WO2013045222A1 - Agencement de ressort de contact et son procédé de réalisation - Google Patents

Agencement de ressort de contact et son procédé de réalisation Download PDF

Info

Publication number
WO2013045222A1
WO2013045222A1 PCT/EP2012/067136 EP2012067136W WO2013045222A1 WO 2013045222 A1 WO2013045222 A1 WO 2013045222A1 EP 2012067136 W EP2012067136 W EP 2012067136W WO 2013045222 A1 WO2013045222 A1 WO 2013045222A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
contact
spring
spring element
film
Prior art date
Application number
PCT/EP2012/067136
Other languages
German (de)
English (en)
Inventor
Roland Irsigler
Michael Kaspar
Karl Weidner
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2013045222A1 publication Critical patent/WO2013045222A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
    • H01R12/714—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
    • H01R13/2414—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means conductive elastomers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2442—Contacts for co-operating by abutting resilient; resiliently-mounted with a single cantilevered beam
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/117—Pads along the edge of rigid circuit boards, e.g. for pluggable connectors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
    • H05K3/326—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/091—Locally and permanently deformed areas including dielectric material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10189—Non-printed connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/1031—Surface mounted metallic connector elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a contact spring assembly and to methods of making a contact spring assembly.
  • a contact spring arrangement with a spring contact is frequently used.
  • the contact spring assembly is inserted into a designated contact.
  • the Fe ⁇ dertitle is elastically deformed and there is a force-fit connection between the contact and ⁇ Federkon- clock.
  • the contact spring arrangement can be destructively removed from the contact.
  • the contact ⁇ lamellae are designed as torsion springs or leaf spring blades.
  • the contact blades are made of metal, often made of resilient metal. Due to the materials used, such lamellar bands are very expensive to manufacture. In addition, the contact blades often have only a low current carrying capacity.
  • the contact blades are fastened by means of a contact rail on the module or the circuit board. This assembly he ⁇ calls additional steps.
  • a Kunststofffe- deran angel with a substrate having at least one contact surface, a spring element, which is arranged ⁇ on the substrate and a line member which is arranged on the at least one contact surface and on the spring element.
  • any circuit carrier can be used on an organic and inorganic basis, such as printed circuit boards (PCB) or ceramic sub ⁇ strate (DCB, Direct Copper Bond), IM (Insulated Metal) -, HTCC (High Temperature Cofired Ceramics) and LTCC (Low Temperature Cofired Ceramics) substrates.
  • PCB printed circuit boards
  • DCB Direct Copper Bond
  • IM Insulated Metal
  • HTCC High Temperature Cofired Ceramics
  • LTCC Low Temperature Cofired Ceramics
  • the contact surface is formed on a surface of the substrate on an electrically conductive layer, e.g. on a copper layer.
  • the substrate comprises a plurality of contact surfaces, with which e.g. arranged on the substrate semiconductor devices may be electrically conductively connected.
  • the spring element has the ability to elastically deform under a mechanical load and to return to its original shape after removal of the mechanical load.
  • the spring element is particularly suitable for energy, which is introduced by compressive forces, temporarily save as Formän ⁇ tion energy and to return the stored energy after elimination of the pressure forces back to the environment.
  • the spring element consists of at least one elastic material, ie a material which returns after deformation by compression back into the original shape.
  • elastic materials are elastomers, and particularly with respect to their insulating properties modified polymers and Kau ⁇ tschuke.
  • silicone polymers such as be ertrieben under the name "Elastosil” from Wacker Chemie or polymer films such as TSA 15 are ver of Toray ⁇ applies some.
  • rubber-elastic material ⁇ lien ie materials with a wide mesh networked macromolecular chains.
  • elastic materials for example, materials with a modulus of elasticity E of 100,000 N / m 2 (1E5 Newton / square meter) to 500,000,000 N / m 2 (5E8 N / m 2 ) and in particular with a modulus of elasticity E of eg 1E6 N / m 2 to 1E7 N / m 2 be used.
  • the use of resilient materials makes it possible to achieve the functionality of the spring element already by the choice of material.
  • the spring member may be formed as elastic elevation above the sub ⁇ strat the spring element has.
  • ⁇ a height perpendicular ⁇ right to the substrate surface, a width in the longitudinal direction of the conduit element and a length transverse to the longitudinal direction of the conduit element e over the substrate from 10 microns (ym) to 2 millimeters (mm), and preferably has a height of 100 ym to 1 mm.
  • An elaborate geometric design of the spring element is not necessary.
  • the spring element consists of electrically insulating material.
  • the spring element can also be arranged over regions of the substrate in which conductive track structures are formed.
  • the spring element has an upper side which has an arcuate profile in cross-section, ie the height of the spring element steadily increases from the edge regions to the central region of the cross section.
  • the upper side of the spring element can be shaped convexly, at least in the middle region.
  • the top is here facing away from the sub ⁇ strate side of the spring element.
  • the arcuate profile provides for a spatially defined contact between contact spring assembly and contact in the installed state and for a progressive course of the spring force in Depending on the travel, ie with increasing spring travel, the spring force increases.
  • the spring element has a width which decreases stepwise with increasing distance from the substrate. As a result, a spring force largely constant spring force can be achieved.
  • the spring element literallyin- least a first material layer and above the first Ma ⁇ terial Anlagen disposed second material layer.
  • more than two, eg three or four layers of material can be used.
  • the material layers may be made of the same elastic material or different materials may be used.
  • only one of the material layers may consist of elastic material and the other material ⁇ layer may consist of a non-elastic material. As a result, an improved adjustability of the spring force can be achieved.
  • the spring contact assembly including a semiconductor chip or an electronic device on which is disposed on the substrate, and a film layer, in particular an electrically isolie ⁇ Rende film layer on to part regions of the semiconductor ⁇ chips or the electrical component and Subregions of the substrate is arranged.
  • the first material layer or the second material layer of the spring element is in this case formed from the film layer.
  • the film layer may be made of arbitrary ⁇ thermoplastics, thermosets, and mixtures thereof.
  • a film layer is made of a synthetic material ⁇ on polyimide (PI), polyethylene (PE) -, polyphenylene nol-, polyether ether ketone (PEEK) - and / or applies comparable epoxy.
  • the film may have an adhesive layer to improve adhesion to the surface.
  • the film may have a thickness of 10 ym to 500 ym, preferably the thickness of the film is 25 ym to 150 ym.
  • the above-mentioned line element is the element of the contact spring arrangement, which produces an electrically conductive connection to the contact surfaces of the substrate and - in the installed state - the electrical contact with the contact.
  • the line element is formed from an electrically conductive material, for example a metal. All galvanically depositable metals can be used as materials. For example, copper, copper alloys, aluminum, aluminum alloys, nickel, nickel alloys, silver, silver alloys, titanium, gold, tin or layers of several of these materials may be used, such as a layer sequence of titanium / copper / nickel / Gold.
  • the line element extends in its longitudinal direction from the contact surface ⁇ over the spring element.
  • the line element is formed from at least one bonding wire.
  • the line element may also be formed of a plurality, that is, two or more bonding wires.
  • the diameter of the bonding wire can be selected.
  • bond wires can be used with a diameter of 200 ym to 300 ym, alterna tively ⁇ but also the bonding wires can be used with larger or smaller diameter.
  • the conduit element is formed from at least one flat band.
  • the line element may be formed of two or more flat strips.
  • the ribbon has a thickness transverse to the substrate surface and a width transverse to its longitudinal direction.
  • the flat strip may for example have a thickness transverse to the substrate surface of 100 ym to 300 ym, al ⁇ ternatively, however, depending on the technical requirements, other strip thicknesses can be used.
  • NEN copper or aluminum flat strips are used.
  • the width of the flat belt can be selected according to the technical requirements.
  • the conduit element comprises a galvanically deposited metal.
  • the electrodeposited kill ⁇ different material may have a thickness of 30 ym to 400 ym have ⁇ , preferably, the electrodeposited mate rial ⁇ a thickness of 50 ym to 200 ym have. However, other thicknesses may be used depending on the technical requirements.
  • a particularly cost-effective contact spring arrangement can be ⁇ beitereit.
  • the line element lies flat on the spring element, ie over the spring element, the underside of the line element is not only punctiform but completely on the spring element. In this way, a particularly good support effect by the spring element he be ⁇ aims.
  • the contact spring arrangement has only one spring element and one line element. This is a particularly easy herzustel ⁇ loin arrangement with low space requirement.
  • the object of the invention is achieved by the measures of claim 8.
  • the object of the invention is achieved by a method in which a substrate having at least one Maisflä ⁇ surface is provided, a spring member is formed on the substrate and a line element is formed so that after forming the spring member and the line ⁇ elements the Conduction element on the at least one contact ⁇ surface and is arranged above the spring element.
  • the system of the spring contact is separated with regard to its function ⁇ tionality in separate functional units, namely a spring member which provides the required spring force and effect, and a lead member which is electrically conduc- capable, thus allowing the electrical contact.
  • the two separate functional units can be realized separately with simple and known methods. As a result, a particularly cost-effective production is possible.
  • the contact spring assembly can be manufactured by methods commonly used in the manufacture of electronic modules and circuit boards.
  • the spring element by means of
  • Stencil or screen printing technique applied to the substrate e.g. by solder paste printing or solder resist paint pressure.
  • a prefabricated element is applied to the substrate for forming the spring element.
  • prefabricated elements particularly narrow and high spring elements can be formed, whereby a contact spring arrangement can be realized with a small footprint.
  • a semiconductor chip is further arranged on the substrate and forming the spring element includes depositing a film on the sub strate and ⁇ on the semiconductor chip, and patterning the film.
  • the film can be glued or laminated to the substrate.
  • the film is laminated under vacuum.
  • the film may consist of any thermo ⁇ plastics, thermosets and mixtures thereof.
  • the film may have an adhesive layer to improve adhesion to the surface.
  • the film may have a thickness of 10 .mu.m to 500 .mu.m, and the thickness of the film may preferably be 25 .mu.m to 150 .mu.m.
  • the lamination can take place, for example, with a vacuum press, by vacuum deep drawing, hydraulic vacuum pressing , vacuum pressure pressing or similar laminating methods, for example at a pressure of -850 mbar.
  • the lamination can be carried out, for example, at temperatures of 100 ° C to 250 ° C and a pressure of 1 bar to 10 bar.
  • the structuring of the film can be carried out, for example, using laser ablation or photochemical processes.
  • the formation of the spring element can be largely or completely integrated into existing processes.
  • the line element is formed during a process step, with a elekt ⁇ driven conductive connection between the semiconductor chip and the substrate is produced.
  • the conducting element can be formed using electrodeposition, or the conducting element can be arranged by means of a bonding process on the at least one contact surface, e.g. by wire bonding, in particular thick wire bonding, or ribbon bonding.
  • the spring element is formed in an embodiment in front of the line element. In another embodiment, the spring element is formed after the line member. For this purpose, for example, a subsequent filling process, an underfill process can be used, ie the conduit element is subsequently underfilled with a material for forming the spring element.
  • the method achieves particular advantages in that conventional technologies can be used to produce the contact spring arrangement.
  • the contact ⁇ spring arrangement can be made with the same technologies and in the same process steps, with which there is also a contact of one or more arranged on the substrate active semiconductor devices.
  • the contact spring arrangement can be formed partially or completely with the method known as SIPLIT for contacting electrical contact surfaces, wherein the above-described ⁇ method steps for applying a film to the substrate and structuring the film can be used and the conduit element in a process step galva ⁇ nisch is formed, in which also an electrically conductive connection between the semiconductor component and the sub ⁇ strate is produced.
  • the solution is based on the principle of separation of the system into separate spring contactrésein ⁇ units (elastic member and electrically conductive ele ment ⁇ ) which can be installed separately from one another by known methods.
  • the main advantage lies in the cost-effective production justified. In some cases, these methods are already used in the production of electronic modules or printed circuit boards anyway. This is especially the case with RF module developments with SIPLIT technology.
  • the contact spring assembly can be quasi free of charge without additional process steps with herge ⁇ provides.
  • the contact spring assembly is constructed in two steps one after the other.
  • the actual Federele ⁇ element is a separately produced, elastic elevation on the sub ⁇ strat. About this is in a second sub-step a produced electrically conductive trace. Both together form the spring contact of the contact spring arrangement.
  • the technologies for forming the contact spring assembly are, in particular, connection and termination techniques (AVT) in the chip industry, e.g.
  • Wire bonding in particular thick wire bonding with a wire diameter of 200 to 300 ym
  • ribbon bonding in particular thick wire bonding with a wire diameter of 200 to 300 ym
  • galvanic rewiring thin-film technologies, lithography, seed layer sputtering, electroplating, seed layer etch
  • SIPLIT Siemens planar interconnect technology
  • stencil and screen printing processes eg solder paste printing , Solder resist paint pressure.
  • FIG. 2 is a perspective view of the Kon ⁇ clock spring arrangement of Figure 1
  • Figure 3 is a cross-sectional view of the Needlesfe deran extract of Figure 1 in verbautem stood in a contact
  • FIG. 4 shows a flow chart for the representation of
  • FIGS. 5 and 6 are cross-sectional views of a contact spring arrangement according to the first and a second embodiment
  • FIGS. 8 and 9 are cross-sectional views of a contact spring assembly according to third and fourth embodiments.
  • 10 to 12 are cross-sectional views of a contact spring assembly according to the first, a fifth and sixth embodiments,
  • FIG. 13 is a flowchart for illustrating the
  • Figures 14 and 15 are cross-sectional views of a contact spring assembly according to a seventh embodiment
  • Figures 16 to Ii are perspective views of contact spring assemblies according to an eighth, ninth and tenth embodiments.
  • FIG. 1 shows a schematic cross section through a contact spring arrangement 10 according to a first exemplary embodiment.
  • the contact spring assembly includes a substrate 100, here a printed circuit board to 110. with a base plate Furthermore, the substrate 100 on the upper surface of the base plate a lei ⁇ tend layer having a first contact surface 120, a two-th contact surface 130 and a third contact surface 140 on , The contact surfaces are formed of a conductive material such as, copper. Furthermore, the substrate may have a further layer 150, which may be an insulation layer, for example can and covers the portions of the contact surfaces and / or the base plate 110.
  • the substrate 100 may comprise further contact surfaces. Likewise, on the substrate 100
  • the substrate 100 furthermore has a metallic layer 170 on the underside of the base plate 110.
  • This can play, be a copper layer at ⁇ and used for the production of a wiring structure. In other embodiments, there is no metallic layer on the underside.
  • a spring element 200 is arranged on the substrate 100. Ge ⁇ Gurss Figure 1, the spring element on the base plate 110 is arranged ⁇ , alternatively, the spring element can, however, also Example ⁇ partially or completely arranged on a contact surface to be.
  • the spring element 200 lies flat on the substrate 100 and thus has one of the topography of the sub ⁇ strats adapted bottom 210.
  • the substrate may have a ebe ⁇ ne or stepped topography.
  • the Fe ⁇ derelement one of the bottom 210 facing away from top surface 220.
  • the spring element 200 has, viewed in cross section, a HOE height h above the substrate 100, which is in the central region is largest and decreases towards the sides.
  • the spring element bil ⁇ det thus from above the substrate, a survey.
  • the height of the spring element 200 in the central region may be 10 microns to 2 millimeters.
  • a line element 300 is ⁇ forms.
  • the conduit member 300 is made of an electrically conductive material, preferably a metal. As shown in FIG. 1, the conduit member extends from a first end 310 disposed on the first contact surface 120 to a second end 320 disposed on the second contact surface 130.
  • the line element 300 provides an electrically conductive connection between the first contact surface 120 and the second contact surface 130 ready.
  • the Lei ⁇ processing element 300 has a larger Hö ⁇ he over the substrate in its central region between the first end 310 and second end 320 than in the region of the ends 310 and 320.
  • the spring element 200 is thus between the first and second contact surface 120 , 130 and disposed below the conduit member 300.
  • the conduit member 300 is only partially on the spring member 200 and is in the vicinity of the Kunststoffflä ⁇ Chen 120 and 130 spaced therefrom. This distance is optional, as well as the conduit member may be formed without a distance to the spring element 200.
  • Figure 2 shows a perspective view of the Whyfe ⁇ deran Aunt 10 according to the first embodiment.
  • the Fe ⁇ derelement 200 has the shape of an elongated shaped body with a length L perpendicular to the cross section shown in Figure 1.
  • the shaped body can be, for example, a prefabricated element which is adhesively bonded to the substrate.
  • the shaped body may be a solid element, or alternatively, the shaped body may have one or more cavities inside.
  • About the spring element 200 four plinsele ⁇ elements 300 are arranged.
  • the length L of the spring element 200 and the number of line elements 300 may vary within a wide range depending on the technical requirements.
  • the length L may for example, equal to the height H of the Federele ⁇ ments be 200, or the length L may be several times RESIZE ⁇ SSER than the height H of the spring element 200, for example to a three times to ten times or a hundred times.
  • the spring element may for example have a length of 500 ym up to 20 cm (centimeters), for example a length of 500 ym to 5 cm, alternatively, the length of the spring element 200 may be equal to one side of the circuit board.
  • Theêtfederan- assembly 10 can be a single line element 300, or two or more line elements 300, for example, comprise 10, or 100 line ⁇ elements.
  • each line element 300 is contacted individually with the contact surface 120 or 130.
  • a plurality of line elements may be contacted together with a Maisflä ⁇ che equally by a plurality of line elements have a joint end or both ends of a plurality of line elements formed as a common member.
  • the contact spring arrangement consists of a spring element and a line element.
  • the line element may be disposed on a Kon ⁇ clock area, or the conductor member may be disposed at two contact surfaces.
  • Figure 3 shows a cross-sectional view of the Mixerd ⁇ tion 10 and a contact receptacle 50 for explaining the operation of the contact spring assembly.
  • the contact receptacle 50 has a groove 500 with a height H2. The height H2 is less than the height of the contact spring.
  • F er ⁇ testifies, due to which a frictional connection between see the line element 300 and an upper electrically conductive contact surface 510 comes about.
  • the contact spring arrangement 10 can be pulled out of the groove 500. Then, the spring member 200 returns to the ur ⁇ nal, shown in Figure 1 form, the Fe ⁇ derelement 200 and the duct member 300 pushes back in the ur ⁇ nal form.
  • the contact spring assembly 10 may preferably be formed in a peripheral region of the substrate, that is ment least an outer edge of the substrate 100 and the Federele- between Minim ⁇ 200 no active semiconductor devices are located. As a result, the insertability of the contact spring assembly 10 is improved in the contact 50.
  • Figure 4 shows a flow diagram illustrating the process sequence of a first exemplary method for Her ⁇ position of a contact spring arrangement.
  • the substrate 100 is provided with at least one contact surface 130.
  • the spring member 200 is formed on the substrate 100. This can be done by means of various techniques, which are explained below with reference to FIGS. 5 to 9.
  • Figure 5 shows a partially finished Maisfederan- order 10 according to the first embodiment of the inven ⁇ tion, wherein the spring element 200 is applied by means of stencil or screen printing technique on the substrate 100.
  • the elastic material is painted through a fabric surface with dar ⁇ on attached stencil.
  • the template causes the material to pass through the tissue and onto the substrate only in the non-stenciled areas.
  • the elastic material is solidified, for example by means of a heat treatment.
  • the upper side 220 of the spring element 200 viewed in cross section, has a curved course, ie the height of the spring element increases continuously from the lateral edges 230, 240 to the central region of the cross section.
  • the upper ⁇ side 220 has viewed in cross-section a substantially convex course.
  • FIG. 6 shows a partially finished contact spring arrangement 10A according to a second exemplary embodiment of the invention with a spring element 200A which has been applied to the substrate 100 as a prefabricated element.
  • the substrate 100 is the substrate described in FIG.
  • the attachment of the prefabricated element can be done for example by gluing.
  • the adhesion of the prefabricated element may be sufficient for attachment.
  • the element 200A has a convex cross section.
  • the top surface 220A of the spring member 200A meets at an angle to the underside 210A of the Federele ⁇ ments 200A.
  • the angle is a right angle. In this way, a large spring height can be achieved in a particularly low ⁇ gem place.
  • the angle may be, for example, an acute angle, for example, 5 ° ⁇ 89 °.
  • the prefabricated spring element have other Querschnit ⁇ te, for example, triangular or stepped Querschnit ⁇ te.
  • the spring element can be purchased from commercial or a commercially available spring element.
  • Figure 7 shows a perspective view of the vorgefer ⁇ saturated spring element 200A as shown in FIG 6.
  • the spring element 200A has a planar bottom surface 210A and a lead equal ⁇ reproduced cross-section over the entire length L of the spring member 200A.
  • Figure 8 shows a partially finished contact spring ⁇ arrangement 10B according to a third embodiment of the invention with a spring element 200B, which consists of three superimposed layers of material.
  • the substrate is the substrate described with reference to Figure 1, 100.
  • the Ma ⁇ terial Anlagenen can for example be applied as films successively onto the substrate and patterned there, or they can be used already preformed, structured stack up to be brought.
  • the material layers can be structured, for example, by laser ablation or by photochemical methods. Alternatively, only two, or four or more layers of material can be arranged one above the other to form the spring element.
  • a first material layer 250B having a first width B1 is arranged on the substrate 100.
  • a second material layer 260B having a second width B2 is disposed on the first material layer 250B.
  • a third Ma ⁇ terial Anlagen 270B having a third width B3 is disposed on the second material layer 260B.
  • the widths of the Ma ⁇ terial scaffolden take of the first material layer 250B from the third material layer 270B, ie B1>B2> B3.
  • the Fe derelement 200B thus has a width which gradually decreases with increas shaped ⁇ mendem distance from the substrate.
  • the material layers 250B, 260B and 270B have the same thickness and are made of the same material. Alternatively, however, it is also possible to combine foils of different materials and / or with different thicknesses as desired. At least one layer of material may be formed of elastic material.
  • Figure 9 shows a partially completed contact spring ⁇ assembly 10C according to a fourth exemplary embodiment of the invention ⁇ , wherein further contact surfaces 180 are formed in the manner described with reference to Figure 1, substrate 190th On the substrate 100, the spring member described with reference to Figure 8, 200B and a semiconducting ⁇ terchip 400 are further arranged.
  • the semiconductor chip 400 may be adhesively bonded to the substrate 100 on its underside, for example.
  • a foil 250 is arranged flat over the substrate and over the chip 400.
  • the film 250 is patterned in some areas, to expose underlying areas of the chip 400 and the substrate 100, such as the contact surfaces 180, 190 and Ranflä ⁇ surfaces 410 and 420 of the chip 400th
  • the film 250 forms, for example, an insulation for one in a later Step to be formed metallization.
  • the film 250 is also formed in the area of the spring element 200B and forms the layer 250B there.
  • the spring element 200B further comprises the foil layers 260B and 270B as described with reference to FIG.
  • the film 250 could also form the material ⁇ layer 260B or 270B.
  • the film may consist of any thermoplastics, thermosets and mixtures thereof.
  • a film of a plastic material on polyimide (Pi), polyethylene (PE), polyphenol, polyetheretherketone (PEEK) - and / or epoxy-based is used.
  • the film may have an adhesive layer to improve adhesion to the surface.
  • the film may have a thickness of 10 .mu.m to 500 .mu.m, preferably the thickness of the film is 25 .mu.m to 150 .mu.m.
  • the film 250 may be laminated to the substrate and then patterned.
  • the laminating can take place, for example, under vacuum with a vacuum press, by vacuum deep drawing, hydraulic vacuum pressing, vacuum pressure pressing or similar laminating methods, eg at a pressure of -850 mbar.
  • the lamination takes place for example at temperatures of 100 ° C to 250 ° C and a
  • an adhesive can be used for better attachment of the films.
  • the structuring of the film may e.g. done by laser ablation or photochemical methods.
  • FIG. 10 shows a cross-sectional view of the contact spring arrangement 10, wherein the conduit element 300 has been arranged on the substrate by means of a bonding method at its ends 310, 320.
  • the substrate is that described with reference to Figure 1 ⁇ be required substrate 100.
  • the conduit member 300 can play, of a bonding wire or a flat strip best ⁇ hen at ⁇ .
  • the conduit element can be produced, for example, by means of thermocompression onsbonden, thermosonic ball wedge bonding, ultrasonic wedge-wedge bonding or other suitable bonding method on the substrate 100 are arranged.
  • the conduit element 300 does not touch the spring element 200 described with reference to FIG. However, this is not necessary, but the line member 300 may partially contact the spring element 200 or rest flat on this.
  • FIG. 11 shows a cross-sectional view of a contact spring arrangement 10D according to a fifth exemplary embodiment of the invention.
  • a line ⁇ element 300D has been formed by electrodeposition on the substrate 100 and over the spring element 200, which have been described with reference to FIG. 1
  • a mask layer can be formed on the substrate.
  • the mask layer is patterned by conventional methods, so that the mask layer in the areas is removed ⁇ ent, in which the lead member 300D to be formed.
  • a thin metallic nucleation layer can be formed on the cover layer and in the exposed layers
  • the nucleation layer may be formed by physical vapor deposition (PVD) or chemical vapor deposition (CVD).
  • the nucleation layer can also be deposited over the substrate in a planar manner and patterned into the desired shape by means of a mask. After removal of the mask layer, the nucleation ⁇ layer remains in the areas in which the line element is to be formed and can be reinforced by electrodeposition with an electrically conductive layer, whereby the line element 300D is formed.
  • the line element 300D is preferably flat on the spring element 200.
  • Figure 12 shows a cross-sectional view of a contact spring arrangement ⁇ 10E according to a sixth embodiment, wherein the substrate 100 wei ⁇ tere contact surfaces 180, 190 described with reference to Figure 1 and comprising on the substrate 100 Furthermore, a semiconductor chip 400 is arranged. This can be glued, for example, on its underside with the substrate.
  • the contact spring assembly 10E includes the above beschrie ⁇ bene spring element 200 and a lead member 300E.
  • the film 250 as described with reference to FIG. 9, is partially disposed over the substrate 100 and over the semiconductor chip 400.
  • the film 250 has recesses at least in the region of the contact surfaces 120, 130, 140, 180 and 190 as well as in the region of the connection surfaces 410 and 420 of the semiconductor chip 400.
  • a metallic layer 430E is located above the Fo ⁇ lie 250 and provides an electrical connection between the pad 410 and 420 of the chip 400 and the contact surfaces 180 and 190 of the substrate.
  • the line element 300E is formed in the same process step in which the metalli ⁇ specific layer 430E is formed.
  • the metallic layer 430E and the conductive member 300E may preferably be made of the same material.
  • the metallic layer 430E and 300E the lead member are preferably formed by means of galvanic deposition, in particular in a common process step, as described above with respect to the Lei ⁇ processing element 300D in FIG. 11
  • the spring element 200 is formed by means of screen ⁇ printing process and has an arcuate top page.
  • a spring element with a step-shaped tapered cross-section as shown in Figure 9, can be used.
  • the spring element may consist of several layers, in particular a partial region of the film 250 may form a layer of the spring element.
  • the prefabricated spring element 200A can be combined with the line element 300 described above, which was produced by means of bonding methods, or with the galvanically formed line element 300D according to FIG. 11.
  • the step-shaped spring element 200A can also be combined.
  • Youngest spring element 200B according to FIGS. 8 and 9 can be combined with the bonded line element 300 or with the galvanically formed line element 300D.
  • FIG. 13 shows a flow chart for illustrating the process sequence of a second exemplary method for producing a contact spring arrangement. In this method, the line element is formed on the sub ⁇ strat before the spring element.
  • Figure 14 shows a contact spring assembly 10F according to a seventh embodiment, after forming a Lei ⁇ processing elements 300F above with reference to Figure 1, be ⁇ signed substrate 100.
  • the line element 300F can accession example by a with reference to the figures 10 to 12 be ⁇ written method are formed, preferably with ⁇ tels bonding.
  • the line element 300F may consist of a Bond ⁇ wire or ribbon.
  • the line element can contain a galvanically deposited material, for example, by forming the line element over a dummy structure and subsequently removing the dummy structure.
  • FIG. 15 ge ⁇ shows, the cavity 600 filled with an elastic material for forming the spring element 200F.
  • a subsequent fill-in process is used, such as a capillary underfill ⁇ larer in which a flowable material is introduced into the cavity 600 and this completely fills due to Kapil ⁇ lar kitn.
  • the flowable material can then be cured eg by a tempering process.
  • Figures 16 and 17 are perspective views of contact spring assemblies 10G and 10H according to eighth and ninth embodiments.
  • the line element 300G and 300H 100 contacts the substrate only on one side of Federele ⁇ ments 200th
  • the line element 300G or 300H contacts the second contact surface 130 of the substrate 100 with a first end 310G or 310H.
  • the line element 300G or 300H extends from the second contact surface 130 to the highest point of the spring element 200.
  • the line element can also extend to the side facing away from the second Kon ⁇ contact surface 130 side 280 of the spring element rich without touching the substrate 100 on this page or to contact.
  • the conductor elements 300G and 300H can be bonding wires, flat strips or electrodeposited metal. Likewise, a different number of line ⁇ elements 300G and 300H can be used as shown in Figure 16 and 17, respectively.
  • the contact spring arrangements 10, 10A, 10B, 10C, 10D, 10E, 10F shown in FIGS. 1 to 4 and described above can use line elements which contact the substrate only on one side.
  • Figure 18 shows a perspective view of a con ⁇ clock spring assembly 101, which consists of several Mixfederanord ⁇ voltages 10G on a common substrate 100th These can, as shown, next to each other, ie be arranged in the longitudinal direction of the line elements.
  • the contact spring arrangements can also be arranged one behind the other, ie along a line transversely to the longitudinal direction of the line elements or offset as desired.
  • contact spring arrangements with different ⁇ nen spring elements can be combined with each other, eg contact spring arrangements with a step-shaped tapered spring element and an arcuate spring element.
  • contact spring arrangements can be combined with different line elements together, for example, a contact spring arrangement with bonded line element can be combined with a Maisfe ⁇ deran extract with galvanically formed line element.
  • a contact spring arrangement whose line element is arranged on only one contact surface can also be combined with a contact arrangement in which the line element is arranged on two contact surfaces.
  • contact spring arrangements are arranged reasonable on a substrate, these can have a common terminal bil ⁇ , alternatively, the contact spring arrangements may also provide different connections for a plurality of modules or circuit boards. While the invention has been further illustrated and described in detail by the preferred embodiments, the invention is not limited by the disclosed examples, and other variations can be derived therefrom by those skilled in the art without departing from the scope of the invention.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

La présente invention concerne un agencement de ressort de contact comprenant un substrat (100) qui présente au moins une surface de contact (130), un élément de rappel (200) disposé sur le substrat (100), et un élément conducteur (300) qui est disposé contre la première surface de contact (130) et passe au-dessus de l'élément de rappel (200).
PCT/EP2012/067136 2011-09-26 2012-09-03 Agencement de ressort de contact et son procédé de réalisation WO2013045222A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011083423.0 2011-09-26
DE102011083423A DE102011083423A1 (de) 2011-09-26 2011-09-26 Kontaktfederanordnung und Verfahren zur Herstellung derselben

Publications (1)

Publication Number Publication Date
WO2013045222A1 true WO2013045222A1 (fr) 2013-04-04

Family

ID=46970242

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/067136 WO2013045222A1 (fr) 2011-09-26 2012-09-03 Agencement de ressort de contact et son procédé de réalisation

Country Status (2)

Country Link
DE (1) DE102011083423A1 (fr)
WO (1) WO2013045222A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI581512B (zh) * 2016-01-22 2017-05-01 宏達國際電子股份有限公司 電連接器及電子裝置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017131077B4 (de) * 2017-12-22 2022-03-24 CiS Forschungsinstitut für Mikrosensorik GmbH Verfahren zum Erzeugen einer Kontaktierfläche und Kontaktierfläche für die Montage mindestens eines Halbleiterchips auf einem Substrat
DE102020208360B4 (de) * 2020-07-03 2022-03-24 Vitesco Technologies Germany Gmbh Formdraht, Leiterplatte, Leistungselektronik und Verfahren zur Herstellung einer Leiterplatte

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3114587A (en) * 1961-10-02 1963-12-17 Adolf L Herrmann Flat cables and corresponding connector
DE2449739A1 (de) * 1974-10-19 1976-04-29 Junghans Gmbh Geb Kontaktanordnung fuer eine auswechselbare elektronische baueinheit
US3977756A (en) * 1975-09-22 1976-08-31 General Motors Corporation Transitional connector for printed circuits
DE2920546A1 (de) * 1978-05-22 1979-11-29 Rogers Corp Loetfreie verbindung von elektrischen schaltkreiselementen
DE3623906A1 (de) * 1986-07-15 1988-01-21 Siemens Ag Hoergeraet
US6234820B1 (en) * 1997-07-21 2001-05-22 Rambus Inc. Method and apparatus for joining printed circuit boards
WO2001075969A1 (fr) * 2000-03-31 2001-10-11 Infineon Technologies Ag Composant electronique pourvu de points de contact flexibles, et son procede de fonctionnement
DE10126296A1 (de) * 2001-05-30 2002-12-12 Infineon Technologies Ag Verfahren zur Herstellung eines elektronischen Bauelements sowie elektronisches Bauelement
WO2003023819A2 (fr) * 2001-09-12 2003-03-20 Dow Corning Corporation Appareil avec bornes electriques souples et procedes de fabrication correspondants
EP1424749A2 (fr) * 2002-11-29 2004-06-02 Behr GmbH & Co. KG Système pour établir une connexion électrique avec un conducteur, en particulier pour système de chauffage ou de climatisation de véhicule
US20050127521A1 (en) * 2003-11-27 2005-06-16 Axel Brintzinger Electronic component with compliant elevations having electrical contact areas and method for producing it
DE102004057494A1 (de) * 2004-11-29 2006-06-08 Siemens Ag Metallisierte Folie zur flächigen Kontaktierung
US20080218799A1 (en) * 2003-12-02 2008-09-11 Super Talent Electronics, Inc. Extended COB-USB With Dual-Personality Contacts

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004030140B3 (de) * 2004-06-22 2006-01-19 Infineon Technologies Ag Flexible Kontaktierungsvorrichtung
JP5125314B2 (ja) * 2007-08-22 2013-01-23 セイコーエプソン株式会社 電子装置
DE202007017363U1 (de) * 2007-12-11 2008-03-13 CCS Technology, Inc., Wilmington Elektrischer Steckverbinder

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3114587A (en) * 1961-10-02 1963-12-17 Adolf L Herrmann Flat cables and corresponding connector
DE2449739A1 (de) * 1974-10-19 1976-04-29 Junghans Gmbh Geb Kontaktanordnung fuer eine auswechselbare elektronische baueinheit
US3977756A (en) * 1975-09-22 1976-08-31 General Motors Corporation Transitional connector for printed circuits
DE2920546A1 (de) * 1978-05-22 1979-11-29 Rogers Corp Loetfreie verbindung von elektrischen schaltkreiselementen
DE3623906A1 (de) * 1986-07-15 1988-01-21 Siemens Ag Hoergeraet
US6234820B1 (en) * 1997-07-21 2001-05-22 Rambus Inc. Method and apparatus for joining printed circuit boards
WO2001075969A1 (fr) * 2000-03-31 2001-10-11 Infineon Technologies Ag Composant electronique pourvu de points de contact flexibles, et son procede de fonctionnement
DE10126296A1 (de) * 2001-05-30 2002-12-12 Infineon Technologies Ag Verfahren zur Herstellung eines elektronischen Bauelements sowie elektronisches Bauelement
WO2003023819A2 (fr) * 2001-09-12 2003-03-20 Dow Corning Corporation Appareil avec bornes electriques souples et procedes de fabrication correspondants
EP1424749A2 (fr) * 2002-11-29 2004-06-02 Behr GmbH & Co. KG Système pour établir une connexion électrique avec un conducteur, en particulier pour système de chauffage ou de climatisation de véhicule
US20050127521A1 (en) * 2003-11-27 2005-06-16 Axel Brintzinger Electronic component with compliant elevations having electrical contact areas and method for producing it
US20080218799A1 (en) * 2003-12-02 2008-09-11 Super Talent Electronics, Inc. Extended COB-USB With Dual-Personality Contacts
DE102004057494A1 (de) * 2004-11-29 2006-06-08 Siemens Ag Metallisierte Folie zur flächigen Kontaktierung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI581512B (zh) * 2016-01-22 2017-05-01 宏達國際電子股份有限公司 電連接器及電子裝置

Also Published As

Publication number Publication date
DE102011083423A1 (de) 2013-03-28

Similar Documents

Publication Publication Date Title
DE69938582T2 (de) Halbleiterbauelement, seine herstellung, leiterplatte und elektronischer apparat
DE102005032489B3 (de) Leiterplatten-Mehrschichtaufbau mit integriertem elektrischem Bauteil und Herstellungsverfahren
DE102011006489B4 (de) Leiterplatte mit eingebautem Halbleiterchip und Verfahren zur Herstellung derselben
DE102008014296B4 (de) Festelektrolytkondensator und Verfahren zu seiner Herstellung
DE102018207955B4 (de) Leiterplattenmodul mit integriertem leistungselektronischen Metall-Keramik-Modul sowie Verfahren zu dessen Herstellung
EP1279195A1 (fr) Composant electronique pourvu de points de contact flexibles, et son procede de fonctionnement
WO2004015770A1 (fr) Support de circuit a plusieurs couches et fabrication dudit support
EP2566308B1 (fr) Procédé d'équipement d'une plaquette
WO2012072212A2 (fr) Composant électronique, procédé pour sa fabrication et plaquette de circuits imprimés comportant un composant électronique
EP3231261A1 (fr) Carte de circuits imprimés à structure de couches asymétrique
DE102013100339B4 (de) Verfahren zur Herstellung eines elektronischen Bauelements und flexible Schichtstruktur
DE102006015447A1 (de) Leistungshalbleiterbauelement mit einem Leistungshalbleiterchip und Verfahren zur Herstellung desselben
DE102013102542A1 (de) Elektronisches Bauteil und Verfahren zum Herstellen eines elektronischen Bauteils
DE102012212968A1 (de) Optoelektronisches halbleiterbauteil mit elektrisch isolierendem element
EP2852970B1 (fr) Procédé de fabrication d'un module électronique
WO2013013964A1 (fr) Dispositif support, dispositif électrique pourvu d'un dispositif support, et procédé de fabrication de ces dispositifs
EP2973687A1 (fr) Composant électronique, son procédé de fabrication et carte de circuit imprimé équipée d'un composant électronique
DE19522338B4 (de) Chipträgeranordnung mit einer Durchkontaktierung
DE102011083627A1 (de) Verfahren zur Kontaktierung eines elektronischen Bauteils und Baugruppe mit einem elektronischen Bauteil auf einem Substrat
DE102020125813A1 (de) Verfahren zum herstellen eines chipgehäuses und chipgehäuse
DE102008058003B4 (de) Verfahren zur Herstellung eines Halbleitermoduls und Halbleitermodul
WO2009068010A1 (fr) Module d'électronique de puissance laminé
WO2013045222A1 (fr) Agencement de ressort de contact et son procédé de réalisation
WO1996021947A1 (fr) Ensemble porte-puce et porte-puce utilises pour la production d'un boitier de puce
WO2009098033A1 (fr) Procédé de fabrication d'une plaquette

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12768748

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12768748

Country of ref document: EP

Kind code of ref document: A1