CN103378086B - A kind of chip with semiconductor direct current variable pressure structure - Google Patents
A kind of chip with semiconductor direct current variable pressure structure Download PDFInfo
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- CN103378086B CN103378086B CN201210123075.XA CN201210123075A CN103378086B CN 103378086 B CN103378086 B CN 103378086B CN 201210123075 A CN201210123075 A CN 201210123075A CN 103378086 B CN103378086 B CN 103378086B
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention provides a kind of chip, this chip comprises: substrate; Be formed at least one semiconductor direct current variable pressure structure of substrate, comprise: at least one semi-conductor electricity optical conversion element, for input electric energy is converted to luminous energy; With at least one semiconductor optoelectronic converting unit, for by transform light energy for export electric energy, wherein, the number of semiconductor optoelectronic converting unit and the number of semi-conductor electricity optical conversion element proportional to realize direct current transformation, and the working light frequency spectrum of semi-conductor electricity optical conversion element and semiconductor optoelectronic converting unit matches.The function of direct current transformation can be realized according to the chip of the embodiment of the present invention, there is structure simple, can the integrated advantage of full sheet.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a chip with a semiconductor direct current voltage transformation structure.
Background
With the continuous development of semiconductor technology, on one hand, the integrated circuit chip has a larger scale and a higher integration level, and various circuits and even functional modules are integrated on the same chip, such as a radio frequency circuit, an analog circuit, a digital circuit, various MEMS (micro electro mechanical system) devices, a flash memory, etc., which require different operating voltages, for example, the voltage of the digital circuit is about 1V, the flash memory requires a high write-in voltage, some sensing devices may require operating voltages of tens of V or even hundreds of V, and even circuit modules of the same voltage may affect each other through power lines, such as noise, distortion, etc.; on the other hand, the critical size of the device is smaller and smaller, the working voltage is lower and lower, and the power consumption of the chip is increased continuously, so that the working current of the power supply is increased linearly, and the IR loss is larger and larger under the influence of the series resistance of the interconnection lines on the chip. These all put higher demands on the performance of the power supply system of the chip.
The current technology usually introduces a plurality of different voltage sources directly from the outside. This method has the following disadvantages:
1. a large number of off-chip power supply devices are needed, the cost is high, the interference is easy to happen, and the power consumption and power supply management are complex;
2. the multiple groups of power interfaces require a large number of on-chip input/output buffers for routing chip bonding pads, occupy a large area and require a large number of bonding wires;
3. when introducing low pressure heavy current from the outside, the voltage drop loss on chip interconnect resistance is very big to need a large amount of remote power to walk the line, occupied a large amount of chip areas, be unfavorable for the heat dissipation, also do not benefit the miniaturization of chip and the reduction of cost in addition.
Therefore, a direct current transformation technology and an on-chip direct current transformation device are developed, so that a multi-voltage power supply scheme integrated on an integrated circuit chip is realized, and on-chip transformation, especially boosting is a key problem to be solved urgently.
Disclosure of Invention
The present invention is directed to at least one of the above-mentioned drawbacks, and more particularly to a chip that is small in size, has low voltage drop loss, and can be fully integrated.
The invention provides a chip with a semiconductor direct current transformation structure, which comprises: a substrate; at least one semiconductor DC transformer structure formed over a substrate, comprising: at least one semiconductor electro-optical conversion unit for converting input electric energy into optical energy; and at least one semiconductor photoelectric conversion unit for converting light energy into output electric energy, wherein the number of the semiconductor photoelectric conversion units is in a certain proportion to the number of the semiconductor photoelectric conversion units so as to realize direct current voltage transformation, and the working light frequency spectrums of the semiconductor photoelectric conversion units are matched with that of the semiconductor photoelectric conversion units.
According to the chip with the semiconductor direct-current transformation structure, in the semiconductor direct-current transformation structure, the semiconductor electro-optical conversion unit is arranged at the input end to convert direct current into light for transmission, the semiconductor photoelectric conversion unit is arranged at the output end to convert the light into direct current for output, different numbers of semiconductor electro-optical conversion units and different numbers of semiconductor photoelectric conversion units are respectively adopted at the input end and the output end to be connected in series, the direct-current voltage transformation is realized by utilizing the working voltage difference and the number proportion of the semiconductor electro-optical conversion units and the semiconductor photoelectric conversion units, and then the chip is connected with a load circuit through the power supply pins. The chip has the direct current voltage transformation function, has no electromagnetic radiation, has no coil structure, is safe and reliable, small in size, long in service life and light in weight, and each output module is independent from each other and is not influenced in isolation.
In one embodiment of the present invention, the chip further comprises: the photoelectric conversion device comprises an isolation layer, wherein at least one semiconductor photoelectric conversion unit is formed on one side of the isolation layer, each semiconductor photoelectric conversion unit comprises an photoelectric conversion layer, at least one semiconductor photoelectric conversion unit is formed on the other side of the isolation layer, each semiconductor photoelectric conversion unit comprises a photoelectric conversion layer, the isolation layer is transparent to working light emitted by the photoelectric conversion layer, and the working light is transmitted in a transmission mode.
In one embodiment of the present invention, the chip further comprises: the isolation layer, have the reflection of light structure in the isolation layer, wherein, at least one semiconductor photoelectric conversion unit and at least one semiconductor photoelectric conversion unit form in the isolation layer with one side and be the interval and arrange, wherein, every semiconductor photoelectric conversion unit includes the photoelectric conversion layer, every photoelectric conversion unit includes the photoelectric conversion layer, the isolation layer is transparent to the working light that the photoelectric conversion layer sent, the reflection of light structure is used for with working light from the photoelectric conversion layer reflection to the photoelectric conversion layer.
In one embodiment of the present invention, the materials of the semiconductor electro-optical conversion unit, the spacer, and the semiconductor photoelectric conversion unit have similar refractive indices.
In one embodiment of the present invention, the refractive indices of the materials of the semiconductor electro-optical conversion unit, the spacer, and the semiconductor photoelectric conversion unit are increased incrementally.
In one embodiment of the present invention, at least one of the semiconductor electro-optical conversion unit, the isolation layer, and the semiconductor photoelectric conversion unit has a roughened surface, a patterned surface, or a photonic crystal structure.
In one embodiment of the present invention, the material of the isolation layer is solid transparent insulating or semi-insulating Al2O3、Y2O3、Gd2O3、AlN、SiO2、MgO、CaO、Si3N4BN, diamond, LiAlO2、LiGaO2、GaAs、SiC、TiO2、ZrO2、SrTiO3、Ga2O3、ZnS、ZnSe，CdTe、SiC、MgAl2O4、LiNbO3、LiTaO3、Y3AI5O12、KNbO3、LiF、MgF2、BaF2、GaF2、LaF3BeO, GaP, GaN, and rare earth oxides, and combinations thereof. Preferably, IC integrated circuit technology can be adoptedSiO commonly used in2，Si3N4
In one embodiment of the invention, the material of the electro-optic conversion layer is one of AlGaInP, GaN, InGaNInGaN, AlGaInN, ZnO, AlGaInAs, GaAS, InGaAs, InGaAsP, AlGaAs, or InGaAsNSb, and a combination thereof.
In an embodiment of the invention, the material of the photoelectric conversion layer is one of Si, Ge, SiGe, AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, or InGaAsNSb, and a combination thereof.
In one embodiment of the present invention, the electrode layer on the transmission path of the working light is made of transparent conductive material GaAs, GaN, AlGaInP, AlGaInN, AlGaInAs, ITO, SnO2One of ZnO or graphene, and combinations thereof.
In one embodiment of the invention, transparent insulating media are filled between the semiconductor electro-optical conversion units, between the semiconductor photoelectric conversion units, or between the semiconductor electro-optical conversion units and the semiconductor photoelectric conversion units, and the top of the transparent insulating media is covered with a light reflecting layer; or the reflective insulating medium is filled between the semiconductor electro-optical conversion units, between the semiconductor photoelectric conversion units, or between the semiconductor electro-optical conversion units and the semiconductor photoelectric conversion units.
In one embodiment of the present invention, the chip further comprises: and the light trapping structure is used for limiting the working light rays in the semiconductor direct current transformation structure, so that the energy loss caused by light loss is reduced.
In one embodiment of the present invention, the chip further comprises: one or more power supply pins connected with an external power supply; the on-chip power distribution network is connected with the power supply pins and the at least one semiconductor direct-current transformation structure; and each circuit functional module is connected with at least one semiconductor direct current transformation structure, wherein the input end of each semiconductor direct current transformation structure is connected with the power distribution network in the chip, and the output end of each semiconductor direct current transformation structure is connected with the circuit functional module which needs to supply power on the chip.
In one embodiment of the present invention, the chip further comprises: and the control module is connected with the at least one semiconductor direct current transformation structure and controls the semiconductor direct current transformation structure.
In one embodiment of the invention, the chip is fully integrated on chip, and the substrate is made of Si, SiGe, GaAs, InP, SiC, Al2O3Or a flexible material.
In one embodiment of the invention, the chip comprises a plurality of semiconductor direct current transformation structures, wherein the plurality of semiconductor direct current transformation structures share one semiconductor electro-optical conversion unit.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of a chip according to an embodiment of the invention;
FIG. 2 is a schematic diagram of the semiconductor DC transformer structure in the chip according to the present invention;
FIG. 3 is a schematic diagram of a chip according to an embodiment of the invention;
fig. 4 is a schematic structural diagram of a semiconductor dc transformer structure of a chip according to an embodiment of the invention;
fig. 5 is a schematic structural diagram of a semiconductor dc transformer structure of a chip according to an embodiment of the invention; and
fig. 6 is a schematic structural diagram of a chip according to an embodiment of the invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative only and should not be construed as limiting the invention.
The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the applicability of other processes and/or the use of other materials. In addition, the structure of a first feature described below as "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
The present invention provides a chip with a semiconductor dc transformer structure, as shown in fig. 1, the chip includes: a substrate 20; at least one semiconductor dc transformer structure 10 formed over a substrate 20. The semiconductor dc transformer structure 10 further includes: at least one semiconductor electro-optical conversion unit 110 for converting input electric energy into optical energy; and at least one semiconductor photoelectric conversion unit 120 for converting light energy into output electric energy. The number of the semiconductor photoelectric conversion units 120 is proportional to the number of the semiconductor photoelectric conversion units 110 to realize direct current voltage transformation, and the wavelength bands of the working light of the semiconductor photoelectric conversion units 110 and the working light of the semiconductor photoelectric conversion units 120 are matched. It should be noted that although fig. 1 shows a fixed number of semiconductor dc transformer structures 10, semiconductor electro-optical conversion units 110, and semiconductor photoelectric conversion units 120, in practical cases, any number is possible.
The working principle of the semiconductor dc transformation structure 10 in the chip of the present invention is shown in fig. 2: the input terminal lead LI is connected to the semiconductor electro-optical conversion unit 110, and the output terminal lead LO is connected to the semiconductor photoelectric conversion unit 120. The semiconductor electro-optical conversion unit 110 includes m Light Emitting Diodes (LEDs) with a dc operating voltage of V1, resonant light emitting diodes (RCLEDs), or Laser Diodes (LDs), and the semiconductor electro-optical conversion unit 120 includes n photovoltaic cells with a photovoltaic voltage of V2. The light emitted from the semiconductor photoelectric conversion unit 110 and the light emitted from the semiconductor photoelectric conversion unit 120 with the optimized photoelectric conversion efficiency have the same wavelength band, that is, the operating light of the semiconductor photoelectric conversion unit and the operating light of the semiconductor photoelectric conversion unit need to be matched, so that the device has high photoelectric-photoelectric energy conversion efficiency and less energy loss in the voltage transformation process. In an operating state, the semiconductor photoelectric conversion unit 110 emits light due to the voltage applied across the two terminals, and photons are transmitted to the semiconductor photoelectric conversion unit 120 to excite different carriers in the semiconductor photoelectric conversion unit 120 and separate the carriers by the built-in electric field to form a photogenerated voltage and a photogenerated current, thereby realizing energy transmission by using light waves. During this energy transfer, the input/output voltage is (m × V1)/(n × V2).
According to the chip provided by the embodiment of the invention, in the semiconductor direct-current voltage transformation structure, the semiconductor electro-optical conversion unit is arranged at the input end to convert direct current into light for transmission, the semiconductor photoelectric conversion unit is arranged at the output end to convert the light into direct current for output, different numbers of semiconductor electro-optical conversion units are respectively connected with the semiconductor photoelectric conversion units in series at the input end and the output end, the direct-current voltage transformation is realized by utilizing the working voltage difference and the number proportion of the semiconductor electro-optical conversion units and the semiconductor photoelectric conversion units, and then the chip is connected with a load circuit through the power supply pins. The chip has the direct current voltage transformation function, has the advantages of no electromagnetic radiation, no coil structure, safety, reliability, small volume, long service life, light weight, convenient installation and maintenance and the like, all output modules are mutually independent and are not influenced, and the chip can be integrated in a whole chip, which cannot be realized by the prior art.
Fig. 3 is a schematic diagram of a chip having a semiconductor dc transformer structure according to an embodiment of the invention.
As shown in fig. 3, the chip has four semiconductor dc voltage transforming structures 10, which can respectively transform 12V dc input voltage into 5V, 1.8V, 50V and 3.3V output voltages, where 12V is a common dc input voltage, 5V and 3.3V are common analog output voltages, 1.8V is a common digital output voltage, and 50V is a common MEMS output voltage. The chip can achieve the purpose of providing an input voltage and outputting various different output voltages to drive different direct-current voltage functional modules.
In an embodiment of the present invention, the semiconductor dc transformer structure 10 of the chip further includes an isolation layer 130 for electrically isolating the semiconductor electro-optical conversion unit 110 and the semiconductor photoelectric conversion unit 120. Depending on the specific location of the isolation layer 130, there are two cases of fig. 4 and 5, wherein the arrows in fig. 4 and 5 indicate the propagation direction of the operating light.
As shown in fig. 4, the semiconductor dc transformer structure 10 in the chip has a double-sided structure, and the isolation layer 130 is located in the middle. At least one semiconductor electro-optical conversion unit 110 is formed on one side of the isolation layer 130, and each semiconductor electro-optical conversion unit 110 includes an electro-optical conversion layer, and at least one semiconductor photoelectric conversion unit 120 is formed on the other side of the isolation layer 130, and each semiconductor photoelectric conversion unit 120 includes a photoelectric conversion layer, wherein the isolation layer 130 is transparent to the working light emitted from the electro-optical conversion layer, and the working light propagates in a transmissive manner.
As shown in fig. 5, the semiconductor dc transformer structure 10 in the chip is a single-sided structure, and the isolation layer 130 is located at the bottom or the top thereof. The isolation layer 130 has a light reflecting structure 131 therein. The at least one semiconductor electro-optical conversion unit 110 and the at least one semiconductor photoelectric conversion unit 120 are formed on the same side of the isolation layer 130 and are arranged at intervals, wherein each semiconductor electro-optical conversion unit 110 includes an electro-optical conversion layer, each photoelectric conversion unit 120 includes a photoelectric conversion layer, the isolation layer 130 is transparent to working light emitted by the electro-optical conversion layer, and the light reflection structure 131 is used for reflecting the working light from the electro-optical conversion layer to the photoelectric conversion layer.
In addition, in order to obtain good photoelectric energy conversion efficiency, the phenomenon of total reflection of the working light at the interfaces of the layers during propagation should be avoided. Since total reflection occurs when and only when light enters a material with a smaller refractive index from a material with a larger refractive index, the occurrence of total reflection can be avoided only by properly matching the refractive indexes of the layers along the propagation direction of the light. Therefore, in order to reduce the total reflection of the working light between the interfaces, the refractive index of the material of each layer structure along the transmission path of the working light is required to satisfy the matching condition. Specifically, in one embodiment of the present invention, the semiconductor electro-optical conversion unit 110, the spacer 130, and the semiconductor photoelectric conversion unit 120 have similar refractive indices. In another embodiment of the present invention, the refractive indices of the materials of the semiconductor electro-optical conversion unit 110, the spacer layer 130, and the semiconductor photoelectric conversion unit 120 are increased incrementally. In one embodiment of the present invention, at least one of the semiconductor electro-optical conversion unit 110, the isolation layer 130, and the semiconductor photoelectric conversion unit 120 has a roughened surface, a patterned surface, or a photonic crystal structure. The measures can reduce the total reflection of light at the interface, and are beneficial to the conduction of working light, thereby being beneficial to the conversion of energy.
In the above embodiments of the present invention, the material of the isolation layer 130 may be solid transparent insulating or semi-insulating Al2O3、Y2O3、Gd2O3、AlN、SiO2、MgO、CaO、Si3N4BN, diamond, LiAlO2、LiGaO2、GaAs、SiC、TiO2、ZrO2、SrTiO3、Ga2O3、ZnS、ZnSe，CdTe、SiC、MgAl2O4、LiNbO3、LiTaO3、Y3AI5O12、KNbO3、LiF、MgF2、BaF2、GaF2、LaF3BeO, GaP, GaN, and rare earth oxides, and combinations thereof.
In the above embodiments of the present invention, the electro-optical conversion layer material in the semiconductor electro-optical conversion unit 110 may be one of AlGaInP, GaN, InGaNInGaN, AlGaInN, ZnO, AlGaInAs, GaAS, InGaAs, InGaAsP, AlGaAs, or ingainsb, and a combination thereof.
In the above-described embodiments of the present invention, the material of the photoelectric conversion layer in the semiconductor photoelectric conversion unit 120 may be one of Si, Ge, SiGe, AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, or InGaAsNSb, and a combination thereof.
In the above embodiments of the present invention, the material of the electrode layer on the working light transmission path may be transparent conductive material GaAs, GaN, AlGaInP, AlGaInN, AlGaInAs, ITO, SnO2One of ZnO or graphene, and combinations thereof.
In a preferred embodiment of the invention, the medium filling the cells has a light-limiting effect as well. Specifically, in the chip having the semiconductor dc transformer structure 10 with the double-sided structure as shown in fig. 4, a transparent insulating medium may be filled between the plurality of semiconductor electro-optical conversion units 110 and between the plurality of semiconductor photoelectric conversion units 120, and the top of the transparent insulating medium is covered with a light-reflecting layer, or filled with a light-reflecting insulating medium; alternatively, in the chip having the single-sided semiconductor dc transformer structure 10 shown in fig. 5, a transparent insulating medium may be filled between the semiconductor electro-optical conversion unit 110 and the semiconductor photoelectric conversion unit 120, and the top of the transparent insulating medium is covered with a reflective layer, or the reflective insulating medium is filled.
In a preferred embodiment of the present invention, the chip further comprises: the light trapping structure 140, the light trapping structure 140 is used to confine the working light inside the semiconductor dc transformer structure, so as to reduce the energy loss caused by the light loss. The light limiting structure may be disposed in various ways, for example, when the semiconductor dc transformer structure 10 is a double-sided structure, the light limiting structure 140 may be configured to dispose an omnidirectional reflector (ODR) or a Distributed Bragg Reflector (DBR) on two sides of the semiconductor electro-optical conversion unit 110 and the semiconductor photoelectric conversion unit 120 that are not adjacent to each other to reflect light, so that the working light cannot be emitted. For example, when the semiconductor dc transformer structure 10 is a single-sided structure, the light confining structure 140 may be configured such that an omnidirectional reflector (ODR) or a Distributed Bragg Reflector (DBR) is provided on the surfaces of the semiconductor electro-optical conversion unit 110 and the semiconductor photoelectric conversion unit 120 that do not contact the spacer layer 130 to reflect light so that the operating light cannot be emitted. The Bragg reflector can be made of Rare Earth Oxide (REO) materials, and the REO materials are transparent to working light, good in insulating property, resistant to high voltage and resistant to breakdown.
In an embodiment of the present invention, as shown in fig. 6, the chip further includes: one or more power pins 30, an on-chip power distribution network 40, and a circuit function module 50. Wherein, the power supply pin 30 is connected with an external power supply; the on-chip power distribution network 40 is connected with the power supply pin 30 and the input end of at least one semiconductor direct current transformation structure 10, so that the input end of the semiconductor direct current transformation structure 10 is connected with an external power supply; the output end of the semiconductor dc transformer structure 10 is connected to the circuit function module 50 to supply power for supplying power. The circuit function module 50 refers to a digital logic circuit, an analog circuit, an RF circuit, a flash circuit, an MEMS device, and other modules that need different voltages and are integrated on the same chip. For example, a plurality of different sets of power supply voltages are required on a flash chip, wherein the power supply voltages are from 1.2V to 20V, and particularly, the write programming voltage of the flash chip is often 10 to 20V.
In one embodiment of the present invention, the chip further comprises: and the control module 60 is connected with the at least one semiconductor direct current transformation structure 10 and controls the semiconductor direct current transformation structure 60. Specifically, the control module 60 may sample and control the current and voltage at the input and output ends of the semiconductor dc transformer structure 10 to achieve the objectives of voltage regulation, voltage stabilization, power efficiency optimization, power energy saving shutdown, and the like.
In one embodiment of the present invention, the chip is fabricated by an on-chip fully integrated process, and the substrate 20 is made of Si, SiGe, GaAs, InP, SiC, or Al2O3Or a flexible material. When the substrate 20 is a flexible material such as a plastic film, the semiconductor photoelectric conversion unit 110 may be an Organic Light Emitting Diode (OLED) or a quantum dot light emitting diode, and the semiconductor photoelectric conversion unit 120 may be an organic photovoltaic cell or a quantum dot photovoltaic cell.
In one embodiment of the present invention, the chip includes a plurality of semiconductor dc transformer structures 10, wherein the plurality of semiconductor dc transformer structures 10 share one semiconductor electro-optical conversion unit 110. For example, a large-area light emitting diode can be used as the semiconductor electro-optical conversion unit 110 in the plurality of semiconductor dc transformer structures, and the chip structure of this embodiment is more compact and reliable.
The invention also has other variant embodiments, for example, a chip for realizing the direct current transformation of the power supply and a chip for realizing the functions of storage, operation, MEMS sensing and the like are integrated together to form a complete system by utilizing a three-dimensional chip stacking or bonding technology, or the chip for realizing the direct current transformation and other functional modules are packaged together to form a system by system-in-package.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (15)
1. A chip with a semiconductor direct current transformation structure is characterized by comprising:
a substrate;
at least one semiconductor DC transformer structure formed over the substrate, comprising:
at least one semiconductor electro-optical conversion unit for converting input electric energy into optical energy; and
the photoelectric conversion device comprises at least one semiconductor photoelectric conversion unit, a photoelectric conversion unit and a photoelectric conversion unit, wherein the semiconductor photoelectric conversion unit is used for converting the light energy into output electric energy, the number of the semiconductor photoelectric conversion units is in a certain proportion to the number of the semiconductor photoelectric conversion units so as to realize direct current voltage transformation, and the working light spectrum of the semiconductor photoelectric conversion unit is matched with that of the semiconductor photoelectric conversion unit;
one or more power supply pins connected with an external power supply;
an on-chip power distribution network connected to the power pins and the at least one semiconductor DC transformer structure; and
circuit functional modules, each of which is connected to at least one semiconductor DC transforming structure,
the input end of the semiconductor direct current transformation structure is connected with the on-chip power distribution network, and the output end of the semiconductor direct current transformation structure is connected with the circuit function module which needs to supply power on the chip.
2. The chip of claim 1, further comprising:
the isolation layer is arranged on the substrate,
the photoelectric conversion device comprises an isolation layer, at least one semiconductor photoelectric conversion unit and at least one semiconductor photoelectric conversion unit, wherein the at least one semiconductor photoelectric conversion unit is formed on one side of the isolation layer and comprises an photoelectric conversion layer, the at least one semiconductor photoelectric conversion unit is formed on the other side of the isolation layer and comprises a photoelectric conversion layer, the isolation layer is transparent to working light emitted by the photoelectric conversion layer, and the working light is transmitted in a transmission mode.
3. The chip of claim 1, further comprising:
an isolation layer having a light reflecting structure therein,
the semiconductor electro-optical conversion units and the at least one semiconductor photoelectric conversion unit are formed on the same side of the isolation layer and are arranged at intervals, each semiconductor electro-optical conversion unit comprises an electro-optical conversion layer, each photoelectric conversion unit comprises a photoelectric conversion layer, the isolation layer is transparent to working light emitted by the electro-optical conversion layer, and the light reflecting structure is used for reflecting the working light from the electro-optical conversion layer to the photoelectric conversion layer.
4. The chip according to claim 2 or 3, wherein materials of the semiconductor electro-optical conversion unit, the spacer, and the semiconductor photoelectric conversion unit have similar refractive indices.
5. The chip according to claim 2 or 3, wherein refractive indices of materials of the semiconductor electro-optical conversion unit, the spacer layer, and the semiconductor photoelectric conversion unit are increased.
6. The chip according to claim 2 or 3, wherein at least one of the semiconductor electro-optical conversion unit, the isolation layer, and the semiconductor photoelectric conversion unit has a roughened surface, a patterned surface, or a photonic crystal structure.
7. The chip of claim 2 or 3, wherein the isolation layer material is solid transparent insulating or semi-insulating Al2O3、Y2O3、Gd2O3、AlN、SiO2、MgO、CaO、Si3N4BN, diamond, LiAlO2、LiGaO2、GaAs、SiC、TiO2、ZrO2、SrTiO3、Ga2O3、ZnS、ZnSe，CdTe、SiC、MgAl2O4、LiNbO3、LiTaO3、Y3AI5O12、KNbO3、LiF、MgF2、BaF2、GaF2、LaF3BeO, GaP, GaN, and rare earth oxides, and combinations thereof.
8. The chip of claim 7, wherein the material of the electro-optic conversion layer is one of AlGaInP, GaN, InGaNInGaN, AlGaInN, ZnO, AlGaInAs, GaAS, InGaAs, InGaAsP, AlGaAs, or InGaAsNSb, and combinations thereof.
9. The chip of claim 8, wherein the material of the photoelectric conversion layer is one of Si, Ge, SiGe, AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, or InGaAsNSb, and a combination thereof.
10. The chip of claim 9, wherein the electrode layer on the operating light transmission path is made of transparent conductive material GaAs, GaN, AlGaInP, AlGaInN, AlGaInAs, ITO, SnO2One of ZnO or graphene, and combinations thereof.
11. The chip of claim 10, wherein a transparent insulating medium is filled between the semiconductor electro-optical conversion units, or between the semiconductor electro-optical conversion units and the semiconductor electro-optical conversion units, and a light reflecting layer is covered on top of the transparent insulating medium; or,
and reflective insulating media are filled between the semiconductor electro-optical conversion units, between the semiconductor photoelectric conversion units or between the semiconductor electro-optical conversion units and the semiconductor photoelectric conversion units.
12. The chip of claim 11, further comprising:
and the light trapping structure is used for limiting the working light rays in the semiconductor direct current transformation structure, so that the energy loss caused by light loss is reduced.
13. The chip of claim 1, further comprising:
and the adjusting control module is connected with the at least one semiconductor direct current transformation structure and is used for carrying out voltage adjusting control on the semiconductor direct current transformation structure according to the output voltage of the semiconductor direct current transformation structure.
14. The chip of claim 13, wherein the chip is fully integrated on chip, and the substrate is made of Si, SiGe, GaAs, InP, SiC, Al2O3Or a flexible material.
15. The chip of claim 14, wherein the chip comprises a plurality of the semiconductor dc transformer structures, wherein the plurality of the semiconductor dc transformer structures share one of the semiconductor electro-optical conversion units.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210123075.XA CN103378086B (en) | 2012-04-24 | 2012-04-24 | A kind of chip with semiconductor direct current variable pressure structure |
| US13/823,545 US8785950B2 (en) | 2011-11-10 | 2012-11-09 | Chip with semiconductor electricity conversion structure |
| PCT/CN2012/084409 WO2013067966A1 (en) | 2011-11-10 | 2012-11-09 | Chip with semiconductor electricity conversion structure |
| TW101142015A TWI505492B (en) | 2012-04-24 | 2012-11-12 | Chip with semiconductor dc voltage transformation structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210123075.XA CN103378086B (en) | 2012-04-24 | 2012-04-24 | A kind of chip with semiconductor direct current variable pressure structure |
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| Publication Number | Publication Date |
|---|---|
| CN103378086A CN103378086A (en) | 2013-10-30 |
| CN103378086B true CN103378086B (en) | 2016-04-06 |
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| CN (1) | CN103378086B (en) |
| TW (1) | TWI505492B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005978A (en) * | 2010-11-30 | 2011-04-06 | 中国工程物理研究院流体物理研究所 | Electric energy isolation photovoltaic power unit |
| CN102569488A (en) * | 2012-01-20 | 2012-07-11 | 郭磊 | Semiconductor direct current transformer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6936854B2 (en) * | 2001-05-10 | 2005-08-30 | Canon Kabushiki Kaisha | Optoelectronic substrate |
| US10847666B2 (en) * | 2009-09-25 | 2020-11-24 | Immunolight, Llc | Up and down conversion systems for improved solar cell performance or other energy conversion |
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- 2012-04-24 CN CN201210123075.XA patent/CN103378086B/en active Active
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005978A (en) * | 2010-11-30 | 2011-04-06 | 中国工程物理研究院流体物理研究所 | Electric energy isolation photovoltaic power unit |
| CN102569488A (en) * | 2012-01-20 | 2012-07-11 | 郭磊 | Semiconductor direct current transformer |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201344878A (en) | 2013-11-01 |
| CN103378086A (en) | 2013-10-30 |
| TWI505492B (en) | 2015-10-21 |
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