CN102569489B - A kind of semiconductor direct current transformer - Google Patents
A kind of semiconductor direct current transformer Download PDFInfo
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- CN102569489B CN102569489B CN201210020018.9A CN201210020018A CN102569489B CN 102569489 B CN102569489 B CN 102569489B CN 201210020018 A CN201210020018 A CN 201210020018A CN 102569489 B CN102569489 B CN 102569489B
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Abstract
The invention provides a kind of semiconductor direct current transformer, comprising: the electrooptic semiconductor transformational structure of multiple series connection, for input electric energy is converted to luminous energy; With the semiconductor photoelectric conversion structure of multiple series connection, for by transform light energy for export electric energy, wherein, the number of semiconductor photoelectric conversion structure is different from from the number of electrooptic semiconductor transformational structure to realize direct current transformation, and electrooptic semiconductor transformational structure is mated with the working light of semiconductor photoelectric conversion structure.Have high pressure resistant according to the semiconductor direct current transformer of the embodiment of the present invention, electromagnetic-radiation-free, coil structure, the advantage such as safe and reliable.
Description
Technical field
The present invention relates to current/voltage transformation field, particularly a kind of semiconductor direct current transformer.
Background technology
The overwhelming majority that traditional electric power system adopts is the transmission form of alternating current, main cause is because the convenience of AC transformation, adopt electromagnetic field as energy transmission medium, utilize electromagnetic induction principle to realize transformation by the coupling between the main secondary coil of the different number of turn, especially low pressure is raised to high pressure.And direct current is in loss, stabilization of power grids degree, there is extremely huge advantage circuit cost aspect relative to alternating current, just at direct current transformation, especially DC boosting aspect never has pressure build-up technique and the device of simple and effective, and along with the development of technology, solar cell, it is increasing that fuel cells etc. directly produce galvanic generation technology proportion, on the other hand, need to adopt galvanic power consumption equipment also to get more and more, as LED bulb, OLED, what LED television and display screen and other domestic electronic appliances many used mostly is also direct current.The way that existing technology importantly adopts " DC generation-DC-AC conversion-AC transformation-ac high-voltage conveying-AC transformation-AC/DC conversion-DC application ", the method has following shortcoming:
1, required device is complicated, and element is numerous, and volume is comparatively large, and cost is higher;
2, all have energy loss in various degree in each link, such as power transformation loss, unsteady flow loss, transmission loss, the user side driving loss being converted into direct current again etc., Energy Transfer gross efficiency is not high;
3, in the process that ac high-voltage is carried, the AC phases between different electricity generation system is difficult to Complete Synchronization, the less stable of whole electrical network.
By contrast, more simple and stable is reliable, energy loss consumption is less for the scheme of " DC generation-direct current transformation-high direct voltage conveying-direct current transformation-DC application ".Transmit electricity for making DC generation and be widely used, development direct current transformation technology and development direct current transformation device are key issues urgently to be resolved hurrily.
Summary of the invention
Object of the present invention is intended at least solve one of above-mentioned technological deficiency, particularly proposes a kind of semiconductor direct current transformer.
The invention provides a kind of semiconductor direct current transformer, comprising: the electrooptic semiconductor transformational structure of multiple series connection, for input electric energy is converted to luminous energy; With the semiconductor photoelectric conversion structure of multiple series connection, for by described transform light energy for export electric energy, wherein, the number of described semiconductor photoelectric conversion structure is different from from the number of described electrooptic semiconductor transformational structure to realize direct current transformation, and described electrooptic semiconductor transformational structure is mated with the working light of described semiconductor photoelectric conversion structure.
Semiconductor direct current transformer provided by the invention, by arranging electro-optic conversion layer at the input of semiconductor direct current transformer, utilize the light radiation that semiconductor electronic transition between the energy levels produces, direct current is converted to light transmit, arrange photoelectric conversion layer at output to export light to be converted into direct current, the voltage of input and output unit cell depends on the electro-optic conversion layer in its electro-optic conversion structure and the photoelectric conversion layer properties of materials parameter in photovoltaic conversion structure respectively, electro-optic conversion structure and the photovoltaic conversion structure series connection of varying number is adopted respectively at input and output, utilize the number of electro-optic conversion structure and photovoltaic conversion structure than the transformation realizing direct voltage.The advantages such as this semiconductor direct current transformer also has high pressure resistant, electromagnetic-radiation-free, and coil structure is safe and reliable, and volume is little, and the life-span is long, lightweight, convenient for installation and maintenance.
Semiconductor direct current transformer according to an embodiment of the invention, described electrooptic semiconductor transformational structure comprises light-emitting diode, resonant radiation diode or laser diode.
Semiconductor direct current transformer according to an embodiment of the invention, described semiconductor photoelectric conversion structure is the photocell of the one side electrode leading structure having back contacts or bury contact.
Semiconductor direct current transformer according to an embodiment of the invention, described electrooptic semiconductor transformational structure or described semiconductor photoelectric conversion structure comprise the electrooptic semiconductor conversion subelement of multiple parallel connection or the semiconductor optoelectronic conversion subelement of multiple parallel connection.
Semiconductor direct current transformer according to an embodiment of the invention, also comprise: separator, wherein, described multiple electrooptic semiconductor transformational structure is formed in described separator side, and each electrooptic semiconductor transformational structure comprises electro-optic conversion layer, and described multiple semiconductor photoelectric conversion structure is formed in described separator opposite side, and each photovoltaic conversion structure comprises photoelectric conversion layer, wherein, the working light that sends described electro-optic conversion layer of described separator is transparent.
Semiconductor direct current transformer according to an embodiment of the invention, described electrooptic semiconductor transformational structure, described separator and described semiconductor photoelectric conversion structure have akin refraction coefficient.
Semiconductor direct current transformer according to an embodiment of the invention, the material refraction coefficient of described electrooptic semiconductor transformational structure, described separator and described semiconductor photoelectric conversion structure increases progressively in gradient step by step.
Semiconductor direct current transformer according to an embodiment of the invention, at least one in described electrooptic semiconductor transformational structure, described separator and described semiconductor photoelectric conversion structure has roughened surface, patterned surface or photon crystal structure.
Semiconductor direct current transformer according to an embodiment of the invention, also comprise: the first contact layer being positioned at described electro-optic conversion layer top, be positioned at the second contact layer bottom described electro-optic conversion layer, be positioned at the 3rd contact layer at described photoelectric conversion layer top, be positioned at the 4th contact layer bottom described photoelectric conversion layer, wherein, the working light that sends described electro-optic conversion layer of described second contact layer and described 4th contact layer is transparent.
Semiconductor direct current transformer according to an embodiment of the invention, described second contact layer and the 4th contact layer are one in heavily-doped semiconductor material, transparent conductive oxide, Graphene and combination thereof.
Semiconductor direct current transformer according to an embodiment of the invention, also comprises: the reflector being positioned at described electro-optic conversion layer top; Be positioned at the reflector at described photoelectric conversion layer top.
Semiconductor direct current transformer according to an embodiment of the invention, also comprises: the 5th contact layer being positioned at described electro-optic conversion layer both sides; With the 6th contact layer being positioned at described photoelectric conversion layer both sides.
Semiconductor direct current transformer according to an embodiment of the invention, also comprises: the reflector being positioned at described electro-optic conversion layer top; Be positioned at the reflector at described electro-optic conversion layer top.
Semiconductor direct current transformer according to an embodiment of the invention, also comprise: substrate layer, wherein, described multiple semiconductor photoelectric conversion structure and multiple electrooptic semiconductor transformational structure are formed on described substrate layer, and described multiple semiconductor photoelectric conversion structure has photoelectric conversion layer, described multiple electrooptic semiconductor transformational structure has electro-optic conversion layer, wherein, is filled with insulation transparent medium between described multiple semiconductor photoelectric conversion structure and multiple electrooptic semiconductor transformational structure.
Semiconductor direct current transformer according to an embodiment of the invention, has leg-of-mutton catoptric arrangement bottom described substrate layer.
Semiconductor direct current transformer according to an embodiment of the invention, also comprise: the 9th contact layer being positioned at the 7th contact layer at described electro-optic conversion layer top, being positioned at the 8th contact layer bottom described electro-optic conversion layer, being positioned at described photoelectric conversion layer top, and the tenth contact layer be positioned at bottom described photoelectric conversion layer, wherein, the working light that sends described electro-optic conversion layer of described 8th contact layer and the tenth contact layer is transparent.
Semiconductor direct current transformer according to an embodiment of the invention, described 8th contact layer and the tenth contact layer are one in heavily-doped semiconductor material, transparent conductive oxide, Graphene and combination thereof.
Semiconductor direct current transformer according to an embodiment of the invention, also comprises: the reflector being positioned at the top of described electro-optic conversion layer and described photoelectric conversion layer; Be positioned at the reflector of the bottom of described electro-optic conversion layer and described photoelectric conversion layer.
Semiconductor direct current transformer according to an embodiment of the invention, also comprises: be respectively formed at the 11 contact layer of described electro-optic conversion layer both sides and be formed in the 12 contact layer of described photoelectric conversion layer both sides.
Semiconductor direct current transformer according to an embodiment of the invention, also comprises: the reflector being positioned at the top of described electro-optic conversion layer and described photoelectric conversion layer; Be positioned at the reflector of the bottom of described electro-optic conversion layer and described photoelectric conversion layer.
Semiconductor direct current transformer according to an embodiment of the invention, the material of described electro-optic conversion layer comprises the AlGaInP of reddish yellow light, GaN and InGaN of ultraviolet, InGaN and AlGaInN of royal purple light, ZnO, AlGaInAs, GaAS, InGaAs, InGaAsP of ruddiness or infrared light, AlGaAs, InGaAsNSb and other III compound nitrogen series, III arsenic system or phosphorus series compound semi-conducting material and combination thereof.
Semiconductor direct current transformer according to an embodiment of the invention, the material of described photoelectric conversion layer comprises Si, Ge, SiGe, AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, InGaAsNSb, other iii-v direct energy-gap semiconductor material and combination thereof.
Semiconductor direct current transformer according to an embodiment of the invention, also comprise: housing, wherein, the electrooptic semiconductor transformational structure of described multiple series connection and the semiconductor photoelectric conversion structure of described multiple series connection are respectively formed on two apparent surfaces of described housing, and are filled with liquid clear dielectric or gaseous state transparent insulating medium in described housing.
The aspect that the present invention adds and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
The present invention above-mentioned and/or additional aspect and advantage will become obvious and easy understand from the following description of the accompanying drawings of embodiments, wherein:
Fig. 1 is the fundamental diagram of semiconductor direct current transformer of the present invention;
Fig. 2 is the fundamental diagram with the semiconductor direct current transformer of multiple subelement parallel-connection structure of the present invention;
Fig. 3 is the structural representation of the semiconductor direct current transformer of one embodiment of the invention;
Fig. 4 is the structural representation of the semiconductor direct current transformer of one embodiment of the invention;
Fig. 5 is the structural representation of the semiconductor direct current transformer of one embodiment of the invention;
Fig. 6 is the structural representation of the semiconductor direct current transformer of one embodiment of the invention;
Fig. 7 is the structural representation of the semiconductor direct current transformer of one embodiment of the invention;
Fig. 8 is the schematic diagram of the del mirror structure of photoelectric conversion layer upper surface in Fig. 7;
Fig. 9 is the structural representation of the semiconductor direct current transformer of one embodiment of the invention;
Figure 10 is the structural representation of the semiconductor direct current transformer of one embodiment of the invention;
Figure 11 is the structural representation of the semiconductor direct current transformer of one embodiment of the invention; And
Figure 12 is the structural representation of the semiconductor direct current transformer of one embodiment of the invention.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
Disclosing hereafter provides many different embodiments or example is used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts of specific examples and setting are described.Certainly, they are only example, and object does not lie in restriction the present invention.In addition, the present invention can in different example repeat reference numerals and/or letter.This repetition is to simplify and clearly object, itself does not indicate the relation between discussed various embodiment and/or setting.In addition, the various specific technique that the invention provides and the example of material, but those of ordinary skill in the art can recognize the property of can be applicable to of other techniques and/or the use of other materials.In addition, fisrt feature described below second feature it " on " structure can comprise the embodiment that the first and second features are formed as directly contact, also can comprise other feature and be formed in embodiment between the first and second features, such first and second features may not be direct contacts.
The invention provides a kind of semiconductor direct current transformer, its operation principle is as shown in Figure 1: input direct voltage V1 in each electrooptic semiconductor transformational structure of input, photon is produced to inject Carrier recombination in electrooptic semiconductor transformational structure, photon transmission is to semiconductor photoelectric conversion structure, different charge carriers is produced to excite in semiconductor photoelectric conversion structure, and be separated by internal electric field, output dc voltage V2 on each semiconductor photoelectric conversion structure, thus utilize light wave to realize Energy Transfer.It is pointed out that electrooptic semiconductor transformational structure should be mated with the working light of semiconductor photoelectric conversion structure.In this energy transport, on the one hand, the numerical value of V1 and V2 depends on the material characteristic parameter of electrooptic semiconductor transformational structure and semiconductor photoelectric conversion structure, as material category, emergent property, energy gap, doping content etc., therefore by regulating corresponding characterisitic parameter to realize energy conversion efficiency optimization; On the other hand, by electrooptic semiconductor transformational structure and the semiconductor photoelectric conversion structure of different number of connecting respectively at input and output, the number of electro-optic conversion structure and photovoltaic conversion structure ratio is utilized to realize direct current transformation.Such as, suppose that electrooptic semiconductor transformational structure is m, semiconductor photoelectric conversion structure is n, then export total voltage/input total voltage=(n*V2)/(m*V1).
Wherein, electrooptic semiconductor transformational structure is mated with the working light of semiconductor photoelectric conversion structure and is referred to: the light that electrooptic semiconductor transformational structure sends will light characteristics match optimized with semiconductor photoelectric conversion structure photoelectric conversion efficiency, to make the Electrooptical-optoelectrical energy conversion efficiency of device higher, the energy loss in transformation process is less.Specifically, the wavelength of light that semi-conductor electricity optical conversion element sends determines primarily of the energy gap (bandgap) of its active area semi-conducting material, and the energy hv of its single photon launched equals its energy gap Eg1.The wavelength of light that semiconductor optoelectronic converting unit can absorb also is determined by the bandwidth of its active coating semi-conducting material, could photoelectric effect be produced when only having the energy hv of single photon to be more than or equal to the energy gap Eg2 of active coating semi-conducting material, inspire charge carrier pair.But because in general a photon can only inspire an electron hole pair, if photon energy hv > is Eg2, unnecessary part energy is then converted into heat waste and loses, and causes the waste of photon energy.Therefore consider from the transmission of luminous energy and conversion efficiency angle, the photon energy of the light that semi-conductor electricity optical conversion element the sends unit that will just can either be photoelectrically converted absorbs and don't can exceed the waste much causing energy, and that is the energy gap Eg1 of electrooptic unit active area will equal or slightly larger than the energy gap Eg2 of photoelectric conversion unit.
In one embodiment of the invention, electrooptic semiconductor transformational structure comprises light-emitting diode (LED), resonant radiation diode (RS_LED) or laser diode (LD).This several LED all can convert electrical energy into luminous energy, stable and reliable working performance effectively, and thermal effect is few, and RS_LED has good directionality, advantage that modulation speed is higher further, and LD has the advantage that monochromaticjty is good, brightness is higher further.
In one embodiment of the invention, semiconductor photoelectric conversion structure can be the photocell of the one side electrode leading structure having back contacts (backcontact) or bury contact (buriedcontact).Have back contacts or bury the photocell of one side electrode leading structure of contact, its sensitive surface can be avoided being subject to electrode shading impact, therefore energy conversion efficiency is higher, and sensitive surface is more homogeneous attractive in appearance, can reduce assembling difficulty, improves packaging density.
In one embodiment of the invention, electrooptic semiconductor transformational structure larger for single area or semiconductor photoelectric conversion structure can be divided into the subelement that multiple area is less, reutilization technology plane interconnection technology is connected in parallel unit less for multiple area, to reduce dead resistance, be conducive to reducing the energy loss in energy transport on semiconductor direct current transformer.As shown in Figure 2, input comprises m group electrooptic semiconductor transformational structure, often organizes electrooptic semiconductor transformational structure and comprises x electrooptic semiconductor conversion subelement; Output comprises n group semiconductor photoelectric conversion structure, often organizes semiconductor photoelectric conversion structure and comprises y electrooptic semiconductor conversion subelement.
The course of work of commutator transformer is now described for " direct current 220V-direct current 10kV ".In this transformation process, series connection 100 threshold voltages can be selected to be the AlGaInP based light-emitting diode of 2.2V at input, select series connection 5000 photovoltages to be the AlGaInP base photocell of 2V at output.Wherein send the gold-tinted of wavelength about 560nm after the energising of AlGaInP based light-emitting diode, AlGaInP base photocell then absorbs this working light and is converted to electric energy and exports.In addition, conveniently produce and assemble, usually product being made modular unit, namely multiple electrooptic semiconductor transformational structure and multiple semiconductor photoelectric conversion structure being made standard dimensions respectively.Bringing energy loss to reduce light leak, during installation, usually making the opto-electronic conversion extinction gross area of the luminous gross area of the electro-optic conversion of multiple electrooptic semiconductor transformational structure and multiple semiconductor photoelectric conversion structure equal.In this example, electrooptic semiconductor transformational structure is 100: 5000 with the number ratio partly leading photovoltaic conversion structure, therefore needing light-emitting diode and photronic number ratio to be 1: 50, light-emitting area and the single photronic extinction area ratio of single light-emitting diode are 50: 1.The area of the single light-emitting diode in this case needed is larger, preferably, also light-emitting diodes larger for single area can be replaced by the identical but light-emitting diode that light-emitting area is less of effective multiple threshold voltage, small-area devices more easily manufactures on the one hand, is also conducive on the other hand reducing dead resistance.
Below with reference to the accompanying drawings semiconductor direct current transformer according to the embodiment of the present invention is described.
Figure 3 shows that the structural representation of semiconductor direct current transformer according to an embodiment of the invention.
As shown in Figure 3, semiconductor direct current transformer 1 comprises the electrooptic semiconductor transformational structure 10 of multiple series connection, the semiconductor photoelectric conversion structure 20 of multiple series connection and separator 300.Semiconductor direct current transformer 1 comprises the electrooptic semiconductor transformational structure 10 of 3 series connection and the semiconductor photoelectric conversion structure 20 of 6 series connection in the present embodiment, it should be noted that, the value of " 3 " and " 6 " is only the convenience of example explanation, and not as limiting to the invention.Wherein, the working light coupling of electrooptic semiconductor transformational structure 10 and semiconductor photoelectric conversion structure 20, separator 300 pairs of working light are transparent.
Wherein, separator 300 in the electrooptic semiconductor transformational structure 10 of multiple series connection with between multiple semiconductor photoelectric conversion structure 20 of connecting, for convenience of description, define in electrooptic semiconductor transformational structure 10 and semiconductor photoelectric conversion structure 20, part close to separator 300 is called bottom, otherwise is called top.
Wherein, the electrooptic semiconductor transformational structure 10 of multiple series connection inputs electric energy by lead-in wire I1 and lead-in wire I2, sends working light.Each electrooptic semiconductor transformational structure 10 comprises electro-optic conversion layer 100 for realizing power conversion in vertical direction, be positioned at first contact layer 101 at electro-optic conversion layer 100 top, be positioned at the second contact layer 102 bottom electro-optic conversion layer 100, wherein the working light that sends of the second contact layer 102 pairs of electro-optic conversion layers 100 is transparent, further, by connecting the first contact layer 101 and the second contact layer 102 in turn to realize being connected in series between each electrooptic semiconductor transformational structure 10.Wherein, electro-optic conversion layer 100, in order to the direct current of input is converted to light, sends the working light of required wave-length coverage.Working light comprises the combination of the one or more wave bands the whole spectral region of the infrared light from the ultraviolet light of 100nm to 10um, be preferably unifrequent light, the purple light of the ruddiness of such as 620nm, the blue light of 460nm, 380nm, to be conducive to using ripe prior art to manufacture electro-optic conversion layer.Such as electro-optic conversion layer 100 can adopt the structure and material with high-quantum efficiency, high electro-optical efficiency.Particularly, can be LED structure or laser structure, generally comprise active layer, limiting layer, current spreading layer, the structures such as PN junction, wherein active layer can be multi-quantum pit structure, and the electro-optic conversion layer of laser structure also comprises resonant cavity, and LED structure comprises resonance LED structure.The Material selec-tion of electro-optic conversion layer 102 is based on material self-characteristic (as defect concentration, band structure etc.) and required light wave characteristic (as wave-length coverage), such as can adopt the AlGaInP of reddish yellow light, GaN and InGaN of ultraviolet, InGaN and AlGaInN of royal purple light, ZnO, AlGaInAs, GaAS, InGaAs, InGaAsP of ruddiness or infrared light, AlGaAs, InGaAsNSb and other III compound nitrogen series, III arsenic system or phosphorus series compound semi-conducting material and combination thereof.The material (as AlGaInP, InGaN, GaN) that wherein defect concentration is low, light conversion efficiency is high is preferred material.Wherein, first contact layer 101 does not need working light transparent, therefore the materials such as metal, alloy, conductive oxide, heavily-doped semiconductor can be adopted to form individual layer and/or multi-layer compound structure, be preferably low resistive metal such as Cu, more preferably, by increasing the thickness of metal electrode layer to reduce resistance, thermolysis can be played simultaneously.Wherein, the working light that second contact layer 102 pairs electro-optic conversion layer 100 sends is transparent, therefore the energy gap of the second contact layer 102 material should be greater than the photon energy of the working light that electro-optic conversion layer 100 sends, to prevent the absorption of the second contact layer 102 pairs of working light, improve light wave conversion efficiency.In general, can adopt transparent heavily doped semiconductor material with wide forbidden band GaAs, GaN, AlGaInP, AlGaInN, the AlGaInAs of working light, or conductive, transparent metal oxide materials ITO, SnO
2, ZnO, or one in Graphene and combination thereof realize.
Wherein, the semiconductor photoelectric conversion structure 20 of multiple series connection receives working light, and exports electric energy by lead-in wire O1 and lead-in wire O2.Each semiconductor photoelectric conversion structure 20 comprises photoelectric conversion layer 200 for realizing power conversion in vertical direction, be positioned at the 3rd contact layer 201 at electro-optic conversion layer 200 top, be positioned at the 4th contact layer 202 bottom photoelectric conversion layer 200, wherein the working light that sends of the 4th contact layer 202 pairs of electro-optic conversion layers 100 is transparent, further, by connecting the 3rd contact layer 201 and the 4th contact layer 202 in turn to realize being connected in series between each semiconductor photoelectric conversion structure 20.Wherein, photoelectric conversion layer 200 is in order to be converted to electricity to realize transformation by light.The material of photoelectric conversion layer 200 comprises Si, Ge, SiGe, AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, InGaAsNSb, other iii-v direct energy-gap semiconductor material and combination thereof.It is to be noted, electro-optic conversion layer 100 needs to mate with the band structure of photoelectric conversion layer 200, thus the wave band of the working light making electro-optic conversion layer 100 send and the highest wave band of photoelectric conversion layer 200 absorption efficiency match, to reach the highest light-wave energy conversion efficiency.Wherein, 3rd contact layer 201 does not need working light transparent, therefore the materials such as metal, alloy, conductive oxide, heavily-doped semiconductor can be adopted to form individual layer and/or multi-layer compound structure, be preferably low resistive metal such as Cu, more preferably, by increasing the thickness of metal electrode layer to reduce resistance, thermolysis can be played simultaneously.Wherein, the working light that 4th contact layer 202 pairs electro-optic conversion layer 100 sends is transparent, therefore the energy gap of the 4th contact layer 202 material should be greater than the photon energy of the working light that electro-optic conversion layer 100 sends, to prevent the absorption of the 4th contact layer 202 pairs of working light, improve light wave conversion efficiency.In general, can adopt transparent heavily doped semiconductor material with wide forbidden band GaAs, GaN, AlGaInP, AlGaInN, the AlGaInAs of working light, or conductive, transparent metal oxide materials ITO, SnO
2, ZnO, or one in Graphene and combination thereof realize.
Wherein, separator 300 is for realizing the electrical isolation of electrooptic semiconductor transformational structure 10 and semiconductor photoelectric conversion structure 20, input voltage and output voltage are not influenced each other, simultaneously transparent to working light, the light carrying energy is enable to be transferred to semiconductor photoelectric conversion structure 20 from electrooptic semiconductor transformational structure 10, realize the transmission of energy, finally realize voltage transformation.The thickness of separator 300 depends on size and the insulating requirements of the voltage of input and output, separator is thicker, and insulation effect is better, and the puncture voltage that can bear is higher, but simultaneously may be larger to the decay of light, therefore the determination principle of thickness of insulating layer is: to meet under insulating requirements more Bao Yuehao.Based on above-mentioned requirements, in embodiments of the present invention, the material of separator 300 can be the Al of solid transparent dielectric
2o
3, AlN, SiO
2, MgO, Si
3n
4, BN, diamond, LiAlO
2, LiGaO
2, GaAs, SiC, TiO
2, ZrO
2, SrTiO
3, Ga
2o
3, ZnS, SiC, MgAl
2o
4, LiNbO
3, LiTaO
3, yttrium-aluminium-garnet (YAG) crystal, KNbO
3, LiF, MgF
2, BaF
2, GaF
2, LaF
3, one in BeO, GaP, GaN and rare earth oxide REO and combination thereof, also can for being filled in pure water, the CCl of the liquid clear dielectric in housing
4, CS
2, or SF
6deng gaseous state transparent insulating medium.
In addition, in order to obtain good photovoltaic energy conversion efficiency, light should be avoided to propagate and to enter in the process of photoelectric conversion layer 200 at each bed boundary generation total reflection phenomenon from electro-optic conversion layer 100.Because and if only if light, when the material that refraction coefficient is larger enters refraction coefficient less material, total reflection occurs, therefore on the direction of propagation of light, need only suitably mate the generation can avoiding total reflection by each layer refraction coefficient.In an embodiment of the present invention, the second contact layer 102, separator 300 can be made, the material refraction coefficient of the 4th contact layer 202 and photoelectric conversion layer 200 mates with electro-optic conversion layer 100 material refraction coefficient, to avoid in interface, total reflection occurring in light communication process.So-called coupling refers to the λ that satisfies condition herein
electro-optic conversion layer≤ λ
second contact layer≤ λ
separator≤ λ
4th contact layer≤ λ
photoelectric conversion layer(λ is refraction coefficient).Therefore in the present invention's preferred embodiment, the material refraction coefficient of electro-optic conversion layer 100, second contact layer 102, separator 300, the 4th contact layer 202 and photoelectric conversion layer 200 is similar.In the present invention's preferred embodiment, the material refraction coefficient echelon of electro-optic conversion layer 100, second contact layer 102, separator 300, the 4th contact layer 202 and photoelectric conversion layer 200 increases, i.e. λ
electro-optic conversion layer< λ
second contact layer< λ
separator< λ
4th contact layer< λ
photoelectric conversion layer(λ is material refraction coefficient).
In addition, the present invention can also lower total reflection by making different material layer have roughened surface, patterned surface or photon crystal structure etc.Therefore in the preferred embodiment of the invention, at least one in electro-optic conversion layer 100, second contact layer 102, separator 300, the 3rd contact layer 102 and photoelectric conversion layer 200 has roughened surface, patterned surface or photon crystal structure, to increase light transmission, reduce the total reflection of light.
In one embodiment of the invention, electrooptic semiconductor transformational structure 10 is multijunction structure, launches and organizes working light more; Semiconductor photoelectric conversion structure 20 is also multijunction structure, absorbs many group working light and is converted into electric energy.Particularly, the light of specific band is normally sent when electrooptic semiconductor transformational structure 10 converts electrical energy into luminous energy, such as: (Al
xga
1-x)
yin
1-yp (wherein 0 < x < 1,0 < y < 1) material LED mainly sends the working light of ruddiness and gold-tinted, In
xga
1-xn (wherein 0 < x < 1) material LED then sends the working light of green glow or blue wave band, Al
xga
1-xn and Al
xga
yin
1-x-yn material LED then sends the working light of ultraviolet band.Same, semiconductor photoelectric conversion structure 20 is also the working light that certain material absorbs specific band usually, and all there is obvious absorption in such as silicon based opto-electronics pond to visible ray and infrared light, and iii-v photocell then absorbs the visible ray of specific band.In order to improve conversion efficiency, electrooptic semiconductor transformational structure 10 and semiconductor photoelectric conversion structure 20 all can be designed to multijunction structure, namely semiconductor direct current transformer 1 is combined by many pn junction p ns photovoltaic conversion structure 20 of the many pn junction p ns electro-optic conversion structure 10 and absorption many groups working light that send multiple groups of working light, only needs to ensure that working light mates therebetween.When suitably mating working light, multijunction structure has higher energy conversion efficiency.
In one embodiment of the invention, also comprise: multiple diode, multiple diode is connected with electrooptic semiconductor transformational structure 10 and semiconductor photoelectric conversion structure 20 respectively.When electric current in circuit is too large, multiple diode can be first breakdown, thus protect electrooptic semiconductor transformational structure 10 and semiconductor photoelectric conversion structure 20.
It should be noted that, in above-described embodiment, can make that electrooptic semiconductor transformational structure 10 is positioned on separator 300, semiconductor photoelectric conversion structure 20 is positioned under separator 300, also can make that electrooptic semiconductor transformational structure 10 is positioned under separator 300, semiconductor photoelectric conversion structure 20 is positioned on separator 300, the change of this relative position does not cause materially affect to the work of semiconductor direct current transformer.
Semiconductor direct current transformer provided by the invention, by arranging electro-optic conversion layer at the input of semiconductor direct current transformer, utilize the light radiation that semiconductor electronic transition between the energy levels produces, direct current is converted to light transmit, arrange photoelectric conversion layer at output to export light to be converted into direct current, the voltage of input and output unit cell depends on the electro-optic conversion layer in its electro-optic conversion structure and the photoelectric conversion layer properties of materials parameter in photovoltaic conversion structure respectively, electrooptic semiconductor transformational structure and the semiconductor photoelectric conversion structure series connection of varying number is adopted respectively at input and output, utilize the number of electrooptic semiconductor transformational structure and semiconductor photoelectric conversion structure than the transformation realizing direct voltage.The advantages such as this semiconductor direct current transformer also has high pressure resistant, electromagnetic-radiation-free, and coil structure is safe and reliable, and volume is little, and the life-span is long, lightweight, convenient for installation and maintenance.
On the basis of the embodiment shown in Fig. 3, in order to reduce light leak loss, improve photoelectric conversion efficiency, semiconductor direct current transformer of the present invention also comprises further: be positioned at the reflector at electro-optic conversion layer top and be positioned at the reflector at photoelectric conversion layer top, being limited among device not leaked to make light.According to the difference of reflector particular location, its structure can have two kinds of situations as shown in Figure 4 and Figure 5.
Figure 4 shows that according to the structural representation comprising the semiconductor direct current transformer in reflector of the present invention, this reflector between electro-optic conversion layer and its back contact layer, and between photoelectric conversion layer and its back contact layer.
As shown in Figure 4, compared with the embodiment shown in Fig. 3, semiconductor direct current transformer 2 also comprises further: the first reflector 401 between the first contact layer 101 and electro-optic conversion layer 100, and the second reflector 402 between the 3rd contact layer 201 and photoelectric conversion layer 200.Light can be limited in and spill therebetween and not by the first reflector 401 and the second reflector 402, is conducive to the conversion efficiency improving photoelectric conversion layer 200.Wherein, because the first reflector 401 and the second reflector 402 are positioned at contact layer inside, therefore need to possess conduction and can be with the feature of mating, can adopt that to make Bragg mirror with electro-optic conversion layer 100 or the akin semi-conducting material of photoelectric conversion layer 200 reflective to realize.Further, now the first contact layer 101 and the 3rd contact layer 201 are without the need to transparent to working light, and the material formation individual layers such as metal, alloy, conductive oxide, heavily-doped semiconductor and/or multi-layer compound structure can be adopted to reduce resistance.
Figure 5 shows that, according to the structural representation comprising the semiconductor direct current transformer in reflector of the present invention, this reflector is positioned at the top of multiple electrooptic semiconductor transformational structure 10, and the top of multiple semiconductor photoelectric conversion structure 20.
As shown in Figure 5, compared with the embodiment shown in Fig. 3, semiconductor direct current transformer 3 also comprises further: the 3rd reflector 403 being positioned at the top of multiple electrooptic semiconductor transformational structure 10, and the 4th reflector 404 at the top of multiple semiconductor photoelectric conversion structure 20.Light can be limited in and spill therebetween and not by the 3rd reflector 403 and the 4th reflector 404, is conducive to the conversion efficiency improving photoelectric conversion layer 200.Wherein, need to possess insulating properties when the 3rd reflector 403 and the 4th reflector 404 are overall reflector layer, the Bragg mirror structure of the insulating material such as rare earth oxide REO can be adopted; When the 3rd reflector 403 and the 4th reflector 404 are for being distributed in multiple reflector layer at the top of multiple construction unit, it also can adopt the omnidirectional reflector structure of the electric conducting material such as metal, alloy.Further, now the first contact layer 101 and the 3rd contact layer 201 need working light transparent, can adopt heavily doped semiconductor material with wide forbidden band GaAs, GaN, AlGaInP, AlGaInN, AlGaInAs, or conductive, transparent metal oxide materials ITO, SnO
2, ZnO, or one in Graphene and combination thereof realize.
In an embodiment of the invention, the contact layer of the electrode of electrooptic semiconductor transformational structure 10 and semiconductor photoelectric conversion structure 20 can also be positioned at the position of both sides.Figure 6 shows that contact layer according to the present invention is positioned at the structural representation of the semiconductor direct current transformer of two side positions.
As shown in Figure 6, semiconductor direct current transformer 4 comprises the electrooptic semiconductor transformational structure 10 of multiple series connection, the semiconductor photoelectric conversion structure 20 of multiple series connection and separator 300.Wherein, each electrooptic semiconductor transformational structure 10 comprises electro-optic conversion layer 100, and is positioned at the 5th contact layer 103 of electro-optic conversion layer 100 both sides; Each semiconductor photoelectric conversion structure 20 comprises photoelectric conversion layer 200, and is positioned at the 6th contact layer 203 of photoelectric conversion layer 200 both sides; Electrooptic semiconductor transformational structure 10 is mated with the working light of semiconductor photoelectric conversion structure 20; Separator 300 pairs of working light are transparent.For obtaining higher energy conversion efficiency, preferably, can further include: the 5th reflector 405 being positioned at electro-optic conversion layer 100 top, and the 6th reflector 406 being positioned at photoelectric conversion layer 200 top.5th reflector 405 and the 6th reflector 406 need to possess insulating properties, and its material can adopt the Bragg mirror structure of the insulating material such as rare earth oxide REO.
In another embodiment, electrooptic semiconductor transformational structure 10 and semiconductor photoelectric conversion structure 20 can also be positioned at isolation or position, supporting construction the same side.Figure 7 shows that the structural representation of the semiconductor direct current transformer according to same lateral position of the present invention.
As shown in Figure 7, this semiconductor direct current transformer 5 comprises: the electrooptic semiconductor transformational structure 10 of multiple series connection, the semiconductor photoelectric conversion structure 20 of multiple series connection, substrate 30.Wherein, the electrooptic semiconductor transformational structure 10 of multiple series connection is mated with the working light of multiple semiconductor photoelectric conversion structure 20 of connecting, alternately be arranged in (such as: top surface) on the same surface of substrate 30, between multiple electrooptic semiconductor transformational structure 10 and multiple semiconductor photoelectric conversion structure 20, be filled with the transparent insulating medium for electrical isolation.Each electrooptic semiconductor transformational structure 10 comprises: electro-optic conversion layer 100, and be positioned at the 7th contact layer 104 at electro-optic conversion layer 100 top, be positioned at the 8th contact layer 105 bottom electro-optic conversion layer 100, wherein the 8th contact layer 105 pairs of working light are transparent.Each semiconductor photoelectric conversion structure 20 comprises: photoelectric conversion layer 200, and be positioned at the 9th contact layer 204 at photoelectric conversion layer 200 top, be positioned at the tenth contact layer 205 bottom photoelectric conversion layer 200, wherein the tenth contact layer 205 pairs of working light are transparent.Substrate 30 comprises transparent insulating medium layer 300 and reflector 301, wherein, transparent insulating medium layer 300 can be solid transparent insulating material or encapsulates liquid or gaseous state transparent insulation material in the housing, the space of propagating for providing light, reflector 301 is leg-of-mutton catoptric arrangement, as shown in Figure 8, reflector 301 to turn to through reflector slant reflection for the longitudinal transmission ray making electro-optic conversion layer 100 send and is transferred to photoelectric conversion layer 200.In a preferred embodiment of the invention, also comprise: the reflector, top 302 being positioned at the top of semiconductor direct current transformer, reflector, top 302 is similar with reflector 301, having the catoptric arrangement of del, turning to transmission for making longitudinal transmission ray.
In other embodiments of the present invention, electro-optic conversion layer 100, except longitudinal luminescence, also can do lateral luminous.When electro-optic conversion layer 100 is lateral luminous, multiple electrooptic semiconductor transformational structure 10 being alternately arranged with multiple semiconductor photoelectric conversion structure 20 is a kind of comparatively easy design on the same lateral surface.In addition, the reflector utilizing two opposite faces to place, can be enclosed in certain area by light, avoid light leak to bring energy loss.And the position in reflector, such embodiment can be divided into Fig. 9 and Figure 10 two kinds of situations again.
Figure 9 shows that the structural representation of semiconductor direct current transformer according to an embodiment of the invention.
As shown in Figure 9, this semiconductor direct current transformer 6 comprises: the electrooptic semiconductor transformational structure 10 of multiple series connection, the semiconductor photoelectric conversion structure 20 of multiple series connection, substrate 300 for supporting.Wherein, the electrooptic semiconductor transformational structure 10 of multiple series connection is mated with the working light of multiple semiconductor photoelectric conversion structure 20 of connecting, and is alternately arranged in the top surface of substrate 300.The transparent insulating medium for electrical isolation is filled with between multiple electrooptic semiconductor transformational structure 10 and multiple semiconductor photoelectric conversion structure 20.Each electrooptic semiconductor transformational structure 10 comprises: electro-optic conversion layer 100, is positioned at the 7th contact layer 104 at electro-optic conversion layer 100 top, is positioned at the 8th contact layer 105 bottom electro-optic conversion layer 100.Each semiconductor photoelectric conversion structure 20 comprises: photoelectric conversion layer 200, is positioned at the 9th contact layer 204 at photoelectric conversion layer 200 top, is positioned at the tenth contact layer 205 bottom photoelectric conversion layer 200.This semiconductor direct current transformer 6 also comprises: the 7th reflector 407 between the 7th contact layer 104 and electro-optic conversion layer 100 and between the 9th contact layer 204 and photoelectric conversion layer 200, and the 8th reflector 408 between the 8th contact layer 105 and electro-optic conversion layer 100 and between the tenth contact layer 205 and photoelectric conversion layer 200.Light can be limited in and spill therebetween and not by the 7th reflector 407 and the 8th reflector 408, is conducive to the conversion efficiency improving photoelectric conversion layer 200.Wherein, because the 7th reflector 407 and the 8th reflector 408 are positioned at contact layer inside, therefore need to possess conduction and can be with the feature of mating, can adopt that to make Bragg mirror with electro-optic conversion layer 100 or the akin semi-conducting material of photoelectric conversion layer 200 reflective to realize.And, now the 7th contact layer 104, the 8th contact layer 105, the 9th contact layer 204, the tenth contact layer 205 are without the need to transparent to working light, and the material formation individual layers such as metal, alloy, conductive oxide, heavily-doped semiconductor and/or multi-layer compound structure can be adopted to reduce resistance.
Figure 10 shows that the structural representation of semiconductor direct current transformer according to an embodiment of the invention.
As shown in Figure 10, this semiconductor direct current transformer 7 comprises: the electrooptic semiconductor transformational structure 10 of multiple series connection, the semiconductor photoelectric conversion structure 20 of multiple series connection, substrate 300 for supporting.Wherein, the electrooptic semiconductor transformational structure 10 of multiple series connection is mated with the working light of multiple semiconductor photoelectric conversion structure 20 of connecting, and is alternately arranged in the top surface of substrate 300.The transparent insulating medium for electrical isolation is filled with between multiple electrooptic semiconductor transformational structure 10 and multiple semiconductor photoelectric conversion structure 20.Each electrooptic semiconductor transformational structure 10 comprises: electro-optic conversion layer 100, is positioned at the 7th contact layer 104 at electro-optic conversion layer 100 top, is positioned at the 8th contact layer 105 bottom electro-optic conversion layer 100.Each semiconductor photoelectric conversion structure 20 comprises: photoelectric conversion layer 200, is positioned at the 9th contact layer 204 at photoelectric conversion layer 200 top, is positioned at the tenth contact layer 205 bottom photoelectric conversion layer 200.This semiconductor direct current transformer 7 also comprises: the 9th reflector 409 being positioned at the 7th contact layer 104 and the 9th contact layer 204 top, and is positioned at the tenth reflector 410 bottom the 8th contact layer 105 and the tenth contact layer 205.Light can be limited in and spill therebetween and not by the 9th reflector 409 and the tenth reflector 410, is conducive to the conversion efficiency improving photoelectric conversion layer 200.Wherein, need to possess insulating properties when the 9th reflector 409 and the tenth reflector 410 are overall reflector layer, the Bragg mirror structure of the insulating material such as rare earth oxide REO can be adopted; When the 9th reflector 409 and the tenth reflector 410 are for being distributed in multiple reflector layer at the top of multiple construction unit, it also can adopt the omnidirectional reflector structure of the electric conducting material such as metal, alloy.And, now the 7th contact layer 104, the 8th contact layer 105, the 9th contact layer 204, the tenth contact layer 205 need working light transparent, heavily doped semiconductor material with wide forbidden band GaAs, GaN, AlGaInP, AlGaInN, AlGaInAs can be adopted, or conductive, transparent metal oxide materials ITO, Sn
o2, ZnO, or one in Graphene and combination thereof realize.
Figure 11 shows that the structural representation of semiconductor direct current transformer according to an embodiment of the invention.
As shown in figure 11, this semiconductor direct current transformer 8 comprises: the electrooptic semiconductor transformational structure 10 of multiple series connection, the semiconductor photoelectric conversion structure 20 of multiple series connection, substrate 300.Wherein, the electrooptic semiconductor transformational structure 10 of multiple series connection is mated with the working light of multiple semiconductor photoelectric conversion structure 20 of connecting, and is alternately arranged in the top surface of substrate 300.The transparent insulating medium for electrical isolation is filled with between multiple electrooptic semiconductor transformational structure 10 and multiple semiconductor photoelectric conversion structure 20.Each electrooptic semiconductor transformational structure 10 comprises: electro-optic conversion layer 100, is positioned at the 11 contact layer 106 of electro-optic conversion layer 100 both sides.Each semiconductor photoelectric conversion structure 20 comprises: photoelectric conversion layer 200, is positioned at the 12 contact layer 206 of photoelectric conversion layer 200 both sides.This semiconductor direct current transformer 8 also comprises: the 11 reflector 411 being positioned at electro-optic conversion layer 100 and photoelectric conversion layer 200 top, and is positioned at the 12 reflector 412 bottom electro-optic conversion layer 100 and photoelectric conversion layer 200.Light can be limited in and spill therebetween and not by the 11 reflector 412, reflector the 411 and the 12, is conducive to the conversion efficiency improving photoelectric conversion layer 200.Wherein, the 11 reflector 412, reflector the 411 and the 12 needs to possess insulating properties, and its material can be the Bragg mirror structure adopting the insulating material such as rare earth oxide REO.Further, now the 11 contact layer the 106 and the 12 contact layer 206 needs working light transparent, can adopt heavily doped semiconductor material with wide forbidden band GaAs, GaN, AlGaInP, AlGaInN, AlGaInAs, or conductive, transparent metal oxide materials ITO, SnO
2, ZnO, or one in Graphene and combination thereof realize.
Figure 12 shows that the structural representation of semiconductor direct current transformer according to an embodiment of the invention.
As shown in figure 12, this semiconductor direct current transformer 9 comprises: the electrooptic semiconductor transformational structure 10 of multiple series connection, the semiconductor photoelectric conversion structure 20 of multiple series connection, housing 30.Wherein, the electrooptic semiconductor transformational structure 10 of multiple series connection is mated with the working light of multiple semiconductor photoelectric conversion structure 20 of connecting, and is respectively formed on two apparent surfaces of housing 30.And be filled with liquid clear dielectric or gaseous state transparent insulating medium in housing 30.
Although illustrate and describe embodiments of the invention, for the ordinary skill in the art, be appreciated that and can carry out multiple change, amendment, replacement and modification to these embodiments without departing from the principles and spirit of the present invention, scope of the present invention is by claims and equivalency thereof.
Claims (23)
1. a semiconductor direct current transformer, is characterized in that, comprising:
The electrooptic semiconductor transformational structure of multiple series connection, for being converted to luminous energy by input electric energy; With
The semiconductor photoelectric conversion structure of multiple series connection, for by described transform light energy for export electric energy, wherein, the number of described semiconductor photoelectric conversion structure is different from from the number of described electrooptic semiconductor transformational structure to realize direct current transformation, described multiple semiconductor photoelectric conversion structure has photoelectric conversion layer, described multiple electrooptic semiconductor transformational structure has electro-optic conversion layer, and the wave band of the working light that described electro-optic conversion layer sends and the highest wave band of described photoelectric conversion layer absorption efficiency match.
2. semiconductor direct current transformer as claimed in claim 1, it is characterized in that, described electrooptic semiconductor transformational structure comprises light-emitting diode, resonant radiation diode or laser diode.
3. semiconductor direct current transformer as claimed in claim 1, it is characterized in that, described semiconductor photoelectric conversion structure is the photocell of the one side electrode leading structure having back contacts or bury contact.
4. semiconductor direct current transformer as claimed in claim 1, it is characterized in that, described electrooptic semiconductor transformational structure or described semiconductor photoelectric conversion structure comprise the electrooptic semiconductor conversion subelement of multiple parallel connection or the semiconductor optoelectronic conversion subelement of multiple parallel connection.
5. the semiconductor direct current transformer according to any one of claim 1-4, is characterized in that, also comprises:
Separator,
Wherein, described multiple electrooptic semiconductor transformational structure is formed in described separator side, and described multiple semiconductor photoelectric conversion structure is formed in described separator opposite side, and wherein, the working light that described separator sends described electro-optic conversion layer is transparent.
6. semiconductor direct current transformer as claimed in claim 5, it is characterized in that, described electrooptic semiconductor transformational structure, described separator and described semiconductor photoelectric conversion structure have akin refraction coefficient.
7. semiconductor direct current transformer as claimed in claim 5, it is characterized in that, the material refraction coefficient of described electrooptic semiconductor transformational structure, described separator and described semiconductor photoelectric conversion structure increases progressively in gradient step by step.
8. semiconductor direct current transformer as claimed in claim 5, it is characterized in that, at least one in described electrooptic semiconductor transformational structure, described separator and described semiconductor photoelectric conversion structure has roughened surface, patterned surface or photon crystal structure.
9. semiconductor direct current transformer as claimed in claim 5, is characterized in that, also comprise:
Be positioned at first contact layer at described electro-optic conversion layer top, be positioned at the second contact layer bottom described electro-optic conversion layer, be positioned at the 3rd contact layer at described photoelectric conversion layer top, be positioned at the 4th contact layer bottom described photoelectric conversion layer, wherein, the working light that sends described electro-optic conversion layer of described second contact layer and described 4th contact layer is transparent.
10. semiconductor direct current transformer as claimed in claim 9, is characterized in that, described second contact layer and the 4th contact layer are one in heavily-doped semiconductor material, transparent conductive oxide, Graphene and combination thereof.
11. semiconductor direct current transformers as claimed in claim 10, is characterized in that, also comprise:
Be positioned at the reflector at described electro-optic conversion layer top;
Be positioned at the reflector at described photoelectric conversion layer top.
12. semiconductor direct current transformers as claimed in claim 5, is characterized in that, also comprise:
Be positioned at the 5th contact layer of described electro-optic conversion layer both sides; With
Be positioned at the 6th contact layer of described photoelectric conversion layer both sides.
13. semiconductor direct current transformers as claimed in claim 12, is characterized in that, also comprise:
Be positioned at the reflector at described electro-optic conversion layer top;
Be positioned at the reflector at described electro-optic conversion layer top.
14. semiconductor direct current transformers according to any one of claim 1-4, is characterized in that, also comprise:
Substrate layer,
Wherein, described multiple semiconductor photoelectric conversion structure and multiple electrooptic semiconductor transformational structure are formed on described substrate layer, and described multiple semiconductor photoelectric conversion structure has photoelectric conversion layer, described multiple electrooptic semiconductor transformational structure has electro-optic conversion layer, wherein, insulation transparent medium is filled with between described multiple semiconductor photoelectric conversion structure and multiple electrooptic semiconductor transformational structure.
15. semiconductor direct current transformers as claimed in claim 14, is characterized in that having triangle catoptric arrangement bottom described substrate layer.
16. semiconductor direct current transformers as claimed in claim 14, is characterized in that, also comprise:
The 9th contact layer being positioned at the 7th contact layer at described electro-optic conversion layer top, being positioned at the 8th contact layer bottom described electro-optic conversion layer, being positioned at described photoelectric conversion layer top, and the tenth contact layer be positioned at bottom described photoelectric conversion layer, wherein, the working light that sends described electro-optic conversion layer of described 8th contact layer and the tenth contact layer is transparent.
17. semiconductor direct current transformers as claimed in claim 16, is characterized in that, described 8th contact layer and the tenth contact layer are one in heavily-doped semiconductor material, transparent conductive oxide, Graphene and combination thereof.
18. semiconductor direct current transformers as claimed in claim 17, is characterized in that, also comprise:
Be positioned at the reflector at the top of described electro-optic conversion layer and described photoelectric conversion layer;
Be positioned at the reflector of the bottom of described electro-optic conversion layer and described photoelectric conversion layer.
19. semiconductor direct current transformers as claimed in claim 14, is characterized in that, also comprise:
Be respectively formed at the 11 contact layer of described electro-optic conversion layer both sides and be formed in the 12 contact layer of described photoelectric conversion layer both sides.
20. semiconductor direct current transformers as claimed in claim 19, is characterized in that, also comprise:
Be positioned at the reflector at the top of described electro-optic conversion layer and described photoelectric conversion layer;
Be positioned at the reflector of the bottom of described electro-optic conversion layer and described photoelectric conversion layer.
21. semiconductor direct current transformers as claimed in claim 5, it is characterized in that, the material of described electro-optic conversion layer comprises the AlGaInP of reddish yellow light, GaN and InGaN of ultraviolet, InGaN and AlGaInN of royal purple light, ZnO, AlGaInAs, GaAS, InGaAs, InGaAsP of ruddiness or infrared light, AlGaAs, InGaAsNSb and other III compound nitrogen series, III arsenic system or phosphorus series compound semi-conducting material and combination thereof.
22. semiconductor direct current transformers as claimed in claim 21, it is characterized in that, the material of described photoelectric conversion layer comprises Si, Ge, SiGe, AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAsSb, InGaAsNSb, other III-V race direct energy-gap semiconductor material and combination thereof.
23. semiconductor direct current transformers as claimed in claim 1, is characterized in that, also comprise:
Housing, wherein, the electrooptic semiconductor transformational structure of described multiple series connection and the semiconductor photoelectric conversion structure of described multiple series connection are respectively formed on two apparent surfaces of described housing, and
Liquid clear dielectric or gaseous state transparent insulating medium is filled with in described housing.
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210020018.9A CN102569489B (en) | 2012-01-20 | 2012-01-20 | A kind of semiconductor direct current transformer |
| PCT/CN2012/075393 WO2013067805A1 (en) | 2011-11-10 | 2012-05-11 | Semiconductor dc transformer |
| US13/643,889 US9391226B2 (en) | 2011-11-10 | 2012-05-11 | Semiconductor DC transformer |
| EP12775116.2A EP2748862A4 (en) | 2011-11-10 | 2012-05-11 | Semiconductor dc transformer |
| PCT/CN2012/084409 WO2013067966A1 (en) | 2011-11-10 | 2012-11-09 | Chip with semiconductor electricity conversion structure |
| PCT/CN2012/084413 WO2013067967A1 (en) | 2011-11-10 | 2012-11-09 | Semiconductor electricity converter |
| US13/823,545 US8785950B2 (en) | 2011-11-10 | 2012-11-09 | Chip with semiconductor electricity conversion structure |
| EP12847792.4A EP2777143A4 (en) | 2011-11-10 | 2012-11-09 | Semiconductor electricity converter |
| US13/823,481 US8941126B2 (en) | 2011-11-10 | 2012-11-09 | Semiconductor electricity converter |
| TW101142014A TW201331969A (en) | 2012-01-20 | 2012-11-12 | Semiconductor DC transformer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210020018.9A CN102569489B (en) | 2012-01-20 | 2012-01-20 | A kind of semiconductor direct current transformer |
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| CN102569489A CN102569489A (en) | 2012-07-11 |
| CN102569489B true CN102569489B (en) | 2016-01-27 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2777143A4 (en) | 2011-11-10 | 2015-11-11 | Lei Guo | Semiconductor electricity converter |
| WO2013067966A1 (en) * | 2011-11-10 | 2013-05-16 | Lei Guo | Chip with semiconductor electricity conversion structure |
| WO2013067968A1 (en) * | 2011-11-10 | 2013-05-16 | Guo Lei | Semiconductor photoelectric power conversion system |
| CN102496649A (en) * | 2011-11-10 | 2012-06-13 | 郭磊 | Semi-conductor DC photoelectric transformer |
| TW201731069A (en) * | 2016-02-22 | 2017-09-01 | 晶元光電股份有限公司 | Photo-electrical conversion system |
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| JP3532966B2 (en) * | 1994-07-11 | 2004-05-31 | テルモ株式会社 | Photoelectric conversion device and method of manufacturing the same |
| CN1625812A (en) * | 2002-05-02 | 2005-06-08 | 中田仗祐 | Panel for light receiving or light-emitting and its manufacturing method |
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| JPS5640234A (en) * | 1979-09-12 | 1981-04-16 | Fujitsu Ltd | Light-electricity converting element |
| US4730115A (en) * | 1985-02-12 | 1988-03-08 | Logical Co., Ltd. | Transformer system and direct current power supply |
| US5248931A (en) * | 1991-07-31 | 1993-09-28 | The United States Of America As Represented By The Secretary Of The Navy | Laser energized high voltage direct current power supply |
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| JP3532966B2 (en) * | 1994-07-11 | 2004-05-31 | テルモ株式会社 | Photoelectric conversion device and method of manufacturing the same |
| CN1625812A (en) * | 2002-05-02 | 2005-06-08 | 中田仗祐 | Panel for light receiving or light-emitting and its manufacturing method |
| CN101494246A (en) * | 2008-01-25 | 2009-07-29 | 昂科公司 | High concentration terrestrial solar cell arrangement with iii-v compound semiconductor cell |
| CN102005978A (en) * | 2010-11-30 | 2011-04-06 | 中国工程物理研究院流体物理研究所 | Electric energy isolation photovoltaic power unit |
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