WO2013042570A1 - Dispositif d'émission d'énergie, dispositif de réception d'énergie, système d'émission d'énergie sans contact et procédé permettant de commander l'énergie d'émission dans un tel système - Google Patents

Dispositif d'émission d'énergie, dispositif de réception d'énergie, système d'émission d'énergie sans contact et procédé permettant de commander l'énergie d'émission dans un tel système Download PDF

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WO2013042570A1
WO2013042570A1 PCT/JP2012/073069 JP2012073069W WO2013042570A1 WO 2013042570 A1 WO2013042570 A1 WO 2013042570A1 JP 2012073069 W JP2012073069 W JP 2012073069W WO 2013042570 A1 WO2013042570 A1 WO 2013042570A1
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Prior art keywords
power
circuit
power transmission
modulation signal
frequency band
Prior art date
Application number
PCT/JP2012/073069
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English (en)
Japanese (ja)
Inventor
三品　浩一
賢史 森
Original Assignee
Ｎｅｃトーキン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Ｎｅｃトーキン株式会社 filed Critical Ｎｅｃトーキン株式会社
Priority to JP2013503686A priority Critical patent/JP5276755B1/ja
Priority to KR1020137012038A priority patent/KR20130099152A/ko
Publication of WO2013042570A1 publication Critical patent/WO2013042570A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
    • H04B5/79—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for data transfer in combination with power transfer
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H02J50/12—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/80—Circuit arrangements or systems for wireless supply or distribution of electric power involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00308—Overvoltage protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
    • H03H3/0077—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients by tuning of resonance frequency
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/20—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
    • H04B5/24—Inductive coupling
    • H04B5/26—Inductive coupling using coils

Definitions

  • the present invention relates to a non-contact power transmission system for transmitting power from a power transmission device to a power reception device in a contactless manner.
  • the power receiving device is a portable electronic device
  • the power transmission device is a charger for the portable electronic device.
  • the load on the power receiving device side is too low compared to the assumed load, the received voltage becomes too high, and the components in the power receiving device may be destroyed.
  • Patent Document 1 discloses a non-contact power transmission system that controls the transmission power from the power transmission device side by feeding back the received voltage to the power transmission device as means for solving such a problem.
  • This non-contact power transmission system includes a coil pair (transformer: antenna pair) used for power transmission from a power transmission device to a power reception device, and an auxiliary coil pair (used for transmission of a feedback signal from the power reception device to the power transmission device).
  • Auxiliary transformer auxiliary antenna pair).
  • Patent Document 2 discloses a power receiving device (secondary device) having a control circuit that performs voltage control.
  • the power receiving device of Patent Document 2 controls the power receiving voltage level to be close to an appropriate value by changing the load according to the power receiving voltage instead of feeding back the power receiving voltage to the power transmitting device.
  • JP 2008-263379 A Japanese Patent Laying-Open No. 2005-278400, Embodiment 6, FIG.
  • the power transmission device controls transmission power after the feedback signal is transmitted from the power reception device to the power transmission device. That is, a certain period of time elapses between the occurrence of an overvoltage caused by a low load in the power receiving apparatus and the control. Therefore, there is a possibility that parts in the power receiving device are destroyed due to overvoltage in the meantime.
  • the problem of the above-described non-contact power transmission system of Patent Document 1 does not occur.
  • the power transmission device cannot know the control in the power reception device, and therefore cannot be optimized even if inefficient power transmission is performed.
  • an object of the present invention is to provide a non-contact power transmission system capable of controlling the received voltage without time lag and transmitting the state of the received voltage to the power transmission device to control the transmitted power to an appropriate level. To do.
  • One aspect of the present invention is a power transmission device that transmits AC power on a carrier wave to a power receiving device,
  • the power receiving device is capable of superimposing a modulation signal on the carrier wave of the AC power by changing a load of the power receiving device,
  • the power transmission device is: With a power transmission antenna; A driver circuit for driving the power transmission antenna and transmitting the AC power on the carrier wave; A power transmission control circuit for controlling the driver circuit; A matching circuit that is provided between the driver circuit and the power transmission antenna and matches the output impedance of the driver circuit and the impedance of the power transmission antenna; A detection circuit for detecting the modulation signal superimposed on the carrier wave of the AC power and transmitting it to the power transmission control circuit;
  • the power transmission control circuit provides a power transmission device that controls the driver circuit based on the modulation signal.
  • the power receiving device is: A receiving antenna; A rectifier circuit that rectifies the AC power received by the power receiving antenna and converts it into DC power; A voltage detection circuit for detecting an output voltage of the rectifier circuit; Changing the resonance frequency of the power receiving antenna by changing the load according to the output of the voltage detection circuit to control the reception of the AC power and changing the resonance frequency to superimpose the modulation signal on the carrier wave of the AC power With circuit; A non-contact power transmission system is provided.
  • another aspect of the present invention provides A method for controlling transmitted power in a non-contact power transmission system comprising a power receiving device and a power transmitting device that transmits AC power on a carrier wave to the power receiving device, A first process in which the power receiving apparatus controls a received power in the power receiving apparatus by changing a load of the power receiving apparatus; A second process in which the power transmission device detects a modulation signal superimposed on the carrier wave of the AC power according to a change in a load of the power reception device, and controls the transmission power based on the detected modulation signal; Provided is a transmission power control method.
  • the power receiving device controls the received voltage by changing the load, and is superimposed on the AC power carrier by load modulation along with the control of the received voltage.
  • the transmission power can be further controlled based on the modulation signal. Therefore, according to the present invention, it is possible to achieve both power reception voltage control without time lag and efficient power transmission control.
  • the modulation signal based on the load modulation described above is used as a feedback signal, and it is not necessary to separately provide a system dedicated to feedback signal transmission.
  • the configuration can be simplified, and therefore, the system can be constructed at low cost.
  • FIG. 1 is a block diagram showing a non-contact power transmission system according to a first embodiment of the present invention. It is a circuit diagram which shows the detection circuit in the non-contact electric power transmission system of FIG. It is a circuit diagram which shows the resonant frequency change circuit in the non-contact electric power transmission system of FIG. It is a circuit diagram which shows the voltage detection circuit in the non-contact electric power transmission system of FIG. It is the figure which showed typically the feedback signal waveform etc. in the non-contact electric power transmission system of FIG. The upper part schematically shows a feedback signal waveform in which the modulation signal is superimposed on the carrier wave, and the lower part schematically shows the output waveform of the detection circuit.
  • FIG. 2 is a circuit diagram illustrating a driver circuit and a current monitor circuit in the non-contact power transmission system of FIG. 1. It is a block diagram which shows the non-contact electric power transmission system by the 3rd Embodiment of this invention. It is the figure which showed typically the feedback signal waveform in the non-contact electric power transmission system of FIG.
  • the upper part schematically shows a waveform in which a modulation signal and an additional modulation signal are superimposed on the carrier wave
  • the lower part A schematically shows the output waveform (modulation signal) of the first bandpass filter
  • the lower part B shows the waveform.
  • 2 schematically shows the output waveform (additional modulation signal) of No. 2 band-pass filter.
  • the non-contact power transmission system 1 As shown in FIG. 1, the non-contact power transmission system 1 according to the first embodiment of the present invention includes a power transmission device 4 and a power reception device 7.
  • the power transmission device 4 includes a power transmission antenna 10 that transmits power, a driver circuit 12 that drives the power transmission antenna 10, a power transmission control circuit 11 that controls power transmission by controlling the driver circuit 12, and a power transmission antenna 10 and a driver circuit 12.
  • a matching circuit 13 for impedance matching and a detection circuit 14 for detecting a modulation signal (feedback signal: described later) transmitted by the power receiving device 7 are provided.
  • the power transmission control circuit 11 includes a CPU (not shown) and the like, controls the output power of the power transmission power circuit (not shown), and generates a pulse signal for driving the driver circuit 12.
  • the power transmission antenna 10 is electromagnetically coupled to the power reception antenna 20 of the power reception device 7 to transmit electric power to the power reception device 7 and receives a modulation signal transmitted from the power reception device 7.
  • a loop coil printed on a printed board can be used.
  • the driver circuit 12 is mainly composed of a bipolar transistor or a field effect transistor (hereinafter referred to as FET) (not shown), and generates a transmission power waveform according to the pulse signal generated by the power transmission control circuit 11. In other words, the driver circuit 12 drives the power transmission antenna 10 to transmit AC power on the carrier wave to the power receiving device 7.
  • FET field effect transistor
  • the matching circuit 13 is mainly composed of a capacitor (not shown), and matches the impedance of the power transmitting antenna 10 and the impedance of the power receiving antenna 20.
  • the detection circuit 14 detects the modulation signal transmitted by the power receiving device 7 and receives it as a feedback signal.
  • the detected modulation signal is transmitted to the power transmission control circuit 11 and used for power transmission control.
  • an envelope detection circuit using a diode can be used for the detection circuit 14.
  • the detection circuit 14 includes a diode 15 having an anode connected to the power transmission antenna 10 and a cathode connected to the transmission / reception control circuit 11.
  • a coil 16 connected between the anode and the ground, and a resistor 17 and a capacitor 18 connected between the cathode of the diode 15 and the ground are provided.
  • the power receiving device 7 receives the AC power from the power transmitting device 4, the resonance frequency changing circuit 21 that changes the resonance frequency of the power receiving antenna 20, and the AC received by the power receiving antenna 20.
  • a rectifier circuit 22 that rectifies power to convert it to DC power, a voltage detection circuit 23 that detects an output voltage of the rectifier circuit 22, and a load 24 that is supplied with power from the power receiving device 7 are provided.
  • the power receiving antenna 20 is electromagnetically coupled to the power transmitting antenna 10 to receive power from the power transmitting device 4, and transmits a modulation signal (described later) to the power transmitting device 4.
  • a modulation signal (described later) to the power transmitting device 4.
  • the power receiving antenna 20 for example, a loop coil laid out on a printed board can be used.
  • the resonance frequency changing circuit 21 is configured by combining at least a plurality of capacitors, FETs, and resistors.
  • the resonance frequency changing circuit 21 includes a first impedance 41, a second impedance 42, a third impedance 43, FETs 44 and 45, and And a resistor 46.
  • the first impedance 41, the second impedance 42, and the third impedance 43 are all capacitors, and the second impedance 42 and the third impedance 43 have the same capacitance.
  • One end of the second impedance 42 is connected to the drain of the FET 44, and the other end of the second impedance 42 is connected to the terminal a1 of the power receiving antenna 20.
  • one end of the third impedance 43 is connected to the drain of the FET 45, and the other end of the third impedance 43 is connected to the terminal a ⁇ b> 2 of the power receiving antenna 20.
  • the gates and sources of the FETs 44 and 45 are connected to each other, and the center tap CT is drawn from the source.
  • the resistor 46 is connected between the gates and sources of the FETs 44 and 45, and the center tap CT is connected to the ground.
  • the resonance frequency changing circuit 21 has a center tap CT as a circuit center and is symmetric with respect to the center tap CT.
  • the resonance frequency changing circuit 21 includes a circuit in which a second impedance 42, a third impedance 43, and an equivalent series resistance resulting from the on-resistance of the FET are connected in series, and a first impedance 41 Is equivalent to a circuit formed by connecting in parallel.
  • the resonance frequency changing circuit 21 includes a circuit in which the second impedance 42 and the third impedance 43 and the parasitic capacitance caused by the FETs 44 and 45 are connected in series, and the first impedance 41. Is equivalent to a circuit formed by connecting in parallel.
  • the resonance frequency also changes.
  • the impedance is adjusted so that the power receiving efficiency is maximized when the FETs 44 and 45 are off, and the power receiving voltage is lowered when the FETs 44 and 45 are on.
  • the resonance frequency is set in advance so that the power receiving efficiency is maximized when the load 24 is heavy, and the resonance frequency changing circuit 21 operates to switch the resonance frequency when the load 24 becomes light and the power receiving voltage rises. And When the resonance frequency is switched, the power receiving efficiency is lowered and the power receiving voltage is also lowered.
  • the resonance frequency changing circuit 21 is connected to the rectifier circuit 22 at terminals b1 and b2.
  • the rectifier circuit 22 is a single-layer bridge rectifier circuit configured using four diodes. That is, the rectifier circuit 22 according to the present embodiment is a full-wave rectifier circuit and is more efficient than that of Patent Document 2.
  • the rectifier circuit 22 further includes a rectified output terminal Vd and a ground terminal (not shown).
  • the rectified output terminal Vd is connected to the voltage detection circuit 23 and the load 24, and the ground terminal is connected to the center tap CT of the resonance frequency changing circuit 21 described above.
  • the voltage detection circuit 23 has a hysteresis characteristic and includes at least a plurality of transistors, resistors, and Zener diodes.
  • the voltage detection circuit 23 includes a Zener diode ZDs and a gate drive circuit 60.
  • the illustrated gate drive circuit 60 includes bipolar transistors 61 and 62, resistors R1 to R5, and Zener diodes ZDc and ZDp.
  • the gate drive circuit 60 uses the rectified DC voltage (that is, the output voltage of the rectifier circuit 22) as a drive power supply. If the output voltage of the rectifier circuit 22 is excessively high, the FETs 44 and 45 may be destroyed. Therefore, the breakdown voltage of the Zener diode ZDp is less than the withstand voltage between the gate and the source of the FET used in the resonance frequency changing circuit 21. Is desirable.
  • a resistor R1 is connected between the base of the bipolar transistor 61 and the anode of the Zener diode ZDs, and a resistor R2 is connected between the rectified output terminal Vd and the collector of the bipolar transistor 61.
  • a resistor R3 is connected between the rectified output terminal Vd and the collector of the bipolar transistor 62.
  • a resistor R4 is connected between the base of the bipolar transistor 61 and the ground terminal GND. The emitter of the bipolar transistor 61 and the ground terminal A resistor R5 is connected to GND.
  • the base of the bipolar transistor 62 is connected to the collector of the bipolar transistor 61, and the emitter of the bipolar transistor 62 is connected to the emitter of the bipolar transistor 61.
  • the cathode of the Zener diode ZDp is connected to the collector of the bipolar transistor 62, and the anode is connected to the ground terminal GND.
  • the cathode of the Zener diode ZDc is connected to the collector of the bipolar transistor 62, and the anode is connected to the FETs 44 and 45 as a terminal c1.
  • the Zener diode ZDs breaks down.
  • the voltage applied to the base of the bipolar transistor 61 is determined by dividing the voltage drop caused by the Zener diode ZDs from the rectified DC voltage by the resistors R1 and R4.
  • the voltage applied to the base of the bipolar transistor 61 is equal to or higher than the sum (VE + VBE) of the emitter potential VE of the bipolar transistor 61 with respect to the ground terminal GND and the base-emitter voltage VBE of the bipolar transistor 61 necessary for switching the bipolar transistor 61. Then, current flows out to the base and the bipolar transistor 61 is turned on.
  • the resistor R1 and the resistor R4 are selected so that the bipolar transistor 61 is turned on when the Zener diode ZDs becomes conductive.
  • the on / off of the bipolar transistor 61 and the bipolar transistor 62 are inverted with each other. That is, when the bipolar transistor 61 is off, the bipolar transistor 62 is on, and when the bipolar transistor 61 is on, the bipolar transistor 62 is off.
  • the emitter potential VE of the bipolar transistor 61 is determined by the voltage dividing ratio between the resistor R2 and the resistor R5 and the DC voltage after rectification.
  • the emitter potential VE of the bipolar transistor 61 is determined by the voltage dividing ratio of the resistors R3 and R5 and the rectified DC voltage.
  • the emitter potential VE of the bipolar transistor 61 can be changed between when the bipolar transistor 61 is on and when it is off.
  • the resistor R2 when the resistor R2 is set larger than the resistor R3, the resistor R3 is set larger than the resistor R5, and the resistor R5 is set to a value sufficiently smaller than the resistor R2, the emitter is turned on when the bipolar transistor 61 is turned on.
  • the potential VE is closer to the ground potential.
  • the FETs 44 and 45 of the resonance frequency changing circuit 21 shown in FIG. 3 have a voltage drop caused by the Zener diode ZDc from the voltage obtained by dividing the rectified DC voltage by the resistors R3 and R5. The subtracted voltage is applied. In the present embodiment, this voltage is set lower than the voltage necessary for turning on the FETs 44 and 45. That is, when the bipolar transistor 62 is on, the resonance frequency remains at the initial value.
  • this voltage is set to a value that can reliably turn on the FETs 44 and 45. That is, when the FETs 44 and 45 are turned on, the resonance frequency changing circuit 21 switches the resonance frequency to lower the received voltage.
  • the resistor R2 is made sufficiently larger than the resistor R5, the voltage generated at both ends of the resistor R5 when the bipolar transistor 62 is off is sufficiently smaller than the voltage at the rectified output terminal Vd. Is substantially about the base-emitter voltage VBE of the bipolar transistor 61 necessary for switching of the bipolar transistor 61.
  • the bipolar transistor 61 is kept on when the base voltage of the bipolar transistor 61 is higher than the base-emitter voltage VBE.
  • the bipolar transistor 61 is turned off and the bipolar transistor 62 is turned on only when the base voltage becomes smaller than the base-emitter voltage VBE.
  • the resonance frequency changing circuit 21 does not react to a temporary voltage drop, but can return the resonance frequency to the initial value after the received voltage is sufficiently lowered by switching the resonance frequency.
  • the FETs 44 and 45 can be reliably secured until the resonance frequency adjustment effect is obtained when a voltage exceeding the breakdown voltage of the Zener diode ZDs is applied. Can be driven.
  • the resonance frequency changing circuit 21 when the voltage converted into direct current by the rectifier circuit 22 exceeds a predetermined threshold value, the resonance frequency changing circuit 21 operates and the resonance frequency is switched. When the resonance frequency is switched, the received voltage decreases. When the resonance frequency falls below the threshold value, the resonance frequency changing circuit 21 stops operating, the resonance frequency returns to the original value, and the received voltage increases.
  • the power receiving voltage is controlled based on the rectified DC voltage on the power receiving device 7 side, elements and the like caused by a time lag which is a concern in the case of Patent Document 1 The problem of destruction does not occur.
  • the voltage detection circuit 23 drives the resonance frequency changing circuit 21 in a pulse manner by repeating the above-described resonance frequency switching operation (that is, load changing operation).
  • This pulse period depends on the received voltage. The higher the received voltage, the shorter the pulse period, and the lower the received voltage, the longer the pulse period. That is, the pulse signal generated by the voltage detection circuit 23 and the resonance frequency changing circuit 21 can be used as a pulse width modulation signal corresponding to the received voltage.
  • This pulse width modulation signal is superimposed on a carrier wave as a load modulation signal (feedback signal) by turning on and off the resonance frequency changing circuit 21 and transmitted to the power transmission device 4 (see FIG. 5A).
  • the detection circuit 14 detects this modulation signal (see FIG. 5B) and transmits it to the power transmission control circuit 11. Thereby, the power transmission control circuit 11 can control the driver circuit 12 based on the modulation signal transmitted from the detection circuit 14, and can perform more efficient power transmission, that is, less wasteful power transmission.
  • the non-contact power transmission system 2 As shown in FIG. 6, the non-contact power transmission system 2 according to the second embodiment of the present invention includes a power transmission device 5 and a power reception device 8.
  • a power transmission device 5 As shown in FIG. 6, the non-contact power transmission system 2 according to the second embodiment of the present invention includes a power transmission device 5 and a power reception device 8.
  • the power transmission device 5 includes a power transmission antenna 10 that transmits power, a driver circuit 12 that drives the power transmission antenna 10, a power transmission control circuit 11 that controls the driver circuit 12 to perform power transmission control, and a power transmission antenna 10 and a driver circuit 12.
  • a current monitor circuit 80 that monitors the current input to the driver circuit 12 is provided.
  • the current monitor circuit 80 includes a resistor, a current transformer, an amplifier circuit, and the like, and outputs a voltage corresponding to the current input to the driver circuit 12.
  • FIG. 7 schematically shows a specific example of the driver circuit 12 and the current monitor circuit 80.
  • the driver circuit 12 includes a resistor 81 connected to the power supply line Vp, a choke coil 82 connected to the resistor 81, and a drive FET 83 connected to the choke coil 82 and controlled by the power transmission control circuit 11. .
  • the current monitor circuit 80 detects a change in the current input to the driver circuit 12 from the voltage drop across the resistor 81 as a modulation signal and transmits it to the power transmission control circuit 11.
  • the resonance frequency changing circuit 21 operates to switch the resonance frequency.
  • the current input to the driver circuit 12 of the power transmission device 5 varies in conjunction with the operation of the resonance frequency changing circuit 21.
  • the power transmission control circuit 11 receives the fluctuation of the current from the current monitor circuit 80 as a modulation signal (feedback signal), thereby monitoring the presence / absence of the operation of the resonance frequency changing circuit 21 and the operation of the resonance frequency changing circuit 21. Power transmission control based on this can be performed. Moreover, transmission voltage control can be realized with a simple configuration.
  • the non-contact power transmission system 3 As shown in FIG. 8, the non-contact power transmission system 3 according to the third embodiment of the present invention includes a power transmission device 6 and a power reception device 9.
  • a power transmission device 6 As shown in FIG. 8, the non-contact power transmission system 3 according to the third embodiment of the present invention includes a power transmission device 6 and a power reception device 9.
  • differences from the first embodiment will be described.
  • the power transmission device 6 includes a power transmission antenna 10 that transmits power, a driver circuit 12 that drives the power transmission antenna 10, a power transmission control circuit 11 that controls the driver circuit 12 to perform power transmission control, and a power transmission antenna 10 and a driver circuit 12.
  • a detection circuit 14 for detecting the modulation signal, and a first band-pass filter 72a and a second band-pass filter 72b connected to the output of the detection circuit 14 are provided. ing.
  • the input of the detection circuit 14 is connected to the power transmission antenna 10.
  • the first band pass filter 72a and the second band pass filter 72b have different frequency characteristics.
  • the first band-pass filter 72a corresponds to the frequency band (first frequency band) of the modulation signal superimposed on the carrier wave by the power receiving device 9, and the second band-pass filter 72b has the load modulation circuit 74 superimposed on the carrier wave. Is adjusted so as to correspond to the frequency band (second frequency band) of the additional modulation signal (described later).
  • the power receiving device 9 rectifies the AC power received by the power receiving antenna 20, the power receiving antenna 20 that receives the AC power from the power transmitting device 4, the resonance frequency changing circuit 21 that changes the resonance frequency of the power receiving antenna 20, and the power receiving antenna 20.
  • Secondary power reception control including a load modulation circuit 74 that superimposes an additional modulation signal on a carrier wave, in addition to the rectification circuit 22 that converts to DC power and the voltage detection circuit 23 that detects the output voltage of the rectification circuit 22
  • a power reception control circuit 76 that performs power supply and a power supply circuit 75 that stabilizes the power reception voltage.
  • the power reception control circuit 76 includes a CPU (not shown) and the like, and controls the power reception device 9 and drives the load modulation circuit 74.
  • the load modulation circuit 74 is mainly composed of a capacitor (not shown), an FET, and a resistor, and superimposes an additional modulation signal on the carrier according to the output signal of the power reception control circuit 76.
  • the load modulation circuit 74 can have the same configuration as the resonance frequency changing circuit 21 shown in FIG.
  • the second impedance 42 and the third impedance 43 may be replaced with resistance elements.
  • the modulation signal is transmitted to the carrier wave.
  • the frequency band (first frequency band) of the modulation signal superimposed on the carrier wave by the resonance frequency changing circuit 21 and the frequency band (first frequency band of the additional modulation signal superimposed by the load modulation circuit 74). are designed to be different from each other.
  • the modulation signal A and the additional modulation signal B are transmitted to the power transmission device 6 in a state of being superimposed on the carrier wave. This is processed by the first band-pass filter 72a and the second band-pass filter 72b, respectively, so that the modulation signal A and the additional modulation signal B are detected as independent signal waveforms and transmitted to the power transmission control circuit 11. (See FIG. 9B).
  • the power receiving device 9 superimposes the feedback of the received voltage on the carrier wave as a modulation signal and simultaneously superimposes the ID information of the power receiving device 9 on the carrier wave as an additional modulation signal and sends it to the power transmission device 6.
  • the transmission power can be controlled in a state where 6 recognizes which power receiving device 9 is controlling based on the ID information or the like.
  • one bandpass filter whose frequency characteristics can be switched as shown in FIG.
  • the modulation signal and the additional modulation signal may be received by switching the frequency characteristics of the band pass filter 72c using the 72c.
  • the present invention can be applied to a non-contact power transmission system for charging a secondary battery mounted on a portable electronic device such as a mobile phone, an electric razor, or a digital camera.
  • the present invention relates to Japanese Patent Application No. 2011-207736 filed with the Japan Patent Office on September 22, 2011 and Japanese Patent Application No. 2012-093769 filed with the Japan Patent Office on April 17, 2012. The contents of which are incorporated herein by reference.

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Power Engineering (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

La présente invention concerne un système d'émission d'énergie sans contact (1) qui comprend un dispositif d'émission d'énergie (4) et un dispositif de réception d'énergie (7). Le dispositif d'émission d'énergie (4) émet un courant alternatif modulé sur une porteuse vers le dispositif de réception d'énergie. Le dispositif de réception d'énergie (7) modifie la fréquence de résonance d'une antenne réceptrice d'énergie (20) par la modification de la charge du dispositif de réception d'énergie (7) afin de commander la réception du courant alternatif. Le dispositif d'émission d'énergie (4) détecte, en réponse à la modification de la charge du dispositif de réception d'énergie (7), un signal modulé qui est superposé à la porteuse du courant alternatif, et commande l'émission du courant alternatif sur la base du signal modulé détecté.
PCT/JP2012/073069 2011-09-22 2012-09-10 Dispositif d'émission d'énergie, dispositif de réception d'énergie, système d'émission d'énergie sans contact et procédé permettant de commander l'énergie d'émission dans un tel système WO2013042570A1 (fr)

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