WO2013019041A9 - Procédé de fabrication de film mince d'électrolyte solide et dispositif de fabrication associé - Google Patents

Procédé de fabrication de film mince d'électrolyte solide et dispositif de fabrication associé Download PDF

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Publication number
WO2013019041A9
WO2013019041A9 PCT/KR2012/006044 KR2012006044W WO2013019041A9 WO 2013019041 A9 WO2013019041 A9 WO 2013019041A9 KR 2012006044 W KR2012006044 W KR 2012006044W WO 2013019041 A9 WO2013019041 A9 WO 2013019041A9
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thin film
solid electrolyte
precursor gas
electrolyte thin
film manufacturing
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PCT/KR2012/006044
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English (en)
Korean (ko)
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WO2013019041A2 (fr
WO2013019041A3 (fr
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박호영
진상완
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지에스칼텍스(주)
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Publication of WO2013019041A2 publication Critical patent/WO2013019041A2/fr
Publication of WO2013019041A9 publication Critical patent/WO2013019041A9/fr
Publication of WO2013019041A3 publication Critical patent/WO2013019041A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
    • H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
    • H01M10/0562—Solid materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/058—Construction or manufacture
    • H01M10/0585—Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2300/00—Electrolytes
    • H01M2300/0017—Non-aqueous electrolytes
    • H01M2300/002—Inorganic electrolyte
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2300/00—Electrolytes
    • H01M2300/0017—Non-aqueous electrolytes
    • H01M2300/0065—Solid electrolytes
    • H01M2300/0068—Solid electrolytes inorganic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method and apparatus for manufacturing a solid electrolyte thin film.
  • the organic metal chemical vapor deposition method improves the film formation speed, significantly reduces the damage of the thin film, and conformal deposition.
  • the present invention relates to a solid electrolyte thin film manufacturing method and apparatus that can be usefully used.
  • Small batteries are the key components to enable widespread use of ultra-small electronic devices.
  • lithium secondary batteries have high energy density per weight and volume, and are commercially available while rapidly replacing existing Ni-MH and Ni-Cd batteries. It is adopted as a power source for most portable electronic devices.
  • lithium secondary batteries are bulk batteries composed of two electrodes made of an active material in a powder form and a liquid electrolyte, and are not suitable for microelectronic devices because they are manufactured in the form of independent battery packs.
  • various additives and liquid electrolytes reduce the capacity of the battery, reduce the charge and discharge life, and act as a factor causing environmental problems.
  • a solid-state thin-film lithium secondary micro battery (hereinafter, referred to as 'thin film battery') manufactured by forming a thin film using a thin film deposition process such as sputtering and thermal evaporation of battery components of the negative electrode, the positive electrode, and the electrolyte is studied.
  • a thin film deposition process such as sputtering and thermal evaporation of battery components of the negative electrode, the positive electrode, and the electrolyte
  • the thin film battery is composed of a positive electrode, a solid electrolyte, and a negative electrode, and is manufactured by sequentially forming all of the battery components of the solid phase.
  • solid electrolytes have to satisfy all of characteristics such as high ion conductivity, electrochemically stable potential window, and low electric conductivity, and thus, active researches are being made.
  • a solid electrolyte for thin film batteries that is currently attracting the most attention is LiPON published by Bates et al. (US Pat. No. 5,338,625: John B. Bates et al., Thin film battery and method for making same).
  • the U.S. Patent No. 5,338,625 discloses that LiPON solid electrolyte is formed by high frequency sputtering of a Li 3 PO 4 target in a nitrogen atmosphere, and the LiPON solid electrolyte is 2 ( ⁇ 1) ⁇ 10 ⁇ 6 S / cm at room temperature. It has been reported to have high ionic conductivity and, in particular, to form a very stable interface with a positive electrode or a negative electrode, thereby satisfying most of the conditions that a solid electrolyte for a thin film battery should have since the cell deteriorates very little during operation.
  • the film formation rate is slower (about 20 nm / min) under the nitrogen atmosphere used as the reaction gas during sputtering, it takes a very long time to reach the target thickness of 2 ⁇ m, thus producing a new thin film that can improve the efficiency of the process.
  • the film formation rate is slower (about 20 nm / min) under the nitrogen atmosphere used as the reaction gas during sputtering, it takes a very long time to reach the target thickness of 2 ⁇ m, thus producing a new thin film that can improve the efficiency of the process.
  • the film formation rate is slower (about 20 nm / min) under the nitrogen atmosphere used as the reaction gas during sputtering, it takes a very long time to reach the target thickness of 2 ⁇ m, thus producing a new thin film that can improve the efficiency of the process.
  • the present invention provides a method for manufacturing a solid electrolyte thin film which can be applied to a thin film battery having a trench structure by improving the deposition rate, minimizing damage to the substrate and the underlying film, and conformal deposition by the organometallic chemical vapor deposition method.
  • the solid electrolyte thin film manufacturing apparatus for achieving the above object is a reaction unit having a reaction space that accommodates the substrate; A first supply unit supplying a lithium precursor gas gas to the reaction space; A second supply unit supplying phosphorus or boron precursor gas gas to the reaction space; A third supply unit supplying a nitrogen precursor gas gas to the reaction space; An energy generator for imparting energy for decomposing the precursor gases; And it characterized in that it comprises a heating unit for heating the substrate.
  • the method and apparatus for manufacturing a solid electrolyte thin film of the present invention not only the film formation speed is greatly improved, but the speed can be freely adjusted, and the damage of the substrate and the underlying film is reduced.
  • the present invention can be applied to a thin film battery having a trench structure having a large surface area.
  • FIG. 1 is a schematic diagram of a manufacturing method according to an embodiment of the present invention.
  • FIG. 2 is a schematic view of a manufacturing apparatus according to an embodiment of the present invention.
  • 3 is a graph showing the deposition rate of the LiPON thin film according to the substrate heating temperature according to an embodiment of the present invention.
  • FIG. 5 is an SEM photograph of a LiPON thin film prepared according to an embodiment of the present invention.
  • Solid electrolyte thin film manufacturing method inserting the substrate in the reaction space as shown in Figure 1 (S110); Imparting energy and heating the reaction space (S120); Injecting a lithium precursor gas, a phosphorus or boron precursor gas, and a nitrogen precursor gas into the reaction space (S130); And forming a solid electrolyte thin film on the substrate by reacting the precursor gases with each other (S140).
  • the substrate is inserted into the reaction space (S110).
  • the reaction space refers to a space in which metal organic chemical vapor deposition (MOCVD) is performed, and includes a space in which a substrate to be deposited is deposited.
  • MOCVD metal organic chemical vapor deposition
  • the substrate is not limited as long as it can be used in a thin film battery, and a plurality of substrates may be inserted to increase process efficiency.
  • each precursor gas may be decomposed, reacted, and deposited on the substrate.
  • the means for imparting the energy is not particularly limited, but heat, a catalyst, and light are preferably used.
  • a high frequency coil may be wound around the reaction space or a lamp heater may be mounted.
  • each precursor gas is decomposed by heat, and reacts to be deposited on the substrate.
  • each precursor gas may be allowed to pass through a tungsten wire.
  • the tungsten wire serves as a catalyst, the reaction temperature is preferably about 1800 ⁇ 2000 °C.
  • Each precursor gas that has passed through the high temperature tungsten wire can be decomposed and reacted with each other to be deposited on the substrate.
  • a laser or UV may be irradiated to a reaction region adjacent to the substrate to be deposited.
  • the precursor gases are decomposed by the light energy and react with each other to be deposited on the substrate. It is preferable to adjust irradiation intensity and time suitably according to film-forming speed, internal conditions of reaction space, etc.
  • the substrate may be heated to facilitate deposition, and the heating temperature may be appropriately adjusted according to the type of substrate and the deposition rate.
  • lithium precursor gas, phosphorus or boron precursor gas, and nitrogen precursor gas are injected into the reaction space (S130).
  • LiPON or LiBON which is especially excellent in ion conductivity.
  • precursor gases of lithium, phosphorus, boron or nitrogen must be injected into the reactants.
  • the lithium precursor gas is not limited as long as it can be applied to the organometallic chemical vapor deposition method of the present invention, but in particular Li (C 11 H 19 O 2 ) (Lithium dipivaloylmethanate, also referred to as Li (DPM)) is preferred.
  • the Li (C 11 H 19 O 2 ) is a solid state at room temperature, giving a temperature of about 160 ⁇ 250 °C to use a vaporized one.
  • the phosphorus precursor gas is not limited as long as it can be applied to the organometallic chemical vapor deposition method of the present invention, in particular, PO (OCH 3 ) 3 (trimethyl phosphate) or PO (OC 2 H 5 ) 3 (triethyl phosphate) is preferred Do.
  • the boron precursor gas is not limited as long as it can be applied to the organometallic chemical vapor deposition of the present invention, in particular, it is preferable that it is B (OCH 3 ) 3 (boron trimethoxide) or B (OC 2 H 5 ) 3 (boron triethoxide). Do.
  • the PO (OCH 3 ) 3 , PO (OC 2 H 5 ) 3 , B (OCH 3 ) 3 , B (OC 2 H 5 ) 3 is a liquid at room temperature, giving a temperature of about 30 to 100 ° C. Use the old one.
  • the nitrogen precursor gas is not limited as long as it can be applied to the organometallic chemical vapor deposition of the present invention, it is particularly preferable that the NH 3 gas.
  • the energy applying means for N 2 decomposition is not limited to plasma, and there is no need to use hydrogen separately for efficient removal of organic matter such as carbon. There is this.
  • the reaction space is preferably in a vacuum state.
  • reaction formula When reacting the precursor gases in the reaction space, the reaction formula is as follows.
  • LiPON or LiBON solid electrolyte is deposited on the substrate to form a thin film.
  • the process is repeated until a solid electrolyte thin film of a desired thickness is formed.
  • Solid electrolyte thin film manufacturing apparatus comprises a reaction unit 100 having a reaction space in which the substrate is accommodated; A first supply unit 210 supplying a lithium precursor gas to the reaction space; A second supply unit 220 supplying phosphorus or boron precursor gas to the reaction space; A third supply unit 230 supplying a nitrogen precursor gas to the reaction space; An energy generator 300 for imparting energy for decomposing the precursor gases; And it characterized in that it comprises a heating unit 400 for heating the substrate.
  • the reaction unit 100 provides a space in which the organometallic chemical vapor deposition process of the present invention is performed.
  • the susceptor 110 on which the deposition target substrate S is mounted may be provided in the reaction part 100.
  • a plurality of substrates S may be mounted on the susceptor 110.
  • the plurality of substrates S may be seated along the edge of the circular susceptor 110.
  • the susceptor 110 may be integrally formed with the susceptor support 115 supporting the susceptor 110.
  • the susceptor support 115 may be designed to be movable or rotating movement. Accordingly, the substrate S mounted on the susceptor may be moved or rotated to increase the deposition efficiency.
  • the first supply unit 210 supplies the lithium precursor gas injected toward the substrate S seated on the susceptor 110 in the reaction unit 100.
  • the lithium precursor gas is not limited as long as it can be applied to the organometallic chemical vapor deposition method of the present invention, as described in the preparation method, in particular Li (C 11 H 19 O 2 ) (lithium dipivaloylmethanate, Li (DPM) Also referred to as).
  • a bubbler may be installed in the first supply part to inject Li (C 11 H 19 O 2 ), which is solid at room temperature, into the reaction space.
  • the temperature of the bubbler is preferably set in the range of 160 ⁇ 250 °C so that the lithium precursor Li (C 11 H 19 O 2 ) is sufficient to vaporize.
  • the carrier gas used to inject Li (C 11 H 19 O 2 ) into the reaction space is an inert gas, and argon is preferable.
  • the second supply unit 220 supplies the phosphorus or boron precursor gas injected toward the substrate S seated on the susceptor 110 in the reaction unit 100.
  • the phosphorus precursor gas is not limited as long as it can be applied to the organometallic chemical vapor deposition method of the present invention, as described in the preparation method, in particular PO (OCH 3 ) 3 (trimethyl phosphate) or PO (OC 2 H 5 ) 3 (triethyl phosphate) is preferred.
  • the boron precursor gas is not limited as long as it can be applied to the organometallic chemical vapor deposition of the present invention, as described in the preparation method, in particular B (OCH 3 ) 3 (boron trimethoxide) or B (OC 2 H 5 ) 3 (boron triethoxide) is preferred.
  • PO (OCH 3 ) 3 , PO (OC 2 H 5 ) 3 , B (OCH 3 ) 3 , and B (OC 2 H 5 ) 3 which are liquid at room temperature, may be injected into the reaction space.
  • the supply unit may be a bubbler.
  • the temperature of the bubbler is 30 ⁇ 100 °C so that the phosphorus or boron precursor PO (OCH 3 ) 3 , PO (OC 2 H 5 ) 3 , B (OCH 3 ) 3 , B (OC 2 H 5 ) 3 is sufficient to vaporize It is preferable to set in the range of.
  • the carrier gas used when injected into the reaction space is an inert gas, and argon is preferable.
  • the third supply unit 230 supplies a nitrogen precursor gas injected toward the substrate S seated on the susceptor 110 in the reaction unit 100.
  • the nitrogen precursor gas is not limited as long as it can be applied to the organometallic chemical vapor deposition of the present invention, as described in the preparation method, but is preferably NH 3 gas. In general, since the N 2 gas used in the sputtering method is not used, the deposition rate can be increased.
  • Each precursor gas supplied by the first supply unit 210, the second supply unit 220, and the third supply unit 230 reacts with each other in the reaction unit 100, as described in the manufacturing method.
  • the solid electrolyte thin film is formed on the substrate S.
  • the energy generator 300 may be reactive by applying energy to each precursor gas supplied from the first supply unit 210, the second supply unit 220, and the third supply unit 230.
  • the energy generating unit 300 shown in FIG. 2 is schematically illustrated for the purpose of clearly showing that the present invention is a configuration of the present invention, and can be installed by adjusting the position in an appropriate form according to the following energy imparting means.
  • the means for applying energy to the precursor gas is not particularly limited, but heat, a catalyst, and light are preferably used.
  • the energy generator 300 may include a high frequency coil or a lamp heater.
  • the energy generator 300 may include a tungsten wire.
  • the energy generator 300 may include a laser or UV irradiation.
  • the heating unit 400 functions to heat the substrate S to facilitate deposition.
  • the heating unit 400 may be installed inside or outside the susceptor 110 on which the substrate S is seated.
  • the heating temperature can be appropriately adjusted according to the type of substrate, the film formation rate, the conditions inside the reaction space and the like.
  • a valve for controlling the injection amount of each precursor gas may be used for organometallic chemical vapor deposition. Since it will be obvious to those skilled in the art, the description thereof will be omitted.
  • the film formation speed is greatly improved, and the damage degree to the substrate and the underlying film is remarkably reduced, so that a highly reliable thin film battery can be efficiently produced.
  • the present invention can be applied to fabrication of a thin film battery having a trench structure.
  • Li (DPM) lithium dipivaloylmethanate
  • TEP triethyl phosphate
  • NH 3 a nitrogen precursor gas
  • the deposition rate of the LiPON thin film according to the substrate heating temperature is shown in the graph of FIG. 3.
  • the heating temperature of the substrate should be at least 500 ° C or higher.
  • FIG. 4 is an XRD graph of a LiPON thin film manufactured according to an embodiment of the present invention
  • FIG. 5 is a SEM photograph of a LiPON thin film manufactured according to an embodiment of the present invention.
  • the LiPON thin film prepared according to the embodiment of the present invention was confirmed to be an amorphous amorphous structure.
  • the FTIR spectrum was analyzed to confirm the bonding structure of the LiPON thin film according to the heating temperature of the substrate.
  • 6 is an FTIR spectrum of LiPON prepared according to an embodiment of the present invention.
  • the peak generated near the wavelength of 1180cm -1 appears to be due to the adduct.
  • the heating temperature of the substrate is set to 550 ° C or higher, no peak was observed. Therefore, when increasing the reaction temperature to 550 °C or more, it was determined that the LiPON thin film is more preferably formed.
  • the peaks (a) to (f) identified in FIG. 7 are Li, (b), (c) is P, (e) is N, and (f) is the presence of O elements.
  • the thin film prepared according to the embodiment of the present invention was LiPON.
  • peak means a single bond structure of NP3
  • peak means a double bond and a single bond structure of NP2, TEP, NH 3 used in the present invention successfully reacted As a result, it was confirmed that nitrogen was bound to phosphorus, and it was also confirmed that it could function as a solid electrolyte by exhibiting ionic conductivity.

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  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Secondary Cells (AREA)

Abstract

La présente invention concerne un procédé de fabrication de film mince d'électrolyte solide ainsi qu'un dispositif de fabrication associé, qui offre un rythme de formation de film amélioré, qui réduit de manière remarquable les dommages sur un film mince, qui permet un dépôt conforme en utilisant un procédé de dépôt chimique en phase vapeur organique, et qui peut même être utilisé dans une cellule à film mince présentant une structure de tranchée.
PCT/KR2012/006044 2011-07-29 2012-07-27 Procédé de fabrication de film mince d'électrolyte solide et dispositif de fabrication associé WO2013019041A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110075780A KR20130013876A (ko) 2011-07-29 2011-07-29 고체전해질 박막 제조방법 및 제조장치
KR10-2011-0075780 2011-07-29

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WO2013019041A2 WO2013019041A2 (fr) 2013-02-07
WO2013019041A9 true WO2013019041A9 (fr) 2013-04-04
WO2013019041A3 WO2013019041A3 (fr) 2013-05-23

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KR101788927B1 (ko) 2015-09-17 2017-11-16 한양대학교 에리카산학협력단 다공성 박막의 제조 방법
KR101895290B1 (ko) * 2017-01-23 2018-09-05 영남대학교 산학협력단 금속-유기 화학 기상 증착에 의한 삼차원 고체 배터리용 리튬 포스페이트 박막 전해질의 균일한 증착 방법 및 장치

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US6886240B2 (en) * 2003-07-11 2005-05-03 Excellatron Solid State, Llc Apparatus for producing thin-film electrolyte
KR20110009295A (ko) * 2009-07-22 2011-01-28 지에스나노텍 주식회사 전고체 리튬이차전지용 벌크 ＬｉＢＯＮ고체전해질의 제조방법

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