CN103426967A - Semiconductor photoelectric/electric energy conversion system - Google Patents
Semiconductor photoelectric/electric energy conversion system Download PDFInfo
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- CN103426967A CN103426967A CN2012104513426A CN201210451342A CN103426967A CN 103426967 A CN103426967 A CN 103426967A CN 2012104513426 A CN2012104513426 A CN 2012104513426A CN 201210451342 A CN201210451342 A CN 201210451342A CN 103426967 A CN103426967 A CN 103426967A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S99/00—Subject matter not provided for in other groups of this subclass
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention provides a semiconductor photoelectric/electric energy conversion system. The semiconductor photoelectric/electric energy conversion system includes a substrate and a plurality of photoelectric/electric energy conversion modules which are connected in series and/or in parallel with one another such that the expansion of voltage and/or power can be realized, wherein each photoelectric/electric energy conversion module further includes an isolation layer which is transparent for working light of the photoelectric/electric energy conversion module, one or a plurality of electro-optic conversion structures which are formed on the isolation layer and are used for converting inputted electric energy into working light and emitting the working light, and one or a plurality of photovoltaic conversion structures which are formed on the isolation layer and are used for converting working light into electric energy and outputting the electric energy, wherein the absorption spectra of the photovoltaic conversion structures are in frequency spectrum matching with the emission spectra of the electro-optic conversion structures. The semiconductor photoelectric/electric energy conversion system has the advantages of simple structure and flexible expansion of voltage and power.
Description
Technical field
The present invention relates to power transformation distribution technique and electronic devices and components field, particularly a kind of semiconductor optoelectronic electric energy conversion system.Background technology
In electric power and electronic system, the electric energy conversion relies on unsteady flow and transformation to realize, this process is common and important link, and wherein AC/AC transformation, ac/dc variable flow and variable pressure, AC/DC variable flow and variable pressure, DC-DC transformation have application very widely.
In prior art, the AC/AC transformation adopts electromagnetic field as the Energy Transfer medium usually, utilizes electromagnetic induction principle to realize transformation by the coupling between the input and output coil of the different numbers of turn; The rectifier circuit that the ac/dc variable flow and variable pressure adopts diode to form is realized; The converter that the devices such as the inductance that the DC-DC transformation is used by power semiconductor and drive circuit, energy storage or electric capacity form is realized; The AC/DC variable flow and variable pressure is realized by power semiconductor and drive circuit, filter circuit.In above scheme, all there is following shortcoming: required device complexity, element is numerous, and volume is larger, and phase place is difficult synchronous, and electromagnetic radiation is arranged, and certain energy loss is arranged, can not be high pressure resistant, less stable etc.For this reason, develop a kind of can electric energy device and the system of conversion, and corresponding packing forms has very important value.
Summary of the invention
The present invention one of is intended to solve the problems of the technologies described above at least to a certain extent or at least provides a kind of useful business to select.For this reason, but one object of the present invention is to propose the semiconductor optoelectronic electric energy conversion system of a kind of simple in structure, voltage and power flexible expansion.
Semiconductor optoelectronic electric energy conversion system according to the embodiment of the present invention, comprising: substrate; A plurality of photoelectricity electric energy conversion module, series connection and/or in parallel mutually between described a plurality of photoelectricity electric energy conversion module, to realize the expansion of voltage and/or power, wherein, described photoelectricity electric energy conversion module further comprises: separator, and described separator is transparent to the work light of described photoelectricity electric energy conversion module; Be formed on the one or more electric light transformational structure on described separator, for inputting electric energy, be converted to described work light emission; With the one or more opto-electronic conversion structure be formed on described separator, for described work light is converted to the output electric energy.In one embodiment of the invention, wherein, frequency spectrum coupling between the absorption spectrum of described opto-electronic conversion structure and described electric light transformational structure emission spectrum.
In one embodiment of the invention, described photoelectricity electric energy conversion module is DC (direct current)-DC type photoelectricity electric energy conversion module, AC (interchange)-AC type photoelectricity electric energy conversion module, AC-DC type photoelectricity electric energy conversion module or DC-AC type photoelectricity electric energy conversion module.
In one embodiment of the invention, in described photoelectricity electric energy conversion module, described electric light transformational structure comprises light-emitting diode, resonance light-emitting diode, laser diode, quantum dot light emitting device or organic luminescent device.
In one embodiment of the invention, in described photoelectricity electric energy conversion module, described opto-electronic conversion structure comprises semiconductor photovoltaic cells, quantum dot photovoltaic battery or organic material photovoltaic cell.
In one embodiment of the invention, in described photoelectricity electric energy conversion module, described separator is insulating material, between described electric light transformational structure, described electric light transformational structure, by the insulation characterisitic of material itself, is isolated; Perhaps, described separator is semi-conducting material, between described electric light transformational structure and described separator, between described opto-electronic conversion structure and described separator, by anti-PN junction structure partially, is isolated.
In one embodiment of the invention, described photoelectricity electric energy conversion module is the flat pattern device, and the input of described photoelectricity electric energy conversion module and output are the diagonal cross-distribution.
In one embodiment of the invention, described semiconductor optoelectronic electric energy conversion system also comprises: adjustment module, described adjustment module is connected with total output with total input of described a plurality of photoelectricity electric energy conversion module, for the running parameter by the described total output of monitoring, the running parameter of the described total input of feedback regulation.
In one embodiment of the invention, in described photoelectricity electric energy conversion module, the refraction coefficient of the layers of material on light transmition path coupling.
In one embodiment of the invention, in described photoelectricity electric energy conversion module, also comprise optical trap, described optical trap is for being limited in described photoelectricity electric energy conversion module inside by light.
At least there is following advantage according to the semiconductor optoelectronic electric energy conversion system of the embodiment of the present invention:
(1) this system comprises a plurality of photoelectricity electric energy conversion module, and each module not only can self realize the conversion of DC-DC electric energy, can also realize DC-AC, AC-DC or the conversion of AC-AC electric energy, and connects to realize power and/or voltage expansion by flexible connection in series-parallel.
(2) the photoelectricity electric energy conversion module in this system and substrate are all flat pattern, and specific area is large, is beneficial to heat radiation.
(3) this system adopts the encapsulation of diagonal distribution of electrodes, succinct attractive in appearancely between line does not intersect, for assembly working offers convenience, can reduce the voltage difference between adjacent photoelectricity electric energy conversion module simultaneously, increase the insulation distance between electrode, thereby improve insulation characterisitic, can effectively prevent from puncturing.
(4) after the input circuit of this system provides a fixing input voltage, on output circuit, can establish a plurality of taps, export different voltage simultaneously, meet different user demands.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
The accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing, wherein:
Fig. 1 is the structural representation of semiconductor optoelectronic electric energy conversion system of the present invention;
Fig. 2 is the structural representation of another semiconductor optoelectronic electric energy conversion system of the present invention;
Fig. 3 is fundamental diagram and the side-looking structural representation of the DC-DC type photoelectricity electric energy conversion module in semiconductor optoelectronic electric energy conversion system of the present invention;
Fig. 4 is fundamental diagram and the side-looking structural representation of the AC-AC type photoelectricity electric energy conversion module in semiconductor optoelectronic electric energy conversion system of the present invention;
Fig. 5 is fundamental diagram and the side-looking structural representation of the AC-DC type photoelectricity electric energy conversion module in semiconductor optoelectronic electric energy conversion system of the present invention;
Fig. 6 is fundamental diagram and the side-looking structural representation of the DC-AC type photoelectricity electric energy conversion module in semiconductor optoelectronic electric energy conversion system of the present invention;
Fig. 7 is the structural representation of the photoelectricity electric energy conversion module in the semiconductor optoelectronic electric energy conversion system of one embodiment of the present of invention;
Fig. 8 is the structural representation of the photoelectricity electric energy conversion module in the semiconductor optoelectronic electric energy conversion system of an alternative embodiment of the invention;
Fig. 9 is the structural representation of the photoelectricity electric energy conversion module in the semiconductor optoelectronic electric energy conversion system of an alternative embodiment of the invention;
Figure 10 is the structural representation with semiconductor optoelectronic electric energy conversion system of adjustment module of the present invention;
Figure 11 is the principle schematic of the adjustment module of Figure 10;
Figure 12 is the schematic appearance of photoelectricity electric energy conversion module of the present invention;
Figure 13 is the schematic diagram be connected in series of a plurality of photoelectricity electric energy conversion module of the present invention;
Figure 14 is the schematic diagram of first connecting and being connected in parallel afterwards of a plurality of photoelectricity electric energy conversion module of the present invention; With
Figure 15 is the schematic diagram of the output lead of a plurality of photoelectricity electric energy conversion module of the present invention.
Embodiment
Below describe embodiments of the invention in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label means same or similar element or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center ", " vertically ", " laterally ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", orientation or the position relationship of indications such as " counterclockwise " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " be only for describing purpose, and can not be interpreted as indication or hint relative importance or the implicit quantity that indicates indicated technical characterictic.Thus, one or more these features can be expressed or impliedly be comprised to the feature that is limited with " first ", " second ".In description of the invention, the implication of " a plurality of " is two or more, unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, broad understanding should be done in the terms such as term " installation ", " being connected ", " connection ", " fixing ", for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be also to be electrically connected to; Can be directly to be connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can understand as the case may be above-mentioned term concrete meaning in the present invention.
In the present invention, unless otherwise clearly defined and limited, First Characteristic Second Characteristic it " on " or D score can comprise that the first and second features directly contact, also can comprise that the first and second features are not directly contacts but by the other feature contact between them.And, First Characteristic Second Characteristic " on ", " top " and " above " comprise First Characteristic directly over Second Characteristic and oblique upper, or only mean that the First Characteristic level height is higher than Second Characteristic.First Characteristic Second Characteristic " under ", " below " and " below " comprise First Characteristic directly over Second Characteristic and oblique upper, or only mean that the First Characteristic level height is less than Second Characteristic.
For making those skilled in the art understand better the present invention, first prior art and principle of the present invention are set forth and contrasted.From physical principle, say, traditional AC transformer utilization be electromagnetic induction principle, free electron in conductor concussion generates an electromagnetic field and transmits as energy, by the coupling transferring energy between the primary and secondary coil, thereby realizes AC voltage conversion.What the semiconductor optoelectronic electric energy conversion system in the present invention was followed is principle of quantum mechanics, produce photon by charge carrier in semi-conducting material in different transitions between energy level, utilize photon as energy transmission medium, excite again the generation charge carrier in other semi-conducting material, thereby realize voltage transformation.Therefore, due to the difference of transferring energy medium, the characteristic that particle (photon) characteristic replaces ripple (electromagnetic wave) becomes basic operation principle in commutator transformer of the present invention.
The present invention proposes a kind of semiconductor optoelectronic electric energy conversion system, comprising: substrate; A plurality of photoelectricity electric energy conversion module, series connection and/or in parallel mutually between described a plurality of photoelectricity electric energy conversion module, to realize the expansion of voltage and/or power, wherein, described photoelectricity electric energy conversion module further comprises: separator, and described separator is transparent to the work light of described photoelectricity electric energy conversion module; Be formed on the one or more electric light transformational structure on described separator, for inputting electric energy, be converted to described work light emission; With the one or more opto-electronic conversion structure be formed on described separator, for described work light is converted to the output electric energy.In one embodiment of the invention, frequency spectrum coupling between the absorption spectrum of described opto-electronic conversion structure and described electric light transformational structure emission spectrum.
The total energy conversion efficiency of the semiconductor optoelectronic electric energy conversion system in the present invention is mainly determined by three factors: electric light energy conversion efficiency, photovoltaic energy conversion efficiency, light energy losses.Development due to LED and photovoltaic cell technology, electro-optical efficiency and the photoelectric conversion efficiency of advanced semiconductor device have reached very high level now, the internal quantum efficiency of the red-light LED that for example prepared by the AlGaInP material has approached 100%, blue-ray LED internal quantum efficiency prepared by the GaN material has also reached 80%, and the internal quantum efficiency of III-V family photovoltaic cell has also approached 100%, therefore light energy losses just becomes the principal element of restriction commutator transformer energy conversion efficiency of the present invention, therefore propose three kinds of technology in the present invention and reduced light energy losses as far as possible, improve energy conversion efficiency, respectively: the frequency spectrum between electric light transformational structure emission spectrum and opto-electronic conversion structure absorption spectrum mates to reduce non-absorption loss water and the thermal loss of photon, the refraction coefficient of each material on the light transmition path mates to reduce cirtical angle of total reflection loss and Fresnel loss, light trapping reveals to reduce light the energy loss caused.These have specific description hereinafter.
Below in conjunction with accompanying drawing, the semiconductor optoelectronic electric energy conversion system of embodiments of the invention is done to further explaination.
As shown in Figure 1, semiconductor optoelectronic electric energy conversion system of the present invention comprises: substrate 1 and a plurality of photoelectricity electric energy conversion module 2.Wherein, substrate 1 is for supporting and heat radiation, and material can be metal, pottery or plastics, the aluminium alloy that preferred density is little, thermal conductivity is good or copper.A plurality of photoelectricity electric energy conversion module 2 are fixed on substrate 1 with neatly arranging, output-input voltage and the power of single photoelectricity electric energy conversion module 2 are fixed, and between a plurality of photoelectricity electric energy conversion module 2, by flexible connected mode, realize different output-input voltage ratio and power expansion.
Preferably, as shown in Figure 2, semiconductor optoelectronic electric energy conversion system of the present invention can be also to be comprised of a plurality of substrates 1 and a plurality of photoelectricity electric energy conversion module 2, a plurality of substrates are arranged in stacking shape, can make in the confined space to hold more photoelectricity electric energy conversion module 2, realize the high-power output of high voltage or large electric current.
Photoelectricity electric energy conversion module 2 in semiconductor optoelectronic electric energy conversion system of the present invention can have four kinds of DC-DC type electric energy conversion module (with reference to figure 3), AC-AC type electric energy conversion module (with reference to figure 4), AC-DC type electric energy conversion module (with reference to figure 5) and DC-AC type electric energy conversion module (with reference to figure 6), four the main distinction is electric light transformational structure wherein and the connected mode difference between the opto-electronic conversion structure, and those skilled in the art can demand arrange in actual applications flexibly.It should be noted that, control switch element K1 and K2 in Fig. 6 can have various ways, and for example metal-oxide-semiconductor etc., integrated on sheet easily.The operating state of the photoelectricity electric energy conversion module of the DC-AC electric energy conversion shown in Fig. 6 is: K1 and K2 conducting in turn, so that output presents positive half period and negative half-cycle in turn, produces and exchanges output.The photoelectricity electric energy conversion module of simple the most practical DC-DC electric energy translation function of below take is example, elaborates the basic structure of the photoelectricity electric energy conversion module of introducing its invention.
The fundamental diagram that Fig. 3 (a) is DC-DC type photoelectricity electric energy conversion module, wherein arrow means work light.Input direct voltage V1 on each electric light transformational structure 21 of input, with the compound generation photon of injected carrier in electric light transformational structure 21, photon transmission is to opto-electronic conversion structure 22, produce different charge carriers to excite in opto-electronic conversion structure 22, and separate by internal electric field, output dc voltage V2 on each opto-electronic conversion structure 22, thus utilize light wave to realize Energy Transfer.It is pointed out that electric light transformational structure 21 and the work light of opto-electronic conversion structure 22 should mate.In this energy transport, on the one hand, the numerical value of V1 and V2 depends on the material characteristic parameter of electric light transformational structure 21 and opto-electronic conversion structure 22, as material category, emergent property, energy gap, doping content etc., therefore by regulating corresponding characterisitic parameter to realize the energy conversion efficiency optimization; On the other hand, by electric light transformational structure 21 and the opto-electronic conversion structure 22 of the some of connecting respectively at input and output, utilize the number ratio of the two to realize direct current transformation.For example, suppose that electric light transformational structure 21 is for m, opto-electronic conversion structure 22 be that n is individual, exports total voltage/input total voltage=(n*V2)/(m*V1).In one embodiment of the invention, the electric light transformational structure can be one, and the opto-electronic conversion structure can be a plurality of; In another embodiment of the present invention, the electric light transformational structure can be a plurality of, and the opto-electronic conversion structure can be one; In another embodiment of the present invention, electric light transformational structure and semiconductor photoelectric conversion structure can be a plurality of.
The side-looking structural representation that Fig. 3 (b) is DC-DC type photoelectricity electric energy conversion module, the end view that in this figure corresponding diagram 1, photoelectricity electric energy conversion module 2 is located to intercept at A-A '.From Fig. 3 (b), can see, photoelectricity electric energy conversion module 2 further comprises: separator 23, be formed on the electric light transformational structure 21 of a plurality of series connection on separator 23, and the opto-electronic conversion structure 22 that is formed on a plurality of series connection on separator 23.Particularly:
Electric light transformational structure 21 can be light-emitting diode (LED), resonance light-emitting diode (RC_LED) or laser diode (LD), organic luminescent device or quantum dot light emitting device.These several devices all can convert electrical energy into luminous energy effectively, stable and reliable working performance, and thermal effect is few, and RC_LED further has advantages of that good directionality, modulation speed are higher, LD further has advantages of that monochromaticjty is good, brightness is higher.Electric light transformational structure 21 comprises the electric light conversion layer, its material can be the AlGaInP of reddish yellow light, the GaN of ultraviolet and InGaN, the InGaN of royal purple light, AlGaInN and ZnO, the AlGaInAs of ruddiness or infrared light, GaAS, InGaAs, InGaAsP, AlGaAs, InGaAsNSb and other III family compound nitrogen series, arsenic system of III family or phosphorus series compound semi-conducting material and combination thereof, luminous organic material or quantum dot light emitting material.
Opto-electronic conversion structure 22 can be semiconductor photovoltaic cells, quantum dot photovoltaic battery or the organic material photovoltaic cell that has back of the body contact (back contact) or bury the single face electrode leading structure of contact (buried contact).Have back of the body contact or bury the photocell of the single face electrode leading structure of contact, its sensitive surface can avoid being subject to electrode shading impact, therefore energy conversion efficiency is higher, and sensitive surface homogeneous is attractive in appearance more, can reduce the assembling difficulty, improve packaging density.Opto-electronic conversion structure 22 comprises photoelectric conversion layer, and its material can be AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, GaAs, GaSb, InGaP, InGaAs, InGaAsP, AlGaAs, AlGaP, InAlP, AlGaAs Sb, InGaAsNSb, other III-V family direct energy-gap semiconductor material and combination thereof, organic photovoltaic material or quantum dot photovoltaic material.
The work light that 23 pairs of electric light transformational structures 21 of separator are sent is transparent, for the electrical isolation between electric light transformational structure 21 and opto-electronic conversion structure 22.Separation principle can be to utilize the insulation characterisitic of material itself to be isolated, and can also be isolated by anti-PN junction structure partially is set between a plurality of electric light transformational structures 21, a plurality of opto-electronic conversion structure 22.In one embodiment of the invention, separator 23 can be insulating material, for example Al of solid transparent dielectric
2O
3, AlN, SiO
2, MgO, Si
3N
4, BN, diamond, LiAlO
2, LiGaO
2, GaAs, SiC, TiO
2, ZrO
2, SrTiO
3, Ga
2O
3, ZnS, SiC, MgAl
2O
4, LiNbO
3, LiTaO
3, yttrium-aluminium-garnet (YAG) crystal, KNbO
3, LiF, MgF
2, BaF
2, GaF
2, LaF
3, BeO, GaP, a kind of and combination in GaN and rare earth oxide REO, also can be for being filled in the pure water of the liquid clear dielectric in housing, CCl
4, CS
2Perhaps SF
6In gaseous state transparent insulation medium.In another embodiment of the present invention, separator 23 can be semi-conducting material, GaP for example, GaAs, InP, GaN, Si, Ge, GaSb and other be to the transparent semi-conducting material of work light, by separator 23 is adulterated, the technique such as injection, with between a plurality of electric light transformational structures 21 and separator 23, and form PN junction between a plurality of opto- electronic conversion structures 22 and 23, then PN junction is placed in to anti-state partially to forbid the appearance of On current, thereby realizes the electrical isolation between a plurality of electric light transformational structures 21 and a plurality of opto-electronic conversion structure 22.
Wherein, the number of the number of opto-electronic conversion structure 22 and electric light transformational structure 21 is proportional to realize transformation, and frequency spectrum coupling between the emission spectrum of the absorption spectrum of opto-electronic conversion structure 22 and electric light transformational structure 21.So-called frequency spectrum coupling refers to, the light that electric light transformational structure 21 is sent will with the optimized light characteristic coupling of opto-electronic conversion structure 22 photoelectric conversion efficiency so that the Electrooptical-optoelectrical energy conversion efficiency is higher, the energy loss of the photon in transfer process is less.Particularly: the utilizing emitted light of electric light transformational structure 21 can be the monochromatic light corresponding with the absorption efficiency maximum of opto-electronic conversion structure 22, also may be for other frequencies, can make opto-electronic conversion structure 22 that the characteristic frequency light that quantum efficiencies are greater than 1 photovoltaic effect occurs, a kind of situation of optimization is that the size of the photon energy of electric light conversion layer emission can guarantee that photon can be absorbed by photoelectric conversion layer, can not cause excess energy to lose as heat waste because photon energy is too high again, a kind of possible ideal state is that the electric light conversion layer is consistent with the energy gap of photoelectric conversion layer active material, thereby can guarantee that light absorbs the loss that can not cause again the residue photon energy.It should be noted that, above-mentioned " monochromatic light " has certain spectral width, for example, has the spectral width of 20nm left and right for red-light LED, and non-limiting certain concrete Frequency point, this is known technology, does not repeat them here.
It should be noted that, although shown in Fig. 3 is the situation that a plurality of electric light transformational structures 21 and a plurality of opto-electronic conversion structures 22 are positioned at separator 23 both sides, but in other embodiment of the present invention, can be also that a plurality of electric light transformational structures 21 are positioned at the same side of separator 23 with a plurality of opto-electronic conversion structures 22, and reflective structure is set so that the utilizing emitted light of a plurality of electric light transformational structures 21 is sent to a plurality of opto-electronic conversion structures 22 after reflective structure in separator 23 bottoms.
Preferably, in photoelectricity electric energy conversion module 2, the refraction coefficient of the layers of material on light transmition path coupling.In other words, the refractive index Satisfying Matching Conditions of electric light transformational structure 21, separator 23 and opto-electronic conversion structure 22.So-called coupling refers to that three's refraction coefficient is similar, the refraction coefficient of the direction layers of material that perhaps three's refraction coefficient is propagated along light path increases progressively gradually, can effectively avoid like this at each place, bed boundary, total reflection phenomenon occurring in the light communication process, obtain good photovoltaic energy conversion efficiency.
Preferably, also can further comprise optical trap in photoelectricity electric energy conversion module 2, this optical trap is limited in photoelectricity electric energy conversion module 2 inside for the light of working, particularly be limited between the electric light conversion layer and photoelectric conversion layer of realizing conversion process of energy, prevent the light energy losses that light leak brings, improve energy conversion efficiency.
For making photoelectricity electric energy conversion module 2 of the present invention be it will be appreciated by those skilled in the art that better the inventor is that many levels describe in detail by the electrooptic semiconductor transformational structure 21 in the present invention and semiconductor photoelectric conversion structure 22 Further Divisions.It should be noted that, hereinafter elaboration of the present invention is laid particular emphasis on material and the purposes of each level, for simplicity, setting the optical semiconductor piezoelectric transformer is bilateral structure, and the number of electrooptic semiconductor transformational structure and semiconductor photoelectric conversion structure is one.
Figure 7 shows that the structural representation of photoelectricity electric energy conversion module 2 according to an embodiment of the invention.This photoelectricity electric energy conversion module 2 comprises: the first electrode layer 100; Be formed on the electric light conversion layer 102 on the first electrode layer 100; Be formed on the second electrode lay 104 on electric light conversion layer 102; Be formed on the first separator 106 on the second electrode lay 104; Be formed on the third electrode layer 108 on the first separator 106; Be formed on the photoelectric conversion layer 110 on third electrode layer 108; And be formed on the 4th electrode layer 112 on photoelectric conversion layer 110.
Wherein, electric light conversion layer 102 is converted to light in order to the direct current by input, sends the work light of needed wave-length coverage.The combination of the one or more wave bands of work light comprising from the ultraviolet light of 100nm to the whole spectral region of the infrared light of 10um, be preferably unifrequent light, the purple light of the blue light of the ruddiness of 620nm, 460nm, 380nm for example, to be conducive to using ripe prior art to manufacture the electric light conversion layer.For example electric light conversion layer 102 can adopt the structure and material with high-quantum efficiency, high electro-optical efficiency.Particularly, can, for LED structure or laser structure, generally comprise active layer, limiting layer, electric current dispersion layer, the structures such as PN junction, wherein active layer can be multi-quantum pit structure, and the electric light conversion layer of laser structure also comprises resonant cavity, and the LED structure comprises resonance LED structure.The material of electric light conversion layer 102 is selected based on material self-characteristic (as defect concentration, band structure etc.) and needed light wave characteristic (as wave-length coverage), for example can adopt the AlGaInP of reddish yellow light, the AlGaInAs of the InGaN of the GaN of ultraviolet and InGaN, royal purple light and AlGaInN, ZnO, ruddiness or infrared light, GaAS, InGaAs and other III family compound nitrogen series, the As of III family system or phosphorus series compound semi-conducting material and combination thereof, the material that wherein defect concentration is low, light conversion efficiency is high (as AlGaInP, InGaN, GaN) is preferred.
Wherein, photoelectric conversion layer 110 is in order to be converted to light electricity to realize transformation.The material of photoelectric conversion layer 110 comprises AlGaInP, InGaAs, InGaN, AlGaInN, InGaAsP, InGaP, and other III-V family direct energy-gap semiconductor material and combination thereof.Electric light conversion layer 102 generally can be selected the direct energy-gap semiconductor material, the band structure of its band structure and photoelectric conversion layer 110 is complementary so that the highest wave band of the wave band of the work light that electric light conversion layer 102 sends and photoelectric conversion layer 110 absorption efficiencies is complementary, to reach the highest light-wave energy conversion efficiency.
Wherein, the work light that the first separator 106, the second electrode lay 104 and 108 pairs of electric light conversion layer 102 of third electrode layer send is transparent.In embodiments of the present invention, the energy gap of the second electrode lay 104, the first separator 106 and third electrode layer 108 material is greater than the photon energy of the work light that electric light conversion layer 102 sends, preventing the second electrode lay 104, isolate the absorption of 106 layers and 108 pairs of described work light of third electrode layer, improve the light wave conversion efficiency.
In addition, the material refraction coefficient of the material refraction coefficient of the first separator 106, the second electrode lay 104 and third electrode layer 108 and electric light conversion layer 102 and photoelectric conversion layer 110 coupling, to avoid in the light communication process occurring in interface total reflection.Total reflection occurs during due to the less material of and if only if the light material larger from refraction coefficient enter refraction coefficient, therefore in preferred embodiment of the present invention, the material refraction coefficient of the second electrode lay 104, the first separator 106, third electrode layer 108 and photoelectric conversion layer 110 is identical, and full emission occurs in each interface when avoiding light to transfer to photoelectric conversion layer 110 from electric light conversion layer 102; In preferred embodiment of the present invention, the material refraction coefficient echelon of the second electrode lay 104, the first separator 106, third electrode layer 108 and photoelectric conversion layer 110 increases.The implication of described " echelon increase " is: the material refraction coefficient of each described layer is not less than the material refraction coefficient of its previous described layer, the material refraction coefficient that is some described layer can be identical with its previous described layer, but the material refraction coefficient integral body of described each layer is and increases progressively trend; In preferred embodiment of the present invention, the material refraction coefficient of the second electrode lay 104, the first separator 106, third electrode layer 108 and photoelectric conversion layer 110 increases gradually.By above-mentioned preferred embodiment, avoid on the one hand light (to comprise light that electric light conversion layer 102 produces and the light of described each electrode layer and each reflective layer reflects) along electric light conversion coating 102 to photoelectric conversion layer during 110 directions transmission total reflection occurs, to improve the efficiency of transmission of light; Emission entirely occurs in 102 directions when transmission (mainly comprising the third and fourth electrode of photoelectric conversion layer 110 and the light of the second reflective layer reflects) from photoelectric conversion layer 110 to the electric light conversion layer to impel on the other hand light, so that more light is limited in photoelectric conversion layer 110, thereby improve light, be converted to electric efficiency.
In addition, the present invention can also adopt in the interface of different material layer figure by roughening or rule to lower total reflection as photon crystal structure etc.Therefore in the preferred embodiment of the invention, at least one in electric light conversion layer 102, the second electrode lay 104, the first separator 106, third electrode layer 108 and photoelectric conversion layer 110 has roughened surface or photon crystal structure, to increase light transmission, reduce the total reflection of light.
The first separator 106 is for realizing the electrical isolation of electric light conversion layer 102 and photoelectric conversion layer 110, input voltage and output voltage are not influenced each other, simultaneously transparent to work light, make the light that carries energy be transferred to electric light conversion layer 110 from photoelectric conversion layer 102, realize the transmission of energy, finally realize voltage transformation.The thickness of the first separator 106 depends on size and the insulating requirements of the voltage of input and output, the first separator is thicker, insulation effect is better, the puncture voltage that can bear is higher, but simultaneously may be larger to the decay of light, so definite principle of thickness of insulating layer is: meeting under insulating requirements more Bao Yuehao.Based on above-mentioned requirements, in embodiments of the present invention, the material of the first separator 106 is preferably Al
2O
3, AlN, SiO
2, MgO, Si
3N
4, BN, diamond, LiAlO
2, LiGaO
2, semi-insulated GaAs, SiC or GaP, a kind of and combination in GaN, and rare earth oxide REO and combination thereof.The material of the second electrode lay 104 and third electrode layer 108 can be heavily doped GaAs, GaN, GaP, AlGaInP, AlGaInN, AlGaInAs, or conductive, transparent metal oxide materials ITO (indium tin oxide), SnO
2, ZnO and combination thereof etc.
In preferred embodiment of the present invention, also comprise between the first electrode layer 100 and electric light conversion layer 102 between the first reflector 101, the four electrode layers 112 and photoelectric conversion layer 110 and also comprise the second reflector 111, as shown in Figure 7.Described the first and second reflector are limited in light between electric light conversion layer 102 and photoelectric conversion layer 110 and carry out back reflective, to prevent light, reveal, and improve the energy conversion efficiency of light.The material require in reflector meets, the requirements such as material property stable, interface contact resistance low, good conductivity high to work light reflection efficiency.Specifically can realize by following two kinds of modes: a kind of is the Bragg mirror structure, utilize the material layer that the multilayer refractive index is different to realize reflection, for example, such as the material that adopts two kinds of different refractivities (refractive index differs 0.6 GaAs and AlAs, refractive index differs 2.2 Si and rare earth oxide REO) is made sandwich construction to realize reflection; A kind of is metal completely reflecting mirror structure, and directly the metal of deposit high conductivity and thermal conductivity is realized reflection, such as Ag, Au, Cu, Ni, Al, Sn, Co, W and combination thereof etc.Because the thickness with the contacted dorsum electrode layer in reflector (i.e. the first electrode layer 100 and the 4th electrode layer 112) is thicker, therefore reflector adopts metal completely reflecting mirror structure to have the function of heat radiation concurrently simultaneously, the inner heat produced of transformer can be conducted out.
Wherein, the first electrode layer 100 and the 4th electrode layer 112 are used as extraction electrode with the input and output electric current, transparent owing to not needing work light, therefore can adopt the materials such as metal, alloy, pottery, glass, plastics, conductive oxide to form individual layer and/or multi-layer compound structure, wherein be preferably the metal of low-resistivity, for example Cu.Preferably, the thickness that can pass through to increase metal electrode layer, to reduce resistance, plays heat sink work in order to heat radiation simultaneously.
Be pointed out that, the material characteristic parameter that is decided by photoelectric conversion layer and electric light conversion layer due to input threshold voltage and the output voltage of this photoelectricity electric energy conversion module 2, as energy gap, doping content etc., therefore by regulating corresponding characterisitic parameter to realize transformation.Further, can be according to actual needs, compare to improve the transformation amplitude by the number of adjusting electric light conversion layer 102 and photoelectric conversion layer 110, realize the expection transformation, for example, as shown in Figure 8, photoelectricity electric energy conversion module 2 comprises an electric light conversion layer 102 and two photoelectric conversion layer 110A and 110B, this structure, with respect to the photoelectricity electric energy conversion module 2 that comprises identical single electric light conversion layer and single photoelectric conversion layer, has increased the transformation of vertical stratification, therefore transformation ratio is larger.
In one embodiment of the invention, using the first electrode layer 100, be formed on the electric light conversion layer 102 on the first electrode layer 100 and be formed on the second electrode lay 104 on electric light conversion layer 102 as an electric light transformational structure; In like manner using third electrode layer 108, be formed on the photoelectric conversion layer 110 on third electrode layer 108 and be formed on the 4th electrode layer 112 on photoelectric conversion layer 110 as an opto-electronic conversion structure.This Semi-conductor DC photoelectric transformer can also comprise that multilayer replaces stacking electric light transformational structure and opto-electronic conversion structure in vertical direction.Comprise separator between every adjacent electric light transformational structure and opto-electronic conversion structure, further to improve the direct voltage transformation ratio.Wherein, a plurality of electric light transformational structures (or a plurality of opto-electronic conversion structure) are series connection mutually, and the structure of each electric light transformational structure (or each opto-electronic conversion structure) can be with reference to the described structure of above-described embodiment.Figure 9 shows that the Semi-conductor DC photoelectric transformer structural representation that there is in vertical direction two electric light transformational structures and an opto-electronic conversion structure, wherein, comprise respectively the first separator 106 and the second separator 107 between electric light transformational structure and opto-electronic conversion structure.Be pointed out that, in this structure, except first and last electric light (or photoelectricity) transformational structure, the first electrode layer and the 4th electrode layer of middle each electric light transformational structure and opto-electronic conversion structure can not be selected metal electrode, and select heavily doped semi-conducting material GaAs, GaN, the GaP identical with the third electrode layer with second, AlGaInP, AlGaInN, AlGaInAs, or conductive, transparent metal oxide materials ITO, SnO
2, ZnO and combination thereof, thereby be conducive to light transmition.
The invention provides a kind of photoelectricity electric energy conversion module 2, by the input in photoelectricity electric energy conversion module 2, the electric light conversion layer is set, the light radiation that utilizes the semiconductor electronic transition between the energy levels to produce, direct current is converted to light to be transmitted, photoelectric conversion layer is set light is converted into to electric energy output at output, because the voltage of input and output unit cell depends on respectively electric light conversion layer and photoelectric conversion layer properties of materials parameter and number, therefore this transformer can directly be realized the transformation of direct voltage.
In a preferred embodiment of the invention, as shown in figure 10, the semiconductor optoelectronic electric energy conversion system also comprises adjustment module 3, and adjustment module 3 can be fixed on substrate 1, also can independently arrange.Adjustment module 3 is connected with total output (out) with total input (in) of a plurality of photoelectricity electric energy conversion module 2, for the running parameter by the total output of monitoring, the running parameter of the total input of feedback regulation, carry out voltage stabilizing or pressure regulation to maintain the semiconductor optoelectronic electric energy conversion system, or photoelectricity electric energy conversion module 2 is operated on optimum state or particular job point.Figure 11 is the fundamental diagram of the semiconductor optoelectronic electric energy conversion system shown in Figure 10.As shown in figure 11, at first adjustment module 3 surveys the current/voltage value of a plurality of opto-electronic conversion structures 22 of output, micro-chip processor in adjustment module 3 is done computing to probe value and is drawn command adapted thereto subsequently, and according to instruction, a plurality of electric light transformational structures 21 to input are regulated and controled control element.Particularly, regulating element can be power MOSFET, JFET, thyristor, BJT, variable resistor etc.
In a preferred embodiment of the invention, photoelectricity electric energy conversion module 2 is the platypelloid type device, and its input and output are the diagonal cross-distribution.Particularly, as shown in Figure 12 (a), photoelectricity electric energy conversion module 2 can be the flattened rectangular sheet, and its input is anodal to be positioned on a diagonal L 1 of main body with the input negative pole, and its output cathode and output negative pole are positioned on another diagonal L 2 of main body.Preferably, input both positive and negative polarity, output both positive and negative polarity can also be separately positioned on to the position near end face and bottom surface.It should be noted that, photoelectricity electric energy conversion module 2 can also be flat round sheet, flat round rectangle sheet etc.The end face view that Figure 12 (b) is the photoelectricity electric energy conversion module 2 shown in Figure 12 (a); The bottom view that Figure 12 (c) is the photoelectricity electric energy conversion module 2 shown in Figure 12 (a).In this embodiment, the design of platypelloid type device, increased on the one hand the transmission area of work light, is conducive on the other hand the heat radiation of the semiconductor optoelectronic electric energy conversion system after encapsulation and integration; The lead-in wire of input and output is diagonal and distributes, and is conducive to straight line between modules and connects, and connects up clear, and the induction reactance that circuit produces etc. are disturbed less, and between the electrode of inside modules, insulation distance is long, and insulation characterisitic is better.
In one embodiment of the invention, in order to expand output voltage, can show as Figure 13, a plurality of photoelectricity electric energy conversion module 2 are in sequential series.A plurality of photoelectricity electric energy conversion module 2 face up and reverse side is alternately arranged upward, can be connected in turn by shorter, Uncrossed lead-in wire, consume to reduce wire rod, and reduce electromagnetic interference.
In one embodiment of the invention, in order to expand power output, can show as Figure 14, first, by after a plurality of photoelectricity electric energy conversion module 2 series connection, then several series arms be carried out to parallel connection.Preferably, the counterflow-preventing element D that can also connect on each series arm.When counterflow-preventing element D is not set, when some series arm faults, owing to himself having certain resistance, can be considered a load, now other series arms can be used as power supply, are carried in this " load " upper, can not obtain normal Voltage-output.After counterflow-preventing element D is set, due to its one-way conduction characteristic, can avoid the generation of above-mentioned situation, guarantee normal Voltage-output.
In one embodiment of the invention, the semiconductor optoelectronic electric energy conversion system can be by adopting altogether input and output or not altogether to form insulating power supply or non-insulating power supply.For common transformation system, the more difficult realization of insulating power supply; And semiconductor optoelectronic electric energy conversion system of the present invention is easy to realize due to himself characteristic.
In one embodiment of the invention, as shown in figure 15, the semiconductor optoelectronic electric energy conversion system arranges many output lead-in wires between a plurality of photoelectricity electric energy conversion module 2, exports different output voltages, is applicable to the situation of simultaneously powering for the equipment of multiple different operating voltage.
At least there is following advantage according to the semiconductor optoelectronic electric energy conversion system of the embodiment of the present invention:
(1) this system comprises a plurality of photoelectricity electric energy conversion module, and each module not only can self realize the conversion of DC-DC electric energy, can also realize DC-AC, AC-DC or the conversion of AC-AC electric energy, and connects to realize power and/or voltage expansion by flexible connection in series-parallel.
(2) the photoelectricity electric energy conversion module in this system and substrate are all flat pattern, and specific area is large, is beneficial to heat radiation.
(3) this system adopts the encapsulation of diagonal distribution of electrodes, succinct attractive in appearancely between line does not intersect, for assembly working offers convenience, can reduce the voltage difference between adjacent photoelectricity electric energy conversion module simultaneously, increase the insulation distance between electrode, thereby improve insulation characterisitic, can effectively prevent from puncturing.
(4) after the input circuit of this system provides a fixing input voltage, on output circuit, can establish a plurality of taps, export different voltage simultaneously, meet different user demands.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the characteristics of this embodiment or example description.In this manual, the schematic statement of above-mentioned term not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or characteristics can be with suitable mode combinations in any one or more embodiment or example.
Although the above has illustrated and has described embodiments of the invention, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, those of ordinary skill in the art is not in the situation that break away from principle of the present invention and aim can be changed above-described embodiment within the scope of the invention, modification, replacement and modification.
Claims (11)
1. a semiconductor optoelectronic electric energy conversion system, is characterized in that, comprising:
Substrate;
A plurality of photoelectricity electric energy conversion module, series connection and/or in parallel mutually between described a plurality of photoelectricity electric energy conversion module, to realize the expansion of voltage and/or power, wherein, described photoelectricity electric energy conversion module further comprises:
Separator, described separator is transparent to the work light of described photoelectricity electric energy conversion module;
Be formed on the one or more electric light transformational structure on described separator, for inputting electric energy, be converted to described work light emission; With
Be formed on the one or more opto-electronic conversion structure on described separator, for described work light is converted to the output electric energy.
2. semiconductor optoelectronic electric energy conversion system as claimed in claim 1, is characterized in that, wherein, and frequency spectrum coupling between the absorption spectrum of described opto-electronic conversion structure and described electric light transformational structure emission spectrum.
3. semiconductor optoelectronic electric energy conversion system as claimed in claim 1 or 2, it is characterized in that, described photoelectricity electric energy conversion module is DC-DC type photoelectricity electric energy conversion module, AC-AC type photoelectricity electric energy conversion module, AC-DC type photoelectricity electric energy conversion module or DC-AC type photoelectricity electric energy conversion module.
4. semiconductor optoelectronic electric energy conversion system as claimed in claim 1 or 2, it is characterized in that, in described photoelectricity electric energy conversion module, described electric light transformational structure comprises light-emitting diode, resonance light-emitting diode, laser diode, quantum dot light emitting device or organic luminescent device.
5. semiconductor optoelectronic electric energy conversion system as claimed in claim 1 or 2, is characterized in that, in described photoelectricity electric energy conversion module, described opto-electronic conversion structure comprises semiconductor photovoltaic cells, quantum dot photovoltaic battery or organic material photovoltaic cell.
6. semiconductor optoelectronic electric energy conversion system as claimed in claim 1 or 2, it is characterized in that, in described photoelectricity electric energy conversion module, described separator is insulating material, between described electric light transformational structure, described electric light transformational structure, by the insulation characterisitic of material itself, is isolated; Perhaps, described separator is semi-conducting material, between described electric light transformational structure and described separator, between described opto-electronic conversion structure and described separator, by anti-PN junction structure partially, is isolated.
7. semiconductor optoelectronic electric energy conversion system as described as claim 1-6 any one, is characterized in that, described photoelectricity electric energy conversion module is the flat pattern device, and the input of described photoelectricity electric energy conversion module and output are the diagonal cross-distribution.
8. semiconductor optoelectronic electric energy conversion system as described as claim 1-6 any one, is characterized in that, described semiconductor optoelectronic electric energy conversion system also comprises:
Adjustment module, described adjustment module is connected with total output with total input of described a plurality of photoelectricity electric energy conversion module, for the running parameter by the described total output of monitoring, the running parameter of the described total input of feedback regulation.
9. semiconductor optoelectronic electric energy conversion system as claimed in claim 1 or 2, is characterized in that, in described photoelectricity electric energy conversion module, and the refraction coefficient of the layers of material on light transmition path coupling.
10. semiconductor optoelectronic electric energy conversion system as claimed in claim 1 or 2, is characterized in that, in described photoelectricity electric energy conversion module, also comprises optical trap, and described optical trap is for being limited in described photoelectricity electric energy conversion module inside by light.
11. semiconductor optoelectronic electric energy conversion system as claimed in claim 1 or 2 is characterized in that described separator comprises Al
2O
3, AlN, SiO
2, MgO, Si
3N
4, BN, diamond, LiAlO
2, LiGaO
2, GaAs, SiC, TiO
2, ZrO
2, SrTiO
3, Ga
2O
3, ZnS, SiC, MgAl
2O
4, LiNbO
3, LiTaO
3, yttrium-aluminium-garnet (YAG) crystal, KNbO
3, LiF, MgF
2, BaF
2, GaF
2, LaF
3, BeO, GaP, a kind of and combination in GaN and rare earth oxide (REO).
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| CN2011103560054A CN102496649A (en) | 2011-11-10 | 2011-11-10 | Semi-conductor DC photoelectric transformer |
| CN2011103560054 | 2011-11-10 | ||
| CN201210326705 | 2012-09-05 | ||
| CN201210326705.3 | 2012-09-05 | ||
| CN2012103267053 | 2012-09-05 | ||
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023134418A1 (en) * | 2022-01-17 | 2023-07-20 | 深圳市思坦科技有限公司 | Integrated led structure and manufacturing method |
| CN116488487A (en) * | 2023-04-06 | 2023-07-25 | 广东工业大学 | Novel alternating-current multi-level photon electric energy converter topology and modulation mode thereof |
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| WO2023134418A1 (en) * | 2022-01-17 | 2023-07-20 | 深圳市思坦科技有限公司 | Integrated led structure and manufacturing method |
| CN116488487A (en) * | 2023-04-06 | 2023-07-25 | 广东工业大学 | Novel alternating-current multi-level photon electric energy converter topology and modulation mode thereof |
| CN116488487B (en) * | 2023-04-06 | 2023-11-17 | 广东工业大学 | Modulation method of alternating-current multi-level photon electric energy converter topology |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013067968A1 (en) | 2013-05-16 |
| TW201320561A (en) | 2013-05-16 |
| CN103426967B (en) | 2017-02-22 |
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