CN103426967B - Semiconductor photoelectric/electric energy conversion system - Google Patents
Semiconductor photoelectric/electric energy conversion system Download PDFInfo
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- CN103426967B CN103426967B CN201210451342.6A CN201210451342A CN103426967B CN 103426967 B CN103426967 B CN 103426967B CN 201210451342 A CN201210451342 A CN 201210451342A CN 103426967 B CN103426967 B CN 103426967B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention provides a semiconductor photoelectric/electric energy conversion system. The semiconductor photoelectric/electric energy conversion system includes a substrate and a plurality of photoelectric/electric energy conversion modules which are connected in series and/or in parallel with one another such that the expansion of voltage and/or power can be realized, wherein each photoelectric/electric energy conversion module further includes an isolation layer which is transparent for working light of the photoelectric/electric energy conversion module, one or a plurality of electro-optic conversion structures which are formed on the isolation layer and are used for converting inputted electric energy into working light and emitting the working light, and one or a plurality of photovoltaic conversion structures which are formed on the isolation layer and are used for converting working light into electric energy and outputting the electric energy, wherein the absorption spectra of the photovoltaic conversion structures are in frequency spectrum matching with the emission spectra of the electro-optic conversion structures. The semiconductor photoelectric/electric energy conversion system has the advantages of simple structure and flexible expansion of voltage and power.
Description
Technical field
The present invention relates to power transformation distribution technique and electronic devices and components field, particularly to a kind of conversion of semiconductor optoelectronic electric energy
System.Background technology
In electric power with electronic system, electric energy conversion relies on unsteady flow to realize with transformation, and this process is common and important
Link, wherein AC/AC transformation, ac/dc variable flow and variable pressure, AC/DC variable flow and variable pressure, DC-DC transformation have
It is widely applied very much.
In prior art, AC/AC transformation generally adopts electromagnetic field as energy transmission medium, former using electromagnetic induction
Reason realizes transformation by the coupling between the input and output coil of the different numbers of turn；Ac/dc variable flow and variable pressure then adopts diode
The rectifier circuit constituting is realizing；DC-DC transformation is by the inductance of power semiconductor and drive circuit, energy storage
Or the changer that constitutes of the device such as electric capacity is realizing；AC/DC variable flow and variable pressure then passes through power semiconductor and drives electricity
Road, filter circuit are realizing.In above scheme, all suffer from the drawback that：Required device is complicated, and element is numerous, and volume is larger,
Phase place is difficult synchronous, has electromagnetic radiation, has certain energy loss it is impossible to high pressure resistant, less stable etc..For this reason, developing a kind of energy
Reach device and the system of electric energy conversion, and corresponding packing forms have very important value.
Content of the invention
It is contemplated that at least solving one of above-mentioned technical problem to a certain extent or providing at a kind of useful business
Industry selects.For this reason, it is an object of the present invention to propose that a kind of structure is simple, voltage and power can flexible expansion quasiconductor
Photoelectricity electric energy conversion system.
Semiconductor photoelectric/electrenergy energy conversion system according to embodiments of the present invention, including：Substrate；Multiple photoelectricity electric energy moduluss of conversion
Block, is serially connected between the plurality of photoelectricity electric energy conversion module and/or in parallel, to realize the extension of voltage and/or power, its
In, described photoelectricity electric energy conversion module further includes：Sealing coat, the work to described photoelectricity electric energy conversion module for the described sealing coat
Make light transparent；It is formed at the one or more electro-optic conversion structure on described sealing coat, for electric energy conversion will be inputted
For the transmitting of described working light；With the one or more photovoltaic conversion structure being formed on described sealing coat, for by institute
State working light and be converted to output electric energy.In one embodiment of the invention, wherein, the absorbing light of described photovoltaic conversion structure
Spectrum is mated with frequency spectrum between described electro-optic conversion structure emission spectrum.
In one embodiment of the invention, described photoelectricity electric energy conversion module turns for DC (direct current)-DC type photoelectricity electric energy
Die change block, AC (exchange)-AC type photoelectricity electric energy conversion module, AC-DC type photoelectricity electric energy conversion module or DC-AC type photoelectricity electric energy
Modular converter.
In one embodiment of the invention, in described photoelectricity electric energy conversion module, described electro-optic conversion structure includes sending out
Optical diode, resonant radiation diode, laser diode, quantum dot light emitting device or organic luminescent device.
In one embodiment of the invention, in described photoelectricity electric energy conversion module, described photovoltaic conversion structure includes half
Conductor photovoltaic cell, quantum dot photovoltaic battery or organic material photovoltaic cell.
In one embodiment of the invention, in described photoelectricity electric energy conversion module, described sealing coat is insulant, institute
State and isolated by the insulation characterisitic of material itself between electro-optic conversion structure, described electro-optic conversion structure；Or, described every
Absciss layer is semi-conducting material, between described electro-optic conversion structure and described sealing coat, described photovoltaic conversion structure and described isolation
Isolated by reverse biased pn junction structure between layer.
In one embodiment of the invention, described photoelectricity electric energy conversion module is flat pattern device, and described light
The input of electric electric energy conversion module and outfan are in diagonal cross-distribution.
In one embodiment of the invention, described semiconductor photoelectric/electrenergy energy conversion system also includes：Adjustment module, described
Adjustment module is connected with total input of the plurality of photoelectricity electric energy conversion module and total outfan, for described total by monitoring
The running parameter of outfan, the running parameter of total input described in feedback regulation.
In one embodiment of the invention, each layer material in described photoelectricity electric energy conversion module, on light propagation path
The coefficient of refraction coupling of material.
In one embodiment of the invention, in described photoelectricity electric energy conversion module, also include optical trap, described optics
Trap is used for light is limited in inside described photoelectricity electric energy conversion module.
Semiconductor photoelectric/electrenergy energy conversion system according to embodiments of the present invention at least has the advantage that：
(1) this system includes multiple photoelectricity electric energy conversion module, and each module itself not only can be realized DC-DC electric energy and turn
Change, the conversion of DC-AC, AC-DC or AC-AC electric energy can also be realized, and power and/or electricity are realized by flexible connection in series-parallel connection
Companding exhibition.
(2) the photoelectricity electric energy conversion module in this system and substrate are all flat pattern, and specific surface area is big, beneficial to radiating.
(3) this system adopt diagonal distribution of electrodes encapsulate, succinctly attractive in appearance between line do not intersect, be that assembly working brings
Convenient, the voltage difference between adjacent photo electric energy conversion module can be reduced simultaneously, increase the insulation distance between electrode, thus
Improve insulation characterisitic, can effectively prevent from puncturing.
(4), after the input circuit of this system provides the input voltage of a fixation, output circuit can set multiple taps,
Export different voltages simultaneously, meet different use demands.
The additional aspect of the present invention and advantage will be set forth in part in the description, and partly will become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description
The above-mentioned and/or additional aspect of the present invention and advantage will become from reference to the description to embodiment for the accompanying drawings below
Substantially and easy to understand, wherein：
Fig. 1 is the structural representation of the semiconductor photoelectric/electrenergy energy conversion system of the present invention；
Fig. 2 is the structural representation of another semiconductor photoelectric/electrenergy energy conversion system of the present invention；
Fig. 3 is the work of the DC-DC type photoelectricity electric energy conversion module in the semiconductor photoelectric/electrenergy energy conversion system of the present invention
Schematic diagram and side structure schematic view；
Fig. 4 is the work of the AC-AC type photoelectricity electric energy conversion module in the semiconductor photoelectric/electrenergy energy conversion system of the present invention
Schematic diagram and side structure schematic view；
Fig. 5 is the work of the AC-DC type photoelectricity electric energy conversion module in the semiconductor photoelectric/electrenergy energy conversion system of the present invention
Schematic diagram and side structure schematic view；
Fig. 6 is the work of the DC-AC type photoelectricity electric energy conversion module in the semiconductor photoelectric/electrenergy energy conversion system of the present invention
Schematic diagram and side structure schematic view；
Fig. 7 is the photoelectricity electric energy conversion module in the semiconductor photoelectric/electrenergy energy conversion system of one embodiment of the present of invention
Structural representation；
Fig. 8 is the photoelectricity electric energy conversion module in the semiconductor photoelectric/electrenergy energy conversion system of an alternative embodiment of the invention
Structural representation；
Fig. 9 is the photoelectricity electric energy conversion module in the semiconductor photoelectric/electrenergy energy conversion system of an alternative embodiment of the invention
Structural representation；
Figure 10 is the structural representation of the semiconductor photoelectric/electrenergy energy conversion system with adjustment module of the present invention；
Figure 11 is the principle schematic of the adjustment module of Figure 10；
Figure 12 is the schematic appearance of the photoelectricity electric energy conversion module of the present invention；
Figure 13 is the schematic diagram being connected in series of multiple photoelectricity electric energy conversion module of the present invention；
Figure 14 is the schematic diagram being connected in parallel afterwards of first connecting of multiple photoelectricity electric energy conversion module of the present invention；With
Figure 15 is the schematic diagram of the output lead of multiple photoelectricity electric energy conversion module of the present invention.
Specific embodiment
Embodiments of the invention are described below in detail, the example of described embodiment is shown in the drawings, wherein from start to finish
The element that same or similar label represents same or similar element or has same or like function.Below with reference to attached
The embodiment of figure description is exemplary it is intended to be used for explaining the present invention, and is not considered as limiting the invention.
In describing the invention it is to be understood that term " " center ", " longitudinal ", " horizontal ", " length ", " width ",
" thickness ", " on ", D score, "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outward ", " up time
The orientation of instruction such as pin ", " counterclockwise " or position relationship are based on orientation shown in the drawings or position relationship, are for only for ease of
The description present invention and simplification describe, rather than the device of instruction or hint indication or element must have specific orientation, Yi Te
Fixed azimuth configuration and operation, are therefore not considered as limiting the invention.
Additionally, term " first ", " second " are only used for describing purpose, and it is not intended that indicating or hint relative importance
Or the implicit quantity indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can express or
Implicitly include one or more this feature.In describing the invention, " multiple " are meant that two or more,
Unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or is integrally connected；It can be machine
Tool connects or electrically connects；Can be to be joined directly together it is also possible to be indirectly connected to by intermediary, can be two units
Connection within part.For the ordinary skill in the art, above-mentioned term can be understood as the case may be at this
Concrete meaning in bright.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or D score
The first and second feature directly contacts can be included not to be directly contact but passes through it is also possible to include the first and second features
Between other characterisation contact.And, fisrt feature second feature " on ", that " top " and " above " include first is special
Levy directly over second feature and oblique upper, or be merely representative of fisrt feature level height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " below " include fisrt feature directly over second feature and oblique upper, or be merely representative of
Fisrt feature level height is less than second feature.
For making those skilled in the art more fully understand the present invention, first the principle of prior art and the present invention is illustrated
And contrast.Say from physical principle, traditional AC transformer using be electromagnetic induction principle, the free electron shake in conductor
Dissipating one's fortune raw electromagnetic field as energy transmission, energy being transmitted by the coupling between primary and secondary coil, thus realizing alternating current buckling
Change.What the semiconductor photoelectric/electrenergy energy conversion system in the present invention was followed is principle of quantum mechanics, by current-carrying in semi-conducting material
Son produces photon in different transitions between energy level, by the use of photon as energy transmission medium, then in other semi-conducting material
Excite generation carrier, thus realizing voltage transformation.Therefore, because transmitting the difference of energy medium, particle (photon) characteristic takes
The characteristic of Dai Bo (electromagnetic wave) becomes basic operation principle in the commutator transformer of the present invention.
The present invention proposes a kind of semiconductor photoelectric/electrenergy energy conversion system, including：Substrate；Multiple photoelectricity electric energy moduluss of conversion
Block, is serially connected between the plurality of photoelectricity electric energy conversion module and/or in parallel, to realize the extension of voltage and/or power, its
In, described photoelectricity electric energy conversion module further includes：Sealing coat, the work to described photoelectricity electric energy conversion module for the described sealing coat
Make light transparent；It is formed at the one or more electro-optic conversion structure on described sealing coat, for electric energy conversion will be inputted
For the transmitting of described working light；With the one or more photovoltaic conversion structure being formed on described sealing coat, for by institute
State working light and be converted to output electric energy.In one embodiment of the invention, the absorption spectrum of described photovoltaic conversion structure with
Frequency spectrum coupling between described electro-optic conversion structure emission spectrum.
The total energy conversion efficiency of the semiconductor photoelectric/electrenergy energy conversion system in the present invention is mainly determined by three factors：
Electric light energy conversion efficiency, photovoltaic energy conversion efficiency, light energy losses.Due to the development of LED and photovoltaic cell technology, now
The electro-optical efficiency of advanced semiconductor device and photoelectric transformation efficiency have reached very high level, such as AlGaInP
Already close to 100%, the blue-ray LED internal quantum efficiency of GaN material preparation is also for the internal quantum efficiency of the red-light LED of material preparation
Reach 80%, and the internal quantum efficiency of iii-v photovoltaic cell is also close to 100%, therefore light energy losses just become limit
The principal element of commutator transformer energy conversion efficiency of the present invention processed, therefore proposes three kinds of technology to reduce as far as possible in the present invention
Light energy losses, improve energy conversion efficiency, are respectively：Electro-optic conversion structure emission spectrum and photovoltaic conversion structure absorption spectrum
Between frequency spectrum coupling with reduce photon non-absorbing lose and heat loss, the refraction system of each material on light propagation path
, to reduce cirtical angle of total reflection loss and Fresnel reflection losses, light trapping is to reduce the energy loss that light leakage causes for number coupling.
These hereinafter have specific description.
Below in conjunction with the accompanying drawings the semiconductor photoelectric/electrenergy energy conversion system of embodiments of the invention is done and explain further.
As shown in figure 1, the semiconductor photoelectric/electrenergy energy conversion system of the present invention includes：Substrate 1 and the conversion of multiple photoelectricity electric energy
Module 2.Wherein, substrate 1 is used for supporting and radiates, and material can be metal, ceramic or plastics, and preferred density is little, thermal conductivity is good
Aluminium alloy or copper.Multiple photoelectricity electric energy conversion module 2 are fixed on substrate 1 with neatly arranging, single photoelectricity electric energy modulus of conversion
The output-input voltage of block 2 and power are fixing, are realized by flexible connected mode between multiple photoelectricity electric energy conversion module 2
Different output-input voltage ratios and power expansion.
Preferably, as shown in Fig. 2 the semiconductor photoelectric/electrenergy energy conversion system of the present invention can be also with by multiple substrates 1 and many
Individual photoelectricity electric energy conversion module 2 forms, and multiple substrate arrangement become stacked, can make to accommodate more photoelectricity electric energy in the confined space
Modular converter 2, realizes the high-power output of high voltage or high current.
Photoelectricity electric energy conversion module 2 in the semiconductor photoelectric/electrenergy energy conversion system of the present invention can have DC-DC type electric energy
Modular converter (with reference to Fig. 3), AC-AC type electric energy conversion module (with reference to Fig. 4), AC-DC type electric energy conversion module (with reference to Fig. 5) with
And four kinds of DC-AC type electric energy conversion module (with reference to Fig. 6), four differ primarily in that electro-optic conversion structure therein and photoelectricity
Connected mode between transformational structure is different, and those skilled in the art flexibly can be arranged with demand in actual applications.Need
Bright, controlling switch element K1 and K2 in Fig. 6 can have various ways, such as metal-oxide-semiconductor etc., can be easily on piece
Integrated.The working condition of photoelectricity electric energy conversion module of the DC-AC electric energy conversion shown in Fig. 6 is：K1 is turned in turn with K2, so that
Outfan assumes positive half period and negative half-cycle in turn, that is, produce exchange output.Below with DC-DC electric energy practical
As a example the photoelectricity electric energy conversion module of translation function, elaborate the basic knot of the photoelectricity electric energy conversion module introducing its invention
Structure.
Fig. 3 (a) is the fundamental diagram of DC-DC type photoelectricity electric energy conversion module, and wherein arrow represents working light.Defeated
Enter input direct voltage V1 in each electro-optic conversion structure 21 at end, produced with injection Carrier recombination in electro-optic conversion structure 21
Third contact of a total solar or lunar eclipse, photon transmission to photovoltaic conversion structure 22, produce different carriers to excite in photovoltaic conversion structure 22, and lead to
Cross built in field to separate, each photovoltaic conversion structure 22 exports DC voltage V2, thus realizing energy transmission using light wave.Need
It is noted that electro-optic conversion structure 21 should be mated with the working light of photovoltaic conversion structure 22.In this energy transport
In, on the one hand, the numerical value of V1 and V2 depends on the material characteristic parameter of electro-optic conversion structure 21 and photovoltaic conversion structure 22, such as material
Material species, emergent property, energy gap, doping content etc., therefore realize energy conversion effect by adjusting corresponding characterisitic parameter
Rate optimization；On the other hand, by connecting respectively the electro-optic conversion structure 21 of some and photoelectricity in input and outfan
Transformational structure 22, the number ratio using the two realizes direct current transformation.For example, it is assumed that electro-optic conversion structure 21 is m, photoelectricity turns
Changing structure 22 is n, then export total voltage/input total voltage=(n*V2)/(m*V1).In one embodiment of the invention,
Electro-optic conversion structure can be one, and photovoltaic conversion structure can be multiple；In another embodiment of the present invention, electro-optic conversion knot
Structure can be multiple, and photovoltaic conversion structure can be one；In yet another embodiment of the present invention, electro-optic conversion structure and quasiconductor
Photovoltaic conversion structure can be multiple for being.
Fig. 3 (b) is the side structure schematic view of DC-DC type photoelectricity electric energy conversion module, photoelectricity electric energy in the corresponding Fig. 1 of this figure
The side view that modular converter 2 intercepts at A-A ' place.Can see from Fig. 3 (b), photoelectricity electric energy conversion module 2 further includes：
Sealing coat 23, is formed at the electro-optic conversion structure 21 of the multiple series connection on sealing coat 23, and is formed on sealing coat 23
Multiple series connection photovoltaic conversion structure 22.Specifically：
Electro-optic conversion structure 21 can be light emitting diode (LED), resonant radiation diode (RC_LED) or laser diode
(LD), organic luminescent device or quantum dot light emitting device.This several device all can convert electrical energy into luminous energy effectively, work
Stable and reliable for performance, and heat effect is few, and RC_LED has the advantages that good directionality, modulation speed are higher further, LD
Have the advantages that monochromaticity is good, brightness is higher further.Electro-optic conversion structure 21 includes electro-optic conversion layer, and its material can be reddish yellow
The AlGaInP of light, GaN and InGaN of ultraviolet, InGaN, AlGaInN and ZnO of blue violet light, HONGGUANG or infrared light
AlGaInAs, GaAS, InGaAs, InGaAsP, AlGaAs, InGaAsNSb and other III compound nitrogen series, III arsenic
System or phosphorus series compound semi-conducting material and combinations thereof, luminous organic material or quantum dot light emitting material.
Photovoltaic conversion structure 22 can be for having back contacts (back contact) or burying contact (buried contact)
The semiconductor photovoltaic cells of one side electrode leading structure, quantum dot photovoltaic battery or organic material photovoltaic cell.There are back contacts
Or burying the light cell of the one side electrode leading structure of contact, its sensitive surface can avoid being affected by electrode shading, therefore energy turns
Change in hgher efficiency, and sensitive surface is more homogeneous attractive in appearance, assembling difficulty can be reduced, improve packing density.Photovoltaic conversion structure
22 include photoelectric conversion layer, and its material can be AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, GaAs, GaSb,
InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAs Sb, InGaAsNSb, other iii-v are directly prohibited
Carrying semiconductor material and combinations thereof, organic photovoltaic material or quantum dot photovoltaic material.
The working light that sealing coat 23 sends to electro-optic conversion structure 21 is transparent, turns for electro-optic conversion structure 21 and photoelectricity
Change the electrical isolation between structure 22.Separation principle can be isolated using the insulation characterisitic of material itself, can also lead to
Cross setting reverse biased pn junction structure between multiple electro-optic conversion structures 21, multiple photovoltaic conversion structure 22 to be isolated.At this
In a bright embodiment, sealing coat 23 can be insulant, the such as Al of solid transparent dielectric2O3, AlN, SiO2,
MgO, Si3N4, BN, diamond, LiAlO2, LiGaO2, GaAs, SiC, TiO2, ZrO2, SrTiO3, Ga2O3, ZnS, SiC,
MgAl2O4, LiNbO3, LiTaO3, yttrium-aluminium-garnet (YAG) crystal, KNbO3, LiF, MgF2, BaF2, GaF2, LaF3, BeO, GaP,
One of GaN and rare earth oxide REO and combinations thereof or filling liquid clear dielectric in the housing
Pure water, CCl4, CS2Or SF6Deng gaseous state transparent insulating medium.In another embodiment of the invention, sealing coat 23 can be half
Conductor material, such as GaP, GaAs, InP, GaN, Si, Ge, GaSb and other semi-conducting material transparent to working light, leads to
Cross and the technique such as be doped, inject to sealing coat 23, between multiple electro-optic conversion structures 21 and sealing coat 23 and multiple
Form PN junction between photovoltaic conversion structure 22 and 23, then PN junction is placed in reverse-biased to forbid the appearance of conducting electric current, from
And realize the electrical isolation between multiple electro-optic conversion structures 21 and multiple photovoltaic conversion structure 22.
Wherein, the number of photovoltaic conversion structure 22 proportional to the number of electro-optic conversion structure 21 to realize transformation, and light
Between the absorption spectrum of electric transformational structure 22 and the emission spectrum of electro-optic conversion structure 21, frequency spectrum mates.So-called frequency spectrum mates
Refer to, the light that electro-optic conversion structure 21 sends will with photovoltaic conversion structure 22 photoelectric transformation efficiency optimized light characteristic
Join, so that Electrooptical-optoelectrical energy conversion efficiency is higher, the energy loss of the photon in transformation process is less.Specifically：Electro-optic conversion is tied
The launching light of structure 21 can be the corresponding monochromatic light of absorption efficiency maximum with photovoltaic conversion structure 22 it is also possible to for other frequencies
Rate, can make photovoltaic conversion structure 22 occur quantum efficiency be more than 1 photovoltaic effect characteristic frequency light, a kind of feelings of optimization
Condition is that the size of the photon energy of electro-optic conversion layer transmitting both can ensure that the photon layer that can be photoelectrically converted absorbed, again will not be due to
Photon energy is too high to lead to excess energy to lose as heat waste, and a kind of possible ideal state is electro-optic conversion layer and opto-electronic conversion
The energy gap of layer active material is consistent, thus not only having can ensure that light absorption but also will not having caused the loss of remaining photon energy.Need
It is noted that above-mentioned " monochromatic light " has certain spectral width, for example, have for red-light LED 20nm about
Spectral width, and certain specific Frequency point non-limiting, this is known technology, will not be described here.
It should be noted that, although Fig. 3 is illustrated that multiple electro-optic conversion structures 21 and multiple photovoltaic conversion structure 22
In the situation of sealing coat 23 both sides, but in other embodiments of the present invention or multiple electro-optic conversion structure 21 with many
Individual photovoltaic conversion structure 22 is located at the same side of sealing coat 23, and arranges reflective structure so that multiple electric light in sealing coat 23 bottom
The launching light of transformational structure 21 sends to multiple photovoltaic conversion structure 22 after reflective structure.
Preferably, in photoelectricity electric energy conversion module 2, the coefficient of refraction coupling of the layers of material on light propagation path.
In other words, the refractive index of electro-optic conversion structure 21, sealing coat 23 and photovoltaic conversion structure 22 meets matching condition.So-called coupling
Refer to that the coefficient of refraction of three is similar to, or the coefficient of refraction of three is along the coefficient of refraction of the direction layers of material of paths
Gradually it is incremented by, so can be prevented effectively from light communication process and total reflection phenomenon occurs at each bed boundary, obtain good photoelectricity
Energy conversion efficiency.
Preferably, also optical trap can be further included in photoelectricity electric energy conversion module 2, this optical trap is used for work
Light is limited in inside photoelectricity electric energy conversion module 2, is particularly limited in the electro-optic conversion layer realizing conversion process of energy and light
Between electric conversion layer, prevent the light energy losses that light leak brings, improve energy conversion efficiency.
Photoelectricity electric energy conversion module 2 for making the present invention is preferably readily appreciated by one skilled in the art, inventor by this
Electrooptic semiconductor transformational structure 21 in bright and semiconductor photoelectric conversion structure 22 are further divided into many levels and carry out in detail
Introduce.It should be noted that hereafter the elaboration of the present invention is laid particular emphasis on material and the purposes of each level, for simplicity, set
Semiconductor light piezoelectric transformer is bilateral structure, and the number of electrooptic semiconductor transformational structure and semiconductor photoelectric conversion structure is one
Individual.
Fig. 7 show the structural representation of photoelectricity electric energy conversion module 2 according to an embodiment of the invention.This photoelectricity electricity
Can modular converter 2 include：First electrode layer 100；It is formed at the electro-optic conversion layer 102 on first electrode layer 100；It is formed at electricity
The second electrode lay 104 on light conversion layer 102；It is formed at the first sealing coat 106 on the second electrode lay 104；It is formed at
The 3rd electrode layer 108 on first sealing coat 106；It is formed at the photoelectric conversion layer 110 on the 3rd electrode layer 108；And
It is formed at the 4th electrode layer 112 on photoelectric conversion layer 110.
Wherein, electro-optic conversion layer 102, in order to the unidirectional current of input is converted to light, sends the work of required wave-length coverage
Make light.Working light includes one or more of whole spectral region of the infrared light from the ultraviolet light of 100nm to 10um
The combination of wave band, preferably unifrequent light, the HONGGUANG of such as 620nm, the blue light of 460nm, the purple light of 380nm, with favourable
In with ripe prior art manufacture electro-optic conversion layer.Such as electro-optic conversion layer 102 can adopt has high-quantum efficiency, height
The structure and material of electro-optical efficiency.Specifically, can be LED structure or laser structure, generally comprise active layer, limit
Layer, current spreading layer, the structure such as PN junction, wherein active layer can be multi-quantum pit structure, the electro-optic conversion layer of laser structure
Also include resonator cavity, LED structure includes resonance LED structure.The material of electro-optic conversion layer 102 selects to be based on material self-characteristic
(as defect concentration, band structure etc.) and required light wave property (as wave-length coverage), for example, can adopt reddish yellow light
AlGaInP, GaN and InGaN of ultraviolet, InGaN and AlGaInN of blue violet light, the AlGaInAs of ZnO, HONGGUANG or infrared light,
GaAS, InGaAs and other III compound nitrogen series, III As system or phosphorus series compound semi-conducting material and combinations thereof,
The material (such as AlGaInP, InGaN, GaN) that wherein defect concentration is low, light conversion efficiency is high is preferred.
Wherein, photoelectric conversion layer 110 is in order to convert light to electricity to realize transformation.The material of photoelectric conversion layer 110 includes
AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, InGaP, and other iii-v direct energy-gap semiconductor material
And combinations thereof.Electro-optic conversion layer 102 typically can select direct energy-gap semiconductor material, its band structure and photoelectric conversion layer
110 band structure matches so that the wave band of working light that electro-optic conversion layer 102 sends absorbs effect with photoelectric conversion layer 110
Rate highest wave band matches, to reach highest light-wave energy conversion efficiency.
Wherein, the first sealing coat 106, the second electrode lay 104 and the 3rd electrode layer 108 send to electro-optic conversion layer 102
Working light is transparent.In embodiments of the present invention, the second electrode lay 104, the first sealing coat 106 and the 3rd electrode layer 108 material
The photon energy of working light that sends more than electro-optic conversion layer 102 of energy gap, to prevent the second electrode lay 104, isolation
The absorption to described working light of 106 layers and the 3rd electrode layer 108, improves light wave conversion efficiency.
Additionally, the first sealing coat 106, the second electrode lay 104 and the material coefficient of refraction of the 3rd electrode layer 108 and electric light turn
Change the material coefficient of refraction coupling of layer 102 and photoelectric conversion layer 110, to avoid being all-trans in interface in light communication process
Penetrate.Because and if only if, light is totally reflected when the larger material of coefficient of refraction enters coefficient of refraction less material, therefore
In one preferred embodiment of the present invention, the second electrode lay 104, the first sealing coat 106, the 3rd electrode layer 108 and photoelectricity turn
The material coefficient of refraction changing layer 110 is identical, with avoid light from electro-optic conversion layer 102 transmit to during photoelectric conversion layer 110 in all circles
There is full transmitting at face；In one preferred embodiment of the present invention, the second electrode lay 104, the first sealing coat the 106, the 3rd
The material coefficient of refraction echelon of electrode layer 108 and photoelectric conversion layer 110 increases.Described " echelon increase " is meant that：Each institute
The material coefficient of refraction stating layer is not less than the material coefficient of refraction of its previous described layer, i.e. the material refraction system of some described layers
Number can be identical with its previous described layer, but the material coefficient of refraction of described each layer is in integrally increasing trend；In the present invention one
In individual preferred embodiment, the second electrode lay 104, the first sealing coat 106, the 3rd electrode layer 108 and photoelectric conversion layer 110
Material coefficient of refraction is gradually increased.By above-mentioned preferred embodiment, on the one hand avoid light along electric light conversion coating 102 to photoelectricity
During the transmission of conversion layer 110 direction, (light of inclusion electro-optic conversion layer 102 generation and described each electrode layer and each reflecting layer reflect
Light) it is totally reflected, to improve the efficiency of transmission of light；On the other hand promote light from photoelectric conversion layer 110 to electro-optic conversion layer 102
During the transmission of direction, (light of main the third and fourth electrode including photoelectric conversion layer 110 and the reflection of the second reflecting layer) generation is complete
Transmitting, more light are limited in photoelectric conversion layer 110, thus improving the efficiency that light is converted to electricity.
In addition, the present invention can also be using the figure such as photon passing through roughening or rule in the interface of different material layer
Crystal structure etc. is lowering total reflection.Therefore in the preferred embodiment of the invention, electro-optic conversion layer 102, the second electrode lay 104,
At least one of first sealing coat 106, the 3rd electrode layer 108 and photoelectric conversion layer 110 have roughened surface or photon is brilliant
Body structure, to increase light transmission, reduces the total reflection of light.
First sealing coat 106 is used for realizing electro-optic conversion layer 102 and the electrical isolation of photoelectric conversion layer 110, makes input electricity
Pressure and output voltage do not influence each other, simultaneously transparent to working light, enable to carry the light of energy from photoelectric conversion layer 102
It is transferred to electro-optic conversion layer 110, realizes the transmission of energy, finally realize voltage transformation.The thickness of the first sealing coat 106 depends on
The size of the voltage of input and output and insulating requirements, the first sealing coat is thicker, and insulation effect is better, the breakdown voltage that can bear
Higher, but the decay to light may be bigger simultaneously, and the determination principle of therefore thickness of insulating layer is：Thinner under meeting insulating requirements
Better.Based on above-mentioned requirements, in embodiments of the present invention, the material of the first sealing coat 106 is preferably Al2O3, AlN, SiO2,
MgO, Si3N4, BN, diamond, LiAlO2, LiGaO2, semi-insulated GaAs, SiC or GaP, one of GaN and combinations thereof, with
And rare earth oxide REO and combinations thereof.The material of the second electrode lay 104 and the 3rd electrode layer 108 can for heavily doped GaAs,
GaN, GaP, AlGaInP, AlGaInN, AlGaInAs, or conductive, transparent metal oxide materials ITO (indium tin oxide),
SnO2, ZnO and combinations thereof etc..
In one preferred embodiment of the present invention, between first electrode layer 100 and electro-optic conversion layer 102, also include first
Reflecting layer 101, also includes the second reflecting layer 111, as shown in Figure 7 between the 4th electrode layer 112 and photoelectric conversion layer 110.Described
Light is limited in roundtrip between electro-optic conversion layer 102 and photoelectric conversion layer 110 by the first and second reflecting layer, to prevent light from letting out
Dew, improves the energy conversion efficiency of light.The material in reflecting layer needs to meet steady to working light reflection efficiency height, material property
Fixed, low, good conductivity of interface contact resistance etc. requires.Specifically can be realized by following two modes：One kind is that Prague is anti-
Penetrate mirror structure, realize reflection using the different material layer of multilamellar refractive index, such as adopt the material of two kinds of different refractivities (for example
GaAs and AlAs of the 0.6 of refractive index, the Si of refractive index 2.2 and rare earth oxide REO) make multiple structure with reality
Now reflect；One kind is metal completely reflecting mirror structure, can directly deposit high conductivity and the metal of thermal conductivity realizes reflection, for example
Ag, Au, Cu, Ni, Al, Sn, Co, W and combinations thereof etc..Due to dorsum electrode layer (i.e. first electrode layer 100 contacting with reflecting layer
With the 4th electrode layer 112) thickness thicker, therefore reflecting layer has the function of radiating concurrently using metal completely reflecting mirror structure simultaneously, can
Conduct out with the heat producing inside transformer.
Wherein, first electrode layer 100 and the 4th electrode layer 112 are used as extraction electrode with input and output electric current, due to being not required to
Transparent to working light, therefore monolayer can be formed using the material such as metal, alloy, pottery, glass, plastics, conductive oxide
And/or multi-layer compound structure, the wherein metal of preferably low-resistivity, such as Cu.Preferably, can be by increasing metal electrode
The thickness of layer, to reduce resistance, simultaneously works as heat sink effect to radiate.
It is noted that because the input threshold voltage of this photoelectricity electric energy conversion module 2 and output voltage are decided by photoelectricity
Conversion layer and the material characteristic parameter of electro-optic conversion layer, such as energy gap, doping content etc., therefore by adjusting corresponding characteristic ginseng
Number is to realize transformation.It is possible to further according to actual needs, by adjusting electro-optic conversion layer 102 and photoelectric conversion layer 110
Number ratio, to improve transformation amplitude, realizes expected transformation, for example, as shown in figure 8, photoelectricity electric energy conversion module 2 includes an electricity
Light conversion layer 102 and two photoelectric conversion layer 110A and 110B, this structure is with respect to comprising identical single electro-optic conversion layer and list
The photoelectricity electric energy conversion module 2 of individual photoelectric conversion layer, increased the transformation of vertical stratification, therefore transformation ratio is bigger.
In one embodiment of the invention, by first electrode layer 100, it is formed at electric light on first electrode layer 100
Conversion layer 102 and be formed at the second electrode lay 104 on electro-optic conversion layer 102 as an electro-optic conversion structure；In the same manner
By the 3rd electrode layer 108, it is formed at the photoelectric conversion layer 110 on the 3rd electrode layer 108 and is formed at photoelectric conversion layer
The 4th electrode layer 112 on 110 is as a photovoltaic conversion structure.This Semi-conductor DC photoelectric transformer can also be vertical
Electro-optic conversion structure and photovoltaic conversion structure that multilamellar is alternately stacked are included on direction.Often adjacent electro-optic conversion structure and photoelectricity
Sealing coat is included, to improve DC voltage transformation ratio further between transformational structure.Wherein, multiple electro-optic conversion structure is (or many
Individual photovoltaic conversion structure) it is serially connected, the structure of each electro-optic conversion structure (or each photovoltaic conversion structure) may be referred to
State the structure described in embodiment.Fig. 9 show has two electro-optic conversion structures and an opto-electronic conversion knot in vertical direction
The Semi-conductor DC photoelectric transformer structural representation of structure, wherein, wraps between electro-optic conversion structure and photovoltaic conversion structure respectively
Include the first sealing coat 106 and the second sealing coat 107.It is noted that in the structure shown here, except first and last electric light (or photoelectricity)
Outside transformational structure, each electro-optic conversion structure middle and the first electrode layer of photovoltaic conversion structure and the 4th electrode layer can not be selected
With metal electrode, and from second and the 3rd electrode layer identical heavily doped semi-conducting material GaAs, GaN, GaP,
AlGaInP, AlGaInN, AlGaInAs, or conductive, transparent metal oxide materials ITO, SnO2, ZnO and combinations thereof, thus
Light is conducive to propagate.
The present invention provides a kind of photoelectricity electric energy conversion module 2, arranges electricity by the input in photoelectricity electric energy conversion module 2
Light conversion layer, the light radiation being produced using semiconductor electronic transition between the energy levels, unidirectional current is converted to light and is transmitted, in output
To convert light into as electric energy output, the voltage due to input and outfan unit cell depends on end setting photoelectric conversion layer respectively
In electro-optic conversion layer and photoelectric conversion layer properties of materials parameter and number, therefore this transformator can be directly realized by the change of DC voltage
Pressure.
In a preferred embodiment of the invention, as shown in Figure 10, semiconductor photoelectric/electrenergy energy conversion system also includes adjusting
Section module 3, adjustment module 3 can be fixed on substrate 1, also can be independently arranged.Adjustment module 3 and multiple photoelectricity electric energy moduluss of conversion
Total input (in) of block 2 is connected with total outfan (out), for the running parameter by monitoring total outfan, feedback regulation
The running parameter of total input, to maintain semiconductor photoelectric/electrenergy energy conversion system to carry out voltage stabilizing or pressure regulation, or makes photoelectricity electric energy
Modular converter 2 is operated on optimum state or particular job point.Figure 11 is the semiconductor photoelectric/electrenergy energy conversion system shown in Figure 10
Fundamental diagram.As shown in figure 11, adjustment module 3 detects the current/voltage of multiple photovoltaic conversion structure 22 of outfan first
Value, the micro-chip processor in subsequent adjustment module 3 does calculating process and draws command adapted thereto to probe value, and control element is according to instruction
Multiple electro-optic conversion structures 21 of input are regulated and controled.Specifically, regulating element can be power MOSFET, JFET, brilliant lock
Pipe, BJT, variable resistance etc..
In a preferred embodiment of the invention, photoelectricity electric energy conversion module 2 is platypelloid type device, and its input
It is in diagonal cross-distribution with outfan.Specifically, as shown in Figure 12 (a), photoelectricity electric energy conversion module 2 can be flattened rectangular piece
Shape, its input positive pole and input negative pole are located in a diagonal L 1 of main body, and its output cathode and output negative pole are located at main body
Another diagonal L 2 on.Preferably, input both positive and negative polarity, output both positive and negative polarity can also be separately positioned near top surface and bottom
The position in face.It should be noted that photoelectricity electric energy conversion module 2 can also be flat round sheet, flat round rectangle
Lamellar etc..Figure 12 (b) is the top-level view of the photoelectricity electric energy conversion module 2 shown in Figure 12 (a)；Figure 12 (c) is shown in Figure 12 (a)
Photoelectricity electric energy conversion module 2 bottom view.In this embodiment, the design of platypelloid type device, on the one hand increase work light
The transmission area of line, be on the other hand conducive to encapsulating integrated after semiconductor photoelectric/electrenergy energy conversion system radiating；Input and
The lead of outfan is in that diagonal is distributed, then be conducive to straight line between modules to connect, wiring is clear, the induction reactance that circuit produces
Less Deng disturbing, and between the electrode of inside modules, insulation distance is long, and insulation characterisitic is preferable.
In one embodiment of the invention, in order to extend output voltage, can show as Figure 13, multiple photoelectricity electric energy are changed
Module 2 is in sequential series.Multiple photoelectricity electric energy conversion module 2 are face-up and reverse side is arranged alternately upward, can pass through shorter,
Uncrossed lead is sequentially connected, and to reduce wire rod consumption, and reduces electromagnetic interference.
In one embodiment of the invention, in order to extend output, can show as Figure 14, first multiple photoelectricity electric energy be turned
After die change block 2 series connection, then several series arms are carried out parallel connection.Preferably, each series arm can also be gone here and there
Joint defence counterflow element D.When being not provided with back flow prevention element D, when some series arm fault because its own has certain resistance
Value can be considered a load, and now other series arms can be carried in this " load " above it is impossible to obtain normal electricity as power supply
Pressure output.After setting back flow prevention element D, due to its one-way conduction characteristic, can avoid the occurrence of above-mentioned it is ensured that normal
Voltage output.
In one embodiment of the invention, semiconductor photoelectric/electrenergy energy conversion system can be by adopting to input and outfan
With common ground or not altogether to form insulating power supply or non-isolated power supply.For common transformation system, insulating power supply is relatively difficult to achieve；
And the semiconductor photoelectric/electrenergy energy conversion system of the present invention due to its own feature it is easy to realize.
In one embodiment of the invention, as shown in figure 15, semiconductor photoelectric/electrenergy energy conversion system is in multiple photoelectricity electricity
Between modular converter 2, a plurality of outfan lead can be set, export different output voltages it is adaptable to be multiple different operatings simultaneously
The situation that the equipment of voltage is powered.
Semiconductor photoelectric/electrenergy energy conversion system according to embodiments of the present invention at least has the advantage that：
(1) this system includes multiple photoelectricity electric energy conversion module, and each module itself not only can be realized DC-DC electric energy and turn
Change, the conversion of DC-AC, AC-DC or AC-AC electric energy can also be realized, and power and/or electricity are realized by flexible connection in series-parallel connection
Companding exhibition.
(2) the photoelectricity electric energy conversion module in this system and substrate are all flat pattern, and specific surface area is big, beneficial to radiating.
(3) this system adopt diagonal distribution of electrodes encapsulate, succinctly attractive in appearance between line do not intersect, be that assembly working brings
Convenient, the voltage difference between adjacent photo electric energy conversion module can be reduced simultaneously, increase the insulation distance between electrode, thus
Improve insulation characterisitic, can effectively prevent from puncturing.
(4), after the input circuit of this system provides the input voltage of a fixation, output circuit can set multiple taps,
Export different voltages simultaneously, meet different use demands.
In the description of this specification, reference term " embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy describing with reference to this embodiment or example
Point is contained at least one embodiment or the example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Necessarily refer to identical embodiment or example.And, the specific features of description, structure, material or feature can be any
One or more embodiments or example in combine in an appropriate manner.
Although embodiments of the invention have been shown and described above it is to be understood that above-described embodiment is example
Property it is impossible to be interpreted as limitation of the present invention, those of ordinary skill in the art is in the principle without departing from the present invention and objective
In the case of above-described embodiment can be changed within the scope of the invention, change, replace and modification.
Claims (10)
1. a kind of semiconductor photoelectric/electrenergy energy conversion system is it is characterised in that include：
Substrate；
Multiple photoelectricity electric energy conversion module, are serially connected between the plurality of photoelectricity electric energy conversion module and/or in parallel, to realize
Voltage and/or the extension of power, wherein, described photoelectricity electric energy conversion module further includes：
Sealing coat, described sealing coat is transparent to the working light of described photoelectricity electric energy conversion module；
It is formed at the one or more electro-optic conversion structure on described sealing coat, for input electric energy is converted to described work
Make light transmitting；With
It is formed at the one or more photovoltaic conversion structure on described sealing coat, defeated for being converted to described working light
Go out electric energy, wherein, described photoelectricity electric energy conversion module is flat pattern device, and the input of described photoelectricity electric energy conversion module
End and outfan are in diagonal cross-distribution.
2. semiconductor photoelectric/electrenergy energy conversion system as claimed in claim 1 it is characterised in that wherein, tie by described opto-electronic conversion
Between the absorption spectrum of structure and described electro-optic conversion structure emission spectrum, frequency spectrum mates.
3. semiconductor photoelectric/electrenergy energy conversion system as claimed in claim 1 or 2 is it is characterised in that described photoelectricity electric energy is changed
Module is DC-DC type photoelectricity electric energy conversion module, AC-AC type photoelectricity electric energy conversion module, AC-DC type photoelectricity electric energy conversion module
Or DC-AC type photoelectricity electric energy conversion module.
4. semiconductor photoelectric/electrenergy energy conversion system as claimed in claim 1 or 2 is it is characterised in that described photoelectricity electric energy is changed
In module, described electro-optic conversion structure includes light emitting diode, laser diode or organic luminescent device.
5. semiconductor photoelectric/electrenergy energy conversion system as claimed in claim 1 or 2 is it is characterised in that described photoelectricity electric energy is changed
In module, described photovoltaic conversion structure includes semiconductor photovoltaic cells or organic material photovoltaic cell.
6. semiconductor photoelectric/electrenergy energy conversion system as claimed in claim 1 or 2 is it is characterised in that described photoelectricity electric energy is changed
In module, described sealing coat is insulant, passes through insulant between described electro-optic conversion structure, described electro-optic conversion structure
The insulation characterisitic of itself is isolated；Or, described sealing coat is semi-conducting material, described electro-optic conversion structure and described isolation
Between layer, isolated by reverse biased pn junction structure between described photovoltaic conversion structure and described sealing coat.
7. semiconductor photoelectric/electrenergy energy conversion system as claimed in claim 1 or 2 is it is characterised in that described semiconductor optoelectronic is electric
Can converting system also include：
Adjustment module, described adjustment module is connected with total input of the plurality of photoelectricity electric energy conversion module and total outfan,
For the running parameter by monitoring described total outfan, the running parameter of total input described in feedback regulation.
8. semiconductor photoelectric/electrenergy energy conversion system as claimed in claim 1 or 2 is it is characterised in that described photoelectricity electric energy is changed
In module, the coefficient of refraction coupling of the layers of material on light propagation path.
9. semiconductor photoelectric/electrenergy energy conversion system as claimed in claim 1 or 2 is it is characterised in that described photoelectricity electric energy is changed
In module, also include optical trap, described optical trap is used for light is limited in inside described photoelectricity electric energy conversion module.
10. semiconductor photoelectric/electrenergy energy conversion system as claimed in claim 1 or 2 is it is characterised in that described sealing coat includes
Al2O3, AlN, SiO2, MgO, Si3N4, BN, diamond, LiAlO2, LiGaO2, GaAs, SiC, TiO2, ZrO2, SrTiO3, Ga2O3,
ZnS, SiC, MgAl2O4, LiNbO3, LiTaO3, yttrium-aluminium-garnet (YAG) crystal, KNbO3, LiF, MgF2, BaF2, GaF2, LaF3,
One of BeO, GaP, GaN and rare earth oxide (REO) and combinations thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210451342.6A CN103426967B (en) | 2011-11-10 | 2012-11-12 | Semiconductor photoelectric/electric energy conversion system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110356005.4 | 2011-11-10 | ||
| CN2011103560054A CN102496649A (en) | 2011-11-10 | 2011-11-10 | Semi-conductor DC photoelectric transformer |
| CN2011103560054 | 2011-11-10 | ||
| CN201210326705.3 | 2012-09-05 | ||
| CN201210326705 | 2012-09-05 | ||
| CN2012103267053 | 2012-09-05 | ||
| CN201210395196X | 2012-10-17 | ||
| CN201210395196.X | 2012-10-17 | ||
| CN201210395196 | 2012-10-17 | ||
| CN201210451342.6A CN103426967B (en) | 2011-11-10 | 2012-11-12 | Semiconductor photoelectric/electric energy conversion system |
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| CN103426967A CN103426967A (en) | 2013-12-04 |
| CN103426967B true CN103426967B (en) | 2017-02-22 |
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| CN201210451342.6A Active CN103426967B (en) | 2011-11-10 | 2012-11-12 | Semiconductor photoelectric/electric energy conversion system |
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| CN (1) | CN103426967B (en) |
| TW (1) | TW201320561A (en) |
| WO (1) | WO2013067968A1 (en) |
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| CN114420003B (en) * | 2022-01-17 | 2024-01-02 | 深圳市思坦科技有限公司 | Integrated LED structure and preparation method |
| CN116488487B (en) * | 2023-04-06 | 2023-11-17 | 广东工业大学 | Modulation method of alternating-current multi-level photon electric energy converter topology |
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| JP2740435B2 (en) * | 1992-12-10 | 1998-04-15 | 松下電工株式会社 | Solid state relay |
| JP4885234B2 (en) * | 2006-10-23 | 2012-02-29 | パナソニック株式会社 | Optical space transmission system using visible light and infrared light |
| CN201893730U (en) * | 2010-11-30 | 2011-07-06 | 中国工程物理研究院流体物理研究所 | Electric energy isolated photovoltaic power supply device |
| CN102158109A (en) * | 2011-03-17 | 2011-08-17 | 上海威特力焊接设备制造股份有限公司 | Photovoltaic synchronization inverter system |
| CN102427094B (en) * | 2011-11-10 | 2013-08-28 | 郭磊 | Semiconductor direct current photoelectric transformer |
| CN102569489B (en) * | 2012-01-20 | 2016-01-27 | 郭磊 | A kind of semiconductor direct current transformer |
| CN202523745U (en) * | 2011-11-10 | 2012-11-07 | 郭磊 | Semiconductor DC photoelectric transformer |
| CN202503017U (en) * | 2011-11-10 | 2012-10-24 | 郭磊 | Semiconductor direct current photoelectric transformer |
| CN102496649A (en) * | 2011-11-10 | 2012-06-13 | 郭磊 | Semi-conductor DC photoelectric transformer |
| CN102569488B (en) * | 2012-01-20 | 2016-01-27 | 郭磊 | A kind of semiconductor direct current transformer |
-
2012
- 2012-11-09 WO PCT/CN2012/084416 patent/WO2013067968A1/en active Application Filing
- 2012-11-12 CN CN201210451342.6A patent/CN103426967B/en active Active
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| WO2013067968A1 (en) | 2013-05-16 |
| TW201320561A (en) | 2013-05-16 |
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