CN102427094A - Semiconductor direct current photoelectric transformer - Google Patents
Semiconductor direct current photoelectric transformer Download PDFInfo
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- CN102427094A CN102427094A CN2011103559998A CN201110355999A CN102427094A CN 102427094 A CN102427094 A CN 102427094A CN 2011103559998 A CN2011103559998 A CN 2011103559998A CN 201110355999 A CN201110355999 A CN 201110355999A CN 102427094 A CN102427094 A CN 102427094A
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Abstract
The invention provides a semiconductor direct current photoelectric transformer which comprises an isolating layer, a plurality of electrooptical conversion structures and a plurality of photoelectric conversion structures, wherein the electrooptical conversion structures are formed at one side of the isolating layer; the electrooptical conversion structures are mutually connected in series; each electrooptical conversion structure comprises a first electrode layer, an electrooptical conversion layer formed on the first electrode layer and a second electrode layer formed on the electrooptical conversion layer; the photoelectric conversion structures are formed at the other side of the isolating layer; the photoelectric conversion structures are mutually connected in series; each photoelectric conversion structure comprises a third electrode layer, a photoelectric conversion layer formed on the third electrode layer and a fourth electrode layer formed on the photoelectric conversion layer; and the isolating layer, the second electrode layer and the third electrode layer are transparent to working light rays emitted by the electrooptical conversion layer. The semiconductor direct current photoelectric transformer of the embodiment of the invention has the advantages of high-voltage resistance, no electromagnetic radiation, no coil structure, no influence by solar radiation, and the like.
Description
Technical field
The present invention relates to current/voltage transformation field, particularly a kind of semiconductor direct current opto-electronic transformers.
Background technology
In the daily use, traditional electric power carries the main alternating current that adopts to transmit, and mainly is because the alternating current transformation is easy, realizes the remote distance power transmission easily, and with the low-voltage distribution power transformation of user side.But adopt ac transmission to have very big defective: at first, the induction reactance effect that alternating current produces can not be ignored, and especially to high-frequency alternating current, its induction reactance effect can produce greatly influence to alternating current; Simultaneously, because the existence of skin effect makes that the effective area of alternating current transfer wire is less, can a large amount of electric energy of loss in the long distance power transmission process.Secondly, ac power line generally all is an overhead wire, and submerged cable and underground cable are also arranged, and alternating current " shunting " is caused in they and " shunt capacitance " that cable produces, causes the energy loss in the transmission of electricity process.And in the ac transmission process, whole electrical network needs synchronous operation, and all electricity generation systems will to guarantee power grid operation, exchange the Phase synchronization difficulty synchronously in same phase place, and the variation of an electricity generation system will influence the stable of whole electrical network.In addition, in small-power electronics product was used, traditional dc low-voltage becomes high direct voltage often need become AC low-tension earlier; Become ac high-voltage with coil transformer again, become the method for high direct voltage again, this method complicated circuit; Element is many, and volume is big, and cost height and conversion efficiency are low.
Compare with ac transmission, direct current transportation has plurality of advantages:
1, the circuit cost is low: for overhead transmission line, the direct current one pole only needs one, and two of bipolar need are more economical.Every lead can move as an independent loop simultaneously, and can adopt the earth or seawater to do the loop.
2, loss is little: DC line does not have reactive loss, does not have charge power and charging current, and the direct current overhead transmission line does not have skin effect, and its corona loss is all little than exchanging overhead transmission line with radio interference.And cable line can move under higher electric potential gradient.
3, operation of power networks is more stable: itself has modulation function direct current, can react according to the requirement of system, moves more stable.Can get in touch with the AC system of two different frequencies, the power on the interconnection is easy to control.
But present direct current transportation is a direct current in this link of transmission of electricity only, and generating is still interchange.In the origin or beginning of transmission line converter being arranged is direct current with exchange conversion, becomes direct current again interchange again to line end.Present this converter manufacturing difficulty, cost an arm and a leg, so the direct current transportation range of application of present stage mainly is confined to remote large capacity transmission and submarine cable transmission of electricity etc., greatly limited the application of direct current transportation.For making direct current transportation obtain widespread usage, development direct current transformation technology is the key issue that needs to be resolved hurrily with development direct current transformation device.
Summary of the invention
The object of the invention is intended to solve at least one of above-mentioned technological deficiency, particularly proposes a kind of semiconductor direct current opto-electronic transformers.
The present invention provides a kind of semiconductor direct current opto-electronic transformers, comprising: separator; Be formed on a plurality of electric light transformational structures of said separator one side, at least a portion in said a plurality of electric light transformational structures is connected each other, and each electric light transformational structure comprises: first electrode layer; Be formed on the electric light conversion layer on said first electrode layer; Be formed on the second electrode lay on the said electric light conversion layer; Be formed on a plurality of opto-electronic conversion structures of said separator opposite side, at least a portion in said a plurality of opto-electronic conversion structures is connected each other, and each opto-electronic conversion structure comprises: the third electrode layer; Be formed on the photoelectric conversion layer on the said third electrode layer; Be formed on the 4th electrode layer on the said photoelectric conversion layer; Wherein, said separator, said the second electrode lay and said third electrode layer are transparent to the work light that said electric light conversion layer sends.
Semiconductor direct current opto-electronic transformers also comprises: first reflector between said first electrode layer and said electric light conversion layer according to an embodiment of the invention; And second reflector between said the 4th electrode layer and said photoelectric conversion layer.Said first and second reflector light of will working is limited between said electric light conversion layer and the said photoelectric conversion layer and comes back reflective, prevents that light from revealing, and improves light wave transmissions efficient.
Commutator transformer according to an embodiment of the invention, said first reflector and second reflector are Bragg mirror or metal completely reflecting mirror.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, said first electrode layer and said the 4th electrode layer are metal electrode.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, said insolated layer materials is Al
2O
3, AlN, SiO
2, MgO, Si
3N
4, BN, diamond, LiAlO
2, LiGaO
2, semi-insulated GaAs, SiC or GaP, a kind of and combination among the GaN, and rare earth oxide REO and combination thereof, so that said separator is transparent to said work light, insulation characterisitic is good, high pressure resistant anti-puncture.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, the material refraction coefficient echelon of said electric light conversion layer, said the second electrode lay, said separator, said third electrode layer and said photoelectric conversion layer increases.The implication of said " echelon increase " is: the material refraction coefficient that does not require each said layer all progressively increases with respect to its previous said layer; Material refraction coefficient of some said layer can be identical with its previous said layer, and promptly the material refraction coefficient integral body of said each layer is and increases progressively trend and get final product.Avoid light when said photoelectric conversion layer direction is transmitted, (to comprise the light of said electric light conversion layer generation and the light of said each electrode layer and each reflective layer reflects) on the one hand total reflection takes place, to improve the efficiency of transmission of light along said electric light conversion coating; Impel light (mainly comprising third and fourth electrode of said photoelectric conversion layer and the light of second reflective layer reflects) when the said electric light conversion layer of said opto-electronic conversion course direction is transmitted that emission entirely takes place on the other hand; So that more light is limited in the photoelectricity conversion coating, convert electric efficient into thereby improve light.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, the material refraction coefficient of said electric light conversion layer, said the second electrode lay, said separator, said third electrode layer and said photoelectric conversion layer is approaching.Inner layers of material is preferably the identical or close material of refraction coefficient to reduce reflection of light and loss.Semiconductor direct current opto-electronic transformers according to an embodiment of the invention; In said electric light conversion layer, said the second electrode lay, said separator, said third electrode layer and the said photoelectric conversion layer at least one has roughened surface or photon crystal structure; To increase light transmission, reduce the total reflection of light.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention; The photon energy of the work light that the energy gap corresponding energy of said the second electrode lay, said separator and said third electrode layer material is sent greater than said electric light conversion layer; To prevent the absorption of said the second electrode lay, said separator and said third electrode layer, improve light wave transmissions efficient to said work light.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, said photoelectric conversion layer is LED structure or laser structure, wherein, said LED structure comprises resonance LED structure.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention; The material of said electric light conversion layer comprises the AlGaInP of reddish yellow light; The InGaN of the GaN of ultraviolet and InGaN, royal purple light and AlGaInN, ZnO, the AlGaInAs of ruddiness or infrared light, GaAS, InGaAs and other III family compound nitrogen series, the As of III family system or phosphorus series compound semi-conducting material and combination thereof.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, the material of said photoelectric conversion layer comprises AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, InGaP, other III-V family direct energy-gap semiconductor material and combination thereof.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention; The band structure of said electric light conversion layer and said photoelectric conversion layer is complementary so that the wave band of the work light that said electric light conversion layer sends and the highest wave band of said photoelectric conversion layer absorption efficiency are complementary, to reach the highest light-wave energy efficiency of transmission.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention; Said the second electrode lay and said third electrode layer are heavily doped semi-conducting material GaAs, GaN, GaP; AlGaInP, AlGaInN, AlGaInAs, perhaps conductive, transparent metal oxide materials ITO, SnO
2, ZnO and combination thereof.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention; Be filled with the reflective medium material between said a plurality of electric light transformational structure; And be filled with the reflective medium material between said a plurality of opto-electronic conversion structures; So that work light is limited in the layer of being propagated, prevent the light leakage, increase conversion efficiency.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, wherein, a said electric light transformational structure comprises the electrooptic switching element of a plurality of parallel connections, or said opto-electronic conversion structure comprises the photoelectric conversion unit of a plurality of parallel connections.Through this with photoelectricity and/or electrooptic switching element elder generation parallel connection series system again, with the influence of the resistance that reduces said the second electrode lay and third electrode layer, thus the reduction energy loss.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention; The electric light transformational structure and the opto-electronic conversion structure that comprise the multilayer alternated in vertical direction; Comprise separator between every adjacent electric light transformational structure and the opto-electronic conversion structure, this structure can further improve the direct voltage transformation ratio.In this structure; First electrode layer and the 4th electrode layer of middle each electric light transformational structure and opto-electronic conversion structure can be heavily doped semi-conducting material GaAs, GaN, GaP; AlGaInP, AlGaInN, AlGaInAs, perhaps conductive, transparent metal oxide materials ITO, SnO
2, ZnO and combination thereof.
The present invention provides a kind of semiconductor direct current opto-electronic transformers; Input through in semiconductor direct current opto-electronic transformers is provided with the electric light conversion layer; The light radiation that utilizes the semiconductor electronic transition between the energy levels to produce; Converting direct current into light transmits; Photoelectric conversion layer is set with phototransformation to be direct current output at output; The voltage of input and output unit cell depends on electric light conversion layer and the photoelectric conversion layer properties of materials parameter in the opto-electronic conversion structure in its electric light transformational structure respectively, adopts the electric light transformational structure and the series connection of opto-electronic conversion structure of varying number respectively at input and output, utilizes the transformation of the number of electric light transformational structure and opto-electronic conversion structure than the realization direct voltage.This semiconductor direct current opto-electronic transformers also has high pressure resistant, electromagnetic-radiation-free, advantage such as no loop construction does not receive the influence of solar radiation and solar windstorm etc., and safe and reliable, volume is little, and the life-span is long, and is in light weight, convenient for installation and maintenance.
Aspect that the present invention adds and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously with easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 is the fundamental diagram of the semiconductor direct current opto-electronic transformers of the embodiment of the invention;
Fig. 2 is the structural representation of the semiconductor direct current opto-electronic transformers of the embodiment of the invention;
Fig. 3 is the wiring cutaway view of the semiconductor direct current opto-electronic transformers structure of the embodiment of the invention;
Fig. 4 is the wiring vertical view of the semiconductor direct current opto-electronic transformers structure of the embodiment of the invention;
Fig. 5 is the structural representation of the semiconductor direct current opto-electronic transformers that comprises a plurality of parallelly connected photoelectric conversion units and a plurality of parallelly connected electrooptic switching elements of the embodiment of the invention;
Fig. 6 is the structural representation of the semiconductor direct current opto-electronic transformers of the electric light transformational structure that comprises the multilayer alternated in vertical direction and opto-electronic conversion structure.
Embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Be exemplary through the embodiment that is described with reference to the drawings below, only be used to explain the present invention, and can not be interpreted as limitation of the present invention.
Disclosing of hereinafter provides many various embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts and the setting of specific examples are described.Certainly, they only are example, and purpose does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and purpose clearly, itself not indicate the relation between various embodiment that discuss of institute and/or the setting.In addition, various specific technology and the examples of material that the invention provides, but those of ordinary skills can recognize the property of can be applicable to of other technologies and/or the use of other materials.In addition; First characteristic of below describing second characteristic it " on " structure can comprise that first and second characteristics form the embodiment of direct contact; Can comprise that also additional features is formed on the embodiment between first and second characteristics, such first and second characteristics possibly not be direct contacts.
The present invention provides a kind of semiconductor direct current opto-electronic transformers, and its operation principle is as shown in Figure 1, passes through on the one hand at input input direct voltage V1; In electro-optical conversioning device, to inject the compound generation photon of charge carrier; Photon penetrated separator and transferred to the photonic layer conversion layer, produced different charge carriers in electrooptical device, to excite, and separated through internal electric field; Output dc voltage V2, thus utilize light wave to realize power transfer and transformation.On the other hand, through the electric light transformational structure and the opto-electronic conversion structure of the different numbers of connecting respectively at input and output, the number of utilizing electric light transformational structure and opto-electronic conversion structure is than realizing direct current transformation.For example, suppose that the electric light transformational structure is m, the opto-electronic conversion structure is n, then output voltage/input voltage=(n*V2)/(m*V1).
Shown in Figure 2 is structural representation according to the semiconductor direct current opto-electronic transformers of the embodiment of the invention, and shown in Figure 3 is wiring cutaway view according to the semiconductor direct current opto-electronic transformers structure of the embodiment of the invention, and shown in Figure 4 is the pairing wiring vertical view of Fig. 3.As shown in Figure 2, this commutator transformer comprises: separator 106; Be formed on a plurality of electric light transformational structures 1 of separator 106 1 sides, at least a portion in said a plurality of electric light transformational structures 1 is connected each other, and each electric light transformational structure 1 comprises: first electrode layer 100; Be formed on the electric light conversion layer 102 on first electrode layer 100; Be formed on the second electrode lay 104 on the electric light conversion layer 102; Be formed on a plurality of opto-electronic conversion structures 2 of separator 106 opposite sides, at least a portion in said a plurality of opto-electronic conversion structures 2 is connected each other, and each opto-electronic conversion structure 2 comprises: third electrode layer 108; Be formed on the photoelectric conversion layer 110 on the third electrode layer 108; Be formed on the 4th electrode layer 112 on the photoelectric conversion layer 110.In embodiments of the present invention; Connect through lead A respectively between a plurality of electric light transformational structures 1, between a plurality of opto-electronic conversion structure 2; Said a plurality of electric light transformational structure 1 is drawn input I1 and I2 respectively in the series connection back each other in two ends; Said a plurality of opto-electronic conversion structure 2 is drawn output O1 and O2 respectively in two ends in the series connection back each other, like Fig. 3 and shown in Figure 4.
Wherein, electric light conversion layer 102 converts light in order to the direct current with input, sends the work light of necessary wavelength scope.The combination of the one or more wave bands work light comprises from the ultraviolet light of 100nm to the overall optical spectral limit of the infrared light of 10um; Be preferably unifrequent light; The purple light of the blue light of the ruddiness of 620nm, 460nm, 380nm for example is to help using ripe prior art to make the electric light conversion layer.For example electric light conversion layer 102 can adopt the structure and material with high-quantum efficiency, high electro-optical efficiency.Particularly, can generally comprise active layer for LED structure or laser structure; Limiting layer, electric current dispersion layer, structures such as PN junction; Wherein active layer can be multi-quantum pit structure, and the electric light conversion layer of laser structure also comprises resonant cavity, and the LED structure comprises resonance LED structure.The material of electric light conversion layer 102 is selected based on material self-characteristic (like defect concentration, band structure etc.) and needed light wave characteristic (like wave-length coverage); For example can adopt the AlGaInP of reddish yellow light; The AlGaInAs of the InGaN of the GaN of ultraviolet and InGaN, royal purple light and AlGaInN, ZnO, ruddiness or infrared light, GaAS, InGaAs and other III family compound nitrogen series, the As of III family system or phosphorus series compound semi-conducting material and combination thereof; The material that wherein defect concentration is low, light conversion efficiency is high (like AlGaInP, InGaN, GaN) is preferred material.
Wherein, photoelectric conversion layer 110 is in order to convert light into electricity to realize transformation.The material of photoelectric conversion layer 110 comprises AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, InGaP, other III-V family direct energy-gap semiconductor material and combination thereof.Electric light conversion layer 102 generally can be selected the direct energy-gap semiconductor material for use; The band structure of its band structure and photoelectric conversion layer 110 is complementary so that the wave band of the work light that electric light conversion layer 102 sends and the highest wave band of photoelectric conversion layer 110 absorption efficiencies are complementary, to reach the highest light-wave energy conversion efficiency.
Wherein, the work light that sends of separator 106, the second electrode lay 104 and 108 pairs of electric light conversion layer 102 of third electrode layer is transparent.In embodiments of the present invention; The photon energy of the work light that the energy gap corresponding energy of the second electrode lay 104, separator 106 and third electrode layer 108 material is sent greater than electric light conversion layer 102; To prevent the absorption of the second electrode lay 104,106 layers of isolation and 108 pairs of said work light of third electrode layer, improve the light wave conversion efficiency.
In addition, the material refraction coefficient of the material refraction coefficient of separator 106, the second electrode lay 104 and third electrode layer 108 and electric light conversion layer 102 and photoelectric conversion layer 110 coupling is to avoid in light communication process total reflection taking place at the interface.Total reflection takes place in light when the bigger material of refraction coefficient gets into the refraction coefficient materials with smaller because and if only if; So in preferred embodiment of the present invention; The material refraction coefficient of the second electrode lay 104, separator 106, third electrode layer 108 and photoelectric conversion layer 110 is identical, full emission takes place at the interface to avoid light when electric light conversion layer 102 transfers to photoelectric conversion layer 110 at each; In preferred embodiment of the present invention, the material refraction coefficient echelon of the second electrode lay 104, separator 106, third electrode layer 108 and photoelectric conversion layer 110 increases.The implication of said " echelon increase " is: the material refraction coefficient of each said layer is not less than the material refraction coefficient of its previous said layer; The material refraction coefficient that is some said layer can be identical with its previous said layer, but the material refraction coefficient integral body of said each layer is and increases progressively trend; In preferred embodiment of the present invention, the material refraction coefficient of the second electrode lay 104, separator 106, third electrode layer 108 and photoelectric conversion layer 110 increases gradually.In another embodiment, the material refraction coefficient of the second electrode lay 104, separator 106, third electrode layer 108 and photoelectric conversion layer 110 is approaching.Through above-mentioned each embodiment; Avoid light when photoelectric conversion layer 110 directions are transmitted, (to comprise the light of electric light conversion layer 102 generations and the light of said each electrode layer and each reflective layer reflects) on the one hand total reflection takes place, to improve the efficiency of transmission of light along electric light conversion coating 102; Impel light when electric light conversion layer 102 directions are transmitted, (mainly to comprise third and fourth electrode of photoelectric conversion layer 110 and the light of second reflective layer reflects) on the other hand emission entirely takes place from photoelectric conversion layer 110; So that more light is limited in the photoelectricity conversion coating 110, convert electric efficient into thereby improve light.
In addition, the present invention's figure such as photon crystal structure through roughening or rule at the interface that can also be employed in different material layer waits and lowers total reflection.So in the preferred embodiment of the invention, at least one in electric light conversion layer 102, the second electrode lay 104, separator 106, third electrode layer 108 and the photoelectric conversion layer 110 has roughened surface,, reduce the total reflection of light to increase light transmission.
In preferred embodiment of the present invention, also comprise between first electrode layer 100 and the electric light conversion layer 102 between first reflector, 101, the four electrode layers 112 and the photoelectric conversion layer 110 also comprising second reflector 111, as shown in Figure 2.Said first and second reflector are limited in light between electric light conversion layer 102 and the photoelectric conversion layer 110 comes back reflective, reveals to prevent light, improves light wave transmissions efficient.The material require in reflector satisfies, requirements such as material property stable, interface contact resistance low, good conductivity high to work light reflection efficiency; Specifically can realize through following dual mode: a kind of is the Bragg mirror structure; Utilize multilayer refractive index material different layer to realize reflection; Such as the material that adopts two kinds of different refractivities, for example 0.6 the GaAs that differs of refractive index and AlAs, refractive index differ 2.2 Si and rare earth oxide REO) process sandwich construction and reflect realizing; A kind of is metal completely reflecting mirror structure, and directly the metal of deposit high conductivity and thermal conductivity is realized reflection, for example Ag, Au, Cu, Ni, Al, Sn, Co, W and combination thereof etc.Since thicker with the thickness of the contacted dorsum electrode layer in reflector (i.e. first electrode layer 100 and the 4th electrode layer 112), so the reflector adopts metal completely reflecting mirror structure to have the function of heat radiation simultaneously concurrently, can the inner heat that produces of transformer be conducted out.
Wherein, First electrode layer 100 and the 4th electrode layer 112 are used as extraction electrode with the input and output electric current; Because need be not transparent to work light; So can adopt materials such as metal, alloy, pottery, glass, plastics, conductive oxide to form individual layer and/or multi-layer compound structure, wherein be preferably the metal of low-resistivity, for example Cu.Preferably, the thickness that can pass through to increase metal electrode layer plays heat sink work in order to heat radiation simultaneously to reduce resistance.
Wherein, Be filled with reflective medium material (not shown among Fig. 2 and Fig. 3) between a plurality of electric light transformational structures 1; And be filled with reflective medium material (not shown among Fig. 2 and Fig. 3) between a plurality of opto-electronic conversion structures 2, so that work light is limited in the layer of being propagated, prevent the light leakage; Increase conversion efficiency, play the effect that electric insulation is isolated simultaneously.
When through-put power bigger and when causing the cellar area of single electric light transformational structure 1 and/or single opto-electronic conversion structure 2 bigger; Because the resistivity of heavily-doped semiconductor material that the second electrode lay 104 and third electrode layer 108 are used or ITO etc. is all higher; So the long meeting of electrode layer length causes bigger resistance; Produce big energy consumption, to this situation, the embodiment of the invention proposes semiconductor direct current opto-electronic transformers structure as shown in Figure 5; Be about to bigger single electric light transformational structure 1 and be divided into a plurality of less electrooptic switching elements; Utilize the metal electrooptic switching element parallel connection (shown in frame of broken lines among Fig. 5) that these are less of low-resistivity again, and then connect with other electric light transformational structure 1, its syndeton and method can adopt multilayer interconnect structure in the IC technology.Can in like manner realize with reference to electric light transformational structure 1 for opto-electronic conversion structure 2.Through this photoelectricity (electric light) converting unit elder generation parallel connection series system again can be reduced the influence of the resistance of the second electrode lay and third electrode layer, thus the reduction energy loss.
In one embodiment of the invention; This semiconductor direct current opto-electronic transformers can also comprise the electric light transformational structure 1 and opto-electronic conversion structure 2 of multilayer alternated in vertical direction; Comprise separator 106 between every adjacent electric light transformational structure 1 and the opto-electronic conversion structure 2, with further raising direct voltage transformation ratio.Wherein, multilayer electric light transformational structure 1 (or Heterolamellar photovoltaic transformational structure 2) is series connection each other, and the structure of every layer of electric light transformational structure 1 (or every layer of opto-electronic conversion structure 2) can be with reference to the described structure of the foregoing description.Shown in Figure 6 for having the semiconductor direct current opto-electronic transformers structural representation of two-layer electric light transformational structure 1 and one deck opto-electronic conversion structure 2 in vertical direction.Be pointed out that; In this structure; Except that electric light (or photoelectricity) transformational structure of the first floor and end layer, first electrode layer and the 4th electrode layer of middle each electric light transformational structure and opto-electronic conversion structure can not be selected metal electrode for use, and select heavily doped semi-conducting material GaAs, GaN, the GaP identical with the third electrode layer with second for use; AlGaInP, AlGaInN, AlGaInAs, perhaps conductive, transparent metal oxide materials ITO, SnO
2, ZnO and combination thereof, thereby help light ray propagation.
The present invention provides a kind of semiconductor direct current opto-electronic transformers; On the one hand because the input threshold voltage of this semiconductor direct current opto-electronic transformers individual unit and the material characteristic parameter that output voltage is decided by photoelectric conversion layer and electric light conversion layer; Like material category, emergent property, energy gap, doping content etc., so through regulating corresponding characterisitic parameter to realize transformation; Through the electric light transformational structure and the opto-electronic conversion structure of the different numbers of connecting respectively at input and output, the number of utilizing electric light transformational structure and opto-electronic conversion structure is than realizing direct current transformation on the other hand.
Although illustrated and described embodiments of the invention; For those of ordinary skill in the art; Be appreciated that under the situation that does not break away from principle of the present invention and spirit and can carry out multiple variation, modification, replacement and modification that scope of the present invention is accompanying claims and be equal to and limit to these embodiment.
Claims (17)
1. a semiconductor direct current opto-electronic transformers is characterized in that, comprising:
Separator;
Be formed on a plurality of electric light transformational structures of said separator one side, at least a portion in said a plurality of electric light transformational structures is connected each other, and each electric light transformational structure comprises:
First electrode layer;
Be formed on the electric light conversion layer on said first electrode layer;
Be formed on the second electrode lay on the said electric light conversion layer;
Be formed on a plurality of opto-electronic conversion structures of said separator opposite side, at least a portion in said a plurality of opto-electronic conversion structures is connected each other, and each opto-electronic conversion structure comprises:
The third electrode layer;
Be formed on the photoelectric conversion layer on the said third electrode layer;
Be formed on the 4th electrode layer on the said photoelectric conversion layer;
Wherein, said separator, said the second electrode lay and said third electrode layer are transparent to the work light that said electric light conversion layer sends.
2. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, also comprises:
First reflector between said first electrode layer and said electric light conversion layer; And
Second reflector between said the 4th electrode layer and said photoelectric conversion layer.
3. semiconductor direct current opto-electronic transformers as claimed in claim 2 is characterized in that, said first reflector and second reflector are Bragg mirror or metal completely reflecting mirror.
4. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, said first electrode layer and said the 4th electrode layer are metal electrode.
5. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that said separator is Al
2O
3, AlN, SiO
2, MgO, Si
3N
4, BN, diamond, LiAlO
2, LiGaO
2, semi-insulated GaAs, SiC or GaP, a kind of and combination among the GaN, and rare earth oxide REO and combination thereof.
6. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, the material refraction coefficient echelon of said electric light conversion layer, said the second electrode lay, said separator, said third electrode layer and said photoelectric conversion layer increases.
7. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that the material refraction coefficient of said electric light conversion layer, said the second electrode lay, said separator, said third electrode layer and said photoelectric conversion layer is approaching.
8. semiconductor direct current opto-electronic transformers as claimed in claim 1; It is characterized in that at least one in said electric light conversion layer, said the second electrode lay, said separator, said third electrode layer and the said photoelectric conversion layer has roughened surface or photon crystal structure.
9. semiconductor direct current opto-electronic transformers as claimed in claim 1; It is characterized in that the photon energy of the work light that the energy gap corresponding energy of said the second electrode lay, said separator and said third electrode layer material is sent greater than said electric light conversion layer.
10. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that said photoelectric conversion layer is LED structure, laser structure, and wherein, said LED structure comprises resonance LED structure.
11. semiconductor direct current opto-electronic transformers as claimed in claim 1; It is characterized in that; The material of said electric light conversion layer comprises the AlGaInP of reddish yellow light; The InGaN of the GaN of ultraviolet and InGaN, royal purple light and AlGaInN, ZnO, the AlGaInAs of ruddiness or infrared light, GaAS, InGaAs and other III family compound nitrogen series, arsenic system of III family or phosphorus series compound semi-conducting material and combination thereof.
12. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that the material of said photoelectric conversion layer comprises AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, InGaP, other III-V family direct energy-gap semiconductor material and combination thereof.
13. semiconductor direct current opto-electronic transformers as claimed in claim 1; It is characterized in that the band structure of said electric light conversion layer and said photoelectric conversion layer is complementary so that the wave band of the work light that said electric light conversion layer sends and the highest wave band of said photoelectric conversion layer absorption efficiency are complementary.
14. semiconductor direct current opto-electronic transformers as claimed in claim 1; It is characterized in that; Said the second electrode lay and said third electrode layer are heavily doped semi-conducting material GaAs, GaN, GaP, AlGaInP, AlGaInN, AlGaInAs, perhaps conductive, transparent metal oxide materials ITO, SnO
2, ZnO and combination thereof.
15. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, is filled with the reflective medium material between said a plurality of electric light transformational structures, and is filled with the reflective medium material between said a plurality of opto-electronic conversion structures.
16. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that a said electric light transformational structure comprises the electrooptic switching element of a plurality of parallel connections, or said opto-electronic conversion structure comprises the photoelectric conversion unit of a plurality of parallel connections.
17. like each described semiconductor direct current opto-electronic transformers of claim 1-16; It is characterized in that; The said electric light transformational structure and the opto-electronic conversion structure that comprise the multilayer alternated in vertical direction comprise separator between every adjacent electric light transformational structure and the opto-electronic conversion structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110355999 CN102427094B (en) | 2011-11-10 | 2011-11-10 | Semiconductor direct current photoelectric transformer |
| EP12775116.2A EP2748862A4 (en) | 2011-11-10 | 2012-05-11 | Semiconductor dc transformer |
| US13/643,889 US9391226B2 (en) | 2011-11-10 | 2012-05-11 | Semiconductor DC transformer |
| PCT/CN2012/075393 WO2013067805A1 (en) | 2011-11-10 | 2012-05-11 | Semiconductor dc transformer |
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| CN 201110355999 CN102427094B (en) | 2011-11-10 | 2011-11-10 | Semiconductor direct current photoelectric transformer |
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| CN102427094B CN102427094B (en) | 2013-08-28 |
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