WO2013045367A3 - Elektronische baugruppe mit hochtemperaturstabilem substratgrundwerkstoff, verfahren zu ihrer herstellung und ihre verwendung in einer leistungselektronik - Google Patents

Elektronische baugruppe mit hochtemperaturstabilem substratgrundwerkstoff, verfahren zu ihrer herstellung und ihre verwendung in einer leistungselektronik Download PDF

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Publication number
WO2013045367A3
WO2013045367A3 PCT/EP2012/068666 EP2012068666W WO2013045367A3 WO 2013045367 A3 WO2013045367 A3 WO 2013045367A3 EP 2012068666 W EP2012068666 W EP 2012068666W WO 2013045367 A3 WO2013045367 A3 WO 2013045367A3
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Prior art keywords
substrate
power component
electronic assembly
basic material
assembly
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PCT/EP2012/068666
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English (en)
French (fr)
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WO2013045367A2 (de
Inventor
Daniel Wolde-Giorgis
Bernd Hohenberger
Thomas Kalich
Original Assignee
Robert Bosch Gmbh
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Publication of WO2013045367A2 publication Critical patent/WO2013045367A2/de
Publication of WO2013045367A3 publication Critical patent/WO2013045367A3/de

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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

Die Erfindung betrifft eine elektronische Baugruppe (10) umfassend ein elektronisches Leistungsbauteil (11) und mindestens ein Substrat (12), - wobei das Substrat (12) Aluminium, Magnesium oder Mangan oder eine Aluminium-, Magnesium- oder Manganlegierung als Substratgrundwerkstoff umfasst, - wobei das Substrat (12) mit einer Oberflächenbeschichtung aus Ag, Au, Pd, Sn oder aus einer Ag-, Au-, Pd- oder Sn-Legierung oder mit einer Schichtabfolge (14a, 14b) mindestens zweier dieser Metalle oder Legierungen auf der dem Leistungsbauteil (11) zugewandten Seite zumindest teilweise versehen ist, und - wobei das Leistungsbauteil (11) mittels einer Silbersinterverbindungsschicht (20) an das Substrat (12) angebunden ist. Die Baugruppe (10) kann mindestens ein erstes und ein zweites Substrat (12, 12a) umfassen, wobei das Leistungsbauteil (11) auf zwei gegenüberliegenden Seiten jeweils mittels einer Sinterverbindungsschicht (20) an das erste Substrat (12) und an das zweite Substrat (12a) angebunden ist. Die Baugruppe kann auch ein erstes Leistungsbauteil und ein zweites Leistungsbauteil umfassen, wobei die Leistungsbauteile auf gegenüberliegenden Seiten des Substrats aufgebracht und jeweils mit einer Sinterverbindungsschicht an das Substrat angebunden sind. Die Erfindung betrifft weiterhin ein Verfahren zur Herstellung einer elektronischen Baugruppe (10) sowie die Verwendung einer erfindungsgemäßen elektronischen Baugruppe (10) in einer Leistungselektronik, z.B. als Teil einer Einpressdiode, beispielsweise an einem Generatorschild. Der Gegenstand der vorliegenden Erfindung kann vorteilhafterweise eine verbesserte Zuverlässigkeit bei Temperaturwechseln zeigen, insbesondere bei Baugruppen, in denen Fügeverbindungen bei hohen Einsatztemperaturen verwendet werden. Aufgrund der geringeren Materialkosten des Substratgrundwerkstoffs kann insgesamt die Herstellung von hochtemperaturstabilen Leistungsbauteilen kostengünstiger gestaltet werden.
PCT/EP2012/068666 2011-09-30 2012-09-21 Elektronische baugruppe mit hochtemperaturstabilem substratgrundwerkstoff WO2013045367A2 (de)

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DE102011083911A DE102011083911A1 (de) 2011-09-30 2011-09-30 Elektronische Baugruppe mit hochtemperaturstabilem Substratgrundwerkstoff

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DE102014104272A1 (de) 2014-03-26 2015-10-01 Heraeus Deutschland GmbH & Co. KG Träger und Clip jeweils für ein Halbleiterelement, Verfahren zur Herstellung, Verwendung und Sinterpaste
FR3123165B1 (fr) * 2021-05-18 2024-03-01 Tem Machine électrique tournante à aimants surfaciques

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3414065A1 (de) * 1984-04-13 1985-12-12 Siemens AG, 1000 Berlin und 8000 München Anordnung bestehend aus mindestens einem auf einem substrat befestigten elektronischen bauelement und verfahren zur herstellung einer derartigen anordnung
EP1684340A2 (de) * 2005-01-20 2006-07-26 Nissan Motor Co., Ltd. Verfahren zum Bonden einer Halbleitervorrichtung auf ein metallisches Substrat
WO2010072534A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Hochtemperaturbeständige lötmittelfreie bauelementstruktur und verfahren zum elektrischen kontaktieren
DE102009002100A1 (de) * 2009-04-01 2010-10-07 Robert Bosch Gmbh Elektrisches Bauelement
DE102010001666A1 (de) * 2010-02-08 2011-08-11 Robert Bosch GmbH, 70469 Elektrisches oder elektronisches Verbundbauteil

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004019567B3 (de) * 2004-04-22 2006-01-12 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat
DE102005047567B3 (de) * 2005-10-05 2007-03-29 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Isolationszwischenlage und Verfahren zu seiner Herstellung
DE102008009510B3 (de) 2008-02-15 2009-07-16 Danfoss Silicon Power Gmbh Verfahren zum Niedertemperatur-Drucksintern

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3414065A1 (de) * 1984-04-13 1985-12-12 Siemens AG, 1000 Berlin und 8000 München Anordnung bestehend aus mindestens einem auf einem substrat befestigten elektronischen bauelement und verfahren zur herstellung einer derartigen anordnung
EP1684340A2 (de) * 2005-01-20 2006-07-26 Nissan Motor Co., Ltd. Verfahren zum Bonden einer Halbleitervorrichtung auf ein metallisches Substrat
WO2010072534A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Hochtemperaturbeständige lötmittelfreie bauelementstruktur und verfahren zum elektrischen kontaktieren
DE102009002100A1 (de) * 2009-04-01 2010-10-07 Robert Bosch Gmbh Elektrisches Bauelement
DE102010001666A1 (de) * 2010-02-08 2011-08-11 Robert Bosch GmbH, 70469 Elektrisches oder elektronisches Verbundbauteil

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