CN102427094B - Semiconductor direct current photoelectric transformer - Google Patents
Semiconductor direct current photoelectric transformer Download PDFInfo
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- CN102427094B CN102427094B CN 201110355999 CN201110355999A CN102427094B CN 102427094 B CN102427094 B CN 102427094B CN 201110355999 CN201110355999 CN 201110355999 CN 201110355999 A CN201110355999 A CN 201110355999A CN 102427094 B CN102427094 B CN 102427094B
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Abstract
The invention provides a semiconductor direct current photoelectric transformer which comprises an isolating layer, a plurality of electrooptical conversion structures and a plurality of photoelectric conversion structures, wherein the electrooptical conversion structures are formed at one side of the isolating layer; the electrooptical conversion structures are mutually connected in series; each electrooptical conversion structure comprises a first electrode layer, an electrooptical conversion layer formed on the first electrode layer and a second electrode layer formed on the electrooptical conversion layer; the photoelectric conversion structures are formed at the other side of the isolating layer; the photoelectric conversion structures are mutually connected in series; each photoelectric conversion structure comprises a third electrode layer, a photoelectric conversion layer formed on the third electrode layer and a fourth electrode layer formed on the photoelectric conversion layer; and the isolating layer, the second electrode layer and the third electrode layer are transparent to working light rays emitted by the electrooptical conversion layer. The semiconductor direct current photoelectric transformer of the embodiment of the invention has the advantages of high-voltage resistance, no electromagnetic radiation, no coil structure, no influence by solar radiation, and the like.
Description
Technical field
The present invention relates to current/voltage transformation field, particularly a kind of semiconductor direct current opto-electronic transformers.
Background technology
In the daily use, traditional electric power carries the main alternating current that adopts to transmit, and mainly is because the alternating current transformation is easy, realizes the remote distance power transmission easily, and with the low-voltage distribution power transformation of user side.But adopt ac transmission to have very big defective: at first, the induction reactance effect that alternating current produces can not be ignored, and especially to high-frequency alternating current, its induction reactance effect can produce greatly influence to alternating current; Simultaneously, because the existence of skin effect makes that the effective area of alternating current transfer wire is less, can a large amount of electric energy of loss in the long distance power transmission process.Secondly, AC power line generally all is overhead wire, and submerged cable and underground cable are also arranged, and " shunt capacitance " that they and cable produce causes alternating current " shunting ", causes the energy loss in the transmission of electricity process.And in the ac transmission process, whole electrical network needs synchronous operation, and all electricity generation systems will to guarantee power grid operation, exchange the Phase synchronization difficulty synchronously in same phase place, and the variation of an electricity generation system will influence the stable of whole electrical network.In addition, in small-power electronics product was used, traditional dc low-voltage becomes high direct voltage often needed to become earlier AC low-tension, become ac high-voltage with coil transformer again, become the method for high direct voltage again, this method circuit complexity, element is many, and volume is big, and cost height and conversion efficiency are low.
Compare with ac transmission, direct current transportation has plurality of advantages:
1, the circuit cost is low: for overhead transmission line, the direct current one pole only needs one, and two of bipolar need are more economical.Every lead can move as an independent loop simultaneously, and can adopt the earth or seawater to do the loop.
2, loss is little: DC line does not have reactive loss, does not have charge power and charging current, and the direct current overhead transmission line does not have skin effect, and its corona loss is all little than exchanging overhead transmission line with radio interference.And cable line can move under higher electric potential gradient.
3, operation of power networks is more stable: itself has modulation function direct current, can react according to the requirement of system, moves more stable.Can get in touch with the AC system of two different frequencies, the power on the interconnection is easy to control.
But present direct current transportation is direct current in this link of transmission of electricity only, and generating is still interchange.In the origin or beginning of transmission line converter being arranged is direct current with exchange conversion, becomes direct current again interchange again to line end.Present this converter is made difficulty, expensive, so the direct current transportation range of application of present stage mainly is confined to remote large capacity transmission and submarine cable transmission of electricity etc., has greatly limited the application of direct current transportation.For direct current transportation is widely used, development direct current transformation technology and development direct current transformation device are the key issues that needs to be resolved hurrily.
Summary of the invention
Purpose of the present invention is intended to solve at least one of above-mentioned technological deficiency, particularly proposes a kind of semiconductor direct current opto-electronic transformers.
The invention provides a kind of semiconductor direct current opto-electronic transformers, comprising: separator; Be formed on a plurality of electric light transformational structures of described separator one side, at least a portion in described a plurality of electric light transformational structures is connected mutually, and each electric light transformational structure comprises: first electrode layer; Be formed on the electric light conversion layer on described first electrode layer; Be formed on the second electrode lay on the described electric light conversion layer; Be formed on a plurality of opto-electronic conversion structures of described separator opposite side, at least a portion in described a plurality of opto-electronic conversion structures is connected mutually, and each opto-electronic conversion structure comprises: the third electrode layer; Be formed on the photoelectric conversion layer on the described third electrode layer; Be formed on the 4th electrode layer on the described photoelectric conversion layer; Wherein, described separator, described the second electrode lay and described third electrode layer are transparent to the work light that described electric light conversion layer sends.
Semiconductor direct current opto-electronic transformers also comprises: first reflector between described first electrode layer and described electric light conversion layer according to an embodiment of the invention; And second reflector between described the 4th electrode layer and described photoelectric conversion layer.Described first and second reflector light of will working is limited between described electric light conversion layer and the described photoelectric conversion layer and comes back reflective, prevents that light from revealing, and improves light wave transmissions efficient.
Commutator transformer according to an embodiment of the invention, described first reflector and second reflector are Bragg mirror or metal completely reflecting mirror.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, described first electrode layer and described the 4th electrode layer are metal electrode.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, described insolated layer materials is Al
2O
3, AlN, SiO
2, MgO, Si
3N
4, BN, diamond, LiAlO
2, LiGaO
2, semi-insulated GaAs, SiC or GaP, a kind of and combination among the GaN, and rare earth oxide REO and combination thereof, so that described separator is transparent to described work light, insulation characterisitic is good, and is high pressure resistant anti-breakdown.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, the material refraction coefficient echelon of described electric light conversion layer, described the second electrode lay, described separator, described third electrode layer and described photoelectric conversion layer increases.The implication of described " echelon increase " is: the material refraction coefficient that does not require each described layer all progressively increases with respect to its previous described layer, material refraction coefficient of some described layer can be identical with its previous described layer, and namely the material refraction coefficient integral body of described each layer is and increases progressively trend and get final product.(comprise the light of described electric light conversion layer generation and the light of described each electrode layer and each reflective layer reflects) when avoiding light to transmit along described electric light conversion coating to described photoelectric conversion layer direction on the one hand total reflection takes place, to improve the efficiency of transmission of light; (mainly comprising third and fourth electrode of described photoelectric conversion layer and the light of second reflective layer reflects) generation emission full when impelling light to transmit from the described electric light conversion layer of described opto-electronic conversion course direction on the other hand, so that more light is limited in the photoelectricity conversion coating, be converted to electric efficient thereby improve light.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, the material refraction coefficient of described electric light conversion layer, described the second electrode lay, described separator, described third electrode layer and described photoelectric conversion layer approaches.Inner layers of material is preferably the identical or close material of refraction coefficient to reduce reflection of light and loss.Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, in described electric light conversion layer, described the second electrode lay, described separator, described third electrode layer and the described photoelectric conversion layer at least one has roughened surface or photon crystal structure, to increase light transmission, reduce the total reflection of light.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, the photon energy of the work light that the energy of the energy gap correspondence of described the second electrode lay, described separator and described third electrode layer material sends greater than described electric light conversion layer, to prevent described the second electrode lay, described separator and described third electrode layer to the absorption of described work light, improve light wave transmissions efficient.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, described photoelectric conversion layer is LED structure or laser structure, wherein, described LED structure comprises resonance LED structure.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, the material of described electric light conversion layer comprises the AlGaInP of reddish yellow light, the InGaN of the GaN of ultraviolet and InGaN, royal purple light and AlGaInN, ZnO, the AlGaInAs of ruddiness or infrared light, GaAS, InGaAs and other III family compound nitrogen series, the As of III family system or phosphorus series compound semi-conducting material and combination thereof.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, the material of described photoelectric conversion layer comprises AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, InGaP, other III-V family direct energy-gap semiconductor material and combination thereof.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, the band structure of described electric light conversion layer and described photoelectric conversion layer is complementary so that the highest wave band of the wave band of the work light that described electric light conversion layer sends and described photoelectric conversion layer absorption efficiency is complementary, to reach the highest light-wave energy efficiency of transmission.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, described the second electrode lay and described third electrode layer are heavily doped semi-conducting material GaAs, GaN, GaP, AlGaInP, AlGaInN, AlGaInAs, perhaps conductive, transparent metal oxide materials ITO, SnO
2, ZnO and combination thereof.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, be filled with the reflective medium material between described a plurality of electric light transformational structure, and be filled with the reflective medium material between described a plurality of opto-electronic conversion structures, so that work light is limited in the layer of propagating, prevent the light leakage, increase conversion efficiency.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, wherein, a described electric light transformational structure comprises the electrooptic switching element of a plurality of parallel connections, or described opto-electronic conversion structure comprises the photoelectric conversion unit of a plurality of parallel connections.With photoelectricity and/or electrooptic switching element elder generation parallel connection series system again, with the influence of the resistance that reduces described the second electrode lay and third electrode layer, thereby reduce energy loss by this.
Semiconductor direct current opto-electronic transformers according to an embodiment of the invention, comprise electric light transformational structure and opto-electronic conversion structure that multilayer is alternately piled up in vertical direction, comprise separator between every adjacent electric light transformational structure and the opto-electronic conversion structure, this structure can further improve the direct voltage transformation ratio.In this structure, first electrode layer and the 4th electrode layer of middle each electric light transformational structure and opto-electronic conversion structure can be heavily doped semi-conducting material GaAs, GaN, GaP, AlGaInP, AlGaInN, AlGaInAs, perhaps conductive, transparent metal oxide materials ITO, SnO
2, ZnO and combination thereof.
The invention provides a kind of semiconductor direct current opto-electronic transformers, by the input in semiconductor direct current opto-electronic transformers the electric light conversion layer is set, the light radiation that utilizes the semiconductor electronic transition between the energy levels to produce, direct current is converted to light to be transmitted, photoelectric conversion layer is set light is converted into direct current output at output, the voltage of input and output unit cell depends on electric light conversion layer in its electric light transformational structure and the photoelectric conversion layer properties of materials parameter in the opto-electronic conversion structure respectively, adopt the electric light transformational structure of varying number and opto-electronic conversion structure to connect respectively at input and output, utilize the number of electric light transformational structure and opto-electronic conversion structure than the transformation that realizes direct voltage.This semiconductor direct current opto-electronic transformers also has high pressure resistant, electromagnetic-radiation-free, advantage such as no loop construction is not subjected to the influence of solar radiation and solar windstorm etc., and safe and reliable, volume is little, and the life-span is long, and is in light weight, convenient for installation and maintenance.
The aspect that the present invention adds and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or the additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 is the fundamental diagram of the semiconductor direct current opto-electronic transformers of the embodiment of the invention;
Fig. 2 is the structural representation of the semiconductor direct current opto-electronic transformers of the embodiment of the invention;
Fig. 3 is the wiring cutaway view of the semiconductor direct current opto-electronic transformers structure of the embodiment of the invention;
Fig. 4 is the wiring vertical view of the semiconductor direct current opto-electronic transformers structure of the embodiment of the invention;
Fig. 5 is the structural representation of the semiconductor direct current opto-electronic transformers that comprises a plurality of photoelectric conversion units in parallel and a plurality of electrooptic switching elements in parallel of the embodiment of the invention;
Fig. 6 is the structural representation of the semiconductor direct current opto-electronic transformers that comprises electric light transformational structure that multilayer is alternately piled up and opto-electronic conversion structure in vertical direction.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein identical or similar label is represented identical or similar elements or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
Disclosing hereinafter provides many different embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter parts and the setting to specific examples is described.Certainly, they only are example, and purpose does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and purpose clearly, itself not indicate the relation between the various embodiment that discuss of institute and/or the setting.In addition, various specific technology and the examples of material that the invention provides, but those of ordinary skills can recognize the property of can be applicable to of other technologies and/or the use of other materials.In addition, first feature described below second feature it " on " structure can comprise that first and second features form the embodiment of direct contact, can comprise that also additional features is formed on the embodiment between first and second features, such first and second features may not be direct contacts.
The invention provides a kind of semiconductor direct current opto-electronic transformers, its operation principle as shown in Figure 1, pass through at input input direct voltage V1 on the one hand, in electro-optical conversioning device, to inject the compound generation photon of charge carrier, photon penetrated separator and transferred to the photonic layer conversion layer, produced different charge carriers to excite in electrooptical device, and separated by internal electric field, output dc voltage V2, thus utilize light wave to realize energy transmission and transformation.On the other hand, by electric light transformational structure and the opto-electronic conversion structure of the different numbers of connecting respectively at input and output, utilize the number of electric light transformational structure and opto-electronic conversion structure than realizing direct current transformation.For example, suppose that the electric light transformational structure is m, the opto-electronic conversion structure is n, then output voltage/input voltage=(n*V2)/(m*V1).
Figure 2 shows that the structural representation according to the semiconductor direct current opto-electronic transformers of the embodiment of the invention, Figure 3 shows that according to the wiring cutaway view of the semiconductor direct current opto-electronic transformers structure of the embodiment of the invention, Figure 4 shows that the corresponding wiring vertical view of Fig. 3.As shown in Figure 2, this commutator transformer comprises: separator 106; Be formed on a plurality of electric light transformational structures 1 of separator 106 1 sides, at least a portion in described a plurality of electric light transformational structures 1 is connected mutually, and each electric light transformational structure 1 comprises: first electrode layer 100; Be formed on the electric light conversion layer 102 on first electrode layer 100; Be formed on the second electrode lay 104 on the electric light conversion layer 102; Be formed on a plurality of opto-electronic conversion structures 2 of separator 106 opposite sides, at least a portion in described a plurality of opto-electronic conversion structures 2 is connected mutually, and each opto-electronic conversion structure 2 comprises: third electrode layer 108; Be formed on the photoelectric conversion layer 110 on the third electrode layer 108; Be formed on the 4th electrode layer 112 on the photoelectric conversion layer 110.In embodiments of the present invention, connect by lead A respectively between a plurality of electric light transformational structures 1, between a plurality of opto-electronic conversion structure 2, described a plurality of electric light transformational structure 1 is drawn input I1 and I2 respectively in the series connection back mutually in two ends, described a plurality of opto-electronic conversion structure 2 is drawn output O1 and O2 respectively in two ends in the series connection back mutually, as shown in Figure 3 and Figure 4.
Wherein, electric light conversion layer 102 is converted to light in order to the direct current with input, sends the work light of necessary wavelength scope.The combination of the one or more wave bands work light comprises from the ultraviolet light of 100nm to the whole spectral region of the infrared light of 10um, be preferably unifrequent light, the purple light of the blue light of the ruddiness of 620nm, 460nm, 380nm for example is to be conducive to using ripe prior art to make the electric light conversion layer.For example electric light conversion layer 102 can adopt the structure and material with high-quantum efficiency, high electro-optical efficiency.Particularly, can generally comprise active layer for LED structure or laser structure, limiting layer, electric current dispersion layer, structures such as PN junction, wherein active layer can be multi-quantum pit structure, and the electric light conversion layer of laser structure also comprises resonant cavity, and the LED structure comprises resonance LED structure.The material of electric light conversion layer 102 is selected based on material self-characteristic (as defect concentration, band structure etc.) and needed light wave characteristic (as wave-length coverage), for example can adopt the AlGaInP of reddish yellow light, the AlGaInAs of the InGaN of the GaN of ultraviolet and InGaN, royal purple light and AlGaInN, ZnO, ruddiness or infrared light, GaAS, InGaAs and other III family compound nitrogen series, the As of III family system or phosphorus series compound semi-conducting material and combination thereof, the material that wherein defect concentration is low, light conversion efficiency is high (as AlGaInP, InGaN, GaN) is preferred material.
Wherein, photoelectric conversion layer 110 is in order to be converted to light electricity to realize transformation.The material of photoelectric conversion layer 110 comprises AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, InGaP, other III-V family direct energy-gap semiconductor material and combination thereof.Electric light conversion layer 102 generally can be selected the direct energy-gap semiconductor material for use, the band structure of its band structure and photoelectric conversion layer 110 is complementary so that the highest wave band of the wave band of the work light that electric light conversion layer 102 sends and photoelectric conversion layer 110 absorption efficiencies is complementary, to reach the highest light-wave energy conversion efficiency.
Wherein, the work light that sends of separator 106, the second electrode lay 104 and 108 pairs of electric light conversion layer 102 of third electrode layer is transparent.In embodiments of the present invention, the photon energy of the work light that the energy of the energy gap correspondence of the second electrode lay 104, separator 106 and third electrode layer 108 material sends greater than electric light conversion layer 102, to prevent the absorption of the second electrode lay 104,106 layers of isolation and 108 pairs of described work light of third electrode layer, improve the light wave conversion efficiency.
In addition, the material refraction coefficient of the material refraction coefficient of separator 106, the second electrode lay 104 and third electrode layer 108 and electric light conversion layer 102 and photoelectric conversion layer 110 coupling is to avoid in light communication process total reflection taking place at the interface.Total reflection takes place when light enters the refraction coefficient materials with smaller from the bigger material of refraction coefficient because and if only if, so in preferred embodiment of the present invention, the material refraction coefficient of the second electrode lay 104, separator 106, third electrode layer 108 and photoelectric conversion layer 110 is identical, full emission takes place at the interface when avoiding light to transfer to photoelectric conversion layer 110 from electric light conversion layer 102 at each; In preferred embodiment of the present invention, the material refraction coefficient echelon of the second electrode lay 104, separator 106, third electrode layer 108 and photoelectric conversion layer 110 increases.The implication of described " echelon increase " is: the material refraction coefficient of each described layer is not less than the material refraction coefficient of its previous described layer, the material refraction coefficient that is some described layer can be identical with its previous described layer, but the material refraction coefficient integral body of described each layer is and increases progressively trend; In preferred embodiment of the present invention, the material refraction coefficient of the second electrode lay 104, separator 106, third electrode layer 108 and photoelectric conversion layer 110 increases gradually.In another embodiment, the material refraction coefficient of the second electrode lay 104, separator 106, third electrode layer 108 and photoelectric conversion layer 110 approaches.By above-mentioned each embodiment, avoid on the one hand light (to comprise light that electric light conversion layer 102 produces and the light of described each electrode layer and each reflective layer reflects) along electric light conversion coating 102 to photoelectric conversion layer during the transmission of 110 directions total reflection takes place, to improve the efficiency of transmission of light; (mainly comprising third and fourth electrode of photoelectric conversion layer 110 and the light of second reflective layer reflects) generation emission full when impelling light to transmit from photoelectric conversion layer 110 to electric light conversion layer 102 directions on the other hand, so that more light is limited in the photoelectricity conversion coating 110, be converted to electric efficient thereby improve light.
In addition, the present invention can also adopt different material layer at the interface by roughening or the rule figure such as photon crystal structure wait to lower total reflection.So in the preferred embodiment of the invention, at least one in electric light conversion layer 102, the second electrode lay 104, separator 106, third electrode layer 108 and the photoelectric conversion layer 110 has roughened surface, to increase light transmission, reduce the total reflection of light.
In preferred embodiment of the present invention, also comprise between first electrode layer 100 and the electric light conversion layer 102 between first reflector, 101, the four electrode layers 112 and the photoelectric conversion layer 110 also comprising second reflector 111, as shown in Figure 2.Described first and second reflector are limited in light between electric light conversion layer 102 and the photoelectric conversion layer 110 comes back reflective, reveals to prevent light, improves light wave transmissions efficient.The material require in reflector satisfies work light reflection efficiency height, requirements such as material property is stable, interface contact resistance is low, good conductivity, specifically can realize by following dual mode: a kind of is the Bragg mirror structure, utilize the different material layer of multilayer refractive index to realize reflection, such as the material that adopts two kinds of different refractivities, for example 0.6 the GaAs that differs of refractive index and AlAs, refractive index differ 2.2 Si and rare earth oxide REO) make sandwich construction to realize reflection; A kind of is metal completely reflecting mirror structure, and directly the metal of deposit high conductivity and thermal conductivity is realized reflection, for example Ag, Au, Cu, Ni, Al, Sn, Co, W and combination thereof etc.Since thicker with the thickness of the contacted dorsum electrode layer in reflector (i.e. first electrode layer 100 and the 4th electrode layer 112), so the reflector adopts metal completely reflecting mirror structure to have the function of heat radiation simultaneously concurrently, the inner heat that produces of transformer can be conducted out.
Wherein, first electrode layer 100 and the 4th electrode layer 112 are used as extraction electrode with the input and output electric current, owing to do not need work light transparent, so can adopt materials such as metal, alloy, pottery, glass, plastics, conductive oxide to form individual layer and/or multi-layer compound structure, wherein be preferably the metal of low-resistivity, for example Cu.Preferably, the thickness that can pass through to increase metal electrode layer plays heat sink work in order to heat radiation simultaneously to reduce resistance.
Wherein, be filled with reflective medium material (not shown among Fig. 2 and Fig. 3) between a plurality of electric light transformational structures 1, and be filled with reflective medium material (not shown among Fig. 2 and Fig. 3) between a plurality of opto-electronic conversion structures 2, so that work light is limited in the layer of propagating, prevent the light leakage, increase conversion efficiency, play the effect that electric insulation is isolated simultaneously.
When through-put power bigger and when causing the cellar area of single electric light transformational structure 1 and/or single opto-electronic conversion structure 2 bigger, because the resistivity of the heavily-doped semiconductor material that the second electrode lay 104 and third electrode layer 108 are used or ITO etc. is all higher, so the long meeting of electrode layer length causes bigger resistance, produce big energy consumption, at this situation, the embodiment of the invention proposes semiconductor direct current opto-electronic transformers structure as shown in Figure 5, be about to bigger single electric light transformational structure 1 and be divided into a plurality of less electrooptic switching elements, the electrooptic switching element parallel connection (shown in frame of broken lines among Fig. 5) that the metal of recycling low-resistivity is less with these, and then connect with other electric light transformational structure 1, its syndeton and method can adopt multilayer interconnect structure in the IC technology.Can in like manner realize with reference to electric light transformational structure 1 for opto-electronic conversion structure 2., can reduce the influence of the resistance of the second electrode lay and third electrode layer, thereby reduce energy loss photoelectricity (electric light) converting unit elder generation parallel connection series system again by this.
In one embodiment of the invention, this semiconductor direct current opto-electronic transformers can also comprise electric light transformational structure 1 and the opto-electronic conversion structure 2 that multilayer is alternately piled up in vertical direction, comprise separator 106 between every adjacent electric light transformational structure 1 and the opto-electronic conversion structure 2, with further raising direct voltage transformation ratio.Wherein, multilayer electric light transformational structure 1 (or Heterolamellar photovoltaic transformational structure 2) is series connection mutually, and the structure of every layer of electric light transformational structure 1 (or every layer of opto-electronic conversion structure 2) can be with reference to the described structure of above-described embodiment.Figure 6 shows that the semiconductor direct current opto-electronic transformers structural representation that has two-layer electric light transformational structure 1 and one deck opto-electronic conversion structure 2 in vertical direction.Be pointed out that, in this structure, except electric light (or photoelectricity) transformational structure of the first floor and end layer, first electrode layer and the 4th electrode layer of middle each electric light transformational structure and opto-electronic conversion structure can not be selected metal electrode for use, and select heavily doped semi-conducting material GaAs, GaN, the GaP identical with the third electrode layer with second for use, AlGaInP, AlGaInN, AlGaInAs, perhaps conductive, transparent metal oxide materials ITO, SnO
2, ZnO and combination thereof, propagate thereby be conducive to light.
The invention provides a kind of semiconductor direct current opto-electronic transformers, on the one hand because the input threshold voltage of this semiconductor direct current opto-electronic transformers individual unit and the material characteristic parameter that output voltage is decided by photoelectric conversion layer and electric light conversion layer, as material category, emergent property, energy gap, doping content etc., so by regulating corresponding characterisitic parameter to realize transformation; By electric light transformational structure and the opto-electronic conversion structure of the different numbers of connecting respectively at input and output, utilize the number of electric light transformational structure and opto-electronic conversion structure than realizing direct current transformation on the other hand.
Although illustrated and described embodiments of the invention, for the ordinary skill in the art, be appreciated that without departing from the principles and spirit of the present invention and can carry out multiple variation, modification, replacement and modification to these embodiment that scope of the present invention is by claims and be equal to and limit.
Claims (20)
1. a semiconductor direct current opto-electronic transformers is characterized in that, comprising:
Separator;
Be formed on a plurality of electric light transformational structures of described separator one side, at least a portion in described a plurality of electric light transformational structures is connected mutually, and each electric light transformational structure comprises:
First electrode layer;
Be formed on the electric light conversion layer on described first electrode layer;
Be formed on the second electrode lay on the described electric light conversion layer;
Be formed on a plurality of opto-electronic conversion structures of described separator opposite side, at least a portion in described a plurality of opto-electronic conversion structures is connected mutually, and each opto-electronic conversion structure comprises:
The third electrode layer;
Be formed on the photoelectric conversion layer on the described third electrode layer;
Be formed on the 4th electrode layer on the described photoelectric conversion layer;
Wherein, described separator, described the second electrode lay and described third electrode layer are transparent to the work light that described electric light conversion layer sends.
2. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, also comprises:
First reflector between described first electrode layer and described electric light conversion layer; And
Second reflector between described the 4th electrode layer and described photoelectric conversion layer.
3. semiconductor direct current opto-electronic transformers as claimed in claim 2 is characterized in that, described first reflector and second reflector are Bragg mirror or metal completely reflecting mirror.
4. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, described first electrode layer and described the 4th electrode layer are metal electrode.
5. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, described separator is Al
2O
3, AlN, SiO
2, MgO, Si
3N
4, BN, diamond, LiAlO
2, LiGaO
2, semi-insulated GaAs, SiC or GaP, a kind of and combination among the GaN.
6. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, described separator is rare earth oxide REO and combination thereof.
7. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, the material refraction coefficient echelon of described electric light conversion layer, described the second electrode lay, described separator, described third electrode layer and described photoelectric conversion layer increases.
8. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, the material refraction coefficient of described electric light conversion layer, described the second electrode lay, described separator, described third electrode layer and described photoelectric conversion layer approaches.
9. semiconductor direct current opto-electronic transformers as claimed in claim 1, it is characterized in that at least one in described electric light conversion layer, described the second electrode lay, described separator, described third electrode layer and the described photoelectric conversion layer has roughened surface or photon crystal structure.
10. semiconductor direct current opto-electronic transformers as claimed in claim 1, it is characterized in that the photon energy of the work light that the energy of the energy gap correspondence of described the second electrode lay, described separator and described third electrode layer material sends greater than described electric light conversion layer.
11. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that described photoelectric conversion layer is LED structure, laser structure, wherein, described LED structure comprises resonance LED structure.
12. semiconductor direct current opto-electronic transformers as claimed in claim 1, it is characterized in that, the material of described electric light conversion layer comprises the AlGaInP of reddish yellow light, the InGaN of the GaN of ultraviolet and InGaN, royal purple light and AlGaInN, ZnO, the AlGaInAs of ruddiness or infrared light, GaAS, InGaAs and combination thereof.
13. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, the material of described electric light conversion layer comprises III family compound nitrogen series, arsenic system of III family, phosphorus series compound semi-conducting material and combination thereof.
14. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that the material of described photoelectric conversion layer comprises AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, InGaP.
15. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, the material of described photoelectric conversion layer comprises III-V family direct energy-gap semiconductor material and combination thereof.
16. semiconductor direct current opto-electronic transformers as claimed in claim 1, it is characterized in that the band structure of described electric light conversion layer and described photoelectric conversion layer is complementary so that the highest wave band of the wave band of the work light that described electric light conversion layer sends and described photoelectric conversion layer absorption efficiency is complementary.
17. semiconductor direct current opto-electronic transformers as claimed in claim 1, it is characterized in that, described the second electrode lay and described third electrode layer are heavily doped semi-conducting material GaAs, GaN, GaP, AlGaInP, AlGaInN, AlGaInAs, perhaps conductive, transparent metal oxide materials ITO, SnO
2, ZnO and combination thereof.
18. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that, is filled with the reflective medium material between described a plurality of electric light transformational structures, and is filled with the reflective medium material between described a plurality of opto-electronic conversion structures.
19. semiconductor direct current opto-electronic transformers as claimed in claim 1 is characterized in that a described electric light transformational structure comprises the electrooptic switching element of a plurality of parallel connections, or described opto-electronic conversion structure comprises the photoelectric conversion unit of a plurality of parallel connections.
20. as each described semiconductor direct current opto-electronic transformers of claim 1-19, it is characterized in that, comprise described electric light transformational structure and opto-electronic conversion structure that multilayer is alternately piled up in vertical direction, comprise separator between every adjacent electric light transformational structure and the opto-electronic conversion structure.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201110355999 CN102427094B (en) | 2011-11-10 | 2011-11-10 | Semiconductor direct current photoelectric transformer |
| US13/643,889 US9391226B2 (en) | 2011-11-10 | 2012-05-11 | Semiconductor DC transformer |
| EP12775116.2A EP2748862A4 (en) | 2011-11-10 | 2012-05-11 | Semiconductor dc transformer |
| PCT/CN2012/075393 WO2013067805A1 (en) | 2011-11-10 | 2012-05-11 | Semiconductor dc transformer |
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| CN 201110355999 CN102427094B (en) | 2011-11-10 | 2011-11-10 | Semiconductor direct current photoelectric transformer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2013067968A1 (en) * | 2011-11-10 | 2013-05-16 | Guo Lei | Semiconductor photoelectric power conversion system |
| CN103456828A (en) * | 2011-11-10 | 2013-12-18 | 郭磊 | Semiconductor photoelectric power converter |
| WO2013067805A1 (en) * | 2011-11-10 | 2013-05-16 | Guo, Lei | Semiconductor dc transformer |
| CN102496649A (en) * | 2011-11-10 | 2012-06-13 | 郭磊 | Semi-conductor DC photoelectric transformer |
| US9391226B2 (en) | 2011-11-10 | 2016-07-12 | Lei Guo | Semiconductor DC transformer |
| EP2777143A4 (en) | 2011-11-10 | 2015-11-11 | Lei Guo | Semiconductor electricity converter |
| US8785950B2 (en) | 2011-11-10 | 2014-07-22 | Lei Guo | Chip with semiconductor electricity conversion structure |
| WO2013159693A1 (en) * | 2012-04-24 | 2013-10-31 | Lei Guo | Group iii-v semiconductor dc transformer and method for forming same |
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| CN101803036A (en) * | 2007-09-10 | 2010-08-11 | 村田正义 | Integrated tandem-type thin film silicon solar cell module and method for manufacturing the same |
| CN101889351A (en) * | 2007-12-05 | 2010-11-17 | 株式会社钟化 | Multilayer thin-film photoelectric converter and its manufacturing method |
| CN202503017U (en) * | 2011-11-10 | 2012-10-24 | 郭磊 | Semiconductor direct current photoelectric transformer |
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| US6946928B2 (en) * | 2003-10-30 | 2005-09-20 | Agilent Technologies, Inc. | Thin-film acoustically-coupled transformer |
| US8299555B2 (en) * | 2009-11-15 | 2012-10-30 | United Microelectronics Corp. | Semiconductor optoelectronic structure |
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| CN101803036A (en) * | 2007-09-10 | 2010-08-11 | 村田正义 | Integrated tandem-type thin film silicon solar cell module and method for manufacturing the same |
| CN101889351A (en) * | 2007-12-05 | 2010-11-17 | 株式会社钟化 | Multilayer thin-film photoelectric converter and its manufacturing method |
| CN202503017U (en) * | 2011-11-10 | 2012-10-24 | 郭磊 | Semiconductor direct current photoelectric transformer |
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