnetic interference.
  • a plurality of photoelectric power conversion modules 2 are connected in series, and then thousands of series branches are connected in parallel.
  • the backflow prevention element D can also be connected in series on each of the series branches.
  • the anti-backflow component D when a series branch circuit fails, it can be regarded as a load because it has a certain resistance value.
  • the other series branch can be used as a power source, and the load can be loaded on the "load," Normal voltage output.
  • a semiconductor opto-electrical energy conversion system can form an isolated power supply or a non-isolated power supply by applying a common or non-common to the input and output terminals.
  • the isolated power supply is difficult to implement; and the semiconductor photoelectric power conversion system of the present invention is easy to implement due to its own characteristics.
  • the semiconductor photoelectric power conversion system is provided with a plurality of output terminal leads between the plurality of photoelectric power conversion modules 2, and outputs different output voltages, which are suitable for different types at the same time. The situation in which the operating voltage of the device is powered.
  • the system includes a plurality of photoelectric power conversion modules, each of which can realize DC-DC power conversion by itself, DC-AC, AC-DC or AC-AC power conversion, and is connected by flexible series and parallel connection. Achieve power and / or voltage expansion.
  • the photoelectric power conversion module and the substrate in the system have a flat shape and a large specific surface area, which is advantageous for heat dissipation.
  • the system uses the diagonal electrode distribution package, and the connection between the wires is not beautiful, which is convenient for assembly work, and can reduce the voltage difference between adjacent photoelectric power conversion modules, and increase the electrode Insulation distance between High insulation properties, which can effectively prevent breakdown.
  • the description of the terms “one embodiment”, “some embodiments”, “example”, “specific example”, or “some examples” and the like means a specific feature described in connection with the embodiment or example.
  • a structure, material or feature is included in at least one embodiment or example of the invention.
  • the schematic representation of the above terms does not necessarily mean the same embodiment or example.
  • the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.

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Abstract

Provided in the present invention is a semiconductor photoelectric power conversion system comprising: a substrate and multiple photoelectric power converter modules. The multiple photoelectric power converter modules are serial-connected and/or parallel-connected therebetween to implement expansion of voltage and/or power. The photoelectric power converter module further comprises: an isolation layer, which is transparent for a working light of the photoelectric power converter module, one or multiple electric-photo conversion structures formed on the isolation layer, used for converting an electric energy input into the working light for emission, and one or multiple photoelectric conversion structures formed on the isolation layer, used for converting the working light into a power output, where the absorption spectrum of the photoelectric conversion structures and the emission spectrum of the electric-photo conversion structures are spectrally matched therebetween. The system has the advantages of a simple structure, and flexible expandability of voltage and power.

Description

一种半导体光电电能转换系统  Semiconductor photoelectric energy conversion system
技术领域 Technical field
本发明涉及变电配电技术及电子元器件领域， 特别涉及一种半导体光电电能转换系统。 背景技术  The invention relates to the field of power distribution technology and electronic components, and in particular to a semiconductor photoelectric power conversion system. Background technique
在电力与电子系统中， 电能转换依靠变流与变压来实现， 该过程是常见且重要的环 节， 其中交流 /交流变压、 交流 /直流变流变压、 直流 /交流变流变压、 直流 /直流变压都 有很广泛的应用。  In power and electronic systems, power conversion is achieved by variable current and variable voltage. This process is a common and important part, among which AC/AC transformer, AC/DC converter transformer, DC/AC converter transformer, DC/DC transformers have a wide range of applications.
现有技术中， 交流 /交流变压通常釆用电磁场作为能量传输介盾， 利用电磁感应原 理通过不同匝数的输入输出线圏之间的耦合实现变压； 交流 /直流变流变压则釆用二极 管构成的整流桥电路来实现； 直流 /直流变压通过功率半导体器件与驱动电路、 储能用 的电感或电容等器件构成的变换器来实现； 直流 /交流变流变压则通过功率半导体器件 与驱动电路、 滤波电路来实现。 以上方案中， 均存在以下缺点： 所需的装置复杂， 元件 众多， 体积较大， 相位难同步， 有电磁辐射， 有一定能量损失， 不能耐高压、 稳定性较差 等。 为此， 开发一种能够电能转换的器件和系统， 以及相对应的封装形式具有非常重要 的价值。 发明内容  In the prior art, AC/AC transformers usually use an electromagnetic field as an energy transmission shield, and the electromagnetic induction principle is used to realize voltage transformation through coupling between different input and output coils; AC/DC converter transformer is performed. The rectifier bridge circuit is realized by a diode; the DC/DC transformer is realized by a converter composed of a power semiconductor device and a driving circuit, an inductor or a capacitor for energy storage; DC/AC converter voltage is passed through the power semiconductor The device is implemented with a driving circuit and a filter circuit. In the above schemes, the following shortcomings exist: The required equipment is complicated, the components are numerous, the volume is large, the phase is difficult to synchronize, there is electromagnetic radiation, there is a certain energy loss, and it cannot withstand high pressure and has poor stability. To this end, the development of a device and system capable of electrical energy conversion, and the corresponding package form, is of great value. Summary of the invention
本发明旨在至少在一定程度上解决上述技术问题之一或至少提供一种有用的商业选择。 为此， 本发明的一个目的在于提出一种结构筒单、 电压和功率可灵活扩展的半导体光电电能 转换系统。  The present invention is directed to solving at least some of the above technical problems or at least providing a useful commercial choice. Accordingly, it is an object of the present invention to provide a semiconductor optoelectronic power conversion system in which the structure of the package, voltage and power can be flexibly expanded.
根据本发明实施例的半导体光电电能转换系统， 包括： 基板； 多个光电电能转换模块， 所述多个光电电能转换模块之间相互串联和 /或并联， 以实现电压和 /或功率的扩展， 其中， 所述光电电能转换模块进一步包括： 隔离层， 所述隔离层对所述光电电能转换模块的工作光 线透明； 形成在所述隔离层之上的一个或多个的电光转换结构， 用于将输入电能转换为所述 工作光线发射； 和形成在所述隔离层之上的一个或多个的光电转换结构， 用于将所述工作光 线转换为输出电能， 其中， 所述光电转换结构的吸收光语与所述电光转换结构发射光语之间 频谱匹配。  A semiconductor photoelectric power conversion system according to an embodiment of the present invention includes: a substrate; a plurality of photoelectric power conversion modules, wherein the plurality of photoelectric power conversion modules are connected in series and/or in parallel to each other to realize voltage and/or power expansion, The photoelectric power conversion module further includes: an isolation layer, the isolation layer is transparent to the working light of the photoelectric power conversion module; and one or more electro-optical conversion structures formed on the isolation layer are used for Converting input electrical energy into the operational light emission; and forming one or more photoelectric conversion structures on the isolation layer for converting the working light into output electrical energy, wherein the photoelectric conversion structure A spectral match between the absorbed optical term and the electro-optic conversion structure emits a light word.
在本发明的一个实施例中， 所述光电电能转换模块为 DC (直流） -DC型光电电能转换模 块、 AC (交流） -AC型光电电能转换模块、 AC-DC型光电电能转换模块或 DC-AC型光电电能 转换模块。 在本发明的一个实施例中， 所述光电电能转换模块中， 所述电光转换结构包括发光二极 管、 谐振发光二极管、 激光二极管、 量子点发光器件或有机发光器件。 In an embodiment of the invention, the photoelectric power conversion module is a DC (direct current)-DC type photoelectric power conversion module, an AC (alternating current)-AC type photoelectric power conversion module, an AC-DC type photoelectric power conversion module or a DC. -AC type photoelectric energy conversion module. In an embodiment of the invention, in the photoelectric power conversion module, the electro-optical conversion structure comprises a light emitting diode, a resonant light emitting diode, a laser diode, a quantum dot light emitting device or an organic light emitting device.
在本发明的一个实施例中， 所述光电电能转换模块中， 所述光电转换结构包括半导体光 伏电池、 量子点光伏电池或有机材料光伏电池。  In an embodiment of the invention, in the photoelectric power conversion module, the photoelectric conversion structure comprises a semiconductor photovoltaic cell, a quantum dot photovoltaic cell or an organic material photovoltaic cell.
在本发明的一个实施例中， 所述光电电能转换模块中， 所述隔离层为绝缘材料， 所述电 光转换结构、 所述电光转换结构之间通过材料本身的绝缘特性进行隔离； 或者， 所述隔离层 为半导体材料， 所述电光转换结构与所述隔离层之间、 所述光电转换结构与所述隔离层之间 通过反偏 PN结结构进行隔离。  In an embodiment of the present invention, in the photoelectric power conversion module, the isolation layer is an insulating material, and the electro-optic conversion structure and the electro-optic conversion structure are separated by an insulation property of the material itself; or The isolation layer is a semiconductor material, and the electro-optical conversion structure and the isolation layer are separated from the isolation layer by a reverse bias PN junction structure.
在本发明的一个实施例中， 所述光电电能转换模块为扁平形状器件， 并且所述光电电能 转换模块的输入端和输出端呈对角线交叉分布。  In an embodiment of the invention, the photoelectric power conversion module is a flat shape device, and the input end and the output end of the photoelectric power conversion module are diagonally distributed.
在本发明的一个实施例中， 所述半导体光电电能转换系统还包括： 调节模块， 所述调节 模块与所述多个光电电能转换模块的总输入端和总输出端相连，用于通过监测所述总输出端 的工作参数 , 反馈调节所述总输入端的工作参数。  In an embodiment of the present invention, the semiconductor photoelectric power conversion system further includes: an adjustment module, wherein the adjustment module is connected to a total input end and a total output end of the plurality of photoelectric power conversion modules, and is configured to pass through a monitoring The operating parameters of the total output are feedback, and the operating parameters of the total input are feedback-adjusted.
在本发明的一个实施例中， 所述光电电能转换模块中， 光线传播路径上的各层材料的折 射系数匹配。  In an embodiment of the invention, in the photoelectric power conversion module, the refractive index of each layer of material on the light propagation path matches.
在本发明的一个实施例中， 所述光电电能转换模块中， 还包括光学陷阱， 所述光学陷 阱用于将光线限制在所述光电电能转换模块内部。  In an embodiment of the invention, the photoelectric power conversion module further includes an optical trap for limiting light to the inside of the photoelectric power conversion module.
才艮据本发明实施例的半导体光电电能转换系统至少具有如下优点：  The semiconductor photoelectric power conversion system according to the embodiment of the present invention has at least the following advantages:
( 1 )该系统包括多个光电电能转换模块， 每个模块不仅可以自身实现 DC-DC电能转换， 还可以实现 DC-AC、 AC-DC或 AC-AC电能转换， 并通过灵活串并联连接以实现功率和 /或电压 扩展。  (1) The system includes a plurality of photoelectric power conversion modules, each of which can realize DC-DC power conversion by itself, DC-AC, AC-DC or AC-AC power conversion, and is connected by flexible series and parallel connection. Achieve power and / or voltage expansion.
( 2 )该系统中的光电电能转换模块和基板都为扁平形状， 比表面积大， 利于散热。 (2) The photoelectric power conversion module and the substrate in the system have a flat shape and a large specific surface area, which is advantageous for heat dissipation.
( 3 )该系统釆用对角线电极分布封装， 连线之间筒洁美观不交叉， 为组装工作带来便 利， 同时可以降低相邻光电电能转换模块之间的电压差， 增大电极之间的绝缘距离， 从而提 高绝缘特性， 能有效防止击穿。 (3) The system uses the diagonal electrode distribution package, and the connection between the wires is not beautiful, which is convenient for assembly work, and can reduce the voltage difference between adjacent photoelectric power conversion modules, and increase the electrode The insulation distance between them improves the insulation properties and prevents breakdown.
( 4 )该系统的输入电路提供一个固定的输入电压后， 在输出电路上可设多个抽头， 同 时输出不同的电压， 满足不同使用需求。  (4) After the input circuit of the system provides a fixed input voltage, multiple taps can be set on the output circuit, and different voltages can be output at the same time to meet different usage requirements.
本发明的附加方面和优点将在下面的描述中部分给出， 部分将从下面的描述中变得明 显， 或通过本发明的实践了解到。 附图说明  The additional aspects and advantages of the invention will be set forth in part in the description which follows. DRAWINGS
本发明的上述和 /或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和 容易理解， 其中： The above and/or additional aspects and advantages of the present invention will become apparent from the following description of the embodiments in conjunction with the accompanying drawings Easy to understand, where:
图 1是本发明的半导体光电电能转换系统的结构示意图；  1 is a schematic structural view of a semiconductor photoelectric power conversion system of the present invention;
图 2是本发明另一个半导体光电电能转换系统的结构示意图；  2 is a schematic structural view of another semiconductor photoelectric power conversion system of the present invention;
图 3是本发明的半导体光电电能转换系统中的 DC-DC型光电电能转换模块的工作原理图 和侧视结构示意图；  3 is a schematic diagram showing the working principle and side view of a DC-DC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention;
图 4是本发明的半导体光电电能转换系统中的 AC-AC型光电电能转换模块的工作原理图 和侧视结构示意图；  4 is a schematic diagram showing the working principle and side view of an AC-AC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention;
图 5是本发明的半导体光电电能转换系统中的 AC-DC型光电电能转换模块的工作原理图 和侧视结构示意图；  5 is a schematic diagram showing the working principle and side view of an AC-DC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention;
图 6是本发明的半导体光电电能转换系统中的 DC-AC型光电电能转换模块的工作原理图 和侧视结构示意图；  6 is a schematic diagram showing the working principle and side view of a DC-AC type photoelectric power conversion module in the semiconductor photoelectric power conversion system of the present invention;
图 Ί是本发明的一个实施例的半导体光电电能转换系统中的光电电能转换模块的结构示 意图；  Figure Ί is a schematic structural view of a photoelectric power conversion module in a semiconductor photoelectric power conversion system according to an embodiment of the present invention;
图 8是本发明的另一个实施例的半导体光电电能转换系统中的光电电能转换模块的结构 示意图；  8 is a schematic structural view of an optoelectronic power conversion module in a semiconductor photoelectric power conversion system according to another embodiment of the present invention;
图 9是本发明的另一个实施例的半导体光电电能转换系统中的光电电能转换模块的结构 示意图；  9 is a schematic structural view of an optoelectronic power conversion module in a semiconductor photoelectric power conversion system according to another embodiment of the present invention;
图 1 0是本发明的具有调节模块的半导体光电电能转换系统的结构示意图；  10 is a schematic structural view of a semiconductor photoelectric power conversion system with an adjustment module of the present invention;
图 1 1是图 1 0的调节模块的原理示意图；  Figure 1 is a schematic diagram of the principle of the adjustment module of Figure 10;
图 12是本发明的光电电能转换模块的外观示意图；  12 is a schematic diagram of the appearance of the photoelectric electrical energy conversion module of the present invention;
图 1 3是本发明的多个光电电能转换模块的串联连接的示意图；  Figure 13 is a schematic diagram of a series connection of a plurality of photoelectric power conversion modules of the present invention;
图 14是本发明的多个光电电能转换模块的先串联后并联连接的示意图； 和  Figure 14 is a schematic view showing the first series connection and the parallel connection of the plurality of photoelectric power conversion modules of the present invention;
图 1 5是本发明的多个光电电能转换模块的输出引线的示意图。 具体实施方式  Figure 15 is a schematic illustration of the output leads of a plurality of optoelectronic power conversion modules of the present invention. detailed description
下面详细描述本发明的实施例， 所述实施例的示例在附图中示出， 其中自始至终相同或 类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的 实施例是示例性的， 旨在用于解释本发明， 而不能理解为对本发明的限制。  The embodiments of the present invention are described in detail below, and the examples of the embodiments are illustrated in the drawings, wherein the same or similar reference numerals are used to refer to the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the drawings are intended to be illustrative of the invention and are not to be construed as limiting.
在本发明的描述中， 需要理解的是， 术语 "中心"、 "纵向"、 "横向"、 "长度"、 "宽度，，、 "厚度，，、 "上，，、 "下，，、 "前，，、 "后，，、 "左，，、 "右，，、 "竖直"、 "水平"、 "顶，，、 "底" "内，，、 "外，，、 "顺时针"、 "逆时针" 等指示的方位或位置关系为基于附图所示的方位或位置关系， 仅是为 了便于描述本发明和筒化描述， 而不是指示或暗示所指的装置或元件必须具有特定的方位、 以特定的方位构造和操作， 因此不能理解为对本发明的限制。 In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", ",", ", ", ", ", " Front,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The orientation or positional relationship of the "counterclockwise" or the like is based on the orientation or positional relationship shown in the drawings, and is merely for the convenience of describing the present invention and the description of the cartridge, and does not indicate or imply that the device or component referred to must have a specific Orientation, The construction and operation in a particular orientation are not to be construed as limiting the invention.
此外， 术语 "第一，，、 "第二，， 仅用于描述目的， 而不能理解为指示或暗示相对重要性或 者隐含指明所指示的技术特征的数量。 由此， 限定有 "第一，，、 "第二，， 的特征可以明示或者 隐含地包括一个或者更多个该特征。 在本发明的描述中， "多个，， 的含义是两个或两个以上， 除非另有明确具体的限定。  Moreover, the terms "first," and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first,", "second," may include one or more of the features, either explicitly or implicitly. In the description of the present invention, "multiple," means two or more, unless specifically defined otherwise.
在本发明中， 除非另有明确的规定和限定， 术语 "安装"、 "相连"、 "连接"、 "固定" 等 术语应做广义理解， 例如， 可以是固定连接， 也可以是可拆卸连接， 或一体地连接； 可以是 机械连接， 也可以是电连接； 可以是直接相连， 也可以通过中间媒介间接相连， 可以是两个 元件内部的连通。对于本领域的普通技术人员而言， 可以根据具体情况理解上述术语在本发 明中的具体含义。  In the present invention, the terms "installation", "connected", "connected", "fixed" and the like are to be understood broadly, and may be either a fixed connection or a detachable connection, unless otherwise explicitly stated and defined. , or connected integrally; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood on a case-by-case basis.
在本发明中， 除非另有明确的规定和限定， 第一特征在第二特征之 "上" 或之 "下" 可 以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之 间的另外的特征接触。 而且， 第一特征在第二特征 "之上"、 "上方" 和 "上面" 包括第一特 征在第二特征正上方和斜上方， 或仅仅表示第一特征水平高度高于第二特征。 第一特征在第 二特征 "之下，，、 "下方，， 和 "下面，， 包括第一特征在第二特征正上方和斜上方， 或仅仅表示 第一特征水平高度小于第二特征。  In the present invention, the first feature "on" or "under" the second feature may include direct contact of the first and second features, and may include first and second features, unless otherwise explicitly defined and defined. It is not in direct contact but through additional features between them. Moreover, the first feature "above", "above" and "above" the second feature includes the first feature directly above and above the second feature, or merely indicating that the first feature level is higher than the second feature. The first feature is below the second feature, ", below," and "below," including the first feature being directly above and above the second feature, or merely indicating that the first feature level is less than the second feature.
为使本领域技术人员更好地理解本发明，先对现有技术与本发明的原理进行阐述和对比。 从物理原理上说， 传统的交流变压器利用的是电磁感应原理， 导体中的自由电子震荡产生电 磁场作为能量传递的， 通过主次线圏之间的耦合传递能量， 从而实现交流电压变换。 本发明 中的半导体光电电能转换系统遵循的是量子力学原理，通过半导体材料中载流子在不同能级 间的跃迁产生光子，利用光子作为能量传递介盾，再在另外的半导体材料中激发产生载流子， 从而实现电压变换。 因此， 由于传递能量介盾的不同， 粒子 （光子）特性取代波（电磁波） 的特性在本发明的直流变压器中成为基本的工作原理。  To make the present invention better understood by those skilled in the art, the prior art and the principles of the present invention are set forth and compared. Physically speaking, the traditional AC transformer uses the principle of electromagnetic induction. The free electron oscillation in the conductor generates an electromagnetic field as energy transfer. The energy is transmitted through the coupling between the primary and secondary turns, thereby realizing the AC voltage conversion. The semiconductor photoelectric power conversion system of the present invention follows the principle of quantum mechanics, and generates photons through transitions of carriers in different energy levels in semiconductor materials, using photons as energy transmission shields, and then exciting them in another semiconductor material. Carriers are thus implemented to achieve voltage conversion. Therefore, the characteristics of the particle (photon) characteristic instead of the wave (electromagnetic wave) become a basic working principle in the DC transformer of the present invention due to the difference in the transmission energy shield.
本发明提出了一种半导体光电电能转换系统， 包括： 基板； 多个光电电能转换模块， 所 述多个光电电能转换模块之间相互串联和 /或并联， 以实现电压和 /或功率的扩展， 其中， 所 述光电电能转换模块进一步包括： 隔离层， 所述隔离层对所述光电电能转换模块的工作光线 透明； 形成在所述隔离层之上的一个或多个的电光转换结构， 用于将输入电能转换为所述工 作光线发射； 和形成在所述隔离层之上的一个或多个的光电转换结构， 用于将所述工作光线 转换为输出电能， 其中， 所述光电转换结构的吸收光语与所述电光转换结构发射光语之间频 谱匹配。  The invention provides a semiconductor photoelectric power conversion system, comprising: a substrate; a plurality of photoelectric power conversion modules, wherein the plurality of photoelectric power conversion modules are connected in series and/or in parallel to realize voltage and/or power expansion, The photoelectric power conversion module further includes: an isolation layer, the isolation layer is transparent to the working light of the photoelectric power conversion module; and one or more electro-optical conversion structures formed on the isolation layer are used for Converting input electrical energy into the operational light emission; and forming one or more photoelectric conversion structures on the isolation layer for converting the working light into output electrical energy, wherein the photoelectric conversion structure A spectral match between the absorbed optical term and the electro-optic conversion structure emits a light word.
本发明中的半导体光电电能转换系统的总体能量转换效率主要由三个因素决定： 电光能 量转换效率， 光电能量转换效率， 光能量损失。 由于 LED和光伏电池技术的发展， 现在先进 的半导体器件的电光转换效率和光电转换效率已经达到了很高的水平，例如 AlGalnP材料制 备的红光 LED的内量子效率已经接近 100%, GaN材料制备的蓝光 LED 内量子效率也已达到 80%, 而 I I I-V族光伏电池的内量子效率也已接近 100%, 因此光能量损失就成为了限制本发 明直流变压器能量转换效率的主要因素，因此本发明中提出了三种技术来尽量减小光能量损 失， 提高能量转换效率， 分别是： 电光转换结构发射光语与光电转换结构吸收光语之间的频 谱匹配以减少光子的非吸收损失和热损失，光线传播路径上的各个材料的折射系数匹配以减 少全反射临界角损失和菲涅耳损失， 光陷阱以减少光线泄露引起的能量损失。 这些在下文中 有具体的说明。 The overall energy conversion efficiency of the semiconductor photoelectric power conversion system of the present invention is mainly determined by three factors: electro-optic energy conversion efficiency, photoelectric energy conversion efficiency, and optical energy loss. Due to the development of LED and photovoltaic cell technology, the electro-optical conversion efficiency and photoelectric conversion efficiency of advanced semiconductor devices have reached a very high level, such as AlGalnP material. The internal quantum efficiency of the prepared red LED is close to 100%, the internal quantum efficiency of the blue LED prepared by GaN material has also reached 80%, and the internal quantum efficiency of the II IV photovoltaic cell is also close to 100%, so the optical energy loss is It has become the main factor limiting the energy conversion efficiency of the DC transformer of the present invention. Therefore, three techniques are proposed in the present invention to minimize the optical energy loss and improve the energy conversion efficiency, respectively: Electro-optical conversion structure emits optical language and photoelectric conversion structure absorption Spectral matching between optical terms to reduce photon non-absorption loss and heat loss, refractive index matching of various materials on the light propagation path to reduce total reflection critical angle loss and Fresnel loss, light trap to reduce light leakage Energy loss. These are specifically described below.
下面结合附图对本发明的实施例的半导体光电电能转换系统做进一步阐释。  The semiconductor photoelectric power conversion system of the embodiment of the present invention will be further explained below with reference to the accompanying drawings.
如图 1所示， 本发明的半导体光电电能转换系统包括： 基板 1和多个光电电能转换模块 2。 其中， 基板 1用于支撑和散热， 材料可为金属， 陶瓷或者塑料， 优选密度小、 热导率好 的铝合金或铜。 多个光电电能转换模块 1整齐排布地固定在基板 1上，单个光电电能转换模 块 1的输出输入电压与功率是固定的，多个光电电能转换模块 1之间通过灵活连接方式实现 不同的输出输入电压比与功率扩展。  As shown in FIG. 1, the semiconductor photoelectric power conversion system of the present invention comprises: a substrate 1 and a plurality of photoelectric power conversion modules 2. The substrate 1 is used for supporting and dissipating heat, and the material may be metal, ceramic or plastic, and preferably an aluminum alloy or copper having a small density and good thermal conductivity. A plurality of photoelectric power conversion modules 1 are fixedly arranged on the substrate 1. The output voltage and power of the single photoelectric power conversion module 1 are fixed, and the plurality of photoelectric power conversion modules 1 realize different output inputs through flexible connection. Voltage ratio and power expansion.
优选地， 如图 2所示， 本发明的半导体光电电能转换系统可也以由多个基板 1和多个光 电电能转换模块 1组成， 多个基板排列成堆叠状， 可以使有限空间中容纳更多光电电能转换 模块 2 , 实现高电压或者大电流的高功率输出。  Preferably, as shown in FIG. 2, the semiconductor photoelectric power conversion system of the present invention may also be composed of a plurality of substrates 1 and a plurality of photoelectric power conversion modules 1, and the plurality of substrates are arranged in a stack, which can accommodate more in a limited space. The multi-photoelectric energy conversion module 2 realizes high power output of high voltage or large current.
本发明的半导体光电电能转换系统中的光电电能转换模块 2可以有 DC-DC型电能转换模 块（参考图 3 )、 AC-AC型电能转换模块（参考图 4 )、 AC-DC型电能转换模块（参考图 5 ) 以 及 DC-AC型电能转换模块（参考图 6 ) 四种， 四者的主要区别在于其中的电光转换结构和光 电转换结构之间的连接方式不同， 本领域技术人员在实际应用中可以需求灵活设置。 需要说 明的是， 图 6中的控制开关元件 K1和 K2可以有多种形式， 例如 M0S管等等， 可以很方便地 片上集成。 图 6所示的 DC-AC电能转换的光电电能转换模块的工作状态为： K1与 K2轮流导 通， 以使输出端轮流呈现正半周期和负半周期， 即产生交流输出。 下面以最筒单最实用的 DC-DC电能转换功能的光电电能转换模块为例， 详细阐述介绍其发明的光电电能转换模块的 基本结构。  The photoelectric energy conversion module 2 in the semiconductor photoelectric power conversion system of the present invention may have a DC-DC type electric energy conversion module (refer to FIG. 3), an AC-AC type electric energy conversion module (refer to FIG. 4), and an AC-DC type electric energy conversion module. (Refer to FIG. 5) and DC-AC type power conversion module (refer to FIG. 6). The main difference between the four is that the connection between the electro-optical conversion structure and the photoelectric conversion structure is different, and those skilled in the art are actually applying. Flexible settings can be required. It should be noted that the control switching elements K1 and K2 in Fig. 6 can be in various forms, such as a M0S tube, etc., which can be easily integrated on-chip. The working state of the photoelectric conversion module of DC-AC power conversion shown in Fig. 6 is as follows: K1 and K2 are turned on in turn, so that the output turns in a positive half cycle and a negative half cycle, that is, an AC output is generated. The following is an example of the photoelectric power conversion module of the most practical DC-DC power conversion function, and the basic structure of the photoelectric power conversion module of the invention is described in detail.
图 3 )为 DC-DC型光电电能转换模块的工作原理图， 其中箭头表示工作光线。 在输入 端的每个电光转换结构 21上输入直流电压 VI , 以在电光转换结构 21 中注入载流子复合产 生光子， 光子传输至光电转换结构 22 , 以在光电转换结构 22中激发产生不同的载流子， 并 通过内建电场分离，每个光电转换结构 11上输出直流电压 V2 ,从而利用光波实现能量传输。 需要指出的是， 电光转换结构 21 与光电转换结构 22 的工作光线应当匹配。 在该能量传 输过程中，一方面， VI和 V2的数值取决于电光转换结构 21和光电转换结构 11的材料特性 参数， 如材料种类、 应变特性、 禁带宽度、 掺杂浓度等， 故通过调节相应的特性参数以 实现能量转换效率最优化； 另一方面， 通过在输入端和输出端分别串联一定数目的电光转 换结构 21和光电转换结构 22, 利用二者的数目比例实现直流变压。 例如， 假设电光转 换结构 21为 m个，光电转换结构 11为 n个，则输出总电压 /输入总电压 =(n*V2)/(m*Vl)。 在本发明的一个实施例中， 电光转换结构可为一个， 光电转换结构可为多个； 在本发明 的另一个实施例中， 电光转换结构可为多个， 光电转换结构可为一个； 在本发明的再一 个实施例中， 电光转换结构及半导体光电转换结构可为均为多个。 Figure 3) is a working principle diagram of a DC-DC type photoelectric power conversion module, in which an arrow indicates working light. A DC voltage VI is input to each of the electro-optical conversion structures 21 at the input end to inject carrier-composited photons into the electro-optical conversion structure 21, and the photons are transmitted to the photoelectric conversion structure 22 to be excited in the photoelectric conversion structure 22 to generate different loads. The carriers are separated by a built-in electric field, and a DC voltage V2 is outputted on each of the photoelectric conversion structures 11, thereby realizing energy transmission using the optical waves. It should be noted that the electro-optic conversion structure 21 and the working light of the photoelectric conversion structure 22 should match. In the energy transmission process, on the one hand, the values of VI and V2 depend on the material property parameters of the electro-optical conversion structure 21 and the photoelectric conversion structure 11, such as material type, strain characteristics, forbidden band width, doping concentration, etc., Corresponding characteristic parameters The energy conversion efficiency is optimized. On the other hand, DC voltage transformation is realized by serially connecting a certain number of electro-optical conversion structures 21 and photoelectric conversion structures 22 at the input end and the output end, respectively. For example, assuming that there are m electro-optic conversion structures 21 and n photoelectric conversion structures 11, the total output voltage/input total voltage = (n*V2) / (m*Vl) is output. In an embodiment of the present invention, the electro-optical conversion structure may be one, and the photoelectric conversion structure may be multiple; in another embodiment of the present invention, the electro-optic conversion structure may be multiple, and the photoelectric conversion structure may be one; In still another embodiment of the present invention, the electro-optical conversion structure and the semiconductor photoelectric conversion structure may each be plural.
图 3 (b)为 DC-DC型光电电能转换模块的侧视结构示意图， 该图对应图 1中光电电能转 换模块 2在 A-A'处截得的侧视图。 从图 3 (b) 中可以看到， 光电电能转换模块 2进一步包 括： 隔离层 23, 形成在隔离层 23 之上的多个串联的电光转换结构 21, 以及形成在隔离层 23之上的多个串联的光电转换结构 22。 具体地：  Fig. 3(b) is a side view showing the structure of the DC-DC type photoelectric power conversion module, which corresponds to the side view of the photoelectric power conversion module 2 of Fig. 1 taken at A-A'. As can be seen from FIG. 3(b), the photoelectric power conversion module 2 further includes: an isolation layer 23, a plurality of series-connected electro-optic conversion structures 21 formed on the isolation layer 23, and a plurality of layers formed on the isolation layer 23. A series of photoelectric conversion structures 22 are provided. specifically:
电光转换结构 21可为发光二极管（ LED )、谐振发光二极管（RC-LED)或激光二极管（ LD )、 有机发光器件或量子点发光器件。 这几种器件均能够有效地将电能转换为光能， 工作性能稳 定可靠， 并且热效应少， 并且 RC-LED进一步具有方向性好、 调变速度较高的优点， LD进一 步具有单色性好、 亮度较高的优点。 电光转换结构 21 包括电光转换层， 其材料可为红黄 光的 AlGalnP, 紫外的 GaN和 InGaN, 蓝紫光的 InGaN、 AlGalnN和 ZnO, 红光或红外光 的 AlGaInAs、 GaAS、 InGaAs、 InGaAsP、 AlGaAs、 InGaAsNSb 以及其它 III族氮系化合 物、 III族砷系或磷系化合物半导体材料及其组合， 有机发光材料或量子点发光材料。  The electro-optical conversion structure 21 can be a light emitting diode (LED), a resonant light emitting diode (RC-LED) or a laser diode (LD), an organic light emitting device, or a quantum dot light emitting device. These devices are capable of efficiently converting electrical energy into light energy, have stable and reliable working performance, and have less thermal effects, and the RC-LED further has the advantages of good directivity and high modulation speed, and the LD further has good monochromaticity. The advantage of higher brightness. The electro-optical conversion structure 21 comprises an electro-optical conversion layer, which may be red-yellow AlGalnP, ultraviolet GaN and InGaN, blue-violet InGaN, AlGalnN and ZnO, red or infrared AlGaInAs, GaAS, InGaAs, InGaAsP, AlGaAs, InGaAsNSb and other Group III nitrogen-based compounds, Group III arsenic-based or phosphorus-based compound semiconductor materials, and combinations thereof, organic light-emitting materials or quantum dot luminescent materials.
光电转换结构 22 可为具有背接触 ( back contact ) 或埋接触 ( buried contact ) 的单面引出电极结构的半导体光伏电池、 量子点光伏电池或有机材料光伏电池。 具有背接 触或埋接触的单面引出电极结构的光电池， 其受光面可以避免受到电极遮光影响， 故能 量转换效率更高， 并且受光面更加均一美观， 可以降低组装难度， 提高组装密度。 光电 转换结构 11包括光电转换层，其材料可为 AlGalnP, InGaAs, InGaN, AlGalnN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, InGaAsNSb, 其它 III一 V族直接禁带半导体材料及其组合， 有机光伏材料或量子点光伏材料。  The photoelectric conversion structure 22 may be a semiconductor photovoltaic cell, a quantum dot photovoltaic cell, or an organic material photovoltaic cell having a single-sided extraction electrode structure with a back contact or a buried contact. A photovoltaic cell having a single-sided extraction electrode structure with back contact or buried contact can avoid the influence of electrode shading on the light-receiving surface, so that the energy conversion efficiency is higher, and the light-receiving surface is more uniform and beautiful, which can reduce assembly difficulty and increase assembly density. The photoelectric conversion structure 11 includes a photoelectric conversion layer, and the material thereof may be AlGalnP, InGaAs, InGaN, AlGalnN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, InGaAsNSb, other III-V direct ban With semiconductor materials and combinations thereof, organic photovoltaic materials or quantum dot photovoltaic materials.
隔离层 23对电光转换结构 21发出的工作光线透明， 用于电光转换结构 21与光电转换 结构 22之间的电气隔离。 隔离原理可以是利用材料本身的绝缘特性进行隔离， 还可以通过 在多个电光转换结构 21、 多个光电转换结构 22之间设置反偏 PN结结构进行隔离。 在本发 明的一个实施例中，隔离层 23可以为绝缘材料，例如固态透明绝缘介盾的 A 1203 , A1N, Si02, MgO, Si3N4, BN, 金刚石， LiA102, LiGa02, GaAs, SiC, Ti02, Zr02, SrTi03, Ga203 , ZnS, SiC, MgAl204 , LiNb03, LiTa03, 乙铝石榴石（YAG)晶体， KNb03, LiF, MgF2, BaF2, GaF2, LaF3, BeO, GaP, GaN以及稀土氧化物 REO 中的一种及其组合， 也可以为填充在壳体中 的液态透明绝缘介盾的纯水， CC14, CS2或者 SF6等气态透明绝缘介盾。 在本发明的另一 实施例中， 隔离层 23可以为半导体材料， 例如 GaP , GaAs , InP , GaN , S i , Ge , GaSb以 及其它对工作光线透明的半导体材料， 通过对隔离层 23 进行掺杂、 注入等工艺， 以在 多个电光转换结构 21与隔离层 23之间， 以及多个光电转换结构 22与 23之间形成 PN结， 然后将 PN结置于反偏状态以禁止导通电流的出现， 从而实现多个电光转换结构 21与多 个光电转换结构 22之间的电气隔离。 The isolation layer 23 is transparent to the working light emitted by the electro-optical conversion structure 21 for electrical isolation between the electro-optical conversion structure 21 and the photoelectric conversion structure 22. The isolation principle may be isolated by using the insulating properties of the material itself, and may also be isolated by providing a reverse bias PN junction structure between the plurality of electro-optical conversion structures 21 and the plurality of photoelectric conversion structures 22. In an embodiment of the present invention, the isolation layer 23 may be an insulating material such as A 1 2 0 3 , A1N, Si0 2 , MgO, Si 3 N 4 , BN, diamond, LiA10 2 , LiGa0 of a solid transparent insulating shield. 2 , GaAs, SiC, Ti0 2 , Zr0 2 , SrTi0 3 , Ga 2 0 3 , ZnS, SiC, MgAl 2 0 4 , LiNb0 3 , LiTa0 3 , Ethylene Garnet (YAG) crystal, KNb0 3 , LiF, MgF 2 , BaF 2 , GaF 2 , LaF 3 , BeO, GaP, GaN and rare earth oxide REO, and a combination thereof, may also be a liquid transparent insulating shield filled with pure water in the shell, CC1 4 , Gaseous transparent insulation shields such as CS 2 or SF 6 . Another in the present invention In an embodiment, the isolation layer 23 may be a semiconductor material, such as GaP, GaAs, InP, GaN, S i, Ge, GaSb, and other semiconductor materials transparent to the working light, by doping, implanting, etc. the isolation layer 23, A PN junction is formed between the plurality of electro-optical conversion structures 21 and the isolation layer 23, and between the plurality of photoelectric conversion structures 22 and 23, and then the PN junction is placed in a reverse bias state to inhibit the occurrence of the on-current, thereby achieving a plurality of Electrical isolation between the electro-optic conversion structure 21 and the plurality of photoelectric conversion structures 22.
其中， 光电转换结构 11的数目与电光转换结构 21的数目成比例以实现变压， 且光电转 换结构 11的吸收光谱与电光转换结构 21的发射光谱之间频谱匹配。 所谓频谱匹配是指， 电 光转换结构 21发出的光线要与光电转换结构 22光电转换效率最优化的光线特性匹配， 以使电光 -光电能量转换效率较高， 转换过程中的光子的能损较少。 具体地： 电光转换 结构 21的发射光可以是与光电转换结构 22的吸收效率最大处对应的单色光， 也可能为 其他频率的、 能使光电转换结构 22发生量子效率大于 1 的光伏效应的特定频率光线， 一种优化的情况是电光转换层发射的光子能量的大小既能确保光子可以被光电转换层吸收， 又不会由于光子能量过高导致多余能量作为热损失掉，一种可能的理想状况是电光转换层与 光电转换层有源材料的禁带宽度一致，从而既能确保光线吸收又不会 I起剩余光子能量的损 失。 需要说明的是， 上述 "单色光" 具有一定的光谱宽度， 例如， 对于红光 LED来说具 有 20nm左右的光谱宽度， 而非限定某个具体的频率点， 此为公知技术， 在此不再赘述。  Here, the number of the photoelectric conversion structures 11 is proportional to the number of the electro-optical conversion structures 21 to realize the transformation, and the spectrum of the absorption spectrum of the photoelectric conversion structure 11 and the emission spectrum of the electro-optical conversion structure 21 are matched. The so-called spectrum matching means that the light emitted by the electro-optical conversion structure 21 is matched with the light characteristic of the photoelectric conversion structure 22 to optimize the photoelectric conversion efficiency, so that the electro-optical-photoelectric energy conversion efficiency is high, and the photon energy loss during the conversion process is less. . Specifically, the emitted light of the electro-optic conversion structure 21 may be a monochromatic light corresponding to the maximum absorption efficiency of the photoelectric conversion structure 22, or may be a photovoltaic effect of other frequencies that enables the photoelectric conversion structure 22 to have a quantum efficiency greater than 1. A specific frequency of light, an optimized situation is that the photon energy emitted by the electro-optic conversion layer can ensure that photons can be absorbed by the photoelectric conversion layer, and no excess energy is lost as heat due to excessive photon energy. Ideally, the electro-optical conversion layer is identical to the forbidden band width of the active material of the photoelectric conversion layer, thereby ensuring light absorption without loss of residual photon energy. It should be noted that the above-mentioned "monochromatic light" has a certain spectral width. For example, for a red LED, it has a spectral width of about 20 nm, and does not limit a specific frequency point. This is a well-known technique. Let me repeat.
需要说明的是， 虽然图 3示出的是多个电光转换结构 21与多个光电转换结构 22位于隔 离层 23两侧的情况， 但在本发明另一些实施例中， 也可以是多个电光转换结构 21与多个光 电转换结构 11位于隔离层 23的同一侧， 并在隔离层 23底部设置反光结构以使多个电光转 换结构 21的发射光经反光结构后发送至多个光电转换结构 22。  It should be noted that, although FIG. 3 shows a case where a plurality of electro-optic conversion structures 21 and a plurality of photoelectric conversion structures 22 are located on both sides of the isolation layer 23, in other embodiments of the present invention, a plurality of electro-optic lights may be used. The conversion structure 21 and the plurality of photoelectric conversion structures 11 are located on the same side of the isolation layer 23, and a reflective structure is disposed at the bottom of the isolation layer 23 to transmit the emitted light of the plurality of electro-optic conversion structures 21 to the plurality of photoelectric conversion structures 22 through the reflective structure.
优选地， 在光电电能转换模块 2中， 光线传播路径上的各层材料的折射系数匹配。 换 言之， 电光转换结构 21、 隔离层 23以及光电转换结构 11的折射率满足匹配条件。 所谓匹 配是指三者的折射系数类似， 或者三者的折射系数沿着光路传播的方向各层材料的折射 系数逐渐递增， 这样可有效避免光传播过程中在各层界面处发生全反射现象， 获得良好 的光电能量转换效率。  Preferably, in the photoelectric power conversion module 2, the refractive indices of the materials of the respective layers on the light propagation path are matched. In other words, the refractive indices of the electro-optical conversion structure 21, the isolation layer 23, and the photoelectric conversion structure 11 satisfy the matching conditions. The so-called matching means that the refractive coefficients of the three are similar, or the refractive coefficients of the three layers gradually increase along the direction of propagation of the optical path, which can effectively avoid the phenomenon of total reflection at the interface of each layer during light propagation. A good photoelectric energy conversion efficiency is obtained.
优选地， 光电电能转换模块 2中还可进一步包括光学陷阱， 该光学陷阱用于将工作光 线限制在光电电能转换模块 2 内部， 特别是限制在实现能量转换过程的电光转换层和光 电转换层之间， 防止漏光带来的光能量损失， 提高能量转换效率。  Preferably, the photoelectric power conversion module 2 may further include an optical trap for limiting the working light to the interior of the photoelectric power conversion module 2, in particular, the electro-optic conversion layer and the photoelectric conversion layer for realizing the energy conversion process. In the meantime, it prevents light energy loss caused by light leakage and improves energy conversion efficiency.
为使本发明的光电电能转换模块 2更好地被本领域技术人员理解， 发明人将本发明 中的半导体电光转换结构 21和半导体光电转换结构 22进一步划分为多个层次进行详细 介绍。 需要说明的是， 下文对本发明的阐述侧重于各层次的材料及用途， 为筒便起见， 设定半导体光电变压器为双面结构， 半导体电光转换结构和半导体光电转换结构的数目 均为一个。 图 7所示为才 居本发明一个实施例的光电电能转换模块 2的结构示意图。该光电电能转 换模块 1包括： 第一电极层 100; 形成在第一电极层 100之上的电光转换层 102; 形成在电 光转换层 102之上的第二电极层 104; 形成在第二电极层 104之上的第一隔离层 106; 形成 在第一隔离层 106之上的第三电极层 108; 形成在第三电极层 108之上的光电转换层 110; 以及形成在光电转换层 110之上的第四电极层 112。 In order to make the photoelectric power conversion module 2 of the present invention better understood by those skilled in the art, the inventors further divide the semiconductor electro-optical conversion structure 21 and the semiconductor photoelectric conversion structure 22 in the present invention into a plurality of levels for detailed description. It should be noted that the following description of the present invention focuses on the materials and uses of the various layers. For the sake of convenience, the semiconductor photoelectric transformer is set to have a double-sided structure, and the number of the semiconductor electro-optical conversion structure and the semiconductor photoelectric conversion structure is one. FIG. 7 is a schematic structural view of an optoelectronic power conversion module 2 in accordance with an embodiment of the present invention. The photoelectric power conversion module 1 includes: a first electrode layer 100; an electro-optical conversion layer 102 formed on the first electrode layer 100; a second electrode layer 104 formed on the electro-optical conversion layer 102; and a second electrode layer formed on the second electrode layer a first isolation layer 106 over 104; a third electrode layer 108 formed over the first isolation layer 106; a photoelectric conversion layer 110 formed over the third electrode layer 108; and formed over the photoelectric conversion layer 110 The fourth electrode layer 112.
其中， 电光转换层 102用以将输入的直流电转换为光， 发出所需要的波长范围的工作光 线。 工作光线包括从 lOOnm的紫外光到 10画的红外光的整个光语范围中的一个或多个波段 的组合， 优选为单频率的光线， 例如 620nm的红光、 460nm的蓝光、 380nm的紫光， 以有利 于运用成熟的现有技术制造电光转换层。 例如电光转换层 102可以釆用具有高量子效率、 高 电光转换效率的结构和材料。 具体地， 可以为 LED结构或激光器结构， 一般包括有源层， 限 制层， 电流分散层， PN 结等结构， 其中有源层可以为多量子阱结构， 激光器结构的电光转 换层还包括谐振腔， LED结构包括谐振 LED结构。 电光转换层 102的材料选择基于材料自 身特性（如缺陷密度、 能带结构等）和所需要的光波特性（如波长范围）， 例如可以釆用红 黄光的 AlGalnP, 紫外的 GaN和 InGaN、 蓝紫光的 InGaN和 AlGaInN、 ZnO、 红光或红外 光的 AlGaInAs、 GaAS、 InGaAs 、 以及其它 111族氮系化合物、 III族 As 系或碑系化合 物半导体材料及其组合，其中缺陷密度低、光转换效率高的材料（如 AlGaInP、 InGaN, GaN) 为优选。  The electro-optic conversion layer 102 is configured to convert the input direct current into light to emit a working light of a desired wavelength range. The working light includes a combination of one or more wavelength bands from the ultraviolet light of 100 nm to the infrared light of 10 paintings, preferably a single frequency of light, such as 620 nm red light, 460 nm blue light, 380 nm purple light, The electro-optical conversion layer is fabricated in a manner that facilitates the use of mature prior art. For example, the electro-optical conversion layer 102 can employ structures and materials having high quantum efficiency and high electro-optical conversion efficiency. Specifically, it may be an LED structure or a laser structure, and generally includes an active layer, a limiting layer, a current dispersion layer, a PN junction, etc., wherein the active layer may be a multiple quantum well structure, and the electro-optical conversion layer of the laser structure further includes a resonant cavity. The LED structure includes a resonant LED structure. The material selection of the electro-optic conversion layer 102 is based on the material's own characteristics (such as defect density, band structure, etc.) and the desired light wave characteristics (such as wavelength range), such as red-yellow AlGalnP, ultraviolet GaN and InGaN, blue. Violet InGaN and AlGaInN, ZnO, red or infrared AlGaInAs, GaAS, InGaAs, and other Group 111 nitrogen compounds, Group III As systems or monumental compound semiconductor materials and combinations thereof, wherein low defect density, light conversion efficiency High materials such as AlGaInP, InGaN, GaN are preferred.
其中， 光电转换层 110用以将光转换为电以实现变压。 光电转换层 110的材料包括 AlGalnP, InGaAs, InGaN, AlGalnN, InGaAsP, InGaP, 以及其它 III-V族直接禁带半 导体材料及其组合。 电光转换层 102—般可以选用直接禁带半导体材料， 其能带结构和 光电转换层 110的能带结构相匹配以使电光转换层 102发出的工作光线的波段与光电转 换层 110吸收效率最高的波段相匹配， 以达到最高的光波能量转换效率。  The photoelectric conversion layer 110 is used to convert light into electricity to achieve voltage transformation. Materials of the photoelectric conversion layer 110 include AlGalnP, InGaAs, InGaN, AlGalnN, InGaAsP, InGaP, and other Group III-V direct-gap semiconductor materials and combinations thereof. The electro-optical conversion layer 102 is generally selected from a direct band gap semiconductor material, and the band structure is matched with the band structure of the photoelectric conversion layer 110 such that the wavelength band of the working light emitted by the electro-optical conversion layer 102 and the photoelectric conversion layer 110 have the highest absorption efficiency. The bands are matched to achieve the highest lightwave energy conversion efficiency.
其中， 第一隔离层 106、 第二电极层 104和第三电极层 108对电光转换层 102发出 的工作光线透明。 在本发明实施例中， 第二电极层 104、 第一隔离层 106和第三电极层 108材料的禁带宽度大于电光转换层 102发出的工作光线的光子能量， 以防止第二电极 层 104、 隔离 106层和第三电极层 108对所述工作光线的吸收， 提高光波转换效率。  The first isolation layer 106, the second electrode layer 104 and the third electrode layer 108 are transparent to the working light emitted by the electro-optical conversion layer 102. In the embodiment of the present invention, the forbidden band width of the second electrode layer 104, the first isolation layer 106, and the third electrode layer 108 is greater than the photon energy of the working light emitted by the electro-optical conversion layer 102 to prevent the second electrode layer 104, The absorption of the working light by the isolation 106 layer and the third electrode layer 108 improves the light wave conversion efficiency.
此外， 第一隔离层 106、 第二电极层 104和第三电极层 108的材料折射系数与电光 转换层 102和光电转换层 110的材料折射系数匹配， 以避免光传播过程中在界面处发生 全反射。 由于当且仅当光线从折射系数较大的材料进入折射系数较小的材料时发生全反射， 故在本发明一个优选的实施例中， 第二电极层 104、 第一隔离层 106、 第三电极层 108 和光电转换层 110的材料折射系数相同， 以避免光从电光转换层 102传输至光电转换层 110 时在各界面处发生全发射； 在本发明一个更优选的实施例中， 第二电极层 104、 第 一隔离层 106、 第三电极层 108和光电转换层 110的材料折射系数梯次增加。 所述 "梯 次增加 "的含义是：每个所述层的材料折射系数不小于其前一个所述层的材料折射系数， 即某些所述层的材料折射系数可以与其前一个所述层相同，但所述各层的材料折射系数 整体呈递增趋势； 在本发明一个更优选的实施例中， 第二电极层 104、 第一隔离层 106、 第三电极层 108和光电转换层 110的材料折射系数逐渐增加。通过上述更优选的实施例， 一方面避免光沿电光转化层 102向光电转换层 110方向传输时（包括电光转换层 102产 生的光以及所述各电极层和各反射层反射的光）发生全反射， 以提高光的传输效率； 另 一方面促使光从光电转换层 110向电光转换层 102方向传输时（主要包括光电转换层 110 的第三和第四电极以及第二反射层反射的光）发生全发射， 以将更多的光限制在光电转 化层 110中， 从而提高光转换为电的效率。 In addition, the material refractive index of the first isolation layer 106, the second electrode layer 104, and the third electrode layer 108 are matched with the material refractive index of the electro-optical conversion layer 102 and the photoelectric conversion layer 110 to avoid full occurrence at the interface during light propagation. reflection. Since the total reflection occurs when light enters a material having a small refractive index from a material having a large refractive index, in a preferred embodiment of the present invention, the second electrode layer 104, the first isolation layer 106, and the third The material refractive index of the electrode layer 108 and the photoelectric conversion layer 110 is the same to avoid full emission at each interface when light is transmitted from the electro-optical conversion layer 102 to the photoelectric conversion layer 110; in a more preferred embodiment of the present invention, the second The material refractive index of the electrode layer 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 is increased stepwise. The meaning of the "step increase" is that the material refractive index of each of the layers is not less than the material refractive index of the previous layer, that is, the material refractive index of some of the layers may be the same as the previous one. , but the material refractive index of each layer The overall trend is increasing; in a more preferred embodiment of the invention, the material refractive indices of the second electrode layer 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 are gradually increased. With the above-mentioned more preferred embodiment, on the one hand, when the light is transmitted along the electro-optical conversion layer 102 in the direction of the photoelectric conversion layer 110 (including the light generated by the electro-optic conversion layer 102 and the light reflected by the respective electrode layers and the respective reflective layers), the entire light is generated. Reflecting to improve light transmission efficiency; on the other hand, causing light to be transmitted from the photoelectric conversion layer 110 toward the electro-optical conversion layer 102 (mainly including the third and fourth electrodes of the photoelectric conversion layer 110 and the light reflected by the second reflective layer) Full emission occurs to confine more light in the photoelectric conversion layer 110, thereby improving the efficiency of light conversion to electricity.
另外， 本发明还可以釆用在不同材料层的界面处通过粗糙化或规则的图形如光子晶体 结构等来减低全反射。 故在本发明优选的实施例中， 电光转换层 102、 第二电极层 104、 第一隔离层 106、 第三电极层 108和光电转换层 110中的至少一个具有粗糙化表面或光 子晶体结构， 以增大光透射率， 降低光的全反射。  In addition, the present invention can also reduce total reflection by roughening or regular patterns such as photonic crystal structures at the interface of different material layers. Therefore, in a preferred embodiment of the present invention, at least one of the electro-optic conversion layer 102, the second electrode layer 104, the first isolation layer 106, the third electrode layer 108, and the photoelectric conversion layer 110 has a roughened surface or a photonic crystal structure. In order to increase the light transmittance, the total reflection of light is reduced.
第一隔离层 106用于实现电光转换层 102和光电转换层 110的电气隔离， 使输入电 压和输出电压不相互影响， 同时对工作光线透明， 使携带能量的光线能够从光电转换层 102传输到电光转换层 110, 实现能量的传输， 最终实现电压变换。 第一隔离层 106的 厚度取决于输入输出的电压的大小以及绝缘要求， 第一隔离层越厚， 绝缘效果越好， 能 承受的击穿电压越高， 但同时对光的衰减可能越大， 因此绝缘层厚度的确定原则为： 在 满足绝缘要求下越薄越好。 基于上述要求， 在本发明实施例中， 第一隔离层 106的材料 优选为 A 1203 , A1N, Si02, MgO, Si3N4, BN, 金刚石， LiA102, LiGa02, 半绝缘的 GaAs、 SiC或 GaP, GaN 中的一种及其组合， 以及稀土氧化物 RE0及其组合。 第二电极层 104 和第三电极层 108的材料可以为重掺杂的 GaAs、GaN、GaP,AlGaInP、AlGaInN、AlGaInAs, 或者导电透明金属氧化物材料 IT0 (铟锡氧化物） 、 Sn02、 ZnO及其组合等。 The first isolation layer 106 is used to realize electrical isolation between the electro-optical conversion layer 102 and the photoelectric conversion layer 110, so that the input voltage and the output voltage do not affect each other, and are transparent to the working light, so that the light carrying the energy can be transmitted from the photoelectric conversion layer 102 to The electro-optic conversion layer 110 realizes energy transfer and finally realizes voltage conversion. The thickness of the first isolation layer 106 depends on the magnitude of the input and output voltage and the insulation requirement. The thicker the first isolation layer, the better the insulation effect, the higher the breakdown voltage that can withstand, but the greater the attenuation of light at the same time, Therefore, the thickness of the insulation layer is determined as follows: The thinner the better the insulation requirements are met. Based on the above requirements, for example, the first spacer layer material 106 is preferably A 1 2 0 3, A1N, Si0 2, MgO, Si 3 N 4, BN, diamond, LiA10 2, LiGa0 2, semi-insulating in the embodiment of the present invention, One of GaAs, SiC or GaP, GaN, and combinations thereof, and rare earth oxide RE0 and combinations thereof. The material of the second electrode layer 104 and the third electrode layer 108 may be heavily doped GaAs, GaN, GaP, AlGaInP, AlGaInN, AlGaInAs, or conductive transparent metal oxide material IT0 (indium tin oxide), Sn0 2 , ZnO And combinations thereof, etc.
在本发明一个优选的实施例中， 第一电极层 100和电光转换层 102之间还包括第一 反射层 101, 第四电极层 112和光电转换层 110之间还包括第二反射层 111, 如图 7所 示。所述第一和第二反射层将光限制在电光转换层 102和光电转换层 110之间来回反射， 以防止光泄露， 提高光的能量转换效率。 反射层的材料需要满足对工作光线反射效率高、 材料性能稳定、 界面接触电阻低、 导电性好等要求。 具体可以通过以下两种方式实现： 一种 是布拉格反射镜结构， 利用多层折射率不同的材料层实现反射， 比如釆用两种不同折射率的 材料 (例如折射率相差的 0.6的 GaAs和 AlAs , 折射率相差 2.2的 Si和稀土氧化物 RE0 )制 成多层结构以实现反射； 一种是金属全反射镜结构， 可以直接淀积高导电率和导热率的金 属实现反射， 例如 Ag、 Au、 Cu、 Ni、 Al、 Sn、 Co、 W及其组合等。 由于与反射层相接触的背 电极层 （即第一电极层 100和第四电极层 112 ) 的厚度较厚， 故反射层釆用金属全反射 镜结构同时兼具散热的功能， 可以将变压器内部产生的热量传导出来。  In a preferred embodiment of the present invention, the first reflective layer 101 is further included between the first electrode layer 100 and the electro-optic conversion layer 102, and the second reflective layer 111 is further included between the fourth electrode layer 112 and the photoelectric conversion layer 110. As shown in Figure 7. The first and second reflective layers confine the light back and forth between the electro-optic conversion layer 102 and the photoelectric conversion layer 110 to prevent light leakage and improve energy conversion efficiency of the light. The material of the reflective layer needs to meet the requirements of high reflection efficiency of working light, stable material performance, low interface contact resistance, and good electrical conductivity. Specifically, it can be realized in the following two ways: One is a Bragg mirror structure, which realizes reflection by using a plurality of material layers having different refractive indices, for example, two materials having different refractive indexes (for example, GaAs and AlAs having a refractive index difference of 0.6) , Si with a refractive index difference of 2.2 and rare earth oxide RE0) are made into a multilayer structure to achieve reflection; one is a metal total mirror structure, which can directly deposit a metal with high conductivity and thermal conductivity to achieve reflection, such as Ag, Au , Cu, Ni, Al, Sn, Co, W, combinations thereof, and the like. Since the thickness of the back electrode layer (ie, the first electrode layer 100 and the fourth electrode layer 112) in contact with the reflective layer is thick, the reflective layer has a metal total reflection mirror structure and has a heat dissipation function, and the transformer interior can be The heat generated is conducted out.
其中， 第一电极层 100和第四电极层 112用作引出电极以输入输出电流， 由于不需要 对工作光线透明， 故可以釆用金属、 合金、 陶瓷、 玻璃、 塑料、 导电氧化物等材料形成单层 和 /或多层复合结构， 其中优选为低电阻率的金属， 例如 Cu。 优选地， 可以通过增加金属电 极层的厚度以降低电阻， 同时起到热沉的作用以散热。 The first electrode layer 100 and the fourth electrode layer 112 are used as the extraction electrodes for input and output currents. Since they are not required to be transparent to the working light, they can be formed by using metals, alloys, ceramics, glass, plastics, conductive oxides and the like. A single layer and/or a multilayer composite structure, of which a low resistivity metal such as Cu is preferred. Preferably, by adding metal electricity The thickness of the pole layer reduces the resistance and acts as a heat sink to dissipate heat.
需指出的是， 由于该光电电能转换模块 2的输入阈值电压和输出电压决定于光电转换层 和电光转换层的材料特性参数， 如禁带宽度、 掺杂浓度等， 故通过调节相应的特性参数以实 现变压。 进一步地， 可以根据实际需要， 通过调整电光转换层 102和光电转换层 110的数 目比以提高变压幅度， 实现预期变压， 例如， 如图 8所示， 光电电能转换模块 2 包括一 个电光转换层 102和两个光电转换层 110A和 110B , 该结构相对于包含相同单个电光转 换层和单个光电转换层的光电电能转换模块 2 , 增加了垂直结构的变压， 故变压比更大。  It should be noted that, since the input threshold voltage and the output voltage of the photoelectric power conversion module 2 are determined by the material characteristic parameters of the photoelectric conversion layer and the electro-optical conversion layer, such as the forbidden band width, the doping concentration, etc., the corresponding characteristic parameters are adjusted. To achieve transformation. Further, the expected voltage transformation can be realized by adjusting the ratio of the number of the electro-optical conversion layer 102 and the photoelectric conversion layer 110 according to actual needs, for example, as shown in FIG. 8, the photoelectric power conversion module 2 includes an electro-optical conversion. The layer 102 and the two photoelectric conversion layers 110A and 110B increase the transformation of the vertical structure with respect to the photoelectric power conversion module 2 including the same single electro-optical conversion layer and a single photoelectric conversion layer, so that the transformation ratio is larger.
在本发明的一个实施例中， 将第一电极层 1 00、 形成在第一电极层 100之上的电光 转换层 102、以及形成在电光转换层 1 02之上的第二电极层 104作为一个电光转换结构； 同理将第三电极层 108、 形成在第三电极层 108之上的光电转换层 110、 以及形成在光 电转换层 1 10之上的第四电极层 1 12作为一个光电转换结构。 该半导体直流光电变压器 还可以在垂直方向上包括多层交替堆叠的电光转换结构和光电转换结构。每相邻的电光 转换结构和光电转换结构之间包括隔离层， 以进一步提高直流电压变压比。 其中， 多个 电光转换结构 （或多个光电转换结构） 相互串联， 每个电光转换结构 （或每个光电转 换结构）的结构可以参考上述实施例所述的结构。 图 9所示为在垂直方向上具有两个电 光转换结构和一个光电转换结构的半导体直流光电变压器结构示意图， 其中， 电光转换 结构和光电转换结构之间分别包括第一隔离层 106和第二隔离层 107。 需指出的是， 在 该结构中， 除首个和末个电光（或光电）转换结构之外， 中间每个电光转换结构和光电 转换结构的第一电极层和第四电极层不能选用金属电极， 而选用与第二和第三电极层相 同的重掺杂的半导体材料 GaAs、 GaN、 GaP , A lGa InP、 A lGa I nN、 A lGa lnAs , 或者导电透 明金属氧化物材料 I T0、 Sn02、 ZnO及其组合， 从而有利于光线传播。 In one embodiment of the present invention, the first electrode layer 100, the electro-optical conversion layer 102 formed over the first electrode layer 100, and the second electrode layer 104 formed over the electro-optical conversion layer 102 are used as one The electro-optic conversion structure; similarly, the third electrode layer 108, the photoelectric conversion layer 110 formed over the third electrode layer 108, and the fourth electrode layer 12 formed over the photoelectric conversion layer 110 as a photoelectric conversion structure . The semiconductor DC photoelectric transformer may further include a plurality of layers of alternately stacked electro-optical conversion structures and photoelectric conversion structures in a vertical direction. An isolation layer is included between each adjacent electro-optical conversion structure and the photoelectric conversion structure to further increase the DC voltage transformation ratio. Wherein, the plurality of electro-optic conversion structures (or the plurality of photoelectric conversion structures) are connected in series with each other, and the structure of each of the electro-optic conversion structures (or each of the photoelectric conversion structures) may refer to the structures described in the above embodiments. 9 is a schematic structural view of a semiconductor DC photoelectric transformer having two electro-optic conversion structures and one photoelectric conversion structure in a vertical direction, wherein the electro-optical conversion structure and the photoelectric conversion structure respectively include a first isolation layer 106 and a second isolation Layer 107. It should be noted that, in this structure, in addition to the first and last electro-optic (or photoelectric) conversion structures, the first electrode layer and the fourth electrode layer of each of the electro-optical conversion structures and the photoelectric conversion structure may not be selected from metal electrodes. And the same heavily doped semiconductor material GaAs, GaN, GaP, A lGa InP, A lGa I nN, A lGa lnAs , or conductive transparent metal oxide material I T0 , Sn0 2 is selected as the second and third electrode layers. ZnO, and combinations thereof, to facilitate light propagation.
本发明提供一种光电电能转换模块 2 , 通过在光电电能转换模块 1 的输入端设置电 光转换层， 利用半导体电子能级间跃迁产生的光辐射， 将直流电转换为光进行传输， 在 输出端设置光电转换层以将光转化为电能输出， 由于输入端与输出端单位单元的电压分 别取决于电光转换层和光电转换层材料的特性参数及数目， 故该变压器可直接实现直流 电压的变压。  The invention provides an optoelectronic power conversion module 2, which is provided with an electro-optical conversion layer at an input end of the photoelectric power conversion module 1, and converts direct current into light by using optical radiation generated by transitions between semiconductor electronic energy levels, and is set at the output end. The photoelectric conversion layer converts light into electric energy output. Since the voltage of the input unit and the output unit unit depends on the characteristic parameters and the number of the electro-optical conversion layer and the photoelectric conversion layer material, the transformer can directly realize the DC voltage transformation.
在本发明的一个优选实施例中， 如图 10所示， 半导体光电电能转换系统还包括调节模 块 3 , 调节模块 3可以固定在基板 1上， 也可独立设置。 调节模块 3与多个光电电能转换模 块 2的总输入端 （in )和总输出端（out)相连， 用于通过监测总输出端的工作参数， 反馈调 节总输入端的工作参数， 以维持半导体光电电能转换系统进行稳压或调压， 或者使光电电能 转换模块 1工作在最佳状态或特定工作点上。图 11是图 10所示的半导体光电电能转换系统 的工作原理图。 如图 11所示， 调节模块 3首先探测输出端的多个光电转换结构 22的电流电 压值， 随后调节模块 3中的微处理芯片对探测值做计算处理得出相应指令， 控制元件根据指 令对输入端的多个电光转换结构 21进行调控。 具体地， 调节元件可为功率 MOSFET, JFET, 晶闸管， BJT, 可变电阻等。 在本发明的一个优选实施例中， 光电电能转换模块 2为扁平型器件， 并且其输入端和输 出端呈对角线交叉分布。具体地， 如图 12 (a)所示， 光电电能转换模块 2可为扁平矩形片状， 其输入正极与输入负极位于主体的一条对角线 L 1上， 其输出正极和输出负极位于主体的另 一条对角线 L2上。 优选地， 还可以将输入正负极、 输出正负极分别设置在靠近顶面和底面 的位置。 需要说明的是， 光电电能转换模块 2还可以为扁平的圆形片状、 扁平的圆角矩形片 状等。 图 12 (b)为图 12 (a)所示的光电电能转换模块 2的顶面视图； 图 12 (c)为图 12 (a)所示 的光电电能转换模块 2的底面视图。 该实施例中， 扁平型器件的设计， 一方面增大了工作光 线的传输面积， 另一方面有利于封装集成后的半导体光电电能转换系统的散热； 输入端和输 出端的引线呈对角线分布， 则有利于各个模块之间直线连接， 布线清晰， 线路产生的感抗等 千扰较小， 并且模块内部的电极之间绝缘距离长， 绝缘特性较好。 In a preferred embodiment of the present invention, as shown in FIG. 10, the semiconductor photoelectric power conversion system further includes an adjustment module 3, which may be fixed on the substrate 1 or independently. The adjustment module 3 is connected to the total input terminal (in) and the total output terminal (out) of the plurality of photoelectric power conversion modules 2, for monitoring the operating parameters of the total output terminal by feedback, and adjusting the operating parameters of the total input terminal to maintain the semiconductor photoelectric energy The conversion system is regulated or regulated, or the photovoltaic power conversion module 1 is operated at an optimum state or at a specific operating point. Figure 11 is a diagram showing the operation of the semiconductor photoelectric power conversion system shown in Figure 10. As shown in FIG. 11, the adjustment module 3 first detects the current and voltage values of the plurality of photoelectric conversion structures 22 at the output end, and then the micro-processing chip in the adjustment module 3 performs a calculation process on the detection value to obtain a corresponding instruction, and the control component inputs the input according to the instruction. A plurality of electro-optical conversion structures 21 at the ends are regulated. Specifically, the adjustment component can be a power MOSFET, a JFET, a thyristor, a BJT, a variable resistor, or the like. In a preferred embodiment of the invention, the optoelectronic power conversion module 2 is a flat type device, and its input end and output end are diagonally distributed. Specifically, as shown in FIG. 12( a ), the photoelectric power conversion module 2 can be a flat rectangular sheet shape, and the input positive pole and the input negative pole are located on a diagonal line L 1 of the main body, and the output positive pole and the output negative pole are located in the main body. The other diagonal is on L2. Preferably, the input positive and negative electrodes and the output positive and negative electrodes may also be disposed at positions close to the top surface and the bottom surface, respectively. It should be noted that the photoelectric power conversion module 2 may also be a flat circular sheet shape, a flat rounded rectangular sheet shape, or the like. Figure 12 (b) is a top plan view of the photoelectric power conversion module 2 shown in Figure 12 (a); Figure 12 (c) is a bottom view of the photoelectric power conversion module 2 shown in Figure 12 (a). In this embodiment, the design of the flat type device increases the transmission area of the working light on the one hand, and facilitates the heat dissipation of the integrated semiconductor photoelectric power conversion system on the other hand; the leads of the input end and the output end are diagonally distributed. , it is beneficial to the straight connection between the modules, the wiring is clear, the inductance generated by the line is less disturbed, and the insulation distance between the electrodes inside the module is long, and the insulation characteristics are better.
在本发明的一个实施例中， 为了扩展输出电压， 可如图 1 3示， 将多个光电电能转换模 块 2顺次串联。 多个光电电能转换模块 2正面朝上和反面朝上交替排布， 可以通过较短的、 不交叉的引线顺次相连， 以减少线材耗用， 并减少电磁千扰。  In one embodiment of the present invention, in order to expand the output voltage, a plurality of photoelectric power conversion modules 2 may be sequentially connected in series as shown in Fig. 13. A plurality of photoelectric power conversion modules 2 are alternately arranged face up and back up, and can be sequentially connected by short, non-intersecting leads to reduce wire consumption and reduce electromagnetic interference.
在本发明的一个实施例中， 为了扩展输出功率， 可如图 14示， 先将多个光电电能转换 模块 2串联后， 然后将若千个串联支路进行并联。 优选地， 在每一个串联支路上还可以串联 防逆流元件 D。 未设置防逆流元件 D时， 当某一个串联支路故障时由于其自身具有一定阻值 可视为一个负载， 此时其他串联支路可作为电源， 加载在该 "负载，， 上， 不能得到正常的电 压输出。 设置防逆流元件 D后， 由于其单向导通特性， 可以避免上述情况的发生， 保证正常 的电压输出。  In one embodiment of the present invention, in order to expand the output power, as shown in Fig. 14, a plurality of photoelectric power conversion modules 2 are connected in series, and then thousands of series branches are connected in parallel. Preferably, the backflow prevention element D can also be connected in series on each of the series branches. When the anti-backflow component D is not set, when a series branch circuit fails, it can be regarded as a load because it has a certain resistance value. At this time, the other series branch can be used as a power source, and the load can be loaded on the "load," Normal voltage output. After the anti-backflow component D is set, due to its unidirectional conduction characteristics, the above situation can be avoided and a normal voltage output can be ensured.
在本发明的一个实施例中，半导体光电电能转换系统可通过对输入端和输出端釆用共地 或不共地以形成隔离电源或非隔离电源。 对于普通的变压系统， 隔离电源较难实现； 而本发 明的半导体光电电能转换系统由于其自身特点， 很容易实现。  In one embodiment of the invention, a semiconductor opto-electrical energy conversion system can form an isolated power supply or a non-isolated power supply by applying a common or non-common to the input and output terminals. For a common transformer system, the isolated power supply is difficult to implement; and the semiconductor photoelectric power conversion system of the present invention is easy to implement due to its own characteristics.
在本发明的一个实施例中， 如图 15所示， 半导体光电电能转换系统在多个光电电能转 换模块 2之间设置多条输出端引线， 输出不同的输出电压， 适用于同时为多种不同工作电压 的设备供电的情况。  In an embodiment of the present invention, as shown in FIG. 15, the semiconductor photoelectric power conversion system is provided with a plurality of output terminal leads between the plurality of photoelectric power conversion modules 2, and outputs different output voltages, which are suitable for different types at the same time. The situation in which the operating voltage of the device is powered.
才艮据本发明实施例的半导体光电电能转换系统至少具有如下优点：  The semiconductor photoelectric power conversion system according to the embodiment of the present invention has at least the following advantages:
( 1 )该系统包括多个光电电能转换模块， 每个模块不仅可以自身实现 DC-DC电能转换， 还可以实现 DC-AC、 AC-DC或 AC-AC电能转换， 并通过灵活串并联连接以实现功率和 /或电压 扩展。  (1) The system includes a plurality of photoelectric power conversion modules, each of which can realize DC-DC power conversion by itself, DC-AC, AC-DC or AC-AC power conversion, and is connected by flexible series and parallel connection. Achieve power and / or voltage expansion.
( 2 )该系统中的光电电能转换模块和基板都为扁平形状， 比表面积大， 利于散热。  (2) The photoelectric power conversion module and the substrate in the system have a flat shape and a large specific surface area, which is advantageous for heat dissipation.
( 3 )该系统釆用对角线电极分布封装， 连线之间筒洁美观不交叉， 为组装工作带来便 利， 同时可以降低相邻光电电能转换模块之间的电压差， 增大电极之间的绝缘距离， 从而提 高绝缘特性， 能有效防止击穿。 (3) The system uses the diagonal electrode distribution package, and the connection between the wires is not beautiful, which is convenient for assembly work, and can reduce the voltage difference between adjacent photoelectric power conversion modules, and increase the electrode Insulation distance between High insulation properties, which can effectively prevent breakdown.
( 4 )该系统的输入电路提供一个固定的输入电压后， 在输出电路上可设多个抽头， 同 时输出不同的电压， 满足不同使用需求。  (4) After the input circuit of the system provides a fixed input voltage, multiple taps can be set on the output circuit, and different voltages can be output at the same time to meet different usage requirements.
在本说明书的描述中， 参考术语 "一个实施例"、 "一些实施例"、 "示例"、 "具体示 例"、 或 "一些示例" 等的描述意指结合该实施例或示例描述的具体特征、 结构、 材料或者 特点包含于本发明的至少一个实施例或示例中。在本说明书中， 对上述术语的示意性表述不 一定指的是相同的实施例或示例。 而且， 描述的具体特征、 结构、 材料或者特点可以在任何 的一个或多个实施例或示例中以合适的方式结合。  In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" and the like means a specific feature described in connection with the embodiment or example. A structure, material or feature is included in at least one embodiment or example of the invention. In the present specification, the schematic representation of the above terms does not necessarily mean the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.
尽管上面已经示出和描述了本发明的实施例， 可以理解的是， 上述实施例是示例性的， 不能理解为对本发明的限制，本领域的普通技术人员在不脱离本发明的原理和宗旨的情况下 在本发明的范围内可以对上述实施例进行变化、 修改、 替换和变型。  Although the embodiments of the present invention have been shown and described, it is understood that the foregoing embodiments are illustrative and not restrictive Variations, modifications, alterations and variations of the above-described embodiments are possible within the scope of the invention.

Claims

1、 一种半导体光电电能转换系统， 其特征在于， 包括： A semiconductor photoelectric power conversion system, comprising:
基板；  Substrate
多个光电电能转换模块， 所述多个光电电能转换模块之间相互串联和 /或并联， 以实现 电压和 /或功率的扩展， 其中， 所述光电电能转换模块进一步包括：  a plurality of photoelectric power conversion modules, wherein the plurality of photoelectric power conversion modules are connected in series and/or in parallel to each other to realize expansion of voltage and/or power, wherein the photoelectric power conversion module further comprises:
隔离层， 所述隔离层对所述光电电能转换模块的工作光线透明；  An isolation layer, wherein the isolation layer is transparent to the working light of the photoelectric power conversion module;
形成在所述隔离层之上的一个或多个的电光转换结构， 用于将输入电能转换为所 述工作光线发射； 和  Forming one or more electro-optical conversion structures over the isolation layer for converting input electrical energy into the operational light emission; and
形成在所述隔离层之上的一个或多个的光电转换结构， 用于将所述工作光线转换 为输出电能， 其中， 所述光电转换结构的吸收光语与所述电光转换结构发射光语之间 频谱匹配。  Forming one or more photoelectric conversion structures on the isolation layer for converting the working light into output electrical energy, wherein the absorption optical language of the photoelectric conversion structure and the electro-optical conversion structure emit optical language Match between the spectrum.
2、 如权利要求 1所述的半导体光电电能转换系统， 其特征在于， 所述光电电能转换模 块为 DC-DC型光电电能转换模块、 AC-AC型光电电能转换模块、 AC-DC型光电电能转换模块 或 DC-AC型光电电能转换模块。  2. The semiconductor photoelectric power conversion system according to claim 1, wherein the photoelectric power conversion module is a DC-DC type photoelectric power conversion module, an AC-AC type photoelectric energy conversion module, and an AC-DC type photoelectric energy source. Conversion module or DC-AC type photoelectric energy conversion module.
3、 如权利要求 1所述的半导体光电电能转换系统， 其特征在于， 所述光电电能转换模 块中， 所述电光转换结构包括发光二极管、 谐振发光二极管、 激光二极管、 量子点发光器件 或有机发光器件。  3. The semiconductor photoelectric power conversion system according to claim 1, wherein in the photoelectric power conversion module, the electro-optical conversion structure comprises a light emitting diode, a resonant light emitting diode, a laser diode, a quantum dot light emitting device or an organic light emitting device. Device.
4、 如权利要求 1所述的半导体光电电能转换系统， 其特征在于， 所述光电电能转换模 块中， 所述光电转换结构包括半导体光伏电池、 量子点光伏电池或有机材料光伏电池。  4. The semiconductor optoelectronic power conversion system according to claim 1, wherein in the photoelectric power conversion module, the photoelectric conversion structure comprises a semiconductor photovoltaic cell, a quantum dot photovoltaic cell or an organic material photovoltaic cell.
5、 如权利要求 1所述的半导体光电电能转换系统， 其特征在于， 所述光电电能转换模 块中， 所述隔离层为绝缘材料， 所述电光转换结构、 所述电光转换结构之间通过材料本身的 绝缘特性进行隔离；或者，所述隔离层为半导体材料，所述电光转换结构与所述隔离层之间、 所述光电转换结构与所述隔离层之间通过反偏 PN结结构进行隔离。  The semiconductor photoelectric power conversion system according to claim 1, wherein in the photoelectric power conversion module, the isolation layer is an insulating material, and the electro-optical conversion structure and the electro-optic conversion structure pass materials. Isolating the insulating property itself; or the isolating layer is a semiconductor material, and the electro-optical conversion structure and the isolating layer are separated from the isolating layer by a reverse bias PN junction structure .
6、 如权利要求 1-5任一项所述的半导体光电电能转换系统， 其特征在于， 所述光电电 能转换模块为扁平形状器件，并且所述光电电能转换模块的输入端和输出端呈对角线交叉分 布。  The semiconductor photoelectric power conversion system according to any one of claims 1 to 5, wherein the photoelectric power conversion module is a flat shape device, and the input end and the output end of the photoelectric power conversion module are paired The corners are distributed.
7、 如权利要求 1-5任一项所述的半导体光电电能转换系统， 其特征在于， 所述半导体 光电电能转换系统还包括：  The semiconductor photoelectric power conversion system according to any one of claims 1 to 5, wherein the semiconductor photoelectric power conversion system further comprises:
调节模块， 所述调节模块与所述多个光电电能转换模块的总输入端和总输出端相连， 用 于通过监测所述总输出端的工作参数， 反馈调节所述总输入端的工作参数。  And an adjustment module, wherein the adjustment module is connected to the total input end and the total output end of the plurality of photoelectric power conversion modules, and is configured to feedback and adjust the working parameters of the total input end by monitoring operating parameters of the total output end.
8、 如权利要求 6或 7所述的半导体光电电能转换系统， 其特征在于， 所述光电电能转 换模块中， 光线传播路径上的各层材料的折射系数匹配。 The semiconductor photoelectric power conversion system according to claim 6 or 7, wherein the photoelectric power conversion In the replacement module, the refractive index of each layer of material on the light propagation path matches.
9、 如权利要求 8所述的半导体光电电能转换系统， 其特征在于， 所述光电电能转换模 块中， 还包括光学陷阱， 所述光学陷阱用于将光线限制在所述光电电能转换模块内部。  9. The semiconductor optoelectronic power conversion system according to claim 8, wherein the photoelectric power conversion module further comprises an optical trap for limiting light to the inside of the photoelectric power conversion module.
10、如权利要求 1所述的半导体光电电能转换系统，其特征在于，所述隔离层包括 Α 1203 , A1N, Si02, MgO, Si3N4, BN, 金刚石， LiA102, LiGa02, GaAs, SiC, Ti02, Zr02, SrTi03, Ga203 , ZnS, SiC, MgAl204 , LiNb03, LiTa03, 钇铝石榴石（YAG)晶体， KNb03, LiF, MgF2, BaF2, GaF2, LaF3, BeO, GaP, GaN以及稀土氧化物 （ REO ) 中的一种及其组合。 10. The semiconductor optoelectronic power conversion system of claim 1 wherein said spacer layer comprises Α 1 2 0 3 , A1N, Si0 2 , MgO, Si 3 N 4 , BN, diamond, LiA10 2 , LiGa0 2 , GaAs, SiC, Ti0 2 , Zr0 2 , SrTi0 3 , Ga 2 0 3 , ZnS, SiC, MgAl 2 0 4 , LiNb0 3 , LiTa0 3 , yttrium aluminum garnet (YAG) crystal, KNb0 3 , LiF, MgF 2 , one of BaF 2 , GaF 2 , LaF 3 , BeO, GaP, GaN, and rare earth oxide (REO ), and combinations thereof.
PCT/CN2012/084416 2011-11-10 2012-11-09 Semiconductor photoelectric power conversion system WO2013067968A1 (en)

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