WO2013051201A1 - Système de circuit de transformation de puissance à trois niveaux - Google Patents

Système de circuit de transformation de puissance à trois niveaux Download PDF

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Publication number
WO2013051201A1
WO2013051201A1 PCT/JP2012/005841 JP2012005841W WO2013051201A1 WO 2013051201 A1 WO2013051201 A1 WO 2013051201A1 JP 2012005841 W JP2012005841 W JP 2012005841W WO 2013051201 A1 WO2013051201 A1 WO 2013051201A1
Authority
WO
WIPO (PCT)
Prior art keywords
conversion circuit
power conversion
semiconductor chip
conductor
circuit system
Prior art date
Application number
PCT/JP2012/005841
Other languages
English (en)
Japanese (ja)
Inventor
滝沢　聡毅
Original Assignee
富士電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士電機株式会社 filed Critical 富士電機株式会社
Publication of WO2013051201A1 publication Critical patent/WO2013051201A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
    • H02H7/1225—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters responsive to internal faults, e.g. shoot-through
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/487—Neutral point clamped inverters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H37/00—Thermally-actuated switches
    • H01H37/74—Switches in which only the opening movement or only the closing movement of a contact is effected by heating or cooling
    • H01H37/76—Contact member actuated by melting of fusible material, actuated due to burning of combustible material or due to explosion of explosive material
    • H01H37/761—Contact member actuated by melting of fusible material, actuated due to burning of combustible material or due to explosion of explosive material with a fusible element forming part of the switched circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Definitions

  • the opening means in the first invention operates by utilizing an overheating phenomenon of a semiconductor switch or a diode that has failed or is destroyed.
  • FIG. 1 is a structural diagram showing a first embodiment of the present invention.
  • FIG. 3 is a structural diagram showing a specific example of the first embodiment of the present invention.
  • FIG. 3 is a structural diagram showing a second embodiment of the present invention. It is a structural diagram which shows the 3rd Example of this invention.
  • FIG. 6 is a structural diagram showing a fourth embodiment of the present invention. It is a principle figure of the 5th Example of this invention. It is a specific structural diagram of the fifth embodiment.
  • FIG. 10 is a structural diagram showing a sixth embodiment. It is a 7th Example conceptual diagram. It is the structure figure which materialized the 7th conceptual diagram. It is a structural diagram showing an eighth embodiment.
  • FIG. 10 is a structural diagram showing a ninth embodiment.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inverter Devices (AREA)

Abstract

L'invention concerne, dans les circuits de transformation à trois niveaux, trois phases, un procédé par lequel un fusible est introduit dans chaque branche de phase, en tant que circuit protecteur vis-à-vis d'un dysfonctionnement de composant. Les fusibles sont de grande dimension et coûteux et l'inductance de câblage et la perte sont accrues. Selon l'invention, un moyen d'ouverture est prévu, lequel débouche électriquement sur le côté électrode positive ou le côté électrode négative de chaque branche de phase à travers laquelle le courant principal pour un commutateur à semi-conducteurs ou une diode circule, ou un côté borne d'un commutateur à semi-conducteurs bidirectionnel, et le composant en dysfonctionnement est déconnecté de l'alimentation électrique en courant continu, afin de poursuivre le fonctionnement durant un dysfonctionnement de composant semi-conducteur dans un circuit de transformation de puissance à trois niveaux utilisant le commutateur à semi-conducteurs bidirectionnel. Le moyen d'ouverture est une technique structurelle basée sur une action active utilisant la détection d'un courant de court-circuit d'alimentation électrique et une action utilisant un changement physique résultant de la surchauffe.
PCT/JP2012/005841 2011-10-04 2012-09-13 Système de circuit de transformation de puissance à trois niveaux WO2013051201A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011219705A JP2013081299A (ja) 2011-10-04 2011-10-04 ３レベル電力変換回路システム
JP2011-219705 2011-10-04

Publications (1)

Publication Number Publication Date
WO2013051201A1 true WO2013051201A1 (fr) 2013-04-11

Family

ID=48043387

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/005841 WO2013051201A1 (fr) 2011-10-04 2012-09-13 Système de circuit de transformation de puissance à trois niveaux

Country Status (2)

Country Link
JP (1) JP2013081299A (fr)
WO (1) WO2013051201A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57107530A (en) * 1980-12-25 1982-07-05 Nippon Electric Co Overcurrent protecting element
JPS58162538U (ja) * 1982-04-23 1983-10-29 シャープ株式会社 温度検知型保護装置
JPH0391641U (fr) * 1989-12-28 1991-09-18
JPH0574295A (ja) * 1991-09-17 1993-03-26 Matsushita Refrig Co Ltd 温度ヒユーズ及び過電流保護装置
JPH08167370A (ja) * 1994-12-14 1996-06-25 Hitachi Ltd 集積回路装置及びそれを用いたパワーモジュール
JP2003259654A (ja) * 2002-03-05 2003-09-12 Toshiba Corp 電力変換装置
WO2010095241A1 (fr) * 2009-02-20 2010-08-26 東芝三菱電機産業システム株式会社 Convertisseur de puissance

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57107530A (en) * 1980-12-25 1982-07-05 Nippon Electric Co Overcurrent protecting element
JPS58162538U (ja) * 1982-04-23 1983-10-29 シャープ株式会社 温度検知型保護装置
JPH0391641U (fr) * 1989-12-28 1991-09-18
JPH0574295A (ja) * 1991-09-17 1993-03-26 Matsushita Refrig Co Ltd 温度ヒユーズ及び過電流保護装置
JPH08167370A (ja) * 1994-12-14 1996-06-25 Hitachi Ltd 集積回路装置及びそれを用いたパワーモジュール
JP2003259654A (ja) * 2002-03-05 2003-09-12 Toshiba Corp 電力変換装置
WO2010095241A1 (fr) * 2009-02-20 2010-08-26 東芝三菱電機産業システム株式会社 Convertisseur de puissance

Also Published As

Publication number Publication date
JP2013081299A (ja) 2013-05-02

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