WO2013041140A1 - Procédé et appareil permettant de découper des pièces à semi-conducteurs - Google Patents

Procédé et appareil permettant de découper des pièces à semi-conducteurs Download PDF

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Publication number
WO2013041140A1
WO2013041140A1 PCT/EP2011/066499 EP2011066499W WO2013041140A1 WO 2013041140 A1 WO2013041140 A1 WO 2013041140A1 EP 2011066499 W EP2011066499 W EP 2011066499W WO 2013041140 A1 WO2013041140 A1 WO 2013041140A1
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WO
WIPO (PCT)
Prior art keywords
wire
micrometers
pulley
cutting
semiconductor workpiece
Prior art date
Application number
PCT/EP2011/066499
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English (en)
Inventor
Mathijs Van Der Meer
Mathieu BILLOD
Yvan BRASEY
Original Assignee
APPLIED MATERIALS SWITZERLAND SàRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by APPLIED MATERIALS SWITZERLAND SàRL filed Critical APPLIED MATERIALS SWITZERLAND SàRL
Priority to PCT/EP2011/066499 priority Critical patent/WO2013041140A1/fr
Priority to CN201220511767.7U priority patent/CN203266962U/zh
Priority to CN2012103765186A priority patent/CN103286863A/zh
Publication of WO2013041140A1 publication Critical patent/WO2013041140A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades

Definitions

  • Embodiments of the present invention relates to a wire saw and a method of cutting a semiconductor workpiece with a wire saw.
  • Wire saws are used in the semiconductor industry to cut semiconductor workpieces into shapes amenable for further processing, for example silicon is cut using wire saws for cropping, squaring, and wafering. Wire saws are also used for cutting other materials. Different types of wire may be used in wire saws, for example those used in combination with silicon carbide particles in a slurry, and diamond wire often used in combination with a coolant. Generally, the hard material such as silicon carbide or diamond abrade the semiconductor workpiece to make the cut.
  • US patent 2860862 describes a method of wire sawing granite and, in particular, to a method of sawing relatively large granite slabs.
  • US patent 6881131 describes a method and apparatus for diamond wire cutting of metal structures, a wire operated under a tension of 150 to 200 pounds, and 10 and 11 millimeter diameter diamond wires.
  • wire saw devices for sawing bricks, wafers, and the like from a semiconductor workpiece use a tension of no more than about 35 N or sometimes no more than about 80 N.
  • Wire saws from other fields like metal sawing and sawing of stone or granite do not provide the desired accuracy, which results in a different device configuration.
  • the desire to increase the cutting speed can, thereby, result in a so called belly-effect such that the pieces to be sawed do not have the desired geometry.
  • a so called belly-effect such that the pieces to be sawed do not have the desired geometry.
  • Particularly for solar applications and the demand to increase productivity for manufacturing facilities thereof there is a strong desire to increase the cutting speed.
  • a method of cutting a semiconductor workpiece with a wire saw including applying a tension of at least 150 newtons to a wire; moving the wire substantially along its length; and contacting the wire to the semiconductor workpiece for cutting of the semiconductor workpiece; cutting the semiconductor workpiece; wherein the diameter of the wire is 1.5 millimeters or less.
  • a wire saw including a spool shaft, at least one pulley, a wire management system, and a tensioner, wherein the tensioner is configured for providing a wire tension of 150 N or above.
  • Fig. 1 shows a wire saw device for cropping semiconductor workpieces, according to embodiments described herein;
  • Fig. 2 shows a wire management system of a wire saw, according to embodiments described herein;
  • FIG. 3 shows a cutting head of a wire saw, according to embodiments described herein;
  • Fig. 4 shows a flow chart describing a method of cutting a semiconductor workpiece with a wire saw, according to embodiments described herein;
  • Fig. 5 shows a flow chart describing a method of cutting a semiconductor workpiece with a wire saw, according to embodiments described herein.
  • an embodiment of a wire saw device in this example a simplified cropper, comprises a spool 12 of wire 10.
  • the wire 10 is guided to a first pulley 20 followed by a second pulley 30.
  • the wire moves substantially along its length along a cutting direction.
  • the wire motion can alternatively be in a reciprocating manner, in which the motion of the wire along its length is periodically reversed direction.
  • the wire or an edge of the wire is contacted to a semiconductor workpiece 50 to cut the workpiece. Alternatively or additionally, the semiconductor workpiece is contacted to the wire to cut the workpiece.
  • the wire or wires forming a wire web can be moved relative to the workpiece, the workpiece can be moved relative to the wire or wire web, or the wire and the workpiece can both be moved relative to each other. Movement of the workpiece is performed by a movable workpiece support plate or workpiece supply plate 60.
  • the wire, the workpiece supply plate, and both the wire and workpiece supply plate can be movable.
  • structured wire is a crimped wire, wherein, for example, saw wire being made of a metallic wire of a diameter d and being provided with a plurality of crimps, wherein said crimps are arranged in at least two different planes, such that, when measured, between measuring rods of a micrometer, over a length comprising crimps in at least two different planes, a circumscribed enveloping diameter D of said crimped saw wire is between 1.05 and 1.50 times said diameter d.
  • Diamond wire is a wire with a coating, wherein diamond particles are embedded in the coating.
  • the wire diameters referred to herein describe the core diameter, i.e. the diameter of the core without coating and/or embedded particles or the diameter of the saw wire irrespective of the crimps, i.e. the envelope.
  • Embodiments of the present invention refer to cutting of semiconductor material, where high wire tension has not been utilized before, and refer to wire diameters of 1.5 mm or below. Thereby, the embodiments allow for higher cutting speeds as compared to previous semiconductor cutting processes. Thereby, the embodiments are particularly useful for cutting bricks, i.e. for squaring, or for cropping wire saws.
  • the tension of the wire is high, i.e. greater than 150 newtons.
  • the wire tension is adjusted. It has been found that by using a high tension, the cutting speed may be increased, thereby increasing throughput.
  • the wire thickness is comparatively high, for example 250 micrometers or more. Using wire of a comparatively high wire thickness, or diameter, allows greater tension to be used with a reduced risk of breaking the wire.
  • the wire cutting device is adapted for high tension wire. In an embodiment, which may be combined with other embodiments, the wire cutting device is adapted for high wire thickness, for example a diameter of 250 micrometers or more.
  • a method of cutting mono-silicon at about 3800 micrometer/min table speed using diamond wire and a method of cutting multi- silicon at about 2000 micrometer/min table speed using structured wire or crimped wire as described herein can be provided.
  • a wire management unit is to be understood as a device handling the supply of wire to a working area of a wire saw device, such as a cropper, a squarer, or a wafer-cutting wire saw.
  • the wire saw includes a wire guide for transporting and guiding the wire in a wire moving direction while the wire management unit provides control of the wire tension.
  • the wire provided by the wire management unit forms a wire web.
  • a wire web will be considered as the web formed by a single wire. However, more than one wire, such as two three or four wires can be used for forming the wire web. Further, a wire web may contain more than one working area which is defined as an area in which a sawing process is performed.
  • Fig. 2 shows a portion of a wire management unit in a perspective view, and includes a spool 212 carried by a spool shaft 210.
  • the spool shaft 210 is rotatably mounted to a main frame portion 100.
  • the spool shaft rotation may be driven by a spool motor.
  • the pulleys to be described below are generally freely rotatable.
  • wire 10 is provided toward a working area.
  • the wire is provided towards the working area of the wire saw.
  • a first pulley 220 is shown in Fig. 2.
  • a pulley has a groove adapted for guiding the wire.
  • a pulley generally can have a wire guiding position for guiding one wire in the pulley, i.e., in the pulley groove.
  • the first pulley 220 is adapted for receiving the wire 10 from the spool 212, in particular directly from the spool 212, and for then redirecting the wire.
  • the first pulley is rotatably mounted to a pulley carrying unit 224.
  • the pulley carrying unit 224 is connected to the wire saw device, more specifically to a main frame portion 100 of the wire saw device, so that the pulley carrying unit 224 is longitudinally movable along a pulley motion track.
  • an x-y-z reference frame may be defined as follows: the rotational axis of the spool 212 defines an x axis substantially perpendicular to the page of Fig. 2; the rotational axis of a second pulley 230 is horizontally oriented in Fig. 2, perpendicular to the rotational axis of the spool, and defines the y axis; and the z axis is defined as the axis perpendicular to the x and y axes.
  • the pulley carrying unit 224 is shown as a beam.
  • a third pulley 240 adapted for receiving the wire from the second pulley 230, in particular directly from the second pulley 230, and for redirecting the wire is provided.
  • FIG. 2 An embodiment shown in Fig. 2 also shows a fourth pulley 250 mounted on a mounting member 114.
  • the embodiment of Fig. 2 further includes a wire tensioner for controlling the tension of the wire.
  • the wire tensioner includes a fifth pulley 260 rotatably mounted to the frame and a sixth pulley 270 rotatably mounted to a movable element 274.
  • the movable element 274 is movably mounted on the main frame portion. The movement of the movable element 274 may be controlled by a motor, or the movable element 274 may be pre -biased, e.g., by a spring, for controlling the wire tension.
  • a motor or the movable element 274 may be pre -biased, e.g., by a spring, for controlling the wire tension.
  • the movable element 274 is shown as a pre -biased swivel lever.
  • the wire tensioner receives the wire 10 from the fourth pulley 250 and provides the wire 10 to the working area (to the right of the wire management unit shown in Fig. 2).
  • the wire tensioner includes a motor and/or spring, which are configured to provide forces suitable for tensioning the wire to 150 N or above.
  • the wire tensioner is comparably strong and the respective components like the lever arm and the like are comparably rigid.
  • the above described pulleys are mounted via their axes to the frame such that the position of the pulleys remains essentially constant even when the herein-described higher tension is provided.
  • an additional coating on the wire guiding surfaces of the pulleys is applied.
  • the combination of high tension and diamond particles used as abrasive might result in increased deterioration of the pulley surfaces such that the coating assists in maintaining the desired operational durability.
  • the wire management unit of Fig. 2 also has a secondary wire handling section 300.
  • the secondary wire handling section 300 is constructed similarly to the primary wire handling section 200 and has corresponding elements to the elements of the primary wire handling section 200.
  • the elements of the secondary wire handling section 300 are denoted as “secondary” elements and assigned reference signs 310, 312, etc. corresponding to the corresponding "primary” elements 210, 212, etc. of the primary wire handling section 200.
  • the secondary wire handling unit 300 has, e.g., a secondary spool shaft 310 for a spool 312, a secondary first pulley 320, a secondary second pulley 330, etc.
  • the secondary wire handling section 300 is formed in the same manner as the wire handling section 200 according to any embodiment described herein. The description of elements of the primary wire handling section 200 is therefore also applicable to the corresponding elements of the secondary wire handling section 300.
  • the primary wire handling section provides wire from the primary first spool 212 to the working area.
  • the secondary wire handling section 300 receives the wire 10 from the working area.
  • the wire 10 is transported from the working area to the secondary wire tensioner, more precisely to the secondary sixth pulley 370 and then to the secondary fifth pulley 360, from there to the secondary fourth pulley 350, from there to the secondary third pulley 340, from there to the secondary second pulley 330, from there to the secondary first pulley 320, and from there finally is wound onto the spool 312.
  • a controller controls the motion of the secondary first pulley 320 along the secondary pulley motion track so that the wire is wound in a controlled manner onto the wire carrying area of the secondary spool 312.
  • the wire management section may support reciprocating sawing, wherein cutting is performed by partially or entirely periodically reversing the direction of motion of the wire as it is moved along its length.
  • the wire management section may support bidirectional sawing.
  • bidirectional sawing is understood to be a sawing process during which first the wire is transported from the primary spool to the secondary spool, and thereafter is transported back from the secondary spool to the primary spool, and again from the primary spool to the secondary spool, etc.
  • a controller is adapted for sending actuating commands to the primary spool shaft and to the secondary spool shaft, the actuating commands causing, in a first step, the first spool shaft to unwind wire to the second spool, and causing, in a second step, the second spool shaft to unwind wire to the first spool.
  • a controller is, for example, used for bidirectional sawing and for reciprocating sawing.
  • Fig. 3 shows a schematic top view of a wire saw device 1 being a squarer.
  • the squarer includes a wire management unit with a first wire handling section 200 and a second wire handling section 300. Further, the wire saw device 1 has a working area 400, in which the wire 10 forms a wire web 410 in which the actual sawing process is performed.
  • the wire management unit including the first wire handling section 200 and the second wire handling section 300 may be in accordance with any embodiment described herein, e.g. the embodiment shown in Fig. 2.
  • the wire handling sections 200 and 300 each have a wire spool and a plurality of pulleys for guiding and redirecting the wire 10 towards the wire web 410.
  • a cropper may be provided.
  • the wire saw device 1 further includes pulleys 420, 430 for redirecting the wire from the wire management unit to the wire web.
  • a plurality of work-pulleys 412 are arranged for guiding the wire such that the wire web is created.
  • the above described pulleys 420, 430, 412 and the pulleys of the wire management units 200 and 300 are mounted via their axes to the frame such that the position of the pulleys remains essentially constant even when the herein-described higher tension is provided.
  • an additional coating on the wire guiding surfaces of the pulleys is applied.
  • deterioration of the pulleys to the diamond particles can be reduced.
  • the combination of high tension and diamond particles used as abrasive might result in increased deterioration of the pulley surfaces such that the coating assists in maintaining the desired operational durability.
  • a matrix-like wire web of the squarer is shown with cutting wire sections in two mutually orthogonal directions.
  • the wire web may have, for example, six cutting wire sections in each of the two mutually orthogonal directions.
  • a semiconductor workpiece supply plate is provided (not shown) for carrying the semiconductor workpiece to be sawed.
  • the semiconductor workpiece supply plate can be grooved, so that during sawing the wire can pass through the grooves while the semiconductor workpiece is carried by the remainder of the plate.
  • the working area or wire web is formed by one wire guided from one wire handling section 200 to another wire handling section 300 or vice versa.
  • the elements guiding the high tensioned wire from the spool towards the working area and from the working area towards the other spool are also subject to increasing forces to due to higher tension of 150 N or above.
  • the components connecting the pulley axes to the frame portion of the wire saw device are configured with an increased rigidness to allow for position stability when being utilized under wire tension of 150 N or above.
  • the wire management unit has at least one pulley adapted for high tension wires; and the wire is guided over at least one pulley; alternatively or additionally, at least one pulley has a coating adapted for guiding diamond wire.
  • the wire saw device 1 is adapted to: apply a tension of at least 150 newtons to the wire, move the wire along its length, and contact the wire or an edge of the wire to a semiconductor workpiece for cutting of the semiconductor workpiece.
  • a wire saw device and/or portions thereof such as the wire management system, wire handling portions, especially the pulleys, the wire spool shaft and/ or the wire spool, can be adapted for diamond wire, and methods of operating can be performed with diamond wire.
  • This can, for example, be done by adapting the groove structure of pulleys and guiding elements with an appropriate pitch of grooves, a different depth of grooves and/or a different shape of grooves than for conventional such elements. Further, a coating on the wire guiding surfaces of the pulleys is applied. Thereby, deterioration of the pulleys to the diamond particles can be reduced.
  • the combination of high tension and diamond particles used as abrasive might result in increased deterioration of the pulley surfaces such that the coating assists in maintaining the desired operational durability.
  • the cutting speed can be increased, the energy consumption of the wire saw device can be reduced and, further, as yet another example, the costs of squaring silicon ingots or wafering silicon can be significantly reduced.
  • the diameter of the wire is 1.5 millimeters or less, 1.0 millimeters or less, 800 micrometers or less, or even 600 micrometers or less. In an embodiment, which may be combined with other embodiments, the diameter of the wire is 250 micrometers or more, 350 micrometers or more, or even 450 micrometers or more.
  • the wire is structured wire, diamond wire, structured wire having a diameter larger than 400 micrometers, or diamond wire having a diameter larger than 300 micrometers.
  • the length of the wire is greater than 0.3 kilometers, 1.0 kilometers, 10 kilometers, 40 kilometers, or even greater than 80 kilometers.
  • diamond wire applications might utilize wire length of 0.3 km or greater, wherein applications using structure wire, e.g. crimped wire, utilize wire length of 1 km or greater.
  • the semiconductor workpiece is cut into more than 10, preferably more than 30, pieces; alternatively or additionally it is cut into less than 100, preferably less than 50, pieces; alternatively or additionally, it is cut into at least one brick.
  • the at least one pulley is adapted to deflect the wire less than approximately 0.1 millimeters at a load of approximately 300 newtons or a tension of about 300 newtons.
  • the semiconductor workpiece is cut at a rate, the rate of cutting referring to the rate of the depth of the cut or the table speed, respectively, of: approximately 1500 to 7000 micrometers/minute or 2000 to 6000 micrometers/minute (e.g. approximately 2000 micrometers/min or approximately 3800 micrometers/min).
  • the cutting rate can be about 1500 to 3500 micrometers/minute, whereas for diamond wire the cutting rate can be, for example, about 3000 to 6000 micrometers/minute or even 7000 micrometers/minute.
  • the total length of a cut within a squarer is approximately 4 meters to approximately 10 meters. Cutting rates are sometimes normalized according also to the length of the cut.
  • the semiconductor workpiece is at least one silicon ingot, each being monocrystalline or polycrystalline; for example nine silicon ingots, each with mean diameters of 6 inches or 12 inches.
  • the above cutting rates can be, for example, 7500 to 25000 square millimeters per minute
  • the normalized cutting rate can be about 7500 to 12500 square millimeters per minute
  • the cutting rate can be, for example about 15000 to 25000 square millimeters per minute.
  • the cutting rate can be from 2000 ⁇ / ⁇ to 3500 ⁇ / ⁇ for structure wire, the cutting rate can be up to 3000 ⁇ / ⁇ for structure wire, the cutting rate can be from 3500 ⁇ / ⁇ to 6000 ⁇ / ⁇ for diamond wire, and/or the cutting rate can be 4000 ⁇ / ⁇ and more for diamond wire.
  • the wire is structured wire having a diameter of between approximately 350 micrometers and 700 micrometers (e.g. approximately 400 micrometers), and the semiconductor workpiece is cut at a rate of up to approximately 2000 micrometers/minute, between approximately 2000 and 3000 micrometers/minute, approximately 3000-4000 micrometers/minute, or approximately 4000-5000 micrometers/minute.
  • the wire is diamond wire of between approximately 300 and 500 micrometers, and the semiconductor workpiece is cut at a rate of approximately 2400 micrometers/minute, between approximately 2400 and 3500 micrometers/minute, between approximately 3500 micrometers/minute and 4500 micrometers/minute, or between approximately 4500 micrometers/minute and 5500 micrometers/minute.
  • a semiconductor workpiece is cut at a rate of approximately 2400 micrometers/minute, the semiconductor workpiece is multi- silicon, and the wire is diamond wire having a diameter larger than 300 micrometers, e.g. 350 ⁇ .
  • Fig. 4 shows a flow chart describing a method of cutting a semiconductor workpiece with a wire saw, according to embodiments described herein: High tension, i.e. tension of about 150 N or above, is applied to the wire and the workpiece is cut with the wire. As shown in more detail in Fig.
  • a wire is guided over at least one pulley; a tension is applied to the wire, wherein the tension is 150 N or above; the wire is moved substantially along its length; the wire or an edge of the wire, by the relative motion of the wire and the workpiece supply plate or workpiece support plate, is contacted to a semiconductor workpiece; and the workpiece is cut.
  • the method of cutting a semiconductor workpiece comprises applying a high tension to the wire, as illustrated in Fig. 5.
  • the method of cutting a semiconductor workpiece comprises moving the wire substantially along its length.
  • moving the wire substantially along its length comprises periodically reversing its direction.
  • the productivity of e.g. squaring can be increased by at least 50% by using high tension structured wire or high tension diamond wire, wherein the tension can be at least 150 N.
  • the tension can be at least 150 N.
  • the total costs of ownership can be significantly reduced.
  • embodiments might result in an increased kerf loss and an optimized parameter window with respect to cutting speed and kerf loss needs to be found, further considering the required cutting accuracy and the resulting apparatus design.
  • embodiments allows to operate at higher cutting speeds (e.g. 1800 um/rnin or above).
  • An advantage of using high tension is that more pressure can be applied to the semiconductor workpiece.
  • a further advantage of using high tension is that the cutting rate is increased.
  • a further advantage of using high tension is that less bow is induced in the cut semiconductor workpiece.
  • An advantage of using wire of high diameter is that high tension can be used.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un procédé permettant de découper une pièce à semi-conducteurs au moyen d'une machine à scier à fil. Le procédé comprend l'étape consistant à appliquer une tension d'au moins 150 newtons sur un fil (10) ; l'étape consistant à déplacer le fil (10) sensiblement sur toute sa longueur ; et l'étape consistant à mettre le fil en contact avec la pièce à semi-conducteurs (50) pour découper la pièce à semi-conducteurs ; l'étape consistant à découper la pièce à semi-conducteurs (50) ; le diamètre du fil (10) étant de 1,5 millimètres ou moins.
PCT/EP2011/066499 2011-09-22 2011-09-22 Procédé et appareil permettant de découper des pièces à semi-conducteurs WO2013041140A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/EP2011/066499 WO2013041140A1 (fr) 2011-09-22 2011-09-22 Procédé et appareil permettant de découper des pièces à semi-conducteurs
CN201220511767.7U CN203266962U (zh) 2011-09-22 2012-09-24 用于切割半导体工件的线锯
CN2012103765186A CN103286863A (zh) 2011-09-22 2012-09-24 用于切割半导体工件的方法及设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2011/066499 WO2013041140A1 (fr) 2011-09-22 2011-09-22 Procédé et appareil permettant de découper des pièces à semi-conducteurs

Publications (1)

Publication Number Publication Date
WO2013041140A1 true WO2013041140A1 (fr) 2013-03-28

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CN (2) CN203266962U (fr)
WO (1) WO2013041140A1 (fr)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
DE102013219468A1 (de) 2013-09-26 2015-03-26 Siltronic Ag Verfahren zum gleichzeitigen Trennen einer Vielzahl von Scheiben von einem Werkstück

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Publication number Priority date Publication date Assignee Title
WO2013041140A1 (fr) * 2011-09-22 2013-03-28 APPLIED MATERIALS SWITZERLAND SàRL Procédé et appareil permettant de découper des pièces à semi-conducteurs
DE102014208187B4 (de) * 2014-04-30 2023-07-06 Siltronic Ag Verfahren zum gleichzeitigen Trennen einer Vielzahl von Scheiben mit besonders gleichmäßiger Dicke von einem Werkstück
CN107364021A (zh) * 2017-06-27 2017-11-21 云南蓝晶科技有限公司 晶棒线切割机

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US4755340A (en) * 1984-12-20 1988-07-05 Heliotronic Forschungs- Und Entwicklungsgesellschaft Fur Solarzellen Gmbh Method for producing packs of blades used for cutting crystal bars into wafers
US6881131B2 (en) 2001-05-03 2005-04-19 The Trustees Of Princeton University Method and apparatus for diamond wire cutting of metal structures
US20060249135A1 (en) * 2005-01-07 2006-11-09 Sumitomo Electric Industries, Ltd. Method of producing iii-nitride substrate
EP2075106A1 (fr) * 2006-10-20 2009-07-01 Mitsubishi Electric Corporation Suspension épaisse pour découpe de lingot de silicium et procédé de découpe de lingots de silicium avec celle-ci

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WO2013041140A1 (fr) * 2011-09-22 2013-03-28 APPLIED MATERIALS SWITZERLAND SàRL Procédé et appareil permettant de découper des pièces à semi-conducteurs

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Publication number Priority date Publication date Assignee Title
US2860862A (en) 1957-04-12 1958-11-18 Fletcher Co H E Methods and apparatus for wire sawing
US4755340A (en) * 1984-12-20 1988-07-05 Heliotronic Forschungs- Und Entwicklungsgesellschaft Fur Solarzellen Gmbh Method for producing packs of blades used for cutting crystal bars into wafers
US6881131B2 (en) 2001-05-03 2005-04-19 The Trustees Of Princeton University Method and apparatus for diamond wire cutting of metal structures
US20060249135A1 (en) * 2005-01-07 2006-11-09 Sumitomo Electric Industries, Ltd. Method of producing iii-nitride substrate
EP2075106A1 (fr) * 2006-10-20 2009-07-01 Mitsubishi Electric Corporation Suspension épaisse pour découpe de lingot de silicium et procédé de découpe de lingots de silicium avec celle-ci

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013219468A1 (de) 2013-09-26 2015-03-26 Siltronic Ag Verfahren zum gleichzeitigen Trennen einer Vielzahl von Scheiben von einem Werkstück
DE102013219468B4 (de) * 2013-09-26 2015-04-23 Siltronic Ag Verfahren zum gleichzeitigen Trennen einer Vielzahl von Scheiben von einem Werkstück
US9333673B2 (en) 2013-09-26 2016-05-10 Siltronic Ag Method for simultaneously cutting a multiplicity of wafers from a workpiece

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CN103286863A (zh) 2013-09-11

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