WO2013047589A1 - 希土類元素を含んだ溶射用粉末及び皮膜、並びに前記皮膜を備えた部材 - Google Patents
希土類元素を含んだ溶射用粉末及び皮膜、並びに前記皮膜を備えた部材 Download PDFInfo
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- WO2013047589A1 WO2013047589A1 PCT/JP2012/074719 JP2012074719W WO2013047589A1 WO 2013047589 A1 WO2013047589 A1 WO 2013047589A1 JP 2012074719 W JP2012074719 W JP 2012074719W WO 2013047589 A1 WO2013047589 A1 WO 2013047589A1
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- rare earth
- thermal spraying
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- spraying powder
- powder
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- 239000000843 powder Substances 0.000 title claims abstract description 112
- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 91
- 239000007921 spray Substances 0.000 title abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000003085 diluting agent Substances 0.000 claims abstract description 6
- 239000010955 niobium Substances 0.000 claims abstract description 6
- 230000000737 periodic effect Effects 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- 239000011701 zinc Substances 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 5
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 5
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 5
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 5
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011733 molybdenum Substances 0.000 claims abstract description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010937 tungsten Substances 0.000 claims abstract description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 3
- 238000007751 thermal spraying Methods 0.000 claims description 93
- 239000011248 coating agent Substances 0.000 claims description 35
- 238000000576 coating method Methods 0.000 claims description 35
- 238000005507 spraying Methods 0.000 claims description 28
- 239000012895 dilution Substances 0.000 claims description 17
- 238000010790 dilution Methods 0.000 claims description 17
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 abstract description 34
- 239000000203 mixture Substances 0.000 abstract description 4
- 239000006104 solid solution Substances 0.000 abstract description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 46
- 230000003628 erosive effect Effects 0.000 description 34
- 239000004065 semiconductor Substances 0.000 description 15
- 239000002994 raw material Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 238000007865 diluting Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000005245 sintering Methods 0.000 description 8
- 238000011109 contamination Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000011575 calcium Substances 0.000 description 5
- 238000005469 granulation Methods 0.000 description 5
- 230000003179 granulation Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052706 scandium Inorganic materials 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000007750 plasma spraying Methods 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010285 flame spraying Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052705 radium Inorganic materials 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
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- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
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- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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Definitions
- the present invention relates to a thermal spraying powder containing a rare earth element.
- the present invention also relates to a film containing a rare earth element and a member provided with such a film.
- fine processing of a semiconductor substrate such as a silicon wafer may be performed by plasma etching which is a kind of dry etching.
- plasma etching which is a kind of dry etching.
- members in the semiconductor device manufacturing apparatus that are exposed to reactive plasma may be eroded (damaged) to generate particles.
- the generated particles are deposited on the semiconductor substrate, it becomes difficult to perform fine processing as designed, or the semiconductor substrate is contaminated by elements contained in the particles. Therefore, it has been conventionally performed to provide a thermal spray coating containing a rare earth element on a member exposed to reactive plasma during the etching process, thereby protecting the member from plasma erosion (see, for example, Patent Document 1). ).
- an object of the present invention is to provide a thermal spraying powder suitable for forming a thermal spray coating that is less likely to generate large particles when subjected to plasma erosion.
- Another object of the present invention is to provide a film that does not easily generate large-size particles when subjected to plasma erosion, and a member having such a film on the surface.
- the first aspect of the present invention provides a thermal spraying powder containing a rare earth element and a Group 2 element of the periodic table.
- the rare earth element and the Group 2 element are contained in the thermal spraying powder in the form of an oxide, for example.
- the thermal spraying powder may further include a diluting element that is an element other than rare earth elements and Group 2 elements and other than oxygen, for example, in the form of an oxide.
- the dilution element may be, for example, one or more elements selected from titanium, zirconium, hafnium, vanadium, niobium, tantalum, zinc, boron, aluminum, gallium, silicon, molybdenum, tungsten, manganese, germanium, and phosphorus.
- the diluting element may be a combination of zirconium and one or more elements other than rare earth elements and Group 2 elements and oxygen and zirconium.
- a coating obtained by spraying the thermal spraying powder of the first aspect is provided.
- a coating containing a rare earth element and a Group 2 element of the periodic table is provided.
- thermo spraying powder suitable for forming a thermal spray coating that is less likely to generate large particles when subjected to plasma erosion. Further, according to the present invention, it is possible to provide a coating that hardly generates large-size particles when subjected to plasma erosion, and a member that has such a coating on the surface.
- the thermal spraying powder of this embodiment includes a rare earth element and a Group 2 element that is an element belonging to Group 2 of the periodic table.
- the rare earth elements are scandium (element symbol Sc), yttrium (element symbol Y), lanthanum (element symbol La), cerium (element symbol Ce), praseodymium (element symbol Pr), neodymium (element symbol Nd). ), Promethium (element symbol Pm), samarium (element symbol Sm), europium (element symbol Eu), gadolinium (element symbol Gd), terbium (element symbol Tb), dysprosium (element symbol Dy), holmium (element symbol Ho) Erbium (element symbol Er), thulium (element symbol Tm), ytterbium (element symbol Yb) and lutetium (element symbol Lu).
- Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Dy, Er, and Yb which are present in a relatively large amount in the earth's crust, particularly Sc, Y, La, Ce, and Nd are preferable.
- the Group 2 elements are beryllium (element symbol Be), magnesium (element symbol Mg), calcium (element symbol Ca), strontium (element symbol Sr), barium (element symbol Ba), and radium (element Symbol Ra).
- Mg, Ca, Sr, and Ba particularly Mg, Ca, and Sr, which are present in a relatively large amount in the crust are preferable.
- the content of rare earth elements in the thermal spraying powder is preferably 20 mol% or more in terms of oxide, more preferably 25 mol% or more, still more preferably 30 mol% or more, and particularly preferably 35 mol% or more.
- Rare earth element compounds such as rare earth oxides have high chemical stability and excellent plasma erosion resistance. Therefore, as the content of the rare earth element in the thermal spraying powder increases, the plasma erosion resistance of the coating obtained by thermal spraying the thermal spraying powder tends to improve.
- the content of rare earth elements in the thermal spraying powder is also preferably 90 mol% or less, more preferably 80 mol% or less, still more preferably 70 mol% or less, and particularly preferably 60 mol% or less in terms of oxide.
- Rare earth elements are expensive, and rare earth elements have an unstable supply due to the uneven distribution of their origins. In this respect, there is an advantage that the raw material supply risk of the thermal spraying powder decreases as the content of the rare earth element in the thermal spraying powder decreases.
- the content of the Group 2 element in the thermal spraying powder is preferably 3 mol% or more in terms of oxide, more preferably 3.5 mol% or more, further preferably 4 mol% or more, and particularly preferably 4.5 mol%. That's it.
- the content of the Group 2 element in the thermal spraying powder increases, the size of particles generated when the coating obtained by spraying the thermal spraying powder is subjected to plasma erosion decreases. The reason for this is that since the plasma erosion resistance of the Group 2 element compound is lower than that of the rare earth element compound, the weak points that are susceptible to attack by plasma are dispersed in the film by the addition of the Group 2 element. It is thought that it will be. On the other hand, when weak points are not dispersed in the film, plasma attacks concentrate on the few weak points in the film, and as a result, large particles may be generated.
- the content of the Group 2 element in the thermal spraying powder is also preferably 20 mol% or less in terms of oxide, more preferably 15 mol% or less, further preferably 12 mol% or less, and particularly preferably 10 mol% or less.
- the Group 2 element compound has a relatively low plasma erosion resistance. Therefore, as the content of the Group 2 element in the thermal spraying powder decreases, the plasma erosion resistance of the coating obtained by spraying the thermal spraying powder tends to improve.
- the thermal spraying powder is a rare earth element as a dilution element added to the thermal spraying powder for the purpose of reducing the ratio of the content of the rare earth element and the Group 2 element in the thermal spraying powder and the coating obtained by thermal spraying the thermal spraying powder.
- An element other than the element and the Group 2 element and other than oxygen may be further included.
- Specific examples of the diluted element include, for example, titanium (element symbol Ti), zirconium (element symbol Zr), hafnium (element symbol Hf), vanadium (element symbol V), niobium (element symbol Nb), tantalum (element symbol Ta).
- any element other than rare earth elements and Group 2 elements and other than oxygen is not particularly limited.
- zirconium is used as a diluent element, there is an advantage that the plasma erosion resistance of the coating obtained by spraying the thermal spraying powder is improved as compared with the case where other diluent elements are used.
- the content of the dilution element in the thermal spraying powder is preferably 10 mol% or more in terms of oxide, more preferably 20 mol% or more, still more preferably 30 mol% or more, and particularly preferably 40 mol% or more.
- the raw material supply risk and the raw material cost of the thermal spraying powder can be reduced by suppressing the amount of rare earth elements used.
- the amount of rare earth elements and group 2 elements contained in the particles generated when the thermal spray coating obtained by spraying the thermal spraying powder is subjected to plasma erosion is relatively small, so that the rare earth in the particles The risk of contamination by elements and Group 2 elements in semiconductor substrates such as silicon wafers is also reduced.
- the content of the dilution element in the thermal spraying powder is also preferably 60 mol% or less in terms of oxide, more preferably 57 mol% or less, still more preferably 55 mol% or less, and particularly preferably 48 mol% or less.
- the plasma erosion resistance of the diluted element compound is generally lower than the plasma erosion resistance of the rare earth element compound. Therefore, as the content of the dilution element in the thermal spraying powder decreases, the plasma erosion resistance of the coating obtained by thermal spraying the thermal spraying powder tends to improve.
- the thermal spraying powder is formed, for example, from a mixture of a rare earth element compound and a Group 2 element compound, or a compound or solid solution containing a rare earth element and a Group 2 element.
- a typical example of the rare earth element compound is a rare earth element oxide.
- a typical example of a Group 2 element compound is a Group 2 element oxide.
- a typical example of a compound or solid solution containing a rare earth element and a Group 2 element is a complex oxide of a rare earth element and a Group 2 element.
- the thermal spraying powder contains a diluting element
- the thermal spraying powder is, for example, a mixture of a rare earth element compound, a Group 2 element compound and a diluting element compound, or a rare earth element and a Group 2 element and dilution. It is formed from a compound containing an element or a solid solution.
- a powder composed of a compound of a Group 2 element such as a Group 2 element oxide is mixed with a powder composed of a rare earth element compound such as a rare earth element oxide, and if necessary, a compound of a diluting element It is manufactured by further mixing (for example, oxide).
- the rare earth element powder used is 10 ⁇ m or less, more specifically 6 ⁇ m or less, 3 ⁇ m or less, or 1 ⁇ m or less in terms of volume ratio in the powder, as measured by a laser scattering / diffraction particle size distribution analyzer. It is preferable to occupy 90% or more.
- a raw material powder containing a rare earth element compound or simple substance and a Group 2 element compound or simple substance powder, and further containing a diluting element compound or simple substance, if necessary, is granulated and sintered.
- the rare earth element, the Group 2 element, and the dilution element are present in the raw material powder in a form other than the oxide, for example, in the form of a simple substance, a hydroxide, or a salt, they may be present during the sintering process Can be converted to oxides.
- the raw material powder is granulated by mixing the raw material powder in an appropriate dispersion medium and, if necessary, adding a binder. You may carry out by carrying out spray granulation of the slurry formed, and you may carry out directly from raw material powder by rolling granulation or compression granulation. Sintering of the raw material powder after granulation may be performed in any of air, oxygen atmosphere, vacuum, and inert gas atmosphere. However, in order to convert the element in the raw material powder existing in a form other than the oxide into the oxide, it is preferable to carry out in the air or in an oxygen atmosphere.
- the sintering temperature is not particularly limited, but is preferably 1000 to 1700 ° C, more preferably 1100 to 1700 ° C, and still more preferably 1200 to 1700 ° C.
- the maximum temperature holding time during sintering is not particularly limited, but is preferably 10 minutes to 24 hours, more preferably 30 minutes to 24 hours, and further preferably 1 to 24 hours.
- the powder for thermal spraying of this embodiment is coated on the surface of a member in a semiconductor device manufacturing apparatus or other members by a thermal spraying method such as a plasma spraying method, a high-speed flame spraying method, a flame spraying method, an explosion spraying method, or an aerosol deposition method. It is used in applications that form
- the coating obtained by spraying the thermal spraying powder contains at least a rare earth element and a Group 2 element in the form of a compound such as an oxide.
- the size of the rare earth element compound portion in the thermal spray coating is preferably 20 ⁇ m 2 or less, more preferably 2 ⁇ m 2 or less, and even more preferably 0.2 ⁇ m 2 or less, as observed by a reflection electron image obtained by a field emission scanning electron microscope. Particularly preferably, it is 0.02 ⁇ m 2 or less. As the size of the rare earth element compound portion decreases, the size of particles generated from the sprayed coating when subjected to plasma erosion can be reduced.
- the thickness of the sprayed coating is not particularly limited, and may be, for example, 30 to 1000 ⁇ m. However, it is preferably 50 to 500 ⁇ m, more preferably 80 to 300 ⁇ m.
- the thermal spraying powder of this embodiment contains a rare earth element and a Group 2 element. Therefore, a coating containing a rare earth element and a Group 2 element obtained by spraying this thermal spraying powder has a high plasma erosion resistance as an effect of the rare earth element, while a size of the film as an effect of the Group 2 element. It has the property of not generating large particles. That is, according to the present embodiment, it is possible to provide a thermal spraying powder suitable for forming a thermal spray coating that hardly generates large-size particles when subjected to plasma erosion. It is also possible to provide a coating that does not easily generate large particles when subjected to plasma erosion, and a member that has such a coating on the surface.
- the thermal spraying powder of the present embodiment contains a Group 2 element in addition to the rare earth element, and in some cases, further contains a rare earth element and a Group 2 element and a diluent element other than oxygen. Therefore, the amount of rare earth elements that are expensive and unstable in supply can be suppressed, and the raw material supply risk of the thermal spray powder can be reduced. In addition, since the amount of rare earth elements contained in the particles generated when the thermal spray coating obtained by spraying the thermal spray powder is subjected to plasma erosion is relatively small, contamination by rare earth elements in the particles is reduced to silicon. There is little risk of occurrence on a semiconductor substrate such as a wafer.
- the embodiment may be modified as follows.
- the thermal spraying powder of the above embodiment may contain two or more rare earth elements, preferably three or more rare earth elements. That is, it may contain two or more, preferably three or more elements selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. Good.
- the content of the rare earth element in the particles generated when the coating obtained by spraying the thermal spraying powder is subjected to plasma erosion is dispersed for each type of rare earth element, The possibility that the content of each rare earth element in the deposited particles exceeds an allowable level can be reduced.
- the content of each rare earth element in the thermal spraying powder is preferably 3 mol% or more in terms of oxide, more preferably 5 mol% or more, and further preferably 10 mol% or more.
- the content of each rare earth element in the thermal spraying powder is preferably 50 mol% or less in terms of oxide, more preferably 40 mol% or less, still more preferably 30 mol% or less, and particularly preferably 25 mol% or less.
- the thermal spraying powder of the above embodiment may contain two or more types, preferably three or more types of Group 2 elements. That is, two or more, preferably three or more elements selected from Be, Mg, Ca, Sr, Ba and Ra may be included.
- the content of the Group 2 element in the particles generated when the coating obtained by thermal spraying the powder for thermal spraying is subjected to plasma erosion is dispersed for each type of the Group 2 element, The possibility that the content of each Group 2 element in the particles deposited on the semiconductor substrate exceeds an allowable level can be reduced.
- the content of each Group 2 element in the thermal spraying powder is preferably 1 mol% or more, more preferably 1.5 mol% or more, further preferably 2 mol% or more, particularly preferably 2.5 mol in terms of oxide.
- each Group 2 element in the thermal spraying powder is also preferably 15 mol% or less in terms of oxide, more preferably 12 mol% or less, still more preferably 10 mol% or less, and particularly preferably 8 mol% or less. is there.
- the thermal spraying powder of the above embodiment may contain two or more types, preferably three or more types of dilution elements.
- two or more, preferably three or more elements selected from Ti, Zr, Hf, V, Nb, Ta, Zn, B, Al, Ga, Si, Mo, W, Mn, Ge, and P may be included.
- the content of the dilution element in the particles generated when the coating obtained by spraying the thermal spray powder is subjected to plasma erosion is dispersed for each type of the dilution element. The possibility that the content of each dilution element in the deposited particles exceeds the allowable level can be reduced.
- the content of each dilution element in the thermal spraying powder is preferably 5 mol% or more in terms of oxide, more preferably 10 mol% or more, further preferably 15 mol% or more, and particularly preferably 20 mol% or more.
- the content of each dilution element in the thermal spraying powder is also preferably 40 mol% or less, more preferably 30 mol% or less, still more preferably 20 mol% or less, and particularly preferably 15 mol% or less in terms of oxide.
- use of Zr (zirconium) in combination with other diluent elements is preferable in that the plasma erosion resistance of a coating obtained by spraying a thermal spraying powder is improved by addition of zirconium.
- the film containing rare earth elements and Group 2 elements is not limited to being formed by spraying the thermal spraying powder as in the above-described embodiment, but, for example, chemical vapor deposition (CVD) or physical vapor deposition It may be formed by a technique other than thermal spraying, such as a method (PVD).
- the thickness of the film containing a rare earth element and a Group 2 element formed by a technique other than thermal spraying may be, for example, 0.1 to 100 ⁇ m, preferably 0.5 to 50 ⁇ m, more preferably 1 to 30 ⁇ m.
- the thermal spraying powders of Examples 1 to 5 and Comparative Examples 1 and 2 containing rare earth elements and the thermal spraying powder of Comparative Example 3 containing no rare earth elements were prepared.
- the powders for thermal spraying of Examples 1 to 5 are rare earth element oxide powders, Group 2 element oxide powders, oxides of diluting elements other than rare earth elements and Group 2 elements, and oxygen other than oxygen. It was produced by mixing with powder, granulating and sintering.
- the thermal spraying powder of Comparative Example 1 was produced by granulating and sintering a rare earth oxide powder.
- the thermal spraying powder of Comparative Example 2 is prepared by mixing, and granulating and sintering, a rare earth element oxide powder and a rare earth element and Group 2 element oxide powder of a diluting element other than oxygen. Manufactured by.
- the powder for thermal spraying of Comparative Example 3 is a mixture of an oxide powder of a Group 2 element and a powder of an oxide of a diluting element other than a rare earth element and a Group 2 element other than oxygen, and is granulated and sintered. It was manufactured by doing. Details of each thermal spraying powder are as shown in Table 1.
- Type of rare earth element indicates the type of rare earth element contained in each thermal spraying powder.
- ratio of rare earth element oxide column in Table 1 shows the molar ratio of the rare earth element oxide in each thermal spraying powder for each type of rare earth element.
- Type of Group 2 element indicates the type of Group 2 element contained in each thermal spraying powder.
- ratio of group 2 element oxide column in Table 1 shows the molar ratio of group 2 element oxide in each thermal spraying powder for each type of group 2 element.
- the “size of rare earth element compound portion in coating” column of Table 1 indicates the size of the rare earth element compound portion in the thermal spray coating obtained by spraying each thermal spraying powder under the thermal spraying conditions shown in Table 2 at atmospheric pressure. . This size was measured by observing the sprayed coating with a reflection electron image by a field emission scanning electron microscope.
- thermal spraying powders of Examples 1 to 5 and Comparative Examples 1 to 3 were subjected to atmospheric pressure plasma spraying under the thermal spraying conditions shown in Table 2, and blasted with a brown alumina abrasive (A # 40), 20 mm ⁇ 20 mm ⁇ 2 mm A sprayed coating having a thickness of 200 ⁇ m was formed on the surface of an Al alloy (A6061) plate having the dimensions described above.
- the results of evaluating the plasma erosion resistance of the obtained thermal spray coating are shown in the “plasma erosion resistance” column of Table 1.
- each sprayed coating was mirror-polished using colloidal silica having an average particle size of 0.06 ⁇ m, and part of the surface of the sprayed coating after polishing was masked with a polyimide tape.
- carbon tetrafluoride (CF 4 ), argon and oxygen were mixed at a volume ratio of 95: 950: 10 in a chamber of a parallel plate plasma etching apparatus maintained at a pressure of 133.3 Pa (1000 mTorr).
- Each sprayed coating was plasma etched under the condition that a high frequency power of 1300 W at 13.56 MHz was applied over 20 hours while supplying an etching gas at a flow rate of 1.055 L / min (1055 sccm).
- the step measuring device “Alpha Step” manufactured by KLA-Tencor the size of the step between the masked part and the unmasked part is measured, and the measured step size is divided by the etching time.
- the etching rate was calculated.
- “plasma erosion resistance” column “good” indicates that the ratio of the etching rate to the etching rate in Comparative Example 1 was less than 1.5, and “bad” indicates that it was 1.5 or more. It shows that.
- Each of the thermal spraying powders of Examples 1 to 5 and Comparative Examples 1 to 3 is subjected to atmospheric pressure plasma spraying under the thermal spraying conditions shown in Table 2, and the thickness is 200 ⁇ m on the surface of the focus ring used by being installed around the silicon wafer. A sprayed coating was formed. The result of evaluating the number of particles generated by plasma erosion from the sprayed coating obtained on each focus ring and deposited on the silicon wafer is shown in the “number of particles” column of Table 1. Specifically, first, the surface of the sprayed coating on each focus ring was polished with polishing paper until the surface roughness Ra became 0.5 ⁇ m or less.
- each focus ring was set in a chamber of a parallel plate plasma etching apparatus together with a silicon wafer, and carbon tetrafluoride, argon and oxygen were kept at 95: 950: 10 while maintaining the pressure in the chamber at 133.3 Pa.
- Each silicon wafer was plasma-etched under the condition that an etching gas mixed at a volume ratio was supplied into the chamber at a flow rate of 1.055 L / min and a high-frequency power of 1300 W was applied at 13.56 MHz for 20 hours. Thereafter, the number of particles generated by plasma erosion from the sprayed coating on each focus ring and deposited on the silicon wafer was measured.
- the contamination of the same silicon wafer was evaluated.
- the results are shown in the “contamination” column of Table 1.
- the cleaning solution after cleaning the plasma-etched silicon wafer was quantitatively analyzed using an Agilent 7700 ICP-MS apparatus manufactured by Agilent Technologies.
- “good” indicates that the ratio of the detected concentration of each element to the detected concentration of yttrium (Y) in Comparative Example 1 was less than 1.0, and “bad” indicates that 1 .0 or more.
- the “Risk” column in Table 1 shows the raw material supply risk of each thermal spraying powder, that is, the raw material acquisition risk.
- the ratio of the rare earth element oxide contained in the thermal spraying powder was 95 mol% or less, it was evaluated as “good”, and when it was higher than 95 mol%, it was evaluated as “bad”.
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Abstract
本発明の溶射用粉末は、希土類元素と周期表の第２族元素とを含んでいる。希土類元素と第２族元素とを含んだ溶射用粉末は、例えば、希土類元素化合物と第２族元素化合物との混合物、あるいは希土類元素と第２族元素とを含有した化合物又は固溶体から形成することができる。溶射用粉末は、希土類元素及び第２族元素以外でかつ酸素以外の元素である希釈元素、例えば、チタン、ジルコニウム、ハフニウム、バナジウム、ニオブ、タンタル、亜鉛、ホウ素、アルミニウム、ガリウム、ケイ素、モリブデン、タングステン、マンガン、ゲルマニウム及びリンから選ばれる一以上の元素をさらに含んでもよい。
Description
本発明は、希土類元素を含んだ溶射用粉末に関する。本発明はまた、希土類元素を含んだ皮膜、及びそのような皮膜を備えた部材に関する。
半導体デバイス製造分野において、ドライエッチングの一種であるプラズマエッチングによりシリコンウエハなどの半導体基板の微細加工が行われることがある。このエッチングプロセスの際、反応性プラズマに曝される半導体デバイス製造装置中の部材がエロージョン（損傷）を受けてパーティクルを発生するおそれがある。発生したパーティクルが半導体基板上に堆積すると、設計どおりの微細加工の実施が困難になったり、パーティクル中に含まれる元素によって半導体基板が汚染されたりする。そこで、エッチングプロセスの際に反応性プラズマに曝される部材に希土類元素を含んだ溶射皮膜を設け、それにより当該部材をプラズマエロージョンから保護することが従来行われている（例えば、特許文献１参照）。
しかしながら、希土類元素を含んだ溶射皮膜であってもパーティクルの発生を完全に抑えることはできない。パーティクルによる弊害をできるだけ小さくするためには、半導体基板上に堆積するパーティクルの数を少なくすることがまず重要であり、溶射皮膜がプラズマエロージョンを受けたときに発生するパーティクルのサイズを小さくすることがそれには効果的である。なぜなら、サイズの小さなパーティクルは、エッチングプロセス中に浮遊しながら反応性プラズマによるエロージョンを受けて最終的にガス化することにより消失したり、あるいは半導体デバイス製造装置内の気流に乗って外部に排出されたりしやすく、半導体基板上に堆積しないで済むことがあるからである。
また、発生するパーティクルのサイズを小さくすることに加えて、パーティクル中に含まれる元素が主な原因で起こる半導体基板の汚染を低減することも望まれている（例えば、特許文献２参照）。この汚染の度合いは、エッチングプロセス後の半導体基板を洗浄した後の洗浄液を回収して化学分析することにより評価することが可能である。希土類元素を主成分として含んだ溶射皮膜を設けた部材を半導体デバイス製造装置に使用した場合、溶射皮膜から生じるパーティクル中に希土類元素が多く含まれることになるため、半導体基板上に堆積したパーティクル中の希土類元素の含有量が許容レベルを超える、いわゆるスペックアウトが発生するおそれがある。
そこで本発明の目的は、プラズマエロージョンを受けたときにサイズの大きなパーティクルを発生しにくい溶射皮膜の形成に適した溶射用粉末を提供することにある。また本発明の別の目的は、プラズマエロージョンを受けたときにサイズの大きなパーティクルを発生しにくい皮膜、及びそのような皮膜を表面に備えた部材を提供することにある。
上記の目的を達成するために、本発明の第１の態様では、希土類元素と周期表の第２族元素とを含んだ溶射用粉末を提供する。希土類元素及び第２族元素は例えば酸化物の形態で溶射用粉末中に含まれている。溶射用粉末は、希土類元素及び第２族元素以外でかつ酸素以外の元素である希釈元素を例えば酸化物の形態でさらに含んでもよい。希釈元素は、例えば、チタン、ジルコニウム、ハフニウム、バナジウム、ニオブ、タンタル、亜鉛、ホウ素、アルミニウム、ガリウム、ケイ素、モリブデン、タングステン、マンガン、ゲルマニウム及びリンから選ばれる一以上の元素であってもよい。あるいは、希釈元素は、ジルコニウムと、希土類元素及び第２族元素以外でかつ酸素及びジルコニウム以外の一以上の元素との組み合わせであってもよい。
本発明の第２の態様では、第１の態様の溶射用粉末を溶射して得られる皮膜を提供する。
本発明の第３の態様では、希土類元素と周期表の第２族元素とを含んだ皮膜を提供する。
本発明の第４の態様では、第２の態様又は第３の態様の皮膜を表面に備えた部材を提供する。
本発明によれば、プラズマエロージョンを受けたときにサイズの大きなパーティクルを発生しにくい溶射皮膜の形成に適した溶射用粉末を提供することができる。また本発明によれば、プラズマエロージョンを受けたときにサイズの大きなパーティクルを発生しにくい皮膜、及びそのような皮膜を表面に備えた部材を提供することもできる。
以下、本発明の一実施形態を説明する。なお、本発明は以下の実施形態に限定されるものではなく、本発明の趣旨を損なわない範囲で適宜変更が可能である。
本実施形態の溶射用粉末は、希土類元素と、周期表の第２族に属する元素である第２族元素とを含んでいる。
希土類元素とは、具体的には、スカンジウム（元素記号Ｓｃ）、イットリウム（元素記号Ｙ）、ランタン（元素記号Ｌａ）、セリウム（元素記号Ｃｅ）、プラセオジウム（元素記号Ｐｒ）、ネオジム（元素記号Ｎｄ）、プロメチウム（元素記号Ｐｍ）、サマリウム（元素記号Ｓｍ）、ユウロピウム（元素記号Ｅｕ）、ガドリニウム（元素記号Ｇｄ）、テルビウム（元素記号Ｔｂ）、ジスプロシウム（元素記号Ｄｙ）、ホルミウム（元素記号Ｈｏ）、エルビウム（元素記号Ｅｒ）、ツリウム（元素記号Ｔｍ）、イッテルビウム（元素記号Ｙｂ）及びルテチウム（元素記号Ｌｕ）である。その中でも、地殻中に比較的多く存在するＳｃ、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｇｄ、Ｄｙ、Ｅｒ及びＹｂ、特にＳｃ、Ｙ、Ｌａ、Ｃｅ及びＮｄが好適である。
第２族元素とは、具体的には、ベリリウム（元素記号Ｂｅ）、マグネシウム（元素記号Ｍｇ）、カルシウム（元素記号Ｃａ）、ストロンチウム（元素記号Ｓｒ）、バリウム（元素記号Ｂａ）及びラジウム（元素記号Ｒａ）である。その中でも、地殻中に比較的多く存在するＭｇ、Ｃａ、Ｓｒ及びＢａ、特にＭｇ、Ｃａ及びＳｒが好適である。
溶射用粉末中の希土類元素の含有量は、酸化物換算で２０ｍｏｌ％以上であることが好ましく、より好ましくは２５ｍｏｌ％以上、さらに好ましくは３０ｍｏｌ％以上、特に好ましくは３５ｍｏｌ％以上である。希土類元素酸化物などの希土類元素の化合物は化学的安定性が高く、耐プラズマエロージョン性に優れている。そのため、溶射用粉末中の希土類元素の含有量が高くなるにつれて、溶射用粉末を溶射して得られる皮膜の耐プラズマエロージョン性は向上する傾向がある。
溶射用粉末中の希土類元素の含有量はまた、酸化物換算で９０ｍｏｌ％以下であることが好ましく、より好ましくは８０ｍｏｌ％以下、さらに好ましくは７０ｍｏｌ％以下、特に好ましくは６０ｍｏｌ％以下である。希土類元素は高価であり、また産出地が偏在していることにより供給が不安定な面も希土類元素にはある。この点、溶射用粉末中の希土類元素の含有量が低くなるにつれて、溶射用粉末の原料供給リスクが減少するという有利がある。
溶射用粉末中の第２族元素の含有量は、酸化物換算で３ｍｏｌ％以上であることが好ましく、より好ましくは３．５ｍｏｌ％以上、さらに好ましくは４ｍｏｌ％以上、特に好ましくは４．５ｍｏｌ％以上である。溶射用粉末中の第２族元素の含有量が高くなるにつれて、溶射用粉末を溶射して得られる皮膜がプラズマエロージョンを受けたときに発生するパーティクルのサイズは小さくなる。その理由は、希土類元素の化合物に比べて第２族元素の化合物の耐プラズマエロージョン性が低いことから、第２族元素の添加によって皮膜中にプラズマによる攻撃を受けやすい弱点が分散して存在することになるためと考えられる。これに対し、皮膜中に弱点が分散していない場合には、皮膜中の数少ない弱点にプラズマによる攻撃が集中し、その結果としてサイズの大きなパーティクルが発生する可能性がある。
溶射用粉末中の第２族元素の含有量はまた、酸化物換算で２０ｍｏｌ％以下であることが好ましく、より好ましくは１５ｍｏｌ％以下、さらに好ましくは１２ｍｏｌ％以下、特に好ましくは１０ｍｏｌ％以下である。先にも述べたとおり、第２族元素の化合物は耐プラズマエロージョン性が比較的低い。そのため、溶射用粉末中の第２族元素の含有量が低くなるにつれて、溶射用粉末を溶射して得られる皮膜の耐プラズマエロージョン性は向上する傾向がある。
溶射用粉末は、溶射用粉末中及び溶射用粉末を溶射して得られる皮膜中の希土類元素及び第２族元素の含有量の比率を下げる目的で溶射用粉末中に加えられる希釈元素として、希土類元素及び第２族元素以外でかつ酸素以外の元素をさらに含んでもよい。希釈元素の具体例としては、例えば、チタン（元素記号Ｔｉ）、ジルコニウム（元素記号Ｚｒ）、ハフニウム（元素記号Ｈｆ）、バナジウム（元素記号Ｖ）、ニオブ（元素記号Ｎｂ）、タンタル（元素記号Ｔａ）、亜鉛（元素記号Ｚｎ）、ホウ素（元素記号Ｂ）、アルミニウム（元素記号Ａｌ）、ガリウム（元素記号Ｇａ）、ケイ素（元素記号Ｓｉ）、モリブデン（元素記号Ｍｏ）、タングステン（元素記号Ｗ）、マンガン（元素記号Ｍｎ）、ゲルマニウム（元素記号Ｇｅ）及びリン（元素記号Ｐ）が挙げられるが、希土類元素及び第２族元素以外でかつ酸素以外の元素であれば特に限定されない。ただし、ジルコニウムを希釈元素として用いた場合には、他の希釈元素を用いた場合と比べて、溶射用粉末を溶射して得られる皮膜の耐プラズマエロージョン性が向上するという有利がある。
溶射用粉末中の希釈元素の含有量は、酸化物換算で１０ｍｏｌ％以上であることが好ましく、より好ましくは２０ｍｏｌ％以上、さらに好ましくは３０ｍｏｌ％以上、特に好ましくは４０ｍｏｌ％以上である。溶射用粉末中の希釈元素の含有量が高くなるにつれて、希土類元素の使用量を抑えることにより、溶射用粉末の原料供給リスク及び原料コストを減少することができる。また、溶射用粉末を溶射して得られる溶射皮膜がプラズマエロージョンを受けたときに発生するパーティクル中に含まれる希土類元素及び第２族元素の量が相対的に少なくなることにより、パーティクル中の希土類元素及び第２族元素による汚染がシリコンウエハなどの半導体基板に起こるおそれも減る。
溶射用粉末中の希釈元素の含有量はまた、酸化物換算で６０ｍｏｌ％以下であることが好ましく、より好ましくは５７ｍｏｌ％以下、さらに好ましくは５５ｍｏｌ％以下、特に好ましくは４８ｍｏｌ％以下である。希釈元素の化合物の耐プラズマエロージョン性は、希土類元素の化合物の耐プラズマエロージョン性と比べて一般に低い。そのため、溶射用粉末中の希釈元素の含有量が低くなるにつれて、溶射用粉末を溶射して得られる皮膜の耐プラズマエロージョン性は向上する傾向がある。
溶射用粉末は、例えば、希土類元素の化合物と第２族元素の化合物との混合物、あるいは希土類元素と第２族元素とを含有した化合物又は固溶体から形成される。希土類元素の化合物の典型例は、希土類元素酸化物である。第２族元素の化合物の典型例は、第２族元素酸化物である。希土類元素と第２族元素とを含有した化合物又は固溶体の典型例は、希土類元素と第２族元素の複合酸化物である。溶射用粉末が希釈元素を含む場合であれば、溶射用粉末は、例えば、希土類元素の化合物と第２族元素の化合物と希釈元素の化合物との混合物、あるいは希土類元素と第２族元素と希釈元素とを含有した化合物又は固溶体から形成される。
溶射用粉末は、例えば、希土類元素酸化物などの希土類元素の化合物からなる粉末に第２族元素酸化物などの第２族元素の化合物からなる粉末を混合し、必要であれば希釈元素の化合物（例えば酸化物）をさらに混合することにより製造される。使用される希土類元素化合物の粉末は、レーザー散乱・回折式の粒度分布測定器で測定される粒子径で１０μｍ以下、さらに言えば６μｍ以下、３μｍ以下又は１μｍ以下の粒子が粉末中の体積比で９０％以上を占めることが好ましい。希土類元素化合物の粉末として粒度が細かいものを使用することにより、溶射用粉末を溶射して得られる皮膜がプラズマエロージョンを受けたときに発生するパーティクルのサイズを小さくすることができる。その理由は、皮膜中の希土類元素化合物部分及び第２族元素化合物部分のうち希土類元素化合物部分のサイズが小さくなるためと考えられる。
あるいは、希土類元素の化合物又は単体の粉末と第２族元素の化合物又は単体の粉末とを含み、必要であれば希釈元素の化合物又は単体もさらに含んだ原料粉末を造粒して焼結することにより溶射用粉末を製造してもよい。この場合、希土類元素、第２族元素及び希釈元素がそれぞれ酸化物以外の形態、例えば単体や水酸化物、塩の形態で原料粉末中に存在する場合であっても、焼結の過程でそれらを酸化物に変換することが可能である。
原料粉末の造粒及び焼結により得られる造粒－焼結粒子からなる溶射用粉末の製造に際し、原料粉末の造粒は、適当な分散媒に原料粉末を混合し、必要に応じてバインダを添加してなるスラリーを噴霧造粒することによって行ってもよいし、転動造粒又は圧縮造粒により原料粉末から直接行ってもよい。造粒後の原料粉末の焼結は、大気中、酸素雰囲気中、真空中及び不活性ガス雰囲気中のいずれで行ってもよい。ただし、酸化物以外の形態で存在する原料粉末中の元素を酸化物に変換するためには、大気中又は酸素雰囲気中で行うことが好ましい。焼結温度は特に限定されないが、好ましくは１０００～１７００℃、より好ましくは１１００～１７００℃、さらに好ましくは１２００～１７００℃である。焼結時における最高温度保持時間も特に限定されないが、好ましくは１０分～２４時間、より好ましくは３０分～２４時間、さらに好ましくは１～２４時間である。
本実施形態の溶射用粉末は、プラズマ溶射法、高速フレーム溶射法、フレーム溶射法、爆発溶射法、エアロゾルデポジション法などの溶射法により半導体デバイス製造装置中の部材又はその他の部材の表面に皮膜を形成する用途で使用される。溶射用粉末を溶射して得られる皮膜には、少なくとも希土類元素と第２族元素とが酸化物などの化合物の形態で含まれることになる。
溶射皮膜中の希土類元素化合物部分は、電界放出型走査電子顕微鏡による反射電子像で観察されるサイズが２０μｍ２以下であることが好ましく、より好ましくは２μｍ２以下、さらに好ましくは０．２μｍ２以下、特に好ましくは０．０２μｍ２以下である。希土類元素化合物部分のサイズが小さくなるにつれて、プラズマエロージョンを受けたときに溶射皮膜から発生するパーティクルのサイズを小さくすることができる。
溶射皮膜の厚さは特に限定されず、例えば３０～１０００μｍであってもよい。ただし、好ましくは５０～５００μｍ、より好ましくは８０～３００μｍである。
本実施形態によれば以下の作用及び効果が得られる。
・ 本実施形態の溶射用粉末は、希土類元素と第２族元素とを含んでいる。そのため、この溶射用粉末を溶射して得られる希土類元素と第２族元素とを含んだ皮膜は、希土類元素による効果として高い耐プラズマエロージョン性を有する一方で、第２族元素による効果としてサイズの大きなパーティクルを発生しにくい性質を有している。つまり、本実施形態によれば、プラズマエロージョンを受けたときにサイズの大きなパーティクルを発生しにくい溶射皮膜の形成に適した溶射用粉末を提供することができる。また、プラズマエロージョンを受けたときにサイズの大きなパーティクルを発生しにくい皮膜、及びそのような皮膜を表面に備えた部材を提供することもできる。
・ 本実施形態の溶射用粉末は、希土類元素に加えて第２族元素を含み、場合によっては希土類元素及び第２族元素以外でかつ酸素以外の希釈元素をさらに含んでいる。そのため、高価でかつ供給に不安定な面のある希土類元素の使用量を抑えることができ、溶射用粉末の原料供給リスクを減少することができる。また、溶射用粉末を溶射して得られる溶射皮膜がプラズマエロージョンを受けたときに発生するパーティクル中に含まれる希土類元素の量が相対的に少なくなることにより、パーティクル中の希土類元素による汚染がシリコンウエハなどの半導体基板に起こるおそれも小さい。
前記実施形態は次のように変更されてもよい。
・ 前記実施形態の溶射用粉末は、２種類以上、好ましくは３種類以上の希土類元素を含んでもよい。すなわち、Ｓｃ、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ及びＬｕから選ばれる二以上、好ましくは三以上の元素を含んでもよい。この場合、溶射用粉末を溶射して得られる皮膜がプラズマエロージョンを受けたときに発生するパーティクル中の希土類元素の含有量が希土類元素の種類ごとに分散されることになるため、半導体基板上に堆積したパーティクル中の各希土類元素の含有量が許容レベルを超えてしまうおそれを少なくすることができる。溶射用粉末中の各希土類元素の含有量は、酸化物換算で３ｍｏｌ％以上であることが好ましく、より好ましくは５ｍｏｌ％以上、さらに好ましくは１０ｍｏｌ％以上である。溶射用粉末中の各希土類元素の含有量はまた、酸化物換算で５０ｍｏｌ％以下であることが好ましく、より好ましくは４０ｍｏｌ％以下、さらに好ましくは３０ｍｏｌ％以下、特に好ましくは２５ｍｏｌ％以下である。
・ 前記実施形態の溶射用粉末は、２種類以上、好ましくは３種類以上の第２族元素を含んでもよい。すなわち、Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａ及びＲａから選ばれる二以上、好ましくは三以上の元素を含んでもよい。この場合、溶射用粉末を溶射して得られる皮膜がプラズマエロージョンを受けたときに発生するパーティクル中の第２族元素の含有量が第２族元素の種類ごとに分散されることになるため、半導体基板上に堆積したパーティクル中の各第２族元素の含有量が許容レベルを超えてしまうおそれを少なくすることができる。溶射用粉末中の各第２族元素の含有量は、酸化物換算で１ｍｏｌ％以上であることが好ましく、より好ましくは１．５ｍｏｌ％以上、さらに好ましくは２ｍｏｌ％以上、特に好ましくは２．５ｍｏｌ％以上である。溶射用粉末中の各第２族元素の含有量はまた、酸化物換算で１５ｍｏｌ％以下であることが好ましく、より好ましくは１２ｍｏｌ％以下、さらに好ましくは１０ｍｏｌ％以下、特に好ましくは８ｍｏｌ％以下である。
・ 前記実施形態の溶射用粉末は、２種類以上、好ましくは３種類以上の希釈元素を含んでもよい。例えば、Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｚｎ、Ｂ、Ａｌ、Ｇａ、Ｓｉ、Ｍｏ、Ｗ、Ｍｎ、Ｇｅ及びＰから選ばれる二以上、好ましくは三以上の元素を含んでもよい。この場合、溶射用粉末を溶射して得られる皮膜がプラズマエロージョンを受けたときに発生するパーティクル中の希釈元素の含有量が希釈元素の種類ごとに分散されることになるため、半導体基板上に堆積したパーティクル中の各希釈元素の含有量が許容レベルを超えてしまうおそれを少なくすることができる。溶射用粉末中の各希釈元素の含有量は、酸化物換算で５ｍｏｌ％以上であることが好ましく、より好ましくは１０ｍｏｌ％以上、さらに好ましくは１５ｍｏｌ％以上、特に好ましくは２０ｍｏｌ％以上である。溶射用粉末中の各希釈元素の含有量はまた、酸化物換算で４０ｍｏｌ％以下であることが好ましく、より好ましくは３０ｍｏｌ％以下、さらに好ましくは２０ｍｏｌ％以下、特に好ましく１５ｍｏｌ％以下である。中でも、Ｚｒ（ジルコニウム）とそれ以外の希釈元素とを組み合わせて用いることは、溶射用粉末を溶射して得られる皮膜の耐プラズマエロージョン性がジルコニウムの添加によって向上する点で好ましい。
・ 希土類元素と第２族元素とを含んだ皮膜は、前記実施形態のような溶射用粉末を溶射することにより形成されるに限らず、例えば化学気相成長法（ＣＶＤ）や物理気相成長法（ＰＶＤ）のような溶射以外の手法で形成されてもよい。溶射以外の手法で形成される希土類元素と第２族元素とを含んだ皮膜の厚さは、例えば０．１～１００μｍであってもよく、好ましくは０．５～５０μｍ、より好ましくは１～３０μｍである。
次に、実施例及び比較例を挙げて本発明をさらに具体的に説明する。
希土類元素を含んだ実施例１～５及び比較例１，２の溶射用粉末並びに希土類元素を含まない比較例３の溶射用粉末を用意した。実施例１～５の溶射用粉末は、希土類元素の酸化物の粉末と、第２族元素の酸化物の粉末と、希土類元素及び第２族元素以外でかつ酸素以外の希釈元素の酸化物の粉末とを混合し、造粒及び焼結することにより製造した。比較例１の溶射用粉末は、希土類元素の酸化物の粉末を造粒及び焼結することにより製造した。比較例２の溶射用粉末は、希土類元素の酸化物の粉末と、希土類元素及び第２族元素以外でかつ酸素以外の希釈元素の酸化物の粉末とを混合し、造粒及び焼結することにより製造した。比較例３の溶射用粉末は、第２族元素の酸化物の粉末と、希土類元素及び第２族元素以外でかつ酸素以外の希釈元素の酸化物の粉末とを混合し、造粒及び焼結することにより製造した。各溶射用粉末の詳細は表１に示すとおりである。
表１の“希土類元素の種類”欄には、各溶射用粉末中に含まれる希土類元素の種類を示す。表１の“希土類元素酸化物の比率”欄には、各溶射用粉末中の希土類元素酸化物のモル比率を希土類元素の種類ごとに示す。
表１の“第２族元素の種類”欄には、各溶射用粉末中に含まれる第２族元素の種類を示す。表１の“第２族元素酸化物の比率”欄には、各溶射用粉末中の第２族元素酸化物のモル比率を第２族元素の種類ごとに示す。
表１の“希釈元素の種類”欄には、各溶射用粉末中に含まれる希釈元素の種類を示す。表１の“希釈元素酸化物の比率”欄には、各溶射用粉末中の希釈元素酸化物のモル比率を希釈元素の種類ごとに示す。
表１の“皮膜中の希土類元素化合物部分のサイズ”欄には、各溶射用粉末を表２に示す溶射条件で大気圧プラズマ溶射して得られる溶射皮膜中の希土類元素化合物部分のサイズを示す。このサイズの測定は、電界放出型走査電子顕微鏡による反射電子像で溶射皮膜を観察して行った。
実施例１～５及び比較例１～３の各溶射用粉末を表２に示す溶射条件で大気圧プラズマ溶射して、褐色アルミナ研削材（Ａ＃４０）によるブラスト処理済みの２０ｍｍ×２０ｍｍ×２ｍｍの寸法のＡｌ合金(Ａ６０６１)板の表面に厚さ２００μｍの溶射皮膜を形成した。得られた溶射皮膜の耐プラズマエロージョン性を評価した結果を表１の“耐プラズマエロージョン性”欄に示す。具体的にはまず、平均粒子径０．０６μｍのコロイダルシリカを用いて各溶射皮膜の表面を鏡面研磨し、研磨後の溶射皮膜の表面の一部をポリイミドテープでマスキングした。続いて、１３３．３Ｐａ（１０００ｍＴｏｒｒ）の圧力に保たれた平行平板型プラズマエッチング装置のチャンバー内で、四フッ化炭素（ＣＦ４）とアルゴンと酸素を９５：９５０：１０の体積比で混合したエッチングガスを１．０５５Ｌ／分（１０５５ｓｃｃｍ）の流量で供給しながら、１３．５６ＭＨｚで１３００Ｗの高周波電力を２０時間にわたり印加するという条件で各溶射皮膜をプラズマエッチングした。その後、ケーエルエー・テンコール社の段差測定装置“アルファステップ”を用いて、マスキングした部分とマスキングしなかった部分の間の段差の大きさを測定し、測定された段差の大きさをエッチング時間で除することでエッチング速度を算出した。“耐プラズマエロージョン性”欄中、“良”は比較例１の場合のエッチング速度に対するエッチング速度の比が１．５未満であったことを示し、“不良”はそれが１．５以上であったことを示す。
実施例１～５及び比較例１～３の各溶射用粉末を表２に示す溶射条件で大気圧プラズマ溶射して、シリコンウエハの周囲に設置して使用されるフォーカスリングの表面に厚さ２００μｍの溶射皮膜を形成した。各フォーカスリング上に得られた溶射皮膜からプラズマエロージョンにより発生してシリコンウエハ上に堆積するパーティクルの数について評価した結果を表１の“パーティクル数”欄に示す。具体的には、まず、各フォーカスリング上の溶射皮膜の表面を表面粗さＲａが０．５μｍ以下になるまで研磨紙を用いて研磨した。続いて、各フォーカスリングをシリコンウエハとともに平行平板型プラズマエッチング装置のチャンバー内にセットし、チャンバー内の圧力を１３３．３Ｐａに保ちつつ、四フッ化炭素とアルゴンと酸素を９５：９５０：１０の体積比で混合したエッチングガスを１．０５５Ｌ／分の流量でチャンバー内に供給し、その状態で１３．５６ＭＨｚで１３００Ｗの高周波電力を２０時間にわたり印加するという条件で各シリコンウエハをプラズマエッチングした。その後、各フォーカスリング上の溶射皮膜からプラズマエロージョンにより発生してシリコンウエハ上に堆積したパーティクルの数を測定した。“パーティクル数”欄中、“良”は、プラズマエッチングの前後にケーエルエー・テンコール社のパーティクルカウンターＳｕｒｆｓｃａｎＳＰ３を用いてカウントされるシリコンウエハ上のパーティクル数の差を、フォーカスリング上の溶射皮膜から発生してシリコンウエハ上に堆積したパーティクル数であると見なしたときに、比較例１の場合のパーティクル数に対するパーティクル数の比が１．０未満であったことを示し、“不良”はそれが１．０以上であったことを示す。
上記のようにしてプラズマエロージョンにより発生してシリコンウエハ上に堆積するパーティクルの数についての評価をした後、同じシリコンウエハの汚染についての評価を行った。その結果を表１の“汚染”欄に示す。具体的には、プラズマエッチング後のシリコンウエハを洗浄した後の洗浄液をアジレント・テクノロジー社のＩＣＰ－ＭＳ装置であるＡｇｉｌｅｎｔ７７００を用いて定量分析した。“汚染”欄中、“良”は比較例１の場合のイットリウム（Ｙ）の検出濃度に対する各元素の検出濃度の比が１．０未満であったことを示し、“不良”はそれが１．０以上であったことを示す。
表１の“リスク”欄には、各溶射用粉末の原料供給リスク、すなわち原料の入手リスクを示す。溶射用粉末中に含まれる希土類元素酸化物の比率が９５ｍｏｌ％以下である場合には“良”、それが９５ｍｏｌ％よりも大きい場合には“不良”と評価した。
Claims (9)
- 希土類元素と周期表の第２族元素とを含んだ溶射用粉末。
- 前記希土類元素及び前記第２族元素を酸化物の形態で含む、請求項１に記載の溶射用粉末。
- 希土類元素及び第２族元素以外でかつ酸素以外の元素である希釈元素をさらに含む、請求項１又は２に記載の溶射用粉末。
- 前記希釈元素は、チタン、ジルコニウム、ハフニウム、バナジウム、ニオブ、タンタル、亜鉛、ホウ素、アルミニウム、ガリウム、ケイ素、モリブデン、タングステン、マンガン、ゲルマニウム及びリンから選ばれる一以上の元素である、請求項３に記載の溶射用粉末。
- 前記希釈元素は、ジルコニウムと、希土類元素及び第２族元素以外でかつ酸素及びジルコニウム以外の一以上の元素との組み合わせである、請求項３又は４に記載の溶射用粉末。
- 前記希釈元素を酸化物の形態で含む、請求項４に記載の溶射用粉末。
- 請求項１～６のいずれか一項に記載の溶射用粉末を溶射して得られる皮膜。
- 希土類元素と周期表の第２族元素とを含んだ皮膜。
- 請求項７又は８に記載の皮膜を表面に備えた部材。
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| CN201280046473.4A CN103890219A (zh) | 2011-09-26 | 2012-09-26 | 包含稀土元素的喷镀用粉末和覆膜、以及具备前述覆膜的构件 |
| KR1020147010431A KR20140072110A (ko) | 2011-09-26 | 2012-09-26 | 희토류 원소를 포함한 용사용 분말 및 피막 및 상기 피막을 구비한 부재 |
| US14/346,553 US9670099B2 (en) | 2011-09-26 | 2012-09-26 | Thermal spray powder and film that contain rare-earth element, and member provided with film |
| KR1020187029878A KR20180117713A (ko) | 2011-09-26 | 2012-09-26 | 희토류 원소를 포함한 용사용 분말 및 피막 및 상기 피막을 구비한 부재 |
| JP2013536331A JP6261980B2 (ja) | 2011-09-26 | 2012-09-26 | 皮膜の形成方法 |
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| US20170301522A1 (en) * | 2013-07-19 | 2017-10-19 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based thin film coatings on process rings |
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| WO2013047588A1 (ja) * | 2011-09-26 | 2013-04-04 | 株式会社 フジミインコーポレーテッド | 希土類元素を含んだ溶射用粉末及び皮膜、並びに前記皮膜を備えた部材 |
| US9583369B2 (en) | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
| US9725799B2 (en) | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
| JP5671648B1 (ja) * | 2014-08-08 | 2015-02-18 | 黒崎播磨株式会社 | 溶射材 |
| WO2018159713A1 (ja) * | 2017-03-01 | 2018-09-07 | 信越化学工業株式会社 | 溶射皮膜、溶射用粉、溶射用粉の製造方法、及び溶射皮膜の製造方法 |
| CN111386358A (zh) | 2017-11-29 | 2020-07-07 | 杰富意钢铁株式会社 | 高强度镀锌钢板及其制造方法 |
| MX2020005475A (es) | 2017-11-29 | 2020-08-27 | Jfe Steel Corp | Chapa de acero galvanizada de alta resistencia y metodo para fabricar la misma. |
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- 2012-09-26 JP JP2013536331A patent/JP6261980B2/ja active Active
- 2012-09-26 WO PCT/JP2012/074719 patent/WO2013047589A1/ja active Application Filing
- 2012-09-26 CN CN201280046473.4A patent/CN103890219A/zh active Pending
- 2012-09-26 TW TW101135293A patent/TWI625422B/zh active
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| Publication number | Publication date |
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| KR20140072110A (ko) | 2014-06-12 |
| JPWO2013047589A1 (ja) | 2015-03-26 |
| JP6261980B2 (ja) | 2018-01-17 |
| CN103890219A (zh) | 2014-06-25 |
| TWI625422B (zh) | 2018-06-01 |
| TW201329287A (zh) | 2013-07-16 |
| KR20180117713A (ko) | 2018-10-29 |
| US9670099B2 (en) | 2017-06-06 |
| US20140234653A1 (en) | 2014-08-21 |
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